A magnetron sputtering cathode

Abstract

The present invention discloses a magnetron sputtering cathode. The magnetron sputtering cathode comprises: a target material, a cooling system, a magnet frame, a magnet, a magnetic conductive plate and a base. A plurality of grids are arranged in the cooling system of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into a plurality of branch channels by the grids. The coolant flowing in from the inlet is respectively branched to each branch channel, and finally converges to the outlet to flow out. Since the coolant flows in the branch channel in the form of laminar flow, and the grid with high thermal conductivity increases the heat exchange area and heat exchange efficiency, the thermal cycle efficiency of the magnetron sputtering cathode is effectively improved, and rapid and uniform cooling is achieved, so that the power density of the magnetron sputtering technology can be greatly improved, thereby significantly improving the plasma ionization rate and the thin film deposition rate.

Description

Technical Field

[0001] The invention relates to the technical field of magnetron sputtering cathodes, in particular to the technical field of high ionization and rapid deposition magnetron sputtering, and specifically to a magnetron sputtering cathode. Background Art

[0002] Magnetron sputtering technology has been widely used in the preparation of functional coatings because of its advantages such as low-temperature deposition, easy control of film thickness, and good repeatability. However, the current traditional magnetron sputtering technology faces the problem of low plasma ionization rate, which on the one hand leads to low energy of deposited particles, seriously affecting the density and bonding force of the coating; on the other hand, it leads to small beam flow of deposited particles, seriously affecting the deposition efficiency of the coating.

[0003] In order to improve the ionization rate, the industry has proposed high-power pulsed magnetron sputtering technology (HiPIMS), which uses high-intensity pulse discharge to ionize a large number of deposited particles, and greatly improves the controllability of the coating structure through ion energy control, optimizing the mechanical properties of the coating. However, the introduction of pulses causes frequent sparking during the discharge process, affecting the stability of the discharge. At the same time, the extremely small duty cycle and severe ion reabsorption also lead to a significant reduction in the coating deposition rate, and the increased cost cannot meet the needs of industrial large-scale production. In view of this, a new generation of magnetron sputtering technology, continuous high-power magnetron sputtering technology (C-HPMS), is proposed by combining the high duty cycle of DC discharge with the high ionization rate of pulse discharge. It can not only maintain the ionization rate at the level of HiPIMS technology, but also greatly improve the deposition efficiency of the coating, and is expected to achieve high ionization and rapid deposition at the same time.

[0004] However, as the core equipment of magnetron sputtering, the magnetron sputtering cathode cannot withstand such high-power discharge. Under normal working conditions, its power density is generally only 10-20W / cm 2 , which is far lower than the requirement of C-HPMS. Once the power density of the magnetron sputtering cathode is too high, the heat generated by the discharge will cause problems such as target melting, magnet demagnetization, structural deformation, and seal failure, leading to serious consequences such as water leakage, air leakage, and short circuit, making it difficult to meet the high power density magnetron sputtering discharge requirements.

[0005] Therefore, the existing magnetron sputtering cathodes still need to be improved and developed. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a novel magnetron sputtering cathode structure in view of the above-mentioned defects of the existing magnetron sputtering cathode, aiming to solve the problem that the existing cathode cannot meet the demand for continuous high-power magnetron sputtering discharge.

[0007] The technical solution adopted by the present invention to solve the technical problem is as follows:

[0008] A magnetron sputtering cathode, comprising: a target material, a cooling system, a magnet frame, a magnet, a magnetic conductive plate and a base;

[0009] The target material is arranged directly above the cooling system;

[0010] The cooling system is arranged directly above the magnet frame, and comprises: a shell, a hollow portion of the shell forming a cooling channel, and the cooling channel has an inlet and an outlet;

[0011] A plurality of grids with heat-conducting properties are arranged in the shell, and the grids divide the cooling channel into a plurality of branch channels;

[0012] The two ends of the flow diversion channel are respectively connected with the inlet and the outlet of the cooling channel;

[0013] The coolant in the branch channel flows in the branch channel in a laminar flow manner;

[0014] The magnet frame is arranged directly above the base, and a magnet mounting groove is arranged on one side of the magnet frame facing the base;

[0015] The magnet is arranged in the magnet mounting groove;

[0016] The magnetic conductive plate is arranged on the outer side and the bottom of the magnet.

[0017] The magnetron sputtering cathode, wherein the height of a single grid is 1 to 20 mm, the width is 0.1 to 10 mm, and the flow rate of the coolant at the inlet is greater than 0.5 L / s.

[0018] The magnetron sputtering cathode, wherein the inlet has one or more inlets, and the multiple inlets are arranged symmetrically or asymmetrically; and / or

[0019] There are one or more outlets, and the multiple outlets are arranged symmetrically or asymmetrically; and / or

[0020] The width of the cross section of a single inlet is 2 to 20 mm, and the cross-sectional shape of the inlet is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3; and / or

[0021] The width of the cross section of a single outlet is 2 to 20 mm, and the cross-sectional shape of the outlet is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3; and / or

[0022] The cross-section of the flow divider is in the shape of one of the basic shapes or a combination of basic shapes, wherein the basic shape includes: a circle, an ellipse, a sector, an arc or a polygon or at least one thereof, and the polygon is a shape with a side number greater than or equal to 3; and / or

[0023] The shape of the longitudinal section of the branch channel is one of the basic lines or a combination of basic lines, wherein the basic line includes at least one of a straight line, a curve, or a broken line.

[0024] The magnetron sputtering cathode, wherein the material of the grid is one or more of a material having thermal conductivity and mechanical properties but not having magnetic conductivity and an alloy thereof; and / or

[0025] The surface of the grid is deposited with a thermally conductive material to accelerate heat dissipation; and / or

[0026] The magnet frame is made of non-magnetic material; and / or

[0027] The magnet is a ferromagnetic material; and / or

[0028] The magnetic conductive plate is made of soft magnetic material.

[0029] The magnetron sputtering cathode, wherein the material of the grid includes at least one of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and alloys thereof;

[0030] At least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid;

[0031] The magnet frame is made of non-magnetic copper, aluminum, stainless steel and alloy materials thereof; and / or

[0032] The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20 to 1000 mT; and / or

[0033] The magnetic conductive plate is at least one of a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate, and a SU430 steel magnetic conductive plate; and / or

[0034] The thickness of the magnetic conductive plate is greater than 2 mm; and / or

[0035] The base is made of a non-magnetic structural material; and / or

[0036] The thickness of the base is 10-50 mm.

[0037] The magnetron sputtering cathode, wherein the target material is a metal single substance or compound composed of Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanide metals and actinide metals; and / or

[0038] The target material is a mixed target or a spliced ​​target.

[0039] The magnetron sputtering cathode, wherein the power supply mode of the magnetron sputtering cathode includes at least one of high-power pulsed magnetron sputtering, DC magnetron sputtering, pulsed magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, and composite pulsed magnetron sputtering, and the average power density of the magnetron sputtering cathode is 50 to 400 W / cm 2 ; and / or

[0040] The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode; and / or

[0041] The length of the magnetron sputtering cathode is 0.05-10m.

[0042] The magnetron sputtering cathode, wherein the cooling system has one or more cooling systems, and the multiple cooling systems are arranged side by side or overlapped; and / or

[0043] The coolant is one of tap water, deionized water, purified water, mineral water, and a coolant containing a functional agent.

[0044] Beneficial effect: Several grids are arranged in the cooling system of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into several branch channels by the grids. The coolant flowing in from the inlet is divided into each branch channel respectively, and finally converges to the outlet to flow out. Since the coolant flows in the branch channel in the form of laminar flow, and the grid with high thermal conductivity increases the heat exchange area and heat exchange efficiency, the thermal cycle efficiency of the magnetron sputtering cathode is effectively improved, and rapid and uniform cooling is achieved, so that the power density of the magnetron sputtering technology can be greatly improved, thereby significantly improving the plasma ionization rate and the film deposition rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 It is a temperature distribution diagram of the cooling system in the prior art.

[0046] Figure 2 It is a cross-sectional schematic diagram of the centrally controlled sputtering cathode of the present invention.

[0047] Figure 3 It is a schematic longitudinal section diagram of the centrally controlled sputtering cathode of the present invention.

[0048] Figure 4 It is a simulated temperature (K) distribution diagram of the controlled sputtering cathode in the specific embodiment 1 of the present invention.

[0049] Figure 5 It is a cross-sectional temperature (°C) distribution diagram of the controlled sputtering cathode in the specific embodiment 1 of the present invention.

[0050] Figure 6 It is a relationship diagram of the flow rate and pressure of the sputtering cathode controlled in the specific embodiment 1 of the present invention.

[0051] Figure 7 This is a relationship diagram between the flow rate and temperature difference of the sputtering cathode controlled in the first specific embodiment of the present invention.

[0052] Figure 8 It is a simulated temperature (K) distribution diagram of the controlled sputtering cathode in the second specific embodiment of the present invention.

[0053] Fig. 9 This is a simulated temperature (K) distribution diagram of the sputtering cathode of the third specific embodiment of the present invention.

[0054] Fig.10 : is a simulated temperature (K) distribution diagram of the sputtering cathode with two cooling systems in the present invention.

[0055] Description of reference numerals:

[0056] 1. Target material; 2. Cooling system; 21. Grid; 22. Diverter channel; 3. Magnet rack; 4. Magnet; 5. Magnetic plate; 6. Base. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solution and advantages of the present invention clearer and more specific, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0058] Please also see Figure 2-Figure 10 , the present invention provides some embodiments of a magnetron sputtering cathode.

[0059] like Figure 2-Figure 3 As shown, the magnetron sputtering cathode of the present invention comprises six parts: a target material 1, a cooling system 2, a magnet frame 3, a magnet 4, a magnetic conductive plate 5 and a base 6;

[0060] The target material 1 is arranged directly above the cooling system 2;

[0061] The cooling system 2 is arranged directly above the magnet frame 3, and comprises: a shell, a hollow portion of the shell forming a cooling channel, and the cooling channel has an inlet and an outlet;

[0062] A plurality of grids 21 with heat-conducting properties are arranged in the shell, and the grids 21 divide the cooling channel into a plurality of branch channels 22;

[0063] The two ends of the branch channel 22 are respectively connected to the inlet and outlet of the cooling channel;

[0064] The coolant in the branch channel 22 flows in the branch channel 22 in a laminar flow manner;

[0065] The magnet frame 3 is arranged directly above the base 6, and a magnet mounting groove is arranged on one side of the magnet frame 3 facing the base 6;

[0066] The magnet 4 is arranged in the magnet mounting groove;

[0067] The magnetic conductive plate 5 is arranged on the outside and bottom of the magnet 4 .

[0068] Specifically, the cooling system 2 of the present invention is applied to continuous high-power magnetron sputtering equipment, and can be used as a cooling system for magnetron sputtering cathodes, for example, a cooling system for a gas ion source or a continuous cooling system for an arc source. Continuous high-power magnetron sputtering has both high plasma ionization rate and high deposition rate, which can not only improve the performance of the coating, but also improve the preparation efficiency, and has broad market prospects. However, conventional magnetron sputtering cathodes cannot withstand such high-power discharges. If the existing magnetron sputtering cathodes are applied to continuous high-power magnetron sputtering conditions, such as Figure 1 As shown, the maximum temperature of the target surface of the existing magnetron sputtering cathode exceeds 550K, and the minimum temperature is 400K. The overall temperature of the target surface is relatively high and the temperature difference is relatively large.

[0069] The base 6 and the magnet frame 3 are connected to form a receiving space to accommodate the magnetic conductive plate 5 and the magnet 4. Specifically, a magnet mounting groove is formed on the side of the magnet frame 3 facing the base 6 to install the magnet 4, and the magnetic conductive plate 5 is arranged on the outer side and bottom of the magnet 4. A cooling system mounting groove is formed on the side of the magnet frame 3 facing away from the base 6 to install the cooling system, and the target 1 is located on the side of the cooling system facing away from the base 6.

[0070] A plurality of grids 21 are arranged in the cooling system 2 of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into a plurality of branch channels 22 by the grids. The coolant entering the inlet is branched to each branch channel 22 respectively, and the coolant in the branch channel 22 flows in a laminar manner, and finally converges to the outlet and flows out. Since the coolant in the branch channel 22 flows in the form of laminar flow, and the grid with high thermal conductivity increases the heat exchange area and heat exchange efficiency, the thermal cycle efficiency of the magnetron sputtering cathode is effectively improved, and rapid and uniform cooling is achieved, so the power density of the magnetron sputtering technology can be greatly improved, and the plasma ionization rate and the film deposition rate can be significantly improved. On the one hand, the present invention can increase the cooling area; on the other hand, it can basically eliminate turbulence and form an almost completely laminar flow mode, so as to achieve rapid and uniform heat exchange, thereby effectively increasing the maximum discharge power density that the magnetron sputtering cathode can withstand, so that the magnetron sputtering cathode can break through the inherent limitation of low discharge power, which has an important driving role and practical significance for further improving the comprehensive performance of the coating and accelerating the deposition efficiency of the coating.

[0071] In a preferred implementation of the embodiment of the present invention, Figure 2-Figure 3 As shown, the height of a single grid 21 is 1 to 20 mm, the width is 0.1 to 10 mm, and the flow rate of the coolant at the inlet is greater than 0.5 L / s. Specifically, when the height of a single grid 21 is 1 to 20 mm, the width of a single grid 21 is 0.1 to 10 mm, and the flow rate of the coolant at the inlet is greater than 1 L / s, it is conducive to forming a better laminar flow, ensuring faster cooling efficiency and more uniform temperature of the cooling system 2.

[0072] In a preferred implementation of the embodiment of the present invention, Figure 4 , Figure 8-Figure 10 As shown, there are one or more inlets, and the multiple inlets are arranged symmetrically or asymmetrically.

[0073] Specifically, the inlet can be set to one or more as needed. When multiple inlets are used, part of the branch channel 22 can be connected to a certain inlet instead of all inlets. When multiple inlets are used, the multiple inlets can be symmetrically arranged on both sides of the cooling system 2. Of course, an asymmetrical arrangement can also be used, for example, two inlets are used, and both inlets are located on one side of the cooling system 2.

[0074] In a preferred implementation of the embodiment of the present invention, Figure 4 , Figure 8-Figure 10 As shown, there are one or more outlets, and the multiple outlets are arranged symmetrically or asymmetrically.

[0075] Specifically, the outlet can be set to one or more as needed. When multiple outlets are used, part of the branch channel 22 can be connected to a certain outlet instead of all outlets. When multiple outlets are used, the multiple outlets can be symmetrically arranged on both sides of the cooling system 2. Of course, an asymmetrical arrangement can also be used, for example, two outlets are used, and both outlets are located on one side of the cooling system 2.

[0076] In a preferred implementation of the embodiment of the present invention, Figure 3 , Figure 4 , Figure 8-Figure 10 As shown, the width of the cross section of a single entrance is 2 to 20 mm, and the cross-sectional shape of the entrance is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3.

[0077] Specifically, the width of the cross section of the entrance here refers to the distance between the two points on the profile of the cross section of the entrance that are the farthest apart, that is, regardless of the cross-sectional shape of the entrance, the width of the cross section of the entrance is 2 to 20 mm. The cross-sectional shape of the entrance can be set as needed, and can be circular, elliptical, rectangular, or triangular. Of course, a figure formed by merging and combining these figures can also be used, for example, a quadrilateral formed by two triangles approaching each other, and another example is a pentagon formed by a rectangle and a triangle approaching each other. The polygon can be a triangular shape, a quadrilateral, a pentagon, a hexagon, a heptagon, ..., an N-gon, where N represents the number of sides of the polygon. The triangular shape can specifically be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrilateral can be a convex quadrilateral such as a parallelogram, a rectangle, a square, a prism, etc., and the quadrilateral can also be a concave quadrilateral. Similarly, the polygon can be a concave polygon or a convex polygon, and can be a regular polygon or an irregular polygon.

[0078] In a preferred implementation of the embodiment of the present invention, Figure 3 , Figure 4 , Figure 8-Figure 10 As shown, the width of the cross section of a single outlet is 2 to 20 mm, and the cross-sectional shape of the outlet is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3.

[0079] Specifically, the width of the cross section of the outlet here refers to the distance between the two points farthest apart on the outline of the cross section of the outlet, that is, no matter how the cross-sectional shape of the outlet is, the width of the cross section of the outlet is 2 to 20 mm. The cross-sectional shape of the outlet can be set as needed, and can be circular, elliptical, rectangular, or triangular. Of course, a figure formed by merging and combining these figures can also be used, for example, a quadrilateral formed by two triangles approaching each other, and another example is a pentagon formed by a rectangle and a triangle approaching each other. The polygon can be a triangular, quadrilateral, pentagon, hexagon, heptagon, ..., N-gon, where N represents the number of sides of the polygon. The triangular shape can specifically be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrilateral can be a convex quadrilateral such as a parallelogram, a rectangle, a square, a prism, and the like, and the quadrilateral can also be a concave quadrilateral. Similarly, the polygon can be a concave polygon or a convex polygon, and can be a regular polygon or an irregular polygon.

[0080] In a preferred implementation of the embodiment of the present invention, Figure 5 As shown, the shape of the cross section of the branch channel 22 is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3.

[0081] Specifically, the cross section of the diverter 22 refers to the surface perpendicular to the flow direction of the diverter 22. The cross-sectional shape of the diverter 22 can be set as needed, and can be circular, elliptical, rectangular, or triangular. Of course, a figure formed by merging and combining these figures can also be used, for example, a quadrilateral formed by two triangles close together, and another example is a pentagon formed by a rectangle and a triangle close together. The polygon can be a triangle, a quadrilateral, a pentagon, a hexagon, a heptagon, ..., an N-gon, where N represents the number of sides of the polygon. The triangle can specifically be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrilateral can be a convex quadrilateral such as a parallelogram, a rectangle, a square, a prism, etc., and the quadrilateral can also be a concave quadrilateral. Similarly, the polygon can be a concave polygon or a convex polygon, and can be a regular polygon or an irregular polygon.

[0082] It should be emphasized that the basic figure in the present invention can be a closed curve formed by connecting several straight lines and / or curves in sequence. Different inlet cross-sectional shapes, outlet cross-sectional shapes and cross-sectional shapes of the diverter can be obtained through the basic figure or the combined figure formed by the basic figure.

[0083] In a preferred implementation of the embodiment of the present invention, Figure 3 As shown, the shape of the longitudinal section of the branch channel 22 is one of the basic lines or a combination of basic lines, wherein the basic line includes at least one of a straight line, a curve, or a broken line.

[0084] Specifically, the longitudinal section of the diverter channel 22 refers to the plane perpendicular to the flow direction of the diverter channel 22. The shape of the longitudinal section of the diverter channel 22 can be set as needed, and can adopt straight lines, curves, or broken lines. Of course, it is also possible to adopt a shape formed by combining these shapes, for example, a stepped shape formed by connecting straight lines and straight lines, and a waist shape formed by connecting straight lines and curves.

[0085] In a preferred implementation of the embodiment of the present invention, the material of the grid 21 is one or more of a material having thermal conductivity and mechanical properties but not having magnetic conductivity and its alloys. The material of the grid is one or more of a material having excellent thermal conductivity, good mechanical properties, and not having magnetic conductivity and its alloys.

[0086] In a preferred implementation of the embodiment of the present invention, the material of the grid 21 includes at least one of copper, brass, aluminum or stainless steel. The material of the grid 21 can be one or more of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and other materials with excellent thermal conductivity, good mechanical properties and no magnetic conductivity and their alloys.

[0087] In a preferred implementation of the embodiment of the present invention, in order to increase heat transfer, a thermally conductive material is deposited on the surface of the grid 21 to accelerate heat dissipation.

[0088] Specifically, since the inner wall of the flow divider 22 is formed with a thermally conductive material, the heat on the housing and the grid 21 is easily transferred to the coolant, thereby improving the efficiency of heat transfer.

[0089] In a preferred implementation of the embodiment of the present invention, at least one of high thermal conductivity materials such as graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid 21 .

[0090] Specifically, a high thermal conductivity material such as graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid 21 .

[0091] In a preferred implementation of an embodiment of the present invention, the target material 1 is a single substance or compound composed of non-magnetic elements. The magnetic conductive elements are Fe, Co and Ni. Non-magnetic elements refer to elements other than Fe, Co and Ni. For example, the target material 1 is a metal single substance or compound composed of Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanide metals and actinide metals.

[0092] Specifically, the target material 1 of the magnetron sputtering cathode of the present invention has a wide range of applications, and can be a single substance or compound formed by elements such as Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I, lanthanide metals and actinide metals.

[0093] In a preferred implementation of the embodiment of the present invention, the target material 1 is a mixed target or a spliced ​​target.

[0094] Specifically, a mixed target refers to a target material including at least two simple substances or compounds, and a spliced ​​target refers to an integral target material formed by splicing at least two target materials. A single target material, a mixed target material or a spliced ​​target material can be used as required.

[0095] In a preferred implementation of the embodiment of the present invention, the magnet frame 3 is made of non-magnetic conductive material. Specifically, the magnet frame 3 is made of non-magnetic conductive material.

[0096] In a preferred implementation of the embodiment of the present invention, the magnet frame 3 is made of non-magnetic copper, aluminum, stainless steel and alloy materials thereof.

[0097] Specifically, the magnet frame 3 is made of materials and alloys thereof with excellent thermal conductivity, good mechanical properties and no magnetic conductivity, for example, copper, aluminum, stainless steel and alloys thereof can be used, and the copper can be red copper or brass.

[0098] In a preferred implementation of the embodiment of the present invention, Figure 2As shown, the magnet 4 is made of ferromagnetic material, and is specifically made of ferromagnetic material.

[0099] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the magnet 4 is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet 4 is 20 to 1000 mT.

[0100] Specifically, the magnet 4 can be a permanent magnet, which can be at least one of a rare earth permanent magnet or a ferrite permanent magnet. The rare earth permanent magnet can be a NdFeB permanent magnet, a SmCo permanent magnet, a NdNiCo permanent magnet, etc. The magnetic induction intensity of the magnetic pole surface of the magnet 4 is 20 to 1000 mT. The magnet 4 can be composed of one or more pieces, and its shape can be a simple basic figure or a complex combination figure such as a cube, a column, a trapezoid or a cut corner, and the arrangement can be a regular 3 rows, 5 rows, 7 rows, 9 rows, etc., a traditional odd number arrangement, or an even number distribution, or a specific distribution in certain patterns.

[0101] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the magnetic conductive plate 5 is made of soft magnetic material, and the magnetic conductive plate 5 is specifically made of soft magnetic material.

[0102] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the magnetic conductive plate 5 is at least one of all magnetic conductive materials such as a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate, and a SU430 steel magnetic conductive plate.

[0103] Specifically, the magnetic conductive plate 5 refers to a device made of soft magnetic material. For example, the soft magnetic material can be any magnetic conductive material such as pure iron magnetic conductive plate, pure nickel magnetic conductive plate, pure cobalt magnetic conductive plate, SU430 steel magnetic conductive plate, etc.

[0104] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the thickness of the magnetic conductive plate 5 is greater than 2 mm. Specifically, the thickness of the magnetic conductive plate 5 is set according to needs. When the magnetic conductive plate 5 with a thickness greater than 2 mm is used, the effect of the magnetic conductive plate 5 is ensured to be better.

[0105] In a preferred implementation of the embodiment of the present invention, Figure 2 As shown, the base 6 is made of a non-magnetic structural material. Specifically, any non-magnetic material of any structure can be used, and the base 6 is made of a non-magnetic structural material, for example, a non-magnetic stainless steel base.

[0106] In a preferred implementation of the embodiment of the present invention, Figure 2As shown, the thickness of the base 6 is 10 to 50 mm. Specifically, the thickness of the base 6 is set according to needs. When a base 6 with a thickness greater than 10 to 50 mm is used, the strength and weight of the base 6 are ensured to be appropriate.

[0107] In a preferred implementation of the embodiment of the present invention, the power supply mode of the magnetron sputtering cathode includes at least one of high-power pulsed magnetron sputtering, DC magnetron sputtering, pulsed magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, and composite pulsed magnetron sputtering, and the average power density of the magnetron sputtering cathode is 50 to 400 W / cm 2 Specifically, a corresponding power supply is configured according to the parameters required for magnetron sputtering.

[0108] In a preferred implementation of the embodiment of the present invention, the magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode.

[0109] Specifically, the shape of the magnetron sputtering cathode can be set as needed. Of course, when using cathodes of different shapes, the shape of the cooling system 2 also needs to be adjusted accordingly to adapt to the cathode to achieve a better cooling effect.

[0110] In a preferred implementation of the embodiment of the present invention, the length of the magnetron sputtering cathode is 0.05-10 m. Specifically, the length of the magnetron sputtering cathode can be set as required.

[0111] In a preferred implementation of the embodiment of the present invention, Figure 4 , Figure 8-Figure 10 As shown, the cooling system 2 has one or more cooling systems 2, and the multiple cooling systems 2 are arranged side by side or overlapped in sequence. Specifically, the cooling system 2 can adopt one or more cooling systems. When multiple cooling systems 2 are adopted, they can be put together to form a cooling system with a larger size to expand the cooling area, or they can be arranged in sequence and overlapped to improve the cooling effect. Of course, the two can also be combined with each other.

[0112] In a preferred implementation of the embodiment of the present invention, the coolant is one of tap water, deionized water, purified water, mineral water, and a coolant containing a functional agent.

[0113] Specifically, the coolant can be water, and the water can be tap water, deionized water, purified water, mineral water, or water containing functional agents, wherein the functional agents include rust removers, preservatives, and the like. Specific embodiment 1

[0115] like Figure 4As shown, the magnetron sputtering cathode of this embodiment has an inlet and two outlets, the inlet is located in the middle of the cooling system, and the two outlets are symmetrically arranged on both sides of the cooling system. The inlet and outlet are circular in shape with a diameter of 10 mm; the grid 21 is 8 mm in height and 1 mm in width, with a rectangular cross section and a straight longitudinal section. The width of each branch channel 22 between the grids 21 is 6 mm, and graphene is deposited on the surface of the grid 21; the material used for the magnet frame 3 is copper; the material of the target material 1 is copper; the magnet 4 is a NdFeB permanent magnet, the magnetic induction intensity on the pole surface is 420 mT, the shape is a cube, and it is a traditional three-row arrangement, with a total of 30 pieces; the magnetic short-circuit material is SU430 steel with a thickness of 5 mm; the base 6 is made of SU304 steel with a thickness of 20 mm; the power supply mode of the magnetron sputtering cathode is high-power pulsed magnetron sputtering, and the power density of the target surface etching area is 200 W / cm 2 ; The coolant is deionized water with a flow rate of 2L / s; the magnetron sputtering cathode device is a rectangular cathode with a length of 300mm, and its cooling system includes a set of Figure 2 The sub-cooling system shown in the figure. At this time, the temperature distribution of the water channel is as follows Figure 4 As shown in Figure 2, the temperature difference of the entire water channel does not exceed 20°C, and the temperature distribution of the pipe section is relatively uniform (such as Figure 5 Changing the inlet flow rate will affect the temperature difference (such as Figure 6 as shown) and inlet pressure (as Figure 7 As shown in the figure, it has a certain effect. Within the range allowed by the pressure, the larger the flow rate, the better the cooling effect. Specific embodiment 2

[0117] like Figure 8 As shown, different from the first embodiment, the magnetron sputtering cathode has an inlet and an outlet, and the inlet and the outlet are located on both sides of the cooling system. Figure 4 As shown, the temperature difference of the entire water channel does not exceed 12°C. Specific embodiment three

[0119] like Fig. 9 As shown, the difference from the second embodiment is that the magnetron sputtering cathode, the inlet and outlet are located in the middle of the cooling system. At this time, the temperature distribution of the water channel is as follows Figure 4 As shown, the temperature difference of the entire water channel does not exceed 11°C.

[0120] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A magnetron sputtering cathode, characterized in that: include: It consists of six parts: target material, cooling system, magnet frame, magnet, magnetic plate and base; The target material is arranged directly above the cooling system; The cooling system is arranged directly above the magnet frame, and comprises: a shell, a hollow portion of the shell forming a cooling channel, and the cooling channel has an inlet and an outlet; A plurality of grids with heat-conducting properties are arranged in the shell, and the grids divide the cooling channel into a plurality of branch channels; The two ends of the flow diversion channel are respectively connected with the inlet and the outlet of the cooling channel; The coolant in the branch channel flows in the branch channel in a laminar flow manner; The magnet frame is arranged directly above the base, and a magnet mounting groove is arranged on one side of the magnet frame facing the base; The magnet is arranged in the magnet mounting groove; The magnetic conductive plate is arranged on the outside and bottom of the magnet; The height of a single grid is 1 to 20 mm, the width is 0.1 to 10 mm, and the flow rate of the coolant at the inlet is greater than 0.5 L / s; The average power density of the magnetron sputtering cathode is 50-400 W / cm 2 .

2. The magnetron sputtering cathode according to claim 1, characterized in that: There are one or more inlets, and the multiple inlets are arranged symmetrically or asymmetrically; and / or There are one or more outlets, and the multiple outlets are arranged symmetrically or asymmetrically; and / or The width of the cross section of a single inlet is 2 to 20 mm, and the cross-sectional shape of the inlet is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3; and / or The width of the cross section of a single outlet is 2 to 20 mm, and the cross-sectional shape of the outlet is one of the basic figures or a combination of basic figures, wherein the basic figure includes: at least one of a circle, an ellipse, a fan, an arc or a polygon, and the polygon is a figure with a side number greater than or equal to 3; and / or The cross-section of the flow divider is in the shape of one of the basic shapes or a combination of basic shapes, wherein the basic shape includes: a circle, an ellipse, a sector, an arc or a polygon or at least one thereof, and the polygon is a shape with a side number greater than or equal to 3; and / or The shape of the longitudinal section of the branch channel is one of the basic lines or a combination of basic lines, wherein the basic line includes at least one of a straight line, a curve, or a broken line.

3. The magnetron sputtering cathode according to claim 1, characterized in that: The material of the grid is one or more of a material having thermal conductivity and mechanical properties but not having magnetic conductivity and an alloy thereof; and / or The surface of the grid is deposited with a thermally conductive material to accelerate heat dissipation; and / or The magnet frame is made of non-magnetic material; and / or The magnet is made of ferromagnetic material; and / or The magnetic conductive plate is made of soft magnetic material.

4. The magnetron sputtering cathode according to claim 3, characterized in that: The material of the grid includes at least one of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and alloys thereof; At least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid; The magnet frame is made of non-magnetic copper, aluminum, stainless steel and alloy materials thereof; and / or The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20 to 1000 mT; and / or The magnetic conductive plate is at least one of a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate, and a SU430 steel magnetic conductive plate; and / or The thickness of the magnetic conductive plate is greater than 2 mm; and / or The base is made of a non-magnetic structural material; and / or The thickness of the base is 10-50 mm.

5. The magnetron sputtering cathode according to claim 1, characterized in that: The target material is a metal single substance or compound composed of Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanide metals and actinide metals; and / or The target material is a mixed target or a spliced ​​target.

6. The magnetron sputtering cathode according to any one of claims 1 to 5, characterized in that: The power supply mode of the magnetron sputtering cathode includes at least one of high-power pulse magnetron sputtering, DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering, and composite pulse magnetron sputtering; and / or The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode; and / or The length of the magnetron sputtering cathode is 0.05-10m.

7. The magnetron sputtering cathode according to any one of claims 1 to 5, characterized in that: There are one or more cooling systems, and multiple cooling systems are arranged side by side or overlapped; and / or The coolant is one of tap water, deionized water, purified water, mineral water, and a coolant containing a functional agent.

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