A dual magnetron sputtering device and semiconductor process equipment

Abstract

A dual magnetron sputtering device and semiconductor process equipment, the dual magnetron sputtering device comprises a main rotating beam, a first magnetron, a second magnetron and a rotating component; the first magnetron and the second magnetron are respectively arranged at the two ends of the main rotating beam; the rotating component comprises a first rotating part and a second rotating part, the first rotating part is used to connect a driving source to drive the rotating component to rotate, the second rotating part is connected to the center of the main rotating beam, and there is a preset distance between the rotating shaft of the first rotating part and the rotating shaft of the second rotating part; a limiting member is provided on the main rotating beam, which is used to abut against the rotating part when the rotating part rotates forward or reversely, so that the rotating part drives the first magnetron and the second magnetron to rotate around the first rotating part, and one of the first magnetron and the second magnetron rotates within the target material range, and the other at least partially rotates outside the target material. The device of the present invention does not need to use a counterweight, which can effectively reduce the overall weight of the device.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and more specifically, relates to a dual magnetron sputtering device and semiconductor process equipment. Background Art

[0002] Physical vapor deposition (PVD) technology or sputtering deposition technology is the most widely used type of thin film manufacturing technology in the semiconductor industry. It generally refers to the thin film preparation process that uses physical methods to prepare thin films. The magnetron is the core of magnetron sputtering. In the semiconductor industry, in order to prevent the particles / particle clusters sputtered from the target from re-depositing on the target surface and then forming particles, the magnetron is generally required to be able to achieve full target corrosion. With the continuous development and iteration of semiconductor technology, higher requirements are placed on PVD deposition technology, especially in some processes that require hole filling. In order to improve the step coverage of the hole and reduce the difference in coverage between the center and edge of the wafer, more detailed and strict control of the sputtering area is required, and full target corrosion cannot be achieved.

[0003] In the prior art, a dual magnetron is used to erode the target material, wherein the main rotating arm is connected to the rotating center, a counterweight is fixed at one end of the main rotating arm, and two auxiliary rotating arms connected by bearings are connected at the other end, each auxiliary rotating arm is connected to a magnetron, and the rotation of the main rotating arm can drive the magnetron to move, and the magnetic field track of the magnetron far from the rotating center is extinguished because it is located above the grounding point, and only the magnetron close to the main rotating center is ignited. However, the structure is relatively complex, and the bearing at one end of the main rotating arm is unevenly stressed in the overall weight, which is prone to wear.

[0004] Therefore, it is necessary to design a new dual-magnetron sputtering device that can reduce the overall weight of the magnetron and make the bearing force uniform. Summary of the invention

[0005] The object of the present invention is to provide a dual magnetron sputtering device and semiconductor process equipment, which can reduce the overall weight of the magnetron and make the bearing force uniform.

[0006] In order to achieve the above-mentioned object, the present invention provides a dual magnetron sputtering device for sputtering and etching a target material in a semiconductor process equipment, comprising a main rotating beam, a first magnetron, a second magnetron and a rotating component; wherein:

[0007] The first magnetron and the second magnetron are respectively arranged at two ends of the main rotating beam;

[0008] The rotating component comprises a first rotating part and a second rotating part, the first rotating part is used to connect to a driving source to drive the rotating component to rotate, the second rotating part is rotatably connected to the center of the main rotating beam, and a preset distance is provided between the rotating axis of the first rotating part and the rotating axis of the second rotating part;

[0009] A limiter is provided on the main rotating crossbeam for abutting against the rotating component when the rotating component rotates forward or reversely, so that the rotating component drives the first magnetron and the second magnetron to rotate around the first rotating part, and one of the first magnetron and the second magnetron rotates within the target material range, and the other at least partially rotates outside the target material.

[0010] Preferably, the limiting component includes a first limiting block and a second limiting block arranged on both sides of the center of the main rotating beam. When the rotating component rotates in a clockwise direction and a counterclockwise direction, it can contact the first limiting block and the second limiting block respectively, thereby driving the main rotating beam to rotate in a clockwise direction and a counterclockwise direction.

[0011] Preferably, the first limit block and the second limit block are symmetrically arranged at both ends of the center of the main rotating beam, and when the rotating component abuts against the first limit block or the second limit block, the projections of the axis of the first rotating part, the axis of the second rotating part, the center of the first magnetron and the center of the second magnetron on a plane perpendicular to the axis are located on a straight line.

[0012] Preferably, the preset distance ranges from 5 to 30 mm.

[0013] Preferably, the rotating component comprises a rotating body, a driven rotating shaft and a driving rotating shaft; wherein,

[0014] The driven shaft and the driving shaft are arranged at both ends of the rotating body and are located on opposite sides of the rotating body. The driving shaft forms the rotating axis of the first rotating part, and the driven shaft forms the rotating axis of the second rotating part, and the driven shaft is rotatably connected to the rotating hole set in the center of the main rotating beam.

[0015] Preferably, the driven rotating shaft and the rotating hole are rotatably connected via a bearing.

[0016] Preferably, along the width direction of the main rotating beam, the first limit block and the second limit block are located on the same side of the main rotating beam, and are used to abut against the side wall of the rotating body.

[0017] Preferably, the main rotating crossbeam and the rotating body are both strip-shaped, and the width of the main rotating crossbeam is the same as the width of the rotating body.

[0018] Preferably, the weight of the first magnetron and the weight of the second magnetron are substantially equal.

[0019] The present invention also provides a semiconductor process equipment, comprising: a process chamber and a target material, wherein the target material is arranged on the top opening of the process chamber, and also comprises the above-mentioned dual magnetron sputtering device.

[0020] The dual magnetron sputtering device of the present invention has the beneficial effect that the first magnetron and the second magnetron are respectively arranged at the two ends of the main rotating beam, and there is no need to use a counterweight block, so that the overall weight of the device can be effectively reduced.

[0021] Other features and advantages of the present invention will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and other objects, features and advantages of the present invention will become more apparent through a more detailed description of exemplary embodiments of the present invention in conjunction with the accompanying drawings, wherein like reference numerals generally represent like components throughout the exemplary embodiments of the present invention.

[0023] Figure 1 The schematic diagram of the structure of the dual magnetron sputtering device in the prior art is shown;

[0024] Figure 2 shows a top view of a dual magnetron sputtering apparatus according to an exemplary embodiment of the present invention;

[0025] Figure 3 shows a cross-sectional view of a dual magnetron sputtering apparatus according to an exemplary embodiment of the present invention;

[0026] Figure 4 A schematic diagram showing a state in which the rotation center of a dual magnetron sputtering device according to an exemplary embodiment of the present invention rotates clockwise;

[0027] Figure 5 A schematic diagram showing a state in which the rotation center of a dual magnetron sputtering device according to an exemplary embodiment of the present invention rotates counterclockwise.

[0028] Description of reference numerals:

[0029] 1. Main rotating beam, 11. First limiting block, 12. Second limiting block, 2. First magnetron, 3. Second magnetron, 4. Rotating component, 41. Rotation center, 42. Rotating body, 43. Driven rotating shaft, 44. Driving rotating shaft, 5. Bearing;

[0030] 14. Main rotation center, 150. Main rotation arm, 154. Rotation counterweight, 160. First bearing, 162. Second bearing, 164. Second secondary rotation arm, 168. First secondary rotation arm, 174. Second limiting column, 176. First limiting column, 62. Fourth magnetron, 64. Third magnetron. DETAILED DESCRIPTION

[0031] The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0032] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0033] like Figure 1As shown, in the prior art, dual magnetrons are used to erode the target material. The main rotating arm 150 is connected to the main rotating center 14. One end of the main rotating arm 150 is provided with a fixedly connected rotating counterweight 154, and the other end is hoisted by two opposite first auxiliary rotating arms 168 and second auxiliary rotating arms 164 through a first bearing 160 and a second bearing 162. The relative position between the two auxiliary rotating arms is fixed, and the ends are respectively connected to the third magnetron 64 and the fourth magnetron 62. When the main rotating center 14 rotates clockwise, the third magnetron 64 moves inward toward the main rotating arm 150 under the action of water resistance, and the first limiting column 176 on the third magnetron 64 contacts the main rotating arm 150 and is limited; when the main rotating center 14 rotates counterclockwise, the fourth magnetron 62 moves inward toward the main rotating arm 150, and the second limiting column 174 on the fourth magnetron 62 contacts the main rotating arm 150 and is limited. Through the structure of two magnetrons, the magnetic field track of the magnetron far from the main rotation center 14 is extinguished because it is located above the grounding point, and only the magnetron close to the main rotation center 14 is ignited. The magnetron close to the main rotation center 14 can fully erode the target, which can achieve a good target cleaning effect; the magnetron far from the main rotation center 14 can cover part of the target area according to process requirements to ensure that the process results meet the requirements. However, the above structure is relatively complex and heavy overall. The first bearing 160 and the second bearing 162 at one end of the main rotation arm 150 are unevenly stressed and easily wear out.

[0034] Therefore, in order to solve the problems existing in the prior art, Figure 2 , Figure 3 As shown, the present invention provides a dual magnetron sputtering device for sputtering and etching a target material in a semiconductor process equipment. Specifically, the dual magnetron sputtering device includes a main rotating beam 1, a first magnetron 2, a second magnetron 3 and a rotating component 4; wherein,

[0035] The first magnetron 2 and the second magnetron 3 are respectively arranged at two ends of the main rotating beam 1;

[0036] The rotating component 4 includes a first rotating part and a second rotating part, the first rotating part is used to connect to a driving source to drive the rotating component 4 to rotate, the second rotating part is rotatably connected to the center of the main rotating beam 1, and there is a preset distance between the rotating axis of the first rotating part and the rotating axis of the second rotating part;

[0037] A limiter is provided on the main rotating beam 1, which is used to abut against the rotating component 4 when the rotating component 4 rotates forward or reversely, so that the rotating component 4 drives the first magnetron 2 and the second magnetron 3 to rotate around the first rotating part, and one of the first magnetron 2 and the second magnetron 3 rotates within the target material range, and the other at least partially rotates outside the target material.

[0038] In the dual magnetron sputtering device of the present invention, the first magnetron 2 and the second magnetron 3 are respectively arranged at two ends of the main rotating beam 1, without using a counterweight, so that the overall weight of the device can be effectively reduced.

[0039] The preset distance between the rotation axis of the first rotating part and the rotation axis of the second rotating part is d, and the preset distance d ranges from 5 to 30 mm. The difference between the first magnetron 2 and the second magnetron 3 at the inner and outer positions can be controlled by the size of this distance.

[0040] The limiting member includes a first limiting block 11 and a second limiting block 12 arranged on both sides of the center of the main rotating beam 1. When the rotating component 4 rotates in the clockwise direction and the counterclockwise direction, it can contact the first limiting block 11 and the second limiting block 12 respectively, thereby driving the main rotating beam 1 to rotate in the clockwise direction and the counterclockwise direction.

[0041] The main rotating beam 1 is used to fix the first magnetron 2 and the second magnetron 3, and drive the first magnetron 2 and the second magnetron 3 to rotate. The first limit block 11 and the second limit block 12 are symmetrically arranged at both ends of the center of the main rotating beam 1, and when the rotating component 4 abuts against the first limit block 11 or the second limit block 12, the axis of the first rotating part, the axis of the second rotating part, the center of the first magnetron 2 and the center of the second magnetron 3 are projected on a plane perpendicular to the axis on a straight line.

[0042] In this embodiment, the first limit block 11 is fixed between the center of the main rotating beam 1 and the first magnetron 2 , and the second limit block 12 is fixed between the center of the main rotating beam 1 and the second magnetron 3 .

[0043] Along the width direction of the main rotating beam 1, the first limit block 11 and the second limit block 12 are located on the same side of the main rotating beam 1, and are used to abut against the side wall of the rotating body 42. When the rotating component 4 rotates to contact the first limit block 11 or the second limit block 12, the rotating component 4 is aligned with the main rotating beam 1.

[0044] The rotating component 4 includes a rotating body 42, a driven rotating shaft 43 and a driving rotating shaft 44; wherein,

[0045] The driven shaft 43 and the driving shaft 44 are arranged at both ends of the rotating body 42 and are located on opposite sides of the rotating body 42; the driving shaft 44 forms the rotating shaft of the first rotating part, and the driven shaft 43 forms the rotating shaft of the second rotating part, and the driven shaft 43 is rotatably connected to the rotating hole set in the center of the main rotating beam 1.

[0046] The rotating component 4 can be integrally formed, and the driving shaft 44 is connected to the driving source. The driving source used here can be a motor, and the center of the driving shaft 44 is the rotation center 41; the driven shaft 43 is rotatably connected to the center of the main rotating beam 1, and the driving source drives the driving shaft 44 to rotate, driving the rotating body 42 to rotate. When the rotating body 42 rotates, the driven shaft 43 rotates relative to the main rotating beam 1. When the rotating body 42 rotates until the side wall abuts against the first limit block 11 or the second limit block 12, the first limit block 11 or the second limit block 12 can be pushed to move, thereby driving the main rotating beam 1 to rotate, thereby realizing the rotation of the dual magnetron sputtering device.

[0047] When the rotation center 41 coincides with the center of the main rotating beam 1, the magnetrons at both ends of the main rotating beam 1 will rotate along the same trajectory regardless of whether the rotation is forward or reverse, and the effect of full target corrosion is poor. In the dual magnetron sputtering device of the present invention, the distance between the driven shaft 43 and the driving shaft 44 is the preset distance between the rotation axis of the first rotating part and the rotation axis of the second rotating part. Through this distance, the center of the main rotating beam 1 and the rotation center 41 can be eccentrically arranged, and the rotation center 41 coincides with the center of the target material and the center of the magnetron cavity wall, so that the main rotating beam 1 can rotate in a rotating manner. When the rotation center 41 rotates as the center of a circle, at least part of the first magnetron 2 or the second magnetron 3 at both ends of the main rotating beam 1 can be located outside the target material and rotate along different tracks, one of which can cover the surface of the target material and start normally, and the other track exceeds the surface of the target material. Structurally, the target material is placed on the top of the chamber, and a liner is arranged in the chamber and close to the inner wall of the chamber. Since the liner is grounded, when the magnetron extends out of the target material, the magnetic field track generated by the magnetron is at least partially located above the liner and grounded through the liner. Since the magnetic field track of the magnetron is grounded, it will not start. By selecting the magnetron for starting by selecting the rotation direction, the detailed and strict control of the sputtering area is improved to achieve full target corrosion.

[0048] The driven rotating shaft 43 is rotationally connected to the rotating hole in the center of the main rotating beam 1 via a bearing 5 .

[0049] In this embodiment, a concave area is provided on the outer periphery of the driven rotating shaft 43, and the bearing sleeve is mounted on the concave area; a first shaft portion extends upward from the center of the main rotating beam 1, and a second shaft portion extends downward, and the first shaft portion is concentric with the second shaft portion, and a rotating hole passes through the first shaft portion and the second shaft portion. The rotating hole is a stepped hole, including a large diameter hole and a small diameter hole connected up and down, the bearing 5 is located in the large diameter hole, and the end of the driven rotating shaft 43 is located in the small diameter hole.

[0050] In the dual magnetron sputtering device of the present invention, the weight of the first magnetron 2 is substantially equal to the weight of the second magnetron 3. The magnetrons are arranged at both ends of the main rotating beam 1, and the weight of the magnetrons is designed to make the weight of the first magnetron 2 and the second magnetron 3 substantially equal, thereby ensuring that the bearing 5 is subjected to uniform force, and avoiding wear and tear that may occur due to long-term uneven force. The bearing 5 can be a linear bearing.

[0051] The target is disc-shaped, and the center of the target coincides with the center of the rotating component 44, that is, the center of the rotating center 41; Figure 5 As shown, the dotted circle b represents the range of the magnetron cavity wall, the solid circle a represents the range where the outer edge of the target material is located, the rotating component 4 rotates counterclockwise until it contacts the second limit block 12 and drives the main rotating beam 1 to rotate counterclockwise. When the rotating component 4 drives the main rotating beam 1 to rotate counterclockwise, the second magnetron 3 is within the range a where the target material is located, that is, the second magnetron 3 is located on the surface of the target material and can be normally ignited. The first magnetron 2 is beyond the range a where the target material is located, beyond the target material surface, and is located within the range b of the magnetron cavity wall. It will not be ignited due to grounding;

[0052] like Figure 4 As shown, the dotted circle b represents the range of the magnetron cavity wall, the solid circle a represents the range where the outer edge of the target material is located, the rotating component 4 rotates clockwise until it contacts the first limit block 11 and drives the main rotating beam 1 to rotate clockwise. When the rotating component 4 drives the main rotating beam 1 to rotate clockwise, the first magnetron 2 is within the range a where the target material is located, that is, the first magnetron 2 is located on the surface of the target material and can be normally ignited. The second magnetron 3 is beyond the range a where the target material is located, beyond the target material surface, and is located within the range b of the magnetron cavity wall. It will not be ignited due to grounding.

[0053] The dual magnetron sputtering device of the present invention changes the positions of the two magnetrons relative to the rotation center 41 by rotating the magnetrons in different directions, so that the magnetic field track of the magnetron far from the rotation center 41 is always extinguished because it is located above the grounding point, and only the magnetron close to the rotation center 41 is ignited. One of the two magnetrons can erode the entire target, which can achieve a good target cleaning effect; the other can cover a partial area of ​​the target according to process requirements to ensure that the process results meet the requirements.

[0054] The distance between the driven shaft 43 and the driving shaft 44 is the preset distance d between the rotation axis of the first rotating part and the rotation axis of the second rotating part, and the center of the driving shaft 44 is the rotation center 41, and the driven shaft 41 is rotatably connected to the center of the main rotating beam 1. By controlling the size of the preset distance d, the difference between the first magnetron 2 and the second magnetron 3 at the inner and outer positions can be controlled. When the influence of the magnetron radius is ignored, the centers of the first magnetron 2 and the second magnetron 3 coincide with the two ends of the main rotating beam 1 respectively; the radius of the target material with the rotation center 41 as the center is R, the radius of the main rotating beam 1 is r, and (rd) is satisfied <R<(r+d);

[0055] When the rotating component 4 drives the main rotating beam 1 to rotate counterclockwise with the rotating center 41 as the center, the rotating radius of the first magnetron 2 is r+d, and the rotating radius of the second magnetron 3 is rd. The rotating radius of the first magnetron 2 is 2d larger than the rotating radius of the second magnetron 3.

[0056] When the rotating component 4 drives the main rotating beam 1 to rotate clockwise, the rotation radius of the first magnetron 2 is rd, the rotation radius of the second magnetron 3 is r+d, and the rotation radius of the second magnetron 3 is 2d greater than that of the first magnetron 2 .

[0057] As a preferred solution, the preset distance d may be in the range of 8-15 mm.

[0058] In this embodiment, the preset distance d is 10 mm.

[0059] The present invention also provides a semiconductor process equipment, comprising: a process chamber and a target material, wherein the target material is arranged on the top opening of the process chamber, and also comprises the above-mentioned dual magnetron sputtering device.

[0060] The embodiments of the present invention have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A dual magnetron sputtering device for sputtering and etching a target material in a semiconductor process equipment, characterized in that: It comprises a main rotating beam (1), a first magnetron (2), a second magnetron (3) and a rotating component (4); wherein: The first magnetron (2) and the second magnetron (3) are respectively arranged at two ends of the main rotating beam (1); The rotating component (4) comprises a first rotating part and a second rotating part, the first rotating part is used to connect to a driving source to drive the rotating component (4) to rotate; the second rotating part is rotatably connected to the center of the main rotating beam (1), and a preset distance exists between the rotating axis of the first rotating part and the rotating axis of the second rotating part; The main rotating crossbeam (1) is provided with a stopper for contacting the rotating component (4) when the rotating component (4) rotates forward or reversely, so that the rotating component (4) drives the first magnetron (2) and the second magnetron (3) to rotate around the first rotating part, and one of the first magnetron (2) and the second magnetron (3) rotates within the target material range, and the other at least partially rotates outside the target material; The limiting member comprises a first limiting block (11) and a second limiting block (12) which are arranged on both sides of the center of the main rotating beam (1); when the rotating component (4) rotates in a clockwise direction and a counterclockwise direction, it can contact the first limiting block (11) and the second limiting block (12) respectively, thereby driving the main rotating beam (1) to rotate in the clockwise direction and the counterclockwise direction.

2. The dual magnetron sputtering device according to claim 1, characterized in that: The first limit block (11) and the second limit block (12) are symmetrically arranged at two ends of the center of the main rotating beam (1), and when the rotating component (4) and the first limit block (11) or the second limit block (12) are in contact, the projections of the axis of the first rotating part, the axis of the second rotating part, the center of the first magnetron (2) and the center of the second magnetron (3) on a plane perpendicular to the axis are located on a straight line.

3. The dual magnetron sputtering device according to claim 1, characterized in that: The preset distance ranges from 5 to 30 mm.

4. The dual magnetron sputtering device according to claim 1, characterized in that: The rotating component (4) comprises a rotating body (42), a driven rotating shaft (43) and a driving rotating shaft (44); wherein: The driven rotating shaft (43) and the driving rotating shaft (44) are arranged at two ends of the rotating body (42) and are located on opposite sides of the rotating body (42); the driving rotating shaft (44) forms the rotating shaft of the first rotating part; the driven rotating shaft (43) forms the rotating shaft of the second rotating part; and the driven rotating shaft (43) is rotatably connected to a rotating hole arranged at the center of the main rotating beam (1).

5. The dual magnetron sputtering device according to claim 4, characterized in that: The driven rotating shaft (43) is rotationally connected to the rotating hole via a bearing (5).

6. The dual magnetron sputtering device according to claim 4, characterized in that: Along the width direction of the main rotating beam (1), the first limit block (11) and the second limit block (12) are located on the same side of the main rotating beam (1) and are used to abut against the side wall of the rotating body (42).

7. The dual magnetron sputtering device according to claim 6, characterized in that: The main rotating crossbeam (1) and the rotating body (42) are both strip-shaped, and the width of the main rotating crossbeam (1) is the same as the width of the rotating body (42).

8. The dual magnetron sputtering device according to claim 1, characterized in that: The weight of the first magnetron (2) and the weight of the second magnetron (3) are substantially equal.

9. A semiconductor process equipment comprising: A process chamber and a target material, wherein the target material is arranged on the top opening of the process chamber, and is characterized in that it also includes a dual magnetron sputtering device according to any one of claims 1-8.

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