Metal etching liquid

Abstract

In order to overcome the problem in the prior art that the denaturation of alcohol amine compounds in etching solutions leads to weak residual removal effect, the present application provides a metal etching solution; the etching solution comprises the following components: hydrogen peroxide, an auxiliary oxidant, a metal chelating agent, a solubilizing agent, a residual remover and water, and the residual remover comprises a compound shown in structural formula I and an alcohol amine compound shown in structural formula II; in the etching solution provided by the present application, the compound shown in structural formula I inhibits the decomposition of the alcohol amine compound shown in structural formula II by reacting with hydrogen peroxide, thereby ensuring the residual removal effect during the etching process, etching without residue, and ensuring the reliability and life of the etching solution.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor and panel etching liquid, and in particular relates to a metal etching liquid. Background Art

[0002] Wet etching is the process of using chemical reagents to achieve the purpose of etching through chemical reactions. It is a means of producing metal layer patterns in the manufacturing process of semiconductors and panel displays. In recent years, while people's demand for displays has continued to increase, from liquid crystal displays to OLED displays, higher requirements have been placed on product quality and picture accuracy, and the effect of etching can directly affect the accuracy and quality of high-density fine wire images. In the past, aluminum or aluminum alloys were used for metal wiring of liquid crystal displays. However, with the large-scale, high-resolution and high-refresh rate of liquid crystal displays, the length of gate lines and data lines connected to thin-film transistors has increased, and the resistance of the response has increased accordingly, resulting in problems such as signal delay. Therefore, research has turned to materials with lower resistance, namely copper or copper-based alloy wiring combinations. Molybdenum and titanium have the characteristics of high adhesion to substrates such as glass, low diffusion efficiency, and barrier properties. Therefore, the process has been upgraded to form a laminated film containing copper or copper-based copper-molybdenum / copper-titanium alloys on substrates such as glass through a film forming process such as sputtering, and then an etching process using a photoresist as a mask to etch to form an electrode pattern. However, in order to achieve high-precision etching, the lateral etching depth must be controlled for etching of copper, copper-molybdenum, and copper-titanium composite wires. The lateral etching depth is positively correlated with the etching time. Compressing the etching time can reduce lateral etching, but it will also cause residual problems. The addition of alcohol amine compounds has a good effect on residual removal, but during the storage or use of the etching solution, alcohol amines are prone to slowly react with hydrogen peroxide to cause denaturation, which weakens the residual removal effect and affects the reliability and life of the solution. Summary of the invention

[0003] In view of the problems in the prior art that the removal effect of the etching solution residue is weak and the removal effect is unstable, the present application provides a metal etching solution.

[0004] In order to solve the above technical problems, the present application provides a metal etching solution, which includes the following components: hydrogen peroxide, an auxiliary oxidant, a metal chelating agent, a solubilizing agent, a residue remover and water, wherein the residue remover contains an alcohol amine compound shown in structural formula II and a compound shown in structural formula I:

[0005]

[0006] Wherein, R1, R2, and R3 are each independently selected from C n H 2n , n≤3;

[0007]

[0008] Wherein, R4, R5, and R6 are independently selected from C1-C4 substituted or unsubstituted alkyl groups, and at least one hydrogen atom on the carbon of R4, R5, and R6 is replaced by a hydroxyl group.

[0009] Preferably, the compound represented by structural formula I is selected from one or more of triethanolamine amine oxide and triisopropanolamine amine oxide.

[0010] Preferably, the alcoholamine compound represented by the structural formula II includes one or more of ethanolamine, isopropanolamine, triethanolamine, triisopropanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N,N-dimethylethanolamine, N,N-dimethylisopropanolamine.

[0011] Preferably, based on the total weight of the etching solution being 100%, the mass percentage of the hydrogen peroxide is 5% to 25%; the mass percentage of the auxiliary oxidant is 0.01% to 6%; the mass percentage of the metal chelating agent is 1% to 10%; the mass percentage of the solubilizing agent is 0.1% to 5%; the mass percentage of the residual remover is 2% to 15%, of which the mass percentage of the alcohol amine compound is 1.5 to 10%, and the mass percentage of the compound represented by structural formula I is 0.1% to 5%; the remainder is water.

[0012] Preferably, the auxiliary oxidant includes one or more of an organic acid, an inorganic acid or their salts, the organic acid is a straight-chain carboxylic acid, and the organic acid includes one or more of oxalic acid, malonic acid, succinic acid, glutaric acid and glycolic acid; the inorganic acid or its salt includes one or more of phosphoric acid, sulfuric acid, nitric acid, and their corresponding ammonium salts, sodium salts or potassium salts.

[0013] Preferably, the metal chelator is a compound containing two or more of hydroxyl, carboxyl and amino groups at the same time;

[0014] The metal chelating agent includes one or more of citric acid, malic acid, 2,3-dihydroxysuccinic acid, iminodiacetic acid, and ethylenediaminetetraacetic acid.

[0015] Preferably, the solubilizer includes one or more of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol, dipropylene glycol, diethylene glycol, ethylene glycol and polyethylene glycol.

[0016] Preferably, the etching solution further comprises a hydrogen peroxide stabilizer having a mass percentage of 0.01% to 2%;

[0017] The hydrogen peroxide stabilizer includes one or more of phenylurea, hexylamine, octylamine, ethylenediamine, cyclohexylamine, aniline, N,N-dimethylaniline and diethylaniline.

[0018] Preferably, the etching solution also includes an etching regulator with a mass percentage of 0.001 to 1%, and the etching regulator is a nitrogen-containing heterocyclic compound, and the nitrogen-containing heterocyclic compound includes one or more of 8-hydroxyquinoline, benzotriazole, hydroxymethylbenzotriazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, 1,2,4-triazole, methyltetrazole, guanine, and adenine.

[0019] Beneficial effects:

[0020] The metal etching solution provided by the present application uses a composition of an alcohol amine compound shown in structural formula II and a compound shown in structural formula I as a residual remover, which can effectively remove the residue generated during the etching process and avoid the occurrence of short circuit problems; the compound shown in structural formula I alone is not effective as a residual remover. In addition, compared with only adding the alcohol amine compound shown in structural formula II, the compound shown in structural formula I contained in the residual remover can inhibit the reaction of the alcohol amine compound with hydrogen peroxide, thereby ensuring the residual removal effect during the etching process and improving the reliability and service life of the solution. The etching solution provided by the present application has a stable residual remover effect, no residue after etching, and the etching solution has high reliability and service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is the SEM image after etching of Example 1;

[0022] Figure 2 is the SEM image after etching of Example 2;

[0023] Figure 3 is the SEM image after etching of Example 3;

[0024] Figure 4 is the SEM image after etching of Example 5;

[0025] Figure 5 is the SEM image after etching of Comparative Example 1;

[0026] Figure 6 This is the SEM image after etching of Comparative Example 2;

[0027] Figure 7 This is the SEM image of comparative example 3 after etching. DETAILED DESCRIPTION

[0028] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0029] The present application provides a metal etching solution, the etching solution comprising the following components: hydrogen peroxide, an auxiliary oxidant, a metal chelating agent, a solubilizing agent, a residue remover and water, the residue remover comprising a compound represented by structural formula I and an alcoholamine compound represented by structural formula II;

[0030] The compound represented by the structural formula I:

[0031]

[0032] Wherein, R1, R2, and R3 are each independently selected from C n H 2n , n≤3;

[0033] The alcoholamine compound shown in the structural formula II is as follows:

[0034]

[0035] Wherein, R4, R5, and R6 are independently selected from C1-C4 substituted or unsubstituted alkyl groups, and at least one hydrogen on the carbon in R4, R5, and R6 is replaced by a hydroxyl group.

[0036] In metal etching liquid, alcohol amine compounds have a good effect on residue removal, but they are easy to react slowly with hydrogen peroxide to cause their denaturation, which weakens the effect of removing residues. After a lot of research, the inventors found that adding a composition of an alcohol amine compound shown in structural formula II and a compound shown in structural formula I to the etching liquid as a residue remover can effectively remove the residues generated during the etching process and avoid the occurrence of short circuit problems; compared with only adding the alcohol amine compound shown in structural formula II, the compound shown in structural formula I can inhibit the reaction of the alcohol amine compound and hydrogen peroxide, ensuring the residue removal effect during the etching process and improving the reliability and service life of the liquid.

[0037] Specifically, R1, R2, and R3 in the compound shown in Structural Formula 1 are each independently selected from C n H 2n , n≤3, such as R1, R2, and R3 can be independently selected from CH2, CH2CH2, and CH(CH3)CH2.

[0038] In the alcoholamine compounds shown in structural formula II, R4, R5, and R6 can be independently selected from substituted or unsubstituted C1-C4 alkyl groups, and at least one hydrogen atom on the carbon in R4, R5 and R6 is replaced by a hydroxyl group; for example, the unsubstituted C1-C4 alkyl group can be methyl, ethyl, propyl, butyl, or isopropyl; the substituted group means that at least one hydrogen atom on the carbon in the C1-C4 alkyl group is replaced by a hydroxyl group.

[0039] In some preferred embodiments, the compound represented by structural formula 1 includes one or more of triethanolamine amine oxide and triisopropanolamine amine oxide.

[0040] In some preferred embodiments, the alcoholamine compound shown in structural formula II includes one or more of ethanolamine, isopropanolamine, triethanolamine, triisopropanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N,N-dimethylethanolamine, and N,N-dimethylisopropanolamine.

[0041] In some embodiments, the total weight of the etching solution is 100%, the mass percentage of the hydrogen peroxide is 2% to 25%, the mass percentage of the auxiliary oxidant is 0.01% to 6%, the mass percentage of the metal chelating agent is 1% to 10%, the mass percentage of the solubilizing agent is 0.1% to 5%, the mass percentage of the residual remover is 2% to 15%, wherein the mass percentage of the alcoholamine compound shown in structural formula II is 1.5 to 10%, and the mass percentage of the compound shown in structural formula I is 0.1% to 5%; the balance is water.

[0042] The compound shown in structural formula I is not ideal when used alone as a residue remover, but because it contains a NO bond, it can inhibit the reaction of alcohol amine compounds and hydrogen peroxide. When used in combination with alcohol amine compounds, the residue removal effect during the etching process is guaranteed, and at the same time, the residue removal performance of the residue remover can be effectively prevented from weakening over time. The inventors have found through research that adding 0.1% to 5% of the compound shown in structural formula I in the etching solution can effectively inhibit the reaction between alcohol amine compounds and hydrogen peroxide, ensure the removal of residues during the etching process of the etching solution, and ensure that there is no residue after etching. If the mass content of the compound shown in structural formula I is less than 0.1%, the NO bond content in the etching solution is low, and the inhibitory effect is reduced; if the mass content of the compound shown in structural formula I is higher than 5%, the inhibitory effect becomes worse due to the steric effect caused by the increased concentration.

[0043] In some preferred embodiments, the mass content of the compound represented by structural formula I is more than 10% of the mass content of the residual remover.

[0044] Hydrogen peroxide is mainly an oxidant for copper and its alloys, and plays the role of oxidizing copper and its alloys. Adding hydrogen peroxide with a mass content of 5% to 25% to the etching solution not only ensures the oxidation ability of hydrogen peroxide and ensures the effective etching, but also controls the etching rate to maintain within a suitable range and controls the effective progress of the etching process. The mass content of hydrogen peroxide in the etching solution can be 5%, 8%, 10%, 13%, 15%, 18%, 20%, 22% or 25%, etc., as long as it is between 5% and 25%.

[0045] In some preferred embodiments, the mass content of hydrogen peroxide is 5% to 20%.

[0046] The auxiliary oxidant mainly provides H + , dissolving metal oxides. The auxiliary oxidant includes one or more of an organic acid, an inorganic acid or their salts. The organic acid is a straight-chain carboxylic acid. The organic acid includes one or more of oxalic acid, malonic acid, succinic acid, glutaric acid and glycolic acid. The inorganic acid or its salt includes one or more of phosphoric acid, sulfuric acid and nitric acid, and their corresponding ammonium salts, sodium salts or potassium salts. For example, the ammonium salts corresponding to phosphoric acid include ammonium dihydrogen phosphate, diammonium hydrogen phosphate, etc.; the potassium salts corresponding to phosphoric acid include potassium dihydrogen phosphate, etc.

[0047] The mass content of the auxiliary oxidant added to the etching solution is 0.01% to 6%, which can provide hydrogen ions for dissolving metal oxides and ensure the orderly progress of the etching process. Specifically, the mass content of the auxiliary oxidant in the etching solution can be 0.01%, 0.05%, 0.08%, 0.1%, 0.5%, 0.6%, 0.8%, 1.0%, 1.5%, 1.8%, 2.0%, 2.4%, 2.8%, 3.2%, 3.6%, 3.8%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, etc.

[0048] In some preferred embodiments, the mass content of the auxiliary oxidant is 0.05% to 3%.

[0049] The metal chelator can chelate the free metal ions in the etching solution, thereby slowing down the self-decomposition reaction of hydrogen peroxide and enhancing the stability of the etching solution. The metal chelator is a compound containing two or more groups of hydroxyl, carboxyl and amino at the same time, and the metal chelator includes one or more of citric acid, malic acid, 2,3-dihydroxysuccinic acid, iminodiacetic acid and ethylenediaminetetraacetic acid.

[0050] In some embodiments, the mass content of the metal chelator is between 1% and 10%, preferably 2% to 8%. If the content of the metal chelator is less than 1%, it will cause poor metal chelation ability, causing hydrogen peroxide to decompose too quickly, posing a greater safety hazard, and will also cause problems such as reduced etching cone angle, etching deviation and uniformity; if the content of the chelator is higher than 10%, it is easy to cause the problem of incomplete dissolution of the chelator. The mass content of the metal chelator in the etching solution is between 1% and 10%, such as 1%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, 6.5%, 7.0%, 7.5%, 8.0%, 8.5%, 9.0%, 9.5%, 10.0%, etc.

[0051] In the etching solution, a solubilizing agent with a mass content of 0.5 to 5% is added. The solubilizing agent is mainly used to increase the service life of the etching solution and improve the uniformity of the etching solution. The solubilizing agent includes one or more of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol, dipropylene glycol, diethylene glycol, ethylene glycol and polyethylene glycol. For example, the mass content of the solubilizing agent can be 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, etc.

[0052] The etching solution contains 1.5-10% by mass of the alcoholamine compound of structural formula II. The amino group in the alcoholamine compound of structural formula II can chelate with the etched metal ions, thereby facilitating the removal of metal residues and maintaining the etching rate of the etching solution, so that the etching proceeds smoothly. The mass content of the alcoholamine compound of structural formula II can be 1.5%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, 6.5%, 7.0%, 7.5%, 8.0%, 8.5%, 9.0%, 9.5%, 10.0%, etc.

[0053] In some preferred embodiments, the alcoholamine compound shown in structural formula II includes one or more of ethanolamine, isopropanolamine, triethanolamine, triisopropanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N,N-dimethylethanolamine, and N,N-dimethylisopropanolamine.

[0054] The etching solution also includes a hydrogen peroxide stabilizer with a mass percentage of 0.01% to 2%. The hydrogen peroxide stabilizer can prevent the violent decomposition of hydrogen peroxide during the etching process, prevent hydrogen peroxide from decomposing peroxide and hydrogen ions too quickly, and reduce the decomposition activity of hydrogen peroxide to 10% or less of the original, maintain the etching rate of the etching solution, make the etching proceed smoothly, ensure the safety of the etching operation, and extend the life of the etching solution. The hydrogen peroxide stabilizer is mainly a nitrogen-containing compound, and the hydrogen peroxide stabilizer includes one or more of phenylurea, hexylamine, octylamine, ethylenediamine, cyclohexylamine, aniline, N,N-dimethylaniline and diethylaniline. The mass content of hydrogen peroxide can be 0.01%, 0.03%, 0.05%, 0.08%, 0.1%, 0.3%, 0.5%, 0.6%, 0.8%, 1.0%, 1.2%, 1.5%, 1.8%, 2.0%, etc.

[0055] In some preferred embodiments, the mass percentage of the hydrogen peroxide stabilizer is 0.1% to 1%.

[0056] In order to adjust the etching rate of the etching solution, thereby effectively improving the etching cone angle and reducing the etching deviation, the etching solution is also added with an etching regulator with a mass percentage of 0.001% to 1%. The etching regulator is a nitrogen-containing heterocyclic compound. The nitrogen-containing heterocyclic compound includes one or more of 8-hydroxyquinoline, benzotriazole, hydroxymethylbenzotriazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, 1,2,4-triazole, methyltetrazole, guanine, and adenine.

[0057] The mass content of the etching regulator in the etching solution can be 0.001%, 0.005%, 0.008%, 0.01%, 0.05%, 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, etc.

[0058] The preparation method of the metal etching solution provided by the present invention is simple, and only requires mixing the components in corresponding weight parts evenly at room temperature.

[0059] In the present invention, hydrogen peroxide is used as an oxidant, which has strong oxidizing properties and is green and environmentally friendly. It can oxidize metals such as copper and nickel very well, and the residue is removed by a residue remover, which is beneficial to etching; the composition of the alcohol amine compound shown in structural formula II and the compound shown in structural formula I is added as a residue remover, which can effectively remove the residue generated during the etching process and avoid the occurrence of short circuit problems; compared with only adding the alcohol amine compound shown in structural formula II, the compound shown in structural formula I can inhibit the reaction of the alcohol amine compound and hydrogen peroxide, ensure the residual removal effect during the etching process, and improve the reliability and service life of the liquid. In order to ensure operational safety and etching effect, auxiliary oxidants and metal chelating agents are used to dissolve metals, hydrogen peroxide stabilizers and etching regulators are used to inhibit the decomposition of hydrogen peroxide, control the etching rate and etching cone angle, reduce etching deviation, make etching stable, and ensure etching quality.

[0060] The specific embodiments of the present invention will be further explained below through examples, but it does not mean that the protection scope of the present invention is limited to the scope described in the examples.

[0061] Example 1

[0062] At room temperature, 12% by mass of hydrogen peroxide, 1.2% by mass of ammonium dihydrogen phosphate and 1% by mass of potassium dihydrogen phosphate as auxiliary oxidants, 7.2% by mass of citric acid as a metal chelating agent, 0.005% by mass of 5-aminotetrazole as an etching regulator, 0.25% by mass of phenylurea as a hydrogen peroxide stabilizer, 5% by mass of ethanolamine and 0.1% by mass of triethanolamine oxide as a residual remover, 0.5% by mass of diethylene glycol as a solubilizer, and the remaining mass of water are mixed and stirred to obtain an etching solution.

[0063] Examples 2-6 and Comparative Examples 1-3

[0064] The difference between Examples 2-6 and Comparative Examples 1-3 and Comparative Example 1 is that the types and mass contents of hydrogen peroxide, auxiliary oxidant, metal chelating agent, etching regulator, hydrogen peroxide stabilizer, residue remover, and solubilizing agent are different, as shown in Table 1 for details.

[0065] Table 1 Etching solution parameters for Examples 1-3 and Comparative Examples 1-3

[0066]

[0067]

[0068] After the etching solutions prepared in Examples 1-6 and Comparative Examples 1-3 were left for 12 days, etching was performed. The etching time and etching temperature were kept the same. The etching residue results are shown in Table 2, where the scanning electron microscope images of the metals etched by the etching solutions are shown in Table 2. Figure 1-7 The SEM picture of the etching result of Example 1 is as follows Figure 1 As shown, the SEM picture of the etching result of Example 2 is as follows Figure 2 As shown, the SEM picture of the etching result of Example 3 is as follows Figure 3 As shown; Example 5 etching structure SEM picture as shown Figure 4 As shown; SEM picture of etching result of comparative example 1 is as follows Figure 5 As shown, the residue exists in the circled part of the figure. The SEM picture of the etching result of comparative example 2 is as follows Figure 6 As shown, the residue exists in the circled part of the figure. The SEM picture of the etching result of comparative example 3 is as follows Figure 7 As shown, the residue exists in the circled portion in the figure.

[0069] Table 2 Etching results of Examples 1-6 and Comparative Examples 1-3

[0070] Group Residue after etching Example 1 No residue Example 2 No residue Example 3 No residue Example 4 No residue Example 5 Trace residue Example 6 No residue Comparative Example 1 Large amount of residue Comparative Example 2 A small amount of residue Comparative Example 3 Large amount of residue

[0071] Through Table 1-2 and Figure 1-7It is concluded that the compound shown in structural formula 1 is not added to comparative example 1, and there is residue after etching with the etching solution; Example 1 is compared with comparative example 1, and 0.1% of the compound shown in structural formula 1 is added to example 1, and the etching solution prepared by example 1 has no residue after etching, indicating that the compound shown in structural formula 1 is added to the etching solution, and it is speculated that the compound shown in structural formula 1 can inhibit the reaction of the alcohol amine compound shown in structural formula II with hydrogen peroxide, inhibit the decomposition of the residue remover, ensure the effect of the residue remover in removing the residue, and improve the reliability and life of the liquid. In comparative example 2, the content of the alcohol amine compound shown in structural formula II is increased, and there is a small amount of residue after etching, indicating that increasing the content of the alcohol amine compound can reduce the effect of residue, but due to the decomposition of the alcohol amine compound, the residue cannot be completely removed. In comparative example 3, the content of the alcohol amine compound shown in structural formula II is reduced, and there is a large amount of residue after etching. Comparative example 2 is compared with example 2, and comparative example 3 is compared with example 3. There is no residue in examples 2 and 3, indicating that the compound shown in structural formula 1 added to the etching solution can inhibit the reaction of the alcohol amine compound shown in structural formula II with hydrogen peroxide, and ensure the effect of the residue remover in completely removing the residue. In Examples 1-4 and 6, the compound of structural formula 1 is added, wherein the mass content of the compound of structural formula 1 is between 0.1% and 5%, and the obtained etching solution has no residue after etching; the mass content of the compound of structural formula 1 added in Example 5 is 6%, which is greater than 5%, and the etching solution prepared in Example 5 has a trace amount of residue after etching. It is speculated that the mass content of the compound of structural formula 1 in the etching solution is higher than 5%, and the steric effect caused by the increased concentration deteriorates the inhibition effect, causing residue after etching.

[0072] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A metal etching solution, characterized in that: The etching solution comprises the following components: hydrogen peroxide, an auxiliary oxidant, a metal chelating agent, a solubilizing agent, a residue remover and water, wherein the residue remover comprises a compound represented by structural formula I and an alcoholamine compound represented by structural formula II; The compound represented by the structural formula I is as follows: Structural formula Ⅰ Wherein, R1, R2, and R3 are each independently selected from C n H 2n , n≤3; The alcoholamine compound shown in the structural formula II is as follows: wherein R4, R5, and R6 are each independently selected from a C1-C4 substituted or unsubstituted alkyl group, and at least one hydrogen atom on the carbon of R4, R5, and R6 is replaced by a hydroxyl group; The total weight of the etching solution is 100%, the mass percentage of the hydrogen peroxide is 5% to 25%, the mass percentage of the auxiliary oxidant is 0.01% to 6%, the mass percentage of the metal chelating agent is 1% to 10%, the mass percentage of the solubilizing agent is 0.1% to 5%, the mass percentage of the residual remover is 2% to 15%, wherein the mass percentage of the alcohol amine compound represented by structural formula II is 1.5% to 10%, and the mass percentage of the compound represented by structural formula I is 0.1% to 5%; the balance is water.

2. The metal etching solution according to claim 1, characterized in that The compound shown in the structural formula I includes one or more of triethanolamine amine oxide and triisopropanolamine amine oxide.

3. The metal etching solution according to claim 1, characterized in that The alcoholamine compound shown in the structural formula II includes one or more of ethanolamine, isopropanolamine, triethanolamine, triisopropanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N,N-dimethylethanolamine, and N,N-dimethylisopropanolamine.

4. The metal etching solution according to claim 1, characterized in that: The auxiliary oxidant includes one or more of an organic acid, an inorganic acid or their salts, wherein the organic acid is a straight-chain carboxylic acid, and the organic acid includes one or more of oxalic acid, malonic acid, succinic acid, glutaric acid and glycolic acid; the inorganic acid or its salt includes one or more of phosphoric acid, sulfuric acid and nitric acid, and their corresponding ammonium salts, sodium salts or potassium salts.

5. The metal etching solution according to claim 1, characterized in that: The metal chelating agent is a compound containing two or more groups of hydroxyl, carboxyl and amino at the same time; The metal chelating agent includes one or more of citric acid, malic acid, 2,3-dihydroxysuccinic acid, iminodiacetic acid, and ethylenediaminetetraacetic acid.

6. The metal etching solution according to claim 1, characterized in that: The solubilizing agent includes one or more of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol, dipropylene glycol, diethylene glycol, ethylene glycol and polyethylene glycol.

7. The metal etching solution according to claim 1, characterized in that: The etching solution also includes a hydrogen peroxide stabilizer with a mass percentage of 0.01% to 2%; The hydrogen peroxide stabilizer includes one or more of phenylurea, hexylamine, octylamine, ethylenediamine, cyclohexylamine, aniline, N,N-dimethylaniline and diethylaniline.

8. The metal etching solution according to claim 1, characterized in that: The etching solution also includes an etching regulator with a mass percentage of 0.001-1%, wherein the etching regulator is a nitrogen-containing heterocyclic compound, and the nitrogen-containing heterocyclic compound includes one or more of 8-hydroxyquinoline, benzotriazole, hydroxymethylbenzotriazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, 1,2,4-triazole, methyltetrazole, guanine, and adenine.

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