Shielding isolation structure, plasma reactor, semiconductor processing apparatus and method

Abstract

The application provides a shielding isolation structure, a multi-cavity plasma reactor, a semiconductor processing device and a semiconductor processing method. The shielding isolation structure is arranged in an exhaust channel of the multi-cavity plasma reactor and comprises a shielding vertical plate made of a metal material and arranged along the extension direction of the exhaust channel to divide the exhaust channel into a plurality of exhaust units, wherein the exhaust channel comprises at least one exhaust hole on the side wall of each exhaust unit, and each exhaust unit is connected to a corresponding plasma reaction cavity via the at least one exhaust hole to exhaust the plasma reaction cavity; and a mounting base made of a metal material, fixedly connected to the inner wall of the exhaust channel and arranged at the bottom of the shielding vertical plate to support the shielding vertical plate, wherein a plurality of air passing holes are arranged on the mounting base to exhaust each exhaust unit via the plurality of air passing holes.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a shielding and isolation structure, a multi-cavity plasma reactor, a semiconductor processing apparatus, and a semiconductor processing method. Background Technology

[0002] In the semiconductor processing field, electromagnetic shielding is typically required for the multiple chambers of a multi-chamber plasma reactor to prevent radio frequency (RF) transmission. Current practices in this field involve using grounded shielding components to create electromagnetic shielding, preventing the strong electromagnetic waves generated by the radio frequency circuits from interfering with and causing noise to other circuits located nearby. However, this approach only addresses the interference from RF-generated electromagnetic waves; it does not solve the problems of plasmas converging in the extraction channel within the dual chambers and affecting each other's impedance, as well as the instability of reflected power and even alarms caused by crosstalk between the two chambers.

[0003] In order to overcome the above-mentioned defects of the existing technology, there is an urgent need in the field for a shielding and isolation structure to prevent the plasma in the two cavities from converging in the exhaust channel and to prevent them from affecting each other's impedance, so as to avoid unstable reflected power or even alarms, and to solve the shutdown caused by the mutual interference of the two cavities at a very low cost, thereby improving the stability, reliability and economy of the multi-cavity plasma reactor. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a shielding and isolation structure, a multi-cavity plasma reactor, a semiconductor processing apparatus, and a semiconductor processing method, which can prevent the plasma in the two cavities from converging in the exhaust channel and avoid mutual interference with impedance, thereby preventing unstable reflected power or even alarms. Furthermore, it solves the shutdown caused by the mutual interference problem between the two cavities at a very low cost, thereby improving the stability, reliability, and economy of the multi-cavity plasma reactor.

[0006] Specifically, the shielding and isolation structure provided by the first aspect of the present invention is disposed in the exhaust channel of a multi-cavity plasma reactor and includes: a shielding vertical plate made of metal material and disposed along the extending direction of the exhaust channel to divide the exhaust channel into multiple exhaust units, wherein the exhaust channel includes at least one exhaust hole on the side wall of each of the exhaust units, and the exhaust unit is connected to a corresponding plasma reaction chamber via the at least one exhaust hole to exhaust the plasma reaction chamber; and a mounting base made of metal material, fixedly connected to the inner wall of the exhaust channel and disposed at the bottom of the shielding vertical plate to support the shielding vertical plate, wherein the mounting base is provided with multiple vent holes for each of the exhaust units to exhaust gas through the multiple vent holes.

[0007] Furthermore, in some embodiments of the present invention, the air extraction channel is connected to an external pipe via a mounting flange, the first inner diameter of the mounting flange being smaller than the second inner diameter of the air extraction channel to form a boss at the bottom of the air extraction channel, and the mounting base is mounted on the boss to provide longitudinal support to the shielding vertical plate.

[0008] Furthermore, in some embodiments of the present invention, the contact portion between the shielding vertical plate and the side wall and / or top wall of the air extraction channel is provided with a first sealing gasket, and the contact portion between the mounting base and the side wall of the air extraction channel is provided with a second sealing gasket, so that the shielding isolation structure can be detachably installed in the air extraction channel and form the plurality of mutually isolated air extraction units.

[0009] Furthermore, in some embodiments of the present invention, the air extraction channel is grounded, and the first sealing gasket and / or the second sealing gasket is made of conductive rubber to construct a grounded equipotential ring structure around the shielding and isolation structure.

[0010] Furthermore, in some embodiments of the present invention, the plurality of air vents on the mounting base account for more than 50% of the total area, in order to form a mesh-like air vent structure.

[0011] Furthermore, in some embodiments of the present invention, the aperture of the air passage is determined according to the frequency of the driving radio frequency of the multi-cavity plasma reactor, and the aperture is smaller than the space required for the driving radio frequency to pass through.

[0012] Furthermore, in some embodiments of the present invention, the plurality of air passages have equal air passage areas in each of the air extraction units, so that each of the air extraction units can uniformly exhaust air through the plurality of air passages.

[0013] Furthermore, the multi-cavity plasma reactor provided according to a second aspect of the present invention includes: a plurality of plasma reaction chambers for performing plasma reactions respectively; an exhaust channel connected to each of the plasma reaction chambers and for synchronously exhausting each of the plasma reaction chambers; and a shielding and isolation structure as described above, wherein the shielding and isolation structure is disposed in the exhaust channel to divide the exhaust channel into a plurality of exhaust units, the exhaust channel including at least one exhaust hole on the side wall of each of the exhaust units, and the exhaust unit being connected to a corresponding plasma reaction chamber via the at least one exhaust hole to exhaust the plasma reaction chamber.

[0014] Furthermore, a semiconductor processing apparatus according to a third aspect of the present invention includes a multi-cavity plasma reactor as described above.

[0015] Furthermore, a semiconductor processing method according to a fourth aspect of the present invention includes the following steps: establishing plasma in a plurality of plasma reaction chambers of a multi-chamber plasma reactor as provided in the second aspect of the present invention to perform plasma processing on a plurality of wafers; and evacuating the plurality of plasma reaction chambers via an evacuation channel provided with a shielding and isolation structure in the multi-chamber plasma reactor. Attached Figure Description

[0016] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic diagram of the structure of a multi-cavity plasma reactor provided according to some embodiments of the present invention is shown.

[0018] Figure 2 A schematic diagram of a shielding and isolation structure provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A schematic flowchart of a semiconductor processing method according to some embodiments of the present invention is shown.

[0020] Figure 4A The diagram shows a 1 mm pressure cloud simulation result on a wafer of a fluid computing domain with a shielded isolation structure provided according to some embodiments of the present invention.

[0021] Figure 4B The diagram shows a 1 mm pressure cloud simulation result on a wafer of a fluid computing domain with an unshielded isolation structure provided according to some embodiments of the present invention.

[0022] Figure 5A The figure shows a simulation result of a 1 mm velocity cloud on a wafer of a fluid computing domain with a shielded isolation structure provided according to some embodiments of the present invention.

[0023] Figure 5B The figure shows a simulation result of a 1 mm velocity cloud on a wafer of a fluid computing domain with an unshielded isolation structure provided according to some embodiments of the present invention.

[0024] Figure 6A A simulation result of a 1 mm velocity vector on a wafer of a fluid computation domain with a shielded isolation structure provided according to some embodiments of the present invention is shown.

[0025] Figure 6B A simulation result of a 1 mm velocity vector on a wafer of a fluid computation domain with an unshielded isolation structure provided according to some embodiments of the present invention is shown. Detailed Implementation

[0026] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0027] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0028] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0029] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0030] As mentioned above, in the semiconductor processing field, it is typically necessary to electromagnetically shield the multiple chambers of a multi-chamber plasma reactor to prevent radio frequency (RF) transmission. Current practices in this field involve using grounded shielding components to create electromagnetic shielding, preventing the strong electromagnetic waves generated by the radio frequency circuits from interfering with and causing noise to other circuits located around the reactor. However, this approach only addresses the interference from the RF circuits; it does not solve the problems of plasmas converging in the extraction channel within the dual chambers and affecting each other's impedance, as well as the instability of reflected power and even alarms caused by crosstalk between the two chambers.

[0031] To overcome the aforementioned deficiencies in the prior art, this invention provides a shielding and isolation structure that can prevent plasmas in the dual cavities from converging in the extraction channel and from affecting each other's impedance, thereby avoiding unstable reflected power or even alarms. It also solves the shutdown caused by dual-cavity mutual interference at a very low cost, thereby improving the stability, reliability, and economy of the multi-cavity plasma reactor.

[0032] In some non-limiting embodiments, the shielding and isolation structure provided in the first aspect of the present invention can be configured in the multi-cavity plasma reactor provided in the second aspect of the present invention. This plasma reactor can be configured in the semiconductor processing apparatus provided in the third aspect of the present invention to implement the semiconductor processing method provided in the fourth aspect of the present invention.

[0033] Please refer to the following first. Figure 1 . Figure 1 A schematic diagram of the structure of a multi-cavity plasma reactor provided according to some embodiments of the present invention is shown.

[0034] like Figure 1As shown, a multi-chamber plasma reactor may include multiple plasma reaction chambers 11 and 12, an extraction channel 13, and a shielding and isolation structure 14. Here, the multiple plasma chambers 11 and 12 can be used to perform plasma reactions separately. The extraction channel 13 can connect to each of the aforementioned plasma chambers 11 and 12. The shielding and isolation structure 14 is disposed in the extraction channel 13 to divide the extraction channel 13 into multiple extraction units 16 and 17. The extraction channel 13 includes at least one extraction hole on the side wall of each extraction unit 16 and 17. The extraction unit 16 and 17 is connected to a corresponding plasma reaction chamber 11 or 12 via at least one of the aforementioned extraction holes to extract air from the plasma reaction chamber 11 or 12.

[0035] Please refer to the reference. Figure 1 and Figure 2 . Figure 2 A schematic diagram of a shielding and isolation structure provided according to some embodiments of the present invention is shown.

[0036] like Figure 2 As shown, the shielding and isolation structure 14 can be disposed in the evacuation channel 13 of the multi-cavity plasma reactor. The shielding and isolation structure 14 may include a shielding vertical plate 21 and a mounting base 22. Here, the shielding vertical plate 21 can be made of metal and can be arranged along the extending direction of the evacuation channel 13 to divide the evacuation channel 13 into multiple evacuation units 16, 17. The evacuation channel 13 includes at least one evacuation hole on the side wall of each of the evacuation units 16, 17. The evacuation units 16, 17 can be connected to a corresponding plasma reaction chamber 11, 12 via the at least one evacuation hole to evacuate the plasma reaction chamber 11, 12. In this way, the shielding and isolation structure 14 can prevent mutual interference of the dual-cavity radio frequency signals and prevent the convergence of the dual-cavity plasmas, thereby avoiding mutual impedance interference between the two cavities that could lead to unstable reflected power or even alarms, thus improving the stability and reliability of the multi-cavity plasma reactor.

[0037] Preferably, the metal material can be aluminum. This allows for a very low manufacturing cost for the aforementioned shielding structure, thereby resolving downtime caused by dual-cavity interference at a minimal cost, increasing production capacity, and ultimately improving the economics of the multi-cavity plasma reactor.

[0038] Furthermore, in some embodiments of the present invention, the aforementioned air extraction channel 13 can be connected to an external pipe via a mounting flange 18. The first inner diameter of the aforementioned mounting flange 18 can be smaller than the second inner diameter of the aforementioned air extraction channel 13, so as to form a boss 19 at the bottom of the aforementioned air extraction channel. The aforementioned mounting base 22 is mounted on the aforementioned boss 19 to provide longitudinal support to the aforementioned shielding vertical plate 21.

[0039] Furthermore, in some embodiments of the present invention, the contact portion between the shielding vertical plate 21 and the top wall of the exhaust channel 13 may be provided with a first sealing gasket 23. The contact portion between the mounting base 22 and the side wall of the exhaust channel 13 is provided with a second sealing gasket 24. In this way, the shielding isolation structure 14 can be detachably installed in the exhaust channel 13, forming the plurality of mutually isolated exhaust units 16, 17.

[0040] In other embodiments of the present invention, the shielding and isolation structure 14 may be integrally formed in the air extraction channel 13 to replace the connection method using the sealing gasket.

[0041] In other embodiments of the present invention, the shielding and isolation structure 14 may be integrally formed in the air extraction port to replace the connection method of using the sealing gasket.

[0042] Furthermore, in some embodiments of the present invention, the aforementioned exhaust channels 16 and 17 are grounded. The aforementioned first sealing gasket 23 and / or the aforementioned second sealing gasket 24 are made of conductive rubber to construct a grounded equipotential ring structure around the aforementioned shielding and isolation structure 14. In this way, the radio frequency within the aforementioned plasma cavities 11 and 12 can be directly conducted away through the ground, and the energy provided by the radio frequency for maintaining the plasma can be reduced, thereby allowing some of the plasma to be directly deionized through the aforementioned shielding vertical plate 21 and the aforementioned mounting base 22, and causing the passing plasma to be quickly extinguished.

[0043] Furthermore, in some embodiments of the present invention, the proportion of the above-mentioned plurality of air passages on the mounting base 22 may be greater than 50% to form a mesh air passage structure.

[0044] Furthermore, in some embodiments of the present invention, the aperture of the aforementioned vent is determined based on the frequency of the driving radio frequency of the aforementioned multi-cavity plasma reactor, and the aperture is smaller than the space required for the driving radio frequency to pass through. The aperture of this vent can be less than 4 mm to prevent the passage of radio frequency within the aforementioned plasma cavity.

[0045] Furthermore, in some embodiments of the present invention, the air passage areas of the aforementioned air passages in the aforementioned air extraction units 16 and 17 may be the same, so that each of the aforementioned air extraction units 16 and 17 can uniformly exhaust gas through the aforementioned multiple air passages. In this way, the uniformly distributed air passages can allow gas and plasma to pass through, thereby avoiding the pressure difference between the aforementioned plasma chambers 11 and 12.

[0046] Furthermore, in some embodiments of the present invention, the multi-cavity plasma reactor described above can be configured in the semiconductor processing apparatus provided in the third aspect of the present invention to implement the semiconductor processing method provided in the fourth aspect of the present invention.

[0047] Please refer to Figure 3 , Figure 3 A schematic flowchart of a semiconductor processing method according to some embodiments of the present invention is shown.

[0048] like Figure 3 As shown, during semiconductor processing using the aforementioned semiconductor processing apparatus, technicians can first establish plasma in the multiple plasma reaction chambers 11 and 12 of the multi-chamber plasma reactor to perform plasma processing on multiple wafers. Afterwards, technicians can evacuate the multiple plasma reaction chambers 11 and 12 via the evacuation channel 13, which is equipped with a shielding isolation structure 14 in the multi-chamber plasma reactor. Through the isolation shielding treatment of the shielding isolation structure 14, the plasma extracted from each plasma reaction chamber 11 and 12 no longer converges in the evacuation channel, thus avoiding mutual impedance interference between the plasma reaction chambers 11 and 12, preventing unstable reflected power or even alarms, and solving the downtime problem caused by dual-chamber mutual interference at a very low cost, thereby improving the stability, reliability, and economy of the multi-chamber plasma reactor.

[0049] For details regarding the impact of the shielding and isolation structure 14 provided by this invention on the plasma in each plasma reaction chamber 11 and 12, please refer to the following references. Figure 4A , Figure 4B , Figure 5A , Figure 5B , Figure 6A as well as Figure 6B . Figure 4A The diagram shows a 1 mm pressure cloud simulation result on a wafer of a fluid computing domain with a shielded isolation structure provided according to some embodiments of the present invention. Figure 4B The diagram shows a 1 mm pressure cloud simulation result on a wafer of a fluid computing domain with an unshielded isolation structure provided according to some embodiments of the present invention. Figure 5A The figure shows a simulation result of a 1 mm velocity cloud on a wafer of a fluid computing domain with a shielded isolation structure provided according to some embodiments of the present invention. Figure 5B The figure shows a simulation result of a 1 mm velocity cloud on a wafer of a fluid computing domain with an unshielded isolation structure provided according to some embodiments of the present invention. Figure 6A A simulation result of a 1 mm velocity vector on a wafer of a fluid computation domain with a shielded isolation structure provided according to some embodiments of the present invention is shown. Figure 6B A simulation result of a 1 mm velocity vector on a wafer of a fluid computation domain with an unshielded isolation structure provided according to some embodiments of the present invention is shown.

[0050] like Figure 4A , Figure 4B , Figure 5A, Figure 5B , Figure 6A as well as Figure 6B As shown, the pressure and velocity per 1 mm on the wafer processed by the plasma reactor with the shielding and isolation structure are basically the same as those per 1 mm on the wafer processed by the plasma reactor without the shielding and isolation structure. In other words, adding the shielding and isolation structure 14 to the plasma reactor will not have any adverse effect on the original function of the plasma reactor.

[0051] Those skilled in the art will understand that Figure 1 The dual-cavity plasma reactor shown is merely a non-limiting embodiment of the present invention, intended to clearly illustrate the main concept of the invention and provide some specific solutions that are easy for the public to implement, rather than being used to limit the scope of protection of the present invention.

[0052] Optionally, in other embodiments of the present invention, the plasma reactor may also include three plasma reaction chambers. Correspondingly, the shielding and isolation structure 14 may include three evacuation units to evacuate the plasma reaction chambers.

[0053] Optionally, in other embodiments of the present invention, the plasma reactor may include more than three plasma reaction chambers. Correspondingly, the shielding and isolation structure 14 may include a corresponding number of pumping units to evacuate the plasma reaction chambers.

[0054] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0055] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A shielding and isolation structure, characterized in that, The shielding and isolation structure is disposed in the exhaust channel of the multi-cavity plasma reactor and includes: A shielding vertical plate, made of metal, is arranged along the extension direction of the extraction channel to divide the extraction channel into multiple extraction units. Each extraction unit includes at least one extraction hole on its side wall. The extraction unit is connected to a corresponding plasma reaction chamber via the at least one extraction hole to extract air from the plasma reaction chamber. The mounting base, made of metal, is fixedly connected to the inner wall of the exhaust channel and is located at the bottom of the shielding vertical plate to support the shielding vertical plate. The mounting base has multiple air passage holes for each exhaust unit to exhaust air through the multiple air passage holes. The diameter of the air passage holes is determined according to the frequency of the driving radio frequency of the multi-cavity plasma reactor, and the diameter is smaller than the space required for the driving radio frequency to pass through.

2. The shielding and isolation structure as described in claim 1, characterized in that, The air extraction channel is connected to an external pipe via a mounting flange. The first inner diameter of the mounting flange is smaller than the second inner diameter of the air extraction channel to form a boss at the bottom of the air extraction channel. The mounting base is mounted on the boss to provide longitudinal support to the shielding vertical plate.

3. The shielding and isolation structure as described in claim 1 or 2, characterized in that, The contact portion between the shielding vertical plate and the side wall and / or top wall of the air extraction channel is provided with a first sealing gasket, and the contact portion between the mounting base and the side wall of the air extraction channel is provided with a second sealing gasket, so that the shielding isolation structure can be detachably installed in the air extraction channel and form the plurality of mutually isolated air extraction units.

4. The shielding and isolation structure as described in claim 3, characterized in that, The air extraction channel is grounded, and the first and / or the second sealing gasket is made of conductive rubber to form a grounded equipotential ring structure around the shielding and isolation structure.

5. The shielding and isolation structure as described in claim 1, characterized in that, The proportion of the multiple air vents on the mounting base is greater than 50%, forming a mesh-like air vent structure.

6. The shielding and isolation structure as described in claim 1, characterized in that, The plurality of air passages have equal air passage areas in each of the air extraction units, so that each of the air extraction units can uniformly exhaust air through the plurality of air passages.

7. A multi-cavity plasma reactor, characterized in that, include: Multiple plasma reaction chambers are used to perform plasma reactions separately; The exhaust channels are connected to each of the plasma reaction chambers and simultaneously exhaust air from each of the plasma reaction chambers. as well as The shielding and isolation structure according to any one of claims 1 to 6, wherein the shielding and isolation structure is disposed in the air extraction channel to divide the air extraction channel into a plurality of air extraction units, the air extraction channel includes at least one air extraction hole on the side wall of each air extraction unit, and the air extraction unit is connected to a corresponding plasma reaction chamber through the at least one air extraction hole to extract air from the plasma reaction chamber.

8. A semiconductor processing apparatus, characterized in that, Includes the multi-cavity plasma reactor as described in claim 7.

9. A semiconductor processing method, characterized in that, Includes the following steps: Plasma is established in multiple plasma reaction chambers of the multi-chamber plasma reactor as described in claim 7 to perform plasma processing on multiple wafers; as well as The multiple plasma reaction chambers are evacuated through the evacuation channel, which is equipped with a shielding and isolation structure, in the multi-chamber plasma reactor.

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