Vapor deposition precursor compounds and methods of use

Abstract

The present invention provides a plasma enhanced atomic layer deposition (PEALD) method for depositing etch resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatment containing O2 and NH3 co-reactants. This PEALD method relies on one or more precursors reacting in tandem with plasma exposure to deposit etch resistant films of SiOCN. Both after deposition and after post-deposition plasma treatment, the films exhibit excellent resistance to wet etching with dilute HF aqueous solution. Therefore, these films are expected to exhibit excellent stability to post-deposition manufacturing steps used during device manufacturing and construction.

Description

Technical Field

[0001] The present invention generally relates to materials and methods for depositing silicon oxycarbon nitride thin films onto microelectronic device surfaces. These films act as low dielectric constant insulators with excellent wet and dry etch resistance. Background Art

[0002] Silicon nitride (SiN) is used for source and drain spacers (S / D spacers) in FinFET and gate-all-around (GAA) structures due to its high wet etch resistance and O2 ashing resistance. Unfortunately, SiN has a high dielectric constant (k) of about 7.5. Carbon and nitrogen doped SiO2 (SiCON) spacers have been developed to reduce the dielectric constant and maintain excellent etch and ashing resistance. Currently, the best etch and ashing resistant SiCON dielectrics have a k value of about 4.0. Next generation devices require etch and ashing resistant dielectrics with a k value <3.5.

[0003] Additionally, there remains a need for improved organosilicon precursors for forming silicon-containing films in the fabrication of microelectronic devices, particularly in processes using low temperature vapor deposition techniques for forming silicon oxycarbonitride (SiOCN) films. In particular, there is a need for liquid silicon precursors having good thermal stability, high volatility, and reactivity with substrate surfaces.

[0004] Increasing device performance requires new materials to enhance the ability to both isolate transistors and interconnect circuits. These films generally require low dielectric constant properties (i.e., <4) while also withstanding subsequent processing steps during device fabrication, including wet etch resistance and dry etch resistance. In addition, the deposited insulator must not change when exposed to post-deposition processing. When these films are deposited in the front-end-of line, the film must conformally coat the 3D structure, as seen in FinFET devices, while demonstrating uniform dielectric properties across the structure. Since the film remains in the device, the electrical properties cannot change with post-deposition processing. Plasma-based deposition methods generally result in films with non-uniform electrical properties, where the top of the film is changed by enhanced plasma bombardment. At the same time, the sidewalls of 3D structures coated with the same film may exhibit different properties due to reduced electron bombardment during deposition. Nevertheless, the film must withstand wet etching and / or post-plasma processing in an oxidizing or reducing environment. Summary of the invention

[0005] The present invention provides a plasma enhanced atomic layer deposition (PEALD) method to deposit etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatment containing O2 and NH3 co-reactants. This PEALD method relies on one or more precursors reacting in series with plasma exposure to deposit etch-resistant films of SiOCN. Both after deposition and after post-deposition plasma treatment, the films exhibit excellent resistance to wet etching with dilute HF aqueous solutions. Therefore, it is expected that these films will exhibit excellent stability to post-deposition manufacturing steps used during device manufacturing and construction. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure may be more fully understood considering the following description of various exemplary embodiments in conjunction with the accompanying drawings.

[0007] Figure 1 ALD growth rates for SiCON films deposited by HEADS and TMORS are shown.

[0008] Figure 2 Wet etch rate measurements of films of SiOCN and thermal oxide (Tox) reference deposited by HEADS and DMDORS are depicted. The films were etched with a 100:1 dilute HF aqueous solution at room temperature as a function of time.

[0009] Figure 3 Ashing resistance of SiOCN films deposited by HEADS and DMDORS, and a silicon nitride (SiN) reference are depicted. Ashing resistance is a measurement of the difference in wet etch rate (100:1 dilute HF 60 seconds) before and after O2 plasma exposure at 100 W, 250 W, and 400 W for 60 seconds.

[0010] Although the present disclosure is susceptible to various modifications and alternative forms, its specific details have been shown by way of example in the drawings and will be described in detail. However, it should be understood that the present disclosure is not intended to limit the aspects of the present disclosure to the specific exemplary embodiments described. On the contrary, it is intended to cover all modifications, equivalents and alternatives that fall within the spirit and scope of the present disclosure. DETAILED DESCRIPTION

[0011] As used in this specification and the following claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. As used in this specification and the following claims, the term "or" is generally used in its sense including "and / or" unless the context clearly dictates otherwise.

[0012] The term "about" generally refers to a range of values ​​that are considered equivalent to the recited value (eg, having the same function or result). In many cases, the term "about" may include values ​​that are rounded to the nearest significant figure.

[0013] The recitation of numerical ranges using endpoints includes all numbers subsumed within that range (eg 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).

[0014] The following detailed description should be read with reference to the accompanying drawings, in which similar components in different drawings are numbered the same. The detailed description and the accompanying drawings (which are not necessarily to scale) depict exemplary embodiments and are not intended to limit the scope of the present disclosure. The depicted exemplary embodiments are intended to be exemplary only. Unless expressly provided to the contrary, selected features of any exemplary embodiment may be incorporated into another embodiment.

[0015] In a first aspect, the present invention provides a method of vapor depositing a silicon oxycarbonitride film onto a microelectronic device surface in a reaction zone, comprising sequentially introducing into the reaction zone reactants selected from the group consisting of: (i) at least one silylamine, (ii) at least one oxirane-based silane, wherein (i) and (ii) are introduced in either order, and (iii) a reducing gas in the form of a plasma, wherein each reactant is purged prior to exposing the film to the next reactant. In such aspects, the pulse sequence of such reactants may be:

[0016] a. silane amine; purge; ethylene oxide silane; purge; reducing gas in the form of plasma; purge; or

[0017] b. Oxiranylsilane; purge; silylamine; purge; reducing gas in the form of plasma; purge. In one embodiment, the reactants do not contain halogen atoms.

[0018] As used herein, the term "silicon oxycarbonitride" film refers to a film containing silicon, oxygen, carbon, and nitrogen in varying proportions. In one embodiment, the present disclosure provides a film having

[0019] (i) about 30 to 50 atomic percent silicon;

[0020] (ii) about 5 to 30 atomic percent nitrogen;

[0021] (iii) about 2 to 25 atomic percent carbon; and

[0022] (iv) about 20 to 40 atomic percent oxygen.

[0023] In another embodiment, the present disclosure provides a film having

[0024] (i) about 25 to 45 atomic percent silicon;

[0025] (ii) about 10 to 25 atomic percent nitrogen;

[0026] (iii) about 5 to 20 atomic percent carbon; and

[0027] (iv) about 25 to 35 atomic percent oxygen.

[0028] In certain embodiments, the silicon oxycarbonitride (SiCON) films of the present invention have about 15 to about 25 atomic percent nitrogen and in other embodiments, about 8 to about 12 atomic percent carbon.

[0029] In one embodiment, the term "silylamine" refers to a compound having one or two silicon-based groups and at least one secondary amine moiety. Examples of such silylamines include:

[0030]

[0031] and

[0032]

[0033] In one embodiment, the term "oxiranylsilane" refers to a silicon compound having at least one oxirane ring attached thereto, either directly or through an alkyl or alkoxy linking group. Examples of such compounds include

[0034]

[0035]

[0036] The following compound:

[0037]

[0038] wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; and

[0039] The following compound

[0040]

[0041] Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula

[0042]

[0043]

[0044] Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl; and

[0045]

[0046] Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl.

[0047] In formulas (VIII) and (X) above, when x is zero, the structure will be understood to depict an oxiranylsilane compound without the presence of a divalent oxygen atom; in other words, when x is zero, the structure will depict a silicon-silicon covalent bond.

[0048] In addition, examples of C1-C4 alkyl include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and tert-butyl. In one embodiment, C1-C4 alkyl is methyl.

[0049] In one embodiment, in the above formula (VIII), each R 1 is methyl; in another embodiment, each R 1 The following group

[0050]

[0051] In a second aspect, the present invention provides a method for depositing a silicon oxycarbon nitride film on a surface of a microelectronic device in a reaction zone under atomic layer deposition conditions, comprising sequentially introducing the following substances into the reaction zone:

[0052] a. A silane amine selected from the following:

[0053]

[0054] b. Then purging the reaction zone with an inert gas;

[0055] c. Then, an oxirane selected from the following is introduced into the reaction zone

[0056]

[0057]

[0058] The following compound:

[0059]

[0060] wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; and

[0061] The following compound

[0062]

[0063] Among them, each R 1Independently selected from C1-C4 alkyl groups or groups of the formula

[0064]

[0065] Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl; and

[0066]

[0067] Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl;

[0068] d. Then purging the reaction zone with an inert gas;

[0069] e. then introducing a reducing gas in the form of a plasma into the reaction zone;

[0070] f. Then purging the reaction zone with an inert gas; and

[0071] Repeat steps a. to f. until a film of desired thickness has been deposited.

[0072] In a third aspect, the present invention provides a method for depositing a silicon oxycarbon nitride film on a surface of a microelectronic device in a reaction zone under atomic layer deposition conditions, comprising sequentially introducing the following substances into the reaction zone:

[0073] a. Oxirane silane selected from the following

[0074]

[0075] The following compound:

[0076]

[0077] wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; and

[0078] The following compound

[0079]

[0080] Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula

[0081]

[0082] Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl; and

[0083] Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl;

[0084] b. Then purging the reaction zone with an inert gas;

[0085] c. Then introducing into the reaction zone a silane amine selected from the following:

[0086]

[0087] and

[0088]

[0089] d. Then purging the reaction zone with an inert gas;

[0090] e. then introducing a reducing gas in the form of a plasma into the reaction zone;

[0091] f. Then purging the reaction zone with an inert gas; and

[0092] Repeat steps a. to f. until a film of desired thickness has been deposited.

[0093] In a fourth aspect, the present invention provides a compound of the formula

[0094]

[0095] wherein each R is a methyl group.

[0096] In a fifth aspect, the present invention provides a compound of the formula

[0097] in

[0098] (i) Each R 2 The following group

[0099] or

[0100] (ii) One of the R 2 is hydrogen and the other R 2 The following group

[0101]

[0102] The compounds of the fourth and fifth aspects can be used as precursors in vapor deposited silicon to form silicon-containing films.

[0103] Generally speaking, the silylamines of the present invention can be prepared from the corresponding silicon halide compounds and the appropriate amines. See, for example, U.S. Pat. No. 7,022,864, which is incorporated by reference.

[0104] Generally speaking, compounds of formula (VIII) and (X) can be prepared according to the following reaction scheme for synthesizing compounds of formula (VIII):

[0105]

[0106] Generally speaking, compounds of formula (VIII) wherein x is zero can be prepared by reacting a chlorosilane with 1,2-epoxy-3-propanol in the presence of triethylamine to give the corresponding silyl ether.

[0107] The synthesis of compounds of formula IV, V and VI can be prepared according to the procedures described by Borovik et al. in Borovik, A.; Xu, C.; Baum, T.; Bilodeau, S.; Roeder, J.; Ebbing, A.; Vestyck, D., Ethyleneoxide-Silane and Bridged Silane Precursors for Forming Low K Films. (See also U.S. Pat. No. 7,022,864, incorporated herein by reference.) The synthesis of compounds of Formula VI and other glycidyloxysilyl esters of Formula VIII can be carried out as described in detail in Martin, RW, Epoxy-Substituted Esters of Silicon Acids and Their Preparation. (See also U.S. Pat. No. 2,730,532, incorporated herein by reference.) Synthetic silylamines and aminodisilanes of formula (I), (II) and (III) can be prepared by the method described in Wang, Z.; Chen, X.; Hendrix, B.; Rod Jody; Chen, T.; Baum, TH, “Composition and Method for Low Temperature Chemical Vapor Deposition of Silicon-Containing Films Including Silicon Carbonitride and Silicon Oxycarbonitride Films”, U.S. Pat. No. 9,102,693, incorporated herein by reference.

[0108] The compound of formula (XI) can be prepared according to the following reaction scheme:

[0109]

[0110] In one embodiment, the vapor deposition conditions include a temperature of about 250°C to about 400°C and a pressure of about 1 to about 20 Torr or about 1 to 10 Torr. In another embodiment, the vapor deposition conditions include a temperature of about 300°C to about 350°C.

[0111] The above compounds can be used to form high purity silicon-containing films by any suitable ALD technique and pulsed plasma method. Such vapor deposition methods can be used to form silicon-containing films on microelectronic devices by forming films having a thickness of about 20 angstroms to about 200 angstroms using a deposition temperature of about 350° C. to about 550° C.

[0112] The above methods and compounds of the present invention may be reacted with the desired microelectronic device substrate in any suitable manner, such as in a single wafer chamber, or in a furnace that accommodates multiple wafers.

[0113] Alternatively, the method of the present invention can be performed as an ALD-like method. As used herein, the term "ALD or ALD-like" refers to a method in which each reactant is introduced sequentially into a reactor (such as a single wafer ALD reactor, a semi-batch ALD reactor, or a batch furnace ALD reactor), or each reactant is exposed to the substrate or microelectronic device surface by moving or rotating the substrate to different sections of the reactor and each section is separated by an inert gas curtain (i.e., a spatial ALD reactor or a roll-to-roll ALD reactor).

[0114] In one embodiment, the present invention is directed to a plasma enhanced atomic layer deposition method (PEALD) for depositing silicon oxycarbonitride films using silylamines and oxiranylsilanes as described herein along with a reducing gas in the form of a plasma. Nitrogen plasma can be used to form films with a higher nitrogen atomic percentage while using silylamines and oxiranylsilanes as taught herein and a reducing gas in the form of a plasma.

[0115] As used herein, the term "reducing gas in the form of plasma" means that the reducing gas in the form of plasma comprises a gas selected from hydrogen (H2), hydrazine (N2H4); C1-C4 alkylhydrazine, such as methylhydrazine, tert-butylhydrazine, 1,1-dimethylhydrazine and 1,2-dimethylhydrazine, which is used in combination with a plasma formed by an inert gas (such as N2, He or Ar) alone or in combination with H2. For example, when starting R f A continuous flow of an inert gas (such as argon) is used during the field, followed by the start of hydrogen to provide plasma H2. Typically, the plasma power used ranges from about 50 to 500 watts at 13.6 Hz.

[0116] In certain embodiments, the pulse time (i.e., duration of exposure to the substrate) of the reactants described above (i.e., silylamine, oxiranylsilane, and reducing gas in plasma form) ranges between about 1 second and 10 seconds. When a purge step is used, the duration is about 1 second to 10 seconds or 2 seconds to 5 seconds. In other embodiments, the pulse time of each reactant ranges from about 2 seconds to about 5 seconds.

[0117] The methods disclosed herein involve one or more purge gases. The purge gas, which is used to purge away unconsumed reactants and / or reaction byproducts, is an inert gas that does not react with the precursor. Exemplary purge gases include, but are not limited to, argon, nitrogen, helium, neon, hydrogen, and mixtures thereof. In certain embodiments, a purge gas (such as Ar) is supplied to the reactor at a flow rate ranging from 10 to about 2000 sccm for about 0.1 to 1000 seconds, thereby purging unreacted materials and any byproducts that may remain in the reactor.

[0118] The various steps of supplying silylamine and oxiranylsilane compounds, reducing gas in plasma form, and / or other precursors, source gases, and / or reagents may be performed by changing the order in which they are supplied and / or changing the stoichiometric composition of the resulting dielectric film.

[0119] In the method of the present invention, energy is applied to various reactants to initiate a reaction and form a silicon oxycarbon nitride film on a microelectronic device substrate. Such energy may be provided by, but is not limited to, heat, pulsed heat, plasma, pulsed plasma, high density plasma, inductively coupled plasma, remote plasma methods, and combinations thereof. In certain embodiments, a secondary RF frequency source may be used to modify the plasma characteristics at the substrate surface. In embodiments where deposition involves plasma, the plasma generation method may include a direct plasma generation method where the plasma is generated directly in the reactor, or alternatively, a remote plasma generation method where the plasma is generated "remotely" from the reaction zone and substrate and supplied to the reactor.

[0120] As used herein, the term "microelectronic device" corresponds to a semiconductor substrate, including 3D NAND structures, flat panel displays, and microelectromechanical systems (MEMS) fabricated for use in microelectronics, integrated circuits, or computer chip applications. It should be understood that the term "microelectronic device" is not intended to be limiting in any way and includes any substrate that includes negative channel metal oxide semiconductor (nMOS) and / or positive channel metal oxide semiconductor (pMOS) transistors and will eventually become a microelectronic device or microelectronic assembly. Such a microelectronic device contains at least one substrate that can be selected from, for example, silicon, SiO2, Si3N4, OSG, FSG, silicon carbide, hydrogenated silicon carbide, silicon nitride, hydrogenated silicon nitride, silicon carbonitride, hydrogenated silicon carbonitride, boron nitride, anti-reflective coating, photoresist, germanium, germanium-containing, boron-containing, Ga / As, flexible substrates, porous inorganic materials, metals (such as copper and aluminum), and diffusion barriers such as, but not limited to, TiN, Ti(C)N, TaN, Ta(C)N, Ta, W, or WN. The films are compatible with a variety of subsequent processing steps such as, for example, chemical mechanical planarization (CMP) and anisotropic etching methods.

[0121] These films provide low etch resistance to wet etchants and O2 plasma. The O2 plasma ashing process was performed at 340°C and 3 Torr pressure with 500 sccm O2 flow rate and plasma powers of 100, 250, and 400 W for 1 minute. In this regard, reference Figure 3 In another aspect, the present invention provides a silicon oxycarbon nitride film that exhibits an ashing damage differential of only about 4 angstroms over a silicon nitride reference sample when exposed to an oxygen plasma at 100 watts for 60 seconds. In another embodiment, the present disclosure provides a microelectronic device having a silicon oxycarbon nitride film deposited thereon that exhibits an ashing damage differential of only about 4 angstroms over a silicon nitride reference sample when exposed to an oxygen plasma at 100 watts for 60 seconds.

[0122] As noted above, in certain embodiments, the silicon oxycarbonitride (SiCON) films of the present invention have about 15 to about 25 atomic percent nitrogen and about 12 atomic percent carbon. Using the methods of the present invention, such SiCON films can be prepared having a dielectric constant (k) of less than about 3.5. In other embodiments, such SiCON films have a dielectric constant of about 2.5 to about 4.0.

[0123] Generally speaking, the desired thickness of the SiCON film thus prepared is about To date

[0124] Doping low-k SiCO films with nitrogen via the interaction between silylamine and oxirane-based silane precursors and subsequent reaction with H2 plasma significantly improves the wet etch and O2 plasma ashing resistance of the resulting SiCON films.

[0125] In the methods of the present invention, the delivery rate for oxiranyl silanes may be about 10 to 100 mg / PEALD cycle and for silyl amines, about 5 to 50 mg / PEALD cycle.

[0126] The present invention may be further illustrated by the following examples of certain embodiments thereof, although it should be understood that these examples are included for illustrative purposes only and are not intended to limit the scope of the invention unless expressly stated otherwise.

[0127] Examples

[0128] Example 1

[0129] Synthesis of bis(glycidyloxy)tetramethyldisilane (VIII, where x=0 and R=CH3)

[0130] Triethylamine (3.21 g, 31.8 mmol) and (oxirane-2-yl)methanol (1.62 g, 21.7 mmol) were added to a 100 mL round bottom flask and then diluted with hexane (20 mL). The container was fitted with a rubber septum and transferred out of the glove box. A PTFE-coated thermocouple was inserted through the septum and the turbid solution was cooled to -11 ° C with a salt water bath. A solution of 1,2-dichloro-1,1,2,2-tetramethyldisilane (2.00 g, 10.6 mmol) in 10 mL of anhydrous hexane was added dropwise via a syringe over 12 minutes. A slight exotherm was noted and a thick white precipitate was formed. The reaction mixture was allowed to stir at 0 ° C for 2.5 hours and then warmed to ambient temperature. The reaction mixture was filtered through a 10 micron filter and the solvent of the resulting solution was stripped at 40 torr and ambient temperature. A thick colorless oil with precipitation was obtained. The reaction mixture was kept under vacuum for 3 hours to allow complete removal of triethylamine. The residue was then dissolved in minimal pentane and filtered through a 0.4 micron syringe filter. The pentane was then removed under vacuum (40 Torr). The cloudy colorless oil was distilled under vacuum (0.100 to 0.200 Torr) to give two fractions with a combined yield of 44% (95% pure diastereoisomer mixture, by 1 1H NMR). 1 H NMR (C6D6): δ3.87-3.71(ddd,2H), 3.61-3.45(ddd,2H), 3.02-2.96(m,2H), 2.67-2.64(dd,2H), 2.54-2.49(dd,2H), 0.15(s,12H), 0.06(s,12H).

[0131] PEALD SiCON deposition uses improved The deposition was carried out using a PEALD system with a susceptor temperature of 400°C, a showerhead temperature of 170°C, a chamber pressure of 3 Torr, and an ambient inert gas flow rate of 500 sccm. The coupon temperature during deposition was about 340°C.

[0132] The hydrogen plasma is generated using a direct plasma system that generates the plasma between the showerhead and the susceptor / wafer. The plasma power ranges from 150 to 500 W. The plasma pulse time ranges from 5 to 45 seconds.

[0133] SiCON's PEALD pulse solution consists of the following:

[0134] 1. Silane amine pulse (1 to 5 seconds)

[0135] 2. Inert gas purge (10 seconds)

[0136] 3. Pulse of ethylene oxide silane or vinyl silane (1 to 10 seconds)

[0137] 4. Inert gas purge (10 seconds)

[0138] 5. H2 plasma pulse (5 to 45 seconds)

[0139] 6. Inert gas purge (5 to 10 seconds)

[0140] As can be seen from the following data, nitrogen doping significantly improves the etching resistance and ashing resistance of SiCON films and makes it possible to achieve a dielectric constant of <3.5 in SiCON films.

[0141]

[0142] *Atomic Percent

[0143] Note: The HEADS precursor provides approximately 15 to 25 atomic percent nitrogen doping to the SiCON film.

[0144]

[0145] legend:

[0146] HEADS = Hexa(ethylamino)disilane

[0147] DMDORS = dimethyl dioxirane

[0148] TMORS = Trimethyloloxysilane

[0149] DEOMORS = Diethoxymethyl oxiranyl silane

[0150] Having thus described several exemplary embodiments of the present disclosure, those skilled in the art will readily appreciate that still other embodiments may be made and used within the scope of the claims appended hereto. Many advantages of the present disclosure covered by this document have been set forth in the foregoing description. However, it should be understood that the present disclosure is in many respects merely exemplary. Detailed changes may be made without exceeding the scope of the present disclosure. The scope of the present disclosure is of course defined in the language in which the appended claims are expressed.

Claims

1. A method of vapor depositing a silicon oxycarbonitride film onto a microelectronic device surface in a reaction zone, comprising sequentially introducing into the reaction zone reactants selected from the group consisting of: (i) at least one silylamine, (ii) at least one oxiranylsilane, wherein (i) and (ii) are introduced in either order, and (iii) a reducing gas in the form of a plasma, wherein each reactant is purged before exposing the film to the next reactant, wherein the silylamine has two silicon atoms per molecule, and wherein the oxiranylsilane is selected from the group consisting of The following compound: wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; The following compound Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl and x is zero; and Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl.

2. The method according to claim 1, wherein the silane amine is selected from 3. The method according to claim 2, wherein the oxiranyl silane is 4. The method according to claim 2, wherein the oxiranyl silane is selected from the following compounds: wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1.

5. The method according to claim 2, wherein the oxiranyl silane is selected from the following compounds Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula 6. The method according to claim 2, wherein the oxiranyl silane is selected from Among them, each R 3 Independently selected from hydrogen or C1-C4 alkyl.

7. The method according to claim 2, wherein the oxiranyl silane compound is selected from Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl.

8. A method for depositing a silicon oxycarbon nitride film on a surface of a microelectronic device in a reaction zone under atomic layer deposition conditions, comprising sequentially introducing the following substances into the reaction zone: a. A silane amine selected from the following: b. Then purging the reaction zone with an inert gas; c. Then, an oxirane selected from the following is introduced into the reaction zone The following compound: wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; and The following compound Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl and x is zero; and Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl; d. Then purging the reaction zone with an inert gas; e. then introducing a reducing gas in the form of a plasma into the reaction zone; f. Then purging the reaction zone with an inert gas; and Repeat steps a. to f. until a film of desired thickness has been deposited.

9. A method for depositing a silicon oxycarbon nitride film on a surface of a microelectronic device in a reaction zone under atomic layer deposition conditions, comprising sequentially introducing the following substances into the reaction zone: a. Oxirane silane selected from the following The following compound: wherein each R is independently selected from C1-C4 alkyl, and x is zero or 1; and The following compound Among them, each R 1 Independently selected from C1-C4 alkyl groups or groups of the formula Among them, each R 3 are independently selected from hydrogen or C1-C4 alkyl and x is zero; and Among them, each R 2 Independently selected from hydrogen or C1-C4 alkyl; b. Then purging the reaction zone with an inert gas; c. Then introducing into the reaction zone a silane amine selected from the following: d. Then purging the reaction zone with an inert gas; e. then introducing a reducing gas in the form of a plasma into the reaction zone; f. Then purging the reaction zone with an inert gas; and Repeat steps a. to f. until a film of desired thickness has been deposited.

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