A method for polishing the end face of a crystal

Abstract

This application provides a method for polishing the end face of a crystal, comprising: arranging and bonding multiple crystals in an array along the length and / or width direction of the crystal to form a crystal block; placing the crystal block in the working hole of a planetary wheel; and placing the planetary wheel in a polishing machine to grind and polish the crystal block to a preset height. In this application, because the cross-sectional area of ​​a single crystal to be processed is too small and its center of gravity is high, and there is a gap between the crystal and the working hole, the crystal is prone to tilting during polishing, resulting in a large polishing accuracy error. By arranging and bonding multiple crystals in an array along the length or width direction of the crystal to form a crystal block with a larger cross-sectional area, it is easier to fit with the working hole, less prone to tilting, and improves polishing accuracy. At the same time, each working hole of the planetary wheel accommodates multiple crystals, increasing polishing efficiency.

Description

Technical Field

[0001] This application relates to the field of crystal processing technology, and in particular to a method for polishing the end face of a crystal. Background Technology

[0002] Among the relevant crystal polishing methods, single-sided processing and double-sided processing are the main methods. The crystal to be processed is placed in the working hole of the planetary wheel and rotates and revolves synchronously with the planetary wheel, thereby grinding and polishing the crystal.

[0003] In related technologies, some crystals have very small cross-sections, and there is an error gap between the crystal and the working hole of the planetary gear. When the cross-section of the crystal is very small, the crystal will tilt relative to the working table of the polishing machine during the polishing process. This will cause a relatively large deviation in the light transmission direction angle of the crystal, thus affecting the crystal performance. Summary of the Invention

[0004] The purpose of this application is to provide a method for polishing the end face of a crystal to improve the polishing accuracy. The specific technical solution is as follows:

[0005] This application proposes a method for polishing the end face of a crystal, including:

[0006] Multiple crystals are arranged in an array along the length and / or width of the crystals and bonded together to form a crystal block;

[0007] Place the crystal assembly into the working hole of the planetary wheel;

[0008] The planetary wheel is placed in a grinding and polishing machine to grind and polish the crystal block to a preset height.

[0009] In some embodiments of this application, the planetary wheel includes at least one of the working holes, which are symmetrically distributed along the axis of symmetry of the planetary wheel's center.

[0010] In some embodiments of this application, the working hole is rectangular, with a length of 30mm-45mm and a width of 30mm-45mm.

[0011] In some embodiments of this application, before arranging and bonding multiple crystals along the length and / or width of the crystals to form the crystal block, the following steps are included: detecting the positive and negative deviations of the diffraction angles of the unprocessed surfaces of the crystals, and arranging the crystals with the same positive diffraction deviations of the same crystal surface in the same direction to form the crystal block, or arranging the crystals with the same negative diffraction deviations of the same crystal surface in the same direction to form the crystal block.

[0012] In some embodiments of this application, the step of bonding multiple crystals to form the crystal assembly includes:

[0013] An adhesive is provided, the crystal assembly is held using a clamp, the adhesive is placed on the crystal assembly, the adhesive flows into the gaps between the crystals, the crystal assembly is clamped using the clamp, and excess adhesive is squeezed out.

[0014] After the adhesive has solidified, the clamp is removed.

[0015] In some embodiments of this application, the clamp includes a first bracket and a second bracket that are detachably connected. The first bracket and the second bracket are L-shaped and are used to move towards each other along the diagonal direction of the crystal assembly to clamp the crystal assembly.

[0016] In some embodiments of this application, the adhesive is paraffin wax.

[0017] In some embodiments of this application, the thickness of the planetary wheel is 5mm-20mm.

[0018] In some embodiments of this application, after the step of placing the planetary wheel into a polishing machine to grind and polish the crystal assembly, the polishing method further includes: removing the binder and separating the crystal assembly into the crystals.

[0019] In some embodiments of this application, after the step of separating the crystal assembly into the crystal, the polishing method further includes: cleaning the crystal with an organic solvent. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0021] Figure 1 This is a schematic diagram illustrating the working principle of crystal assembly grinding and polishing in an embodiment of this application.

[0022] Figure 2 This is a flowchart illustrating a process of grinding and polishing crystal blocks according to an embodiment of this application.

[0023] Figure 3 This is another flowchart illustrating the grinding and polishing process of crystal blocks according to an embodiment of this application;

[0024] Figure 4 This is a schematic diagram of the first and second bracket structures in an embodiment of this application;

[0025] Figure 5 This is an example optical path diagram for crystal diffraction angle detection according to an embodiment of this application;

[0026] Figure 6 This is another example optical path diagram for crystal diffraction angle detection in the embodiments of this application;

[0027] Figure 7 This is a schematic diagram of the crystal block arrangement in an embodiment of this application.

[0028] The attached figures are labeled as follows:

[0029] Crystal 100, crystal assembly 200, planetary wheel 300, working hole 310, first support 500, second support 600. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0031] like Figure 1 and Figure 2 As shown, this application proposes a method for polishing the end face of a crystal, comprising the following steps:

[0032] S1. Arrange multiple crystals 100 in an array along the length and / or width of the crystals 100 and bond them together to form a crystal block 200.

[0033] S2. Place the crystal assembly 200 into the working hole 310 of the planetary wheel 300.

[0034] S3. Place the planetary wheel 300 into the polishing machine to grind and polish the crystal block 200 to the preset height.

[0035] In this embodiment, because the cross-sectional area of ​​a single crystal 100 is too small and a gap is generated between the crystal 100 and the working hole 310, the crystal 100 is prone to tilting during the polishing process, resulting in a large polishing accuracy error. By arranging and bonding multiple crystals 100 in an array along the length or width direction of the crystal 100, a crystal block 200 with a larger cross-sectional area is formed, which is convenient to fit with the working hole 310, is less prone to tilting, and improves polishing accuracy. At the same time, each working hole 310 of the planetary wheel 300 accommodates multiple crystals 100, which increases polishing efficiency.

[0036] like Figure 1As shown, in some embodiments, the planetary wheel 300 includes at least one working hole 310, which is symmetrically distributed along the axis of symmetry of the center of the planetary wheel 300.

[0037] In this embodiment, the planetary wheel 300 includes one or more working holes 310. When the planetary wheel 300 includes only one working hole 310, the working hole 310 is located at the center of the planetary wheel 300. When the planetary wheel 300 includes multiple working holes 310, the working holes 310 are symmetrically distributed around the center of the planetary wheel 300. In this way, when the crystal assembly 200 is installed in the planetary wheel 300, the weight balance of the planetary wheel 300 can be ensured, preventing tilting during the rotation and polishing process of the planetary wheel 300.

[0038] like Figure 1 As shown, in some embodiments, the working hole 310 is rectangular, with a length of 30mm-45mm and a width of 30mm-45mm.

[0039] In this embodiment, the length and width of the working hole 310 are preferably in the range of 30mm-45mm, specifically determined according to the size of the crystal assembly 200. When the length and width of the working hole 310 are less than 30mm, the length and width of the crystal assembly 200 that can be accommodated are less than 30mm, and the number of crystals 100 accommodated in each working hole 310 is relatively small, resulting in low grinding and polishing efficiency. When the length and width of the working hole 310 are greater than 45mm, the length and width of the crystal assembly 200 that can be accommodated are greater than 45mm, which will result in a larger number of crystals 100 bonded together within a single crystal assembly 200. When the crystals 100 are bonded together to form a crystal assembly 200, the operation is more complex, and an adhesive with strong adhesion is required.

[0040] like Figure 3 As shown, in some embodiments, based on Figure 2 In the embodiment shown, before step S1, which involves arranging and bonding multiple crystals 100 along the length and / or width of the crystals 100 to form a crystal block 200, step S0 is further included: detecting the positive and negative deviations of the diffraction angles of the unprocessed surfaces of the crystals 100, and arranging the crystals 100 in the same direction with the positive diffraction deviations of the same crystal surface to form the crystal block 200, or arranging the crystals 100 in the same direction with the negative diffraction deviations of the same crystal surface to form the crystal block 200.

[0041] In this embodiment, as Figures 5 to 6As shown, when arranging crystals 100, the diffraction angle of the unprocessed surface of crystal 100 is first detected by an X-ray diffractometer to detect the positive and negative deviations of the diffraction angle of the unprocessed surface of crystal 100 to be polished. Crystals 100 are arranged in the same direction with the positive diffraction deviation of the same crystal plane to form crystal block 200, or crystals 100 are arranged in the same direction with the negative diffraction deviation of the same crystal plane to form crystal block 200, so as to reduce the accumulated error of the diffraction angle of crystal 100 and improve the polishing accuracy. Figures 5 to 6 In the middle, d hkl denoted as the interplanar spacing, where Figure 5 The image shows that the crystal surface and crystal plane are completely aligned, with no angular deviation. Figure 6 The image shows a tilted crystal surface, resulting in an angular deviation from the crystal plane.

[0042] Crystal structures exhibit long-range order, thus their crystal orientations can be characterized using X-rays. Their theoretical crystal orientations satisfy the X-ray diffraction enhancement condition, namely the Bragg equation:

[0043] 2dsinθ=nλ

[0044] Where: d—interplanar spacing, θ—diffraction angle, λ—X-ray wavelength, n—diffraction order

[0045] The deviation between the macroscopic crystal surface and the microscopic crystal plane is called diffraction deviation. This deviation will inevitably exist in the actual testing process. The diffraction deviation where the macroscopic surface protrudes from the microscopic crystal plane is recorded as positive deviation, and the opposite is recorded as negative deviation.

[0046] Specifically, the arrangement of crystal 100 is as follows: Figure 7 As shown, crystal blocks 200 are formed by alternating the side of the same crystal plane of crystal 100 with a positive diffraction angle and the side of the same crystal plane of another crystal 100 with a negative diffraction angle. That is, the positive diffraction deviation side of crystal 100 faces the left and the negative diffraction deviation side of crystal 100 faces the right, so as to reduce the accumulated error of diffraction angle of crystal 100.

[0047] In some embodiments, the step of bonding multiple crystals 100 together to form a crystal assembly 200 may specifically include:

[0048] Provide adhesive, use a clamp to hold the crystal assembly 200, place the adhesive on the crystal assembly 200, the adhesive flows into the gap between the crystals 100, use the clamp to tighten the crystal assembly 200, and squeeze out the excess adhesive.

[0049] After the adhesive has solidified, remove the clamps.

[0050] In this embodiment, after the crystals 100 are arranged, the crystal assembly 200 is clamped with a jig, and the adhesive is placed on the crystal assembly 200 so that the adhesive flows into the gaps between the crystals 100. The crystal assembly 200 is clamped with the jig to squeeze out the excess adhesive between the crystals 100, thereby reducing the gaps between the crystals 100 and preventing the crystals 100 from tilting due to the presence of adhesive, which would affect the grinding and polishing accuracy.

[0051] like Figure 4 As shown, in some embodiments, the clamp includes a detachably connected first bracket 500 and a second bracket 600, the first bracket 500 and the second bracket 600 being L-shaped, the first bracket 500 and the second bracket 600 being used to move towards each other in a diagonal direction along the crystal assembly 200 to clamp the crystal assembly 200.

[0052] In this embodiment, the first support 500 includes two arms at a 90° angle, and the second support 600 includes two arms at a 90° angle. The first support 500 and the second support 600 move towards each other along the diagonal direction of the crystal assembly 200 until they clamp the crystal assembly 200. By using the first support 500 and the second support 600 to clamp the crystal assembly 200, the crystal assembly 200 is ensured to be neatly arranged.

[0053] In some embodiments, the binder is paraffin wax.

[0054] In this embodiment, paraffin wax with a melting temperature of 50-70℃ can be selected. The crystal assembly 200 is placed on a flat plate, and the paraffin wax is placed on top of the crystal assembly 200. The flat plate is heated to 70-90℃, and the heat is transferred to the crystal assembly 200 and the paraffin wax. The paraffin wax melts and flows into the gaps of the crystal assembly 200. After heating is stopped, the paraffin wax on the crystal assembly 200 solidifies, completing the bonding of the crystal assembly 200. The low melting temperature of the paraffin wax will not damage the crystal 100 during use.

[0055] like Figure 1 As shown, in some embodiments, the thickness of the planetary wheel 300 is 5mm-20mm.

[0056] In this embodiment, the thickness of the planetary wheel 300 is selected according to the height of the crystal assembly 200. When the thickness of the planetary wheel 300 is less than 5mm, the planetary wheel 300 is too thin, and the contact area between the planetary wheel 300 and the crystal assembly 200 is small. During the grinding and polishing process, the crystal assembly 200 is prone to tilting. In addition, if the planetary wheel 300 is too thin, it will have low strength and be prone to deformation.

[0057] Specifically, the thickness H of the planetary wheel 300 and the height h of the crystal assembly 200 satisfy h / 2 ≤ H ≤ 3h / 4. For example, if the height of the crystal to be processed is 25mm, the thickness of the planetary wheel can be 15mm. If the height of the crystal assembly 200 to be processed is 10mm, the thickness of the planetary wheel can be 7mm.

[0058] In some embodiments, after the step of grinding and polishing the crystal assembly 200 by placing the planetary wheel 300 in a grinding and polishing machine, the grinding and polishing method further includes:

[0059] Remove the binder and separate the crystal assembly 200 into crystal 100.

[0060] In this embodiment, the method for removing the adhesive is selected according to the type of adhesive used, including removing the adhesive by heating or using a solvent, and separating the crystal assembly 200 into crystals 100.

[0061] When paraffin is used as the binder, it is melted by heating and the crystals are separated by 100.

[0062] In some embodiments, after the step of separating the crystal assembly 200 into crystals 100, the polishing method further includes:

[0063] Clean crystal 100 with an organic solvent.

[0064] In this embodiment, after the crystal 100 is ground and polished, organic solvents are used to clean organic residues and other impurities.

[0065] The following three specific examples illustrate the proposed solution in detail:

[0066] Example 1:

[0067] The crystal to be processed, 100, is a quartz crystal. The geometric dimensions of crystal 100 are l = 10 mm, w = 5 mm, and h = 25.3 mm, where l is the crystal length, w is the crystal width, and h is the crystal height. The polished surface is a 10 mm × 5 mm crystal plane. The side diffraction angle deviations are x ± 5′ and y ± 5′, and the positive and negative deviations of the diffraction angles are marked.

[0068] The planetary wheel 300 was designed and prepared using a domestically produced 9B double-sided polishing machine, with a maximum processing height of 40mm. The planetary wheel 300 has a diameter of Φ225mm. Each set contains 5 planetary wheels, and each planetary wheel is designed with 8 working holes 310, with an inner diameter of 40.5mm × 40.5mm. The planetary wheel thickness H = 15mm.

[0069] The crystals 100 are arranged in four rows along their length and eight columns along their width on the upper surface of the heating plate, vertically within the area formed by the heating plate and the horizontally placed first support 500 and second support 600. During the arrangement of the crystals 100, each row and each column are arranged according to the positive and negative diffraction deviations to reduce the cumulative error of diffraction deviations.

[0070] Heat bonding. The heating plate temperature is 90℃, and the crystal 100, the first support 500, and the second support 600 are preheated simultaneously. Paraffin wax is applied to the top of the quartz crystal 100. After the paraffin wax melts due to the heat, it flows into the gaps between the crystals 100. The first support 500 and the second support 600 are pushed horizontally to clamp the crystal 100, and the excess paraffin wax is squeezed out. The quartz crystal block 200 workpiece is now complete.

[0071] After cooling, gently tap the heating plate, the first support 500 and the second support 600 with a rubber hammer, and take out the glued quartz crystal block 200. At this time, the geometric dimensions of the quartz crystal block 200 workpiece are 40mm×40mm×25.3mm, and each quartz crystal block 200 is composed of 32 crystals 100.

[0072] Place the planetary wheel 300 on the grinding disc of the double-sided polishing machine, place the quartz crystal block 200 in the working hole 310 of the planetary wheel 300, prepare the grinding slurry, and set the parameters such as grinding pressure, grinding disc speed, and grinding slurry flow rate to grind the crystal block 200 to 25.1+0.01mm.

[0073] Place the planetary wheel 300 on the polishing disc of the double-sided polishing machine, and place the quartz crystal block 200 in the working hole 310 of the planetary wheel 300. Prepare the polishing fluid, and set the parameters such as polishing pressure, polishing disc speed, and polishing fluid flow rate. Polish the quartz crystal block 200 to 25±0.01mm. After the surface quality is inspected, the polishing is completed.

[0074] The crystal assembly 200 is placed on a heating plate and heated to 70°C to melt the paraffin. The crystal assembly 200 is then disassembled into crystal 100 and cleaned with an organic solvent.

[0075] In this example, the material bonding and cooling time totaled 2 hours, grinding time was 30 minutes, and polishing time was 4 hours. A single batch processed 1280 pieces, with 8 pieces failing, resulting in a failure rate of 0.625%, meeting the requirements for mass production of crystal components. Finished product inspection results: Crystal 100 height h = 25 ± 0.01 mm, polished surface angle deviation z ± 3′, surface shape deviation λ / 4 @ 632.8 nm, surface scratches and pits number S / D = 20 / 10, and chipped edge size ≤ 0.2 mm.

[0076] Example 2:

[0077] The crystal to be processed, 100, is potassium titanium phosphate (KTP) crystal 100. The geometric dimensions of crystal 100 are l = 3 mm, w = 3 mm, and h = 10.5 mm, where l is the crystal length, w is the crystal width, and h is the crystal height. The polished surface is a 3 mm × 3 mm crystal plane. The side diffraction angle deviation is ±3′; the positive and negative deviations of the diffraction angle are indicated.

[0078] Design and preparation of planetary wheel 300. A domestically produced 6B double-sided polishing machine is used, with a maximum processing height of 35mm. The diameter of planetary wheel 300 is Φ150mm. Each set of planetary wheels 300 consists of 5 units, each with 5 working holes (310) with an inner diameter of 30.5mm × 30.5mm. The thickness of planetary wheel 300 is H = 7mm.

[0079] Crystals 100 are arranged in 10 rows along their length and 10 columns along their width on the upper surface of the heating plate, forming a crystal assembly 200. The crystal assembly 200 is vertically positioned within the area formed by the heating plate and the horizontally placed first support 500 and second support 600. When arranging the crystals 100, each row is arranged with adjacent diffraction deviations (positive and negative), and each column is arranged with adjacent diffraction deviations (positive and negative) to reduce the cumulative error of diffraction deviations.

[0080] Heat bonding. The heating plate temperature is 70℃, and the crystal 100, the first support 500 and the second support 600 are preheated simultaneously. Paraffin wax is applied to the KTP crystal assembly 200. After the paraffin wax melts due to the heat, it flows into the gaps between the crystals 100. The first support 500 and the second support 600 are pushed horizontally to clamp the crystal assembly 200, and the excess paraffin wax is squeezed out.

[0081] After cooling down, gently tap the heating plate, the first support 500 and the second support 600 with a rubber hammer, and take out the glued KTP crystal block 200. At this time, the geometric dimensions of the KTP crystal block 200 are 30mm×30mm×10.5mm, and each crystal block 200 is composed of 100 crystals 100.

[0082] Grinding. Place the planetary wheel 300 on the grinding disc of the double-sided polishing machine, place the crystal block 200 in the working hole 310 of the planetary wheel 300, prepare the grinding slurry, and set the parameters such as grinding pressure, grinding disc speed, and grinding slurry flow rate to grind the crystal block 200 to 10.1 + 0.01 mm.

[0083] Polishing. Place the planetary wheel 300 on the polishing disc of the double-sided polishing machine, place the crystal block 200 in the working hole 310 of the planetary wheel 300, prepare the polishing fluid, and set the parameters such as polishing pressure, polishing disc speed, and polishing fluid flow rate. Polish the crystal block 200 to 10±0.01mm. After the surface quality is inspected, polishing is completed.

[0084] Cleaning. Place the crystal assembly 200 on a heated plate and heat it to 70°C to melt the paraffin. Disassemble the crystal assembly 200 into crystal 100 and clean it with an organic solvent.

[0085] In this embodiment, the material adhesion and cooling time is 1.5 hours, the grinding time is 15 minutes, the polishing time is 4 hours, the batch processing quantity is 2500 pieces, the number of defective pieces is 13 pieces, the defect rate is 0.52%, which meets the batch manufacturing requirements of Crystal 100 components. Finished product inspection results: Crystal 100 height h = 10 ± 0.01 mm, polished surface angle deviation z ± 3′, surface shape deviation λ / 2 @ 632.8 nm, surface scratches and pits number S / D = 40 / 20, chipped edge size ≤ 0.2 mm.

[0086] Example 3:

[0087] The material to be processed, crystal 100, is magnesium fluoride crystal. The geometric dimensions of crystal 100 are l = 30 mm, w = 2 mm, and h = 26 mm, where l is the crystal length, w is the crystal width, and h is the crystal height. The grinding surface is a 30 mm × 2 mm crystal plane. The side diffraction angle deviation is ±3′; the positive and negative deviations of the diffraction angle are indicated.

[0088] The planetary wheel 300 was designed and manufactured using a domestically produced 9B double-sided polishing machine, with a maximum processing height of 40mm. The planetary wheel 300 has a diameter of Φ225mm. Each set of planetary wheels 300 consists of 5 units, and each planetary wheel 300 is designed with 10 working holes 310, with an inner diameter of 30.5mm × 40.5mm. The thickness of the planetary wheel 300 is H = 15mm.

[0089] Crystals 100 are arranged in a block. After the crystals 100 are bonded together, their shapes are cut without disassembling them. This experiment is actually a grinding of the side of the crystals 100, and the grinding surface is directly used as the grinding reference after directional cutting. Crystals 100 are arranged in one row along the length direction and 20 columns along the width direction to form crystal block 200. When arranging crystals 100, each row is arranged according to the positive and negative diffraction deviations, and each column is arranged according to the positive and negative diffraction deviations to reduce the cumulative error of diffraction deviations. Crystal block 200 is placed vertically in the area formed by the heating plate and the horizontally placed first support 500 and second support 600.

[0090] Heat bonding. The heating plate temperature is 90℃, and the crystal 100, the first support 500, and the second support 600 are preheated simultaneously. Paraffin wax is applied to the top of the crystal 100. After the paraffin wax melts due to the heat, it flows into the gaps between the crystals 100. The first support 500 and the second support 600 are pushed horizontally to clamp the crystal 100, and the excess paraffin wax is squeezed out. The crystal assembly 200 workpiece is now complete.

[0091] After cooling, gently tap the heating plate, the first support 500 and the second support 600 with a rubber hammer, and take out the glued crystal block 200. At this time, the workpiece geometry of the crystal block 200 is 30mm×40mm×26mm, and each crystal block 200 is composed of 20 crystals 100.

[0092] Grinding. Place the planetary wheel 300 on the grinding disc of the double-sided grinding machine, place the crystal block 200 in the working hole 310 of the planetary wheel 300, prepare the grinding slurry, and set the parameters such as grinding pressure, grinding disc speed, and grinding slurry flow rate to grind the crystal block 200 to 25.05±0.01mm.

[0093] Cleaning. Place the crystal assembly 200 on a heated plate and heat it to 70°C to melt the paraffin. Disassemble the crystal assembly 200 into crystal 100 and clean it with an organic solvent.

[0094] In this embodiment, the grinding time is 1 hour, the batch processing quantity is 1000 pieces, the number of defective pieces is 2, the defect rate is 0.2%, which meets the requirements for mass production of crystal components. Finished product inspection results: Crystal 100 height h = 25.05 ± 0.01 mm, grinding surface angle deviation z ± 3′, chipped edge size ≤ 0.2 mm.

[0095] The above are merely preferred embodiments of this application and are not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. A method for polishing the end face of a crystal, characterized in that, include: Multiple crystals (100) are arranged in an array along the length and / or width direction of the crystals (100) and bonded together to form a crystal block (200); The crystal assembly (200) is placed in the working hole (310) of the planetary wheel (300); The planetary wheel (300) is placed in a grinding and polishing machine to grind and polish the crystal block (200) to a preset height; Before arranging and bonding multiple crystals (100) along the length and / or width directions of the crystals (100) to form the crystal block (200), the method further includes the following steps: detecting the positive and negative deviations of the diffraction angles of the unprocessed surfaces of the crystals (100); the crystals (100) are arranged in the same direction with the positive diffraction deviations of the same crystal plane to form the crystal block (200), or the crystals (100) are arranged in the same direction with the negative diffraction deviations of the same crystal plane to form the crystal block (200); wherein, the side of the crystal (100) with a positive diffraction angle on the same crystal plane in the crystal block (200) is alternately arranged with the side of the crystal (100) with a negative diffraction angle on the same crystal plane.

2. The crystal end-face polishing method according to claim 1, characterized in that, The planetary wheel (300) includes at least one working hole (310), which is symmetrically distributed along the axis of symmetry of the center of the planetary wheel (300).

3. The crystal end-face polishing method according to claim 2, characterized in that, The working hole (310) is rectangular, with a length of 30mm-45mm and a width of 30mm-45mm.

4. The crystal end-face polishing method according to claim 1, characterized in that, The step of bonding multiple crystals (100) to form the crystal assembly (200) includes: An adhesive is provided, the crystal assembly (200) is held with a clamp, the adhesive is placed on the crystal assembly (200), the adhesive flows into the gap between the crystals (100), the crystal assembly (200) is clamped with the clamp, and excess adhesive is squeezed out. After the adhesive has solidified, the clamp is removed.

5. The crystal end-face polishing method according to claim 4, characterized in that, The clamp includes a first bracket (500) and a second bracket (600) that are detachably connected. The first bracket (500) and the second bracket (600) are L-shaped and are used to move towards each other in a diagonal direction along the crystal assembly (200) to clamp the crystal assembly (200).

6. The crystal end-face polishing method according to claim 4, characterized in that, The adhesive is paraffin wax.

7. The crystal end-face polishing method according to claim 1, characterized in that, The thickness of the planetary wheel (300) is 5mm-20mm.

8. The crystal end-face polishing method according to claim 4, characterized in that, After the step of placing the planetary wheel (300) into the polishing machine to grind and polish the crystal assembly (200), the polishing method further includes: Remove the adhesive and separate the crystal assembly (200) into the crystal (100).

9. The crystal end-face polishing method according to claim 8, characterized in that, After the step of separating the crystal assembly (200) into the crystal (100), the polishing method further includes: The crystal (100) was cleaned with an organic solvent.

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