Machine table control method and device, electronic equipment and computer readable storage medium

Abstract

The application provides a control method and device of a machine table, electronic equipment and a computer readable storage medium. After the machine table completes deposition film layer processing on at least one batch of wafers, the thickness of the film layer deposited on the inner wall of each chamber of the machine table and the processing sequence of the wafers by the machine table are determined to determine the batch quantity of the next batch of wafers sent to the machine table. When the machine table is about to be cleaned, the batch quantity of the wafers sent to the machine table can be reduced in time, thereby preventing defects on the surface of the wafers sent to the machine table due to too long waiting time for cleaning of the machine table, and improving the yield of the wafers manufactured by the machine table.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a control method and device of a machine table, an electronic device, and a computer readable storage medium. BACKGROUND

[0002] A machine table is an apparatus for manufacturing semiconductor circuits on a wafer. The machine table is provided with multiple closed chambers. When the wafer is sent into the machine table, the chambers in the machine table can be configured to perform deposition film layer processing on the wafer, so as to form a semiconductor circuit on the wafer.

[0003] When the deposition film layer processing is performed on the wafer in the chamber, part of the film layer is deposited on the inner wall of the chamber. After a certain period of time, when the thickness of the film layer on the inner wall is too large, it will cause defects such as non-uniform film thickness when the deposition film layer processing is performed on the wafer in the chamber, and reduce the yield of the semiconductor manufactured by the machine table. Therefore, the machine table is configured to perform cleaning processing on the chamber when it is detected that the thickness of the film layer on the inner wall of the chamber is greater than a threshold. When multiple batches of wafers are sent into the machine table, if the machine table detects that the thickness of the film layer on the inner wall of one of the multiple chambers is greater than the threshold after completing the manufacturing of part of the batches of wafers, and starts to perform cleaning processing on the chamber, the batches of wafers that have not been manufactured and sent into the machine table will stay in the machine table and wait for the completion of the cleaning processing. Once the waiting time is too long, defects such as contamination or oxidation of the film layer on the wafer will occur, and the yield of the wafer manufactured by the machine table will be reduced.

[0004] Therefore, how to prevent the wafers that have been sent into the machine table from causing defects due to the waiting time for the cleaning processing of the machine table being too long is a technical problem to be solved in the field. SUMMARY

[0005] The present application provides a control method and device of a machine table, an electronic device, and a computer readable storage medium, for preventing the wafers sent into the machine table from causing defects due to the waiting time for the cleaning processing of the machine table being too long, so as to improve the yield of the wafers manufactured by the machine table.

[0006] The first aspect of the present application provides a control method of a machine table, comprising: obtaining a film layer thickness deposited on an inner wall of a plurality of chambers of the machine table after the machine table completes deposition film layer processing on at least one batch of wafers; obtaining a processing sequence of the machine table on wafers; wherein the processing sequence is a single-line processing sequence or a multi-line processing sequence, the single-line processing sequence is that the machine table performs deposition film layer processing on the wafers by using one target chamber of the plurality of chambers, and the multi-line processing sequence is that the machine table performs deposition film layer processing on the wafers by using at least two target chambers of the plurality of chambers; and determining a batch quantity of a next batch of wafers sent to the machine table according to the processing sequence and the film layer thickness of the target chambers of the plurality of chambers used for processing the at least one batch of wafers.

[0007] In an embodiment of the first aspect of the present application, the determining of the batch quantity of the next batch of wafers sent to the machine table according to the processing sequence and the film layer thickness of the target chambers of the plurality of chambers used for processing the at least one batch of wafers comprises: when the processing sequence is the single-line processing sequence and the film layer thickness of the target chamber is greater than a first threshold value and less than a second threshold value, determining that the batch quantity of the next batch of wafers is 1; and when the film layer thickness deposited on the inner wall of the target chamber is greater than the second threshold value, performing cleaning processing on the target chamber by the machine table.

[0008] In an embodiment of the first aspect of the present application, the determining of the batch quantity of the next batch of wafers sent to the machine table according to the processing sequence and the film layer thickness of the target chambers of the plurality of chambers used for processing the at least one batch of wafers further comprises: when the processing sequence is the single-line processing sequence and the film layer thickness of the target chamber is less than the first threshold value, determining that the batch quantity of the next batch of wafers sent to the machine table is a preset quantity of the machine table.

[0009] In an embodiment of the first aspect of the present application, the determining of the batch quantity of the next batch of wafers sent to the machine table according to the processing sequence and the film layer thickness of the target chambers of the plurality of chambers used for processing the at least one batch of wafers further comprises: when the processing sequence is the multi-line processing sequence, determining that the batch quantity of the next batch of wafers sent to the machine table is a preset quantity of the machine table.

[0010] In an embodiment of the first aspect of the present application, the method further comprises: when the machine table performs deposition film layer processing on wafers by using a target chamber of the plurality of chambers, if it is determined that the machine table performs cleaning processing on the target chamber, controlling the machine table to perform deposition film layer processing on wafers by using an idle chamber of the plurality of chambers other than the target chamber instead of the target chamber.

[0011] In an embodiment of the first aspect of the present application, the difference between the first threshold value and the second threshold value is the sum of the thicknesses of the deposited film layers of two batches of the wafers.

[0012] In an embodiment of the first aspect of the present application, after determining the batch quantity of the next batch of wafers to be sent to the machine, the method further comprises: sending the batch quantity to a RTD of the machine.

[0013] In an embodiment of the first aspect of the present application, the method further comprises: when the machine completes the cleaning process of the at least one target chamber, performing machine adjustment and measurement on the machine.

[0014] The second aspect of the present application provides a control device of a machine, comprising: a first obtaining module, configured to obtain the thickness of the film layer deposited on the inner wall of each chamber of the machine after the machine completes the deposition film layer process of at least one batch of wafers sent to the machine; a second obtaining module, configured to obtain the processing sequence of the machine for wafers; wherein the processing sequence is a single-line processing sequence or a multi-line processing sequence, the single-line processing sequence is that the machine performs the deposition film layer process on the sent wafers through one target chamber of the plurality of chambers, and the multi-line processing sequence is that the machine performs the deposition film layer process on the sent wafers through at least two target chambers of the plurality of chambers; and a determining module, configured to determine the batch quantity of the next batch of wafers to be sent to the machine according to the processing sequence and the thickness of the film layer of the target chamber of the plurality of chambers for processing the at least one batch of wafers.

[0015] In an embodiment of the second aspect of the present application, when the processing sequence is the single-line processing sequence, and the thickness of the film layer of the target chamber is greater than the first threshold value and less than the second threshold value, the determining module is specifically configured to determine that the batch quantity of the next batch of wafers is 1; and when the thickness of the film layer deposited on the inner wall of the target chamber is greater than the second threshold value, the machine performs the cleaning process on the target chamber.

[0016] In an embodiment of the second aspect of the present application, when the processing sequence is the single-line processing sequence, and the thickness of the film layer of the target chamber is less than the first threshold value, the determining module is specifically configured to determine that the batch quantity of the next batch of wafers to be sent to the machine is a preset quantity of the machine.

[0017] In an embodiment of the second aspect of the present application, when the processing sequence is the multi-line processing sequence, the determining module is specifically configured to determine that the batch quantity of the next batch of wafers to be sent to the machine is a preset quantity of the machine.

[0018] In an embodiment of the second aspect of the present application, the device further comprises a control module configured to, when the machine is performing deposition film layer processing on the wafer through a target chamber of the plurality of chambers, if it is determined that the machine is performing cleaning processing on at least one target chamber, control the machine to perform deposition film layer processing on the wafer through an idle chamber of the plurality of chambers other than the target chamber, instead of the at least one target chamber.

[0019] In an embodiment of the second aspect of the present application, the difference between the first threshold value and the second threshold value is the sum of the deposition film layer thicknesses of the two batches of wafers.

[0020] In an embodiment of the second aspect of the present application, the device further comprises a sending module configured to send the batch quantity to a RTD of the machine.

[0021] In an embodiment of the second aspect of the present application, the device further comprises a machine adjustment and measurement module configured to, when the machine completes the cleaning processing on the at least one target chamber, perform machine adjustment and measurement processing on the machine.

[0022] The third aspect of the present application provides an electronic device, comprising a processor and a memory, wherein the memory stores a computer program, and when the processor executes the computer program, the processor can be configured to execute the control method of the machine according to any one of the first aspect of the present application.

[0023] The fourth aspect of the present application provides a computer readable storage medium, which stores a computer program, and when the computer program is executed, it can be used to execute the control method of the machine according to any one of the first aspect of the present application.

[0024] In summary, the control method of the machine, the device, the electronic device and the computer readable storage medium provided by the present application can determine the batch quantity of the next batch of wafers sent to the machine after the machine completes the deposition film layer processing on the at least one batch of wafers sent to the machine, according to the thickness of the film layer deposited on the inner wall of the plurality of chambers of the machine and the processing sequence of the wafer by the machine, so as to timely reduce the batch quantity of the wafers sent to the machine when the machine is about to perform cleaning processing, thereby preventing the defects on the surface of the wafers sent to the machine due to the too long waiting time for the cleaning processing of the machine, and further improving the yield of the wafers manufactured by the machine. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without any creative labor.

[0026] Figure 1 This is a schematic diagram illustrating the application scenario of this application;

[0027] Figure 2 This is a schematic diagram of the processing timing of a machine.

[0028] Figure 3 This is a schematic diagram of the processing timing for another type of machine.

[0029] Figure 4 A schematic diagram illustrating another application scenario provided in this application;

[0030] Figure 5 A flowchart illustrating an embodiment of the machine control method provided in this application;

[0031] Figure 6 A flowchart illustrating another embodiment of the machine control method provided in this application. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0033] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0034] Figure 1 This is a schematic diagram illustrating the application scenario of this application, such as... Figure 1 As shown, this application relates to a machine for fabricating semiconductors on wafers, wherein the machine is provided with multiple chambers for performing processes such as film deposition on the wafers. Figure 1For example, n chambers are used as an example. When at least one batch of wafers is sent into the machine, the deposition units in the machine can perform deposition film layer processing on the wafers in the preset chambers, so as to form a semiconductor circuit on the wafers.

[0035] In some embodiments, when multiple batches of wafers are sent into the machine, the deposition units in the machine can perform deposition film layer processing on the multiple batches of wafers in a preset target chamber in sequence. For example, in the example shown in FIG. 1, when two batches of wafers P1 and P2 are sent into the machine, the deposition units can perform deposition film layer processing on the wafers in batch P1 in chamber 1, and then perform deposition film layer processing on the wafers in batch P2. This processing sequence can be referred to as a "single-line processing sequence", a "single-line run", and the like. Figure 1

[0036] In some embodiments, when multiple batches of wafers are sent into the machine, the deposition units in the machine can perform deposition film layer processing on the multiple batches of wafers in a preset target chamber in sequence. For example, in the example shown in FIG. 1, when two batches of wafers P1 and P2 are sent into the machine, the deposition units can perform deposition film layer processing on the wafers in batch P1 in chamber 1, and then perform deposition film layer processing on the wafers in batch P2. This processing sequence can be referred to as a "single-line processing sequence", a "single-line run", and the like.

[0037] When deposition film layer processing is performed on wafers in a chamber, a portion of the film layer is also deposited on the inner wall of the chamber. After a certain period of time, the thickness of the film layer on the inner wall of the chamber is too large, which causes defects such as non-uniform film thickness when deposition film layer processing is performed on wafers in the chamber, thereby reducing the yield of the semiconductor manufactured by the machine. Therefore, some machines are also provided with a cleaning unit, which is configured to perform cleaning processing on a chamber when it is detected that the thickness of the film layer on the inner wall of the chamber is greater than a threshold value after the chamber completes deposition film layer processing on wafers.

[0038] When multiple batches of wafers are sent into the machine, if the machine adopts a single-line processing sequence to sequentially perform processing on multiple batches of wafers, and deposition film layer processing on a portion of the batches of wafers is completed, if it is detected that the thickness of the film layer on the inner wall of the target chamber is greater than a threshold value, the cleaning unit starts to perform cleaning processing on the chamber. However, another portion of the batches of wafers that are sent into the machine but have not yet entered the target chamber for deposition film layer processing will stay in the machine and wait for the cleaning processing to be completed. Since the cleaning processing time is generally 15-25 hours, if the wafers stay in the machine for too long, defects such as contamination or oxidation of the film layer on the wafers will occur, thereby reducing the yield of the wafers manufactured by the machine. The above waiting time can also be referred to as a silicon wafer queue-time limit (Q-Time) and the like.

[0039] For example, Figure 2 ​As shown in the processing timing diagram of a machine table, after multiple batches of wafers are sent into the machine table, the machine table adopts a single-line processing sequence. At t1, the wafer of P1 batch is processed by the target chamber for deposition film layer processing. After the wafer of P1 batch is processed, at t2, the wafer of P2 batch is processed by the target chamber for deposition film layer processing. Finally, at t3, the processing of the wafer of P2 batch is completed. Figure 3 As shown in the processing timing diagram of another machine table, after multiple batches of wafers are sent into the machine table, the machine table adopts a single-line processing sequence. At t1, the wafer of P1 batch is processed by the target chamber for deposition film layer processing. After the wafer of P1 batch is processed, at t2, the cleaning unit determines that the film layer deposited in the target chamber is greater than the threshold value, and then the target chamber is cleaned. At this time, although the wafer of P1 batch has been processed, the wafer of P2 batch sent at the same time does not undergo deposition film layer processing, but only stays in the machine table, waiting for t4 after the target chamber is cleaned. At t4, the wafer of P2 batch is processed by the target chamber for deposition film layer processing. Finally, at t5, the processing of the wafer of P2 batch is completed. It can be seen that during the long period of time between t2 and t4, the wafer of P2 batch will be in a state of staying and waiting.

[0040] Therefore, the present application provides a control method and device of a machine table, an electronic device and a computer readable storage medium to solve the technical problem of Figure 1 In the scenario shown, the wafers sent into the machine table are defective due to too long waiting time for machine table cleaning, thereby reducing the yield of wafers manufactured by the machine table. The technical solutions of the present application will be described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0041] Figure 4 As shown in the processing timing diagram of another application scenario provided by the present application, Figure 4 As shown in the scenario Figure 1 Based on the scenario shown, in order to control the machine table, a machine table control device is further included outside the machine table. The machine table control device can be a computer, a server or other electronic device, or more specifically, a tool control system (TCS). In the embodiments of the present application, the TCS is used as the execution subject for controlling the machine table, but it is not limited thereto. Other electronic devices arranged inside or outside the machine table can also be used for control. For example, Figure 4The scene shown also includes a real-time dispatch system (RTD) of the machine. When the TCS determines the batch quantity of the next batch of wafers sent to the machine, it can send the batch quantity to the RTD, so that the RTD controls the wafers corresponding to the batch quantity to be sent to the machine. The RTD can also be other electronic devices arranged inside or outside the machine.

[0042] Figure 5 The flowchart of an embodiment of the control method of the machine provided in the present application is shown in Figure 5 The machine control method shown can be applied to the scene shown in Figure 4 The machine control method shown can be applied to the scene shown in

[0043] S100: The machine completes the deposition film layer processing of the sent at least one batch of wafers.

[0044] In the present application, the TCS executes the control method of the machine provided in the present application after determining that the machine completes the deposition film layer processing of the at least one batch of wafers sent to the machine. Assuming that the machine sends 2 batches of wafers at a time according to the preset batch quantity, then in S100, the TCS waits and determines that the machine has completed the deposition film layer processing of the 2 batches of wafers sent.

[0045] S101: After the machine completes the deposition film layer processing of the at least one batch of wafers sent in S100, the TCS obtains the film layer thickness deposited on the inner wall of the plurality of chambers of the machine.

[0046] In some embodiments, the TCS can specifically obtain the film layer thickness deposited on the inner wall of the plurality of chambers of the machine through a control unit in the machine. The control unit in the machine can be an equipment automation program (EPA) and the like, which can be used to control the production process of the machine and obtain the state parameters of the machine in real time, including the film layer thickness deposited on the inner wall of the plurality of chambers and the like. For example, the EAP can use its Thickness SVID and other functions to query the film layer thickness of the inner wall of the plurality of chambers of the machine, and update the data of the film layer thickness to the TCS after the machine completes the deposition film layer processing of the sent wafers each time.

[0047] S102: The TCS obtains the processing sequence of the wafers of the machine.

[0048] The wafer processing sequence of the equipment includes single-line processing and multi-line processing. In single-line processing, the equipment sequentially deposits film layers on different batches of wafers through one target chamber from its multiple internal chambers. In multi-line processing, the equipment simultaneously deposits film layers on different batches of wafers through the same number of target chambers as the number of batches.

[0049] In some embodiments, the TCS can specifically obtain the wafer processing sequence of the machine through control units such as the EPA within the machine.

[0050] S103: Based on the processing order obtained in S102 and the film thickness of the target chamber in S100 within the machine that processes at least one batch of wafers, the TCS determines the batch number of the next batch of wafers to be fed into the machine.

[0051] Specifically, when the machine operates on a single-line processing sequence and the film thickness of the target chamber for the currently processed wafer reaches the first threshold but has not yet reached the second threshold, the TCS reduces the batch size of wafers fed into the machine in advance. Subsequently, when the TCS sends the batch size determined in S103 to the RTD, the RTD feeds the wafers into the machine according to the batch size.

[0052] In summary, the machine control method provided in this embodiment can determine the batch size of the next batch of wafers to be fed into the machine after the machine has completed the deposition of film layers on at least one batch of wafers. This is based on the film layer thickness deposited on the inner walls of multiple chambers of the machine and the current processing sequence of the wafers. Therefore, when the machine is about to perform a cleaning process, the batch size of wafers fed into the machine can be reduced in a timely manner, thereby reducing the waiting time for the wafers to wait for the cleaning process. For example, the waiting time can be reduced by up to 95%, preventing wafers from staying inside the machine for too long and causing defects on the wafer surface, ultimately improving the yield of wafers manufactured by the machine. Furthermore, the machine control method provided in this application is automated through machine control equipment such as TCS, which is safe and stable, effectively reducing the error in manually determining the batch size of wafers fed into the machine and reducing safety hazards.

[0053] Figure 6 A flowchart illustrating another embodiment of the machine control method provided in this application is shown below. Figure 6 It shows Figure 5 The specific implementation of S103 involves TCS determining the batch quantity of wafers to be fed into the machine next based on the processing sequence of the machine and the film thickness of the target chamber. For example... Figure 6 As shown, TCS will determine whether the current machine is a single-line processing sequence and whether the membrane thickness of the target chamber is greater than the first threshold and less than the second threshold based on the obtained processing sequence and membrane thickness.

[0054] As Figure 6 shown in the determination result is yes, the TCS determines that the processing order of the machine is a single-line processing order, and the film thickness of the target chamber is greater than a first threshold value and less than a second threshold value, and determines that the batch quantity of the next batch of wafers is 1. The second threshold value is determined by the cleaning unit for the film thickness of the chamber, i.e., when the film thickness deposited on the inner wall of the target chamber is greater than the second threshold value, the cleaning unit will perform cleaning processing on the target chamber. The first threshold value is set to be slightly less than the second threshold value, for example, when the second threshold value is 9500 nm, the first threshold value can be set to 9200 nm, and the difference between the first threshold value and the second threshold value can be the sum of the deposition film thicknesses of two batches of wafers, for example, each batch of wafers includes 25 wafers, and the difference between the second threshold value and the first threshold value can be the sum of the deposition film thicknesses of 50 wafers. When the first threshold value is set in the above manner, when the TCS determines that the film thickness of the current target chamber is already greater than the first threshold value but less than the second threshold value, it means that the film thickness of the target chamber will be greater than the second threshold value after the target chamber continues to perform deposition film processing on at least two batches of wafers. At this time, the TCS timely reduces the batch quantity of wafers sent to the machine, for example, determines to send only 1 batch of wafers to the machine each time, so that even after the deposition film processing is performed on the 1 batch of wafers, the wafers are cleaned, and at this time, there are no more batches of wafers sent to the machine to stay and wait, thereby preventing the wafers sent to the machine from causing defects on the surface of the wafers due to the long waiting time for the cleaning processing of the machine.

[0055] In some embodiments, as long as the batch quantity of wafers sent to the machine can be reduced to ensure that the sent wafers will not stay and wait due to cleaning of the target chamber, the batch quantity of wafers sent to the machine can also be 2 when the film thickness of the target chamber is greater than the first threshold value and less than the second threshold value.

[0056] As Figure 6 shown in the determination result is no, the TCS determines that the machine remains in a normal working state and does not actively adjust the quantity of the next batch of wafers sent to the machine, at which time the RTD can send a preset quantity of wafers to the machine.

[0057] In one case where the determination is no, when the TCS determines that the processing order of the machine is a single-line processing, and the film thickness of the inner wall of the target chamber is less than the first threshold value, it means that the film thickness is also less than the second threshold value, and the target chamber will not be cleaned after the next batch of wafers is sent to the machine. Therefore, the normal operation of the machine can be maintained.

[0058] In another case of the determination of no, when the TCS determines that the processing sequence of the machine is multi-line processing, then the machine can be maintained in normal operation regardless of whether the film thickness of the target chamber is less than the first threshold value. Since the multi-line processing sequence involves multiple target chambers processing simultaneously, even if the film thickness of one target chamber is greater than the first threshold value and the chamber is cleaned after processing a batch of wafers, there will be no wafers waiting for cleaning in the target chamber after processing a batch of wafers, so there will be no problem of wafers waiting for cleaning for too long.

[0059] In some embodiments, when the TCS determines that the processing sequence of the machine is a multi-line processing sequence, the number of batches of wafers sent into the machine can be determined to be 2 or 3, so that the production capacity of the machine per unit time can be improved without causing the wafers sent into the machine to stay for too long.

[0060] In some embodiments, the present application also provides a control method of a machine. When the machine processes wafers through a target chamber in a plurality of chambers, if it is determined that the machine cleans the target chamber, the machine is controlled to process the wafers through an idle chamber in the plurality of chambers instead of the target chamber being cleaned. This embodiment can be applied to a scenario where the machine is in a single-line processing sequence. For example, when 2 batches of wafers are sent into the machine, the machine uses chamber 1 in the plurality of chambers to process the 2 batches of wafers in a single-line processing sequence, and after chamber 1 processes the first batch of wafers, chamber 1 needs to be cleaned. The machine controls chamber 2 in the plurality of chambers to continue processing the second batch of wafers, thereby avoiding the second batch of wafers from staying in the machine after being sent into the machine.

[0061] For the machine to which the present application is applied, after the target chamber in the machine completes cleaning, the target chamber usually directly processes the next batch of wafers without machine adjustment and measurement, which can cause the film thickness of the next batch of wafers to be abnormal and reduce the yield of wafers produced by the machine. Therefore, in some embodiments, the present application also provides a control method of a machine. After the machine completes cleaning of the target chamber, the machine is adjusted and measured, and after the adjustment and measurement are completed, the machine continues to process the wafers, which can avoid the film thickness of the next batch of wafers from being abnormal and further improve the yield of wafers produced by the machine.

[0062] In the foregoing embodiments, the control method of the machine table provided by the embodiments of the present application is introduced. In order to realize each function in the method provided by the embodiments of the present application, the TCS as an execution subject can include a hardware structure and / or a software module to realize each function in the form of a hardware structure, a software module, or a hardware structure plus a software module. Whether a certain function in each function is executed in the form of a hardware structure, a software module, or a hardware structure plus a software module depends on the specific application of the technical solution and the design constraint conditions.

[0063] For example, the present application provides a control device of a machine table, which can be a machine table control device such as a TCS, and the device includes a first acquisition module, a second acquisition module, and a determination module. The first acquisition module is configured to acquire the thickness of the film layer deposited on the inner wall of each chamber of the machine table after the machine table completes the deposition film layer processing of at least one batch of wafers. The second acquisition module is configured to acquire the processing sequence of the wafers by the machine table. The processing sequence can be a single-line processing sequence or a multi-line processing sequence. The single-line processing sequence means that the machine table performs deposition film layer processing on the wafers by using one target chamber in the plurality of chambers. The multi-line processing sequence means that the machine table performs deposition film layer processing on the wafers by using at least two target chambers in the plurality of chambers. The determination module is configured to determine the batch quantity of the next batch of wafers to be sent to the machine table according to the processing sequence and the thickness of the film layer of the target chamber in the plurality of chambers for processing the at least one batch of wafers.

[0064] In some embodiments, the control device of the machine table further includes a control module configured to, when the machine table performs deposition film layer processing on the wafers by using a target chamber in the plurality of chambers, control the machine table to perform deposition film layer processing on the wafers by using an idle chamber in the plurality of chambers other than the target chamber if it is determined that the machine table performs cleaning processing on the target chamber.

[0065] In some embodiments, the control device of the machine table further includes a sending module configured to send the batch quantity to a dispatch control system RTD of the machine table.

[0066] In some embodiments, the control device of the machine table further includes a machine adjustment and measurement module configured to perform machine adjustment and measurement processing on the machine table when the machine table completes the cleaning processing on the at least one target chamber.

[0067] The specific implementation and principles in each embodiment of the control device of the machine table provided by the present application can refer to the control method of the machine table provided by the foregoing embodiments of the present application, and the specific implementation and principles are the same, which will not be described again.

[0068] It should be noted that the division of the various modules of the above apparatus is only a logical functional division, and all or part of them can be integrated into a physical entity or physically separated when actually implemented. These modules can all be implemented in the form of software called by a processing element; all can be implemented in the form of hardware; or some modules can be implemented in the form of software called by a processing element, and some modules can be implemented in the form of hardware. It can be a separately established processing element, or it can be integrated into a chip of the above apparatus, in addition, it can also be stored in the form of program code in the memory of the above apparatus, and the function of the above determination module is called and executed by a processing element of the above apparatus. The implementation of other modules is similar. In addition, all or part of these modules can be integrated together or independently implemented. The processing element described herein can be an integrated circuit with signal processing capability. In the implementation process, the steps of the above method or the above various modules can be completed by the integrated logic circuit of the hardware in the processor element or the instructions in the form of software.

[0069] For example, the above modules can be one or more integrated circuits configured to implement the above method, such as one or more application specific integrated circuits (ASICs), or one or more digital signal processors (DSPs), or one or more field programmable gate arrays (FPGAs), etc. For another example, when a certain module above is implemented in the form of program code called by a processing element, the processing element can be a general purpose processor, such as a central processing unit (CPU) or other processor that can call program code. For another example, these modules can be integrated together to implement in the form of system on a chip (SOC).

[0070] In the embodiments described above, all or part can be implemented by software, hardware, firmware or any combination thereof. When implemented by software, all or part can be implemented in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed by a computer, the computer instructions generate all or part of the processes or functions described in the embodiments of the present application. The computer can be a general purpose computer, a special purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer readable storage medium or transferred from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions can be transferred from one website, computer, server or data center to another website, computer, server or data center through wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.) manner. The computer readable storage medium can be any available medium accessible by a computer or a data storage device such as a server, data center, etc. integrated with one or more available media. The available media can be magnetic media (such as floppy disk, hard disk, magnetic tape), optical media (such as DVD), or semiconductor media (such as solid state disk (SSD)) and the like.

[0071] The present application also provides an electronic device, comprising: a processor and a memory; wherein the memory stores a computer program, and when the processor executes the computer program, the processor can be used to execute the control method of the machine table according to any one of the preceding embodiments of the present application.

[0072] The present application also provides a computer readable storage medium, which stores a computer program, and when the computer program is executed, the computer program can be used to execute the control method of the machine table according to any one of the preceding embodiments of the present application.

[0073] The embodiments of the present application also provide a chip for executing the control method of the machine table according to any one of the preceding embodiments of the present application.

[0074] The embodiments of the present application also provide a program product, which includes a computer program stored in a storage medium, and at least one processor can read the computer program from the storage medium, and when the at least one processor executes the computer program, the control method of the machine table according to any one of the preceding embodiments of the present application can be implemented.

[0075] Those skilled in the art can understand that all or part of the steps of the above-mentioned method embodiments can be completed by program instruction related hardware. The foregoing program can be stored in a computer readable storage medium. The program executes to perform the steps of the above-mentioned method embodiments; and the foregoing storage medium includes various storage media that can store program codes, such as ROM, RAM, magnetic disk or optical disk.

[0076] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for controlling a machine tool, characterized in that, include: After the machine completes the deposition of film layers on at least one batch of wafers, the thickness of the film layers deposited on the inner walls of multiple chambers of the machine is obtained. The processing sequence of the wafer by the machine is obtained; wherein the processing sequence is a single-line processing sequence or a multi-line processing sequence, wherein the single-line processing sequence is that the machine performs film deposition processing on the wafer through one of the multiple chambers, and the multi-line processing sequence is that the machine performs film deposition processing on the wafer through at least two of the multiple chambers. Based on the processing sequence and the film thickness of the target chamber in the plurality of chambers used to process the at least one batch of wafers, the batch number of the next batch of wafers fed into the machine is determined.

2. The method according to claim 1, characterized in that, The step of determining the batch quantity of the next batch of wafers fed into the machine based on the processing sequence and the film thickness of the target chamber in the plurality of chambers used to process the at least one batch of wafers includes: When the processing sequence is a single-line processing sequence, and the film thickness of the target chamber is greater than the first threshold and less than the second threshold, the batch quantity of the next batch of wafers is determined to be 1. When the thickness of the film deposited on the inner wall of the target chamber is greater than the second threshold, the machine performs a cleaning process on the target chamber.

3. The method according to claim 2, characterized in that, The step of determining the batch quantity of the next batch of wafers fed into the machine based on the processing sequence and the film thickness of the target chamber in the plurality of chambers used to process the at least one batch of wafers further includes: When the processing sequence is a single-line processing sequence and the film thickness of the target chamber is less than the first threshold, the batch number of the next batch of wafers fed into the machine is determined to be the preset number of the machine.

4. The method according to any one of claims 1-3, characterized in that, The step of determining the batch quantity of the next batch of wafers fed into the machine based on the processing sequence and the film thickness of the target chamber in the plurality of chambers used to process the at least one batch of wafers further includes: When the processing sequence is a multi-line processing sequence, the batch number of the next batch of wafers fed into the machine is determined to be the preset number of the machine.

5. The method according to claim 1, characterized in that, The method further includes: When the machine performs film deposition on the wafer through the target chamber among the plurality of chambers, if it is determined that the machine performs cleaning treatment on at least one target chamber, the machine is controlled to perform film deposition on the wafer through an empty chamber among the plurality of chambers other than the target chamber, instead of the at least one target chamber.

6. The method according to claim 2, characterized in that, The difference between the first threshold and the second threshold is the sum of the thicknesses of the deposited film layers in the two batches of the wafers.

7. The method according to claim 1, characterized in that, After determining the batch quantity of the next batch of wafers to be fed into the machine, the process further includes: The batch quantity is sent to the dispatch control system RTD of the machine.

8. The method according to claim 1, characterized in that, The method further includes: Once the machine has completed the cleaning process of the at least one target chamber, the machine is adjusted and tested.

9. A control device for a machine tool, characterized in that, include: The first acquisition module is used to acquire the film thickness deposited on the inner wall of multiple chambers of the machine after the machine has completed the deposition film processing of at least one batch of wafers. The second acquisition module is used to acquire the processing order of the wafer by the machine; wherein the processing order is a single-line processing order or a multi-line processing order, the single-line processing order is that the machine performs film deposition processing on the fed wafer through one of the multiple chambers, and the multi-line processing order is that the machine performs film deposition processing on the fed wafer through at least two of the multiple chambers. A determining module is configured to determine the batch quantity of the next batch of wafers to be fed into the machine based on the processing sequence and the film thickness of the target chamber in the plurality of chambers used to process the at least one batch of wafers.

10. The apparatus according to claim 9, characterized in that, The determining module is specifically used for, When the processing sequence is a single-line processing sequence, and the film thickness of the target chamber is greater than the first threshold and less than the second threshold, the batch quantity of the next batch of wafers is determined to be 1. When the thickness of the film deposited on the inner wall of the target chamber is greater than the second threshold, the machine performs a cleaning process on the target chamber.

11. The apparatus according to claim 10, characterized in that, The determining module is specifically used for, When the processing sequence is a single-line processing sequence and the film thickness of the target chamber is less than the first threshold, the batch number of the next batch of wafers fed into the machine is determined to be the preset number of the machine.

12. The apparatus according to any one of claims 9-11, characterized in that, The determining module is specifically used for, When the processing sequence is a multi-line processing sequence, the batch number of the next batch of wafers fed into the machine is determined to be the preset number of the machine.

13. The apparatus according to claim 9, characterized in that, Also includes: The control module is configured to, when the machine is performing film deposition on the wafer through a target chamber among the plurality of chambers, if it is determined that the machine is performing cleaning treatment on at least one target chamber, control the machine to perform film deposition on the wafer through an empty chamber among the plurality of chambers other than the target chamber, instead of the at least one target chamber.

14. The apparatus according to claim 10, characterized in that, The difference between the first threshold and the second threshold is the sum of the thicknesses of the deposited film layers in the two batches of the wafers.

15. The apparatus according to claim 9, characterized in that, Also includes: The sending module is used to send the batch quantity to the dispatch control system RTD of the machine.

16. The apparatus according to claim 9, characterized in that, Also includes: The adjustment and testing module is used to adjust and test the machine after the machine has completed the cleaning process of the at least one target chamber.

17. An electronic device, characterized in that, include: A processor and a memory; wherein the memory stores a computer program, and when the processor executes the computer program, the processor can be used to perform the machine control method as described in any one of claims 1-8.

18. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which, when executed, can be used to perform the machine control method as described in any one of claims 1-8.

Images