Magnetic sensor device

Abstract

A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute a first generation process of generating a first initial detection value, a second generation process of generating a second initial detection value, a first correction process, a second correction process, and a determination process. The first correction process is a process of correcting and updating the first initial detection value. The second correction process is a process of correcting and updating the second initial detection value. The processor executes the determination process after alternately executing the first correction process and the second correction process.

Description

TECHNICAL FIELD

[0001] The present application relates to a magnetic sensor device configured to detect a plurality of magnetic fields in a plurality of directions different from each other. BACKGROUND

[0002] In recent years, a magnetic sensor using a magnetic resistance effect element is utilized in various uses. In a system including the magnetic sensor, it is sometimes intended to detect a magnetic field including a component in a direction perpendicular to a surface of a substrate by the magnetic resistance effect element provided on the substrate. In this case, by providing a soft magnetic body that converts a magnetic field in the direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by disposing the magnetic resistance effect element on an inclined surface formed on the substrate, it is possible to detect the magnetic field including the component in the direction perpendicular to the surface of the substrate.

[0003] In Japanese Patent Application Publication No. 2006-261401, a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate is disclosed. A magnetic resistance effect element constituting the Z-axis sensor is provided on an inclined surface of a protruding portion formed on a base film of the substrate.

[0004] In the magnetic sensor in which the magnetic resistance effect element is disposed on the inclined surface, the soft magnetic body that converts the magnetic field is not required. However, the soft magnetic body sometimes functions as a shield. That is, the soft magnetic body sometimes is configured to have a function of hardly attenuating a magnetic field in a direction to be detected, but shielding or attenuating a magnetic field in a direction different from the direction to be detected. Therefore, in the magnetic sensor in which such a soft magnetic body or a shield is not provided, the sensitivity of the magnetic resistance effect element varies depending on the magnetic field in the direction different from the direction to be detected, and as a result, the detection accuracy of the magnetic sensor is sometimes reduced. SUMMARY

[0005] An object of the present application is to provide a magnetic sensor device capable of reducing an error caused by a magnetic field other than a magnetic field to be detected in a magnetic sensor device configured to detect a plurality of magnetic fields in a plurality of directions different from each other.

[0006] The magnetic sensor device of the present application includes a first detection circuit configured to detect a component in one direction of a magnetic field to be detected as an object magnetic field, and generate a first detection signal, a second detection circuit configured to detect a component in another direction of the object magnetic field, and generate a second detection signal, and a processor.

[0007] The processor is configured to execute: first generation processing of generating a first initial detection value using a first detection signal; second generation processing of generating a second initial detection value using a second detection signal; first correction processing of correcting the first initial detection value using a second correction value generated based on the latest second initial detection value, and updating the first initial detection value; second correction processing of correcting the second initial detection value using a first correction value generated based on the latest first initial detection value, and updating the second initial detection value; and determination processing of determining the latest first initial detection value as a first detection value having a correspondence relationship with a component of an object magnetic field parallel to a first reference direction, and determining the latest second initial detection value as a second detection value having a correspondence relationship with a component of the object magnetic field parallel to a second reference direction. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.

[0008] In the magnetic sensor device of the present application, the processor executes the determination processing after alternately executing the first correction processing and the second correction processing. Thus, according to the present application, it is possible to reduce an error caused by a magnetic field other than a magnetic field of a detection object.

[0009] Other objects, features and advantages of the present application will become more fully apparent from the following description and appended claims, and will be pointed out in the description. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a perspective view showing a magnetic sensor device of a first embodiment of the present application.

[0011] Figure 2 is a plan view showing the magnetic sensor device of the first embodiment of the present application.

[0012] Figure 3 is a functional block diagram showing a structure of the magnetic sensor device of the first embodiment of the present application.

[0013] Figure 4 is a circuit diagram showing a circuit structure of a first detection circuit of the first embodiment of the present application.

[0014] Figure 5 is a circuit diagram showing a circuit structure of a second detection circuit of the first embodiment of the present application.

[0015] Figure 6 is a circuit diagram showing a circuit structure of a third detection circuit of the first embodiment of the present application.

[0016] Figure 7 is a plan view showing a part of a first chip of the first embodiment of the present application.

[0017] Figure 8is a cross-sectional view showing a portion of the first chip of the first embodiment of the present application.

[0018] Figure 9 is a plan view showing a portion of the second chip of the first embodiment of the present application.

[0019] Figure 10 is a cross-sectional view showing a portion of the second chip of the first embodiment of the present application.

[0020] Figure 11 is a side view showing the magnetoresistive effect element of the first embodiment of the present application.

[0021] Figure 12 is a functional block diagram showing the structure of the processor of the first embodiment of the present application.

[0022] Figure 13 is a circuit diagram showing the circuit structure of the first detection circuit of the second embodiment of the present application.

[0023] Figure 14 is a circuit diagram showing the circuit structure of the second detection circuit of the second embodiment of the present application.

[0024] Figure 15 is a circuit diagram showing the circuit structure of the third detection circuit of the second embodiment of the present application.

[0025] Figure 16 is a functional block diagram showing the structure of the magnetic sensor device of the third embodiment of the present application.

[0026] Figure 17 is a circuit diagram showing the circuit structure of the first detection circuit of the third embodiment of the present application.

[0027] Figure 18 is a circuit diagram showing the circuit structure of the second detection circuit of the third embodiment of the present application.

[0028] Figure 19 is a circuit diagram showing the circuit structure of the third detection circuit of the third embodiment of the present application.

[0029] Figure 20 is a perspective view showing the plurality of magnetoresistive effect elements and the plurality of magnetic yokes of the third embodiment of the present application.

[0030] Figure 21 is a side view showing the plurality of magnetoresistive effect elements and the plurality of magnetic yokes of the third embodiment of the present application.

[0031] Figure 22 is a functional block diagram showing the structure of the processor of the third embodiment of the present application. DETAILED DESCRIPTION

[0032] [First Embodiment]

[0033] Hereinafter, an embodiment of the present application will be described in detail with reference to the drawings. First, the structure of a magnetic sensor device according to a first embodiment of the present application will be described with reference to Figures 1-3 Figure 1 is a perspective view showing the magnetic sensor device 100. Figure 2 is a plan view showing the magnetic sensor device 100. Figure 3 is a functional block diagram showing the structure of the magnetic sensor device 100. The magnetic sensor device 100 is provided with a first chip 2, a second chip 3, and a support 4 that supports the first and second chips 2, 3. The magnetic sensor 1 is constituted by the first chip 2 and the second chip 3. The first chip 2, the second chip 3, and the support 4 each have a cuboid shape. The support 4 has a reference plane 4a as an upper surface, a lower surface on the opposite side from the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0034] The magnetic sensor device 100 is provided with a first chip 2, a second chip 3, and a support 4 that supports the first and second chips 2, 3. The magnetic sensor 1 is constituted by the first chip 2 and the second chip 3. The first chip 2, the second chip 3, and the support 4 each have a cuboid shape. The support 4 has a reference plane 4a as an upper surface, a lower surface on the opposite side from the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0035] Here, the reference coordinate system of the present embodiment will be described with reference to Figure 1 and Figure 2 The reference coordinate system is a coordinate system that takes the magnetic sensor device 100 as a reference, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In the present embodiment, in particular, the direction perpendicular to the reference plane 4a of the support 4, that is, the direction from the lower surface of the support 4 toward the reference plane 4a is set as the Z direction. In addition, the direction opposite to the X direction is set as the -X direction, the direction opposite to the Y direction is set as the -Y direction, and the direction opposite to the Z direction is set as the -Z direction. The three axes that define the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0036] Hereinafter, the position in the front direction of the Z direction with respect to the reference will be referred to as the "upper side", and the position on the opposite side from the "upper side" with respect to the reference will be referred to as the "lower side". In addition, for the constituent elements of the magnetic sensor device 100, the surface located at one end in the Z direction will be referred to as the "upper surface", and the surface located at one end in the -Z direction will be referred to as the "lower surface". In addition, the expression "when viewed in the Z direction" means viewing the object from a position apart in the Z direction.

[0037] ​The first chip 2 has an upper surface 2a and a lower surface on opposite sides of each other and four side surfaces connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface on opposite sides of each other and four side surfaces connecting the upper surface 3a and the lower surface.

[0038] The first chip 2 is mounted on the reference plane 4a in a posture in which the lower surface of the first chip 2 opposes the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a in a posture in which the lower surface of the second chip 3 opposes the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are joined to the support 4 by, for example, adhesives 6, 7, respectively.

[0039] The first chip 2 has a plurality of first electrode pads 21 provided on the upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on the upper surface 3a. The support 4 has a plurality of third electrode pads provided on the reference plane 4a. Although not shown, in the magnetic sensor device 100, corresponding two electrode pads among the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads are connected to each other by bonding wires.

[0040] Here, the dimension of the direction perpendicular to the reference plane 4a is referred to as the thickness. As shown in FIG. 1, the thickness of the first chip 2 and the thickness of the second chip 3 can be the same. Alternatively, the thickness of the support 4 can be greater than the thickness of the first chip 2 and the thickness of the second chip 3. Figure 1

[0041] The magnetic sensor 1 includes a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30. Since the magnetic sensor 1 is a constituent element of the magnetic sensor device 100, it can also be said that the magnetic sensor device 100 includes the first to third detection circuits 10, 20, 30.

[0042] The magnetic sensor device 100 further includes a processor 40. The support 4 includes the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via the plurality of first electrode pads 21, the plurality of second electrode pads 31, the plurality of third electrode pads, and the plurality of bonding wires.

[0043] The first to third detection circuits 10, 20, 30 each include a plurality of magnetic detection elements and are configured to generate at least one detection signal by detecting an object magnetic field. In the present embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistance effect elements. Hereinafter, the magnetoresistance effect elements are referred to as MR elements.

[0044] ​The processor 40 is configured to generate first, second, and third detection values having a corresponding relationship with components in three directions different from each other of a magnetic field at a prescribed reference position, by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, 30. In the present embodiment, the three directions different from each other are two directions parallel to the XY plane and one direction parallel to the Z direction. The processor 40 is configured by, for example, an application specific integrated circuit (ASIC).

[0045] Next, the first to third detection circuits 10, 20, 30 will be described with reference to Figures 3-10 Figure 4 is a circuit diagram showing a circuit structure of the first detection circuit 10. Figure 5 is a circuit diagram showing a circuit structure of the second detection circuit 20. Figure 6 is a circuit diagram showing a circuit structure of the third detection circuit 30. Figure 7 is a plan view showing a part of the first chip 2. Figure 8 is a sectional view showing a part of the first chip 2. Figure 9 is a plan view showing a part of the second chip 3. Figure 10 is a sectional view showing a part of the second chip 3.

[0046] Here, as shown in Figure 7 and Figure 9 The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is a direction rotated from the Y direction toward the X direction. In the present embodiment, in particular, the U direction is set to a direction rotated by a from the X direction toward the -Y direction, and the V direction is set to a direction rotated by a from the Y direction toward the X direction. Further, a is an angle larger than 0° and smaller than 90°. In one example, a is 45°. In addition, the direction opposite to the U direction is set to the -U direction, and the direction opposite to the V direction is set to the -V direction.

[0047] In the present embodiment, the U direction corresponds to the "first reference direction" of the present application. In addition, in the present embodiment, the V direction corresponds to the "second reference direction" of the present application. Both the first reference direction (U direction) and the second reference direction (V direction) are parallel to the reference plane 4a and orthogonal to each other.

[0048] In addition, as shown in Figure 10 ​As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0049] The first detection circuit 10 is configured to detect the component of the object's magnetic field parallel to the U direction and generate at least one first detection signal corresponding to that component. The second detection circuit 20 is configured to detect the component of the object's magnetic field parallel to the W1 direction and generate at least one second detection signal corresponding to that component. The third detection circuit 30 is configured to detect the component of the object's magnetic field parallel to the W2 direction and generate at least one third detection signal corresponding to that component.

[0050] like Figure 4 As shown, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistors R11, R12, R13, and R14.

[0051] The first and second resistors R11 and R12 are connected along the path that electrically connects the first node P11 and the second node P12, i.e., the first path. Figure 4 The third and fourth resistors R13 and R14 are connected in series on the other path that electrically connects the first node P11 and the second node P12, i.e., the second path (…). Figure 4 Connected in series on the path on the right side of the text.

[0052] The first and fourth resistors, R11 and R14, are connected to the first node P11. The second and third resistors, R12 and R13, are connected to the second node P12. The first node P11 is connected to the power supply terminal V1. The second node P12 is connected to the ground terminal G1. The connection point of the first resistor R11 and the second resistor R12 is connected to the signal output terminal E11. The connection point of the third resistor R13 and the fourth resistor R14 is connected to the signal output terminal E12.

[0053] like Figure 5As shown, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0054] The circuit structure of the second detection circuit 20 is basically the same as that of the first detection circuit 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14 and nodes P11, P12 in the description of the circuit structure of the first detection circuit 10 are replaced with the power supply terminal V2, ground terminal G2, signal output terminals E21, E22, resistors R21, R22, R23, R24 and nodes P21, P22 respectively, then the circuit structure of the second detection circuit 20 is described.

[0055] like Figure 6 As shown, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0056] The circuit structure of the third detection circuit 30 is basically the same as that of the first detection circuit 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14 and nodes P11, P12 in the description of the circuit structure of the first detection circuit 10 are replaced with the power supply terminal V3, ground terminal G3, signal output terminals E31, E32, resistors R31, R32, R33, R34 and nodes P31, P32 respectively, then the circuit structure of the third detection circuit 30 is described.

[0057] Apply a specified voltage or current to each of the power supply terminals V1 to V3. Grounding terminals G1 to G3 are each grounded.

[0058] Hereinafter, the plurality of MR elements in the first detection circuit 10 will be referred to as a plurality of first MR elements 50A, the plurality of MR elements in the second detection circuit 20 will be referred to as a plurality of second MR elements 50B, and the plurality of MR elements in the third detection circuit 30 will be referred to as a plurality of third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are constituent elements of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50A, a plurality of second MR elements 50B, and a plurality of third MR elements 50C. Furthermore, any MR element will be designated by the symbol 50.

[0059] Figure 11 is a side view of the MR element 50. The MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 52 having a magnetization with a fixed direction, a free layer 54 having a magnetization with a direction that can change according to the direction of an object magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 can be a TMR (tunneling magnetoresistance) element, or a GMR (giant magnetoresistance) element. In the TMR element, the gap layer 53 is a tunnel barrier layer. In the GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle that the direction of the magnetization of the free layer 54 makes with respect to the direction of the magnetization of the magnetization fixed layer 52, and the resistance value becomes the minimum value when the angle is 0°, and the resistance value becomes the maximum value when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy in which the easy axis direction becomes a direction orthogonal to the direction of the magnetization of the magnetization fixed layer 52. In addition, as a method of setting the easy axis in the free layer 54 in a prescribed direction, a magnet that applies a bias magnetic field to the free layer 54 can also be used.

[0060] The MR element 50 also has an anti-ferromagnetic layer 51. The anti-ferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are sequentially stacked. The anti-ferromagnetic layer 51 is composed of an anti-ferromagnetic material, and generates exchange coupling with the magnetization fixed layer 52, fixing the direction of the magnetization of the magnetization fixed layer 52. In addition, the magnetization fixed layer 52 can also be a so-called self-pinned type fixed layer (Synthetic Ferri Pinned (SFP) layer). The self-pinned type fixed layer has a laminated iron structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and is formed so that the two ferromagnetic layers are coupled anti-ferromagnetically. In the case where the magnetization fixed layer 52 is a self-pinned type fixed layer, the anti-ferromagnetic layer 51 can also be omitted.

[0061] In addition, the configuration of the layers 51 to 54 in the MR element 50 can also be reversed upside down from the configuration shown in Figure 11

[0062] In Figures 4-6 , the solid arrow indicates the direction of the magnetization of the magnetization fixed layer 52 of the MR element 50. In addition, the hollow arrow indicates the direction of the magnetization of the free layer 54 of the MR element 50 when no object magnetic field is applied to the MR element 50.

[0063] ​Here, the first magnetization direction, the second magnetization direction, the third magnetization direction, and the fourth magnetization direction are defined as follows: The first magnetization direction is a direction that intersects an axis parallel to the Z-direction (hereinafter referred to as the Z-axis). The second magnetization direction is a direction that intersects the Z-axis, i.e., a direction opposite to the first magnetization direction. The third magnetization direction is a direction that intersects the Z-axis, i.e., a direction orthogonal to the first magnetization direction. The fourth magnetization direction is a direction that intersects the Z-axis, i.e., a direction opposite to the third magnetization direction.

[0064] In the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. Figure 4 In the example shown, the magnetization of the magnetization fixing layer 52 in each of the first and third resistor sections R11 and R13 includes a component in the first magnetization direction (U direction). The magnetization of the magnetization fixing layer 52 in each of the second and fourth resistor sections R12 and R14 includes a component in the second magnetization direction (-U direction).

[0065] In addition, Figure 4 In the example shown, when no target magnetic field is applied to the first MR element 50A, the magnetization of the free layer 54 in each of the first and second resistive sections R11 and R12 includes a component in the third magnetization direction (V direction). When no target magnetic field is applied to the first MR element 50A, the magnetization of the free layer 54 in each of the third and fourth resistive sections R13 and R14 includes a component in the fourth magnetization direction (-V direction).

[0066] Furthermore, when the magnetization of the magnetization fixing layer 52 includes a component with a specific magnetization direction, this component with the specific magnetization direction may also be the principal component of the magnetization of the magnetization fixing layer 52. Alternatively, the magnetization of the magnetization fixing layer 52 may not contain a component with a direction orthogonal to the specific magnetization direction. In this embodiment, when the magnetization of the magnetization fixing layer 52 includes a component with a specific magnetization direction, the direction of the magnetization of the magnetization fixing layer 52 becomes a specific magnetization direction or a substantially specific magnetization direction.

[0067] Similarly, if the magnetization of the free layer 54 without applying an object magnetic field includes a component of a specific magnetization direction, that component of the specific magnetization direction may also be the principal component of the magnetization of the free layer 54. Alternatively, the magnetization of the free layer 54 in the above-described case may not contain a component of a direction orthogonal to the specific magnetization direction. In this embodiment, when the magnetization of the free layer 54 in the above-described case includes a component of a specific magnetization direction, the direction of the magnetization of the free layer 54 in the above-described case becomes a specific magnetization direction or a substantially specific magnetization direction.

[0068] The first detection circuit 10 is configured such that the magnetization of the free layer 54 becomes the direction described above in a case where no object magnetic field is applied to the first detection circuit 10. Specifically, the free layer 54 of each of the plurality of first MR elements 50A of the first detection circuit 10 has a shape anisotropy in which the easy magnetization axis direction becomes a direction parallel to the third magnetization direction (V direction). Further, the direction parallel to the third magnetization direction (V direction) is also a direction parallel to the fourth magnetization direction (-V direction).

[0069] In the second detection circuit 20, the first magnetization direction is the W1 direction, the second magnetization direction is the -W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. If the description of the direction of the magnetization of the magnetization fixing layer 52 and the direction of the magnetization of the free layer 54 in the first detection circuit 10 is replaced with the second detection circuit 20, the resistance portions R21, R22, R23, R24, the second MR element 50B, the W1 direction, the -W1 direction, the U direction, and the -U direction, respectively, the description of the direction of the magnetization of the magnetization fixing layer 52 and the direction of the magnetization of the free layer 54 in the second detection circuit 20 becomes as described below.

[0070] In the third detection circuit 30, the first magnetization direction is the W2 direction, the second magnetization direction is the -W2 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. If the description of the direction of the magnetization of the magnetization fixing layer 52 and the direction of the magnetization of the free layer 54 in the first detection circuit 10 is replaced with the third detection circuit 30, the resistance portions R31, R32, R33, R34, the third MR element 50C, the W2 direction, the -W2 direction, the U direction, and the -U direction, respectively, the description of the direction of the magnetization of the magnetization fixing layer 52 and the direction of the magnetization of the free layer 54 in the third detection circuit 30 becomes as described below.

[0071] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a prescribed direction to the free layer 54 of each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C. In the present embodiment, the magnetic field generator includes a first coil 70 configured to apply a magnetic field in a prescribed direction to the free layer 54 of each of the first MR elements 50A, and a second coil 80 configured to apply a magnetic field in a prescribed direction to the free layer 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. The first chip 2 includes the first coil 70. The second chip 3 includes the second coil 80.

[0072] The detailed configuration of the first chip 2 and the second chip 3 will be described below. First, the configuration of the first chip 2 will be described with reference to Figure 7 and Figure 8 The configuration of the first chip 2 will be described. Figure 8 part of the cross section at the position indicated by the line 8-8 in Figure 7

[0073] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72. The upper surface 201a of the substrate 201 is provided to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201. Further, the coil element is a part of the winding of a coil.

[0074] The insulating layer 202 is disposed on the substrate 201. The plurality of lower coil elements 71 is disposed on the insulating layer 202. The insulating layer 203 is disposed on the insulating layer 202 around the plurality of lower coil elements 71. The insulating layer 204 is disposed on the plurality of lower coil elements 71 and the insulating layer 203.

[0075] The plurality of lower electrodes 61A is disposed on the insulating layer 204. The insulating layer 207 is disposed on the insulating layer 204 around the plurality of lower electrodes 61A. The plurality of first MR elements 50A is disposed on the plurality of lower electrodes 61A. The insulating layer 208 is disposed on the plurality of lower electrodes 61A and the insulating layer 207 around the plurality of first MR elements 50A. The plurality of upper electrodes 62A is disposed on the plurality of first MR elements 50A and the insulating layer 208. The insulating layer 209 is disposed on the insulating layer 208 around the plurality of upper electrodes 62A.

[0076] The insulating layer 210 is disposed on the plurality of upper electrodes 62A and the insulating layer 209. The plurality of upper coil elements 72 is disposed on the insulating layer 210. The first chip 2 can further include an insulating layer not shown that covers the plurality of upper coil elements 72 and the insulating layer 210. Further, in Figure 7 , the insulating layer 204, the plurality of first MR elements 50A, and the plurality of upper coil elements 72 among the constituent elements of the first chip 2 are shown.

[0077] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surface of each of the plurality of lower electrodes 61A is also parallel to the XY plane. Therefore, in the above state, it can be said that the plurality of first MR elements 50A is disposed on a plane parallel to the XY plane.

[0078] As Figure 7 ​As shown, the plurality of first MR elements 50A are arranged in a manner that a plurality of each are arranged in the U direction and the V direction, respectively. The plurality of first MR elements 50A are connected in series through the plurality of lower electrodes 61A and the plurality of upper electrodes 62A. Further, when viewed from the Z direction, the two first MR elements 50A adjacent to each other can be staggered in a direction parallel to the V direction, or can not be staggered.

[0079] Here, the connection method of the plurality of first MR elements 50A will be described in detail with reference to Figure 11 Figure 11 In Figure 11 , the symbol 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and the symbol 62 denotes an upper electrode corresponding to an arbitrary MR element 50. As shown in , each of the lower electrodes 61 has an elongated shape. A gap is formed between the two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrode 61. On the upper surface of the lower electrode 61, the MR element 50 is disposed near each of the both ends in the longitudinal direction. Further, each of the upper electrodes 62 has an elongated shape, and the two MR elements 50 disposed on the two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrode 61 are electrically connected to each other.

[0080] Although not shown, one MR element 50 located at one end of a column of the plurality of MR elements 50 arranged in a column is connected to another MR element 50 located at one end of a column of the other plurality of MR elements 50 adjacent to each other in a direction intersecting the longitudinal direction of the lower electrode 61. The two MR elements 50 are connected to each other by an electrode not shown. The electrode not shown can be an electrode connecting the lower surfaces of the two MR elements 50 to each other or the upper surfaces of the two MR elements 50 to each other.

[0081] Figure 11 In the case where the MR element 50 shown in Figure 11 corresponds to the lower electrode 61A, Figure 11 corresponds to the upper electrode 62A. Further, in this case, the longitudinal direction of the lower electrode 61 becomes a direction parallel to the V direction.

[0082] Further, in the present embodiment, a laminated film including the antiferromagnetic layer 51, the magnetization fixing layer 52, the gap layer 53, and the free layer 54 is described as the MR element 50. However, a member provided with the laminated film, the lower electrode 61, and the upper electrode 62 can be described as the MR element in the present embodiment. The laminated film includes a plurality of magnetic films.

[0083] ​Each of the plurality of upper coil elements 72 extends in a direction parallel to the Y direction. Furthermore, the plurality of upper coil elements 72 are arranged in a manner aligned along the X direction. In this embodiment, particularly when viewed from the Z direction, two upper coil elements 72 overlap with each of the plurality of first MR elements 50A.

[0084] Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 71 are arranged in a manner aligned along the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72.

[0085] exist Figure 7 and Figure 8 In the example shown, multiple lower coil elements 71 and multiple upper coil elements 72 are electrically connected in such a way that they form a first coil 70 that applies a magnetic field parallel to the X-direction to the free layers 54 of each of the multiple first MR elements 50A. Alternatively, the first coil 70 may be configured to, for example, apply an X-direction magnetic field to the free layers 54 in the first and second resistive sections R11 and R12, and an -X-direction magnetic field to the free layers 54 in the third and fourth resistive sections R13 and R14. Furthermore, the first coil 70 may also be controlled by the processor 40.

[0086] Next, refer to Figure 9 and Figure 10 The structure of the second chip 3 will be explained. Figure 10 Indicates in Figure 9 A portion of the cross section at the location indicated by the 10-10 line.

[0087] The second chip 3 includes a substrate 301 with an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, and 310, multiple lower electrodes 61B and 61C, multiple upper electrodes 62B and 62C, multiple lower coil elements 81, and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301.

[0088] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304 and 305 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0089] The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are arranged above the insulating layer 305. The insulating layer 307 is arranged above the insulating layer 305 around the plurality of lower electrodes 61B and around the plurality of lower electrodes 61C. The plurality of second MR elements 50B is arranged above the plurality of lower electrodes 61B. The plurality of third MR elements 50C is arranged above the plurality of lower electrodes 61C. The insulating layer 308 is arranged above the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 307 around the plurality of second MR elements 50B and around the plurality of third MR elements 50C. The plurality of upper electrodes 62B is arranged above the plurality of second MR elements 50B and the insulating layer 308. The plurality of upper electrodes 62C is arranged above the plurality of third MR elements 50C and the insulating layer 308. The insulating layer 309 is arranged above the insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

[0090] The insulating layer 310 is arranged above the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 309. The plurality of upper coil elements 82 is arranged above the insulating layer 310. The second chip 3 can further include an insulating layer not shown that covers the plurality of upper coil elements 82 and the insulating layer 310.

[0091] The second chip 3 includes a support member that supports the plurality of second MR elements 50B and the plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In the present embodiment, in particular, the support member is constituted by the insulating layer 305. Further, in the present embodiment, the support member is constituted by the insulating layer 307 and the insulating layer 308. Figure 9 In the present embodiment, among the constituent elements of the second chip 3, the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 are shown.

[0092] The insulating layer 305 has a plurality of convex surfaces 305c that respectively extend in a direction (Z direction) away from the upper surface 301a of the substrate 301. The plurality of convex surfaces 305c each extend in a direction parallel to the U direction. The overall shape of the convex surface 305c is a triangular shape that is shifted along a direction parallel to the U direction from the triangular shape shown in FIG. 17. Figure 10 The triangular shape of the convex surface 305c shown in FIG. 17 is shifted along a direction parallel to the U direction to a triangular roof shape. In addition, the plurality of convex surfaces 305c are arranged in a direction parallel to the V direction.

[0093] Each of the plurality of convex surfaces 305c has an upper end portion farthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portion of each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. Here, attention is directed to an arbitrary one of the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface of the convex surface 305c on the V direction side from the upper end portion of the convex surface 305c. The second inclined surface 305b is a surface of the convex surface 305c on the -V direction side from the upper end portion of the convex surface 305c. The upper end portion of the convex surface 305c can also be a boundary between the first inclined surface 305a and the second inclined surface 305b.

[0094] The upper surface 301a of the substrate 301 is parallel to the XY plane. Each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the interval between the first inclined surface 305a and the second inclined surface 305b decreases as it moves away from the upper surface 301a of the substrate 301.

[0095] In this embodiment, because there are a plurality of convex surfaces 305c, there are also a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b, respectively. The insulating layer 305 has a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b.

[0096] The insulating layer 305 includes a plurality of protruding portions each protruding in the Z direction. The plurality of protruding portions each extend in a direction parallel to the U direction. The convex surface 305c is constituted by an upper surface of the insulating layer 305. In addition, the plurality of protruding portions are arranged in a direction parallel to the V direction.

[0097] The plurality of lower electrodes 61B are arranged over the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are arranged over the plurality of second inclined surfaces 305b. As described above, because each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surface of each of the plurality of lower electrodes 61B and the upper surface of each of the plurality of lower electrodes 61C are also inclined with respect to the XY plane. Thus, it can be said that the plurality of second MR elements 50B and the plurality of third MR elements 50C are arranged on inclined surfaces inclined with respect to the XY plane. The insulating layer 305 is a component for supporting each of the plurality of second MR elements 50B and the plurality of third MR elements 50C in a manner inclined with respect to the XY plane.

[0098] In this embodiment, each of the plurality of first inclined surfaces 305a is a plane parallel to the U direction and the W1 direction. Each of the plurality of second inclined surfaces 305b is a plane parallel to the U direction and the W2 direction.

[0099] Although not shown, the insulating layer 305 also has a flat surface surrounding the plurality of convex surfaces 305c. The plurality of convex surfaces 305c may also protrude from the flat surface in the Z direction. Alternatively, the plurality of convex surfaces 305c may be arranged at predetermined intervals such that a flat surface is formed between adjacent convex surfaces 305c. Alternatively, the insulating layer 305 may also have a groove recessed from the flat surface in the -Z direction. In this case, the plurality of convex surfaces 305c may also exist within the groove.

[0100] Alternatively, the convex surface 305c can also be a semi-cylindrical curved surface formed by moving the curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a becomes a curved surface. The second MR element 50B is bent along the curved surface (first inclined surface 305a). Even in this case, for convenience, the magnetization direction of the magnetization fixing layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b becomes a curved surface. The third MR element 50C is bent along the curved surface (second inclined surface 305b). Even in this case, for convenience, the magnetization direction of the magnetization fixing layer 52 of the third MR element 50C is defined as a linear direction as described above.

[0101] like Figure 9 As shown, a plurality of second MR elements 50B are arranged in multiples along both the U and V directions. On a first inclined surface 305a, the plurality of second MR elements 50B are arranged in a column. Similarly, a plurality of third MR elements 50C are arranged in multiples along both the U and V directions. On a second inclined surface 305b, a plurality of third MR elements 50C are arranged in a column. In this embodiment, the columns of the plurality of second MR elements 50B and the columns of the plurality of third MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0102] Furthermore, when viewed from the Z direction, adjacent second MR elements 50B and third MR elements 50C can be offset along a direction parallel to the U direction, or they can be offset directly. Additionally, when viewed from the Z direction, two adjacent second MR elements 50B separated by one third MR element 50C can also be offset along a direction parallel to the U direction, or they can be offset directly. Furthermore, when viewed from the Z direction, two adjacent third MR elements 50C separated by one second MR element 50B can also be offset along a direction parallel to the U direction, or they can be offset directly.

[0103] Multiple second MR elements 50B are connected in series via multiple lower electrodes 61B and multiple upper electrodes 62B. The above description of the connection method for multiple first MR elements 50A also applies to the connection method for multiple second MR elements 50B. Figure 11In a case where the illustrated MR element 50 is the second MR element 50B, Figure 11 The illustrated lower electrode 61 corresponds to the lower electrode 61B. Figure 11 The illustrated upper electrode 62 corresponds to the upper electrode 62B. In this case, the long side direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0104] Similarly, the plurality of third MR elements 50C are connected in series by a plurality of lower electrodes 61C and a plurality of upper electrodes 62C. The above description regarding the connection method of the plurality of first MR elements 50A also applies to the connection method of the plurality of third MR elements 50C. In Figure 11 In a case where the illustrated MR element 50 is the third MR element 50C, Figure 11 The illustrated lower electrode 61 corresponds to the lower electrode 61C. Figure 11 The illustrated upper electrode 62 corresponds to the upper electrode 62C. In this case, the long side direction of the lower electrode 61 becomes a direction parallel to the U direction.

[0105] The plurality of upper coil elements 82 each extend in a direction parallel to the Y direction. In addition, the plurality of upper coil elements 82 are arranged in a manner arranged along the X direction. In the present embodiment, in particular, when viewed from the Z direction, two upper coil elements 82 overlap each of the plurality of second MR elements 50B and the plurality of third MR elements 50C.

[0106] The plurality of lower coil elements 81 each extend in a direction parallel to the Y direction. In addition, the plurality of lower coil elements 81 are arranged in a manner arranged along the X direction. The shape and arrangement of the plurality of lower coil elements 81 can be the same as or different from the shape and arrangement of the plurality of upper coil elements 82.

[0107] In a case where the illustrated MR element 50 is the second MR element 50B, Figure 9 and Figure 10 In the illustrated example, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are electrically connected in a manner that constitutes a second coil 80 that applies a magnetic field in a direction parallel to the X direction to the free layer 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. In addition, the second coil 80 can be configured to, for example, apply a magnetic field in the X direction to the free layer 54 in the first and second resistance portions R21, R22 of the second detection circuit 20 and the first and second resistance portions R31, R32 of the third detection circuit 30, and apply a magnetic field in the -X direction to the free layer 54 in the third and fourth resistance portions R23, R24 of the second detection circuit 20 and the third and fourth resistance portions R33, R34 of the third detection circuit 30. In addition, the second coil 80 can be controlled by the processor 40.

[0108] Next, the first to third detection signals will be described. First, referring toFigure 4 The first detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the U direction changes, the resistance values of the resistance portions R11 to R14 of the first detection circuit 10 each change in such a manner that the resistance values of the resistance portions R11, R13 increase while the resistance values of the resistance portions R12, R14 decrease, or the resistance values of the resistance portions R12, R14 increase while the resistance values of the resistance portions R11, R13 decrease. Thereby, the potentials of the signal output terminals E11, E12 each change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11 and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0109] Next, the second detection signal will be described with reference to FIG. 4. Figure 5 The second detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the W1 direction changes, the resistance values of the resistance portions R21 to R24 of the second detection circuit 20 each change in such a manner that the resistance values of the resistance portions R21, R23 increase while the resistance values of the resistance portions R22, R24 decrease, or the resistance values of the resistance portions R22, R24 increase while the resistance values of the resistance portions R21, R23 decrease. Thereby, the potentials of the signal output terminals E21, E22 each change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21 and to generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0110] Next, the third detection signal will be described with reference to FIG. 5. Figure 6 The third detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistance portions R31 to R34 of the third detection circuit 30 each change in such a manner that the resistance values of the resistance portions R31, R33 increase while the resistance values of the resistance portions R32, R34 decrease, or the resistance values of the resistance portions R32, R34 increase while the resistance values of the resistance portions R31, R33 decrease. Thereby, the potentials of the signal output terminals E31, E32 each change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31 and to generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0111] Next, the structure and operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11, S12 and to generate a second detection value and a third detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. The first detection value is a detection value corresponding to a component of the object magnetic field in a direction parallel to the U direction. The second detection value is a detection value corresponding to a component of the object magnetic field in a direction parallel to the V direction. The third detection value is a detection value corresponding to a component of the object magnetic field in a direction parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Su, the second detection value will be denoted by the symbol Sv, and the third detection value will be denoted by the symbol Sz.

[0112] Figure 12 is a functional block diagram representing the structure of the processor 40. The processor 40 includes a first operation circuit 41, a second operation circuit 42, and a correction circuit 43. The first operation circuit 41 is configured to perform a first generation process. The first generation process is a process of generating a first initial detection value Sup corresponding to the first detection value Su using the first detection signals S11, S12.

[0113] In the present embodiment, the first operation circuit 41 generates the first initial detection value Sup by including an operation of finding a difference S11-S12 of the first detection signal S11 and the first detection signal S12. The first initial detection value Sup can be the difference S11-S12 itself or a value to which a prescribed correction such as gain adjustment and offset adjustment is applied to the difference S11-S12.

[0114] The second operation circuit 42 is configured to perform at least a part of a second generation process. The second generation process includes a process of generating a second initial detection value Svp corresponding to the second detection value Sv and a process of generating a third initial detection value Szp corresponding to the third detection value Sz. In the process of generating the second initial detection value Svp, at least the second detection signals S21, S22 are used. In the present embodiment, the second detection signals S21, S22 and the third detection signals S31, S32 are used in either of the process of generating the second initial detection value Svp and the process of generating the third initial detection value Szp.

[0115] In the present embodiment, the second generation process includes a first process, a second process, and a third process. The first process is a process of generating a first value S1 using the second detection signals S21, S22. The second process is a process of generating a second value S2 using the third detection signals S31, S32. The third process is a process of generating the second initial detection value Svp and the third initial detection value Szp using the first value S1 and the second value S2.

[0116] In the present embodiment, the second arithmetic circuit 42, in particular, is configured to execute the first process and the second process. The first process is a process of generating the first value S1 by including an operation of finding a difference S21-S22 of the second detection signal S21 and the second detection signal S22. The second process is a process of generating the second value S2 by including an operation of finding a difference S31-S32 of the third detection signal S31 and the third detection signal S32.

[0117] The third process includes a process of calculating the values S3, S4 using the following equations (1), (2).

[0118] S3 = (S2 + S1) / (2 cos α)... (1)

[0119] S4 = (S2 - S1) / (2 sin α)... (2)

[0120] The third process also includes a process of generating the second and third initial detection values Svp, Szp using the values S3, S4. The second initial detection value Svp generated by the third process can be the value S3 itself, or a value to which a prescribed correction such as a gain adjustment and an offset adjustment is applied to the value S3. Similarly, the third initial detection value Szp generated by the third process can be the value S4 itself, or a value to which a prescribed correction such as a gain adjustment and an offset adjustment is applied to the value S4.

[0121] The correction circuit 43 generates the first to third detection values Su, Sv, Sz using the first to third initial detection values Sup, Svp, Szp. In the present embodiment, the correction circuit 43, in particular, is configured to execute the third process, the first correction process, the second correction process, and the determination process of the second generation process in order to generate the first to third detection values Su, Sv, Sz.

[0122] In the first correction process, the first initial detection value Sup is updated one or more times. Hereinafter, the last updated first initial detection value Sup will be referred to as the latest first initial detection value Sup. Also, for convenience, the first initial detection value Sup after the execution of the first generation process and before the execution of the first correction process for the first time will also be referred to as the latest first initial detection value Sup.

[0123] In the second correction process, the second initial detection value Svp and the third initial detection value Szp are each updated one or more times. Hereinafter, the last updated second initial detection value Svp will be referred to as the latest second initial detection value Svp, and the last updated third initial detection value Szp will be referred to as the latest third initial detection value Szp.

[0124] The first correction process is a process of correcting the first initial detection value Sup (the latest first initial detection value Sup) using the second correction value Svc generated based on the latest second initial detection value Svp and updating the first initial detection value Sup.

[0125] The second correction value Svc can also be a value calculated by an operation including multiplication of the latest second initial detection value Svp by a second correction coefficient. Hereinafter, the last calculated second correction value Svc is referred to as the latest second correction value Svc. The first correction process can also be a process of calculating (updating) the first initial detection value Sup by substituting the latest first initial detection value Sup and the latest second correction value Svc into an expression expressed using the first initial detection value Sup and the second correction value Svc. The above expression can also be an expression including a first operation including multiplication of the latest first initial detection value Sup by the second correction value Svc and a second operation of adding or subtracting a value obtained by the first operation to or from the latest first initial detection value Sup.

[0126] The second correction process is a process of correcting the second initial detection value Svp (the latest second initial detection value Svp) and the third initial detection value Szp (the latest third initial detection value Szp) using the first correction value Suc generated based on the latest first initial detection value Sup and updating the second and third initial detection values Svp, Szp. In the present embodiment, in particular, the second correction process includes a fourth process, a fifth process, and a sixth process. The fourth process is a process of correcting the first and second values S1, S2 using the first correction value Suc and updating the first and second values S1, S2. The fifth process is a process of generating the second and third initial detection values Svp, Szp using the latest first and second values S1, S2. The sixth process is a process of updating the second and third initial detection values Svp, Szp using the second and third initial detection values Svp, Szp generated by the fifth process. Further, the latest first value S1 means the first value S1 last updated. In addition, the latest second value S2 means the second value S2 last updated. For convenience, the first value S1 and the second value S2 after the execution of the first and second processes and before the execution of the first third process are also referred to as the latest first value S1 and the latest second value S2, respectively.

[0127] The content of the fifth process is substantially the same as that of the third process of the second generation process. That is, the second correction process substantially includes the third process of the second generation process. The fifth process includes a process of calculating the values S3, S4 using the latest first and second values S1, S2 and the expressions (1), (2) and a process of generating the second and third initial detection values Svp, Szp using the values S3, S4.

[0128] The first correction value Suc can also be a value calculated by an operation including the latest first initial detection value Sup multiplied by a first correction coefficient. Hereinafter, the last calculated first correction value Suc is referred to as the latest first correction value Suc. The fourth processing of the second correction processing can also be processing of calculating (updating) the first value S1 by substituting the latest first value S1 and the latest first correction value Suc into the first equation expressed using the first value S1 and the first correction value Suc, and calculating (updating) the second value S2 by substituting the latest second value S2 and the latest first correction value Suc into the second equation expressed using the second value S2 and the first correction value Suc. The first equation can also be an equation including a third operation including the latest first value S1 multiplied by the first correction value Suc, and a fourth operation of adding or subtracting a value obtained by the third operation to or from the latest first value S1. The second equation can also be an equation including a fifth operation including the latest second value S2 multiplied by the first correction value Suc, and a sixth operation of adding or subtracting a value obtained by the fifth operation to or from the latest second value S2.

[0129] The determination processing is processing of determining the latest first initial detection value Sup as the first detection value Su, determining the latest second initial detection value Svp as the second detection value Sv, and determining the latest third initial detection value Szp as the third detection value Sz. The correction circuit 43 executes the determination processing after the first correction processing and the second correction processing are alternately executed once or more. The correction circuit 43 can execute the first correction processing and the second correction processing each once, can execute them each twice, or can execute them each three or more times.

[0130] The correction circuit 43 can also execute the second correction processing first from the update of the second and third initial detection values Svp and Szp. That is, the correction circuit 43 can execute the first second correction processing before executing the first first correction processing.

[0131] The first second correction processing is executed after the first and second processing of the second generation processing is executed. In addition, as described above, the second correction processing substantially includes the third processing of the second generation processing. Therefore, by executing the first second correction processing, the second generation processing is substantially executed.

[0132] Furthermore, the structure of the processor 40 is not limited to Figure 12The first operation circuit 41, the second operation circuit 42, and the correction circuit 43 can be substantially one circuit. In this case, the one circuit can be configured to be capable of performing all the processes performed by the first operation circuit 41, the second operation circuit 42, and the correction circuit 43. Alternatively, instead of providing the correction circuit 43, the first operation circuit 41 can perform a part of the processes performed by the correction circuit 43 (the processes related to the first initial detection value Sup and the first detection value Su), and the second operation circuit 42 can perform the other part of the processes performed by the correction circuit 43 (the processes related to the second and third initial detection values Svp, Szp and the second and third detection values Sv, Sz). In this case, the first and second initial detection values Sup, Svp can be transmitted and received between the first operation circuit 41 and the second operation circuit 42.

[0133] Next, the effects of the series of processes performed by the correction circuit 43 will be described. First, the first to third detection circuits of the comparative example will be described. The structure of the first detection circuit of the comparative example is the same as that of the first detection circuit 10 shown in FIG. 1, except for the direction of the magnetization of the free layer 54 of each of the plurality of first MR elements 50A in the case where the object magnetic field is not applied to the plurality of first MR elements 50A. Figure 4 In the first detection circuit of the comparative example, in the above case, the direction of the magnetization of the free layer 54 is the V direction in all of the plurality of first MR elements 50A.

[0134] The structure of the second detection circuit of the comparative example is the same as that of the second detection circuit 20 shown in FIG. 2, except for the direction of the magnetization of the free layer 54 of each of the plurality of second MR elements 50B in the case where the object magnetic field is not applied to the plurality of second MR elements 50B. Figure 5 In the second detection circuit of the comparative example, in the above case, the direction of the magnetization of the free layer 54 is the U direction in all of the plurality of second MR elements 50B.

[0135] The structure of the third detection circuit of the comparative example is the same as that of the third detection circuit 30 shown in FIG. 3, except for the direction of the magnetization of the free layer 54 of each of the plurality of third MR elements 50C in the case where the object magnetic field is not applied to the plurality of third MR elements 50C. Figure 6 In the third detection circuit of the comparative example, in the above case, the direction of the magnetization of the free layer 54 is the U direction in all of the plurality of third MR elements 50C.

[0136] In the first detection circuit of the comparative example, a magnetic field in a direction parallel to the V direction (a component of the object magnetic field in a direction parallel to the V direction) substantially has an effect of changing an anisotropic magnetic field based on a shape anisotropy in which the easy magnetization axis direction becomes a direction parallel to the V direction. This anisotropic magnetic field acts on the magnetization of the free layer 54. Therefore, in the first detection circuit of the comparative example, the direction of the magnetization of the free layer 54 at the time of detecting the component of the object magnetic field in a direction parallel to the U direction changes depending on the presence or absence of the magnetic field in a direction parallel to the V direction or the change in the strength thereof. As a result, the first detection signals S11, S12 deviate from the first detection signals S11, S12 at the time of detecting the component of the object magnetic field in a direction parallel to the U direction in a state in which there is no magnetic field in a direction parallel to the V direction, and as a result, the difference S11-S12 which substantially corresponds to the first detection value Su also deviates.

[0137] In contrast to this, in the present embodiment, the direction of the magnetization of the free layer 54 is made different for each of the resistance portions. In the present embodiment, in particular, the direction of the magnetization of the free layer 54 is set so that the deviation of the first detection signals S11, S12 caused by the magnetic field in a direction parallel to the V direction can be canceled out when the difference S11-S12 is calculated. As a result, according to the present embodiment, the deviation of the difference S11-S12 caused by the magnetic field in a direction parallel to the V direction can be suppressed. As a result, according to the present embodiment, the error of the first detection value Su caused by the magnetic field in a direction parallel to the V direction can be reduced.

[0138] The above description of the first detection circuit of the comparative example also applies to the second and third detection circuits of the comparative example. In the second detection circuit of the comparative example, the second detection signals S21, S22 deviate from the second detection signals S21, S22 at the time of detecting the component of the object magnetic field in a direction parallel to the Wl direction in a state in which there is no magnetic field in a direction parallel to the U direction, and as a result, the first value S1 also deviates. In addition, in the third detection circuit of the comparative example, the third detection signals S31, S32 deviate from the third detection signals S31, S32 at the time of detecting the component of the object magnetic field in a direction parallel to the W2 direction in a state in which there is no magnetic field in a direction parallel to the U direction, and as a result, the second value S2 also deviates. Therefore, the value S3 which substantially corresponds to the second detection value Sv and the value S4 which substantially corresponds to the third detection value Sz also deviate. In contrast to this, according to the present embodiment, the deviation of the values S3, S4 caused by the magnetic field in a direction parallel to the U direction can be suppressed. As a result, according to the present embodiment, the error of the second and third detection values Sv, Sz caused by the magnetic field in a direction parallel to the U direction can be reduced.

[0139] The series of processes performed by the correction circuit 43 is a process for further suppressing the deviation of the difference S11-S12, i.e., the deviation of the first initial detection value Sup, the deviation of the value S3, i.e., the deviation of the second initial detection value Svp, and the deviation of the value S4, i.e., the deviation of the third initial detection value Szp, which are suppressed as described above. In the first correction process, the first initial detection value Sup is corrected using the second initial detection value Svp, which has a corresponding relationship with the strength of the component of the object magnetic field in the direction parallel to the V direction. It is possible to correct the first initial detection value Sup according to the presence or absence of the magnetic field in the direction parallel to the V direction or the change in the strength thereof by using the second initial detection value Svp. Specifically, because the second correction value Svc varies according to the presence or absence of the magnetic field in the direction parallel to the V direction or the change in the strength thereof, it is possible to correct the first initial detection value Sup with high precision.

[0140] The second correction coefficient or the expression represented by the first initial detection value Sup and the second correction value Svc described above can also be defined so that the correction amount of the first initial detection value Sup becomes larger as the deviation of the first initial detection value Sup becomes larger, and the sign of the correction amount of the first initial detection value Sup changes according to the case where the first initial detection value Sup deviates in a decreasing manner and the case where the first initial detection value Sup deviates in an increasing manner. For example, in the case where the first initial detection value Sup deviates in a decreasing manner, it is also possible to add the correction amount of the first initial detection value Sup, which corresponds to the decreasing amount of the first initial detection value Sup, to the first initial detection value Sup. In addition, in the case where the first initial detection value Sup deviates in an increasing manner, it is also possible to subtract the correction amount of the first initial detection value Sup, which corresponds to the increasing amount of the first initial detection value Sup, from the first initial detection value Sup.

[0141] The above description of the first correction process also applies to the second correction process. That is, in the second correction process, the first and second values S1, S2 are corrected using the first initial detection value Sup, which has a corresponding relationship with the strength of the component of the object magnetic field in the direction parallel to the U direction. Thus, in essence, the second and third initial detection values Svp, Szp are corrected using the first initial detection value Sup, which has a corresponding relationship with the strength of the component of the object magnetic field in the direction parallel to the U direction. It is possible to correct the first and second values S1, S2 (the second and third initial detection values Svp, Szp) according to the presence or absence of the magnetic field in the direction parallel to the U direction or the change in the strength thereof by using the first initial detection value Sup. Specifically, because the first correction value Suc varies according to the presence or absence of the magnetic field in the direction parallel to the U direction or the change in the strength thereof, it is possible to correct the first and second values S1, S2 (the second and third initial detection values Svp, Szp) with high precision.

[0142] The first correction coefficient or the first and second expressions described above can also be defined such that the correction amount of the second initial detection value Svp becomes larger as the deviation of the second initial detection value Svp becomes larger, and the sign of the correction amount of the second initial detection value Svp changes depending on whether the second initial detection value Svp deviates in a decreasing manner or in an increasing manner.

[0143] The first correction coefficient and the second correction coefficient can also be selected in advance to suppress the deviation of the first initial detection value Sup, the deviation of the second initial detection value Svp, and the deviation of the third initial detection value Szp. The first correction coefficient and the second correction coefficient can also be determined based on a plurality of measurement results using numerical analysis or the like.

[0144] Furthermore, if it is intended to apply the first and second correction processes to the first to third initial detection values Sup, Svp, and Szp generated by the first to third detection circuits of the comparative example, it is necessary to change the sign of the first and second correction coefficients or the content of the first and second correction processes depending on the direction of the applied magnetic field. In contrast, in the present embodiment, the same first and second correction processes can be applied regardless of the direction of the applied magnetic field, and the structure of the correction circuit 43 and the content of the first and second correction processes can be simplified.

[0145] However, as a method of suppressing the deviation of each of the first to third initial detection values Sup, Svp, and Szp, it is conceivable to provide a shield made of a magnetic material so that a magnetic field other than the detection object is not applied to each of the first to third detection circuits 10, 20, and 30. For example, it is conceivable to provide a shield in the first detection circuit 10, which is configured to hardly attenuate a magnetic field in a direction parallel to the U direction but to block or attenuate a magnetic field in a direction parallel to the V direction. Similarly, it is conceivable to provide a shield in the second and third detection circuits 20 and 30, which is configured to hardly attenuate a magnetic field in a direction parallel to the W1 direction and a magnetic field in a direction parallel to the W2 direction but to block or attenuate a magnetic field in a direction parallel to the U direction. However, in the present embodiment, a shield is not provided in each of the first to third detection circuits 10, 20, and 30 to suppress the deviation of each of the first to third initial detection values Sup, Svp, and Szp. Thus, according to the present embodiment, the structure of the magnetic sensor 1 can be simplified.

[0146] In addition, in the present embodiment, the first initial detection value Sup is generated using the first detection signals Sll, S12, which are generated by detecting a component of the object magnetic field in a direction parallel to the reference plane 4a, i.e., the XY plane (a component of the object magnetic field in a direction parallel to the U direction). The second and third initial detection values Svp, Szp are generated using the second detection signals S21, S22 and the third detection signals S31, S32, which are generated by detecting a component of the object magnetic field in one direction inclined with respect to the reference plane 4a, i.e., the XY plane (a component of the object magnetic field in a direction parallel to the Wl direction) and a component of the object magnetic field in the other direction inclined with respect to the reference plane 4a, i.e., the XY plane (a component of the object magnetic field in a direction parallel to the W2 direction). In this way, in the present embodiment, it is characterized that the deviation of each of the first to third initial detection values Sup, Svp, Szp generated by detecting the components of the object magnetic field in the directions parallel to the XY plane and the directions inclined with respect to the XY plane is suppressed.

[0147] Further, as described above, in the present embodiment, the detection value corresponding to the component of the object magnetic field in the direction parallel to the U direction (the first initial detection value Sup) is generated by detecting the component of the object magnetic field in the direction parallel to the U direction, but the detection value corresponding to the component of the object magnetic field in the direction parallel to the V direction (the second initial detection value Svp) is not generated by detecting the component of the object magnetic field in the direction parallel to the V direction, and the detection value corresponding to the component of the object magnetic field in the direction parallel to the Z direction (the third initial detection value Szp) is not generated by detecting the component of the object magnetic field in the direction parallel to the Z direction. Therefore, in the present embodiment, it is sometimes possible to generate the first initial detection value Sup with higher accuracy than the second and third initial detection values Svp, Szp. In this case, before the first correction process is performed, it is possible to update the first to third initial detection values Sup, Svp, Szp with higher accuracy by performing the second correction process using the first initial detection value Sup.

[0148] In addition, in the present embodiment, the first detection circuit 10 that generates the first detection signals Sll, S12 is included in the first chip 2, and the second detection circuit 20 that generates the second detection signals S21, S22 and the third detection circuit 30 that generates the third detection signals S31, S32 are included in the second chip 3. In this way, in the present embodiment, it is characterized that the deviation of each of the first to third initial detection values Sup, Svp, Szp generated using the detection circuits included in the two chips physically separated from each other is suppressed.

[0149] Next, the simulation results for investigating the error of the second detection value Sv will be described. In the simulation, the magnetic sensor device 100 was subjected to an object magnetic field including at least a component in the U direction and a component in the V direction, and the first to third detection values Su, Sv, Sz were generated. Further, in the simulation, the difference Sll-S12 and the values S3, S4 were corrected in a manner that the first to third initial detection values Sup, Svp, Szp respectively represent the intensity of the component in the direction parallel to the U direction of the object magnetic field, the intensity of the component in the direction parallel to the V direction of the object magnetic field, and the intensity of the component in the direction parallel to the Z direction of the object magnetic field, and the first to third initial detection values Sup, Svp, Szp were generated. In addition, in the simulation, the second correction process was performed first before the first correction process was performed.

[0150] In the simulation, every time the second correction process and the first correction process were alternately performed once, the determination process was performed, and the first to third detection values Su, Sv, Sz were generated. In addition, the error of the second detection value Sv was found as a value obtained by dividing the difference between the intensity of the component in the V direction of the object magnetic field and the second detection value Sv by the intensity of the component in the V direction of the object magnetic field.

[0151] In addition, in the simulation, the third process of the second generation process was performed before the first and second correction processes were performed, the second initial detection value Svp was found, and the error of the second detection value Sv when the number of times of execution of each of the first and second correction processes was zero was found based on the second initial detection value Svp. That is, the error of the second detection value Sv when the number of times of execution of each of the first and second correction processes was zero was found as a value obtained by dividing the difference between the intensity of the component in the V direction of the object magnetic field and the above-mentioned second initial detection value Svp by the intensity of the component in the V direction of the object magnetic field. The error of the second detection value Sv when the number of times of execution of each of the first and second correction processes was zero was 3.54%.

[0152] In addition, the error of the second detection value Sv when the number of times of execution of each of the first and second correction processes was once was 0.13%. In addition, the error of the second detection value Sv when the number of times of execution of each of the first and second correction processes was twice and when the number of times of execution of each of the first and second correction processes was thrice was 0%.

[0153] From the results of the simulation, it can be understood that by performing each of the first and second correction processes once, it is possible to reduce the error of the second detection value Sv. In addition, by performing each of the first and second correction processes twice, it is possible to set the error of the second detection value Sv to approximately 0. Further, even if each of the first and second correction processes is performed thrice, the error of the second detection value Sv is approximately 0. From the viewpoint of the load on the processor 40, the number of times of execution of each of the first and second correction processes is preferably twice.

[0154] The above description regarding the second detection value Sv also applies to the first detection value Su and the third detection value Sz.

[0155] [Second Embodiment]

[0156] Next, a magnetic sensor device of a second embodiment of the present application will be described. In the present embodiment, the direction of magnetization of the free layer 54 of the MR element 50 is different from that of the first embodiment.

[0157] Hereinafter, the direction of magnetization of the free layer 54 of the MR element 50 will be described using the first to fourth magnetization directions defined in the first embodiment. Figure 13 is a circuit diagram showing the circuit structure of the first detection circuit 10. Figure 14 is a circuit diagram showing the circuit structure of the second detection circuit 20. Figure 15 is a circuit diagram showing the circuit structure of the third detection circuit 30.

[0158] As in the first embodiment, in the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. In the present embodiment, in the case where the object magnetic field is not applied to the first MR element 50A, the magnetization of the free layer 54 in each of the first and fourth resistance portions R11, R14 includes a component of the third magnetization direction (V direction). In the case where the object magnetic field is not applied to the first MR element 50A, the magnetization of the free layer 54 in each of the second and third resistance portions R12, R13 includes a component of the fourth magnetization direction (-V direction).

[0159] In addition, in the present embodiment, the first coil 70 (see Figure 3 ) can also be configured, for example, to be able to apply a magnetic field in the X direction to the free layer 54 in the first and fourth resistance portions R11, R14 and apply a magnetic field in the -X direction to the free layer 54 in the second and third resistance portions R12, R13.

[0160] In addition, as in the first embodiment, in the second detection circuit 20, the first magnetization direction is the W1 direction, the second magnetization direction is the -W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. In the present embodiment, in the case where the object magnetic field is not applied to the second MR element 50B, the magnetization of the free layer 54 in each of the first and fourth resistance portions R21, R24 includes a component of the third magnetization direction (U direction). In the case where the object magnetic field is not applied to the second MR element 50B, the magnetization of the free layer 54 in each of the second and third resistance portions R22, R23 includes a component of the fourth magnetization direction (-U direction).

[0161] Also, in the third detection circuit 30, the first magnetization direction is the W2 direction, the second magnetization direction is the -W2 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction, as in the first embodiment. In the present embodiment, in the case where the object magnetic field is not applied to the third MR element 50C, the magnetization of the free layer 54 in each of the first and fourth resistance portions R31, R34 contains a component of the third magnetization direction (U direction). In the case where the object magnetic field is not applied to the third MR element 50C, the magnetization of the free layer 54 in each of the second and third resistance portions R32, R33 contains a component of the fourth magnetization direction (-U direction).

[0162] Also, in the present embodiment, the second coil 80 (see Figure 3 ) can be configured, for example, to be able to apply a magnetic field in the X direction to the free layers 54 in the first and fourth resistance portions R21, R24 of the second detection circuit 20 and the first and fourth resistance portions R31, R34 of the third detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 in the second and third resistance portions R22, R23 of the second detection circuit 20 and the second and third resistance portions R32, R33 of the third detection circuit 30.

[0163] The other structures, actions, and effects of the present embodiment are the same as those of the first embodiment.

[0164] [Third Embodiment]

[0165] Next, a third embodiment of the present application will be described. The magnetic sensor device 100 of the present embodiment is configured by the magnetic sensor 101 of the present embodiment and the processor 40 described in the first embodiment. The magnetic sensor 101 can also have the same external appearance shape as the first chip 2 or the second chip 3 of the first embodiment.

[0166] Hereinafter, the structure of the magnetic sensor 101 of the present embodiment will be described with reference to Figures 16-19 Figure 16 is a functional block diagram showing the structure of the magnetic sensor device 100 of the present embodiment. Figure 17 is a circuit diagram showing the circuit structure of the first detection circuit of the present embodiment. Figure 18 is a circuit diagram showing the circuit structure of the second detection circuit of the present embodiment. Figure 19 is a circuit diagram showing the circuit structure of the third detection circuit of the present embodiment.

[0167] The magnetic sensor 101 includes the first detection circuit 110, the second detection circuit 120, and the third detection circuit 130. Each of the first to third detection circuits 110, 120, 130 includes a plurality of MR elements.

[0168] ​The first detection circuit 110 is configured to detect the component of the magnetic field of the target object in the direction parallel to the U direction, and generates first detection signals S111 and S112 corresponding to this component. The second detection circuit 120 is configured to detect the component of the magnetic field of the target object in the direction parallel to the V direction, and generates second detection signals S121 and S122 corresponding to this component. The third detection circuit 130 is configured to detect the component of the magnetic field of the target object in the direction parallel to the Z direction, and generates third detection signals S131 and S132 corresponding to this component.

[0169] The circuit structure of the first detection circuit 110 is basically the same as that of the first detection circuit 10 in the first embodiment. Figure 17 In the diagram, the symbols R111, R112, R113, and R114 represent the first to fourth resistor sections of the first detection circuit 10, which correspond to the first to fourth resistor sections R11, R12, R13, and R14, respectively.

[0170] The circuit structure of the second detection circuit 120 is basically the same as that of the second detection circuit 20 in the first embodiment. Figure 18 In the diagram, the symbols R121, R122, R123, and R124 represent the first to fourth resistor sections of the second detection circuit 120, which correspond to the first to fourth resistor sections R21, R22, R23, and R24 of the second detection circuit 20, respectively.

[0171] The circuit structure of the third detection circuit 130 is basically the same as that of the third detection circuit 30 in the first embodiment. Figure 19 In the diagram, the symbols R131, R132, R133, and R134 represent the first to fourth resistor sections of the third detection circuit 130, which correspond to the first to fourth resistor sections R31, R32, R33, and R34 of the third detection circuit 30, respectively.

[0172] The resistive sections R111-R114, R121-R124, and R131-R134 are composed of multiple MR elements. Hereinafter, the multiple MR elements of the magnetic sensor 101 will be represented by the symbol 150. The structure of the MR element 150 may also be the same as the structure of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least a magnetization fixing layer 52, a free layer 54, and a gap layer 53 (see reference 53). Figure 11 ).

[0173] exist Figures 17-19 In the diagram, the solid arrow indicates the direction of magnetization of the magnetization fixing layer 52 of the MR element 150. Figure 17In the illustrated example, the direction of magnetization of the magnetization fixed layer 52 in each of the first and third resistance portions R111, R113 is the U direction. The direction of magnetization of the magnetization fixed layer 52 in each of the second and fourth resistance portions R112, R114 is the -U direction. In addition, the free layer 54 of each of the plurality of MR elements 150 of the first detection circuit 110 has shape anisotropy in which the easy magnetization axis direction becomes a direction parallel to the V direction.

[0174] In Figure 18 In the illustrated example, the direction of magnetization of the magnetization fixed layer 52 in each of the first and third resistance portions R121, R123 is the V direction. The direction of magnetization of the magnetization fixed layer 52 in each of the second and fourth resistance portions R122, R124 is the -V direction. In addition, the free layer 54 of each of the plurality of MR elements 150 of the second detection circuit 120 has shape anisotropy in which the easy magnetization axis direction becomes a direction parallel to the U direction.

[0175] The free layer 54 of each of the plurality of MR elements 150 of the third detection circuit 130 has shape anisotropy in which the easy magnetization axis direction becomes a direction parallel to the V direction. The direction of magnetization of the magnetization fixed layer 52 in the third detection circuit 130 is described later.

[0176] Next, the detailed structure of the magnetic sensor 101 is described. The magnetic sensor 101 includes a substrate having an upper surface, a first portion including the first detection circuit 110, a second portion including the second detection circuit 120, and a third portion including the third detection circuit 130. The upper surface of the substrate is set to be parallel to the XY plane. The first to third portions are formed on the substrate. The structure of the first portion and the structure of the second portion are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first portion each have a shape long in the V direction. The plurality of MR elements 150 included in the second portion each have a shape long in the U direction. Furthermore, the first and second portions can include or can not include the first coil 70 described in the first embodiment.

[0177] Next, the detailed structure of the magnetic sensor 101 is described. The magnetic sensor 101 includes a substrate having an upper surface, a first portion including the first detection circuit 110, a second portion including the second detection circuit 120, and a third portion including the third detection circuit 130. The upper surface of the substrate is set to be parallel to the XY plane. The first to third portions are formed on the substrate. The structure of the first portion and the structure of the second portion are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first portion each have a shape long in the V direction. The plurality of MR elements 150 included in the second portion each have a shape long in the U direction. Furthermore, the first and second portions can include or can not include the first coil 70 described in the first embodiment. Figure 20 and Figure 21 The structure of the third portion of the magnetic sensor 101 is described. Figure 20 is a perspective view showing the plurality of MR elements 150 and the plurality of magnetic yokes. Figure 21 is a side view showing the plurality of MR elements 150 and the plurality of magnetic yokes.

[0178] The structure of the third part is basically the same as that of the first part. The third part also includes multiple magnetic yokes 151, each made of soft magnetic material. Each of the multiple magnetic yokes 151 may also have a cuboid shape that is longer in the V direction. Each of the multiple magnetic yokes 151 is configured to receive an input magnetic field that includes an input magnetic field component in a direction parallel to the Z direction and generate an output magnetic field. The output magnetic field includes an output magnetic field component in a direction parallel to the U direction, that is, an output magnetic field component that varies according to the input magnetic field component.

[0179] Each of the plurality of magnetic yokes 151 has a first end face 151a and a second end face 151b located at both ends in a direction parallel to the U direction. In each of the plurality of magnetic yokes 151, the first end face 151a is located at one end of the magnetic yoke 151 in the -U direction, and the second end face 151b is located at one end of the magnetic yoke 151 in the U direction. Furthermore, the plurality of magnetic yokes 151 are arranged in a direction parallel to the U direction.

[0180] like Figure 20 and Figure 21 As shown, in the third part, multiple MR elements 150 are arranged in a row along the first end face 150a, and multiple MR elements 150 are arranged in a row along the second end face 150b. Hereinafter, the multiple MR elements 150 arranged along the first end face 150a will be represented by the symbol 150A, and the multiple MR elements 150 arranged along the second end face 150b will be represented by the symbol 150B. In the third part, the multiple MR elements 150A and the multiple MR elements 150B are arranged in an alternating manner in a direction parallel to the U direction. When viewed from above, the multiple MR elements 150A and the multiple MR elements 150B may not overlap with the multiple yokes 151.

[0181] Although not illustrated, the third part also includes multiple first lower electrodes, multiple second lower electrodes, multiple first upper electrodes, and multiple second upper electrodes. Multiple MR elements 150A are connected in series via the multiple first lower electrodes and the multiple first upper electrodes. Multiple MR elements 150B are connected in series via the multiple second lower electrodes and the multiple second upper electrodes.

[0182] Next, the multiple magnetic yokes 151 will be described in detail. When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is the U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is the -U direction. When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is the -U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is the U direction.

[0183] Next, the first to third detection signals of the present embodiment will be described. First, the first detection signal will be described briefly. The manner in which the resistance values of the respective resistance portions R111 to R114 of the first detection circuit 110 change is the same as the manner in which the resistance values of the respective resistance portions R11 to R14 of the first detection circuit 10 described in the first embodiment change. The first detection circuit 110 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111 and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112.

[0184] Next, the second detection signal will be described with reference to FIG. 6. Figure 18 When the strength of the component of the object magnetic field in the direction parallel to the V direction changes, the resistance values of the respective resistance portions R121 to R124 of the second detection circuit 120 change in such a manner that the resistance values of the resistance portions R122, R124 decrease as the resistance values of the resistance portions R121, R123 increase, or the resistance values of the resistance portions R122, R124 increase as the resistance values of the resistance portions R121, R123 decrease. Thereby, the potentials of the respective signal output terminals E21, E22 change. The second detection circuit 120 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121 and to generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122.

[0185] Next, the third detection signal will be described with reference to FIG. 7. Figures 19-21 The first resistance portion R131 and the second resistance portion R132 are configured by a plurality of MR elements 150A. The third resistance portion R133 and the fourth resistance portion R134 are configured by a plurality of MR elements 150B.

[0186] Here, one region in which the plurality of MR elements 150 configuring the third detection circuit 130 are arranged is divided into a first region and a second region. The plurality of MR elements 150A configuring the first resistance portion R131 and the plurality of MR elements 150B configuring the fourth resistance portion R134 can also be arranged in the first region. The plurality of MR elements 150A configuring the second resistance portion R132 and the plurality of MR elements 150B configuring the third resistance portion R133 can also be arranged in the second region.

[0187] The direction of magnetization of the magnetization-fixed layer 52 in each of the first and fourth resistance portions R131, R134 is the U direction. The direction of magnetization of the magnetization-fixed layer 52 in each of the second and third resistance portions R132, R133 is the -U direction.

[0188] In a case where the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by the plurality of MR elements 150A in the first and second resistance portions R131, R132 becomes the U direction, and the direction of the output magnetic field component received by the plurality of MR elements 150B in the third and fourth resistance portions R133, R134 becomes the -U direction. In this case, the resistance values of the plurality of MR elements 150A in the first resistance portion R131 and the plurality of MR elements 150B in the third resistance portion R133 each decrease compared to a state where the output magnetic field component is not present, and the resistance values of the first and third resistance portions R131, R133 each decrease. In addition, the resistance values of the plurality of MR elements 150A in the second resistance portion R132 and the plurality of MR elements 150B in the fourth resistance portion R134 each increase compared to a state where the output magnetic field component is not present, and the resistance values of the second and fourth resistance portions R132, R134 each increase.

[0189] In a case where the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component and the change in the resistance values of the first to fourth resistance portions R131 to R134 are opposite to those in the case where the direction of the input magnetic field component is the Z direction.

[0190] In this way, when the direction and intensity of the input magnetic field component change, the resistance values of the resistance portions R131 to R134 of the third detection circuit 130 each change in such a manner that the resistance values of the resistance portions R132, R134 decrease as the resistance values of the resistance portions R131, R133 increase, or the resistance values of the resistance portions R132, R134 increase as the resistance values of the resistance portions R131, R133 decrease. As a result, the potentials of the signal output terminals E31, E32 each change. The third detection circuit 130 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131 and to generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132.

[0191] Next, the structure and operation of the processor 40 of the present embodiment will be described. Figure 22 is a functional block diagram showing the structure of the processor 40 of the present embodiment. In the present embodiment, the processor 40 is configured to generate a first detection value Su corresponding to a component of an object magnetic field in a direction parallel to the U direction on the basis of the first detection signals S111, S112, to generate a second detection value Sv corresponding to a component of the object magnetic field in a direction parallel to the V direction on the basis of the second detection signals S121, S122, and to generate a third detection value Sz corresponding to a component of the object magnetic field in a direction parallel to the Z direction on the basis of the third detection signals S131, S132.

[0192] The processor 40 of this embodiment includes the first arithmetic circuit 141, the second arithmetic circuit 142, and the third arithmetic circuit 143 in place of the first and second arithmetic circuits of the first embodiment. The first arithmetic circuit 141 is configured to perform a first generation process. The content of the first generation process of this embodiment is the same as that of the first embodiment. That is, the first generation process of this embodiment is a process of generating a first initial detection value Sup corresponding to the first detection value Su using the first detection signals S111 and S112. The first arithmetic circuit 141 generates the first initial detection value Sup by including an operation of finding the difference S111-S112 between the first detection signals S111 and S112. The first initial detection value Sup can be the difference S111-S112 itself, or a value to which a prescribed correction such as gain adjustment and offset adjustment is applied to the difference S111-S112.

[0193] The second arithmetic circuit 142 is configured to perform a second generation process. The content of the second generation process of this embodiment is different from that of the first embodiment. The second generation process of this embodiment is a process of generating a second initial detection value Svp corresponding to the second detection value Sv using the second detection signals S121 and S122. The second arithmetic circuit 142 generates the second initial detection value Svp by including an operation of finding the difference S121-S122 between the second detection signals S121 and S122. The second initial detection value Svp can be the difference S121-S122 itself, or a value to which a prescribed correction such as gain adjustment and offset adjustment is applied to the difference S121-S122.

[0194] The third arithmetic circuit 143 is configured to perform a third generation process. The third generation process is a process of generating the third detection value Sz using the third detection signals S131 and S132. The third arithmetic circuit 143 generates the third detection value Sz by including an operation of finding the difference S131-S132 between the third detection signals S131 and S132. The third detection value Sz can be the difference S131-S132 itself, or a value to which a prescribed correction such as gain adjustment and offset adjustment is applied to the difference S131-S132.

[0195] In addition, in this embodiment, the correction circuit 43 is configured not to generate the third detection value Sz. In addition, in this embodiment, the content of the determination process is different from that of the first embodiment. The determination process of this embodiment includes a process of determining the first detection value Su and the second detection value Sv, but does not include a process of determining the third detection value Sz.

[0196] Further, in the present embodiment, the correction circuit 43 executes the determination processing after alternately executing the first correction processing and the second correction processing. The correction circuit 43 can execute the first correction processing and the second correction processing each once, can execute them each twice, or can execute them each three or more times. Further, the correction circuit 43 can execute the first correction processing first from the update of the second initial detection value Svp. That is, the correction circuit 43 can execute the second correction processing first before executing the first correction processing for the first time.

[0197] The other structures, actions, and effects of the present embodiment are the same as those of the first embodiment.

[0198] Further, the present application is not limited to the above-described embodiments, and various modifications can be made. For example, the magnetic sensor of the present application can integrate the first chip 2 and the second chip 3.

[0199] Further, the second chip 3 can include only the second detection circuit configured to detect the component of the object magnetic field in the direction parallel to the V direction instead of the second and third detection circuits 20 and 30. Alternatively, the second chip 3 can include the second detection circuit configured to detect the component of the object magnetic field in the direction parallel to the V direction and the third detection circuit configured to detect the component of the object magnetic field in the direction parallel to the Z direction instead of the second and third detection circuits 20 and 30.

[0200] Further, the second operation circuit 42 of the first embodiment can be configured to be able to execute a third processing of the second generation processing in addition to the first and second processings of the second generation processing. In this case, the correction circuit 43 can execute the second correction processing using the second and third initial detection values Svp and Szp generated by the second operation circuit 42 instead of the first and second values S1 and S2. The second correction processing can be processing of calculating (updating) the second initial detection value Svp by substituting the latest second initial detection value Svp and the latest first correction value Suc into the first expression expressed using the second initial detection value Svp and the first correction value Suc, and calculating (updating) the third initial detection value Szp by substituting the latest third initial detection value Szp and the latest first correction value Suc into the second expression expressed using the third initial detection value Szp and the first correction value Suc. The first expression can be an expression including an operation including the latest second initial detection value Svp multiplied by the first correction value Suc and an operation of adding or subtracting a value obtained by the operation to or from the latest second initial detection value Svp. The second expression can be an expression including an operation including the latest third initial detection value Szp multiplied by the first correction value Suc and an operation of adding or subtracting a value obtained by the operation to or from the latest third initial detection value Szp.

[0201] As described above, the magnetic sensor device of the present application is provided with: a first detection circuit configured to detect a component of one direction of an object magnetic field that is a magnetic field to be detected as a detection object, and generate a first detection signal; a second detection circuit configured to detect a component of another direction of the object magnetic field, and generate a second detection signal; and a processor.

[0202] The processor is configured to perform: a first generation process of generating a first initial detection value using the first detection signal; a second generation process of generating a second initial detection value using the second detection signal; a first correction process of correcting the first initial detection value using a first correction value generated based on the latest second initial detection value, and updating the first initial detection value; a second correction process of correcting the second initial detection value using a second correction value generated based on the latest first initial detection value, and updating the second initial detection value; and a determination process of determining the latest first initial detection value as a first detection value having a corresponding relationship with a component of the object magnetic field parallel to the first reference direction, and determining the latest second initial detection value as a second detection value having a corresponding relationship with a component of the object magnetic field parallel to the second reference direction. The processor performs the determination process after alternately performing the first correction process and the second correction process.

[0203] In the magnetic sensor device of the present application, the processor can also perform the first correction process and the second correction process each twice, respectively.

[0204] Further, in the magnetic sensor device of the present application, the processor can also perform the second correction process for the first time before performing the first correction process for the first time.

[0205] Further, in the magnetic sensor device of the present application, the first correction value can be a value calculated through an operation including multiplication of the latest first initial detection value by a first correction coefficient. The second correction value can be a value calculated through an operation including multiplication of the latest second initial detection value by a second correction coefficient.

[0206] Further, in the magnetic sensor device of the present application, the first detection circuit and the second detection circuit each can also include: a first magnetoresistance effect element and a second magnetoresistance effect element connected in series on a path, that is, a first path, electrically connecting the first node and the second node; a third magnetoresistance effect element and a fourth magnetoresistance effect element connected in series on another path, that is, a second path, electrically connecting the first node and the second node. The first magnetoresistance effect element and the fourth magnetoresistance effect element can also be connected to the first node. The second magnetoresistance effect element and the third magnetoresistance effect element can also be connected to the second node. The first to fourth magnetoresistance effect elements each can also include a magnetization fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization with a direction changeable according to an object magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. The direction of a principal component of the first magnetization in the first magnetoresistance effect element and the direction of a principal component of the first magnetization in the third magnetoresistance effect element can be the same direction. The direction of a principal component of the first magnetization in the second magnetoresistance effect element and the direction of a principal component of the first magnetization in the fourth magnetoresistance effect element can be the same direction. The direction of a principal component of the first magnetization in the second magnetoresistance effect element can be a direction opposite to the direction of a principal component of the first magnetization in the first magnetoresistance effect element. The direction of a principal component of the first magnetization in the fourth magnetoresistance effect element can be a direction opposite to the direction of a principal component of the first magnetization in the third magnetoresistance effect element. In a case where no object magnetic field is applied to the first and second detection circuits, the direction of a principal component of the second magnetization in each of two magnetoresistance effect elements among the first to fourth magnetoresistance effect elements can be a direction opposite to the direction of a principal component of the second magnetization in each of the other two magnetoresistance effect elements among the first to fourth magnetoresistance effect elements. The gap layer can be a tunnel barrier layer.

[0207] Further, in the magnetic sensor device of the present application, no shield can be provided in each of the first detection circuit and the second detection circuit.

[0208] Further, in the magnetic sensor device of the present application, the first reference direction and the second reference direction can each be parallel to a reference plane and orthogonal to each other.

[0209] Further, in the magnetic sensor device of the present application, the direction of a component of an object magnetic field detected by the first detection circuit can be a direction parallel to the reference plane. The direction of a component of an object magnetic field detected by the second detection circuit can be a direction inclined with respect to the reference plane.

[0210] Also, it can be that the magnetic sensor device of the present application further has a third detection circuit, and the third detection circuit is configured to detect a component of an object magnetic field in a direction different from a direction of a component of the object magnetic field detected by the second detection circuit and inclined with respect to the reference plane, and generate a third detection signal. The second generation processing can also be processing of generating a second initial detection value and a third initial detection value using the second detection signal and the third detection signal. The second correction processing can also be processing of correcting and updating the second initial detection value and the third initial detection value using the first correction value. The determination processing can also determine the latest third initial detection value as a third detection value having a correspondence relationship with a component of the object magnetic field perpendicular to the reference plane.

[0211] In the case where the magnetic sensor device of the present application has the third detection circuit, the second generation processing can include first processing of generating a first value using the second detection signal, second processing of generating a second value using the third detection signal, and third processing of generating a second initial detection value and a third initial detection value using the first value and the second value. The second correction processing can also substantially include the third processing. In this case, the processor can sequentially execute the second correction processing for the first time and the first correction processing for the first time after executing the first processing and the second processing. Also, the second correction processing can include fourth processing of correcting the first value and the second value using the first correction value, fifth processing of generating a second initial detection value and a third initial detection value using the first value and the second value corrected by the fourth processing, and sixth processing of updating the second initial detection value and the third initial detection value using the second initial detection value and the third initial detection value generated by the fifth processing.

[0212] In the case where the magnetic sensor device of the present application is provided with the third detection circuit, each of the first to third detection circuits can also include: a first magnetoresistance effect element and a second magnetoresistance effect element connected in series on a path, that is, a first path, electrically connecting the first node and the second node; a third magnetoresistance effect element and a fourth magnetoresistance effect element connected in series on another path, that is, a second path, electrically connecting the first node and the second node. The first magnetoresistance effect element and the fourth magnetoresistance effect element can be connected to the first node. The second magnetoresistance effect element and the third magnetoresistance effect element can be connected to the second node. Each of the first to fourth magnetoresistance effect elements can include a magnetization fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization with a variable direction according to an object magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. The direction of a principal component of the first magnetization in the first magnetoresistance effect element and the direction of a principal component of the first magnetization in the third magnetoresistance effect element can be the same direction. The direction of a principal component of the first magnetization in the second magnetoresistance effect element and the direction of a principal component of the first magnetization in the fourth magnetoresistance effect element can be the same direction. The direction of a principal component of the first magnetization in the second magnetoresistance effect element can be a direction opposite to the direction of a principal component of the first magnetization in the first magnetoresistance effect element. The direction of a principal component of the first magnetization in the fourth magnetoresistance effect element can be a direction opposite to the direction of a principal component of the first magnetization in the third magnetoresistance effect element. In the case where no object magnetic field is applied to the first to third detection circuits, the direction of a principal component of the second magnetization in each of two magnetoresistance effect elements among the first to fourth magnetoresistance effect elements can be a direction opposite to the direction of a principal component of the second magnetization in each of the other two magnetoresistance effect elements among the first to fourth magnetoresistance effect elements. The gap layer can be a tunnel barrier layer.

[0213] In addition, in the case where the magnetic sensor device of the present application is provided with the third detection circuit, a shield can not be provided in each of the first to third detection circuits.

[0214] In addition, in the case where the magnetic sensor device of the present application is provided with the third detection circuit, the magnetic sensor device of the present application can further include a first chip including the first detection circuit and a second chip including the second detection circuit and the third detection circuit.

[0215] Also, the magnetic sensor device of the present application can further include a third detection circuit configured to detect a component of the object magnetic field perpendicular to the reference plane and generate a third detection signal. The direction of the component of the object magnetic field detected by the first detection circuit can also be a first direction parallel to the reference plane. The direction of the component of the object magnetic field detected by the second detection circuit can also be a second direction parallel to the reference plane. The second generation process can also be a process of generating a second initial detection value and a third detection value using the second detection signal and the third detection signal. The third detection value can also have a corresponding relationship with the component of the object magnetic field perpendicular to the reference plane.

[0216] As described above, various modes or modifications of the present application can be implemented. Therefore, the present application can be implemented even in modes other than the above-described best modes, within the scope of the claims.

Claims

1. A magnetic sensor device characterized by comprising: a first detection circuit configured to detect a component of a subject magnetic field that is a magnetic field as a detection target in one direction and generate a first detection signal; a second detection circuit configured to detect a component of the subject magnetic field in another direction and generate a second detection signal; a third detection circuit; and a processor, the processor configured to execute: a first generation process of generating a first initial detection value using the first detection signal; a second generation process of generating a second initial detection value using the second detection signal; a first correction process of correcting the first initial detection value using a second correction value generated based on a latest second initial detection value and updating the first initial detection value; a second correction process of correcting the second initial detection value using a first correction value generated based on a latest first initial detection value and updating the second initial detection value; and a determination process of determining the latest first initial detection value as a first detection value having a correspondence relationship with a component of the subject magnetic field parallel to a first reference direction and determining the latest second initial detection value as a second detection value having a correspondence relationship with a component of the subject magnetic field parallel to a second reference direction, the processor executing the determination process after alternately executing the first correction process and the second correction process, the component of the subject magnetic field detected by the first detection circuit is in a direction parallel to a reference plane, the component of the subject magnetic field detected by the second detection circuit is in a direction inclined with respect to the reference plane, the third detection circuit is configured to detect a component of the subject magnetic field in a direction inclined with respect to the reference plane and different from the direction of the component of the subject magnetic field detected by the second detection circuit and generate a third detection signal, the second generation process is a process of generating the second initial detection value and a third initial detection value using the second detection signal and the third detection signal, the second correction process is a process of correcting the second initial detection value and the third initial detection value using the first correction value and updating the second initial detection value and the third initial detection value, and the determination process further determines the latest third initial detection value as a third detection value having a correspondence relationship with a component of the subject magnetic field perpendicular to the reference plane.

2. The magnetic sensor device according to claim 1, characterized in that the processor executes the first correction process and the second correction process each twice.

3. The magnetic sensor device according to claim 1, characterized in that the processor executes the second correction process a first time before executing the first correction process a first time.

4. The magnetic sensor device according to claim 1, characterized in that the first correction value is a value calculated through an operation including a multiplication of a latest first initial detection value by a first correction coefficient, and the second correction value is a value calculated through an operation including a multiplication of a latest second initial detection value by a second correction coefficient. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 5. The magnetic sensor device according to claim 1, wherein the first detection circuit and the second detection circuit each include: a first magnetoresistance effect element and a second magnetoresistance effect element connected in series on a first path that is a path electrically connecting a first node and a second node; a third magnetoresistance effect element and a fourth magnetoresistance effect element connected in series on a second path that is another path electrically connecting the first node and the second node, the first magnetoresistance effect element and the fourth magnetoresistance effect element are connected to the first node, the second magnetoresistance effect element and the third magnetoresistance effect element are connected to the second node, the first magnetoresistance effect element, the second magnetoresistance effect element, the third magnetoresistance effect element, and the fourth magnetoresistance effect element each include a magnetization fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization with a direction that can change according to the object magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer, a direction of a principal component of the first magnetization in the first magnetoresistance effect element and a direction of a principal component of the first magnetization in the third magnetoresistance effect element are the same direction, a direction of a principal component of the first magnetization in the second magnetoresistance effect element and a direction of a principal component of the first magnetization in the fourth magnetoresistance effect element are the same direction, a direction of a principal component of the first magnetization in the second magnetoresistance effect element is a direction opposite to a direction of a principal component of the first magnetization in the first magnetoresistance effect element, a direction of a principal component of the first magnetization in the fourth magnetoresistance effect element is a direction opposite to a direction of a principal component of the first magnetization in the third magnetoresistance effect element, in a case where the object magnetic field is not applied to the first detection circuit and the second detection circuit, directions of principal components of the second magnetization of two of the first magnetoresistance effect element, the second magnetoresistance effect element, the third magnetoresistance effect element, and the fourth magnetoresistance effect element are directions opposite to directions of principal components of the second magnetization of the other two of the first magnetoresistance effect element, the second magnetoresistance effect element, the third magnetoresistance effect element, and the fourth magnetoresistance effect element.

6. The magnetic sensor device according to claim 5, wherein the gap layer is a tunnel barrier layer.

7. The magnetic sensor device according to claim 1, wherein no shield is provided in each of the first detection circuit and the second detection circuit.

8. The magnetic sensor device according to claim 1, wherein the first reference direction and the second reference direction are each parallel to a reference plane and orthogonal to each other.

9. The magnetic sensor device according to claim 1, wherein the second generation process includes a first process of generating a first value using the second detection signal, a second process of generating a second value using the third detection signal, and a third process of generating the second initial detection value and the third initial detection value using the first value and the second value, the second correction process substantially includes the third process, the processor sequentially executes the second correction process and the first correction process after executing the first process and the second process.

10. The magnetic sensor device according to claim 1, wherein the second generation process includes a first process of generating a first value using the second detection signal, a second process of generating a second value using the third detection signal, and a third process of generating the second initial detection value and the third initial detection value using the first value and the second value, the second correction process includes a fourth process of correcting and updating the first value and the second value using the first correction value, a fifth process of generating the second initial detection value and the third initial detection value using the latest first value and the latest second value, and a sixth process of updating the second initial detection value and the third initial detection value using the second initial detection value and the third initial detection value generated by the fifth process.

11. The magnetic sensor device according to claim 1, wherein the first detection circuit, the second detection circuit, and the third detection circuit each include: a first magnetoresistance effect element and a second magnetoresistance effect element connected in series on a first path that is a path electrically connecting a first node and a second node, a third magnetoresistance effect element and a fourth magnetoresistance effect element connected in series on a second path that is another path electrically connecting the first node and the second node, the first magnetoresistance effect element and the fourth magnetoresistance effect element are connected to the first node, the second magnetoresistance effect element and the third magnetoresistance effect element are connected to the second node, the first magnetoresistance effect element, the second magnetoresistance effect element, the third magnetoresistance effect element, and the fourth magnetoresistance effect element each include a magnetization fixed layer having a first magnetization with a fixed direction, a free layer having a second magnetization with a direction that can change according to the object magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer, a direction of a principal component of the first magnetization in the first magnetoresistance effect element and a direction of a principal component of the first magnetization in the third magnetoresistance effect element are the same direction, a direction of a principal component of the first magnetization in the second magnetoresistance effect element and a direction of a principal component of the first magnetization in the fourth magnetoresistance effect element are the same direction, a direction of a principal component of the first magnetization in the second magnetoresistance effect element is a direction opposite to a direction of a principal component of the first magnetization in the first magnetoresistance effect element, a direction of a main component of the first magnetization in the fourth magnetoresistive effect element is a direction opposite to a direction of a main component of the first magnetization in the third magnetoresistive effect element, in a case where the object magnetic field is not applied to the first detection circuit, the second detection circuit, and the third detection circuit, directions of main components of the second magnetization of two of the first magnetoresistive effect element, the second magnetoresistive effect element, the third magnetoresistive effect element, and the fourth magnetoresistive effect element are directions opposite to directions of main components of the second magnetization of the other two of the first magnetoresistive effect element, the second magnetoresistive effect element, the third magnetoresistive effect element, and the fourth magnetoresistive effect element.

12. The magnetic sensor device according to claim 11, wherein the gap layer is a tunnel barrier layer.

13. The magnetic sensor device according to claim 1, wherein no shield is provided in each of the first detection circuit, the second detection circuit, and the third detection circuit.

14. The magnetic sensor device according to claim 1, wherein a first chip including the first detection circuit and a second chip including the second detection circuit and the third detection circuit are further provided.

15. A magnetic sensor device comprising: a first detection circuit configured to detect a component of an object magnetic field that is a magnetic field to be detected in one direction and generate a first detection signal; a second detection circuit configured to detect a component of the object magnetic field in another direction and generate a second detection signal; a third detection circuit; and a processor, the processor is configured to perform: a first generation process of generating a first initial detection value using the first detection signal; a second generation process of generating a second initial detection value using the second detection signal; a first correction process of correcting the first initial detection value using a second correction value generated based on a latest second initial detection value and updating the first initial detection value; a second correction process of correcting the second initial detection value using a first correction value generated based on a latest first initial detection value and updating the second initial detection value; a determination process of determining the latest first initial detection value as a first detection value having a correspondence relationship with a component of the object magnetic field parallel to a first reference direction and determining the latest second initial detection value as a second detection value having a correspondence relationship with a component of the object magnetic field parallel to a second reference direction, the processor performs the determination process after alternately performing the first correction process and the second correction process, a direction of the component of the object magnetic field detected by the first detection circuit is a first direction parallel to a reference plane, a direction of the component of the object magnetic field detected by the second detection circuit is a second direction parallel to the reference plane, the third detection circuit is configured to detect a component of the object magnetic field perpendicular to the reference plane and generate a third detection signal, ​ The second generation process is a process of generating the second initial detection value and a third detection value using the second detection signal and the third detection signal, The third detection value has a corresponding relationship with a component of the object magnetic field perpendicular to the reference plane.

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