Decorative film, housing assembly, method for manufacturing the same, and electronic device

Abstract

The application provides a decorative film, which comprises at least one of a first decorative layer and a second decorative layer, the first decorative layer comprises at least one first decorative sublayer and at least one second decorative sublayer arranged alternately, the material of the first decorative sublayer comprises silicon dioxide, and the material of the second decorative sublayer comprises silicon; the second decorative layer comprises at least one silicon carbide layer and at least one third decorative sublayer, and the difference between the refractive indexes of the silicon carbide layer and the third decorative sublayer is greater than or equal to 0.5. The decorative film has excellent reflectivity and brightness, can obviously improve the appearance performance and color saturation of a product, and improves the texture of the product. The application also provides a shell assembly, a preparation method thereof and an electronic device.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of electronic products, and particularly relates to a decorative film, a shell assembly, a preparation method thereof and an electronic device. BACKGROUND

[0002] With the continuous development of electronic devices, users have higher and higher requirements for the appearance effect of electronic devices. In order to meet the increasingly high aesthetic requirements of users, the appearance effect of electronic devices also needs to be continuously enriched and developed to provide users with better use experience. SUMMARY

[0003] In view of this, the present application provides a decorative film, a shell assembly, a preparation method thereof and an electronic device.

[0004] In a first aspect, the present application provides a decorative film, the decorative film comprising at least one of a first decorative layer and a second decorative layer, the first decorative layer comprising at least one first decorative sublayer and at least one second decorative sublayer arranged alternately and stacked, a material of the first decorative sublayer comprising silicon dioxide, and a material of the second decorative sublayer comprising silicon; the second decorative layer comprising at least one silicon carbide layer and at least one third decorative sublayer, a refractive index difference between the silicon carbide layer and the third decorative sublayer being greater than or equal to 0.5.

[0005] In a second aspect, the present application provides a shell assembly, comprising a shell and a decorative film arranged on a surface of the shell, the decorative film comprising at least one of a first decorative layer and a second decorative layer, the first decorative layer comprising at least one first decorative sublayer and at least one second decorative sublayer arranged alternately and stacked, a material of the first decorative sublayer comprising silicon dioxide, and a material of the second decorative sublayer comprising silicon; the second decorative layer comprising at least one silicon carbide layer and at least one third decorative sublayer, a refractive index difference between the silicon carbide layer and the third decorative sublayer being greater than or equal to 0.5.

[0006] In a third aspect, the present application provides a preparation method of a shell assembly, comprising: forming a decorative film on a surface of a shell by physical vapor deposition, the decorative film comprising at least one of a first decorative layer and a second decorative layer, the first decorative layer comprising at least one first decorative sublayer and at least one second decorative sublayer arranged alternately and stacked, a material of the first decorative sublayer comprising silicon dioxide, and a material of the second decorative sublayer comprising silicon; the second decorative layer comprising at least one silicon carbide layer and at least one third decorative sublayer, a refractive index difference between the silicon carbide layer and the third decorative sublayer being greater than or equal to 0.5.

[0007] In a fourth aspect, the present application provides an electronic device, comprising a housing assembly, the housing assembly comprising a housing and a decorative film arranged on a surface of the housing, the decorative film comprising at least one of a first decorative layer and a second decorative layer, the first decorative layer comprising at least one first decorative sub-layer and at least one second decorative sub-layer arranged alternately, a material of the first decorative sub-layer comprising silicon dioxide, and a material of the second decorative sub-layer comprising silicon; the second decorative layer comprising at least one silicon carbide layer and at least one third decorative sub-layer, a difference between refractive indexes of the silicon carbide layer and the third decorative sub-layer being greater than or equal to 0.5.

[0008] The decorative film provided by the present application has excellent reflectivity and brightness, can significantly improve the appearance performance and color saturation of a product, improve the texture of the product, and thus enrich the visual effect of the product. The housing and the electronic device with the decorative film have high reflectivity and high brightness, and thus improve the texture and competitiveness of the product. BRIEF DESCRIPTION OF DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be described below.

[0010] Figure 1 A structural schematic diagram of the decorative film provided by an embodiment of the present application.

[0011] Figure 2 A structural schematic diagram of the decorative film provided by another embodiment of the present application.

[0012] Figure 3 A structural schematic diagram of the decorative film provided by still another embodiment of the present application.

[0013] Figure 4 A structural schematic diagram of the first decorative layer provided by an embodiment of the present application.

[0014] Figure 5 A structural schematic diagram of the first decorative layer provided by another embodiment of the present application.

[0015] Figure 6 A structural schematic diagram of the first decorative layer provided by still another embodiment of the present application.

[0016] Figure 7 A structural schematic diagram of the second decorative layer provided by an embodiment of the present application.

[0017] Figure 8 A structural schematic diagram of the second decorative layer provided by another embodiment of the present application.

[0018] Figure 9 A structural schematic diagram of the second decorative layer provided by still another embodiment of the present application.

[0019] Figure 10 Structure diagram of the decorative film according to another embodiment of the present application.

[0020] Figure 11 Structure diagram of the decorative film according to another embodiment of the present application.

[0021] Figure 12 Structure diagram of the decorative film according to another embodiment of the present application.

[0022] Figure 13 Structure diagram of the decorative film according to another embodiment of the present application.

[0023] Figure 14 Structure diagram of the housing assembly according to an embodiment of the present application.

[0024] Figure 15 Structure diagram of the housing assembly according to another embodiment of the present application.

[0025] Figure 16 Structure diagram of the housing assembly according to another embodiment of the present application.

[0026] Figure 17 Structure diagram of the housing assembly according to another embodiment of the present application.

[0027] Figure 18 Schematic diagram of the electronic device according to an embodiment of the present application.

[0028] Label explanation:

[0029] Decorative film-10, first decorative layer-11, first decorative sub-layer-111, second decorative sub-layer-112, second decorative layer-12, silicon carbide layer-121, third decorative sub-layer-122, hardening layer-13, housing-20, primer layer-30, anti-fingerprint layer-40, connecting layer-50, housing assembly-100, electronic device-200. DETAILED DESCRIPTION

[0030] The following is a preferred embodiment of the present application, it should be noted that for those skilled in the art, without departing from the principles of the present application, can make a number of improvements and refinements, these improvements and refinements are also considered to be within the scope of the present application.

[0031] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplifying the present application, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those of ordinary skill in the art can realize the application of other processes and / or the use of other materials.

[0032] Please refer to Figures 1-3 The structural schematic diagram of the decorative film provided in the embodiment of the present application, the decorative film 10 includes at least one of a first decorative layer 11 and a second decorative layer 12, the first decorative layer 11 includes at least one first decorative sub-layer 111 and at least one second decorative sub-layer 112 which are alternately stacked, the material of the first decorative sub-layer 111 includes silicon dioxide, and the material of the second decorative sub-layer 112 includes silicon; the second decorative layer 12 includes at least one silicon carbide layer 121 and at least one third decorative sub-layer 122, and the difference between the refractive indexes of the silicon carbide layer 121 and the third decorative sub-layer 122 is greater than or equal to 0.5. In the related art, the appearance effect of the product is improved by setting the layer structure, but the reflectivity and brightness of the existing layer structure are low, so that the saturation of the color and luster of the product appearance is not good, the visual effect is not bright enough, and the feeling of being bright in the eyes cannot be brought. The difference between the refractive indexes of the first decorative sub-layer 111 and the second decorative sub-layer 112 in the decorative film 10 provided in the present application is large, and the difference between the refractive indexes of the silicon carbide layer 121 and the third decorative sub-layer 122 is large. The surface reflectivity and brightness of the first decorative layer 11 and the second decorative layer 12 formed by superposition are high, so that the decorative film 10 has excellent reflectivity and brightness, the appearance expressiveness and color saturation of the product can be obviously improved, the quality of the product is improved, and the visual effect of the product is enriched. In the present application, the decorative film 10 can include the first decorative layer 11, can include the second decorative layer 12, and can include the first decorative layer 11 and the second decorative layer 12 which are stacked.

[0033] In the present application, the first decorative layer 11 includes at least one first decorative sub-layer 111 and at least one second decorative sub-layer 112 which are alternately stacked, the material of the first decorative sub-layer 111 includes silicon dioxide, and the material of the second decorative sub-layer 112 includes silicon. The difference between the refractive indexes of the first decorative sub-layer 111 and the second decorative sub-layer 112 is large, so that the first decorative layer 11 has high reflectivity and high brightness, and the appearance effect of the decorative film 10 is improved.

[0034] In the embodiments of the present application, the reflectivity of the first decorative layer 11 is greater than or equal to 50%, and the brightness is greater than or equal to 50. In the present application, the reflectivity is the reflectivity of visible light, which is detected by a reflectivity meter, and the brightness is detected by a color difference meter. The first decorative layer 11 provided by the present application can significantly improve the reflectivity and brightness of the decorative film 10, thereby facilitating the improvement of the appearance saturation of the product in application and the improvement of the quality of the product. Specifically, the reflectivity of the first decorative layer 11 can be, but is not limited to, greater than or equal to 55%, 60%, 65%, 70%, 75%, 80%, or 85%, and the brightness can be, but is not limited to, greater than or equal to 55, 60, 70, 75, 80, 85, or 90.

[0035] In an embodiment of the present application, referring to Figure 1 , the first decorative layer 11 includes a first decorative sub-layer 111 and a second decorative sub-layer 112 which are stacked. In another embodiment of the present application, the first decorative layer 11 includes the first decorative sub-layer 111, the second decorative sub-layer 112, and the first decorative sub-layer 111 which are stacked. In still another embodiment of the present application, the first decorative layer 11 includes the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. In still another embodiment of the present application, the first decorative layer 11 includes a plurality of first decorative sub-layers 111 and a plurality of second decorative sub-layers 112 which are alternately stacked. Wherein, the plurality of layers refers to two or more layers. In an embodiment of the present application, the first decorative layer 11 includes n first decorative sub-layers 111 and n second decorative sub-layers 112 which are alternately stacked, and n is a positive integer greater than or equal to 2. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is conducive to the preparation of the first decorative layer 11, reduces the preparation cost, and improves the reliability of the first decorative layer 11. In an embodiment, n is 2, and the first decorative layer 11 includes the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. In another embodiment, n is 3, and the first decorative layer 11 includes the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. Referring to Figure 4In an embodiment of the present application, the first decorative layer 11 includes n first decorative sub-layers 111 and (n-1) second decorative sub-layers 112 which are alternately stacked, where n is a positive integer greater than or equal to 2. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is conducive to the preparation of the first decorative layer 11, reduces the preparation cost, and improves the reliability of the first decorative layer 11. In an embodiment, n is 3, and the first decorative layer 11 includes the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, and the first decorative sub-layer 111 which are stacked. In another embodiment, n is 4, and the first decorative layer 11 includes the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, and the first decorative sub-layer 111 which are stacked. Please refer to Figure 5 In another embodiment of the present application, the first decorative layer 11 includes n first decorative sub-layers 111 and (n-1) second decorative sub-layers 112 which are alternately stacked, where n is a positive integer greater than or equal to 2. At this time, it is more conducive to further improving the reflectivity of the first decorative layer 11, thereby significantly improving the visual saturation of the product in use. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is conducive to the preparation of the first decorative layer 11, reduces the preparation cost, and improves the reliability of the first decorative layer 11. In an embodiment, n is 3, and the first decorative layer 11 includes the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. In another embodiment, n is 4, and the first decorative layer 11 includes the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. Please refer to Figure 6 In another embodiment of the present application, the first decorative layer 11 includes n first decorative sub-layers 111 and (n-1) second decorative sub-layers 112 which are alternately stacked, where n is a positive integer greater than or equal to 2. At this time, it is more conducive to further improving the reflectivity of the first decorative layer 11, thereby significantly improving the visual saturation of the product in use. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is conducive to the preparation of the first decorative layer 11, reduces the preparation cost, and improves the reliability of the first decorative layer 11. In an embodiment, n is 3, and the first decorative layer 11 includes the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. In another embodiment, n is 4, and the first decorative layer 11 includes the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, the second decorative sub-layer 112, the first decorative sub-layer 111, and the second decorative sub-layer 112 which are stacked. Please refer to

[0036] In the present application, the material of the first decorative sub-layer 111 includes silicon dioxide, the material of the second decorative sub-layer 112 includes silicon, the difference between the refractive indexes of silicon and silicon dioxide is large, and the refractive index of silicon is large, so that the first decorative sub-layer 111 and the second decorative sub-layer 112 can be alternately stacked to obtain the first decorative layer 11 with high reflectivity and high brightness.

[0037] In the present application, the mass content of silicon dioxide in the first decorative sub-layer 111 is greater than or equal to 70%. The high content of silicon dioxide ensures the matching between the first decorative sub-layer 111 and the second decorative sub-layer 112, thereby helping to improve the reflectivity and brightness of the first decorative layer 11. Specifically, the mass content of silicon dioxide in the first decorative sub-layer 111 can be, but is not limited to, greater than or equal to 75%, 80%, 82%, 85%, 90%, 95%, etc. In the present application, the material of the first decorative sub-layer 111 can also include other materials, such as oxides, nitrides, etc. In this way, the preparation of the first decorative sub-layer 111 is facilitated, and it is not necessary to strictly control the preparation process to form a high-purity silicon dioxide layer, thereby greatly reducing the preparation difficulty and cost. In an embodiment of the present application, the material of the first decorative sub-layer 111 can also include at least one of silicon nitride, silicon oxynitride, niobium oxide, tantalum oxide, aluminum oxide, titanium oxide, and zirconium oxide. The first decorative sub-layer 111 formed by the above-mentioned materials matched with silicon dioxide can still be well matched with the second decorative sub-layer 112 to form a high-reflectivity and high-brightness effect. In another embodiment of the present application, the first decorative sub-layer 111 is a silicon dioxide layer, which is conducive to significantly improving the high-reflectivity and high-brightness effect of the first decorative layer 11.

[0038] In the present application, the mass content of silicon dioxide in the first decorative sub-layer 111 is greater than or equal to 70%. The high content of silicon dioxide ensures the matching between the first decorative sub-layer 111 and the second decorative sub-layer 112, thereby helping to improve the reflectivity and brightness of the first decorative layer 11. Specifically, the mass content of silicon dioxide in the first decorative sub-layer 111 can be, but is not limited to, greater than or equal to 75%, 80%, 82%, 85%, 90%, 95%, etc. In the present application, the material of the first decorative sub-layer 111 can also include other materials, such as oxides, nitrides, etc. In this way, the preparation of the first decorative sub-layer 111 is facilitated, and it is not necessary to strictly control the preparation process to form a high-purity silicon dioxide layer, thereby greatly reducing the preparation difficulty and cost. In an embodiment of the present application, the material of the first decorative sub-layer 111 can also include at least one of silicon nitride, silicon oxynitride, niobium oxide, tantalum oxide, aluminum oxide, titanium oxide, and zirconium oxide. The first decorative sub-layer 111 formed by the above-mentioned materials matched with silicon dioxide can still be well matched with the second decorative sub-layer 112 to form a high-reflectivity and high-brightness effect. In another embodiment of the present application, the first decorative sub-layer 111 is a silicon dioxide layer, which is conducive to significantly improving the high-reflectivity and high-brightness effect of the first decorative layer 11.

[0039] In the embodiments of the present application, the thickness of the first decorative sub-layer 111 is 10-200 nm. Specifically, the thickness of the first decorative sub-layer 111 can be, but is not limited to, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm or 200 nm, etc. In an embodiment, the thickness of the first decorative sub-layer 111 is 50-100 nm. In another embodiment, the thickness of the first decorative sub-layer 111 is 75-125 nm. In yet another embodiment, the thickness of the first decorative sub-layer 111 is 100-150 nm.

[0040] In an embodiment of the present application, the thickness of the second decorative sub-layer 112 is 35-75 nm. Specifically, the thickness of the second decorative sub-layer 112 can be, but is not limited to, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 70 nm or 75 nm, etc. The second decorative sub-layer 112 with a thinner thickness is beneficial to improve the internal stability of the first decorative layer 11 when matched with the first decorative sub-layer 111. In another embodiment of the present application, the thickness of the second decorative sub-layer 112 is 150-300 nm. The second decorative sub-layer 112 with the above-mentioned thickness is beneficial to further improve the reflectivity and brightness of the first decorative layer 11 when matched with the first decorative sub-layer 111. Specifically, the thickness of the second decorative sub-layer 112 can be, but is not limited to, 160 nm, 175 nm, 200 nm, 230 nm, 250 nm, 275 nm or 295 nm, etc. In an embodiment, the thickness of the second decorative sub-layer 112 is 150-200 nm. In another embodiment, the thickness of the second decorative sub-layer 112 is 200-250 nm. In yet another embodiment, the thickness of the second decorative sub-layer 112 is 250-300 nm.

[0041] In the embodiments of the present application, the thickness of the first decorative layer 11 is 60 nm-1000 nm. Specifically, the thickness of the first decorative layer 11 can be, but is not limited to, 60 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm or 900 nm, etc. The present application realizes high reflection and high brightness by the superposition of the first decorative sub-layer 111 and the second decorative sub-layer 112, and does not excessively increase the thickness of the first decorative layer 11, which is beneficial to the use of the decorative film 10. In an embodiment of the present application, the thickness of the first decorative layer 11 is 60 nm-500 nm. In another embodiment of the present application, the thickness of the first decorative layer 11 is 500 nm-1000 nm. In yet another embodiment of the present application, the thickness of the first decorative layer 11 is 200 nm-750 nm. In an embodiment, the first decorative layer 11 comprises a 10 nm-50 nm thick second decorative sub-layer 112, a 100 nm-150 nm thick first decorative sub-layer 111, a 10 nm-50 nm thick second decorative sub-layer 112, a 100 nm-150 nm thick first decorative sub-layer 111, a 10 nm-50 nm thick second decorative sub-layer 112 and a 50 nm-100 nm thick first decorative sub-layer 111, which are arranged in layers. The inventors have found that the above-mentioned layer arrangement can significantly improve the reflectivity and brightness of the first decorative layer 11. At this time, the reflectivity of the first decorative layer 11 is greater than or equal to 65%, and the brightness is greater than or equal to 70.

[0042] In the embodiment of the present application, when the first decorative layer 11 comprises a plurality of first decorative sub-layers 111 and a plurality of second decorative sub-layers 112 which are alternately stacked, the thickness of the first decorative sub-layer 111 can first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease along the stacking direction; the thickness of the second decorative sub-layer 112 can first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease. In the present application, the stacking direction is the direction from the decorative film 10 to the human eye. In the embodiment of the present application, the thickness of the first decorative sub-layer 111 first increases and then decreases, and the thickness of the second decorative sub-layer 112 gradually decreases along the stacking direction. The inventors have found that the mutual matching of the first decorative sub-layer 111 and the second decorative sub-layer 112 can significantly improve the reflectivity and brightness of the first decorative layer 11. At this time, the reflectivity of the first decorative layer 11 is greater than or equal to 65%, and the brightness is greater than or equal to 70. In an embodiment, the first decorative layer 11 comprises, along the stacking direction, a second decorative sub-layer 112 with a thickness of 10-50 nm, a first decorative sub-layer 111 with a thickness of 100-150 nm, a second decorative sub-layer 112 with a thickness of 10-50 nm, a first decorative sub-layer 111 with a thickness of 100-150 nm, a second decorative sub-layer 112 with a thickness of 10-50 nm, and a first decorative sub-layer 111 with a thickness of 50-100 nm, and the thickness of the first decorative sub-layer 111 first increases and then decreases, and the thickness of the second decorative sub-layer 112 gradually decreases along the stacking direction. At this time, the reflectivity of the first decorative layer 11 is greater than or equal to 85%, and the brightness is greater than or equal to 90.

[0043] In an embodiment, the first decorative layer 11 comprises a first decorative sub-layer 111 with a thickness of 50 nm and a second decorative sub-layer 112 with a thickness of 30 nm which are stacked. In another embodiment, the first decorative layer 11 comprises a first decorative sub-layer 111 with a thickness of 110 nm and a second decorative sub-layer 112 with a thickness of 25 nm which are stacked. In yet another embodiment, the first decorative layer 11 comprises a first decorative sub-layer 111 with a thickness of 150 nm and a second decorative sub-layer 112 with a thickness of 45 nm which are stacked. The reflectivity of the first decorative layer 11 described above is greater than or equal to 50%, and the brightness is greater than or equal to 60.

[0044] In an embodiment, along the stacking direction, the first decorative layer 11 comprises, in sequence, a 40 nm-thick second decorative sub-layer 112, a 110 nm-thick first decorative sub-layer 111, a 28 nm-thick second decorative sub-layer 112, a 125 nm-thick first decorative sub-layer 111, a 15 nm-thick second decorative sub-layer 112, and a 85 nm-thick first decorative sub-layer 111. In another embodiment, along the stacking direction, the first decorative layer 11 comprises, in sequence, a 50 nm-thick second decorative sub-layer 112, a 120 nm-thick first decorative sub-layer 111, a 42 nm-thick second decorative sub-layer 112, a 137 nm-thick first decorative sub-layer 111, a 35 nm-thick second decorative sub-layer 112, and a 90 nm-thick first decorative sub-layer 111. In yet another embodiment, along the stacking direction, the first decorative layer 11 comprises, in sequence, a 45 nm-thick silicon layer, a 105 nm-thick silicon dioxide layer, a 32 nm-thick silicon layer, a 115 nm-thick silicon dioxide layer, a 24 nm-thick silicon layer, and a 80 nm-thick silicon dioxide layer. The reflectivity of the above-mentioned first decorative layer 11 is greater than or equal to 85%, and the brightness is greater than or equal to 90.

[0045] In the embodiments of the present application, the first decorative layer 11 is formed by physical vapor deposition. In an embodiment of the present application, the first decorative layer 11 is formed by sputtering. In an embodiment, a silicon target is used, and inert gas and oxygen are introduced to form the first decorative layer 11 by sputtering. In another embodiment, a silicon target is used, and inert gas is introduced to form the second decorative layer 12 by sputtering; or a certain flow of hydrogen can be introduced at the same time as the inert gas. The inert gas can be, but is not limited to, argon and the like. In a specific embodiment, a silicon target is used, argon is introduced, and a 10 nm-50 nm-thick silicon layer is formed by sputtering deposition; oxygen is introduced, and a 100 nm-150 nm-thick silicon dioxide layer is formed by sputtering deposition; the introduction of oxygen is stopped, and a 10 nm-50 nm-thick silicon layer is formed by sputtering deposition; oxygen is introduced, and a 100 nm-150 nm-thick silicon dioxide layer is formed by sputtering deposition; the introduction of oxygen is stopped, and a 10 nm-50 nm-thick silicon layer is formed by sputtering deposition; oxygen is introduced, and a 50 nm-100 nm-thick silicon dioxide layer is formed by sputtering deposition, to obtain the first decorative layer 11.

[0046] In the present application, the second decorative layer 12 comprises at least one silicon carbide layer 121 and at least one third decorative sub-layer 122, and the difference between the refractive indexes of the silicon carbide layer 121 and the third decorative sub-layer 122 is greater than or equal to 0.5. In the second decorative layer 12 provided by the present application, the silicon carbide layer 121 has a relatively high refractive index (about 2.6-2.9), and the difference between the refractive indexes of the silicon carbide layer 121 and the third decorative sub-layer 122 is large, so that the surface reflectivity and brightness of the second decorative layer 12 can be significantly improved, and the decorative film 10 with high saturated color can be easily obtained, which is beneficial to the application of the decorative film 10 in products, improves the saturation of the appearance effect of the products, and enhances the texture of the products. Meanwhile, the silicon carbide layer 121 in the second decorative layer 12 has a relatively high hardness (about 25 GPa), which can significantly improve the surface hardness, wear resistance and scratch resistance of the decorative film 10, thereby protecting the surface of the product.

[0047] In an embodiment of the present application, the reflectivity of the second decorative layer 12 is greater than or equal to 20%, and the brightness is greater than or equal to 40. Specifically, the reflectivity of the second decorative layer 12 can be but is not limited to greater than or equal to 30%, 40%, 50%, 60%, 70% or 80%, and the brightness can be but is not limited to greater than or equal to 45, 50, 55, 60, 70 or 80.

[0048] In an embodiment of the present application, please refer to Figure 2 , the second decorative layer 12 comprises one silicon carbide layer 121 and one third decorative sub-layer 122 which are stacked. In another embodiment of the present application, the second decorative layer 12 comprises multiple silicon carbide layers 121 and multiple third decorative sub-layers 122, and the silicon carbide layers 121 and the third decorative sub-layers 122 are alternately stacked. In an embodiment, the second decorative layer 12 comprises periodically and alternately stacked silicon carbide layers 121 and third decorative sub-layers 122.

[0049] In an embodiment of the present application, the second decorative layer 12 comprises n silicon carbide layers 121 and n third decorative sub-layers 122 which are alternately stacked, and n is a positive integer greater than or equal to 2. Specifically, n can be but is not limited to 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is beneficial to the preparation of the second decorative layer 12, reduces the preparation cost, and improves the reliability of the second decorative layer 12. In an embodiment, n is 2, and the second decorative layer 12 comprises a silicon carbide layer 121, a third decorative sub-layer 122, a silicon carbide layer 121 and a third decorative sub-layer 122 which are stacked. In another embodiment, n is 3, and the second decorative layer 12 comprises a silicon carbide layer 121, a third decorative sub-layer 122, a silicon carbide layer 121, a third decorative sub-layer 122, a silicon carbide layer 121 and a third decorative sub-layer 122 which are stacked. Please refer to Figure 7In a second embodiment of the present application, the structure of the second decorative layer is shown in FIG. 2. The second decorative layer 12 includes a plurality of layers of silicon carbide layers 121 and a plurality of layers of third decorative sub-layers 122, which are alternately stacked. The number of layers of the silicon carbide layers 121 is the same as that of the third decorative sub-layers 122. In an embodiment of the present application, the second decorative layer 12 includes n layers of silicon carbide layers 121 and (n-1) layers of third decorative sub-layers 122, which are alternately stacked, where n is a positive integer greater than or equal to 2. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is advantageous for the preparation of the second decorative layer 12, reduces the preparation cost, and improves the reliability of the second decorative layer 12. In an embodiment, n is 3, and the second decorative layer 12 includes the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, and the silicon carbide layer 121, which are stacked. In another embodiment, n is 4, and the second decorative layer 12 includes the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, and the silicon carbide layer 121, which are stacked. Please refer to FIG. 2. Figure 8 In another embodiment of the present application, the structure of the second decorative layer is shown in FIG. 3. The second decorative layer 12 includes a plurality of layers of silicon carbide layers 121 and a plurality of layers of third decorative sub-layers 122, which are alternately stacked. The number of layers of the silicon carbide layers 121 is one more than that of the third decorative sub-layers 122. In an embodiment of the present application, the second decorative layer 12 includes (n-1) layers of silicon carbide layers 121 and n layers of third decorative sub-layers 122, which are alternately stacked, where n is a positive integer greater than or equal to 2. This is more advantageous for further improving the reflectivity of the second decorative layer 12, thereby significantly improving the visual saturation of the product in use. Specifically, n can be, but is not limited to, 2, 3, 4, 5, 6, etc. For example, n is a positive integer from 2 to 10, which is advantageous for the preparation of the second decorative layer 12, reduces the preparation cost, and improves the reliability of the second decorative layer 12. In an embodiment, n is 3, and the second decorative layer 12 includes the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, and the third decorative sub-layer 122, which are stacked. In another embodiment, n is 4, and the second decorative layer 12 includes the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, the third decorative sub-layer 122, the silicon carbide layer 121, and the third decorative sub-layer 122, which are stacked. Please refer to FIG. 3. Figure 9 In yet another embodiment of the present application, the structure of the second decorative layer is shown in FIG. 4. The second decorative layer 12 includes a plurality of layers of silicon carbide layers 121 and a plurality of layers of third decorative sub-layers 122, which are alternately stacked. The number of layers of the silicon carbide layers 121 is one less than that of the third decorative sub-layers 122.

[0050] In the embodiments of the present application, the material of the third decorative sub-layer 122 includes at least one of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium nitride, and chromium nitride. The third decorative sub-layer 122 formed by the above-mentioned material can cooperate with the silicon carbide layer 121 to form the second decorative layer 12 with high reflection and high brightness. Meanwhile, the above-mentioned material has high hardness, and the cooperation with the silicon carbide layer 121 can significantly improve the surface hardness of the second decorative layer 12, improve the anti-scratching and anti-wear ability of the second decorative layer 12, and improve the service life of the decorative film 10. In the present application, one third decorative sub-layer 122 can include one of a silicon nitride layer, a silicon oxynitride layer, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, a titanium nitride layer, and a chromium nitride layer. One third decorative sub-layer 122 can also include at least two of a silicon nitride layer, a silicon oxynitride layer, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, a titanium nitride layer, and a chromium nitride layer. One third decorative sub-layer 122 can also include a layer structure formed by mixing at least two of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium nitride, and chromium nitride. In the embodiments of the present application, the material of the third decorative sub-layer 122 includes at least one of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium nitride, and chromium nitride, and the surface hardness of the second decorative layer 12 is greater than or equal to 20 GPa. Specifically, the surface hardness of the second decorative layer 12 can be, but is not limited to, greater than or equal to 21 GPa, 22 GPa, 23 GPa, 24 GPa, 25 GPa, 26 GPa, 27 GPa, or 28 GPa, etc.

[0051] In the embodiments of the present application, the third decorative sub-layer 122 comprises at least one silicon nitride layer and / or at least one silicon oxynitride layer. It can be understood that the third decorative sub-layer 122 can be one silicon nitride layer, one silicon oxynitride layer, a laminated structure of silicon nitride layer and silicon oxynitride layer, a laminated structure of silicon nitride layer, silicon oxynitride layer and silicon nitride layer, a laminated structure of silicon oxynitride layer, silicon nitride layer and silicon oxynitride layer, or an alternating laminated structure of multiple silicon nitride layers and multiple silicon oxynitride layers. In one embodiment, the second decorative layer 12 comprises one silicon carbide layer 121 and one silicon nitride layer which are laminated. In another embodiment, the second decorative layer 12 comprises a silicon carbide layer 121, a silicon nitride layer and a silicon carbide layer 121 which are laminated. In yet another embodiment, the second decorative layer 12 comprises a silicon nitride layer, a silicon carbide layer 121 and a silicon nitride layer which are laminated. In yet another embodiment, the second decorative layer 12 comprises multiple silicon carbide layers 121 and multiple silicon nitride layers which are alternately laminated. The number of silicon carbide layers 121 and the number of silicon nitride layers can be the same or differ by one layer. In yet another embodiment, the second decorative layer 12 comprises one silicon carbide layer 121 and one silicon oxynitride layer which are laminated. In yet another embodiment, the second decorative layer 12 comprises a silicon carbide layer 121, a silicon oxynitride layer and a silicon carbide layer 121 which are laminated. In yet another embodiment, the second decorative layer 12 comprises a silicon oxynitride layer, a silicon carbide layer 121 and a silicon oxynitride layer which are laminated. In yet another embodiment, the second decorative layer 12 comprises multiple silicon carbide layers 121 and multiple silicon oxynitride layers which are alternately laminated. The number of silicon carbide layers 121 and the number of silicon oxynitride layers can be the same or differ by one layer. In yet another embodiment, the second decorative layer 12 comprises at least one silicon carbide layer 121, at least one silicon nitride layer and at least one silicon oxynitride layer. Further, the second decorative layer 12 comprises multiple silicon carbide layers 121, multiple silicon nitride layers and multiple silicon oxynitride layers which are alternately laminated. In a specific embodiment, the second decorative layer 12 comprises multiple silicon carbide layers 121, multiple silicon nitride layers and multiple silicon oxynitride layers which are periodically and alternately laminated. In another specific embodiment, the second decorative layer 12 comprises a silicon oxynitride layer, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer and a silicon oxynitride layer which are laminated in sequence. In yet another specific embodiment, the second decorative layer 12 comprises a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer and a silicon oxynitride layer which are laminated in sequence. The surface of the second decorative layer 12 described above has high reflectivity and high brightness, high surface hardness and good wear resistance.

[0052] In the embodiment of the present application, the thickness of the silicon carbide layer 121 is greater than or equal to 5 nm, which is conducive to cooperating with the third decorative sub-layer 122 to improve the surface reflectivity and brightness of the second decorative layer 12, and also helps to further improve the surface hardness of the second decorative layer 12. In the embodiment of the present application, the thickness of the silicon carbide layer 121 is 5 nm to 150 nm. Specifically, the thickness of the silicon carbide layer 121 can be, but is not limited to, 5 nm, 10 nm, 30 nm, 50 nm, 70 nm, 90 nm, 110 nm, 130 nm, or 150 nm, etc. In an embodiment, the thickness of the silicon carbide layer 121 is 10 nm to 50 nm. In another embodiment, the thickness of the silicon carbide layer 121 is 50 nm to 100 nm. In yet another embodiment, the thickness of the silicon carbide layer 121 is 30 nm to 75 nm. In yet another embodiment, the thickness of the silicon carbide layer 121 is 100 nm to 150 nm.

[0053] In the embodiment of the present application, the thickness of the third decorative sub-layer 122 is greater than or equal to 5 nm, which is conducive to cooperating with the silicon carbide layer 121 to improve the surface reflectivity and brightness of the second decorative layer 12. In the embodiment of the present application, the thickness of the third decorative sub-layer 122 is 5 nm to 200 nm. Specifically, the thickness of the third decorative sub-layer 122 can be, but is not limited to, 10 nm, 30 nm, 45 nm, 50 nm, 65 nm, 80 nm, 100 nm, 115 nm, 130 nm, 150 nm, 170 nm, or 200 nm, etc. In an embodiment, the thickness of the third decorative sub-layer 122 is 5 nm to 20 nm. In another embodiment, the thickness of the third decorative sub-layer 122 is 50 nm to 100 nm. In yet another embodiment, the thickness of the third decorative sub-layer 122 is 100 nm to 150 nm. In yet another embodiment, the thickness of the third decorative sub-layer 122 is 10 nm to 50 nm. In yet another embodiment, the thickness of the third decorative sub-layer 122 is 100 nm to 150 nm. In yet another embodiment, the thickness of the third decorative sub-layer 122 is 150 nm to 200 nm.

[0054] In the embodiment of the present application, the thickness of the second decorative layer 12 is less than or equal to 1000 nm. The second decorative layer 12 with a smaller thickness can achieve high reflectivity, high brightness, and high surface hardness, and is more conducive to the use of the decorative film 10. In an embodiment, the thickness of the second decorative layer 12 is 400 nm to 1000 nm. Specifically, the thickness of the second decorative layer 12 can be, but is not limited to, 400 nm to 600 nm, 600 nm to 800 nm, 800 nm to 1000 nm, or 500 nm to 750 nm, etc.

[0055] In one embodiment, the second decorative layer 12 includes, in the stacking direction, a 5-20 nm thick silicon oxynitride layer, a 100-150 nm thick silicon nitride layer, a 10-100 nm thick silicon carbide layer 121, a 50-100 nm thick silicon nitride layer, a 100-150 nm thick silicon oxynitride layer, a 10-50 nm thick silicon nitride layer, a 10-100 nm thick silicon carbide layer 121, a 5-20 nm thick silicon nitride layer, and a 5-20 nm thick silicon oxynitride layer, in this order. In a specific embodiment, the second decorative layer 12 includes, in the stacking direction, a 15 nm thick silicon oxynitride layer, a 70 nm thick silicon nitride layer, a 115 nm thick silicon carbide layer 121, a 66 nm thick silicon nitride layer, a 128 nm thick silicon oxynitride layer, a 35 nm thick silicon nitride layer, a 30 nm thick silicon carbide layer 121, a 15 nm thick silicon nitride layer, and a 7 nm thick silicon oxynitride layer, in this order. In another embodiment, the second decorative layer 12 includes, in the stacking direction, a 5-20 nm thick silicon oxynitride layer, a 50-100 nm thick silicon nitride layer, a 100-150 nm thick silicon oxynitride layer, a 5-20 nm thick silicon nitride layer, a 50-100 nm thick silicon carbide layer 121, a 50-100 nm thick silicon nitride layer, a 50-100 nm thick silicon carbide layer 121, a 10-50 nm thick silicon nitride layer, a 10-50 nm thick silicon carbide layer 121, a 10-50 nm thick silicon nitride layer, a 5-20 nm thick silicon oxynitride layer, in this order. In a specific embodiment, the second decorative layer 12 includes, in the stacking direction, a 10 nm thick silicon oxynitride layer, a 78 nm thick silicon nitride layer, a 130 nm thick silicon oxynitride layer, a 15 nm thick silicon nitride layer, a 72 nm thick silicon carbide layer 121, a 60 nm thick silicon nitride layer, a 65 nm thick silicon carbide layer 121, a 15 nm thick silicon nitride layer, a 20 nm thick silicon carbide layer 121, a 28 nm thick silicon nitride layer, and a 10 nm thick silicon oxynitride layer, in this order. The second decorative layer 12 described above has a reflectance of 60% or more, a brightness of 80 or more, and a surface hardness of 25 GPa or more.

[0056] In the embodiments of the present application, the second decorative layer 12 is formed by physical vapor deposition (PVD). In an embodiment of the present application, the second decorative layer 12 is formed by sputtering. In an embodiment, a silicon target and a graphite target are used and inert gas is introduced to form a silicon carbide layer 121 by sputtering. In another embodiment, a silicon carbide target is used and inert gas is introduced to form a silicon carbide layer 121 by sputtering. In the present application, the target material and the gas (including inert gas and reactive gas, such as argon, nitrogen, oxygen, etc.) to be introduced can be selected according to the material of the third decorative sub-layer 122. In a specific embodiment, a silicon target is used and nitrogen and oxygen are introduced to form a 5-20 nm thick silicon oxynitride layer by sputtering deposition; the introduction of oxygen is stopped and a 50-100 nm thick silicon nitride layer is formed by sputtering deposition; oxygen is introduced and a 100-150 nm thick silicon oxynitride layer is formed by sputtering deposition; the introduction of oxygen is stopped and a 5-20 nm thick silicon nitride layer is formed by sputtering deposition; a silicon target and a graphite target are used and inert gas is introduced to form a 50-100 nm thick silicon carbide layer 121 by sputtering deposition; a silicon target is used and nitrogen is introduced to form a 50-100 nm thick silicon nitride layer by sputtering deposition; a silicon target and a graphite target are used and inert gas is introduced to form a 50-100 nm thick silicon carbide layer 121 by sputtering deposition; a silicon target is used and nitrogen is introduced to form a 10-50 nm thick silicon nitride layer by sputtering deposition; a silicon target and a graphite target are used and inert gas is introduced to form a 10-50 nm thick silicon carbide layer 121 by sputtering deposition; a silicon target is used and nitrogen is introduced to form a 10-50 nm thick silicon nitride layer by sputtering deposition; oxygen is introduced and a 5-20 nm thick silicon oxynitride layer is formed by sputtering deposition, thereby obtaining a second decorative layer 12 with high saturated champagne gold effect.

[0057] In the embodiments of the present application, the decorative film 10 further comprises a hardening layer 13 disposed on the surface of the first decorative layer 11 or the second decorative layer 12. By disposing the hardening layer 13, the wear resistance of the surface of the decorative film 10 is improved. Please refer to Figure 10 In another embodiment of the present application, the structure of the decorative film is shown in the schematic diagram. The decorative film 10 comprises a first decorative layer 11 and a hardening layer 13 disposed on the surface of the first decorative layer 11. Please refer to Figure 11 In another embodiment of the present application, the structure of the decorative film is shown in the schematic diagram. The decorative film 10 comprises a second decorative layer 12 and a hardening layer 13 disposed on the surface of the second decorative layer 12. Please refer to Figure 12 In another embodiment of the present application, the structure of the decorative film is shown in the schematic diagram. The decorative film 10 comprises a first decorative layer 11, a second decorative layer 12 and a hardening layer 13 disposed in layers. Please refer to Figure 13The structure schematic diagram of the decorative film provided for another embodiment of the present application, the decorative film 10 includes the second decorative layer 12, the first decorative layer 11 and the hardening layer 13 which are stacked. It can be understood that the second decorative layer 12 has high surface hardness, and the hardening layer 13 can not be arranged on the surface of the second decorative layer 12, so as to ensure the ultra-thin thickness of the decorative film 10; of course, the hardening layer 13 can be continuously arranged on the surface of the second decorative layer 12, which can play a further protection role and improve the service life of the decorative film 10.

[0058] In the embodiment of the present application, the thickness of the hardening layer 13 is 100 nm-2000 nm. Specifically, the thickness of the hardening layer 13 can be but is not limited to 100 nm, 250 nm, 500 nm, 750 nm, 1000 nm, 1200 nm, 1500 nm, 1650 nm, 1800 nm or 1900 nm, etc. In an embodiment, the thickness of the hardening layer 13 is 100 nm-800 nm. In another embodiment, the thickness of the hardening layer 13 is 500 nm-1500 nm. In still another embodiment, the thickness of the hardening layer 13 is 1000 nm-2000 nm.

[0059] In the embodiment of the present application, the material of the hardening layer 13 includes at least one of silicon oxynitride, silicon nitride, aluminum nitride, aluminum oxynitride, silicon carbide, silicon carbonitride, titanium nitride, chromium nitride and aluminum titanium nitride. In the embodiment of the present application, the hardening layer 13 includes at least one of a silicon oxynitride layer, a silicon nitride layer, an aluminum nitride layer, an aluminum oxynitride layer, a silicon carbide layer 121, a silicon carbonitride layer, a titanium nitride layer, a chromium nitride layer and an aluminum titanium nitride layer. In the present application, the transmittance of silicon carbonitride, titanium nitride, chromium nitride and aluminum titanium nitride is slightly low, in order to ensure the high light transmittance of the decorative film 10, when the hardening layer 13 contains the silicon carbonitride layer, the titanium nitride layer, the chromium nitride layer and the aluminum titanium nitride layer, the total thickness of the silicon carbonitride layer, the titanium nitride layer, the chromium nitride layer and the aluminum titanium nitride layer is less than 500 nm.

[0060] In the embodiments of the present application, the hardening layer 13 comprises at least one silicon oxynitride layer and at least one silicon nitride layer which are stacked. In the embodiments of the present application, the silicon oxynitride layer in the hardening layer 13 is in contact with the first decorative layer 11 or the second decorative layer 12, or the silicon nitride layer in the hardening layer 13 is in contact with the first decorative layer 11 or the second decorative layer 12, and no limitation is made to this. In an embodiment of the present application, the hardening layer 13 comprises a silicon oxynitride layer and a silicon nitride layer which is arranged on the surface of the silicon oxynitride layer. In another embodiment of the present application, the hardening layer 13 comprises silicon oxynitride layers and silicon nitride layers which are alternately stacked. It can be understood that at least one of the silicon oxynitride layers and the silicon nitride layers has a layer number greater than or equal to 2. In a specific embodiment, the hardening layer 13 comprises a silicon oxynitride layer, a silicon nitride layer and a silicon oxynitride layer which are stacked. In another specific embodiment, the hardening layer 13 comprises a silicon nitride layer, a silicon oxynitride layer and a silicon nitride layer which are stacked. In yet another specific embodiment, the hardening layer 13 comprises a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer and a silicon oxynitride layer which are stacked. In the embodiments of the present application, the thickness of the silicon oxynitride layer is 10 nm-2000 nm, and the thickness of the silicon nitride layer is 50 nm-2000 nm, which is beneficial to the cooperation of the silicon oxynitride layer and the silicon nitride layer to realize a film layer with high surface hardness. In an embodiment, the thickness of the silicon oxynitride layer is 10 nm-50 nm, 40 nm-80 nm, 50 nm-100 nm, 500 nm-1000 nm, 1000 nm-1500 nm or 1500 nm-2000 nm, etc. In another embodiment, the thickness of the silicon nitride layer is 50 nm-100 nm, 50 nm-200 nm, 80 nm-150 nm, 100 nm-200 nm, 120 nm-200 nm, 500 nm-1000 nm, 1000 nm-1500 nm or 1500 nm-2000 nm, etc. In the embodiments of the present application, along the stacking direction, the thickness of the silicon oxynitride layer in the hardening layer 13 can first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease; the thickness of the silicon nitride layer in the hardening layer 13 can first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease. In the present application, the stacking direction is the direction from the hardening layer 13 to the human eye. In the embodiments of the present application, along the stacking direction, the thickness of the silicon oxynitride layer in the hardening layer 13 gradually increases, and the thickness of the silicon nitride layer in the hardening layer 13 first decreases and then increases. The inventors have found that the arrangement of the silicon oxynitride layer and the silicon nitride layer can significantly improve the surface hardness of the hardening layer 13.In an embodiment, along the stacking direction, the hardening layer 13 comprises, in sequence, a 10-50 nm thick silicon oxynitride layer, a 100-200 nm thick silicon nitride layer, a 50-100 nm thick silicon oxynitride layer, a 50-100 nm thick silicon nitride layer, a 50-100 nm thick silicon oxynitride layer, and a 50-100 nm thick silicon nitride layer, and the thickness of the silicon oxynitride layers in the hardening layer 13 gradually increases along the stacking direction, and the thickness of the silicon nitride layers in the hardening layer 13 first decreases and then increases. In a specific embodiment, along the stacking direction, the hardening layer 13 comprises, in sequence, a 10 nm thick silicon oxynitride layer, a 125 nm thick silicon nitride layer, a 60 nm thick silicon oxynitride layer, a 58 nm thick silicon nitride layer, a 65 nm thick silicon oxynitride layer, and a 370 nm thick silicon nitride layer.

[0061] In the embodiments of the present application, the surface hardness of the hardening layer 13 is greater than or equal to 16 GPa, further improving the surface wear resistance of the decorative film 10. Specifically, the surface hardness of the hardening layer 13 can be, but is not limited to, greater than or equal to 16 GPa, 17 GPa, 18 GPa, 19 GPa, 20 GPa, 21 GPa, 22 GPa, 23 GPa, 24 GPa, 25 GPa, 26 GPa, etc. In an embodiment, the surface hardness of the hardening layer 13 is 16-25 GPa. In another embodiment, the surface hardness of the hardening layer 13 is 18-20 GPa. In yet another embodiment, the surface hardness of the hardening layer 13 is 16-20 GPa.

[0062] In the embodiments of the present application, the hardening layer 13 is formed by physical vapor deposition (PVD). In an embodiment of the present application, the hardening layer 13 is formed by sputtering. In an embodiment, a silicon target is used and nitrogen and oxygen are introduced to form a silicon oxynitride layer by sputtering. In another embodiment, a silicon target is used and nitrogen is introduced to form a silicon nitride layer by sputtering. In a specific embodiment, a silicon target is used, nitrogen and oxygen are introduced, and a 10-50 nm thick silicon oxynitride layer is formed by sputtering deposition; the introduction of oxygen is stopped and a 100-200 nm thick silicon nitride layer is formed by continuous sputtering deposition; nitrogen and oxygen are introduced again, and a 50-100 nm thick silicon oxynitride layer is formed by sputtering deposition; the introduction of oxygen is stopped and a 50-100 nm thick silicon nitride layer is formed by continuous sputtering deposition; nitrogen and oxygen are introduced again, and a 50-100 nm thick silicon oxynitride layer is formed by sputtering deposition; the introduction of oxygen is stopped and a 50-100 nm thick silicon nitride layer is formed by continuous sputtering deposition, thereby obtaining the hardening layer 13.

[0063] The present application also provides a shell assembly 100 comprising a shell 20 and the decorative film 10 of any of the above embodiments disposed on the surface of the shell 20. Please refer to Figure 14A structural schematic diagram of a housing assembly according to an embodiment of the present application is provided, the housing assembly 100 comprises a housing 20 and a decorative film 10 arranged on the surface of the housing 20.

[0064] In the present application, the shape, size and material of the housing 20 are not limited, and can be selected and designed according to actual needs. In an embodiment, the shape of the housing 20 can be a 2D shape, a 2.5D shape or a 3D shape. In another embodiment, the thickness of the housing 20 is 0.1mm-1.1mm, for example, the thickness of the housing 20 can be 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm or 1.1mm, etc., so that the housing 20 can meet the requirements of impact resistance, and not too thick. In the present application, the housing 20 can be an equal-thickness shell or a non-equal-thickness shell, such as a gradually-thickness shell, thereby realizing different visual effects. In the present application, the material of the housing 20 can be but is not limited to any known material that can be used for the housing 20 of the electronic device 200, such as plastic, glass (such as smooth glass, frosted glass, etc., which can also be strengthened glass, etc.), ceramic, metal (such as aluminum alloy, stainless steel, etc.), etc. In an embodiment, the material of the housing 20 can further include reinforcing materials, such as glass fibers, carbon fibers, etc., thereby further improving the mechanical properties of the housing assembly 100. In a specific embodiment, when the material of the housing 20 is glass, the reflectivity and brightness of the glass surface can be improved by arranging the first decorative layer 11; the reflectivity, brightness and surface hardness of the glass surface can be improved by arranging the second decorative layer 12; and the scratch resistance and wear resistance of the glass surface can be improved by further arranging the hardening layer 13. In an embodiment, the visible light transmittance of the housing 20 is greater than or equal to 60% (such as greater than or equal to 65%, 70%, 75%, 80%, 85%, 90%, etc.). This is conducive to arranging other film layers, thereby further improving the appearance effect of the housing assembly 100. In an embodiment, the surface of the housing 20 has a texture, thereby improving the appearance effect of the housing assembly 100. Specifically, the height of the texture can be but is not limited to 1μm-5μm (such as 1μm, 2μm, 3μm, 4μm or 5μm, etc.).

[0065] In the present application, the housing 20 comprises an outer surface and an inner surface arranged oppositely. In an embodiment, the decorative film 10 is arranged on the outer surface of the housing 20. The inventors have found that when the decorative film 10 is arranged on the inner surface of the housing 20, it is easily affected by the diffuse reflection of the surface of the housing 20, which is not conducive to realizing the high reflectivity and high brightness effect of the housing assembly 100; by arranging the decorative film 10 on the outer surface of the housing 20, the high reflectivity and high brightness appearance effect of the decorative film 10 can be realized, and the influence of the housing 20 on the appearance effect of the decorative film 10 can be avoided.

[0066] In this application, when the first decorative layer 11 is in direct contact with the housing 20, the first decorative sublayer 111 in the first decorative layer 11 can be in direct contact with the housing 20, or the second decorative sublayer 112 in the first decorative layer 11 can be in direct contact with the housing 20; when the second decorative layer 12 is in direct contact with the housing 20, the silicon carbide layer 121 in the second decorative layer 12 can be in direct contact with the housing 20, or the third decorative sublayer 122 in the second decorative layer 12 can be in direct contact with the housing 20, and there is no limitation on this.

[0067] Please see Figure 15 This is a schematic diagram of the structure of a housing assembly provided in another embodiment of this application. The housing assembly 100 also includes a substrate 30, which is disposed between the housing 20 and the decorative film 10. The substrate 30 improves the bonding force between the housing 20 and the decorative film 10, thereby enhancing the reliability of the housing assembly 100. In this embodiment, the substrate 30 is made of silicon dioxide. Silicon dioxide can bond with the housing 20 and the decorative film 10, thereby improving the reliability of the housing assembly 100. In this embodiment, the thickness of the substrate 30 is 2nm-20nm. Specifically, the thickness of the substrate 30 can be, but is not limited to, 2nm, 7nm, 8nm, 10nm, 12nm, 15nm, 17nm, or 20nm. A thinner silicon dioxide layer does not have optical effects but serves a connecting and bonding function. In one embodiment, the thickness of the substrate 30 is 5nm-20nm. In this application, the substrate 30 can be formed by physical vapor deposition. In one embodiment, the substrate 30 is formed by sputtering. In one embodiment, a silicon target is used and oxygen is introduced to form the underlayer 30 by sputter deposition.

[0068] In this embodiment, the housing assembly 100 further includes an anti-fingerprint layer 40. By providing the anti-fingerprint layer 40, the anti-fingerprint effect on the surface of the housing assembly 100 is improved, enhancing its resistance to dirt and grime. It is understood that the anti-fingerprint layer 40 is located on the outermost side of the housing assembly 100, thereby providing a protective function. Please refer to... Figure 16 This is a schematic diagram of the structure of a housing assembly provided in another embodiment of this application. The housing assembly 100 includes a housing 20, a decorative film 10, and an anti-fingerprint layer 40 stacked together. In this embodiment, the thickness of the anti-fingerprint layer 40 is 10nm-50nm. Specifically, the thickness of the anti-fingerprint layer 40 can be, but is not limited to, 10nm, 20nm, 30nm, 40nm, or 50nm. In this embodiment, the material of the anti-fingerprint layer 40 includes fluorinated organic compounds, such as perfluoropolyether. In this application, the anti-fingerprint layer 40 can be formed by deposition. In one embodiment, the anti-fingerprint layer 40 is formed by evaporation deposition.

[0069] In the embodiment of the present application, the shell assembly 100 further comprises a connecting layer 50, which is arranged between the decorative film 10 and the anti-fingerprint layer 40. By arranging the connecting layer 50, the bonding force between the decorative film 10 and the anti-fingerprint layer 40 is improved. Please refer to Figure 17 For another embodiment of the present application, a structural schematic diagram of a shell assembly is provided, which comprises a shell 20, a decorative film 10, a connecting layer 50 and an anti-fingerprint layer 40 arranged in sequence. In the embodiment of the present application, the material of the connecting layer 50 comprises silicon dioxide. The silicon dioxide can be bonded with the anti-fingerprint layer 40 and the decorative film 10, thereby improving the reliability of the shell assembly 100. In an embodiment, the shell assembly 100 comprises a shell 20, a primer layer 30, a decorative film 10, a connecting layer 50 and an anti-fingerprint layer 40 arranged in sequence. In the embodiment of the present application, the thickness of the connecting layer 50 is 10 nm-50 nm. Specifically, the thickness of the connecting layer 50 can be but is not limited to 10 nm, 20 nm, 30 nm, 40 nm or 50 nm, etc. It can be understood that when the decorative film 10 has a first decorative sub-layer 111, and the first decorative sub-layer 111 is connected with the anti-fingerprint layer 40, the connecting layer 50 can not be arranged, and the reliable connection with the anti-fingerprint layer 40 can be realized through the silicon dioxide in the first decorative sub-layer 111.

[0070] In the embodiments of the present application, the shell assembly 100 comprises the shell 20 and the primer layer 30, the first decorative layer 11, the hardening layer 13, the connecting layer 50 and the anti-fingerprint layer 40 arranged in sequence on the outer surface of the shell 20. In an embodiment, along the direction from the shell 20 to the anti-fingerprint layer 40, the first decorative layer 11 comprises the second decorative sub-layer 112, the first decorative sub-layer 111 and the second decorative sub-layer 112 arranged in sequence, and the hardening layer 13 comprises the silicon nitride layer and the silicon oxynitride layer arranged in sequence alternately. In another embodiment, along the direction from the shell 20 to the anti-fingerprint layer 40, the first decorative layer 11 comprises the second decorative sub-layer 112 with a thickness of 10-50 nm, the first decorative sub-layer 111 with a thickness of 100-150 nm, the second decorative sub-layer 112 with a thickness of 10-50 nm, the first decorative sub-layer 111 with a thickness of 100-150 nm, the second decorative sub-layer 112 with a thickness of 10-50 nm and the first decorative sub-layer 111 with a thickness of 50-100 nm arranged in sequence, the hardening layer 13 comprises the silicon oxynitride layer with a thickness of 10-50 nm, the silicon nitride layer with a thickness of 100-200 nm, the silicon oxynitride layer with a thickness of 50-100 nm, the silicon nitride layer with a thickness of 50-100 nm, the silicon oxynitride layer with a thickness of 50-100 nm and the silicon nitride layer with a thickness of 50-100 nm arranged in sequence, and the anti-fingerprint layer 40 has a thickness of 10-50 nm. In a specific embodiment, the shell assembly 100 comprises the shell 20 and the primer layer 30, the first decorative layer 11, the hardening layer 13, the connecting layer 50 and the anti-fingerprint layer 40 arranged in sequence on the outer surface of the shell 20, along the direction from the shell 20 to the anti-fingerprint layer 40, the first decorative layer 11 comprises the silicon layer with a thickness of 45 nm, the silicon dioxide layer with a thickness of 105 nm, the silicon layer with a thickness of 32 nm, the silicon dioxide layer with a thickness of 115 nm, the silicon layer with a thickness of 24 nm and the silicon dioxide layer with a thickness of 80 nm arranged in sequence, the hardening layer 13 comprises the silicon oxynitride layer with a thickness of 10 nm, the silicon nitride layer with a thickness of 125 nm, the silicon oxynitride layer with a thickness of 60 nm, the silicon nitride layer with a thickness of 58 nm, the silicon oxynitride layer with a thickness of 65 nm and the silicon nitride layer with a thickness of 370 nm arranged in sequence, and the anti-fingerprint layer 40 has a thickness of 25 nm. The surface reflectivity of the shell assembly 100 is about 94%, the brightness is about 97, and the surface hardness is about 16-18 GPa.

[0071] In the embodiments of the present application, the shell assembly 100 comprises the shell 20 and the primer layer 30, the second decorative layer 12, the connecting layer 50 and the anti-fingerprint layer 40 arranged in sequence on the outer surface of the shell 20. In an embodiment, the second decorative layer 12 comprises a silicon oxynitride layer, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, a silicon carbide layer 121, a silicon nitride layer and a silicon oxynitride layer arranged in sequence in the direction from the shell 20 to the anti-fingerprint layer 40. In another embodiment, the second decorative layer 12 comprises a 5nm-20nm-thick silicon oxynitride layer, a 50nm-100nm-thick silicon nitride layer, a 100nm-150nm-thick silicon oxynitride layer, a 5nm-20nm-thick silicon nitride layer, a 50nm-100nm-thick silicon carbide layer 121, a 50nm-100nm-thick silicon nitride layer, a 50nm-100nm-thick silicon carbide layer 121, a 10nm-50nm-thick silicon nitride layer, a 10nm-50nm-thick silicon carbide layer 121, a 10nm-50nm-thick silicon nitride layer, and a 5nm-20nm-thick silicon oxynitride layer arranged in sequence in the direction from the shell 20 to the anti-fingerprint layer 40. In a specific embodiment, the shell assembly 100 comprises the shell 20 and the primer layer 30, the second decorative layer 12, the connecting layer 50 and the anti-fingerprint layer 40 arranged in sequence on the outer surface of the shell 20, and the second decorative layer 12 comprises a 10nm-thick silicon oxynitride layer, a 78nm-thick silicon nitride layer, a 130nm-thick silicon oxynitride layer, a 15nm-thick silicon nitride layer, a 72nm-thick silicon carbide layer 121, a 60nm-thick silicon nitride layer, a 65nm-thick silicon carbide layer 121, a 15nm-thick silicon nitride layer, a 20nm-thick silicon carbide layer 121, a 28nm-thick silicon nitride layer and a 10nm-thick silicon oxynitride layer arranged in sequence in the direction from the shell 20 to the anti-fingerprint layer 40; the surface reflectivity of the shell assembly 100 is greater than or equal to 60%, the brightness is greater than or equal to 80, and the surface hardness is greater than or equal to 25GPa.

[0072] In the embodiments of the present application, the shell assembly 100 further comprises a color layer. The color layer is arranged to improve the appearance of the shell assembly 100, and the color of the color layer can be selected as required. In the present application, when the shell 20 is opaque, the color layer is arranged between the shell 20 and the decorative film 10; when the shell 20 is transparent, the color layer can be arranged between the shell 20 and the decorative film 10, or on the side surface of the shell 20 away from the decorative film 10.

[0073] In the embodiments of the present application, the shell assembly 100 further comprises a texture layer. The texture layer is arranged to improve the appearance of the shell assembly 100. The texture layer has a texture structure, and the pattern of the texture structure can be selected as required. In the present application, when the shell 20 is not light-transmissive, the texture layer is arranged between the shell 20 and the decorative film 10; when the shell 20 is light-transmissive, the texture layer can be arranged between the shell 20 and the decorative film 10, or can be arranged on the side surface of the shell 20 away from the decorative film 10.

[0074] In the embodiments of the present application, the shell assembly 100 further comprises a metal plating layer. The metal plating layer is arranged to make the shell assembly 100 have a metallic luster. In the present application, when the shell 20 is not light-transmissive, the metal plating layer is arranged between the shell 20 and the decorative film 10; when the shell 20 is light-transmissive, the metal plating layer can be arranged between the shell 20 and the decorative film 10, or can be arranged on the side surface of the shell 20 away from the decorative film 10. In the embodiments of the present application, the material of the metal plating layer comprises at least one of indium, chromium and tin. The metal plating layer is a non-conductive metal layer.

[0075] In the embodiments of the present application, the shell assembly 100 further comprises a light-shielding layer. The light-shielding layer is arranged to shield light on one side of the shell assembly 100. In an embodiment, the light-shielding layer is arranged on the inner surface of the shell 20, so as to shield the inside of the shell 20 when the shell 20 is used. In the embodiments of the present application, the visible light transmittance of the light-shielding layer is less than or equal to 5%.

[0076] The present application further provides a preparation method of the shell assembly 100, comprising forming the decorative film 10 on the surface of the shell 20 by physical vapor deposition, to obtain the shell assembly 100 in any of the above embodiments.

[0077] In the embodiments of the present application, the decorative film 10 can be formed by sputtering. The preparation methods of the first decorative layer 11 and the second decorative layer 12 are as described above, and will not be repeated here. In addition, when the decorative film 10 comprises the first decorative layer 11 and the second decorative layer 12, the order of preparation of the first decorative layer 11 and the second decorative layer 12 is not limited, and can be selected as required.

[0078] In the embodiments of the present application, the shell 20 is further cleaned before physical vapor deposition. The surface dirt is removed by cleaning, and the surface activity of the shell 20 is improved, which is beneficial to improve the bonding force. In an embodiment, the surface of the shell 20 is cleaned by plasma. The cleaning time can be, but is not limited to, 1 min-10 min (such as 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min or 9 min, etc.). In the present application, the cleaning and physical vapor deposition process can be carried out in a coating equipment. In an embodiment, the coating equipment is vacuumed to 0.001 Pa-0.005 Pa (such as 0.001 Pa, 0.002 Pa, 0.003 Pa, 0.004 Pa or 0.005 Pa, etc.). In the present application, the preparation method can further include processing the shell assembly 100, such as rough polishing, fine polishing, etc. by a numerical control machine tool, to improve the surface performance of the shell assembly 100.

[0079] The present application also provides an electronic device 200 comprising the shell assembly 100 in any of the above embodiments. By arranging the shell assembly 100, the appearance effect and texture of the electronic device 200 are improved, and the product competitiveness of the electronic device 200 is improved. It can be understood that the electronic device 200 can be, but is not limited to, a mobile phone, a tablet computer, a notebook computer, a watch, an MP3, an MP4, a GPS navigator, a digital camera, a vehicle, etc., and the shell assembly 100 can be, but is not limited to, a shell, a back shell, a battery cover, a front cover, a middle frame, a key cap, a watch dial, etc. of the electronic device 200. Please refer to Figure 18 The electronic device provided in an embodiment of the present application is shown in the schematic diagram. The electronic device 200 comprises the shell assembly 100 in any of the above embodiments. In an embodiment, the electronic device 200 further comprises a display screen connected with the shell assembly 100.

[0080] It should be noted that the terms "first", "second", "third" in the present application are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0081] The above provides a detailed description of the content provided by the embodiments of the present application. The principles and embodiments of the present application are described and explained in this paper. The above description is only used to help understand the method and core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, the specific embodiments and application scope will be changed; in view of the above, the content of the description should not be understood as a limitation of the present application.

Claims

1. A decorative film, characterized in that, The decorative film includes at least one of a first decorative layer and a second decorative layer. The first decorative layer comprises multiple layers of alternating first decorative sublayers and multiple layers of second decorative sublayers. The material of the first decorative sublayers includes silicon dioxide, and the material of the second decorative sublayers includes silicon. Along the stacking direction, the thickness of the multiple layers of the first decorative sublayers gradually increases, or gradually decreases, or first gradually increases and then gradually decreases, or first gradually decreases and then gradually increases; and / or, the thickness of the multiple layers of the second decorative sublayers gradually increases, or gradually decreases, or first gradually increases and then gradually decreases, or first gradually decreases and then gradually increases. The second decorative layer includes at least one silicon carbide layer and at least one third decorative sub-layer, wherein the refractive index difference between the silicon carbide layer and the third decorative sub-layer is greater than or equal to 0.5, and the material of the third decorative sub-layer includes at least one of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium nitride, and chromium nitride.

2. The decorative film as described in claim 1, characterized in that, The first decorative sublayer contains 70% or more silicon dioxide by mass, and / or the first decorative sublayer further includes at least one of silicon nitride, silicon oxynitride, niobium oxide, tantalum oxide, aluminum oxide, titanium oxide, and zirconium oxide; The second decorative sublayer contains silicon at a mass content greater than or equal to 70%, and / or the second decorative sublayer further includes at least one of aluminum, titanium, zirconium, tantalum, carbon, and chromium.

3. The decorative film as described in claim 1, characterized in that, The third decorative sublayer includes at least one silicon nitride layer and / or at least one silicon oxynitride layer; The second decorative layer includes multiple layers of the silicon carbide layer and multiple layers of the third decorative sublayer, wherein the silicon carbide layer and the third decorative sublayer are alternately stacked.

4. The decorative film as described in claim 3, characterized in that, The second decorative layer includes multiple layers of silicon carbide and multiple layers of silicon nitride, wherein the silicon carbide layers and the silicon nitride layers are alternately stacked; or The second decorative layer includes multiple layers of the silicon carbide layer and multiple layers of the silicon oxynitride layer, wherein the silicon carbide layer and the silicon oxynitride layer are alternately stacked; or The second decorative layer includes multiple layers of silicon carbide, multiple layers of silicon nitride, and multiple layers of silicon oxynitride, wherein the silicon carbide, silicon nitride, and silicon oxynitride layers are alternately stacked.

5. The decorative film as described in claim 1, characterized in that, The thickness of the first decorative layer is 60nm-1000nm; The thickness of the silicon carbide layer is greater than or equal to 5 nm; The thickness of the third decorative sublayer is greater than or equal to 5 nm.

6. The decorative film as described in claim 5, characterized in that, The thickness of the silicon carbide layer is 5nm-150nm; The thickness of the third decorative sublayer is 5nm-200nm.

7. The decorative film as described in claim 1, characterized in that, The decorative film further includes a hardening layer, which is disposed on the surface of the first decorative layer or the second decorative layer; The surface hardness of the hardened layer is greater than or equal to 16 GPa; The thickness of the hardening layer is 100nm-2000nm; The material of the hardening layer includes at least one of silicon oxynitride, silicon nitride, aluminum nitride, aluminum oxynitride, silicon carbide, silicon carbonitride, titanium nitride, chromium nitride, and titanium aluminum nitride.

8. The decorative film according to any one of claims 1-7, characterized in that, The decorative film further includes a hardening layer, which is disposed on the surface of the first decorative layer or the second decorative layer; the hardening layer includes multiple layers of silicon oxynitride and multiple layers of silicon nitride stacked together. Along the stacking direction, the thickness of the multiple silicon oxynitride layers may first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease. And / or, Along the stacking direction, the thickness of the multiple silicon nitride layers may first increase and then decrease, or first decrease and then increase, or gradually increase, or gradually decrease.

9. A housing assembly, characterized in that, It includes a housing and a decorative film disposed on the surface of the housing, wherein the decorative film is the decorative film according to any one of claims 1-8.

10. The housing assembly as claimed in claim 9, characterized in that, The housing assembly also includes a base layer disposed between the housing and the decorative film; The thickness of the substrate is 2nm-20nm; The base layer material includes silicon dioxide.

11. The housing assembly as claimed in claim 9, characterized in that, The housing assembly further includes an anti-fingerprint layer disposed on the surface of the decorative film away from the housing; The thickness of the anti-fingerprint layer is 10nm-50nm.

12. The housing assembly as claimed in claim 11, characterized in that, The housing assembly further includes a connecting layer disposed between the decorative film and the anti-fingerprint layer; The thickness of the connecting layer is 10nm-50nm; The material of the connecting layer includes silicon dioxide.

13. A method for preparing a housing assembly, characterized in that, include: A decorative film is formed on the surface of a housing using physical vapor deposition to obtain a housing assembly. The decorative film includes at least one of a first decorative layer and a second decorative layer. The first decorative layer comprises multiple alternating layers of first decorative sublayers and multiple layers of second decorative sublayers. The first decorative sublayers are made of silicon dioxide, and the second decorative sublayers are made of silicon. Along the stacking direction, the thickness of the multiple layers of first decorative sublayers gradually increases, or gradually decreases, or first gradually increases and then gradually decreases, or first gradually decreases and then gradually increases; and / or, the thickness of the multiple layers of second decorative sublayers gradually increases, or gradually decreases, or first gradually increases and then gradually decreases, or first gradually decreases and then gradually increases. The second decorative layer includes at least one silicon carbide layer and at least one third decorative sublayer. The refractive index difference between the silicon carbide layer and the third decorative sublayer is greater than or equal to 0.

5. The material of the third decorative sublayer includes at least one of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium nitride, and chromium nitride.

14. An electronic device, characterized in that, The device includes a housing assembly, the housing assembly comprising a housing and a decorative film disposed on the surface of the housing, the decorative film being the decorative film according to any one of claims 1-8.

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