Silicon-based display panel and preparation method of its vapor deposition layer, and mask
By setting a support structure on the surface of the masking portion of the mask plate, the contact area between the mask plate and the silicon-based substrate during the evaporation process of the silicon-based display panel is reduced, the dust particle transfer problem is solved, and the cleanliness and product performance of the silicon-based display panel are improved.
Patent Information
- Application Number
- CN202211659294.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-22
- Publication Date
- 2025-03-11
- Estimated Expiration
- 2042-12-22
AI Technical Summary
During the evaporation process of the silicon-based microdisplay panel, when the mask plate is bonded to the silicon-based substrate, dust particles are easily transferred to the silicon-based substrate, resulting in surface contamination and affecting the device packaging effect and product performance.
A mask plate is designed, and a support structure is provided on the first surface of the shielding portion, and the size of the support structure is smaller than the size of the shielding portion, so that only the support structure comes into contact with the silicon-based substrate during the evaporation process, reducing the contact area and reducing dust particles transfer.
By reducing the contact area between the mask plate and the silicon-based substrate, the transfer of dust particles is reduced, the cleanliness of the silicon-based substrate is improved, and the device packaging effect and product performance are improved.
Smart Images
Figure CN115896692B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of display technology, and in particular to a silicon-based display panel and a method for preparing an evaporation layer thereof, and a mask. Background Art
[0002] Vacuum evaporation is a key step in the production process of OLED panels, and the mask plate, which is used to evaporate organic materials, metal materials and other evaporation layers, is its key structural component. Compared with large-sized OLED panels, silicon-based micro display panels have smaller sizes and smaller pixel units, so they have stricter requirements on the size and quantity of dust particles.
[0003] In the prior art, when evaporating the deposition layer in the silicon-based micro display panel, the mask is tightly attached to the surface of the silicon-based substrate, and the evaporated material passes through the mask openings with specific patterns and is deposited on the surface of the silicon-based substrate. However, after the mask is attached to the silicon-based substrate, the dust particles on the mask will be transferred to the silicon-based substrate, resulting in an increase in dust particles on the surface of the silicon-based substrate, which will affect the packaging effect of the OLED device, cause device failure, produce black spots, and affect product performance. Summary of the invention
[0004] The present invention provides a silicon-based display panel and a method for preparing an evaporation layer thereof, and a mask plate, so as to solve the problems existing in the prior art, improve the cleanliness of the silicon-based substrate, and thus improve product performance.
[0005] In a first aspect, the present invention provides a mask plate for preparing an evaporation layer of a silicon-based display panel, comprising: at least one opening portion and a shielding portion surrounding each of the opening portions;
[0006] A supporting structure is provided on the first surface of the shielding portion; in a direction parallel to the first surface of the shielding portion, a size of the supporting structure is smaller than a size of the shielding portion;
[0007] When the evaporated deposition layer is evaporated using the mask, the support structure is in contact with the silicon-based substrate of the silicon-based display panel.
[0008] Optionally, in a direction perpendicular to the first surface of the shielding portion, a height H of the support structure has a value range of 40 μm<H<80 μm.
[0009] Optionally, the support structure includes a plurality of support columns that are dispersedly arranged.
[0010] Optionally, when the mask plate includes a plurality of the openings, the plurality of the openings are arranged in an array; and the support column is located between two adjacent rows and / or two adjacent columns of the openings.
[0011] Optionally, in a row direction of the openings, the support pillars do not overlap with the openings; and / or in a column direction of the openings, the support pillars do not overlap with the openings.
[0012] Optionally, the contact area S between each support column and the contact surface of the silicon-based substrate is in the range of: 0<S<1mm 2 .
[0013] Optionally, the support structure comprises a support ring surrounding all the opening structures.
[0014] Optionally, the material of the mask includes a weak magnetic material.
[0015] In a second aspect, the present invention provides a method for preparing a vapor-deposited layer in a silicon-based display panel, comprising:
[0016] Providing a silicon-based substrate;
[0017] Placing any of the above-mentioned mask plates on one side of the silicon-based substrate; the support structure of the mask plate is in contact with the silicon-based substrate;
[0018] The evaporation material is evaporated to a side of the silicon-based substrate close to the mask through the opening of the mask to form an evaporation layer of the silicon-based display panel.
[0019] In a third aspect, the present invention provides a silicon-based display panel prepared using any of the above-mentioned mask plates.
[0020] The technical solution provided by the present invention provides a supporting structure on the first surface of the shielding portion, and in a direction parallel to the first surface of the shielding portion, the size of the supporting structure is smaller than the size of the shielding portion, so that when the mask is used to evaporate the vapor-deposited layer of the silicon-based display panel, only the supporting structure is in contact with the silicon-based substrate of the silicon-based display panel, thereby reducing the contact area between the mask and the silicon-based substrate during vapor deposition, thereby reducing the transfer of dust particles attached to the mask to the silicon-based substrate, thereby improving the cleanliness of the silicon-based substrate, improving the packaging effect and improving product performance.
[0021] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0023] Figure 1 A top view of a mask provided by an embodiment of the present invention;
[0024] Figure 2 A cross-sectional view of a mask along a diameter direction provided by an embodiment of the present invention;
[0025] Figure 3 The present invention provides a flow chart of a method for preparing an evaporation layer in a silicon-based display panel according to an embodiment of the present invention. DETAILED DESCRIPTION
[0026] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein.
[0028] The embodiment of the present invention provides a mask plate for preparing an evaporation layer of a silicon-based display panel. Figure 1 A top view of a mask provided by an embodiment of the present invention; Figure 2 A cross-sectional view of a mask along the diameter direction provided by an embodiment of the present invention. Figure 1 and Figure 2 As shown, the mask plate 100 includes at least one opening portion 10 and a shielding portion 20 surrounding each opening portion 10; a supporting structure 21 is provided on the first surface of the shielding portion 20; in a direction parallel to the first surface of the shielding portion 20, the size of the supporting structure 21 is smaller than the size of the shielding portion 20; when the mask plate 100 is used to evaporate the evaporated layer, the supporting structure 21 is in contact with the silicon-based substrate 1 of the silicon-based display panel.
[0029] When the mask 100 is used to evaporate the evaporated layer of the silicon-based display panel, the evaporated material is evaporated onto the silicon-based substrate 1 of the silicon-based display panel through the opening 10 to form the evaporated layer; it should be noted that Figure 1 Only the case where the mask 100 includes 12 openings 10 arranged in an array is shown by way of example. In fact, the shape of the openings 10, the number of the openings 10 and the arrangement of the openings 10 can be set according to the design scheme of the silicon-based display panel, and the embodiment of the present invention does not impose any restrictions on this. When the mask 100 is used to evaporate the evaporated layer of the silicon-based display panel, the shielding portion 20 can shield the position on the silicon-based substrate 1 where the evaporation is not required, so that the evaporated layer is not formed at the position shielded by the shielding portion 20. A support structure 21 is provided on the first surface of the shielding portion 20. The cross section of the support structure 21 in the direction parallel to the first surface of the shielding portion 20 can be circular, triangular, trapezoidal, rectangular or irregular, etc. The embodiment of the present invention does not impose any restrictions on the shape of the cross section of the support structure 21 in the direction parallel to the first surface of the shielding portion 20, as long as it can be achieved that when the mask 100 is used for evaporation, the support structure 21 is in contact with the silicon-based substrate 1 of the silicon-based display panel, and the other parts of the mask 100 are not in contact with the silicon-based display panel. The size of the support structure 21 is smaller than that of the shielding portion 20 , so that when the mask 100 is used to evaporate the deposition layer of the silicon-based display panel, the support structure 21 contacts the silicon-based substrate 1 of the silicon-based display panel to reduce the contact area between the mask 100 and the silicon-based substrate 1 .
[0030] In an optional embodiment, the shielding portion 20 and the supporting structure 21 may be an integral structure, that is, the shielding portion 20 and the supporting structure 21 are made of the same material, which may be achieved by chemically etching a mask plate sheet having a certain thickness, wherein the position where the shielding portion 20 is provided with the supporting structure 21 is not chemically corroded, and other positions of the mask plate 100 are chemically corroded to a certain depth, so that the supporting structure 21 has a certain height relative to other positions of the mask plate 100 in a direction perpendicular to the first surface; after the chemical etching is completed, the opening portion 10 of the mask plate 100 is formed according to the design requirements, wherein the method for forming the mask plate opening portion 10 may refer to the method provided by the prior art, and this embodiment does not impose any limitation on this.
[0031] In this embodiment, a supporting structure is provided on the first surface of the shielding portion, and in a direction parallel to the first surface of the shielding portion, the size of the supporting structure is smaller than the size of the shielding portion, so that when the mask is used to evaporate the deposition layer of the silicon-based display panel, only the supporting structure is in contact with the silicon-based substrate of the silicon-based display panel, thereby reducing the contact area between the mask and the silicon-based substrate during evaporation, thereby reducing the transfer of dust particles attached to the mask to the silicon-based substrate, thereby improving the cleanliness of the silicon-based substrate, improving the packaging effect and improving the product performance.
[0032] Optional, continue to refer to Figure 1 and Figure 2 As shown, in the direction perpendicular to the first surface of the shielding portion 20, the range of the height H of the support structure 21 is: 40μm<H<80μm, preferably, the height H of the support structure 21=50μm. The smaller the height of the support structure 21, when the mask 100 is used to evaporate the evaporated layer of the silicon-based display panel, the smaller the distance between the other parts of the mask 100 and the silicon-based substrate 1 of the silicon-based display panel, and the easier it is for the dust particles attached to the other parts of the mask 100 to be transferred to the silicon-based substrate 1, resulting in an increase in the dust particles on the silicon-based substrate 1, affecting the packaging effect of the silicon-based display panel; on the contrary, the greater the height of the support structure 21, when the mask 100 is used to evaporate the evaporated layer of the silicon-based display panel, the farther the distance between the other parts of the mask 100 and the silicon-based substrate 1 of the silicon-based display panel, and the easier it is to generate an evaporation shadow area when the evaporation material is evaporated to the silicon-based substrate 1 of the silicon-based display panel through the opening 10, thereby affecting the product performance. When the height H of the support structure 21 is less than 40 μm, due to the small height of the support structure 21, when the mask plate 100 is used to evaporate the evaporated layer of the silicon-based display panel, the other parts of the mask plate 100 are too close to the silicon-based substrate 1 of the silicon-based display panel, so that the dust particles attached to the other parts of the mask plate 100 will also be transferred to the silicon-based substrate 1, and the purpose of improving the cleanliness of the silicon-based substrate 1 cannot be achieved; when the height H of the support structure 21 is greater than 80 μm, due to the large height of the support structure 21, when the mask plate 100 is used to evaporate the evaporated layer of the silicon-based display panel, the other parts of the mask plate 100 are too far away from the silicon-based substrate 1 of the silicon-based display panel, and when the evaporated material is evaporated through the opening 10 to the silicon-based substrate 1 of the silicon-based display panel, an evaporation shadow area will be generated, affecting the display effect of the product. Therefore, by limiting the height H of the support structure 21 in the direction perpendicular to the first surface of the shielding portion 20 to 40μm<H<80μm, it is possible to reduce the transfer of dust particles attached to the mask plate 100 to the silicon-based substrate 1, thereby improving the cleanliness of the silicon-based substrate 1, and also avoid generating a vapor deposition shadow area to affect the product display effect.
[0033] Optional, continue to refer to Figure 1 and Figure 2 As shown, the support structure 21 includes a plurality of support columns 211 that are dispersedly arranged, so that when the mask plate 100 is used to evaporate the deposition layer of the silicon-based display panel, the support effect of the support structure 21 can be improved.
[0034] Optional, continue to refer to Figure 1 and Figure 2As shown, when the mask plate 100 includes a plurality of openings 10, the plurality of openings 10 are arranged in an array; the support pillars 211 are located between two adjacent rows and / or two adjacent columns of openings 10, so that it can be ensured that support pillars 211 are arranged around each opening 10, so that when the mask plate 100 is used to evaporate the evaporated layer of the silicon-based display panel, and the evaporated material is evaporated through the openings 10 onto the silicon-based substrate 1 of the silicon-based display panel to form the evaporated layer, no depression will occur around the opening 10, thereby ensuring that the pattern of the evaporated layer is the same as the shape of the opening 10, and no shadow area will be generated, thereby improving product quality.
[0035] Optional, continue to refer to Figure 1 and Figure 2 As shown, in the row direction of the opening 10, the support column 211 does not overlap with the opening 10; and / or, in the column direction of the opening 10, the support column 211 does not overlap with the opening 10. In this way, it can be ensured that when the mask plate 100 is used to evaporate the evaporated layer of the silicon-based display panel, and the evaporated material is evaporated through the opening 10 onto the silicon-based substrate 1 of the silicon-based display panel to form the evaporated layer, the support column 211 will not block the opening 10, so as to ensure that the pattern of the evaporated layer is the same as the shape of the opening 10.
[0036] Optionally, the contact area S between each support column 211 and the silicon-based substrate 1 is in the range of 0<S<1 mm 2 Preferably, the contact area S between each support column 211 and the silicon-based substrate 1 is 0.25 mm 2 The smaller the contact area between the support column 211 and the silicon-based substrate 1, the fewer dust particles attached to the mask plate 100 are transferred to the silicon-based substrate 1 when the mask plate 100 is used to evaporate the deposition layer of the silicon-based display panel, and the higher the cleanliness of the silicon-based substrate 1; on the contrary, the larger the contact area between the support column 211 and the silicon-based substrate 1, the more dust particles attached to the mask plate 100 are transferred to the silicon-based substrate 1 when the mask plate 100 is used to evaporate the deposition layer of the silicon-based display panel, and the worse the cleanliness of the silicon-based substrate 1. When the contact area S of the contact surface between each support column 211 and the silicon-based substrate 1 is greater than 1mm 2 When the support column 211 is in contact with the silicon-based substrate 1, the contact area between the support column 211 and the silicon-based substrate 1 is too large, so when the mask 100 is used to evaporate the deposition layer of the silicon-based display panel, too many dust particles attached to the mask 100 are transferred to the silicon-based substrate 1, thereby failing to achieve the purpose of improving the cleanliness of the silicon-based substrate 1. Therefore, the contact area between each support column 211 and the silicon-based substrate 1 is limited to 0<S<1mm 2 , the number of dust particles attached to the mask plate 100 transferred to the silicon-based substrate 1 when the mask plate 100 is used to evaporate the deposition layer of the silicon-based display panel can be reduced, thereby achieving the purpose of improving the cleanliness of the silicon-based substrate 1.
[0037] Optional, continue to refer to Figure 1 and Figure 2 As shown, the support structure 21 includes a support ring 212 surrounding all the opening structures, thereby further improving the support effect of the support structure 21. Since the edge portion of the silicon-based substrate 1 of the silicon-based display panel is an invalid area, the support structure 21 of the mask 100 can be provided with a support ring 212 at a position surrounding all the opening structures. When the mask 100 is used to evaporate the deposition layer of the silicon-based display panel, the support ring 212 contacts the invalid area of the silicon-based substrate 1 of the silicon-based display panel. Therefore, the support ring 212 will not affect the cleanliness of the silicon-based substrate 1 of the silicon-based display panel.
[0038] Optionally, the material of the mask 100 includes a weak magnetic material, and preferably, the material of the mask 100 can be 304 stainless steel (SUS304). When the mask 100 is used to evaporate the evaporated layer of the silicon-based display panel, a strong magnet is arranged on the side of the silicon-based substrate 1 of the silicon-based display panel away from the mask 100, so that the mask 100 can be closely attached to the silicon-based substrate 1 of the silicon-based display panel. However, the greater the interaction force between the mask 100 and the silicon-based substrate 1 of the silicon-based display panel, the easier it is for the dust particles attached to the mask 100 to be transferred to the silicon-based substrate 1, affecting the cleanliness of the silicon-based substrate 1. The material of the mask plate 100 provided in the embodiment of the present invention includes weak magnetic material, so that under the premise of ensuring the firm bonding between the mask plate 100 and the silicon-based substrate 1 of the silicon-based display panel, the interaction force when the mask plate 100 and the silicon-based substrate 1 of the silicon-based display panel are bonded can be reduced, so that dust particles attached to the mask plate 100 are not easily transferred to the silicon-based substrate 1, thereby further improving the cleanliness of the silicon-based substrate 1, improving the packaging effect and improving product performance.
[0039] Based on the same inventive concept, an embodiment of the present invention further provides a method for preparing a vapor-deposition layer in a silicon-based display panel. Figure 3 A flow chart of a method for preparing a vapor-deposited layer in a silicon-based display panel provided in an embodiment of the present invention, referring to Figure 3 As shown, the method for preparing the evaporated layer in the silicon-based display panel includes:
[0040] S110. Provide a silicon-based substrate.
[0041] S120. Place the mask provided by any embodiment of the present invention on one side of a silicon-based substrate, so that the support structure of the mask is in contact with the silicon-based substrate.
[0042] S130, evaporating the evaporation material through the opening of the mask to the side of the silicon-based substrate close to the mask to form an evaporation layer of the silicon-based display panel.
[0043] The method for preparing the evaporated layer in the silicon-based display panel provided in the embodiment of the present invention can use the mask provided in any embodiment of the present invention, and has the corresponding beneficial effects of the mask provided in any embodiment of the present invention. The similarities can be referred to the above description.
[0044] An embodiment of the present invention also provides a silicon-based display panel, which is prepared using the mask provided by any embodiment of the present invention. Therefore, the display panel has the technical features of the mask provided by any embodiment of the present invention and can achieve the beneficial effects of the mask provided by any embodiment of the present invention. The similarities can be referred to the above description.
[0045] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims
1. A mask plate for preparing an evaporation layer of a silicon-based display panel to improve the cleanliness of a silicon substrate, characterized in that: include: At least one opening and a shielding portion surrounding each of the openings; The first surface of the shielding portion is provided with a supporting structure; In a direction parallel to the first surface of the shielding portion, the size of the support structure is smaller than the size of the shielding portion; In a direction perpendicular to the first surface of the shielding portion, a height H of the support structure is in the range of 40 μm < H < 80 μm; When the evaporated deposition layer is evaporated using the mask, the support structure is in contact with the silicon-based substrate of the silicon-based display panel; The support structure includes a plurality of support columns that are dispersedly arranged; When the mask plate includes a plurality of the openings, the plurality of the openings are arranged in an array; and the support pillars are located between two adjacent rows and / or two adjacent columns of the openings.
2. The mask according to claim 1, characterized in that: In the row direction of the openings, the support pillars do not overlap with the openings; and / or in the column direction of the openings, the support pillars do not overlap with the openings.
3. The mask according to claim 1, characterized in that: The contact area S between each support column and the contact surface of the silicon-based substrate is in the range of: 0<S<1mm 2 .
4. The mask according to claim 1, characterized in that: The support structure includes a support ring surrounding all of the opening structures.
5. The mask according to claim 1, characterized in that: The material of the mask plate includes weak magnetic material.
6. A method for preparing an evaporation layer in a silicon-based display panel, characterized in that: include: Providing a silicon-based substrate; Placing the mask according to any one of claims 1 to 5 on one side of the silicon-based substrate; The support structure of the mask is in contact with the silicon-based substrate; The evaporation material is evaporated to a side of the silicon-based substrate close to the mask through the opening of the mask to form an evaporation layer of the silicon-based display panel.
7. A silicon-based display panel, characterized in that: The method is prepared by using the mask described in any one of claims 1 to 5.
Citation Information
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