Die bonding method and die bonding apparatus for light emitting diode
By switching the suction nozzle and the blowing part in the crystal bonding device between the suction and exhaust states, a thrust is applied to make the light-emitting diode firmly adhere to the carrier film, which solves the problem of poor adhesion of the light-emitting diode and improves the stability and efficiency of the crystal bonding.
Patent Information
- Application Number
- CN202211534583.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-29
- Publication Date
- 2025-10-10
- Estimated Expiration
- 2042-11-29
AI Technical Summary
The light-emitting diode has poor adhesion to the carrier film and is easy to fall off.
A die-bonding device is used, including a suction nozzle, a blowing member and a mechanical arm. By controlling the suction nozzle to switch between the suction and exhaust states, a thrust is applied to make the light-emitting diode firmly adhere to the carrier film.
The stability of the light-emitting diode on the carrier film is improved to avoid falling off, thereby improving the reliability and efficiency of the die bonding.
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Figure CN115911223B_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light emitting diode (LED) die bonding method and die bonding device. Background Art
[0002] Light-emitting diodes (LEDs), a highly influential new product in the optoelectronics industry, boast small size, long lifespan, rich colors, and low energy consumption. They are widely used in lighting, display screens, signal lights, backlights, toys, and other fields. Finished LEDs are typically bonded to the die in a sorting machine before storage or use. This process involves arranging and bonding the individual LEDs onto a carrier film.
[0003] In related technologies, a sorting machine usually includes a swing arm and a suction nozzle located on the swing arm. When performing crystal bonding, the light-emitting diode is first adsorbed by the suction nozzle, and then the swing arm is rotated to the position where the carrier film is located, and the swing arm is controlled to be lowered, and the swing arm is controlled to be lowered to the carrier contact height, and the vacuum is stopped, and the light-emitting diode is transferred relying on the viscosity of the carrier film.
[0004] However, after the light emitting diodes are placed on the carrier film, if the adhesion of the carrier film is poor, the light emitting diodes may easily fall off. Summary of the Invention
[0005] The embodiments of the present disclosure provide a method and device for bonding a light-emitting diode, which can stably fix the light-emitting diode on a carrier film and improve the problem of light-emitting diode falling off. The technical solution is as follows:
[0006] An embodiment of the present disclosure provides a die-bonding device for light-emitting diodes, which includes: a suction nozzle, a blowing piece, a robotic arm, and a supporting platform. The suction nozzle is connected to one end of the robotic arm, and the other end of the robotic arm is connected to the supporting platform. The blowing piece is located on the supporting platform and connected to the suction nozzle. The blowing piece is used to draw air or exhaust air so that the suction nozzle operates in an air drawing state or an air exhaust state.
[0007] Optionally, the aperture of the suction nozzle is 0.06 mm to 0.08 mm.
[0008] An embodiment of the present disclosure provides a method for bonding a light-emitting diode. The method is based on the bonding device described above and includes: controlling a suction nozzle to adsorb the light-emitting diode; moving the suction nozzle above a carrier film; controlling the suction nozzle to move downward, and controlling the suction nozzle to switch from the vacuum state to the exhaust state, so that the light-emitting diode falls onto the carrier film.
[0009] In an implementation of the embodiment of the present disclosure, controlling the suction nozzle to switch from the air suction state to the air discharge state includes: controlling the air discharge speed of the suction nozzle to be 5 L / min to 10 L / min.
[0010] In another implementation of the embodiment of the present disclosure, controlling the suction nozzle to move downward includes: controlling the suction nozzle to move downward to a position 100 μm to 300 μm away from the carrier film.
[0011] In another implementation of the embodiment of the present disclosure, controlling the suction nozzle to move downward includes: reducing a downward movement speed of the suction nozzle when controlling the suction nozzle to move downward.
[0012] In another implementation of the embodiment of the present disclosure, controlling the suction nozzle to move downward and controlling the suction nozzle to switch from the vacuum state to the exhaust state so that the light-emitting diode falls onto the carrier film also includes: controlling the suction nozzle to switch to the exhaust state for a first set time period.
[0013] In another implementation of the embodiment of the present disclosure, the first set time length is 50ms to 100ms.
[0014] In another implementation of the embodiment of the present disclosure, before controlling the suction nozzle to switch to the air outlet state for a set time period, the method further includes: controlling the suction nozzle to stop working for a second set time period.
[0015] In another implementation of the embodiment of the present disclosure, the second set time length is 50ms to 60ms.
[0016] An embodiment of the present disclosure provides a light-emitting diode (LED) die-bonding device, which is suitable for executing the light-emitting diode (LED) die-bonding method as described above. The fixing device includes: a suction nozzle, a blowing piece, a robotic arm, and a supporting platform. The suction nozzle is located on the robotic arm, and the blowing piece and the robotic arm are located on the supporting platform. The blowing piece is used to control the suction nozzle to switch to the suction state or the exhaust state, and the robotic arm is used to control the suction nozzle to move on the supporting platform.
[0017] The beneficial effects of the technical solutions provided by the embodiments of the present disclosure include at least:
[0018] The disclosed embodiment provides a die-bonding device for light-emitting diodes, which can enable a suction nozzle to switch from a vacuum state to a gas outlet state. In this way, during the die-bonding process, the suction nozzle switches to the gas outlet state to apply a thrust to the light-emitting diode. Under the action of the thrust, the light-emitting diode is more firmly adhered to the carrier film, thereby improving the problem that the light-emitting diode easily falls off the carrier film. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0020] Figure 1 This is a flow chart of a light emitting diode die bonding method provided by an embodiment of the present disclosure;
[0021] Figure 2 1 is a schematic structural diagram of a light emitting diode die bonding device provided by an embodiment of the present disclosure;
[0022] Figure 3 This is a flow chart of another light emitting diode die bonding method provided in an embodiment of the present disclosure.
[0023] The descriptions of the marks in the figure are as follows:
[0024] 10. Suction nozzle;
[0025] 20. Blowing parts;
[0026] 30. Robotic arm;
[0027] 40. Loading platform;
[0028] 50. Thimble;
[0029] 60. Light-emitting diode;
[0030] 70. Carrier film. DETAILED DESCRIPTION
[0031] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0032] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by a person of ordinary skill in the art to which this disclosure pertains. The terms "first," "second," "third," and similar words used in the patent specification and claims of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish between different components. Similarly, terms such as "a" or "an" do not indicate a quantitative limitation, but rather indicate the presence of at least one. Terms such as "include" or "comprise" mean that the elements or objects preceding "include" or "comprises" encompass the elements or objects listed after "include" or "comprises," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," "right," "top," and "bottom" are used only to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0033] In the related technology, the swing arm rotates to the wafer end, the ejector pin lifts the grain, the welding head suction nozzle opens the vacuum to absorb the grain, the swing arm rotates to the bin end, the welding head vacuum closes and the grain is placed, and the high-strength adhesion of the blue film (carrier) is used to fix the grain on the blue film. PET film (low-viscosity film) is used for carrier. Due to the low viscosity of the PET film, the grain is leaked and side grains cannot be sorted and arranged normally. Technical problem: solve the problem of relying on the adhesion of the carrier film to fix the grain.
[0034] Figure 1 This is a flow chart of a light emitting diode die bonding method provided by an embodiment of the present disclosure. Figure 1 As shown, the die bonding method includes:
[0035] Step 101: Control the suction nozzle to switch to the vacuum state to adsorb the light-emitting diode.
[0036] Step 102: Move the suction nozzle to above the carrier film.
[0037] Step 103: Control the suction nozzle to move downward, and control the suction nozzle to switch from the air extraction state to the air discharge state, so that the light emitting diode falls onto the carrier film.
[0038] The disclosed embodiments provide a method for bonding LEDs. First, a suction nozzle is controlled to switch to a vacuum state to absorb the LED. The nozzle is then moved above a carrier film. Next, the nozzle is controlled to move downward and switch to a degassing state, allowing the LED to drop onto the carrier film. During the bonding process, the nozzle's degassing state applies a thrust to the LED. This thrust allows the LED to adhere more securely to the carrier film, thereby alleviating the problem of the LED easily falling off the carrier film.
[0039] Figure 2 is a structural schematic diagram of a die bonding device of a light emitting diode provided by an embodiment of the present disclosure. As shown in the figure, the fixing device comprises a suction nozzle 10, a blowing member 20, a mechanical arm 30 and a bearing table 40. The suction nozzle 10 is located on the mechanical arm 30, and the blowing member 20 and the mechanical arm 30 are located on the bearing table 40. Figure 2
[0040] The blowing member 20 is used to control the suction nozzle 10 to switch to an air suction state or an air outlet state, and the mechanical arm 30 is used to control the suction nozzle 10 to move on the bearing table 40.
[0041] Exemplarily, the bearing table 40 can be a work platform for placing the mechanical arm 30 and the suction nozzle 10.
[0042] Exemplarily, the suction nozzle 10 can be in a cylindrical shape, one end of the suction nozzle 10 is connected to the blowing member 20 through a pipeline, and the other end of the suction nozzle 10 is used to adsorb the light emitting diode 60.
[0043] The end of the suction nozzle 10 adsorbing the light emitting diode 60 can be provided with a rubber sleeve, so that when the light emitting diode 60 is adsorbed, the rubber sleeve is in contact with the light emitting diode 60 to avoid direct contact between the suction nozzle 10 and the light emitting diode 60 to wear the light emitting diode 60.
[0044] Optionally, the blowing member 20 can be a blower, which can be configured to be in an air suction mode or an air outlet mode.
[0045] Exemplarily, when the blower is in the air suction mode, the blower sucks out the air in the pipeline and the suction nozzle 10 to form a negative pressure in the pipeline and the suction nozzle 10.
[0046] In this way, after the end of the suction nozzle 10 is connected to the light emitting diode 60, the light emitting diode 60 can be adsorbed by air pressure, i.e. the suction nozzle 10 is switched to the air suction state.
[0047] Exemplarily, when the blower is in the air outlet mode, the blower sends air into the pipeline and the suction nozzle 10 to form a positive pressure in the pipeline and the suction nozzle 10.
[0048] In this way, air will be discharged from the end of the suction nozzle 10, and when the end of the suction nozzle 10 adsorbs the light emitting diode 60, the air will exert a pushing force on the light emitting diode 60 to make the light emitting diode 60 more firmly adhere to the bearing film 70, i.e. the suction nozzle 10 is switched to the air outlet state.
[0049] Optionally, the mechanical arm 30 can comprise an arm frame and a driving assembly, the arm frame is connected to the driving assembly, and the driving assembly can drive the arm frame to rotate with the end of the arm frame as the origin.
[0050] Exemplarily, the driving assembly may include a motor, a first gear and a second gear, the output shaft of the motor is coaxially connected to the first gear, the second gear is meshed with the first gear, and the second gear is located at one end of the arm.
[0051] In this way, when the motor rotates, it can drive the first gear and the second gear to rotate, thereby controlling the arm to rotate with the center of the second gear as the origin.
[0052] Optionally, the suction nozzle 10 can be arranged on an arm. When the arm rotates, the suction nozzle 10 can be driven to rotate together, thereby achieving the purpose of adjusting the position of the suction nozzle 10.
[0053] For example, the arm can be provided with a plurality of mounting holes, which can be arranged at intervals along the extension direction of the arm, and the suction nozzle 10 can be fixed in each mounting hole by fasteners such as a pipe clamp and a bolt.
[0054] In this way, multiple suction nozzles 10 can be installed on the arm at the same time to achieve batch die bonding operations of the light emitting diodes 60 .
[0055] At the same time, when performing a die-bonding operation on a single light-emitting diode 60 , the suction nozzle 10 can also be installed on different mounting holes, thereby adjusting the die-bonding position of the light-emitting diode 60 and improving the adaptability of the fixing device.
[0056] Optionally, the fixing device may further include a thimble 50 and a telescopic mechanism, wherein the thimble 50 is connected to the telescopic mechanism, and the telescopic mechanism is used to control the telescopic movement of the thimble 50 .
[0057] In the disclosed embodiment, the ejector pins 50 and the retractable mechanism can be positioned below the LED 60 to be bonded. Before the nozzle 10 needs to attach the LED 60, the retractable mechanism can control the ejector pins 50 to retract and push the LED 60 closer to the nozzle 10, facilitating attachment of the LED 60.
[0058] Illustratively, the telescopic mechanism may include a first telescopic rod, one end of which is connected to the ejector pin 50 , and a telescopic direction of the first telescopic rod is parallel to the axial direction of the ejector pin 50 .
[0059] In this way, when the first telescopic rod is extended, the ejector pin 50 can be controlled to extend to push the light emitting diode 60 ; after the suction nozzle 10 adsorbs the light emitting diode 60 , the first telescopic rod can be retracted to prepare for pushing the next light emitting diode 60 .
[0060] Exemplarily, the telescopic mechanism may further include a second telescopic rod, one end of the second telescopic rod is connected to the first telescopic rod, and the telescopic direction of the second telescopic rod may be perpendicular to the telescopic direction of the first telescopic rod.
[0061] In this way, when the second telescopic rod is extended or retracted, the ejector pin 50 can be controlled to move horizontally, thereby adjusting the position of the ejector pin 50 on the horizontal plane to achieve the purpose of controlling the ejector pin 50 to push different light-emitting diodes 60, thereby improving the adaptability of the die-bonding device.
[0062] Figure 3 This is a flow chart of another light emitting diode die bonding method provided by the embodiment of the present disclosure. Figure 3 As shown, the die bonding method is Figure 2 The schematic implementation of the light emitting diode die bonding device includes:
[0063] Step 201: Control the suction nozzle to switch to the vacuum state to adsorb the light emitting diode.
[0064] The specific steps may include the following:
[0065] First, control the blower to adjust to the suction mode, and use the blower to extract the exhaust air in the pipeline and the suction nozzle, and draw the air in the pipeline and the suction nozzle to negative pressure.
[0066] Then, control the robotic arm to descend and bring the nozzle close to the light-emitting diode.
[0067] The robotic arm may be lowered to a position where the distance between the end of the suction nozzle and the light emitting diode is 100 μm to 300 μm.
[0068] For example, when the distance between the end of the nozzle and the LED is 200 μm, the robot arm is controlled to stop descending. At this time, the negative pressure created by the blower in the nozzle can more easily adsorb the LED.
[0069] In the disclosed embodiment, the end of the nozzle that contacts the LED is provided with a rubber sleeve, which has a certain degree of adhesiveness and can increase the adhesion between the nozzle and the LED. Therefore, the nozzle can be set to a smaller aperture to reduce the vacuum suction force of the nozzle, preventing the LED from falling off the nozzle during the subsequent die bonding process.
[0070] Optionally, the aperture of the suction nozzle is 0.06 mm to 0.08 mm.
[0071] Setting the aperture of the suction nozzle within the above range can reduce the vacuum adsorption force of the suction nozzle, preventing the light-emitting diode from falling off the suction nozzle during the subsequent crystal bonding process; it can also prevent the suction nozzle size from being set too large, thereby increasing the preparation cost of the crystal bonding device.
[0072] Illustratively, the aperture of the nozzle may be 0.07 mm.
[0073] Before step 201, the die bonding method further includes the following steps:
[0074] The first step is to control the ejector pin to push the light emitting diode to be bonded.
[0075] First, the second telescopic rod is controlled to extend and retract in the horizontal direction to adjust the position of the ejector pin so that the ejector pin moves below the light-emitting diode to be die-bonded.
[0076] Then, the first telescopic rod is controlled to extend and retract in the vertical direction to push the ejector pin so that the ejector pin is closer to the suction nozzle.
[0077] The second step is to control the robotic arm to carry the suction nozzle and rotate to the light emitting diode to be bonded.
[0078] First, install the nozzle to the corresponding mounting hole on the arm using a pipe clamp.
[0079] Then, the motor is controlled to drive the arm to rotate, so that the suction nozzle rotates along with the arm to the top of the light emitting diode to be bonded.
[0080] In this way, before adsorbing the light-emitting diode, the ejector pin is controlled to extend and retract to push the light-emitting diode to be solidified, so that the light-emitting diode is closer to the suction nozzle, so that the suction nozzle can adsorb the light-emitting diode.
[0081] Step 202: Move the suction nozzle to above the carrier film.
[0082] Specifically, it may include: controlling the motor to work, driving the arm to rotate, and allowing the suction nozzle to rotate along with the arm to above the carrier film.
[0083] In the embodiment of the present disclosure, the carrier film may be a PET (polyethylene terephthalate) film.
[0084] PET film has excellent physical and mechanical properties, with a long-term operating temperature of up to 120°C and excellent electrical insulation. Even at high temperatures and high frequencies, it exhibits excellent creep resistance, fatigue resistance, friction resistance, and dimensional stability. PET film also exhibits low adhesion, significantly reducing costs compared to using high-strength solid crystal blue film.
[0085] Step 203: Control the suction nozzle to move downward, and control the suction nozzle to switch from the suction state to the exhaust state, so that the light-emitting diode falls onto the carrier film.
[0086] In the embodiment of the present disclosure, when controlling the suction nozzle to move downward, it is necessary to control the suction nozzle to move downward to a position 100 μm to 300 μm away from the carrier film.
[0087] For example, when the suction nozzle is controlled to move downward to a position 100 μm away from the carrier film, the robotic arm is controlled to stop descending.
[0088] The distance to which the suction nozzle is moved downward from the carrier film refers to the distance from the bottom surface of the light emitting diode on the suction nozzle to the carrier film.
[0089] By controlling the distance between the bottom surface of the LED and the carrier film within the above range, it is possible to avoid the LED and the carrier film being too far apart, which would cause the LED to be easily skewed during the falling process and affect the accuracy of the die bonding.
[0090] Among them, when controlling the suction nozzle to move downward, the downward movement speed of the suction nozzle is reduced.
[0091] As the nozzle moves downward, it switches from suction to discharge, applying force to the LED. This slow descent of the nozzle prolongs the duration of its force on the LED, allowing it to adhere more securely to the carrier film.
[0092] Exemplarily, the downward movement speed of the suction nozzle can be reduced to 1% to 15% of the initial speed. For example, the downward movement speed of the suction nozzle is reduced to 5% of the initial speed.
[0093] This can effectively reduce the descent speed of the nozzle, thereby extending the time the nozzle applies thrust to the light-emitting diode.
[0094] Optionally, when the suction nozzle is controlled to switch from the suction state to the discharge state, the discharge speed of the suction nozzle is controlled to be 5 L / min to 10 L / min.
[0095] By controlling the air outlet speed of the suction nozzle within the above range, it is possible to avoid the air outlet speed of the suction nozzle being too high, which may cause the light-emitting diodes that are directly adhered to the carrier film to be blown away, and ensure that the thrust of the suction nozzle stably applies thrust to the light-emitting diodes, allowing the light-emitting diodes to be firmly adhered to the carrier film.
[0096] Exemplarily, the air outlet speed of the nozzle may be 8 L / min.
[0097] Step 204: Control the nozzle to stop working for a second set time period.
[0098] Optionally, the second set time length is 50 ms to 60 ms. For example, the second set time length may be 55 ms.
[0099] Step 205: Control the nozzle to switch to the air outlet state for a first set time period.
[0100] Optionally, the first set time length is 50ms to 100ms. For example, the first set time length may be 80ms.
[0101] In this way, after the suction nozzle places the light-emitting diode on the PET film and the light-emitting diode is solidified, the suction nozzle is opened after the second set time to increase the time for the nozzle to apply thrust to the light-emitting diode, which can further ensure the solidification stability of the light-emitting diode.
[0102] The disclosed embodiments provide a method for bonding LEDs. First, a suction nozzle is controlled to switch to a vacuum state to absorb the LED. The nozzle is then moved above a carrier film. Next, the nozzle is controlled to move downward and switch to a degassing state, allowing the LED to drop onto the carrier film. During the bonding process, the nozzle's degassing state applies a thrust to the LED. This thrust allows the LED to adhere more securely to the carrier film, thereby alleviating the problem of the LED easily falling off the carrier film.
[0103] The die-bonded light-emitting diode in the embodiment of the present disclosure may include a substrate, an n-type layer, an epitaxial layer, and a p-type layer stacked in sequence.
[0104] Optionally, the substrate is a sapphire substrate. Sapphire substrates have a relatively high light transmittance, meaning they are transparent. Furthermore, sapphire is a relatively hard material with relatively stable chemical properties, which enables the light-emitting diode to have good luminous effect and stability.
[0105] The epitaxial layer may include a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer sequentially stacked on a substrate, wherein one of the first semiconductor layer and the second semiconductor layer is a p-type layer and the other of the first semiconductor layer and the second semiconductor layer is an n-type layer.
[0106] As an example, the first semiconductor layer is a p-type layer, and the second semiconductor layer is an n-type layer.
[0107] Optionally, the first semiconductor layer is an n-type AlGaInP layer, and the thickness of the n-type AlGaInP layer may be 0.5 μm to 3 μm.
[0108] Optionally, the multi-quantum well layer includes alternately grown AlGaInP quantum well layers and AlGaInP quantum barrier layers, wherein the Al content in the AlGaInP quantum well layers and the AlGaInP quantum barrier layers is different. The multi-quantum well layer may include 3 to 8 periods of alternately stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers.
[0109] As an example, in the embodiment of the present disclosure, the multi-quantum well layer includes five periods of alternately stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers.
[0110] Optionally, the thickness of the multi-quantum well layer may be 150 nm to 200 nm.
[0111] Optionally, the second semiconductor layer is an indium-doped p-type AlInP layer, and the thickness of the p-type AlInP layer may be 0.5 μm to 3 μm.
[0112] Optionally, the light emitting diode further comprises a first electrode, a second electrode and a passivation layer, a surface of the second semiconductor layer has a recess exposing the first semiconductor layer, the first electrode is located in the recess, the second electrode is located on a surface of the second semiconductor layer away from the substrate, and the passivation layer is located on at least the surface of the second semiconductor layer, a bottom surface of the recess, a surface of the first electrode and a surface of the second electrode.
[0113] Optionally, the first electrode is a p-type electrode, and the second electrode is an n-type electrode.
[0114] Optionally, the passivation layer is a distributed Bragg reflection (DBR) layer, the DBR layer comprises a plurality of periodically alternating SiO2 layers and TiO2 layers.
[0115] Optionally, a thickness of the SiO2 layer in the DBR layer is 800 angstroms to 1200 angstroms, and a thickness of the TiO2 layer is 500 angstroms to 900 angstroms.
[0116] The DBR layer has a passivation effect and is used to reflect light from the multi-quantum well layer to the substrate, thereby improving light emission.
[0117] Optionally, the light emitting diode further comprises a first solder block and a second solder block, the first solder block and the second solder block are located on the passivation layer, the first solder block is connected to the first electrode through a through hole, and the second solder block is connected to the second electrode through another through hole.
[0118] Optionally, the first solder block and the second solder block are rectangular blocks, and the area is increased to facilitate conduction. The first solder block and the second solder block are distributed at intervals on the surface of the passivation layer.
[0119] Optionally, a protective layer is further provided on the surface of the passivation layer and the improvement layer, the protective layer extends from the surface of the passivation layer and the surface of the improvement layer to the substrate, and the protective layer has a through hole exposing the first solder block and the second solder block to facilitate electrical connection.
[0120] Optionally, the protective layer is a silicon oxide layer, and a thickness of the silicon oxide layer is 2000 angstroms.
[0121] The above does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not intended to limit the present disclosure. Any technician familiar with the profession can make slight changes or modifications to equivalent embodiments with equivalent changes using the technical content disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure are still within the scope of the technical solution of the present disclosure.
Claims
1. A light emitting diode die bonding method, characterized in that: The die bonding method is implemented based on a die bonding device, which includes: a suction nozzle, a blasting member, a robotic arm, and a carrying platform. The suction nozzle is connected to one end of the robotic arm, and the other end of the robotic arm is connected to the carrying platform. The blasting member is located on the carrying platform and connected to the suction nozzle. The blasting member is used to extract or exhaust air so that the suction nozzle works in an exhaust state or an exhaust state. The die bonding method includes: Control the nozzle to switch to the vacuum state to adsorb the light-emitting diode; Moving the suction nozzle to above the carrier film; The suction nozzle is controlled to move downward to a position 100 μm to 300 μm away from the carrier film, and the suction nozzle is controlled to switch from the vacuum state to the exhaust state, and the exhaust speed of the suction nozzle is controlled to be 5 L / min to 10 L / min, so that the light-emitting diode falls to the carrier film, and the suction nozzle is moved downward to a distance from the carrier film that is the distance from the bottom surface of the light-emitting diode on the suction nozzle to the carrier film, wherein, when the suction nozzle is controlled to move downward, the downward speed of the suction nozzle is reduced, and the downward speed of the suction nozzle is reduced to 1% to 15% of the initial speed.
2. The die bonding method according to claim 1, wherein: The method further comprises: controlling the suction nozzle to move downward and controlling the suction nozzle to switch from the air extraction state to the air discharge state so that the light emitting diode falls onto the carrier film; The suction nozzle is controlled to switch to the air outlet state for a first set time period.
3. The die bonding method according to claim 2, wherein: The first set time length is 50ms to 100ms.
4. The die bonding method according to claim 2, wherein: Before controlling the nozzle to switch to the air outlet state for a set period of time, the method further includes: The suction nozzle is controlled to stop working for a second set time period.
5. The die bonding method according to claim 4, wherein: The second set time length is 50ms to 60ms.
6. The die bonding method according to claim 1, wherein: The aperture of the suction nozzle is 0.06 mm to 0.08 mm.
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