Methods, devices, equipment and media for adjusting grinding time in chemical mechanical polishing equipment

Abstract

This invention provides a method, apparatus, equipment, and medium for adjusting the grinding time of a chemical mechanical polishing (CMP) device. The method involves obtaining the target grinding thickness of the current wafer to be ground; starting the timer after grinding the wafer using the target CMP device; monitoring the grinding pressure during the grinding process; and calculating the current total grinding thickness based on a first relationship between the removal rate and the grinding pressure, along with the monitored grinding pressure. When the current total grinding thickness reaches the target grinding thickness, grinding and timing are terminated, yielding the current grinding time. The method then calculates the actual removal rate and the theoretical removal rate, and updates the first relationship using the difference between the two rates. This updated first relationship is then used to adjust the grinding time for the next wafer to be ground. This achieves dynamic adjustment of the grinding time during batch wafer grinding, improving the accuracy of wafer grinding and further enhancing the quality of the ground wafer products.

Description

Technical Field

[0001] This invention relates to the field of chemical mechanical planarization equipment technology, specifically to a method, apparatus, equipment, and medium for adjusting the grinding time of chemical mechanical polishing equipment. Background Technology

[0002] With the rapid advancement of integrated circuit manufacturing technology, IC chips are constantly evolving towards miniaturization and multi-layered interconnection. Chemical Mechanical Polishing (CMP) has become a core technology in integrated circuit manufacturing. CMP equipment is mainly used in the CMP process to achieve wafer surface planarization. The grinding time control of the CMP equipment grinding head has a very important impact on the wafer grinding results.

[0003] Existing chemical mechanical polishing (CMP) equipment typically uses pre-set polishing times to perform planarization processes. This means that the same process parameters are used regardless of the equipment's condition or the wafer's state. Therefore, it cannot effectively adapt to the varying wafer conditions and equipment states that affect wafer planarization, resulting in wafers failing to achieve the target thickness value and exhibiting low polishing accuracy. Thus, how to precisely and dynamically adjust and control the polishing time to improve wafer polishing accuracy has become a pressing issue in the planarization process. Summary of the Invention

[0004] In view of this, embodiments of the present invention provide a method, apparatus, equipment and medium for adjusting the grinding time of a chemical mechanical polishing (CMP) device, in order to overcome the problem that existing CMP devices only require a planarization process when using a fixed grinding time, resulting in low grinding accuracy.

[0005] According to a first aspect, embodiments of the present invention provide a method for adjusting the grinding time of a chemical mechanical polishing (CMP) device, comprising:

[0006] Obtain the target grinding thickness of the current wafer to be ground, where the target grinding thickness is the thickness that needs to be removed by grinding the current wafer to be ground;

[0007] After the target chemical mechanical polishing equipment grinds the wafer to be ground, the timing begins. The grinding pressure during the grinding process is monitored, and the total thickness that has been ground is calculated based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure.

[0008] When the total current grinding thickness reaches the target grinding thickness, grinding and timing are terminated, and the current grinding time is obtained.

[0009] Measure the actual grinding thickness of the wafer to be ground, and calculate the actual removal rate based on the actual grinding thickness and the current grinding time;

[0010] The theoretical removal rate is calculated based on the monitored grinding pressure and the current grinding time;

[0011] Based on the difference between the theoretical removal rate and the actual removal rate, the first relationship is updated so as to adjust the grinding time of the next wafer to be ground using the updated first relationship.

[0012] Optionally, before formal grinding using the target chemical mechanical polishing equipment, the method further includes:

[0013] The target chemical mechanical polishing equipment was used to perform trial polishing on the wafer to be polished. The trial polishing pressure during the trial polishing process was monitored to obtain the trial polishing time and the actual polishing amount.

[0014] The actual grinding removal rate is calculated based on the grinding duration and the actual grinding amount.

[0015] The theoretical removal rate of the trial grinding is calculated based on the monitored trial grinding pressure and the first relationship;

[0016] The first relationship is updated based on the difference between the actual trial grinding removal rate and the theoretical trial grinding removal rate.

[0017] Optionally, updating the first relationship based on the difference between the theoretical removal rate and the actual removal rate includes:

[0018] Obtain the current usage time of consumables in the target chemical mechanical polishing equipment;

[0019] The difference is attenuated based on the current usage duration;

[0020] The first relationship is updated using the decayed difference.

[0021] Optionally, after terminating the grinding process, the method further includes:

[0022] Measure the first thickness of the wafer to be ground after grinding;

[0023] Based on the relationship between the first thickness and the target thickness corresponding to the current wafer to be ground, the grinding time of the next wafer to be ground is adjusted.

[0024] Optionally, adjusting the grinding time of the next wafer based on the relationship between the first thickness and the target thickness corresponding to the current wafer to be ground includes:

[0025] When the first thickness is greater than the target thickness, when the total current polished thickness of the next wafer to be polished reaches the target polishing thickness, the first polishing time is extended based on the difference between the first thickness and the target thickness before polishing and timing are terminated.

[0026] When the first thickness is equal to the target thickness, grinding and timing are terminated when the total current grinding thickness of the next wafer to be ground reaches the target grinding thickness.

[0027] When the first thickness is less than the target thickness, the target grinding thickness of the next wafer to be ground is adjusted based on the difference between the first thickness and the target thickness. When the total current grinding thickness of the next wafer to be ground reaches the adjusted target grinding thickness, grinding and timing are terminated. The adjusted target grinding thickness is less than the original target grinding thickness.

[0028] Optionally, the first relationship between the removal rate and the grinding pressure is obtained as follows:

[0029] The wafer samples were ground under different grinding pressures to obtain the first removal rate of the wafer samples under different grinding pressures;

[0030] Based on the first removal rate corresponding to the wafer samples under different polishing pressures, the first relationship between the removal rate and the polishing pressure is determined.

[0031] Optionally, determining the first relationship between the removal rate and the polishing pressure based on the first removal rate corresponding to the wafer sample under different polishing pressures includes:

[0032] Curve fitting was performed on the first removal rate of the wafer samples under different grinding pressures to obtain the first relationship between the removal rate and the grinding pressure.

[0033] According to a second aspect, embodiments of the present invention provide a grinding time adjustment device for a chemical mechanical polishing apparatus, comprising:

[0034] The acquisition module is used to acquire the target grinding thickness of the current wafer to be ground, wherein the target grinding thickness is the thickness that needs to be removed by grinding the current wafer to be ground;

[0035] The first processing module is used to start timing after grinding the wafer to be ground using the target chemical mechanical polishing equipment, monitor the grinding pressure during the grinding process, and calculate the total thickness that has been ground based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure.

[0036] The second processing module is used to terminate grinding and timing when the total current grinding thickness reaches the target grinding thickness, and obtain the current grinding time.

[0037] The third processing module is used to measure the actual grinding thickness of the wafer to be ground, and to calculate the actual removal rate based on the actual grinding thickness and the current grinding time.

[0038] The fourth processing module is used to calculate the theoretical removal rate based on the monitored grinding pressure and the current grinding time;

[0039] The fifth processing module is used to update the first relationship based on the difference between the theoretical removal rate and the actual removal rate, so as to adjust the grinding time of the next wafer to be ground using the updated first relationship.

[0040] According to a third aspect, embodiments of the present invention provide a computer-readable storage medium that stores computer instructions, which, when executed by a processor, implement the method described in the first aspect of the present invention and any of its alternative embodiments.

[0041] According to a fourth aspect, an embodiment of the present invention provides a grinding time adjustment device for a chemical mechanical polishing apparatus, comprising: a memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the computer instructions to perform the method described in the first aspect of the present invention and any of its optional embodiments.

[0042] The technical solution of this invention has the following advantages:

[0043] The chemical mechanical polishing (CMP) equipment grinding time adjustment method provided in this invention involves: obtaining the target grinding thickness of the current wafer to be ground, where the target grinding thickness is the thickness that needs to be removed from the current wafer; starting the timer after grinding the current wafer using the target CMP equipment, monitoring the grinding pressure during the grinding process, and calculating the current total grinding thickness based on a first relationship between the removal rate and the grinding pressure and the monitored grinding pressure; stopping the grinding and timing when the current total grinding thickness reaches the target grinding thickness, thus obtaining the current grinding time; measuring the actual grinding thickness of the current wafer to be ground, and calculating the actual removal rate based on the actual grinding thickness and the current grinding time; calculating the theoretical removal rate based on the monitored grinding pressure and the current grinding time; updating the first relationship based on the difference between the theoretical removal rate and the actual removal rate, and using the updated first relationship to adjust the grinding time of the next wafer to be ground. By obtaining the primary relationship between removal rate and grinding pressure in advance, and calculating the total grinding thickness in real time based on the grinding pressure during the actual grinding process, the wafer grinding time can be dynamically controlled. Furthermore, by using the relationship between the actual removal rate after the current wafer grinding and the theoretical removal rate obtained based on the monitored grinding pressure, the primary relationship for the next wafer to be ground can be updated, thereby adjusting the grinding time of the next wafer to be ground. This achieves both fine adjustment of grinding time in the grinding process of a single wafer and dynamic adjustment of grinding time in the batch grinding process of wafers, improving the accuracy of wafer grinding and further enhancing the quality of wafer grinding products. Attached Figure Description

[0044] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0045] Figure 1 This is a flowchart of the method for adjusting the grinding time of a chemical mechanical polishing device in an embodiment of the present invention;

[0046] Figure 2 This is a schematic diagram of the grinding time adjustment device of the chemical mechanical polishing equipment in an embodiment of the present invention;

[0047] Figure 3 This is a schematic diagram of the grinding time adjustment device in the chemical mechanical polishing equipment according to an embodiment of the present invention. Detailed Implementation

[0048] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0050] Existing chemical mechanical polishing (CMP) equipment typically uses pre-set polishing times to perform planarization processes. This means that the same process parameters are used regardless of the equipment's condition or the wafer's state. Therefore, it cannot effectively adapt to the varying wafer conditions and equipment states that affect wafer planarization, resulting in wafers failing to achieve the target thickness value and exhibiting low polishing accuracy. Thus, how to precisely and dynamically adjust and control the polishing time to improve wafer polishing accuracy has become a pressing issue in the planarization process.

[0051] To address the above problems, embodiments of the present invention provide a method for adjusting the grinding time of a chemical mechanical polishing (CMP) device, such as... Figure 1 As shown, the method for adjusting the grinding time of this chemical mechanical polishing equipment specifically includes the following steps:

[0052] Step S101: Obtain the target grinding thickness of the current wafer to be ground.

[0053] The target grinding thickness is the thickness that needs to be removed from the wafer to be ground. Specifically, this can be achieved by measuring the current wafer thickness (ThicknessPre) and obtaining the target thickness (PostTarget) based on the input. Thickness = ThicknessPre-PostTarget, thus obtaining the target grinding thickness of the wafer to be ground.

[0054] Step S102: After grinding the wafer to be ground using the target chemical mechanical polishing equipment, start timing, monitor the grinding pressure during the grinding process, and calculate the total thickness that has been ground based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure.

[0055] Specifically, in one embodiment, the first relationship between the removal rate and the grinding pressure is obtained as follows:

[0056] Wafer samples were ground under different grinding pressures to obtain the first removal rate of the wafer samples under different grinding pressures; based on the first removal rate of the wafer samples under different grinding pressures, the first relationship between the removal rate and the grinding pressure was determined.

[0057] Furthermore, by performing curve fitting on the first removal rate corresponding to the wafer samples under different polishing pressures, the first relationship between the removal rate and the polishing pressure is obtained.

[0058] For example, the first relationship described above can be obtained by selecting n sample wafers and performing the following steps to obtain the relationship expression corresponding to the first relationship between the removal rate and the grinding pressure.

[0059] (1) Specify the grinding (also known as polishing) time, and set the same grinding parameters for all wafers;

[0060] (2) Specify the zone for observing pressure changes;

[0061] (3) Different grinding pressures are set for different wafers in a fixed zone. ;

[0062] (4) Measure the thickness of each wafer before it enters the machine. ;

[0063] (5) Perform the polishing process according to the set pressure;

[0064] (6) Measure the thickness of each wafer after polishing.

[0065] (5) Calculate the removal rate per wafer. ;

[0066] (6) Use the least squares method to and Curve fitting was performed to obtain the "removal rate-pressure" relationship. ,in This is a function related to pressure.

[0067] Specifically, during the polishing process of the wafer to be polished, the change in polishing pressure can be monitored by obtaining the actual polishing pressure fed back by the machine at time intervals t. , where i is the current pressure sampling number. Based on the "removal rate - pressure" relationship formula in step (6) above, the theoretical removal rate at different times is obtained. Then, based on the formula, the total thickness already ground... Obtain the current total thickness of the wafer that has been ground, where i is the current pressure sampling number.

[0068] Step S103: When the total thickness of the current grinding reaches the target grinding thickness, stop grinding and timing to obtain the current grinding time.

[0069] Specifically, during the polishing process, the total thickness already polished needs to be calculated in real time each time the pressure is sampled, and at the same time... and Compare, if Less than If so, the grinding process continues. equal to or greater than If the grinding process is terminated, a grinding termination signal is sent to stop the grinding process, and the current grinding duration corresponding to this grinding is obtained.

[0070] Step S104: Measure the actual grinding thickness of the wafer to be ground, and calculate the actual removal rate based on the actual grinding thickness and the current grinding time.

[0071] Specifically, after polishing, the wafer thickness is measured. Since the wafer thickness before polishing (ThicknessPre), the wafer thickness after polishing (ThicknessPost), and the polishing time (Time) are known at the end of the polishing process, the actual wafer removal rate can be calculated. .

[0072] Step S105: Calculate the theoretical removal rate based on the monitored grinding pressure and current grinding time.

[0073] Specifically, the average wafer grinding pressure is calculated based on the grinding pressure monitored in step S102 above. Where i represents each pressure sample and m represents the total number of samples. Based on this average pressure and the expression for the first relationship mentioned above, the theoretical wafer removal rate can be calculated. .

[0074] Step S106: Based on the difference between the theoretical removal rate and the actual removal rate, update the first relationship so as to adjust the grinding time of the next wafer to be ground using the updated first relationship.

[0075] Specifically, the required feedback value can be obtained based on the difference between the actual removal rate and the theoretical removal rate. Therefore, when calculating the removal rate of the next wafer, the following method is used. By adjusting the removal rate calculation error, the accuracy of grinding time adjustment can be improved, thereby ensuring that the next wafer achieves a good grinding effect.

[0076] Furthermore, in one embodiment, step S106 specifically involves obtaining the current usage time of consumables in the target chemical mechanical polishing equipment; attenuating the difference based on the current usage time; and updating the first relationship using the attenuated difference.

[0077] Specifically, since the removal rate decreases with the usage time of consumables in chemical mechanical polishing equipment, therefore, the above... The impact on subsequent wafers decreases gradually. In practical applications, if subsequent values ​​are measured for each wafer, the latest feedback value is used. If only individual wafers have measured the values, then it is necessary to... Attenuation can be achieved using the following formula. Attenuation:

[0078]

[0079]

[0080] in, The "Removal Rate-Pressure" formula is a function that monotonically decreases with lifetime, where lifetime is the current usage time of consumables in the target chemical mechanical polishing (CMP) equipment. By incorporating the influence of the current usage time of consumables in the target CMP equipment, the formula is updated and adjusted to ensure that the updated formula better reflects the actual usage of the equipment, thereby improving the accuracy of grinding time control and enhancing wafer grinding precision.

[0081] Specifically, in one embodiment, before formal grinding using the target chemical mechanical polishing equipment, the grinding time adjustment method for the chemical mechanical polishing equipment provided in this embodiment of the invention further includes the following steps:

[0082] Step S201: Use the target chemical mechanical polishing equipment to perform trial polishing on the wafer to be polished, monitor the trial polishing pressure during the trial polishing process, and obtain the trial polishing time and the actual polishing amount.

[0083] Step S202: Calculate the actual removal rate of the trial grinding based on the trial grinding time and the actual grinding amount of the trial grinding.

[0084] Step S203: Calculate the theoretical removal rate of the trial grinding based on the monitored trial grinding pressure and the first relationship.

[0085] Step S204: Update the first relationship based on the difference between the actual trial grinding removal rate and the theoretical trial grinding removal rate.

[0086] Specifically, before the formal grinding, the grinding time of the wafer is affected by the different states of the chemical mechanical polishing equipment. In order to obtain a more accurate "removal rate-pressure" formula that conforms to the current state of the target chemical mechanical polishing equipment, it is necessary to make corrections by conducting trial grinding on the target chemical mechanical polishing equipment. This ensures the accuracy of the first relationship used in the formal grinding process, and further ensures the accuracy of the grinding time adjustment during the formal grinding process, thereby improving the grinding accuracy.

[0087] For example, each grinding head of the target chemical mechanical polishing equipment can be test-ground once by following the steps below.

[0088] (1) Set the same grinding parameters, where the grinding pressure and grinding time should be as similar as possible to those used in the actual grinding process;

[0089] (2) Measure the wafer thickness before polishing.

[0090] (3) During the polishing process, the grinding pressure is sampled at intervals t. After polishing is completed, the average wafer pressure is calculated. , where i represents each pressure sample and m represents the total number of samples.

[0091] (4) After wafer polishing is completed, measure the wafer thicknessPost value according to the formula. The actual removal rate RR_Actual was calculated.

[0092] (5) Calculate the theoretical removal rate of the wafer based on the above "removal rate-pressure" relationship formula. By comparing the two, and based on the difference between the actual removal rate and the theoretical removal rate, we can obtain... Use the updated formula The error is calculated by adjusting the removal rate. The updated formula is then applied to step S102 for formal grinding. This ensures that the first relationship matches the operating state of the target chemical mechanical polishing equipment, which helps improve the accuracy of wafer grinding time adjustment, thereby enhancing the precision of wafer grinding and improving the quality of the ground wafer.

[0093] Specifically, in one embodiment, after terminating the grinding process, the chemical mechanical polishing equipment grinding time adjustment method provided in this embodiment of the invention further includes the following steps:

[0094] Step S301: Measure the first thickness of the wafer to be ground after grinding.

[0095] Step S302: Based on the relationship between the first thickness and the target thickness corresponding to the current wafer to be ground, adjust the grinding time of the next wafer to be ground.

[0096] In practical applications, after the polishing process is completed, the wafer thickness is measured. If the thickness is thinner than PostTarget, the grinding time for the next wafer is reduced; if it is thicker, the grinding time for the next wafer is increased; if they are exactly equal, the grinding control is performed based on the same grinding time adjustment logic. This further improves the real-time adjustment capability of grinding time for batch grinding of wafers and further enhances the accuracy of wafer grinding.

[0097] Specifically, when the first thickness is greater than the target thickness, and the total thickness of the current polished wafer reaches the target polishing thickness, the first polishing time is extended based on the difference between the first thickness and the target thickness before polishing and timing are terminated. After actual polishing, if the polished wafer thickness is found to be greater than the target thickness, it indicates insufficient polishing. Therefore, it is necessary to increase the polishing amount by increasing the polishing time. The larger the deviation, the longer the additional polishing time is required. The specific relationship between the polishing deviation and the extended polishing time can be obtained experimentally, but this invention is not limited thereto.

[0098] Furthermore, when the first thickness equals the target thickness, grinding and timing are terminated when the total current grinding thickness of the next wafer to be ground reaches the target grinding thickness. After the actual polishing is completed, if it is found that the thickness of the wafer grinding is the same as the target thickness, it indicates that the grinding time of the current wafer is controlled very precisely. Therefore, the same grinding time control process can be used for the next wafer to achieve a similar grinding effect.

[0099] Furthermore, when the first thickness is less than the target thickness, the target grinding thickness of the next wafer to be ground is adjusted based on the difference between the first thickness and the target thickness. When the total current grinding thickness of the next wafer to be ground reaches the adjusted target grinding thickness, grinding and timing are terminated. The adjusted target grinding thickness is less than the original target grinding thickness. After actual polishing, if it is found that the thickness of the wafer grinding is less than the target thickness, it indicates that the grinding amount is too large. Applying the same grinding time adjustment method to the next wafer may also result in the next wafer having an excessive grinding amount. Therefore, the grinding amount can be reduced by decreasing the target grinding thickness, thereby shortening the grinding time. The larger the deviation, the larger the target grinding thickness needs to be reduced. The specific relationship between the grinding deviation and the reduction of the target grinding thickness can be obtained through experiments, and this invention is not limited thereto.

[0100] This allows for dynamic adjustment of the grinding time based on the wafer type, the difference in wafer thickness removal, and the real-time status of the chemical mechanical polishing equipment, in order to achieve the target wafer thickness. The grinding quality of the wafer is ensured through flexible adjustment and precise control of the grinding time.

[0101] By performing the above steps, the chemical mechanical polishing equipment grinding time adjustment method provided in this embodiment of the invention obtains the first relationship between removal rate and grinding pressure in advance, calculates the current total grinding thickness in real time based on the grinding pressure during the actual grinding process, and then dynamically controls the wafer grinding time. Furthermore, by using the relationship between the actual removal rate after the current wafer grinding and the theoretical removal rate obtained based on the monitored grinding pressure, the first relationship for the next wafer to be ground is updated, thereby adjusting the grinding time of the next wafer to be ground. This achieves both fine adjustment of the grinding time in the grinding process of a single wafer and dynamic adjustment of the grinding time in the batch grinding process of wafers, improving the accuracy of wafer grinding and further enhancing the quality of wafer grinding products.

[0102] This invention also provides a grinding time adjustment device for chemical mechanical polishing equipment, such as... Figure 2 As shown, the grinding time adjustment device of the chemical mechanical polishing equipment includes:

[0103] The acquisition module 101 is used to acquire the target grinding thickness of the wafer to be ground, which is the thickness that needs to be removed from the wafer to be ground. For details, please refer to the relevant description of step S101 in the above method embodiment, which will not be repeated here.

[0104] The first processing module 102 is used to start timing after grinding the wafer to be ground using the target chemical mechanical polishing equipment, monitor the grinding pressure during the grinding process, and calculate the total thickness that has been ground based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure. For details, please refer to the relevant description of step S102 in the above method embodiment, which will not be repeated here.

[0105] The second processing module 103 is used to terminate grinding and timing when the total current grinding thickness reaches the target grinding thickness, and to obtain the current grinding time. For details, please refer to the relevant description of step S103 in the above method embodiment, which will not be repeated here.

[0106] The third processing module 104 is used to measure the actual grinding thickness of the wafer to be ground, and calculate the actual removal rate based on the actual grinding thickness and the current grinding time. For details, please refer to the relevant description of step S104 in the above method embodiments, which will not be repeated here.

[0107] The fourth processing module 105 is used to calculate the theoretical removal rate based on the monitored grinding pressure and the current grinding time. For details, please refer to the relevant description of step S105 in the above method embodiments, which will not be repeated here.

[0108] The fifth processing module 106 is used to update the first relationship based on the difference between the theoretical removal rate and the actual removal rate, so as to adjust the grinding time of the next wafer to be ground using the updated first relationship. For details, please refer to the relevant description of step S106 in the above method embodiment, which will not be repeated here.

[0109] Further functional descriptions of the above modules are the same as those of the corresponding method embodiments described above, and will not be repeated here.

[0110] Through the synergistic cooperation of the aforementioned components, the chemical mechanical polishing equipment grinding time adjustment device provided in this embodiment of the invention obtains a first relationship between removal rate and grinding pressure in advance, calculates the current total grinding thickness in real time based on the grinding pressure during the actual grinding process, and then dynamically controls the wafer grinding time. Furthermore, by using the relationship between the actual removal rate after the current wafer grinding and the theoretical removal rate obtained based on the monitored grinding pressure, the first relationship for the next wafer to be ground is updated, thereby adjusting the grinding time of the next wafer to be ground. This achieves both fine adjustment of the grinding time during the grinding of a single wafer and dynamic adjustment of the grinding time during the batch grinding of wafers, improving the accuracy of wafer grinding and further enhancing the quality of wafer grinding products.

[0111] This invention also provides a grinding time adjustment device for chemical mechanical polishing equipment, such as... Figure 3As shown, the grinding time adjustment device of the chemical mechanical polishing equipment may include a processor 901 and a memory 902, wherein the processor 901 and the memory 902 can be connected via a bus or other means. Figure 3 Taking the example of a connection between China and Israel via a bus.

[0112] Processor 901 can be a central processing unit (CPU). Processor 901 can also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or combinations of the above types of chips.

[0113] The memory 902, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs, non-transitory computer-executable programs, and modules, such as the program instructions / modules corresponding to the method in this embodiment of the invention. The processor 901 executes various functional applications and data processing of the processor by running the non-transitory software programs, instructions, and modules stored in the memory 902, thereby implementing the above-described method.

[0114] The memory 902 may include a program storage area and a data storage area. The program storage area may store application programs required for operating the device and at least one function; the data storage area may store data created by the processor 901, etc. Furthermore, the memory 902 may include high-speed random access memory and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, the memory 902 may optionally include memory remotely located relative to the processor 901, and these remote memories may be connected to the processor 901 via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0115] One or more modules are stored in memory 902 and, when executed by processor 901, perform the above method.

[0116] The specific details of the grinding time adjustment equipment of the above chemical mechanical polishing equipment can be understood by referring to the relevant descriptions and effects in the above method embodiments, and will not be repeated here.

[0117] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The implemented program can be stored in a computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the methods described above. The storage medium can be a magnetic disk, optical disk, read-only memory (ROM), random access memory (RAM), flash memory, hard disk drive (HDD), or solid-state drive (SSD), etc.; the storage medium can also include combinations of the above types of memory.

[0118] The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of the claims of the present invention.

Claims

1. A method for adjusting the grinding time in a chemical mechanical polishing (CMP) device, characterized in that, include: Obtain the target grinding thickness of the current wafer to be ground, where the target grinding thickness is the thickness that needs to be removed by grinding the current wafer to be ground; After the target chemical mechanical polishing equipment grinds the wafer to be ground, the timing begins. The grinding pressure during the grinding process is monitored, and the total thickness that has been ground is calculated based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure. When the total current grinding thickness reaches the target grinding thickness, grinding and timing are terminated, and the current grinding time is obtained. Measure the actual grinding thickness of the wafer to be ground, and calculate the actual removal rate based on the actual grinding thickness and the current grinding time; The theoretical removal rate is calculated based on the monitored grinding pressure and the current grinding time. Based on the difference between the theoretical removal rate and the actual removal rate, the first relationship is updated so as to adjust the grinding time of the next wafer to be ground using the updated first relationship; The step of updating the first relationship based on the difference between the theoretical removal rate and the actual removal rate includes: Obtain the current usage time of consumables in the target chemical mechanical polishing equipment; The difference is attenuated based on the current usage duration; The first relationship is updated using the decayed difference.

2. The method according to claim 1, characterized in that, Before formal grinding using the target chemical mechanical polishing equipment, the method further includes: The target chemical mechanical polishing equipment was used to perform trial polishing on the wafer to be polished. The trial polishing pressure during the trial polishing process was monitored to obtain the trial polishing time and the actual polishing amount. The actual grinding removal rate is calculated based on the grinding duration and the actual grinding amount. The theoretical removal rate of the trial grinding is calculated based on the monitored trial grinding pressure and the first relationship; The first relationship is updated based on the difference between the actual trial grinding removal rate and the theoretical trial grinding removal rate.

3. The method according to claim 1, characterized in that, After terminating the grinding process, the method further includes: Measure the first thickness of the wafer to be ground after grinding; Based on the relationship between the first thickness and the target thickness corresponding to the current wafer to be ground, the grinding time of the next wafer to be ground is adjusted.

4. The method according to claim 3, characterized in that, The step of adjusting the grinding time of the next wafer based on the relationship between the first thickness and the target thickness corresponding to the current wafer to be ground includes: When the first thickness is greater than the target thickness, when the total current polished thickness of the next wafer to be polished reaches the target polishing thickness, the first polishing time is extended based on the difference between the first thickness and the target thickness before polishing and timing are terminated. When the first thickness is equal to the target thickness, grinding and timing are terminated when the total current grinding thickness of the next wafer to be ground reaches the target grinding thickness. When the first thickness is less than the target thickness, the target grinding thickness of the next wafer to be ground is adjusted based on the difference between the first thickness and the target thickness. When the total current grinding thickness of the next wafer to be ground reaches the adjusted target grinding thickness, grinding and timing are terminated. The adjusted target grinding thickness is less than the original target grinding thickness.

5. The method according to claim 1, characterized in that, The first relationship between the removal rate and the grinding pressure is obtained as follows: Wafer samples were ground under different grinding pressures to obtain the first removal rate of the wafer samples under different grinding pressures; Based on the first removal rate of the wafer samples under different polishing pressures, the first relationship between the removal rate and the polishing pressure is determined.

6. The method according to claim 5, characterized in that, The determination of the first relationship between the removal rate and the polishing pressure based on the first removal rate corresponding to the wafer sample under different polishing pressures includes: Curve fitting was performed on the first removal rate of the wafer samples under different grinding pressures to obtain the first relationship between the removal rate and the grinding pressure.

7. A grinding time adjustment device for a chemical mechanical polishing (CMP) device, applicable to the grinding time adjustment method for the CMP device as described in claim 1, characterized in that, include: The acquisition module is used to acquire the target grinding thickness of the current wafer to be ground, wherein the target grinding thickness is the thickness that needs to be removed by grinding the current wafer to be ground; The first processing module is used to start timing after grinding the wafer to be ground using the target chemical mechanical polishing equipment, monitor the grinding pressure during the grinding process, and calculate the total thickness that has been ground based on the first relationship between the removal rate and the grinding pressure and the monitored grinding pressure. The second processing module is used to terminate grinding and timing when the total current grinding thickness reaches the target grinding thickness, and obtain the current grinding time. The third processing module is used to measure the actual grinding thickness of the current wafer to be ground, and to calculate the actual removal rate based on the actual grinding thickness and the current grinding time. The fourth processing module is used to calculate the theoretical removal rate based on the monitored grinding pressure and the current grinding time; The fifth processing module is used to update the first relationship based on the difference between the theoretical removal rate and the actual removal rate, so as to adjust the grinding time of the next wafer to be ground using the updated first relationship.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions that, when executed by a processor, implement the method as described in any one of claims 1-6.

9. A grinding time adjustment device for chemical mechanical polishing equipment, characterized in that, include: A memory and a processor, the memory and the processor being communicatively connected to each other, the memory storing computer instructions, the processor executing the computer instructions to perform the method as described in any one of claims 1-6.

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