Semiconductor laser and semiconductor laser device

Abstract

A semiconductor laser (100) comprises: a semiconductor substrate (1); a semiconductor structure (2) formed on the surface of the semiconductor substrate (1) and including an active layer (10) for generating light emitted from an emission end face (101); a surface electrode (20) formed on the surface of the semiconductor structure (2) on the opposite side to the semiconductor substrate (1); and a conductive component (90) formed on the surface of the surface electrode (20) on the opposite side to the semiconductor substrate (1). In the conductive component (90), a part or all of a side surface on the emission end face side, which is parallel to the extending direction of the active layer (10) in the x direction, is formed on the other end face side opposite to the emission end face (101) in the x direction relative to the emission end face (101) of the semiconductor structure (2). The semiconductor laser (100) is formed with a retreat portion (80) formed by retreating at least a part of the conductive component (90) from the emission end face (101) to the other end face side in the x direction.

Description

Technical Field

[0001] The present application relates to semiconductor lasers. Background Art

[0002] When mounting a semiconductor laser chip having an epitaxial layer including a pn junction formed on a semiconductor substrate on a submount, so-called junction-down mounting or epitaxial-side-down mounting is sometimes performed in which the pn junction of the semiconductor laser is mounted opposite to the submount. Patent document 1 discloses the following mounting method: when the semiconductor laser is mounted junction-down, a copper plating layer is interposed between the submount and the semiconductor laser to prevent a short circuit caused by contact between a solder material and an end of a pn junction surface exposed to a light emitting end face.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 5-13820 ( Figure 1 , Figure 3 )

[0004] When a semiconductor laser having an active layer formed between a p-type cladding layer and an n-type cladding layer is mounted junction-down, sometimes sufficient light output cannot be obtained because the bonding components such as the solder material spread to the light emitting end face and cover the active layer to block the emitted light. In the mounting method disclosed in Patent Document 1, the thickness of the copper plating formed on the submount is set to a thickness that the solder material cannot spread to the end of the pn junction surface exposed at the light emitting end face. In the mounting method disclosed in Patent Document 1, it is necessary to use a submount with a copper plating of different sizes, i.e., different areas and thicknesses, depending on the size of the semiconductor laser to be mounted. In the case of purchasing the submount from outside, it is not easy to change the pattern of the wiring, copper plating, etc. of the submount, which sometimes affects the design and manufacture of the semiconductor laser. Summary of the invention

[0005] An object of the technology disclosed in the present application specification is to provide a semiconductor laser in which a bonding member does not spread toward a light emitting end face when junction-down mounting is performed.

[0006] A semiconductor laser of an example disclosed in the present application specification comprises: a semiconductor substrate; a semiconductor structure formed on the surface of the semiconductor substrate and including an active layer that generates light emitted from an emission end face; a surface electrode formed on the surface of the semiconductor structure opposite to the semiconductor substrate; and a conductive component formed on the surface of the surface electrode opposite to the semiconductor substrate. In the conductive component, a part or all of a side surface in the x direction parallel to the extending direction of the active layer, that is, a side surface on the emission end face side, is formed at a position closer to the other end face side opposite to the emission end face in the x direction than the emission end face of the semiconductor structure. The semiconductor laser is formed with a retreated portion formed by retreating at least a part of the conductive component from the emission end face to the other end face side in the x direction.

[0007] A semiconductor laser of an example disclosed in the present application specification has a setback portion formed by forming at least a portion of the side surface on the emission end face side of a conductive component that is set back from the other end face side of the emission end face in the x-direction. Therefore, it is possible to prevent the junction component from spreading toward the light emission end face when the junction is mounted downward. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a cross-sectional view showing a first example of a semiconductor laser and a semiconductor laser device according to the first embodiment.

[0009] Figure 2 This is a perspective view of a first example of the semiconductor laser according to the first embodiment.

[0010] Figure 3 It is a top view of the semiconductor laser and the semiconductor laser device according to the first embodiment.

[0011] Figure 4 yes Figure 2 Surface map of a conductive component.

[0012] Figure 5 Yes means Figure 2 A cross-sectional view of a main portion of a conductive component.

[0013] Figure 6 Yes means Figure 1 A cross-sectional view of a main portion of a conductive component and other bonding parts of a bonding component.

[0014] Figure 7 It is a cross-sectional view showing a second example of the semiconductor laser and the semiconductor laser device according to the first embodiment.

[0015] Figure 8 It is a cross-sectional view showing a third example of the semiconductor laser and the semiconductor laser device according to the first embodiment.

[0016] Fig. 9 Yes means Figure 8 A cross-sectional view of a main portion of a conductive component.

[0017] Fig.10 It is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to the second embodiment.

[0018] Fig.11 This is a perspective view of a semiconductor laser according to the second embodiment.

[0019] Fig.12 yes Fig.11 Surface map of a conductive component.

[0020] Fig.13 Yes means Fig.11 A sectional view of a main portion of a first example of a conductive component.

[0021] Fig.14 Yes means Fig.11 A sectional view of a main portion of a second example of a conductive component.

[0022] Fig.15 Yes means Fig.11 A sectional view of a main portion of a third example of a conductive component.

[0023] Fig.16 It is a diagram for explaining a method for forming a first example of the conductive member according to the second embodiment.

[0024] Fig.17 It is a diagram for explaining a method for forming a first example of the conductive member according to the second embodiment.

[0025] Fig.18 This is a diagram for explaining another method of forming the first example of the conductive member according to the second embodiment.

[0026] Fig.19 This is a diagram for explaining another method of forming the first example of the conductive member according to the second embodiment.

[0027] Fig. 20 The diagrams are for explaining the method for forming the second and third examples of the conductive member according to the second embodiment.

[0028] Fig.21 The diagrams are for explaining the method for forming the second and third examples of the conductive member according to the second embodiment.

[0029] Fig. 22 It is a diagram for explaining a method for forming a second example of the conductive member according to the second embodiment.

[0030] Fig.23It is a diagram for explaining a method for forming a third example of the conductive member according to the second embodiment.

[0031] Fig.24 This is a surface view showing a fourth example of the conductive member according to the second embodiment.

[0032] Fig.25 This is a surface view showing a fifth example of the conductive member according to the second embodiment.

[0033] Fig.26 This is a surface view showing a sixth example of the conductive member according to the second embodiment.

[0034] Fig. 27 It is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to the third embodiment.

[0035] Fig.28 This is a perspective view of a semiconductor laser according to a third embodiment.

[0036] Fig.29 yes Fig.28 Surface image of a semiconductor laser.

[0037] Fig.30 Yes means Fig.28 A sectional view of a main portion of a first example of a conductive component.

[0038] Fig.31 Yes means Fig.28 A sectional view of a main portion of a second example of a conductive component.

[0039] Fig.32 It is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to a fourth embodiment.

[0040] Fig.33 This is a perspective view of a semiconductor laser according to a fourth embodiment.

[0041] Fig.34 yes Fig.33 Surface image of a semiconductor laser.

[0042] Fig.35 This is a perspective view of a semiconductor laser according to the fifth embodiment.

[0043] Fig.36 This is a cross-sectional view of a semiconductor laser and a semiconductor laser device according to the fifth embodiment, with the recessed portion cut away.

[0044] Fig.37 This is a cross-sectional view of a semiconductor laser and a semiconductor laser device according to the fifth embodiment, with the terminal body portion cut away.

[0045] Fig.38 Yes means Fig.35 Surface diagram of a first example of a conductive component.

[0046] Fig.39 Yes means Fig.35 Surface diagram of a second example of a conductive component.

[0047] Fig.40 Yes means Fig.35 Surface diagram of the third example of the conductive component.

[0048] Fig.41 Yes means Fig.35 Surface diagram of the fourth example of the conductive component.

[0049] Fig.42 It is a cross-sectional view showing a first example of a semiconductor laser and a semiconductor laser device according to the sixth embodiment.

[0050] Fig.43 This is a perspective view of a first example of a semiconductor laser according to the sixth embodiment.

[0051] Fig.44 This is a surface diagram showing a first example of a semiconductor laser according to the sixth embodiment.

[0052] Fig.45 This is a diagram for explaining a method for forming a first example of a conductive member according to the sixth embodiment.

[0053] Fig.46 This is a diagram for explaining a method for forming a first example of a conductive member according to the sixth embodiment.

[0054] Fig.47 It is a cross-sectional view showing a second example of the semiconductor laser and the semiconductor laser device according to the sixth embodiment.

[0055] Fig.48 This is a surface diagram showing a second example of the semiconductor laser according to the sixth embodiment.

[0056] Fig.49 It is a cross-sectional view showing a third example of the semiconductor laser and the semiconductor laser device according to the sixth embodiment.

[0057] Fig.50 This is a surface diagram showing a third example of the semiconductor laser involved in embodiment 6.

[0058] Fig.51 This is a surface diagram showing a fourth example of the semiconductor laser according to the sixth embodiment.

[0059] Fig.52This is a cross-sectional view showing a semiconductor laser according to the sixth embodiment and a fourth example of a semiconductor laser device having a recessed portion cut away.

[0060] Fig.53 This is a cross-sectional view of a fourth example of a semiconductor laser and a semiconductor laser device according to the sixth embodiment, with the terminal body portion cut away.

[0061] Fig.54 It is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to a seventh embodiment.

[0062] Fig.55 This is a perspective view of a semiconductor laser according to a seventh embodiment.

[0063] Fig.56 yes Fig.55 Surface image of a semiconductor laser. DETAILED DESCRIPTION

[0064] Implementation Method 1

[0065] Figure 1 is a cross-sectional view showing a first example of a semiconductor laser and a semiconductor laser device according to Embodiment 1, Figure 2 This is a perspective view of a first example of the semiconductor laser according to the first embodiment. Figure 3 It is a top view of the semiconductor laser and the semiconductor laser device according to the first embodiment. Figure 4 yes Figure 2 Surface map of the conductive component, Figure 5 Yes means Figure 2 A cross-sectional view of a main portion of a conductive component. Figure 6 Yes means Figure 1 A cross-sectional view of a main portion of a conductive component and other bonding parts of a bonding component. Figure 7 It is a cross-sectional view showing a second example of the semiconductor laser and the semiconductor laser device according to the first embodiment. Figure 8 is a cross-sectional view showing a third example of the semiconductor laser and the semiconductor laser device according to the first embodiment. Fig. 9 Yes means Figure 8 The semiconductor laser 100 according to the first embodiment includes: a semiconductor substrate 1; a semiconductor structure 2 formed on the surface of the semiconductor substrate 1 and including an active layer 10 for generating light emitted from an emission end face; a first electrode 20 as a surface electrode formed on the surface of the semiconductor structure 2 on the opposite side to the semiconductor substrate 1; a conductive member 90 formed on the surface of the first electrode 20 on the opposite side to the semiconductor substrate 1; and a second electrode 22 as a back electrode formed on the back side of the semiconductor substrate 1. Figure 1The cross-sectional view of the semiconductor laser device shown is a Figure 3 The cross-sectional view of the section 12 shown, Figure 1 The cross section of the semiconductor laser 100 shown is composed of Figure 2 The section 12 shown is a cross section.

[0066] The semiconductor laser device 200 involved in the first embodiment includes a semiconductor laser 100 and a submount 50 on which the semiconductor laser 100 is mounted, and a conductive component 90 of the semiconductor laser 100 is bonded to the submount 50 through a bonding component 40 such as a solder material. The semiconductor laser 100 emits light from the front end face 101 along the optical axis 11, for example. In addition, the semiconductor laser 100 sometimes emits light from the front end face 101 along the optical axis 11, and emits light from the rear end face 102 along the optical axis 11. An arrow is marked in the optical axis 11 for the direction in which the light is emitted from the front end face 101. In the figure, the direction perpendicular to the semiconductor substrate 1 is the z direction, the direction parallel to the extension direction in which the active layer 10 extends is the x direction, and the direction perpendicular to the x direction and the z direction is the y direction.

[0067] The conductive member 90 is formed so that a part of the first electrode 20 side, that is, a part of the front end face 101 side and a part of the rear end face 102 side, on both side surfaces in the x direction parallel to the extending direction in which the active layer 10 extends, respectively retreats toward the end face sides on the opposite sides, and a retreat portion 80 is formed in which at least a part of the conductive member 90 retreats from the front end face 101 and the rear end face 102 in the semiconductor structure 2 toward the other end face side in the x direction. More specifically, the conductive member 90 is formed so that a part of the front end face 101 side retreats toward a position on the other end face side, that is, the rear end face 102 side, which is the emission end face in the semiconductor structure 2, and a part of the rear end face 102 side is formed at a position on the other end face side, that is, the front end face 101 side, which is the other end face side, that is, the rear end face 102 side, which is closer to the semiconductor structure 2 than the rear end face 102 in the semiconductor structure 2. Therefore, the conductive member 90 has a setback portion 80 formed on the front end face 101 side and the rear end face 102 side, and the setback portion 80 is formed by at least a portion of the conductive member 90 being setback from the front end face 101 and the rear end face 102 in the semiconductor structure 2 to the other end face side in the x direction. The setback portion 80 is also a portion where the thickness in the z direction becomes thinner at the end of the conductive member 90 on the positive side in the x direction and the end of the negative side in the x direction. The portion where the thickness in the z direction of the conductive member 90 becomes thinner can also be called an extension portion 92 extending from the main body 91. The portion between the dotted line 13b and the dotted line 13c is the main body 91, and the portion between the dotted line 13a and the dotted line 13b and the portion between the dotted line 13c and the dotted line 13d is the extension portion 92, which is the setback portion 80. The dotted lines 13a and 13d are dotted lines along the extension side surface 98 of the extension portion 92, and the dotted lines 13b and 13c are dotted lines along the main body side surface 97 of the main body 91.

[0068] exist Figure 1 , Figure 2 , Figure 4 , Figure 5 1 is a diagram showing a first example of the conductive member 90. The first example of the conductive member 90 includes, for example, a conductive layer 31 on the first electrode 20 side and a conductive layer 32 on the positive side in the z direction relative to the conductive layer 31. The recessed portion 80 is a portion including both a side surface of the conductive layer 32, that is, a main body side surface 97 which is a side surface of the main body 91, and an extension surface 96 of the extension 92 which faces the submount 50. The recessed portion 80 of the conductive member 90 is formed to include, on both end surface sides in the x direction of the semiconductor structure 2, that is, the front end surface 101 side and the rear end surface 102 side, the extension surface 96 which is a surface of the extension 92 on the opposite side to the semiconductor substrate 1, and a main body side surface 97 of the main body 91 which is connected to the extension surface 96. The length of the recessed portion 80 in the x direction is the same as the length of the extension 92, that is, the extension length Lx. The length of the receding portion 80 in the x direction on the front end face 101 side is the length from the dotted line 13a to the dotted line 13b, and the length of the receding portion 80 in the x direction on the rear end face 102 side is the length from the dotted line 13c to the dotted line 13d. The height of the receding portion 80 in the z direction is the same as the step height Δd between the surface of the conductive layer 31, that is, the extension surface 96, and the surface of the conductive layer 32, and is the same as the difference between the height of the main body 91 in the z direction, that is, the main body height d1, and the height of the extension 92 in the z direction, that is, the extension height d2. In addition, the height of the receding portion 80 in the z direction may also be referred to as the depth of the receding portion 80 in the z direction.

[0069] In the first example of the conductive member 90, the surface electrode side of the two side surfaces facing each other in the x direction and the main body side surface 97 in the y direction are retreated toward the end surface side (front end surface 101 side and rear end surface 102 side) of the semiconductor structure 2 on the opposite side in the x direction, wherein the y direction is perpendicular to the x direction and the z direction perpendicular to the semiconductor substrate 1. In addition, the first example of the conductive member 90 includes a main body 91 and an extension portion 92 extending in the x direction on the surface electrode side of the two side surfaces facing each other in the x direction of the main body 91. The first example of the conductive member 90 is formed with a retreat portion 80 retreated from the front end surface 101 as the emission end surface and the rear end surface 102 as the other end surface to the opposite end surface side in the x direction, and the retreat portion 80 includes an extension surface 96 which is a surface of the extension portion 92 on the opposite side to the semiconductor substrate 1, and a side surface (main body side surface 97) of the main body 91 connected to the extension surface 96. The first example of the recessed portion 80 formed in the conductive member 90 penetrates two side surfaces of the conductive member 90 that are opposed to each other in the y direction.

[0070] The conductive component 90 is, for example, a plated layer, and the conductive layers 31 and 32 are plated layers. The first example of the conductive component 90 can be formed, for example, by a two-layer plating method. A semiconductor structure 2 is formed on a semiconductor substrate 1, and a first electrode 20 is formed on the surface of the semiconductor structure 2 on the opposite side of the semiconductor substrate 1 by a metal sputtering process, and a second electrode 22 is formed on the back surface of the semiconductor substrate 1 on the opposite side of the semiconductor structure 2. The conductive layer 31 is formed on the surface of the first electrode 20 by a first plating process. Thereafter, a resist pattern is formed in which a portion where the receding portion 80 is to be formed is covered by a resist. On the surface of the conductive layer 31 exposed from the opening of the resist pattern, the conductive layer 32 is formed by a second plating process. Compared with the case where the receding portion 80 is formed by an etching process, this method of performing multiple plating processes can be easily manufactured and can improve mass productivity. Furthermore, when performing the first plating step, in order to facilitate the formation of the front end face 101 and the rear end face 102 by cleavage, it is preferable to cover the portions to be cleaved with a resist in advance so that no plating layer is formed.

[0071] The recessed portion 80 of the conductive member 90 may also be formed by etching. A conductive layer 31 having a thickness equal to the main body height d1 is formed on the surface of the first electrode 20 by a plating process. The conductive member 90 can be formed by forming a resist pattern with a partial opening where the recessed portion 80 is to be formed and etching the conductive layer 31 until the height from the surface of the main body 91 to the extension surface 96 of the extension 92 reaches Δd. The recessed portion 80 formed by etching may also be referred to as a recessed portion or an etching recessed portion formed in the conductive layer 31.

[0072] In the first example of the semiconductor laser 100 of the first embodiment, since at least a portion of the side surfaces of the front end face 101 and the rear end face 102 of the conductive component 90 are formed with a setback portion 80 formed by retreating from the front end face 101 and the rear end face 102 toward the other end face side in the x direction, the bonding component 40 squeezed out from the main body 91 during the junction-down installation can be absorbed by the setback portion 80, thereby preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102. Figure 1 , an example is shown in which the joining member 40, that is, the joining member 40a extruded from the main body 91 is joined to the side surface 97 of the main body. Figure 6 FIG. 4 shows an example in which the joining member 40, that is, the joining member 40a, which is extruded from the main body 91, is joined to the main body side surface 97 and the extension surface 96 of the extension 92. Figure 6 In this case, the joining member 40 pushed out from the main body 91 can also be absorbed by the receding portion 80.

[0073] In the case where the receding portion 80 is used to absorb the bonding component 40 extruded from the main body 91 in the x direction, the volume of the receding portion 80 is preferably capable of absorbing the volume of the bonding component 40 extruded from the main body 91 of the conductive component 90 in the x direction. The volume of the receding portion 80 is determined by the step height Δd, the extension length Lx of the extension portion 92 in the x direction, and the extension length Ly in the y direction. Therefore, the step height Δd, the extension length Lx, and the extension length Ly of the conductive component 90 are designed according to the amount of bonding components 40 used in the semiconductor laser device 200. For example, by making the step height Δd or the main body height d1 higher than the height of the bonding component 40 extruded from the main body 91 in the x direction, that is, the bonding component 40a in the z direction, it is also possible to use Figure 7 The conductive member 90 has the recessed portion 80 formed only on one end surface side, as in the semiconductor laser 100 and the semiconductor laser device 200 shown.

[0074] exist Figure 7 In the second example of the conductive component 90 in the second example of the semiconductor laser 100 and the semiconductor laser device 200 shown in the figure, a part of a side surface in the x direction parallel to the extension direction of the active layer 10, i.e., a part of the front end face 101 side, is formed at a position closer to the other end face side opposite to the front end face 101, i.e., the rear end face 102 side, than the emission end face, i.e., the front end face 101 in the semiconductor structure portion 2, thereby forming a retreat portion 80 in which at least a part of the conductive component 90 retreats from the emission end face, i.e., the front end face 101, toward the rear end face 102 side. Figure 7, an example is shown in which the bonding member 40, i.e., the bonding member 40a, which is extruded from the main body 91 on the front end face 101 side is bonded to the main body side 97, and the bonding member 40, i.e., the bonding member 40a, which is extruded from the main body 91 on the rear end face 102 side is bonded to the side of the conductive layer 32 on the submount 50 side of the main body 91. In the second example of the semiconductor laser 100, since at least a portion of the side surface on the front end face 101 side of the conductive member 90 is formed with a receding portion 80 formed by receding from the front end face 101 toward the other end surface side in the x direction, and the depth of the receding portion 80, i.e., the step height Δd, is higher than the height of the bonding member 40, i.e., the bonding member 40a, which is extruded from the main body 91 in the x direction, in the z direction, the bonding member 40a which is extruded from the main body 91 can be absorbed by the receding portion 80 when performing junction-down mounting. Furthermore, the second example of the semiconductor laser 100 can prevent the bonding component 40 from spreading to the front end face 101 and the rear end face 102 because the height of the extruded bonding component 40a in the z direction can be made lower than the height d1 of the main body. In addition, the bonding component 40 can also be bonded to the two side surfaces of the conductive component 90 that are opposite to each other in the x direction at a position closer to the submount 50 than the boundary between the surface electrode, i.e., the first electrode 20, and the conductive component 90 of the semiconductor laser 100. Even in this case, the bonding component 40, i.e., the bonding component 40a, which is extruded from the main body 91 in the x direction, is closer to the submount 50 than the boundary between the surface electrode, i.e., the first electrode 20, and the conductive component 90, and thus can prevent the bonding component 40 from spreading to the front end face 101 and the rear end face 102.

[0075] The second example of the conductive member 90 is formed on the surface electrode side of the side surface on the emission end surface side (front end surface 101 side) and the main body side surface 97 in the y direction perpendicular to the x direction and the z direction perpendicular to the semiconductor substrate 1, and retreats to the other end surface side (rear end surface 102 side) in the x direction. In addition, the second example of the conductive member 90 includes a main body 91 and an extension 92, which extends in the x direction on the surface electrode side of the side surface on the emission end surface side (front end surface 101 side) of the main body 91. The second example of the conductive member 90 is formed with a retreat portion 80 retreated from the front end surface 101 as the emission end surface to the other end surface side (rear end surface 102 side) in the x direction, and the retreat portion 80 includes an extension surface 96 which is a surface of the extension 92 on the opposite side to the semiconductor substrate 1, and a side surface (main body side surface 97) of the main body 91 connected to the extension surface 96. The recessed portion 80 formed in the second example of the conductive member 90 penetrates two side surfaces of the conductive member 90 that are opposed to each other in the y direction.

[0076] The conductive member 90 is not limited to having a setback portion 80 with a single step, but may also have a setback portion 80 with two or more steps. Figure 8, a third example of a semiconductor laser 100 and a semiconductor laser device 200 are shown. The third example of the conductive component 90 includes, for example, conductive layers 31, 32, and 33. The conductive layer 31 is a layer on the first electrode 20 side, the conductive layer 32 is a layer constituting the outermost surface on the positive side in the z direction, and the conductive layer 33 is a layer arranged between the conductive layer 31 and the conductive layer 32.

[0077] The third example of the conductive member 90 is similar to the first example of the conductive member 90, in which the portion between the dotted line 13b and the dotted line 13c is the main body 91, the portion between the dotted line 13a and the dotted line 13b and the portion between the dotted line 13c and the dotted line 13d is the extension portion 92, and the recessed portion 80. The recessed portion 80 is a portion including the main body side surface 97 which is the side surface of the conductive layer 32, which is the side surface of the main body 91, the extension portion surfaces 96a and 96b of the extension portion 92 which are opposed to the submount 50, and the extension portion side surface 99 which is the side surface of the conductive layer 33 in the middle. The recessed portion 80 of the third example of the conductive member 90 is formed to include the main body side surface 97 of the main body 91, the extension portion surface 96b, the extension portion side surface 99, and the extension portion surface 96a which are sequentially connected from the main body side surface 97, on the two end surface sides of the semiconductor structure 2 in the x direction, which are the front end surface 101 side and the rear end surface 102 side.

[0078] The length of the setback portion 80 in the x direction is the same as the length of the extension portion 92, that is, the extension length Lx. The length of the setback portion 80 in the x direction on the front end face 101 side is the length from the dotted line 13a to the dotted line 13b, and the length of the setback portion 80 in the x direction on the rear end face 102 side is the length from the dotted line 13c to the dotted line 13d. The extension length Lx on the positive side in the x direction is the total length of the extension length Lx1 from the dotted line 14a to the dotted line 13b and the extension length Lx2 from the dotted line 13a to the dotted line 14a. The extension length Lx on the negative side in the x direction is the total length of the extension length Lx1 from the dotted line 14b to the dotted line 13c and the extension length Lx2 from the dotted line 13d to the dotted line 14b. The dotted lines 13a and 13d are dotted lines along the extension side 98 of the conductive layer 31 in the extension portion 92, the dotted lines 14a and 14b are dotted lines along the extension side 99 of the conductive layer 33 in the extension portion 92, and the dotted lines 13b and 13c are dotted lines along the main body side 97 of the main body 91.

[0079] The height of the receding portion 80 in the z direction is the step height Δd between the surface of the conductive layer 31, i.e., the extension surface 96a, and the surface of the conductive layer 32, and is the total height of the step height Δd1 between the surface of the conductive layer 32 and the surface of the conductive layer 33, and the step height Δd2 between the surface of the conductive layer 33 and the surface of the conductive layer 31. The height of the main body 91 in the z direction is the main body height d1, and the height of the extension 92 in the z direction is the extension height d2. The extension height d2 is the total height of the height of the conductive layer 31 in the z direction, i.e., the conductive layer height d3a, and the height of the conductive layer 33 in the z direction, i.e., the conductive layer height d3b. The height of the receding portion 80 in the z direction is the difference between the height of the main body 91 in the z direction, i.e., the main body height d1, and the height of the conductive layer 31 in the z direction on the first electrode 20 side of the extension 92, i.e., the extension height d3a.

[0080] The third example of the semiconductor laser 100 of the first embodiment is similar to the first example of the semiconductor laser 100, and has a setback portion 80 formed by retreating at least a portion of the side surfaces on the front end face 101 side and the rear end face 102 side of the conductive component 90 from the front end face 101 and the rear end face 102 toward the other end face side in the x direction, so that the bonding component 40 squeezed out from the main body 91 during the junction-down installation can be absorbed by the setback portion 80, thereby preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102. Figure 8 , an example is shown in which the joining member 40, that is, the joining member 40a which is extruded from the main body portion 91 is joined to the side surface 97 of the main body portion.

[0081] As described above, the semiconductor laser 100 of the first embodiment includes: a semiconductor substrate 1; a semiconductor structure 2 formed on the surface of the semiconductor substrate 1 and including an active layer 10 that generates light emitted from an emission end face (front end face 101); a surface electrode (first electrode 20) formed on the surface of the semiconductor structure 2 on the opposite side to the semiconductor substrate 1; and a conductive member 90 formed on the surface of the surface electrode (first electrode 20) on the opposite side to the semiconductor substrate 1. In the conductive member 90, a part (body side face 97) of a side face on the emission end face side (front end face 101 side) in the x direction parallel to the extending direction of the active layer 10 is formed on the other side face (rear end face 102 side) opposite to the emission end face (front end face 101) in the x direction of the semiconductor structure 2. The semiconductor laser 100 has a setback portion 80 formed by retreating at least a portion (the main body side surface 97) of the conductive component 90 from the emission end face (the front end face 101) toward the other end face side (the rear end face 102 side) in the x direction. The semiconductor laser 100 of Embodiment 1 has a setback portion 80 formed by retreating at least a portion (the main body side surface 97) of the side surface of the emission end face side (the front end face 101 side) of the conductive component 90 from the emission end face (the front end face 101) toward the other end face side (the rear end face 102 side) in the x direction, thereby preventing the junction component 40 from spreading toward the light emission end face (the front end face 101) when performing junction-down mounting.

[0082] The semiconductor laser device 200 of the first embodiment includes a semiconductor laser 100 and a submount 50 on which the semiconductor laser 100 is mounted, and a conductive member 90 of the semiconductor laser 100 is bonded to the submount 50 via a bonding member 40. The semiconductor laser 100 includes: a semiconductor substrate 1; a semiconductor structure 2 formed on the surface of the semiconductor substrate 1 and including an active layer 10 for generating light emitted from an emission end face (front end face 101); a surface electrode (first electrode 20) formed on the surface of the semiconductor structure 2 on the opposite side to the semiconductor substrate 1; and a conductive member 90 formed on the surface of the surface electrode (first electrode 20) on the opposite side to the semiconductor substrate 1. In the conductive member 90, a part (body side surface 97) of one side surface in the x direction parallel to the extending direction in which the active layer 10 extends, that is, the emitting end surface side (front end surface 101 side), is formed at a position closer to the other end surface side (rear end surface 102 side) opposite to the emitting end surface (front end surface 101) in the x direction than the emitting end surface (front end surface 101) in the semiconductor structure 2. The semiconductor laser 100 is formed with a retreated portion 80 in which at least a part (body side surface 97) of the conductive member 90 retreats from the emitting end surface (front end surface 101) to the other end surface side (rear end surface 102 side) in the x direction. The bonding member 40 is bonded to the two side surfaces of the conductive member 90 that are opposite to each other in the x direction at a position closer to the submount 50 side than the boundary between the surface electrode (first electrode 20) of the semiconductor laser 100 and the conductive member 90. The semiconductor laser device 200 of embodiment 1 is formed with a receding portion 80 through this structure in which at least a portion of the side surface (the main body side surface 97) of the emitting end face side (the front end face 101 side) of the conductive component 90 is retreated from the emitting end face (the front end face 101) toward the other end face side (the rear end face 102 side) in the x direction, thereby preventing the bonding component 40 from spreading toward the light emitting end face (the front end face 101) when the junction is mounted downward.

[0083] Implementation Method 2

[0084] Fig.10 is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to Embodiment 2, Fig.11 This is a perspective view of a semiconductor laser according to the second embodiment. Fig.12 yes Fig.11 Surface map of the conductive component, Fig.13 Yes means Fig.11 A sectional view of a main portion of a first example of a conductive component. Fig.14 Yes means Fig.11 A sectional view of a main part of a second example of a conductive member, Fig.15 Yes means Fig.11 A sectional view of a main portion of a third example of a conductive component. Fig.16 , Fig.17Each of them is a diagram for explaining a method for forming a first example of the conductive member according to the second embodiment. Fig.18 , Fig.19 Each of them is a diagram for explaining another method of forming the first example of the conductive member according to the second embodiment. Fig. 20 , Fig.21 These are diagrams for explaining the methods for forming the second and third examples of the conductive member according to the second embodiment. Fig. 22 1 is a diagram for explaining a method for forming a second example of a conductive member according to Embodiment 2. Fig.23 It is a diagram for explaining a method for forming a third example of the conductive member according to the second embodiment. Fig.24 is a surface diagram showing a fourth example of the conductive component involved in the second embodiment, Fig.25 This is a surface view showing a fifth example of the conductive member according to the second embodiment. Fig.26 1 is a surface view showing a sixth example of the conductive member according to Embodiment 2. The semiconductor laser 100 and the semiconductor laser device 200 according to Embodiment 2 are different from the semiconductor laser 100 and the semiconductor laser device 200 according to Embodiment 1 in that the conductive member 90 includes a groove 60. Fig.11 In the figure, the pattern of the conductive layer 32 is omitted in order to clearly understand the groove 60. The parts different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment will be mainly described.

[0085] The conductive component 90 has a groove 60 penetrating two side surfaces facing each other in the y direction or a groove 60 connected to the side surface in the y direction on the surface of the main body 91 on the opposite side to the semiconductor substrate 1. The first example of the conductive component 90 is an example in which two grooves 60 extending in the y direction are provided, and the depth of the groove 60 in the z direction, that is, the groove depth Δg is the same as the step height Δd of the receding portion 80. The second example of the conductive component 90 is an example in which two grooves 60 extending in the y direction are provided, and the groove depth Δg of the groove 60 is greater than the step height Δd of the receding portion 80. The third example of the conductive component 90 is an example in which two grooves 60 extending in the y direction are provided, and the groove depth Δg of the groove 60 is less than the step height Δd of the receding portion 80. The second and third examples of the conductive component 90 are examples in which the groove depth Δg of the groove 60 is different from the step height Δd of the receding portion 80. The groove 60 is formed between the dotted line 15a and the dotted line 15b, and between the dotted line 15c and the dotted line 15d. The width of the two grooves 60 in the x direction, that is, the groove width Lg, is, for example, the same. The conductive member 90 having the groove 60 connected to the side surface in the y direction is a sixth example. Fig.26 Shown in.

[0086] Since the conductive component 90 has the setback portion 80 on the front end face 101 side and the rear end face 102 side and has the groove 60 in the main body 91, the bonding component 40 around the groove 60 can be absorbed by the groove 60 when the junction is mounted downward, and the bonding component 40 squeezed out from the main body 91 can be absorbed by the setback portion 80. Therefore, the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment can prevent the bonding component 40 from spreading to the front end face 101 and the rear end face 102 when the junction is mounted downward, similar to the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment. Fig.10 , an example is shown in which a joining member 40 a that is a joining member 40 extruded from the main body 91 is joined to the main body side surface 97 , and a joining member 40 b that is a part of the joining member 40 is joined to the side surface of the groove 60 in the x direction.

[0087] Since the groove 60 can absorb the bonding member 40, the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment can reduce the extrusion of the bonding member 40 to the side of the receding portion 80 compared with the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment, and thus can improve the effect of preventing the bonding member 40 from spreading to the front end face 101 and the rear end face 102 compared with the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment. Since the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment have the groove 60 in the conductive member 90, the surface area of ​​the conductive member 90 on the side of the submount 50 can be larger than that of the conductive member 90 of the first embodiment, that is, it is larger than that of the conductive member 90 of the first embodiment by an amount corresponding to the surface area of ​​the side surface of the groove 60 in the x direction, and thus can improve the heat dissipation to the submount 50 compared with the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment.

[0088] The conductive member 90 is, for example, a plated layer, and the conductive layers 31 and 32 are plated layers. The first example of the conductive member 90 can be formed, for example, by a two-layer plating method. The first electrode 20 is formed on the surface of the semiconductor structure 2 opposite to the semiconductor substrate 1 by a metal sputtering process, and the second electrode 22 is formed on the back surface of the semiconductor substrate 1 opposite to the semiconductor structure 2. The conductive layer 31 is formed on the surface of the first electrode 20 by a first plating process. Thereafter, as shown in FIG. Fig.16As shown in FIG. 1 , a resist pattern 41 is formed in which the portion where the recessed portion 80 and the groove 60 are to be formed is covered with the resist. The portion between the dotted line 13a and the dotted line 13b, and the portion between the dotted line 13c and the dotted line 13d is the portion where the recessed portion 80 is to be formed, and the portion between the dotted line 15a and the dotted line 15b, and the portion between the dotted line 15c and the dotted line 15d is the portion where the groove 60 is to be formed. The conductive layer 32 is formed by a second plating process on the surface of the conductive layer 31 exposed from the opening of the resist pattern 41. By removing the resist pattern 41, as shown in FIG. Fig.17 As shown, a conductive member 90 including a recessed portion 80 and a groove 60 is formed.

[0089] The groove depth Δg of the groove 60 and the step height Δd of the receding portion 80 in the conductive member 90 can be adjusted according to the amount of the bonding member 40 used. When the groove depth Δg of the groove 60 and the step height Δd of the receding portion 80 are larger when the amount of the bonding member 40 used is large than when the amount of the bonding member 40 used is small, the effect of preventing the bonding member 40 from spreading to the front end face 101 and the rear end face 102 can be improved. The groove depth Δg of the groove 60 and the step height Δd of the receding portion 80 can be set to a height corresponding to the thickness of the resist pattern 41 in the z direction. For example, if the thickness of the resist pattern 41 in the z direction is increased, the groove depth Δg of the groove 60 and the step height Δd of the receding portion 80 become larger, and if the thickness of the resist pattern 41 in the z direction is reduced, the groove depth Δg of the groove 60 and the step height Δd of the receding portion 80 become smaller. This method of performing multiple plating steps can be easily manufactured, thereby improving mass productivity, compared with the case of forming the recessed portion 80 and the groove 60 by etching. In addition, when performing the first plating step, in order to easily form the front end face 101 and the rear end face 102 by cleavage, it is preferred that the portion to be cleaved is covered with a resist in advance without forming a plating layer.

[0090] The recessed portion 80 of the conductive member 90 may also be formed by etching. Fig.18 , Fig.19 2 shows a first example of a method for forming the conductive member 90 using etching. A conductive layer 31 having a thickness of the main body height d1 is formed on the surface of the first electrode 20 by a plating process. The height of the conductive layer 31 in the z direction is the same as the main body height d1 of the main body 91, so it is formed thicker than Fig.16 , Fig.17 The conductive layer 31 having a thickness equal to the height d1 of the main body is formed on the surface of the first electrode 20 by a plating process. Fig.18As shown, a resist pattern 41 is formed to partially open the recessed portion 80 and the groove 60. The opening portion shown between the dotted line 13a and the dotted line 13b, and between the dotted line 13c and the dotted line 13d is a portion where the recessed portion 80 is formed, and the opening portion shown between the dotted line 15a and the dotted line 15b, and between the dotted line 15c and the dotted line 15d is a portion where the groove 60 is formed. Thereafter, the conductive layer 31 is etched until the height from the surface of the main body 91 to the extension surface 96 of the extension 92 becomes Δd, and the depth from the surface of the main body 91 to the bottom surface 61 of the groove 60 becomes Δg which is the same as Δd. After the etching process, the resist pattern 41 is removed, thereby Fig.19 As shown in FIG. 1 , a conductive member 90 including a recessed portion 80 and a groove 60 is formed. The recessed portion 80 and the groove 60 formed by etching may also be referred to as a recessed portion formed in the conductive layer 31 or an etching recessed portion.

[0091] In addition, by combining the two-layer plating method and the etching process, it is possible to form the conductive member 90 having a groove depth Δg different in size from the step height Δd of the receding portion 80. Fig. 20 As shown in FIG. 1 , a resist pattern 41 is formed on the surface of the conductive layer 31 formed on the surface of the first electrode 20 by the first plating process, in which the portion where the recessed portion 80 is to be formed is covered with a resist. A conductive layer 32 is formed on the surface of the conductive layer 31 exposed from the opening of the resist pattern by the second plating process, and the resist pattern 41 is removed, thereby forming a conductive component 90 in which only the recessed portion 80 is formed. This is the same as the case where the conductive component 90 of the first embodiment is formed by the two-layer plating method. Thereafter, as shown in FIG. Fig.21 As shown in FIG. 1 , a resist pattern 42 is formed with an opening in a portion where the groove 60 is to be formed. The opening portion shown between the dotted line 15a and the dotted line 15b, and between the dotted line 15c and the dotted line 15d is a portion where the groove 60 is to be formed. Thereafter, the conductive layer 32 is etched until the depth from the surface of the main body 91 to the bottom surface 61 of the groove 60 reaches Δg, or the conductive layer 32 and the conductive layer 31 are etched. After the etching process, the resist pattern 41 is removed, thereby Fig. 22 or Fig.23 As shown, a conductive member 90 including a recessed portion 80 and a groove 60 is formed.

[0092] Fig. 22 The conductive member 90 shown is a second example of the conductive member obtained by etching the conductive layers 32 and 31. The groove 60 formed by etching in the second example of the conductive member 90 can also be referred to as a recessed portion formed in the conductive layers 31 and 32 or an etching recessed portion. Fig.23The conductive member 90 shown is a third example of a conductive member in which the conductive layer 32 is etched. The groove 60 formed by etching in the third example of the conductive member 90 can also be referred to as a recessed portion or an etching recessed portion formed in the conductive layer 32. By combining the two-layer plating method and the etching process, the step height Δd of the receding portion 80 and the groove depth Δg of the groove 60 can be independently adjusted according to the amount of the bonding member 40 used.

[0093] Although in Figure 10 to Figure 23 The example in which the receding portion 80 is a single layer is shown, but the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment may also include Figure 8 The two or more layers of the retreat portion 80 shown may also be Figure 7 As shown, the setback portion 80 is formed only on one end surface side. Figure 8 In the third example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment shown in the figure, the conductive member 90 having the groove 60 is applied, and it is also possible to Figure 7 The semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment of the illustrated embodiment 1 use a conductive member 90 having a groove 60. The semiconductor laser 100 and the semiconductor laser device 200 can improve the effect of preventing the bonding member 40 from spreading to the front end face 101 and the rear end face 102 of the third example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment or the second example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment, respectively, by the absorption effect of the groove 60 on the bonding member 40, and can improve the heat dissipation as the surface area of ​​the submount 50 side in the conductive member 90 is increased by the groove 60.

[0094] The number of the grooves 60 of the conductive component 90 is not limited to two. The number of the grooves 60 of the conductive component 90 may be three or more. The greater the number of the grooves 60, the greater the effect of preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102 and the effect of heat dissipation. Fig.24 FIG. 4 shows a fourth example of a conductive member 90 having three grooves 60. In addition, the grooves 60 are not limited to extending in the y direction perpendicular to the x direction, and may also extend in the y direction perpendicular to the x direction. Fig.25 In this way, the y direction is extended. Fig.25 , an example is shown in which two grooves 60 penetrate two side surfaces of the main body 91 that are opposite to each other in the y direction in a manner inclined from the y direction. The grooves 60 of the conductive member 90 are not limited to the example of penetrating two side surfaces of the main body 91 that are opposite to each other in the y direction, and may also be as follows: Fig.26 The groove shown is connected to the side surface in the y direction rather than being through. Fig.266 shows a sixth example of a conductive component 90 having four grooves 60 extending to the periphery of the active layer 10 on the positive side of the y direction and four grooves 60 extending to the periphery of the active layer 10 on the negative side of the y direction on the side surface of the main body 91 in the y direction. In addition, the sixth example of the conductive component 90 shows an example in which the grooves 60 adjacent to the recessed portion 80 are connected to the recessed portion 80 via the connecting grooves 62. The four grooves 60 extending to the periphery of the active layer 10 on the positive side of the y direction are formed in Fig.26 On the side surface of the main body 91 on the upper side of the paper, four grooves 60 extending to the periphery of the active layer 10 on the negative side in the y direction are formed. Fig.26 The side of the main body 91 on the lower side of the paper. In addition, the groove 60 connected to the side in the y direction may extend from one side in the y direction beyond the active layer 10 to the other side in the y direction. Even if the groove 60 does not penetrate the side of the main body 91 in the y direction that is opposite to each other as in the sixth example of the conductive component 90, the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment having the groove 60 and the retreat portion 80 can improve the effect of preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102, and can improve the heat dissipation as the surface area on the side of the sub-mount 50 in the conductive component 90 achieved by the groove 60 increases.

[0095] Implementation 3

[0096] Fig. 27 is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to Embodiment 3, Fig.28 This is a perspective view of a semiconductor laser according to a third embodiment. Fig.29 yes Fig.28 Surface image of a semiconductor laser. Fig.30 Yes means Fig.28 A sectional view of a main part of a first example of a conductive member, Fig.31 Yes means Fig.28 A cross-sectional view of the main parts of a second example of a conductive component. The semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment are different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment in that an adhesion preventing component 72 that prevents the adhesion of the bonding component 40 is formed on the receding portion 80 of the conductive component 90. The following mainly describes the parts that are different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment. The adhesion preventing component 72 is, for example, an insulating film 71 such as a resist 70, a silicon oxide film such as SiOx, or a silicon nitride film such as SiNx. Fig.30 An example in which the adhesion preventing member 72 is a resist 70 is shown. Fig.317 shows an example in which the adhesion preventing member 72 is an insulating film 71. The adhesion preventing member 72 covers the extension surface 96 and the main body side surface 97 of the receding portion 80 from the dotted line 13a to the dotted line 13b, and covers the extension surface 96 and the main body side surface 97 of the receding portion 80 from the dotted line 13c to the dotted line 13d. The portion from the dotted line 16a to the dotted line 13b and the portion from the dotted line 16b to the dotted line 13c of the adhesion preventing member 72 are portions covering the main body side surface 97 of the receding portion 80.

[0097] The semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment have the adhesion preventing member 72 that prevents the adhesion of the bonding member 40 formed on the receding portion 80 of the conductive member 90, so that the bonding member 40 squeezed out from the main body 91 during the junction-down mounting can be prevented from climbing from the receding portion 80 to the extension side 98 of the extension 92. Therefore, the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment can prevent the bonding member 40 from spreading to the front end face 101 and the rear end face 102. In the semiconductor laser device 200 of the third embodiment, the bonding member is not connected to the side surface in the x direction of the receding portion 80 of the conductive member 90 on which the adhesion preventing member 72 is formed, that is, the main body side surface 97. The bonding member 40 such as the solder material squeezed out from the main body 91 during the junction-down mounting is bonded to the side surface in the y direction of the conductive member 90 more than when the adhesion preventing member 72 is not formed on the receding portion 80.

[0098] The semiconductor laser 100 of the third embodiment forms an adhesion-inhibiting member 72 on the receding portion 80 after forming the conductive member 90 of the semiconductor laser 100 of the first embodiment. When the adhesion-inhibiting member 72 is a resist 70, the resist 70 is applied to the semiconductor laser 100 on which the adhesion-inhibiting member is not formed by a spin coater. Thereafter, the resist 70 is subjected to patterning and curing treatment such as UV curing by exposure and development treatment, thereby manufacturing the semiconductor laser 100 of the third embodiment having the adhesion-inhibiting member 72 of the resist 70 on the receding portion 80. The resist 70 may be a positive type or a negative type. When the adhesion-inhibiting member 72 is an insulating film 71, the insulating film 71 is formed on the semiconductor laser 100 on which the adhesion-inhibiting member 72 is not formed by an insulating film forming device. Thereafter, a resist pattern having openings except for the portion where the insulating film 71 remains is formed, and the exposed insulating film 71 is etched, thereby manufacturing the semiconductor laser 100 according to the third embodiment having the insulating film 71 adhesion preventing member 72 in the recessed portion 80 .

[0099] Implementation 4

[0100] Fig.32is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to a fourth embodiment. Fig.33 This is a perspective view of a semiconductor laser according to a fourth embodiment. Fig.34 yes Fig.33 Surface diagram of a semiconductor laser. The semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment are different from the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment in that the conductive member 90 has a groove 60. The following mainly describes the parts that are different from the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment. Fig.32 In the figure, the pattern of the conductive layer 32 is omitted to clearly understand the groove 60, and the pattern of the adhesion preventing member 72 is added to clearly understand the adhesion preventing member 72.

[0101] The conductive component 90 has a groove 60 penetrating two side surfaces facing each other in the y direction or a groove 60 connected to the side surfaces in the y direction on the surface of the main body 91 on the opposite side to the semiconductor substrate 1. The groove 60 in the conductive component 90 of the fourth embodiment can use the groove 60 in the first to sixth examples of the conductive component 90 described in the second embodiment. Figure 32 to Figure 34 , an example of the groove 60 in the first example of the conductive member 90 described in Embodiment 2 is shown. The method of forming the conductive member 90 having the groove 60 and the recessed portion 80 is as described in Embodiment 2. After the conductive member 90 having the groove 60 and the recessed portion 80 is formed, the adhesion inhibiting member 72 described in Embodiment 3 is formed on the recessed portion 80. Fig.34 is Fig.29 Two drawings are added showing the grooves 60. The portions where the grooves 60 are formed are the portions shown between the dotted line 15a and the dotted line 15b, and between the dotted line 15c and the dotted line 15d.

[0102] Since the conductive component 90 has a setback portion 80 formed with an adhesion-inhibiting component 72 on the front face 101 side and the rear face 102 side, and has a groove 60 in the main body 91, the bonding component 40 around the groove 60 can be absorbed by the groove 60 when the junction is mounted downward, and the adhesion-inhibiting component 72 can prevent the bonding component 40 squeezed out from the main body 91 from climbing from the setback portion 80 to the extension side 98 of the extension portion 92. Therefore, the semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment can prevent the bonding component 40 from spreading to the front face 101 and the rear face 102 when the junction is mounted downward, similar to the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment. Fig.32 , an example is shown in which a bonding member 40 b as a part of the bonding member 40 is bonded to a side surface of the groove 60 in the x direction.

[0103] In the semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment, since the groove 60 can absorb the bonding member 40, the extrusion of the bonding member 40 to the side of the receding portion 80 can be reduced compared with the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment, and the effect of preventing the bonding member 40 from spreading to the front end face 101 and the rear end face 102 can be improved compared with the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment. Since the semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment have the groove 60 in the conductive member 90, the surface area of ​​the conductive member 90 on the side of the submount 50 can be made larger than that of the conductive member 90 of the third embodiment, that is, larger than that of the conductive member 90 of the third embodiment by an amount corresponding to the surface area of ​​the side surface of the groove 60 in the x direction, and thus the heat dissipation to the submount 50 can be improved compared with the semiconductor laser 100 and the semiconductor laser device 200 of the third embodiment.

[0104] The structure of the recessed portion 80 of the conductive member 90 may also be the same as the structure of the recessed portion 80 in the second example of the semiconductor laser 100 described in the first embodiment (see Figure 7 ), the structure of the receding portion 80 in the third example of the semiconductor laser 100 (refer to Figure 8 ) As described in the third embodiment, the adhesion inhibiting member 72 is, for example, a resist 70, an insulating film 71 such as a silicon oxide film or a silicon nitride film.

[0105] Implementation method 5

[0106] Fig.35 This is a perspective view of a semiconductor laser according to the fifth embodiment. Fig.36 is a cross-sectional view of a semiconductor laser and a semiconductor laser device according to Embodiment 5, wherein a recessed portion is cut off. Fig.37 This is a cross-sectional view of a semiconductor laser and a semiconductor laser device according to the fifth embodiment, with the terminal body portion cut away. Fig.38 Yes means Fig.35 Surface diagram of the first example of a conductive component, Fig.39 Yes means Fig.35 Surface diagram of a second example of a conductive component. Fig.40 Yes means Fig.35 Surface diagram of the third example of a conductive component, Fig.41 Yes means Fig.35The semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment are different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment in that a setback portion 80 is formed on at least one side of the front face 101 side and the rear face 102 side, except for the portion of the conductive member 90 including the active layer 10. The parts different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment will be mainly described.

[0107] A top view of the semiconductor laser device 200 and Figure 3 Same. However, Figure 3 The section 12 shown corresponds to Fig.35 Section 12a is equivalent to Figure 3 It is arranged at the lower side of the cross section 12. Fig.36 The cross-section of the semiconductor laser 100 and the semiconductor laser device 200 shown is Fig.35 The section 12a shown is a cross section after cutting. Fig.37 The cross-section of the semiconductor laser 100 and the semiconductor laser device 200 shown is Fig.35 The cross section after the section 12b is cut off is shown. Fig.35 In the figure, it is shown that Fig.38 The semiconductor laser 100 of the first example of the conductive member 90 shown in FIG. The first example of the conductive member 90 is formed such that a part of the first electrode 20 side on both side surfaces in the x direction, that is, a part of the front end face 101 side and a part of the rear end face 102 side are respectively retreated toward the end face side on the opposite side, thereby forming four retreated portions 80 formed by retreating at least a part of the conductive member 90 from the front end face 101 and the rear end face 102 in the semiconductor structure 2 toward the other end face side in the x direction. Two retreated portions 80 are formed on the front end face 101 side, and two retreated portions 80 are formed on the rear end face 102 side.

[0108] A terminal main body 85 is formed between two setback portions 80 in the y direction on the front end surface 101 side, and a terminal main body 85 is formed between two setback portions 80 in the y direction on the rear end surface 102 side. Fig.35The side surface 86 of the end body 85 in the x direction and the side surface 87 of the end body 85 in the y direction are also shown. As described in the first embodiment, the receding portion 80 is also a portion where the thickness in the z direction becomes thinner at the end of the conductive member 90 on the positive side in the x direction and the end of the conductive member 90 on the negative side in the x direction, and the portion where the thickness in the z direction becomes thinner is also an extension portion 92 extending from the main body 91. The portion between the dotted line 13b and the dotted line 13c is the main body 91. The portion between the dotted line 13a and the dotted line 13b and between the dotted line 13c and the dotted line 13d other than the end body 85 is the extension portion 92, and is the receding portion 80. The dotted lines 13a and 13d are dotted lines along the extension side surface 98 of the extension portion 92 and the end body side surface 86 of the end body 85, and the dotted lines 13b and 13c are dotted lines along the main body side surface 97 of the main body 91. The dotted line 17a is a dotted line along the end body side surface 87 on the positive side in the y direction of the end body 85 on the front end surface 101 side, and the dotted line 17b is a dotted line along the end body side surface 87 on the negative side in the y direction of the end body 85 on the front end surface 101 side. The dotted line 17c is a dotted line along the end body side surface 87 on the positive side in the y direction of the end body 85 on the rear end surface 102 side, and the dotted line 17d is a dotted line along the end body side surface 87 on the negative side in the y direction of the end body 85 on the rear end surface 102 side. In addition, although the body 91 and the end body 85 are distinguished, the thickness of the end body 85 in the z direction is the same as that of the body 91, and the end body 85 can also be called a part of the body 91. The semiconductor laser 100 of the fifth embodiment is formed such that the main body portion (main body portion 91 including the terminal main body portion 85 ) having a thickness in the z direction thicker than the extension portion 92 of the conductive member 90 includes the active layer 10 , that is, includes the surface side of the active layer 10 opposite to the semiconductor substrate 1 .

[0109] The lengths in the y direction of the setback portion 80 formed on the negative side in the y direction on the front end face 101 side and the setback portion 80 formed on the negative side in the y direction on the rear end face 102 side are the same as the lengths in the y direction of the extension portion 92 formed on the negative side in the y direction on the front end face 101 side and the extension portion 92 formed on the negative side in the y direction on the rear end face 102 side, that is, the extension length Ly1. The lengths in the y direction of the setback portion 80 formed on the positive side in the y direction on the front end face 101 side and the setback portion 80 formed on the positive side in the y direction on the rear end face 102 side are the same as the lengths in the y direction of the extension portion 92 formed on the positive side in the y direction on the front end face 101 side and the extension portion 92 formed on the positive side in the y direction on the rear end face 102 side, that is, the extension length Ly2. The length in the y direction of the setback portion 80 formed on the negative side in the y direction on the front end face 101 side is the length from the dotted line 17b to the side surface on the negative side in the y direction of the main body 91, and the length in the y direction of the setback portion 80 formed on the negative side in the y direction on the rear end face 102 side is the length from the dotted line 17d to the side surface on the negative side in the y direction of the main body 91. The length in the y direction of the setback portion 80 formed on the positive side in the y direction on the front end face 101 side is the length from the dotted line 17a to the side surface on the positive side in the y direction of the main body 91, and the length in the y direction of the setback portion 80 formed on the positive side in the y direction on the rear end face 102 side is the length from the dotted line 17c to the side surface on the positive side in the y direction of the main body 91.

[0110] The length of the two receding portions 80 formed on the front end face 101 side in the x direction is the same as the length of the end body portion 85 formed on the front end face 101 side in the x direction, that is, the end body portion length Ld1. The end body portion length Ld1 is also the length of the two extending portions 92 formed on the front end face 101 side. The length of the two receding portions 80 formed on the rear end face 102 side in the x direction is the same as the length of the end body portion 85 formed on the rear end face 102 side in the x direction, that is, the end body portion length Ld2. The end body portion length Ld2 is also the length of the two extending portions 92 formed on the rear end face 102 side. The length of the two receding portions 80 and the end body portion 85 formed on the front end face 101 side in the x direction is the length from the dotted line 13a to the dotted line 13b. The length of the two receding portions 80 and the end body portion 85 formed on the rear end face 102 side in the x direction is the length from the dotted line 13c to the dotted line 13d. The lengths Ly1 and Ly2 of the receding portion 80 in the y direction may be the same or different. The lengths Ld1 and Ld2 of the receding portion 80 and the terminal body portion 85 in the x direction may be the same or different.

[0111] In the first example of the conductive member 90, the surface electrode sides of the two side surfaces facing each other in the x direction and at least a part of the y direction perpendicular to the x direction and the z direction perpendicular to the semiconductor substrate 1, namely the main body side surface 97, are retreated toward the end surface side (front end surface 101 side, rear end surface 102 side) of the semiconductor structure 2 on the opposite side in the x direction. In addition, the first example of the conductive member 90 includes a main body 91 and an extension portion 92, which extends along the x direction on the surface electrode sides of the two side surfaces facing each other in the x direction and at least a part of the y direction of the main body 91. The first example of the conductive member 90 is formed with a retreat portion 80 retreated from the front end surface 101 as the emission end surface and the rear end surface 102 as the other end surface to the opposite end surface side in the x direction, and the retreat portion 80 includes an extension portion surface 96 which is a surface of the extension portion 92 on the opposite side to the semiconductor substrate 1, and a side surface (main body side surface 97, terminal main body side surface 87) of the main body 91 connected to the extension portion surface 96. The recessed portion 80 of the first example formed in the conductive member 90 does not penetrate through two side surfaces of the conductive member 90 that are opposed to each other in the y direction.

[0112] The semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment of the first example having the conductive component 90 are different from the first example of the semiconductor laser 100 of the first embodiment in that the conductive component 90 has an end main body portion 85 including the active layer 10 on the front face 101 side and the rear face 102 side, and the other structures are the same as the first example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment. Therefore, the semiconductor laser 100 of the fifth embodiment of the first example having the conductive component 90 has the same effect as the first example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment. Since the retreat portion 80 formed by retreating at least a portion of the side surface on the front face 101 side and the rear face 102 side of the first example of the conductive component 90 from the front face 101 and the rear face 102 toward the other end face side in the x direction is formed, the bonding component 40 squeezed out from the main body 91 when the junction-down mounting is performed can be absorbed by the retreat portion 80, thereby preventing the bonding component 40 from spreading to the front face 101 and the rear face 102. Fig.36 , Fig.37 , an example is shown in which the joining member 40 extruded from the main body 91, namely the joining member 40a, is joined to the main body side surface 97 of the retreating portion 80, and the joining member 40 is not joined to the side surface in the x direction of the terminal main body 85, namely the terminal main body side surface 86.

[0113] The conductive component 90 is, for example, a plated layer, and the conductive layers 31 and 32 are plated layers. The first example of the conductive component 90 can be formed by, for example, a two-layer plating method as described in Embodiment 1. This method of performing multiple plating steps can be easily manufactured compared to the case where the recessed portion 80 is formed by etching, thereby improving mass productivity. In addition, the recessed portion 80 of the conductive component 90 can also be formed by etching.

[0114] Fig.38 The first example of the conductive member 90 shown shows an example in which a total of four recessed portions 80 are formed on the front end surface 101 side and the rear end surface 102 side, but the number of the recessed portions 80 is not limited to four. Fig.39 The second example of the conductive member 90 shown is an example in which one recessed portion is formed on the front end surface 101 side. Fig.40 The third example of the conductive member 90 shown is an example in which two recessed portions 80 are formed on the front end surface 101 side. Fig.41 The fourth example of the conductive member 90 shown is an example in which two recessed portions 80 are formed on the front end surface 101 side, and one recessed portion 80 is formed on the rear end surface 102 side. Figure 7 The second example of the conductive member 90 according to the first embodiment shown is similarly an example in which the recessed portion 80 is formed only on one end surface side.

[0115] exist Fig.39 In the figure, the terminal body portion 85 is the range in the x direction from the dotted line 13a to the dotted line 13b, and is the range in the y direction from the dotted line 17b to the side surface of the main body portion 91 on the positive side in the y direction. Fig.40 In the embodiment, the terminal main body 85 and Fig.38 The end main body portion 85 on the positive side in the x direction is the same. Fig.41 In the figure, the end main body portion 85 on the positive side in the x direction is Fig.38 The end main body portion 85 on the positive side in the x direction is the same. Fig.41 In the figure, the terminal body portion 85 on the negative side in the x direction is the range in the x direction from the dotted line 13c to the dotted line 13d, and is the range in the y direction from the dotted line 17d to the side surface of the body portion 91 on the positive side in the y direction.

[0116] The semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment including the second and third examples of the conductive member 90 function as Figure 7 The semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment of the fifth embodiment having the conductive member 90 have the same effect as the first example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment.

[0117] Although in Figure 35 to Figure 41 The example in which the receding portion 80 is a single layer is shown, but the semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment may also include Figure 8 In the semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment, the groove 60 shown in the second embodiment may be formed in the conductive member 90 , and the adhesion preventing member 72 shown in the third embodiment may be formed in the recessed portion 80 .

[0118] Implementation 6

[0119] Fig.42 is a cross-sectional view showing a first example of a semiconductor laser and a semiconductor laser device according to Embodiment 6, Fig.43 This is a perspective view of a first example of a semiconductor laser according to the sixth embodiment. Fig.44 This is a surface diagram showing a first example of a semiconductor laser according to the sixth embodiment. Fig.45 , Fig.46 Each of them is a diagram for explaining a method for forming a first example of a conductive member according to the sixth embodiment. Fig.47 is a cross-sectional view showing a second example of a semiconductor laser and a semiconductor laser device according to Embodiment 6, Fig.48 This is a surface diagram showing a second example of the semiconductor laser according to the sixth embodiment. Fig.49 is a cross-sectional view showing a third example of a semiconductor laser and a semiconductor laser device according to Embodiment 6, Fig.50 This is a surface diagram showing a third example of the semiconductor laser involved in embodiment 6. Fig.51 This is a surface diagram showing a fourth example of the semiconductor laser according to the sixth embodiment. Fig.52 is a cross-sectional view of a semiconductor laser and a fourth example of a semiconductor laser device according to Embodiment 6, wherein the recessed portion is cut off. Fig.53 1 is a cross-sectional view of a fourth example of a semiconductor laser and a semiconductor laser device according to Embodiment 6 after cutting off the terminal main body. The semiconductor laser 100 and the semiconductor laser device 200 according to Embodiment 6 are different from the semiconductor lasers 100 and the semiconductor laser devices 200 according to Embodiments 1 to 5 in that the retreat portion 80 is not formed on the conductive member 90, but a retreat portion 80 is formed in which a part or all of the side surface on the side of the front end face 101 of the conductive member 90 on the x direction is retreated from the front end face 101 of the semiconductor structure 2 to the other end face side on the x direction, that is, the rear end face 102 side. The parts different from the semiconductor lasers 100 and the semiconductor laser devices 200 according to Embodiments 1 to 5 will be mainly described.

[0120] use Figures 42 to 46, a first example of a semiconductor laser 100 and a semiconductor laser device 200 according to a sixth embodiment is described. The first example of the semiconductor laser 100 and the semiconductor laser device 200 according to the sixth embodiment is an example of a setback portion 80 formed by retreating from the front end face 101 and the rear end face 102 of the semiconductor structure portion 2 toward the other end face side in the x direction on both sides of the conductive component 90. The conductive component 90 of the first example of the sixth embodiment is a structure that does not include an extension portion 92 and is formed only by a main body portion 91. Fig.44 As shown in the surface diagram of the semiconductor laser 100, both ends of the first electrode 20 in the x direction are exposed. The range from the dotted line 18a to the dotted line 18b and the range from the dotted line 18c to the dotted line 18d are the first electrode exposure portion 21 where the first electrode 20 is exposed. The dotted line 18b is a dotted line of the main body side 97, which is a boundary formed by retreating along the side surface of the conductive component 90 on the positive side in the x direction toward the opposite side surface, and the dotted line 18c is a dotted line of the main body side 97, which is a boundary formed by retreating along the side surface of the conductive component 90 on the negative side in the x direction toward the opposite side surface. Therefore, the range from the dotted line 18a to the dotted line 18b and the range from the dotted line 18c to the dotted line 18d are the retreat portion 80. Fig.44 Also shown are the length of the semiconductor laser 100 in the x direction, i.e., the laser length Lr, the length of the conductive component 90 in the x direction, i.e., the conductive component length Lc, and the length of the retreat portion 80 in the y direction, i.e., the retreat portion length Ls, which is equal to the length of the conductive component 90 in the y direction.

[0121] In the first example of the conductive component 90 of embodiment 6, the conductive component length Lc is shorter than the length of the semiconductor laser 100 in the resonator direction, that is, the laser length Lr. Since the first example of the semiconductor laser 100 of embodiment 6 has a receding portion 80 formed on the front end face 101 side and the rear end face 102 side of the semiconductor structure portion 2, similarly to the semiconductor laser 100 of embodiment 1, the bonding component 40 squeezed out from the main body 91 during junction-down mounting can be absorbed by the receding portion 80, thereby preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102.

[0122] The conductive member 90 is, for example, a plated layer, and the conductive layer 31 is a plated layer. The first example of the conductive member 90 can be formed, for example, by a plating method. The first electrode 20 is formed on the surface of the semiconductor structure 2 opposite to the semiconductor substrate 1 by a metal sputtering process, and the second electrode 22 is formed on the back surface of the semiconductor substrate 1 opposite to the semiconductor structure 2. Fig.45As shown in FIG. 1 , a resist pattern 41 is formed on the surface of the first electrode 20, where the portion where the recessed portion 80 is to be formed is covered with a resist. The portion shown between the dotted line 18a and the dotted line 18b and between the dotted line 18c and the dotted line 18d is the portion where the recessed portion 80 is to be formed. The conductive layer 31 is formed by a plating process on the surface of the first electrode 20 exposed from the opening of the resist pattern 41. By removing the resist pattern 41, as shown in FIG. Fig.46 As shown, a conductive component 90 adjacent to the setback portion 80 is formed on the surface of the first electrode 20. Compared with the two-layer plating method in the first example of the conductive component 90 in the first embodiment, the first example of the conductive component 90 in the sixth embodiment can reduce the plating process and can be easily manufactured, thereby improving mass productivity.

[0123] The first example of the conductive component 90 of the sixth embodiment is an example in which all of the two side surfaces facing each other in the x direction, that is, the main body side surface 97, are retreated toward the end surface side (front end surface 101 side, rear end surface 102 side) of the semiconductor structure 2 on the opposite side in the x direction. The conductive component 90 of the sixth embodiment may include the groove 60 described in the second embodiment, may include the terminal main body portion 85 described in the fifth embodiment, and may also cover the retreated portion 80 including the main body side surface 97 of the conductive component 90 with the adhesion preventing member 72 described in the third embodiment. Fig.47 , Fig.48 The second example of the semiconductor laser 100 and the semiconductor laser device 200 according to the sixth embodiment shown is an example in which the conductive member 90 includes the groove 60 . Fig.49 , Fig.50 The third example of the semiconductor laser 100 and the semiconductor laser device 200 according to the sixth embodiment shown is an example in which the adhesion preventing member 72 covers the recessed portion 80 . Fig.51 , Fig.52 , Fig.53 The fourth example of the semiconductor laser 100 and the semiconductor laser device 200 according to the sixth embodiment shown is an example in which the conductive member 90 includes the terminal body portion 85 .

[0124] exist Fig.47 , Fig.48 In the second example of the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment shown, the conductive component 90 has a groove 60 penetrating two side surfaces facing each other in the y direction. As in the first example of the conductive component 90 of the sixth embodiment described above, this is an example in which the recessed portion 80 and the groove 60 are formed by a single plating process. Fig.47 , Fig.48In the embodiment 2, the bottom surface of the groove 60 becomes the first electrode exposed portion 21 of the first electrode 20. The groove 60 is the range from the dotted line 15a to the dotted line 15b, and the range from the dotted line 15c to the dotted line 15d. In addition, as described in Embodiment 2, by combining with the etching process, the bottom surface of the groove 60 can be set as the bottom surface of the concave portion of the conductive layer 31. In this case, the first electrode 20 is not exposed at the groove 60. In addition, as described in Embodiment 2, Fig.24 , Fig.25 As shown, the number of the grooves 60 may be more than three, and the grooves 60 may extend in a direction inclined from the y direction. Fig.26 As shown, the groove 60 may be a groove that does not penetrate the two side surfaces of the conductive member 90 that are opposite to each other in the y direction, but extends from one side surface in the y direction to the other side surface in the y direction. The second example of the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment has the same effect as the semiconductor laser 100 and the semiconductor laser device 200 of the second embodiment because the conductive member 90 has the groove 60.

[0125] exist Fig.49 , Fig.50 In the third example of the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment shown, the adhesion preventing member 72 covers the receding portion 80. The adhesion preventing member 72 covers the first electrode exposed portion 21 and the main body side surface 97 of the receding portion 80 from the dotted line 18a to the dotted line 18b, and covers the first electrode exposed portion 21 and the main body side surface 97 of the receding portion 80 from the dotted line 18c to the dotted line 18d. The portion from the dotted line 16a to the dotted line 18b and the portion from the dotted line 16b to the dotted line 18c of the adhesion preventing member 72 are portions covering the main body side surface 97 of the receding portion 80. As with the semiconductor laser 100 and the semiconductor laser device 200 of the fourth embodiment, the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment may also combine the third example with the second example. The third example of the semiconductor laser 100 and the semiconductor laser device 200 according to the sixth embodiment has the same effects as those of the semiconductor laser 100 and the semiconductor laser device 200 according to the third embodiment because the adhesion preventing member 72 covers the recessed portion 80 .

[0126] Figure 51 to Figure 53In the fourth example of the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment shown, a terminal main body 85 is formed between two setback portions 80 in the y direction on the front end face 101 side, and a terminal main body 85 is formed between two setback portions 80 in the y direction on the rear end face 102 side. The portion between the dotted line 18b and the dotted line 18c is the main body 91. The portion between the dotted line 18a and the dotted line 18b and between the dotted line 18c and the dotted line 18d excluding the terminal main body 85 is the setback portion 80. The dotted lines 18a and 18d are dotted lines along the side surface of the first electrode 20 in the x direction and the side surface of the terminal main body 85, and the dotted lines 18b and 18c are dotted lines along the main body side surface 97 of the main body 91. In addition, although the main body 91 and the terminal main body 85 are distinguished, the thickness of the terminal main body 85 in the z direction is the same as that of the main body 91, and the terminal main body 85 can also be called a part of the main body 91. The fourth example of the semiconductor laser 100 according to the sixth embodiment is formed such that the conductive member 90 (the main body portion 91 including the terminal main body portion 85 ) includes the active layer 10 , that is, includes the surface side of the active layer 10 opposite to the semiconductor substrate 1 .

[0127] The length in the y direction of the setback portion 80 formed on the negative side in the y direction on the front end face 101 side and the length in the y direction of the setback portion 80 formed on the negative side in the y direction on the rear end face 102 side is the setback portion length Ls1. The length in the y direction of the setback portion 80 formed on the positive side in the y direction on the front end face 101 side and the length in the y direction of the setback portion 80 formed on the positive side in the y direction on the rear end face 102 side is the setback portion length Ls2. The length in the y direction of the setback portion 80 formed on the negative side in the y direction on the front end face 101 side is the length from the dotted line 17b to the side surface of the main body 91 on the negative side in the y direction, and the length in the y direction of the setback portion 80 formed on the negative side in the y direction on the rear end face 102 side is the length from the dotted line 17d to the side surface of the main body 91 on the negative side in the y direction. The length in the y direction of the retreat portion 80 formed on the positive side of the y direction on the front end face 101 side is the length from the dotted line 17a to the side surface of the main body 91 on the positive side of the y direction, and the length in the y direction of the retreat portion 80 formed on the positive side of the y direction on the rear end face 102 side is the length from the dotted line 17c to the side surface of the main body 91 on the positive side of the y direction.

[0128] The length of the two receding portions 80 formed on the front end face 101 side in the x direction is the same as the length of the end body portion 85 formed on the front end face 101 side in the x direction, that is, the end body portion length Ld1. The end body portion length Ld1 is also the length of the two receding portions 80 formed on the front end face 101 side. The length of the two receding portions 80 formed on the rear end face 102 side in the x direction is the same as the length of the end body portion 85 formed on the rear end face 102 side in the x direction, that is, the end body portion length Ld2. The end body portion length Ld2 is also the length of the two receding portions 80 formed on the rear end face 102 side. The length of the two receding portions 80 and the end body portion 85 formed on the front end face 101 side in the x direction is the length from the dotted line 18a to the dotted line 18b. The length of the two receding portions 80 and the end body portion 85 formed on the rear end face 102 side in the x direction is the length from the dotted line 18c to the dotted line 18d. The lengths Ls1 and Ls2 of the receding portion 80 in the y direction may be the same or different. The lengths Ld1 and Ld2 of the receding portion 80 and the terminal body portion 85 in the x direction may be the same or different.

[0129] In the fourth example of the conductive member 90 of the sixth embodiment, at least a portion of the two side surfaces facing each other in the x direction in the y direction perpendicular to the x direction and the z direction perpendicular to the semiconductor substrate 1, namely, the main body side surface 97, is retreated toward the end surface side (front end surface 101 side, rear end surface 102 side) on the opposite side in the x direction of the semiconductor structure 2. In the semiconductor laser 100 and the semiconductor laser device 200 including the fourth example of the conductive member 90 of the sixth embodiment, the retreated portion 80 does not penetrate the two side surfaces facing each other in the y direction of the conductive member 90.

[0130] Fig.51 The fourth example of the conductive member 90 of the sixth embodiment shown in FIG. 1 shows an example in which a total of four recessed portions 80 are formed on the front end surface 101 side and the rear end surface 102 side, but the number of the recessed portions 80 is not limited to four. Figure 39 to Figure 41 In this way, the number of the retreating parts 80 can also be one to three. Fig.39 , Fig.40 As shown, the example in which the setback portion 80 is formed only on the front end surface 101 side is different from Figure 7 The second example of the conductive member 90 of the first embodiment shown is similarly an example in which the setback portion 80 is formed only on one end face side. In the fourth example of the conductive member 90 of the sixth embodiment in which the setback portion 80 is formed only on one end face side, at least a portion of the side surface on the emission end face side (front end face 101 side) in the y direction perpendicular to the x direction and the z direction perpendicular to the semiconductor substrate 1, that is, the main body side surface 97, is set back toward the end face side (rear end face 102 side) on the opposite side of the semiconductor structure 2 in the x direction.

[0131] The fourth example of the semiconductor laser 100 and the semiconductor laser device 200 of the sixth embodiment has the same effect as the semiconductor laser 100 and the semiconductor laser device 200 of the fifth embodiment because the conductive component 90 (including the main body portion 91 of the end main body portion 85) includes the active layer 10, that is, the surface side of the active layer 10 opposite to the semiconductor substrate 1.

[0132] As described above, the semiconductor laser 100 of the sixth embodiment includes: a semiconductor substrate 1; a semiconductor structure 2 formed on the surface of the semiconductor substrate 1 and including an active layer 10 for generating light emitted from an emission end face (front end face 101); a surface electrode (first electrode 20) formed on the surface of the semiconductor structure 2 on the opposite side to the semiconductor substrate 1; and a conductive member 90 formed on the surface of the surface electrode (first electrode 20) on the opposite side to the semiconductor substrate 1. In the conductive member 90, a part or all of the side surface (body side surface 97) on the emission end face side (front end face 101 side) of one side surface in the x direction parallel to the extending direction in which the active layer 10 extends is formed on the other side surface (rear end face 102 side) opposite to the emission end face (front end face 101) in the semiconductor structure 2 in the x direction. The semiconductor laser 100 has a setback portion 80 formed by at least a portion (side surface 97 of the main body) of the conductive component 90 being set back from the emission end face (front end face 101) toward the other end face side (rear end face 102 side) in the x direction. The semiconductor laser 100 of Embodiment 6 has a setback portion 80 formed by at least a portion (side surface 97 of the main body) of the side surface of the emission end face side (front end face 101 side) of the conductive component 90 being set back from the emission end face (front end face 101) toward the other end face side (rear end face 102 side) in the x direction, thereby preventing the junction component 40 from spreading toward the light emission end face (front end face 101) when performing junction-down mounting.

[0133] The semiconductor laser device 200 of the sixth embodiment includes a semiconductor laser 100 and a submount 50 on which the semiconductor laser 100 is mounted, and a conductive member 90 of the semiconductor laser 100 is bonded to the submount 50 via a bonding member 40. The semiconductor laser 100 includes: a semiconductor substrate 1; a semiconductor structure 2 formed on the surface of the semiconductor substrate 1 and including an active layer 10 for generating light emitted from an emission end face (front end face 101); a surface electrode (first electrode 20) formed on the surface of the semiconductor structure 2 on the opposite side to the semiconductor substrate 1; and a conductive member 90 formed on the surface of the surface electrode (first electrode 20) on the opposite side to the semiconductor substrate 1. In the conductive member 90, a part or all (body side surface 97) of one side surface in the x direction parallel to the extending direction in which the active layer 10 extends, that is, the emission end face side (front end face 101 side), is formed at a position closer to the other end face side (rear end face 102 side) opposite to the emission end face (front end face 101) in the x direction than the emission end face (front end face 101) in the semiconductor structure 2. The semiconductor laser 100 is formed with a retreated portion 80 in which at least a part (body side surface 97) of the conductive member 90 retreats from the emission end face (front end face 101) to the other end face side (rear end face 102 side) in the x direction. The bonding member 40 is bonded to the two side surfaces of the conductive member 90 that are opposite to each other in the x direction at a position closer to the submount 50 side than the boundary between the surface electrode (first electrode 20) of the semiconductor laser 100 and the conductive member 90. The semiconductor laser device 200 of embodiment 6 is formed with a receding portion 80 through this structure in which at least a portion of the side surface (the main body side surface 97) of the emitting end face side (the front end face 101 side) of the conductive component 90 is retreated from the emitting end face (the front end face 101) toward the other end face side (the rear end face 102 side) in the x direction, thereby preventing the bonding component 40 from spreading toward the light emitting end face (the front end face 101) when the junction is installed downward.

[0134] Implementation 7

[0135] In the semiconductor laser 100 and the semiconductor laser device 200 of embodiments 1 to 4, an example is described in which the conductive component length Lc of the conductive component 90 is the same length as the length in the resonator direction of the semiconductor laser 100, that is, the laser length Lr, but the conductive component length Lc can also be shorter than the laser length Lr. Fig.54 is a cross-sectional view showing a semiconductor laser and a semiconductor laser device according to Embodiment 7, Fig.55 This is a perspective view of a semiconductor laser according to a seventh embodiment. Fig.56 yes Fig.55 Surface diagram of a semiconductor laser. Figure 54 to Figure 56, an example in which the conductive member length Lc of the conductive member 90 is shorter than the laser length Lr in the first example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment is shown. The parts different from the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment will be mainly described.

[0136] The semiconductor laser 100 and the semiconductor laser device 200 of the seventh embodiment are examples in which both side surfaces of the conductive member 90 in the x direction are all formed with a setback portion 80 set back from the front end face 101 and the rear end face 102 of the semiconductor structure 2 toward the other end face side in the x direction, and the conductive member 90 is also formed with a setback portion 80. Fig.56 As shown in the surface diagram of the semiconductor laser 100 shown in FIG. 1 , the first electrode exposed portion 21 as a part of the first electrode 20 is exposed to both ends in the x direction. The range from the dotted line 18a to the dotted line 18b and the range from the dotted line 18c to the dotted line 18d are the first electrode exposed portion 21 that exposes the first electrode 20. The range from the dotted line 18b to the dotted line 13b and the range from the dotted line 18c to the dotted line 13c are the extension 92 of the conductive component 90. The dotted line 18b is a dotted line of the extension side surface 98, which is a boundary formed by retreating along the side surface of the conductive component 90 on the positive side in the x direction to the opposite side surface, and the dotted line 18c is a dotted line of the extension side surface 98, which is a boundary formed by retreating along the side surface of the conductive component 90 on the negative side in the x direction to the opposite side surface. The dotted line 13b is a dotted line of the main body side surface 97, which is a boundary formed by the main body 91 on the positive side in the x direction of the conductive component 90 retreating to the opposite side, and the dotted line 13c is a dotted line of the main body side surface 97, which is a boundary formed by the main body 91 on the negative side in the x direction of the conductive component 90 retreating from the opposite side. Therefore, the range from the dotted line 18a to the dotted line 13b and the range from the dotted line 13c to the dotted line 18d are the retreated portion 80. The range from the dotted line 18b to the dotted line 13b and the range from the dotted line 13c to the dotted line 18c are the retreated portion 80 formed in the conductive component 90. Fig.56 Also shown are the length of the semiconductor laser 100 in the x direction, i.e., the laser length Lr, the length of the conductive component 90 in the x direction, i.e., the conductive component length Lc, and the length of the retreat portion 80 in the y direction, i.e., the retreat portion length Ls, which is equal to the length of the conductive component 90 in the y direction.

[0137] The conductive component 90 of the seventh embodiment has a setback portion 80 formed on the front end face 101 side and the rear end face 102 side of the semiconductor structure portion 2, and the conductive component length Lc is shorter than the length of the semiconductor laser 100 in the resonator direction, that is, the laser length Lr. Therefore, the semiconductor laser 100 of the seventh embodiment can expand the range of the setback portion 80 formed on the front end face 101 side and the rear end face 102 side of the semiconductor structure portion 2 compared with the first example of the semiconductor laser 100 of the first embodiment. Therefore, in the semiconductor laser 100 of the seventh embodiment, the bonding component 40 squeezed out from the main body 91 during the junction-down mounting is absorbed by the setback portion 80 more than the first example of the semiconductor laser 100 of the first embodiment, thereby improving the effect of preventing the bonding component 40 from spreading to the front end face 101 and the rear end face 102 compared with the first example of the semiconductor laser 100 of the first embodiment.

[0138] The conductive component 90 is, for example, a plated layer, and the conductive layers 31 and 32 are plated layers. The conductive component 90 can be formed, for example, by a two-layer plating method. The semiconductor structure 2 is formed on the semiconductor substrate 1, and the first electrode 20 is formed on the surface of the semiconductor structure 2 on the opposite side of the semiconductor substrate 1 by a metal sputtering process, and the second electrode 22 is formed on the back surface of the semiconductor substrate 1 on the opposite side of the semiconductor structure 2. A resist pattern is formed on the surface of the first electrode 20, in which a portion other than the portion where the conductive layer 31 is to be formed is covered with a resist. The portion shown between the dotted line 18a and the dotted line 18b, and between the dotted line 18c and the dotted line 18d is a portion where the conductive layer 31 is not formed, and is a portion where the first electrode exposed portion 21 of the first electrode 20 is exposed. The conductive layer 31 is formed on the surface of the first electrode 20 exposed from the opening of the resist pattern by a first plating process. Thereafter, a resist pattern is formed in which a portion where the receding portion 80 is to be formed is covered with a resist. The conductive layer 32 is formed by a second plating process on the surface of the conductive layer 31 exposed from the opening of the resist pattern. This method of performing multiple plating processes can be easily manufactured compared to the case of forming the receding portion 80 by etching, thereby improving mass productivity. In addition, when performing the first plating process, in order to facilitate the formation of the front end face 101 and the rear end face 102 by cleavage, it is preferable to cover the portion to be cleaved with a resist in advance without forming a plating layer.

[0139] The recessed portion 80 in the conductive component 90 can also be formed by etching. A resist pattern is formed on the surface of the first electrode 20, in which the portion other than the portion where the conductive layer 31 is to be formed is covered with a resist. The conductive layer 31 having a thickness of the main body height d1 is formed on the surface of the first electrode 20 exposed from the opening of the resist pattern by a plating process. A resist pattern is formed with an opening in the portion where the recessed portion 80 in the conductive component 90 is to be formed. That is, a resist pattern is formed with an opening between the dotted line 18b and the dotted line 13b, and between the dotted line 18c and the dotted line 13c. Thereafter, the conductive layer 31 is etched until the height from the surface of the main body 91 to the extension surface 96 of the extension 92 becomes Δd, thereby forming the conductive component 90.

[0140] exist Figure 54 to Figure 56 , an example in which the first example of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment is modified is described, but the conductive member 90 in which the conductive member length Lc is shorter than the laser length Lr can also be applied to the second and third examples of the semiconductor laser 100 and the semiconductor laser device 200 of the first embodiment, and can also be applied to the semiconductor lasers 100 and the semiconductor laser devices 200 of the second to fourth embodiments. By applying the conductive member 90 in which the conductive member length Lc is shorter than the laser length Lr, the range of the receding portion 80 formed on the front end face 101 side and the rear end face 102 side of the semiconductor structure portion 2 can be expanded compared with the example before application. Therefore, in the semiconductor laser 100 and the semiconductor laser device 200 that use the conductive component 90 whose conductive component length Lc is shorter than the laser length Lr, the joining component 40 squeezed out from the main body 91 during the junction-down installation can be absorbed by the receding portion 80 more than in the example before the application, thereby improving the effect of preventing the joining component 40 from spreading to the front end face 101 and the rear end face 102 compared with the example before the application.

[0141] In addition, the present application describes various illustrative embodiments and examples, but the various features, forms and functions described in one or more embodiments are not limited to the application of a specific embodiment, and can also be applied to the embodiments alone or in various combinations. Therefore, countless unillustrated variations can be imagined within the technical scope disclosed in the present specification. For example, it includes the case where at least one constituent element is deformed, added or omitted, and also includes the case where at least one constituent element is extracted and combined with constituent elements of other embodiments.

[0142] Description of Reference Numerals

[0143] 1...semiconductor substrate; 2...semiconductor structure; 10...active layer; 20...first electrode (surface electrode); 31...conductive layer; 32...conductive layer; 33...conductive layer; 40, 40a...joining part; 50...submount; 60...groove; 72...attachment hindering part; 80...recessed part; 90...conductive part; 91...main body; 92...extending part; 96, 96a, 96b...extending part surface; 97...side surface of main body; 100...semiconductor laser; 101...front end face; 102...rear end face; 200...semiconductor laser device; Δd...step height; Δg...groove depth.

Claims

1. A semiconductor laser comprising: a semiconductor substrate; a semiconductor structure formed on a surface of the semiconductor substrate and including an active layer for generating light emitted from an emission end face; a surface electrode formed on a surface of the semiconductor structure opposite to the semiconductor substrate; and a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate. in, In the conductive member, A part or all of a side surface in the x direction parallel to the extending direction in which the active layer extends, namely, a side surface on the emission end face side, is formed at a position closer to the other end face side in the x direction opposite to the emission end face in the semiconductor structure portion than the emission end face, The conductive member includes a retreated portion formed by retreating at least a portion of the conductive member from the emission end surface toward the other end surface side in the x direction, The conductive component comprises: Main body; and an extension portion, the extension portion being on the surface electrode side of the side surface on the emission end surface side of the main body portion and extending along the x direction in at least a portion of the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate, The recessed portion includes: a surface of the extension portion opposite to the semiconductor substrate, that is, a surface of the extension portion, and a side surface of the main body portion connected to the surface of the extension portion. A length of the conductive member in the x direction is shorter than a length of the semiconductor structure in the x direction.

2. The semiconductor laser according to claim 1, wherein The conductive member is formed so that the main body portion includes the active layer.

3. The semiconductor laser according to claim 1 or 2, wherein: The recessed portion penetrates two side surfaces that are opposed to each other in the y direction.

4. The semiconductor laser according to claim 1, wherein: The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

5. The semiconductor laser according to claim 1, wherein The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

6. The semiconductor laser according to claim 4 or 5, wherein: The depth of the groove in the z direction is different from the depth of the receding portion in the z direction.

7. The semiconductor laser according to claim 6, wherein: The conductive component is a plated layer, The recessed portion and the groove are recessed portions formed in the plating layer.

8. The semiconductor laser according to claim 1, wherein In the conductive member, All of the side surfaces on the emission end surface side are retracted toward the other end surface side in the x direction.

9. The semiconductor laser according to claim 1, wherein: In the conductive member, At least a portion of the side surface on the emission end surface side in the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate is retreated toward the other end surface side in the x direction.

10. The semiconductor laser according to claim 9, wherein The conductive member is formed to include the active layer.

11. The semiconductor laser according to claim 9 or 10, wherein: The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

12. The semiconductor laser according to claim 9 or 10, wherein: The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

13. The semiconductor laser according to any one of claims 1, 2, 4, 5, 7 to 10, wherein: The conductive component is a plated layer.

14. The semiconductor laser according to any one of claims 1, 2, 4, 5, 7 to 10, wherein: The recessed portion is provided with an adhesion preventing member which does not adhere to a bonding member used when bonding the semiconductor laser and the submount.

15. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to any one of claims 1 to 13, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is bonded to the two side surfaces of the conductive member that are opposed to each other in the x direction at a position closer to the submount than a boundary between the surface electrode of the semiconductor laser and the conductive member.

16. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to claim 14, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is not connected to the side surface of the conductive member in the x direction where the retreated portion of the adhesion preventing member is formed.

17. A semiconductor laser comprising: a semiconductor substrate; a semiconductor structure formed on a surface of the semiconductor substrate and including an active layer for generating light emitted from an emission end face; a surface electrode formed on a surface of the semiconductor structure opposite to the semiconductor substrate; and a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate. in, In the conductive member, A part or all of a side surface in the x direction parallel to the extending direction in which the active layer extends, namely, a side surface on the emission end face side, is formed at a position closer to the other end face side in the x direction opposite to the emission end face in the semiconductor structure portion than the emission end face, A part or all of the side surface on the other end surface side in the x direction is formed on the emission end surface side, A retreat portion is formed on the emission end surface side of the conductive member, in which at least a portion of the conductive member is retreated from the emission end surface toward the other end surface side in the x direction. A retreat portion is formed on the other end surface side of the conductive member in the x direction, wherein at least a portion of the conductive member is retreated from the other end surface in the x direction toward the emission end surface side. The conductive component comprises: Main body; and an extension portion, the extension portion being on the surface electrode side of two side surfaces of the main body portion that are opposite to each other in the x direction and extending along the x direction in at least a portion of a y direction that is perpendicular to both the x direction and a z direction perpendicular to the semiconductor substrate, The setback portion on the emission end face side and the setback portion on the other end face side in the x direction include: a surface of the extension portion opposite to the semiconductor substrate, that is, a surface of the extension portion, and a side surface of the main body portion connected to the surface of the extension portion. A length of the conductive member in the x direction is shorter than a length of the semiconductor structure in the x direction.

18. The semiconductor laser according to claim 17, wherein: The conductive member is formed so that the main body portion includes the active layer.

19. The semiconductor laser according to claim 17 or 18, wherein: The recessed portion penetrates two side surfaces that are opposed to each other in the y direction.

20. The semiconductor laser according to claim 17, wherein The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

21. The semiconductor laser according to claim 17, wherein: The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

22. The semiconductor laser according to claim 20 or 21, wherein: The depth of the groove in the z direction is different from the depth of the receding portion in the z direction.

23. The semiconductor laser according to claim 22, wherein: The conductive component is a plated layer, The recessed portion and the groove are recessed portions formed in the plating layer.

24. The semiconductor laser according to claim 17, wherein: In the conductive member, All of the two side surfaces that face each other in the x-direction are retreated toward the end surfaces of the semiconductor structure that are opposite to each other in the x-direction.

25. The semiconductor laser according to claim 17, wherein: In the conductive member, At least a portion of the two side surfaces opposing each other in the x direction in the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate is retreated toward the end surface side of the semiconductor structure opposite to the x direction.

26. The semiconductor laser according to claim 25, wherein The conductive member is formed to include the active layer.

27. The semiconductor laser according to claim 25 or 26, wherein: The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

28. The semiconductor laser according to claim 25 or 26, wherein: The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

29. The semiconductor laser according to any one of claims 17, 18, 20, 21, 23 to 26, wherein: The conductive component is a plated layer.

30. The semiconductor laser according to any one of claims 17, 18, 20, 21, 23 to 26, wherein: The recessed portion is provided with an adhesion preventing member which does not adhere to a bonding member used when bonding the semiconductor laser and the submount.

31. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to any one of claims 17 to 29, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is bonded to the two side surfaces of the conductive member that are opposed to each other in the x direction at a position closer to the submount than a boundary between the surface electrode of the semiconductor laser and the conductive member.

32. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to claim 30, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is not connected to the side surface of the conductive member in the x direction where the retreated portion of the adhesion preventing member is formed.

33. A semiconductor laser comprising: a semiconductor substrate; a semiconductor structure formed on a surface of the semiconductor substrate and including an active layer for generating light emitted from an emission end face; a surface electrode formed on a surface of the semiconductor structure opposite to the semiconductor substrate; and a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate. in, In the conductive member, A part or all of a side surface in the x direction parallel to the extending direction in which the active layer extends, namely, a side surface on the emission end face side, is formed at a position closer to the other end face side in the x direction opposite to the emission end face in the semiconductor structure portion than the emission end face, The conductive member includes a retreated portion formed by retreating at least a portion of the conductive member from the emission end surface toward the other end surface side in the x direction, The conductive component comprises: Main body; an extension portion, the extension portion being on the surface electrode side of the side surface of the main body on the emission end surface side and extending along the x direction in at least a portion of the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate; and a groove that penetrates two side surfaces that are opposite to each other in the y direction on the surface opposite to the semiconductor substrate, or extends from one side surface in the y direction to the other side surface in the y direction on the surface opposite to the semiconductor substrate, The recessed portion includes: a surface of the extension portion opposite to the semiconductor substrate, that is, a surface of the extension portion, and a side surface of the main body portion connected to the surface of the extension portion. The depth of the groove in the z direction is the same as the depth of the receding portion in the z direction.

34. The semiconductor laser according to claim 33, wherein The conductive member is formed so that the main body portion includes the active layer.

35. The semiconductor laser according to claim 33, wherein A length of the conductive member in the x direction is shorter than a length of the semiconductor structure in the x direction.

36. The semiconductor laser according to claim 33 or 34, wherein: The recessed portion penetrates two side surfaces that are opposed to each other in the y direction.

37. The semiconductor laser according to any one of claims 33 to 35, wherein: The conductive component comprises: A first plating layer constituting a layer extending from the back surface on the semiconductor substrate side to the surface of the extension portion of the receding portion and to the bottom surface of the groove on the semiconductor substrate side; and The second plating layer constitutes a layer extending from the surface of the extension portion and the bottom surface of the groove to the surface of the main body portion on the opposite side to the semiconductor substrate.

38. The semiconductor laser according to any one of claims 33 to 35, wherein: The conductive component is a plated layer, The recessed portion and the groove are recessed portions formed in the plating layer.

39. The semiconductor laser according to claim 33, wherein: In the conductive member, All of the side surfaces on the emission end surface side are retracted toward the other end surface side in the x direction.

40. The semiconductor laser according to claim 33, wherein: In the conductive member, At least a portion of the side surface on the emission end surface side in the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate is retreated toward the other end surface side in the x direction.

41. The semiconductor laser according to claim 40, wherein The conductive member is formed to include the active layer.

42. The semiconductor laser according to claim 40 or 41, wherein: The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

43. The semiconductor laser according to claim 40 or 41, wherein: The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

44. The semiconductor laser according to any one of claims 33 to 35 and 39 to 41, wherein: The conductive component is a plated layer.

45. The semiconductor laser according to any one of claims 33 to 35 and 39 to 41, wherein: The recessed portion is provided with an adhesion preventing member which does not adhere to a bonding member used when bonding the semiconductor laser and the submount.

46. ​​A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to any one of claims 33 to 44, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is bonded to the two side surfaces of the conductive member that are opposed to each other in the x direction at a position closer to the submount than a boundary between the surface electrode of the semiconductor laser and the conductive member.

47. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to claim 45, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is not connected to the side surface of the conductive member in the x direction where the retreated portion of the adhesion preventing member is formed.

48. A semiconductor laser comprising: a semiconductor substrate; a semiconductor structure formed on a surface of the semiconductor substrate and including an active layer for generating light emitted from an emission end face; a surface electrode formed on a surface of the semiconductor structure opposite to the semiconductor substrate; and a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate. in, In the conductive member, A part or all of a side surface in the x direction parallel to the extending direction in which the active layer extends, namely, a side surface on the emission end face side, is formed at a position closer to the other end face side in the x direction opposite to the emission end face in the semiconductor structure portion than the emission end face, A part or all of the side surface on the other end surface side in the x direction is formed on the emission end surface side, A retreat portion is formed on the emission end surface side of the conductive member, in which at least a portion of the conductive member is retreated from the emission end surface toward the other end surface side in the x direction. A retreat portion is formed on the other end surface side of the conductive member in the x direction, wherein at least a portion of the conductive member is retreated from the other end surface in the x direction toward the emission end surface side. The conductive component comprises: Main body; an extension portion, the extension portion being on the surface electrode side of two side surfaces of the main body portion that are opposite to each other in the x direction and extending along the x direction in at least a portion of a y direction that is perpendicular to both the x direction and a z direction perpendicular to the semiconductor substrate; and a groove that penetrates two side surfaces that are opposite to each other in the y direction on the surface opposite to the semiconductor substrate, or extends from one side surface in the y direction to the other side surface in the y direction on the surface opposite to the semiconductor substrate, The setback portion on the emission end face side and the setback portion on the other end face side in the x direction include: a surface of the extension portion opposite to the semiconductor substrate, that is, a surface of the extension portion, and a side surface of the main body portion connected to the surface of the extension portion. The depth of the groove in the z direction is the same as the depth of the receding portion in the z direction.

49. The semiconductor laser according to claim 48, wherein The conductive member is formed so that the main body portion includes the active layer.

50. The semiconductor laser according to claim 48, wherein A length of the conductive member in the x direction is shorter than a length of the semiconductor structure in the x direction.

51. The semiconductor laser according to claim 48 or 49, wherein: The recessed portion penetrates two side surfaces that are opposed to each other in the y direction.

52. The semiconductor laser according to any one of claims 48 to 50, wherein: The conductive component comprises: A first plating layer constituting a layer extending from the back surface on the semiconductor substrate side to the surface of the extension portion of the receding portion and to the bottom surface of the groove on the semiconductor substrate side; and The second plating layer constitutes a layer extending from the surface of the extension portion and the bottom surface of the groove to the surface of the main body portion on the opposite side to the semiconductor substrate.

53. The semiconductor laser according to any one of claims 48 to 50, wherein: The conductive component is a plated layer, The recessed portion and the groove are recessed portions formed in the plating layer.

54. The semiconductor laser of claim 48, wherein: In the conductive member, All of the two side surfaces that face each other in the x-direction are retreated toward the end surfaces of the semiconductor structure that are opposite to each other in the x-direction.

55. The semiconductor laser of claim 48, wherein: In the conductive member, At least a portion of the two side surfaces opposing each other in the x direction in the y direction perpendicular to both the x direction and the z direction perpendicular to the semiconductor substrate is retreated toward the end surface side of the semiconductor structure opposite to the x direction.

56. The semiconductor laser of claim 55, wherein: The conductive member is formed to include the active layer.

57. A semiconductor laser according to claim 55 or 56, wherein: The conductive member includes a groove penetrating two side surfaces facing each other in the y direction on a surface opposite to the semiconductor substrate.

58. The semiconductor laser according to claim 55 or 56, wherein: The conductive member includes a groove extending from one side surface in the y direction to the other side surface in the y direction on a surface opposite to the semiconductor substrate.

59. The semiconductor laser according to any one of claims 48 to 50 and 54 to 56, wherein: The conductive component is a plated layer.

60. The semiconductor laser according to any one of claims 48 to 50 and 54 to 56, wherein: The recessed portion is provided with an adhesion preventing member which does not adhere to a bonding member used when bonding the semiconductor laser and the submount.

61. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to any one of claims 48 to 59, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is bonded to the two side surfaces of the conductive member that are opposed to each other in the x direction at a position closer to the submount than a boundary between the surface electrode of the semiconductor laser and the conductive member.

62. A semiconductor laser device, wherein: The semiconductor laser device comprises: the semiconductor laser according to claim 60, and a submount on which the semiconductor laser is mounted. The conductive member of the semiconductor laser is bonded to the submount via a bonding member. The bonding member is not connected to the side surface of the conductive member in the x direction where the retreated portion of the adhesion preventing member is formed.

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