Weakened structure and method of making, transfer method of light emitting device

Abstract

This invention relates to a weakened structure and its fabrication method, as well as a method for transferring a light-emitting device. The fabrication method of the weakened structure includes: providing a temporary substrate; forming a first adhesive layer on the temporary substrate; forming a support member on the first adhesive layer; and connecting a light-emitting device to the sidewall of the support member, with the light-emitting device and the first adhesive layer having a gap distance. By fabricating a weakened structure with a first adhesive layer on the temporary substrate, a support member on the first adhesive layer, and a light-emitting device connected to the sidewall of the support member, when the light-emitting device is transferred, the support member can be separated from the first adhesive layer, and the support member can carry the light-emitting device from the first adhesive layer to a circuit backplane. The weakened structure has a simple structure and can be fabricated through a simple process, achieving high yield. Furthermore, the formed weakened structure is structurally stable, ensuring the yield of subsequent light-emitting device transfer operations.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a weakened structure and its fabrication method, and a method for transferring light-emitting devices. Background Technology

[0002] Because light-emitting diodes (LEDs) have advantages such as energy saving, environmental friendliness, and long lifespan, they will replace traditional lighting fixtures such as incandescent and fluorescent lamps in the future and enter thousands of households. Micro light-emitting diodes (Micro LEDs) are a new type of display technology with advantages such as high brightness, low latency, long lifespan, wide viewing angle, and high contrast, and represent the current development direction of LEDs.

[0003] The key technology for miniature light-emitting diodes is mass transfer technology. One type of mass transfer technology requires the development of weakened structures. However, the weakened structures currently available on the market are complex, have low process yields, and are unstable, resulting in low yields for subsequent transfer operations.

[0004] Therefore, how to provide a weakened structure that is simple in structure and can achieve high yield is an urgent problem to be solved. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this invention is to provide a weakened structure and its fabrication method, as well as a method for transferring light-emitting devices, aiming to solve the problem of how to provide a weakened structure with a simple structure and high yield.

[0006] A method for fabricating a weakened structure includes: providing a temporary substrate; forming a first adhesive layer on the temporary substrate; forming a support member on the first adhesive layer; and connecting a light-emitting device to a sidewall of the support member, wherein the light-emitting device has a gap distance from the first adhesive layer.

[0007] By fabricating a first adhesive layer on a temporary substrate, a support member is placed on the first adhesive layer, and a weakening structure for the light-emitting device is connected through the sidewall of the support member. When the light-emitting device is transferred, the support member can be separated from the first adhesive layer and transferred to the circuit backplane with the light-emitting device. The weakening structure has a simple structure and can be fabricated through a simple process, achieving high yield. Furthermore, the formed weakening structure is stable, ensuring the yield of subsequent light-emitting device transfer operations.

[0008] Optionally, an adhesive element is placed around the light-emitting device, and the adhesive element is connected to the support element. The adhesive element surrounding the light-emitting device serves two purposes: firstly, it protects the device; secondly, the connection between the light-emitting device and the support element, via the adhesive element, ensures a more secure connection.

[0009] Optionally, a second adhesive layer is formed on the growth substrate on which the light-emitting device is grown, the second adhesive layer surrounding the light-emitting device; the first adhesive layer and the second adhesive layer are connected; the growth substrate is peeled off; the second adhesive layer is patterned so that a portion of the second adhesive layer is removed, and the remaining portion forms the adhesive component. The above-described weakened structure fabrication process is simple, easy to manufacture, and facilitates increased productivity. The resulting weakened structure is stable and allows for convenient subsequent transfer of the light-emitting device.

[0010] Optionally, a sacrificial layer is formed on the second adhesive layer; the first adhesive layer is connected to the sacrificial layer; the sacrificial layer is patterned so that it connects the first adhesive layer and the adhesive element. When the sacrificial element is not removed, it serves to isolate the first and second adhesive layers, creating a gap between the light-emitting device and the first adhesive layer. This facilitates subsequent removal of the sacrificial element, as the space occupied by the sacrificial element directly forms the gap between the light-emitting device and the first adhesive layer.

[0011] Optionally, a support layer is formed, surrounding the adhesive component and connected to the first adhesive layer. The support layer is connected to the first adhesive layer, and together they form a complete enclosure of the light-emitting device, the adhesive component, and the sacrificial component.

[0012] Optionally, the support layer can be patterned to form the support member. This process is simple and can create a structure where the light-emitting device is connected to the sidewall of the support member via an adhesive.

[0013] Optionally, the sacrificial layer can be removed. After removing the sacrificial layer, the light-emitting device is spaced apart from the first adhesive layer and has no direct connection, and is fixed to the first adhesive layer by a support member.

[0014] Optionally, when forming the second adhesive layer, the electrodes of the light-emitting device are exposed. This allows the electrodes of the light-emitting device to bond with the pads on the circuit backplane during subsequent transfer of the light-emitting device to the circuit backplane.

[0015] Based on the same inventive concept, the present invention also provides a weakened structure, including a temporary substrate, a first adhesive layer, a support member, and a light-emitting device. The first adhesive layer is formed on the temporary substrate, the support member is formed on the first adhesive layer, the light-emitting device is connected to the sidewall of the support member, and the light-emitting device is spaced apart from the first adhesive layer.

[0016] By setting a support on the first adhesive layer and connecting the light-emitting device to the weakened structure through the sidewall of the support, when the light-emitting device is transferred, the support and the light-emitting device only need to be separated from the first adhesive layer to be transferred to the circuit backplane. The weakened structure has a simple structure and can be formed through a simple process, which can achieve high yield. Moreover, the structure of the weakened structure is stable, which can ensure the yield of subsequent light-emitting device transfer operations.

[0017] Based on the same inventive concept, the present invention also provides a method for transferring a light-emitting device, comprising: providing a weakened structure manufactured by the method for manufacturing a weakened structure as described in any of the foregoing embodiments; using a transfer structure to separate the support member on the weakened structure from the first adhesive layer, and transferring the light-emitting device connected to the support member to a circuit backplane.

[0018] By employing the weakened structure of the present invention, during the transfer of the light-emitting device, the support member is separated from the first adhesive layer, and the support member can carry the light-emitting device from the first adhesive layer to the circuit backplane. The weakened structure has a simple structure and can be fabricated through a simple process, achieving high-yield fabrication. Furthermore, the formed weakened structure is structurally stable, ensuring the yield of the light-emitting device transfer operation. Attached Figure Description

[0019] Figure 1 A flowchart illustrating a method for fabricating a weakened structure according to one embodiment;

[0020] Figure 2 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0021] Figure 3 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0022] Figure 4 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0023] Figure 5 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0024] Figure 6 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0025] Figure 7 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0026] Figure 8This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0027] Figure 9 This is a schematic diagram of a step in a method for fabricating a weakened structure according to an embodiment.

[0028] Figure 10 This is a schematic diagram of a weakened structure according to one embodiment.

[0029] Explanation of reference numerals in the attached figures:

[0030] 10 - Growth substrate;

[0031] 20 - Light-emitting device, 21 - Epitaxial crystal, 22 - First electrode, 23 - Second electrode;

[0032] 30 - Temporary substrate;

[0033] 40 - First adhesive layer;

[0034] 50 - Second adhesive layer; 51 - Adhesive component;

[0035] 60 - Sacrificial layer, 61 - Sacrificial component;

[0036] 70 - Support layer, 71 - Support component. Detailed Implementation

[0037] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of the invention.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0039] The key technology for miniature light-emitting diodes is mass transfer technology. One type of mass transfer technology requires the development of weakened structures. However, the weakened structures currently available on the market are complex, have low process yields, and are unstable, resulting in low yields for subsequent transfer operations.

[0040] Therefore, how to provide a weakened structure that is simple in structure and can achieve high yield is an urgent problem to be solved.

[0041] Based on this, the present invention aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0042] Please refer to Figure 1 and Figure 10 This invention provides a method for manufacturing a weakened structure, including steps S10-S30.

[0043] S10. Provide a temporary substrate 30 and form a first adhesive layer 40 on the temporary substrate 30;

[0044] S20. A support member 71 is formed on the first adhesive layer 40;

[0045] S30. A light-emitting device 20 is connected to the side wall of the support 71, and the light-emitting device 20 has a gap distance from the first adhesive layer 40.

[0046] Specifically, the temporary substrate 30 can be made of materials such as sapphire, silicon carbide, or silicon, and serves as a support for the overall structure. The process of forming the first adhesive layer 40 on the temporary substrate 30 can be spin-coating. The first adhesive layer 40 can be a BCB (benzocyclobutene) adhesive, used to bond and fix other structures. The support member 71 can be an inorganic material, such as SiO2 (silicon dioxide), SiNx (silicon nitride), or Al2O3 (aluminum oxide), or an organic material. The support member 71 protrudes relative to the first adhesive layer 40 and includes two opposing sidewalls. The light-emitting device 20 is connected to one of these sidewalls. The spacing between the two sidewalls of the support member 71 is its thickness, which can be 1μm-10μm, specifically 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, or 10μm.

[0047] The light-emitting device 20 may specifically be a micro light-emitting diode (MicroLED), which includes an epitaxial wafer 21, a first electrode 22, and a second electrode 23, with the first electrode 22 and the second electrode 23 connected to the epitaxial wafer 21. The epitaxial wafer 21 may specifically include a stacked N-type semiconductor layer, an active layer, a P-type semiconductor layer, and other layer structures, which can be fabricated through an epitaxial growth process. The first electrode 22 may be an N-type electrode, which is connected to the N-type semiconductor layer, and the second electrode 23 may be a P-type electrode, which is connected to the P-type semiconductor layer.

[0048] When the light-emitting device 20 is connected to the sidewall of the support member 71, the side of the epitaxial wafer 21 is connected to the sidewall of the support member 71, while the first electrode 22 and the second electrode 23 are suspended without being connected to the support member 71. The light-emitting device 20 is supported and fixed on the temporary substrate 30 and the first adhesive layer 40 by the support member 71.

[0049] Optionally, a support member 71 is connected to one side of the light-emitting device 20. This allows the light-emitting device 20 to be fixed to the first adhesive layer 40 by the support member 71. On the other hand, the center of gravity of the light-emitting device 20 and the support member 71 is not on a straight line perpendicular to the first adhesive layer 40, making the support member 71 easier to separate and facilitating subsequent transfer.

[0050] Optionally, support members 71 are connected to at least two sides of the light-emitting device 20. For example, support members 71 are connected to opposite sides of the light-emitting device 20. This allows the light-emitting device 20 to be connected to the first adhesive layer 40 through two support members 71. The connection is stable and not easy to shift. When transferring it later, a slightly larger force is required to separate the two support members 71 from the first adhesive layer 40.

[0051] Optionally, multiple support members 71 and multiple light-emitting devices 20 can be simultaneously disposed on the first adhesive layer 40, with each light-emitting device 20 and support member 71 connected in a one-to-one correspondence. The multiple support members 71 can be arranged in an array, and the multiple light-emitting devices 20 can be of the same type or different types. For example, the multiple light-emitting devices 20 can all emit the same color, such as red LEDs (R), green LEDs (G), or blue LEDs (B); the multiple light-emitting devices 20 can also emit different colors of light, for example, the multiple light-emitting devices 20 can be arranged on the first adhesive layer 40 in the order RGBRGB…

[0052] The process of forming the support 71 on the first adhesive layer 40 can be any feasible process, and some embodiments are described in the following content, which will not be elaborated here.

[0053] The process of connecting the light-emitting device 20 to the side wall of the support 71 can adopt any feasible process. Some embodiments are described in the following content, and will not be elaborated here.

[0054] The order of steps S20 and S30 in the process can be set as needed. S20 can be performed first and then S30, or S20 and S30 can be performed simultaneously, or S30 can be performed first and then S20.

[0055] By fabricating a first adhesive layer 40 on a temporary substrate 30, a support member 71 is provided on the first adhesive layer 40, and a weakening structure of the light-emitting device 20 is connected through the sidewall of the support member 71. When the light-emitting device 20 is transferred, the support member 71 can be separated from the first adhesive layer 40, and the support member 71 can carry the light-emitting device 20 from the first adhesive layer 40 to the circuit backplane. The weakening structure has a simple structure and can be fabricated through a simple process, which can achieve high yield. Moreover, the structure of the formed weakening structure is stable, which can ensure the yield of the subsequent transfer operation of the light-emitting device 20.

[0056] In one embodiment, please refer to Figure 10 The method for manufacturing the weakened structure also includes: surrounding the light-emitting device 20 with the adhesive 51 and connecting the adhesive 51 to the support 71.

[0057] Specifically, the adhesive 51 can be a BCB (benzocyclobutene) adhesive. The process of surrounding the light-emitting device 20 with the adhesive 51 can employ any feasible process; some embodiments are described later and will not be elaborated upon here. The adhesive 51 surrounds the light-emitting device 20, providing protection for it. Furthermore, the connection between the light-emitting device 20 and the support member 71 via the adhesive 51 ensures a more secure connection.

[0058] The following describes the specific manufacturing process of one embodiment of the weakened structure.

[0059] Please refer to Figure 2 A light-emitting device 20 is grown on a growth substrate 10. Specifically, the growth substrate 10 can be made of materials such as sapphire, silicon carbide, or silicon. The process for growing the light-emitting device 20 can be epitaxial growth, and can be fabricated using processes such as evaporation, deposition, photolithography, and etching. Specific details can be found in existing technologies and will not be elaborated further in this application. It should be understood that the epitaxial layer 21 of the light-emitting device 20 is grown on the growth substrate 10, and the first electrode 22 and the second electrode 23 are formed on the side of the epitaxial layer 21 facing away from the growth substrate 10. The surface of the epitaxial layer 21 in contact with the growth substrate 10 is the light-emitting surface of the light-emitting device 20. In this embodiment, multiple arrayed light-emitting devices 20 can be grown on the growth substrate 10. The multiple light-emitting devices 20 can be the same or different, as described above. The overall structure with multiple light-emitting devices 20 formed on the growth substrate 10 is referred to in the industry as a COW (chip on wafer, unthinned and uncut chip) chip.

[0060] Please refer to Figure 3 A first adhesive layer 40 is formed on the temporary substrate 30 for later use. For details regarding the temporary substrate 30 and the first adhesive layer 40, please refer to the foregoing description; they will not be repeated here.

[0061] Please refer to Figure 4A second adhesive layer 50 is formed on the growth substrate 10 on which the light-emitting device 20 is grown, surrounding the light-emitting device 20. Specifically, the second adhesive layer 50 can be a BCB (benzocyclobutene) adhesive. The second adhesive layer 50 is formed on the growth substrate 10 by a spin-coating process, surrounding and connecting the light-emitting device 20. The thickness of the second adhesive layer 50 is greater than or equal to the height of the epitaxial wafer 21, and less than the total height of the epitaxial wafer 21 and the electrodes (i.e., the first electrode 22 or the second electrode 23). This ensures that after the formation of the second adhesive layer 50, at least part of the electrodes of the light-emitting device 20 are exposed, so that when the light-emitting device 20 is subsequently transferred to the circuit backplane, the electrodes of the light-emitting device 20 can bond to the pads on the circuit backplane.

[0062] Optional, please continue to refer to Figure 4 A sacrificial layer 60 is formed on the second adhesive layer 50. The sacrificial layer 60 can be a metallic material, specifically aluminum, copper, or their alloys. The sacrificial layer 60 can be easily removed by reacting with acidic liquids. The process for forming the sacrificial layer 60 can be vapor deposition, deposition, etc., and there are no specific limitations. Figure 9 and Figure 10 The formation of the sacrificial layer 60 allows for the subsequent removal of the sacrificial layer 60 to create a gap between the light-emitting device 20 and the first adhesive layer 40, making it easier to transfer the light-emitting device 20.

[0063] Please refer to Figure 5 The first adhesive layer 40 and the second adhesive layer 50 are connected. Since both the first adhesive layer 40 and the second adhesive layer 50 are adhesive, when they are connected to each other, the first adhesive layer 40 and the second adhesive layer 50 can be connected and fixed by adhesive.

[0064] Optionally, when a sacrificial layer 60 is formed on the second adhesive layer 50, the first adhesive layer 40 is connected to the sacrificial layer 60. Since the first adhesive layer 40 is adhesive, the first adhesive layer 40 and the sacrificial layer 60 can also be connected and fixed by adhesive.

[0065] Please refer to Figure 6 The growth substrate 10 is then peeled off. The process for peeling off the growth substrate 10 can be laser lift-off (LLO).

[0066] Please refer to Figure 6 and Figure 7The second adhesive layer 50 is patterned so that a portion of the second adhesive layer 50 is removed, and the remaining portion forms the adhesive component 51. Specifically, the removal process of the second adhesive layer 50 can be photolithography. More specifically, a photoresist layer can be coated on the second adhesive layer 50, exposed using a photolithography process, and then partially removed by development, defining the pattern of the etched area. The photoresist layer can be made using either positive or negative photoresist. Then, according to the pattern defined by the photoresist layer, the second adhesive layer 50 is etched, achieving the effect of removing some parts of the second adhesive layer 50 while retaining others. The etching process can specifically be ICP etching (inductively coupled plasma etching).

[0067] The etched adhesive 51 surrounds the light-emitting device 20 on all surfaces except the light-emitting surface, thus protecting the light-emitting device 20 without obstructing the light-emitting surface.

[0068] Optional, please continue to refer to Figure 6 and Figure 7 When the sacrificial layer 60 is formed, a portion of the sacrificial layer 60 is simultaneously etched away during the patterning etching of the second adhesive layer 50, while a portion of the sacrificial layer 60 is retained. The retained portion forms a sacrificial element 61, which connects the first adhesive layer 40 and the adhesive element 51. When the sacrificial element 61 is not removed, it serves to isolate the first adhesive layer 40 and the second adhesive layer 50, creating a gap between the light-emitting device 20 and the first adhesive layer 40. This facilitates the subsequent removal of the sacrificial element 61, as the space occupied by the sacrificial element 61 directly forms the gap between the light-emitting device 20 and the first adhesive layer 40.

[0069] Please refer to Figure 7 and Figure 8 A support layer 70 is formed, surrounding the adhesive component 51 and connected to the first adhesive layer 40. Specifically, the support layer 70 can be fabricated using a deposition process, and the material of the support layer 70 is the same as that of the aforementioned support component 71, which will not be described again. When the support layer 70 surrounds the adhesive component 51, it covers the light-emitting surface of the light-emitting device 20. Simultaneously, the support layer 70 surrounds all surfaces of the epitaxial wafer 21 except for the light-emitting surface and the electrode side, and connects to the adhesive component 51 at these other surfaces. The support layer 70 is connected to the first adhesive layer 40, and together they form a complete enclosure of the light-emitting device 20, the adhesive component 51, and the sacrificial component 61.

[0070] Please refer to Figure 8 and Figure 9A patterned support layer 70 is formed to create a support member 71. Specifically, the patterned support layer 70 can also be created using the aforementioned photolithography and etching processes, which will not be elaborated upon here. After patterning the support layer 70, a portion of the support layer 70 is removed, and the remaining portion forms the support member 71. The removed portion includes most of the light-emitting surface of the light-emitting device 20 and portions of three of the four sides, such that the support member 71 includes one side of the light-emitting device 20, or possibly a small portion of the light-emitting surface of the light-emitting device 20. In other words, with the above configuration, the process is simple, and a structure can be formed where the light-emitting device 20 is connected to the sidewall of the support member 71 via the adhesive 51.

[0071] Please refer to Figure 9 and Figure 10 The sacrificial layer 60 is removed. The specific process for removing the sacrificial layer 60 can be etching, as well as acid washing, as described above. After removing the sacrificial layer 60, the light-emitting device 20 and the first adhesive layer 40 are spaced apart and not directly connected; the device 20 is fixed to the first adhesive layer 40 by the support member 71.

[0072] The above-described weakened structure manufacturing process is simple and easy to carry out, which can improve productivity. The resulting weakened structure is stable and can facilitate the subsequent transfer of the light-emitting device 20.

[0073] Optional, please refer to Figure 9 and Figure 10 In the embodiment without the sacrificial member 61, in the final weakened structure, the electrode of the light-emitting device 20 can be directly connected to the first adhesive layer 40. At this time, the light-emitting device 20 is connected to the first adhesive layer 40 through its own electrode and also to the first adhesive layer 40 through the support member 71. The structure is more stable. When the light-emitting device 20 is transferred later, only a larger force needs to be applied to separate the electrode of the light-emitting device 20 from the first adhesive layer 40, and at the same time, the support member 71 separates from the first adhesive layer 40.

[0074] Optional, please refer to Figure 10 In embodiments where the light-emitting device 20 is not surrounded by the adhesive 51, the connection between the light-emitting device 20 and the support 71 can be made in other ways. For example, a groove is opened on the side wall of the support 71, and the light-emitting device 20 extends into the groove to fix the light-emitting device 20; or, adhesive is provided on the support 71, and the light-emitting device 20 is glued to the adhesive, etc., without limitation.

[0075] Please refer to Figure 10The present invention also provides a weakening structure, including a temporary substrate 30, a first adhesive layer 40, a support member 71 and a light-emitting device 20. The first adhesive layer 40 is formed on the temporary substrate 30, the support member 71 is formed on the first adhesive layer 40, the light-emitting device 20 is connected to the side wall of the support member 71, and the light-emitting device 20 and the first adhesive layer 40 are spaced apart.

[0076] For details regarding the structures mentioned above, please refer to the foregoing explanation; they will not be repeated here.

[0077] By providing a support member 71 on the first adhesive layer 40 and connecting the weakened structure of the light-emitting device 20 through the sidewall of the support member 71, the weakened structure is used for the transfer of the light-emitting device 20. By separating the support member 71 from the first adhesive layer 40, the support member 71 can carry the light-emitting device 20 from the first adhesive layer 40 to the circuit backplane. The weakened structure has a simple structure and can be formed through a simple process, which can achieve high yield. Moreover, the structure of the formed weakened structure is stable, which can ensure the yield of the subsequent transfer operation of the light-emitting device 20.

[0078] Please refer to Figure 10 The present invention also provides a method for transferring a light-emitting device 20, comprising:

[0079] The invention provides a weakened structure fabricated using the method described in the foregoing embodiments of the invention.

[0080] A transfer structure is used to separate the support 71 on the weakened structure from the first adhesive layer 40, and to transfer the light-emitting device 20 connected to the support 71 to the circuit backplane.

[0081] Specifically, the transfer structure is movable. The transfer head first moves to connect and fix with the support member 71, which can be done by vacuum adsorption, bonding, magnetic attraction, or other methods. Then, the transfer structure moves, causing the support member 71 to separate from the first adhesive layer 40, thereby separating the light-emitting device 20 from the temporary substrate 30. In one embodiment, the end face of the support member 71 is debonded from the first adhesive layer 40, leaving no residue of the support member 71 on the first adhesive layer 40 after separation. In another embodiment, the support member 71 breaks in the middle, with part of the support member 71 carrying the first adhesive layer 40 during the transfer, while the remaining part remains on the first adhesive layer 40. Afterward, the transfer structure moves again to bond the electrodes of the light-emitting device 20 to the pads on the circuit backplane, thus completing the transfer of the light-emitting device 20.

[0082] In an embodiment where multiple light-emitting devices 20 are disposed on a temporary substrate 30, the transfer structure can transfer the light-emitting devices 20 in batches, achieving mass transfer.

[0083] The method for transferring the light-emitting device 20 of the present invention employs the weakened structure of the present invention. When transferring the light-emitting device 20, the support member 71 is separated from the first adhesive layer 40, and the support member 71 can carry the light-emitting device 20 from the first adhesive layer 40 to the circuit backplane. The weakened structure has a simple structure and can be fabricated through a simple process, achieving high-yield fabrication. Furthermore, the structure of the formed weakened structure is stable, ensuring the yield of the transfer operation of the light-emitting device 20.

[0084] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for manufacturing a weakened structure, characterized in that, include: A sacrificial layer is formed on the light-emitting device on the growth substrate to cover the electrodes of the light-emitting device; A temporary substrate is provided, and a first adhesive layer is formed on the temporary substrate; The light-emitting device is adhered to the first adhesive layer, with the electrodes of the light-emitting device facing the first adhesive layer, so as to connect the first adhesive layer to the sacrificial layer; Remove the growth substrate; A support is formed on the first adhesive layer for unadhesion from the first adhesive layer during transfer; A light-emitting device is connected to the side wall of the support member; Remove the sacrificial layer so that the light-emitting device has a gap between it and the first adhesive layer.

2. The method for manufacturing the weakened structure as described in claim 1, characterized in that, An adhesive element is placed around the light-emitting device, and the adhesive element is then connected to the support element.

3. The method for fabricating the weakened structure as described in claim 1, characterized in that, Before forming a sacrificial layer on the light-emitting device on the growth substrate to cover the electrodes of the light-emitting device, the following steps are performed: A second adhesive layer is formed on the growth substrate on which the light-emitting device is grown, and the second adhesive layer surrounds the light-emitting device.

4. The method for manufacturing the weakened structure as described in claim 3, characterized in that, After removing the growth substrate, the following steps are performed: The sacrificial layer and the second adhesive layer are patterned, and the remaining portions form a sacrificial member and an adhesive member, so that the sacrificial member connects the first adhesive layer and the adhesive member.

5. The method for fabricating the weakened structure as described in claim 4, characterized in that, The step of forming a support on the first adhesive layer for unadhesion from the first adhesive layer during transfer includes performing the following steps: A support layer is formed, which surrounds the adhesive and the sacrificial member, and is connected to the first adhesive layer; The support layer is patterned to form the support member.

6. The method for manufacturing the weakened structure as described in claim 5, characterized in that, The support includes one side portion of the light-emitting device.

7. The method for manufacturing the weakened structure as described in claim 3, characterized in that, When the second adhesive layer is formed, the electrodes of the light-emitting device are exposed.

8. A weakening structure, fabricated using the method for manufacturing a weakening structure as described in any one of claims 1 to 7, characterized in that, The device includes a temporary substrate, a first adhesive layer, a support member, and a light-emitting device. The support member is used to detach from the first adhesive layer during transfer. The first adhesive layer is formed on the temporary substrate, and the support member is formed on the first adhesive layer. The light-emitting device is connected to the sidewall of the support member, and the light-emitting device is spaced apart from the first adhesive layer.

9. A method for transferring light-emitting devices, characterized in that, A weakened structure manufactured by the method for manufacturing a weakened structure as described in any one of claims 1 to 7 is provided; A transfer structure is used to separate the support on the weakened structure from the first adhesive layer, and the light-emitting device connected to the support is transferred to the circuit backplane.

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