A reaction chamber

Abstract

The present application relates to the field of semiconductor technology, and discloses a reaction chamber, including a chamber and a heating device located in the chamber, wherein the heating device includes a carrier, a heating module, a lifting assembly, and a purge module. The carrier has a bearing surface, and the central part of the bearing surface is used to place the wafer to be heated. The lifting assembly is used to drive the wafer to move relative to the carrier so that the wafer and the bearing surface are spaced apart or in contact with each other. The heating module is used to heat the bearing surface to increase the temperature of the bearing surface. The purge module includes a plurality of purge holes, which are distributed on the edge of the carrier along the circumference of the bearing surface, and the plurality of purge holes protrude from the bearing surface of the carrier, and the purge holes are used to purge gas from the central part of the bearing surface of the carrier, and the gas flows back to the bearing surface. The reaction chamber disclosed in the present application can make the wafer heated more evenly, thereby reducing the risk of wafer deformation.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a reaction chamber. Background Art

[0002] In the process of semiconductor manufacturing, materials need to be deposited on the surface of the wafer, and the wafer needs to be heated during the deposition process in order to achieve a good deposition effect. However, during the deposition process, the deposited material will inevitably move into the gap between the wafer and the carrier, which will cause uneven heating of the wafer, affect the deposition effect, and cause the wafer to deform. Summary of the invention

[0003] The present application provides a reaction chamber that can heat a wafer more evenly, thereby reducing the risk of wafer deformation.

[0004] In order to achieve the above-mentioned object, the present application provides a reaction chamber, comprising a chamber body and a heating device located in the chamber body, wherein the heating device comprises a carrier, a heating module, a lifting assembly and a purge module;

[0005] The carrier has a carrying surface, and the central part of the carrying surface is used to place the wafer to be heated;

[0006] The lifting assembly is used to drive the wafer to move relative to the carrier, so that the wafer is spaced apart from the carrying surface or the wafer is in contact with the carrying surface;

[0007] The heating module is used to heat the bearing surface to increase the temperature of the bearing surface;

[0008] The purge module includes a plurality of purge holes, which are distributed at the edge of the carrier along the circumference of the carrier surface. The plurality of purge holes are arranged to protrude from the carrier surface. The purge holes are used to purge gas to the central part of the carrier surface, and the gas flows back to the carrier surface.

[0009] The reaction chamber provided in the present application is provided with a lifting assembly and a purge assembly. The lifting assembly can drive the wafer to move relative to the carrier, and the purge assembly can be used to purge gas to the bearing surface. After the wafer enters the cavity, the lifting assembly is used to place the wafer, and a certain distance is provided between the wafer and the bearing surface. After the heating module heats the bearing surface, the bearing surface transfers heat to the wafer. Since the wafer does not directly contact the bearing surface, the heat transfer can be reduced, thereby avoiding the wafer from being deformed by heat. When the reaction chamber deposits material on the wafer, a plurality of purge holes arranged around the bearing surface can be blown at the same time, and the blown gas can flow the deposited material in other directions to avoid falling on the bearing surface. When the wafer is in direct contact with the bearing surface, since there is no deposited material between the two, the uniformity of heat transfer can be guaranteed, thereby reducing the risk of wafer deformation.

[0010] In some possible implementations, the purge module further includes a gas channel and a gas source, one end of the gas channel is connected to the gas source, and the other end of the gas channel is arranged along the edge of the carrier and protrudes from the carrier bearing surface of the carrier;

[0011] The purge hole is arranged on a side wall of the gas passage facing the center of the carrier.

[0012] In some possible embodiments, the gas channel includes a first channel and a second channel that are interconnected, and the first channel is connected to the gas source;

[0013] A portion of the second channel overlaps the bearing surface of the carrier, the second channel includes a first side wall facing the center of the bearing surface, the purge hole is arranged on the first side wall, and the orthographic projection of the purge hole on the bearing surface is located within the bearing surface.

[0014] In some possible implementation schemes, the orthographic projection of the second channel on the bearing surface is a circular ring structure.

[0015] In some possible implementation schemes, the first side wall is obliquely disposed on the bearing surface.

[0016] In some possible implementations, the first side wall includes a first end away from the bearing surface and a second end close to the bearing surface, and a distance between an orthographic projection of the first end on the bearing surface and an orthographic projection of the second end on the bearing surface is 10 mm to 20 mm.

[0017] In some possible embodiments, the multiple purge holes include a circle of first purge holes arranged along the circumference of the bearing surface and a circle of second purge holes arranged along the circumference of the bearing surface, and along the radial direction of the bearing surface, the second purge holes are located on the side of the first purge holes away from the center of the bearing surface.

[0018] In some possible implementation schemes, the first purge holes and the second purge holes are arranged in a one-to-one correspondence.

[0019] In some possible implementation schemes, in a pair of the first purge hole and the second purge hole, a distance between the center of the first purge hole and the center of the second purge hole is 1.5 mm to 2.5 mm.

[0020] In some possible implementations, the diameter of the first purge hole is 2 mm to 3 mm, and / or the diameter of the second purge hole is 2 mm to 3 mm.

[0021] In some possible implementations, the first channel abuts against the carrier toward the second side wall of the carrier.

[0022] In some possible implementations, the lifting assembly includes a first station and a second station, when the lifting assembly is located at the first station, there is a gap between the wafer and the carrying surface, and when the lifting assembly is located at the second station, the wafer is in contact with the carrying surface;

[0023] When the lifting assembly is at the first station, the heating module heats the wafer at a first temperature, and when the lifting assembly is at the second station, the heating module heats the wafer at a second temperature, and the first temperature is lower than the second temperature.

[0024] In some possible implementations, a control module is further included, and the control module is used to control the lifting assembly to move from the first station to the second station at a uniform speed.

[0025] In some possible implementation schemes, when the lifting assembly is at the first station, the distance between the wafer and the carrying surface is 2 mm to 4 mm.

[0026] In some possible implementation schemes, the lifting assembly includes two lifting rods spaced apart from each other, the lifting rods pass through the platform, and the lifting rods can move relative to the platform.

[0027] In some possible implementation schemes, the flow rate of the gas purged through the purge hole gradually increases as the distance between the wafer and the carrying surface gradually decreases. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of a structure when a wafer reacts in a reaction chamber in the prior art;

[0029] Figure 2 It is a schematic diagram of the structure of preheating a wafer in a reaction chamber in the prior art;

[0030] Figure 3 for Figure 2 A schematic diagram of a structure in which a reaction occurs in a wafer;

[0031] Figure 4 A schematic diagram of the structure of the reaction chamber in the embodiment of the present application;

[0032] Figure 5 for Figure 4 A structural schematic diagram of the purge module;

[0033] Figure 6 It is a projection diagram of the first side wall in the embodiment of the present application;

[0034] Figure 7 This is another structural schematic diagram of the reaction chamber in the embodiment of the present application;

[0035] Figure 8 Schematic diagram of the relationship between the moving distance of the lifting rod and the gas purged by the purge module in the embodiment of the present application.

[0036] In the figure:

[0037] 1-wafer; 2-carrier; 10-chamber; 20-carrier; 21-carrier plate; 211-carrier surface; 22-support column; 30-deposition device; 40-lifting assembly; 41-lifting rod; 50-purge module; 51-gas source; 52-gas channel; 521-first channel; 522-second channel; 523-first side wall; 53-purge hole; 531-first purge hole; 532-second purge hole; 60-heating module; 100-wafer. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] refer to Figure 1 At present, in the process of semiconductor manufacturing, it is necessary to deposit materials on the surface of the wafer 1. To achieve this purpose, the wafer 1 needs to enter the reaction chamber, be heated and have materials deposited in the reaction chamber, and during this process, the wafer 1 is always in close contact with the surface of the carrier 2.

[0040] When heating the wafer 1, the temperature of the carrier 2 is increased by heating the carrier 2, and then the carrier 2 transfers the heat to the wafer 1, thereby heating the wafer 1. However, since the wafer 1 is directly placed on the carrier 2 after entering the reaction chamber, the temperature of the carrier 2 is relatively high, which may cause the wafer 1 to deform.

[0041] In order to solve the above problems, at present, reference Figure 2 and Figure 3 , usually the wafer 1 is heated by preheating. That is, after the wafer 1 enters the reaction chamber, the wafer 1 is first placed at a position with a certain gap from the carrier 2. At this time, the wafer 1 is not directly in contact with the carrier 2, and part of the heat of the carrier 2 is transferred to the wafer 1, so that the temperature of the wafer 1 rises to a certain level. Then, the wafer 1 is placed on the surface of the carrier 2. At this time, since the temperature difference between the wafer 1 and the carrier 2 is small, the deformation of the wafer 1 can be avoided.

[0042] However, due to the gap between wafer 1 and stage 2, when wafer 1 is in the preheating position, the deposited material will fall onto the surface of stage 2. When wafer 1 is subsequently placed on the surface of stage 2, wafer 1 and stage 2 cannot be closely attached, which results in poor heat conduction between stage 2 and wafer 1.

[0043] In addition, since the surface of wafer 1 is not a plane but a curved surface with a certain curvature, the middle of wafer 1 can be in close contact with stage 2, while there is a certain gap between the end of wafer 1 and stage 2. Therefore, when depositing material on wafer 1, the deposited material will inevitably enter the gap between the end of wafer 1 and stage 2, thereby blocking the heat conduction between stage 2 and wafer 1. When stage 2 transfers heat to wafer 1, the middle of wafer 1 receives more heat, while the end receives less heat, resulting in uneven heating of wafer 1. When the temperature of different parts of the wafer 1 body is inconsistent, wafer 1 will be broken.

[0044] Based on this, the embodiment of the present application can provide a reaction chamber, which can be used to solve the problem of poor heat conduction and uneven heating of the wafer, and reduce the risk of wafer breakage. The reaction chamber in the embodiment of the present application will be described in detail below in conjunction with specific embodiments.

[0045] refer to Figure 4, the reaction chamber in the embodiment of the present application may include a chamber 10, a heating device and a deposition device 30, wherein the heating device and the deposition device 30 may be arranged inside the chamber 10. The chamber 10 is provided with an inlet and an outlet, and the manipulator may send the wafer 100 to be deposited into the chamber 10 from the inlet, and after the deposition is completed, the wafer 100 is sent out of the chamber 10 from the outlet. In this embodiment, the chamber 10 may be a relatively closed space to ensure the deposition effect of the wafer 100. Exemplarily, the chamber 10 may be made of a stainless steel welded plate or a whole piece of aluminum to ensure that the chamber 10 is a relatively sealed space.

[0046] The heating device may include a carrier 20, a heating module 60, a lifting assembly 40, and a purge module 50. The carrier 20 may include a support column 22 and a carrier plate 21, and the support column 22 and the carrier plate 21 may be vertically arranged and used to support the carrier plate 21 so that the carrier plate 21 is placed in a horizontal state. Exemplarily, the support column 22 may be connected to the middle of the carrier plate 21 so that the force exerted by the support column 22 on the carrier plate 21 is balanced. In addition, the carrier plate 21 and the support column 22 may be in a detachable connection structure or in an integrated structure, which is not limited here.

[0047] The side of the carrier plate 21 facing away from the support column 22 has a carrier surface 211, and the carrier surface 211 can be used to place the wafer 100 to be deposited. In practical applications, the wafer 100 can be placed in the middle of the carrier surface 211 to ensure uniform deposition of the wafer 100. The heating module 60 is used to heat the carrier surface 211 so that the temperature of the carrier surface 211 increases. When the wafer 100 is placed on the carrier surface 211, the carrier surface 211 can transfer the temperature to the wafer 100, thereby increasing the temperature of the wafer 100, so as to better complete the deposition.

[0048] The structural form of the heating module 60 is not limited. For example, the heating module 60 may include a heating plate, which may be attached to the side of the carrier plate 21 opposite to the carrier surface 211. The heating plate can generate heat after being energized, and transfer the heat to the carrier surface 211. In order to facilitate the carrier surface 211 to transfer more heat to the wafer 100, the heating plate can be attached to the part of the carrier plate 21 that is opposite to the wafer 100, and the orthographic projection of the heating plate on the carrier surface 211 can also completely cover the orthographic projection of the wafer 100 on the carrier surface 211. In this way, it can be ensured that the part of the carrier surface 211 that is opposite to the wafer 100 can be heated, and then the heat is directly transferred to the wafer 100 without causing waste.

[0049] In addition, the support plate 21 may also be made of a material with high thermal conductivity, which can facilitate the improvement of the effect of heat conduction. Exemplarily, the material of the support plate 21 may be ceramic. In some other embodiments, a conductive material may also be provided inside the support plate 21. When the conductive material is energized, heat may be generated and transferred to the support surface 211, thereby increasing the temperature of the support surface 211.

[0050] Continue to refer Figure 4 , the lifting assembly 40 is arranged on the carrier 20 to drive the wafer 100 to move relative to the carrier 20, so that the wafer 100 contacts or loses contact with the carrying surface 211. As an embodiment, the lifting assembly 40 may include two lifting rods 41, which are arranged at intervals and can be symmetrically arranged with the center of the carrying surface 211 as a symmetry point. Each lifting rod 41 is penetrated by the carrying plate 21, that is, one end of the lifting rod 41 is located on one side of the carrying plate 21, and the other end is located on the other side of the carrying plate 21. The spacing between the two lifting rods 41 is less than the length of the wafer 100. When the wafer 100 is sent into the cavity 10, the wafer 100 can be placed on the top of the two lifting rods 41. Each lifting rod 41 has a certain width, so that the wafer 100 can be stably lifted. In addition, the length of each lifting rod 41 can also be greater than the size of the wafer 100, so that the wafer 100 can be lifted by the lifting rod 41 as a whole, further ensuring the stability of the wafer 100.

[0051] Each lifting rod 41 can move relative to the carrier 20 in a height direction, which is a direction perpendicular to the carrier plate 21. When the wafer 100 is placed on top of the two lifting rods 41, the two lifting rods 41 can move simultaneously, thereby driving the wafer 100 to move.

[0052] The reaction chamber in this embodiment can preheat the wafer 100. Specifically, when the wafer 100 is sent into the chamber 10 by a transfer device such as a robot, the wafer 100 is placed on top of the two lifting rods 41. At this time, the lifting rod 41 is in the first position, that is, there is a certain gap between the lifting rod 41 and the carrier 20. The heating module 60 heats the carrier plate 21 at a first temperature, so that the carrier plate 21 is heated to the first stage, and the heat of the first stage is transferred to the wafer 100. It should be understood that the first temperature is a lower temperature than that when the reaction chamber is operating normally. When the wafer 100 is not placed on the carrying surface 211, the temperature of the wafer 100 is increased to a certain extent by preheating with the wafer 100, which can avoid the subsequent wafer 100 being placed on the carrying surface 211. The temperature difference between the carrying surface 211 and the wafer 100 is large, which causes the wafer 100 to be damaged.

[0053] Further, when the wafer 100 is preheated, the lifting rod 41 moves downward until the top of the lifting rod 41 is lower than the carrying surface 211. At this time, the wafer 100 is in direct contact with the carrying surface 211. The heating module 60 heats the carrying plate 21 at the second temperature, so that the carrying plate 21 is heated to the second stage, and the heat of the second stage is transferred to the wafer 100. The second temperature here can be understood as the temperature of the normal operation of the reaction chamber. After the wafer 100 further receives heat, the temperature is further increased. Since the temperature difference between the wafer 100 and the carrying surface 211 is small, it can be ensured that the wafer 100 will not be damaged.

[0054] In this embodiment, a driving assembly (not shown in the figure) may be further provided to facilitate the control of the lifting rod 41 to move up and down. The driving assembly may include a control module and a driving module, one end of the driving module is connected to the lifting rod 41, and the other end is connected to the control module. The control module may provide output power to the driving module, so that the driving module drives the two lifting rods 41 to move synchronously.

[0055] In some embodiments, the wafer 100 can also be in a dynamic movement process during the preheating process. Specifically, when the wafer 100 enters the cavity 10, the lifting rod 41 is in the first state, the wafer 100 is placed on the top of the lifting rod 41, and the heating module 60 heats the carrier plate 21 at a first temperature. After heating for a period of time, for example, 5s, the driving module drives the lifting rod 41 to move downward a distance so that the wafer 100 is at position k1, that is, the distance between the wafer 100 and the carrying surface 211 is reduced. At this time, the heating module 60 can increase the temperature and heat the carrier plate 21 at T1. It should be noted that T1 is greater than the first temperature and less than the second temperature. After the wafer 100 is heated at position k1 for a period of time, for example, 5s, the driving module can also drive the lifting rod 41 to move downward a distance so that the wafer 100 is at position k2. It can be understood that k2 is lower than k1. At this time, the heating module 60 can increase the temperature and heat the carrier plate 21 with T2, where T2 is greater than T1 and less than the second temperature. After the wafer 100 has been heated at position k2 for a period of time, the driving module drives the lifting rod 41 to move downward again. In this way, the above process is repeated, the position of the wafer 100 is gradually lowered, and the temperature of the carrier plate 21 heated by the heating module 60 is gradually increased until the wafer 100 contacts the carrier surface 211. It should be understood that by dynamically adjusting the distance between the wafer 100 and the carrier surface 211, the temperature of the wafer 100 can be gradually increased, so that the wafer 100 can achieve a better preheating effect.

[0056] In this embodiment, when the lifting pin 41 is at the first position, the distance between the top of the lifting pin 41 and the carrying surface 211 is 2 mm to 4 mm, that is, the distance between the position where the wafer 100 starts to be preheated and the carrying surface 211 is 2 mm to 4 mm. Exemplarily, the distance between the top of the lifting pin 41 and the carrying surface 211 is 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, and so on.

[0057] Furthermore, when the driving module drives the lifting rod 41 to move a certain distance, the lifting rod 41 can be moved at a constant speed. That is, when the lifting rod 41 descends a certain distance each time, the distance of each descent is the same. Taking the lifting rod 41 as an example, when the lifting rod 41 is in the first station, the distance between its top and the bearing surface 211 is 3 mm, and the distance that the lifting rod 41 moves each time can be 0.2 mm. Of course, the distance that the lifting rod 41 moves each time is not limited to 2 mm, and can also be, for example, 1.5 mm, 2.5 mm, and so on. In actual application, the distance that the lifting rod 41 moves each time can be designed according to factors such as the preheating temperature, the normal operating temperature, and the distance between the top of the lifting rod 41 and the bearing surface 211, which will not be described here.

[0058] Continue to refer Figure 4 The deposition device 30 is located at the top of the chamber 10 and is arranged directly opposite to the wafer 100. The deposition device 30 is used to deposit materials toward the wafer 100. In specific implementation, when the wafer 100 enters the chamber 10 and is placed on the top of the lifting pin 41, the deposition device 30 starts to provide deposition materials to the wafer 100 and provides deposition materials to the wafer 100 at a uniform spraying speed.

[0059] For reference Figure 4 and Figure 5 , the purge module 50 may include a gas source 51 and a gas channel 52, one end of the gas channel 52 is connected to the gas source 51, and the other end is provided with a plurality of purge holes 53. The gas source 51 can provide gas to the gas channel 52, and the gas channel 52 purges the central part of the carrying surface 211 through the purge holes 53 at a certain flow rate. As mentioned above, when the wafer 100 enters the chamber 10, it needs to be preheated first, and at the same time, the deposition device 30 deposits the wafer 100. Since there is a certain distance between the wafer 100 and the carrying surface 211, part of the deposited material will fall between the wafer 100 and the carrying surface 211, which will affect the subsequent heating of the wafer 100. In this embodiment, by setting the purge hole 53 to purge the gas toward the central part of the carrying surface 211, the deposited material on the carrying surface 211 can be blown away under the action of the flowing gas.

[0060] Specifically, the gas channel 52 may include a first channel 521 and a second channel 522, and the first channel 521 and the second channel 522 are connected to each other. The first channel 521 may be arranged perpendicular to the carrier plate 21, and connected to the edge of the carrier plate 21 around the circumference of the carrier plate 21. The second channel 522 is perpendicular to the first channel 521, and a portion of the second channel 522 overlaps the carrier surface 211, and a first end of the second channel 522 is connected to the first channel 521, and a plurality of purge holes 53 are arranged at the other end. One end of the first channel 521 away from the second channel 522 is connected to the gas source 51, and the gas can enter the second channel 522 through the first channel 521, and then be blown out through the purge holes 53.

[0061] The first channel 521 is located on the outer side of the bearing plate 21 and is in close contact with the bearing plate 21, so that the structure between the gas channel 52 and the bearing plate 21 is stable. Since the second channel 522 is connected to the first channel 521, the second channel 522 can be arranged on the bearing surface 211 around the circumference of the bearing plate 21. The shape of the second channel 522 is consistent with the shape of the bearing surface 211. For example, when the shape of the bearing surface 211 is circular, the orthographic projection of the second channel 522 on the bearing surface 211 is a circular ring. Alternatively, when the shape of the bearing surface 211 is square, the orthographic projection of the second channel 522 on the bearing surface 211 is a "U"-shaped structure. It should be noted that in this embodiment, the shape of the bearing surface 211 is circular for description.

[0062] In addition, the gas channel 52 and the carrier 20 can be fixedly connected, for example, they can be connected by welding to form an integrated structure, so that the two can be firmly connected. Alternatively, the gas channel 52 and the carrier 20 can also be a split structure, which can facilitate the maintenance of the gas channel 52 separately at a later time.

[0063] Continue to refer Figure 4 and Figure 5 , a first side wall 523 is provided on one side of the second channel 522 facing the center of the bearing surface 211, and a certain distance exists between the first side wall 523 and the lifting rod 41. As an embodiment, a certain angle exists between the first side wall 523 and the bearing surface 211, that is, the first side wall 523 is obliquely arranged on the bearing surface 211. The first side wall 523 includes a first end away from the bearing surface 211 and a second end close to the bearing surface 211, so that a part of the second channel 522 is a triangular structure.

[0064] Since the first side wall 523 is tilted, when the gas is blown out from the second channel 522 through the purge hole 53, the gas does not flow parallel to the carrying surface 211, but flows upward at a certain angle. In addition, since the deposition material flows from top to bottom, when the deposition material encounters the upward airflow, the deposition material will change the flow direction and will not fall down onto the carrying surface 211, thus avoiding the problem of insufficient heating of the wafer 100 due to the inability of the wafer 100 to directly contact the carrying surface 211.

[0065] As an embodiment, the orthographic projection of the second end of the first side wall 523 on the carrying surface 211 can roughly coincide with the orthographic projection of the end of the wafer 100 on the carrying surface 211, so that when the wafer 100 falls on the carrying surface 211, the first side wall 523 will not affect the contact between the wafer 100 and the carrying surface 211. In addition, since the gas blown out of the purge hole 53 flows upward, the deposition material can be prevented from falling on the carrying surface 211 to the greatest extent.

[0066] Furthermore, the height of the second channel 522 relative to the carrying surface 211 may be slightly less than the height of the wafer 100 relative to the carrying surface 211 when the lifting pin 41 is in the first station. For example, the height of the second channel 522 relative to the carrying surface 211 may be the same as the height between the top of the lifting pin 41 and the carrying surface 211. Since the purged gas flows at a certain angle to the carrying surface 211, by designing the height of the second channel 522, more gas can be blown to the end of the wafer 100, thereby better preventing the deposition material from falling.

[0067] For reference Figure 6 and Figure 7 , the multiple purge holes 53 provided on the first side wall 523 include a circle of first purge holes 531 and a circle of second purge holes 532, wherein the first purge holes 531 are distributed around the circumference of the first side wall 523, and the second purge holes 532 are also distributed around the circumference of the first side wall 523. The orthographic projections of all the first purge holes 531 on the bearing surface 211 are located close to the center of the bearing surface 211, and the orthographic projections of all the second purge holes 532 on the bearing surface 211 are away from the center of the bearing surface 211. That is, in the height direction, the first purge holes 531 are located below the second purge holes 532. It can be understood that by providing two circles of purge holes 53, the flow of gas can be increased, so that the deposition material can be better purged.

[0068] by Figure 7For example, the flow direction of the gas blown out of the first purge hole 531 is roughly the same as the flow direction of the gas blown out of the second purge hole 532. When the deposition material falls, the deposition material first passes through the gas blown out of the second purge hole 532, and a part of the deposition material is purged by the gas and flows in other directions, while the other part of the deposition material continues to fall. When the deposition material continues to fall, it passes through the gas blown out of the first purge hole 531 again, thereby purging the remaining deposition material to flow in other directions. In this way, by providing the first purge hole 531 and the second purge hole 532, the deposition material can be better prevented from falling onto the carrying surface 211.

[0069] like Figure 6 As shown, each first purge hole 531 may correspond to a second purge hole 532, that is, a first purge hole 531 is aligned with a second purge hole 532. Alternatively, in some other embodiments, the first purge holes 531 located in the inner circle and the second purge holes 532 located in the outer circle may be staggered. It can be understood that along the circumference of the bearing surface 211, a second purge hole 532 is provided between any two adjacent first purge holes 531, or a first purge hole 531 is provided between any two adjacent second purge holes 532. It should be noted that the positional relationship between the above-mentioned first purge holes 531 and the second purge holes 532 is only used as an example. In actual application, the first purge holes 531 and the second purge holes 532 may also be other design schemes. For example, the number of the first purge holes 531 is twice the number of the second purge holes 532, and two first purge holes 531 correspond to one second purge hole 532.

[0070] In this embodiment, the shape of the first purge hole 531 may be a circular hole, and the shape of the second purge hole 532 may also be a circular hole. Alternatively, the shape of the first purge hole 531 may also be, for example, a triangle, a square, a hexagon, etc., and similarly, the shape of the second purge hole 532 may also be a triangle, a square, a hexagon, etc., which is not limited in this embodiment.

[0071] In addition, the number of first purge holes 531 is not limited. When the diameter of the first purge holes 531 is small, more first purge holes 531 can be provided. When the diameter of the first purge holes 531 is large, the number of first purge holes 531 can be slightly reduced. Similarly, the number of second purge holes 532 is also not limited, which will not be described here. As an embodiment, the first purge holes 531 can be evenly distributed along the circumference of the bearing surface 211, and the second purge holes 532 can also be evenly distributed along the circumference of the bearing surface 211. For example, when 18 first purge holes 531 are provided, the angle between any two adjacent first purge holes 531 is 20°.

[0072] In this embodiment, the distance between the orthographic projection of the first end of the first side wall 523 on the bearing surface 211 and the orthographic projection of the second end on the bearing surface 211 is 10 mm to 20 mm. For example, the distance between the two can be 10 mm, 15 mm, 20 mm, etc. By designing the size of the first side wall 523, the design of each size of the first purge hole 531 and the second purge hole 532 can be realized, for example, the size of the two purge holes 53, the distance between the two purge holes 53, etc. In addition, the flow direction of the gas blown out of the first purge hole 531 and the second purge hole 532 can be adjusted by designing the angle between the first side wall 523 and the bearing surface 211.

[0073] Specifically, the diameter of the first purge hole 531 may be 2 mm to 3 mm. For example, the diameter of the first purge hole 531 is 2 mm, 2.5 mm, 3 mm, etc. The diameter of the second purge hole 532 may also be 2 mm to 3 mm. For example, the diameter of the second purge hole 532 is 2 mm, 2.5 mm, 3 mm, etc. It should be understood that when the size of the first side wall 523 is constant, the size of the first purge hole 531 and the second purge hole 532 may be made larger as much as possible, so that more gas can be blown out in the same time, thereby achieving a better purge effect.

[0074] Taking the corresponding arrangement of the first purge hole 531 and the second purge hole 532 as an example, the distance between the center of the first purge hole 531 and the center of the second purge hole 532 may be 1.5 mm to 2.5 mm, for example, the distance between the center of the first purge hole 531 and the center of the second purge hole 532 is 1.5 mm, 2 mm, 2.5 mm, etc. By arranging the first purge hole 531 and the second purge hole 532 at intervals, not only can the collision of the gases blown out of the two purge holes 53 and the change of the flow direction of the gases be avoided, but also the gases blown out of the two purge holes 53 can work better together.

[0075] refer to Figure 8 The solid line in the figure represents the moving distance of the lifting rod 41 from the first station to the second station, and the dotted line represents the change in the gas flow rate blown out by the purge module 50. Figure 8It can be seen that when the lifting rod 41 is in the first position, the distance moved by the lifting rod 41 is 0, and the corresponding gas flow rate at this time is the largest. It should be understood that when the lifting rod 41 is in the first position, the distance between the wafer 100 and the carrying surface 211 is large. When the deposition material falls, it is more likely to fall to the part of the carrying surface 211 that is opposite to the wafer 100. Therefore, increasing the gas flow rate can enhance the purging effect on the deposition material and reduce the deposition material falling on the carrying surface 211. As the moving distance of the lifting rod 41 gradually increases, the distance between the wafer 100 and the carrying surface 211 gradually decreases, and the gas flow rate blown out by the purge module 50 also decreases accordingly. This is because when the distance between the wafer 100 and the supporting surface 211 is small, the deposition material is blown by the first purge hole 531 and the second purge hole 532 to flow in other directions before it touches the wafer 100 during the falling process. The deposition material is not easy to fall to the part of the supporting surface 211 facing the wafer 100, so the gas flow rate can be reduced, thereby saving energy.

[0076] It should be noted that when the wafer 100 contacts the carrying surface 211, the purge module 50 continues to purge the deposition material. Since the wafer 100 is an elliptical structure, when the wafer 100 contacts the carrying surface 211, there is still a certain gap between its end and the carrying surface 211. When the purge module 50 continues to blow air, the deposition material can be prevented from falling between the end of the wafer 100 and the carrying surface 211.

[0077] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A reaction chamber, characterized in that: It includes a cavity and a heating device located in the cavity, wherein the heating device includes a carrier, a heating module, a lifting assembly and a purge module; The carrier has a carrying surface, and the central part of the carrying surface is used to place the wafer to be heated; The lifting assembly is used to drive the wafer to move relative to the carrier, so that the wafer is spaced apart from the carrying surface or the wafer is in contact with the carrying surface; The heating module is used to heat the bearing surface to increase the temperature of the bearing surface; The purge module includes a plurality of purge holes, which are distributed at the edge of the carrier along the circumference of the carrier surface. The plurality of purge holes are arranged to protrude from the carrier surface. The purge holes are used to purge gas to the central part of the carrier surface, and the gas flows back to the carrier surface.

2. The reaction chamber according to claim 1, characterized in that: The purge module further includes a gas channel and a gas source, one end of the gas channel is connected to the gas source, and the other end of the gas channel is arranged along the edge of the carrier and protrudes from the carrier surface of the carrier; The purge hole is arranged on a side wall of the gas passage facing the center of the carrier.

3. The reaction chamber according to claim 2, characterized in that: The gas channel comprises a first channel and a second channel which are connected to each other, and the first channel is connected to the gas source; A portion of the second channel overlaps the bearing surface of the carrier, the second channel includes a first side wall facing the center of the bearing surface, the purge hole is arranged on the first side wall, and the orthographic projection of the purge hole on the bearing surface is located within the bearing surface.

4. The reaction chamber according to claim 3, characterized in that: The orthographic projection of the second channel on the bearing surface is a circular ring structure.

5. The reaction chamber according to claim 3, characterized in that: The first side wall is obliquely disposed on the bearing surface.

6. The reaction chamber according to claim 5, characterized in that: The first side wall includes a first end away from the bearing surface and a second end close to the bearing surface, and a distance between an orthographic projection of the first end on the bearing surface and an orthographic projection of the second end on the bearing surface is 10 mm to 20 mm.

7. The reaction chamber according to claim 3, characterized in that: The multiple purge holes include a circle of first purge holes arranged along the circumference of the bearing surface and a circle of second purge holes arranged along the circumference of the bearing surface. Along the radial direction of the bearing surface, the second purge holes are located on the side of the first purge holes away from the central part of the bearing surface.

8. The reaction chamber according to claim 7, characterized in that: The first purge holes and the second purge holes are arranged in a one-to-one correspondence.

9. The reaction chamber according to claim 8, characterized in that: In a pair of the first purge hole and the second purge hole, a distance between a center of the first purge hole and a center of the second purge hole is 1.5 mm to 2.5 mm.

10. The reaction chamber according to claim 7, characterized in that: The diameter of the first purge hole is 2 mm to 3 mm, and / or the diameter of the second purge hole is 2 mm to 3 mm.

11. The reaction chamber according to claim 3, characterized in that: The first channel abuts against the carrier toward the second side wall of the carrier.

12. The reaction chamber according to claim 1, characterized in that: The lifting assembly comprises a first station and a second station, when the lifting assembly is located at the first station, there is a gap between the wafer and the carrying surface, and when the lifting assembly is located at the second station, the wafer contacts the carrying surface; When the lifting assembly is at the first station, the heating module heats the wafer at a first temperature, and when the lifting assembly is at the second station, the heating module heats the wafer at a second temperature, and the first temperature is lower than the second temperature.

13. The reaction chamber according to claim 12, characterized in that: It also includes a control module, which is used to control the lifting assembly to move from the first station to the second station at a uniform speed.

14. The reaction chamber according to claim 13, characterized in that: When the lifting assembly is at the first station, the distance between the wafer and the carrying surface is 2 mm to 4 mm.

15. The reaction chamber according to claim 1, characterized in that: The lifting assembly includes two lifting rods arranged at intervals, the lifting rods penetrate the platform, and the lifting rods can move relative to the platform.

16. The reaction chamber according to claim 1, characterized in that: The flow rate of the gas purged through the purge hole gradually increases as the distance between the wafer and the carrying surface gradually decreases.

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