High frequency module and communication device

Abstract

A high-frequency module (1A) includes a module substrate (91), a first circuit component and a second circuit component disposed inside the module substrate (91), and a metal shield plate (80) set to a ground potential, the module substrate (91) has a dielectric portion (71) including a first dielectric material, and a dielectric portion (70) including a second dielectric material different from the first dielectric material and formed inside the dielectric portion (71), and the metal shield plate (80) is disposed in the dielectric portion (70) between the first circuit component and the second circuit component.

Description

Technical Field

[0001] This invention relates to high-frequency modules and communication devices. Background Technology

[0002] In mobile communication devices such as portable phones, especially with the advancement of multi-band technology, the configuration structure of circuit elements constituting the high-frequency front-end circuit has become more complex.

[0003] Patent Document 1 discloses a circuit structure for a transceiver (transceiver circuit), which includes multiple transmitters (transmit paths), multiple receivers (receive paths), and a switchplexer (antenna switch) configured between the multiple transmitters, multiple receivers, and an antenna. Each of the multiple transmitters has a transmit circuit, a power amplifier (PA), and an output circuit; each of the multiple receivers has a receive circuit, a low-noise amplifier (LNA), and an input circuit. The output circuit includes a transmit filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receive filter, an impedance matching circuit, and a duplexer. Based on this structure, simultaneous transmission, simultaneous reception, or simultaneous transmit and receive can be performed through the switching action of the switchplexer.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: JP Patent No. 2014-522216 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] However, when the transceiver (transceiver circuit) disclosed in Patent Document 1 is constructed using a high-frequency module mounted on a mobile communication device, it is conceivable that at least two electromagnetic fields will couple in the circuit components respectively configured in the transmitting path, the receiving path, and the transceiver path including the antenna switch. In this case, harmonic components of the high-output transmitting signal amplified by the PA (transmit power amplifier) ​​may sometimes overlap with the transmitting signal, resulting in a deterioration in the quality of the transmitting signal. Furthermore, the isolation between the transmitting and receiving signals may sometimes decrease due to the aforementioned electromagnetic field coupling, and unwanted waves such as the aforementioned harmonics or intermodulation distortion of the transmitting signal with other high-frequency signals may flow into the receiving path, thereby degrading the receiving sensitivity. In addition, the two receiving signals may sometimes interfere with each other due to the aforementioned electromagnetic field coupling, resulting in a deterioration in the receiving sensitivity.

[0009] The present invention was made to solve the above-mentioned problems, and its purpose is to provide a high-frequency module and a communication device that suppresses the degradation of the quality of transmitted or received signals.

[0010] Technical solutions for solving the problem

[0011] One aspect of the present invention relates to a high-frequency module comprising a module substrate, a first circuit component and a second circuit component disposed inside the module substrate, and a metal shielding plate set to a ground potential. The module substrate has a first dielectric portion comprising a first dielectric material and a second dielectric portion comprising a second dielectric material having a relative permittivity different from that of the first dielectric material and formed inside the first dielectric portion. The metal shielding plate is disposed between the first circuit component and the second circuit component in the second dielectric portion.

[0012] Invention Effects

[0013] According to the present invention, a high-frequency module and a communication device that suppress the degradation of the quality of transmitted or received signals can be provided. Attached Figure Description

[0014] Figure 1 This is a circuit structure diagram of the high-frequency module and communication device involved in the implementation method.

[0015] Figure 2 This is a top view of the high-frequency module involved in the embodiment.

[0016] Figure 3 This is a cross-sectional view of the high-frequency module involved in the embodiment.

[0017] Figure 4A This is a perspective view showing the appearance of the first example of a metal shielding plate.

[0018] Figure 4B This is a perspective view showing the appearance of the second example of a metal shielding plate.

[0019] Figure 4C This is a perspective view showing the appearance of the third example of a metal shielding plate.

[0020] Figure 4D This is a perspective view showing the appearance of the fourth example of a metal shielding plate.

[0021] Figure 4E This is a perspective view showing the appearance of the fifth example of a metal shielding plate.

[0022] Figure 4F This is a perspective view showing the appearance of the sixth example of a metal shielding plate. Detailed Implementation

[0023] The embodiments of the present invention will now be described in detail. Furthermore, the embodiments described below are either general or specific examples. Additionally, the numerical values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments, examples, and modifications are merely examples and are not intended to limit the present invention. Furthermore, constituent elements not described in the independent claims in the following embodiments and modifications are described as arbitrary constituent elements. Moreover, the sizes or size ratios of the constituent elements shown in the drawings are not necessarily precise. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0024] Furthermore, the following terms, such as parallel and perpendicular, which indicate the relationship between elements, and rectangular shape, which indicates the shape of elements, and numerical range, do not simply mean strict, but imply substantially equivalent ranges, for example, including differences of a few percent.

[0025] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is perpendicular to the main surface of the module substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0026] Furthermore, in the circuit structure disclosed herein, the term "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also electrical connections via other circuit components. Additionally, the term "connection between A and B" means a connection between A and B, and between both A and B.

[0027] Furthermore, in the modular structure disclosed herein, "top view" means viewing an object by orthographic projection from the positive z-axis onto the xy-plane. "Component disposed on the main surface of the substrate" includes not only components disposed on the main surface in contact with it, but also components disposed above the main surface without contact, and components partially embedded into the substrate from the main surface side. "A disposed between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. Furthermore, terms indicating relationships between elements, such as "parallel" and "perpendicular," and terms indicating the shape of elements, such as "rectangular," do not merely have a strict meaning, but rather imply a substantially equivalent range, including, for example, a degree of error.

[0028] Furthermore, the term "transmit path" hereafter refers to a transmission line consisting of wiring for transmitting high-frequency transmitted signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Similarly, the term "receive path" refers to a transmission line consisting of wiring for transmitting high-frequency received signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Finally, the term "transmit-receive path" refers to a transmission line consisting of wiring for both transmitting and receiving high-frequency transmitted and received signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0029] (Implementation Method)

[0030] [1. Circuit structure of high-frequency module 1 and communication device 5]

[0031] Figure 1 This is a circuit diagram of the high-frequency module 1 and the communication device 5 according to the embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0032] RFIC3 is an RF signal processing circuit that processes the high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes the high-frequency received signal input via the receive signal path of high-frequency module 1 through down-conversion or the like, and outputs the received signal generated by the signal processing to BBIC4. In addition, RFIC3 processes the transmitted signal input from BBIC4 through up-conversion or the like, and outputs the high-frequency transmitted signal generated by the signal processing to the transmit signal path of high-frequency module 1.

[0033] BBIC4 is a circuit that performs signal processing using an intermediate frequency band that is lower than the high-frequency signal propagating in high-frequency module 1. The signal processed by BBIC4 is used, for example, as an image signal for image display, or as an audio signal for communication via a speaker.

[0034] Furthermore, RFIC3 also functions as a control unit to control the connections of switches 40, 41, and 42 of the high-frequency module 1 based on the communication frequency band (band) being used. Specifically, RFIC3 switches the connections of switches 40 to 42 of the high-frequency module 1 according to control signals (not shown). Alternatively, the control unit can be located outside RFIC3, for example, it can be located in the high-frequency module 1 or BBIC4.

[0035] Antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1, radiating high-frequency signals output from the high-frequency module 1. In addition, it receives high-frequency signals from the outside and outputs them to the high-frequency module 1.

[0036] Furthermore, in the communication device 5 according to this embodiment, the antenna 2 and BBIC4 are not essential components.

[0037] Next, the detailed structure of high-frequency module 1 will be explained.

[0038] like Figure 1 As shown, the high-frequency module 1 includes a power amplifier 10, a low-noise amplifier 20, transmit filters 31 and 33, receive filters 32 and 34, matching circuits 51 and 52, switches 40, 41 and 42, an antenna connection terminal 100, a transmit input terminal 110, and a receive output terminal 120.

[0039] Antenna connection terminal 100 is connected to antenna 2. Transmit input terminal 110 is used to receive transmitted signals from the outside of the high-frequency module 1 (RFIC3). Receive output terminal 120 is used to supply received signals to the outside of the high-frequency module 1 (RFIC3).

[0040] Power amplifier 10 is a transmitting amplifier that amplifies the transmitted signals of communication band A and communication band B. The input terminal of power amplifier 10 is connected to the transmitting input terminal 110, and the output terminal of power amplifier 10 is connected to the matching circuit 51.

[0041] The low-noise amplifier 20 is a receiving amplifier that amplifies the received signals of communication band A and communication band B with low noise. The input terminal of the low-noise amplifier 20 is connected to the matching circuit 52, and the output terminal of the low-noise amplifier 20 is connected to the receiving output terminal 120.

[0042] Transmit filter 31 is configured in the transmit path AT connecting power amplifier 10 and switch 40, allowing the transmit signal of the transmit band of communication frequency band A in the transmit signal amplified by power amplifier 10 to pass through. Furthermore, transmit filter 33 is configured in the transmit path BT connecting power amplifier 10 and switch 40, allowing the transmit signal of the transmit band of communication frequency band B in the transmit signal amplified by power amplifier 10 to pass through.

[0043] Receiver filter 32 is configured in the receive path AR that connects the low-noise amplifier 20 and the switch 40, allowing received signals in the receive band of communication frequency band A from the received signals input from the antenna connection terminal 100 to pass through. Furthermore, receiver filter 34 is configured in the receive path BR that connects the low-noise amplifier 20 and the switch 40, allowing received signals in the receive band of communication frequency band B from the received signals input from the antenna connection terminal 100 to pass through.

[0044] In addition, the aforementioned transmitting filters 31 and 33, and receiving filters 32 and 34 may be, for example, any of the following: surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters; and are not limited to these.

[0045] Transmit filter 31 and receive filter 32 constitute a duplexer 30 with communication frequency band A as the passband. In addition, transmit filter 33 and receive filter 34 constitute a duplexer 35 with communication frequency band B as the passband.

[0046] Alternatively, duplexers 30 and 35 can each be a filter that transmits in time-division duplex (TDD) mode. In this case, at least one of the stages before and after the aforementioned filter is configured with a switch for switching between transmitting and receiving.

[0047] Matching circuit 51 is connected between power amplifier 10 and switch 41 to achieve impedance matching between power amplifier 10 and transmitting filter 31. Matching circuit 51 has at least one inductor. Alternatively, matching circuit 51 can be connected in series with transmitting path AT or connected between transmitting path AT and ground.

[0048] Matching circuit 52 is connected between low-noise amplifier 20 and switch 42 to achieve impedance matching between low-noise amplifier 20 and receiving filter 32. Matching circuit 52 has at least one inductor. Alternatively, matching circuit 52 can be configured in series in the receiving path AR or connected between the receiving path AR and ground.

[0049] Alternatively, matching circuits can be provided in the transmission path AT between the transmission filter 31 and the switch 41, and in the transmission path BT between the transmission filter 33 and the switch 41, respectively, instead of matching circuit 51.

[0050] Alternatively, matching circuits can be provided in the receiving path AR between the receiving filter 32 and the switch 42, and in the receiving path BR between the receiving filter 34 and the switch 42, instead of matching circuit 52.

[0051] Alternatively, a matching circuit may be configured between the antenna connection terminal 100 and the switch 40.

[0052] The switch 40 has a common terminal 40a, a selection terminal 40b, and a selection terminal 40c. The common terminal 40a is connected to the antenna connection terminal 100, the selection terminal 40b is connected to the duplexer 30, and the selection terminal 40c is connected to the duplexer 35. That is, the switch 40 is an antenna switch disposed between the antenna connection terminal 100 and the duplexers 30 and 35, switching (1) the connection and non-connection of the antenna connection terminal 100 and the duplexer 30, and switching (2) the connection and non-connection of the antenna connection terminal 100 and the duplexer 35. In addition, the switch 40 is composed of a multi-connection type switch circuit capable of simultaneously performing the above (1) and (2) connections.

[0053] Switch 41 has a common terminal 41a, selection terminals 41b and 41c, and is configured in the transmission path connecting power amplifier 10 and transmit filters 31 and 33, switching the connection between power amplifier 10 and transmit filter 31, and between power amplifier 10 and transmit filter 33. Switch 41 is, for example, an SPDT (Single Pole Double Throw) type switch circuit with common terminal 41a connected to the output terminal of power amplifier 10 via matching circuit 51, selection terminal 41b connected to transmit filter 31, and selection terminal 41c connected to transmit filter 33.

[0054] Switch 42 has a common terminal 42a, selection terminals 42b and 42c, and is configured in the receiving path that connects the low-noise amplifier 20 and the receiving filters 32 and 34, switching the connection between the low-noise amplifier 20 and the receiving filter 32, and between the low-noise amplifier 20 and the receiving filter 34. Switch 42 is, for example, an SPDT type switch circuit in which the common terminal 42a is connected to the input terminal of the low-noise amplifier 20 via the matching circuit 52, the selection terminal 42b is connected to the receiving filter 32, and the selection terminal 42c is connected to the receiving filter 34.

[0055] Additionally, the transmit path AT transmits the signal for communication band A and connects the transmit input terminal 110 and the common terminal 40a. Similarly, the transmit path BT transmits the signal for communication band B and connects the transmit input terminal 110 and the common terminal 40a. The receive path AR transmits the received signal for communication band A and connects the receive output terminal 120 and the common terminal 40a. The receive path BR transmits the received signal for communication band B and connects the receive output terminal 120 and the common terminal 40a. Finally, the transmit / receive path CTR transmits both the transmitted and received signals for communication band A and communication band B, and connects the antenna connection terminal 100 and the common terminal 40a.

[0056] In the high-frequency module 1 with the above-described circuit structure, the power amplifier 10, the matching circuit 51, the switch 41, and the transmitting filter 31 constitute a first transmitting circuit that outputs a transmitting signal in communication band A toward the antenna connection terminal 100. Furthermore, the power amplifier 10, the matching circuit 51, the switch 41, and the transmitting filter 33 constitute a second transmitting circuit that outputs a transmitting signal in communication band B toward the antenna connection terminal 100.

[0057] Furthermore, the low-noise amplifier 20, matching circuit 52, switch 42, and receiving filter 32 constitute a first receiving circuit that receives the signal in communication band A from antenna 2 via antenna connection terminal 100. Additionally, the low-noise amplifier 20, matching circuit 52, switch 42, and receiving filter 34 constitute a second receiving circuit that receives the signal in communication band B from antenna 2 via antenna connection terminal 100.

[0058] According to the above circuit structure, the high-frequency module 1 involved in this embodiment can perform at least one of the following: (1) transmitting and receiving high-frequency signals in communication band A, (2) transmitting and receiving high-frequency signals in communication band B, and (3) simultaneously transmitting, receiving, or transmitting and receiving high-frequency signals in communication band A and communication band B.

[0059] Furthermore, in the high-frequency module of the present invention, the transmitting circuit and the receiving circuit may not be connected to the antenna connection terminal 100 via the switch 40, and the transmitting circuit and the receiving circuit may be connected to the antenna 2 via different terminals. Moreover, as the circuit structure of the high-frequency module of the present invention, it is sufficient to have at least two of the following paths: a transmitting path, a receiving path, and a transmit / receive path, and one or more circuit components respectively disposed on the two paths. Furthermore, it is sufficient to have either a first transmitting circuit or a second transmitting circuit. Furthermore, it is sufficient to have either a first receiving circuit or a second receiving circuit.

[0060] In the high-frequency module 1 with the above-described circuit structure, if at least two electromagnetic fields couple with the circuit components respectively disposed in the transmitting path, receiving path, and transceiver path, the harmonic components of the high-output transmitting signal amplified by the power amplifier may sometimes overlap with the transmitting signal, resulting in a deterioration in the quality of the transmitting signal. Furthermore, the isolation between transmitting and receiving signals may sometimes decrease due to the aforementioned electromagnetic field coupling, allowing unwanted waves such as the aforementioned harmonics or intermodulation distortions between the transmitting signal and other high-frequency signals to flow into the receiving path, thereby degrading the receiving sensitivity. Additionally, the two received signals may sometimes interfere with each other due to the aforementioned electromagnetic field coupling, further degrading the receiving sensitivity.

[0061] In this respect, the high-frequency module 1 according to this embodiment has a structure for suppressing the above-mentioned electromagnetic field coupling. Hereinafter, the structure for suppressing the above-mentioned electromagnetic field coupling in the high-frequency module 1 according to this embodiment will be described.

[0062] [2. Circuit component configuration structure of the high-frequency module 1A according to the embodiment]

[0063] Figure 2 This is a top view schematic diagram of the high-frequency module 1A involved in the embodiment. Furthermore, Figure 3 This is a schematic cross-sectional view of the high-frequency module 1A involved in the embodiment; specifically, it is... Figure 2 A cross-sectional view at line III-III. Additionally, in Figure 2 In (a), the view through the z-axis as seen from the positive z-axis direction is shown. Figure 3 A diagram showing the arrangement of circuit elements in the case of a section plane parallel to the main plane 91a, along line IIa-IIa. On the other hand, in... Figure 2 In (b), the view through the z-axis as seen from the positive z-axis direction is shown. Figure 3 The circuit element configuration diagram in the case of a section plane parallel to the main plane 91a along line IIb-IIb.

[0064] The embodiment specifically illustrates the configuration structure of each circuit component constituting the high-frequency module 1 according to the embodiment.

[0065] like Figure 2 As shown, the high-frequency module 1A involved in this embodiment, in addition to Figure 1 In addition to the circuit structure shown, it also includes a module substrate 91, a metal shielding plate 80, a metal shielding layer 95, a resin component 92, an external connection terminal 150, and a via conductor 96.

[0066] The module substrate 91 is a substrate on which the first and second transmitting circuits and the first and second receiving circuits can be mounted on the main surfaces 91a and 91b. For example, the module substrate 91 can be a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board, etc., with a multilayer dielectric structure. Furthermore, an antenna connection terminal 100, a transmitting input terminal 110, and a receiving output terminal 120 may also be formed on the module substrate 91.

[0067] like Figure 2 as well as Figure 3 As shown, the module substrate 91 has: a dielectric portion 71 (first dielectric portion) containing a first dielectric material; and a dielectric portion 70 containing a second dielectric material having a relative permittivity different from that of the first dielectric material, formed inside the dielectric portion 71.

[0068] Furthermore, dielectric section 71 is mainly composed of a first dielectric material, and dielectric section 70 is mainly composed of a second dielectric material. Moreover, the phrase "A is mainly composed of B" means that B accounts for 50% or more by weight of the components constituting A.

[0069] The metal shielding plate 80 is a metal wall disposed on the dielectric section 70 and erected along the z-axis direction. The metal shielding plate 80 is set to ground potential. Specifically, the upper and lower ends of the metal shielding plate 80 are connected to through-hole conductors 96 formed in the dielectric section 71. The through-hole conductor 96 connected to the lower end of the metal shielding plate 80 is connected to the grounding terminal 150g. Furthermore, the through-hole conductor 96 connected to the upper end of the metal shielding plate 80 is connected to the grounding electrode 97 disposed on the main surface 91a. For a detailed description of the structure of the metal shielding plate 80, please refer to... Figures 4A to 4F To be described later.

[0070] Matching circuit 51 is an example of a first circuit component, disposed inside module substrate 91. Matching circuit 52 is an example of a second circuit component, disposed inside module substrate 91. Matching circuit 51 includes a first inductor connected to the output terminal of power amplifier 10, and matching circuit 52 includes a second inductor connected to the input terminal of low-noise amplifier 20.

[0071] Here, a metal shielding plate 80 is disposed in the dielectric section 70 between the first circuit component and the second circuit component.

[0072] Therefore, the metal shielding plate 80 is connected to the ground potential within the module substrate 91, thereby enhancing the electromagnetic field shielding function inside the module substrate 91. Furthermore, it is difficult to place the plate-shaped metal shielding plate 80 inside the module substrate 91 simultaneously with its formation. To address this, the dielectric portion 70 where the metal shielding plate 80 is disposed is formed of a dielectric material with a relative permittivity different from that of the dielectric portion 71 disposed on its outer side. That is, the process of disposing of the metal shielding plate 80 in the dielectric portion 70 can be a different process than the process of forming the module substrate 91 containing the dielectric portion 71. Therefore, the metal shielding plate 80 can be easily disposed inside the module substrate 91. Furthermore, the metal shielding plate 80 is disposed between the first circuit component and the second circuit component disposed inside the module substrate 91, thereby suppressing electromagnetic field coupling between the first and second circuit components. Therefore, strong signal interference between transmitted signals, between transmitted and received signals, and between received signals inside the module substrate 91 can be suppressed, thus suppressing degradation of the quality of transmitted and received signals.

[0073] Furthermore, it is preferable that the relative permittivity of the second dielectric material constituting the dielectric section 70 is lower than that of the first dielectric material constituting the dielectric section 71.

[0074] Therefore, interference from high-frequency signals in the dielectric section 70 can be suppressed compared to interference from high-frequency signals in the dielectric section 71.

[0075] Furthermore, the dielectric section 70 is preferably hollow.

[0076] Therefore, interference with high-frequency signals in the dielectric section 70 can be minimized, and the process of forming the dielectric section 70 can be simplified.

[0077] Furthermore, the first circuit component and the second circuit component disposed inside the module substrate 91 may also be composed of a conductor pattern formed on the dielectric portion 71.

[0078] This allows for the miniaturization of the high-frequency module 1A.

[0079] Furthermore, at least one of the first circuit component and the second circuit component disposed inside the module substrate 91 may also be a surface-mount electronic component or a semiconductor IC.

[0080] Therefore, electronic components with high Q values ​​or high-functionality semiconductor ICs are configured inside the module substrate, thus enabling miniaturization while improving the high-frequency performance of the high-frequency module 1A.

[0081] In addition, the first circuit component and the second circuit component may also be disposed in the dielectric section 70.

[0082] Therefore, the process of arranging the first circuit component, the second circuit component, and the metal shielding plate 80 in the dielectric section 70 can be made a different process from the process of forming the module substrate 91. Thus, surface-mount electronic components and semiconductor ICs, along with the metal shielding plate 80, can be easily arranged inside the module substrate 91.

[0083] The resin component 92 is disposed on the main surface 91a of the module substrate 91, covering at least a portion of the circuit components constituting the first and second transmitting circuits and the first and second receiving circuits, and the main surface 91a of the module substrate 91, and has the function of ensuring the mechanical strength and moisture resistance of the aforementioned circuit components. Furthermore, the resin component 92 is not an essential component of the high-frequency module of the present invention.

[0084] External connection terminals 150 are disposed on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with an external substrate disposed on the negative z-axis side of the high-frequency module 1A via multiple external connection terminals 150. Furthermore, the ground terminal 150g among the multiple external connection terminals 150 is set to the ground potential of the external substrate. Additionally, the external connection terminals 150 can be configured as follows: Figure 2 The figure shows a planar electrode formed on the main surface 91b. Alternatively, it can be a bump electrode formed on the main surface 91b.

[0085] A metal shielding layer 95 covers the surface of the resin component 92 and is set to a ground potential. The metal shielding layer 95 is, for example, a thin metal film formed by sputtering.

[0086] Alternatively, the metal shielding plate 80 can be connected to the metal shielding layer 95 via the via conductor 96 and the grounding conductor formed on the dielectric portion 71. This further enhances the electromagnetic field shielding function of the metal shielding plate 80.

[0087] Furthermore, in the high-frequency module 1A according to this embodiment, the power amplifier 10, switches 40 and 41, and duplexers 30 and 35 are disposed on the main surface 91a. On the other hand, the matching circuits 51 and 52, the low-noise amplifier 20, and the switch 42 are disposed inside the module substrate 91. The circuit components disposed on the main surface 91a are connected to the first circuit component and the second circuit component disposed inside the module substrate via the via conductor 96, and are also connected to the external connection terminal 150 disposed on the main surface 91b via the via conductor 96.

[0088] In addition, although Figure 2 Not shown in the diagram, but constitutes Figure 1The wiring for the transmission paths AT and BT and the reception paths AR and BR shown is formed inside the module substrate 91, on the main surfaces 91a and 91b. Furthermore, the wiring can be either bonding leads whose two ends are connected to either the main surfaces 91a and 91b or any of the circuit components constituting the high-frequency module 1A, or terminals, electrodes, or wiring formed on the surface of the circuit components constituting the high-frequency module 1A.

[0089] Furthermore, the low-noise amplifier 20, together with the switch 42, is included in the semiconductor IC 60 (the first semiconductor IC). This allows for a lower height of the high-frequency module 1A, reducing the component mounting area inside the module substrate 91. Alternatively, the semiconductor IC 60 may not include the switch 42. Furthermore, the semiconductor IC 60 may include at least one of switches 40 and 41.

[0090] In the above configuration, the low-noise amplifier 20 is an example of a second circuit component, disposed inside the module substrate 91. Here, the metal shielding plate 80 is disposed between the first inductor of the matching circuit 51 and the semiconductor IC 60.

[0091] Therefore, the metal shielding plate 80 can suppress electromagnetic field coupling between the transmitted signal transmitted in the first inductor and the received signal transmitted in the low-noise amplifier 20. Thus, strong signal interference between the transmitted and received signals inside the module substrate 91 can be suppressed, thereby preventing a decrease in receiver sensitivity.

[0092] Furthermore, the first and second circuit components disposed inside the module substrate 91 can also be any of the power amplifier 10, switches 40-42, duplexers 30 and 35, matching circuits 51 and 52, and low-noise amplifier 20 constituting the high-frequency module 1A. The first and second circuit components disposed inside the module substrate 91 can also be components disposed in the transmit path AT and receive path AR, respectively. Therefore, strong signal interference between the transmit and receive signals inside the module substrate 91 can be suppressed, thereby suppressing the decrease in receiver sensitivity.

[0093] Furthermore, the first and second circuit components disposed inside the module substrate 91 can also be components disposed on the transmit path AT and the transmit / receive path, respectively. Assuming that the first circuit component disposed on the transmit path AT and the second circuit component disposed on the transmit / receive path are electromagnetically coupled, harmonic components amplified by the power amplifier 10 may sometimes be transmitted from the antenna 2 without being removed by filters, resulting in a degraded transmit signal quality. The electromagnetic coupling is suppressed by the metal shielding plate 80, thereby suppressing the degradation of transmit signal quality.

[0094] Furthermore, the first and second circuit components disposed inside the module substrate 91 can also be components disposed in the receiving path AR and the transceiver path, respectively. Assuming that the first circuit component disposed in the receiving path AR and the second circuit component disposed in the transceiver path are electromagnetically coupled, the high-output transmit signal amplified by the power amplifier 10 and its harmonic components may sometimes flow into the receiving path AR, thus degrading the receiving sensitivity. By suppressing electromagnetic coupling through the metal shielding plate 80, the isolation between the transmitting and receiving circuits can be improved, thereby suppressing the degradation of the receiving sensitivity.

[0095] [3. Construction of Metal Shielding Plate]

[0096] Next, the structure of the metal shielding plate 80 of the high-frequency module 1A involved in this embodiment will be described.

[0097] Figure 4A This is a perspective view of the metal shielding plate 80A. The metal shielding plate 80A shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80A is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the metal shielding plate 80A and the dielectric section 71, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80A.

[0098] In addition, the metal shielding plate 80A has: a main body portion 81, disposed on the dielectric portion 70, and erected along the z-axis direction; and a joint portion 83, which extends parallel to the main surface 91a and is joined to the through-hole conductor 96 disposed on the dielectric portion 71.

[0099] According to the structure of the metal shielding plate 80A, a hole 82 is formed between the main body portion 81 and the dielectric portion 71. Therefore, during the process of forming the dielectric portion 70, good flowability of the liquid second dielectric material near the metal shielding plate 80A can be ensured. Thus, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80A. Furthermore, the metal shielding plate 80A and the via conductor 96 are joined by the joint portion 83, thereby improving the placement accuracy of the metal shielding plate 80A and the bonding strength between the metal shielding plate 80A and the via conductor 96.

[0100] Figure 4B This is a perspective view of the metal shielding plate 80B. The metal shielding plate 80B shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80B is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the metal shielding plate 80B and the dielectric section 71, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80B.

[0101] In addition, the metal shielding plate 80B has: a main body portion 81, disposed on the dielectric portion 70, and erected along the z-axis direction; and a joint portion 83, which extends parallel to the main surface 91a and is joined to the through-hole conductor 96 disposed on the dielectric portion 71.

[0102] According to the structure of the metal shielding plate 80B, a hole 82 is formed between the main body portion 81 and the dielectric portion 71. Therefore, during the process of forming the dielectric portion 70, good flowability of the liquid second dielectric material near the metal shielding plate 80B can be ensured. Thus, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80B. Furthermore, the metal shielding plate 80B and the via conductor 96 are joined by the joint portion 83, thereby improving the placement accuracy of the metal shielding plate 80B and the bonding strength between the metal shielding plate 80B and the via conductor 96.

[0103] Figure 4C This is a perspective view of the metal shielding plate 80C. The metal shielding plate 80C shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80C is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the upper and lower surfaces of the dielectric section 70, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80C.

[0104] Furthermore, the metal shielding plate 80C includes: a main body portion 81 disposed on the dielectric portion 70 and erected along the z-axis direction; and a connecting portion 83 extending parallel to the main surface 91a and connecting with the through-hole conductor 96 disposed on the dielectric portion 71. In the metal shielding plate 80C, a plurality of main body portions 81 are discretely arranged with respect to holes 82, and a plurality of connecting portions 83 are also discretely arranged with respect to holes 82.

[0105] According to the structure of the metal shielding plate 80C, holes 82 are formed between the multiple main body portions 81, thus ensuring good flowability of the liquid second dielectric material near the metal shielding plate 80C during the process of forming the dielectric portion 70. Therefore, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80C. Furthermore, the metal shielding plate 80C and the via conductor 96 are joined by the joint portion 83, thereby improving the placement accuracy of the metal shielding plate 80C and the bonding strength between the metal shielding plate 80C and the via conductor 96.

[0106] Figure 4DThis is a perspective view of the metal shielding plate 80D. The metal shielding plate 80D shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80D is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the upper and lower surfaces of the dielectric section 70, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80D.

[0107] Furthermore, the metal shielding plate 80D has: a main body portion 81 disposed on the dielectric portion 70 and erected along the z-axis direction; and a flat body end portion 87 disposed at the end of the main body portion 81 in a direction parallel to the main surface 91a, erected from the upper surface of the dielectric portion 70 toward the lower surface (in the z-axis direction). Here, the main body portion 81 and the body end portion 87 are not parallel.

[0108] According to the structure of the metal shielding plate 80D, holes 82 are formed between the multiple main body portions 81, thus ensuring good flowability of the liquid second dielectric material near the metal shielding plate 80D during the process of forming the dielectric portion 70. Therefore, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80D. In addition, the main body portions 81 and the main body ends 87 are not parallel, thus ensuring the self-supporting nature of the metal shielding plate 80D. Furthermore, the joint portions 83 present in the metal shielding plates 80A to 80C are absent, thus reducing the arrangement space of the metal shielding plates 80D.

[0109] Figure 4E This is a perspective view of the metal shielding plate 80E. The metal shielding plate 80E shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80E is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the upper and lower surfaces of the dielectric section 70, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80E.

[0110] Furthermore, the metal shielding plate 80E has: a main body portion 81 disposed on the dielectric portion 70 and erected along the z-axis direction; and a flat body end portion 87 disposed at the end of the main body portion 81 in a direction parallel to the main surface 91a, erected from the upper surface of the dielectric portion 70 toward the lower surface (in the z-axis direction). Here, the main body portion 81 and the body end portion 87 are not parallel.

[0111] According to the structure of the metal shielding plate 80E, holes 82 are formed between the multiple main body portions 81, thus ensuring good flowability of the liquid second dielectric material near the metal shielding plate 80E during the process of forming the dielectric portion 70. Therefore, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80E. In addition, the main body portions 81 and the main body ends 87 are not parallel, thus ensuring the self-supporting nature of the metal shielding plate 80E. Furthermore, the joint portions 83 present in the metal shielding plates 80A to 80C are absent, thus reducing the arrangement space of the metal shielding plates 80E.

[0112] Figure 4F This is a perspective view of the metal shielding plate 80F. The metal shielding plate 80F shown in this figure is an example of the metal shielding plate 80 according to the embodiment. The metal shielding plate 80F is disposed on the dielectric section 70 and is erected along the z-axis direction. A hole 82 is formed between the upper and lower surfaces of the dielectric section 70, penetrating in the normal direction (x-axis direction) of the metal shielding plate 80F.

[0113] Furthermore, the metal shielding plate 80F has: a main body portion 81 disposed on the dielectric portion 70 and erected along the z-axis direction; and a flat body end portion 87 disposed at the end of the main body portion 81 in a direction parallel to the main surface 91a, erected from the upper surface of the dielectric portion 70 toward the lower surface (in the z-axis direction). Here, the main body portion 81 and the body end portion 87 are not parallel.

[0114] According to the structure of the metal shielding plate 80F, holes 82 are formed between the multiple main body portions 81, thus ensuring good flowability of the liquid second dielectric material near the metal shielding plate 80F during the process of forming the dielectric portion 70. Therefore, the generation of voids where the second dielectric material is not formed can be suppressed near the metal shielding plate 80F. In addition, the main body portions 81 and the main body ends 87 are not parallel, thus ensuring the self-supporting nature of the metal shielding plate 80F. Furthermore, the joint portions 83 present in the metal shielding plates 80A to 80C are absent, thus reducing the arrangement space of the metal shielding plates 80F.

[0115] Furthermore, the construction examples of the metal shielding plate 80 are not limited to the metal shielding plates 80A to 80F described above. For example, multiple holes 82 may be arranged from the lower surface of the dielectric portion 70 toward the upper surface. Moreover, the direction in which the joint portion 83 extends is not limited to... Figures 4A to 4F The negative x-axis direction shown can also be the positive x-axis direction. Furthermore, the metal shielding plate 80 can also have both a joint portion 83 extending in the negative x-axis direction and a joint portion 83 extending in the positive x-axis direction.

[0116] [4. Effects, etc.]

[0117] The high-frequency module 1A according to this embodiment includes a module substrate 91, a first circuit component and a second circuit component disposed inside the module substrate 91, and a metal shielding plate 80 set to ground potential. The module substrate 91 has a dielectric portion 71 containing a first dielectric material and a dielectric portion 70 containing a second dielectric material with a relative permittivity different from that of the first dielectric material and formed inside the dielectric portion 71. The metal shielding plate 80 is disposed between the first circuit component and the second circuit component in the dielectric portion 70.

[0118] Therefore, the process of placing the metal shielding plate 80 on the dielectric section 70 can be a different process from the process of forming the module substrate 91 containing the dielectric section 71. Thus, the metal shielding plate 80 can be easily placed inside the module substrate 91. Furthermore, since the metal shielding plate 80 is placed between the first circuit component and the second circuit component disposed inside the module substrate 91, electromagnetic field coupling between the first and second circuit components can be suppressed. Therefore, strong signal interference between transmitted signals, between transmitted and received signals, and between received signals inside the module substrate 91 can be suppressed, thereby suppressing the degradation of the quality of transmitted and received signals.

[0119] Furthermore, in the high-frequency module 1A, the relative permittivity of the second dielectric material can also be lower than that of the first dielectric material.

[0120] Therefore, interference from high-frequency signals in the dielectric section 70 can be suppressed compared to interference from high-frequency signals in the dielectric section 71.

[0121] Furthermore, in the high-frequency module 1A, the dielectric section 70 can also be void.

[0122] Therefore, interference with high-frequency signals in the dielectric section 70 can be minimized, and the process of forming the dielectric section 70 can be simplified.

[0123] Furthermore, in the high-frequency module 1A, at least one of the first circuit component and the second circuit component may be a surface-mount electronic component or a semiconductor IC.

[0124] Therefore, electronic components with high Q values ​​or high-functionality semiconductor ICs are arranged inside the module substrate, thus enabling miniaturization while improving the high-frequency performance of the high-frequency module 1A.

[0125] Furthermore, in the high-frequency module 1A, the first circuit component and the second circuit component may also be disposed in the dielectric section 70.

[0126] Therefore, the process of arranging the first circuit component, the second circuit component, and the metal shielding plate 80 in the dielectric section 70 can be made a different process from the process of forming the module substrate 91. Thus, surface-mount electronic components and semiconductor ICs, along with the metal shielding plate 80, can be easily arranged inside the module substrate 91.

[0127] Alternatively, the high-frequency module 1A may also include a power amplifier 10 and a low-noise amplifier 20, with a first circuit component being a first inductor connected to the output terminal of the power amplifier 10 and a second circuit component being a second inductor connected to the input terminal of the low-noise amplifier 20.

[0128] Therefore, the metal shielding plate 80 can suppress electromagnetic field coupling between the transmitted signal transmitted through the first inductor and the received signal transmitted through the second inductor. Thus, strong signal interference between the transmitted and received signals within the module substrate 91 can be suppressed, thereby preventing a decrease in receiving sensitivity.

[0129] Alternatively, the high-frequency module 1A may also include a power amplifier 10, a first circuit component being a first inductor connected to the output terminal of the power amplifier 10, a second circuit component being a low-noise amplifier 20, the low-noise amplifier 20 being contained in a semiconductor IC 60, and a metal shielding plate 80 being disposed between the first inductor and the semiconductor IC 60.

[0130] Therefore, the metal shielding plate 80 can suppress electromagnetic field coupling between the transmitted signal transmitted in the first inductor and the received signal transmitted in the low-noise amplifier 20. Thus, strong signal interference between the transmitted and received signals inside the module substrate 91 can be suppressed, thereby preventing a decrease in receiver sensitivity.

[0131] Furthermore, in the high-frequency module 1A, the first circuit component may be configured in any of the transmission path for transmitting a transmitted signal, the reception path for transmitting a received signal, and the transceiver path for transmitting and receiving signals, and the second circuit component may be configured in any of the transmission path, the reception path, and the transceiver path other than the path in which the first circuit component is configured.

[0132] Therefore, strong signal interference between the transmitted and received signals inside the module substrate 91 can be suppressed, thereby suppressing the degradation of the transmitted signal quality and the degradation of the received sensitivity.

[0133] Furthermore, in the high-frequency module 1A, the metal shielding plate 80 may also have: a main body 81, which is erected along a direction perpendicular to the main surface 91a of the module substrate 91; and a joint 83, which extends parallel to the main surface 91a.

[0134] Thus, the metal shielding plate 80 and the via conductor 96 are joined by the joint 83, thereby improving the configuration accuracy of the metal shielding plate 80 and the joint strength between the metal shielding plate 80 and the via conductor 96.

[0135] Alternatively, in the high-frequency module 1A, the metal shielding plate 80 may have: a main body portion 81, which is erected along a direction perpendicular to the main surface 91a of the module substrate 91; and a flat body end portion 87, which is disposed at the end of the main body portion 81 in a direction parallel to the main surface 91a, wherein the main body portion 81 and the body end portion 87 are not parallel.

[0136] Therefore, the main body 81 and the main body end 87 are not parallel, thus ensuring the self-supporting nature of the metal shielding plate 80. Furthermore, the absence of a joint 83 reduces the space required for the metal shielding plate 80 to be installed.

[0137] Furthermore, in the high-frequency module 1A, a hole 82 that penetrates in the normal direction of the metal shielding plate 80 may be formed between the end of the metal shielding plate 80 and the dielectric part 71.

[0138] Therefore, during the process of forming the dielectric section 70, good flowability of the liquid second dielectric material near the metal shielding plate 80 can be ensured. Consequently, the generation of voids or other defects in the second dielectric material near the metal shielding plate 80 can be suppressed.

[0139] In addition, the communication device 5 includes: RFIC3, which processes high-frequency signals transmitted and received by antenna 2; and high-frequency module 1, which transmits high-frequency signals between antenna 2 and RFIC3.

[0140] Therefore, a communication device 5 can be provided that suppresses the degradation of the quality of the transmitted or received signal.

[0141] (Other implementation methods, etc.)

[0142] The above description, including embodiments, examples, and modifications, illustrates the high-frequency module and communication device of the present invention. However, the high-frequency module and communication device of the present invention are not limited to the above embodiments, examples, and modifications. Other embodiments implemented by combining any of the constituent elements in the above embodiments, examples, and modifications; modifications obtained by implementing the above embodiments, examples, and modifications in accordance with the spirit of the present invention; and various devices that incorporate the above high-frequency module and communication device are also included in the present invention.

[0143] For example, in the high-frequency module 1A of the embodiment, each circuit component constituting the high-frequency module 1A is disposed on a single main surface 91a of the module substrate 91, but each circuit component may also be separately disposed on the opposing main surfaces 91a and 91b of the module substrate 91. That is, each circuit component constituting the high-frequency module 1A may be mounted on one side of the module substrate, or it may be mounted on both sides of the module substrate.

[0144] For example, in the high-frequency modules and communication devices described in the above embodiments, examples and variations, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings.

[0145] Industrial availability

[0146] This invention can be widely used as a high-frequency module configured in the front end to handle multiple frequency bands in communication devices such as portable telephones.

[0147] Explanation of reference numerals in the attached figures

[0148] 1. 1A high-frequency module;

[0149] 2 antennas;

[0150] 3. RF signal processing circuit (RFIC);

[0151] 4. Baseband signal processing circuit (BBIC);

[0152] 5 communication devices;

[0153] 10. Power amplifier;

[0154] 20 Low-noise amplifiers;

[0155] 30, 35 duplexers;

[0156] 31, 33 Transmit filters;

[0157] 32, 34 Receiver filters;

[0158] Switches 40, 41, and 42;

[0159] 40a, 41a, 42a Common Terminals;

[0160] 40b, 40c, 41b, 41c, 42b, 42c select terminals;

[0161] Matching circuits 51 and 52;

[0162] 60 Semiconductor ICs;

[0163] 70, 71 Dielectric section;

[0164] Metal shielding plates of types 80, 80A, 80B, 80C, 80D, 80E, and 80F;

[0165] 81. Main body section;

[0166] 82 holes;

[0167] 83 Joint;

[0168] 87. Main body end;

[0169] 91 Module baseboard;

[0170] 91a and 91b are the main faces;

[0171] 92. Resin components;

[0172] 95. Metal shielding layer;

[0173] 96. Via conductor;

[0174] 97. Grounding electrode;

[0175] 100 Antenna Connection Terminal;

[0176] 110 Transmit input terminal;

[0177] 120 Receive / Output Terminal;

[0178] 150 External connection terminals;

[0179] 150g grounding terminal;

[0180] AR and BR receiving paths;

[0181] AT and BT transmission paths;

[0182] CTR send / receive path.

Claims

1. A high-frequency module comprising: a module substrate; a first circuit component and a second circuit component disposed inside the module substrate; and a metal shield plate set to a ground potential, wherein the module substrate has: a first dielectric portion including a first dielectric material; and a second dielectric portion including a second dielectric material having a relative permittivity different from that of the first dielectric material, formed inside the first dielectric portion, wherein the first circuit component and the second circuit component are disposed in the second dielectric portion, and wherein the metal shield plate is disposed in the second dielectric portion and between the first circuit component and the second circuit component.

2. The high-frequency module according to claim 1, wherein a relative permittivity of the second dielectric material is lower than a relative permittivity of the first dielectric material.

3. The high-frequency module according to claim 2, wherein the second dielectric portion is a hollow.

4. The high-frequency module according to any one of claims 1 to 3, wherein at least one of the first circuit component and the second circuit component is a surface-mounted electronic component or a semiconductor IC.

5. The high-frequency module according to any one of claims 1 to 3, further comprising: a power amplifier; and a low-noise amplifier, wherein the first circuit component is a first inductor connected to an output terminal of the power amplifier, and the second circuit component is a second inductor connected to an input terminal of the low-noise amplifier.

6. The high-frequency module according to any one of claims 1 to 3, further comprising a power amplifier, wherein the first circuit component is a first inductor connected to an output terminal of the power amplifier, the second circuit component is a low-noise amplifier, the low-noise amplifier is included in a first semiconductor IC, and the metal shield plate is disposed between the first inductor and the first semiconductor IC.

7. The high-frequency module according to any one of claims 1 to 3, wherein the first circuit component is disposed in any one of a transmission path that transmits a transmission signal, a reception path that transmits a reception signal, and a transceiving path that transmits the transmission signal and the reception signal, and the second circuit component is disposed in any one of the paths other than the path in which the first circuit component is disposed.

8. The high-frequency module according to any one of claims 1 to 3, wherein the metal shield plate has: a main body portion vertically disposed in a direction perpendicular to a main surface of the module substrate; and a joint portion extending in parallel with the main surface.

9. The high-frequency module according to any one of claims 1 to 3, wherein the metal shield plate has: a main body portion vertically disposed in a direction perpendicular to a main surface of the module substrate; and a flat plate-shaped main body end portion disposed at an end portion of the main body portion in a direction parallel to the main surface, wherein the main body portion and the main body end portion are not parallel.

10. The high-frequency module according to any one of claims 1 to 3, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ A hole that penetrates in the normal direction of the metal shield plate is formed between the end of the metal shield plate and the first dielectric portion.

11. A communication device comprising: RF signal processing circuitry that processes high-frequency signals received / transmitted by an antenna; and The high-frequency module according to any one of claims 1 to 10, wherein the high-frequency signals are propagated between the antenna and the RF signal processing circuitry.

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