High frequency module

Abstract

The high-frequency module (1) comprises: a power amplifier (11); a power amplifier (12); a low-noise amplifier (21); a duplexer (61) having a passband including a communication frequency band A included in a communication frequency band group X and connected to the power amplifier (11) and the low-noise amplifier (21); a duplexer (63) having a passband including a communication frequency band C included in a communication frequency band group Y on a lower frequency side than the communication frequency band group X and connected to the power amplifier (12); and a module substrate (91) on which the power amplifier (11), the power amplifier (12), the low-noise amplifier (21), and the duplexers (61 and 63) are arranged, wherein, when viewed from above the module substrate (91), a distance (d1) between the power amplifier (11) and the low-noise amplifier (21) is longer than a distance (d2) between the power amplifier (12) and the low-noise amplifier (21).

Description

Technical Field

[0001] The invention relates to a high frequency module. Background Art

[0002] In mobile communication devices such as cellular phones, the layout of circuit components constituting a high-frequency front-end module has become complicated, especially as multi-band is developed. Patent document 1 discloses a front-end module in which a power amplifier, a switch, a filter, etc. are packaged.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2015 / 0133067 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In such a conventional front-end module, there is a concern about degradation of electrical characteristics (for example, noise figure (NF), gain characteristics, etc.).

[0008] Therefore, the present invention provides a high-frequency module capable of improving electrical characteristics.

[0009] Means used to solve problems

[0010] A high-frequency module of one embodiment of the present invention comprises: a first power amplifier; a second power amplifier; a first low-noise amplifier; a first filter, which has a passband including a first communication frequency band included in a first communication frequency band group and is connected to the first power amplifier and the first low-noise amplifier; a second filter, which has a passband including a second communication frequency band included in a second communication frequency band group that is closer to the low-frequency side than the first communication frequency band group and is connected to the second power amplifier; and a module substrate, which is configured with the first power amplifier, the second power amplifier, the first low-noise amplifier, the first filter and the second filter, and when viewed from above the module substrate, the distance between the first power amplifier and the first low-noise amplifier is longer than the distance between the second power amplifier and the first low-noise amplifier.

[0011] Effects of the Invention

[0012] According to the high-frequency module of one aspect of the present invention, electrical characteristics can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0014] Figure 2It is a top view of the high-frequency module according to the embodiment.

[0015] Figure 3 It is a cross-sectional view of a high-frequency module according to the embodiment. DETAILED DESCRIPTION

[0016] Hereinafter, the embodiments of the present invention will be described in detail using the accompanying drawings. It should be noted that the embodiments described below are all inclusive or specific examples. The values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments are examples and do not limit the subject matter of the present invention.

[0017] It should be noted that each figure is a schematic diagram that appropriately emphasizes, omits, or adjusts the ratio in order to illustrate the present invention, and is not necessarily a strictly illustrated figure, and sometimes differs from the actual shape, positional relationship, and ratio. In each figure, the same reference numeral is used for substantially the same structure, and repeated descriptions are sometimes omitted or simplified.

[0018] In the following figures, the x-axis and the y-axis are axes that are orthogonal to each other on a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape in a plan view, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side orthogonal to the first side of the module substrate. In addition, the z-axis is an axis perpendicular to the main surface of the module substrate, and its positive direction indicates the upward direction, and its negative direction indicates the downward direction.

[0019] In the circuit structure of the present invention, "connection" includes not only direct connection through connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. In addition, "connection between A and B" means connection between A and B to both A and B.

[0020] In the component configuration of the present invention, "the top view of the module substrate" refers to the observation of the object by orthogonally projecting it onto the xy plane from the positive side of the z-axis. In addition, "the distance between A and B in the top view of the module substrate" refers to the length of the line segment connecting the representative point in the area of ​​A projected onto the xy plane with the representative point in the area of ​​B. Here, as a representative point, the center point of the area or the point closest to the other area can be used, but it is not limited to this. In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, terms such as "rectangular" that indicate the shape of an element, and numerical ranges do not only have strict meanings, but also include substantially equivalent ranges, such as errors of several percent.

[0021] In addition, "arranging a component on a substrate" includes not only arranging a component on a substrate in contact with the substrate, but also arranging a component above the substrate without contact with the substrate (for example, stacking a component on other components arranged on the substrate), and arranging a component by partially or completely embedding the component in the substrate. In addition, "arranging a component on a main surface of a substrate" includes not only arranging a component on the main surface in contact with the main surface of the substrate, but also arranging a component above the main surface without contact with the main surface, and arranging a component by partially embedding the component in the substrate from the main surface side.

[0022] (Implementation Method)

[0023] [1.1 Circuit Structure of High Frequency Module 1 and Communication Device 5]

[0024] Reference Figure 1 The circuit configurations of the high-frequency module 1 and the communication device 5 according to the present embodiment will be described. Figure 1 It is a circuit configuration diagram of the high-frequency module 1 and the communication device 5 according to the embodiment.

[0025] [1.1.1 Circuit Structure of Communication Device 5]

[0026] First, the circuit structure of the communication device 5 is described. Figure 1 As shown, the communication device 5 of the present embodiment includes a high-frequency module 1 , antennas 2A and 2B, an RFIC 3 , and a BBIC 4 .

[0027] The high frequency module 1 transmits a high frequency signal between the antennas 2A and 2B and the RFIC 3. The internal structure of the high frequency module 1 will be described below.

[0028] The antennas 2A and 2B are connected to the antenna connection terminals 101 and 102 of the high frequency module 1 , respectively, and transmit high frequency signals output from the high frequency module 1 , and receive high frequency signals from the outside and output them to the high frequency module 1 .

[0029] RFIC3 is an example of a signal processing circuit that processes a high-frequency signal. Specifically, RFIC3 performs signal processing on a high-frequency receiving signal input through the receiving path of the high-frequency module 1 by down-conversion, etc., and outputs the receiving signal generated by the signal processing to BBIC4. In addition, RFIC3 performs signal processing on a transmitting signal input from BBIC4 by up-conversion, etc., and outputs the high-frequency transmitting signal generated by the signal processing to the transmitting path of the high-frequency module 1. In addition, RFIC3 has a control unit that controls switches and amplifiers of the high-frequency module 1. It should be noted that part or all of the functions of the control unit of RFIC3 can also be installed outside RFIC3, for example, it can also be installed on BBIC4 or the high-frequency module 1.

[0030] BBIC 4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band lower than the high frequency signal transmitted by high frequency module 1. As the signal processed by BBIC 4, for example, an image signal for image display and / or an audio signal for communication via a speaker are used.

[0031] It should be noted that, in the communication device 5 of the present embodiment, the antennas 2A and 2B and the BBIC 4 are not essential components.

[0032] [1.1.2 Circuit structure of high-frequency module 1]

[0033] Next, the circuit structure of the high frequency module 1 is described. Figure 1 As shown, the high frequency module 1 includes power amplifiers 11 and 12, low noise amplifiers 21 and 22, switches 51 to 55, duplexers 61 and 63, transmission and reception filters 62 and 64, antenna connection terminals 101 and 102, high frequency input terminals 111 and 112, and high frequency output terminals 121 and 122.

[0034] Antenna connection terminals 101 and 102 are connected to antennas 2A and 2B, respectively.

[0035] The high-frequency input terminals 111 and 112 are terminals for receiving high-frequency transmission signals from the outside of the high-frequency module 1. In the present embodiment, the high-frequency input terminal 111 is a terminal for receiving transmission signals of communication bands A and B included in the communication band group X from RFIC3. The high-frequency input terminal 112 is a terminal for receiving transmission signals of communication bands C and D included in the communication band group Y from RFIC3.

[0036] The high-frequency output terminals 121 and 122 are terminals for providing high-frequency reception signals to the outside of the high-frequency module 1. In the present embodiment, the high-frequency output terminal 121 is a terminal for providing reception signals of communication bands A and B included in the communication band group X to RFIC3. The high-frequency output terminal 122 is a terminal for providing reception signals of communication bands C and D included in the communication band group Y to RFIC3.

[0037] The communication frequency band refers to a frequency band pre-defined for a communication system by a standardization organization (for example, 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)).

[0038] Here, the communication system refers to a communication system constructed using a radio access technology (RAT). As a communication system, for example, a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, and a WLAN (Wireless Local Area Network) system can be used, but it is not limited thereto.

[0039] A communication band group refers to a frequency range including multiple communication bands. As a communication band group, for example, an ultra-high frequency band group (3300-5000 MHz), a high frequency band group (2300-2690 MHz), a medium frequency band group (1427-2200 MHz), and a low frequency band group (698-960 MHz) can be used, but are not limited thereto. For example, as a communication band group, a communication band group including an unlicensed band of 5 GHz or more or a communication band group of a millimeter wave band can also be used.

[0040] The communication band group X is an example of the first communication band group. The communication band group Y is an example of the second communication band group, which is lower than the communication band group X. As the communication band groups X and Y, for example, a high frequency band group and a medium frequency band group can be used, but not limited to this. For example, as the communication band groups X and Y, a medium frequency band group and a low frequency band group can also be used, and a high frequency band group and a low frequency band group can also be used.

[0041] Communication band A is an example of a first communication band. In the present embodiment, a communication band for frequency division duplex (FDD) is used as communication band A. More specifically, Band 7 for LTE or n7 for 5GNR is used as communication band A, but communication band A is not limited thereto.

[0042] Communication band B is an example of the first communication band or the third communication band. In the present embodiment, a communication band for time division duplex (TDD) is used as communication band B. More specifically, Band 41 or Band 40 for LTE, or n41 or n40 for 5GNR is used as communication band B, but communication band B is not limited thereto.

[0043] Communication band C is an example of a second communication band. In this embodiment, as communication band C, a communication band for FDD is used. More specifically, as communication band C, Band 1, Band 25, Band 3, or Band 66 for LTE, or n1, n25, n3, or n66 for 5GNR is used, but communication band C is not limited thereto. It should be noted that communication band C can also communicate with communication band A and / or B simultaneously.

[0044] Communication band D is an example of the second communication band or the fourth communication band. In this embodiment, as communication band D, a communication band for TDD is used. More specifically, as communication band D, Band 34 or Band 39 for LTE, or n34 or n39 for 5GNR is used, but communication band D is not limited thereto. It should be noted that communication band D can also communicate with communication band A and / or B simultaneously.

[0045] The power amplifier 11 is an example of a first power amplifier, and can amplify transmission signals of communication bands A and B received by the high frequency input terminal 111 . Here, the input of the power amplifier 11 is connected to the high frequency input terminal 111 , and the output of the power amplifier 11 is connected to the switch 52 .

[0046] The power amplifier 12 is an example of a second power amplifier, and can amplify transmission signals of communication bands C and D received by the high frequency input terminal 112 . Here, the input of the power amplifier 12 is connected to the high frequency input terminal 112 , and the output of the power amplifier 12 is connected to the switch 54 .

[0047] The structures of the power amplifiers 11 and 12 are not particularly limited. For example, the power amplifiers 11 and / or 12 may be single-stage structures or multi-stage structures. For example, the power amplifiers 11 and / or 12 may also have a plurality of amplifier elements connected in cascade. In addition, the power amplifiers 11 and / or 12 may also convert high-frequency signals into differential signals (i.e., complementary signals) and amplify them. Such power amplifiers 11 and / or 12 are sometimes referred to as differential amplifiers.

[0048] The low noise amplifier 21 is an example of a first low noise amplifier, and can amplify reception signals of communication bands A and B received by the antenna connection terminal 101 or 102 . The reception signals of communication bands A and B amplified by the low noise amplifier 21 are output to the high frequency output terminal 121 .

[0049] The low noise amplifier 22 is an example of a second low noise amplifier, and can amplify reception signals of communication bands C and D received by the antenna connection terminal 101 or 102 . The reception signals of communication bands C and D amplified by the low noise amplifier 22 are output to the high frequency output terminal 122 .

[0050] The structure of each of the low noise amplifiers 21 and 22 is not particularly limited. For example, the low noise amplifiers 21 and / or 22 may be either a single-stage structure or a multi-stage structure, or may be a differential amplifier.

[0051] The duplexer 61 is an example of a first filter, and passes a high frequency signal of the communication band A. The duplexer 61 transmits a transmission signal and a reception signal of the communication band A in an FDD manner. The duplexer 61 includes a transmission filter 61T and a reception filter 61R.

[0052] The transmission filter 61T is an example of a first transmission filter, and has a passband including an uplink operating band of the communication band A. One end of the transmission filter 61T is connected to the antenna connection terminal 101 or 102 via the switch 51. The other end of the transmission filter 61T is connected to the output of the power amplifier 11 via the switch 52.

[0053] The uplink operating frequency band refers to a part of the communication frequency band designated for uplink. In the high frequency module 1, the uplink operating frequency band refers to a transmission frequency band.

[0054] The reception filter 61R is an example of a first reception filter, and has a passband including a downlink operating band of the communication band A. One end of the reception filter 61R is connected to the antenna connection terminal 101 or 102 via the switch 51 . The other end of the reception filter 61R is connected to the input of the low noise amplifier 21 via the switch 53 .

[0055] The downlink operating frequency band refers to a part of a communication frequency band designated for downlink. In the high frequency module 1, the downlink operating frequency band refers to a reception frequency band.

[0056] The transceiver filter 62 is an example of the first filter or the third filter, and has a passband including the communication frequency band B. One end of the transceiver filter 62 is connected to the antenna connection terminal 101 or 102 via the switch 51. The other end of the transceiver filter 62 is connected to the output of the power amplifier 11 via the switch 52, and is connected to the input of the low noise amplifier 21 via the switches 52 and 53.

[0057] The duplexer 63 is an example of a second filter, and passes a high frequency signal of the communication band C. The duplexer 63 transmits a transmission signal and a reception signal of the communication band C in an FDD manner. The duplexer 63 includes a transmission filter 63T and a reception filter 63R.

[0058] The transmission filter 63T is an example of a second transmission filter, and has a passband including the uplink operating frequency band of the communication frequency band C. One end of the transmission filter 63T is connected to the antenna connection terminal 101 or 102 via the switch 51 . The other end of the transmission filter 63T is connected to the output of the power amplifier 12 via the switch 54 .

[0059] The reception filter 63R is an example of a second reception filter, and has a passband including the downlink operating frequency band of the communication band C. One end of the reception filter 63R is connected to the antenna connection terminal 101 or 102 via the switch 51 . The other end of the reception filter 63R is connected to the input of the low noise amplifier 22 via the switch 55 .

[0060] The transceiver filter 64 is an example of the second filter or the fourth filter, and has a passband including the communication frequency band D. One end of the transceiver filter 64 is connected to the antenna connection terminal 101 or 102 via the switch 51. The other end of the transceiver filter 64 is connected to the output of the power amplifier 12 via the switch 54, and is connected to the input of the low noise amplifier 22 via the switches 54 and 55.

[0061] The switch 51 is an example of a first switch. The switch 51 has terminals 511 to 516. The terminals 511 and 512 are connected to the antenna connection terminals 101 and 102, respectively. The terminals 513 to 516 are connected to the duplexer 61, the transceiver filter 62, the duplexer 63, and the transceiver filter 64, respectively.

[0062] In this connection structure, the switch 51 can connect at least one of the terminals 513 to 516 to the terminal 511 or 512 based on a control signal from the RFIC 3, for example. That is, the switch 51 can switch between the connection and non-connection between the antennas 2A and 2B and the duplexers 61 and 63, and between the antennas 2A and 2B and the transceiver filters 62 and 64. The switch 51 is composed of, for example, a multi-connection type switch circuit, and is called an antenna switch.

[0063] The switch 52 is an example of a second switch. The switch 52 has terminals 521 to 524. The terminals 521 and 522 are connected to the transmission filter 61T and the transmission / reception filter 62, respectively. The terminal 523 is connected to the output of the power amplifier 11. The terminal 524 is connected to the terminal 532 of the switch 53 and is connected to the input of the low noise amplifier 21 via the switch 53.

[0064] In this connection structure, the switch 52 can connect the terminal 521 to the terminal 523, and can connect the terminal 522 to either the terminal 523 or the terminal 524, based on a control signal from the RFIC 3, for example. That is, the switch 52 can switch the connection and disconnection between the transmission filter 61T and the power amplifier 11, and can switch the connection and disconnection between the transmission and reception filter 62 and the power amplifier 11 and the low noise amplifier 21, respectively. The switch 52 is composed of, for example, a multi-connection type switch circuit.

[0065] The switch 53 is an example of a third switch. The switch 53 has terminals 531 to 533. The terminal 531 is connected to the input of the low noise amplifier 21. The terminal 532 is connected to the terminal 524 of the switch 52 and connected to the transmission / reception filter 62 via the switch 52. The terminal 533 is connected to the reception filter 61R.

[0066] In this connection structure, the switch 53 can connect the terminal 532 and / or 533 to the terminal 531 based on a control signal from the RFIC 3, for example. That is, the switch 53 can switch the connection and disconnection between the receiving filter 61R and the low noise amplifier 21, and can switch the connection and disconnection between the transmitting and receiving filter 62 and the low noise amplifier 21. The switch 53 is composed of a multi-connection type switch circuit, for example.

[0067] The switch 54 is an example of a second switch. The switch 54 has terminals 541 to 544. The terminals 541 and 542 are connected to the transmission filter 63T and the transmission / reception filter 64, respectively. The terminal 543 is connected to the output of the power amplifier 12. The terminal 544 is connected to the terminal 552 of the switch 55, and is connected to the input of the low noise amplifier 22 via the switch 55.

[0068] In this connection structure, the switch 54 can connect the terminal 541 to the terminal 543, and the terminal 542 to either the terminal 543 or the terminal 544, based on a control signal from the RFIC 3, for example. That is, the switch 54 can switch the connection and disconnection between the transmission filter 63T and the power amplifier 12, and can switch the connection and disconnection between the transmission and reception filter 64 and the power amplifier 12 and the low noise amplifier 22, respectively. The switch 54 is composed of, for example, a multi-connection type switch circuit.

[0069] The switch 55 is an example of a third switch. The switch 55 has terminals 551 to 553. The terminal 551 is connected to the input of the low noise amplifier 22. The terminal 552 is connected to the terminal 544 of the switch 54, and is connected to the transmission and reception filter 64 via the switch 54. The terminal 553 is connected to the reception filter 63R.

[0070] In this connection structure, the switch 55 can connect the terminal 552 and / or 553 to the terminal 551 based on a control signal from the RFIC 3, for example. That is, the switch 55 can switch the connection and disconnection between the receiving filter 63R and the low noise amplifier 22, and switch the connection and disconnection between the transmitting and receiving filter 64 and the low noise amplifier 22. The switch 55 is composed of a multi-connection type switch circuit, for example.

[0071] It should be noted that Figure 1 Some of the circuit elements shown may not be included in the high-frequency module 1. For example, the high-frequency module 1 may include at least the power amplifiers 11 and 12, the switch 51, the transmission filter 61T or the transmission / reception filter 62, and the transmission filter 63T or the transmission / reception filter 64, and may not include other circuit elements.

[0072] [1.2 Component Configuration of High Frequency Module 1]

[0073] Next, refer to Figure 2 and Figure 3 Component arrangement of the high-frequency module 1 configured as described above will be described in detail.

[0074] Figure 2 is a top view of the high frequency module 1 according to the embodiment. Specifically, Figure 2 FIG. 1 shows a diagram of a main surface 91 a of a module substrate 91 viewed from the positive z-axis side. Figure 3 It is a cross-sectional view of the high-frequency module 1 according to the embodiment. Figure 3 The cross section of the high frequency module 1 is Figure 2 The cross section at line iii-iii.

[0075] like Figure 2 and Figure 3 As shown, the high frequency module 1 includes Figure 1 In addition to the circuit components of the circuit element shown in FIG. 1 , the module substrate 91, the resin member 92, the ground conductors 93 and 94, the shield electrode layer 95, and a plurality of external connection terminals 150 are provided. Figure 2 In the figure, the upper part of the resin member 92 and the shield electrode layer 95 are omitted.

[0076] The module substrate 91 has main surfaces 91a and 91b facing each other. In the present embodiment, the module substrate 91 has a rectangular shape in a plan view, but the shape of the module substrate 91 is not limited thereto. As the module substrate 91, for example, a low temperature co-fired ceramic (LTCC: Low Temperature Co-fired Ceramics) substrate having a stacked structure of a plurality of dielectric layers, a high temperature co-fired ceramic (HTCC: High Temperature Co-fired Ceramics) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed substrate can be used, but it is not limited thereto.

[0077] The main surface 91 a is an example of a first main surface and is sometimes referred to as an upper surface or a surface. The main surface 91 a is divided into three regions R1 , R2 , and R3 by ground conductors 93 and 94 .

[0078] The ground conductors 93 and 94 are respectively connected to a ground electrode pattern (not shown) in the module substrate 91 and are set to a ground potential. The ground conductors 93 and 94 are respectively protruded from the main surface 91a.

[0079] The ground conductor 93 is a metal wall that stands on the main surface 91 a and extends along the y-axis. The ground conductor 93 partitions the regions R1 and R2 . The top end and side edge of the ground conductor 93 are bonded to the shield electrode layer 95 .

[0080] The ground conductor 94 is a metal wall that stands on the main surface 91a. The ground conductor 94 includes a metal wall 941 extending along the x-axis and a metal wall 942 that is connected to the metal wall 941 and extends along the y-axis. The ground conductor 94 separates the regions R2 and R3. The top end and the side edge of the ground conductor 94 are connected to the shielding electrode layer 95.

[0081] Region R1 is an example of the first region. Power amplifiers 11 and 12, and switches 52 and 54 are arranged in region R1. Switch 52 is arranged near power amplifier 11 and between power amplifier 11 and switch 51. The distance between switch 52 and power amplifier 11 is shorter than the distance between power amplifier 11 and transceiver filter 62. Switch 54 is arranged near power amplifier 12 and between power amplifier 12 and switch 51. The distance between switch 54 and power amplifier 12 is shorter than the distance between power amplifier 12 and transceiver filter 64.

[0082] Region R2 is an example of the second region. In region R2, switch 51, transmission filters 61T and 63T, reception filters 61R and 63R, and transmission and reception filters 62 and 64 are configured. The number of filters for FDD (transmission filters 61T and 63T and reception filters 61R and 63R) is greater than the number of filters for TDD (transmission and reception filters 62 and 64). Transmission and reception filter 62 is configured between power amplifier 11 and switch 51. Transmission and reception filter 64 is configured between power amplifier 12 and switch 51. Transmission filter 61T and reception filters 61R and 63R are configured near switch 51.

[0083] The switch 51 is arranged between the transmission filters 61T and 61R and the reception filter 63R in a top view of the module substrate 91. The transmission filter 62, the transmission filter 61T and the reception filter 61R are arranged along the x-axis, and the transmission filter 64 and the reception filter 63R are arranged along the x-axis. By arranging in this way, the isolation between the filters corresponding to different frequency band groups can be improved.

[0084] It should be noted that although the transmission filter 63T is arranged in the negative direction of the y-axis of the transmission and reception filter 64, it is not limited to this. The transmission filter 63T can also be arranged between the transmission and reception filter 64 and the reception filter 63R. In this case, the transmission and reception filter 64, the transmission filter 63T, and the reception filter 63R are arranged along the x-axis.

[0085] The transmitting filters 61T and 63T, the receiving filters 61R and 63R, and the transmitting and receiving filters 62 and 64 may be, for example, surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonance filters, and dielectric filters, but are not limited thereto.

[0086] Region R3 is an example of the third region. A semiconductor integrated circuit 20 is configured in region R3. The semiconductor integrated circuit 20 is an electronic component having an electronic circuit formed on the surface and inside of a semiconductor chip (also referred to as a bare die). In the present embodiment, the semiconductor integrated circuit 20 has a rectangular shape when viewed from above. In addition, the semiconductor integrated circuit 20 has low-noise amplifiers 21 and 22 and switches 53 and 55. It should be noted that the shape of the semiconductor integrated circuit 20 is not limited to a rectangle. In addition, the circuit elements built into the semiconductor integrated circuit 20 are not limited thereto.

[0087] The semiconductor integrated circuit 20 may be formed of, for example, a CMOS (Complementary Metal Oxide Semiconductor), specifically, by a SOI (Silicon on Insulator) process. Thus, the semiconductor integrated circuit 20 can be manufactured at a low cost. It should be noted that the semiconductor integrated circuit 20 may also be formed of at least one of GaAs, SiGe, and GaN. Thus, a high-quality semiconductor integrated circuit 20 can be realized.

[0088] In a plan view of the module substrate 91, the distance d1 between the power amplifier 11 and the semiconductor integrated circuit 20 is longer than the distance d2 between the power amplifier 12 and the semiconductor integrated circuit 20. That is, the power amplifier 11 is farther from the low noise amplifiers 21 and 22 than the power amplifier 12. In addition, in a plan view of the module substrate 91, the distance d3 between the transmission filter 61T and the semiconductor integrated circuit 20 is longer than the distance d4 between the transmission filter 63T and the semiconductor integrated circuit 20. That is, the transmission filter 61T is farther from the low noise amplifiers 21 and 22 than the transmission filter 63T. In addition, in a plan view of the module substrate 91, the distance d5 between the switch 52 and the semiconductor integrated circuit 20 is longer than the distance d6 between the switch 54 and the semiconductor integrated circuit 20. That is, the switch 52 is farther from the low noise amplifiers 21 and 22 than the switch 54.

[0089] In addition, in a plan view of the module substrate 91, the transceiver filter 62 is located on the opposite side of the low noise amplifier 21 with respect to the straight line connecting the switches 51 and 52. That is, the transceiver filter 62 is arranged on one of the two regions on the main surface 91a divided by the straight line connecting the switches 51 and 52, and the low noise amplifier 21 is arranged on the other of the two regions. As a result, a sufficient distance can be obtained between the wiring connecting one end of the transceiver filter 62 to the switch 51 and the wiring connecting the other end of the transceiver filter 62 to the low noise amplifier 21 via the switch 52. Therefore, the coupling between the input and output of the transceiver filter 62 can be suppressed, and the degradation of the signal can be reduced.

[0090] It should be noted that the straight line connecting switches 51 and 52 is at least one straight line among a plurality of straight lines connecting any point on switch 51 and any point on switch 52. That is, the transceiver filter 62 is located on the opposite side of the low noise amplifier 21 with respect to at least one of the plurality of straight lines.

[0091] The resin member 92 is disposed on the main surface 91a of the module substrate 91 and covers the main surface 91a and the circuit components on the main surface 91a. The resin member 92 has a function of ensuring reliability such as mechanical strength and moisture resistance of the components on the main surface 91a.

[0092] The shield electrode layer 95 is a metal thin film formed by sputtering, for example, and is formed to cover the upper surface and side surfaces of the resin member 92 and the side surfaces of the module substrate 91. The shield electrode layer 95 is set to a ground potential to suppress the intrusion of external noise into the circuit components constituting the high-frequency module 1.

[0093] The main surface 91b is an example of a second main surface, and is sometimes referred to as a lower surface or a back surface. Figure 3 As shown, a plurality of external connection terminals 150 are arranged on the main surface 91 b.

[0094] The plurality of external connection terminals 150 include Figure 1 The antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, and high-frequency output terminals 121 and 122 shown in the figure also include a ground terminal. The plurality of external connection terminals 150 are respectively connected to input / output terminals and / or ground terminals on the mother substrate arranged in the negative direction of the z-axis of the high-frequency module 1. As the plurality of external connection terminals 150, pad electrodes can be used, but are not limited thereto.

[0095] [1.3 Effects, etc.]

[0096] As described above, the high-frequency module 1 of the present embodiment comprises: a power amplifier 11; a power amplifier 12; a low-noise amplifier 21; a duplexer 61 having a passband including a communication band A included in a communication band group X and connected to the power amplifier 11 and the low-noise amplifier 21; a duplexer 63 having a passband including a communication band C included in a communication band group Y on a lower frequency side than the communication band group X and connected to the power amplifier 12; and a module substrate 91 on which the power amplifier 11, the power amplifier 12, the low-noise amplifier 21, the duplexers 61 and 63 are arranged, and when viewed from above the module substrate 91, a distance d1 between the power amplifier 11 and the low-noise amplifier 21 is longer than a distance d2 between the power amplifier 12 and the low-noise amplifier 21.

[0097] Thus, the distance d1 between the power amplifier 11 and the low noise amplifier 21 can be made larger than the distance d2 between the power amplifier 12 and the low noise amplifier 21. That is, the power amplifier 11 can be arranged at a position relatively far away from the low noise amplifier 21. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the power amplifier 11 and the low noise amplifier 21 can be suppressed, and the interference between the transmitted signal and the received signal can be suppressed. As a result, the isolation characteristics between the transmitting path and the receiving path can be improved, and the electrical characteristics of the high-frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the power amplifier 11 farther away from the low noise amplifier 21 than the power amplifier 12, the decrease in receiving sensitivity in the communication band group X can be effectively suppressed.

[0098] In addition, for example, in the high-frequency module 1 of the present embodiment, the communication frequency band A may be a communication frequency band for FDD, and the duplexer 61 may include: a transmitting filter 61T having a passband including an uplink operating frequency band of the communication frequency band A and connected to the power amplifier 11; and a receiving filter 61R having a passband including a downlink operating frequency band of the communication frequency band A and connected to the low noise amplifier 21.

[0099] This makes it possible to suppress a decrease in reception sensitivity in the communication band A for FDD.

[0100] In addition, for example, the high-frequency module 1 of the present embodiment may also include: a switch 51, which is connected to the antenna connection terminals 101 and 102; a switch 52, which is connected to the power amplifier 11; and a transceiver filter 62, which has a passband including the communication frequency band B included in the communication frequency band group X, one end of which is connected to the antenna connection terminal 101 or 102 via the switch 51, and the other end of which is connected to the power amplifier 11 via the switch 52, the duplexer 61 can also be connected to the antenna connection terminal 101 or 102 via the switch 51, and the transmitting filter 61T can also be connected to the power amplifier 11 via the switch 52.

[0101] This allows the power amplifier 11 to be shared by the communication bands A and B included in the communication band group X. Therefore, the number of components can be reduced, contributing to miniaturization of the high-frequency module 1 .

[0102] In addition, for example, the high frequency module 1 of this embodiment may further include a switch 53 connected to the low noise amplifier 21 , and the reception filter 61R may be connected to the low noise amplifier 21 via the switch 53 , and the other end of the transmission / reception filter 62 may be connected to the low noise amplifier 21 via the switches 52 and 53 .

[0103] Thus, the low noise amplifier 21 can be used in common in the communication bands A and B included in the communication band group X. Therefore, the number of components can be reduced, which contributes to miniaturization of the high-frequency module 1 .

[0104] In addition, for example, the high-frequency module 1 of the present embodiment may also include a low-noise amplifier 22, or the communication frequency band C may be a communication frequency band for FDD, and the duplexer 63 may include: a transmitting filter 63T having a passband including an uplink operating frequency band of the communication frequency band C and connected to the power amplifier 12; and a receiving filter 63R having a passband including a downlink operating frequency band of the communication frequency band C and connected to the low-noise amplifier 22.

[0105] Thus, the high-frequency module 1 can support communication in the communication frequency band C for FDD.

[0106] Furthermore, for example, in the high frequency module 1 of the present embodiment, the distance d1 between the power amplifier 11 and the low noise amplifier 22 in a plan view of the module substrate 91 may be greater than the distance d2 between the power amplifier 12 and the low noise amplifier 22 .

[0107] Thus, the power amplifier 11 can be arranged at a position relatively far from the low noise amplifier 22. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the power amplifier 11 and the low noise amplifier 22 can be suppressed, and the interference between the transmission signal and the reception signal can be suppressed. As a result, the isolation characteristics between the transmission path and the reception path can be improved, and the electrical characteristics of the high frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the power amplifier 11 farther away from the low noise amplifier 22 than the power amplifier 12, the decrease in the receiving sensitivity in the communication band group Y can be effectively suppressed.

[0108] Furthermore, for example, in the high frequency module 1 of the present embodiment, the distance d3 between the transmission filter 61T and the low noise amplifier 21 in a plan view of the module substrate 91 may be greater than the distance d4 between the transmission filter 63T and the low noise amplifier 21 .

[0109] Thus, the transmission filter 61T can be arranged at a position far away from the low noise amplifier 21. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the transmission filter 61T and the low noise amplifier 21 can be suppressed, and the interference between the transmission signal and the reception signal can be suppressed. As a result, the isolation characteristics between the transmission path and the reception path can be improved, and the electrical characteristics of the high-frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the transmission filter 61T farther away from the low noise amplifier 21 than the transmission filter 63T, the decrease in the receiving sensitivity in the communication band group X can be effectively suppressed.

[0110] Furthermore, for example, in the high frequency module 1 of the present embodiment, the distance d3 between the transmission filter 61T and the low noise amplifier 22 in a plan view of the module substrate 91 may be greater than the distance d4 between the transmission filter 63T and the low noise amplifier 22 .

[0111] Thus, the transmission filter 61T can be arranged at a position far away from the low noise amplifier 22. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the transmission filter 61T and the low noise amplifier 22 can be suppressed, and the interference between the transmission signal and the reception signal can be suppressed. As a result, the isolation characteristics between the transmission path and the reception path can be improved, and the electrical characteristics of the high-frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the transmission filter 61T farther away from the low noise amplifier 22 than the transmission filter 63T, the decrease in the receiving sensitivity in the communication band group Y can be effectively suppressed.

[0112] In addition, for example, the high-frequency module 1 of the present embodiment may also include: a switch 54, which is connected to the power amplifier 12; a switch 55, which is connected to the low-noise amplifier 22; a transceiver filter 64, which has a passband including the communication frequency band D for TDD included in the communication frequency band group Y, one end of which is connected to the antenna connection terminal 101 or 102 via the switch 51, and the other end is connected to the power amplifier 12 via the switch 54, and is connected to the low-noise amplifier 22 via switches 54 and 55. Alternatively, the duplexer 63 is connected to the antenna connection terminal 101 or 102 via the switch 51, the transmitting filter 63T is connected to the power amplifier 12 via the switch 54, and the receiving filter 63R is connected to the low-noise amplifier 22 via the switch 55.

[0113] Thus, the power amplifier 12 and the low noise amplifier 22 can be used in common in the communication bands C and D included in the communication band group Y. Therefore, the number of components can be reduced, which contributes to miniaturization of the high-frequency module 1 .

[0114] Furthermore, for example, in the high-frequency module 1 of the present embodiment, in a plan view of the module substrate 91 , the distance d5 between the switch 52 and the low-noise amplifier 21 may be greater than the distance d6 between the switch 54 and the low-noise amplifier 21 .

[0115] Thus, the switch 52 can be arranged at a position relatively far from the low noise amplifier 21. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the switch 52 and the low noise amplifier 21 can be suppressed, and the interference between the transmission signal and the reception signal can be suppressed. As a result, the isolation characteristics between the transmission path and the reception path can be improved, and the electrical characteristics of the high frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the switch 52 farther away from the low noise amplifier 21 than the switch 54, the decrease in the receiving sensitivity in the communication band group X can be effectively suppressed.

[0116] Furthermore, for example, in the high frequency module 1 of the present embodiment, in a plan view of the module substrate 91 , the distance d5 between the switch 52 and the low noise amplifier 22 may be greater than the distance d6 between the switch 54 and the low noise amplifier 22 .

[0117] Thus, the switch 52 can be arranged at a position relatively far from the low noise amplifier 22. Therefore, the electric field coupling, magnetic field coupling or electromagnetic field coupling between the switch 52 and the low noise amplifier 22 can be suppressed, and the interference between the transmission signal and the reception signal can be suppressed. As a result, the isolation characteristics between the transmission path and the reception path can be improved, and the electrical characteristics of the high frequency module 1 can be improved. In particular, the higher the frequency, the easier it is to produce electric field coupling, magnetic field coupling or electromagnetic field coupling. Therefore, by making the switch 52 farther away from the low noise amplifier 22 than the switch 54, the decrease in the receiving sensitivity in the communication band group X can be effectively suppressed.

[0118] In addition, for example, in the high-frequency module 1 of the present embodiment, the module substrate 91 may have main surfaces 91a and 91b facing each other, switches 51 to 55, duplexers 61 and 63, transceiver filters 62 and 64, power amplifiers 11 and 12, and low-noise amplifiers 21 and 22 are arranged on the main surface 91a, and a plurality of external connection terminals 150 are arranged on the main surface 91b.

[0119] Thus, the surface mount components can be arranged only on one main surface 91 a of the module substrate 91 , and the manufacturing process of the high-frequency module 1 can be simplified.

[0120] In addition, for example, the high-frequency module 1 of the present embodiment may further include ground conductors 93 and 94 that divide the main surface 91a into regions R1, R2, and R3, the power amplifiers 11 and 12 and the switches 52 and 54 are arranged in the region R1, the switch 51, the transmission filters 61T and 63T, the reception filters 61R and 63R, and the transmission and reception filters 62 and 64 are arranged in the region R2, and the low-noise amplifiers 21 and 22 and the switches 53 and 55 are arranged in the region R3.

[0121] Thus, the power amplifiers 11 and 12 and the low noise amplifiers 21 and 22 can be arranged in different regions R1 and R3 of the three regions divided by the ground conductors 93 and 94, and the isolation between the transmission path and the reception path can be improved. In addition, the switch 51, the transmission filters 61T and 63T, the reception filters 61R and 63R, and the transceiver filters 62 and 64 can be arranged in the same region R2, and the wiring length between the switch 51 and each filter can be shortened. Therefore, the electrical characteristics of the high-frequency module 1 can be further improved. In particular, when communicating simultaneously in multiple communication bands, the high-frequency module 1 can suppress the mismatch loss caused by the stray capacitance of the wiring, which can contribute to the improvement of NF.

[0122] In addition, for example, in the high-frequency module 1 of the present embodiment, the ground conductors 93 and 94 may be metal walls rising on the main surface 91 a .

[0123] Thus, the plurality of regions R1 , R2 , and R3 can be separated by the metal wall, and the high-frequency module 1 can further improve the isolation between the transmission path and the reception path.

[0124] Furthermore, for example, the high frequency module 1 of this embodiment may further include a resin member 92 covering the main surface 91 a and a shield electrode layer 95 covering the surface of the resin member 92 , and at least one of the top end and the side edge of each of the ground conductors 93 and 94 is bonded to the shield electrode layer 95 .

[0125] Thus, the tip and / or side edge of each of the ground conductors 93 and 94 can be connected to the shield electrode layer 95. Therefore, the ground potential of the ground conductors 93 and 94 can be stabilized, and the shielding effect of the ground conductors 93 and 94 can be improved.

[0126] In addition, for example, in the high-frequency module 1 of the present embodiment, the communication band A may also be Band 7 for LTE or n7 for 5GNR. In addition, for example, the communication band C may also be Band 1, Band 25, Band 3, or Band 66 for LTE, or n1, n25, n3, or n66 for 5GNR. In addition, for example, the communication band B may also be Band 41 or Band 40 for LTE, or n41 or n40 for 5GNR. In addition, for example, the communication band D may also be Band 34 or Band 39 for LTE, or n34 or n39 for 5GNR.

[0127] Therefore, the high frequency module 1 can be used in the LTE system and / or the 5GNR system.

[0128] Furthermore, the communication device 5 of the present embodiment includes the RFIC 3 that processes high-frequency signals, and the high-frequency module 1 that transmits high-frequency signals between the RFIC 3 and the antennas 2A and 2B.

[0129] Thus, in the communication device 5 , the same effects as those of the high-frequency module 1 can be achieved.

[0130] (Other embodiments)

[0131] The high-frequency module and the communication device of the present invention are described above based on the embodiments, but the high-frequency module and the communication device of the present invention are not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, modified examples obtained by applying various modifications that can be conceived by those skilled in the art to the above embodiments within the scope of the present invention, and various devices in which the above high-frequency module and the communication device are built-in are also included in the present invention.

[0132] For example, in the circuit structures of the high-frequency modules and communication devices of the above-mentioned embodiments, other circuit elements and wirings may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, an impedance matching circuit may be inserted between the duplexer 61 and the switch 51, between the transceiver filter 62 and the switch 51, between the duplexer 63 and the switch 51, and between the transceiver filter 64 and the switch 51. In addition, the impedance matching circuit may be inserted between the power amplifier 11 and the switch 52, between the low-noise amplifier 21 and the switch 53, between the power amplifier 12 and the switch 54, and between the low-noise amplifier 22 and the switch 55. The impedance matching circuit may be composed of an inductor and / or a capacitor, for example.

[0133] It should be noted that, in the above-mentioned embodiment, two switches 52 and 53 are used in the connection and disconnection between the duplexer 61 and the transceiver filter 62 and the power amplifier 11 and the low noise amplifier 21, but the structure of the switch is not limited to this. For example, the switches 52 and 53 may also be composed of a single switch. In this case, the single switch has five terminals respectively connected to the output of the transmission filter 61T, the reception filter 61R, the transceiver filter 62, the output of the power amplifier 11, and the output of the low noise amplifier 21. In addition, the switches 54 and 55 may also be composed of a single switch like the switches 52 and 53.

[0134] It should be noted that the arrangement of the components in the above embodiment is an example and is not limited thereto. For example, in the above embodiment, the semiconductor integrated circuit 20 and / or the switch 51 may be arranged on the main surface 91b. That is, the module substrate 91 may have main surfaces 91a and 91b facing each other, and the duplexer 61, the transceiver filter 62, the duplexer 63, the transceiver filter 64, and the power amplifiers 11 and 12 may be arranged on the main surface 91a, and the switches 51, 53 and 55, the low noise amplifiers 21 and 22, and the plurality of external connection terminals 150 may be arranged on the main surface 91b. In this case, as the plurality of external connection terminals 150, post electrodes and / or protruding electrodes may be used. Thus, components can be arranged on both surfaces of the module substrate 91, and thus the high frequency module 1 can be miniaturized. It should be noted that the switch 52 and / or 54 may also be arranged on the main surface 91a. At this time, at least a portion of the switch 52 and / or at least a portion of the switch 54 may overlap with at least a portion of the low noise amplifier 21 and / or at least a portion of the low noise amplifier 22 arranged on the main surface 91 b in a plan view of the module substrate 91 .

[0135] It should be noted that in the above embodiment, the high frequency module 1 has two antenna connection terminals 101 and 102 for connecting to the two antennas 2A and 2B, but the number of antenna connection terminals is not limited thereto. For example, the number of antenna connection terminals may be one or three or more.

[0136] It should be noted that, in the above-mentioned embodiment, the high-frequency module 1 includes the switch 53 for switching the filter connected to the low-noise amplifier 21, but it is not necessary to include the switch 53. In this case, the high-frequency module 1 may also include two low-noise amplifiers instead of the low-noise amplifier 21. At this time, the other end of the receiving filter 61R may be connected to one of the two low-noise amplifiers, and the other end of the transmitting and receiving filter 62 may be connected to the other of the two low-noise amplifiers via the switch 52.

[0137] Similarly, the high frequency module 1 may also include a switch 55. In this case, the high frequency module 1 may also include two low noise amplifiers instead of the low noise amplifier 22. At this time, the other end of the reception filter 63R may be connected to one of the two low noise amplifiers, and the other end of the transmission and reception filter 64 may be connected to the other of the two low noise amplifiers via the switch 54.

[0138] Industrial Applicability

[0139] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed at the front end.

[0140] Description of Reference Numerals

[0141] 1 high frequency module;

[0142] 2A, 2B antennas;

[0143] 3RFIC;

[0144] 4BBIC;

[0145] 5 communication devices;

[0146] 11, 12 Power amplifier;

[0147] 20 Semiconductor integrated circuits;

[0148] 21, 22 Low Noise Amplifier

[0149] 51, 52, 53, 54, 55 switches;

[0150] 61, 63 duplexer;

[0151] 61R, 63R receiving filters;

[0152] 61T, 63T transmit filters;

[0153] 62, 64 transceiver filter;

[0154] 91 module base plate;

[0155] 91a, 91b main surface;

[0156] 92 resin components;

[0157] 93, 94 grounding conductor;

[0158] 95 shielding electrode layer;

[0159] 101, 102 antenna connection terminals;

[0160] 111, 112 high frequency input terminals;

[0161] 121, 122 high frequency output terminals;

[0162] 150 external connection terminals;

[0163] 511, 512, 513, 514, 515, 516, 521, 522, 523, 524, 531, 532, 533, 541, 542, 543, 544, 551, 552, 553 terminals;

[0164] 941, 942 metal wall;

[0165] d1, d2, d3, d4, d5, d6 distances;

[0166] R1, R2, R3 areas.

Claims

1. A high frequency module, comprising: a first power amplifier; a second power amplifier; The first low noise amplifier; a first filter having a passband including a first communication frequency band included in a first communication frequency band group and connected to the first power amplifier and the first low noise amplifier; a second filter having a passband including a second communication frequency band included in a second communication frequency band group on a lower frequency side than the first communication frequency band group, and connected to the second power amplifier; and a module substrate, which is provided with the first power amplifier, the second power amplifier, the first low noise amplifier, the first filter and the second filter, In a plan view of the module substrate, a distance between the first power amplifier and the first low noise amplifier is longer than a distance between the second power amplifier and the first low noise amplifier.

2. The high frequency module according to claim 1, wherein: The first communication frequency band is a communication frequency band for frequency division duplexing, The first filter has: a first transmission filter having a passband including an uplink operating frequency band of the first communication frequency band and connected to the first power amplifier; and The first reception filter has a passband including a downlink operating frequency band of the first communication frequency band and is connected to the first low noise amplifier.

3. The high frequency module according to claim 2, wherein: The high frequency module also has: A first switch connected to the antenna connection terminal; A second switch connected to the first power amplifier; and a third filter having a passband including a third communication frequency band included in the first communication frequency band group, one end of which is connected to the antenna connection terminal via the first switch, and the other end of which is connected to the first power amplifier via the second switch, The first filter is connected to the antenna connection terminal via the first switch, The first transmission filter is connected to the first power amplifier via the second switch.

4. The high frequency module according to claim 3, wherein: The high frequency module further includes a third switch connected to the first low noise amplifier. The other end of the third filter is connected to the first low noise amplifier via the second switch and the third switch. The first reception filter is connected to the first low noise amplifier via the third switch.

5. The high frequency module according to claim 4, wherein: The high frequency module further comprises a second low noise amplifier, The second communication frequency band is a communication frequency band for frequency division duplexing, The second filter has: a second transmission filter having a passband including an uplink operating frequency band of the second communication frequency band and connected to the second power amplifier; as well as The second reception filter has a passband including a downlink operating frequency band of the second communication frequency band and is connected to the second low noise amplifier.

6. The high frequency module according to claim 5, wherein: In a plan view of the module substrate, a distance between the first power amplifier and the second low noise amplifier is longer than a distance between the second power amplifier and the second low noise amplifier.

7. The high frequency module according to claim 5 or 6, wherein: In a plan view of the module substrate, a distance between the first transmission filter and the first low-noise amplifier is longer than a distance between the second transmission filter and the first low-noise amplifier.

8. The high frequency module according to claim 5 or 6, wherein: In a plan view of the module substrate, a distance between the first transmission filter and the second low noise amplifier is longer than a distance between the second transmission filter and the second low noise amplifier.

9. The high frequency module according to claim 5 or 6, wherein: The high frequency module also has: a fourth switch connected to the second power amplifier; a fifth switch connected to the second low noise amplifier; and a fourth filter having a passband including a fourth communication frequency band included in the second communication frequency band group, one end of which is connected to the antenna connection terminal via the first switch, the other end of which is connected to the second power amplifier via the fourth switch, and is connected to the second low noise amplifier via the fourth switch and the fifth switch, The second filter is connected to the antenna connection terminal via the first switch, The second transmission filter is connected to the second power amplifier via the fourth switch. The second receive filter is connected to the second low noise amplifier via the fifth switch.

10. The high frequency module according to claim 9, wherein: In a plan view of the module substrate, a distance between the second switch and the first low noise amplifier is longer than a distance between the fourth switch and the first low noise amplifier.

11. The high frequency module according to claim 9, wherein: In a plan view of the module substrate, a distance between the second switch and the second low noise amplifier is longer than a distance between the fourth switch and the second low noise amplifier.

12. The high frequency module according to claim 9, wherein: The module substrate has a first main surface and a second main surface facing each other. The first filter, the second filter, the third filter, the fourth filter, the first power amplifier, and the second power amplifier are arranged on the first main surface. The first switch, the third switch, the fifth switch, the first low-noise amplifier, the second low-noise amplifier, and a plurality of external connection terminals are arranged on the second main surface.

13. The high frequency module according to claim 9, wherein: The module substrate has a first main surface and a second main surface facing each other. The first main surface is provided with the first switch, the second switch, the third switch, the fourth switch, the fifth switch, the first filter, the second filter, the third filter, the fourth filter, the first power amplifier, the second power amplifier, the first low noise amplifier, and the second low noise amplifier. A plurality of external connection terminals are arranged on the second main surface.

14. The high frequency module according to claim 13, wherein: The high-frequency module further includes a ground conductor that divides the first main surface into a first region, a second region, and a third region. The first power amplifier, the second power amplifier, the second switch and the fourth switch are arranged in the first area, The first switch, the first filter, the second filter, the third filter and the fourth filter are arranged in the second area. The first low noise amplifier, the second low noise amplifier, the third switch and the fifth switch are configured in the third region.

15. The high frequency module according to claim 14, wherein: The ground conductor is a metal wall body standing on the first main surface.

16. The high frequency module according to claim 14 or 15, wherein: The high frequency module also has: a resin member covering the first main surface; and a shielding electrode layer covering a surface of the resin member, At least one of a tip end portion and a side edge portion of the ground conductor is joined to the shield electrode layer.

17. The high frequency module according to any one of claims 1 to 6, wherein: The first communication frequency band is Band 7 for LTE or n7 for 5GNR.

18. The high frequency module according to any one of claims 1 to 6, wherein: The second communication frequency band is Band 1, Band 25, Band 3 or Band 66 for LTE, or n1, n25, n3 or n66 for 5GNR.

19. The high frequency module according to claim 5 or 6, wherein: The third communication frequency band is Band 41 or Band 40 for LTE, or n41 or n40 for 5GNR.

20. The high frequency module according to claim 9, wherein: The fourth communication frequency band is Band 34 or Band 39 for LTE, or n34 or n39 for 5GNR.

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