semiconductor light-emitting devices

Abstract

This application discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a multi-quantum well light-emitting layer, a first electrode, a second electrode, a first mixed semiconductor layer, and a second mixed semiconductor layer. The first mixed semiconductor layer and the second mixed semiconductor layer are disposed on opposite sides of the multi-quantum well light-emitting layer. The first electrode is disposed on a side of the first mixed semiconductor layer away from the multi-quantum well light-emitting layer, and the second electrode is disposed on a side of the second mixed semiconductor layer away from the multi-quantum well light-emitting layer. Through the above-described method, this application can achieve full-band emission of the semiconductor light-emitting device in the alternating current (AC) band.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to semiconductor light-emitting devices. Background Art

[0002] A light-emitting diode, or LED, is a commonly used light-emitting device that emits light through the recombination of electrons and holes. LEDs efficiently convert electrical energy into light and are widely used in lighting. Because LEDs require a single current direction to maintain their light emission, they are typically connected in a bridge circuit using multiple LEDs when used with alternating current (AC). However, this bridge circuit arrangement only allows LEDs to emit light within the half-wave band of the AC current, resulting in low luminous efficiency. Summary of the Invention

[0003] The embodiments of the present application provide a semiconductor light-emitting device capable of emitting light in the full wavelength band of alternating current.

[0004] The present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a multi-quantum well light-emitting layer, a first electrode, a second electrode, a first mixed semiconductor layer, and a second mixed semiconductor layer. The first mixed semiconductor layer and the second mixed semiconductor layer are disposed on opposite sides of the multi-quantum well light-emitting layer. The first electrode is disposed on a side of the first mixed semiconductor layer remote from the multi-quantum well light-emitting layer, and the second electrode is disposed on a side of the second mixed semiconductor layer remote from the multi-quantum well light-emitting layer. The multi-quantum well light-emitting layer includes multiple stacked quantum well layers, and the structure of the multi-quantum well light-emitting layer is symmetrically arranged with the central cross-section of the multi-quantum well light-emitting layer as a symmetry plane. The first mixed semiconductor layer includes a first P-type region and a first N-type region, respectively connected to the multi-quantum well light-emitting layer, wherein the first P-type region and the first N-type region are formed in the same epitaxial structure. The second mixed semiconductor layer includes a second P-type region and a second N-type region, respectively connected to the multi-quantum well light-emitting layer, wherein the second P-type region and the second N-type region are formed in the same epitaxial structure. The first P-type region and the second N-type region are disposed opposite each other, and the first N-type region and the second P-type region are disposed opposite each other. The first electrode is connected to the first P-type region and the first N-type region, and the second electrode is connected to the second P-type region and the second N-type region.

[0005] The present application has the beneficial effect of emitting light under the influence of an electric current, thereby providing illumination, unlike the prior art. The first and second mixed semiconductor layers can be connected to electrodes, thereby electrically connecting to an AC power grid. The first and second mixed semiconductor layers are disposed on opposite sides of the multi-quantum well light-emitting layer. The first P-type region and the second N-type region are disposed opposite each other. Thus, when the AC current flows from the first mixed semiconductor layer to the second mixed semiconductor layer, the current can flow from the first P-type region through the multi-quantum well light-emitting layer to the second N-type region. The second P-type region and the first N-type region are disposed opposite each other. Thus, when the AC current flows from the second mixed semiconductor layer to the first mixed semiconductor layer, the current can flow from the second P-type region through the multi-quantum well light-emitting layer to the first N-type region. In summary, different wavelengths of AC current can be transmitted to the multi-quantum well light-emitting layer through the first and second mixed semiconductor layers, enabling the multi-quantum well light-emitting layer to emit light across the entire AC wavelength range. Moreover, the structure of the multi-quantum well light-emitting layer is symmetrically arranged about its central cross section, so that when different wavelengths of alternating current flow through the multi-quantum well light-emitting layer, the quantum well structures through which the current passes are similar, thereby making the light emission relatively uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 This is a schematic structural diagram of the first embodiment of the semiconductor light-emitting device of the present application;

[0007] Figure 2 yes Figure 1 A top view of the semiconductor light emitting device shown;

[0008] Figure 3 This is a schematic structural diagram of a second embodiment of the semiconductor light-emitting device of the present application;

[0009] Figure 4 is a schematic structural diagram of a third embodiment of the semiconductor light-emitting device of the present application;

[0010] Figure 5 is a schematic structural diagram of a fourth embodiment of the semiconductor light-emitting device of the present application;

[0011] Figure 6 is a schematic structural diagram of a fifth embodiment of the semiconductor light-emitting device of the present application;

[0012] Figure 7 It is a structural schematic diagram of the sixth embodiment of the semiconductor light-emitting device of the present application. DETAILED DESCRIPTION

[0013] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0014] See Figure 1 The embodiment of the present application describes an exemplary structure of a semiconductor light-emitting device 1. The semiconductor light-emitting device 1 includes a multi-quantum well light-emitting layer 10, a first mixed semiconductor layer 20, a second mixed semiconductor layer 30, a first electrode 50 and a second electrode 51. The first mixed semiconductor layer 20 and the second mixed semiconductor layer 30 are arranged on opposite sides of the multi-quantum well light-emitting layer 10. The multi-quantum well light-emitting layer 10 can emit light under the action of electric current. The first mixed semiconductor layer 20 and the second mixed semiconductor layer 30 are used to transmit alternating current to the multi-quantum well light-emitting layer 10. The first electrode 50 is arranged on a side of the first mixed semiconductor layer 20 away from the multi-quantum well light-emitting layer 10, and the second electrode 51 is arranged on a side of the second mixed semiconductor layer 30 away from the multi-quantum well light-emitting layer 10. The first electrode 50 and the second electrode 51 can respectively connect the first mixed semiconductor layer 20 and the second mixed semiconductor layer 30 to the AC power grid.

[0015] Specifically, the first hybrid semiconductor layer 20 includes a first P-type region 21 and a first N-type region 22, each connected to the multi-quantum well light-emitting layer 10. The second hybrid semiconductor layer 30 includes a second P-type region 31 and a second N-type region 32, each connected to the multi-quantum well light-emitting layer 10. The first P-type region 21 and the second N-type region 32 are disposed opposite each other, and the first N-type region 22 and the second P-type region 31 are disposed opposite each other. With this arrangement, when the alternating current flows from the first hybrid semiconductor layer 20 to the second hybrid semiconductor layer 30, the current can flow from the first P-type region 21 through the multi-quantum well light-emitting layer 10 to the second N-type region 32. When the alternating current flows from the second hybrid semiconductor layer 30 to the first hybrid semiconductor layer 20, the current can flow from the second P-type region 31 through the multi-quantum well light-emitting layer 10 to the first N-type region 22. Therefore, the first mixed semiconductor layer 20 and the second mixed semiconductor layer 30 can allow the entire wavelength of the alternating current to pass through the multi-quantum well light-emitting layer 10, thereby enabling the semiconductor light-emitting device 1 to emit light in the entire wavelength of the alternating current and improving the light-emitting efficiency.

[0016] In one embodiment, the first P-type region 21 and the first N-type region 22 are formed in the same epitaxial structure. The second P-type region 31 and the second N-type region 32 are formed in the same epitaxial structure. The first P-type region 21 and the first N-type region 22 can be formed by ion implantation in the same epitaxial structure. The second P-type region 31 and the second N-type region 32 can also be formed by ion implantation in the same epitaxial structure. This simplifies the manufacturing difficulty of the first hybrid semiconductor layer 20 and the second hybrid semiconductor layer 30, allowing the semiconductor device to be formed by deposition and implantation, reducing the generation of additional processes. This also enables the semiconductor light-emitting device 1 to have a higher degree of integration and better luminous efficacy.

[0017] In one embodiment, see Figure 2 , Figure 2 Figure 2 is a schematic top-down view of the first hybrid semiconductor layer 20. The first hybrid semiconductor layer 20 includes multiple first P-type regions 21 and first N-type regions 22. Each first P-type region 21 is adjacent to multiple first N-type regions 22, and each first N-type region 22 is adjacent to multiple first P-type regions 21. This configuration enables the first hybrid semiconductor layer 20 to transmit alternating current to different locations in the multi-quantum well light-emitting layer 10 when transmitting alternating current, thereby achieving more uniform current distribution within the multi-quantum well light-emitting layer 10 and improving light-emitting efficiency.

[0018] In one embodiment, the second hybrid semiconductor layer 30 includes a plurality of second P-type regions 31 and a second N-type region 32. Each second P-type region 31 is adjacent to a plurality of second N-type regions 32, and each second N-type region 32 is adjacent to a plurality of second P-type regions 31. This configuration enables the second hybrid semiconductor layer 30 to transmit alternating current to different locations in the multi-quantum well light-emitting layer 10 when transmitting alternating current, thereby achieving more uniform current distribution in the multi-quantum well light-emitting layer 10 and improving light emission efficiency.

[0019] In another embodiment, see Figure 3 The first hybrid semiconductor layer 20 includes a plurality of first P-type regions 21 and a first N-type region 22, with the first P-type regions 21 and the first N-type regions 22 being alternately adjacent. The second hybrid semiconductor layer 30 includes a plurality of second P-type regions 31 and second N-type regions 32, with the second P-type regions 31 and the second N-type regions 32 being alternately adjacent. This configuration enables the first hybrid semiconductor layer 20 and the second hybrid semiconductor layer 30 to transmit alternating current to different locations in the multi-quantum well light-emitting layer 10 when transmitting alternating current, allowing the current to flow through the multi-quantum well light-emitting layer 10 as evenly as possible, thereby making the current distribution in the multi-quantum well light-emitting layer 10 more uniform and improving the light-emitting efficiency.

[0020] In one embodiment, see Figure 2 and Figure 3The projection of the first electrode 50 on the first mixed semiconductor layer 20 at least partially covers each first P-type region 21 and each first N-type region 22, and the projection of the second electrode 51 on the second mixed semiconductor layer 30 at least partially covers each second P-type region 31 and each second N-type region 32. This configuration ensures that the first electrode 50 can be electrically connected to different first P-type regions 21 and different first N-type regions 22, and that the second electrode 51 can be electrically connected to different second P-type regions 31 and different second N-type regions 32.

[0021] In one embodiment, see Figure 4 A tunneling structure 40 is further provided between the first hybrid semiconductor layer 20 and the first electrode 50. The tunneling structure 40 includes a first doped region 41, a second doped region 42, and a third doped region 43. The first doped region 41 is provided on the side of the first P-type region 21 near the first electrode 50, the second doped region 42 is provided on the side of the first N-type region 22 near the first electrode 50, and the third doped region 43 is provided on the sides of the first doped region 41 and the second doped region 42 near the first electrode 50. The first doped region 41 has a P doping type and a higher doping concentration than the first P-type region 21. The second doped region 42 has an N doping type and a higher doping concentration than the first N-type region 22. The third doped region 43 has an N doping type and a higher doping concentration than the second doped region 42. The provision of the first doped region 41 and the third doped region 43 with higher doping concentrations allows electrons to tunnel through the potential barrier via the tunnel effect, forming an ohmic contact with low resistance between the first electrode 50 and the first P-type region 21, thereby facilitating current transmission. By providing the second doping region 42 and the third doping region 43 with higher doping concentrations, electrons can pass through the potential barrier by tunneling, thereby forming an ohmic contact with low resistance between the first electrode 50 and the first N-type region 22, thereby facilitating current transmission.

[0022] In one embodiment, see Figure 4A tunneling structure 40 is also provided between the second hybrid semiconductor layer 30 and the second electrode 51. The tunneling structure 40 includes a first doped region 41, a second doped region 42, and a third doped region 43. The first doped region 41 is provided on the side of the second P-type region 31 near the second electrode 51, the second doped region 42 is provided on the side of the second N-type region 32 near the second electrode, and the third doped region 43 is provided on both sides of the first doped region 41 and the second doped region 42 near the second electrode 51. The first doped region 41 is of P type and has a higher doping concentration than the second P-type region 31. The second doped region 42 is of N type and has a higher doping concentration than the second N-type region 32. The third doped region 43 is of N type and has a higher doping concentration than the second doped region 42. The provision of the first doped region 41 and the third doped region 43 with higher doping concentrations allows electrons to tunnel through the potential barrier via the tunneling effect, forming an ohmic contact with low resistance between the second electrode 51 and the second P-type region 31, thereby facilitating current transmission. By providing the second doping region 42 and the third doping region 43 with higher doping concentrations, electrons can pass through the potential barrier by tunneling, thereby forming an ohmic contact with low resistance between the second electrode 51 and the second N-type region 32 , thereby facilitating current transmission.

[0023] In one embodiment, see Figure 5 An insulating layer 60 is provided between each first P-type region 21 and the adjacent first N-type region 22, and an insulating layer 60 is provided between each second P-type region 31 and the adjacent second N-type region 32. Providing the insulating layer 60 between the first P-type region 21 and the adjacent first N-type region 22 can reduce the current flowing from the first P-type region 21 to the first N-type region 22 when current flows through the first mixed semiconductor layer 20, thereby reducing current loss and improving luminous efficiency. Providing the insulating layer 60 between the second P-type region 31 and the adjacent second N-type region 32 can reduce the current flowing from the first P-type region 21 to the first N-type region 22 when current flows through the second mixed semiconductor layer 30, thereby reducing current loss and improving luminous efficiency. Optionally, an insulating layer 60 is provided between each first doped region 41 and the adjacent second doped region 42, thereby reducing the current flow between the first doped region 41 and the second doped region 42, thereby reducing current loss and improving luminous efficiency.

[0024] In some embodiments, the first electrode 50 is a cadmium electrode, electrically connected to the first mixed semiconductor layer 20 , or the second electrode 51 is a cadmium electrode, electrically connected to the second mixed semiconductor layer 30 .

[0025] In one embodiment, the multi-quantum well light-emitting layer 10 includes a plurality of quantum well layers stacked in layers. The quantum well layer is formed by sandwiching a narrow and thin semiconductor layer with a wide band gap between a semiconductor layer with a wide band gap. The electric potential of the semiconductor layer with a narrow band gap is lower than that of the surrounding semiconductor layers, thus forming a quantum well (potential well). Electrons and holes can be transported to the quantum well layer under the action of an external electric field, and the electrons and holes will be confined in a space, thereby increasing the overlap rate of the electron and hole wave functions and improving the luminous efficiency. Furthermore, multiple quantum well layers and quantum barrier layers are stacked, and a dielectric layer 70 is further embedded at the upper and lower ends or in the middle of the multi-quantum well light-emitting layer 10, thereby forming a capacitor of a certain size, so that the alternating current energy can penetrate the semiconductor light-emitting device 1 and continue to emit light.

[0026] Optionally, the structure of the multi-quantum well light-emitting layer 10 is symmetrically arranged with the central cross-section of the multi-quantum well light-emitting layer 10 as the symmetry plane. In this arrangement, when alternating current of different wavelengths flows through the multi-quantum well light-emitting layer 10, although the current flows in different directions, the quantum well structures through which the current passes are similar, thereby achieving relatively uniform and consistent light emission.

[0027] In one embodiment, the bandgap width of the quantum well layer gradually increases or decreases from the middle of the multi-quantum well light-emitting layer 10 to both sides. In other words, the bandgap widths of the multiple quantum well layers are gradual. The gradual bandgap width design can improve the capacitance effect of the semiconductor light-emitting device 1, thereby improving the penetration of alternating current, making the device emit light more naturally, and extending the service life of the semiconductor light-emitting device 1. Furthermore, the difference in bandgap width will also lead to different luminous colors. The gradual bandgap width design can enable different quantum well layers to emit light of different colors, thereby enabling the semiconductor light-emitting device 1 to emit mixed light, such as white light or colored light.

[0028] In one embodiment, see Figure 6 and Figure 7 The semiconductor light-emitting device 1 further includes a dielectric layer 70. The material of the dielectric layer 70 can be AlGaN or other nitride materials compatible with the epitaxial process. The dielectric layer 70 is located in the middle of the multi-quantum well light-emitting layer 10 and separates the quantum well light-emitting layer into two symmetrical parts. In another embodiment, a dielectric layer 70 is provided between the first mixed semiconductor layer 20 and the multi-quantum well light-emitting layer 10 and between the second mixed semiconductor layer 30 and the multi-quantum well light-emitting layer 10. By providing the dielectric layer 70, the capacitance effect of the semiconductor light-emitting device 1 can be enhanced, thereby improving the voltage resistance of the semiconductor light-emitting device 1.

[0029] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A semiconductor light emitting device, characterized in that: The device comprises a multi-quantum well light-emitting layer, a first electrode, a second electrode, a first mixed semiconductor layer, and a second mixed semiconductor layer, wherein the first mixed semiconductor layer and the second mixed semiconductor layer are arranged on opposite sides of the multi-quantum well light-emitting layer; the first electrode is arranged on a side of the first mixed semiconductor layer away from the multi-quantum well light-emitting layer, and the second electrode is arranged on a side of the second mixed semiconductor layer away from the multi-quantum well light-emitting layer; In which, the multi-quantum well light-emitting layer includes a plurality of stacked quantum well layers, and the structure of the multi-quantum well light-emitting layer is symmetrically arranged with the central cross-section of the multi-quantum well light-emitting layer as the symmetry plane; the first mixed semiconductor layer includes a first P-type region and a first N-type region respectively connected to the multi-quantum well light-emitting layer, wherein the first P-type region and the first N-type region are formed in the same epitaxial structure, and the second mixed semiconductor layer includes a second P-type region and a second N-type region respectively connected to the multi-quantum well light-emitting layer, wherein the second P-type region and the second N-type region are formed in the same epitaxial structure, the first P-type region and the second N-type region are arranged opposite to each other, and the first N-type region and the second P-type region are arranged opposite to each other; the first electrode is connected to the first P-type region and the first N-type region, and the second electrode is connected to the second P-type region and the second N-type region.

2. The semiconductor light emitting device according to claim 1, wherein: The band gap width of the quantum well layer gradually increases or decreases from the middle of the multi-quantum well light-emitting layer to both sides.

3. The semiconductor light emitting device according to claim 1, wherein: A tunneling structure is also provided between the first hybrid semiconductor layer and the first electrode, and the tunneling structure includes a first doped region, a second doped region and a third doped region. The first doped region is provided on a side of the first P-type region close to the first electrode, the second doped region is provided on a side of the first N-type region close to the first electrode, and the third doped region is provided on a side of the first doped region and the second doped region close to the first electrode. The doping type of the first doped region is P, and the doping concentration is higher than that of the first P-type region. The doping type of the second doped region is N, and the doping concentration is higher than that of the first N-type region. The doping type of the third doped region is N, and the doping concentration is higher than that of the second doped region.

4. The semiconductor light emitting device according to claim 1, wherein: A tunneling structure is also provided between the second hybrid semiconductor layer and the second electrode, and the tunneling structure includes a first doped region, a second doped region and a third doped region. The first doped region is provided on a side of the second P-type region close to the second electrode, the second doped region is provided on a side of the second N-type region close to the two electrodes, and the third doped region is provided on a side of the first doped region and the second doped region close to the second electrode. The doping type of the first doped region is P, and the doping concentration is higher than that of the second P-type region. The doping type of the second doped region is N, and the doping concentration is higher than that of the second N-type region. The doping type of the third doped region is N, and the doping concentration is higher than that of the second doped region.

5. The semiconductor light emitting device according to claim 1, wherein: The first mixed semiconductor layer includes a plurality of first P-type regions and a plurality of first N-type regions, each of the first P-type regions is adjacent to a plurality of the first N-type regions, and each of the first N-type regions is adjacent to a plurality of the first P-type regions; the second mixed semiconductor layer includes a plurality of second P-type regions and a plurality of second N-type regions, each of the second P-type regions is adjacent to a plurality of the second N-type regions, and each of the second N-type regions is adjacent to a plurality of the second P-type regions.

6. The semiconductor light emitting device according to claim 1, wherein: The first mixed semiconductor layer includes a plurality of the first P-type regions and the first N-type regions, which are alternately adjacent to each other; the second mixed semiconductor layer includes a plurality of the second P-type regions and the second N-type regions, which are alternately adjacent to each other.

7. The semiconductor light emitting device according to claim 5 or 6, characterized in that: The projection of the first electrode on the first mixed semiconductor layer at least partially covers each of the first P-type regions and each of the first N-type regions, and the projection of the second electrode on the second mixed semiconductor layer at least partially covers each of the second P-type regions and each of the second N-type regions.

8. The semiconductor light emitting device according to claim 1, wherein: The semiconductor light emitting device further includes a dielectric layer, which is located in the middle of the multi-quantum well light emitting layer and divides the quantum well light emitting layer into two symmetrical parts.

9. The semiconductor light emitting device according to claim 1, wherein: The semiconductor light emitting device further includes a dielectric layer, which is respectively provided between the first mixed semiconductor layer and the multi-quantum well light emitting layer and between the second mixed semiconductor layer and the multi-quantum well light emitting layer.

10. The semiconductor light emitting device according to claim 3 or 4, characterized in that: An insulating layer is provided between each first P-type region and the adjacent first N-type region, and an insulating layer is provided between each second P-type region and the adjacent second N-type region; An insulating layer is disposed between each first doping region and the adjacent second doping region.

Images