Gas processing apparatus and semiconductor processing apparatus

Abstract

This disclosure provides a gas processing apparatus and a semiconductor processing apparatus. The gas processing apparatus includes a housing with a receiving cavity. An inlet and an outlet are provided on the housing, and the inlet and outlet communicate with the outside of the housing. The receiving cavity has a connecting separation channel and a collecting cavity. One end of the separation channel communicates with the inlet, and the other end communicates with the collecting cavity, which is connected to the outlet. The separation channel facilitates the separation of dust and gas, thereby improving dust deposition and reducing dust entering the vacuum pump with the gas, thus reducing the impact of dust on the vacuum pump. Therefore, the gas processing apparatus and semiconductor processing apparatus provided by this disclosure facilitate the separation of dust and gas, improve dust deposition, reduce dust entering the vacuum pump with the gas, and thus reduce the impact of dust on the vacuum pump.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a gas processing apparatus and a semiconductor processing apparatus. Background Technology

[0002] In semiconductor manufacturing processes, wafers are processed in processing chambers. Processing gases are introduced into the processing chambers via an external gas source, and a vacuum is created through an exhaust system to maintain the processing chambers at the required pressure. During this process, reactions between the processing gases and chemical reagents on the wafers can generate byproducts, such as particulate byproducts (i.e., dust).

[0003] In related technologies, the exhaust system may include a vacuum pump and a dust collection chamber. The vacuum pump is connected to the dust collection chamber. The gas in the processing chamber is transported to the dust collection chamber by the action of the vacuum pump. The dust in the gas is deposited at the bottom of the dust collection chamber under the action of gravity. The remaining gas is discharged from the dust collection chamber by the action of the vacuum pump.

[0004] However, the dust mentioned above can easily enter the vacuum pump with the gas, thus affecting the vacuum pump. Summary of the Invention

[0005] This disclosure provides a gas processing device and a semiconductor processing device, which facilitate the separation of dust and gas, improve the dust deposition effect, reduce the dust entering the vacuum pump with the gas, and thus reduce the impact of dust on the vacuum pump.

[0006] The embodiments disclosed herein provide the following technical solutions:

[0007] A first aspect of this disclosure provides a gas processing apparatus, comprising: a housing having a receiving cavity, an air inlet and an air outlet being provided on the housing, the air inlet and the air outlet being connected to the outside of the housing; the receiving cavity having a connecting separation channel and a collecting cavity, one end of the separation channel being connected to the air inlet, the other end of the separation channel being connected to the collecting cavity, and the collecting cavity being connected to the air outlet.

[0008] The gas processing apparatus provided in this embodiment includes a housing with a receiving cavity. The housing has an inlet and an outlet, both connected to the outside of the housing. The receiving cavity may have a connecting separation channel and a collecting cavity. One end of the separation channel is connected to the inlet, and the other end is connected to the collecting cavity, which is connected to the outlet. Gas outside the housing enters the separation channel and collecting cavity through the inlet and exits the housing through the outlet. The collecting cavity can be used to collect dust from the gas, and the separation channel facilitates the separation of dust and gas, thereby improving dust deposition, reducing dust entering the vacuum pump with the gas, reducing the impact of dust on the vacuum pump, extending its lifespan, reducing its failure rate, and thus lowering maintenance costs and shortening maintenance time.

[0009] In one possible implementation, an airflow plate assembly is provided in the separation channel, the airflow plate assembly including multiple airflow plates, the multiple airflow plates being spaced apart along the extension direction of the separation channel;

[0010] Multiple airflow plates include alternating first airflow plates and second airflow plates. The first airflow plate is connected to the channel wall of the separation channel. The second airflow plate has a gap with the channel wall of the separation channel and is connected to the channel wall of the separation channel by a connector. Gas flow channels are formed between adjacent first airflow plates and second airflow plates, and between the second airflow plate and the channel wall of the separation channel.

[0011] When the gas encounters the first and second airflow plates, it changes direction and loses kinetic energy, causing turbulence in the gas flow. The dust velocity is reduced, and under the action of its own gravity, turbulence, and obstruction by the airflow plates, the dust in the gas falls and settles better, improving the separation effect between dust and gas and increasing the dust collection efficiency. This reduces the amount of dust entering the vacuum pump with the gas, thereby reducing the impact of dust on the vacuum pump.

[0012] In one possible implementation, the end of the airflow plate away from the channel wall of the separation channel is tilted away from the air inlet.

[0013] This can reduce the obstruction effect of the airflow plate on the gas and reduce the impact of the airflow plate on the pumping efficiency.

[0014] And / or, the airflow plate is annular;

[0015] The first gas flow channel has a wider circumferential coverage area on the channel wall of the separation channel, which can better separate dust and gas.

[0016] And / or, the channel wall of the separation channel has a plurality of separation holes spaced apart.

[0017] When dust is deposited, it can be discharged outside the separation channel through the separation hole, so that the gas inside the separation channel will not affect the deposition and collection of dust outside the separation channel, reducing the phenomenon of dust being stirred up by gas impact.

[0018] In one possible implementation, the collection chamber includes a first collection chamber and a second collection chamber connected in communication, a separation channel connected in communication with the first collection chamber, and the second collection chamber connected in communication with the exhaust port.

[0019] In one possible implementation, the collection chamber includes a first isolation member and a second isolation member that are disposed opposite to and spaced apart from each other, the first isolation member being located between the first collection chamber and the second collection chamber, and the second isolation member being located on the side of the second collection chamber opposite to the first isolation member;

[0020] The first isolation member has a plurality of first through holes spaced apart, and the first collection chamber and the second collection chamber are connected through the first through holes. The second isolation member has a plurality of second through holes spaced apart, and the second collection chamber is connected to the exhaust port through the second through holes.

[0021] One of the first through hole and the second through hole is located near the top of the collecting cavity, and the other of the first through hole and the second through hole is located near the bottom of the collecting cavity.

[0022] Because the first and second isolators have openings at different ends, airflow can pass through them from different points, changing the airflow direction, creating turbulence, and lengthening the gas flow path. Dust particles, under the influence of gravity, turbulence, and the obstruction of the airflow plate, can fall and deposit more effectively, reducing the impact of dust on the vacuum pump. Since there are a large number of first and second through-holes, and each through-hole has a small area, their dust-passing efficiency is low, but they do not affect gas flow, thus improving the dust isolation effect.

[0023] In one possible implementation, the collection chamber includes a third collection chamber, and the second collection chamber is connected to the exhaust port through the third collection chamber;

[0024] The third collection chamber is equipped with multiple condenser tube groups. Along the direction perpendicular to the bottom to the top of the gas processing device, the multiple condenser tube groups are spaced apart, and two adjacent condenser tube groups are connected.

[0025] Along the direction from bottom to top of the gas processing device, each condenser tube group includes multiple condenser tubes connected end to end in sequence. The multiple condenser tubes include alternating first condenser tubes and second condenser tubes. The first condenser tube extends in a direction perpendicular to the bottom to top of the gas processing device, and the second condenser tube extends in the direction from bottom to top of the gas processing device.

[0026] The condenser tube assembly can condense the gas, causing dust particles in the gas to condense upon contact with the cold air. This improves the dust capture capability of the third collection chamber, reduces the dust-induced agitation caused by gas impacting dust, enhances the separation of dust and gas, increases dust collection efficiency, and reduces the impact of dust on the vacuum pump.

[0027] In one possible implementation, the surface roughness of at least a portion of the inner surface of the cavity walls of the first and second collection cavities is greater than the surface roughness of the rest of the gas processing device.

[0028] The cavity wall with a larger surface roughness has a better adsorption effect on dust, which can improve the dust capture ability of the cavity walls of the first and second collection cavities and reduce the impact of dust on the vacuum pump.

[0029] In one possible implementation, an auxiliary channel is provided in the receiving cavity, and the separation channel and the collecting cavity are connected through the auxiliary channel;

[0030] Along the direction from the separation channel to the collection chamber, the opening area of ​​the auxiliary channel gradually decreases.

[0031] This can reduce the phenomenon of gas flowing back into the separation channel after entering the first collection chamber.

[0032] In one possible implementation, a maintenance opening is provided on the side wall of the housing, the maintenance opening connects the receiving cavity and the outside of the housing, and a protective cover is provided at the maintenance opening;

[0033] The protective element is detachably connected to the housing, and / or the protective element is transparent.

[0034] This makes disassembly and maintenance easier for operators. In addition, operators can observe the condition inside the cavity through the protective components.

[0035] A second aspect of this disclosure provides a semiconductor processing apparatus, including the gas processing apparatus described in the first aspect.

[0036] The semiconductor processing apparatus provided in this disclosure may include a gas processing device, which may include a housing with a receiving cavity. The housing has an inlet and an outlet, both connected to the outside of the housing. The receiving cavity may have a connecting separation channel and a collecting cavity. One end of the separation channel is connected to the inlet, and the other end is connected to the collecting cavity, which is connected to the outlet. Gas outside the housing enters the separation channel and collecting cavity through the inlet and exits the housing through the outlet. The collecting cavity can be used to collect dust from the gas, and the separation channel facilitates the separation of dust and gas, thereby improving dust deposition, reducing dust entering the vacuum pump with the gas, reducing the impact of dust on the vacuum pump, extending the life of the vacuum pump, reducing the failure rate of the vacuum pump, and thus reducing maintenance costs and shortening maintenance time.

[0037] The structure of this disclosure, as well as its other inventive objectives and beneficial effects, will become more apparent from the description of the preferred embodiments taken in conjunction with the accompanying drawings. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of the gas processing apparatus provided in the embodiments of this disclosure;

[0040] Figure 2 This is another structural schematic diagram of the gas processing apparatus provided in an embodiment of the present disclosure;

[0041] Figure 3 A partial structural schematic diagram of the separation channel provided in an embodiment of this disclosure;

[0042] Figure 4 A partial cross-sectional view of the separation channel provided in an embodiment of this disclosure;

[0043] Figure 5 Another partial cross-sectional view of the separation channel provided in an embodiment of this disclosure;

[0044] Figure 6 This is a schematic diagram of the structure of the channel wall through which dust passes through the separation channel according to an embodiment of the present disclosure;

[0045] Figure 7 This is another structural schematic diagram of the gas processing apparatus provided in an embodiment of the present disclosure;

[0046] Figure 8 This is another structural schematic diagram of the gas processing apparatus provided in an embodiment of the present disclosure;

[0047] Figure 9 This is a schematic diagram of the structure of the first isolation member provided in an embodiment of this disclosure;

[0048] Figure 10 This is a schematic diagram of the structure of the second isolator provided in an embodiment of the present disclosure;

[0049] Figure 11 A schematic diagram of the structure of the first collection chamber and the second collection chamber provided in the embodiments of this disclosure;

[0050] Figure 12 for Figure 1 A sectional view along the EE direction;

[0051] Figure 13 for Figure 1 Sectional view along the FF direction;

[0052] Figure 14 This is a schematic diagram of the structure of multiple condenser tube assemblies provided in an embodiment of this disclosure.

[0053] Explanation of reference numerals in the attached figures:

[0054] 100: Gas processing device; 110: Housing; 111: Receiving cavity;

[0055] 112: Air intake; 113: Exhaust outlet; 121: Separation channel;

[0056] 122: Separation orifice; 130: Airflow plate assembly; 130a: Airflow plate;

[0057] 130b: Airflow hole; 131: First airflow plate; 132: Second airflow plate;

[0058] 133: Connector; 141: First gas flow channel; 142: Second gas flow channel;

[0059] 150: Collection chamber; 151: First collection chamber; 152: Second collection chamber;

[0060] 153: Third collecting chamber; 161: First isolation element; 1611: First through hole;

[0061] 162: Second spacer; 1622: Second through hole; 163: Third spacer;

[0062] 170: Condenser coil assembly; 170a: Condenser coil; 171: First condenser coil;

[0063] 172: Second condenser tube; 173: Liquid inlet; 174: Liquid outlet;

[0064] 181: Auxiliary channel; 182: Extension channel; 183: Maintenance port;

[0065] 184: Protective component; 185: Gas pipeline; 186: Inlet pipeline;

[0066] 187: Exhaust pipe; 188: Isolation cover; 189: Screw;

[0067] 200: Dust. Detailed Implementation

[0068] In related technologies, the exhaust system may include a vacuum pump and a dust collection chamber. The vacuum pump is connected to the dust collection chamber. The gas in the processing chamber is transported to the dust collection chamber by the action of the vacuum pump. The dust in the gas is deposited at the bottom of the dust collection chamber under the action of gravity. The remaining gas is discharged from the dust collection chamber by the action of the vacuum pump.

[0069] However, since dust is mainly collected by gravity and settles at the bottom of the dust collection chamber, the dust is relatively light and moves quickly. It is also easily affected by airflow, resulting in poor dust settling and low dust collection efficiency. Consequently, dust can easily enter the vacuum pump with the gas, affecting the vacuum pump and shortening its service life.

[0070] This disclosure provides a gas processing device and a semiconductor processing device. The gas processing device may include a housing with a receiving cavity. The housing has an inlet and an outlet, both connected to the outside of the housing. The receiving cavity may have a connecting separation channel and a collecting cavity. One end of the separation channel is connected to the inlet, and the other end is connected to the collecting cavity, which is connected to the outlet. Gas outside the housing enters the separation channel and collecting cavity through the inlet and exits the housing through the outlet. The collecting cavity can be used to collect dust from the gas. The separation channel facilitates the separation of dust and gas, thereby improving dust deposition, reducing dust entering the vacuum pump with the gas, reducing the impact of dust on the vacuum pump, extending its lifespan, reducing its failure rate, and thus lowering maintenance costs and shortening maintenance time.

[0071] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0072] The following will combine Figures 1-14 The semiconductor processing apparatus provided in the embodiments of this disclosure will be described.

[0073] This disclosure provides a semiconductor processing apparatus for processing wafers or other semiconductor structures. The embodiments of this disclosure use wafer processing as an example. This processing may include, but is not limited to, doping, deposition, cleaning, and etching.

[0074] The semiconductor processing apparatus may include a process chamber and a gas handling unit 100 that are interconnected. Wafers can be processed within the process chamber to avoid the influence of the external environment. During wafer processing, reagents in the process chamber evaporate, and gases undergo chemical reactions, generating various byproducts. These byproducts may include particulate byproducts (i.e., dust 200). The gas handling unit 100 can be used to collect the dust 200 from the gases discharged from the process chamber.

[0075] For example, the semiconductor processing apparatus may include a vacuum pump, which can be connected to a gas handling apparatus 100, through which gas in the process chamber can be transferred to the gas handling apparatus 100. The vacuum pump can also be used to maintain the gas pressure in the process chamber to ensure that the process environment in the process chamber meets the process requirements.

[0076] The gas processing apparatus 100 provided in the embodiments of this disclosure will be described below.

[0077] See Figure 1 and Figure 2 The gas processing device 100 may include a housing 110, which has a receiving cavity 111. The housing 110 can protect other structural components located in the receiving cavity 111. In addition, the housing 110 can also provide a mounting and support foundation for other structural components.

[0078] For example, the housing 110 may be provided with an air inlet 112 and an exhaust outlet 113, which can be connected to the outside of the housing 110. The air inlet 112 can be connected to the process chamber, and the gas discharged from the process chamber can enter the receiving cavity 111 through the air inlet 112. The exhaust outlet 113 can be connected to a vacuum pump, and the gas in the process chamber, under the action of the vacuum pump, enters the receiving cavity 111 through the air inlet 112, and continues to be discharged from the receiving cavity 111 through the exhaust outlet 113 under the action of the vacuum pump. For example, an air inlet pipe 186 can be provided at the air inlet 112, through which the air inlet 112 can be connected to the process chamber, and an exhaust pipe 187 can be provided at the exhaust outlet 113, through which the exhaust outlet 113 can be connected to the vacuum pump.

[0079] In some embodiments, see Figure 1 and Figure 2 The receiving cavity 111 may have a connecting separation channel 121 and a collecting cavity 150. The separation channel 121 facilitates the separation between dust 200 and gas, reducing the agitation caused by the gas impacting the dust 200, improving the dust 200 deposition effect, thereby reducing the amount of dust 200 entering the vacuum pump with the gas, reducing the impact of dust 200 on the vacuum pump, extending the vacuum pump's lifespan, reducing the frequency of vacuum pump maintenance, and lowering maintenance costs and time. The collecting cavity 150 can collect the dust 200.

[0080] One end of the separation channel 121 can be connected to the air inlet 112, allowing gas to enter the separation channel 121 through the air inlet 112. The other end of the separation channel 121 can be connected to the collection chamber 150, which is connected to the exhaust port 113. After passing through the separation channel 121, the gas can enter the collection chamber 150 and exit through the exhaust port 113.

[0081] The following describes the separation channel 121 provided in the embodiments of this disclosure.

[0082] The cross-sectional shape of the channel wall of the separation channel 121 along the extension direction perpendicular to the separation channel 121 can be circular, elliptical, or polygonal.

[0083] See Figure 3 and Figure 4An airflow plate assembly 130 may be provided in the separation channel 121. The airflow plate assembly 130 may include multiple airflow plates 130a, which are spaced apart along the extension direction of the separation channel 121. The multiple airflow plates 130a may include alternating first airflow plates 131 and second airflow plates 132. The first airflow plate 131 may be connected to the channel wall of the separation channel 121, preventing gas from passing through the connection between the first airflow plate 131 and the channel wall of the separation channel 121. The second airflow plate 132 may have a gap with the channel wall of the separation channel 121, allowing airflow to pass through the gap. The second airflow plate 132 and the channel wall of the separation channel 121 may be connected by a connector 133. The connector 133 is small in size and has little or negligible obstruction to the gas. There may be at least one connector 133. When there are multiple connectors 133, they may be spaced apart between the second airflow plate 132 and the channel wall of the separation channel 121. Among them, a gas flow channel (i.e., a first gas flow channel 141) is formed between the adjacent first airflow plate 131 and the second airflow plate 132, and between the second airflow plate 132 and the channel wall of the separation channel 121. Figure 4 Q1 and Q2 show schematic diagrams of gas flow in the first gas channel 141 and the second gas channel 142.

[0084] See some examples. Figure 5 The airflow plate assembly 130 can be disposed on a portion of the circumferential wall of the separation channel 121. For example, the airflow plate assembly 130 can be disposed on the bottom wall and / or side wall of the separation channel 121. Taking the airflow plate assembly 130 disposed on the bottom wall of the separation channel 121 as an example, the bottom of the first airflow plate 131 can be connected to the bottom wall of the separation channel 121, and the top of the first airflow plate 131 can be spaced apart from the top wall of the separation channel 121. A first gas flow channel 141 is formed between adjacent first airflow plates 131 and second airflow plates 132, and between the second airflow plate 132 and the bottom wall of the separation channel 121. A second gas flow channel 142 is formed between the airflow plate assembly 130 and the top wall of the separation channel 121. See other examples. Figure 3 and Figure 4The airflow plate assembly 130 can be arranged in a ring around the circumference of the channel wall of the separation channel 121. Both the first airflow plate 131 and the second airflow plate 132 can be annular, and both the first airflow plate 131 and the second airflow plate 132 can have airflow holes 130b. A first gas flow channel 141 is formed between adjacent first airflow plates 131 and second airflow plates 132, and between the second airflow plate 132 and the channel wall of the separation channel 121. The airflow holes 130b of the first airflow plate 131 and the airflow holes 130b of the second airflow plate 132 are interconnected to form the second gas flow channel 142. With this arrangement, the first gas flow channel 141 has a wider circumferential coverage area on the channel wall of the separation channel 121, which can better separate the dust 200 and the gas.

[0085] After the gas enters the separation channel 121, part of the gas can enter the first gas flow channel 141 (i.e., the first part of the gas), and the other part of the gas can enter the second gas flow channel 142 (i.e., the second part of the gas). For example, the proportion of the first part of the gas can be smaller, and the proportion of the second part of the gas can be larger, which can reduce the impact of the first part of the gas on the pumping efficiency. After the first part of the gas passes through the first gas flow channel 141 between two adjacent first airflow plates 131, it will return to the second gas flow channel 142 and merge with the second part of the gas. Then, it will continue to be split into the first part of the gas and the second part of the gas, and enter the first gas flow channel 141 and the second gas flow channel 142 respectively. The gas is repeatedly split and merged in the separation channel 121, and finally passes through the separation channel 121 (i.e., the second part of the gas). Figure 6 Arrow A in the diagram indicates the direction in which the gas passes through separation channel 121.

[0086] When the gas is split to form the first part of the gas, the first part of the gas changes direction upon encountering the first airflow plate 131 and the second airflow plate 132, causing turbulence in the airflow within the first part of the gas. Furthermore, the first part of the gas loses kinetic energy upon encountering the first airflow plate 131 and the second airflow plate 132, reducing the dust velocity. Under the influence of gravity, turbulence, and the obstruction of the airflow plate 130a, the dust 200 in the first part of the gas achieves better falling and deposition, improving the separation effect between dust 200 and gas, and increasing the collection efficiency of dust 200. This reduces the amount of dust 200 entering the vacuum pump with the gas, thereby reducing the impact of dust 200 on the vacuum pump, extending its service life, reducing its failure rate, and lowering maintenance costs and time. Because the first gas flow channel 141 has a relatively long path, its separation effect on dust 200 and gas is improved, further enhancing the collection efficiency of dust 200 and reducing the impact of dust 200 on the vacuum pump. Secondly, since the velocity of the first part of the gas is reduced in the first gas flow channel 141, the impact of the first part of the gas on the dust 200 is reduced, thereby reducing the flying phenomenon caused by gas impact, so that the dust 200 and the gas are better separated, thereby further improving the collection efficiency of the dust 200 and reducing the impact of the dust 200 on the vacuum pump.

[0087] Understandably, the lower the velocity of dust 200, the easier it is for it to aggregate and form larger particles, thus increasing its weight. This facilitates the deposition and separation of dust 200 from the gas under gravity. A longer path in the first gas flow channel 141 increases the probability of collisions as dust 200 passes through it, further promoting the formation of larger particles and facilitating their deposition and separation from the gas under gravity. Increased dust 200 weight also reduces the amount of airborne particles caused by gas impacts, further improving collection efficiency and minimizing the impact of dust 200 on the vacuum pump.

[0088] For example, see Figure 5 and Figure 6The end of the airflow plate 130a facing away from the channel wall of the separation channel 121 is inclined away from the inlet 112. This is equivalent to the end of the airflow plate 130a facing away from the channel wall of the separation channel 121 being inclined towards the direction from the inlet to the outlet of the separation channel 121, thereby reducing the obstruction effect of the airflow plate 130a on the gas and reducing its impact on the extraction efficiency. When the first and second parts of gas merge, both parts flow along the direction from the inlet to the outlet of the separation channel 121, thus avoiding eddies and energy loss caused by the collision of the two parts of gas, resulting in a higher velocity after the two parts of gas merge. Furthermore, the overall gas flow is in a convergent state, resulting in less resistance to the gas. The airflow velocity in the convergent state will increase, thus increasing the velocity of the gas after passing through the separation channel 121. This prevents the separation channel 121 from changing the gas flow direction during the separation of gas and dust 200, which would affect the extraction efficiency. Secondly, it can also make the first part of the gas more likely to deposit at the corner of the first gas flow channel 141.

[0089] For example, see Figure 3 and Figure 6 The separation channel 121 may have multiple separation holes 122 spaced apart on its channel wall, and at least a portion of the separation holes 122 may communicate with the first gas flow channel 141. Since dust 200 can be effectively separated from gas in the first gas flow channel 141, the deposition effect of dust 200 is good. When dust 200 is deposited, it can be discharged outside the separation channel 121 through the separation holes 122, ensuring that the gas inside the separation channel 121 cannot affect the deposition and collection of dust 200 outside the separation channel 121, reducing the phenomenon of dust being stirred up by gas impacting dust 200. Furthermore, it allows dust 200 to be effectively discharged from the first gas flow channel 141, achieving preliminary separation of gas and dust 200, and preventing dust 200 from accumulating in the first gas flow channel 141 and affecting its ventilation effect.

[0090] In some embodiments, see Figure 7 The outside of the separation channel 121 can be covered with an isolation cover 188. The isolation cover 188 can prevent other structural components in the dust collection cavity 111 from being soiled by the dust 200 discharged from the separation channel 121, thereby reducing the difficulty and time of cleaning the dust 200.

[0091] In some examples, one end of the outlet of the separation channel 121 is spaced apart from and not connected to the collection chamber 150. In embodiments with an isolation cover 188, the isolation cover 188 can also cover the inlet of the collection chamber 150. When gas exits from the separation channel 121, it first enters the space between the isolation cover 188 and the separation channel 121, and then enters the collection chamber 150 through the inlet of the collection chamber 150. In other examples, see... Figure 8 One end of the air outlet of the separation channel 121 is connected to the cavity wall of the collection chamber 150, making the gas path between the separation channel 121 and the collection chamber 150 relatively sealed. This can reduce the dirt accumulation of dust 200 in the gas flowing out of the separation channel 121 on other structural components in the receiving chamber 111, reduce the difficulty of cleaning dust 200 and reduce cleaning time. In addition, it can also increase the speed of the gas entering the collection chamber 150 from the separation channel 121.

[0092] The collection cavity 150 provided in the embodiments of this disclosure will be described below.

[0093] See Figure 2 and Figure 9 The collection chamber 150 may include a first collection chamber 151 and a second collection chamber 152 that are connected. A separation channel 121 may be connected to the first collection chamber 151, and the second collection chamber 152 may be connected to an exhaust port 113. A first isolation member 161 may be provided between the first collection chamber 151 and the second collection chamber 152. The first isolation member 161 has multiple spaced-apart first through holes 1611, through which the first collection chamber 151 and the second collection chamber 152 can be connected. With this arrangement, dust 200 loses kinetic energy when it encounters the first isolation member 161, which is beneficial for the dust 200 to deposit under gravity. Gas can flow from the first collection chamber 151 into the second collection chamber 152 through the first through holes 1611, while the first isolation member 161 has a certain blocking effect on the dust 200, thereby improving the deposition effect of dust 200 in the first collection chamber 151.

[0094] See Figure 2 and Figure 10A second isolation member 162 may be provided on the side of the second collection chamber 152 opposite to the first isolation member 161. The first isolation member 161 and the second isolation member 162 may be arranged opposite each other and spaced apart on opposite sides of the second collection chamber 152. The second isolation member 162 may have a plurality of spaced-apart second through holes 1622, through which the second collection chamber 152 is connected to the exhaust port 113. With this arrangement, when the dust 200 comes into contact with the second isolation member 162, it loses kinetic energy, which is conducive to the deposition of the dust 200 under the action of gravity. Gas can flow out of the second collection chamber 152 through the second through holes 1622, and the second isolation member 162 has a certain blocking effect on the dust 200, which can improve the deposition effect of the dust 200 in the second collection chamber 152.

[0095] It is understandable that, since there are a large number of first through holes 1611 and second through holes 1622, and the area of ​​each through hole is small, their efficiency in passing dust 200 is low, but it will not affect the passage of gas, thereby improving the isolation effect on dust 200.

[0096] For example, one of the first through hole 1611 and the second through hole 1622 may be disposed near the top of the collecting cavity 150, and the other of the first through hole 1611 and the second through hole 1622 may be disposed near the bottom of the collecting cavity 150. See, for example, Figure 9 and Figure 10 The first through hole 1611 can be located at the top of the first spacer 161, and the second through hole 1622 can be located at the bottom of the second spacer 162. Alternatively, the first through hole 1611 can be located at the bottom of the first spacer 161, and the second through hole 1622 can be located at the top of the second spacer 162. See also Figure 8 and Figure 11 When the gas passes through the first through hole 1611 and the second through hole 1622 in sequence, because the first isolation member 161 and the second isolation member 162 have through holes at different ends, the airflow can pass through different ends of the first isolation member 161 and the second isolation member 162, which will change the airflow direction, form turbulence, and prolong the gas flow path. Under the action of its own gravity, turbulence, and the obstruction of the airflow plate 130a, the dust 200 can achieve better falling and deposition, which is conducive to improving the deposition effect of dust 200 in the first collection chamber 151 and the second collection chamber 152, improving the dust removal effect, and also reducing the dust caused by airflow impact, reducing the impact of dust 200 on the vacuum pump. Figure 8 and Figure 11 Arrow A in the diagram indicates the direction of gas flow in the gas processing device 100.

[0097] For example, the surface roughness of some or all of the inner surfaces of the walls of the first collecting chamber 151 and the second collecting chamber 152 can be greater than the surface roughness of the rest of the gas processing device 100. A wall with a larger surface roughness has a better adsorption effect on dust 200, which can improve the dust 200 capture capacity of the walls of the first collecting chamber 151 and the second collecting chamber 152, improve the separation effect between dust 200 and gas, improve the dust 200 collection efficiency, and reduce the dust 200 being stirred up by gas impacting dust 200, thus reducing the impact of dust 200 on the vacuum pump. In addition, it allows more dust 200 to be deposited in the first collecting chamber 151 and the second collecting chamber 152, reducing the amount of dust 200 deposited in the rest of the gas processing device 100. Since the internal structure of the first collecting chamber 151 and the second collecting chamber 152 is relatively simple, cleaning is easier, thereby reducing the difficulty of cleaning dust 200 and saving cleaning time. For example, sandblasting can be used to treat at least a portion of the inner surface of the cavity wall of the first collection cavity 151 and the second collection cavity 152 to increase the surface roughness of the inner surface of the at least a portion of the cavity wall.

[0098] See Figure 12 and Figure 13 The collection chamber 150 may include a third collection chamber 153, and the second collection chamber 152 is connected to the exhaust port 113 through the third collection chamber 153. The second isolation member 162 is located between the second collection chamber 152 and the third collection chamber 153, and the second collection chamber 152 and the third collection chamber 153 can be connected through the second through hole 1622.

[0099] For example, a condenser tube assembly 170 may be provided in the third collection chamber 153, and a flowing coolant may be provided in the condenser tube assembly 170. The condenser tube assembly 170 can produce a condensation effect on the gas, causing byproducts in the gas (including dust 200, etc.) to condense upon cooling, thereby improving the capture capacity of the third collection chamber 153 for dust 200, reducing the stirring phenomenon caused by gas impacting dust 200, improving the separation effect of dust 200 and gas, improving the collection efficiency of dust 200, and reducing the impact of dust 200 on the vacuum pump.

[0100] For example, see Figure 13 and Figure 14Multiple condenser tube assemblies 170 can be used. A larger number of condenser tube assemblies 170 result in better overall condensation performance, improving the capture capacity of dust 200, increasing dust collection efficiency, and reducing the impact of dust 200 on the vacuum pump. Multiple condenser tube assemblies 170 can be spaced apart along a first direction X, and each condenser tube assembly 170 can include multiple condenser tubes 170a connected end-to-end along a second direction Y. The first direction X and the second direction Y are different. For example, the second direction Y can be the direction from the bottom to the top of the gas processing device 100, and the first direction X can be a direction perpendicular to the bottom to the top of the gas processing device 100. Adjacent condenser tube assemblies 170 are connected. In the three adjacent condenser tube groups 170, the bottom of the middle condenser tube group 170 can be connected to the bottom of one of the two condenser tube groups 170 located on both sides, and the top of the middle condenser tube group 170 can be connected to the top of the other condenser tube group 170 located on both sides. This allows the tops and bottoms of the multiple condenser tube groups 170 to be connected end to end in sequence. The cooling path formed by the multiple condenser tube groups 170 is relatively long, which can improve the cooling effect of the multiple condenser tube groups 170, improve the dust capture capability of the third collection chamber 153, improve the separation effect of dust 200 and gas, improve the collection efficiency of dust 200, and reduce the impact of dust 200 on the vacuum pump.

[0101] Among them, see Figure 12 The inlet 173 and outlet 174 of the condenser pipe formed by multiple condenser tube assemblies 170 can extend from the housing 110 to facilitate connection with an external coolant source. For example, the inlet 173 and outlet 174 can extend from the side of the housing 110.

[0102] See also Figure 13 and Figure 14 Along the direction from bottom to top (second direction Y) of the gas processing device 100, each condenser tube group 170 may include multiple condenser tubes 170a connected end-to-end in sequence. These multiple condenser tubes 170a may include alternating first condenser tubes 171 and second condenser tubes 172. The extension directions of the first condenser tubes 171 and second condenser tubes 172 are different, resulting in a longer cooling path for each condenser tube group 170. This improves the cooling effect of a single condenser tube group 170, enhances the dust 200 capture capability of the third collection chamber 153, improves the separation effect between dust 200 and gas, increases the dust 200 collection efficiency, and reduces the impact of dust 200 on the vacuum pump. For example, the first condenser tube 171 may extend along a third direction Z, which is different from the first direction X and the second direction Y. For example, the third direction Z may be perpendicular to the direction from bottom to top of the gas processing device 100, and the second condenser tube 172 may extend along the second direction Y.

[0103] In some embodiments, see Figure 8 The third collection chamber 153 can be connected to the exhaust port 113 of the housing 110 via a gas pipe 185. The inlet of the gas pipe 185 can be located at the top of the multiple condenser tube groups 170, which facilitates the discharge of gas from the third collection chamber 153. In the embodiment where the second through hole 1622 is located at the bottom of the second isolation member 162, the flow path of the gas in the third collection chamber 153 can be extended, resulting in better condensation of the gas. This can improve the capture capacity of the third collection chamber 153 for dust 200, improve the separation effect between dust 200 and gas, improve the collection efficiency of dust 200, and reduce the impact of dust 200 on the vacuum pump. Along the extension direction of the gas pipe 185, the opening area of ​​the gas pipe 185 can be equal everywhere or at least partially different. For example, the opening area of ​​the end of the gas pipe 185 near the third collection chamber 153 can be larger than the opening area of ​​the rest, so that the opening area of ​​the end of the gas pipe 185 near the third collection chamber 153 is larger, which is conducive to the discharge of gas in the third collection chamber 153. The opening area of ​​the rest of the gas pipe 185 is smaller, which can reduce the volume occupied by the gas pipe 185 and help to reduce the volume of the gas processing device 100.

[0104] The auxiliary channel 181 provided in the embodiments of this disclosure will be described below.

[0105] See Figure 8 An auxiliary channel 181 may be provided in the receiving cavity 111, through which the separation channel 121 and the collecting cavity 150 can be connected. For example, the auxiliary channel 181 may extend at least partially into the first collecting cavity 151. In the embodiment where the first through hole 1611 is located at the top of the first isolation member 161, the auxiliary channel 181 allows the gas to move towards the bottom of the first collecting cavity 151 when it enters the first collecting cavity 151. This causes the gas to change its airflow direction and create turbulence when it passes through the first through hole 1611, thus extending the gas flow path. Under the action of its own gravity, turbulence, and the obstruction of the first isolation member 161, the dust 200 can achieve better falling and deposition, which is beneficial to improving the deposition effect of the dust 200 in the first collecting cavity 151, improving the dust removal effect, and reducing the impact of the dust 200 on the vacuum pump.

[0106] For example, along the direction from the separation channel 121 to the collection chamber 150, the opening area of ​​the auxiliary channel 181 can gradually decrease, which can reduce the phenomenon of gas flowing back into the separation channel 121 after entering the first collection chamber 151. See Figure 1In an embodiment where the separation channel 121 and the collection chamber 150 are not connected, the auxiliary channel 181 can be spaced at the bottom of the separation channel 121, and the air inlet of the auxiliary channel 181 is opposite to the separation channel 121, so that the dust 200 can fall directly into the air inlet of the auxiliary channel 181 under the action of gravity, and the dust 200 can easily enter the collection chamber 150 along the inclined channel wall of the separation channel 121.

[0107] For example, see Figure 1 An extension channel 182 can be provided at the end of the auxiliary channel 181 away from the separation channel 121. The extension channel 182 can increase the length of the auxiliary channel 181, so that when the airflow enters the first collection chamber 151, it is closer to the bottom of the first collection chamber 151. When the gas passes through the first through hole 1611 in the first collection chamber 151, it will change the airflow direction and form turbulence, extending the gas flow path. Under the action of its own gravity, turbulence, and the obstruction of the first isolation member 161, the dust 200 can achieve better falling and deposition, which is beneficial to improving the deposition effect of dust 200 in the first collection chamber 151, improving the dust removal effect, and reducing the impact of dust 200 on the vacuum pump. For example, the opening area of ​​the extension channel 182 can be smaller than the opening area of ​​the auxiliary channel 181, thereby reducing the volume occupied by the extension channel 182 in the first collection chamber 151.

[0108] The maintenance port 183 provided in the embodiments of this disclosure will be described below.

[0109] In some embodiments, see Figure 12 and Figure 13 A maintenance port 183 may be provided on the side wall of the housing 110. The maintenance port 183 connects the receiving cavity 111 and the outside of the housing 110, allowing operators to easily perform maintenance and cleaning operations on the structural components inside the receiving cavity 111 through the maintenance port 183. A protective member 184 may be provided to cover the maintenance port 183, which can make the housing 110 form a relatively sealed environment and prevent gas from escaping from the receiving cavity 111 to the external environment.

[0110] For example, the protective element 184 is detachably connected to the housing 110, for example, via a threaded connection (such as...). Figure 1 The protective component 184 can be detachably connected via screws (189), plug-in connections, snap-fit ​​connections, etc., making disassembly and maintenance operations more convenient for operators. This simplifies maintenance procedures, saves maintenance time, reduces maintenance costs, and is more ergonomic. For example, the area of ​​the protective component 184 can be made larger, thereby increasing the working space. The gas handling device 100 provided in this embodiment can be maintained by a single person, and the maintenance time can be shortened to 2 hours.

[0111] For example, the protective element 184 can be transparent, allowing the operator to observe the situation in the receiving cavity 111 through the protective element 184. For instance, the operator can observe the collection of dust 200 and clean the dust 200 in a timely manner.

[0112] It is understood that a portion of the cavity wall of at least one of the first collection cavity 151, the second collection cavity 152, and the third collection cavity 153 can be formed by the housing 110 and / or the protective member 184, thereby simplifying the structure of the gas processing device 100 and reducing costs. For example, the top wall of the first collection cavity 151, the second collection cavity 152, and the third collection cavity 153 can be formed by the third isolation member 163. A portion of the third isolation member 163, the first isolation member 161, a portion of the protective member 184, and a portion of the housing 110 together enclose the first collection cavity 151; a portion of the third isolation member 163, the first isolation member 161, the second isolation member 162, a portion of the protective member 184, and a portion of the housing 110 together enclose the second collection cavity 152; and a portion of the third isolation member 163, the second isolation member 162, a portion of the protective member 184, and a portion of the housing 110 together enclose the third collection cavity 153. Alternatively, the cavity wall of at least one of the first collection cavity 151, the second collection cavity 152, and the third collection cavity 153 may be formed by other structural members other than the housing 110 and the protective member 184.

[0113] It should be noted that the numerical values ​​and ranges involved in the embodiments of this disclosure are approximate values. Due to the influence of the manufacturing process, there may be a certain range of errors, which can be considered negligible by those skilled in the art.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A gas treatment device, characterized by Includes: a housing having a receiving cavity, an air inlet and an exhaust outlet provided on the housing, the air inlet and the exhaust outlet communicating with the outside of the housing; The receiving cavity has a connecting separation channel and a collecting cavity. One end of the separation channel is connected to the air inlet, and the other end of the separation channel is connected to the collecting cavity. The channel wall of the separation channel has a plurality of separation holes spaced apart. The separation channel can separate gas and dust. The collecting cavity is connected to the exhaust port.

2. The gas processing device according to claim 1, characterized in that An airflow plate assembly is provided in the separation channel, the airflow plate assembly includes multiple airflow plates, and the multiple airflow plates are spaced apart along the extension direction of the separation channel; The plurality of airflow plates include alternating first airflow plates and second airflow plates. The first airflow plate is connected to the channel wall of the separation channel. The second airflow plate has a gap with the channel wall of the separation channel and is connected to the channel wall of the separation channel by a connector. Gas flow channels are formed between adjacent first airflow plates and second airflow plates, and between the second airflow plate and the channel wall of the separation channel.

3. The gas treatment device according to claim 2, characterized in that The end of the airflow plate that is away from the channel wall of the separation channel is inclined in a direction away from the air inlet; And / or, the airflow plate is annular.

4. The gas treatment device according to any one of claims 1 to 3, characterized in that The collection chamber includes a first collection chamber and a second collection chamber that are connected to each other. The separation channel is connected to the first collection chamber, and the second collection chamber is connected to the exhaust port.

5. The gas treatment device according to claim 4, characterized in that The collection chamber includes a first isolation member and a second isolation member that are arranged opposite to and spaced apart. The first isolation member is located between the first collection chamber and the second collection chamber, and the second isolation member is located on the side of the second collection chamber opposite to the first isolation member. The first isolation member has a plurality of first through holes spaced apart, and the first collection chamber and the second collection chamber are connected through the first through holes. The second isolation member has a plurality of second through holes spaced apart, and the second collection chamber is connected to the exhaust port through the second through holes. One of the first through hole and the second through hole is disposed near the top of the collecting cavity, and the other of the first through hole and the second through hole is disposed near the bottom of the collecting cavity.

6. The gas processing apparatus according to claim 4, wherein The collection chamber includes a third collection chamber, and the second collection chamber is connected to the exhaust port through the third collection chamber; The third collection chamber is provided with multiple condenser tube groups, which are spaced apart along a direction perpendicular to the bottom to the top of the gas processing device, and adjacent condenser tube groups are connected. Along the direction from bottom to top of the gas processing device, each of the condenser tube groups includes a plurality of condenser tubes connected end to end in sequence. The plurality of condenser tubes include alternating first condenser tubes and second condenser tubes. The first condenser tube extends in a direction perpendicular to the bottom to top of the gas processing device, and the second condenser tube extends in the direction from bottom to top of the gas processing device.

7. The gas processing apparatus according to claim 4, wherein The surface roughness of at least a portion of the inner surface of the cavity walls of the first and second collection cavities is greater than the surface roughness of the rest of the gas processing device.

8. The gas treatment device according to any one of claims 1 to 3, characterized in that An auxiliary channel is provided in the receiving cavity, and the separation channel and the collecting cavity are connected through the auxiliary channel; Along the direction from the separation channel to the collection chamber, the opening area of ​​the auxiliary channel gradually decreases.

9. The gas treatment device according to any one of claims 1 to 3, characterized in that A maintenance opening is provided on the side wall of the housing, the maintenance opening connects the receiving cavity and the outside of the housing, and a protective cover is provided at the maintenance opening; The protective component is detachably connected to the housing, and / or the protective component is transparent.

10. A semiconductor processing apparatus, characterized by comprising: The gas processing apparatus includes any one of the gas processing apparatuses described in claims 1-9 above.

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