Substrate processing apparatus

Abstract

The present inventive concept provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment includes a housing having a processing space in which a substrate is processed, a support unit which supports a substrate in the processing space, and a gas supply unit which supplies a gas to the processing space, wherein a heat transfer channel which supplies a heat transfer medium to a substrate supported by the support unit, a pin hole which defines a lift path for a lift pin which lifts the substrate supported by the support unit, and a connection portion which intercommunicates the heat transfer channel and the pin hole are formed inside the support unit, and the connection portion includes a porous structure.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to an apparatus for processing a substrate, and more specifically, to a substrate processing apparatus for plasma processing of a substrate. Background Technology

[0002] Plasma refers to ionized gaseous matter that includes ions, free radicals, electrons, etc. Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. The manufacturing process of semiconductor devices may include an etching process that uses plasma to remove thin films formed on a substrate (such as a wafer). The etching process occurs when ions and / or free radicals of the plasma collide with or react with the thin film on the substrate.

[0003] During plasma treatment of the substrate, the substrate temperature needs to be kept constant. To maintain a constant substrate temperature, a temperature control unit, such as a heater or refrigerant channel, can be provided in the support unit supporting the substrate. Furthermore, to facilitate effective heat exchange between the temperature control unit and the substrate, a heat transfer gas channel can generally be provided for supplying heat transfer gas to the lower surface of the substrate.

[0004] When plasma collides with the thin film on the substrate, the temperature of the substrate rises. Correspondingly, when treating the substrate with plasma, a heat transfer gas is supplied to the lower surface of the substrate. The plasma can penetrate into the support unit through a tiny space between the lower surface of the substrate and the upper surface of the support unit. The plasma penetrating the support unit affects components within the support unit that are susceptible to arcing.

[0005] The pin hole, serving as the movement path of the lifting pin that moves the substrate up and down the support unit, is a hole passing through the upper surface of the support unit and is formed inside the support unit. Therefore, plasma penetrates the pin hole and affects the pin hole and the components adjacent to it. The pin hole and the components adjacent to it are exposed to plasma for extended periods, causing arcing. In particular, when plasma is formed by applying high-voltage radio frequency (RF) power to meet recently achieved high aspect ratio etch rates, the pin hole and the components adjacent to it are exposed to strong plasma. Therefore, the arcing phenomenon in the pin hole and the components adjacent to it is exacerbated. Summary of the Invention

[0006] An embodiment of the present invention provides a substrate processing apparatus that minimizes the occurrence of arcing phenomena caused by plasma.

[0007] Furthermore, embodiments of the present invention also provide a substrate processing apparatus that can minimize the occurrence of arcing phenomena caused by plasma near pin holes.

[0008] Furthermore, embodiments of the present invention also provide a substrate processing apparatus that can supply a heat transfer medium to the lower surface of a substrate through pin holes to adjust the temperature of the substrate, while simultaneously adjusting the temperature inside the pin holes.

[0009] The present invention is not limited thereto, and those skilled in the art will clearly understand other unmentioned aspects of the present invention from the following description.

[0010] The present invention provides a substrate processing apparatus. According to one embodiment, the substrate processing apparatus includes: a housing having a processing space in which the substrate is processed; a support unit configured to support the substrate in the processing space; and a gas supply unit configured to supply gas to the processing space. The support unit has a heat transfer channel, a pin hole, and a connecting portion formed within it. The heat transfer channel is configured to supply a heat transfer medium to the substrate supported by the support unit. The pin hole defines a lifting path for a lifting pin configured to lift the substrate supported by the support unit. The connecting portion communicates with the heat transfer channel and the pin hole, and the connecting portion includes a porous structure.

[0011] According to one embodiment, the support unit may include: a support plate configured to support the substrate; and a body located below the support plate, wherein high-frequency power is applied to the body to generate plasma in the processing space, wherein a lifting pin sleeve having a hollow structure forming part of the pin hole may be disposed inside the body, and the connecting portion may be formed on the side surface of the lifting pin sleeve.

[0012] According to one embodiment, the connecting portion may be integrally formed with the side surface of the lifting pin sleeve.

[0013] According to one embodiment, an O-ring configured to seal the outer surface of the lifting pin and the side surface of the hollow structure may be provided in the hollow structure, and the O-ring is located below the connecting portion when viewed from the front.

[0014] According to one embodiment, the heat transfer channel may include: a main channel formed inside the body, through which the heat transfer medium circulates; a first channel connected to the main channel, formed in a vertical direction inside the body and the support plate, and configured to supply the heat transfer medium to the lower surface of the substrate; and a second channel formed inside the body and connecting the main channel and the connecting portion.

[0015] According to one embodiment, the diameter of the second flow channel may be equal to or smaller than the diameter of the connecting portion.

[0016] According to one embodiment, the lower surface of the support plate and the upper surface of the body can be attached to each other by an adhesive layer.

[0017] According to one embodiment, compared to the adhesive layer and the second flow channel, the lifting pin sleeve and the connecting portion may each comprise a material with relatively higher plasma resistance.

[0018] According to one embodiment, the materials of the lifting pin sleeve and the connecting portion may each include ceramic.

[0019] According to one embodiment, the surface of the second flow channel can be anodized.

[0020] According to one embodiment, the main flow channel may include: a central flow channel formed in a central region including the center of the body; and an edge flow channel formed in an edge region surrounding the central region, and the second flow channel may connect the central flow channel and / or the edge flow channel to the connecting portion.

[0021] According to one embodiment, a plurality of pin holes may be formed inside the support unit; a plurality of second flow channels may be formed inside the main body, and the plurality of pin holes may be in fluid communication with the plurality of second flow channels respectively.

[0022] Furthermore, the present invention also provides a substrate processing apparatus. According to one embodiment, the substrate processing apparatus includes a housing having a processing space in which the substrate is processed; a support unit configured to support the substrate in the processing space; a gas supply unit configured to supply gas to the processing space; and a plasma source configured to generate plasma by exciting the gas, wherein the support unit includes a heat transfer channel formed inside the support unit and configured to supply a heat transfer medium to the substrate supported by the support unit; a lifting pin sleeve disposed inside the support unit and having a hollow structure; and a lifting pin that moves up and down through the hollow structure and is configured to move the substrate supported by the support unit; and a connecting portion including a porous structure formed on a side surface of the lifting pin sleeve, and the heat transfer channel being connected to the connecting portion.

[0023] According to one embodiment, the connecting portion and the lifting pin sleeve can be sintered simultaneously and integrally formed.

[0024] According to one embodiment, the upper portion of the lifting pin sleeve may have a first diameter, and the lower portion of the lifting pin sleeve may have a second diameter greater than the first diameter, and the connecting portion may be formed above the lifting pin sleeve.

[0025] According to one embodiment, the support unit may further include: a support plate configured to support the substrate; and a body located below the support plate, wherein high-frequency power is applied to the body to generate plasma in the processing space, the heat transfer channel being formed inside the body; a lifting pin sleeve being disposed inside the body; the upper surface of the lifting pin sleeve being located between the upper surface of the body and the lower surface of the support plate, and the lower surface of the support plate and the upper surface of the body, as well as the lower surface of the support plate and the upper surface of the lifting pin sleeve, may be adhered to each other by an adhesive layer.

[0026] According to one embodiment, the lifting pin sleeve and the connecting portion may each comprise a material with relatively stronger plasma resistance compared to the adhesive layer.

[0027] According to one embodiment, an O-ring may be provided in the hollow structure, the O-ring being configured to seal the outer surface of the lifting pin and the side surface of the hollow structure.

[0028] According to one embodiment, when viewed from the front, the O-ring may be located below the connecting portion.

[0029] Furthermore, the present invention also provides a substrate processing apparatus. According to one embodiment, the substrate processing apparatus includes: a housing having a processing space in which the substrate is processed; a support unit configured to support the substrate in the processing space; a gas supply unit configured to supply gas to the processing space; and a plasma source configured to generate plasma by exciting the gas, wherein the support unit includes: a support plate configured to support the substrate; a body located below the support plate and in which high-frequency power is applied to generate plasma in the processing space; a heat transfer channel formed inside the body and configured to supply a heat transfer medium to the substrate supported by the support unit; and a lifting pin sleeve disposed thereon. A hollow structure is formed inside the main body; and a lifting pin is formed by lifting and lowering through the hollow structure and configured to lift the substrate supported by the support unit from the support plate; the heat transfer channel includes: a main channel formed inside the main body, through which the heat transfer medium circulates; a first channel connected to the main channel, formed in the vertical direction inside the main body and the support plate, and configured to supply the heat transfer medium to the lower surface of the substrate; and a second channel formed inside the main body and configured to allow fluid communication between the main channel and the hollow structure, wherein a connecting portion having a porous structure can be integrally formed on the side surface of the lifting pin sleeve, and one end of the second channel can be connected to the connecting portion. Attached Figure Description

[0030] The above and other objects and features will become clear from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, similar reference numerals in the drawings refer to similar parts, and wherein:

[0031] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the concept of the present invention;

[0032] Figure 2 This illustrates an embodiment of the present invention. Figure 1 A schematic diagram of the process chamber;

[0033] Figure 3 This illustrates the embodiment of the invention as viewed from above. Figure 2 A schematic diagram of the main road;

[0034] Figure 4 This illustrates the implementation method. Figure 2 A schematic perspective view of the lifting pin sleeve;

[0035] Figure 5 This is according to an embodiment of the present invention. Figure 2 A partially enlarged view of the support unit;

[0036] Figure 6 This illustrates the heat transfer medium in accordance with an embodiment of the present invention. Figure 5 A schematic diagram of the flow state inside the pin hole;

[0037] Figure 7 This shows the effect according to another embodiment when viewed from above. Figure 2 A schematic diagram of the main road;

[0038] Figure 8 This illustrates an embodiment according to another method. Figure 2 A schematic diagram of the process chamber; and

[0039] Figure 9 This illustrates the embodiment of the invention as viewed from above. Figure 7 A schematic diagram of the main road. Detailed Implementation

[0040] Hereinafter, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. Embodiments of the inventive concept can be modified in various ways, and the scope of the inventive concept should not be construed as limited to the embodiments described below. These embodiments are provided to more fully describe the inventive concept to those skilled in the art. Therefore, for emphasis and clarity, the shapes of components, etc., in the drawings are enlarged.

[0041] Various elements may be described using terms such as "first" and "second," but these elements are not limited by these terms. The term may be used only for the purpose of distinguishing one element from another. For example, without departing from the scope of the inventive concept, a first element may be named a second element, and similarly, a second element may be named a first element.

[0042] The following will refer to Figures 1 to 9 The embodiments of the present invention will be described in detail.

[0043] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figure 1 According to an embodiment of the present invention, the substrate processing apparatus 1 may include a loading port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a loading locking chamber 40, and a process chamber 50.

[0044] Loading port 10 may be located on one side of the atmospheric pressure transfer module 20, which will be described below. At least one loading port 10 may be located on one side of the atmospheric pressure transfer module 20. The number of loading ports 10 may be increased or decreased depending on process efficiency and footprint requirements.

[0045] Container 12 can be placed on loading port 10. Container 12 can be loaded onto or unloaded from loading port 10 by an operator or a transfer unit (not shown) (e.g., overhead conveyor (OHT), overhead conveyor, or automated guided vehicle). Container 12 can include various types of containers depending on the type of product to be stored. Closed containers such as front-opening unified pods (FOUP) can be used as container 12.

[0046] The atmospheric pressure transmission module 20 and the vacuum transmission module 30 can be arranged in the first direction 2. Hereinafter, the direction perpendicular to the first direction 2 when viewed from above is defined as the second direction 4. Furthermore, the direction perpendicular to the plane including the first direction 2 and the second direction 4 is defined as the third direction 6. As an example, the third direction 6 can refer to a direction perpendicular to the ground.

[0047] The atmospheric pressure transfer module 20 can transfer the substrate "W" between the container 12 and the loading and locking chamber 40, which will be described below. According to an embodiment, the atmospheric pressure transfer module 20 can extract the substrate "W" from the container 12 to transfer the substrate "W" to the loading and locking chamber 40, or extract the substrate "W" from the loading and locking chamber 40 to transfer the substrate "W" into the container 12.

[0048] The atmospheric pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240. The transfer frame 220 may be disposed between the loading port 10 and the loading locking chamber 40. The loading port 10 may contact the transfer frame 220. The interior of the transfer frame 220 may maintain an atmospheric pressure atmosphere. According to this embodiment, the interior of the transfer frame 220 may be made to have an atmospheric pressure atmosphere.

[0049] A conveyor track 230 is disposed within a conveyor frame 220. The length direction of the conveyor track 230 may be parallel to the length direction of the conveyor frame 220. A first conveyor robot 240 may be disposed on the conveyor track 230.

[0050] The first transfer robot 240 can transfer the substrate "W" between the container 12 placed on the loading port 10 and the loading locking chamber 40, which will be described below. The first transfer robot 240 can move forward and backward along the transfer track 230 in the second direction 4. In addition, the first transfer robot 240 can move in the vertical direction (e.g., the third direction 6).

[0051] The first transfer robot 240 has a first transfer hand 242. A base plate "W" is placed on the first transfer hand 242. The first transfer hand 242 can move forward and backward and / or rotate in a horizontal plane. The first transfer robot 240 may have multiple first transfer hands 242. The multiple first transfer hands 242 can be arranged at intervals from each other in a vertical direction.

[0052] The vacuum transfer module 30 may be disposed between the loading locking chamber 40 and the process chamber 50, which will be described below. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340.

[0053] The interior of the transfer chamber 320 can be maintained in a vacuum environment. A second transfer robot 340 can be disposed within the transfer chamber 320. For example, the second transfer robot 340 can be disposed at the center of the transfer chamber 320. The second transfer robot 340 transfers substrate "W" between the loading locking chamber 40 and the process chamber 50, which will be described below. Furthermore, the second transfer robot 340 can transfer substrate "W" between the process chambers 50.

[0054] The second transfer robot 340 can move in a vertical direction (e.g., third direction 6). The second transfer robot 340 may have a second transfer hand 342, which moves forward and backward and / or rotates in a horizontal plane. The substrate "W" is placed on the second transfer hand 342. The second transfer robot 340 may have multiple second transfer hands 342. The multiple second transfer hands 342 may be arranged at intervals from each other in the vertical direction.

[0055] At least one process chamber 50 may be connected to the transfer chamber 320. According to an embodiment, the transfer chamber 320 may have a polygonal shape. The loading locking chamber 40 and process chamber 50, which will be described below, may be arranged around the periphery of the transfer chamber 320. For example, as... Figure 1 As shown, a hexagonal transfer chamber 320 can be arranged at the center of the vacuum transfer module 30, and a loading locking chamber 40 and a process chamber 50 can be arranged along its periphery. Unlike the above description, the shape of the transfer chamber 320 and the number of process chambers 50 can be varied according to user requirements or process requirements.

[0056] A loading and locking chamber 40 can be arranged between the transfer frame 220 and the transfer chamber 320. The loading and locking chamber 40 has a buffer space for exchanging substrates "W" between the transfer frame 220 and the transfer chamber 320. For example, substrates "W" that have already been processed in the process chamber 50 can be temporarily held in the buffer space of the loading and locking chamber 40. In addition, substrates "W" extracted from the container 12 and scheduled to be processed can be temporarily held in the buffer space of the loading and locking chamber 40.

[0057] As described above, the interior of the transfer frame 220 can maintain an atmospheric pressure atmosphere, and the interior of the transfer chamber 320 can maintain a vacuum pressure atmosphere. Accordingly, the loading and locking chamber 40 can be arranged between the transfer frame 220 and the transfer chamber 320, and the internal atmosphere of the loading and locking chamber 40 can switch between atmospheric pressure and vacuum pressure.

[0058] Process chamber 50 is connected to transfer chamber 320. Multiple process chambers 50 may be provided. Process chamber 50 may be a chamber in which a predetermined process is performed on the substrate "W". According to this embodiment, process chamber 50 may be a chamber in which plasma is used to process the substrate "W".

[0059] For example, process chamber 50 may be a chamber in which plasma is used to perform etching processes to remove thin films on substrate "W", ashing processes to remove photoresist, deposition processes to form thin films on substrate "W", dry cleaning processes, atomic layer deposition (ALD) processes to deposit atomic layers on substrates, or atomic layer etching (ALE) processes to etch atomic layers on substrates. However, the concept of the present invention is not limited thereto, and the plasma processing performed in process chamber 50 may be modified in various ways based on known plasma processing processes.

[0060] Figure 2 This illustrates an embodiment of the present invention. Figure 1 A schematic diagram of the process chamber. (Refer to...) Figure 2 The substrate "W" can be subjected to plasma treatment in the process chamber 50 according to an embodiment of the present invention. The process chamber 50 may include a housing 500, a support unit 600, a gas supply unit 700, and a spray head unit 800.

[0061] The housing 500 may have a sealed interior. The housing 500 has an internal space. This internal space functions as a processing space 501 in which the substrate "W" is processed. While the substrate "W" is being processed, the processing space 501 can be maintained in a substantially vacuum atmosphere. The material of the housing 500 may include metal. According to this embodiment, the material of the housing 500 may include aluminum. Furthermore, the housing 500 may be grounded.

[0062] A transport entrance (not shown) may be formed on one side wall of the housing 500. The transport entrance (not shown) serves as a space through which the substrate "W" is brought into or removed from the processing space 501. The transport entrance (not shown) may be selectively opened or closed by a door assembly (not shown).

[0063] A discharge port 530 may be formed on the bottom surface of the housing 500. The discharge port 530 is connected to a discharge pipe 540. A pressure-reducing component (not shown) may be installed in the discharge pipe 540. The pressure-reducing component (not shown) may be any well-known pump. When the pressure-reducing component (not shown) creates a negative pressure in the discharge pipe 540, the gas supplied to the processing space 501 and process impurities (byproducts) can be discharged from the processing space 501, passing sequentially through the discharge port 530 and the discharge pipe 540. Furthermore, the pressure of the processing space 501 can be adjusted by adjusting the negative pressure state of the processing space 501 by the pressure-reducing component (not shown).

[0064] A discharge baffle 550 may be disposed above the discharge port 530. The discharge baffle 550 may be disposed between the side wall of the housing 500 and the support unit 600, which will be described below. When viewed from above, the discharge baffle 550 may have a substantially annular shape. At least one baffle hole 552 may be formed in the discharge baffle 550. The baffle hole 552 may pass through the upper and lower surfaces of the discharge baffle 550. Gases, process impurities, etc., from the processing space 501 may flow towards the discharge port 530 and the discharge pipe 540 as they pass through the baffle hole 552.

[0065] A support unit 600 is disposed within the housing 500. The support unit 600 can be disposed within the processing space 501. The support unit 600 can be positioned at a predetermined distance from the bottom surface of the housing 500 in the upward direction. The support unit 600 supports the substrate "W". The support unit 600 may include an electrostatic chuck that uses electrostatic force to attract the substrate "W". Alternatively, the support unit 600 can support the substrate "W" using various methods, such as vacuum adsorption or mechanical clamping. An example of a support unit 600 including an electrostatic chuck will be described below.

[0066] The support unit 600 may include an electrostatic chuck, an insulating plate 650, and a lower cover 660.

[0067] An electrostatic chuck supports a substrate "W". The electrostatic chuck may include a support plate 610 and a main body 630. The support plate 610 is located in the upper part of the support unit 600. The support plate 610 may be a disc-shaped dielectric material. The substrate "W" is placed on the upper surface of the support plate 610. According to this embodiment, the radius of the upper surface of the support plate 610 may be smaller than the radius of the substrate "W". When the substrate "W" is placed on the upper surface of the support plate 610, the edge region of the substrate "W" may be located outside the support plate 610.

[0068] The material of the support plate 610 may include a material with strong plasma resistance. According to this embodiment, the material of the support plate 610 may include ceramic.

[0069] An electrode 611 and a heater 612 are disposed inside a support plate 610. According to this embodiment, the electrode 611 may be disposed inside the support plate 610, above the heater 612. The electrode 611 is electrically connected to a first power supply 611a. The first power supply 611a may include a direct current (DC) power supply. A first switch 611b is installed between the electrode 611 and the first power supply 611a. When the first switch 611b is turned on, the electrode 611 can be electrically connected to the first power supply 611a, and a DC current can flow in the electrode 611. An electrostatic force is applied between the electrode 611 and the substrate "W" by the current flowing in the electrode 611. Therefore, the substrate "W" is attracted to the support plate 610.

[0070] Heater 612 is electrically connected to a second power supply 612a. A second switch 612b is installed between heater 612 and the second power supply 612a. When the second switch 612b is turned on, heater 612 can be electrically connected to the second power supply 612a. Heater 612 can generate heat by resisting the current supplied from the second power supply 612a. The heat generated by heater 612 is transferred to substrate "W" through support plate 610. Substrate "W" placed on support plate 610 can be maintained at a predetermined temperature by the heat generated by heater 612. In the above example, it has been described that heater 612 is disposed inside support plate 610, but the concept of the present invention is not limited thereto. For example, heater 612 may not be disposed inside support plate 610.

[0071] The main body 630 is located below the support plate 610. The main body 630 and the support plate 610 can be attached to each other via an adhesive layer 620. According to this embodiment, the upper surface of the main body 630 and the lower surface of the support plate 610 can be attached via the adhesive layer 620. Furthermore, according to this embodiment, the lower surface of the support plate 610 and the upper surface of the lifting pin sleeve 640 (described below) can be attached via the adhesive layer 620. According to this embodiment, the adhesive layer 620 may include a silicone adhesive.

[0072] The main body 630 may have a disc shape. The upper surface of the main body 630 may be stepped, such that the central region is higher than the edge region. The central region of the upper portion of the main body 630 may have a region corresponding to the bottom surface of the support plate 610. The central region of the upper surface of the main body 630 may be attached to the lower surface of the support plate 610 via an adhesive layer 620. Furthermore, an annular member "R", which will be described below, may be provided in the edge region of the upper surface of the main body 630.

[0073] The body 630 may include a conductive material. For example, the material of the body 630 may include aluminum. The body 630 may also be a metal plate.

[0074] The main body 630 can be electrically connected to a third power supply 630a. The third power supply 630a can be a high-frequency power supply that generates high-frequency power. For example, the high-frequency power supply can be a radio frequency (RF) power supply. This RF power supply can be a high-bias-power RF power supply.

[0075] The main body 630 receives high-frequency power from the third power source 630a. Accordingly, the main body 630 can function as an electrode that generates an electric field. According to this embodiment, the main body 630 can serve as the lower electrode of a plasma source, which will be described below. However, the concept of the invention is not limited thereto; the main body 630 can be grounded, thereby functioning as the lower electrode.

[0076] The annular member "R" has an annular shape. According to this embodiment, the annular member "R" can be a focusing ring. The annular member "R" is disposed in the edge region of the electrostatic chuck. The annular member "R" can be disposed above the edge region of the body 630. Furthermore, the annular member "R" is disposed along the periphery of the support plate 610.

[0077] The upper surface of the annular member "R" can be stepped. According to this embodiment, the inner portion of the upper surface of the annular member "R" can be at the same height as the upper surface of the support plate 610. Furthermore, the inner portion of the upper surface of the annular member "R" can support the lower surface of the edge region of the substrate "W" located outside the support plate 610. The outer portion of the upper surface of the annular member "R" can surround the side surface of the edge region of the substrate "W".

[0078] A pin hole may be formed inside the support unit 600. According to an embodiment, the pin hole may be a through-hole that passes vertically through the interior of the support unit 600. For example, the pin hole may be formed from the upper surface of the support plate 610 to the lower surface of the insulating plate 650, which will be described below. The pin hole serves as a lifting channel through which the lifting pin 671 (described below) moves vertically.

[0079] The heat transfer channel 631 can be located inside the support unit 600. According to this embodiment, the heat transfer channel 631 can be disposed inside the electrostatic chuck. The heat transfer channel 631 supplies a heat transfer medium to the lower surface of the substrate "W" supported by the support plate 610. The heat transfer medium can be a liquid supplied to the lower surface of the substrate "W" to address the problem of temperature unevenness caused by plasma treatment of the substrate "W". Furthermore, the heat transfer medium can serve as a medium for transferring heat transferred from the plasma to the substrate "W" to the support plate 610 and the annular member "R" when the substrate "W" is plasma treated.

[0080] The heat transfer medium may include an inert gas. According to this embodiment, the heat transfer medium may include helium (He). However, the invention is not limited thereto, and the heat transfer medium may include various types of gases or liquids.

[0081] The heat transfer channel 631 may include a main channel 632, a first channel 635, and a second channel 636.

[0082] Figure 3 This illustrates an embodiment of the present invention. Figure 2 A schematic diagram of the main channel when viewed from above. Figure 3 The dotted lines shown briefly illustrate the main road 632. The following will refer to... Figure 2 and Figure 3 A heat transfer channel according to an embodiment of the present invention is described in detail.

[0083] The main channel 632 can be a passage through which the heat transfer medium circulates. The main channel 632 can be disposed inside the main body 630. According to one embodiment, when viewed from the front, the main channel 632 can be located at a height corresponding to the upper portion 642 of the lifting pin sleeve 640, which will be described below. According to this embodiment, the main channel 632 can be formed by drilling holes inside the main body 630. However, the invention is not limited thereto; the main channel 632 can be embedded in the main body 630 in the form of a pipe. The main channel 632 can be disposed above the cooling flow channel 637, which will be described below, inside the main body 630.

[0084] The main flow channel 632 may include a center flow channel 633 and an edge flow channel 634. The center flow channel 633 may be disposed in a central region including the center of the body 630. When viewed from above, the center flow channel 633 may have a substantially circular shape. The edge flow channel 634 may be disposed in an edge region of the body 630 surrounding the central region of the body 630. When viewed from above, the edge flow channel 634 may have a substantially circular shape.

[0085] The central flow channel 633 and the edge flow channel 634 are connected to the supply pipe 632b. The supply pipe 632b is connected to the supply source 632a. The heat transfer medium is stored in the supply source 632a. Therefore, the heat transfer medium stored in the supply source 632a can be supplied to the central flow channel 633 and the edge flow channel 634 through the supply pipe 632b. Furthermore, a recovery pipe 632c can be connected to the supply pipe 632b. The recovery pipe 632c can recover the heat transfer medium. A pump 632d can be installed in the recovery pipe 632c. The pump 632d can be a well-known pump that applies negative pressure. A valve 632f can be installed in the area where the supply pipe 632b and the recovery pipe 632c are interconnected. According to this embodiment, the valve 632c can be a three-way valve. By adjusting the opening or closing of the valve 632c, the heat transfer medium can be supplied to the central flow channel 633 and the edge flow channel 634, or the heat transfer medium can be recovered from the central flow channel 633 and the edge flow channel 634.

[0086] The length direction of the first flow channel 635 can be vertical. The first flow channel 635 can be formed inside the support plate 610 and the main body 630. The first flow channel 635 can be formed from the upper surface of the support plate 610 to the upper part of the main body 630. The first flow channel 635 can be configured as a plurality of first flow channels 635. The plurality of first flow channels 635 can be arranged to be spaced apart from each other by a predetermined interval.

[0087] One end of the first flow channel 635 is connected to the main flow channel 632. The first flow channel 635 can be in fluid communication with the main flow channel 632. For example, a portion of the first flow channel 635 can be connected to the central flow channel 633, while another portion of the first flow channel 635 can be connected to the edge flow channel 634. The heat transfer medium circulating inside the central flow channel 633 and the edge flow channel 634 can be supplied through the first flow channel 635 to the lower surface of the substrate "W" supported by the support plate 610.

[0088] The inner surface of the second flow channel 636 can be anodized. The second flow channel 636 can be formed inside the body 630. According to this embodiment, when viewed from the front, the second flow channel 636 can be located at a height corresponding to the upper portion 642 of the lifting pin sleeve 640, which will be described below. One end of the second flow channel 636 can be connected to the main flow channel 632. According to another embodiment, one end of the second flow channel 636 can be connected to the central flow channel 633.

[0089] The other end of the second flow channel 636 can be connected to the lifting pin sleeve 640, which will be described below. For example, the other end of the second flow channel 636 can be connected to the side surface of the lifting pin sleeve 640. The other end of the second flow channel 636 can be connected to the connecting member 662 formed on the side surface of the lifting pin sleeve 640, which will be described below. A portion of the heat transfer medium circulating inside the central flow channel 633 can be supplied through the second flow channel 636 to the hollow structure formed inside the lifting pin sleeve 640. The mechanism of the heat transfer medium flowing through the second flow channel 636 will be described in detail below.

[0090] A cooling channel 637 may be provided inside the main body 630. The cooling channel 637 may be located below the heat transfer channel 631. The cooling channel 637 may be a channel through which cooling fluid circulates. The cooling channel 637 may have a spiral shape. Optionally, the cooling channel 637 may be arranged such that annular channels with different radii share a common center. The cooling channel 637 is connected to the cooling fluid supply source 637a via a cooling fluid supply pipe 637b.

[0091] Cooling fluid is stored in a cooling fluid supply source 637a. For example, the cooling fluid can be cooling water. A cooler (not shown) can be installed in the cooling fluid supply source 637a. This cooler (not shown) can cool the cooling fluid to a predetermined temperature. As described above, the cooler (not shown) can be installed in a cooling fluid supply pipe 637b. A cooling valve 637c is installed in the cooling fluid supply pipe 637b. The cooling valve 637c can be an open or closed valve. Cooling fluid is supplied to the cooling channel 637 through the cooling fluid supply pipe 637b. The cooling fluid flowing through the cooling channel 637 can cool the body 630. The substrate "W" can also be cooled through the body 630.

[0092] Figure 4 This illustrates an embodiment of the present invention. Figure 2 A schematic perspective view of the lifting pin sleeve. Figure 5 This is according to an embodiment of the present invention. Figure 2 A partially enlarged view of the support unit. The following will refer to... Figures 2 to 5 A detailed description of the lifting pin sleeve according to an embodiment of the present invention is provided.

[0093] The lifting pin sleeve 640 can be disposed inside the main body 630. According to this embodiment, the lifting pin sleeve 640 can be inserted into the main body 630. The material of the lifting pin sleeve 640 may include a material with strong plasma resistance. According to an embodiment, the material of the lifting pin sleeve 640 may include ceramic.

[0094] The lifting pin sleeve 640 includes an upper portion 642 and a lower portion 644. The upper portion 642 and the lower portion 644 are integrally formed. The upper portion 642 and the lower portion 644 can be formed as cylinders having a hollow structure. This hollow structure can form part of the pin hole "H" to be described below. That is, the lifting pin 671, to be described below, can be raised and lowered through this hollow structure. Hereinafter, for ease of description, the hollow structure formed in the upper portion 642 and the lower portion 644 is collectively referred to as the pin hole "H".

[0095] According to this embodiment, the upper portion 642 can be formed as a cylinder with a first diameter. Furthermore, the lower portion 644 can be formed as a cylinder with a second diameter larger than the first diameter. When viewed from the front, the lower surface of the lower portion 644 can be located at the same height as the lower surface of the main body 630. Furthermore, when viewed from the front, the upper surface of the upper portion 642 can be located between the lower surface of the support plate 610 and the upper surface of the main body 630. That is, the upper surface of the lifting pin sleeve 640 can protrude upwards from the upper surface of the main body 630. The upper surface of the lifting pin sleeve 640 and the lower surface of the support plate 610 can be attached by an adhesive layer 620.

[0096] A connecting portion 646 is formed on the side surface of the lifting pin sleeve 640. The connecting portion 646 may include a material with strong plasma resistance. According to an embodiment, the material of the connecting portion 646 may include ceramic. According to an embodiment, the connecting portion 646 may be formed on the side surface of the upper portion 642. The connecting portion 646 may be sintered together with the upper portion 642. The connecting portion 646 and the upper portion 642 may be chemically sintered or thermally sintered together. Therefore, the connecting portion 646 and the upper portion 642 are integrally formed.

[0097] Furthermore, the connecting portion 646 may include a porous structure. That is, the connecting portion 646 may have a structure in which fine pores are formed. According to this embodiment, the entire region of the connecting portion 646 may be formed as a porous structure. Optionally, only a portion of the entire region of the connecting portion 646 may be formed as a porous structure. For example, as described below, the connecting portion 646 may be connected to the second flow channel 636, and only the portion of the entire region of the connecting portion 646 connected to the second flow channel 636 may be formed as a porous structure. However, the concept of the present invention is not limited thereto, and various modifications may be made to the porous structure formed in the connecting portion 646, which may cover the entire region connected to the second flow channel 636. As described below, since the arcing phenomenon that may occur due to the plasma introduced through the pin hole "H" can be suppressed by the porous structure formed in the connecting portion 646, it is preferable to form a porous structure over the entire region of the connecting portion 646. Hereinafter, for ease of understanding, an example of the entire region of the connecting portion 646 being formed as a porous structure will be described.

[0098] Connection portion 646 can be connected to second flow channel 636. Connection portion 646 allows fluid communication between second flow channel 636 and pin hole "H". Therefore, heat transfer medium can be supplied from second flow channel 636 to pin hole "H" through connection portion 646.

[0099] When viewed in a longitudinal section, the connecting portion 646 may have a substantially circular shape. The diameter of the connecting portion 646 may be equal to or greater than the diameter of the second flow channel 636. However, the concept of the invention is not limited thereto, and the connecting portion 646 may be varied in shape, but it may be formed to cover the entire area of ​​the second flow channel 636 when viewed in a longitudinal section.

[0100] An O-ring 648 may be provided within the lifting pin sleeve 640. For example, the O-ring 648 may be provided in a hollow structure (pin hole "H") formed inside the lifting pin sleeve 640. The O-ring 648 may have a substantially annular shape. The O-ring 648 may seal the outer surface of the lifting pin 671, which will be described below, and the side surface of the pin hole "H". When viewed from the front, the O-ring 648 may be located below the connecting portion 646.

[0101] Figure 6 This illustrates the heat transfer medium in accordance with an embodiment of the present invention. Figure 5 A schematic diagram illustrating the flow state within the pin hole. The following will refer to... Figure 6 The mechanism of heat transfer medium flow according to the embodiments of the present invention is described in detail.

[0102] When the plasma is in processing space 501 (see...) Figure 2When generated in the center channel 633 and the edge channel 634 (see...), it can be directed to the center channel 633 and the edge channel 634 (see...). Figure 2 The heat transfer medium "F" is supplied. The heat transfer medium "F" is supplied from the central flow channel 633 through the second flow channel 636 and the connecting part 646 to the pin hole "H". That is, the heat transfer medium "F" is supplied to the space between the outer surface of the lifting pin 671 and the side surface of the pin hole "H".

[0103] The downward flow of the heat transfer medium "F" supplied to the pin hole "H" is restricted by the O-ring 648. Therefore, the heat transfer medium "F" flows upward along the pin hole "H" and is supplied to the lower surface of the substrate "W". The heat transfer medium supplied to the lower surface of the substrate "W" can adjust the temperature of the substrate "W" to a predetermined temperature.

[0104] Generally, in processing space 501 (see...) Figure 2 The plasma generated in the substrate "W" may penetrate into the fine separation space between the lower surface of the substrate "W" and the upper surface of the support plate 610. In particular, the plasma may penetrate into the pin hole "H" formed in the support plate 610. Components adjacent to the pin hole "H" are exposed to the plasma penetrating into the pin hole "H". When the components exposed to the plasma include materials with relatively weak plasma resistance, these components may experience arcing due to the penetrating plasma.

[0105] The adhesive layer 620, which has relatively weak plasma resistance, is highly susceptible to arcing due to penetrating plasma. In particular, the adhesive layer 620 between the upper surface of the lifting pin sleeve 640 and the lower surface of the support plate 610 is located very close to the pin hole "H", thus the risk of arcing due to plasma penetrating into the pin hole "H" is relatively high.

[0106] Accordingly, according to an embodiment of the invention, the heat transfer medium "F" is supplied to the pin hole "H," and the heat transfer medium supplied to the pin hole "H" flows upward, thereby adjusting the temperature of the adhesive layer 620 adjacent to the pin hole "H." Therefore, the arcing effect of the plasma penetrating into the pin hole "H" on the adhesive layer 620 can be minimized.

[0107] When the heat transfer medium is directly supplied to the pin hole "H", one end of the flow channel (e.g., the second flow channel 636) connected to the pin hole "H" may arc due to plasma penetrating into the pin hole "H". Therefore, according to an embodiment of the present invention, a lifting pin sleeve 640 having a hollow structure forming part of the pin hole "H" can be disposed within the body 630. Since the lifting pin sleeve 640 according to the embodiment of the present invention is made of a material with strong plasma resistance, the possibility of the lifting pin sleeve 640 arcing due to plasma penetrating into the pin hole "H" is relatively low.

[0108] Furthermore, according to an embodiment of the invention, the connecting portion 646 can be formed on the side surface of the lifting pin sleeve 640 to supply a heat transfer medium to the pin hole "H". Since the connecting portion 646 according to the embodiment of the invention comprises a material with strong plasma resistance, the possibility of the connecting portion 646 causing an electric arc due to plasma penetrating into the pin hole "H" is very low.

[0109] Generally, the likelihood of electric arcing increases when a connecting portion or step is present in a structure located in a plasma-permeable region. According to an embodiment of the present invention, the connecting portion 646 can be sintered together with the lifting pin sleeve 640 and integrally formed with it. Therefore, there is no joint between the lifting pin sleeve 640 and the connecting portion 646. That is, according to an embodiment of the present invention, the connecting portion 646 is integrally formed with the lifting pin sleeve 640, thus minimizing the risk of arcing caused by plasma permeating into the pin hole "H" in the connecting portion 646.

[0110] Generally, the arcing phenomenon caused by plasma intensifies with the increase of the exposed area of ​​the component to the plasma. For example, when plasma is introduced into a component with a relatively large diameter, the component with the large diameter is more prone to arcing by the plasma than the component with the small diameter. Therefore, according to an embodiment of the present invention, since the connecting portion 646 includes a porous structure forming fine pores, even when plasma permeates into the connecting portion 646 through the pin hole "H", the arcing caused by the permeated plasma in the connecting portion 646 can be minimized.

[0111] Furthermore, according to an embodiment of the present invention, the inner surface of the second flow channel 636 can be anodized. Since the inner surface of the second flow channel 636 is anodized, even when a portion of the plasma that has penetrated into the pin hole "H" passes through the connecting portion 646 and permeates into the second flow channel 636, the discharge phenomenon caused by the plasma can be suppressed.

[0112] Therefore, since the second flow channel 636 supplying the heat transfer medium is in flow communication with the pin hole "H" through the connecting portion 646, the risk of arcing caused by plasma penetrating into the pin hole "H" in the second flow channel 636 can be minimized.

[0113] Furthermore, according to an embodiment of the present invention, the main flow channel 632 and the second flow channel 636 can be arranged at a height corresponding to the upper portion 642 of the lifting pin sleeve 640. The diameter of the upper portion 642 of the lifting pin sleeve 640 is smaller than the diameter of the lower portion 644. Therefore, since the space within the main body 630 where the main flow channel 632 and the second flow channel 636 are arranged can be effectively fixed, the problem of structural complexity can be solved.

[0114] Back Figure 2 An insulating plate 650 is located below the main body 630. The insulating plate 650 may include insulating material. The insulating plate 650 provides electrical insulation to the main body 630 and the lower cover 660, which will be described below. When viewed from above, the insulating plate 650 may have a substantially circular shape. The insulating plate 650 may have an area corresponding to that of the main body 630.

[0115] The lower cover 660 is disposed below the insulating plate 650. When viewed from above, the lower cover 660 may have a cylindrical shape with an open upper surface. The upper surface of the lower cover 660 may be covered by the insulating plate 650. The lifting pin assembly 670, which will be described below, may be disposed within the interior space of the lower cover 660.

[0116] The lower cover 660 may include a plurality of connecting members 662. The connecting members 662 can connect the outer surface of the lower cover 660 and the inner wall of the outer casing 500 to each other. The plurality of connecting members 662 may be arranged at intervals from each other in the circumferential direction of the lower cover 660. The connecting members 662 support the support unit 600 inside the outer casing 500. Further, the connecting members 662 may be connected to the grounded outer casing 500 to ground the lower cover 660.

[0117] The lifting pin assembly 670 lifts the base plate "W". The lifting pin assembly 670 lifts the base plate "W" supported by the support plate 610. The lifting pin assembly 670 may include a lifting pin 671 and a lifting plate 672.

[0118] The lifting pin 671 can move up and down along the pin hole "H" formed inside the support unit 600. The diameter of the lifting pin 671 can be relatively smaller than the diameter of the pin hole "H". Furthermore, the upper end of the lifting pin 671 can be circular. Multiple lifting pins 671 can be provided. For example, three lifting pins 671 can be provided. The lifting plate 672 can be provided in the internal space of the lower cover 660. The lifting plate 672 can be moved vertically by a drive member (not shown). Accordingly, the lifting plate 672 can cause the lifting pin 671 to move up and down.

[0119] The gas supply unit 700 supplies gas to the processing space 501. The gas supply unit 700 may include a gas supply nozzle 710, a gas supply pipe 720, and a gas supply source 730.

[0120] A gas supply nozzle 710 can be mounted in the central region of the upper surface of the housing 500. An injection port (not shown) is formed on the bottom surface of the gas supply nozzle 710. The injection port (not shown) allows gas to be injected into the housing 500.

[0121] One end of the gas supply conduit 720 is connected to the gas supply nozzle 710. The other end of the gas supply conduit 720 is connected to the gas supply source 730. The gas supply source 730 can store gas. This gas can be a gas excited into a plasma state by a plasma source, which will be described below. According to this embodiment, the gas may include NH3, NF3, and / or an inert gas. A gas valve 740 is installed in the gas supply conduit 720. The gas valve 740 can be an open or closed valve.

[0122] A plasma source excites the gas supplied to the housing 500 into a plasma state. According to an embodiment of the present invention, capacitively coupled plasma (CCP) can be used as the plasma source. However, the present invention is not limited to this; the gas supplied to the processing space 501 can be excited into a plasma state using inductively coupled plasma (ICP) or microwave plasma. Below, examples of using a CCP as a plasma source according to an embodiment of the present invention will be described.

[0123] The plasma source may include an upper electrode and a lower electrode. The upper and lower electrodes may be arranged facing each other inside the housing 500. High-frequency power may be applied to one of the two electrodes, and the other electrode may be grounded. Alternatively, a high-frequency power supply may be applied to both electrodes. An electric field may be formed in the space between the two electrodes, and gas supplied to this space may be excited into a plasma state. The substrate processing is performed using plasma. According to this embodiment, the upper electrode may be an electrode plate 830, as described below, while the lower electrode may be a body 630.

[0124] The spray head unit 800 is located inside the housing 500. Further, the spray head unit 800 is located above the support unit 600. The spray head unit 800 may include a spray plate 810, an electrode plate 830, and a support member 850.

[0125] The spray plate 810 is located above the support unit 600 and faces the support unit 600. The spray plate 810 may be spaced apart from the ceiling surface of the housing 500 in a downward direction. According to this embodiment, the spray plate 810 may have a disc shape with a constant thickness. The spray plate 810 may be an insulator. A plurality of through holes 812 are formed in the spray plate 810.

[0126] The through hole 812 can pass through the upper and lower surfaces of the spray plate 810. The through hole 812 is positioned to face the hole 832 formed in the electrode plate 830, which will be described below.

[0127] The electrode plate 830 is located above the spray plate 810. The electrode plate 830 can be spaced a predetermined distance from the ceiling surface of the housing 500 in the downward direction. Therefore, a space can be formed between the electrode plate 830 and the ceiling surface of the housing 500. The electrode plate 830 can have a disc shape with a constant thickness.

[0128] The electrode plate 830 may be made of metal. The electrode plate 830 may be grounded. However, as described above, the electrode plate 830 may be electrically connected to a high-frequency power supply (not shown). The bottom surface of the electrode plate 830 may be anodized to reduce plasma-induced arcing. The cross-section of the electrode plate 830 may have the same shape and cross-section as the support unit 600.

[0129] A plurality of holes 832 are formed in the electrode plate 830. The holes 832 pass through the upper and lower surfaces of the electrode plate 830. The plurality of holes 832 correspond to a plurality of through holes 812 arranged in the spray plate 810. Therefore, the gas injected from the gas supply nozzle 710 flows into the space formed by the combination of the electrode plate 830 and the housing 500. The gas can be supplied from this space to the processing space 501 via the holes 832 and the through holes 812.

[0130] The support member 850 supports the side portions of the spray plate 810 and the electrode plate 830. The upper end of the support member 850 is connected to the ceiling surface of the housing 500, and the lower portion of the support member 850 is connected to the side portions of the spray plate 810 and the electrode plate 830. The material of the support member 850 may include non-metallic materials.

[0131] In embodiments of the present invention, an example has been described where the connecting portion 646 is formed in the upper portion 642 of the lifting pin sleeve 640; however, the present invention is not limited thereto. The connecting portion 646 may be formed on the side surface of the lower portion 644. Furthermore, the connecting portion 646 may be sintered simultaneously with the lower portion 644.

[0132] The following describes a heat transfer channel according to another embodiment. Since the heat transfer channel according to the embodiment described below has the same characteristics as the referenced... Figures 2 to 6 The configurations of the heat transfer channels described are substantially the same or similar, and descriptions of duplicate configurations will be omitted except for additional descriptions.

[0133] Figure 7 This shows the effect according to another embodiment when viewed from above. Figure 2 A schematic diagram of the main road.

[0134] Reference Figure 7The central flow channel 633 may include multiple flow channels. For example, the central flow channel 633 may include a first central flow channel 633a, a second central flow channel 633b, and a third central flow channel 633c. The first central flow channel 633a, the second central flow channel 633b, and the third central flow channel 633c may have a substantially circular shape when viewed from above. The first central flow channel 633a, the second central flow channel 633b, and the third central flow channel 633c may share the center of the body 630 and have different diameters.

[0135] For example, a first central flow channel 633a may be positioned adjacent to the center of the body 630, and a second central flow channel 633b may be positioned around the first central flow channel 633a. Furthermore, a third central flow channel 633c may be positioned around the second central flow channel 633b. According to this embodiment, a second flow channel 636 may be connected to the third central flow channel 633c among the first central flow channel 633a, the second central flow channel 633b, and the third central flow channel 633c. Accordingly, the pin hole "H" and the third central flow channel 633c may be in fluid communication with each other.

[0136] The edge channel 634 may include multiple channels. For example, the edge channel 634 may include a first edge channel 634a and a second edge channel 634b. The first edge channel 634a and the second edge channel 634b may have a substantially circular shape when viewed from above. The first edge channel 634a and the second edge channel 634b may share the center of the body 630 and have different diameters. The second edge channel 634b may be positioned around the first edge channel 634a.

[0137] Unlike the description above, the first central flow channel 633a, the second central flow channel 633b, and the third central flow channel 633c can be connected to each other to achieve fluid communication. Furthermore, the central flow channel 633 can include two, four, or more flow channels. Further, the first edge flow channel 634a and the second edge flow channel 634b can be connected to each other to achieve fluid communication. Further, the edge flow channel 634 can include three or more flow channels.

[0138] Figure 8 This illustrates an embodiment according to another method. Figure 2 A schematic diagram of the process chamber. Figure 9 This illustrates the embodiment of the invention as viewed from above. Figure 7 A schematic diagram of the main road. (Refer to...) Figure 8 and Figure 9 The second flow channel 636 can be connected to the edge flow channel 634. That is, the second flow channel 636 can make the edge flow channel 634 and the pin hole "H" fluidly connected to each other. Accordingly, the heat transfer medium can be supplied from the edge flow channel 634 to the pin hole "H".

[0139] Although not shown, a portion of the second flow channel 636 can be connected to the central flow channel 633, and another portion can be connected to the edge flow channel 634. Therefore, the second flow channel 636 can provide flow communication between the central flow channel 633 and the pin hole "H," or between the edge flow channel 634 and the pin hole "H." Furthermore, refer to... Figures 2 to 9 The described center channel 633 and edge channel 634 can be formed as a spiral when viewed from above.

[0140] According to the embodiments of the present invention, the occurrence of electric arcing caused by plasma can be minimized.

[0141] Furthermore, according to the embodiments of the present invention, the occurrence of arcing caused by plasma near the pin hole can be minimized.

[0142] Furthermore, according to an embodiment of the present invention, a heat transfer medium is supplied to the lower surface of the substrate through the pin hole to adjust the temperature of the substrate, and at the same time, the temperature inside the pin hole is adjusted.

[0143] Furthermore, according to embodiments conceived in this invention, the structural complexity of the substrate processing equipment can be minimized.

[0144] The effects of this invention are not limited to those described above. Those skilled in the art will clearly understand the effects not mentioned from the specification and drawings.

[0145] The detailed description above illustrates the inventive concept. Furthermore, while the foregoing describes exemplary embodiments of the inventive concept, it can be used in various other combinations, modifications, and environments. That is, the inventive concept can be modified or altered without departing from the scope of the inventive concept disclosed herein, equivalent to the scope of this disclosure, and / or the technical or knowledge scope of those skilled in the art. The described embodiments depict the optimal state for realizing the technical spirit of the inventive concept, and various variations may be made as needed in specific fields of application and uses of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit it to the disclosed embodiments. Furthermore, it should be understood that the appended claims also include other embodiments.

Claims

1. A substrate processing apparatus for processing substrates, the apparatus comprising: A housing having a processing space in which the substrate is processed; A support unit configured to support the substrate in the processing space; and A gas supply unit configured to supply gas to the processing space. The support unit contains heat transfer channels, pin holes, and connecting portions. The heat transfer channels are configured to supply heat transfer medium to the substrate supported by the support unit. The pin holes define a lifting path for a lifting pin configured to raise and lower the substrate supported by the support unit. The connecting portions connect the heat transfer channels and the pin holes. The connecting portion includes a porous structure. The support unit includes: Support plate, the support plate being configured to support the substrate; and The main body is located below the support plate, and high-frequency power is applied within the main body to generate plasma in the processing space. A lifting pin sleeve with a hollow structure, forming part of the pin hole, is provided inside the main body. The connecting portion is formed on the side surface of the lifting pin sleeve. The heat transfer channel includes: A main channel is formed inside the main body, and the heat transfer medium circulates through the main channel; A first flow channel, connected to the main flow channel, is formed vertically within the body and the support plate and configured to supply the heat transfer medium to the lower surface of the substrate; and A second flow channel is formed inside the main body and connects the main flow channel and the connecting portion. The connecting portion is integrally formed with the side surface of the lifting pin sleeve.

2. The substrate processing apparatus according to claim 1, wherein an O-ring configured to seal the outer surface of the lifting pin and the side surface of the hollow structure is provided in the hollow structure, and When viewed from the front, the O-ring is located below the connecting portion.

3. The substrate processing apparatus according to claim 1, wherein the diameter of the second flow channel is equal to or smaller than the diameter of the connecting portion.

4. The substrate processing apparatus according to claim 1, wherein the lower surface of the support plate and the upper surface of the body are attached to each other by an adhesive layer.

5. The substrate processing apparatus of claim 4, wherein the lifting pin and the connecting portion each comprise a material with relatively higher plasma resistance compared to the adhesive layer and the second flow channel.

6. The substrate processing apparatus according to claim 5, wherein the lifting pin sleeve and the connecting portion are each made of ceramic.

7. The substrate processing apparatus according to claim 1, wherein the surface of the second flow channel is anodized.

8. The substrate processing apparatus according to claim 1, wherein, The main channels include: A central flow channel, formed in a central region including the center of the body; and Edge channels are formed in the edge region surrounding the central region, and The second flow channel connects the central flow channel and / or the edge flow channel to the connecting portion.

9. The substrate processing apparatus according to claim 1, wherein a plurality of pin holes are formed inside the support unit; Multiple second flow channels are formed inside the main body, and The plurality of pin holes are respectively in fluid communication with the plurality of second flow channels.

10. A substrate processing apparatus for processing a substrate, the apparatus comprising: A housing having a processing space in which the substrate is processed; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply gas to the processing space; and A plasma source configured to generate plasma by exciting the gas. The support unit includes: A heat transfer channel is formed inside the support unit and configured to supply a heat transfer medium to the substrate supported by the support unit. A lifting pin sleeve, wherein the lifting pin sleeve is disposed inside the support unit and forms a hollow structure; and A lifting pin, which moves up and down through the hollow structure and is configured to lift the base plate supported by the support unit; It includes a porous connecting portion formed on the side surface of the lifting pin sleeve, and The heat transfer channel is connected to the connecting portion. The support unit further includes: Support plate, the support plate being configured to support the substrate; and The main body is located below the support plate, and high-frequency power is applied within the main body to generate plasma in the processing space. The heat transfer channel is formed inside the main body; The lifting pin sleeve is disposed inside the main body; The heat transfer channel includes: A main channel is formed inside the main body, and the heat transfer medium circulates through the main channel; A first flow channel, connected to the main flow channel, is formed vertically within the body and the support plate and configured to supply the heat transfer medium to the lower surface of the substrate; and A second flow channel is formed inside the main body and connects the main flow channel and the connecting portion. The connecting part and the lifting pin sleeve are sintered and integrally formed.

11. The substrate processing apparatus according to claim 10, wherein, The upper portion of the lifting pin sleeve has a first diameter, and the lower portion of the lifting pin sleeve has a second diameter larger than the first diameter. The connecting portion is formed above the lifting pin sleeve.

12. The substrate processing apparatus according to claim 10 or 11, The upper surface of the lifting pin sleeve is located between the upper surface of the main body and the lower surface of the support plate, and The lower surface of the support plate and the upper surface of the main body, as well as the lower surface of the support plate and the upper surface of the lifting pin sleeve, are attached to each other by an adhesive layer.

13. The substrate processing apparatus of claim 12, wherein the lifting pin and the connecting portion each comprise a material with relatively stronger plasma resistance compared to the adhesive layer.

14. The substrate processing apparatus of claim 10, wherein an O-ring is provided in the hollow structure, the O-ring being configured to seal the outer surface of the lifting pin and the side surface of the hollow structure.

15. The substrate processing apparatus of claim 14, wherein, when viewed from the front, the O-ring is located below the connection portion.

16. A substrate processing apparatus for processing a substrate, the apparatus comprising: A housing having a processing space in which the substrate is processed; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply gas to the processing space; and A plasma source configured to generate plasma by exciting the gas. The support unit includes: A support plate, the support plate being configured to support the substrate; The main body is located below the support plate, and high-frequency power is applied within the main body to generate plasma in the processing space. A heat transfer channel is formed inside the body and configured to supply a heat transfer medium to the substrate supported by the support unit. A lifting pin sleeve, wherein the lifting pin sleeve is disposed inside the main body and forms a hollow structure; and A lifting pin, which moves up and down through the hollow structure and is configured to lift the base plate supported by the support unit from the support plate; The heat transfer channel includes: A main channel is formed inside the main body, and the heat transfer medium circulates through the main channel; A first flow channel, connected to the main flow channel, is formed vertically within the body and the support plate and configured to supply the heat transfer medium to the lower surface of the substrate; and A second flow channel is formed inside the main body and configured to allow the main flow channel to be in fluid communication with the hollow structure. The connecting portion with a porous structure is integrally formed on the side surface of the lifting pin sleeve, and One end of the second flow channel is connected to the connecting portion.

Images