Film forming apparatus

Abstract

The present application provides a film forming apparatus capable of simply constituting heating suppression of electronic parts. The present application includes: a chamber (20) for introducing a sputtering gas (G1); a film forming processing section (40) provided in the chamber (20), having a sputtering source (4) for performing film formation by accumulation of a film forming material through sputtering, and performing film formation on an electronic part (100) in the chamber (20) by the sputtering source (4); a carrying plate (140) for carrying the electronic part (100) for which film formation is performed in the chamber (20); a carrying device (30) for carrying the carrying plate (140) via a tray (34); the tray (34) carried by the carrying device (30); and a support section (35) provided in the tray (34) for supporting the carrying plate (140) in a manner that a gap is generated between the carrying plate (140) and the tray (34).

Description

[0001] This application is a divisional application of the original application, application number 202010217349.6, filed on March 25, 2020, entitled "Film Forming Apparatus". Technical Field

[0002] This invention relates to a film-forming device. Background Technology

[0003] Wireless communication devices, such as mobile phones, contain many electronic components, including semiconductor devices. To prevent interference with communication characteristics, semiconductor devices aim to suppress electromagnetic wave leakage and other electromagnetic wave effects. Therefore, semiconductor devices with electromagnetic wave shielding capabilities have long been used.

[0004] Generally, a semiconductor substrate is formed by mounting a semiconductor chip on an interposer substrate, which serves as a substrate for transferring to a mounting substrate, and then sealing the semiconductor chip with resin. A semiconductor device that provides shielding functionality by providing a conductive electromagnetic wave shielding film on the upper and side surfaces of the sealing resin has been developed (see Patent Document 1).

[0005] This type of electromagnetic wave shielding film can be made into a laminated film of various metal materials. For example, there is a known electromagnetic wave shielding film with a laminated structure in which a Cu film is formed on a base of a stainless steel (SUS) film, and then an SUS film is formed on top of that base.

[0006] Regarding electromagnetic wave shielding films, to achieve sufficient shielding effectiveness, it is necessary to reduce resistivity. Therefore, a certain thickness is required for electromagnetic wave shielding films. For semiconductor devices, generally speaking, a film thickness of approximately 1 μm to 10 μm yields good shielding characteristics. For electromagnetic wave shielding films with the aforementioned SUS, Cu, and SUS stacked structures, it is known that a film thickness of approximately 1 μm to 5 μm provides good shielding performance.

[0007] [Existing technical documents]

[0008] [Patent Literature]

[0009] [Patent Document 1] International Publication No. 2013 / 035819 Summary of the Invention

[0010] [The problem the invention aims to solve]

[0011] As a method for forming electromagnetic wave shielding films, plating is known. However, plating requires wet steps such as pretreatment, plating treatment, and post-treatment steps such as washing, which inevitably increases the manufacturing cost of electronic components.

[0012] Therefore, sputtering as a dry process has attracted attention. As a film-forming apparatus utilizing sputtering, a plasma treatment apparatus for film formation using plasma has been proposed. The plasma treatment apparatus introduces an inert gas into a vacuum container containing a target material and applies a voltage. The ions of the plasma-infused inert gas collide with the target material, causing the material ejected from the target to deposit on the workpiece, thus forming a film.

[0013] Conventional plasma processing equipment is used to form films with thicknesses ranging from 10 nm to several hundred nm, which can be formed in processing times of tens of seconds to minutes. However, as mentioned above, for electromagnetic wave shielding films, films with thicknesses in the micrometer range are required. Since sputtering is a technique that forms a film by depositing particles of the film-forming material onto the object to be film-formed, the thicker the film, the longer the formation time required.

[0014] Therefore, forming an electromagnetic wave shielding film requires a processing time that is several tens of minutes to about an hour longer than that of a typical sputtering method. For example, for an electromagnetic wave shielding film with a stacked structure of SUS, Cu, and SUS, it sometimes takes more than an hour of processing time to obtain a film thickness of 5 μm.

[0015] Thus, in plasma sputtering, the electronic components are continuously exposed to the heat of the plasma during the processing time. As a result, the electronic components are sometimes heated to around 200°C until a film with a thickness of 5 μm is obtained.

[0016] On the other hand, regarding the heat resistance temperature of electronic components, if it is a temporary heating of a few seconds to tens of seconds, it is around 200°C, but if the heating exceeds several minutes, it is generally around 150°C. Therefore, it is difficult to use the general plasma sputtering method to form a micron-sized electromagnetic wave shielding film.

[0017] The purpose of this invention is to provide a film-forming apparatus that can suppress the temperature rise of electronic components during film formation.

[0018] [Technical means to solve the problem]

[0019] To achieve the aforementioned objective, the film-forming apparatus of the present invention includes: a chamber for introducing sputtering gas; a film-forming processing unit disposed within the chamber, having a sputtering source for forming a film by sputtering a film-forming material deposited thereon, and forming a film on an electronic component within the chamber by means of the sputtering source; a transport plate for mounting the electronic component in which film is formed within the chamber; a transport device for transporting the transport plate via a tray; and a support portion disposed on the tray for supporting the transport plate in such a way that a gap is created between the support portion and the tray.

[0020] [The effects of the invention]

[0021] According to the present invention, a film-forming apparatus is provided that can suppress the temperature rise of electronic components during film formation. Attached Figure Description

[0022] Figure 1 (A) Figure 1 (B) is a schematic cross-sectional view of the electronic component in the embodiment.

[0023] Figure 2 (A) ~ Figure 2 (C) is a perspective view showing the electronic components, retaining plates, frame, and transfer plate of the embodiment.

[0024] Figure 3 This is a schematic plan view of the film-forming apparatus according to the embodiment.

[0025] Figure 4 This is an explanatory diagram illustrating the film-forming process of the embodiment.

[0026] Figure 5 (A) Figure 5 (B) is a diagram showing the support surface of the conveyor plate.

[0027] Figure 6 (A) Figure 6 (B) is a three-dimensional view showing the loading of the pallet onto the transport plate.

[0028] Figure 7 (A) Figure 7 (B) is a cross-sectional view showing the loading of the pallet onto the transport plate.

[0029] Figure 8 It is a perspective three-dimensional view of the transport department.

[0030] Figure 9 This is a perspective plan showing the transport section.

[0031] Figure 10 yes Figure 9 AA schematic longitudinal section view.

[0032] Figure 11 (A) ~ Figure 11 (E) is an explanatory diagram showing the cooling section.

[0033] Figure 12 This is a block diagram showing the control device used in the implementation method.

[0034] Figure 13 It is a chart representing the results of a comparative experiment.

[0035] Figure 14 (A) ~ Figure 14 (C) is a cross-sectional view representing the support section in another way.

[0036] Figure 15 This is a perspective plan view representing another way of depicting the film-forming part.

[0037] Figure 16 (A) ~ Figure 16 (E) is an explanatory diagram showing another way of representing the cooling section.

[0038] Figure 17 (A) ~ Figure 17 (E) is an explanatory diagram showing another way of representing the cooling section.

[0039] [Explanation of Symbols]

[0040] 4: Sputtering source

[0041] 5: Processing Unit

[0042] 6: Power Supply Section

[0043] 20: Chamber

[0044] 20a: Top plate

[0045] 20b: Inner bottom surface

[0046] 20c: Inner circumferential surface

[0047] 21: Vacuum Chamber

[0048] 21a: Opening

[0049] 22: Exhaust port

[0050] 23: Exhaust section

[0051] 24: Inlet

[0052] 25: Gas Supply Department

[0053] 30: Transport device

[0054] 31: Rotary table

[0055] 32: Motor

[0056] 33: Maintaining section

[0057] 34: Tray

[0058] 34a: Opposing surfaces

[0059] 34b: Peripheral part

[0060] 35: Support section

[0061] 35a: Protruding component

[0062] 35b: Elastic member

[0063] 40, 40A, 40B, 40C: Film Forming Treatment Section

[0064] 41, 41A, 41B: Target materials

[0065] 42: Back panel

[0066] 43: Electrode

[0067] 44: Division Section

[0068] 44a, 44b: Wall panels

[0069] 50: Surface Treatment Department

[0070] 51: Cylindrical electrode

[0071] 51a: Opening

[0072] 51b: Flange

[0073] 52: Insulating components

[0074] 53: Outer shell

[0075] 54: Shielding

[0076] 55: Process Gas Introduction Section

[0077] 56: RF power supply

[0078] 57: Matching Box

[0079] 60: Load Locking Section

[0080] 610, 620: Rotary arm

[0081] 630: Robotic Arm

[0082] 71: Mechanism Control Department

[0083] 72: Storage Department

[0084] 73: Setting Department

[0085] 74: Input / Output Control Unit

[0086] 75: Input device

[0087] 76: Output device

[0088] 100: Electronic Components

[0089] 111a: Electrode exposed surface

[0090] 111b: Top surface

[0091] 111c: Side view

[0092] 112: Electrode

[0093] 113: Electromagnetic wave shielding film

[0094] 120: Keeping tablets

[0095] 121: Part mounting surface

[0096] 121a: Outer frame area

[0097] 121b: Mid-frame area

[0098] 121c: Attachment area

[0099] 122: Support surface

[0100] 130: Framework

[0101] 131: Through hole

[0102] 140: Transport board

[0103] 141: Mounting surface

[0104] 142: Support surface

[0105] 143: Restriction Section

[0106] 143s: Reference hole

[0107] 200: Panel Assembly Department

[0108] 300: Film-forming part

[0109] 400: Plate detachment section

[0110] 500: Cooling section

[0111] 510: Containment Department

[0112] 511: Opening

[0113] 512: Shutter

[0114] 513: Support platform

[0115] 513a: Temperature Detection Department

[0116] 514: Exhaust port

[0117] 515: Spray nozzle

[0118] 516: Cooling plate

[0119] 516a: Contact surface

[0120] 517: Cooling Chamber

[0121] 520: Spraying section

[0122] 521: Piping

[0123] 530: Decompression Unit

[0124] 531: Piping

[0125] 540: Ventilation section

[0126] 541: Piping

[0127] 600: Transport Department

[0128] 700: Control device

[0129] d: interval

[0130] E: Exhaust

[0131] G1: Sputtering gas

[0132] G2: Process Gas

[0133] S: Film-forming device

[0134] L: Transport path

[0135] M1, M2: Film-forming sites

[0136] M3: Treatment area. Detailed Implementation

[0137] The embodiments of the present invention (hereinafter referred to as the present embodiments) will be described in detail with reference to the accompanying drawings.

[0138] [Electronic Components]

[0139] like Figure 1 As shown in (A), the electronic component 100 that forms the film in this embodiment is a surface mount component formed by sealing components such as semiconductor chips, diodes, transistors, capacitors, or surface acoustic wave (SAW) filters using an insulating encapsulant such as synthetic resin. The semiconductor chip is an integrated circuit (IC) or a large-scale integrated circuit (LSI) or similar integrated circuit that integrates multiple electronic components. The electronic component has a generally cuboid shape, with one side serving as an electrode exposed surface 111a. The electrode exposed surface 111a is the surface where the electrode 112 is exposed, faces the mounting substrate, and is connected to the mounting substrate.

[0140] The electromagnetic wave shielding film 113 is formed of a material that shields electromagnetic waves. Figure 1In (A), only the electromagnetic wave shielding film 113 is shown in cross-section. The electromagnetic wave shielding film 113 is formed on the outer surface of the electronic component 100, excluding the top surface 111b and the side surface 111c, i.e., the electrode exposed surface 111a. The top surface 111b is the surface opposite to the electrode exposed surface 111a. The side surface 111c is the outer peripheral surface that connects the top surface 111b and the electrode exposed surface 111a and extends at an angle different from that of the top surface 111b and the electrode exposed surface 111a.

[0141] To achieve the shielding effect of electromagnetic wave blocking, the electromagnetic wave shielding film 113 only needs to be formed at least on the top surface 111b. A grounding pin (not shown) is present on the side surface 111c. The formation of the electromagnetic wave shielding film 113 relative to the side surface 111c is also for the grounding of the electromagnetic wave shielding film 113.

[0142] Furthermore, regarding electronic component 100, when an electromagnetic wave shielding film 113 is formed, it is sometimes referred to as electronic component 100 including the electromagnetic wave shielding film 113. Additionally, regarding the top surface 111b and the side surface 111c, regardless of whether the electromagnetic wave shielding film 113 is formed or not, they are also simply referred to as top surface 111b and side surface 111c. That is, the surface of the electromagnetic wave shielding film 113 formed on the top surface 111b of electronic component 100 is also called top surface 111b, and the surface of the electromagnetic wave shielding film 113 formed on the side surface 111c is also called side surface 111c.

[0143] [Keep the tablets]

[0144] Figure 1 (B) is a side view showing the state of the electronic component 100 after the film-forming treatment. Figure 1 In (B), the portion other than electronic component 100 is shown in cross-section. Additionally, Figure 2 (A) ~ Figure 2 (C) is a perspective view of a component used to mount electronic parts 100 for film formation treatment. Figure 1 (B) and Figure 2 As shown in (A), the electronic component 100 is held by a retaining sheet 120 having an adhesive surface on one side. More specifically, the exposed electrode surface 111a of the electronic component 100 is pre-attached to the retaining sheet 120, and the electrode 112 is embedded in the retaining sheet 120.

[0145] The retainer 120 is made of heat-resistant synthetic resins such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). The electrode-exposed surface 111a of the retainer 120 is in close contact with the component mounting surface 121, and the opposite support surface 122 serves as the adhesive surface. Regarding the adhesive surface, an adhesive is applied to the surface of the retainer 120, or it is designed as an adhesive surface to create adhesion. Materials used as adhesives or adhesive surfaces include, for example, silicone-based resins, acrylic resins, and various adhesive materials such as urethane resins and epoxy resins.

[0146] In this embodiment, the retaining piece 120 is rectangular. For example... Figure 2 As shown in (A), the component mounting surface 121 of the retaining piece 120 is divided into an outer frame region 121a extending inward from the end of the retaining piece 120 at a predetermined distance, and a middle frame region 121b inside the outer frame region 121a. The electronic component 100 is attached to the middle frame region 121b. The area in the middle frame region 121b for attaching the electronic component 100 is called the attachment region 121c. In this embodiment, the area enclosed by the dotted line in the figure is the attachment region 121c.

[0147] [frame]

[0148] The frame 130 is closely fitted to the retaining piece 120. That is, as... Figure 2 (A) Figure 2 As shown in (B), a rectangular frame 130 is attached to the outer frame region 121a of the retaining piece 120. The frame 130 is formed of a metal such as aluminum or SUS, ceramic, resin, or other materials with high thermal conductivity. In this embodiment, the frame 130 is plate-shaped and has a rectangular through hole 131 formed in the center. The shape of the frame 130 is consistent with the shape of the retaining piece 120. The inner edge of the through hole 131 coincides with the outer edge of the middle frame region 121b. The middle frame region 121b is exposed through the through hole 131 of the frame 130.

[0149] [Film-forming device]

[0150] The film-forming apparatus S in this embodiment is an apparatus for forming a film on electronic components 100. For example... Figure 3 As shown in the plan view, the film-forming apparatus S includes a plate assembly section 200, a film-forming section 300, a plate release section 400, a cooling section 500, and a conveying section 600. Figure 2 (B) Figure 2 (C) Figure 3 [1] Figure 4As shown in [1], on the retaining plate 120 that is in close contact with the electronic component 100 and the frame 130, the conveying plate 140 is in close contact with the support surface 122 of the retaining plate 120. The close contact of the conveying plate 140 is... Figure 3 This process takes place in the board assembly section 200 shown. It is designated as the board assembly process.

[0151] Furthermore, such as Figure 3 [2] Figure 4 As shown in [2], the transfer plate 140 with the retaining piece 120 in close contact is placed on the tray 34. This is set as the plate placement process. Figure 3 [3] Figure 4 As shown in [3], the tray 34 is moved into the film-forming section 300 to form a film on the electronic component 100. This is designated as the film-forming process. During the film-forming process, the electronic component 100 is heated. The conveyor plate 140 functions as a heat release path to release the heat of the electronic component 100 and suppress excessive heat storage.

[0152] After film formation, remove tray 34 from film-forming section 300, as follows: Figure 3 [4] Figure 4 As shown in [4], the transfer plate 140 is removed from the pallet 34. This is set as the plate removal process. Then, as Figure 3 [5] Figure 4 As shown in [5], the retaining piece 120 is detached at the plate detachment section 400. This is designated as the plate detachment process. Furthermore, as Figure 3 [6] Figure 4 As shown in [6], the conveyor plate 140 is cooled in the cooling section 500. This is set as a plate cooling process. Thereafter, as Figure 3 [1] Figure 4 As shown in [1], the retaining piece 120 is again tightly attached to the plate assembly 200. As described above, the retaining piece 120 is tightly attached to the conveyor plate 140.

[0153] As described above, the conveyor plate 140 is repeatedly used through plate assembly, plate placement, film formation, plate removal, plate detachment, and plate cooling processes.

[0154] (Transportation board)

[0155] The conveyor plate 140 is a plate-shaped body made of metals such as aluminum and SUS that have thermal and electrical conductivity. For example... Figure 2 As shown in (B), on the surface of the conveyor plate 140, the surface on which the holding sheet 120 is mounted is designated as the mounting surface 141, and the surface opposite to the mounting surface 141 is designated as the support surface 142, which serves as the support object in the film forming section 300 (see reference). Figure 5As described above, the support surface 122 of the retaining sheet 120 is adhesively bonded to the mounting surface 141 of the transfer plate 140. This ensures sufficient heat transfer area from the electronic component 100 to the transfer plate 140 by mounting the electronic component 100 on the transfer plate 140. Furthermore, "mounting the electronic component 100 on the transfer plate 140" means that the electronic component 100 is in direct or indirect contact with the transfer plate 140 in a manner that allows heat transfer to the transfer plate 140. This is not limited to the case where the electronic component 100 is placed on the transfer plate 140 by gravity; the orientation of the transfer plate 140 does not matter, as long as the electronic component 100 is in direct or indirect contact. Additionally, to facilitate heat dissipation from the electronic component 100, it is preferable that the transfer plate 140 is in close contact with the support surface 122 of the retaining sheet 120 at least covering the entire area corresponding to the attachment area 121c.

[0156] The surfaces of the conveyor plate 140 other than the mounting surface 141, namely the support surface 142 and the side surfaces, have irregularities or are porous. The irregularities can be formed, for example, by performing a surface roughening treatment. For example, if the conveyor plate 140 is made of aluminum, the porous nature can be formed by performing an alumina film treatment. Additionally, as... Figure 5 As shown in (A), on the support surface 142 of the conveyor plate 140, there are limiting portions 143 in the areas corresponding to the four corners. In this embodiment, the limiting portions 143 are four circular recessed holes of the same depth.

[0157] The heat capacity of the conveyor plate 140 can be set to be greater than that of the electronic component 100, and more preferably to that of the retaining sheet 120, for example, to be 2500 (J / K) to 5000 (J / K). This allows heat released from the electronic component 100 or heat received by the retaining sheet 120 to be moved to the conveyor plate 140 with its larger heat capacity and released. As described above, the retaining sheet 120 is formed of a heat-resistant resin material, but in terms of cost, the heat resistance temperature of commonly used PET sheets is around 100°C to 150°C. When such a sheet is used as the retaining sheet 120, if heat released from the electronic component 100 or heat received by the retaining sheet 120 accumulates in the retaining sheet 120 and exceeds its heat resistance temperature, there is a possibility that the retaining sheet 120 will deform due to heat and the electronic component 100 will peel off. Therefore, if the conveyor plate 140 has a larger heat capacity than the retaining sheet 120, the heat received by the retaining sheet 120 can be effectively released to the conveyor plate 140. This can suppress thermal deformation of the retaining sheet 120 and prevent the electronic component 100 from peeling off from the retaining sheet 120.

[0158] Furthermore, the area of ​​the transfer plate 140 (the area of ​​the mounting surface 141) when viewed from above is formed to be smaller than or equal to the area of ​​the retaining plate 120 (the area of ​​the part mounting surface 121). For example, the area of ​​the transfer plate 140 is set to be the same as the area of ​​the retaining plate 120, or the outer edge of the transfer plate 140 is reduced inward by about 1 mm compared to the outer edge of the retaining plate 120. In the case of reverse sputtering described later, the transfer plate 140 also functions as part of the electrode and is therefore subjected to ion impacts. However, by ensuring that the transfer plate 140 on which the retaining plate 120 is mounted is not exposed, the transfer plate 140 can be prevented from being damaged by sputtering.

[0159] (tray)

[0160] like Figure 4 As shown, tray 34 is a component that carries the transfer plate 140 and moves in / out relative to the film-forming section 300. Figure 6 (A) Figure 7 As shown in (A), the tray 34 has an facing surface 34a, a peripheral portion 34b, and a support portion 35. The facing surface 34a is one plane of a square-shaped flat plate, facing the conveyor plate 140. A peripheral portion 34b is formed around the periphery of the facing surface 34a. The peripheral portion 34b is a rectangular frame surrounding the facing surface 34a. Regarding the material of the tray 34, it is made of a conductive material, such as metal. In this embodiment, the material of the tray 34 is aluminum or SUS, which are metals with thermal conductivity and electrical conductivity.

[0161] like Figure 6 (A) Figure 6 (B) Figure 7 (A) Figure 7 As shown in (B), the support 35 is disposed on the tray 34 and supports the transfer plate 140 in such a way that a gap is created between the transfer plate 140 and the tray 34. The distance d between the support surface 142 of the transfer plate 140 and the opposing surface 34a of the tray 34 is preferably set to a distance at which the film-forming material does not enter the gap between the support surface 142 and the opposing surface 34a during the film-forming process, thereby obtaining a heat insulation effect, for example, about 2 mm to 5 mm, but is not limited to the value stated therein.

[0162] The support portion 35 has protruding members 35a projecting from its opposing surface 34a. In this embodiment, the protruding members 35a are four conical pins. The four pins correspond to the limiting portion 143 of the conveyor plate 140 and are positioned at their front ends where they are inserted into the limiting portion 143. The movement of the conveyor plate 140 supported by the support portion 35 is limited by the protruding members 35a embedding into the limiting portion 143. To suppress heat conduction, the contact area between the support portion 35 and the conveyor plate 140 (…) Figure 5The total area (shown by the blackened circles) is preferably set to 5% or less of the area of ​​the support surface 142 of the conveyor plate 140. However, the preferred ratio may vary depending on various factors such as the material, shape, temperature conditions, and number of contact points of the conveyor plate 140 and the support portion 35. Therefore, the present invention is not limited to these ratios. Furthermore, the support portion 35 is formed of the same material as the tray 34. The support portion 35 and the tray 34 may be formed integrally or by combining separately formed components. However, the support portion 35 and the tray 34 are conductive and electrically connected to each other.

[0163] The support position of the support portion 35, that is, the support position of the conveyor plate 140 using the protruding member 35a, can be set such that "the distance between the outer periphery of the conveyor plate 140 and the limiting portion 143 is greater than the distance between the outer periphery of the conveyor plate 140 and the inner periphery of the peripheral edge portion 34b of the tray 34 when the protruding member 35a is embedded in the limiting portion 143". If this is the case, even if the protruding member 35a shifts from the limiting portion 143 of the conveyor plate 140, the conveyor plate 140 can be limited and held by the inner peripheral surface of the peripheral edge portion 34b.

[0164] Furthermore, the phrase "the conveyor plate 140 is supported by the support portion 35" means that the conveyor plate 140 and the support portion 35 are directly or indirectly connected in a manner that suppresses heat transfer between the conveyor plate 140 and the support portion 35. It is not limited to the case where the conveyor plate 140 is placed on the support portion 35 by gravity; the orientation of the support portion 35 is irrelevant as long as the conveyor plate 140 is directly or indirectly connected. In addition, in this embodiment, the conveyor plate 140 is conductive, ensuring an electrical connection between the conveyor plate 140 and the tray 34 via the support portion 35.

[0165] Furthermore, the conveyor plate 140 undergoes thermal expansion due to the accumulation of heat from the electronic components 100 or from the plasma. Therefore, the position of the restraints 143 provided on the support surface 142 of the conveyor plate 140 shifts. On the other hand, the tray 34, which has the support 35, is thermally insulated from the conveyor plate 140, and even with thermal expansion, it undergoes a different change than the conveyor plate 140. Therefore, there is a possibility that the position of the support 35 and the position of the restraints 143 may shift relative to each other during processing, causing the support 35 to deviate from the restraints 143 and detach, making the holding of the conveyor plate 140 unstable. Therefore, by making the shapes of the multiple restraints 143 different, positional shifts between the conveyor plate 140 and the support 35 caused by thermal expansion can be tolerated, and stable holding can be maintained. For example, as... Figure 5As shown in (B), one of the four limiting parts 143 is designated as a reference hole 143s, and the other three are designated as holes larger than the reference hole 143s. This allows for positional offset from the protruding member 35a of the support part 35 even if the conveyor plate 140 undergoes thermal expansion. Furthermore, in the conveyor plate 140, two holes located on the same side as the reference hole 143s are designated as elongated holes along the side, and a hole located diagonally opposite the reference hole 143s is designated as a circular hole with a diameter at least larger than the reference hole 143s. This allows for the fixation of a corner using the reference hole 143s, thus restricting the direction of movement of the conveyor plate 140 even if thermal expansion occurs.

[0166] [Panel Assembly Section]

[0167] Although not shown, the board assembly section 200 includes a pressing device that presses the retaining piece 120 against the conveyor plate 140 to ensure close contact between the retaining piece 120 and the conveyor plate 140. The board assembly section 200 inserts the retaining piece 120, pre-pressed with electronic components 100 and attached with a frame 130, and the conveyor plate 140. It also includes cases where the conveyor plate 140, after being cooled by the cooling section 500, is inserted for reuse.

[0168] [Film-forming part]

[0169] The film-forming section 300 forms an electromagnetic wave shielding film 113 on the outer surface of each electronic component 100 by sputtering. Regarding the film-forming section 300, as... Figure 9 As shown, if the rotary table 31 rotates, the electronic components 100 on the tray 34 held by the holding part 33 move in a circular trajectory. When passing the position opposite to the sputtering source 4, the particles sputtered from the target material 41 adhere to form a film.

[0170] like Figure 8 and Figure 9 As shown, the film-forming unit 300 includes a chamber 20, a conveying device 30, a film-forming treatment unit 40A, a film-forming treatment unit 40B, a surface treatment unit 50, a load locking unit 60, and a control device 700.

[0171] (cavity)

[0172] Chamber 20 is a container for introducing the reaction gas G. The reaction gas G includes sputtering gas G1 for sputtering and various process gases G2 for processing (see reference). Figure 10 In the following description, without distinguishing between sputtering gas G1 and process gas G2, it is sometimes referred to as reactive gas G. Sputtering gas G1 is a gas used to form a film on the surface of electronic component 100 by sputtering, which utilizes plasma generated by applying electricity to collide the generated ions with the target material 41 (41A, 41B). For example, an inert gas such as argon can be used as sputtering gas G1.

[0173] Process gas G2 is used for surface treatments involving etching or ashing. Hereinafter, this surface treatment is sometimes referred to as reverse sputtering. Process gas G2 can be appropriately changed depending on the purpose of the treatment. For example, in the case of etching, an inert gas such as argon can be used as the etching gas. In this embodiment, argon is used for cleaning and surface roughening of the surface of the electronic component 100. For example, by cleaning the surface and roughening it at the nanoscale, the adhesion of the film can be improved.

[0174] The internal space of chamber 20 forms a vacuum chamber 21. The vacuum chamber 21 is an airtight space that can be evacuated by decompression. For example, as... Figure 8 and Figure 10 As shown, the vacuum chamber 21 is a cylindrical, sealed space formed by the top plate 20a, the inner bottom surface 20b, and the inner peripheral surface 20c inside the chamber 20.

[0175] like Figure 10 As shown, chamber 20 has an exhaust port 22 and an inlet port 24. The exhaust port 22 is an opening for venting gas E to ensure gas flow between the vacuum chamber 21 and the outside. The exhaust port 22 is formed, for example, at the bottom of chamber 20. An exhaust section 23 is connected to the exhaust port 22. The exhaust section 23 has piping and pumps, valves, etc. (not shown). By utilizing the exhaust process of the exhaust section 23, the pressure inside the vacuum chamber 21 is reduced.

[0176] The inlet 24 is an opening used to introduce sputtering gas G1 into the vicinity of the target 41 in the vacuum chamber 21. A gas supply unit 25 is connected to the inlet 24. Each sputtering source 4 is provided with a gas supply unit 25. In addition to piping, the gas supply unit 25 also includes a gas supply source for the reaction gas G (not shown), a pump, valves, etc. The sputtering gas G1 is introduced into the vacuum chamber 21 from the inlet 24 through the gas supply unit 25. Furthermore, as described later, an opening 21a for inserting the processing unit 5 is provided in the upper part of the chamber 20.

[0177] (Transportation Department)

[0178] The conveying device 30 is disposed within the chamber 20 and is a device for cyclically conveying electronic components 100 along a circular trajectory. Circular conveying refers to the movement of the tray 34 carrying the electronic components 100 along a circular trajectory. The trajectory along which the tray 34 moves via the conveying device 30 is called the conveying path L. The conveying device 30 includes a rotary table 31, a motor 32, and a holding part 33. Furthermore, the holding part 33 holds the tray 34, which carries the conveyor plate 140, via a support part 35.

[0179] The rotary table 31 is a circular plate. The motor 32 is a drive source that provides driving force to the rotary table 31 and causes it to rotate about the center of the circle. The holding part 33 is a component that holds the tray 34 conveyed by the conveying device 30. On the top surface of the rotary table 31, a plurality of holding parts 33 are arranged in circumferentially equidistant positions. For example, the area where each holding part 33 holds the tray 34 is formed with an orientation parallel to the tangent of the circle in the circumferential direction of the rotary table 31, and they are arranged at equal intervals in the circumferential direction. More specifically, the holding part 33 is a groove, hole, protrusion, clamp, retainer, etc., that holds the tray 34. It can be constructed by means of a mechanical chuck or an adhesive chuck.

[0180] As described above, the electronic component 100 is positioned on the rotary table 31 by the tray 34 held by the holding part 33. Furthermore, in this embodiment, six holding parts 33 are provided, thus holding six trays 34 at 60° intervals on the rotary table 31. However, there may be one or more holding parts 33.

[0181] (Film Forming Processing Department)

[0182] Film-forming processing unit 40A and film-forming processing unit 40B are processing units for forming films on electronic components 100 transported by conveying device 30. Hereinafter, without distinguishing between the multiple film-forming processing units 40A and 40B, they will be described as film-forming processing unit 40. Figure 10 As shown, the film forming processing unit 40 includes a sputtering source 4, a dividing unit 44, and a power supply unit 6.

[0183] <Splash Source>

[0184] The sputtering source 4 is a source of film-forming material for depositing film-forming material onto the electronic component 100 via sputtering. The sputtering source 4 includes a target 41, a backing plate 42, and electrodes 43. The target 41 is formed from the film-forming material deposited onto the electronic component 100 to form a film, and is positioned opposite to the transport path L. Regarding the target 41 in this embodiment, as... Figure 9 As shown, two targets 41A and 41B are arranged in a direction orthogonal to the conveying direction, i.e., in the radial direction of the rotation of the rotary table 31. Hereinafter, without distinguishing between targets 41A and 41B, we will refer to them as target 41. The bottom surface of target 41 is separated from and faces the electronic component 100 that moves via the conveying device 30. Furthermore, the size of the processing area, which is the execution area where film-forming material can be attached by the two targets 41A and 41B, is larger than the size of the tray 34 in the radial direction of the rotary table 31.

[0185] As described later, the film-forming material may include, for example, Cu, Ni, Fe, SUS, etc. However, if the material is to be formed by sputtering, various materials may be used. Additionally, the target 41 may be, for example, cylindrical. However, it may also be other shapes such as elongated cylindrical or prismatic.

[0186] The backplate 42 is a component that holds the target 41. The electrode 43 is a conductive component that applies electricity to the target 41 from the outside of the chamber 20. In addition, the sputtering source 4 may be equipped with magnets, cooling mechanisms, etc., as needed.

[0187] <Division>

[0188] The dividing section 44 is a component that divides the film-forming area M1, the film-forming area M2, and the surface-treatment area M3 where a film is formed on the electronic component 100 using the sputtering source 4. Hereinafter, without distinguishing between the film-forming areas M1 and M2, it will be described in terms of the film-forming area M. Figure 9 As shown, the dividing section 44 has square wall panels 44a and 44b arranged radially from the center of the circumference of the conveying path L, i.e., the rotation center of the rotary table 31 of the conveying device 30. The wall panels 44a and 44b are provided, for example, at the position where the target material 41 is clamped. The lower end of the dividing section 44 leaves a gap for the electronic component 100 to pass through, and faces the rotary table. The presence of the dividing section 44 suppresses the diffusion of the reactive gas G and the film-forming material into the vacuum chamber 21.

[0189] Film-forming areas M1, M2, and M3 are spaces divided by the dividing section 44. Film-forming areas M1 and M2 include the target material 41 of the sputtering source 4. More specifically, as... Figure 9 As shown, viewed from the planar direction, the film-forming areas M1, M2, and M3 are fan-shaped spaces surrounded by the wall plates 44a and 44b of the dividing section 44 and the inner peripheral surface 20c of the chamber 20. The horizontal range of the film-forming areas M1, M2, and M3 is defined by a pair of wall plates 44a and 44b. Furthermore, the film-forming material is deposited in the form of a film on the electronic component 100 located in the film-forming area M opposite to the target material 41. The film-forming area M is the region where most of the film formation takes place, but even beyond the area of ​​the film-forming area M, there will be leakage of film-forming material from the film-forming area M, so film accumulation is not completely absent. That is, the processing area where film formation takes place is a region slightly wider than the film-forming area M.

[0190] <Power Supply Section>

[0191] The power supply unit 6 is a component that applies electricity to the target 41. By applying electricity to the target 41 using the power supply unit 6, the sputtering gas G1 is plasmaized, allowing the film-forming material to be deposited on the electronic component 100. In this embodiment, the power supply unit 6 is, for example, a direct current (DC) power supply that applies a high voltage. Furthermore, in the case of an apparatus for high-frequency sputtering, it may also be a radio frequency (RF) power supply. The rotating stage 31 and the grounded chamber 20 are at the same potential, and a potential difference is generated by applying a high voltage to the target 41 side. This makes the movable rotating stage 31 negatively potential, thus avoiding difficulties in connecting it to the power supply unit 6.

[0192] Multiple film-forming processing units 40 selectively deposit film-forming materials to form a film containing multiple layers of film-forming materials. In particular, in this embodiment, sputtering sources 4 corresponding to different types of film-forming materials are included, and by selectively depositing film-forming materials, a film containing multiple layers of film-forming materials is formed. The term "including sputtering sources 4 corresponding to different types of film-forming materials" includes cases where all film-forming processing units 40 use different film-forming materials, and also cases where multiple film-forming processing units 40 use a common film-forming material but differ otherwise. The term "selectively depositing film-forming materials one by one" means that while film-forming processing units 40 of any one type of film-forming material are forming a film, film-forming processing units 40 of other film-forming materials are not forming a film. Furthermore, the term "film-forming processing unit 40" or "film-forming section M" refers to a film-forming processing unit 40 or film-forming section M in which an electric current is applied to the target material 41 of the film-forming processing unit 40, and film formation is possible for the electronic component 100.

[0193] In this embodiment, two film-forming processing units 40A and 40B are provided, sandwiched between the surface treatment unit 50, in the conveying direction of the conveying path L. Film-forming portions M1 and M2 correspond to the two film-forming processing units 40A and 40B. In these film-forming processing units 40A and 40B, the film-forming material of film-forming processing unit 40A is SUS. That is, the sputtering source 4 of film-forming processing unit 40A includes a target 41A and a target 41B containing SUS. The film-forming material of the other film-forming processing unit 40B is Cu. That is, the sputtering source 4 of film-forming processing unit 40B includes a target 41A and a target 41B containing Cu. In this embodiment, while one film-forming processing unit 40 is performing film-forming processing, the other film-forming processing units 40 are not performing film-forming processing.

[0194] (Surface Treatment Department)

[0195] The surface treatment unit 50 is a reverse sputtering treatment unit that performs surface treatment on the electronic components 100 transported by the conveying device 30, i.e., plasma treatment without a sputtering source 4. The surface treatment unit 50 is provided in the treatment area M3 divided by the dividing section 44. The surface treatment unit 50 has a processing unit 5. (Refer to...) Figure 9 and Figure 10 An example of the configuration of the processing unit 5 will be described.

[0196] The processing unit 5 includes a cylindrical electrode 51 disposed from the upper part to the interior of the chamber 20. The cylindrical electrode 51 is cylindrical, with an opening 51a at one end and a closed end. The cylindrical electrode 51 is mounted on an opening 21a disposed on the top surface of the chamber 20 with the end having the opening 51a facing the rotary table 31, separated by an insulating member 52. The sidewalls of the cylindrical electrode 51 extend into the interior of the chamber 20.

[0197] A flange 51b protruding outward is provided at the end of the cylindrical electrode 51 opposite to the opening 51a. An insulating member 52 is fixed between the flange 51b and the periphery of the opening 21a of the chamber 20, thereby airtightly maintaining the interior of the chamber 20. The insulating member 52 only needs to be insulating and is not limited to a specific material, such as polytetrafluoroethylene (PTFE).

[0198] The opening 51a of the cylindrical electrode 51 is positioned on the rotary table 31 facing the transport path L. The rotary table 31, acting as a transport device 30, transports the tray 34 carrying the electronic components 100 past the position facing the opening 51a. Furthermore, the size of the opening 51a of the cylindrical electrode 51 is larger than the size of the tray 34 in the radial direction of the rotary table 31.

[0199] like Figure 9 As shown, viewed from a planar direction, the cylindrical electrode 51 forms a fan shape that expands outward from the center side of the rotary table 31 in the radial direction. The term "fan shape" here refers to the shape of the fan-shaped portion of a fan. The opening 51a of the cylindrical electrode 51 is also fan-shaped. Regarding the speed at which the tray 34 on the rotary table 31 passes the position facing the opening 51a, in the radial direction of the rotary table 31, the speed decreases towards the center and increases towards the outer side. Therefore, if the opening 51a is simply rectangular or square, there will be a difference in the time it takes for the electronic component 100 to pass the position facing the opening 51a between the center and the outer side in the radial direction. By expanding the opening 51a outward from the center side in the radial direction, the time taken to pass through the opening 51a can be set to a constant, allowing for equal plasma processing as described later. However, if the difference in time is to the extent that it will not cause problems on the product, it can also be rectangular or square.

[0200] As described above, the cylindrical electrode 51 penetrates the opening 21a of the chamber 20, with a portion protruding to the outside of the chamber 20. Figure 8 As shown, the portion of the cylindrical electrode 51 exposed to the outside of the chamber 20 is covered by the outer casing 53. The space inside the chamber 20 is hermetically maintained by the outer casing 53. The portion of the cylindrical electrode 51 located inside the chamber 20, i.e., the surrounding sidewall, is covered by a shield 54.

[0201] The shield 54 is a fan-shaped corner tube coaxial with the cylindrical electrode 51 and larger than the cylindrical electrode 51. The shield 54 is connected to the chamber 20. Specifically, the shield 54 is erected vertically from the edge of the opening 21a of the chamber 20, and its end extending toward the interior of the chamber 20 is at the same height as the opening 51a of the cylindrical electrode 51. The shield 54, like the chamber 20, functions as a cathode, and therefore can be constructed using a conductive metal component with low resistance. The shield 54 can also be integrally formed with the chamber 20, or it can be mounted to the chamber 20 using a fixing metal part or the like.

[0202] The shield 54 is provided to stably generate plasma within the cylindrical electrode 51. The sidewalls of the shield 54 extend substantially parallel to the sidewalls of the cylindrical electrode 51, separated by a predetermined gap. If the gap becomes too large, the capacitance decreases, or plasma generated within the cylindrical electrode 51 may enter the gap; therefore, ideally, the gap should be as small as possible. However, even if the gap becomes too small, the capacitance between the cylindrical electrode 51 and the shield 54 will increase, which is undesirable. The size of the gap can be appropriately set according to the capacitance required to generate plasma. Furthermore, Figure 10 Only the shield 54 and the two sidewalls extending in the radial direction of the cylindrical electrode 51 are shown in the figure. However, a gap of the same size as the sidewalls in the radial direction can also be provided between the shield 54 and the two sidewalls extending in the circumferential direction of the cylindrical electrode 51.

[0203] Additionally, a process gas inlet 55 is connected to the cylindrical electrode 51. Besides piping, the process gas inlet 55 also includes a gas supply source for process gas G2 (not shown), a pump, valves, etc. Process gas G2 is introduced into the cylindrical electrode 51 through the process gas inlet 55. As described above, the process gas G2 can be appropriately changed according to the purpose of the process.

[0204] An RF power supply 56 for applying a high-frequency voltage is connected to the cylindrical electrode 51. A matching box 57, serving as a matching circuit, is connected in series on the output side of the RF power supply 56. The RF power supply 56 is also connected to the chamber 20. When a voltage is applied by the RF power supply 56, the cylindrical electrode 51 functions as the anode, and the chamber 20, shield 54, rotary table 31, tray 34, and conveyor plate 140 function as the cathode. That is, they function as electrodes for reverse sputtering. Therefore, as described above, the rotary table 31, tray 34, and conveyor plate 140 are conductive and in contact with each other in an electrically connected manner.

[0205] Matching box 57 stabilizes plasma discharge by matching the impedance of the input and output sides. Furthermore, chamber 20 or rotary table 31 is grounded. Shield 54 connected to chamber 20 is also grounded. RF power supply 56 and process gas inlet 55 are both connected to cylindrical electrode 51 via through-holes in housing 53.

[0206] If argon gas, which is used as process gas G2, is introduced into the cylindrical electrode 51 from the process gas inlet 55, and a high-frequency voltage is applied to the cylindrical electrode 51 by the RF power supply 56, the argon gas is plasmaized, thereby generating electrons, ions and free radicals.

[0207] (Load Locking Section)

[0208] The load lock unit 60 is a device that, while maintaining a vacuum in the vacuum chamber 21, moves a tray 34 carrying unprocessed electronic components 100 via a transfer unit (not shown) into the vacuum chamber 21, and moves a tray 34 carrying processed electronic components 100 via the transfer unit 140 out of the vacuum chamber 21. The load lock unit 60 can utilize a well-known structure, therefore its description is omitted.

[0209] [Plate detachment section]

[0210] Regarding the plate release section 400, a transfer plate 140 is inserted into the electronic component 100 and then removed from the tray 34. Although not shown, the plate release section 400 applies force to the retaining piece 120 by inserting a pusher through a hole or slot provided in the transfer plate 140, thereby peeling a portion of the retaining piece 120 from the transfer plate 140 and lifting it by a holding member, thus detaching the retaining piece 120 from the transfer plate 140.

[0211] [Cooling Section]

[0212] The cooling section 500 cools the heated conveyor plate 140 by forming a film on the electronic component 100 using the film-forming section 300. For example... Figure 4 , Figure 11 (A) ~ Figure 11As shown in (E), the cooling unit 500 includes a housing 510, a spray unit 520, a pressure reducing unit 530, and a venting unit 540. The housing 510 is a container for housing the conveyor plate 140. The housing 510 is airtight and can be made into a vacuum inside.

[0213] The receiving section 510 has an opening 511, a shutter 512, a support platform 513, an exhaust port 514, and a spray nozzle 515. The opening 511 is sized for the transfer plate 140 to be inserted and removed. The shutter 512 is provided at the opening 511 and opens and closes the opening 511. When the opening 511 is closed by the shutter 512, the receiving section 510 is sealed from the outside air; when the opening 511 is opened by the shutter 512, the atmosphere inside the receiving section 510 is opened.

[0214] The support platform 513 is a platform that supports the conveyor plate 140 housed in the housing section 510. The support platform 513 supports a portion of the support surface 142 of the conveyor plate 140. That is, the mounting surface 141, a portion of the support surface 142, and the side surface of the conveyor plate 140 supported by the support platform 513 are exposed within the housing section 510. The exhaust port 514 is an opening used to depressurize the housing section 510 by venting air. The spray port 515 is an opening used to spray out liquid. The spray port 515 is also an opening used to break the vacuum within the housing section 510 by introducing atmospheric air.

[0215] The spray section 520 sprays liquid into the containment section 510. Water is used as the liquid. The spray section 520 has a pipe 521 communicating with a water supply source (not shown). Additionally, the spray section 520 has a nozzle (not shown) extending from the pipe 521 to a spray port 515. The pressure-reducing section 530 depressurizes the interior of the containment section 510 to cool the conveyor plate 140 using the heat of vaporization of the liquid sprayed by the spray section 520. The pressure-reducing section 530 includes a pipe 531 connected to an exhaust port 514 and connected to a pneumatic circuit (not shown) connected to the pipe 531. By utilizing the exhaust from the pressure-reducing section 530, the containment section 510 is depressurized to a vacuum.

[0216] Ventilation section 540 opens the containment section 510 to the atmosphere. Ventilation section 540 includes a spray nozzle 515 and a pipe 541 connected to a pipe 521, and has a valve (not shown) connected to the pipe 541. Ventilation section 540 breaks the vacuum by opening the valve while the containment section 510 is in a vacuum state.

[0217] [Transportation Department]

[0218] like Figure 3As shown, the conveying unit 600 transports necessary components between the plate assembly unit 200, the film forming unit 300, the plate release unit 400, and the cooling unit 500. The conveying unit 600 in this embodiment includes a rotating arm 610, a rotating arm 620, and a robotic arm 630. The rotating arm 610 removes and inserts a tray 34 carrying a conveying plate 140 relative to the chamber 20 via a load lock unit 60. The rotating arm 620 removes and inserts the conveying plate 140, equipped with a retaining plate 120, relative to the tray 34. The robotic arm 630 transports the conveying plate 140 between the plate assembly unit 200, the rotating arm 620, the plate release unit 400, and the cooling unit 500.

[0219] [Control Device]

[0220] The control device 700 is a device for controlling the various parts of the film-forming apparatus S. The control device 700 may be configured, for example, by a dedicated electronic circuit or a computer that operates according to a predetermined program. That is, the control content of the control device 700 for the plate assembly section 200, the film-forming section 300, the plate release section 400, the cooling section 500, and the conveying section 600 is programmed and executed by a processing device such as a programmable logic controller (PLC) or a central processing unit (CPU).

[0221] The specific controls include: conveying using the conveying plate 140 of the rotating arm 620; moving the tray 34 of the rotating arm 610 into and out of the film-forming section 300; assembling the conveying plate 140 using the holding plate 120 of the plate assembly section 200; detaching the holding plate 120 of the plate detachment section 400 from the conveying plate 140; moving the conveying plate 140 of the robotic arm 630 into and out of the cooling section 500; opening and closing the shutter 512; spraying liquid using the spray section 520; venting using the decompression section 530; and breaking the vacuum using the ventilation section 540, as well as the timing of these actions.

[0222] In addition, the control device 700 controls the initial exhaust pressure of the film forming apparatus S, the selection of the sputtering source 4, the applied power to the target material 41 and the cylindrical electrode 51, the flow rate, type, introduction time and exhaust time of the sputtering gas G1 and the process gas G2, the film forming time, and the rotation speed of the motor 32.

[0223] Refer to the hypothetical functional block diagram, i.e. Figure 12 The configuration of the control device 700 used to perform the actions of each part in the manner described above will be explained. That is, the control device 700 includes a mechanism control unit 71, a storage unit 72, a setting unit 73, and an input / output control unit 74.

[0224] The mechanism control unit 71 is a processing unit that controls the mechanisms of each part of the constituent plate assembly unit 200, film forming unit 300, plate release unit 400, cooling unit 500, and conveying unit 600. In addition, the mechanism control unit 71 controls the drive sources, valves, switches, power supplies, power supply unit 6, RF power supply 56, etc. of the exhaust unit 23, gas supply unit 25, process gas introduction unit 55, motor 32 of the conveying device 30, load lock unit 60, etc.

[0225] The storage unit 72 is a component that stores information required for control in this embodiment. For example, the amount and timing of liquid sprayed using the spray unit 520, the amount and timing of exhaust using the decompression unit 530, and the timing of vacuum breaking using the ventilation unit 540 are included in the information stored in the storage unit 72. The setting unit 73 is a processing unit that sets information input from the outside into the storage unit 72. The input / output control unit 74 is an interface that controls the conversion of signals or input / output between the controlled components and other components.

[0226] Furthermore, the control device 700 is connected to an input device 75 and an output device 76. The input device 75 is an input unit such as a switch, touch screen, keyboard, and mouse used by the operator to operate the film deposition apparatus S via the control device 700. For example, the selection of the sputtering source 4 for film deposition can be input through the input unit. The output device 76 is an output unit such as a display, light, and meter used to present information about the status of the apparatus in a visually identifiable manner to the operator.

[0227] [action]

[0228] The following refers to the above. Figure 1 (A) ~ Figure 12 The operation of this embodiment described above will be explained. First, as... Figure 2 (A) Figure 2 As shown in (B), electronic components 100 are arranged in a matrix and attached to the attachment area 121c of the retaining sheet 120 with pre-emptive spacing, and a frame 130 is closely attached to the outer frame area 121a of the retaining sheet 120.

[0229] (Panel assembly process:) Figure 3 [1] Figure 4 [1]

[0230] The retaining plate 120 and the conveying plate 140 are inserted into the plate assembly section 200. Then, in the plate assembly section 200, the mounting surface 141 of the conveying plate 140 is in close contact with the supporting surface 122 of the retaining plate 120 located on the conveying plate 140.

[0231] (Plate placement process:) Figure 3 [2] Figure 4[2]

[0232] like Figure 6 (A) Figure 6 (B) Figure 7 (A) Figure 7 As shown in (B), the conveyor plate 140, which is closely attached to the retaining piece 120, is mounted on the opposing surface 34a of the tray 34 via the rotating arm 620. At this time, the front end of the protruding member 35a is embedded in the limiting part 143, and the conveyor plate 140 is supported by the support part 35.

[0233] (Film forming process:) Figure 3 [3] Figure 4 [3]

[0234] Multiple trays 34 are sequentially moved from the load lock section 60 into the chamber 20 via the rotating arm 610. The rotating table 31 moves the empty holding sections 33 sequentially to the loading positions moved from the load lock section 60. The holding sections 33 individually hold each tray 34 moved in by the conveying unit. Thus, as... Figure 8 and Figure 9 As shown, the tray 34, on which the electronic components 100, which are to be deposited, are mounted via the holding plate 120 and the transfer plate 140, is entirely placed on the rotary table 31. Furthermore, Figures 8-9 In the middle, the electronic component 100, the retaining plate 120 and the transfer plate 140 mounted on the tray 34 are not shown in the figure.

[0235] The film formation process of the electronic component 100 introduced into the film forming apparatus S as described above will be explained. Furthermore, the following operation is an example of forming an electromagnetic wave shielding film 113 on the surface of the electronic component 100 by cleaning and roughening the surface of the electronic component 100 through the film forming processing units 40A and 40B after cleaning by the surface treatment unit 50. The electromagnetic wave shielding film 113 is formed by alternately layering SUS layers and Cu layers. The SUS layer formed directly on the electronic component 100 serves as a substrate to improve adhesion to the molding resin and Cu. The intermediate Cu layer is a layer that functions to shield electromagnetic waves. The topmost SUS layer is a protective layer to prevent Cu rust and the like.

[0236] First, the vacuum chamber 21 is depressurized by venting through the exhaust section 23. When the vacuum chamber 21 reaches a predetermined pressure, the rotary table 31 rotates and reaches a predetermined rotational speed. In the processing unit 5, the electronic component 100 passes a position facing the opening 51a of the cylindrical electrode 51. In the processing unit 5, argon gas, which serves as process gas G2, is introduced into the cylindrical electrode 51 from the process gas inlet section 55, and a high-frequency voltage is applied to the cylindrical electrode 51 by the RF power supply 56. By applying the high-frequency voltage, the argon gas is plasmaized, thereby generating active species containing ions, etc. The plasma flows from the opening 51a of the cylindrical electrode 51, which serves as the anode, to the conveyor plate 140, the tray 34, and the rotary table 31, which serve as the cathode. The surface of the electronic component 100 is cleaned and roughened by ions, etc., colliding with the surface of the surface treatment section 50 below the opening 51a. Then, after the surface treatment time of the surface treatment section 50 has elapsed, the surface treatment section 50 is stopped. That is, the supply of process gas G2 from the process gas inlet 55 is stopped, and the voltage of the RF power supply 56 is applied.

[0237] Next, the gas supply unit 25 of the film forming processing unit 40A supplies sputtering gas G1 to the area around the target material 41. In this state, the electronic component 100 held by the holding unit 33 moves along the transport path L in a circular trajectory and passes a position facing the sputtering source 4.

[0238] Next, only in the film formation processing section 40A, the power supply section 6 applies electricity to the target material 41. This plasmas the sputtering gas G1. At the sputtering source 4, ions generated by the plasma collide with the target material 41, ejecting particles of the film-forming material. Therefore, on the surface of the electronic component 100 passing through the film formation section M1 of the film formation processing section 40A, particles of the film-forming material accumulate to form a film with each pass. Here, a SUS layer is formed. At this time, the heat from the plasma-heated electronic component 100 is released to the transport plate 140 via the holding plate 120.

[0239] Furthermore, although the electronic component 100 passes through the film-forming section M2 of the film-forming treatment unit 40B, the film-forming treatment unit 40B does not apply electricity to the target material 41, therefore no film-forming process is performed, and the electronic component 100 is not heated. Additionally, the electronic component 100 is not heated in areas other than the film-forming sections M1 and M2. As described above, in the unheated areas, the electronic component 100 and the conveyor plate 140 release heat.

[0240] After the film-forming time of the film-forming treatment unit 40A has elapsed, the film-forming treatment unit 40A is stopped. That is, the power supply unit 6 stops applying power to the target material 41. Then, the power supply unit 6 of the film-forming treatment unit 40B applies power to the target material 41. As a result, the sputtering gas G1 is plasmaified. At the sputtering source 4, ions generated by the plasma collide with the target material 41 and eject particles of the film-forming material. Therefore, on the surface of the electronic component 100 passing through the film-forming section M2 of the film-forming treatment unit 40B, the particles of the film-forming material accumulate to form a film with each passing. Here, a Cu layer is formed. This layer becomes part of the electromagnetic wave shielding film 113. At this time, the heat of the electronic component 100 heated by the plasma is released to the transport plate 140 via the holding plate 120.

[0241] Furthermore, although the electronic component 100 passes through the film-forming section M1 of the film-forming treatment unit 40A, the film-forming treatment unit 40A does not apply electricity to the target material 41, therefore no film-forming process is performed, and the electronic component 100 is not heated. Additionally, the electronic component 100 is not heated in areas other than the film-forming sections M1 and M2. As described above, in the unheated areas, the electronic component 100 and the conveyor plate 140 release heat.

[0242] After the film-forming time of the film-forming treatment unit 40B has elapsed, the film-forming treatment unit 40B is stopped. That is, the power supply unit 6 stops applying power to the target material 41. Then, the power supply unit 6 of the film-forming treatment unit 40A applies power to the target material 41. As a result, the sputtering gas G1 is plasma-generated. At the sputtering source 4, ions generated by the plasma collide with the target material 41 and eject particles of the film-forming material. Therefore, on the surface of the electronic component 100 passing through the film-forming section M1 of the film-forming treatment unit 40A, the particles of the film-forming material accumulate to form a film with each passing. Here, an SUS layer is formed. At this time, the heat of the electronic component 100 heated by the plasma is released to the transport plate 140 via the holding plate 120.

[0243] Furthermore, although the electronic component 100 passes through the film-forming section M2 of the film-forming treatment unit 40B, the film-forming treatment unit 40B does not apply electricity to the target material 41, therefore no film-forming process is performed, and the electronic component 100 is not heated. Additionally, the electronic component 100 is not heated in areas other than the film-forming sections M1 and M2. Thus, in the unheated areas, the electronic component 100 and the conveyor plate 140 release heat.

[0244] After the film-forming time in film-forming treatment unit 40A has elapsed, film-forming treatment unit 40A is stopped. That is, the power supply unit 6 stops applying power to the target material 41. Thus, by repeatedly performing film-forming processes in film-forming treatment units 40A and 40B, a film consisting of stacked SUS, Cu, and SUS films is formed. Furthermore, by repeatedly performing the same film-forming process, films with more than three layers can also be formed. Therefore, as... Figure 1 (A) Figure 1 As shown in (B), an electromagnetic wave shielding film 113 is formed on the top surface 111b and the side surface 111c of the electronic component 100.

[0245] During the film-forming process described above, the rotary table 31 continues to rotate and continuously circulates the tray 34 carrying the electronic components 100. Then, after the film-forming process is completed, the tray 34 carrying the electronic components 100 is sequentially positioned at the load lock part 60 by the rotation of the rotary table 31, and is moved to the outside by the rotating arm 610.

[0246] (Plate removal process:) Figure 3 [4] Figure 4 [4]

[0247] The transfer plate 140 is removed from the tray 34 that was moved out of the film forming section 300 by the rotating arm 620. Then, the transfer plate 140 is put into the plate release section 400 by the robotic arm 630.

[0248] (Board removal process:) Figure 3 [5] Figure 4 [5]

[0249] At the plate detachment section 400, the retaining plate 120 is detached from the conveying plate 140. Furthermore, in a component detachment device (not shown), for example, the electronic component 100 is adsorbed by using negative pressure while the retaining plate 120 is peeled off, thereby detaching the electronic component 100 from the retaining plate 120.

[0250] (Plate cooling process:) Figure 3 [6] Figure 4 [6]

[0251] The transfer plate 140 is moved into the cooling section 500 by the robotic arm 630. That is, as... Figure 11 As shown in (A), the transfer plate 140 is inserted into the receiving section 510 through the opening 511 created by opening the shutter 512, and placed on the support platform 513. Figure 11 As shown in (B), with the shutter 512 closed and the housing 510 sealed, liquid is sprayed from the spray nozzle 515 through the spray unit 520.

[0252] like Figure 11As shown in (C), exhaust gas is released from the exhaust port through the pressure reducing section 530, thereby reducing the pressure inside the receiving section 510 to a vacuum state. At this time, since the sprayed liquid vaporizes, the transfer plate 140 is cooled by the heat of vaporization. The transfer plate 140 is heated to about 60°C to 70°C during the film forming process, although it is only necessary to cool it down to, for example, room temperature (about 25°C), but it is not limited to this. Furthermore, as Figure 11 As shown in (D), vacuum is broken by opening the valve of the vent 540. Then, the shutter 512 is opened, and the transfer plate 140 is moved out of the housing 510 and put into the plate assembly 200 by the robotic arm 630.

[0253] also, Figure 11 (A) ~ Figure 11 In (E), the periphery of the conveyor plate 140 is held on the support platform 513, but this is not a limitation; the entire support surface 142 of the conveyor plate 140 may also be in contact with and held on the plate-shaped support platform 513. By having the cooling plate 516 in surface contact with the conveyor plate 140, the contact area increases, and the heat from the conveyor plate 140 is effectively transferred to the cooling plate 516, thereby improving the cooling effect. If the plate-shaped support platform 513 is formed of metals such as aluminum or SUS, ceramics, resin, or other materials with high thermal conductivity, the cooling effect is further improved.

[0254] [Comparative Test]

[0255] The results of comparative tests on embodiments and comparative examples corresponding to the above-described implementation methods are shown below. Figure 13 middle. Figure 13 (a) ~ Figure 13 (d) is the result obtained by measuring the temperature of the conveyor plate over time in a vacuum chamber outside the film-forming section, with 90°C as the initial temperature. In this measurement, a plate-shaped member made of aluminum alloy and measuring 100 mm × 200 mm × 20 mm was used as the conveyor plate. Furthermore, a platinum thermocouple thermometer was used as the temperature sensing unit, and the measuring point was set at the center of the upper surface of the conveyor plate.

[0256] Figure 13 of (a) Figure 13 (b) shows the results of the cooling time measurement when the transfer plate is placed in the vacuum chamber. Figure 13 (a) is the case where other components are held in the vacuum chamber by point contact and placed in a generally insulated state. Figure 13 (b) is the case of direct placement, i.e. placement in a state of surface contact, where the aluminum block is placed directly on the surface of the vacuum chamber.

[0257] Figure 13 (c) Figure 13(d) is the result of the measurement of the cooling time when liquid is sprayed onto a conveyor plate in a vacuum chamber and vaporized, thereby performing vaporization cooling. Figure 13 (c) is the case where other components are held in the vacuum chamber only in point contact and undergo vaporization cooling in a generally insulated state. This is in contrast to... Figure 11 (A) ~ Figure 11 The method shown in (E) corresponds to this. Figure 13 (d) describes the vaporization cooling process performed on an aluminum block placed in a vacuum chamber with surface contact. The sprayed liquid is pure water, the spray volume per spray is 3.7 g, and the spray interval is 2 sprays / min.

[0258] like Figure 13 As shown, when the target cooling temperature is set to room temperature (25°C), the target temperature is reached in approximately 9 minutes in (d) and approximately 16 minutes in (c). On the other hand, in (a) and (b), even after 30 minutes, the temperature is 70°C in (a) and 30°C in (b), failing to reach the target temperature. Furthermore, even after 60 minutes, the target temperature is still not reached in (a) and (b), with (a) only dropping to 46.6°C and (b) only dropping to 26.7°C.

[0259] [Effects]

[0260] (1) The film forming apparatus S of this embodiment includes: a chamber 20 for introducing sputtering gas G1; a film forming processing unit 40 disposed in the chamber 20, having a sputtering source 4 for forming a film by sputtering to deposit film forming material, and forming a film on the electronic component 100 in the chamber 20 by sputtering source 4; a transfer plate 140 for mounting the electronic component 100 forming a film in the chamber 20; a transfer device 30 for transferring the transfer plate 140 via a tray 34; a tray 34 for being transferred by the transfer device 30; and a support part 35 disposed on the tray 34 for supporting the transfer plate 140 in such a way that a gap is created between the transfer plate 140 and the tray 34.

[0261] In this embodiment, the electronic component 100, which is the object of film formation, is mounted on the transport plate 140. This allows heat from the electronic component 100 during film formation to be released to the transport plate 140, thus suppressing temperature rise in the electronic component. However, internal components such as the rotating stage 31 within the chamber 20 of the film formation section 300 are also heated by plasma. Therefore, when heat from these internal components is transferred to the transport plate 140 via the tray 34, the temperature of the electronic component 100 rises. In particular, when film formation is continuously performed in the film formation section 300, there is a possibility that heat generated by plasma from the previous film formation may remain in the internal components. This residual heat from the internal components is transferred to the electronic component 100 undergoing the next film formation, causing a change in the film formation temperature conditions of the electronic component 100 and potentially leading to changes in the film quality. In this embodiment, the transport plate 140 and the tray 34 provided in the film formation section 300 are supported by the support portion 35 at a distance. Therefore, heat insulation between the conveyor plate 140 and the tray 34 can be achieved, and the heat from the internal components such as the rotary table 31 of the conveying section 600 is not easily transferred to the electronic component 100 through the tray 34 and the conveyor plate 140, thereby suppressing the temperature rise of the electronic component 100.

[0262] (2) The contact area of ​​the support part 35 is less than 5% of the area of ​​the support surface 142 of the conveyor plate 140 supported by the support part 35. Therefore, the heat transfer path from the tray 34 to the conveyor plate 140 is narrowed, and heat is not easily transferred to the electronic component 100.

[0263] (3) The support 35 has a protruding member that protrudes from the pallet 34 toward the conveyor plate 140 and whose front end is connected to the conveyor plate 140. Therefore, it is easy to construct a support that achieves an open gap between the conveyor plate 140 and the pallet 34.

[0264] (4) Multiple support parts 35 are provided. Therefore, multiple support positions can be provided, which can provide stable support for the transfer plate 140 with a gap between it and the pallet 34.

[0265] (5) The conveyor plate 140 has a limiting part 143, which limits the movement of the conveyor plate 140 supported by the supporting part 35 relative to the supporting part. Therefore, the limiting part 143 can prevent the conveyor plate 140 from shifting due to conveying.

[0266] (6) A surface treatment section 50 is provided in the chamber 20. The surface treatment section 50 performs surface treatment on the electronic component 100 or the film formed on the electronic component 100 by making the conveyor plate 140 function as an electrode. The conveyor plate 140 and the support section 35 are conductive. Therefore, the conveyor plate 140 and the support section 35 can have the function of the surface treatment section 50 as an electrode.

[0267] (7) The film-forming apparatus S of this embodiment has a chamber 20 for introducing sputtering gas G1, and has a film-forming processing unit 40 and a cooling unit 500. The film-forming processing unit 40 forms a film on an electronic component 100 mounted on a transport plate 140 within the chamber 20 by a sputtering source 4. The cooling unit 500 cools the transport plate 140 outside the chamber 20. Furthermore, the cooling unit 500 has: a receiving unit 510 for receiving the transport plate 140; a spraying unit 520 for spraying liquid into the receiving unit 510; and a depressurization unit 530 for depressurizing the interior of the receiving unit 510 so as to cool the transport plate 140 by the heat of vaporization of the liquid sprayed by the spraying unit 520.

[0268] As described above, in the cooling section 500, the conveyor plate 140 is cooled and then reused for film formation. This allows for the processing of multiple electronic components without temperature fluctuations, as they are unaffected by the residual heat from the previous processing in the film formation section 300. Since the heat of vaporization of the liquid is utilized during cooling, cooling can be performed at a high speed compared to placing the plate only outside the film formation section 300, enabling efficient film formation with a small number of conveyor plates 140.

[0269] (8) The conveyor plate 140 has a textured or porous surface. Therefore, more liquid can be contained on the surface, resulting in a larger amount of liquid to be vaporized and improved cooling efficiency.

[0270] (9) The electronic component 100 is held by a retaining sheet 120 having an adhesive surface on one side, and a transfer plate 140 is closely attached to the other side of the retaining sheet 120, covering at least the entire area corresponding to the attachment area 121c of the electronic component 100. Therefore, the heat of the electronic component 100 is efficiently transferred to the transfer plate 140.

[0271] [Other Implementation Methods]

[0272] The present invention is not limited to the embodiments described above, and also includes the following methods.

[0273] (1) The shape of the protruding member 35a of the support portion 35 is not limited to the manner described above. It can also be cylindrical, pyramidal, or prismatic. The number of support portions 35 can be one, but for stable support, multiple portions are preferred. For example, there can be three or more. In addition, as Figure 14 As shown in (A), by making the support portion 35 elastic, even if there is deformation of the support surface 142 of the conveyor plate 140, the support portion 35 can make reliable contact, thereby achieving stable support and ensuring conductivity. For example, it can also be configured to support the protruding member 35a by means of an elastic member 35b such as a spring, so that it moves forward and backward toward the conveyor plate 140.

[0274] In addition, such as Figure 14As shown in (B), the protruding member 35a of the support 35 can be configured as a wall shape or a embankment shape extending along the opposing surfaces. This ensures a reduction in resistance and stability of the support due to the increased contact area between the protruding member 35a and the conveying plate 140.

[0275] Furthermore, by using a flexible material for the support portion 35, even with deformation of the support surface 142 of the conveyor plate 140, the support portion 35 can still make reliable contact, thereby ensuring stable support and conductivity. For example, such as Figure 14 As shown in (C), a brush made of metal such as copper can be used as the support part 35. Alternatively, a metal mesh component can also be used. Furthermore, a mechanical support component and an electrically conductive support component can be combined as the support part 35. For example, the aforementioned support components can also be combined. Moreover, for electrical connection, the conveyor plate 140 and the support part 35 only need to contact at least one part. Furthermore, the support position of the conveyor plate 140 using the support part 35 is not limited to the support surface 142 on the side opposite to the side where the electronic component 100 is placed. For example, a portion of the side of the conveyor plate 140 or both the side and the support surface 142 can be supported.

[0276] (2) The number of targets in the film-forming treatment section 40 is not limited to two. One target or more targets may be used. Furthermore, the number of film-forming sections may be two or fewer, or four or more. Additionally, if... Figure 15 As shown, for example, a film-forming section 300 may have film-forming treatment sections 40A to 40C, but not a surface treatment section 50 that uses the conveyor plate 140 and tray 34 as part of the electrode. In this case, in order to ensure the conductivity of the conveyor plate 140 and tray 34, it is not necessary for the support section 35 to be conductive. That is, the materials of the conveyor plate 140, tray 34, and support section 35 may not be conductive. For example, at least one of the conveyor plate 140, tray 34, and support section 35 may be made of ceramic or synthetic resin or a composite material thereof with good thermal conductivity.

[0277] (3) In the aforementioned method, the cooling unit 500 can also reduce the temperature of the conveyor plate 140 by performing multiple liquid spraying and venting operations. In this case, the number of times the storage unit 72 of the control device 700 is set to the desired temperature can be predetermined through experiments, and liquid spraying and venting are performed only the predetermined number of times. Alternatively, the control device 700, which is equipped with a temperature detection unit that detects the temperature of the conveyor plate 140, can also perform liquid spraying and venting until the detected temperature obtained by the temperature detection unit reaches the predetermined temperature. Thus, by adjusting the amount of liquid sprayed each time and ensuring that the amount of liquid adhering to the conveyor plate 140 does not become excessive, and repeating this process, the temperature can be reduced to the target temperature, thereby preventing residual liquid from affecting film formation. In addition, as Figure 16 (A) ~ Figure 16 As shown in (E), it can also be configured to accommodate multiple conveyor plates 140 within the receiving section 510 of the cooling section 500. For example, a multi-tiered support platform can be provided within the receiving section 510. This allows for centralized cooling of multiple conveyor plates, thereby improving operational efficiency. Furthermore, for example, as... Figure 16 (A) ~ Figure 16 As shown in (E), the temperature sensing unit 513a is disposed on the surface of the support conveyor plate 140 of the support platform 513. Therefore, when the conveyor plate 140 is placed on the support platform 513, it can be brought into contact with the temperature sensing unit 513a to detect the temperature. The temperature sensing unit can be any known temperature sensor such as a thermocouple, a resistance temperature sensor, a thermistor, or a radiation thermometer, and its position is not limited to the described method.

[0278] (4) Furthermore, such as Figure 17 (A) ~ Figure 17 As shown in (E), the configuration can also be as follows: a cooling plate 516 having a contact surface 516a that contacts the conveyor plate 140 is provided, liquid is sprayed onto the side of the cooling plate 516 opposite to the contact surface 516a by a spray unit 520, and pressure is reduced by a pressure reduction unit 530. In this case, the cooling plate 516 hermetically divides the housing 510 into a cooling chamber 517 on the side of the contact surface 516a that contacts the conveyor plate 140 and the side opposite to it, and the cooling chamber 517 is provided as a space for pressure reduction. The cooling plate 516 is formed of a metal such as aluminum or SUS, ceramic, resin, or other materials with high thermal conductivity. The side of the cooling plate 516 opposite to the contact surface 516a, i.e., the side of the cooling chamber 517, has irregularities or is porous. Irregularities can be formed, for example, by performing a surface roughening treatment. Alternatively, it can be configured to have larger irregularities, such as those of a heat sink. For example, if the conveyor plate 140 is aluminum, the porous nature can be formed by performing an alumina film treatment.

[0279] In addition, the exhaust port 514 and the spray port 515 are provided in a manner that connects to the cooling chamber 517, and the pressure reducing unit 530 is connected to the exhaust port 514, while the spray unit 520 and the ventilation unit 540 are connected to the spray port 515.

[0280] In the aforementioned method, such as Figure 17 As shown in (A), the conveyor plate 140 is inserted into the receiving portion 510 through the opening 511 created by opening the shutter 512, and is placed on the contact surface 516a of the cooling plate 516. Figure 17 As shown in (B), when the shutter 512 is closed, liquid is sprayed from the spray nozzle 515 into the cooling chamber 517 through the spray section 520.

[0281] like Figure 17 As shown in (C), exhaust gas is discharged from the exhaust port through the pressure reducing section 530, thereby reducing the pressure inside the cooling chamber 517. At this time, the sprayed liquid vaporizes, thus cooling the cooling plate 516. This cools the conveyor plate 140, which is in contact with the cooling plate 516. Furthermore, as... Figure 17 As shown in (D), vacuum is broken by opening the valve of the vent 540. Then, the shutter 512 is opened, and the transfer plate 140 is moved out of the housing 510 and put into the plate assembly 200 by the robotic arm 630.

[0282] In the above-described method, since the liquid does not directly adhere to the conveyor plate 140, it prevents residual liquid on the conveyor plate 140 from affecting film formation. Furthermore, the cooling plate 516 makes surface contact with the conveyor plate 140, increasing the contact area. Therefore, as described... Figure 13 As shown in (d), the heat from the conveyor plate 140 is effectively released to the cooling plate 516, improving the cooling effect. In this manner, the cooling unit 500 can also reduce the temperature of the conveyor plate by performing multiple liquid spraying and venting operations. In this case, the storage unit 72 of the control device 700 can be preset to the desired temperature a certain number of times through experiments, etc., and the liquid spraying and venting can be performed only a set number of times. In addition, the control device 700, which is equipped with a temperature detection unit that detects the temperature of the conveyor plate 140, can repeatedly perform liquid spraying and venting until the detected temperature obtained by the temperature detection unit reaches the preset temperature.

[0283] (5) The shapes of the conveyor plate 140 and the tray 34 are not limited to rectangles. They can be various shapes such as circles and ovals. An adhesive sheet may also be present between the retaining piece 120 and the conveyor plate 140. The way the electronic component 100 is mounted relative to the conveyor plate 140 is not limited to the above-described method. The frame 130 may be omitted, and the electronic component 100 may be mounted on the conveyor plate 140 using only the retaining piece 120. Furthermore, the electronic component 100 may be directly held on the conveyor plate 140. The number of conveyor plates 140 mounted on the tray 34 and the number of electronic components 100 mounted on the conveyor plates 140 may be one or more.

[0284] (6) The cooling unit 500 is not limited to using heat of vaporization. Cooling can also be achieved by bringing the conveyor plate 140 into contact with a cooling plate cooled according to other principles. For example, the cooling plate can be cooled by circulating cooling water such as water, by using a Peltier element, or by using air from a fan. Furthermore, the cooling unit 500 can be placed outside the film-forming section 300 without providing it.

[0285] (7) Regarding the film-forming material, various materials that can be sputtered to form a film can be used. For example, Al, Ag, Ti, Nb, Pd, Pt, Zr, etc. can be used as electromagnetic wave shielding films. Furthermore, Ni, Fe, Cr, Co, etc. can be used as magnets. In addition, SUS, Ni, Ti, V, Ta, etc. can be used as the bonding layer of the substrate, and SUS, Au, etc. can be used as the outermost protective layer.

[0286] (8) The packaging of the electronic component 100 can be any of the currently available or future available methods, such as Ball Grid Array (BGA), Land Grid Array (LGA), Small Outline Package (SOP), Quad Flat Package (QFP), and Wafer Level Package (WLP). Even if it is set as a terminal for electrical connection between the electronic component 100 and the outside, for example, a hemispherical type such as BGA or a planar type such as LGA is considered, or a thin plate type such as SOP or QFP is considered, but any currently available or future available terminals can be used, and their formation position is not important. In addition, the component 11 sealed inside the electronic component 100 can be a single one or multiple.

[0287] (9) The number of trays and electronic components simultaneously transported by the conveying unit and the number of holding parts for holding them are at least one, and are not limited to the number exemplified in the above embodiments. That is, the film can be formed repeatedly for one electronic component or for two or more electronic components.

[0288] (10) Cleaning or surface treatment using etching or ashing can also be performed in a chamber separate from the chamber containing the film-forming area. Furthermore, in the case of oxidation or post-oxidation treatment, oxygen can be used as process gas G2. In the case of nitriding treatment, nitrogen can be used as process gas G2.

[0289] (11) In the embodiment described above, the rotary table 31 is assumed to rotate in a horizontal plane. However, the orientation of the rotating surface of the conveying unit is not limited to a specific direction. For example, it may be a rotating surface that rotates in a vertical plane. Furthermore, the conveying unit of the conveying unit is not limited to a rotary table. For example, it may be a rotating body that has a cylindrical member with a holding part for holding the workpiece and rotates around an axis. In addition, the trajectory of the cyclic conveying is not limited to a circle. It widely includes a method of cyclic conveying using an endless conveying path. For example, it may be rectangular or elliptical, and may also include a bent or curved path. The conveying path may also be constructed by a conveyor or the like.

[0290] Furthermore, the present invention can be a film-forming apparatus S comprising: a chamber 20 for introducing sputtering gas G1; a film-forming processing unit 40 disposed within the chamber 20 for forming a film on the electronic component 100 via a sputtering source 4; and a transfer plate 140 supported by a tray 34 and used to hold the electronic component 100. Therefore, it can also be a film-forming apparatus S that forms a film in a stationary state without continuously transporting the electronic component 100. That is, it can also be an apparatus that moves the tray 34, which carries the electronic component 100 via the transfer plate 140, into the processing area and performs sputtering without changing the relative position with respect to the target 41.

[0291] (12) In the embodiment described above, the film is formed by selectively depositing film-forming materials one by one. However, the present invention is not limited to this, as long as a film containing multiple film-forming materials can be formed by selectively depositing film-forming materials. Therefore, two or more film-forming materials can be deposited simultaneously. For example, sometimes an alloy of Co, Zr, and Nb is used to form an electromagnetic wave shielding film. In this case, a film-forming treatment unit using Co as the film-forming material, a film-forming treatment unit using Zr as the film-forming material, and a film-forming treatment unit using Nb as the film-forming material can be selected from multiple film-forming treatment units to form a film.

[0292] Furthermore, in the aforementioned case, the film-forming processing section for film formation or the configuration of the dividing section that divides the film-forming processing section can be selected in such a way that the portion of the circumferential trajectory other than the portion of the film-forming section in the film formation is longer than the portion of the film formation section in the film formation.

[0293] That is, in either case of selecting multiple or one film-forming treatment units for film formation, or selecting a single film-forming treatment unit for film formation, the film-forming treatment unit for film formation can be selected or the configuration of the dividing section for dividing the film-forming treatment unit can be set in such that the trajectory traversed by the part outside the film-forming part in the circumferential trajectory is longer than the trajectory traversed by the part in the film-forming part in the film formation.

[0294] (13) The embodiments and variations of the present invention have been described above, but the embodiments and variations are provided as examples only and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and variations are included within the scope or spirit of the invention and are included within the invention as described in the claims.

Claims

1. A film-forming apparatus, characterized in that, include: The chamber has a space that can be set to a vacuum by decompression and is used for the introduction of sputtering gas; A film-forming processing unit is provided in the cavity, having a sputtering source for depositing film-forming material by sputtering to form a film, and forming a film on an electronic component in the cavity in a depressurized space by the sputtering source; A transfer plate carries the electronic components that are being deposited with a film within the cavity; The conveying device transports the conveyor plate via a pallet; and A support portion is provided on the pallet, and supports the transfer plate in such a way that a heat-insulating gap is created between the transfer plate and the pallet. The contact area of ​​the support portion is less than 5% of the area of ​​the support surface of the conveyor plate supported by the support portion. The support portion is only provided in the areas corresponding to the four corners of the conveying plate. The gap between the supporting surface of the conveyor plate and the opposing surface of the tray opposite the supporting surface is a gap that prevents the film-forming material from entering. The cavity includes a surface treatment section, which performs surface treatment on the electronic components or the films formed on the electronic components by using the conveyor plate as an electrode. The conveying plate is conductive. The support portion is conductive and elastic.

2. The film-forming apparatus according to claim 1, characterized in that: The support portion has a protruding member that extends from the pallet toward the conveyor plate and whose front end is connected to the conveyor plate.

3. The film-forming apparatus according to claim 1, characterized in that: The conveying plate has a limiting part that restricts the movement of the conveying plate, which is supported by the supporting part, relative to the supporting part.

4. The film-forming apparatus according to claim 1, characterized in that: The electronic component is held by a retaining sheet having an adhesive surface on one side. On the other side of the retaining sheet, the conveying plate is closely attached to at least the entire area corresponding to the attachment area of ​​the electronic component.

5. The film-forming apparatus according to claim 3, characterized in that: The limiting portion consists of a plurality of recessed holes formed on the support surface of the conveying plate supported by the supporting portion. One of the plurality of recessed holes is designated as the reference hole, and the other recessed holes are larger than the reference hole.

6. The film-forming apparatus according to claim 4, characterized in that: The heat capacity of the conveying plate is greater than that of the holding plate.

7. The film-forming apparatus according to claim 1, characterized in that: The chamber also includes a cooling section for cooling the conveyor plate. The cooling section has: The containment section houses the aforementioned transport plate; The spray section sprays liquid into the containment section; and The decompression section depressurizes the interior of the receiving section to cool the conveying plate by the heat of vaporization of the liquid sprayed by the spray section.

8. The film-forming apparatus according to claim 1 or 7, characterized in that: The conveying plate has uneven or porous portions on its surface.

9. The film-forming apparatus according to claim 7, characterized in that, The chamber also includes a cooling section for cooling the conveyor plate. The cooling section has: The containment section houses the aforementioned transport plate; The spray section sprays liquid into the containment section; and A cooling plate having a contact surface that contacts the conveyor plate. Liquid is sprayed onto the side of the cooling plate opposite to the contact surface through the spray section, and pressure is reduced using the pressure reducing section.

10. The film-forming apparatus according to claim 7, characterized in that: The cooling unit includes a temperature detection unit for detecting the temperature of the conveyor plate.

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