Substrate structure and preparation method thereof, light-emitting device and preparation method thereof

Abstract

A substrate structure and a method for preparing the substrate structure, a light-emitting device and a method for preparing the light-emitting device. The substrate structure may include a substrate (1), a mask layer (2) and an epitaxial structure (3); the mask layer (2) is provided on the substrate (1) and is provided with an opening (201) for exposing the substrate (1); the epitaxial structure (3) is provided at the opening (201) of the mask layer (2); and the material of the mask layer (2) is different from the material of the epitaxial structure (3).

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a substrate structure and a method for preparing the substrate structure, a light-emitting device and a method for preparing the light-emitting device. Background Art

[0002] In recent years, light emitting diodes (LEDs), as a new generation of green light sources, have been widely used in lighting, backlighting, display, indication and other fields.

[0003] Currently, in the process of manufacturing light-emitting diodes, it is often necessary to epitaxially grow a light-emitting structure layer on a substrate to form the LED. Because the substrate absorbs the light emitted by the light-emitting structure layer, resulting in reduced luminous efficiency of the LED, it is necessary to peel the substrate off. However, this substrate is difficult to peel off. Summary of the Invention

[0004] The purpose of the present disclosure is to provide a substrate structure and a method for preparing the substrate structure, a light-emitting device and a method for preparing the light-emitting device, which can solve the problem that the substrate is difficult to peel off.

[0005] According to one aspect of the present disclosure, there is provided a substrate structure for a light-emitting device, the substrate structure comprising:

[0006] substrate;

[0007] a mask layer, disposed on the substrate, wherein the mask layer is provided with an opening for exposing the substrate;

[0008] The epitaxial structure is arranged at the opening, and the material of the mask layer is different from that of the epitaxial structure.

[0009] Furthermore, the epitaxial structure extends out of the opening.

[0010] Furthermore, there are multiple openings and multiple epitaxial structures, and the multiple epitaxial structures correspond to the multiple openings one by one. The multiple openings and the multiple epitaxial structures are arranged at intervals.

[0011] Furthermore, the substrate or the epitaxial structure is made of silicon, germanium or a silicon-germanium alloy.

[0012] Furthermore, the substrate is a polarized substrate, and the bias angle of the substrate is 0 0 -8 0 .

[0013] Furthermore, the mask layer is a reflector.

[0014] According to one aspect of the present disclosure, a method for preparing a substrate structure is provided. The substrate structure is used for a light-emitting device, and the preparation method includes:

[0015] forming a mask layer on a substrate, wherein the mask layer is provided with an opening exposing the substrate;

[0016] Using the mask layer as a mask, epitaxial growth is performed on the substrate to form an epitaxial structure. The epitaxial structure is arranged at the opening. The material of the mask layer is different from that of the epitaxial structure.

[0017] According to one aspect of the present disclosure, a method for preparing a substrate structure is provided. The substrate structure is used for a light-emitting device, and the preparation method includes:

[0018] forming an epitaxial layer on a substrate;

[0019] patterning the epitaxial layer to form an epitaxial structure, wherein a cross-sectional area of ​​the epitaxial structure in a direction parallel to the substrate is smaller than an area of ​​the substrate;

[0020] forming an oxide layer on the surface of the substrate and the surface of the epitaxial structure;

[0021] A portion of the oxide layer located on the upper surface of the epitaxial structure is removed to form a mask layer having an opening exposing the epitaxial structure, wherein the material of the mask layer is different from that of the epitaxial structure.

[0022] According to one aspect of the present disclosure, there is provided a light emitting device, comprising:

[0023] The above-mentioned substrate structure;

[0024] The light-emitting structure layer is arranged on a side of the epitaxial structure facing away from the substrate.

[0025] Furthermore, the light-emitting structure layer extends out of the epitaxial structure in a direction parallel to the substrate, and the portion of the light-emitting structure layer extending out of the epitaxial structure is arranged obliquely to the substrate and faces the surface of the mask layer, and the area of ​​the upper surface of the light-emitting structure layer is larger than the area of ​​the lower surface in contact with the epitaxial structure.

[0026] Furthermore, an angle between a surface of the portion of the light emitting structure layer extending out of the epitaxial structure and facing the mask layer and the substrate is 20°-70°.

[0027] According to one aspect of the present disclosure, there is provided a method for preparing a light-emitting device, comprising:

[0028] Prepare a substrate structure using the above-mentioned method for preparing a substrate structure;

[0029] A light emitting structure layer is epitaxially grown on the epitaxial structure of the substrate structure.

[0030] Furthermore, the preparation method further comprises:

[0031] The substrate structure is removed.

[0032] The substrate structure and the method for preparing the substrate structure, the light-emitting device and the method for preparing the light-emitting device disclosed herein, during use, the surface of the epitaxial structure of the substrate structure facing away from the substrate is used to grow the light-emitting structure layer to form the light-emitting device; since the mask layer is arranged on the substrate, the epitaxial structure is arranged at the opening on the mask layer that exposes the substrate, so that the surface of the epitaxial structure facing away from the substrate is smaller than the area of ​​the substrate, thereby reducing the area of ​​the contact surface between the light-emitting structure layer and the substrate structure, making the substrate structure easy to peel off, and solving the problem that the substrate is difficult to peel off; in an optional scheme, the light-emitting structure layer is arranged on the side of the epitaxial structure facing away from the substrate, and the surface of the light-emitting structure layer extending out of the epitaxial structure facing the mask layer is inclined to the substrate, which is conducive to total reflection of light and reduces light leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic diagram of a substrate and a mask layer of a substrate structure according to a first embodiment of the present disclosure;

[0034] Figure 2 is a schematic diagram of a substrate structure according to a first embodiment of the present disclosure;

[0035] Figure 3 is a flow chart of a method for preparing a substrate structure according to a first embodiment of the present disclosure;

[0036] Figure 4 is a schematic diagram of a substrate structure of a fourth embodiment of the present disclosure;

[0037] Figure 5 is a schematic diagram of a light-emitting device according to a fifth embodiment of the present disclosure;

[0038] Figure 6 is a flow chart of a method for preparing a light-emitting device according to a fifth embodiment of the present disclosure;

[0039] Figure 7 is a flow chart of a method for preparing a substrate structure according to a seventh embodiment of the present disclosure;

[0040] Figure 8 1 is a schematic diagram after step S300 is completed in the method for preparing a substrate structure according to the seventh embodiment of the present disclosure;

[0041] Figure 9 1 is a schematic diagram after step S310 is completed in the method for preparing a substrate structure according to the seventh embodiment of the present disclosure;

[0042] Figure 10 1 is a schematic diagram after step S320 is completed in the method for preparing the substrate structure of the seventh embodiment of the present disclosure;

[0043] Figure 11 1 is a schematic diagram after step S330 is completed in the method for preparing the substrate structure of the seventh embodiment of the present disclosure;

[0044] Figure 12 This is a schematic diagram of a light-emitting device prepared based on the substrate structure of Example 7 of the present disclosure.

[0045] Explanation of the accompanying drawings: 1. substrate; 2. mask layer; 201. opening; 3. epitaxial structure; 4. light-emitting structure layer; 401. first conductive type semiconductor layer; 402. active layer; 403. second conductive type semiconductor layer; 5. epitaxial layer; 6. oxide layer. DETAILED DESCRIPTION

[0046] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different figures represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0047] Example 1

[0048] The first embodiment of the present disclosure provides a substrate structure and a method for preparing the substrate structure. The substrate structure can be used for a light-emitting device. The light-emitting device can be a light-emitting diode (LED). Figure 1 and Figure 2 As shown, the substrate structure may include a substrate 1, a mask layer 2, and an epitaxial structure 3, wherein:

[0049] The mask layer 2 is disposed on the substrate 1. The mask layer 2 is provided with an opening 201 exposing the substrate 1. The epitaxial structure 3 is disposed at the opening 201 of the mask layer 2. The material of the mask layer 2 is different from that of the epitaxial structure 3.

[0050] In the substrate structure of the first embodiment of the present disclosure, during use, the surface of the epitaxial structure 3 facing away from the substrate 1 is used to grow the light-emitting structure layer 4 to form a light-emitting device; since the mask layer 2 is arranged on the substrate 1, the epitaxial structure 3 is arranged at the opening 201 on the mask layer 2 that exposes the substrate 1, so that the surface of the epitaxial structure 3 facing away from the substrate 1 is smaller than the area of ​​the substrate 1, thereby reducing the area of ​​the contact surface between the light-emitting structure layer 4 and the substrate structure, making the substrate structure easy to peel off, and solving the problem that the substrate 1 is difficult to peel off.

[0051] The following describes in detail the various parts of the substrate structure of the first embodiment of the present disclosure:

[0052] like Figure 1 and Figure 2As shown, the material of the substrate 1 can be silicon. Of course, the material of the substrate 1 can also be germanium, but the embodiment of the present disclosure is not limited thereto. The material of the substrate 1 can also be a silicon-germanium alloy. The substrate 1 is a monocrystalline substrate with a bias angle of 0 0 -8 0 , for example 0 0 , 2 0 , 4 0 , 8 0 Based on this, the problem of uneven growth of the (111) crystal plane of silicon can be solved, defects such as phase domains and grain boundaries in the epitaxial structure 3 can be reduced, and the quality can be improved.

[0053] like Figure 1 As shown, the mask layer 2 is disposed on the substrate 1. The material of the mask layer 2 can be different from that of the substrate 1. For example, the material of the mask layer 2 can be silicon oxide, such as SiO2. The mask layer 2 is provided with an opening 201. The opening 201 penetrates the mask layer 2 in the thickness direction of the mask layer 2. The number of openings 201 can be one, two, four, or more. For example, if there are multiple openings 201, the multiple openings 201 are spaced apart. Because the openings 201 penetrate the mask layer 2, the substrate 1 is exposed through the openings 201 on the mask layer 2.

[0054] like Figure 1 and Figure 2 As shown, the epitaxial structure 3 is provided at the opening 201 of the mask layer 2. The epitaxial structure 3 can be connected to the area of ​​the substrate 1 exposed to the opening 201. The material of the substrate 1 and the epitaxial structure 3 can be the same, or of course, different. The material of the epitaxial structure 3 can also be silicon, germanium, or a silicon-germanium alloy. The number of the epitaxial structures 3 can be the same as the number of the openings 201 on the mask layer 2. Taking the number of openings 201 on the mask layer 2 as an example, the number of the epitaxial structures 3 is also multiple, and the multiple epitaxial structures 3 are provided in a one-to-one correspondence at the multiple openings 201, and the multiple epitaxial structures 3 are arranged at intervals. The epitaxial structure 3 can extend out of the opening 201 on the mask layer 2.

[0055] The method for preparing the substrate structure of the first embodiment of the present disclosure is used to prepare the above-mentioned substrate structure. Figure 3 As shown, the method for preparing the substrate structure may include steps 100 to 110, wherein:

[0056] Step 100: Form a mask layer on a substrate, wherein the mask layer has an opening for exposing the substrate.

[0057] Step 110 : Using the mask layer as a mask, epitaxial growth is performed on the substrate to form an epitaxial structure. The epitaxial structure is provided at the opening. The material of the mask layer is different from that of the epitaxial structure.

[0058] The following is a detailed description of each step of the method for preparing the substrate structure of the first embodiment of the present disclosure:

[0059] In step 100, a mask layer is formed on a substrate, wherein the mask layer has openings for exposing the substrate.

[0060] Among them, the structure after step 100 is completed is as follows Figure 1 As shown. For example, step 100 may include: forming a dielectric material layer on a substrate 1; patterning the dielectric material layer to form a mask layer 2, wherein the mask layer 2 has an opening 201 that exposes the substrate 1. In the embodiment of the present disclosure, the dielectric material layer may be patterned using a photolithography process, but the embodiment of the present disclosure is not limited thereto. Furthermore, the material of the dielectric material layer is different from that of the substrate 1.

[0061] In step 110 , epitaxial growth is performed on the substrate using the mask layer as a mask to form an epitaxial structure. The epitaxial structure is disposed at the opening. The material of the mask layer is different from that of the epitaxial structure.

[0062] The structure after step 110 is completed is as follows Figure 2 As shown. In the first embodiment of the present disclosure, epitaxial growth can be performed on the substrate 1 by atomic layer deposition. Of course, epitaxial growth can also be performed on the substrate 1 by chemical vapor deposition, but the present disclosure is not limited thereto. Because the material of the mask layer 2 is different from that of the epitaxial structure 3, it is difficult for the epitaxial structure 3 to grow on the surface of the mask layer 2.

[0063] In addition, the preparation method of the substrate structure provided in the first embodiment of the present disclosure and the substrate structure belong to the same inventive concept, and the description of relevant details and beneficial effects can be referred to each other and will not be repeated here.

[0064] Example 2

[0065] The substrate structure and method for preparing the substrate structure of the second embodiment of the present disclosure are substantially the same as those of the first embodiment of the present disclosure, with the only difference being that the mask layer of the second embodiment of the present disclosure is a reflector. For example, the mask layer of the second embodiment of the present disclosure is a Bragg reflector. The material of the Bragg reflector can be selected from a group of multi-periodic materials selected from a group including TiO2 / SiO2, SiO2 / SiN, Ti3O5 / SiO2, Ta2O5 / SiO2, Ti3O5 / Al2O3, ZrO2 / SiO2, or TiO2 / Al2O3, but the present embodiment of the present disclosure is not limited thereto.

[0066] Compared with the first embodiment, the mask layer of the second embodiment is a reflector that can reflect light, so that the second embodiment does not need to peel off the substrate and epitaxial structure, simplifies the preparation process, and also improves the external quantum efficiency and luminous efficiency of the light-emitting device.

[0067] Example 3

[0068] The substrate structure and method for manufacturing the substrate structure in the third embodiment of the present disclosure are substantially the same as those in the second embodiment of the present disclosure, with the only difference being that the mask layer in the second embodiment of the present disclosure is a metal reflector. The metal reflector can be made of Ag, Ni / Ag / Ni, etc., but the present disclosure is not limited thereto.

[0069] Example 4

[0070] The substrate structure and the method for preparing the substrate structure of the fourth embodiment of the present disclosure are substantially the same as the substrate structure and the method for preparing the substrate structure of any one of the first to third embodiments of the present disclosure. The only difference is that: Figure 4 As shown, the epitaxial structure 3 of the fourth embodiment of the present disclosure does not extend out of the opening 201 of the mask layer 2. The surface of the epitaxial structure 3 away from the substrate 1 can be flush with the surface of the mask layer 2 away from the substrate 1. In other words, the distance between the surface of the epitaxial structure 3 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2 is equal to the distance between the surface of the mask layer 2 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2. Of course, the distance between the surface of the epitaxial structure 3 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2 can be less than the distance between the surface of the mask layer 2 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2.

[0071] Example 5

[0072] The fifth embodiment of the present disclosure provides a light emitting device and a method for preparing the light emitting device. The light emitting device may be a light emitting diode (LED). Figure 5 As shown, the light-emitting device may include a light-emitting structure layer 4 and the substrate structure described in any one of the first to fourth embodiments. The light-emitting structure layer 4 may be provided on the side of the epitaxial structure 3 in the substrate structure that faces away from the substrate 1. For example, in the case where the substrate 1 is made of silicon and the mask layer 2 is a reflector, the light emitted by the light-emitting structure layer 4 can be reflected by the mask layer 2, thereby reducing the absorption of light by the substrate 1 and improving the luminous efficiency of the light-emitting device.

[0073] like Figure 5As shown, the light-emitting structure layer 4 may include a stacked first-conductivity-type semiconductor layer 401, an active layer 402, and a second-conductivity-type semiconductor layer 403. The active layer 402 may have at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. Taking the multiple quantum well structure as an example, the active layer 402 may include alternating well layers and barrier layers. The first conductivity type is different from the second conductivity type. The first-conductivity-type semiconductor layer 401 may be an N-type semiconductor layer, and the second-conductivity-type semiconductor layer 403 may be a P-type semiconductor layer, but this is not specifically limited in the present embodiment. Furthermore, the first-conductivity-type semiconductor layer 401 may be located on the side of the second-conductivity-type semiconductor layer 403 that is closer to the epitaxial structure 3. The N-type semiconductor layer is used to provide electrons, and the P-type semiconductor layer is used to provide holes, so that electrons and holes recombine in the active layer 402 to produce light. The N-type semiconductor layer and / or the P-type semiconductor layer may include a Group III nitride material. The Group III nitride material may be at least one of GaN, AlGaN, InGaN, and AlInGaN. The N-type ions in the N-type semiconductor layer may be at least one of Si ions, Ge ions, Sn ions, Se ions, or Te ions. The P-type dopant ions in the P-type semiconductor layer may be at least one of Mg ions, Zn ions, Ca ions, Sr ions, or Ba ions.

[0074] like Figure 5 As shown, the light-emitting structure layer 4 extends beyond the epitaxial structure 3 in a direction parallel to the substrate 1. That is, the orthographic projection of the light-emitting structure layer 4 on the substrate 1 is larger than the orthographic projection of the epitaxial structure 3 on the substrate 1, and the orthographic projection of the epitaxial structure 3 on the substrate 1 is located within the orthographic projection area of ​​the light-emitting structure layer 4 on the substrate 1. The surface of the portion of the light-emitting structure layer 4 extending beyond the epitaxial structure 3 that faces the mask layer 2 is inclined relative to the substrate 1, and the area of ​​the upper surface of the light-emitting structure layer 4 is larger than the area of ​​the lower surface that contacts the epitaxial structure 3, thereby facilitating total reflection of light and reducing light leakage. The upper surface of the light-emitting structure layer 4 is the surface of the light-emitting structure layer 4 facing away from the substrate 1, and the lower surface of the light-emitting structure layer 4 is the surface of the light-emitting structure layer 4 facing the substrate 1. The angle α between the surface of the portion of the light-emitting structure layer 4 extending beyond the epitaxial structure 3 that faces the mask layer 2 and the substrate 1 can be 20°-70°, for example, 20°, 36°, 55°, 60°, 70°, etc. In addition, taking the example of the first conductive type semiconductor layer 401 being located on the side of the second conductive type semiconductor layer 403 close to the epitaxial structure 3, the surface of the portion of the light-emitting structure layer 4 extending out of the epitaxial structure 3 facing the mask layer 2 can be the surface of the portion of the first conductive type semiconductor layer 401 extending out of the epitaxial structure 3 facing the mask layer 2.

[0075] Of course, the light-emitting device of the fifth embodiment of the present disclosure may further include a first electrode and a second electrode. The first electrode may be electrically connected to the first conductive type semiconductor layer. The second electrode may be electrically connected to the second conductive type semiconductor layer.

[0076] The method for preparing the light emitting device of the fifth embodiment of the present disclosure is used to prepare the above light emitting device. Figure 6 As shown, the method for preparing the light-emitting device may include steps 200 to 210, wherein:

[0077] Step 200: Prepare a substrate structure using the method for preparing a substrate structure described in any one of the first to fourth embodiments.

[0078] Step 210: epitaxially grow a light-emitting structure layer on the epitaxial structure of the substrate structure.

[0079] like Figure 5 As shown, taking the material of the first conductive type semiconductor layer 401 of the light emitting structure layer 4 including GaN as an example, in step 210, due to the difference in bond energy, it is difficult for Ga atoms and N atoms to nucleate on the mask layer 2 of the substrate structure, thereby making it difficult for the first conductive type semiconductor layer 401 to grow on the mask layer 2.

[0080] In addition, the preparation method of the light-emitting device provided in the fifth embodiment of the present disclosure and the light-emitting device belong to the same inventive concept, and the description of the relevant details and beneficial effects can be referred to each other and will not be repeated here.

[0081] Example 6

[0082] The light-emitting device and method for manufacturing the light-emitting device of Example 6 of the present disclosure are substantially the same as those of Example 5 of the present disclosure, with the only difference being that after epitaxially growing the light-emitting structure layer on the epitaxial structure of the substrate structure, the substrate structure can be removed. In the present embodiment, a chemical etching stripping process can be used to remove the substrate structure. For example, where both the substrate and the epitaxial structure are made of silicon, the etching solution used in the chemical etching stripping process can be a mixture of hydrofluoric acid, nitric acid, and acetic acid.

[0083] Example 7

[0084] like Figure 7 As shown, the method for preparing the substrate structure of the seventh embodiment of the present disclosure may include steps 300 to 330, wherein:

[0085] Step 300: Form an epitaxial layer on a substrate.

[0086] Step 310 : patterning the epitaxial layer to form an epitaxial structure, wherein the cross-sectional area of ​​the epitaxial structure in a direction parallel to the substrate is smaller than the area of ​​the substrate.

[0087] Step 320: forming an oxide layer on the surface of the substrate and the surface of the epitaxial structure.

[0088] Step 330 : removing a portion of the oxide layer located on the upper surface of the epitaxial structure to form a mask layer having an opening exposing the epitaxial structure. The material of the mask layer is different from that of the epitaxial structure.

[0089] The substrate, epitaxial structure and mask layer of the seventh embodiment of the present disclosure are the same as the substrate, epitaxial structure and mask layer of any one of the first to fourth embodiments of the present disclosure.

[0090] The following is a detailed description of each step of the method for preparing the substrate structure of the seventh embodiment of the present disclosure:

[0091] In step 300, an epitaxial layer is formed on a substrate.

[0092] like Figure 8 As shown, the material of the epitaxial layer 5 can be the same as, or different from, the material of the substrate 1. The material of the epitaxial layer 5 can be silicon, germanium, or a silicon-germanium alloy.

[0093] In step 310 , the epitaxial layer is patterned to form an epitaxial structure, wherein the cross-sectional area of ​​the epitaxial structure in a direction parallel to the substrate is smaller than the area of ​​the substrate.

[0094] like Figure 8 and Figure 9 As shown, the present disclosure can pattern the epitaxial layer 5 through a photolithography process to form an epitaxial structure 3. Of course, the present disclosure can also use the structure composed of the epitaxial layer 5 and the substrate 1 as what people in the field usually call a "substrate". Here, patterning the epitaxial layer 5 is to pattern the so-called "substrate".

[0095] In step 320 , an oxide layer is formed on the surface of the substrate and the surface of the epitaxial structure.

[0096] like Figure 10 As shown, the present disclosure can form an oxide layer 6 on the surface of the substrate 1 and the epitaxial structure 3 by oxidizing the substrate 1 and the epitaxial structure 3 and controlling the oxidation time. Based on this, the material of the oxide layer 6 can be silicon oxide, etc. The oxide layer 6 can also be deposited, for example, by vapor deposition, etc. Based on this, the oxide layer 6 can be a multi-layer structure and can have reflective properties. The oxide layer 6 is formed on the surface of the epitaxial structure 3, that is, the oxide layer 6 is formed on the upper surface and sidewalls of the epitaxial structure 3.

[0097] In step 330 , a portion of the oxide layer located on the upper surface of the epitaxial structure is removed to form a mask layer having an opening exposing the epitaxial structure. The material of the mask layer is different from that of the epitaxial structure.

[0098] like Figure 10 and Figure 11 As shown, the present disclosure can remove the portion of the oxide layer 6 located on the upper surface of the epitaxial structure 3 by chemical vapor polishing (CMP) to form the mask layer 2 .

[0099] In addition, the light emitting device formed based on the substrate structure of the seventh embodiment of the present disclosure is as follows: Figure 12 shown.

[0100] The above description is merely a preferred embodiment of the present disclosure and does not constitute any form of limitation to the present disclosure. Although the present disclosure has been disclosed as a preferred embodiment as above, it is not intended to limit the present disclosure. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of the technical content disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure are still within the scope of the technical solution of the present disclosure.

Claims

1. A substrate structure for a light emitting device, characterized in that: The substrate structure comprises: substrate (1); A mask layer (2) is provided on the substrate (1), and the mask layer (2) is provided with an opening (201) exposing the substrate (1); An epitaxial structure (3) is provided at the opening (201); the material of the mask layer (2) is different from the material of the epitaxial structure (3); the epitaxial structure (3) extends out of the opening (201), and the surface of the epitaxial structure (3) facing away from the substrate (1) is used for growing a light-emitting structure layer (4).

2. The substrate structure according to claim 1, wherein: The number of the openings (201) and the epitaxial structures (3) are both multiple, the multiple epitaxial structures (3) correspond one-to-one to the multiple openings (201), and the multiple openings (201) and the multiple epitaxial structures (3) are arranged at intervals.

3. The substrate structure according to claim 1, wherein: The material of the substrate (1) or the epitaxial structure (3) is silicon, germanium or a silicon-germanium alloy.

4. The substrate structure according to claim 1, wherein: The substrate (1) is a polarized substrate, and the bias angle of the substrate (1) is 0 o -8 o .

5. The substrate structure according to claim 1, wherein: The mask layer (2) is a reflector.

6. A method for preparing a substrate structure for a light-emitting device, characterized in that: The preparation method comprises: forming a mask layer (2) on a substrate (1), wherein the mask layer (2) is provided with an opening (201) exposing the substrate (1); Using the mask layer (2) as a mask, epitaxial growth is performed on the substrate (1) to form an epitaxial structure (3), wherein the epitaxial structure (3) is provided at the opening (201), and the material of the mask layer (2) is different from the material of the epitaxial structure (3); The epitaxial structure (3) extends out of the opening (201), and the surface of the epitaxial structure (3) facing away from the substrate (1) is used for growing a light-emitting structure layer (4).

7. The method for preparing a substrate structure according to claim 6, wherein: The mask layer (2) is a reflector.

8. A method for preparing a substrate structure for a light-emitting device, characterized in that: The preparation method comprises: forming an epitaxial layer (5) on a substrate (1); Patterning the epitaxial layer (5) to form an epitaxial structure (3), wherein the cross-sectional area of ​​the epitaxial structure (3) in a direction parallel to the substrate (1) is smaller than the area of ​​the substrate (1); forming an oxide layer (6) on the surface of the substrate (1) and the surface of the epitaxial structure (3); removing a portion of the oxide layer (6) located on the upper surface of the epitaxial structure (3) to form a mask layer (2) having an opening (201) exposing the epitaxial structure (3), wherein the material of the mask layer (2) is different from the material of the epitaxial structure (3); The epitaxial structure (3) extends out of the opening (201), and the surface of the epitaxial structure (3) facing away from the substrate (1) is used for growing a light-emitting structure layer (4).

9. A light emitting device, characterized in that: include: The substrate structure according to any one of claims 1 to 5; A light-emitting structure layer (4) is provided on a side of the epitaxial structure (3) facing away from the substrate (1); Wherein, the epitaxial structure (3) extends out of the opening (201).

10. The light emitting device according to claim 9, characterized in that The light-emitting structure layer (4) extends beyond the epitaxial structure (3) in a direction parallel to the substrate (1), and the portion of the light-emitting structure layer (4) extending beyond the epitaxial structure (3) faces the surface of the mask layer (2) and is arranged obliquely to the substrate (1), and the area of ​​the upper surface of the light-emitting structure layer (4) is larger than the area of ​​the lower surface in contact with the epitaxial structure (3).

11. The light emitting device according to claim 10, characterized in that The angle between the surface of the portion of the light emitting structure layer (4) extending out of the epitaxial structure (3) facing the mask layer (2) and the substrate (1) is 20 o -70 o .

12. A method for preparing a light-emitting device, characterized in that: include: The substrate structure is prepared by the method for preparing the substrate structure according to any one of claims 6 to 8; A light-emitting structure layer (4) is epitaxially grown on the epitaxial structure (3) of the substrate structure.

13. The method for preparing a light-emitting device according to claim 12, wherein: The preparation method further comprises: The substrate structure is removed.

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