A semiconductor substrate coating process

Abstract

The invention relates to a semiconductor base coating process, which specifically comprises the following steps: step one: using external cleaning equipment and detection equipment to comprehensively clean impurities from the semiconductor base and detect whether it is qualified; step two: sequentially inverting a number of semiconductor bases that have passed the detection on the coating equipment to perform coating operations; step three: taking the coated semiconductor off the coating equipment; after coating the organic high-temperature glue, a rotating cylinder drives a flip plate to rotate 180 degrees, at which time one end of the flip plate contacts a support seat, and at the same time, iron filings in a material storage tank will be attracted by the magnetism on a heat dissipation base, so that the iron filings are embedded in the organic high-temperature glue and adsorbed on the surface of the heat dissipation base at the same time, one end of the iron filings extends out of the organic high-temperature glue, and the other end thereof contacts the heat dissipation base, thereby increasing the heat dissipation area of ​​the heat dissipation base, and further improving the heat dissipation efficiency of the heat dissipation base for the laser diode.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor bases, and in particular to a semiconductor base coating process. Background Art

[0002] The packaging structure of semiconductor components must take its heat dissipation into special consideration. Taking the packaging structure of laser diodes as an example, a fixing frame is formed above a heat dissipation base. The high temperature generated by the laser diode during operation is dissipated by the heat dissipation base to ensure the normal operation of the laser diode. The existing heat dissipation base and fixing frame of the laser diode are respectively pressed by a punch press and then welded together. As a result, contact thermal resistance is generated between the heat dissipation base and the fixing frame, which reduces the heat dissipation effect, and the welding process is inevitably increased. It is necessary to propose a solution to solve the above technical problems.

[0003] As shown in the patent document with publication number CN2938400Y, the device is manufactured by metal powder metallurgy injection molding to form a packaging base with a fixing frame and a protective frame formed on the top of the heat dissipation base in one piece. The protective frame surrounds the fixing frame and has a working gap. The material of the metal powder is copper, iron, tungsten, molybdenum, aluminum, indium, gallium or its alloy, which can improve the heat dissipation effect and reduce the process. However, the area of ​​the heat dissipation base in the above structure that contacts the external air is small, which makes the heat dissipation efficiency of the laser diode low. Summary of the invention

[0004] The technical problems solved by this solution are:

[0005] (1) How to increase the surface area of ​​the heat sink and improve the heat dissipation efficiency of the laser diode?

[0006] (2) How to solve the problem of accelerating the drying speed of organic high-temperature adhesive and improving the coating efficiency of semiconductor base.

[0007] The purpose of the present invention can be achieved by the following technical solution: A semiconductor base coating process specifically comprises the following steps:

[0008] Step 1: Use external cleaning equipment and testing equipment to comprehensively clean impurities and test whether the semiconductor base is qualified;

[0009] Step 2: several semiconductor substrates that have passed the inspection are sequentially mounted upside down on the coating equipment to perform coating operations;

[0010] Step 3: Remove the coated semiconductor from the coating equipment and store them one by one.

[0011] A further technical improvement of the present invention is that in the above-mentioned step 2, the position of the semiconductor base is conveniently limited by connecting the limiting sleeve in the coating equipment with the mounting frame, thereby preventing shaking when the heat dissipation base is coated with glue.

[0012] A further technical improvement of the present invention is that in the above-mentioned step 2, the heat dissipation base is magnetically connected through the magnet plate in the coating equipment and the limiting sleeve, so as to further limit the position of the semiconductor base and prevent the semiconductor base from detaching from the mounting hole when the flip plate is flipped.

[0013] A further technical improvement of the present invention is that in the above-mentioned step 2, magnetism is transmitted to the heat dissipation base through the magnet plate in the coating equipment, so that when several semiconductor bases are close to iron filings, the heat dissipation base will be full of iron filings, increasing the heat dissipation area of ​​the heat dissipation base, thereby improving the heat dissipation effect of the heat dissipation base.

[0014] A further technical improvement of the present invention is that in the above step 2, the temperature in the protective cover is increased by an air pump in the coating equipment in conjunction with three air outlet pipes and corresponding heating sleeves, thereby accelerating the solidification speed of the glue on the surface of the heat dissipation base.

[0015] A further technical improvement of the present invention is that in the above step 2, the rotation angle of the flip plate is limited by the support seat in the coating equipment to prevent the heat dissipation base from being too close to the iron filings, thereby preventing the side of the heat dissipation base from absorbing excess iron filings.

[0016] A further technical improvement of the present invention is that the coating equipment includes a workbench, a plurality of semiconductor bases are arranged on the top of the workbench, a flipping mechanism for adjusting the position of the semiconductor base is also arranged on the top of the workbench, a drying mechanism for drying glue is arranged on one side of the flipping mechanism, and a gluing tool for brushing glue is movably arranged on the other side of the flipping mechanism, the gluing tool is the prior art, and the glue on the bristles of the gluing tool is organic high-temperature glue.

[0017] A further technical improvement of the present invention is that the flipping mechanism includes a rotating cylinder fixedly mounted on a workbench, a flipping plate is rotatably arranged in front of the rotating cylinder through a bracket, a plurality of mounting holes for placing semiconductor bases are opened on the top surface of the flipping plate, a limiting sleeve for limiting the semiconductor base is fixedly arranged on the inner wall of the mounting hole, the limiting sleeve is made of iron, a magnet plate is fixedly mounted on the bottom of the flipping plate, and a plurality of the limiting sleeves are fixedly connected to the magnet plate.

[0018] A further technical improvement of the present invention is that a material storage trough is fixedly embedded on the top surface of the workbench, the material storage trough is located on the side of the bracket away from the flip plate, and a sufficient amount of iron filings are contained in the material storage trough.

[0019] A further technical improvement of the present invention lies in that a guide plate for guiding iron filings is fixedly arranged between the material storage trough and the bracket; the semiconductor bases that have passed the inspection are manually inverted in the mounting holes on the surface of the flip plate in turn, the mounting frame is limited by a limit sleeve, and the limit sleeve cooperates with the magnetism of the heat dissipation base to prevent the heat dissipation base from shaking, and then the glue coating tool is turned on so that the bristles of the glue coating tool are only coated with organic high-temperature glue on the heat dissipation base. After the organic high-temperature glue is applied, the flip plate is rotated 180 degrees by turning on the rotating cylinder. At this time, one end of the flip plate contacts the support seat, and at the same time, the iron filings in the material storage trough will be attracted by the magnetism on the heat dissipation base, so that the iron filings are embedded in the organic high-temperature glue and adsorbed on the surface of the heat dissipation base. One end of the iron filings extends out of the organic high-temperature glue, and the other end contacts the heat dissipation base, thereby increasing the heat dissipation area of ​​the heat dissipation base, and then improving the heat dissipation efficiency of the heat dissipation base for the laser diode.

[0020] A further technical improvement of the present invention is that the drying mechanism includes a protective cover fixedly installed on the workbench, an air pump is fixedly installed on the top of the protective cover, a plurality of laterally arranged air outlet pipes are fixedly inserted on the side of the protective cover away from the gluing tooling, the output end of the air pump is fixedly connected to a connecting pipe, and the plurality of air outlet pipes are all connected to the connecting pipe.

[0021] A further technical improvement of the present invention lies in that: a heating sleeve is fixedly installed at the output end of the air outlet pipe, and an electric heating tube is fixedly installed on the inner wall of the heating sleeve; by controlling the rotating cylinder to reset 90 degrees, the flip plate and the table top of the workbench are in a mutually perpendicular state, and by turning on the air pump, hot air is blown to several heat dissipation bases on the flip plate through the three air outlet pipes and the heating sleeve. At the same time, the protective cover cooperates with the flip plate to reduce heat loss in the protective cover and increase the temperature in the protective cover, thereby accelerating the solidification speed of the organic high-temperature glue, thereby improving the efficiency of coating the semiconductor base.

[0022] A further technical improvement of the present invention is that the semiconductor base includes a heat dissipation base, the heat dissipation base is made of iron, and a mounting frame for placing the laser diode is fixedly arranged on the top of the heat dissipation base, the semiconductor base is inverted in the mounting hole, and the inner wall size of the limiting sleeve is larger than the size of the mounting frame and smaller than the size of the heat dissipation base.

[0023] A further technical improvement of the present invention is that a support base for supporting the flip plate is fixedly arranged on the workbench below the protective cover.

[0024] A further technical improvement of the present invention is that the bristles of the glue coating tooling only contact the semiconductor base and are spaced a certain distance from the top surface of the flip plate.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] When the present invention is in use, the semiconductor bases that have passed the inspection are manually flipped upside down in the mounting holes on the surface of the flip plate, the mounting frame is limited by the limiting sleeve, and the limiting sleeve cooperates with the magnetism of the heat dissipation base to prevent the heat dissipation base from shaking, and then the glue coating tool is opened so that the bristles of the glue coating tool are only used to coat the heat dissipation base with organic high-temperature glue. After the organic high-temperature glue is coated, the flip plate is rotated 180 degrees by opening the rotating cylinder. At this time, one end of the flip plate is in contact with the support seat. At the same time, the iron filings in the storage trough will be attracted by the magnetism on the heat dissipation base, so that the iron filings are embedded in the organic high-temperature glue and are also adsorbed on the surface of the heat dissipation base. One end of the iron filings extends out of the organic high-temperature glue, and the other end thereof is in contact with the heat dissipation base, thereby increasing the heat dissipation area of ​​the heat dissipation base, and further improving the heat dissipation efficiency of the heat dissipation base for the laser diode.

[0027] When the present invention is in use, the rotating cylinder is controlled to reset 90 degrees. At this time, the flip plate and the table top of the workbench are in a mutually perpendicular state. By turning on the air pump, hot air is blown to a plurality of heat dissipation bases on the flip plate through three air outlet pipes and the heating sleeve. At the same time, the protective cover cooperates with the flip plate to reduce heat loss in the protective cover and increase the temperature in the protective cover, thereby accelerating the solidification speed of the organic high-temperature glue, thereby improving the efficiency of coating the semiconductor base. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to facilitate understanding by those skilled in the art, the present invention is further described below with reference to the accompanying drawings.

[0029] Figure 1 This is a schematic diagram of the overall coating process of the present invention;

[0030] Figure 2 It is a cross-sectional view of the overall structure of the coating device of the present invention;

[0031] Figure 3 This is a cross-sectional view of the flipping mechanism structure of the present invention;

[0032] Figure 4 It is a three-dimensional schematic diagram of the structure of the flip plate of the present invention;

[0033] Figure 5 It is a cross-sectional view of the drying mechanism structure of the present invention;

[0034] Figure 6 It is a structural cross-sectional view of the semiconductor base of the present invention.

[0035] In the figure: 1. Rotating cylinder; 2. Gluing tooling; 3. Workbench; 4. Turning mechanism; 5. Support seat; 6. Drying mechanism; 7. Semiconductor base; 401. Limiting sleeve; 402. Magnet plate; 403. Bracket; 404. Storage trough; 405. Guide plate; 406. Turning plate; 407. Mounting hole; 601. Air pump; 602. Protective cover; 603. Heating sleeve; 604. Exhaust pipe; 605. Connecting pipe; 701. Mounting frame; 702. Heat dissipation base. DETAILED DESCRIPTION

[0036] The technical scheme of the present invention will be described clearly and completely in conjunction with the embodiments below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] See also Figure 1-Figure 6 As shown, a semiconductor substrate coating process specifically includes the following steps:

[0038] Step 1: Use external cleaning equipment and testing equipment to comprehensively clean the semiconductor base 7 for impurities and test whether it is qualified;

[0039] Step 2: several semiconductor substrates 7 that have passed the inspection are sequentially mounted upside down on the coating equipment to perform coating operations;

[0040] Step 3: Remove the coated semiconductor from the coating equipment and store them one by one.

[0041] See also Figure 1-Figure 6As shown, in the above step 2, the position of the semiconductor base 7 is conveniently limited by the limit sleeve 401 in the coating equipment and the mounting frame 701, so as to prevent the heat sink 702 from shaking when applying glue; in the above step 2, the heat sink 702 is magnetically connected by the magnet plate 402 in the coating equipment in conjunction with the limit sleeve 401, so as to further limit the position of the semiconductor base 7 and prevent the semiconductor base 7 from detaching from the mounting hole 407 when the flip plate 406 is flipped; in the above step 2, the magnet plate 402 in the coating equipment transmits magnetism to the heat sink 702, so that several When the semiconductor base 7 is close to the iron filings, the heat sink base 702 will be full of iron filings, increasing the heat dissipation area of ​​the heat sink base 702, thereby improving the heat dissipation effect of the heat sink base 702; in the above-mentioned step 2, the air pump 601 in the coating equipment cooperates with the three air outlet pipes 604 and the corresponding heating sleeve 603 to increase the temperature in the protective cover 602, thereby accelerating the solidification speed of the glue on the surface of the heat sink base 702; in the above-mentioned step 2, the support base 5 in the coating equipment is used to limit the rotation angle of the flip plate 406 to prevent the heat sink base 702 from being too close to the iron filings, and to avoid the side of the heat sink base 702 from absorbing excess iron filings.

[0042] See also Figure 2-Figure 6 As shown, the above-mentioned coating equipment includes a workbench 3, a plurality of semiconductor bases 7 are arranged on the top of the workbench 3, a flipping mechanism 4 for adjusting the position of the semiconductor base 7 is also arranged on the top of the workbench 3, a drying mechanism 6 for drying glue is arranged on one side of the flipping mechanism 4, and a glue coating tool 2 for brushing glue is movably arranged on the other side of the flipping mechanism 4, the glue coating tool 2 is the existing technology, and the glue on the bristles of the glue coating tool 2 is organic high-temperature glue.

[0043] See also Figure 2-Figure 4 As shown, the above-mentioned flipping mechanism 4 includes a rotating cylinder 1 fixedly mounted on the workbench 3, a flipping plate 406 is rotatably arranged in front of the rotating cylinder 1 through a bracket 403, a plurality of mounting holes 407 for placing the semiconductor base 7 are opened on the top surface of the flipping plate 406, a limiting sleeve 401 for limiting the semiconductor base 7 is fixedly arranged on the inner wall of the mounting hole 407, and the limiting sleeve 401 is made of iron, a magnet plate 402 is fixedly mounted on the bottom of the flipping plate 406, and a plurality of limiting sleeves 401 are fixedly connected to the magnet plate 402.

[0044] See also Figure 3 As shown, a material storage trough 404 is fixedly embedded on the top surface of the above-mentioned workbench 3. The material storage trough 404 is located on the side of the bracket 403 away from the flip plate 406, and the interior of the material storage trough 404 is filled with sufficient iron filings.

[0045] See also Figure 3As shown, a guide plate 405 for guiding iron filings is fixedly arranged between the above-mentioned storage tank 404 and the bracket 403; the qualified semiconductor base 7 is manually mounted in the mounting hole 407 on the surface of the flip plate 406 in turn, and the mounting frame 701 is limited by the limiting sleeve 401, and the magnetism of the limiting sleeve 401 on the heat dissipation base 702 is used to prevent the heat dissipation base 702 from shaking, and then the glue coating tool 2 is opened so that the brush hairs of the glue coating tool 2 only coat the heat dissipation base 702 with organic high temperature glue. After the organic high temperature glue is coated, By turning on the rotating cylinder 1, the flip plate 406 rotates 180 degrees. At this time, one end of the flip plate 406 contacts the support seat 5. At the same time, the iron filings in the storage tank 404 will be attracted by the magnetism on the heat dissipation base 702, so that the iron filings are embedded in the organic high-temperature glue and adsorbed on the surface of the heat dissipation base 702. One end of the iron filings extends out of the organic high-temperature glue, and the other end contacts the heat dissipation base 702, thereby increasing the heat dissipation area of ​​the heat dissipation base 702, thereby improving the heat dissipation efficiency of the heat dissipation base 702 for the laser diode.

[0046] See also Figure 2 and Figure 5 As shown, the above-mentioned drying mechanism 6 includes a protective cover 602 fixedly installed on the workbench 3, an air pump 601 is fixedly arranged on the top of the protective cover 602, and a plurality of transversely arranged air outlet pipes 604 are fixedly inserted on the side of the protective cover 602 away from the glue coating tooling 2, and the output end of the air pump 601 is fixedly connected to a connecting pipe 605, and the plurality of air outlet pipes 604 are all connected to the connecting pipe 605.

[0047] See also Figure 5 As shown, a heating sleeve 603 is fixedly installed at the output end of the above-mentioned air outlet pipe 604, and an electric heating tube is fixedly installed on the inner wall of the heating sleeve 603; by controlling the rotating cylinder 1 to reset 90 degrees, the flip plate 406 and the table surface of the workbench 3 are in a mutually perpendicular state, and by turning on the air pump 601, hot air is blown to several heat dissipation bases 702 on the flip plate 406 through the three air outlet pipes 604 and the heating sleeve 603. At the same time, the protective cover 602 cooperates with the flip plate 406 to reduce the heat loss in the protective cover 602 and increase the temperature in the protective cover 602, thereby accelerating the solidification speed of the organic high-temperature glue, thereby improving the efficiency of coating the semiconductor base 7.

[0048] See also Figure 2 and Figure 6 As shown, the semiconductor base 7 includes a heat sink base 702 made of iron, and a mounting frame 701 for placing the laser diode is fixedly arranged on the top of the heat sink base 702. The semiconductor base 7 is inverted in the mounting hole 407, and the inner wall size of the limiting sleeve 401 is larger than the size of the mounting frame 701 and smaller than the size of the heat sink base 702.

[0049] See also Figure 2 As shown, a support base 5 for supporting the flip plate 406 is fixedly arranged on the workbench 3 below the protective cover 602 .

[0050] See also Figure 2 As shown, the bristles of the glue coating tool 2 are only in contact with the semiconductor base 7 and there is a certain distance between the brush and the top surface of the flip plate 406 .

[0051] Working principle: When the present invention is in use, first, the qualified semiconductor base 7 is manually mounted upside down in the mounting hole 407 on the surface of the flip plate 406, and the mounting frame 701 is limited by the limiting sleeve 401. The limiting sleeve 401 cooperates with the magnetism of the heat dissipation base 702 to prevent the heat dissipation base 702 from shaking, and then the glue coating tool 2 is opened so that the bristles of the glue coating tool 2 only apply organic high-temperature glue to the heat dissipation base 702. After the organic high-temperature glue is applied, the rotating cylinder 1 is opened to rotate the flip plate 406 180 degrees. At this time, one end of the flip plate 406 is in contact with the support seat 5. At the same time, the iron filings in the storage tank 404 will be attracted by the magnetism on the heat dissipation base 702, so that the iron filings are embedded in the organic high-temperature glue and adsorbed on the surface of the heat dissipation base 702. One end of the iron filings The organic high-temperature glue is extended, and the other end thereof contacts the heat dissipation base 702, thereby increasing the heat dissipation area of ​​the heat dissipation base 702, and further improving the heat dissipation efficiency of the heat dissipation base 702 for the laser diode; by controlling the rotating cylinder 1 to reset 90 degrees, at this time, the flip plate 406 and the table surface of the workbench 3 are in a mutually perpendicular state, by turning on the air pump 601, three air outlet pipes 604 cooperate with the heating sleeve 603 to blow hot air to several heat dissipation bases 702 on the flip plate 406, and at the same time, the protective cover 602 cooperates with the flip plate 406 to reduce the heat loss in the protective cover 602 and increase the temperature in the protective cover 602, thereby accelerating the solidification speed of the organic high-temperature glue, and further improving the efficiency of coating the semiconductor base 7; and then controlling the rotating cylinder 1 to reset to its original position, so as to facilitate the removal of the coated semiconductor base 7 in sequence.

[0052] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation mode, structure, characteristics and effects of the present invention are described in detail below in combination with the accompanying drawings and preferred embodiments.

[0053] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technical personnel in this field can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A semiconductor substrate coating process, characterized in that: The specific steps include: Step 1: Using external cleaning equipment and testing equipment to comprehensively clean the semiconductor base (7) for impurities and test whether it is qualified; Step 2: a plurality of semiconductor substrates (7) that have passed the inspection are sequentially mounted upside down on a coating device to perform a coating operation; Step 3: Remove the coated semiconductor from the coating equipment and store it in sequence; The specific coating operation in step 2 is: The qualified semiconductor bases (7) are manually mounted upside down in the mounting holes (407) on the surface of the flip plate (406) in sequence, and the mounting frame (701) is limited by the limiting sleeve (401). The limiting sleeve (401) cooperates with the magnetism of the heat dissipation base (702) to prevent the heat dissipation base (702) from shaking. Then, the glue coating tool (2) is opened so that the brush hairs of the glue coating tool (2) only apply the organic high temperature glue to the heat dissipation base (702). After the organic high temperature glue is applied, the rotating cylinder (1) is opened to rotate the flip plate (406) 180 degrees. At this time, one end of the flip plate (406) contacts the support seat (5). At the same time, the iron filings in the storage tank (404) are attracted by the magnetism on the heat dissipation base (702), so that the iron filings are embedded in the organic high temperature glue and adsorbed on the surface of the heat dissipation base (702). One end of the iron filings extends out of the organic high temperature glue. , and the other end thereof contacts the heat dissipation base (702), thereby increasing the heat dissipation area of ​​the heat dissipation base (702), thereby improving the heat dissipation efficiency of the heat dissipation base (702) for the laser diode; by controlling the rotating cylinder (1) to reset 90 degrees, at this time, the flip plate (406) and the table surface of the workbench (3) are in a mutually perpendicular state, by turning on the air pump (601), three air outlet pipes (604) cooperate with the heating sleeve (603) to blow hot air to a plurality of heat dissipation bases (702) on the flip plate (406), and at the same time, the protective cover (602) cooperates with the flip plate (406) to reduce the heat loss in the protective cover (602), increase the temperature in the protective cover (602), thereby accelerating the solidification speed of the organic high temperature glue, thereby improving the efficiency of coating the semiconductor base (7); and then controlling the rotating cylinder (1) to reset to the original position, so as to facilitate the sequential removal of the coated semiconductor bases (7).

2. A semiconductor substrate coating process according to claim 1, characterized in that: In the above-mentioned step 2, the limiting sleeve (401) in the coating device is sleeved with the mounting frame (701), and the inner wall size of the limiting sleeve (401) is larger than the size of the mounting frame (701) and smaller than the size of the heat dissipation base (702).

3. A semiconductor substrate coating process according to claim 1, characterized in that: In the above-mentioned step 2, the magnet plate (402) in the coating device cooperates with the limiting sleeve (401) to be magnetically connected to the heat dissipation base (702).

4. A semiconductor substrate coating process according to claim 1, characterized in that: In the above-mentioned step 2, the glue on the bristles of the glue coating tool (2) in the coating equipment is an organic high-temperature glue, and there is a distance between the bristles of the glue coating tool (2) and the top surface of the flip plate (406).

5. A semiconductor substrate coating process according to claim 1, characterized in that: In the above-mentioned step 2, the output ends of the three air outlet pipes (604) in the coating device are all provided with heating sleeves (603).

6. A semiconductor substrate coating process according to claim 1, characterized in that: In the above-mentioned step 2, a support base (5) for supporting the flip plate (406) is fixedly arranged on the workbench (3) below the protective cover (602) in the coating equipment.

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