A compound containing a polyfunctional silsesquioxane structure and use thereof

Abstract

This invention belongs to the field of photoresist technology, specifically relating to a compound containing a multifunctional polysiloxane structure and its applications. The structural formula is selected from general formula I or general formula II. Based on an organosiloxane polymer, this invention introduces multifunctional reactive functional groups into the polymer structure through transesterification and free radical addition reactions. The hydrophilic / hydrophobic properties, temperature resistance, and chemical resistance can be improved by adjusting the types of monomers introduced. This compound is used to prepare a photoresist composition with a solvent, a monomer with ethylene unsaturated bonds, a photosensitizer, and other additives. This photoresist exhibits advantages such as low dielectric constant, good adhesion, high residual film rate, good UV transmittance, good patterning, and good chemical resistance.

Description

Technical Field

[0001] This invention relates to a compound containing a polysiloxane structure with multiple functional groups and its applications, belonging to the field of photoresist technology. Background Technology

[0002] Thin-film transistor liquid crystal displays (LCDs) are a type of liquid crystal display that uses thin-film transistor technology to improve image quality. Their structure mainly consists of three parts: a color filter (CF) substrate, liquid crystal, and a thin-film transistor (TFT) substrate. LCDs have high-speed response characteristics and can utilize a large number of pixels, thus making a significant contribution to achieving high-quality, large-format, and color display capabilities comparable to cathode ray tube (CRT) displays.

[0003] Low-dielectric-constant organic insulating films are crucial for reducing parasitic capacitance between pixel electrodes and wiring. However, low-dielectric-constant materials also need to meet the thermal stability, mechanical properties, and chemical properties required for insulating film materials. When organic insulating films are formed using photoresist compositions containing conventional binder resins, they not only fail to exhibit sufficiently low dielectric constants but also exhibit poor adhesion to metals, resulting in low residual film yield after development and poor pattern flatness. Therefore, a suitable adhesive for organic insulating films is needed. Summary of the Invention

[0004] To address the aforementioned deficiencies in the prior art, this invention provides a compound containing a polysiloxane structure with multiple functional groups and its applications.

[0005] The technical solution of the present invention to solve the above-mentioned technical problems is as follows:

[0006] One objective of this invention is to provide a compound containing a polyfunctional polysiloxane structure, the structural formula of which is selected from the following general formula I or general formula II:

[0007]

[0008] In the above general formula I, R2 and R3 are each independently selected from one or two of the following: straight-chain alkyl or branched-chain alkyl, alkenyl derivative, cycloalkyl or aromatic hydrocarbon derivative; R4 is a methyl or hydrogen atom; and R6 is one or two of the following: methyl, ethyl, propyl, isopropyl, butyl, isobutyl or acrylate group with R4 group.

[0009] n is an integer from 1 to 20;

[0010]

[0011] In the above general formula II, R2 and R3 are each independently selected from one or two of the following: C1-C20 straight-chain alkyl or branched-chain alkyl, alkenyl derivatives, cycloalkyl or aromatic hydrocarbon derivatives; R4 is methyl or hydrogen atom; R6 is one or two of the following: methyl, ethyl, propyl, isopropyl, butyl, isobutyl or acrylate group with R4 group; R5 and R7 are each independently selected from one of the following: hydrogen atom, C1-C20 straight-chain alkyl or branched-chain alkyl, alkenyl derivatives, cycloalkyl, aromatic hydrocarbon derivatives, epoxy or polyhydroxy group derivatives;

[0012] n is an integer from 1 to 20;

[0013] The structure of general formula I above is obtained through the following reaction equation I:

[0014]

[0015] In the above reaction equation I, R1 is selected from one or two of methyl, ethyl, propyl, isopropyl, butyl, or isobutyl; R2 and R3 are each independently selected from one or two of C1-C20 straight-chain alkyl or branched-chain alkyl, alkenyl derivative, cycloalkyl, or aromatic hydrocarbon derivative; R4 is a methyl or hydrogen atom; R5 is a methyl or hydrogen atom; the type of R6 mainly depends on the value of x. When x = 1, R6 is the same group as R1. When x = 4, R6 is a substituted acrylate group. When x = 2 or 3, R6 is one or two of R1 and / or acrylate groups.

[0016] Taking x = 2 as an example, the following reaction equation II yields the structure of general formula II: R

[0017]

[0018] In the above reaction equation II, a, b, and c are the molar ratios of each monomer, and y = x; R5 and R7 are each independently selected from one of the following: hydrogen atom, C1-C20 straight-chain alkyl or branched-chain alkyl, alkenyl derivative, cycloalkyl, aromatic hydrocarbon derivative, epoxy or polyhydroxy group derivative.

[0019] Based on the above technical solution, the present invention can also be improved as follows:

[0020] Furthermore, the reaction temperature of reaction equation I is 30-150℃, preferably 40-120℃, more preferably 50-100℃, and the reaction time is 1-24h, preferably 3-12h, more preferably 5-8h.

[0021] Furthermore, the average molecular weight of the product in reaction equation I is 200 to 20,000, the dispersity (Mw / Mn) is 1.0-5.0, preferably the molecular weight range is 500-15,000, the dispersity (Mw / Mn) is 1.0-4.5, and more preferably the dispersity (Mw / Mn) is 1.0-3.0.

[0022] Furthermore, the solvent used in reaction equation I can be a protic organic solvent such as alcohols, or one or more aprotic organic solvents such as N,N-dimethylformamide, N,N-diethylformamide, N-methylpyrrolidone, N-pyrrolidone, tetrahydrofuran, ethyl acetoacetate, diethylene glycol dimethyl ether, methyl methoxypropyl propyl ester, ethylene glycol dimethyl ether, propylene glycol dimethyl ether, methyl acrylate, propyl acrylate, methylcellulose, ethylcellulose, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, methyl isobutyl ketone, cyclohexanone, dimethoxyformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, γ-butadiene, glyphosate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monomethyl ether, etc.

[0023] Furthermore, the reaction temperature of reaction equation II is 20-120℃, preferably 30-100℃, more preferably 50-90℃, and the reaction time is 2-24h, preferably 3-12h, more preferably 4-8h.

[0024] Furthermore, the average molecular weight of the product in reaction equation II is 2000-500000, the dispersity is 1.0-4.0, and the acidity is 30-150 KOH mg / g; preferably, the molecular weight range is 2500-350000, the dispersity is 1.2-3.5, and the acidity is 50-140 KOH mg / g; more preferably, the molecular weight range is 3500-200000, the dispersity is 1.6-3.0, and the acidity is 70-130 KOH mg / g.

[0025] Furthermore, in reaction equation II, the ratio of product resin a:b:c is represented as 1:(44.5-99):(44.5-99).

[0026] A second objective of this invention is to provide a photoresist composition prepared using a compound containing a multifunctional polysiloxane structure as described above, along with a solvent, a monomer having ethylene unsaturated bonds, a photosensitizer, and additives. The preparation process is as follows:

[0027] After mixing all raw materials, propylene glycol methyl ether is dissolved in the raw material mixture to make the solid concentration 15-18%. The mixture is stirred at room temperature and then filtered through a 0.2 μm microporous filter to prepare the photoresist composition.

[0028] Furthermore, the compound containing the polyfunctional polysiloxane structure accounts for 5-30% of the total weight of the composition;

[0029] The solvent accounts for 30-80% of the total weight of the composition;

[0030] The monomer having ethylene unsaturated bonds accounts for 5%-35% of the total weight of the composition;

[0031] The photosensitizer accounts for 0.5%-10% of the total weight of the composition.

[0032] Furthermore, the solvent is selected from one or more of diethylene glycol dimethyl ether, ethylene glycol dimethyl ether, propylene glycol dimethyl ether, methyl acrylate, propyl acrylate, methylcellulose, ethylcellulose, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, methyl isobutyl ketone, cyclohexanone, dimethoxyformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, γ-butadiene, glyphosate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and dipropylene glycol monomethyl ether.

[0033] The solvent added to the photoresist composition of the present invention mainly serves to dissolve compounds containing polyfunctional polysiloxane structures, monomers with ethylene unsaturated bonds, photosensitizers, and other additives, thereby reducing the viscosity of the system.

[0034] Furthermore, the monomers with ethylene unsaturated bonds undergo a crosslinking reaction with the host resin under the action of a photosensitizer. The monomers with ethylene unsaturated bonds are selected from methacrylates, ethyl (meth)acrylates, butyl (meth)acrylates, ethylene glycol di(meth)acrylates, polyethylene glycol (meth)acrylates, trimethylpropane di(meth)acrylates, trimethylpropane tri(meth)acrylates, pentadienyl acrylates, dipentanetetraethylene hexaacrylate, pentylene tetrahydroacrylate; ethylene glycol phthalate, ethylene glycol (meth)acrylate, α,β-unsaturated carboxylic acid esters, bisphenol A dipropylene glycol ether acrylate, β- Phthalate of hydroxyethyl (meth)acrylate, toluene diisocyanate of β-hydroxyethyl (meth)acrylate, polyisocyanate, dimethylpropane tetraacrylate, melamine (2-oxyethyl acrylate) isocyanate, ethylene oxide phthalate, ethylene glycol phthalate, propylene glycol propylene oxide, ethylene oxide trimethylpropane melamine, ethylene glycol phthalate, propylene glycol triacrylate, trimethylolpropane melamine, ethylene glycol phthalate, propylene glycol triacrylate, styrene derivatives, or one or more of these.

[0035] Furthermore, the photosensitizer uses a colorless or light-colored photosensitive agent to improve the transparency of the resin. The photosensitizer is selected from benzophenone, 1-hydroxy-1-phenylcyclohexane, benzyl dimethyl ketone, 1-benzyl-1-dimethylamino-1-(4-pentadienyl-phenyl ketone)propane, 2-pentadien-2-(4-methyl methacrylate)phenylpropane, 1-chloro-4-propoxyphenylacetone, isopropoxyphenylacetone, diethoxyphenylacetone, ethoxyphenylacetone, 4-phenyl-4-methyldiphenylsulfonamide, phenyl butyl ether, 2-hydroxy-2-phenylpropane, ethyl 2-hydroxy-2-(4-isopropyl)benzoate, 4-butylbenzene chloroform, 4-phenoxybenzene dichloromethane, ethyl benzoate, 1,7-BIS(9-acrylate)hexane, and 9-n-butyl-3,6-bis(2-morpholinoisobutylthiol)carbazole. One or more of the following: diphenyl(2,4,6-trimethylbenzoyl)phosphonate, 10-butyl-2-chloramine, 4,4'-BIS(diethylamino)benzophenone, 2-[2-(4-methoxy-benzene)-ethylene]-4,6-BIS-trichloromethyl-[1,3,5]triazine, 2-(4-methyl-naphthyl-1-h)-4,6-trichloromethyl[1,3,5]trichloromethane, 2-benzo[1,3]dioxacyclopenten-5-yl-4,6-trichloromethyl[1,3,5]trichloromethane, 2-methyl-4,6-di(trichloromethyl)-s-triazine, 2-benzene-4,6-di(trichloromethyl)-s-triazine, and 2-naphthyl-4,6-di(trichloromethyl)-s-triazine.

[0036] Generally, photosensors using bridging reactions with acrylic-based multifunctional monomers are designed for use with ultraviolet (UV) wavelengths. Mercury lamps, the most widely used UV wavelength, have wavelengths in the 310–420 nm range. Therefore, photosensors that generate free radicals within this wavelength range can be used. High transparency can be achieved by using photosensors that have appropriate sensitivity within the wavelength band used during exposure and are themselves colorless.

[0037] When the siloxane polymer compound contains 0.001%-0.1% epoxy or amine groups, its reactivity can increase the crosslinking density of the photoresist, further improving the adhesion between the photoresist composition and the ITO electrode. The monomer used can be one or more of the following silicon-based compounds: trimethoxysilane, methyldimethoxysilane, N-(2-aminoethyl)-3-aminopropyldimethoxysilane, dimethoxysilane, 3,4-epoxybutyltrimethoxysilane, 2-(3,4-epoxyethylene)ethyltrimethoxysilane, (3-aminopropyl)trimethylsilane, (N,N-diethyl-3-aminopropyl)trimethylsilane, trimethylsilane, and N-β(aminoethyl)γ-aminopropyltrimethoxysilane.

[0038] Furthermore, in the photoresist composition of the present invention, the additives are, as needed, one or a combination of two or more of the following: photopolymerizers, thermal polymerization inhibitors, defoamers, and leveling agents.

[0039] The beneficial effects of this invention are as follows: The compound containing a multifunctional polysiloxane structure of this invention, based on an organosiloxane polymer, introduces multifunctional reactive functional groups into the polymer structure through transesterification and free radical addition reactions. Its hydrophilicity / phobicity, temperature resistance, and chemical resistance can be improved by adjusting the type of monomer introduced. This compound, after being combined with a solvent, a monomer with ethylene unsaturated bonds, a photosensitizer, and other additives to prepare a photoresist composition, forms an organic insulating film after spin coating, pre-baking, exposure, development, and post-baking. This organic insulating film has advantages such as high yield, low manufacturing cost, good light transmittance, high flatness, excellent pattern stability, low dielectric constant, and good adhesion to the substrate layer. Detailed Implementation

[0040] The principles and features of the present invention are described below with reference to examples. The examples are only used to explain the present invention and are not intended to limit the scope of the present invention.

[0041] Example 1

[0042] 39.66 g of phenyltrimethoxysilane (Mr = 198.29, 0.2 mol) and 27.24 g of methyltrimethoxysilane (Mr = 136.22, 0.2 mol) were added to a three-necked flask, followed by 100 g of N-methyl-2-pyrrolidone. 0.05% by weight of p-toluenesulfonic acid was added as a catalyst. The mixture was heated to 80 °C and reacted for 2 h. Then, the reaction was carried out under vacuum for another 2 h. The dimethyl ether byproduct produced was removed to promote the reaction. Vacuuming was stopped, and 2.7 g of methyl methacrylate (Mr = 100.12, 0.027 mol) was added. The reaction was continued at this temperature for another 2 h, followed by vacuuming for 3 h. The reaction was then stopped. GPC analysis showed that the average molecular weight (Mn) of the obtained siloxane polymer product was 4680, and the molecular weight distribution (Mw / Mn) was 1.8.

[0043] The reaction equation is as follows:

[0044]

[0045] 3.45 g of benzyl methacrylate (Mr = 172.61, 20 mmol) and 1.72 g of methacrylic acid (Mr = 86.09, 20 mmol) were added to 50 g of propylene glycol methyl ether acetate. The mixture was then injected into a flask equipped with a cooler and a stirrer. 0.5% by weight of 2,2'-azobis(2,4-dimethylpentanonitrile) was added to the reaction system, and the reaction temperature was raised to 55 °C. After reacting for 2 h, 46.80 g (Mr = 4680, 10 mmol) of the above siloxane polymer was dissolved in 100 g of propylene glycol methyl ether acetate and added to the acrylate polymer reaction system. The temperature was maintained, and the reaction continued for 3 h. 100 ppm of dodecathiol was added to the reaction system to terminate the polymerization reaction, yielding the polymer. The flask temperature was cooled to 20°C to obtain an acrylic copolymer. The average molecular weight (Mw) of the acrylate polymer containing a polyfunctional polysiloxane structure obtained in this embodiment was 9900, the Mw / Mn ratio was 2.8, and the acid value was 100 mg KOH / g.

[0046] The reaction equation is as follows:

[0047]

[0048] Example 2

[0049] 39.66 g of phenyltrimethoxysilane (Mr = 198.29, 0.2 mol) and 35.66 g of methyltriethoxysilane (Mr = 178.3, 0.2 mol) were added to a three-necked flask, followed by 100 g of N-methylpyrrolidone. Oxalic acid (0.1% by weight of the total reaction system) was added as a catalyst, and the mixture was heated to 50 °C. After reacting for 1 h, the reaction was carried out under vacuum for 1 h. The dimethyl ether byproduct generated during the reaction was removed to promote the reaction. The vacuum was then stopped, and 9.64 g of methacrylic acid (Mr = 86.09, 0.112 mol) was added. The reaction was continued at this temperature for 2 h, followed by a vacuum reaction for 3 h. The reaction was then stopped. GPC analysis showed that the average molecular weight (Mn) of the obtained siloxane polymer product was 2340, and the molecular weight distribution (Mw / Mn) was 2.2.

[0050] 4.64 g of 2-hydroxyethyl acrylate (Mr = 116.12, 40 mmol) and 1.72 g of methacrylic acid (Mr = 86.09, 20 mmol) were added to 50 g of propylene glycol methyl ether acetate. The mixture was then injected into a flask equipped with a cooler and a stirrer. 0.5% by weight of 2,2'-azobis(2,4-dimethylbutyronitrile) was added to the reaction system, and the reaction temperature was raised to 85 °C. After reacting for 2 h, 23.4 g (Mr = 2340, approximately 10 mmol) of the above siloxane polymer was dissolved in 100 g of propylene glycol methyl ether acetate and added to the acrylate polymer reaction system. The temperature was maintained, and the reaction continued for 6 h. 100 ppm of phosphate was added to the reaction system to terminate the polymerization reaction, yielding the polymer. The flask temperature was cooled to 20°C to obtain an acrylic copolymer. The average molecular weight (Mw) of the acrylic polymer containing a polyfunctional polysiloxane structure obtained in this embodiment was 12300, the Mw / Mn ratio was 2.5, and the acid value was 120 mg KOH / g.

[0051] Example 3

[0052] 39.66 g of phenyltrimethoxysilane (Mr = 198.29, 0.2 mol) and 35.66 g of methyltriethoxysilane (Mr = 178.3, 0.2 mol) were added to a three-necked flask, followed by 100 g of N-methylpyrrolidone. Aluminum isopropoxide (0.3% by weight of the total reaction system) was added as a catalyst. The mixture was heated to 40 °C and reacted for 10 h. The reaction was then carried out under vacuum for 2 h. The dimethyl ether byproduct produced was removed to promote the reaction. Vacuuming was stopped, and 9.64 g of methacrylic acid (Mr = 86.09, 0.112 mol) was added. The reaction was continued at this temperature for 3 h, followed by vacuuming for 5 h. The reaction was then stopped. GPC analysis showed that the average molecular weight (Mn) of the siloxane-containing acrylate polymer product was 2430, and the molecular weight distribution (Mw / Mn) was 2.1.

[0053] 24.3 g (Mr = 2430, 10 mmol) of the obtained siloxane-containing acrylate polymer was dissolved in 100 g of polyethylene terephthalate. 45.92 g of styrene (Mr = 104.15), 47.82 g of 2-hydroxyethyl acrylate (Mr = 116.12), and 25.3 g of acrylic acid (Mr = 72.06) were added. 0.25% by weight of 2,2'-azobis(2,4-dimethylbutyronitrile) was added to the above reaction mixture. The reaction temperature was raised to 80 °C, and after reacting for 12 h, the flask temperature was cooled to 20 °C to obtain the siloxane-containing acrylate copolymer. The average molecular weight (Mw) of the acrylate polymer containing the polyfunctional polysiloxane structure obtained in this embodiment was 143000, the Mw / Mn ratio was 2.5, and the acid value was 97 mg KOH / g.

[0054] Example 4

[0055] 59.49 g of phenyltrimethoxysilane (Mr = 198.29, 0.3 mol) and 17.83 g of methyltriethoxysilane (Mr = 178.3, 0.1 mol) were added to a three-necked flask, followed by 100 g of N-methylpyrrolidone. Benzenesulfonic acid (0.2% by weight of the total reaction system) was added as a catalyst. The mixture was heated to 80 °C and reacted for 2 h. Then, the reaction was carried out under vacuum for 2 h. The dimethyl ether byproduct produced during the reaction was removed to promote the reaction. Vacuuming was stopped, and 9.64 g of methacrylic acid (Mr = 86.09, 0.112 mol) was added. The reaction was continued at this temperature for 2 h, followed by vacuuming for 3 h. The reaction was then stopped. GPC analysis showed that the average molecular weight (Mn) of the siloxane-containing acrylate polymer product was 2510, and the molecular weight distribution (Mw / Mn) was 1.9.

[0056] 25.1 g (Mr = 2510, 10 mmol) of the obtained siloxane-containing acrylate polymer was dissolved in 100 g of N-methylpyrrolidone, and 10.4 g of styrene (Mr = 104.15), 11.6 g of 2-hydroxyethyl acrylate (Mr = 116.12), and 2.53 g of acrylic acid (Mr = 72.06) were added. 0.25% by weight of 2,2'-azobis(2,4-dimethylpentanonitrile) was added to the above reaction mixture. The reaction temperature was raised to 80 °C, and after reacting for 12 h, the flask temperature was cooled to 20 °C to obtain the siloxane-containing acrylate copolymer. At this time, the average molecular weight (Mw) of the acrylate polymer containing the polyfunctional polysiloxane structure of this embodiment was 5500, the Mw / Mn ratio was 2.3, and the acid value was 105 mg KOH / g.

[0057] Comparative Example 1

[0058] 45.92g of styrene (Mr = 104.15), 47.82g of 2-hydroxyethyl acrylate (Mr = 116.12), and 25.3g of acrylic acid (Mr = 72.06) were added to 100g of polyethylene terephthalate. 0.25% by weight of 2,2'-azobis(2,4-dimethylbutyronitrile) was added to the above reaction mixture. The reaction temperature was raised to 80℃, and after reacting for 12 hours, the flask temperature was cooled to 20℃ to obtain an acrylic copolymer. The average molecular weight (Mw) of the acrylic polymer in Comparative Example 1 in the obtained polymer solution was 100,000, the Mw / Mn ratio was 2.3, and the acid value was 107 mg KOH / g.

[0059] Comparative Example 2

[0060] 10.4 g of styrene (Mr = 104.15), 11.6 g of 2-hydroxyethyl acrylate (Mr = 116.12), and 2.53 g of acrylic acid (Mr = 72.06) were added to 100 g of N-methylpyrrolidone. 0.25% by weight of 2,2'-azobis(2,4-dimethylpentanonitrile) was added to the above reaction mixture. The reaction temperature was raised to 80 °C, and after reacting for 12 h, the flask temperature was cooled to 20 °C to obtain an acrylic copolymer. The average molecular weight (Mw) of the acrylic polymer in Comparative Example 2 in the obtained polymer solution was 3500, the Mw / Mn ratio was 2.1, and the acid value was 115 mg KOH / g.

[0061] Preparation of organic insulating film photoresist composition

[0062] Under dark conditions, in a reactor, 7% by mass of the acrylic copolymer containing siloxane obtained in the above examples or the acrylic copolymer product without siloxane in the comparative examples, was mixed with 1% of the photosensitizer Irgacure-907, 0.5% of the photosensitizer Irgacure-369, 6% of the crosslinking monomer dipentanetetraethylene hexaacrylate, and 0.05% of siloxane-propoxyane-propoxyane. Propylene glycol methyl ether was dissolved in the above mixture to make the solid concentration 17%. The mixture was stirred at room temperature and then filtered through a 0.2 μm microporous filter to prepare a photoresist composition for forming an organic insulating film of a high porosity liquid crystal display element with a viscosity of about 4-7 cps.

[0063] in,

[0064] Photosensitive agent Irgacure-907: Irgacure 907 (product of Ciba Specialty Chemicals)

[0065] Photosensitive agent Irgacure-369: Irgacure 369 (product of Ciba Specialty Chemicals)

[0066] Leveling agent: A silicone-based leveling agent (BYK product) is used, which is a siloxane-ethoxyane surface compound that increases the adhesion between the substrate and the coating.

[0067] In the above application examples and comparative examples, the performance of the organic insulating film photoresist composition was evaluated according to the standards on substrates such as silicon wafers or glass plates, and the results are shown in Table 1 below.

[0068] (1) Determining the dielectric constant

[0069] Photoresist is coated onto a substrate forming aluminum electrodes using a spin coater, and a dielectric constant measurement unit is fabricated. The dielectric constant is then determined using an impedance matching device.

[0070] (2) Adhesion between metals and inorganic materials

[0071] The photoresist composition was applied to the substrate using a spin coater at 250 rpm for 30 seconds, followed by pre-baking at 90°C for 1 minute, exposure at 90 mJ, and then post-baking at 220°C for 60 minutes to form a photoresist film. The film was then placed in an automated autoclave and fermented at 100°C for 1 hour. The fermented sample was scraped with a beveled blade to expose the substrate, then taped and removed. If more than 80 out of 100 cells remained attached to the substrate, the sample was considered "good"; otherwise, it was considered "bad".

[0072] (3) UV transmittance

[0073] The photoresist composition was coated on the substrate at 250 rpm for 30 seconds using a spin coater, pre-baked at 90°C for 1 minute, developed in TMAH developer for 50 seconds, rinsed with pure water for 60 seconds, dried with compressed air, and then post-baked at 220°C for 60 minutes to form a photoresist film of approximately 3.0 to 3.5 micrometers. The transmittance of the 400nm region was measured by UV.

[0074] (4)Residual film rate

[0075] The photoresist composition was spin-coated onto a substrate, and the thickness ratio (%) of the film formed after pre-baking and after solvent removal during post-baking was measured.

[0076] (5) Pattern formation

[0077] The silicon wafer forming the photoresist pattern is cut perpendicular to the hole pattern, and the results are observed using an electron microscope from the cross-sectional direction of the pattern. A pattern with sidewalls at an angle of 80 degrees or more relative to the substrate, where no film reduction occurs, is considered "good"; a reduction in film is defined as "film reduction".

[0078] (6) Chemical resistance

[0079] After the photoresist composition is coated onto the substrate using a spin coater, the resulting photoresist film, formed through pre-baking, exposure, and post-baking processes, is immersed in a stripper and etching solution at 40°C for 10 minutes. The transmittance and thickness of the photoresist film are then observed for changes. If there is no change in transmittance and thickness, it is considered "good"; if there is a change in transmittance and thickness, it is considered "bad".

[0080] Table 1 Performance data of Examples 1-4 and Comparative Examples 1-2

[0081]

[0082] The data results above show that the photoresist composition prepared using the compound containing the multifunctional polysiloxane structure of the present invention has the characteristics of low dielectric constant, good adhesion, high residual film rate, and good UV transmittance, pattern formation, and chemical resistance. Therefore, the preparation of organic insulating films for high aperture ratio liquid crystal display devices can effectively improve adhesion to metals, increase residual film rate, and result in good pattern flatness.

[0083] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A photoresist composition, characterized in that, It is prepared using compounds containing polyfunctional polysiloxane structures, solvents, monomers with ethylene unsaturated bonds, photosensitizers, and additives; The structural formula of the compound containing the multifunctional polysiloxane structure is selected from the following general formula II: General Formula II; In the above general formula II, R2 and R3 are each independently selected from one or two of C1-C20 straight-chain alkyl or branched-chain alkyl and aromatic hydrocarbon derivatives; R4 is methyl or hydrogen atom; R6 is one or two of methyl, ethyl, propyl or butyl; R5 and R7 are each independently selected from one of hydrogen atom, C1-C20 straight-chain alkyl or branched-chain alkyl and aromatic hydrocarbon derivatives. n is an integer from 10 to 20; a:b:c=1:44.5-99:44.5-99; The compound containing a polyfunctional polysiloxane structure accounts for 5-30% of the total weight of the composition; The solvent accounts for 30-80% of the total weight of the composition; The monomer having ethylene unsaturated bonds accounts for 5%-35% of the total weight of the composition; The photosensitizer accounts for 0.5%-10% of the total weight of the composition.

2. The photoresist composition according to claim 1, characterized in that, The solvent is selected from one or more of the following: diethylene glycol dimethyl ether, ethylene glycol dimethyl ether, propylene glycol dimethyl ether, methyl acrylate, propyl acrylate, methylcellulose, ethylcellulose, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, methyl isobutyl ketone, cyclohexanone, dimethoxyformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, γ-butadiene, glyphosate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and dipropylene glycol monomethyl ether.

3. The photoresist composition according to claim 1, characterized in that, The monomers having ethylene unsaturated bonds are selected from methacrylates, ethyl (meth)acrylates, butyl (meth)acrylates, ethylene glycol di(meth)acrylates, polyethylene glycol (meth)acrylates, trimethylpropane di(meth)acrylates, trimethylpropane tri(meth)acrylates, pentadienyl acrylates, dipentanetetraethylene hexaacrylates, pentylene tetrahydroacrylates; ethylene glycol phthalate, ethylene glycol (meth) phthalate, α,β-unsaturated carboxylic acid esters, bisphenol A dipropylene glycol... Phthalate esters of alcohol ether acrylates, phthalates of β-hydroxyethyl (meth) acrylates, toluene diisocyanate of β-hydroxyethyl (meth) acrylates, polyisocyanates, dimethylpropane tetraacrylate, melamine (2-oxyethyl acrylate) isocyanate, ethylene oxide phthalate, ethylene glycol phthalate, ethylene oxide trimethylpropane melamine, ethylene glycol phthalate, propylene glycol phthalate, trimethylolpropane triacrylate, and one or more of styrene derivatives.

4. The photoresist composition according to claim 1, characterized in that, The photosensitizer is selected from benzophenone, 1-hydroxy-1-phenylcyclohexane, benzyl dimethyl ketone, 1-benzyl-1-dimethylamino-1-(4-pentadienylphenyl ketone)propane, 2-pentadien-2-(4-methyl methacrylate)phenylpropane, 1-chloro-4-propoxyphenylacetone, isopropoxyphenylacetone, diethoxyphenylacetone, ethoxyphenylacetone, 4-phenyl-4-methyldiphenylsulfonamide, phenyl butyl ether, 2-hydroxy-2-phenylpropane, ethyl 2-hydroxy-2-(4-isopropyl)benzoate, 4-butylbenzene chloroform, 4-phenoxybenzene dichloromethane, ethyl benzoate, 1,7-BIS(9-acrylate)hexane, 9-n-butyl-3-ethylhexane, and 1-hydroxy-2-phenylpropane. One or more of the following: 6-bis(2-morpholinoisobutylthiol)carbazole, diphenyl(2,4,6-trimethylbenzoyl)phosphonate, 10-butyl-2-ketamine, 4,4'-BIS(diethylamino)benzophenone, 2-[2-(4-methoxy-benzene)-ethylene]-4,6-BIS-trichloromethyl-[1,3,5]triazine, 2-benzo[1,3]dioxacyclopenten-5-yl-4,6-trichloromethyl[1,3,5]trichloromethane, 2-methyl-4,6-bis(trichloromethyl)-s-triazine, 2-benzene-4,6-bis(trichloromethyl)-s-triazine, and 2-naphthyl-4,6-bis(trichloromethyl)-s-triazine.

5. The photoresist composition according to claim 1, characterized in that, The additive is one or a combination of two or more of the following: photopolymerizer, thermal polymerization inhibitor, defoamer, and leveling agent.

6. The photoresist composition according to any one of claims 1-5, characterized in that, Its preparation process is as follows: After mixing all the raw materials, propylene glycol methyl ether is dissolved in the raw material mixture to make the solid concentration 15-18%. The mixture is stirred at room temperature and then filtered through a microporous filter to prepare a photoresist composition.

7. The photoresist composition according to claim 6, characterized in that, The pore size of the microporous filter is 0.2 μm.

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