Aluminum-silicon target material, method for manufacturing the same, and use thereof

Abstract

The present application relates to a kind of aluminum silicon target material and its preparation method and application, the preparation method includes the following steps: (1) aluminum silicon target blank is preheated and then forged, obtain hot-forged target blank;(2) the hot-forged target blank obtained is sequentially subjected to first heat treatment, second heat treatment and third heat treatment, obtain rolling target blank;First pressing is further included between the first heat treatment and the second heat treatment;Second pressing is further included between the second heat treatment and the third heat treatment;(3) the rolling target blank obtained is machined, obtain the aluminum silicon target material.The present application designs a kind of preparation process of aluminum silicon target material, by three heat treatments and in gap two times of rolling, the crystal direction of the internal structure of target material is controlled, and the internal structure is optimized, so as to ensure the film quality and yield.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of target material manufacturing, and relates to an aluminum-silicon target material and a preparation method and application thereof. BACKGROUND

[0002] The magnetron sputtering technology is a commonly used method for depositing thin films in integrated circuit manufacturing, and the source material consumed is called a target material. The mechanism of sputtering is momentum transfer, that is, the momentum of incident ions is transferred to the atoms on the target surface, so that the atoms are shot out of the bond energy. The largest amount of sputtering metal target material is ultra-high purity aluminum and ultra-high purity alloy. At present, aluminum alloy thin films and target materials are mainly applied in the following five fields: ① semiconductor integrated circuit (IC) electrode wiring film; ② optical recording medium reflective film; ③ thin film transistor type liquid crystal display (TFT-LCD) electrode wiring film; ④ solid-state imaging device and liquid crystal display light shielding film; and ⑤ functional electronic component wiring film. The target material product has strict requirements for the internal organizational structure, which seriously affects the sputtering rate and the uniformity of the deposited thin film. The smaller the target material grain is, the more uniform the organization is, the more consistent the orientation is, and the better the performance of the sputtered thin film is.

[0003] CN 116334551A discloses a high-aluminum aluminum-titanium target and a preparation method thereof. The atomic percentage of aluminum in the target material is greater than 50%, and the target material is composed of elemental phases of Al and Ti without alloy phases. The target material has extremely high strength or toughness and is easy to process into a complex shape without cracking or breaking during the processing. The target material is mainly applied to AlTiN coating film plating and decorative film plating of cutters. The main processes of the preparation of the target material include powder mixing, bagging and degassing, hot isostatic pressing, machining, etc.

[0004] CN 115341161A provides a copper-aluminum alloy target material, a preparation method and application thereof. The copper-aluminum target blank is sequentially subjected to preheating, three-way forging, heat treatment, cold pressing, cold rolling and flattening to obtain a copper-aluminum alloy target material. The three-way forging includes first forging in the X-axis direction, second forging in the Y-axis direction and third forging in the Z-axis direction. Any two of the X-axis direction, the Y-axis direction and the Z-axis direction are perpendicular to each other. The copper-aluminum alloy target material and the preparation method thereof can prepare a high-strength copper-aluminum target material, improve the uniformity of the film plating, have high strength under a high sputtering rate of ≥5·10 -3 g / min, and the preparation method is simple to operate.

[0005] However, the existing aluminum target manufacturing technology has the problem of uneven internal organization, which causes defects on the surface of the thin film after sputtering film plating, affecting the quality and yield. How to optimize the internal organizational structure of the target material to ensure the quality of the product is a technical problem to be solved. SUMMARY

[0006] To solve the above technical problems, the application provides an aluminum-silicon target material and a preparation method and application thereof, designs a preparation process of the aluminum-silicon target material, controls the crystal direction of the internal structure of the target material through three heat treatments and two rolling processes in the gap, optimizes the internal structure, and thus ensures the film quality and yield.

[0007] To achieve the above purpose, the application adopts the following technical solutions.

[0008] In the first aspect, the application provides a preparation method of an aluminum-silicon target material, which comprises the following steps:

[0009] (1) preheating and forging the aluminum-silicon target blank to obtain a hot-forged target blank;

[0010] (2) sequentially performing first heat treatment, second heat treatment and third heat treatment on the obtained hot-forged target blank to obtain a rolled target blank;

[0011] The first heat treatment and the second heat treatment further comprise first pressing, and the second heat treatment and the third heat treatment further comprise second pressing.

[0012] (3) performing machine tool processing on the obtained rolled target blank to obtain the aluminum-silicon target material.

[0013] The application designs a preparation process of an aluminum-silicon target material, controls the crystal direction of the internal structure of the target material through three heat treatments and two rolling processes in the gap, optimizes the internal structure, and thus ensures the film quality and yield.

[0014] Preferably, the preheating temperature in step (1) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0015] Preferably, the holding time of the preheating in step (1) is 10-30min, for example, it can be 10min, 15min, 20min, 25min or 30min, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0016] Preferably, the forging in step (1) is repeated for 1-2 times.

[0017] Preferably, the forging ratio of the forging in step (1) is 1.5-2.5, for example, it can be 1.5, 1.8, 2, 2.2 or 2.5, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0018] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0019] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0020] When the temperature is too high, the grain is coarse, and the product performance is reduced; when the temperature is too low, the annealing is not complete, and cracking is prone to occur during subsequent processing.

[0021] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0022] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0023] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0024] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0025] When the temperature is too high, part of the deformation texture is converted to R texture, and the proportion of (200) surface decreases; when the temperature is too low, the formed cubic texture has few primary recrystallization nuclei, and the proportion of (200) surface decreases.

[0026] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0027] Preferably, the temperature of the first heat treatment in step (2) is 100-200℃, for example, it can be 100℃, 120℃, 140℃, 160℃, 180℃ or 200℃, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0028] Preferably, the temperature of the third heat treatment in step (2) is 300-320°C, for example, it can be 300°C, 305°C, 310°C, 315°C or 320°C, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0029] When the temperature is too high, the energy consumption increases, the (200) surface ratio improvement effect is not obvious, and the grain is easy to be coarse, and the product performance decreases. When the temperature is too low, the internal residual deformation texture is decreased, and the (200) surface ratio is decreased.

[0030] Preferably, the heating rate of the third heat treatment in step (2) is 4-6°C / min, for example, it can be 4°C / min, 4.5°C / min, 5°C / min, 5.5°C / min or 6°C / min, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0031] Preferably, the holding time of the third heat treatment in step (2) is 30-60 min, for example, it can be 30 min, 35 min, 40 min, 50 min or 60 min, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0032] Preferably, the cooling method after the third heat treatment in step (2) is water cooling.

[0033] Preferably, the total deformation amount of the first pressing in step (2) is 60-90%, for example, it can be 60%, 65%, 70%, 80% or 90%, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0034] When the deformation amount is too high, the recrystallization nucleation is too much, part of the deformation texture is converted into recrystallization R texture, and the (200) surface ratio is reduced. When the deformation amount is too low, the generated primary cubic orientation texture is less, and the (200) surface ratio is reduced.

[0035] Preferably, the down pressure of each pass of the first pressing in step (2) is 5-10 mm, for example, it can be 5 mm, 6 mm, 7 mm, 8 mm, 9 mm or 10 mm, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0036] Preferably, the total deformation amount of the second pressing in step (2) is 20-40%, for example, it can be 20%, 25%, 30%, 35% or 40%, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0037] When the deformation is too high, there are fewer cubic orientation nuclei in the non-uniform deformation shear band, which weakens the cubic texture and reduces the proportion of the (200) plane; when the deformation is too low, the deformation distortion is small, which easily leads to coarse grains.

[0038] Preferably, in step (2), the pressing depth per pass of the second pressing is 5-10 mm, for example, it can be 5 mm, 6 mm, 7 mm, 8 mm, 9 mm or 10 mm, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable. In a second aspect, the present invention provides an aluminum-silicon target material, which is obtained by the preparation method described in the first aspect.

[0039] Preferably, the grain size of the aluminum-silicon target is 200~250μm, for example, it can be 200μm, 210μm, 220μm, 230μm, 240μm or 250μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0040] Preferably, the proportion of the aluminum-silicon target material with the grain orientation (200) plane is >60%, for example, it can be 62%, 65%, 70%, 80% or 90%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0041] Preferably, the mass percentage of silicon in the aluminum-silicon target is 20-40 ppm, for example, it can be 20 ppm, 25 ppm, 30 ppm, 35 ppm or 40 ppm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0042] This invention improves the process steps to prepare an aluminum-silicon target with fine grains (200~250μm) and predominant crystal orientation (>60%).

[0043] Thirdly, the present invention provides an application of the aluminum-silicon sputtering target according to the second aspect, wherein the aluminum-silicon sputtering target is used in any one of integrated circuits, optical recording medium reflective films, liquid crystal displays, solid-state imaging devices, or wiring films for functional electronic components.

[0044] Compared with the prior art, the present invention has at least the following beneficial effects:

[0045] This invention designs a process for preparing aluminum-silicon target materials. By performing three heat treatments and two rolling processes in between, the crystal orientation dominance of the internal structure of the target material is controlled, and the internal microstructure is optimized, thereby ensuring the quality of the thin film and the yield. Detailed Implementation

[0046] To facilitate understanding of the present invention, the following embodiments are provided. Those skilled in the art should understand that these embodiments are merely illustrative and should not be construed as limiting the scope of the invention.

[0047] Example 1

[0048] This embodiment provides a method for preparing an aluminum-silicon target, the method comprising:

[0049] (1) The Al-30ppmSi target billet was preheated at 150℃ for 20 minutes, then forged at a forging ratio of 2, and the forging was repeated once to obtain a hot forged target billet.

[0050] (2) The obtained hot-forged target billet is subjected to a first heat treatment, a first pressing, a second heat treatment, a second pressing and a third heat treatment in sequence to obtain a rolled target billet;

[0051] The temperature of the first heat treatment is 150℃, the heating rate is 5℃ / min, the holding time is 20min, and the cooling method is water cooling after the first heat treatment.

[0052] The total deformation of the first pressing is 75%, and the pressing amount per pass is 8mm.

[0053] The second heat treatment temperature is 150℃, the heating rate is 5℃ / min, the holding time is 2min, and the second heat treatment is cooled by water cooling.

[0054] The total deformation of the second pressing is 30%, and the pressing amount per pass is 8mm;

[0055] The third heat treatment is performed at a temperature of 310°C, a heating rate of 5°C / min, and a holding time of 45min. After the third heat treatment, water cooling is used for cooling.

[0056] (3) The obtained rolled target billet is machined to obtain the aluminum-silicon target material.

[0057] The aluminum-silicon target obtained in this embodiment has a grain size of 218 μm, and the proportion of grains with the (200) orientation is 61%. By improving the process steps, this invention prepares an aluminum-silicon target with fine grains and dominant crystal orientation, ensuring film quality and yield.

[0058] Example 2

[0059] This embodiment provides a method for preparing an aluminum-silicon target, the method comprising:

[0060] (1) The Al-30ppmSi target billet was preheated at 100℃ for 30 min, then forged at a forging ratio of 2.5, and the forging was repeated once to obtain a hot forged target billet;

[0061] (2) The obtained hot-forged target billet is subjected to a first heat treatment, a first pressing, a second heat treatment, a second pressing and a third heat treatment in sequence to obtain a rolled target billet;

[0062] The temperature of the first heat treatment is 100℃, the heating rate is 4℃ / min, the holding time is 30min, and the cooling method is water cooling after the first heat treatment.

[0063] The total deformation of the first pressing is 60%, and the pressing amount per pass is 5mm.

[0064] The second heat treatment temperature is 100℃, the heating rate is 4℃ / min, the holding time is 5min, and the second heat treatment is cooled by water cooling.

[0065] The total deformation of the second pressing is 20%, and the pressing amount per pass is 5mm;

[0066] The third heat treatment is performed at a temperature of 300°C, a heating rate of 4°C / min, and a holding time of 60min. After the third heat treatment, water cooling is used for cooling.

[0067] (3) The obtained rolled target billet is machined to obtain the aluminum-silicon target material.

[0068] The aluminum-silicon target obtained in this embodiment has a grain size of 232 μm, with 65% of the grains oriented at the (200) plane. By improving the process steps, this invention prepares an aluminum-silicon target with fine grains and a dominant crystal orientation, ensuring film quality and yield.

[0069] Example 3

[0070] This embodiment provides a method for preparing an aluminum-silicon target, the method comprising:

[0071] (1) The Al-30ppmSi target billet was preheated at 200℃ for 10 min, then forged at a forging ratio of 1.5, and the forging was repeated twice to obtain a hot forged target billet.

[0072] (2) The obtained hot-forged target billet is subjected to a first heat treatment, a first pressing, a second heat treatment, a second pressing and a third heat treatment in sequence to obtain a rolled target billet;

[0073] The temperature of the first heat treatment is 200℃, the heating rate is 6℃ / min, the holding time is 10min, and the cooling method is water cooling after the first heat treatment.

[0074] The total deformation of the first pressing is 90%, and the pressing amount per pass is 10mm.

[0075] The second heat treatment temperature is 200℃, the heating rate is 6℃ / min, the holding time is 1min, and the second heat treatment is cooled by water cooling.

[0076] The total deformation of the second pressing is 40%, and the pressing amount per pass is 10mm;

[0077] The third heat treatment is performed at a temperature of 320°C, a heating rate of 6°C / min, and a holding time of 30min. After the third heat treatment, water cooling is used for cooling.

[0078] (3) The obtained rolled target billet is machined to obtain the aluminum-silicon target material.

[0079] The aluminum-silicon target obtained in this embodiment has a grain size of 202 μm, and 70% of the grains are oriented in the (200) plane. By improving the process steps, this invention prepares an aluminum-silicon target with fine grains and a dominant crystal orientation, ensuring film quality and yield.

[0080] Example 4

[0081] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the first heat treatment is 80°C.

[0082] The aluminum-silicon target material obtained in this embodiment has edge cracks and poor appearance after rolling.

[0083] Example 5

[0084] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the first heat treatment is 220°C.

[0085] The aluminum-silicon target material obtained in this embodiment has a grain size of 300 μm, with some areas having coarse grains.

[0086] Example 6

[0087] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the second heat treatment is 80°C.

[0088] In this embodiment, the proportion of the (200) facet in the aluminum-silicon target material is 50%.

[0089] Example 7

[0090] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the second heat treatment is 220°C.

[0091] In this embodiment, the proportion of the (200) plane in the grain orientation of the aluminum-silicon target material is 48%.

[0092] Example 8

[0093] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the third heat treatment is 290°C.

[0094] In this embodiment, the proportion of the (200) plane in the grain orientation of the aluminum-silicon target material is 57%.

[0095] Example 9

[0096] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the temperature of the second heat treatment is 330°C.

[0097] In this embodiment, the proportion of the (200) plane in the grain orientation of the aluminum-silicon target material is 45%.

[0098] Example 10

[0099] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the heating rate of the first heat treatment is 3℃ / min.

[0100] The aluminum-silicon target material obtained in this embodiment has a grain size of 280 μm, with some areas having coarse grains.

[0101] Example 11

[0102] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the heating rate of the first heat treatment is 7°C / min.

[0103] The aluminum-silicon target material obtained in this embodiment has edge cracks and poor appearance after rolling.

[0104] Example 12

[0105] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the total deformation of the first pressing is 50%.

[0106] The grain size of the aluminum-silicon target obtained in this embodiment is 290 μm, with locally coarse grains; the proportion of grains with the (200) orientation is relatively low, at 50%.

[0107] Example 13

[0108] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the total deformation of the first pressing is 95%.

[0109] The aluminum-silicon target material obtained in this embodiment has a relatively low proportion of (200) plane orientation, at 49%.

[0110] Example 14

[0111] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the total deformation of the second pressing is 10%.

[0112] The aluminum-silicon target material obtained in this embodiment has a relatively low proportion of (200) plane orientation, which is 55%.

[0113] Example 15

[0114] This embodiment provides a method for preparing an aluminum-silicon target, which differs from Embodiment 1 in that the total deformation of the second pressing is 50%.

[0115] The grain size of the aluminum-silicon target obtained in this embodiment is 320 μm, with some coarse grains; the proportion of grains with (200) orientation is relatively low, at 54%.

[0116] Comparative Example 1

[0117] This comparative example provides a method for preparing aluminum-silicon sputtering targets. The preparation process of step (2) in this comparative example is modified to be: performing a heat treatment, rolling, and a second heat treatment in sequence.

[0118] The aluminum-silicon target obtained in this comparative example has a grain size of 330 μm, and 35% of the grains are oriented in the (200) plane. Compared with the example, it can be seen that its grains are coarse and the internal structure is uneven, which can easily affect the quality of the film.

[0119] Comparative Example 2

[0120] This comparative example provides a method for preparing an aluminum-silicon target, which differs from Example 1 in that step (2) of the first heat treatment is not performed.

[0121] The aluminum-silicon sputtering target obtained in this comparative example suffered severe cracking during the rolling process and was unusable.

[0122] Comparative Example 3

[0123] This comparative example provides a method for preparing an aluminum-silicon target, which differs from Example 1 in that step (2) of the first pressing is not performed.

[0124] The aluminum-silicon target obtained in this comparative example has a grain size of 350 μm, and the proportion of grains oriented in the (200) plane is 38%. Compared with the example, it can be seen that its grains are coarse and the internal structure is uneven, which can easily affect the quality of the film.

[0125] Comparative Example 4

[0126] This comparative example provides a method for preparing an aluminum-silicon target, which differs from Example 1 in that step (2) of the second heat treatment is not performed.

[0127] The aluminum-silicon target obtained in this comparative example has a grain size of 240 μm, and 43% of the grains are oriented in the (200) plane. Compared with the example, the proportion of grains oriented in the (200) plane is lower and the internal structure is uneven, which can easily affect the quality of the film.

[0128] Comparative Example 5

[0129] This comparative example provides a method for preparing an aluminum-silicon target, which differs from Example 1 in that step (2) the second pressing is not performed.

[0130] The aluminum-silicon target obtained in this comparative example has a grain size of 250 μm, and the proportion of grains with the (200) orientation is 39%. Compared with the example, it can be seen that the proportion of grains with the (200) orientation is low and the internal structure is uneven, which can easily affect the quality of the film.

[0131] Comparative Example 6

[0132] This comparative example provides a method for preparing an aluminum-silicon target, which differs from Example 1 in that the third heat treatment described in step (2) is not performed.

[0133] The aluminum-silicon target obtained in this comparative example has a grain size of 350 μm, and 40% of the grains are oriented in the (200) plane. Compared with the example, it can be seen that its grains are coarse and the internal structure is uneven, which can easily affect the quality of the film.

[0134] Comparative Example 7

[0135] This comparative example provides a method for preparing an aluminum-silicon target material, which differs from Example 1 in that: after performing a first heat treatment, a second heat treatment, and a third heat treatment in sequence, a first pressing and a second pressing are performed in sequence.

[0136] The aluminum-silicon target obtained in this comparative example has a grain size of 415 μm, and the proportion of grains oriented in the (200) plane is 28%. Compared with the example, it can be seen that its grains are coarse and the internal structure is uneven, which can easily affect the quality of the film.

[0137] In summary, this invention designs a process for preparing aluminum-silicon targets. By performing three heat treatments and two rolling processes in between, the crystal orientation dominance of the internal structure of the target is controlled, and the internal microstructure is optimized, thereby ensuring film quality and yield.

[0138] This invention illustrates the detailed process equipment and process flow through the above embodiments. However, this invention is not limited to the detailed process equipment and process flow described above, meaning that this invention does not necessarily depend on the detailed process equipment and process flow to be implemented. Those skilled in the art should understand that any improvements to this invention, equivalent substitutions of raw materials for the product of this invention, addition of auxiliary components, and selection of specific methods, all fall within the protection scope and disclosure scope of this invention.

Claims

1. A method for preparing an aluminum-silicon target, characterized in that, The preparation method includes the following steps: (1) The aluminum-silicon target billet is preheated and then forged to obtain a hot-forged target billet; (2) The obtained hot-forged target billet is subjected to a first heat treatment, a second heat treatment and a third heat treatment in sequence to obtain a rolled target billet; The process between the first heat treatment and the second heat treatment includes a first pressing; the process between the second heat treatment and the third heat treatment includes a second pressing. The temperature of the first heat treatment is 140~200℃; the heating rate of the first heat treatment is 4~6℃ / min; the temperature of the second heat treatment is 140~200℃; the heating rate of the second heat treatment is 4~6℃ / min; the temperature of the third heat treatment is 305~320℃; the heating rate of the third heat treatment is 4~6℃ / min. The total deformation of the first compression is 65-80%; the total deformation of the second compression is 20-40%. (3) The obtained rolled target billet is machined to obtain the aluminum-silicon target material.

2. The preparation method according to claim 1, characterized in that, The preheating temperature in step (1) is 100~200℃.

3. The preparation method according to claim 1, characterized in that, The preheating time in step (1) is 10~30 min.

4. The preparation method according to claim 1, characterized in that, The forging process described in step (1) is repeated 1 to 2 times.

5. The preparation method according to claim 1, characterized in that, The forging ratio in step (1) is 1.5 to 2.

5.

6. The preparation method according to claim 1, characterized in that, Step (2) The heat treatment holding time for the first heat treatment is 10~30 min.

7. The preparation method according to claim 1, characterized in that, Step (2) After the first heat treatment, water cooling is used for cooling.

8. The preparation method according to claim 1, characterized in that, In step (2), the heat treatment holding time for the second heat treatment is 0 to 5 minutes and is not 0.

9. The preparation method according to claim 1, characterized in that, Step (2) After the second heat treatment, water cooling is used for cooling.

10. The preparation method according to claim 1, characterized in that, The heat treatment time for the third heat treatment in step (2) is 30~60 min.

11. The preparation method according to claim 1, characterized in that, After the third heat treatment in step (2), the water is used for cooling.

12. The preparation method according to claim 1, characterized in that, Step (2) The amount of pressure applied in each pass of the first pressing is 5~10mm.

13. The preparation method according to claim 1, characterized in that, Step (2) The amount of pressure applied in each pass of the second pressing is 5~10mm.

14. An aluminum-silicon sputtering target, characterized in that, The aluminum-silicon target is obtained by the preparation method described in any one of claims 1-12.

15. The aluminum-silicon sputtering target according to claim 14, characterized in that, The grain size of the aluminum-silicon target is 200~250μm.

16. The aluminum-silicon sputtering target according to claim 14, characterized in that, The proportion of the aluminum-silicon target material with a grain orientation of (200) plane is >60%.

17. The aluminum-silicon sputtering target according to claim 14, characterized in that, The mass percentage of silicon in the aluminum-silicon target is 20-40 ppm.

18. An application of the aluminum-silicon sputtering target according to claim 14, characterized in that, The aluminum-silicon sputtering target is used in integrated circuits.

19. An application of the aluminum-silicon sputtering target according to claim 14, characterized in that, The aluminum-silicon target is used for reflective films in optical recording media.

20. An application of the aluminum-silicon sputtering target according to claim 14, characterized in that, The aluminum-silicon sputtering target is used in liquid crystal displays.

21. An application of the aluminum-silicon sputtering target according to claim 14, characterized in that, The aluminum-silicon target material is used in solid-state imaging devices.

22. An application of the aluminum-silicon sputtering target according to claim 14, characterized in that, The aluminum-silicon target is used for wiring films in functional electronic components.