Evaporation mask intermediate

Abstract

The present invention relates to a kind of evaporation mask intermediate body, with: multiple mask plates made of iron-nickel alloy, including multiple mask holes, with the first face and the second face, the second face is the face opposite to the first face, for contact with evaporation object;Mask frame, with higher rigidity than the mask plate, and with multiple openings, the mask frame is engaged with the first face of the mask plate in a manner that each mask plate covers one of the openings;Multiple resin layers, one resin layer is engaged with the second face of the mask plate;And multiple glass substrates, one glass substrate is engaged with each resin layer, in the temperature range of 25 DEG C or more and 100 DEG C or less, the linear expansion coefficient of each glass substrate is less than the linear expansion coefficient of the mask plate laminated on the glass substrate, and the absolute value of the difference between the linear expansion coefficient of each glass substrate and the linear expansion coefficient of the mask plate laminated on the glass substrate is 1.3 × 10 ‑6 / ℃ or less.

Description

[0001] This application is a divisional application of the application filed on March 13, 2020, with application number 202080021375.X and invention title "Method for manufacturing vapor deposition mask, method for manufacturing display device and intermediate for vapor deposition mask". Technical Field

[0002] This invention relates to a method for manufacturing a vapor deposition mask, a method for manufacturing a display device, and an intermediate for a vapor deposition mask. Background Technology

[0003] The EL element in an organic EL device is formed by vapor deposition. When forming the EL element, a vapor deposition mask is used to pattern the functional layers of the EL element. The vapor deposition mask has multiple mask templates and a common frame for mounting each mask template. The frame has a square frame shape that surrounds the object to be vapor-deposited. Each mask template is a strip of metal foil. Multiple mask regions are arranged at intervals along the direction in which the mask template extends. In each mask region, multiple through-holes are formed corresponding to the pattern of the functional layer. In each mask template, the area outside the mask regions is the peripheral region. The peripheral region is the area surrounding the mask regions. Each mask template is fixed to the frame such that the multiple mask regions are located within the area surrounded by the frame. The direction in which the multiple mask regions are arranged is along the long side, and each mask template is fixed to the frame at its peripheral regions located at both ends of the long side (for example, see Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-127721 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] However, vapor deposition masks are expected to improve the accuracy of the pattern's position relative to the object to be deposited. Therefore, a technique is used in vapor deposition masks where the passage area of ​​the mask apertures formed in the mask template is monotonically reduced from a first opening opposite the vapor deposition source toward a second opening opposite the object to be deposited. The passage area is the area of ​​the mask apertures in each plane parallel to the plane extending from the vapor deposition mask. Furthermore, in recent years, to improve the uniformity of film thickness in the pattern, it has been desirable to reduce the distance between the first and second openings, i.e., the thickness of the mask template.

[0009] On the other hand, when the mask is thin, it is difficult to obtain sufficient mechanical strength, making mask handling very difficult. Therefore, technologies to improve the processability of the aforementioned mask are highly anticipated.

[0010] The purpose of this invention is to provide a method for manufacturing a vapor deposition mask that improves the processability of the mask, a method for manufacturing a display device, and an intermediate for the vapor deposition mask.

[0011] Methods for solving problems

[0012] A method for manufacturing a vapor deposition mask to solve the above-mentioned problems is a method for manufacturing a vapor deposition mask having a mask template including multiple mask holes, made from a metal plate of an iron-nickel alloy. This method includes a step of preparing a metal plate and a glass substrate, wherein the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 1.3 × 10⁻⁶ within a temperature range of 25°C to 100°C. -6 / ℃ or below; a process of bonding the glass substrate to the metal plate via a resin layer; a process of forming a mask template from the metal plate by forming a plurality of mask holes in the metal plate after bonding with the glass substrate; a process of bonding the side of the mask template opposite to the side in contact with the resin layer to a mask frame, the mask frame having higher rigidity than the mask template and having a shape that completely surrounds the plurality of mask holes included in the mask template; and a process of removing the resin layer and the glass substrate from the mask template after bonding with the mask frame.

[0013] A method for manufacturing a display device to solve the above-mentioned problems includes a process of forming a pattern on a vapor deposition object using a vapor deposition mask manufactured by the above-described vapor deposition mask manufacturing method.

[0014] The vapor deposition mask intermediate for solving the above-mentioned problems comprises: a mask template made of an iron-nickel alloy, including a plurality of mask holes, having a first surface and a second surface opposite to the first surface; a mask frame having higher rigidity than the mask template and having a shape that completely surrounds the plurality of mask holes included in the mask template, the mask frame being bonded to the first surface of the mask template; a resin layer being bonded to the second surface of the mask template; and a glass substrate being bonded to the resin layer. Within a temperature range of 25°C to 100°C, the absolute value of the difference between the coefficient of linear expansion of the glass substrate and the coefficient of linear expansion of the mask template is 1.3 × 10⁻⁶. -6 / ℃ below.

[0015] Based on the above-described components, during the manufacturing process of the vapor deposition mask, the mask template is supported by a resin layer and a glass substrate, and is further supported by a mask frame within the vapor deposition mask. Therefore, compared to cases where no supporting components are used or where the vapor deposition mask consists solely of the mask template, the processability of the mask template can be improved during its manufacturing.

[0016] In the above-described method for manufacturing the vapor deposition mask, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate can be 0.7 × 10⁻⁶. -6 Below ℃, the above-mentioned mask frame has a thickness of more than 500μm.

[0017] Based on the above configuration, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 0.7 × 10⁻⁶. -6 The temperature is below ℃, so strain is less likely to occur in the mask due to temperature changes in the glass substrate and the mask itself. Therefore, when forming a vapor deposition mask by removing the glass substrate from the mask, the release of strain generated in the mask can be suppressed. Furthermore, since the mask is joined to a mask frame with high rigidity, displacement of the mask position relative to the mask frame can be suppressed after the mask is joined. Therefore, changes in the position of each through-hole relative to the vapor deposition object can be suppressed, resulting in improved positional accuracy of the pattern formed on the vapor deposition object.

[0018] In the above-described method for manufacturing the vapor deposition mask, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate can be 0.4 × 10⁻⁶. -6 Below / ℃, the above-mentioned mask frame has a thickness of more than 20μm.

[0019] Based on the above configuration, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 0.4 × 10⁻⁶. -6 The temperature is below a certain range, thus, when forming a vapor deposition mask by removing the glass substrate from the mask, the strain generated in the mask can be suppressed and released. Furthermore, since the mask is joined to a mask frame with high rigidity, the position of the mask relative to the mask frame can be suppressed after the mask is joined. Therefore, changes in the position of each through-hole relative to the vapor deposition object can be suppressed, resulting in improved positional accuracy of the pattern formed on the vapor deposition object.

[0020] In the above-mentioned method for manufacturing vapor deposition masks, the coefficient of linear expansion of the glass substrate may be smaller than that of the metal plate.

[0021] According to the above configuration, during the manufacturing process of the vapor deposition mask, when the laminate including the glass substrate and the metal plate is heated, the metal plate expands more than the glass substrate. Therefore, the metal plate extends in a direction from an inner position relative to the edge of the mask towards an outer position relative to the edge. However, since the metal plate is supported by a support body including a glass substrate with high rigidity, the metal plate is fixed to the support body with a force containing a force from an inner position relative to the edge of the mask towards an outer position relative to the edge. Then, when the mask formed from the metal plate is joined to the frame while its temperature has decreased, a force is applied to the mask in a direction that causes the mask to contract when the support body is removed. At this time, since the mask is joined to the frame, the position of the mask relative to the frame can be suppressed by the frame, and the deflection of the mask can be suppressed.

[0022] In the above-mentioned method for manufacturing vapor deposition masks, the glass substrate may also be formed by selecting any one of the group consisting of alkali-free glass, quartz glass, crystal glass, borosilicate glass, high-silicate glass, porous glass and soda-lime glass.

[0023] Based on the above configuration, it is possible to achieve an absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the photomask that is 1.3 × 10⁻⁶ within a temperature range of 25°C to 100°C. -6 / ℃ below.

[0024] The above-described method for manufacturing a vapor deposition mask may also include a step of forming multiple mask templates, forming multiple openings in the mask frame, and joining the mask templates to the mask frame in a manner in which each mask template covers one of the openings. The mask frame has: a frame-shaped portion located at the outer edge of the mask frame, surrounding the vapor deposition object; dividing elements located within the area surrounded by the frame-shaped portion, having a grid-like structure; and the openings formed by the dividing elements.

[0025] Based on the above configuration, since the mask frame has lattice-like dividing elements, its rigidity is increased compared to a square frame. Furthermore, a mask template is directly joined around each opening of the rigid mask frame. Therefore, compared to a structure supporting each mask template that is a straight line extending in a one-dimensional direction along the width of the elongated mask template, mask template deflection can be suppressed. As a result, the positional accuracy of the pattern formed on the vapor-deposited object is improved.

[0026] The effects of the invention

[0027] According to the present invention, the processability of vapor deposition masks can be improved. Attached Figure Description

[0028] Figure 1 This is a three-dimensional diagram showing the structure of the first example of a vapor deposition mask.

[0029] Figure 2 It means Figure 1 A cross-sectional view of a portion of the structure of the vapor deposition mask shown.

[0030] Figure 3 It is Figure 2 The diagram shows an enlarged cross-sectional view of the structure of the vapor deposition mask.

[0031] Figure 4 This is a plan view showing the construction of the second example of a vapor deposition mask.

[0032] Figure 5 It means Figure 4 The cross-sectional view of the vapor deposition mask structure shown.

[0033] Figure 6 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0034] Figure 7 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0035] Figure 8 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0036] Figure 9 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0037] Figure 10 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0038] Figure 11 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0039] Figure 12 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0040] Figure 13 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0041] Figure 14 This is a process diagram used to illustrate the manufacturing method of vapor deposition masks.

[0042] Figure 15 This is a diagram illustrating the function of a vapor deposition mask.

[0043] Figure 16 This is a diagram illustrating the function of a vapor deposition mask.

[0044] Figure 17 It is a schematic diagram showing the configuration of the vapor deposition apparatus, the vapor deposition mask, and the vapor deposition object.

[0045] Figure 18 It is a plan view used to illustrate the method for determining the positional accuracy in the test examples. Detailed Implementation

[0046] Reference Figures 1 to 18 An embodiment of a vapor deposition mask manufacturing method, a display device manufacturing method, and an intermediate body for a vapor deposition mask will be described. Hereinafter, the vapor deposition mask, the vapor deposition mask manufacturing method, and the display device manufacturing method will be described sequentially.

[0047] [Evaporation mask]

[0048] Reference Figures 1 to 5 The structure of the vapor deposition mask will be explained. First, the structure of the first example of the vapor deposition mask will be explained, followed by the structure of the second example of the vapor deposition mask.

[0049] [Example 1]

[0050] Reference Figures 1 to 3 The first example of a vapor deposition mask will be explained.

[0051] like Figure 1 As shown, the vapor deposition mask 10A includes a mask frame 11A and a plurality of mask templates 12. The mask frame 11A has a frame-shaped portion 11Aa, dividing elements 11Ab, and a plurality of openings 11Ac. The frame-shaped portion 11Aa is located at the outer edge of the mask frame 11A and has a size and shape capable of surrounding the vapor deposition object S. The dividing elements 11Ab are located within the area surrounded by the frame-shaped portion 11Aa and have a grid-like structure. The plurality of openings 11Ac are divided by the dividing elements 11Ab. In other words, the dividing elements 11Ab isolate the plurality of openings 11Ac from each other. Each mask template 12 has a plurality of through holes. The plurality of mask templates 12 are joined to the mask frame 11A such that each mask template 12 covers one opening 11Ac.

[0052] The mask frame 11A has lattice-like dividing elements 11Ab, thus increasing its rigidity compared to a frame with a square shape. Then, a mask template 12 is directly joined around each opening 11Ac of the rigid mask frame 11A. Therefore, compared to a structure supporting each mask template 12 being a straight line extending in a one-dimensional direction along the width of the elongated mask template, deflection of the mask template 12 can be suppressed. As a result, the positional accuracy of the pattern formed on the vapor deposition object S is improved.

[0053] The mask frame 11A has lattice-like dividing elements 11Ab. In other words, the structure supporting each mask template 12 is a highly rigid lattice extending along a two-dimensional direction, thus the mask frame 11A itself is not prone to deflection. Therefore, the mask template 12, which is directly connected to the mask frame 11A, is also not prone to deflection. In contrast, when the mask frame is square, the structure supporting each mask template becomes a straight line extending along a one-dimensional direction in the width direction of the elongated mask template, and the mask template is only located at both ends of the extension direction. Therefore, the mask template is prone to deflection in the extension direction.

[0054] The frame-shaped portion 11Aa has a square shape. When the vapor deposition mask 10A is used for vapor deposition on the vapor deposition object S, viewed from a viewpoint opposite to the plane extending from the vapor deposition object S, a portion of the frame-shaped portion 11Aa is located outside the edge of the vapor deposition object S, and another portion of the frame-shaped portion 11Aa overlaps with the vapor deposition object S. The mask frame 11A has a surface 11AF and a back surface 11AR. The back surface 11AR in the mask frame 11A is the surface facing the vapor deposition object S. Furthermore, Figure 1 The structure of the vapor deposition mask 10A as seen from a viewpoint opposite to the back side 11AR is shown.

[0055] In this embodiment, the dividing element 11Ab has a portion extending along a first direction D1 and a portion extending along a second direction D2 orthogonal to the first direction D1. The dividing element 11Ab has a rectangular grid shape. Thus, in the mask frame 11A, a plurality of openings 11Ac are arranged in the first direction D1, and a plurality of openings 11Ac are arranged in the second direction D2. In each direction D1 and D2, the plurality of openings 11Ac are arranged at equal intervals. Viewed from a viewpoint opposite to the back surface 11AR, each opening 11Ac has a rectangular shape.

[0056] Furthermore, the plurality of openings 11Ac may not be arranged at equal intervals along the first direction D1 and the second direction D2. That is, the interval between adjacent openings 11Ac may include multiple sizes. Moreover, the plurality of openings 11Ac may be arranged in a grid pattern, and are therefore not limited to a rectangular grid as described above; they may also be arranged in a triangular grid or a hexagonal grid. Furthermore, the plurality of openings 11Ac may also be arranged in an alternating grid pattern (houndstooth pattern). The openings 11Ac do not necessarily have to be rectangular. In this case, the openings 11Ac may be, for example, square, circular, or elliptical. The plurality of openings 11Ac may also include openings 11Ac with a first shape and openings 11Ac with a second shape.

[0057] Viewed from a perspective opposite to the back face 11AR of the mask frame 11A, the mask template 12 has a shape and size capable of covering the opening 11Ac. In this embodiment, the mask template 12 is rectangular. One mask template 12 is installed for each opening 11Ac, therefore the vapor deposition mask 10A has the same number of mask templates 12 as the number of openings 11Ac.

[0058] The mask frame 11A and the mask template 12 are made of metal. Preferably, the metal forming the mask frame 11A and the metal forming the mask template 12 are the same. Therefore, when the vapor deposition mask 10A is used, even if the vapor deposition mask 10A is heated, deformation of the mask template 12 caused by the difference in the coefficient of linear expansion between the vapor deposition mask 10A and the mask template 12 can be suppressed. As a result, the reduction in the positional accuracy of the pattern formed using the vapor deposition mask 10A can be suppressed.

[0059] The material forming the photomask 12 can be an iron-nickel alloy, i.e., an iron-nickel alloy. Even among iron-nickel alloys, an alloy containing 36% by mass of nickel, i.e., an Invar alloy, is preferred. The material forming the photomask 12 can also be an alloy containing 42% by mass of nickel, i.e., an alloy 42. The photomask 12 can also contain additives such as chromium, manganese, carbon, and cobalt in addition to iron and nickel.

[0060] Furthermore, the material forming the vapor deposition object S is preferably glass. When the vapor deposition object S is made of glass, since the mask 12 is made of Invar alloy, the difference between the coefficient of linear expansion of the vapor deposition object S and the coefficient of linear expansion of the mask 12 can be suppressed from increasing. Alternatively, the vapor deposition object S can also be a laminate of a glass substrate and a resin layer. In this case, a pattern is formed on the resin layer of the vapor deposition object S. Furthermore, the vapor deposition object S can also be a resin film. From the viewpoint of the coefficient of linear expansion of the resin layer and the resin film, polyimide resin is preferred, for example, as the material forming the resin layer and the resin film.

[0061] Figure 2 This represents the local cross-sectional structure of the vapor deposition mask 10A along a plane orthogonal to surface 11AF and parallel to the first direction D1.

[0062] like Figure 2 As shown, each opening 11Ac is a through hole that passes between the surface 11AF and the back surface 11AR of the mask frame 11A. Figure 2In the example shown, each opening 11Ac is rectangular, and the rectangular cross-sectional shapes of each opening 11Ac are connected along the second direction D2. Furthermore, the cross-sectional shape of each opening 11Ac can also be, for example, trapezoidal or inverted trapezoidal. When the cross-sectional shape of the opening 11Ac is trapezoidal, the opening 11Ac has the following shape: the width of the opening 11Ac on the back surface 11AR is greater than the width on the surface 11AF, and the width of the opening 11Ac monotonically increases in the direction from the surface 11AF toward the back surface 11AR.

[0063] On the other hand, when the cross-sectional shape of the opening 11Ac is an inverted trapezoid, the opening 11Ac has the following shape: the width of the opening 11Ac on the back surface 11AR is smaller than the width on the surface 11AF, and the width of the opening 11Ac decreases monotonically in the direction from the surface 11AF toward the back surface 11AR. Furthermore, the cross-sectional shape of the opening 11Ac can also be an arc shape, where the center of curvature is located closer to the surface 11AF than the back surface 11AR.

[0064] The thickness TF of the mask frame 11A is preferably 500 μm or more. The thickness TF of the mask frame 11A is the thickness of the mask frame 11A in a structure formed along a cross-section orthogonal to the plane extending from the mask frame 11A. Therefore, the mask frame 11A has higher rigidity due to its thickness, thus further suppressing the expansion or contraction of the mask template 12. Consequently, it is possible to further suppress changes in the position of each through-hole relative to the vapor deposition object S. As a result, the positional accuracy of the pattern formed on the vapor deposition object S is further improved. The thickness TM of the mask template 12 is, for example, 1 μm or more and 15 μm or less. In the mask template 12, the region where the multiple through-holes are located is the mask region 12a, and the region surrounding the mask region 12a is the peripheral region 12b. The thickness of the mask region 12a can be equal to or thinner than the thickness of the peripheral region 12b.

[0065] The vapor deposition mask 10A has a joint portion 10Aa where the mask frame 11A and the mask template 12 are joined. The joining of the mask frame 11A and the mask template 12 can be achieved by bonding with an adhesive disposed between the mask frame 11A and the mask template 12, or by laser welding of the mask frame 11A and the mask template 12 with laser light. When the mask frame 11A and the mask template 12 are joined with adhesive, the joint portion 10Aa is formed by the adhesive. When the mask frame 11A and the mask template 12 are joined by laser welding, the joint portion 10Aa is the laser irradiation mark.

[0066] Viewed from a perspective opposite to the back face 11AR, the joint 10Aa can be located entirely or intermittently in the circumferential direction of the mask template 12. When the joint 10Aa is intermittently located in the circumferential direction of the mask template 12, it is preferable that at least a portion of each side of the mask template 12 is engaged with the mask frame 11A.

[0067] like Figure 3 As shown, the mask 12 has a surface 12F and a back surface 12R opposite to the surface 12F. Surface 12F is an example of a first surface, and back surface 12R is an example of a second surface. Surface 12F is the surface used to face the vapor deposition source within the vapor deposition apparatus. A portion of surface 12F is engaged with the mask frame 11A. Back surface 12R is the surface used to contact the vapor deposition object S within the vapor deposition apparatus.

[0068] The mask 12 can be formed from a single metal plate or from multiple metal plates. When the mask 12 is formed from multiple metal plates, the multiple metal plates are stacked in the thickness direction of the mask 12. The mask 12 has multiple mask holes 12H, one example being through holes. The side faces of the mask holes 12H, in a cross-section along the thickness direction of the mask 12, have a semi-circular arc shape that tapers from the surface 12F towards the back surface 12R.

[0069] As described above, the thickness of the mask 12 is, for example, 1 μm or more and 15 μm or less. If the mask 12 is thinner, when observing the vapor-deposited object from the vapor-deposited particles flying toward the mask 12, the portion that is shadowed by the vapor-deposited mask 10A can be reduced, that is, the shadowing effect can be suppressed.

[0070] Furthermore, if the thickness of the photomask 12 is 3 μm or more but less than 5 μm, the photomask 12 can have multiple mask holes 12H that are separated from each other when viewed from above opposite the surface 12F, and can accommodate mask holes 12H for high-resolution display devices with a resolution of 700 ppi or more but less than 1000 ppi. Furthermore, if the thickness of the photomask 12 is 5 μm or more but less than 10 μm, the photomask 12 can have multiple mask holes 12H that are separated from each other when viewed from above opposite the surface 12F, and can accommodate mask holes 12H for medium-resolution display devices with a resolution of 400 ppi or more but less than 700 ppi. Furthermore, if the thickness of the photomask 12 is 10 μm or more but less than 15 μm, the photomask 12 can have multiple mask holes 12H that are separated from each other when viewed from above opposite the surface 12F, and can accommodate mask holes 12H for low-resolution display devices with a resolution of 300 ppi or more but less than 400 ppi.

[0071] Furthermore, the multiple mask holes 12H can also be arranged such that, when viewed from above opposite the surface 12F, each mask hole 12H is connected to other adjacent mask holes 12H. In this case, even if the thickness of the mask 12 is 5 μm or more but less than 10 μm, the mask 12 can still have mask holes 12H capable of handling high-resolution display devices. Furthermore, even if the thickness of the mask 12 is 10 μm or more but less than 15 μm, the mask 12 can still have mask holes 12H capable of handling medium-resolution or high-resolution display devices.

[0072] Surface 12F includes an opening of mask aperture 12H, i.e., surface opening H1. Back surface 12R includes an opening of mask aperture 12H, i.e., back opening H2. Viewed from a viewpoint opposite to surface 12F, surface opening H1 is larger than back opening H2. Each mask aperture 12H is a pathway for vaporized or sublimated vaporized particles from the vapor deposition source. Vaporized or sublimated vaporized particles from the vapor deposition source advance within the mask aperture 12H from surface opening H1 toward back opening H2. Because surface opening H1 is larger than back opening H2 within the mask aperture 12H, the shading effect on vaporized particles entering from surface opening H1 can be suppressed.

[0073] When the thickness of the photomask 12 is 3 μm or more but less than 5 μm, multiple mask holes 12H capable of manufacturing the aforementioned high-resolution display device can be formed simply by wet etching the metal plate used to form the photomask 12 from its surface. When the thickness of the photomask 12 is 10 μm or more but less than 15 μm, multiple mask holes 12H capable of manufacturing the aforementioned low-resolution display device can be formed simply by wet etching the metal plate from its surface. In either case, it is not necessary to wet-etch the metal plate from its back side.

[0074] In contrast, to use a thicker metal plate to form the vapor deposition mask used in manufacturing display devices of various resolutions, it is necessary to wet-etch the metal plate from both its surface and back side. When wet etching is performed on both the surface and back side, each mask aperture has a shape in which a surface recess including a surface opening and a back recess including a back opening are connected in the thickness direction of the mask. The portion where the surface recess and the back recess are connected in the mask aperture is a connecting portion. At the connecting portion, the area of ​​the mask aperture 12H along the direction parallel to the surface 12F is minimized. In such a mask aperture 12H, the distance between the back opening and the connecting portion is a step difference. The larger the step difference, the greater the aforementioned shading effect. In the aforementioned mask 12, the step difference is zero. Therefore, the mask 12 has a preferred structure for suppressing shading effects.

[0075] Furthermore, the mask template 12 may have only one mask region 12a with multiple mask holes 12H, or it may have multiple mask regions 12a. When the mask template 12 has multiple mask regions 12a, adjacent mask regions 12a are distinguished from each other by peripheral regions 12b that do not have mask holes 12H. Furthermore, in all the multiple mask templates 12 included in the vapor deposition mask 10A, each mask template 12 may have the same number of mask regions 12a, or the multiple mask templates 12 may include a mask template 12 having a first number of mask regions 12a and a mask template 12 having a second number of mask regions 12a.

[0076] [Example 2]

[0077] Reference Figure 4 as well as Figure 5 The second example of a vapor deposition mask will be described. In this second example, the shape of the mask frame differs from that in the first example. Therefore, the differences between the second and first examples will be described in detail below, while the commonalities between the second and first examples will be omitted.

[0078] like Figure 4 As shown, the vapor deposition mask 10B includes a mask template 12 and a mask frame 11B. Viewed from a perspective opposite to the surface 11BF, the mask frame 11B has an elongated shape extending in one direction. The mask frame 11B has higher rigidity than the mask template 12.

[0079] exist Figure 4 In the example shown, the vapor deposition mask 10B includes a plurality of mask templates 12, and the mask frame 11B has the same number of openings 11Bc as the mask templates 12. The plurality of mask templates 12 are arranged in a row along the direction extending from the mask frame 11B, thus the mask frame 11B has a ladder-like shape capable of surrounding each mask template 12. Alternatively, the vapor deposition mask 10B may also have two or more rows of mask templates 12 arranged along the width direction of the mask frame 11B. In this case, the mask frame 11B also has two or more rows of openings 11Bc arranged along the width direction of the mask frame 11B.

[0080] Furthermore, in the vapor deposition mask 10B, similar to the vapor deposition mask 10A described above, the mask template 12 may have only one mask region 12a with a plurality of mask holes 12H, or it may have multiple mask regions 12a. When the mask template 12 has multiple mask regions 12a, adjacent mask regions 12a are distinguished from each other by peripheral regions 12b that do not have mask holes 12H. Furthermore, the number of mask regions 12a may be the same for all of the multiple mask templates 12 in the vapor deposition mask 10B, or the multiple mask templates 12 may include a mask template 12 with a first number of mask regions 12a and a mask template 12 with a second number of mask regions 12a.

[0081] The vapor deposition mask 10B and the support frame SF supporting the vapor deposition mask 10B together form the mask assembly MD. Figure 4 In the example shown, a mask assembly MD is formed by mounting multiple vapor deposition masks 10B onto a support frame SF. The support frame SF has a rectangular frame shape. The mask template 12 of each vapor deposition mask 10B is located within the area defined by the support frame holes SFH of the support frame SF. The thickness of the support frame SF is greater than the thickness of the mask frame 11B. Therefore, due to the thickness of the support frame SF, the support frame SF has higher rigidity than the mask frame 11B. The thickness of the support frame SF can, for example, be more than 10 mm and less than 30 mm.

[0082] Figure 5 This indicates the cross-sectional structure of the vapor deposition mask 10B along a plane orthogonal to the surface 11BF and parallel to the direction in which the mask frame 11B extends.

[0083] like Figure 5 As shown, each opening 11Bc is a through hole penetrating the surface 11BF and the back surface 11BR of the mask frame 11B. Each opening 11Bc has a rectangular shape, and the rectangular cross-sectional shape of each opening 11Bc is connected along the width direction of the mask frame 11B. Furthermore, similar to the opening 11Ac of the mask frame 11A in the first example, each opening 11Bc may also be trapezoidal, inverted trapezoidal, or arc-shaped. The thickness TF of the mask frame 11B is 20 μm or more. The thickness TF of the mask frame 11B may also be 100 μm or less.

[0084] [Manufacturing method of vapor deposition mask]

[0085] Reference Figures 6 to 14 The manufacturing method of vapor deposition masks is explained.

[0086] The method for manufacturing vapor deposition masks 10A and 10B is a method for manufacturing vapor deposition masks having a mask template including multiple mask holes from a metal plate made of an iron-nickel alloy. The method includes: a step of preparing a metal plate and a glass substrate; a step of bonding the metal plate and the glass substrate; a step of forming a mask template from the metal plate; a step of bonding the mask template to a mask frame; and a step of peeling off the resin layer and the glass substrate, described later, from the mask template.

[0087] In the process of preparing the metal plate and glass substrate, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate within a temperature range of 25°C to 100°C is 1.3 × 10⁻⁶. -6 Metal plates and glass substrates at temperatures below a certain temperature. In the process of bonding the metal plate and the glass substrate, the glass substrate and the metal plate are bonded via a resin layer. In the process of forming a mask template, a plurality of mask holes are formed on the metal plate after bonding with the glass substrate, and a mask template is formed from the metal plate. In the process of bonding the mask template to a mask frame, the side of the mask template opposite to the side in contact with the resin layer is bonded to a mask frame having higher rigidity than the mask template and having a shape that surrounds the plurality of mask holes contained in the mask template. Then, the resin layer and the glass substrate are peeled off from the mask template bonded to the mask frame. Hereinafter, the manufacturing method of vapor deposition masks 10A and 10B will be described in more detail with reference to the accompanying drawings.

[0088] also, Figures 6 to 11 This refers to the process from the start of the process of preparing the substrate for forming the mask 12 to the process of forming the mask 12. Figures 12 to 14 This indicates the process from joining the mask template 12 to the mask frame 11A to the process of peeling the support from the mask template 12. Furthermore, in Figures 12 to 14 In this explanation, the manufacturing method of the mask frame 11A of the vapor deposition mask 10A in the first example will be described. However, when using the mask frame 11B of the vapor deposition mask 10B in the second example, the vapor deposition mask 10B can also be manufactured using the same manufacturing method. Furthermore, in Figures 12 to 14 For ease of illustration, the structure is shown as follows: the mask frame 11A has only one opening 11Ac, and the vapor deposition mask 10A has a mask template 12.

[0089] like Figures 6 to 11 As shown, in the manufacturing method of vapor deposition masks 10A and 10B, firstly, a substrate 20 for forming the mask template 12 is prepared (see reference). Figure 6The substrate 20 of the photomask 12 includes a metal plate 21 for forming the photomask 12 and a support 22 for supporting the metal plate 21. The support 22 is formed of a resin layer 22a and a glass substrate 22b. In the substrate 20, the resin layer 22a is sandwiched between the metal plate 21 and the glass substrate 22b.

[0090] Within a temperature range of 25°C to 100°C, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 forming the mask 12 is 1.3 × 10⁻⁶. -6 / ℃ below.

[0091] Furthermore, when using the mask frame 11A of the vapor deposition mask 10A in the first example, and when the mask frame 11A has a thickness of 500 μm or more, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 is preferably 0.7 × 10⁻⁶. -6 Below / ℃. Since the absolute value of the difference between the two linear expansion coefficients is 0.7 × 10⁻⁶. -6 Because the temperature is below a certain level, the mask 12 is less prone to strain due to temperature changes in the glass substrate 22b and the mask 12 during the manufacturing process of the vapor deposition mask 10A. Therefore, when the vapor deposition mask 10A is formed by removing the glass substrate 22b from the mask 12, the strain generated in the mask 12 can be suppressed from being released. Furthermore, since the mask 12 is joined to the mask frame 11A, which has high rigidity, the position of the mask 12 relative to the mask frame 11A can be suppressed after the mask 12 is joined to the mask frame 11A. Therefore, the position of each mask hole 12H relative to the vapor deposition object S can be suppressed. As a result, the positional accuracy of the pattern formed on the vapor deposition object S is improved.

[0092] Furthermore, when using the mask frame 11B of the vapor deposition mask 10B in the second example, and when the mask frame 11B has a thickness of 20 μm or more, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 is preferably 0.4 × 10⁻⁶. -6 / ℃ or below. In this case, it is possible to obtain a thickness of 500 μm or more for the mask frame 11A and an absolute value of the difference between the coefficient of linear expansion of the glass substrate 22b and the coefficient of linear expansion of the metal plate 21, where the thickness is 500 μm or more. -6 The same effect is achieved at temperatures below / ℃.

[0093] Furthermore, when preparing the metal plate 21 and the glass substrate 22b, it is preferable to prepare a glass substrate 22b with a coefficient of linear expansion smaller than that of the metal plate 21 in a temperature range of 25°C to 100°C.

[0094] As described above, the metal plate 21 can be formed from an iron-nickel alloy. The glass substrate 22b can be formed from any one selected from the group consisting of alkali-free glass, quartz glass, crystal glass, borosilicate glass, high-silicate glass, porous glass, and soda-lime glass. Therefore, within a temperature range of 25°C to 100°C, the absolute value of the difference between the coefficient of linear expansion of the glass substrate 22b and the coefficient of linear expansion of the photomask 12 can be made 1.3 × 10⁻⁶. -6 / ℃ below.

[0095] Next, the thickness of the metal plate 21 is reduced by etching from the surface 21F. For example, the thickness of the metal plate 21 can be reduced to less than half the thickness of the metal plate 21 before etching (see reference). Figure 7 Then, a resist layer PR is formed on the surface 21F of the metal plate 21 (see reference). Figure 8 A resist mask RM is formed on surface 21F by exposing and developing the resist layer PR (see reference). Figure 9 ).

[0096] Next, the metal plate 21 is wet-etched from surface 21F using a resist mask RM. This forms a plurality of mask holes 12H in the metal plate 21 (see reference). Figure 10 In the wet etching of metal plate 21, a surface opening H1 is formed on surface 21F, and then a back opening H2, smaller than the surface opening H1, is formed on back surface 21R. Next, a photomask 12 is fabricated by removing the resist mask RM from surface 21F (see reference). Figure 11 Furthermore, the surface 21F of the metal plate 21 corresponds to the surface 12F of the mask 12, and the back surface 21R of the metal plate 21 corresponds to the back surface 12R of the mask 12.

[0097] The process of preparing the substrate 20 includes the following steps: sandwiching a resin layer 22a between a metal plate 21 and a glass substrate 22b, and bonding the metal plate 21 and the glass substrate 22b via the resin layer 22a. When bonding the metal plate 21, the resin layer 22a, and the glass substrate 22b, firstly, at least one surface of the metal plate 21 and the glass substrate 22b that is in contact with the resin layer 22a is subjected to a chemical bonding (CB) treatment. The surface of the metal plate 21 and the glass substrate 22b subjected to the CB treatment is the target surface. In the CB treatment, for example, a chemical solution is applied to the target surface, thereby imparting functional groups or the like that that are reactive with the resin layer 22a to the target surface. In the CB treatment, for example, a Si-based compound or the like is imparted to the target surface.

[0098] Then, after stacking the metal plate 21, resin layer 22a, and glass substrate 22b in the described order, they are heat-pressed together. At this time, the surfaces of the metal plate 21 and the glass substrate 22b are brought into contact with the resin layer 22a. As a result, the functional groups applied to the surfaces react with the functional groups located on the surface of the resin layer 22a, thereby bonding the metal plate 21 to the resin layer 22a and bonding the glass substrate 22b to the resin layer 22a.

[0099] The resin layer 22a is preferably made of polyimide. In this case, the coefficients of linear expansion of the metal plate 21, the resin layer 22a, and the glass substrate 22b are all of the same degree. Therefore, during the manufacturing of the vapor deposition masks 10A and 10B, even if the laminate formed by the metal plate 21, the resin layer 22a, and the glass substrate 22b is heated, warping of the laminate caused by the difference in the coefficients of linear expansion between the layers forming the laminate can be suppressed.

[0100] In the method of manufacturing the metal plate 21, electrolysis or rolling is used. As a post-processing step for the metal plate 21 obtained by these methods, grinding and annealing are appropriately used. When electrolysis is used in the manufacturing of the metal plate 21, the metal plate 21 is formed on the surface of the electrode used for electrolysis. Then, the metal plate 21 is demolded from the surface of the electrode. Thus, the metal plate 21 is manufactured. In the above-described bonding process, it is preferable to bond the metal plate 21, which has a thickness of 10 μm or more, to the glass substrate 22b via a resin layer 22a. Furthermore, when the metal plate 21 is manufactured by rolling, the thickness of the metal plate 21 is preferably 15 μm or more. When the metal plate 21 is manufactured by electrolysis, the thickness of the metal plate 21 is preferably 10 μm or more.

[0101] The electrolytic bath used in electrolysis contains an iron ion feeder, a nickel ion feeder, and a pH buffer. Additionally, the electrolytic bath may also contain stress relievers, Fe... 3+ Ion masking agents and complexing agents, etc. The electrolytic bath is a weakly acidic solution adjusted to a pH suitable for electrolysis. Iron ion suppliers, for example, can be ferrous sulfate heptahydrate, ferric chloride, and ferric sulfamate. Nickel ion suppliers, for example, can be nickel(II) sulfate, nickel(II) chloride, nickel sulfamate, and nickel bromide. pH buffers, for example, can be boric acid and malonic acid. Malonic acid also acts as a Fe... 3+ Ion masking agents are used. Stress-relieving agents, such as sodium saccharin, can be used. Complexing agents, such as malic acid and citric acid, can be used. The electrolytic bath used for electrolysis is, for example, an aqueous solution containing the above-mentioned additives. The pH of the electrolytic bath is adjusted to between 2 and 3 using a pH adjuster, for example. Furthermore, pH adjusters can include 5% sulfuric acid and nickel carbonate, etc.

[0102] The conditions used in electrolysis are those for adjusting the thickness and composition ratio of the metal plate 21 to desired values. These conditions include the temperature of the electrolytic bath, the current density, and the electrolysis time. The anode used in the electrolytic bath can be, for example, a pure iron plate or a nickel plate. The cathode used in the electrolytic bath can be, for example, a stainless steel plate such as SUS304. The temperature of the electrolytic bath is, for example, between 40°C and 60°C. The current density is, for example, 1 A / dm³. 2 The above 4A / dm 2 the following.

[0103] The composition of the electrolyte and the conditions used for electrolysis can be set, for example, as follows.

[0104] Ferrous sulfate heptahydrate: 83.4 g / L

[0105] Nickel sulfate (II) hexahydrate: 250.0 g / L

[0106] • Nickel chloride (II) hexahydrate: 40.0 g / L

[0107] Boric acid: 30.0 g / L

[0108] • Sodium saccharin dihydrate: 2.0 g / L

[0109] ·Malondiic acid: 5.2g / L

[0110] Temperature: 50℃

[0111] Furthermore, even with components and conditions other than those described above, it is possible to manufacture metal plates 21 using electrolysis.

[0112] When rolling is used in the manufacture of metal sheet 21, the base material used to manufacture metal sheet 21 is rolled. Then, the rolled base material is annealed to obtain metal sheet 21. Furthermore, when forming the rolling base material for forming metal sheet 21, in order to remove oxygen mixed in the material used to form the rolling base material, deoxidizers such as granular aluminum and granular magnesium are mixed into the material used to form the base material. Aluminum and magnesium are contained in the base material as metal oxides such as alumina and magnesium oxide. Most of these metal oxides are removed from the base material before it is rolled. On the other hand, a portion of the metal oxides remains in the object being rolled, i.e., the base material. Regarding this, according to the manufacturing method of metal sheet 21 using electrolysis, metal oxides do not mix into metal sheet 21.

[0113] In the thinning process that reduces the thickness of the metal plate 21 before forming the resist mask RM, wet etching can be used. As described above, in the thinning process, the thickness of the thinned metal plate 21 can be reduced to less than half the thickness of the metal plate 21 before thinning. Therefore, the thickness of the metal plate 21 can be more than twice the thickness of the mask 12. Thus, even if the required thickness of the mask 12 is less than 15 μm as described above, a metal plate 21 with higher rigidity than the mask 12 of the vapor deposition masks 10A and 10B can be used before bonding the metal plate 21 to the glass substrate 22b. Therefore, compared to bonding a metal plate 21 with the same thickness as the mask 12 to the glass substrate 22b, it is easier to bond the metal plate 21 to the glass substrate 22b. Furthermore, the process of reducing the thickness of the metal plate 21 can be omitted.

[0114] An acidic etching solution can be used for thinning the metal plate 21 by wet etching. When the metal plate 21 is made of Invar alloy, the etching solution can be any solution capable of etching Invar alloy. The acidic etching solution can be, for example, a solution obtained by mixing any one of perchloric acid, hydrochloric acid, sulfuric acid, formic acid, and acetic acid with either a ferric perchlorate solution or a mixture of ferric perchlorate and ferric chloride solutions. Immersion etching, spray etching, and spin etching can be used to etch the surface 21F.

[0115] In the etching process for forming multiple mask holes 12H on the metal plate 21, an acidic etching solution can be used. When the metal plate 21 is formed of Invar alloy, any of the etching solutions that can be used in the above-described thinning process can be used. In the etching method for forming the mask holes 12H, any of the methods that can be used in the thinning process can also be used.

[0116] As described above, if the thickness of the metal plate 21 is 3 μm or more and 5 μm or less, then when viewed from above opposite the surface 21F of the metal plate 21, a plurality of mask holes 12H can be formed in such a manner that 700 to 1000 mask holes 12H are arranged per inch. That is, a mask 12 that can be used to form a display device with a resolution of 700 ppi or more and 1000 ppi or less can be obtained.

[0117] Furthermore, if the thickness of the metal plate 21 is 5 μm or more and 10 μm or less, then when viewed from above opposite the surface 21F of the metal plate 21, multiple mask holes 12H can be formed in such a way that 400 or more and 700 or less mask holes 12H are arranged per inch. That is, a mask 12 that can be used to form a display device with a resolution of 400 ppi or more and 700 ppi or less can be obtained.

[0118] Furthermore, if the thickness of the metal plate 21 is 10 μm or more and 15 μm or less, then when viewed from above opposite the surface 21F of the metal plate 21, a plurality of mask holes 12H can be formed in such a manner that 300 or more and 400 or less mask holes 12H are arranged per inch. That is, a mask 12 that can be used to form a display device with a resolution of 300 ppi or more and 400 ppi or less can be obtained.

[0119] Furthermore, the process of preparing the substrate 20 may include the following step: thinning the metal plate 21 from one side of the metal plate 21 before bonding the metal plate 21, the resin layer 22a, and the glass substrate 22b together. In this case, the thinning step included in the process of preparing the substrate 20 is a first thinning step, and the thinning step performed after the process of preparing the substrate 20 is a second thinning step.

[0120] In the first thinning process, the metal plate 21 is thinned by etching from the first surface. In contrast, in the second thinning process, the metal plate 21 is thinned by etching from a second surface different from the first surface. The surface obtained after etching the first surface is the surface of the metal plate 21 that is bonded to the resin layer 22a and is the surface that undergoes CB treatment.

[0121] By etching both the first and second surfaces of the metal plate 21, the residual stress of the metal plate 21 can be adjusted from both surfaces. Therefore, compared to etching only one surface, deviations in the residual stress of the etched metal plate 21 can be suppressed. Consequently, when the mask 12 obtained from the metal plate 21 is joined with the mask frames 11A and 11B, wrinkling of the mask 12 can be suppressed. In the metal plate 21, the surface obtained by etching the first surface corresponds to the back surface 12R of the mask 12, and the surface obtained by etching the second surface corresponds to the surface surface 12F of the mask 12.

[0122] Furthermore, the etching amount when etching the metal plate 21 from the first side is called the first etching amount, and the etching amount when etching the metal plate 21 from the second side is called the second etching amount. The first etching amount and the second etching amount can be equal or different. When the first etching amount and the second etching amount are different, the first etching amount can be greater than the second etching amount, or the second etching amount can be greater than the first etching amount. However, when the second etching amount is greater than the first etching amount, since the etching amount is greater when the metal plate 21 is supported by the resin layer 22a and the glass substrate 22b, the metal plate 21 has good processability, and as a result, the etching of the metal plate 21 is easier.

[0123] Furthermore, in order to reduce the residual stress of the metal plate 21, and in the case of obtaining the metal plate 21 by rolling, in order to reduce the metal oxide contained in the metal plate 21, as described above, it is preferable to etch both the first and second surfaces. Moreover, the first and second etching amounts can, for example, be 3 μm or more.

[0124] like Figures 12 to 14 As shown, a portion of the mask template 12 is engaged with a portion of the mask frame 11A (see reference). Figure 12 At this point, the multiple mask templates 12 are joined to a single mask frame 11A such that each mask template 12 covers one opening 11Ac. Furthermore, Figure 12 The structure shown is an example of a vapor deposition mask intermediate. Specifically, the vapor deposition mask intermediate includes a mask template 12, a mask frame 11A, a resin layer 22a, and a glass substrate 22b. In the vapor deposition mask intermediate, within a temperature range of 25°C to 100°C, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 1.3 × 10⁻⁶. -6 / ℃ below.

[0125] Then, the glass substrate 22b is peeled off from the resin layer 22a (see reference). Figure 13 That is, the glass substrate 22b is removed from the resin layer 22a. Next, the resin layer 22a is peeled off from each mask 12 (see reference). Figure 14 That is, the resin layer 22a is removed from each mask 12. Thus, the above-mentioned vapor deposition mask 10A is obtained. Thus, the manufacturing method of the vapor deposition mask 10A includes the following steps: after joining the plurality of mask 12 to the mask frame 11A, the support body 22 is peeled off from each mask 12.

[0126] In the process of joining a portion of the mask template 12 to a portion of the mask frame 11A, the mask frame 11A is prepared. As described above, the mask frame 11A of the vapor deposition mask 10A in the first example has a frame-shaped portion 11Aa, dividing elements 11Ab, and a plurality of openings 11Ac. When forming the mask frame 11A, a metal plate component is prepared. The plate component can be made of Invar alloy as described above, or it can be formed of a metal other than Invar alloy. For example, a metal other than Invar alloy can be stainless steel. Next, a plurality of openings 11Ac are formed on the plate component. The formation of the openings 11Ac can be performed by wet etching or by cutting based on laser beam irradiation.

[0127] In the process of joining a portion of the mask template 12 with a portion of the mask frame 11A, the surface 12F of the mask template 12 is joined to the mask frame 11A. As described above, the mask frame 11A is preferably made of an iron-nickel alloy, and the thickness of the mask frame 11A can be 20 μm or more, or 500 μm or more.

[0128] The method for joining the mask 12 to the mask frame 11A, as described above, can utilize laser welding. A laser beam L is irradiated through the glass substrate 22b and the resin layer 22a to the portion of the mask 12 where the joining portion 10Aa is located. Therefore, the glass substrate 22b and the resin layer 22a need to be transmissive relative to the laser beam L. In other words, the laser beam L needs to have a wavelength capable of transmitting through the glass substrate 22b and the resin layer 22a. Intermittent joining portions 10Aa are formed by intermittently irradiating the laser beam L along the edge of the opening 11Ac. Conversely, continuous joining portions 10Aa are formed by continuously irradiating the laser beam L along the edge of the opening 11Ac. Thus, the mask 12 is welded to the mask frame 11A.

[0129] As described above, the manufacturing method of the vapor deposition mask 10A includes a step of peeling the support body 22 from the mask template 12. The mask template 12, which includes a plurality of mask holes 12H, is supported by the support body 22 during the manufacturing of the vapor deposition mask 10A, and is further supported by the mask frame 11A within the vapor deposition mask 10A. Therefore, compared to the case where the vapor deposition mask 10A is formed without using the support body 22, and further compared to the case where the mask template 12 is supported by the aforementioned frame-like frame, the thickness of the mask template 12 can be reduced. Therefore, by shortening the distance between the surface opening H1 and the back opening H2 of the mask holes 12H, the structural accuracy of the pattern formed using the vapor deposition mask 10A can be improved. Furthermore, according to the manufacturing method of the vapor deposition mask 10A, the rigidity of the glass substrate 22b and the rigidity of the mask frame 11A can improve the processability of the mask template 12.

[0130] The process of peeling off the support 22 includes a first process and a second process. In the first process, a laser beam L with a wavelength that transmits through the glass substrate 22b and is absorbed by the resin layer 22a is irradiated at the interface between the resin layer 22a and the glass substrate 22b. As a result, the glass substrate 22b is peeled off from the resin layer 22a.

[0131] In the first step, a laser beam L is irradiated onto the interface between the resin layer 22a and the glass substrate 22b, thereby causing the resin layer 22a to absorb heat based on the laser beam L. This heats the resin layer 22a, thus reducing the chemical bond strength between the resin layer 22a and the glass substrate 22b. Then, the glass substrate 22b is peeled off from the resin layer 22a. In the first step, it is preferable to irradiate the entire bonding portion 10Aa with the laser beam L, but if the bond strength between the glass substrate 22b and the resin layer 22a can be reduced throughout the bonding portion 10Aa, then a portion of the bonding portion 10Aa may also be irradiated with the laser beam L.

[0132] At the wavelength of the laser beam L, it is preferable that the transmittance of the glass substrate 22b is higher than that of the resin layer 22a. This improves the heating efficiency of the portion of the resin layer 22a that forms the interface between the glass substrate 22b and the resin layer 22a, compared to a case where the transmittance of the glass substrate 22b is lower than that of the resin layer 22a.

[0133] When the wavelength of the laser beam L is, for example, 308 nm or more and 355 nm or less, it is preferable that the transmittance of the glass substrate 22b is 54% or more and the transmittance of the resin layer 22a is 1% or less in this wavelength range. As a result, more than half of the light intensity of the laser beam L irradiating the glass substrate 22b is transmitted through the glass substrate 22b, and the vast majority of the laser beam L that is transmitted through the glass substrate 22b is absorbed by the resin layer 22a. Therefore, the heating efficiency of the portion forming the interface between the glass substrate 22b and the resin layer 22a in the resin layer 22a can be further improved.

[0134] As described above, resin layer 22a is preferably made of polyimide. More preferably, resin layer 22a is formed of colored polyimide. Glass substrate 22b is preferably transparent.

[0135] In the second step, after the first step, a chemical solution LM is used to dissolve the resin layer 22a, thereby peeling the resin layer 22a off the mask 12. The chemical solution LM can be a liquid capable of dissolving the material forming the resin layer 22a, and is a liquid that is non-reactive to the material forming the mask 12. For example, an alkaline solution can be used as the chemical solution LM. An alkaline solution can be, for example, an aqueous solution of sodium hydroxide. Furthermore, in... Figure 14 In this example, the impregnation method is used to bring the resin layer 22a into contact with the liquid LM, but spraying and rotary methods can also be used to bring the resin layer 22a into contact with the liquid LM.

[0136] Thus, in the process of peeling the support 22 from the mask 12, the glass substrate 22b is peeled from the resin layer 22a in the first step, and the resin layer 22a is peeled from the mask 12 in the second step. Therefore, compared to the case where the support 22 is peeled from the mask 12 by means of interface damage caused by external force applied to the laminate of the glass substrate 22b, the resin layer 22a, and the mask 12, the external force acting on the mask 12 can be reduced. As a result, deformation of the mask 12 and consequently deformation of the mask aperture 12H of the mask 12 due to the peeling of the support 22 can be suppressed.

[0137] Furthermore, although the coefficients of linear expansion of the metal plate 21, resin layer 22a, and glass substrate 22b are of the same degree, as described above, there are slight differences between these coefficients. In this case, it is preferable that the coefficient of linear expansion of the glass substrate 22b is smaller than that of the metal plate 21. Therefore, the following reference can be obtained. Figure 15 as well as Figure 16 The effect of the explanation.

[0138] Reference Figure 15 as well as Figure 16 The decrease in the difference between the coefficient of linear expansion of the metal plate 21 and the coefficient of linear expansion of the glass substrate 22b is explained. Furthermore, in... Figure 15 as well as Figure 16 For ease of illustration, the resin layer 22a is omitted from the diagram. Furthermore, in the strain of the metal plate 21 and the mask 12 described below, since the thickness of the resin layer 22a included in the substrate 20 is very thin relative to the thickness of the glass substrate 22b, the effect of the linear expansion coefficient of the resin layer 22a on the strain can be ignored.

[0139] like Figure 15 As shown, when the coefficient of linear expansion of the metal plate 21 is greater than that of the glass substrate 22b—in other words, when the glass substrate 22b has a smaller coefficient of linear expansion than the metal plate 21—the metal plate 21 will extend relative to the glass substrate 22b. However, since the metal plate 21 is fixed to the glass substrate 22b, which has a higher rigidity than the metal plate 21, by the resin layer 22a, deformation of the metal plate 21 is suppressed by the glass substrate 22b. If the laminate is cooled in this state, the metal plate 21 will shrink relative to the glass substrate 22b. However, as with heating, deformation of the metal plate 21 is suppressed by the glass substrate 22b. Therefore, the metal plate 21 contains strain in the direction that causes it to shrink.

[0140] like Figure 16As shown, if the glass substrate 22b is removed from the photomask 12, the photomask 12 is released from the glass substrate 22b, thus enabling deformation of the photomask 12. As described above, since the metal plate 21 contains strain in the direction of contraction, the photomask 12 formed by etching the metal plate 21 also contains strain in the direction of contraction. Therefore, the photomask 12 deforms in the direction of contraction by the amount of the difference between the coefficient of linear expansion of the metal plate 21 and the coefficient of linear expansion of the glass substrate 22b.

[0141] If the thickness of the mask frame 11A is greater than 500 μm and the difference in the coefficients of linear expansion is 0.7 × 10⁻⁶ -6 Below a certain temperature, the deformation of the mask 12 is suppressed to a degree that can suppress the deflection of the mask 12 that engages with the mask frame 11A and maintain the positional accuracy of the mask aperture 12H. Furthermore, if the thickness of the mask frame 11B is 20 μm or more and the difference in their coefficients of linear expansion is 0.4 × 10⁻⁶, the deformation is also suppressed to a degree that can suppress the deflection of the mask 12 that engages with the mask frame 11A and maintain the positional accuracy of the mask aperture 12H. -6 Below / ℃, the deformation of the mask template 12 is suppressed to a degree that can suppress the deflection of the mask template 12 that engages with the mask frame 11B and maintain the positional accuracy of the mask hole 12H.

[0142] Furthermore, when the coefficient of linear expansion of the metal plate 21 is less than that of the glass substrate 22b, if the laminate is heated, the stress that causes the metal plate 21 to shrink relative to the glass substrate 22b is stored inside the metal plate 21. If the laminate is cooled in this state, the shrinkage of the glass substrate 22b is greater than the shrinkage of the metal plate 21, and therefore the metal plate 21 contains strain in the direction of its extension. After the mask 12 thus formed from the metal plate 21 is joined to the mask frames 11A and 11B, if the glass substrate 22b is peeled off from the mask 12, the strain of the mask 12 is released, thereby deforming the mask 12 in the direction of extension.

[0143] Even in this case, if the thickness of the mask frame 11A is 500 μm or more and the difference in the coefficients of linear expansion is 0.7 × 10⁻⁶ as mentioned above. -6 Below a certain temperature, the deformation of the mask 12 can be suppressed to a degree that suppresses the deflection of the mask 12 that engages with the mask frame 11A and maintains the positional accuracy of the mask aperture 12H. Furthermore, if the thickness of the mask frame 11B is 20 μm or more and the difference in their coefficients of linear expansion is 0.4 × 10⁻⁶, the deformation can be further suppressed to a degree that suppresses the deflection of the mask 12 that engages with the mask frame 11A and maintains the positional accuracy of the mask aperture 12H. -6 Below / ℃, the deformation of the mask template 12 can be suppressed to the extent that the deflection of the mask template 12 engaged with the mask frame 11B can be suppressed and the positional accuracy of the mask hole 12H can be maintained.

[0144] [Manufacturing method of display device]

[0145] Reference Figure 17 The manufacturing method of the display device is explained.

[0146] The method for manufacturing a display device includes the following steps: forming a pattern on a vapor deposition object S using vapor deposition masks 10A and 10B manufactured by a method for manufacturing vapor deposition masks 10A and 10B. Hereinafter, an example of a vapor deposition apparatus and the steps for forming the pattern will be described with reference to the accompanying drawings.

[0147] like Figure 17 As shown, the vapor deposition apparatus 30 includes a receiving tank 31 for accommodating vapor deposition masks 10A and 10B and the vapor deposition target S. The receiving tank 31 is configured to hold the vapor deposition target S and the vapor deposition masks 10A and 10B at predetermined positions within the receiving tank 31. A holding portion 32 for holding the vapor deposition material Mvd and a heating portion 33 for heating the vapor deposition material Mvd are located within the receiving tank 31. The vapor deposition material Mvd held by the holding portion 32 is, for example, an organic light-emitting material. The receiving tank 31 is positioned such that the vapor deposition masks 10A and 10B are located between the vapor deposition target S and the holding portion 32, and the vapor deposition masks 10A and 10B are opposite to the holding portion 32, thus accommodating the vapor deposition target S within the receiving tank 31. The vapor deposition masks 10A and 10B are arranged within the receiving tank 31 with their back surfaces 12R of the mask template 12 in close contact with the vapor deposition target S.

[0148] In the pattern-forming process, the vapor-deposited material Mvd is heated by the heating unit 33, thereby vaporizing or sublimating the vapor-deposited material Mvd. The vaporized or sublimated vapor-deposited material Mvd adheres to the vapor-deposited object S through the mask holes 12H of the mask templates 12 of the vapor-deposited masks 10A and 10B. Thus, an organic layer with a shape corresponding to the shape and position of the mask holes 12H of the vapor-deposited masks 10A and 10B is formed on the vapor-deposited object S. Furthermore, the vapor-deposited material Mvd can also be a metal material used for forming the pixel electrodes of the pixel circuitry in the display layer.

[0149] [Experimental Example]

[0150] Reference Figure 18 The experimental examples are explained.

[0151] [Experimental Example 1]

[0152] Prepare the following Invar alloy metal plate: 40 μm thick, square with one side length of 152.4 mm, and a coefficient of linear expansion of 1.2 × 10⁻⁶ over a temperature range of 25°C to 100°C. -6 / ℃. In addition, a high-silicate glass substrate (Corning Corporation, VYCOR7913) was prepared as follows: it has a thickness of 1.9 mm, a square shape with one side length of 152.4 mm, and a coefficient of linear expansion of 0.8 × 10⁻⁶ over a temperature range of 25℃ to 100℃. -6 / ℃. First, an acidic etching solution was used to etch the entire surface of one side of the metal plate. This reduced the thickness of the metal plate by 17.5 μm. Then, CB treatment was performed on the etched surface of the metal plate (the target surface) and the target surface of the glass substrate, thereby attaching a Si-based compound to each target surface. In addition, a square polyimide layer (manufactured by Toray DuPont, Ltd., Cappton 30EN (Cappton is a registered trademark)) with a thickness of 7.5 μm and a side length of 152.4 mm was prepared.

[0153] The polyimide layer was held between a metal plate and a glass substrate in contact with the surface of the object to which the polyimide layer had undergone CB treatment. Then, the metal plate, polyimide layer, and glass substrate were heat-pressed together. During heat pressing, the pressure was set to 4 MPa, the temperature to 250°C, and the pressing time to 10 minutes.

[0154] Then, using an acidic etching solution, the side of the metal plate opposite to the surface bonded to the polyimide layer was etched. This reduced the thickness of the metal plate by 17.5 μm, bringing the total thickness to 5 μm. Next, after forming a resist mask on the surface of the metal plate, multiple mask holes were formed in the metal plate using an acidic etching solution. Thus, from a viewpoint opposite the surface of the metal plate, square mask holes with a side width of 20 μm were formed at a spacing of 40 μm. Furthermore, multiple mask holes were formed in a mask region with a width of 80 mm and a length of 130 mm in the metal plate, while no mask holes were formed in the peripheral region surrounding the mask region. Hereinafter, the width direction will also be referred to as the X direction, and the length direction will also be referred to as the Y direction. The distance between the centers of the mask holes at each end in the X direction was set to 80 mm, and the distance between the centers of the mask holes at each end in the Y direction was set to 130 mm. Furthermore, the mask area was set on the metal plate such that the center of the metal plate coincided with the center of the mask area, and each side of the metal plate was parallel to one side of the mask area.

[0155] Furthermore, through holes were formed as alignment marks for positioning the metal plate relative to the frame. A rectangular reference region with a length of 90 mm in the X direction and 140 mm in the Y direction was established. The reference region was also positioned so that its center coincided with the center of the mask region. Then, four through holes with a diameter of 50 μm were formed at positions slightly outside the reference region. Each through hole was formed 50 μm outside the reference region in both the X and Y directions, respectively.

[0156] On the other hand, a rectangular Invar alloy metal plate with a thickness of 20 μm and a width of 100 mm and a length of 180 mm was prepared as the frame. Next, an opening with a width of 90 mm and a length of 140 mm was formed on the metal plate by wet etching. Thus, a frame with a thickness of 20 μm was obtained. Furthermore, when forming the opening on the metal plate, four alignment marks with a diameter of 30 μm were formed by half-etching. Each alignment mark was formed 50 μm outward in the X direction and 50 μm outward in the Y direction, respectively, relative to the four corners of the opening.

[0157] Next, the alignment marks on the metal plate were aligned with the alignment marks on the frame. Thus, the metal plate was aligned relative to the frame with the reference area of ​​the metal plate coinciding with the opening of the frame. Then, the mask was joined to the frame using laser welding. At this time, the entire circumferential area of ​​the mask was intermittently joined to the frame at 0.5 mm intervals. Furthermore, a fiber laser emitting light with a wavelength of 1070 nm to 1100 nm was used in the laser welding. Then, a laser beam with a wavelength of 355 nm was irradiated onto the glass substrate and the resin layer. At this time, viewed from the thickness direction of the glass substrate, the entire edge of the glass substrate was irradiated with laser light. Then, the glass substrate was peeled off from the polyimide layer. Then, the joint between the frame and the mask was immersed in a sodium hydroxide solution, thereby removing the resin layer from the mask. Thus, the vapor deposition mask of Experimental Example 1 was obtained.

[0158] [Experimental Example 2]

[0159] In Experiment 1, the glass substrate was changed to a quartz glass substrate (manufactured by Shin-Etsu Chemical Industry Co., Ltd., synthetic quartz SMS6009E5) with a thickness of 2.3 mm, a square shape with one side length of 152.4 mm, and a coefficient of linear expansion of 0.5 × 10⁻⁶ over a temperature range of 25°C to 100°C. -6 / ℃. Furthermore, in Experiment 1, the thickness of the frame was changed to 100 μm. Apart from these, the vapor deposition mask for Experiment 2 was obtained using the same method as in Experiment 1.

[0160] [Experimental Example 3]

[0161] In Experiment 2, the glass substrate was changed to a crystalline glass substrate (manufactured by Nippon Electric Glass Co., Ltd., Neo Serum N-0) (Neo Serum is a registered trademark): having a thickness of 1.1 mm, a square shape with one side length of 152.4 mm, and a coefficient of linear expansion of -0.1 × 10⁻⁶ over a temperature range of 25°C to 100°C. -6 / ℃. In addition, the vapor deposition mask of Experimental Example 3 was obtained by the same method as Experimental Example 2.

[0162] [Experimental Example 4]

[0163] In Experiment 3, the glass substrate was changed to have a linear expansion coefficient of 3.5 × 10⁻⁶ within a temperature range of 25°C to 100°C. -6 The glass substrate made of alkali-free glass at / ℃ (manufactured by Nippon Electric Glass Co., Ltd., OA-10G) was used, and the vapor deposition mask of Example 4 was obtained by the same method as in Example 3.

[0164] [Experimental Example 5]

[0165] In Experiment 3, the glass substrate was changed to have a linear expansion coefficient of -0.1 × 10⁻⁶ within a temperature range of 25°C to 100°C. -6 A glass substrate made of crystal glass at a temperature of / ℃ (manufactured by Nippon Electric Glass Co., Ltd., Neo Serum N-0). Furthermore, in Test Example 3, the metal plate was changed to have a coefficient of linear expansion of 4.3 × 10⁻⁶ within a temperature range of 25℃ to 100℃. -6 The substrate is made of an iron-nickel alloy containing 42% by mass nickel at a temperature of / ℃, i.e., alloy 42. Apart from these, the vapor deposition mask for Example 5 was obtained using the same method as in Example 3.

[0166] [Experimental Example 6]

[0167] In Experiment 1, the thickness of the frame was changed to 100 μm. Otherwise, the vapor deposition mask of Experiment 6 was obtained by the same method as in Experiment 1.

[0168] [Experimental Example 7]

[0169] In Experiment 2, the thickness of the frame was changed to 500 μm. Otherwise, the vapor deposition mask of Experiment 7 was obtained by the same method as in Experiment 2.

[0170] [Experimental Example 8]

[0171] In Experiment 1, the thickness of the frame was changed to 500 μm. Otherwise, the vapor deposition mask of Experiment 8 was obtained by the same method as in Experiment 1.

[0172] [Experimental Example 9]

[0173] In Experiment 2, the thickness of the frame was changed to 1500 μm. Otherwise, the vapor deposition mask of Experiment 9 was obtained by the same method as in Experiment 2.

[0174] [Experimental Example 10]

[0175] In Experiment 3, the thickness of the frame was changed to 1500 μm. Otherwise, the vapor deposition mask of Experiment 10 was obtained by the same method as in Experiment 3.

[0176] [Experimental Example 11]

[0177] In Experiment 4, the thickness of the frame was changed to 1500 μm. Otherwise, the vapor deposition mask of Experiment 11 was obtained by the same method as in Experiment 4.

[0178] [Experimental Example 12]

[0179] In Experiment 5, the thickness of the frame was changed to 1500 μm. Otherwise, the vapor deposition mask of Experiment 12 was obtained by the same method as in Experiment 5.

[0180] [Experimental Example 13]

[0181] In Experiment 1, the thickness of the frame was changed to 1500 μm. Otherwise, the vapor deposition mask of Experiment 13 was obtained by the same method as in Experiment 1.

[0182] [Evaluation Method]

[0183] The vapor deposition masks of each test case were observed visually. The case where the mask template did not flex was marked as "○", and the case where it flexed was marked as "×".

[0184] like Figure 18As shown, using a measuring device (Nikon Corporation, CNC image measuring system VMR-6555), the first width X1 of the first short side, the second width X2 of the second short side, the first length Y1 of the first long side, and the second length Y2 of the second long side of each mask region were measured. Furthermore, the first width X1 and the second width X2 were each set as the distance between the centers of the mask holes at each end along the directions extending from the first and second short sides, respectively. Similarly, the first length Y1 and the second length Y2 were each set as the distance between the centers of the mask holes at each end along the directions extending from the first and second long sides, respectively. The distance Yc between the center of the first short side and the center of the second short side, and the distance Xc between the center of the first long side and the center of the second long side were also measured.

[0185] Then, using the following formulas, calculate the offset ΔX in the X direction relative to the design value, the offset ΔY in the Y direction relative to the design value, the offset ΔXc of the center in the X direction relative to the design value, and the offset ΔYc of the center in the Y direction relative to the design value. Set "○" to cases where all four values ​​have an absolute value of less than 5 μm, and set "×" to cases where the absolute value of at least one value is greater than 5 μm.

[0186] ΔX={(X1-80000)+(X2-80000)} / 2

[0187] (Unit: μm)

[0188] ΔY={(Y1-130000)+(Y2-130000)} / 2

[0189] (Unit: μm)

[0190] ΔXc = Xc - 80000 (unit: μm)

[0191] ΔYc=Yc-130000 (unit: μm)

[0192] The calculation results for each value are shown in Table 1 below. Furthermore, for each offset ΔX, ΔY, ΔXc, and ΔYc, negative values ​​indicate that the measured value is less than the design value, and positive values ​​indicate that the measured value is greater than the design value.

[0193] [Table 1]

[0194]

[0195] As shown in Table 1, in Test Example 1, visual observation confirmed that the mask did not flex. Furthermore, in Test Example 1, it was confirmed that the absolute values ​​of all offsets ΔX, ΔY, ΔXc, and ΔYc were all below 5 μm.

[0196] In Test Examples 2 to 5, regardless of the difference between the linear expansion coefficients of the glass substrate and the metal plate, visual observation confirmed that the photomask flexed. Furthermore, in Test Examples 2 to 5, it was confirmed that at least one absolute value of each offset ΔX, ΔY, ΔXc, and ΔYc was greater than 5 μm. As can be clearly seen from the measurement results of Test Examples 2 to 5, the greater the difference between the linear expansion coefficients of the glass substrate and the metal plate, the greater the offsets ΔX, ΔY, ΔXc, and ΔYc become. In contrast, in Test Example 6, visual observation confirmed that the photomask did not flex. Furthermore, in Test Example 6, it was confirmed that the absolute values ​​of all offsets ΔX, ΔY, ΔXc, and ΔYc were all less than 5 μm.

[0197] Furthermore, in Test Examples 7 and 8, visual observation confirmed that the mask did not flex. Additionally, in Test Examples 7 and 8, it was confirmed that the absolute values ​​of all offsets ΔX, ΔY, ΔXc, and ΔYc were all below 5 μm.

[0198] In Test Examples 9, 10, and 13, visual observation confirmed that the photomask did not flex. Furthermore, in Test Examples 9, 10, and 13, the absolute values ​​of all offsets ΔX, ΔY, ΔXc, and ΔYc were all below 5 μm. In contrast, in Test Examples 11 and 12, visual observation confirmed that the photomask flexed. Furthermore, in Test Examples 11 and 12, the absolute values ​​of all offsets ΔX, ΔY, ΔXc, and ΔYc were all greater than 5 μm.

[0199] Based on these results, it was confirmed that, with a frame thickness of 20 μm, the absolute value of the difference between the linear expansion coefficients of the glass substrate and the metal plate is 0.4 × 10⁻⁶. -6 Below a certain temperature, mask deflection and mask aperture positional displacement can be suppressed. Furthermore, it was confirmed that with a frame thickness of 500 μm, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 0.7 × 10⁻⁶. -6 Below a certain temperature, mask deflection and mask aperture positional displacement can be suppressed. Furthermore, it was confirmed that with a frame thickness of 1500 μm, the absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate is 1.3 × 10⁻⁶. -6 Below / ℃, it can suppress the deflection of the mask template and the positional displacement of the mask holes.

[0200] Furthermore, under the evaporation mask with a square frame, when the thickness of the frame and the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the metal plate are the same as those of the evaporation mask in this test example, it was confirmed that there is a tendency to have lower evaluation results than those of each test example.

[0201] As explained above, according to one embodiment of the vapor deposition mask manufacturing method, the display device manufacturing method, and the vapor deposition mask intermediate, the following effects can be obtained.

[0202] (1) The mask 12 is supported by the glass substrate 22b during the manufacturing of the vapor deposition masks 10A and 10B, and is supported by the mask frames 11A and 11B in the vapor deposition masks 10A and 10B, thus improving the processability of the mask 12.

[0203] (2) The mask frame 11A has lattice-shaped dividing elements 11Ab, thus improving the rigidity of the mask frame 11A itself compared to a frame with a square frame shape. Then, a mask template 12 is directly joined around each opening 11Ac of the rigid mask frame 11A, thus suppressing the deflection of the mask template 12 compared to a structure supporting each mask template 12 having a straight line extending in a one-dimensional direction along the width of the strip-shaped mask template. As a result, the positional accuracy of the pattern formed on the vapor-deposited object S is improved.

[0204] (3) When the mask frame 11A has a thickness of 500 μm or more, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 is 0.7 × 10⁻⁶. -6 Below / ℃, the positional accuracy of the pattern relative to the vapor-deposited object S is improved.

[0205] (4) When the mask frame 11B has a thickness of 20 μm or more, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 is 0.4 × 10⁻⁶. -6 Below / ℃, the positional accuracy of the pattern formed on the vapor-deposited object S is improved.

[0206] (5) Since the linear expansion coefficient of the glass substrate 22b is less than that of the metal plate 21, the change of the position of the mask 12 relative to the mask frames 11A and 11B is suppressed by the mask frames 11A and 11B, and the deflection of the mask 12 is suppressed.

[0207] Furthermore, the above-described embodiments can be modified as follows.

[0208] [Example 1 of a vapor deposition mask]

[0209] In the first example of the vapor deposition mask 10A, the vapor deposition mask 10A may also be mounted on a support frame that supports the vapor deposition mask 10A. In this case, the vapor deposition mask 10A is mounted on the vapor deposition apparatus while mounted on the support frame.

[0210] [Manufacturing method of vapor deposition mask]

[0211] • The thickness of the mask frame 11A of the vapor deposition mask 10A can also be less than 500 μm. In this case, as long as the mask frame 11A has a structure with lattice-shaped dividing elements 11Ab within the area surrounded by the frame-shaped portion 11Aa, the effect described above (2) can be obtained. Furthermore, as long as the thickness of the mask frame 11A is 20 μm or more, and the absolute value of the difference between the coefficient of linear expansion of the glass substrate 22b and the coefficient of linear expansion of the metal plate 21 is 0.4 × 10⁻⁶, the effect is satisfactory. -6 At temperatures below ℃, the desired effect (4) can be achieved.

[0212] The thickness of the mask frame 11B of the vapor deposition mask 10B can be less than 20 μm, provided it has higher rigidity than the mask template 12. Furthermore, the thickness of the mask frame 11B can be 500 μm or more; in this case, the absolute value of the difference between the linear expansion coefficient of the glass substrate 22b and the linear expansion coefficient of the metal plate 21 is 0.7 × 10⁻⁶. -6 At temperatures below ℃, the desired effect (3) can be achieved.

[0213] Explanation of symbols

[0214] 10A, 10B: Evaporation masks

[0215] 10Aa: Joint part

[0216] 11A, 11B: Mask frame

[0217] 11Aa: Frame-like part

[0218] 11Ab: Dividing Elements

[0219] 11Ac, 11Bc: Opening

[0220] 11AF, 11BF, 12F, 21F: Surface

[0221] 11AR, 11BR, 12R, 21R: Back

[0222] 12: Mask template

[0223] 12a: Mask area

[0224] 12b: Surrounding Area

[0225] 12H: Mask hole

[0226] 20: Substrate

[0227] 21: Metal plate

[0228] 22: Support body

[0229] 22a: Resin layer

[0230] 22b: Glass substrate

[0231] H1: Surface opening

[0232] H2: Rear opening

[0233] S: Evaporation object

Claims

1. An intermediate for vapor deposition mask, comprising: Multiple mask templates made of iron-nickel alloy, including multiple mask holes, having a first surface and a second surface, the second surface being the side opposite to the first surface, for contacting the object to be vapor-deposited; The mask frame has higher rigidity than the aforementioned mask template and has multiple openings. The mask frame is engaged with the aforementioned first surface of the aforementioned mask template in such a way that each mask template covers one of the aforementioned openings. Multiple resin layers, each resin layer being bonded to the second surface of the aforementioned mask template; as well as Multiple glass substrates, each bonded to a resin layer. The linear expansion coefficient of each glass substrate is less than the linear expansion coefficient of the mask plate laminated to the glass substrate, and the absolute value of the difference between the linear expansion coefficient of each glass substrate and the linear expansion coefficient of the mask plate laminated to the glass substrate is 1.3 x 10 -6 / °C or less. The aforementioned multiple photomasks are obtained by etching multiple metal plates made of an iron-nickel alloy, which are respectively bonded to the aforementioned multiple glass substrates, and forming the aforementioned multiple photomask holes in the metal plates. With the plurality of glass substrates, the plurality of resin layers, and the plurality of photomasks bonded one-to-one with each other, the plurality of photomasks are individually bonded to the mask frame having the plurality of openings in such a manner that one photomask covers one opening.

2. The vapor deposition mask intermediate as described in claim 1, wherein, The absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the photomask is 0.7 × 10⁻⁶. -6 / ℃ below, The aforementioned mask frame has a thickness of over 500 μm.

3. The vapor deposition mask intermediate as described in claim 1, wherein, The absolute value of the difference between the linear expansion coefficient of the glass substrate and the linear expansion coefficient of the photomask is 0.4 × 10⁻⁶. -6 / ℃ below, The aforementioned mask frame has a thickness of more than 20 μm.

4. The vapor deposition mask intermediate as described in any one of claims 1 to 3, wherein, The aforementioned glass substrate is formed by selecting any one of the following groups: alkali-free glass, quartz glass, crystal glass, borosilicate glass, high-silicate glass, porous glass, and soda-lime glass.

5. The vapor deposition mask intermediate as described in claim 1, wherein, The aforementioned mask frame has: a frame-shaped portion located at the outer edge of the mask frame, surrounding the vapor-deposited object; dividing elements located within the area surrounded by the frame-shaped portion, having a grid-like shape; and the aforementioned plurality of openings, divided by the dividing elements.

Images