Semiconductor sensor data processing method and system

Abstract

The embodiment of the present disclosure discloses a semiconductor sensor data processing method and system. The method comprises the following steps: constructing a first model, a second model, a third model and a fourth model; collecting the concentration of the leaked gas in the target area to obtain a plurality of sampling values, wherein the plurality of sampling values are continuously changing data in a preset time period; determining whether the plurality of sampling values show an upward trend; if not, obtaining display data according to the fourth model; if yes, determining whether the plurality of sampling values are all less than a preset threshold; if yes, obtaining display data according to the first model; if not, determining whether the plurality of sampling values are all not less than the preset threshold; if yes, obtaining display data according to the second model; if not, obtaining display data according to the third model; the method can be applied to different detection environments, realize high-precision detection of the leaked gas and high-efficiency response speed, and effectively improve the performance of the detection equipment and the user experience.

Description

Technical Field

[0001] This disclosure relates to the field of gas detection technology, and in particular to a semiconductor sensor data processing method and system. Background Technology

[0002] Natural gas and liquefied petroleum gas are now widely used, and their main component is flammable and explosive methane (CH4) gas. When gas leaks occur, they can easily cause fires and explosions, resulting in casualties and significant property damage.

[0003] Existing technologies typically employ semiconductor methane sensors for detection, primarily used to detect leaks in indoor gas pipelines and outdoor gas facilities. Applicable detection targets include: 1) visible pipelines in buildings; 2) underground pipeline manholes; 3) indoor gas wiring; and 4) pipeline connections, such as pipes, valves, connectors, flanges, and pressure regulators. However, this type of sensor is limited in variety and has relatively low accuracy, especially for low-concentration leaks of gas, where it cannot be effectively measured.

[0004] The sensors used in the prior art exhibit significant voltage changes when subjected to external interference, immediately displaying data and affecting customer judgment. However, if the sensor is set to only trigger an alarm when the measured voltage exceeds a certain threshold, the sensor becomes less sensitive. Furthermore, when moving from a low-concentration environment to a normal air environment, the sensor's displayed data decreases slowly, impacting user experience and hindering rapid response. Summary of the Invention

[0005] In view of this, the present disclosure provides a semiconductor sensor data processing method and system that can solve the problems of inaccuracy when measuring low-concentration gases, inapplicability to all detection environments, and inability to guarantee high sensitivity in different environments by traditional semiconductor sensors.

[0006] In a first aspect, embodiments of this disclosure provide a semiconductor sensor data processing method, the method comprising:

[0007] Construct the first model, the second model, the third model, and the fourth model;

[0008] The concentration of leaked gas in the target area is collected to obtain several sample values; these sample values ​​are data that change continuously within a preset time period.

[0009] Determine whether the sampled values ​​show an upward trend; if not, obtain the display data according to the fourth model.

[0010] If yes, determine whether all of the sampled values ​​are less than a preset threshold; if yes, obtain display data according to the first model; if no, determine whether all of the sampled values ​​are not less than a preset threshold; if yes, obtain display data according to the second model; if no, obtain display data according to the third model.

[0011] Optionally, the leaked gas is methane; the preset threshold is 11000.

[0012] Optionally, if so, obtaining display data based on the first model includes:

[0013] Obtain the rising difference between two adjacent sampled values;

[0014] Determine whether the rising difference is less than the preset rising interval value. If yes, determine that the increment multiplier is 0; if no, determine that the increment multiplier is the integer quotient of the rising difference and the preset rising interval value.

[0015] The display data is obtained based on the incrementing multiplier; the display data is the product of the incrementing multiplier and the first preset display interval.

[0016] Optionally, the preset rising interval value is 70;

[0017] The first preset display interval is 5.

[0018] Optionally, if so, obtaining display data based on the second model includes:

[0019] Determine whether the current sampled value meets the first sampling threshold range. If so, determine that the second model is the first curve model, and obtain the display data based on the first curve model. Wherein, the first sampling threshold range is [11000, 11590), the first curve model is: y = (sampled value - 11000) × 0.169, and y is the display data.

[0020] If not, determine whether the current sampled value meets the second sampling threshold range. If yes, determine that the second model is the second curve model, and obtain the display data based on the second curve model; wherein, the second sampling threshold range is [11590, 13300), the second curve model is: y = (sampled value - 11590) × 0.526 + 100, and y is the display data;

[0021] If not, determine whether the current sampled value meets the third sampling threshold range. If yes, determine that the second model is the third curve model, and obtain the display data based on the third curve model; wherein, the third sampling threshold range is: [13300, 14068), the third curve model is: y = (sampled value - 13300) × 11.8 + 1000, and y is the display data;

[0022] If not, determine whether the current sampled value meets the fourth sampling threshold range. If yes, determine that the second model is the fourth curve model, and obtain the display data based on the fourth curve model. Wherein, the fourth sampling threshold range is [14068, 14210), and the fourth curve model is: y = (sampled value - 14068) × 95 + 10000, where y is the display data.

[0023] If not, determine whether the current sampled value meets the fifth sampling threshold range. If yes, determine that the second model is the fifth curve model, and obtain the display data based on the fifth curve model. The fifth sampling threshold range is 14210, +∞, and the fifth curve model is y = 22000, where y is the display data.

[0024] Optionally, if not, obtaining display data based on the third model includes:

[0025] The sampled values ​​are divided into a first group of data and a second group of data; wherein the sampled values ​​contained in the first group of data are all less than a preset threshold, and the remaining sampled values ​​constitute the second group of data;

[0026] For the first set of data, the display data is obtained according to the first model;

[0027] Obtain the first actual difference between the first sampled value in the second set of data and the last sampled value in the first set of data;

[0028] Obtain the second actual difference between the first two sampled values ​​in the second set of data;

[0029] Determine whether the second actual difference is less than the first actual difference.

[0030] If so, the increment multiplier is determined to be the integer quotient of the first actual difference and the preset rising interval; based on the increment multiplier, display data is obtained, and the display data is the product of the increment multiplier and the first preset display interval;

[0031] If not, obtain the display data based on the second model.

[0032] Optionally, if not, obtaining display data based on the fourth model includes:

[0033] Determine whether the decrease time of the sampled value is within a preset time. If not, display the data in a preset interval until the displayed data is 0.

[0034] If yes, determine whether all of the sampled values ​​are less than a preset threshold; if no, divide the sampled values ​​into a third group of data and a fourth group of data; wherein the sampled values ​​contained in the third group of data are all not less than the preset threshold, and the remaining sampled values ​​constitute the fourth group of data.

[0035] The sampled values ​​in the third set of data obtain corresponding display data according to the second model; if the display data corresponding to the sampled value in the third set of data is 0, then the display data corresponding to all sampled values ​​after that sampled value is 0; or, if the display data corresponding to the sampled values ​​in the third set of data is greater than 0, then the display data corresponding to the sampled values ​​in the fourth set of data is 0.

[0036] If so, obtain the decrease difference between the current sampled value and the sampled value at the previous moment, and determine whether the decrease difference is less than the preset decrease interval value. If so, determine that the decrease multiple is 0; if not, determine that the decrease multiple is the integer quotient of the decrease difference and the preset decrease interval value.

[0037] Display data is obtained based on the decreasing multiplier, and the display data is the product of the decreasing multiplier and the second preset display interval.

[0038] Optionally, the preset falling interval value is less than the preset rising interval value.

[0039] Optionally, the preset time is 0.5s or 0.9s;

[0040] The preset interval is 5;

[0041] The preset descent interval value is 50;

[0042] The second preset display interval is 5.

[0043] Secondly, embodiments of this disclosure also provide a semiconductor sensor data processing system, comprising:

[0044] The module is configured to build the first model, the second model, the third model, and the fourth model;

[0045] The acquisition module is configured to acquire the concentration of leaked gas in the target area and obtain several sample values; the several sample values ​​are data that change continuously within a preset time period.

[0046] The first judgment module is configured to determine whether the sampled values ​​show an upward trend; if not, it obtains display data according to the fourth model.

[0047] The second judgment module is configured to determine whether all of the sampled values ​​are less than a preset threshold when the sampled values ​​show an upward trend; if so, it obtains display data according to the first model.

[0048] The third judgment module is configured to determine whether the sampled values ​​are not all less than a preset threshold. If so, the display data is obtained according to the second model.

[0049] The fourth judgment module is configured such that none of the sampled values ​​are less than a preset threshold, and the displayed data is obtained according to the third model.

[0050] Thirdly, this disclosure also provides an electronic device that adopts the following technical solution:

[0051] The electronic device includes:

[0052] At least one processor; and,

[0053] A memory communicatively connected to the at least one processor; wherein,

[0054] The memory stores instructions that can be executed by the at least one processor, which, when executed, enable the at least one processor to perform any of the semiconductor sensor data processing methods described above.

[0055] Fourthly, embodiments of this disclosure also provide a computer-readable storage medium storing computer instructions for causing a computer to perform any of the semiconductor sensor data processing methods described above.

[0056] The semiconductor sensor data processing method provided in this disclosure, through the construction of a first model, a second model, a third model, and a fourth model, can be applied to different detection environments, achieving high-precision detection of leaked gas and efficient response speed, effectively improving the performance of detection equipment and user experience.

[0057] The above description is merely an overview of the technical solution disclosed herein. In order to better understand the technical means of this disclosure and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0058] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0059] Figure 1 This is a logic flowchart of a specific embodiment of the semiconductor sensor data processing method provided in this disclosure.

[0060] Figure 2 for Figure 1 The flowchart shows the method for obtaining display data based on the first model.

[0061] Figure 3 for Figure 1 The flowchart shows the method for obtaining display data based on the second model.

[0062] Figure 4 for Figure 1 The flowchart shows the method for obtaining display data based on the third model.

[0063] Figure 5 for Figure 1 The flowchart shows the method for obtaining display data based on the fourth model.

[0064] Figure 6 A schematic block diagram of a semiconductor sensor data processing system provided in an embodiment of this disclosure.

[0065] Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this disclosure. Detailed Implementation

[0066] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0067] It should be understood that the following specific examples illustrate the implementation of this disclosure, and those skilled in the art can easily understand other advantages and effects of this disclosure from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. This disclosure can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this disclosure. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0068] It should be noted that various aspects of embodiments within the scope of the appended claims are described below. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any particular structure and / or function described herein is merely illustrative. Based on this disclosure, those skilled in the art will understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects set forth herein can be used to implement the device and / or practice the method. Additionally, this device and / or method can be implemented using structures and / or functionalities other than one or more of the aspects set forth herein.

[0069] It should also be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of this disclosure. The drawings only show the components related to this disclosure and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0070] Furthermore, specific details are provided in the following description to facilitate a thorough understanding of the examples. However, those skilled in the art will understand that the described aspects can be practiced without these specific details.

[0071] Reference Figure 1 The first aspect of this application discloses a semiconductor sensor data processing method, which includes the following steps:

[0072] S100, construct the first model, the second model, the third model, and the fourth model;

[0073] S200 collects the concentration of leaked gas in the target area, obtaining several sample values. Among them, the sample values ​​are data that change continuously within a preset time period.

[0074] S300, determine whether several sampled values ​​show an upward trend. If yes, determine whether several sampled values ​​are all less than a preset threshold. If yes (i.e., several sampled values ​​are all less than the preset threshold), obtain display data according to the first model. If no (i.e., several sampled values ​​are not all less than the preset threshold), determine whether several sampled values ​​are not less than the preset threshold. If yes (i.e., several sampled values ​​are not less than the preset threshold), obtain display data according to the second model. If no (i.e., several sampled values ​​are not all less than the preset threshold), obtain display data according to the third model.

[0075] If not (i.e., some sampled values ​​do not show an upward trend), the displayed data is obtained according to the fourth model.

[0076] Current sensor technology commonly uses a sliding rheostat as the input port to connect the sensor and power supply to detect changes in the concentration of specific gases in the environment. The sensor output port is connected to a microcontroller, which detects the output voltage to determine the concentration change and displays the concentration value based on a pre-set voltage-concentration curve relationship. However, for the detection of low-concentration gases, the existing curve relationship cannot accurately display the concentration data, resulting in inaccurate or non-displayable measurement data. The semiconductor sensor data processing method provided in this disclosure, through the constructed first, second, third, and fourth models, can be applied to different detection environments, achieving high-precision detection of leaked gases and efficient response speed, effectively improving the performance of detection equipment and user experience.

[0077] Reference Figure 2 The specific methods for obtaining display data based on the first model include:

[0078] Obtain the increase difference between the current sampled value and the sampled value at the previous moment;

[0079] Determine whether the increase difference is less than the preset increase interval value. If yes, determine that the increment multiplier is 0; otherwise, determine that the increment multiplier is the integer quotient of the increase difference and the preset increase interval value.

[0080] Display data corresponding to the sampled value is obtained based on the increment multiplier. The display data is the product of the increment multiplier and the first preset display interval.

[0081] When the leaked gas to be detected is methane, the preset rise interval is 70, the first preset display interval is 5, and the increment multiplier is N1.

[0082] Specifically, when several sampled values ​​are 7000, 7140, and 8200 respectively, when it is necessary to obtain the display data corresponding to the sampled value 7140, the rise difference between 7140 and 7000 is 140. This rise difference is not less than the preset rise interval value. The corresponding increment value N1 is the integer quotient of 140 divided by 70, that is, N1 is 2. The display data is the product of 5 and 2. That is, when the sampled value is 7140, the display data output by the semiconductor sensor is 10.

[0083] When it is necessary to obtain the display data corresponding to the sample value 7140, the difference between 8200 and 7140 is 60. This difference is less than the preset increase interval value, and the corresponding increment value N1 is 0. The display data is the product of 5 and 0. That is, when the sample value is 8200, although there is an increase compared to the sample value at the previous moment, the output display data is 0.

[0084] Reference Figure 3 The specific methods for obtaining display data based on the second model include:

[0085] Determine whether the current sampled value meets the first sampling threshold range. If so, determine that the second model is the first curve model, and obtain the corresponding display data based on the first curve model.

[0086] The first sampling threshold range is [11000, 11590), and the first curve model is: y = (sample value - 11000) × 0.169, where y is the corresponding display data.

[0087] If not, determine whether the current sampled value meets the second sampling threshold range. If so, determine that the second model is the second curve model, and obtain the corresponding display data based on the second curve model.

[0088] The second sampling threshold range is [11590, 13300), and the second curve model is: y = (sample value - 11590) × 0.526 + 100, where y is the corresponding display data.

[0089] If not, determine whether the current sampled value meets the third sampling threshold range. If so, determine that the second model is the third curve model, and obtain the corresponding display data based on the third curve model.

[0090] The third sampling threshold range is [13300, 14068), and the third curve model is: y = (sample value - 11000) × 11.8 + 1000, where y is the corresponding display data.

[0091] If not, determine whether the current sampled value meets the fourth sampling threshold range. If so, determine that the second model is the fourth curve model, and obtain the corresponding display data based on the fourth curve model.

[0092] The fourth sampling threshold range is [14068, 14210), and the fourth curve model is: y = (sample value - 11000) × 95 + 10000, where y is the corresponding display data.

[0093] If not, determine whether the current sampled value meets the fifth sampling threshold range. If so, determine that the second model is the fifth curve model, and obtain the corresponding display data based on the fifth curve model.

[0094] The fifth sampling threshold range is [14210, +∞), and the fifth curve model is y = 22000, where y is the corresponding display data.

[0095] Reference Figure 4 The specific methods for obtaining display data based on the third model include:

[0096] Several sampled values ​​are divided into a first group of data and a second group of data; wherein all sampled values ​​in the first group of data are less than a preset threshold, and the remaining sampled values ​​constitute the second group of data;

[0097] The display data corresponding to the sampled values ​​in the first set of data is obtained based on the first model;

[0098] Obtain the first actual difference between the first sampled value in the second set of data and the last sampled value in the first set of data; obtain the second actual difference between the first two sampled values ​​in the second set of data;

[0099] Determine whether the second actual difference is less than the first actual difference. If so, determine that the increment multiplier is the integer quotient of the first actual difference and the preset rising interval. Obtain the display data based on the increment multiplier, and the display data is the product of the increment multiplier and the first preset display interval.

[0100] If not, obtain the display data based on the second model.

[0101] When the leaked gas to be detected is methane, the preset rise interval is 70, and the first preset display interval is 5.

[0102] Specifically, when several sampled values ​​are 8000, 10000, 11000, 13000, and 14200 respectively, the first set of data is 8000 and 10000, and the second set of data is 11000, 13000, and 14200. The display data corresponding to the sampled values ​​in the first set of data is obtained according to the first model. Since there are both values ​​less than the preset threshold and values ​​not less than the preset threshold in this set of data, in order to ensure the rationality of the displayed data, prevent the data displayed by the semiconductor sensor from changing suddenly, and prevent users from thinking that the sensor is damaged during use, a third model is proposed. Through the method provided in this step, it is ensured that the data displayed by the semiconductor sensor is a normal change.

[0103] Further, the first actual difference △V1 between the first sampled value in the second set of data and the last sampled value in the first set of data is obtained, i.e., △V1 = 11000 - 10000 = 1000; the second actual difference △V2 between the first two sampled values ​​in the second set of data is obtained, △V2 = 13000 - 11000 = 2000. Since V2 > △V1, the display data is obtained according to the second model. Specifically, the current sampled value 13000 meets the second sampling threshold range, so the display data = (13000 - 11590) × 0.526 + 100 = 841.66.

[0104] For the sample value 14200, since it is greater than the preset threshold of 11000, the display data is obtained directly from the second model. That is, for the third sample value and subsequent sample values ​​in the second set of data, the display data can be obtained directly from the second model.

[0105] It should be noted that the sampled values ​​collected in this application either show an upward trend or a downward trend between any two sampled values. Therefore, this application only classifies them into these two types. For the downward trend, it generally applies to the following two situations: Situation 1: after gas leak detection, the air sensor is reset to 0; Situation 2: when the concentration of different areas is detected while the semiconductor sensor is not turned off, for example, the leak gas concentration in the next area is less than the leak gas concentration in the previous area.

[0106] Specifically, refer to Figure 5 The methods for obtaining display data based on the fourth model include:

[0107] Determine whether the time of decrease in the sampled value is within a preset time. If not, the displayed data corresponding to the current sampled value is displayed in descending order at preset intervals until the displayed data is 0.

[0108] Preferably, the preset time is [0.5s, 0.9s]; the preset interval is 5, that is, the displayed data is displayed in increments of 5 until it decreases to 0.

[0109] For example, for the sampled values ​​10000 and 9000, regardless of whether it is case one or case two, if the time to obtain 9000 exceeds 0.9s, the displayed data will be displayed in increments of 5 based on the data corresponding to the sampled value 10000, until the displayed value is 0.

[0110] In this scenario, the displayed data corresponding to the sample value of 10000 needs to be calculated based on the previously detected environment. Since the current sample value of 10000 is less than the threshold, the displayed data can be obtained according to the first model. For example, if the previous environmental sample values ​​were 8000 and 10000, the difference in their rise is 2000. The corresponding increment multiplier N1 is the integer quotient of 2000 divided by 70, i.e., N1 is 28. Therefore, the displayed data corresponding to the sample value of 10000 is: 28 × 5 = 140. The data displayed sequentially according to the set time descent are: 135, 130, ..., 0. This scheme effectively solves the problem of slow descent in traditional semiconductor sensors, significantly improving the user experience.

[0111] For example, for the sampled values ​​12000 and 10000, regardless of whether it is case one or case two, if the time to obtain 10000 exceeds 0.9s, the displayed data will be displayed in increments of 5 based on the data corresponding to the sampled value 12000, until the displayed value is 0.

[0112] In this case, the sampled value 12000 meets the second sampling threshold range, so the displayed data is: (12000-11590)×0.526+100=315.66; the data displayed next according to the set time decrease are: 310.66, 305.66, ..., 0.

[0113] If the sample value decreases within a preset time, determine if all sample values ​​are less than a preset threshold. If so, obtain the decrease difference between the current sample value and the sample value at the previous moment, and determine if the decrease difference is less than a preset decrease interval. If so, determine that the decrease multiplier is 0; otherwise, determine that the decrease multiplier is the integer quotient of the decrease difference and the preset decrease interval.

[0114] The display data is obtained based on the decreasing multiplier; the display data is the product of the decreasing multiplier and the second preset display interval.

[0115] Preferably, the preset time is [0.5s, 0.9s]; the preset interval is 5; the preset descent interval is 50; and the second preset display interval is 5.

[0116] The displayed data = N2 × 5, where N2 is the decreasing multiplier.

[0117] For example, for sampled values ​​9000, 8000, and 7960 (i.e., all sampled values ​​are less than the preset threshold of 11000), for the display data corresponding to sampled value 8000, the decrease difference of 1000 between 8000 (i.e., the current sampled value) and 9000 (i.e., the sampled value at the previous moment) is obtained. This decrease difference is greater than the preset decrease interval value. The decrease multiplier N2 is the integer quotient of 1000 divided by 50. N2 is 20. Then the display data is: 20 × 5 = 100, that is, the display data corresponding to sampled value 8000 is 100.

[0118] If the current sample value is 7960, the process of obtaining the display data corresponding to the sample value 7960 includes: obtaining the decrease difference 40 between 7960 (i.e., the current sample value) and 8000 (i.e., the sample value at the previous moment). This decrease difference is less than the preset decrease interval value, and the decrease multiple N2 is 0. Then the display data corresponding to the sample value 7960 is 0.

[0119] If not (i.e., not all sampled values ​​are less than the preset threshold), the sampled values ​​are divided into a third group of data and a fourth group of data; wherein, the sampled values ​​contained in the third group of data are not less than the preset threshold, and the remaining sampled values ​​constitute the fourth group of data.

[0120] The sampled values ​​in the third set of data are used to obtain the corresponding display data based on the second model;

[0121] Determine if there is a 0 in the display data corresponding to the sampled value in the third group of data. If so, the display data corresponding to all sampled values ​​after that sampled value will be 0; otherwise, the display data corresponding to the sampled value in the fourth group of data will be 0.

[0122] Specifically, if the displayed data corresponding to the current sample value in the third group of data is 0, then the displayed data corresponding to all sample values ​​after that sample value will be 0; or, if the displayed data corresponding to the sample values ​​in the third group of data is greater than 0, then the displayed data corresponding to the sample values ​​in the fourth group of data will be 0.

[0123] For example, for sample values ​​13000, 11000, and 10000 (i.e., there are sample values ​​not less than the preset threshold of 11000), for the third set of data (13000, 11000), the display data is obtained according to the second model (execute S320). The display data corresponding to the sample value 11000 when it meets the first sampling threshold range is: (11000-11000)×0.169=0. The display data corresponding to the sample values ​​after this sample value are also all 0.

[0124] For example, for sample values ​​14000, 12000, and 10000 (i.e., there are sample values ​​not less than the preset threshold of 11000), for the third set of data (13000, 12000), the display data is obtained according to the second model (execute S320). The sample value 12000 meets the second sampling threshold range, so the corresponding display data is: (12000-11590)×0.526+100=315.66; the sample value 14000 meets the third sampling threshold range, so the corresponding display data is: (14000-13300)×11.8+1000=9260; the display data corresponding to the sample values ​​in the third set of data are all greater than 0, so the display data corresponding to the sample values ​​in the fourth set of data are all 0. That is, the display data corresponding to the sample values ​​14000, 12000, and 10000 are 9260, 315.66, and 0, respectively.

[0125] Furthermore, when the leaked gas is hydrogen, the preset threshold changes from 11000 to 12500, and the corresponding sampling threshold range in the second model can be changed accordingly.

[0126] Reference Figure 6 The second aspect of this application discloses a semiconductor sensor data processing system, comprising:

[0127] The module is configured to build the first model, the second model, the third model, and the fourth model;

[0128] The acquisition module is configured to acquire the concentration of leaked gas in the target area and obtain several sample values; the several sample values ​​are data that change continuously within a preset time period.

[0129] The first judgment module is configured to determine whether the sampled values ​​show an upward trend; if not, it obtains display data according to the fourth model.

[0130] The second judgment module is configured to determine whether all of the sampled values ​​are less than a preset threshold when the sampled values ​​show an upward trend; if so, it obtains display data according to the first model.

[0131] The third judgment module is configured to determine whether the sampled values ​​are not all less than a preset threshold. If so, the display data is obtained according to the second model.

[0132] The fourth judgment module is configured such that none of the sampled values ​​are less than a preset threshold, and the displayed data is obtained according to the third model.

[0133] An electronic device according to embodiments of the present disclosure includes a memory and a processor. The memory is used to store non-transitory computer-readable instructions. Specifically, the memory may include one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may, for example, include random access memory (RAM) and / or cache memory. The non-volatile memory may, for example, include read-only memory (ROM), a hard disk, flash memory, etc.

[0134] The processor may be a central processing unit (CPU) or other processing unit with data processing and / or instruction execution capabilities, and may control other components in the electronic device to perform desired functions. In one embodiment of this disclosure, the processor is used to execute computer-readable instructions stored in the memory, causing the electronic device to perform all or part of the steps of the semiconductor sensor data processing methods of the foregoing embodiments of this disclosure.

[0135] Those skilled in the art will understand that, in order to solve the technical problem of how to achieve a good user experience, this embodiment may also include well-known structures such as communication buses and interfaces, and these well-known structures should also be included within the protection scope of this disclosure.

[0136] like Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present disclosure. It illustrates a structural schematic diagram suitable for implementing the electronic device in the embodiment of the present disclosure. Figure 7The electronic device shown is merely an example and should not be construed as limiting the functionality and scope of the embodiments disclosed herein.

[0137] like Figure 7 As shown, an electronic device may include a processor (e.g., a central processing unit, a graphics processing unit, etc.), which can perform various appropriate actions and processes based on a program stored in read-only memory (ROM) or a program loaded from a storage device into random access memory (RAM). The RAM also stores various programs and data required for the operation of the electronic device. The processor, ROM, and RAM are interconnected via a bus. Input / output (I / O) interfaces are also connected to the bus.

[0138] Typically, the following devices can be connected to the I / O interface: input devices, such as sensors or visual information acquisition devices; output devices, such as displays; storage devices, such as magnetic tapes or hard drives; and communication devices. Communication devices allow electronic devices to communicate wirelessly or wiredly with other devices (such as edge computing devices) to exchange data. Although Figure 7 Electronic devices with various devices are shown, but it should be understood that it is not required to implement or have all of the devices shown. More or fewer devices may be implemented or have alternatively.

[0139] In particular, according to embodiments of this disclosure, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, embodiments of this disclosure include a computer program product comprising a computer program carried on a non-transitory computer-readable medium, the computer program containing program code for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network via a communication device, or installed from a storage device, or installed from a ROM. When the computer program is executed by a processor, all or part of the steps of the semiconductor sensor data processing method of embodiments of this disclosure are performed.

[0140] For a detailed description of this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, which will not be repeated here.

[0141] A computer-readable storage medium according to embodiments of the present disclosure stores non-transitory computer-readable instructions. When these non-transitory computer-readable instructions are executed by a processor, all or part of the steps of the semiconductor sensor data processing methods described in the foregoing embodiments of the present disclosure are performed.

[0142] The aforementioned computer-readable storage media include, but are not limited to: optical storage media (e.g., CD-ROM and DVD), magneto-optical storage media (e.g., MO), magnetic storage media (e.g., magnetic tape or portable hard drive), media with built-in rewritable non-volatile memory (e.g., memory card), and media with built-in ROM (e.g., ROM cartridge).

[0143] For a detailed description of this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, which will not be repeated here.

[0144] The basic principles of this disclosure have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this disclosure are merely examples and not limitations, and should not be considered as essential features of each embodiment of this disclosure. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the scope of this disclosure to the necessity of employing the aforementioned specific details for implementation.

[0145] In this disclosure, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The block diagrams of devices, apparatuses, devices, and systems involved in this disclosure are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as "comprising," "including," "having," etc., are open-ended terms meaning "including but not limited to," and are used interchangeably with them. The terms "or" and "and" as used herein refer to the terms "and / or," and are used interchangeably with them unless the context clearly indicates otherwise. The term "such as" as used herein refers to the phrase "such as but not limited to," and is used interchangeably with it.

[0146] Additionally, as used herein, the “or” used in a list of items beginning with “at least one” indicates a separate list, such that a list of, for example, “at least one of A, B, or C” means A or B or C, or AB or AC or BC, or ABC (i.e., A and B and C). Furthermore, the word “exemplary” does not imply that the described example is preferred or better than other examples.

[0147] It should also be noted that in the systems and methods of this disclosure, the components or steps can be decomposed and / or recombined. These decompositions and / or recombinations should be considered as equivalent solutions to this disclosure.

[0148] Various changes, substitutions, and modifications can be made to the technology described herein without departing from the teachings defined by the appended claims. Furthermore, the scope of the claims of this disclosure is not limited to the specific aspects of the processes, machines, manufactures, events, means, methods, and actions described above. Currently existing or later-developed processes, machines, manufactures, events, means, methods, or actions that perform substantially the same function or achieve substantially the same result as the corresponding aspects described herein can be utilized. Therefore, the appended claims include such processes, machines, manufactures, events, means, methods, or actions within their scope.

[0149] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of this disclosure. Therefore, this disclosure is not intended to be limited to the aspects shown herein, but rather to be carried out within the widest scope consistent with the principles and novel features disclosed herein.

[0150] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this disclosure to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations therein.

Claims

1. A semiconductor sensor data processing method, characterized by, The method comprises: constructing a first model, a second model, a third model and a fourth model; collecting the concentration of the target area leaking gas to obtain a plurality of sampling values; the plurality of sampling values are continuously changing data within a preset time period; determining whether the plurality of sampling values show an upward trend, and if not, obtaining display data according to the fourth model; if yes, determining whether the plurality of sampling values are all less than a preset threshold value; if yes, obtaining display data according to the first model, and if not, determining whether the plurality of sampling values are all not less than the preset threshold value; if yes, obtaining display data according to the second model, and if not, obtaining display data according to the third model; the yes, obtaining display data according to the first model, comprises: obtaining an upward difference value of adjacent two sampling values; determining whether the upward difference value is less than a preset upward interval value, if yes, determining that an incremental multiple value is 0; if not, determining that the incremental multiple value is an integer quotient of the upward difference value and the preset upward interval value; obtaining the display data based on the incremental multiple value; the display data is a product of the incremental multiple value and a first preset display interval; the no, obtaining display data according to the fourth model, comprises: determining whether a falling change time of the sampling value is within a preset time, if not, display data is displayed in a decreasing manner with a preset interval until the display data is 0; if yes, determining whether the plurality of sampling values are all less than a preset threshold value, if not, dividing the plurality of sampling values into third group data and fourth group data; wherein, the sampling values contained in the third group data are all not less than the preset threshold value, and the remaining sampling values constitute the fourth group data; the sampling values in the third group data obtain corresponding display data according to the second model; if the display data corresponding to the sampling values in the third group data is 0, then the display data corresponding to all sampling values after the sampling value is 0; or, if the display data corresponding to the sampling values in the third group data is all greater than 0, then the display data corresponding to the sampling values in the fourth group data is all 0; if yes, obtaining a falling difference value of a current sampling value and a previous sampling value, and determining whether the falling difference value is less than a preset falling interval value, if yes, determining that a decreasing multiple value is 0; if not, determining that the decreasing multiple value is an integer quotient of the falling difference value and the preset falling interval value; obtaining display data based on the decreasing multiple value, and the display data is a product of the decreasing multiple value and a second preset display interval.

2. The semiconductor sensor data processing method according to claim 1, characterized by, The leaking gas is methane; and the preset threshold value is 11000.

3. The semiconductor sensor data processing method of claim 1, wherein, The preset upward interval value is 70; The first preset display interval is 5.

4. The semiconductor sensor data processing method according to claim 3, characterized by, The yes, obtaining display data according to the second model, comprises: determining whether the current sampling value meets a first sampling threshold range, if yes, determining that the second model is a first curve model, and obtaining the display data based on the first curve model; wherein the first sampling threshold range is: , the first curve model is: , the display data. If not, it is judged whether the current sampling value meets a second sampling threshold range. If yes, it is determined that the second model is a second curve model, and the display data is obtained based on the second curve model; wherein the second sampling threshold range is: , the second curve model is: , the display data. If not, it is judged whether the current sampling value satisfies a third sampling threshold range. If yes, it is determined that the second model is a third curve model, and the display data is obtained based on the third curve model; wherein the third sampling threshold range is: , the third curve model is: , the display data. If not, it is judged whether the current sampling value satisfies a fourth sampling threshold range. If yes, it is determined that the second model is a fourth curve model, and the display data is obtained based on the fourth curve model; wherein the fourth sampling threshold range is: , the fourth curve model is: , the display data. If not, it is judged whether the current sampling value satisfies a fifth sampling threshold range. If yes, it is determined that the second model is a fifth curve model, and the display data is obtained based on the fifth curve model; wherein the fifth sampling threshold range is: , the fifth curve model is: , the display data.

5. The semiconductor sensor data processing method according to claim 4, wherein, The no, obtaining display data according to the third model, comprises: dividing the plurality of sampling values into first group data and second group data; wherein, the sampling values contained in the first group data are all less than a preset threshold value, and the remaining sampling values constitute the second group data; for the first group data, obtaining the display data according to the first model; obtaining a first actual difference value of a first sampling value in the second group data and a last sampling value in the first group data; obtaining a second actual difference value of the first two sampling values in the second group of data; determining whether the second actual difference value is less than the first actual difference value, if yes, determining an incremental multiple value as an integer quotient of the first actual difference value and a preset rising interval value; obtaining display data based on the incremental multiple value, the display data being a product of the incremental multiple value and a first preset display interval; if no, obtaining display data according to the second model.

6. The semiconductor sensor data processing method of claim 1, wherein, The preset falling interval value is less than the preset rising interval value.

7. The semiconductor sensor data processing method of claim 6, wherein, The preset time is: ; The preset interval is 5; The preset falling interval value is 50; The second preset display interval is 5.

8. A semiconductor sensor data processing system, characterized by, The method comprises the following steps: constructing a first model, a second model, a third model and a fourth model; acquiring the concentration of the leaked gas in a target area to obtain a plurality of sampling values; the plurality of sampling values are continuously changed data in a preset time period; determining whether the plurality of sampling values are in an upward trend, and if no, obtaining display data according to the fourth model; when the plurality of sampling values are in an upward trend, determining whether the plurality of sampling values are all less than a preset threshold, and if yes, obtaining display data according to the first model; when the plurality of sampling values are not all less than the preset threshold, determining whether the plurality of sampling values are all not less than the preset threshold, and if yes, obtaining display data according to the second model; when the plurality of sampling values are not all not less than the preset threshold, obtaining display data according to the third model; if yes, obtaining display data according to the first model, comprising the following steps: obtaining an upward difference value of two adjacent sampling values; determining whether the upward difference value is less than a preset rising interval value, and if yes, determining an incremental multiple value as 0; if no, determining the incremental multiple value as an integer quotient of the upward difference value and the preset rising interval value; obtaining the display data based on the incremental multiple value; the display data being a product of the incremental multiple value and a first preset display interval; If not, display data is displayed in a decreasing manner at a preset interval until the display data is 0; if yes, judge whether the plurality of sampling values are all less than a preset threshold value, if not, divide the plurality of sampling values into third group data and fourth group data; wherein the third group data contains sampling values that are all not less than the preset threshold value, and the rest of the sampling values constitute the fourth group data; the sampling values in the third group data obtain corresponding display data according to the second model; if the display data corresponding to the sampling values in the third group data is 0, then the display data corresponding to all sampling values after the sampling values is 0; or, if the display data corresponding to the sampling values in the third group data is all greater than 0, then the display data corresponding to the sampling values in the fourth group data is all 0; if yes, obtain a falling difference value of the current sampling value and a sampling value at a previous time, judge whether the falling difference value is less than a preset falling interval value, if yes, determine that a decreasing multiple value is 0; if not, determine that the decreasing multiple value is an integer quotient of the falling difference value and the preset falling interval value; obtain display data based on the decreasing multiple value, and the display data is a product of the decreasing multiple value and a second preset display interval.

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