Light source device and method for manufacturing light source device

Abstract

The present application provides a light source device and a manufacturing method thereof. The light source device includes a micro light emitting element layer, a light-transmitting substrate, and a wavelength conversion module. The wavelength conversion module includes a first wavelength conversion layer, a second wavelength conversion layer, a light-transmitting layer, a plurality of isolation structures, a plurality of reflective layers, and a light-cutting layer. The first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in an arrangement direction of the light-transmitting substrate. Any two of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are separated from each other by the isolation structure. The reflective layer is located between any one of a side wall of the first wavelength conversion layer, a side wall of the second wavelength conversion layer, and a side wall of the light-transmitting layer and the isolation structure in the arrangement direction. The light source device has good optical efficiency.

Description

Technical Field

[0001] This invention relates to an optical device and a method for manufacturing the optical device, and specifically to a light source device and a method for manufacturing the light source device. Background Technology

[0002] In recent years, with the high manufacturing cost and lifespan of Organic Light-Emitting Diode (OLED) display panels unable to compete with current mainstream displays, Micro LED displays have gradually attracted the investment attention of major technology companies. Micro LED displays offer optical performance comparable to OLED display technology, such as high color saturation, fast response time, and high contrast, while also boasting advantages such as low power consumption and long material lifespan. Generally, the manufacturing technology of micro LED displays employs a die-transfer method, directly transferring pre-fabricated micro LED dies onto the backplane of the driving circuitry, a technique known as mass transfer technology.

[0003] To meet the aforementioned product requirements, a technical solution has been proposed that utilizes a micro-array of light-emitting diodes (LEDs) of a single color (e.g., blue light) to excite wavelength conversion materials (e.g., nanoscale phosphors or quantum dots) to form various desired colors of light. However, such technical solutions suffer from low light conversion efficiency and the incomplete absorption of the excitation beam, resulting in the emission of the converted beam (e.g., blue light leakage), thus leading to insufficient color purity of the emitted light.

[0004] The "Background Art" paragraph is only used to help understand the content of this invention. Therefore, the content disclosed in the "Background Art" paragraph may include some prior art that is not known to those skilled in the art. The content disclosed in the "Background Art" paragraph does not mean that the content or the problem to be solved by one or more embodiments of this invention was known or recognized by those skilled in the art before this application was filed. Summary of the Invention

[0005] This invention provides a light source device with good optical efficiency.

[0006] This invention provides a method for manufacturing a light source device, which can produce a light source device with good optical efficiency.

[0007] To achieve one, some, or all of the above-mentioned objectives, or other objectives, an embodiment of the present invention provides a light source device. The light source device includes a micro-light-emitting element layer, a light-transmitting substrate, and a wavelength conversion module. The light-transmitting substrate has a first surface and a second surface opposite to each other. The wavelength conversion module is located between the micro-light-emitting element layer and the first surface of the light-transmitting substrate. The wavelength conversion module includes a first wavelength conversion layer, a second wavelength conversion layer, a light-transmitting layer, a plurality of isolation structures, a plurality of reflective layers, and a light-blocking layer. The first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in the arrangement direction of the light-transmitting substrate. Any two of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are separated from each other by isolation structures. The plurality of reflective layers are located in the arrangement direction between any one of the sidewalls of the first wavelength conversion layer, the sidewall of the second wavelength conversion layer, and the sidewall of the light-transmitting layer and the isolation structures. The light-blocking layer contacts the first surface of the light-transmitting substrate, wherein the light-blocking layer contacts and overlaps the first wavelength conversion layer and the second wavelength conversion layer.

[0008] To achieve one or more of the above-mentioned objectives, or other objectives, an embodiment of the present invention provides a method for manufacturing a light source device. The method includes the following steps: providing a light-transmitting substrate having a first surface and a second surface opposite to each other; forming a wavelength conversion module on the first surface of the light-transmitting substrate; and forming a micro-light-emitting element layer on the side of the wavelength conversion module away from the light-transmitting substrate. The method for forming the wavelength conversion module includes the following steps: forming a light-blocking layer and a plurality of spaced regions without a light-blocking layer on the first surface of the light-transmitting substrate; forming a first wavelength conversion layer and a second wavelength conversion layer on the light-blocking layer, and forming a light-transmitting layer on the spaced regions, wherein the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are spaced apart in the arrangement direction of the light-transmitting substrate; forming reflective layers on portions of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer; and forming a plurality of isolation structures in the regions between the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, the light-transmitting layer, and adjacent reflective layers.

[0009] Based on the above, in the embodiments of the present invention, the light source device, through the configuration of the reflective layer, allows the lateral conversion beam or excitation beam to be repeatedly transmitted through the first wavelength conversion layer, the second wavelength conversion layer, or the light-transmitting layer by reflection from the reflective layer until light is emitted from the first surface of the light-transmitting substrate. Furthermore, through the configuration of the light-blocking layer, the portion of the excitation beam not converted by the first and second wavelength conversion layers can be repeatedly transmitted through the first and second wavelength conversion layers by reflection from the light-blocking layer and the reflective layer, thereby undergoing conversion again. In this way, both the optical efficiency and conversion efficiency of the wavelength conversion module can be effectively improved.

[0010] The light source device and the method for manufacturing the light source device in the embodiments of the present invention enable the light source device with a reflective layer to generate a beam recovery function with a lateral direction, and improve the utilization rate of the excitation beam and the generation rate of the conversion beam.

[0011] Furthermore, the light source device manufactured using the method described in this embodiment is simple to manufacture and has good structural precision because it only requires one bonding and alignment process. Moreover, since the micro-light-emitting element layer of the light source device is directly bonded to the wavelength conversion module, beam loss is reduced, resulting in good optical efficiency. Simultaneously, the thickness of the structure can be reduced, thus offering the advantage of miniaturization.

[0012] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below, and detailed descriptions are provided in conjunction with the accompanying drawings. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the structure of a light source device according to an embodiment of the present invention.

[0014] Figures 2A to 2G yes Figure 1 A flowchart illustrating the manufacturing process of the light source device. Detailed Implementation

[0015] The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the accompanying views. The directional terms mentioned in the following embodiments (e.g., up, down, left, right, front, or back) are only for reference to the accompanying views. Therefore, the directional terms used are for illustrative purposes and not for limiting the present invention.

[0016] Figure 1 This is a schematic diagram of the structure of a light source device according to an embodiment of the present invention. Figures 2A to 2G yes Figure 1 A flowchart illustrating the fabrication process of the light source device. Please refer to... Figure 1 In this embodiment, the light source device 100 includes a micro-light-emitting element layer 110, a light-transmitting substrate 120, a wavelength conversion module 130, and an anti-reflection layer 140. Specifically, as Figure 1 As shown, in this embodiment, the light-transmitting substrate 120 has a first surface S1 and a second surface S2 that are opposite to each other. The wavelength conversion module 130 is located between the micro light-emitting element layer 110 and the first surface S1 of the light-transmitting substrate 120, while the anti-reflection layer 140 is located on the second surface S2 of the light-transmitting substrate 120.

[0017] Specifically, such as Figure 1As shown, in this embodiment, the micro-light-emitting element layer 110 has a plurality of micro-light-emitting elements MD, which are used to provide a plurality of excitation beams BL. For example, the micro-light-emitting element MD is a blue micro light-emitting diode, and the emission wavelength of the excitation beam BL is, for example, in the range of 430 nanometers to 480 nanometers.

[0018] More specifically, the wavelength conversion module 130 includes a first wavelength conversion layer 131, a second wavelength conversion layer 132, a light-transmitting layer 133, multiple isolation structures 134, multiple reflective layers 135, and a light-cutoff layer 136. The first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 are arranged at intervals along the arrangement direction DE of the light-transmitting substrate 120. Further, the multiple isolation structures 134 are respectively disposed between the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133. Furthermore, in this embodiment, when the light source device 100 is viewed in the direction opposite to the emission direction E of the illumination beam, the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 are arranged in a matrix on the first surface S1 of the light-transmitting substrate 120. The emission direction E of the illumination beam is perpendicular to the arrangement direction DE.

[0019] For example, in this embodiment, the materials of the first wavelength conversion layer 131 and the second wavelength conversion layer 132 are, for example, quantum dot materials or nanoscale phosphors. The first wavelength conversion layer 131 and the second wavelength conversion layer 132 are used to convert the excitation beam BL into multi-channel conversion beams TL1 and TL2, respectively, wherein the emission wavelengths of the conversion beams TL1 and TL2 are different from the emission wavelength of the excitation beam BL. For example, in this embodiment, the micro-light-emitting element MD is a blue micro-light-emitting diode, and the emission wavelengths of the conversion beams TL1 and TL2 are, for example, in the range of approximately 590 nanometers (nm) to 700 nanometers and approximately in the range of approximately 500 nanometers to 570 nanometers, respectively, thereby forming red light and green light of the illumination beam provided by the light source device 100. It is worth mentioning that the illumination beam includes at least one of the excitation beam BL, red light, and green light. The illumination beam exits the light source device 100 from the anti-reflection layer 140 in the emission direction E of the illumination beam. In this embodiment, the material of the light-transmitting layer 133 is, for example, an optical adhesive that allows the excitation beam BL to pass directly through, but is not limited to this. In this embodiment, the excitation beam BL can be directly used as blue light from the light source device 100. However, in other embodiments, in order to improve the color purity of the blue light (i.e., narrow the distribution range of the blue light wavelength), a filter element is provided between the first surface S1 of the light-transmitting substrate 120 and the light-transmitting layer 133. The filter element is used to allow blue light of a specific wavelength to pass through. Alternatively, when using other light sources, in order to convert blue light, the wavelength conversion module 130 in other embodiments may also selectively provide a blue light wavelength conversion material in the light-transmitting layer 133 to obtain the desired blue light.

[0020] like Figure 1 As shown, in this embodiment, any two of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 are separated from each other by an isolation structure 134. Furthermore, a plurality of reflective layers 135 are located in the arrangement direction DE between any one of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 and each isolation structure 134. For example, in this embodiment, the reflective layer 135 is a thin metal film, which can be used to reflect light beams in all wavelength ranges, while the isolation structure 134 may be made of black resin or a light-absorbing material to absorb or block the excitation light beam BL.

[0021] And, as Figure 1As shown, in this embodiment, the micro light-emitting element MD only needs to be aligned once with the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 of the wavelength conversion module 130. This allows the area of ​​the orthogonal projection of the micro light-emitting element MD onto the light-transmitting substrate 120 to overlap with the area of ​​the orthogonal projection of any one of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 onto the light-transmitting substrate 120. Furthermore, the area of ​​the orthogonal projection of any one of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 onto the light-transmitting substrate 120 is greater than the area of ​​the orthogonal projection of the micro light-emitting element MD onto the light-transmitting substrate 120.

[0022] The area of ​​the orthographic projection of the micro-light-emitting element MD on the light-transmitting substrate 120 does not overlap with the area of ​​the orthographic projection of the isolation structure 134 on the light-transmitting substrate 120. In this way, the multiple excitation beams BL provided by the multiple micro-light-emitting elements MD can enter the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 respectively.

[0023] Furthermore, such as Figure 1 As shown, in this embodiment, the sidewall of any one of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 is perpendicular to the first surface S1 of the light-transmitting substrate 120, and the reflective layer 135 covers at least a portion of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133. Thus, in the first wavelength conversion layer 131 and the second wavelength conversion layer 132 of the wavelength conversion module 130, the laterally transmitted conversion beams TL1 and TL2 can have their emission directions converted by reflection from the reflective layer 135, thereby passing through the light-transmitting substrate 120, and emitting light from the first surface S1 of the light-transmitting substrate 120. This improves the optical efficiency of the wavelength conversion module 130. On the other hand, in the first wavelength conversion layer 131 and the second wavelength conversion layer 132 of the wavelength conversion module 130, the excitation beam BL transmitted to the side can be converted into converted beams TL1 and TL2 in the first wavelength conversion layer 131 and the second wavelength conversion layer 132 by reflection by the reflective layer 135. This improves the optical conversion efficiency of the first wavelength conversion layer 131 and the second wavelength conversion layer 132 of the wavelength conversion module 130. Furthermore, in the light-transmitting layer 133 of the wavelength conversion module 130, the excitation beam BL transmitted to the side is reflected by the reflective layer 135 and transmitted in the light-transmitting layer 133, and then emitted from the first surface S1 of the light-transmitting substrate 120. This improves the optical efficiency of the wavelength conversion module 130.

[0024] Furthermore, such as Figure 1As shown, in this embodiment, the light-blocking layer 136 contacts the first surface S1 of the light-transmitting substrate 120, wherein the light-blocking layer 136 contacts and overlaps the first wavelength conversion layer 131 and the second wavelength conversion layer 132. The light-blocking layer 136 is disposed between the light-transmitting substrate 120 and the first wavelength conversion layer 131. Another light-blocking layer 136 is disposed between the light-transmitting substrate 120 and the second wavelength conversion layer 132. For example, in this embodiment, the light-blocking layer 136 has a significant reflection effect on light beams with emission wavelengths less than 500 nanometers, and allows light beams with emission wavelengths greater than 500 nanometers to pass through. For example, the light-blocking layer 136 prevents the excitation beam BL from passing through; the light-blocking layer 136 can be used to reflect the excitation beam BL and allow the converted beams TL1 and TL2 to pass through.

[0025] And, as Figure 1 As shown, in this embodiment, the area of ​​the orthogonal projection of the light-blocking layer 136 onto the light-transmitting substrate 120 does not overlap with the area of ​​the orthogonal projection of the light-transmitting layer 133 onto the light-transmitting substrate 120. Thus, the excitation beam BL can exit the wavelength conversion module 130 after passing through the light-transmitting layer 133, thereby forming the blue light portion of the illumination beam provided by the light source device 100. On the other hand, in the first wavelength conversion layer 131 and the second wavelength conversion layer 132, the portion of the excitation beam BL that is not converted by the first wavelength conversion layer 131 and the second wavelength conversion layer 132 can be repeatedly transmitted through the first wavelength conversion layer 131 and the second wavelength conversion layer 132 via reflection from the light-blocking layer 136 and the reflective layer 135, thereby undergoing conversion again. Only the converted beams TL1 and TL2 can exit the wavelength conversion module 130 via the light-blocking layer 136, thereby forming the red or green light of the illumination beam provided by the light source device 100. This improves the conversion efficiency of the wavelength conversion module 130.

[0026] In this way, the optical efficiency and conversion efficiency of the wavelength conversion module 130 can be effectively improved by the configuration of the reflective layer 135 and the light cutoff layer 136.

[0027] On the other hand, such as Figure 1 As shown, in this embodiment, each isolation structure 134 has a first end 134A, a second end 134C, and a body portion 134B connecting the first end 134A and the second end 134C. The first end 134A contacts the micro-light-emitting element layer 110, and at least one of the light-transmitting substrate 120 and the light-blocking layer 136 contacts the second end 134C. Furthermore, the area of ​​the orthographic projection of the first end 134A and the second end 134C of each isolation structure 134 onto the light-transmitting substrate 120 is larger than the area of ​​the orthographic projection of the body portion 134B of each isolation structure 134 onto the light-transmitting substrate 120. That is, in this embodiment, the outline of each isolation structure 134 is, for example, similar to an I-shape.

[0028] Furthermore, such as Figure 1 As shown, in this embodiment, the first end 134A and the second end 134C of each isolation structure 134 protrude from both sides of the body portion 134B in the arrangement direction DE to form multiple protrusions P. Any one of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 has a body region corresponding to the body portion 134B of each isolation structure 134. In the arrangement direction DE, each reflective layer 135 is located between the body portion 134B and the body region of any one of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133, and the thickness of each reflective layer 135 in the arrangement direction DE is less than the length of each protrusion P in the arrangement direction DE. That is, as... Figure 1 As shown, each reflective layer 135 is surrounded by the body region of any one of the protrusions P at the corresponding two ends of each isolation structure 134, the body portion 134B, the sidewall of the first wavelength conversion layer 131, the sidewall of the second wavelength conversion layer 132, and the sidewall of the light-transmitting layer 133.

[0029] In this way, the protrusions P of each isolation structure 134 can be configured to block the excitation beam BL from entering the wavelength conversion module 130 at a large angle or to block the beam reflected by the reflective layer 135 from leaving the wavelength conversion module 130 at a large angle. This limits the incident angle range of the excitation beam BL provided by the micro-light-emitting element MD, or limits the exit angle range of the converted beams TL1 and TL2 leaving the wavelength conversion module 130 and the excitation beam BL passing through the light-transmitting layer 133, thereby reducing stray light generation.

[0030] The following will be paired Figures 2A to 2G The steps of the manufacturing method for the light source device 100 will be further explained.

[0031] First, such as Figure 2A As shown, a light-transmitting substrate 120 is provided, and an anti-reflective layer 140 is formed on the second surface S2 of the light-transmitting substrate 120. For example, the anti-reflective layer 140 is formed on the second surface S2 of the light-transmitting substrate 120 by coating or deposition. Figures 2A to 2F As shown, a wavelength conversion module 130 is formed on the first surface S1 of the light-transmitting substrate 120.

[0032] Furthermore, such as Figures 2A to 2F As shown, the method for forming the wavelength conversion module 130 includes the following steps.

[0033] First, such as Figure 2AAs shown, a light-blocking layer 136 and a plurality of spaced regions IR are formed on the first surface S1 of the light-transmitting substrate 120. The plurality of spaced regions IR do not have the light-blocking layer 136.

[0034] Next, as Figures 2B to 2D As shown, a first wavelength conversion layer 131 and a second wavelength conversion layer 132 are formed on the light-blocking layer 136 using a photolithography process, and a light-transmitting layer 133 is formed on the spacer region IR. In this embodiment, the light-transmitting layer 133 directly contacts the light-transmitting substrate 120. Furthermore, the first wavelength conversion layer 131 and the second wavelength conversion layer 132 are deposited on the light-blocking layer 136. For example, a semiconductor fabrication process using physical deposition or chemical deposition is employed. Further, such as... Figure 2D As shown, in this embodiment, the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 are arranged at intervals on the arrangement direction DE of the light-transmitting substrate 120, and on the arrangement direction DE, any two of the sidewalls of the first wavelength conversion layer 131, the sidewalls of the second wavelength conversion layer 132, and the sidewalls of the light-transmitting layer 133 face each other across a first gap G1.

[0035] Next, as Figure 2E As shown, reflective layers 135 are formed on portions of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133. For example, the reflective layers 135 are deposited on the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 by means of a coating.

[0036] Next, as Figure 2F As shown, multiple isolation structures 134 are formed between the sidewalls of the first wavelength conversion layer 131, the sidewalls of the second wavelength conversion layer 132, and the two adjacent reflective layers 135 of the light-transmitting layer 133. Further, the isolation structures 134 are filled between the two reflective layers 135.

[0037] More specifically, such as Figure 2E and Figure 2F As shown, in each first gap G1, two adjacent reflective layers 135 are separated by a second gap G2 and face each other. The other part of the sidewalls of the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133, which are not provided with each reflective layer 135, are separated by a third gap G3 and a fourth gap G4 and face each other. The second gap G2 is located between the third gap G3 and the fourth gap G4.

[0038] Thus, as Figure 2FAs shown, when forming each isolation structure 134, the light-shielding material used to form the isolation structure 134 will be filled into the third gap G3, the second gap G2 and the fourth gap G4 to form the first end 134A, the second end 134C and the body portion 134B connecting the first end 134A and the second end 134C of each isolation structure 134 respectively.

[0039] In this way, the wavelength conversion module 130 can be formed on the light-transmitting substrate 120.

[0040] Next, a micro-light-emitting element layer 110 is formed on the side of the wavelength conversion module 130 away from the light-transmitting substrate 120, thereby forming the light source device 100. Specifically, in this embodiment, the method of forming the micro-light-emitting element layer 110 on the side of the wavelength conversion module 130 away from the light-transmitting substrate 120 includes aligning and attaching the micro-light-emitting element layer 110 to the side of the wavelength conversion module 130 away from the light-transmitting substrate 120.

[0041] In this way, the structure and manufacturing method of the light source device 100 in this embodiment enable the light source device 100 with the reflective layer 135 to generate a beam recovery function with a side direction, and improve the utilization rate of the excitation beam and the generation rate of the conversion beam.

[0042] Furthermore, in the fabrication method of the light source device 100 in this embodiment, only one bonding and alignment process is required, which simplifies the fabrication process and reduces the risk of errors during bonding. This ensures good alignment accuracy between the micro-light-emitting elements MD of the micro-light-emitting element layer 110 and the first wavelength conversion layer 131, the second wavelength conversion layer 132, and the light-transmitting layer 133 of the wavelength conversion module 130. In this embodiment, since the micro-light-emitting element layer 110 is directly bonded to the wavelength conversion module 130, beam loss is reduced, resulting in good optical efficiency. Simultaneously, the thickness of the structure can be reduced, thus achieving the advantage of miniaturization.

[0043] In summary, in the embodiments of the present invention, the light source device, through the configuration of the reflective layer, allows the lateral conversion beam or excitation beam to be repeatedly transmitted through the first wavelength conversion layer, the second wavelength conversion layer, or the light-transmitting layer by reflection from the reflective layer until light is emitted from the first surface of the light-transmitting substrate. Furthermore, through the configuration of the light cutoff layer, the portion of the excitation beam not converted by the first and second wavelength conversion layers can be repeatedly transmitted through the first and second wavelength conversion layers by reflection from the light cutoff layer and the reflective layer, thereby undergoing conversion again. Thus, both the optical efficiency and conversion efficiency of the wavelength conversion module can be effectively improved. In addition, the light source device formed by the manufacturing method of this embodiment is simple to manufacture and has good structural precision because it only requires one bonding and alignment process. Furthermore, since the micro-light-emitting element layer of the light source device is directly bonded to the wavelength conversion module, beam loss can be reduced, resulting in good optical efficiency, and the thickness of the structure can be reduced, thus achieving the advantage of miniaturization.

[0044] The above description is merely a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. Any simple equivalent changes and modifications made in accordance with the claims and specification of the present invention are still within the scope of this patent. Furthermore, no embodiment or claim of the present invention needs to achieve all the objectives, advantages, or features disclosed in the present invention. In addition, the abstract and title of the invention are used only to assist in patent document retrieval and are not intended to limit the scope of the invention. Furthermore, the terms "first," "second," etc., mentioned in this specification or claims are only used to name elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of elements.

[0045] List of reference numerals

[0046] 100: Light source device

[0047] 110: Micro-light-emitting element layer

[0048] 120: Transparent substrate

[0049] 130: Wavelength Conversion Module

[0050] 131: First Wavelength Conversion Layer

[0051] 132: Second wavelength conversion layer

[0052] 133: Translucent layer

[0053] 134: Isolation Structure

[0054] 134A: First end

[0055] 134B: Body part

[0056] 134C: Second end

[0057] 135: Reflective layer

[0058] 136: Light cutoff layer

[0059] 140: Anti-reflective layer

[0060] BL: Excitation Beam

[0061] DE: Arrangement Direction

[0062] E: The emission direction of the illumination beam

[0063] G1: First gap

[0064] G2: Second gap

[0065] G3: Third Gap

[0066] G4: Fourth Gap

[0067] IR: Spacing region

[0068] MD: Micro light-emitting element

[0069] P: Protrusion

[0070] S1: First surface

[0071] S2: Second surface

[0072] TL1, TL2: Convert beams.

Claims

1. A light source device, characterized in that, The light source device includes a micro-light-emitting element layer, a light-transmitting substrate, and a wavelength conversion module, wherein... The light-transmitting substrate has a first surface and a second surface that are opposite to each other; The wavelength conversion module is located between the micro-light-emitting element layer and the first surface of the light-transmitting substrate. The wavelength conversion module includes a first wavelength conversion layer, a second wavelength conversion layer, a light-transmitting layer, multiple isolation structures, multiple reflective layers, and a light-cutoff layer. The first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in the arrangement direction of the light-transmitting substrate; Any two of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are separated from each other by one of the plurality of isolation structures; The plurality of reflective layers are located in the arrangement direction between any one of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer and the plurality of isolation structures, and the plurality of reflective layers are located only on a portion of the plurality of isolation structures; and The light-blocking layer is in contact with the first surface of the light-transmitting substrate, wherein the light-blocking layer contacts and overlaps the first wavelength conversion layer and the second wavelength conversion layer.

2. The light source device according to claim 1, characterized in that, The micro-light-emitting element layer has a plurality of micro-light-emitting elements, and the area of ​​the orthogonal projection of the plurality of micro-light-emitting elements on the light-transmitting substrate overlaps with the area of ​​the orthogonal projection of any one of the first wavelength conversion layer, the second wavelength conversion layer and the light-transmitting layer on the light-transmitting substrate.

3. The light source device according to claim 1, characterized in that, The micro-light-emitting element layer has multiple micro-light-emitting elements, and the area of ​​the orthographic projection of the multiple micro-light-emitting elements on the light-transmitting substrate does not overlap with the area of ​​the orthographic projection of the multiple isolation structures on the light-transmitting substrate.

4. The light source device according to claim 1, characterized in that, The area of ​​the light-blocking layer projected onto the light-transmitting substrate does not overlap with the area of ​​the light-transmitting layer projected onto the light-transmitting substrate.

5. The light source device according to claim 1, characterized in that, The light source device further includes an anti-reflective layer located on the second surface of the light-transmitting substrate.

6. A light source device, characterized in that, The light source device includes a micro-light-emitting element layer, a light-transmitting substrate, and a wavelength conversion module, wherein, The light-transmitting substrate has a first surface and a second surface that are opposite to each other; The wavelength conversion module is located between the micro-light-emitting element layer and the first surface of the light-transmitting substrate. The wavelength conversion module includes a first wavelength conversion layer, a second wavelength conversion layer, a light-transmitting layer, multiple isolation structures, multiple reflective layers, and a light-cutoff layer. The first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in the arrangement direction of the light-transmitting substrate; Any two of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are separated from each other by one of the plurality of isolation structures; The plurality of reflective layers are located in the arrangement direction between any one of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer and the plurality of isolation structures; and The light-blocking layer is in contact with the first surface of the light-transmitting substrate, wherein the light-blocking layer contacts and overlaps the first wavelength conversion layer and the second wavelength conversion layer. Each of the plurality of isolation structures has a first end, a second end, and a body portion connecting the first end and the second end. The first end is in contact with the micro light-emitting element layer, and the second end is in contact with at least one of the light-transmitting substrate and the light-blocking layer. The area of ​​the orthographic projection of the first end and the second end of the plurality of isolation structures onto the light-transmitting substrate is greater than the area of ​​the orthographic projection of the body portion of the plurality of isolation structures onto the light-transmitting substrate.

7. The light source device according to claim 6, characterized in that, Each of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer has a body region corresponding to the body portion of a corresponding one of the plurality of isolation structures, and each of the reflective layers is located in the arrangement direction between the body portion and the body region of any one of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer.

8. The light source device according to claim 6, characterized in that, The first end and the second end of each of the plurality of isolation structures protrude from both sides of the body portion in the arrangement direction, thereby forming a plurality of protrusions, and the thickness of each of the reflective layers in the arrangement direction is less than the length of the corresponding one of the protrusions in the arrangement direction.

9. A method for manufacturing a light source device, characterized in that, The manufacturing method includes: A light-transmitting substrate is provided, wherein the light-transmitting substrate has a first surface and a second surface that are opposite to each other; A wavelength conversion module is formed on the first surface of the light-transmitting substrate, wherein the method for forming the wavelength conversion module includes: A light-blocking layer and a plurality of spaced regions without the light-blocking layer are formed on the first surface of the light-transmitting substrate; A first wavelength conversion layer and a second wavelength conversion layer are formed on the light cutoff layer, and a light-transmitting layer is formed on the plurality of spaced regions, wherein the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in the arrangement direction of the light-transmitting substrate; Reflective layers are formed on portions of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer; and Multiple isolation structures are formed in the region between two adjacent reflective layers, including the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, the light-transmitting layer, and the reflective layer. The formed reflective layers are located only in a portion of the multiple isolation structures. A micro-light-emitting element layer is formed on the side of the wavelength conversion module away from the light-transmitting substrate.

10. The method for manufacturing the light source device according to claim 9, characterized in that, The method of forming the micro-light-emitting element layer on the side of the wavelength conversion module away from the light-transmitting substrate includes aligning and bonding the micro-light-emitting element layer to the side of the wavelength conversion module away from the light-transmitting substrate.

11. The method for manufacturing the light source device according to claim 10, characterized in that, The micro-light-emitting element layer has a plurality of micro-light-emitting elements, and the area of ​​the orthogonal projection of the plurality of micro-light-emitting elements on the light-transmitting substrate overlaps with the area of ​​the orthogonal projection of any one of the first wavelength conversion layer, the second wavelength conversion layer and the light-transmitting layer on the light-transmitting substrate.

12. The method for manufacturing the light source device according to claim 10, characterized in that, The micro-light-emitting element layer has multiple micro-light-emitting elements, and the area of ​​the orthographic projection of the multiple micro-light-emitting elements on the light-transmitting substrate does not overlap with the area of ​​the orthographic projection of the multiple isolation structures on the light-transmitting substrate.

13. The method for manufacturing the light source device according to claim 9, characterized in that, The manufacturing method further includes forming an anti-reflective layer on the second surface of the light-transmitting substrate.

14. A method for manufacturing a light source device, characterized in that, The manufacturing method includes: A light-transmitting substrate is provided, wherein the light-transmitting substrate has a first surface and a second surface that are opposite to each other; A wavelength conversion module is formed on the first surface of the light-transmitting substrate, wherein the method for forming the wavelength conversion module includes: A light-blocking layer and a plurality of spaced regions without the light-blocking layer are formed on the first surface of the light-transmitting substrate; A first wavelength conversion layer and a second wavelength conversion layer are formed on the light cutoff layer, and a light-transmitting layer is formed on the plurality of spaced regions, wherein the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer are arranged at intervals in the arrangement direction of the light-transmitting substrate; Reflective layers are formed on portions of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer; and Multiple isolation structures are formed in the region between two adjacent reflective layers, including the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, the sidewall of the light-transmitting layer, and the reflective layer; and A micro-light-emitting element layer is formed on the side of the wavelength conversion module away from the light-transmitting substrate. In the arrangement direction, any two of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer face each other across a first gap, and In each of the first gaps, two adjacent reflective layers in the reflective layer face each other with a second gap between them, and the other portions of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer without reflective layers face each other with a third gap and a fourth gap, respectively, wherein the second gap is located between the third gap and the fourth gap, and the method for forming the plurality of isolation structures includes: Light-shielding material is filled into the third gap, the second gap, and the fourth gap to correspondingly form a first end, a second end, and a body portion connecting the first end and the second end of each of the plurality of isolation structures.

15. The method for manufacturing the light source device according to claim 14, characterized in that, The first end contacts the micro light-emitting element layer, the second end contacts at least one of the light-transmitting substrate and the light-blocking layer, and the area of ​​the orthographic projection of the first end and the second end of each of the plurality of isolation structures on the light-transmitting substrate is greater than the area of ​​the orthographic projection of the body portion of each of the plurality of isolation structures on the light-transmitting substrate.

16. The method for manufacturing the light source device according to claim 14, characterized in that, Each of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer has a body region corresponding to the body portion of each of the plurality of isolation structures, and each of the reflective layers is located in the arrangement direction between the body portion and the body region of any one of the sidewalls of the first wavelength conversion layer, the second wavelength conversion layer, and the light-transmitting layer.

17. The method for manufacturing the light source device according to claim 14, characterized in that, The first end and the second end of each of the plurality of isolation structures protrude from both sides of the body portion in the arrangement direction, thereby forming a plurality of protrusions, and the thickness of each of the reflective layers in the arrangement direction is less than the length of the corresponding one of the plurality of protrusions in the arrangement direction.

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