Semiconductor processing apparatus and temperature adjustment method

Abstract

An embodiment of the present application discloses a semiconductor processing apparatus and a temperature adjustment method. The semiconductor processing apparatus forms a window on a surface of a cover facing a base, and a temperature adjustment component is disposed outside a reaction chamber. The temperature adjustment component includes a second heating component and a blocking component. The second heating component forms a transfer path through the window capable of transferring energy to a loading area on a first surface of the base, and the blocking component can adjust the amount of energy transferred by the transfer path, so as to adjust the surface temperature of a wafer rotating with the base, improve the uniformity of the surface temperature of the wafer, and further improve the uniformity of the film thickness on the wafer surface.

Description

Technical Field

[0001] This application relates to the technical field of film-forming equipment, and particularly to a semiconductor processing device and a temperature adjustment method. Background Art

[0002] In existing film-forming equipment for Metal-organic Chemical Vapor Deposition (MOCVD), during the process of heating a wafer in a reaction chamber, generally, a heating component is used to heat a base, and then the heat is directly or indirectly transferred from the base to the wafer. When designing the entire heating component and the base, the issue of the uniformity of the heating temperature of the wafer is generally considered. However, due to the limitation of the uniformity of the base material itself or the complexity of the control of the heating component, it is easy to cause uneven heating of the base, and then the heat transferred to the tray or the wafer is uneven, resulting in uneven surface temperature of the wafer. Summary of the Invention

[0003] Embodiments of this application provide a semiconductor processing device and a temperature adjustment method, which can solve the problem of poor uniformity of the surface temperature of the wafer in existing film-forming equipment.

[0004] In a first aspect of embodiments of this application, a semiconductor processing device is provided, including: a cavity wall, the cavity wall including at least one opening; a cover body covering the opening; a base disposed inside the cavity wall, the base including a first surface facing the cover body, a reaction chamber being formed between the cover body and the first surface, the first surface including a bearing area arranged along the circumference of the base and capable of bearing a wafer; a first heating component heating the base directly or indirectly; a rotation transmission structure connected to the base to drive the base to rotate; the semiconductor processing device further includes a temperature adjustment component connected to the cover body, a window being provided on a surface of the cover body facing the base, the temperature adjustment component at least including: a second heating component facing the bearing area, the second heating component being capable of transmitting energy to the bearing area through the window and forming at least one covering area on the first surface; wherein, the temperature adjustment component further includes at least one blocking member, the blocking member being movably disposed relative to the second heating component, and the blocking member being configured to be able to adjust the covering area of the covering area.

[0005] Optionally, the orthographic projection of the temperature adjustment component on the cover body extends along a first radial direction of the cover body, and the moving direction of the blocking member relative to the second heating component is perpendicular to the first radial direction.

[0006] Optionally, the second heating component has a transmission path for transmitting energy to the covering area. The covering area adjusted by the blocking member is defined as the effective area. The blocking member can switch between any two or all three of the following three positions to adjust the area of the effective area of the second heating component on the first surface:

[0007] a) A position that shields the transmission path;

[0008] b) A position that partially shields the transmission path;

[0009] c) A position that does not shield the transmission path.

[0010] Optionally, the blocking member is a plate-shaped shielding structure, including a first sub-region that can shield, partially shield, or not shield the transmission path. The first sub-region includes at least one through region and one shielding region, and the through region and the shielding region are arranged at intervals along the moving direction X of the blocking member.

[0011] Optionally, the second heating component is configured as a lighting component, and the through region is configured as a light-transmitting region. When the blocking member is in the position that shields the transmission path, the shielding region is located on the transmission path; when the blocking member is in the position that partially shields the transmission path or does not shield the transmission path, at least part of the light-transmitting region is located on the transmission path.

[0012] Optionally, along the radial direction of the base, the bearing area includes a central ring area corresponding to the center of the wafer and an inner ring area and an outer ring area corresponding to the inner and outer edges of the wafer respectively; when the base rotates, the covering area has at least one movement path on the first surface, and the movement path at least partially covers the central ring area and at least covers one of the outer ring area and the inner ring area.

[0013] Optionally, the through region includes a first through region. When the first through region is completely located on the transmission path, the through region does not block the transmission path, and the temperature adjustment component forms an effective area that coincides with the covering area on the first surface.

[0014] Optionally, two through regions are provided, including a third through region and a fourth through region. When the third through region is located on the transmission path, the temperature adjustment component forms a third effective area on the first surface. When the fourth through region is located on the transmission path, the temperature adjustment component forms a fourth effective area on the first surface. When the base rotates, the movement path of the third effective area on the first surface covers the central ring area, and the movement path of the fourth effective area on the first surface covers the outer ring area and / or the inner ring area; the third through region and the fourth through region are respectively located on both sides of the shielding region in the moving direction X.

[0015] Optionally, the through region includes a fifth through region. When the fifth through region is located on the transfer path, the temperature adjustment component forms a fifth effective region on the first surface. The fifth effective region extends along a second radial direction of the base. The size of the fifth effective region in a direction perpendicular to the second radial direction is defined as the width. The width of the fifth effective region decreases from the central ring region towards the outer ring region and / or the inner ring region.

[0016] Optionally, the through region includes a sixth through region. When the sixth through region is located on the transfer path, the temperature adjustment component forms a sixth effective region on the first surface. The sixth effective region extends along a third radial direction of the base. The size of the sixth effective region in a direction perpendicular to the third radial direction is defined as the width. The width of the sixth effective region increases from the central ring region towards the outer ring region and / or the inner ring region.

[0017] Optionally, a cooling pipeline is integrally provided on the blocking member; the temperature adjustment component further includes a driving member for driving the blocking member to move.

[0018] A second aspect of the embodiments of the present application provides a temperature adjustment method, including the following steps:

[0019] Provide a semiconductor processing device as described in the first aspect;

[0020] Obtain the temperature distribution of each wafer;

[0021] Confirm a temperature adjustment reference value based on the temperature values of each wafer collected;

[0022] Based on the temperature adjustment reference value, determine the region to be temperature-adjusted and the temperature adjustment range. The region to be temperature-adjusted is configured as the entire carrying region corresponding to the wafer with a difference from the temperature adjustment reference value greater than a preset threshold or the local carrying region corresponding to the wafer with a difference from the temperature adjustment reference value greater than a preset threshold;

[0023] Judge whether the region to be temperature-adjusted reaches the coverage area of the temperature adjustment component; if it reaches, control the relative position of the blocking member and the temperature adjustment component based on the distribution of the region to be temperature-adjusted and the temperature adjustment range to adjust the temperature of the region to be temperature-adjusted.

[0024] The beneficial effects of the present application are as follows: A semiconductor processing device and a temperature adjustment method are provided. The semiconductor processing device forms a window on the side of the cover facing the base, and a temperature adjustment component connected to the cover is arranged outside the reaction chamber. The temperature adjustment component includes a second heating component and a blocking member. The second heating component forms a transmission path through the window that can transmit energy to the loading area on the first surface of the base. The blocking member can adjust the amount of energy transmitted through the transmission path, so as to adjust the surface temperature of the wafer rotating with the base, improve the uniformity of the wafer surface temperature, and further improve the uniformity of the film thickness on the wafer surface. Description of the Drawings

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0026] Figure 1 is a schematic structural diagram of the semiconductor processing device provided by the embodiment of the present application;

[0027] Figure 2 is a schematic structural diagram of the temperature adjustment component in the semiconductor processing device provided by the embodiment of the present application;

[0028] Figure 3 is a first schematic structural diagram of the blocking member in the semiconductor processing device provided by the embodiment of the present application;

[0029] Figure 4 is a second schematic structural diagram of the blocking member in the semiconductor processing device provided by the embodiment of the present application;

[0030] Figure 5 is a third schematic structural diagram of the blocking member in the semiconductor processing device provided by the embodiment of the present application;

[0031] Figure 6 is a schematic structural diagram of one kind of the second heating component in the semiconductor processing device provided by the embodiment of the present application;

[0032] Figure 7 is a schematic diagram of the relative positions of the coverage area and the effective area of the temperature adjustment component in the semiconductor processing device provided by the embodiment of the present application and the wafer;

[0033] Figure 8 is a schematic structural diagram of the temperature adjustment component in the semiconductor processing device provided by the embodiment of the present application for adjusting the surface temperature of the wafer;

[0034] Figure 9It is a schematic diagram of a state of a wafer during the process of a semiconductor processing apparatus provided by an embodiment of the present application processing the wafer;

[0035] Figure 10 It is a schematic diagram of another state of a wafer during the process of a semiconductor processing apparatus provided by an embodiment of the present application processing the wafer;

[0036] Explanation of reference numerals:

[0037] 100, semiconductor processing apparatus;

[0038] 10, cavity wall, 11, opening, 20, cover body, 203, bearing area, 203a, inner ring area, 203b, central ring area, 203c, outer ring area, 21, window, 30, base, 31, first surface, 32, reaction chamber, 40, first heating component, 50, rotation drive structure, 60, temperature adjustment component, 61, blocking member, 611, transmission area, 611a, first transmission area, 611b, second transmission area, 611c, third transmission area, 611d, fourth transmission area, 611e, fifth transmission area, 611f, sixth transmission area, 612, shielding area, 613a, first effective area, 613b, second effective area, 613c, third effective area, 613d, fourth effective area, 613e, fifth effective area, 613f, sixth effective area, 618, covering area, 618a, first covering area, 618b, second covering area, 62, second heating component, 621, lamp cover, 622, lamp tube, 63, driving member, 630, motor, 631, lead screw, 632, linking part, 633, transmission part, 634, driving part, 635, slide rail, 70, nozzle;

[0039] 200, wafer, A, first end, B, second end;

[0040] X, moving direction. Detailed implementation manners

[0041] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of the described features.

[0042] It should also be further understood that the term "and / or" used in the specification and appended claims of the present application refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0043] An embodiment of the present application provides a semiconductor processing device and a temperature adjustment method. The semiconductor processing device forms a window on one side of the cover body facing the base, and a temperature adjustment component connected to the cover body is arranged outside the reaction chamber. The temperature adjustment component includes a second heating component and a blocking component. The second heating component forms a transmission path through the window capable of transmitting energy to the loading area on the first surface of the base, and the blocking component can adjust the amount of energy transmitted through the transmission path, so as to realize the adjustment of the surface temperature of the wafer rotating with the base, improve the uniformity of the surface temperature of the wafer, and further improve the uniformity of the film formation thickness on the surface of the wafer.

[0044] In some embodiments of the present application, with reference to Figures 1 to 7 , a semiconductor processing device 100 is provided. The semiconductor processing device 100 includes: a cavity wall 10, a cover body 20, a base 30, a first heating component 40, a rotation transmission structure 50, and a temperature adjustment component 60.

[0045] The overall structure of the cavity wall 10 is a box or a casing. The cavity wall 10 includes at least one opening 11. Specifically, in the embodiment shown in Figure 1 , the opening 11 is opened on the upper side of the cavity wall 10. With combined reference to Figure 1, the base 30 is disposed inside the cavity wall 10, the cover 20 is detachably covered on the opening 11 of the cavity wall 10, the cover 20 and the base 30 are oppositely disposed, the base 30 includes a first surface 31, the first surface 31 faces the cover 20, a reaction chamber 32 is formed between the cover 20 and the first surface 31, and the first surface 31 includes a loading area 203 arranged along the circumference of the base 30 and capable of loading the wafer 200.

[0046] The first heating component 40 is disposed inside the cavity wall 10. In this embodiment, the first heating component 40 is disposed below the base 30. The first heating component 40 heats the base 30 by direct heating, and then heats the wafer 200 through the base 30. For example, the first heating component 40 is an induction heating device. The first heating component 40 directly heats the base 30, and the base 30 then transfers the heat to the loading area of the first surface 31 to heat the wafer 200 loaded in the loading area. In other implementation manners of the present application, the first heating component 40 may also generate heat through a resistive heating device and indirectly heat the base 30 by heat transfer.

[0047] In this embodiment, the rotary drive structure 50 extends from the bottom surface of the cavity wall 10 into the inside of the cavity wall 10. The rotary drive structure 50 is externally connected to a drive motor, and the base 30 is connected to the rotary drive structure 50. The rotary drive structure 50 can drive the base 30 to rotate.

[0048] In this embodiment, refer to Figure 1 , the temperature regulating component 60 is disposed outside the reaction chamber 32. The temperature regulating component 60 is connected to the cover 20 and disposed in the cover 20. The cover 20 is provided with a window 21 on the surface facing the base 30, and the temperature regulating component 60 is disposed corresponding to the position of the window 21. In other embodiments, the temperature regulating component may also be disposed above the cover 20 for easy assembly. Refer to Figure 2 , the temperature regulating component 60 includes a blocking member 61 and a second heating component 62. The second heating component 62 faces the first surface 31 and can form a transmission path for transmitting energy to the loading area 203 through the window 21. The blocking member 61 is configured as a structural member capable of adjusting the amount of energy transmitted through the transmission path. In other words, the energy generated by the operation of the second heating component 62 (such as infrared radiation or electromagnetic radiation) can be transmitted through the window 21 to the loading area 203 to heat the wafer 200 loaded in the loading area 203. The path for the energy generated by the second heating component 62 to reach the loading area is the transmission path. The blocking member 61 can determine how much of the energy generated by the second heating component 62 can be transmitted to the loading area 203 through the transmission path, thereby adjusting the surface temperature of the wafer 200 loaded in the loading area 203 and improving the uniformity of the surface temperature of the wafer 200.

[0049] In some embodiments of the present application, refer toFigures 2 to 7 The blocking member 61 is a structural member that is movably disposed relative to the second heating assembly 62. Specifically, the second heating assembly 62 can form at least one covering area 618 on the first surface 31 through the window 21. The second heating assembly 62 has a transmission path for transmitting energy to the covering area 618. The covering area 618 (including 618a and 618b) adjusted by the blocking member 61 is defined as the effective area (including 613a - 613f). The blocking member 61 can switch between any two or all three of the following three positions to adjust the area of the effective area of the second heating assembly 62 on the first surface 31:

[0050] a) A position that shields the transmission path;

[0051] b) A position that partially shields the transmission path;

[0052] c) A position that does not shield the transmission path.

[0053] Among them, a) the position that shields the transmission path, that is, the blocking member 61 moves relative to the second heating assembly 62 until the blocking member 61 moves to a position where it completely blocks the heat transmission path of the second heating assembly 62, and the energy generated by the second heating assembly 62 cannot be effectively transmitted to the bearing area 203;

[0054] b) The position that partially shields the transmission path, that is, the blocking member 61 moves relative to the second heating assembly 62 until the blocking member 61 moves to a position where it partially blocks the heat transmission path of the second heating assembly 62. Only part of the transmission path formed between the second heating assembly 62 and the window 21 is effective, that is, only part of the energy transmitted through the original transmission path can be effectively transmitted to the bearing area 203, and the other part of the energy is blocked or absorbed by the blocking member 61;

[0055] c) The position that does not shield the transmission path, that is, the blocking member 61 moves relative to the second heating assembly 62 until the blocking member 61 moves to a position where it does not block the energy transmission path of the second heating assembly 62. The entire transmission path formed between the second heating assembly 62 and the window 21 is effective, and the energy transmitted through this transmission path can be effectively transmitted to the bearing area 203 in its entirety.

[0056] Specifically, in some embodiments of the present application, the orthographic projection of the temperature adjustment assembly 60 on the cover body 20 extends along the first radial direction of the cover body 20 (not shown), and the moving direction X of the blocking member 61 relative to the second heating assembly 62 is perpendicular to the above-mentioned first radial direction. In addition, refer to Figures 2 - 5In a specific embodiment, the blocking member 61 is a plate-shaped shielding structure, including a first sub-region 610 that can shield, partially shield, or not shield the above transmission path. The first sub-region 610 includes a transmission region (including 611a - 611f) and a shielding region 612, and the transmission region and the shielding region 612 are arranged at intervals along the moving direction X of the blocking member 61.

[0057] In some embodiments of the present application, referring to Figures 2 to 7 , the second heating component 62 is configured as a lighting component. The infrared radiation generated by the operation of the lighting component passes through the window 21 and is transmitted to the bearing area 203 to form a transmission path, so as to heat the wafer 200 carried by the bearing area 203. The transmission region of the blocking member 61 is configured as a light-transmitting region. When the blocking member 61 is at a position where it partially shields the transmission path or does not shield the transmission path, at least a part of the light-transmitting region is located on the transmission path, so that the infrared radiation of the second heating component 62 located on the transmission path is partially or completely transmitted to the bearing area 203 through the light-transmitting region.

[0058] In the embodiment, the window 21 is made of transparent quartz to allow the light emitted by the second heating component 62 to pass through the window 21 to heat the wafer 200.

[0059] The semiconductor processing device 100 provided in this embodiment drives the blocking member 61 to reciprocate relative to the second heating component 62, adjusts the relative positions of the light-transmitting region and the shielding region 612 and the light-emitting end of the second heating component 62, so as to adjust the light intensity of the light emitted by the second heating component 62, control the light-emitting intensity of the second heating component 62, with a fast response speed, and can adjust the light-emitting intensity of the second heating component 62 within a short time (less than 0.1 second), improve the uniformity of the surface temperature distribution of the wafer 200, and further improve the uniformity of the film formation thickness on the surface of the wafer 200.

[0060] In some embodiments of the present application, referring to Figure 7 As shown, along the radial direction of the base 30, the bearing area 203 includes a central ring area 203b corresponding to the center of the wafer 200 and an inner ring area 203a and an outer ring area 203c corresponding to the inner and outer edges of the wafer 200 respectively. When the base 30 rotates, the covering area 618 has at least one movement path on the first surface 31, and this movement path at least partially covers the central ring area 203b and at least covers one of the outer ring area 203c and the inner ring area 203a. It should be particularly noted that Figure 7 The attached drawings shown actually draw multiple implementation manners of the covering area 618 and the effective areas 613a - 613f (the effective area refers to the effective area when the blocking member has the least shielding of the transmission path) in the same drawing. Actually, in the complete technical solution of the present application, one of these multiple implementation manners or several of the multiple implementation manners can be adopted.

[0061] In an alternative embodiment, when the base 30 rotates, the covering area 618 has at least one movement path on the first surface 31, and this movement path partially covers the central ring area 203b and extends outward to cover the outer ring area 203c. The transmission area includes a first transmission area 611a. When the first transmission area 611a is completely located on the transmission path, this transmission area does not block the transmission path. The temperature adjustment component 60 forms an effective area 613a on the first surface 31 that coincides with the covering area 618.

[0062] In another alternative embodiment, the movement path of the covering area 618 on the first surface 31 simultaneously covers the outer ring area 203c, the central ring area 203b, and the inner ring area 203a. Correspondingly, the transmission area includes a second transmission area 611b. When the second transmission area 611b is completely located on the transmission path, this transmission area does not block the transmission path. The temperature adjustment component 60 forms an effective area 613b on the first surface 31 that coincides with the covering area 618.

[0063] In another alternative embodiment, two transmission areas are provided, including a third transmission area 611c and a fourth transmission area (611d). When the third transmission area 611c is located on the transmission path, the temperature adjustment component 60 forms a third effective area 613c on the first surface 31. When the fourth transmission area 611d is located on the transmission path, the temperature adjustment component 60 forms a fourth effective area 613d on the first surface 31. When the base rotates, the movement path of the third effective area 613c on the first surface 31 covers the central ring area 203b, and the movement path of the fourth effective area 613d on the first surface 31 covers the outer ring area 203c and / or the inner ring area 203a. Through the third transmission area 611c and the fourth transmission area 611d, the temperature adjustment component 60 can adjust the temperature of the central area and the edge area of the wafer respectively.

[0064] Further referring to Figures 9 - 10 As shown, in the general semiconductor epitaxial growth process, in general design, when the wafer and the base are placed relatively parallel, the temperature uniformity of the wafer at high temperature is designed to be in a better state. However, depending on the type of film formation, generally, there will be a situation such as Figure 9 As shown, the wafer 200 warps downward relative to the base 30. In this case, since the distance between the middle part of the wafer 200 and the base 30 becomes smaller, the middle part of the wafer 200 will show a relatively higher temperature compared to the edge. And as Figure 10As shown, when the wafer 200 warps upward relative to the base 30, since the distance between the middle part of the wafer 200 and the base 30 becomes larger, the middle part of the wafer 200 will exhibit a lower temperature relative to the edge. In these two cases, the third through region 611c and the fourth through region (611d) in this embodiment can effectively adjust the temperature of the central region and the edge region of the wafer respectively, so that even if the wafer 200 appears as Figure 9 or Figure 10 the temperature of the wafer surface can be adjusted by the temperature adjustment component 60 described in this application to be more uniform. Additionally, in a more optimal implementation, the third through region 611c and the fourth through region 611d of the wafer 200 are respectively located on both sides of the shielding region 612 in the moving direction X, so as to facilitate the wafer 200 to simultaneously exhibit Figure 9 and Figure 10 as shown in the case of, can selectively adjust the temperature of the wafer 200.

[0065] In an alternative embodiment, the through region includes a fifth through region 611e. When the fifth through region 611e is located on the transfer path, the temperature adjustment component 60 forms a fifth effective region 613e on the first surface 31. The fifth effective region 613e extends along the second radial direction of the base 30. The dimension of the fifth effective region 613e in the direction perpendicular to the second radial direction is defined as the width, and the width of the fifth effective region 613e decreases from the central ring region 203b to the outer ring region 203c and / or the inner ring region 203a. Similarly, since the fifth through region 611e can make the irradiation area of the second heating component on the middle region of the wafer 200 larger than that on the edge region of the wafer 200, this solution can be used for temperature adjustment when the wafer exhibits a situation such as Figure 10 resulting in the middle temperature of the wafer 200 being lower than the edge temperature. In addition, due to the use of a transition design with a decreasing width / area, the change in the heat received by the middle region of the wafer 200 to the heat received by the edge region of the wafer 200 can be made relatively smooth.

[0066] In an alternative embodiment, the through region includes a sixth through region 611f. Different from the previous embodiment, the width of the sixth effective region 613f increases from the central ring region 203b to the outer ring region 203c and / or the inner ring region 203a. In this embodiment, since the sixth through region 611f can make the irradiation area of the second heating component on the middle region of the wafer 200 smaller than that on the edge region of the wafer 200, this solution can be used for temperature adjustment when the wafer exhibits a situation such as Figure 9 resulting in the middle temperature of the wafer 200 being higher than the edge temperature. In addition, due to the use of a transition design with an increasing width / area, the change in the heat received by the middle region of the wafer 200 to the heat received by the edge region of the wafer 200 can be made relatively smooth.

[0067] In other implementation manners of the present application, the light transmission area can be designed and selected to have other shapes according to the distribution of the surface temperature of the wafer 200, so as to control the light output intensity of the second heating component 62 by the movement of the blocking member 61.

[0068] In some embodiments of the present application, the temperature adjustment component 60 further includes a driving member 63 for driving the blocking member 61 to move relative to the second heating component 62.

[0069] Specifically, referring to Figure 2 , the driving member 63 includes a motor 630. The motor 630 is disposed at one end of the blocking member 61. The output end of the motor 630 is connected to one end of a lead screw 631 through a transmission part 633. The other end of the transmission part 633 is connected to a driving part 634. The motor 630 drives the lead screw 631 to extend and contract along the moving direction X. The lead screw 631 drives the driving part 634 to reciprocate along the moving direction X through the transmission part 633. The driving part 634 drives the blocking member 61 to reciprocate relative to the second heating component 62 along the moving direction X. Wherein, a linkage part 632 is protrudingly arranged on the side wall of the end of the blocking member 61 close to the motor 630. The lead screw 631 passes through the linkage part 632. The linkage part 632 forms a support for the lead screw 631 to improve the strength of the lead screw 631. A slide rail 635 is arranged on the side wall of the end of the blocking member 61 far from the motor 630. The slide rail 635 extends along the moving direction X. The blocking member 61 moves along the slide rail 635 to ensure the stability of the movement of the blocking member 61.

[0070] In some embodiments of the present application, a cooling pipeline (not shown in the figure) is integrally arranged on the blocking member 61. The cooling pipeline is used to cool the blocking member 61 to prevent the blocking member 61 from being damaged due to overheating during the heating of the wafer 200 by the second heating component 62.

[0071] In some embodiments of the present application, referring to Figure 6 , the second heating component 62 is configured as a lighting component. The second heating component 62 includes a lamp cover 621 and a lamp tube 622. The lamp tube 622 is arranged in the lamp cover 621. The open end of the lamp cover 621 is the light output end of the second heating component 62.

[0072] In some embodiments of the present application, referring to Figure 1, the semiconductor processing apparatus 100 further includes a nozzle 70. The nozzle 70 is inserted into the cover body 20. One end of the nozzle 70 is located outside the cover body 20 and connected to a gas source (not shown in the figure). The other end of the nozzle 70 extends into the inner side of the reaction chamber 32. At least one gas jet port (not shown in the figure) communicating with the reaction chamber 32 is arranged at the inner side end of the nozzle 70 in the reaction chamber 32. The nozzle 70 is used to spray gas onto the surface of the wafer 200 to form a film on the surface of the wafer 200. Among them, the formed gas source is a MO (Metal-organic) source.

[0073] In some embodiments of the present application, with reference to Figure 8 As shown, the number of the temperature adjustment components 60 is at least one. When it is necessary to adjust the surface temperature of the wafer 200, the rotation drive structure 50 is started to drive the base 30 to rotate. When the wafer 200 to be adjusted rotates with the base 30 to face the temperature adjustment component 60, the movement blocking member 61 is moved to a partially shielded or unshielded position to adjust the surface temperature of the wafer 200 through the second heating component 62.

[0074] In some embodiments of the present application, the number of the temperature adjustment components 60 is two or more, and they are arranged at intervals along the circumferential direction of the base 30 to improve the temperature adjustment efficiency of the wafer.

[0075] In some embodiments of the present application, a temperature adjustment method is provided, including the following steps:

[0076] S1. Provide the semiconductor processing apparatus 100 as described above, open the cover body 20, place the wafer 200 on the first surface 31 of the base 30, open the gas source to supply gas to the nozzle 70, and open the first heating component 40. The first heating component 40 heats the base 30, and heats the wafer 200 disposed on the first surface 31 of the base 30 through heat conduction of the base 30.

[0077] S2. Obtain the temperature distribution on the surface of the wafer 200. Specifically, detect the temperature distribution on the surface of the wafer 200 through a temperature detector.

[0078] S3. Set a temperature adjustment reference value, which is the maximum value among the respective average temperature values of multiple wafers collected.

[0079] Based on the temperature adjustment reference value, judge the area to be temperature-adjusted and the temperature adjustment range. The area to be temperature-adjusted is configured as the overall bearing area corresponding to the wafer with a difference from the temperature adjustment reference value greater than a preset threshold or the local bearing area corresponding to the wafer with a difference from the temperature adjustment reference value greater than a preset threshold. The temperature adjustment range is configured as the difference value between the area to be temperature-adjusted and the temperature adjustment reference value.

[0080] S4. Determine whether the wafer carrier area corresponding to the wafer to be temperature-adjusted reaches the coverage area of the temperature adjustment component 60; if it reaches, control the blocking member 61 to adjust the amount of energy transmitted through the transmission path to adjust the temperature of the wafer 200 to be temperature-adjusted.

[0081] In some embodiments of the present application, the blocking component is configured as a blocking member 61 capable of moving relative to the second heating component 62. The step of controlling the blocking component to adjust the amount of energy transmitted through the transmission path in step S4 includes:

[0082] Control the blocking member 61 to move relative to the second heating component 62 so that the blocking member 61 is located at a position partially shielding the transmission path or a position not shielding the transmission path, to adjust the temperature of the wafer to be temperature-adjusted through the second heating component 62.

[0083] In some embodiments of the present application, the surface temperature of the wafer 200 is differentially compensated by controlling the irradiation time of the wafer 200 area.

[0084] In some embodiments of the present application, the surface temperature of the wafer 200 is differentially compensated by controlling the irradiation area of the wafer 200 area (i.e., the light-transmitting area of the light-transmitting area 611).

[0085] In some embodiments of the present application, by controlling the window selection of the wafer 200 area, that is, selecting Figures 3 to 5 different light-transmitting areas in the illustrated embodiment, to differentially compensate the surface temperature of the wafer 200.

[0086] The above has introduced in detail a semiconductor processing device and a temperature adjustment method provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A semiconductor processing apparatus, comprising: a cavity wall (10), the cavity wall (10) including at least one opening (11); a cover body (20) covering the opening (11); a base (30) disposed inside the cavity wall (10), the base (30) including a first surface (31) facing the cover body (20), a reaction chamber (32) being formed between the cover body (20) and the first surface (31), and the first surface (31) including a loading area (203) arranged along the circumference of the base (30) and capable of loading a wafer (200); a first heating component (40) heating the base (30) directly or indirectly; a rotation transmission structure (50) connected to the base (30) to drive the base (30) to rotate; characterized in that the semiconductor processing apparatus further includes a temperature regulating component (60) connected to the cover body (20), a window (21) being provided on a surface of the cover body (20) facing the base (30), and the temperature regulating component (60) at least including: a second heating component (62) facing the loading area, the second heating component (62) being capable of transmitting energy to the loading area (203) through the window (21) and forming at least one covering area (618) on the first surface (31); wherein, the temperature regulating component (60) further includes at least one blocking member (61), the blocking member (61) being movably disposed relative to the second heating component (62), and the blocking member (61) being configured to be able to adjust the covering area of the covering area.

2. The semiconductor processing apparatus according to claim 1, wherein, The orthographic projection of the temperature regulating component (60) on the cover body (20) extends along a first radial direction of the cover body (20), and a moving direction (X) of the blocking member (61) relative to the second heating component (62) is perpendicular to the first radial direction.

3. The semiconductor processing apparatus according to claim 1, wherein The second heating component (62) has a transmission path for transmitting energy to the covering area (618), and the covering area after being adjusted by the blocking member (61) is defined as an effective area. The blocking member (61) can switch between any two or all three of the following three positions to adjust the area of the effective area of the second heating component (62) on the first surface (31): a) A position for shielding the transmission path; b) A position for partially shielding the transmission path; c) A position for not shielding the transmission path.

4. The semiconductor processing apparatus according to claim 3, wherein The blocking member (61) is a plate-shaped shielding structure, including a first sub-region (610) capable of shielding, partially shielding or not shielding the transmission path, and the first sub-region (610) at least includes a through region and a shielding region (612), and the through region and the shielding region (612) are arranged at intervals along the moving direction (X) of the blocking member (61).

5. The semiconductor processing apparatus according to claim 4, wherein, The second heating component (62) is configured as a lighting component, the transmissive area is configured as a light-transmissive area, when the blocking member (61) is at a position blocking the transmission path, the shielding area (612) is located on the transmission path; when the blocking member (61) is at a position partially blocking the transmission path or not blocking the transmission path, at least a part of the light-transmissive area is located on the transmission path.

6. The semiconductor processing apparatus according to claim 4, wherein, Along the radial direction of the base (30), the carrying area includes a central ring area (203b) corresponding to the center of the wafer (200), and an inner ring area (203a) and an outer ring area (203c) corresponding to the inner and outer edges of the wafer (200) respectively; when the base (30) rotates, the covering area (618) has at least one movement path on the first surface, and the movement path at least partially covers the central ring area (203b), and at least covers one of the outer ring area (203c) and the inner ring area (203a).

7. The semiconductor processing apparatus according to claim 6, wherein, The transmissive area includes a first transmissive area (611a). When the first transmissive area (611a) is completely located on the transmission path, the transmissive area does not block the transmission path, and the temperature control component (60) forms an effective area (613a) on the first surface (31) that coincides with the covering area (618).

8. The semiconductor processing apparatus according to claim 6, wherein, Two transmissive areas are provided, including a third transmissive area (611c) and a fourth transmissive area (611d). When the third transmissive area is located on the transmission path, the temperature control component (60) forms a third effective area (613c) on the first surface (31). When the fourth transmissive area (611d) is located on the transmission path, the temperature control component (60) forms a fourth effective area (613d) on the first surface (31). When the base rotates, the movement path of the third effective area (613c) on the first surface (31) covers the central ring area (203b), and the movement path of the fourth effective area (613d) on the first surface (31) covers the outer ring area (203c) and / or the inner ring area (203a); the third transmissive area (611c) and the fourth transmissive area (611d) are respectively located on both sides of the shielding area (612) in the moving direction (X).

9. The semiconductor processing apparatus according to claim 6, wherein, The transmissive area includes a fifth transmissive area (611e). When the fifth transmissive area (611e) is located on the transmission path, the temperature control component (60) forms a fifth effective area (613e) on the first surface (31). The fifth effective area (613e) extends along the second radial direction of the base (30), and the dimension of the fifth effective area (613e) in the direction perpendicular to the second radial direction is defined as the width. The width of the fifth effective area (613e) decreases from the central ring area (203b) towards the outer ring area (203c) and / or the inner ring area (203a).

10. The semiconductor processing apparatus according to claim 6, wherein The through region includes a sixth through region (611f). When the sixth through region (611f) is located on the transfer path, the temperature adjustment component (60) forms a sixth effective region (613f) on the first surface (31). The sixth effective region (613f) extends along the third radial direction of the base (30). The dimension of the sixth effective region (613f) in a direction perpendicular to the third radial direction is defined as the width. The width of the sixth effective region (613f) increases from the central ring region (203b) towards the outer ring region (203c) and / or the inner ring region (203a).

11. The semiconductor processing apparatus according to claim 2, wherein A cooling pipeline is integrally arranged on the blocking member (61); the temperature adjustment component (60) further includes a driving member (63) for driving the blocking member (61) to move.

12. A temperature adjustment method, characterized in that, Including the following steps: Providing a semiconductor processing device according to any one of claims 1 to 11; Obtaining the temperature distribution of each wafer (200); Confirming a temperature adjustment reference value based on the temperature values of the collected wafers; Judging the region to be temperature-adjusted and the temperature adjustment range based on the temperature adjustment reference value. The region to be temperature-adjusted is configured as the overall corresponding loading region of the wafer with a difference from the temperature adjustment reference value greater than a preset threshold or the local corresponding loading region of the wafer with a difference from the temperature adjustment reference value greater than a preset threshold; Judging whether the region to be temperature-adjusted reaches the coverage area (618) of the temperature adjustment component; if it reaches, controlling the relative position of the blocking member (61) and the temperature adjustment component based on the distribution of the region to be temperature-adjusted and the temperature adjustment range to adjust the temperature of the region to be temperature-adjusted.

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