Semiconductor package structure and wire bonding method

Abstract

The embodiment of the present application provides a kind of semiconductor package structure and wire bonding method, semiconductor package structure includes: first wire bonding connection area, first wire bonding connection area is provided with first solder pad;Second wire bonding connection area, second wire bonding connection area is provided with second solder pad;Wire, including first wire, is connected between first solder pad and second solder pad;First wire has down-pressing portion, and first wire segment connected between down-pressing portion and first solder pad;Wherein, the distance between down-pressing portion and the plane where second wire bonding connection area is first height, and first height is less than 400 μm;The length of the orthographic projection of first wire on the plane where second wire bonding connection area is first length, the length of the orthographic projection of first wire segment on the plane where second wire bonding connection area is second length, and second length is 20%~80% of first length.The embodiment of the present application can avoid the occurrence of wire collision problem, to improve product quality and yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wire bonding technology, and more particularly to a semiconductor packaging structure and a wire bonding method. Background Technology

[0002] Wire bonding is a crucial step in semiconductor packaging. In this process, the direction of a bonding tool, such as a wedge, is controlled to attach wires to corresponding pads, achieving electrical connections between them. With rapid technological advancements and the miniaturization of semiconductor products, the gaps between wires in semiconductor packages are becoming increasingly smaller. For existing wire bonding structures, small spacing can cause contact, compression, or bending of previously bonded wires by the bonding tool or later-formed wires. Severe bending can lead to contact between compressed wires and other wires, causing short circuits and potentially rendering the product unusable.

[0003] Therefore, there is an urgent need to provide a semiconductor packaging structure to solve the problem of easy wire contact in existing wire bonding structures. Summary of the Invention

[0004] Therefore, in order to overcome at least some of the defects in the prior art, embodiments of the present invention provide a semiconductor packaging structure and wire bonding method that can avoid wire contact problems and improve product quality and yield.

[0005] An embodiment of the present invention provides a semiconductor packaging structure, including: a first wire bonding region, on which a first bonding pad is disposed; a second wire bonding region, on which a second bonding pad is disposed; a bonding wire, including a first bonding wire, connecting the first bonding pad and the second bonding pad; the first bonding wire having a pressing portion and a first line segment connecting the pressing portion and the first bonding pad; wherein the distance between the pressing portion and the plane where the second wire bonding region is located is a first height, the first height being less than 400 μm; the length of the orthographic projection of the first bonding wire onto the plane where the second wire bonding region is located is a first length, and the length of the orthographic projection of the first line segment onto the plane where the second wire bonding region is located is a second length, the second length being 20% ​​to 80% of the first length.

[0006] One embodiment of the present invention provides a wire bonding method applied to a wire structure to be bonded. The wire structure includes: a first wire bonding region, on which a first bonding pad is disposed; a second wire bonding region, on which a second bonding pad is disposed; the projection length of the line connecting the first bonding pad and the second bonding pad onto the second wire bonding region is a first length; the wire bonding method includes: forming a first bonding wire between the first bonding pad and the second bonding pad, and forming a pressing portion on the first bonding wire, wherein the distance between the pressing portion and the plane where the second wire bonding region is located is a first height, the first height being less than 400 μm; the length of the orthographic projection of the line connecting the pressing portion and the first bonding pad onto the plane where the second wire bonding region is located is a second length, the second length being 20% ​​to 80% of the first length.

[0007] The above embodiments of the present invention have at least one or more of the following beneficial effects: The semiconductor packaging structure and wire bonding method provided by the embodiments of the present invention form a pressing part on the first bonding wire. By controlling the height and formation position of the pressing part, the first bonding wire is positioned low in the pressing part. In the subsequent process of bonding other bonding wires, the first bonding wire is less likely to be squeezed or collided by other bonding wires, which would cause wire contact problems. Therefore, the risk of wire contact short circuit can be reduced and the product yield can be improved. Attached Figure Description

[0008] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0009] Figure 1 This is a schematic elevation view of a semiconductor packaging structure in one embodiment of the present invention.

[0010] Figure 2 This is a schematic diagram of the elevation structure of a semiconductor packaging structure in another embodiment of the present invention.

[0011] Figure 3 for Figure 2 The diagram shows a top view of the semiconductor packaging structure.

[0012] Figure 4 This is a schematic elevation view of a semiconductor packaging structure in another embodiment of the present invention.

[0013] Figure 5 for Figure 4 The diagram shows a top view of the semiconductor packaging structure.

[0014] Figure 6 This is a top view of a semiconductor packaging structure in another embodiment of the present invention.

[0015] Figure 7 for Figure 6The diagram shows a frontal view of the semiconductor packaging structure.

[0016] Figure 8 for Figure 6 The diagram shows a top view of a specific embodiment of the semiconductor packaging structure.

[0017] Figure 9 for Figure 8 The diagram shows a frontal view of the semiconductor packaging structure.

[0018] Figure 10 A schematic diagram illustrating the principle of a semiconductor packaging structure in one embodiment of the present invention.

[0019] Figure 11 This is a top view of a semiconductor packaging structure in yet another embodiment of the present invention.

[0020] Figure 12 This is a top view of a semiconductor packaging structure in another embodiment of the present invention.

[0021] Figure 13 This is a top view of a semiconductor packaging structure in another embodiment of the present invention.

[0022] Figure 14 This is a top view of a semiconductor packaging structure in another embodiment of the present invention.

[0023] Figure 15 for Figure 14 The diagram shows a top view of a more specific embodiment of the semiconductor packaging structure.

[0024] Figure 16 for Figure 15 The diagram shows a frontal view of the semiconductor packaging structure.

[0025] [Explanation of Labels in the Attached Image]

[0026] 100: Semiconductor package structure; 101: First wire bonding area; 102: Second wire bonding area; S': Plane containing the second wire bonding area; 10: Carrier; 11: First carrier; 12: Second carrier; 21: First bonding pad; 22: Second bonding pad; 23: Third bonding pad; 24: Fourth bonding pad; 25: Fifth bonding pad; 26: Sixth bonding pad; 30: Bond wire; 31: First bonding wire; 311: Pressing section; 312: First line segment; 313: Second line segment; 32: Second solder line; 200: Cleaver; h1: First height; h2: Second height; L1: First length; L2: Second length; L3: Third length; L4: Fourth length; L5: Fifth length; L6: Sixth length; X1: First reference line; X2: Second reference line; X21: Intersection point; PL1: First projection line; X3: Perpendicular line from the fourth solder pad to the first projection line; P1: Perpendicular foot; L7: Perpendicular foot distance. Detailed Implementation

[0027] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] To enable those skilled in the art to better understand the technical solutions of the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0029] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0030] It should also be noted that the division of multiple embodiments in this invention is only for the convenience of description and should not constitute a special limitation. Features in various embodiments can be combined and referenced in each other without contradiction.

[0031] One embodiment of the present invention provides a semiconductor packaging structure 100, such as... Figure 1 As shown, the semiconductor package structure 100 includes: a first wire bonding region 101, a second wire bonding region 102, and bonding wires 30. A first bonding pad 21 is disposed on the first wire bonding region 101; a second bonding pad 22 is disposed on the second wire bonding region 102; the bonding wire 30 includes a first bonding wire 31, connecting the first bonding pad 21 and the second bonding pad 22. The first bonding wire 31 has a pressing portion 311 and a first line segment 312 connecting the pressing portion 311 and the first bonding pad 21. The distance between the pressing portion 311 and the plane S' where the second wire bonding region 102 is located is a first height h1. The first height h1 is less than 400 μm. The length of the orthographic projection of the first bonding wire 31 onto the plane S' where the second wire bonding region 102 is located is a first length L1, and the length of the orthographic projection of the first line segment 312 onto the plane S' where the second wire bonding region 102 is located is a second length L2, where the second length L2 is 20% to 80% of the first length L1. In some embodiments, the second length L2 can be 30% to 70% of the first length L1. For example, the second length L2 can be 20%, 25%, 31%, 40%, 50%, 55%, 63%, 68%, 70%, 77%, 80%, etc. of the first length L1.

[0032] The semiconductor packaging structure 100 includes, for example, a carrier 10, which can be a chip or a substrate. Figure 1 The first wire bonding area 101 and the second wire bonding area 102 shown can both be located on the surface of the carrier 10, that is, the first wire bonding area 101 and the second wire bonding area 102 belong to different areas on the carrier 10.

[0033] In some embodiments, the semiconductor package structure 100 includes a first carrier 11 and a second carrier 12, with a first wire bonding region 101 located on the first carrier 11 and a second wire bonding region 102 located on the second carrier 12. The first carrier 11 can be a chip or a substrate, and the second carrier 12 can be a chip or a substrate. Specifically, the semiconductor package structure 100 can be a chip having a first bonding wire 31, a first bonding pad 21, and a second bonding pad 22; a substrate having a first bonding wire 31, a first bonding pad 21, and a second bonding pad 22; a combination of two chips connected by the first bonding wire 31; a combination of two substrates connected by the first bonding wire 31; or a combination of a chip and a substrate connected by the first bonding wire 31. This embodiment is not limited to the above examples. (Refer to...) Figure 2 The first carrier 11 is, for example, a chip, and the second carrier 12 is, for example, a substrate. The first carrier 11 is disposed on the second carrier 12, and the first carrier 11 and the second carrier 12 are electrically connected by a first bonding wire 31.

[0034] As described above, the first bonding wire 31 can be, for example, gold wire, copper wire, or alloy bonding wire. Copper wire can be, for example, pure copper wire, palladium-copper wire, or gold-palladium-copper wire. The diameter d of the bonding wire 30 (i.e., the first bonding wire 31) can be 15–60 μm (micrometers). For example, the diameter d can be 18 μm, 20 μm, 25 μm, 30 μm, 38 μm, or 50 μm. Figure 2 and Figure 3 The first solder wire 31 shown can be, for example, a "positive bonding" structure where a wire is bonded from a first solder pad 21 to a second solder pad 22, with solder balls 301 formed on the first solder pad 21. Alternatively, as... Figure 4 and Figure 5 As shown, the first bonding wire 31 can be, for example, a "reverse bonding" structure where the wire is bonded from the second bonding pad 22 to the first bonding pad 21, wherein solder balls 301 are formed on the second bonding pad 22. "Forward bonding" and "reverse bonding" are relative terms, meaning the directions of the two bonding methods are opposite to each other.

[0035] In this embodiment of the invention, since a pressing portion 311 is formed on the first bonding wire 31, the position of the first bonding wire 31 near the pressing portion 311 is relatively low, for example... Figure 1 and Figure 4 As shown, a depression may be formed near the pressing part 311 (see reference). Figure 1 and Figure 4 The first bonding wire 31 also includes a second segment 313 connecting the pressing portion 311 and the second bonding pad 22. The highest distance from the second segment 313 to the plane S' where the second wire bonding area 102 is located is the second height h2, which is greater than the first height h1 (that is, at least one point on the second segment 313 is higher than the pressing portion 311). Therefore, during the wire bonding process of the semiconductor package structure 100, when other bonding wires are formed after the first bonding wire 31, the wire bonding tool or the later-formed bonding wire passes near the pressing portion 311, which can prevent short circuits and improve product yield.

[0036] In some embodiments, refer to Figure 6 The first wire bonding area 101 also has a third solder pad 23 adjacent to the first solder pad 21. The second wire bonding area 102 also has a fourth solder pad 24 opposite to the third solder pad 23. The fourth solder pad 24 is located on the side of the second solder pad 22 closest to the first solder pad 21. The third solder pad 23 and the fourth solder pad 24 are used for the second bonding wire 32 (refer to...) Figure 9 (Connection). That is, during the packaging process of the semiconductor package structure 100, after the first bonding wire 31 is formed, a second bonding wire 32 will be formed between the third bonding pad 23 and the fourth bonding pad 24. During the formation of the second bonding wire 32, such as... Figure 10As shown, during the process of connecting the second bonding wire 32 to the fourth bonding pad 24, the bonding tool, such as the wedge 200, will descend onto the fourth bonding pad 24. Since the diameter of the wedge 200 cannot be further reduced, its BH height (Bottleneck Height) cannot be increased indefinitely. The BH height can also be called the tip height of the wedge 200; the diameter at the tip is smaller, and the diameter above the tip is larger. If the first bonding wire 31 uses a traditional bonding structure, the wedge 200 will squeeze the first bonding wire 31, leading to a wire contact problem. Therefore, in the semiconductor packaging structure 100 provided by this embodiment of the invention, the presence of the pressing part 311 creates a lower position on the first bonding wire 31, preventing the wedge 200 from squeezing the first bonding wire 31 during the formation of the second bonding wire 32. Commonly used wedge BH heights include 150μm, 200μm, 250μm, and 300μm. Therefore, for a wedge with a BH of 150μm, the shape of the first bonding wire 31 can be specifically set so that the first height h1 is less than 150μm. For a wedge with a BH of 200μm, the shape of the first bonding wire 31 can be specifically set so that the first height h1 is less than 200μm. For a wedge with a BH of 250μm, the shape of the first bonding wire 31 can be specifically set so that the first height h1 is less than 250μm. For a wedge with a BH of 300μm, the shape of the first bonding wire 31 can be specifically set so that the first height h1 is less than 300μm.

[0037] More specifically, refer to Figure 6 and Figure 7 The length of the line connecting the fourth solder pad 24 and the third solder pad 23 projected onto the plane S' of the second wire bonding area 102 is the third length L3, and the difference between the second length L2 and the third length L3 is -200μm to 200μm. Specifically, the difference between the second length L2 and the third length L3 can be -100μm to 100μm. Figure 6 As shown in the diagram, if the pressing part 311 is to the right of the fourth pad 24, then the second length L2 is greater than the third length L3, and the difference between the second length L2 and the third length L3 is positive. For example, it can be 10μm, 23μm, 28μm, 35μm, 40μm, 56μm, 78μm, 80μm, 100μm, 120μm, 150μm, etc. Figure 6As shown, if the pressing part 311 is to the left of the fourth pad 24, then the second length L2 is less than the third length L3. The difference between the second length L2 and the third length L3 is negative, for example, -1μm, -5μm, -10μm, -21μm, -25μm, -30μm, -40μm, -50μm, -75μm, -90μm, -100μm, -130μm, -140μm, etc. When the difference between the second length L2 and the third length L3 is 0, it can be considered that the position of the pressing part 311 is aligned with the position of the fourth pad 24, which can better avoid the cutting edge. For example... Figure 6 As shown, the first bonding wire 31 along Figure 6 Extending horizontally. The third pad 23 and the fourth pad 24 are along... Figure 6 The pads are arranged horizontally. That is, two sets of pads are arranged in parallel (the first pad 21 and the second pad 22 form one set, and the second pad 23 and the third pad 24 form another set). The second length L2 is the distance from the pressing part 311 to the first pad 21 in the top view (also a horizontal distance). The third length L3 is the distance from the fourth pad 24 to the third pad 23 in the top view (also a horizontal distance). [The difference between the second length L2 and the third length L3 is -200μm to 200μm]. This can be understood as the pressing part 311 being located within a 200μm range before and after its alignment with the fourth pad 24. In other words, the pressing part 311 is positioned close to the fourth pad 24 to better avoid the wedge and prevent contact with the wire.

[0038] Reference Figure 8 and Figure 9 The bonding wire 30 also includes a second bonding wire 32, which connects the third bonding pad 23 and the fourth bonding pad 24. Figure 9 As can be seen, at the position corresponding to the fourth solder pad 24, the first solder wire 31 is in a lower state. When the wedge 200 solders the second solder wire 32 to the fourth solder pad 24, the first solder wire 31 can avoid the wedge 200 (refer to...). Figure 10 To prevent wire contact, the second bonding wire 32 may have the same material diameter as the first bonding wire 31, and the material can be gold wire, copper wire, or alloy bonding wire. For example, the copper wire can be pure copper wire, palladium-copper wire, or gold-palladium-copper wire. The diameter d of the second bonding wire 32 can be 18μm, 20μm, 25μm, 30μm, 38μm, or 50μm. The second bonding wire 32 can be, for example, a "positive bonding" structure where the wire is bonded from the third pad 23 to the fourth pad 24, with solder balls formed on the third pad 23. Alternatively, the second bonding wire 32 can be, for example, a "reverse bonding" structure where the wire is bonded from the fourth pad 24 to the third pad 23, with solder balls formed on the fourth pad 24.

[0039] In some embodiments, the two sets of solder pads (first solder pad 21 and second solder pad 22 forming one set, and second solder pad 23 and third solder pad 24 forming another set) may be inclined together. See reference... Figure 11 The line connecting the first solder pad 21 and the third solder pad 23 is the first reference line X1. The length of the shortest line connecting the fourth solder pad 24 and the first reference line X1 projected onto the plane S' of the second wire bonding area 102 is the fourth length L4. The length of the shortest line connecting the pressing part 311 and the first reference line X1 projected onto the plane S' of the second wire bonding area 102 is the fifth length L5, and the difference between the fifth length L5 and the fourth length L4 is -200μm to 200μm. Specifically, the difference between the fifth length L5 and the fourth length L4 is -100μm to 100μm. Figure 11 As shown in the diagram, if the pressing part 311 is to the right of the fourth pad 24, then the fifth length L5 is greater than the fourth length L4, and the difference between the fifth length L5 and the fourth length L4 is positive. For example, it can be 8μm, 20μm, 25μm, 31μm, 44μm, 54μm, 70μm, 85μm, 100μm, 130μm, 148μm, etc. Figure 11 As shown, if the pressing part 311 is to the left of the fourth pad 24, then the fifth length L5 is less than the fourth length L4, and the difference between the fifth length L5 and the fourth length L4 is negative. For example, it could be -1μm, -3μm, -11μm, -20μm, -27μm, -35μm, -41μm, -50μm, -65μm, -80μm, -100μm, -130μm, -144μm, etc. When the difference between the fifth length L5 and the fourth length L4 is 0, it can be considered that the position of the pressing part 311 is aligned with the position of the fourth pad 24, which can better avoid the cutting edge. (Refer to...) Figure 11 The fourth length L4 is the horizontal distance from the fourth pad 24 to the third pad 23 in the top view, and the fifth length L5 is the horizontal distance from the pressing part 311 to the first pad 21 in the top view. This can be understood as the pressing part 311 being located within a 200μm range before and after its alignment with the fourth pad 24. In other words, the pressing part 311 is positioned close to the fourth pad 24 to better avoid the wedge and prevent contact with the trace.

[0040] In some embodiments, refer to Figure 12 The orthographic projection of the first solder wire 31 onto the plane S' of the second bonding area 102 is the first projection line PL1. The perpendicular line X3 from the fourth solder pad 24 to the first projection line PL1 intersects the first projection line PL1 at the first perpendicular foot P1. The length of the line connecting the first perpendicular foot P1 and the first solder pad 21 in the orthographic projection of the plane S' of the second bonding area 102 is the perpendicular foot distance L7, where the difference between the second length L2 and the perpendicular foot distance L7 is -100μm to 100μm. For example, according to... Figure 12As shown, when the pressing part 311 is located to the right of the first vertical foot P1, the difference between the second length L2 and the distance L7 from the vertical foot is positive. For example, the difference between the second length L2 and the distance L7 can be 5μm, 11μm, 23μm, 30μm, 45μm, 50μm, 60μm, 75μm, 100μm, etc. When the pressing part 311 is located to the left of the first vertical foot P1, the difference between the second length L2 and the distance L7 is negative. For example, the difference between the second length L2 and the distance L7 can be -2μm, -8μm, -15μm, -26μm, -30μm, -40μm, -63μm, -65μm, 100μm, etc. When the difference between the second length L2 and the distance L7 is 0, it can be considered that the position of the pressing part 311 is aligned with the position of the fourth pad 24, which can better avoid the cutting tool.

[0041] like Figure 13 As shown, the semiconductor package structure 100, for example, has a third bonding wire 33 connected between the fifth bonding pad 25 and the sixth bonding pad 26. For example, if the third bonding wire 33 and the first bonding wire 31 are formed before the second bonding wire 32 is formed, then during the formation of the second bonding wire 32, if the wedge at the fourth bonding pad 24 compresses the first bonding wire 31, causing the first bonding wire 31 to bend, the first bonding wire 31 may collide with the third bonding wire 33. In this embodiment, the first bonding wire 31 is provided with a pressing portion 311 to prevent collision with the wedge and thus prevent it from contacting the third bonding wire 33.

[0042] In one embodiment, a third solder pad 23 adjacent to the first solder pad 21 is further provided on the first wire bonding area 101. A fourth solder pad 24 opposite to the third solder pad 23 is further provided on the second wire bonding area 102. The third solder pad 23 and the fourth solder pad 24 are used to connect via a second solder wire 32. The orthographic projection of the first solder wire 31 on the plane S' of the second wire bonding area 102 intersects the orthographic projection of the line connecting the third solder pad 23 and the fourth solder pad 24 on the plane S' of the second wire bonding area 102 at the intersection point X21. That is, after the first solder wire 31, a second solder wire 32 needs to be formed, and a cross-bonding is required. Figure 14 As shown, the line connecting the third solder pad 23 and the fourth solder pad 24 is the second reference line X2. The orthographic projection of the second reference line X2 on the plane S' where the second bonding area 102 is located intersects the projection of the first solder wire 31 on the plane S' where the second bonding area 102 is located at the intersection point X21. Therefore, to meet this requirement of cross bonding, a pressing part 311 is provided on the first solder wire 31, so that the first solder wire 31 is in a lower position near the pressing part 311. During the formation of the second solder wire 32, when the cutter or the wire of the second solder wire 32 passes over the first solder wire 31, it is not easy for the second solder wire 32 to collide with the first solder wire 31 after it is formed.

[0043] Specifically, refer to Figure 14 The length of the line connecting the intersection point X21 and the first solder pad 21 projected onto the plane S' of the second bonding area 102 is the sixth length L6. The difference between the second length L2 and the sixth length L6 is -200μm to 200μm. Specifically, the difference between the second length L2 and the sixth length L6 is -100μm to 100μm. It can be understood that within 100μm before and after the position of the pressing part 311 on the first bonding wire 31 corresponding to the intersection point X21, it can better control the formation of a low position of the first bonding wire 31 in the area corresponding to the intersection point X21, preventing wire contact problems. Among them, refer to Figure 14 As shown in the diagram, when the pressing part 311 is located to the right of the intersection point 21, the difference between the second length L2 and the sixth length L6 is positive, for example, it can be 2μm, 15μm, 20μm, 33μm, 43μm, 55μm, 67μm, 79μm, 100μm, etc. When the pressing part 311 is located to the left of the intersection point 21, the difference between the second length L2 and the sixth length L6 is negative, for example, it can be -1μm, -6μm, -12μm, -34μm, -40μm, -55μm, -68μm, -92μm, 100μm, etc. When the difference between the second length L2 and the sixth length L6 is 0, it can be considered that the pressing part 311 is aligned with the intersection point X21, which can better avoid the cutting tool and the bonding wire during the second bonding process 32.

[0044] In some embodiments, the bonding wire 30 further includes a second bonding wire 32 connected between the third bonding pad 23 and the fourth bonding pad 24, and the minimum spacing between the first bonding wire 31 and the second bonding wire 32 is greater than or equal to one times the wire diameter of the bonding wire 30. The wire diameter of the bonding wire 30 is, for example, 15–60 μm. When the wire diameter of the bonding wire 30 is 18 μm, the minimum spacing between the first bonding wire 31 and the second bonding wire 32 is greater than or equal to 18 μm. When the wire diameter of the bonding wire 30 is 20 μm, the minimum spacing between the first bonding wire 31 and the second bonding wire 32 is greater than or equal to 20 μm. When the wire diameter of the bonding wire 30 is 50 μm, the minimum spacing between the first bonding wire 31 and the second bonding wire 32 is greater than or equal to 50 μm. This prevents the second bonding wire 32 from sinking and colliding with the first bonding wire 31 during the encapsulation process following the bonding process.

[0045] In some embodiments, the first height h1 is greater than or equal to one times the diameter of the bonding wire 30. For example, if the diameter of the bonding wire 30 mentioned in the previous embodiments is 15–60 μm, then when the diameter of the bonding wire 30 is 18 μm, the first height h1 is greater than or equal to 18 μm. When the diameter of the bonding wire 30 is 20 μm, the first height h1 is greater than or equal to 20 μm. When the diameter of the bonding wire 30 is 50 μm, the minimum gap between the first bonding wire 31 and the second bonding wire 32 is greater than or equal to 50 μm. This prevents short circuits caused by the first bonding wire 32 sinking and contacting the second wire bonding area 102 during the encapsulation process following the bonding process.

[0046] This invention also provides a wire bonding method applied to a wire structure to be bonded, the wire structure including: a first wire bonding region 101 and a second wire bonding region 102. A first solder pad 21 is disposed on the first wire bonding region 101, and a second solder pad 22 is disposed on the second wire bonding region 102. The projection length of the line connecting the first solder pad 21 and the second solder pad 22 on the plane S' of the second wire bonding region 102 is a first length L1.

[0047] In some embodiments, the wire bonding method includes forming a first bonding wire 31 between a first bonding pad 21 and a second bonding pad 22, and forming a pressing portion 311 on the first bonding wire 31. The distance between the pressing portion 311 and the plane S' where the second wire bonding area 102 is located is a first height h1, which is less than 400 μm. The length of the projection of the line connecting the pressing portion 311 and the first bonding pad 21 onto the plane S' where the second wire bonding area 102 is located is a second length L2, which is 20% to 80% of the first length L1. Specifically, the second length L2 is 30% to 70% of the first length L1. For example, the second length L2 can be 20%, 25%, 31%, 40%, 50%, 55%, 63%, 68%, 70%, 77%, 80%, etc., of the first length L1.

[0048] In some embodiments, the wire bonding method specifically includes: moving a wire bonding tool between a first bonding pad 21 and a second bonding pad 22 to form a first wire bonding 31; and pressing the wire bonding tool down toward the second wire bonding area 102 when the wire bonding tool moves to a preset position, so that a pressing portion 311 is formed on the first wire bonding 31. The first height h1 is also the distance from the wire bonding tool at the preset position to the plane S' where the second wire bonding area 102 is located.

[0049] The length of the projection of the line connecting the wire bonding tool and the first solder pad 21 at the preset position onto the plane S' of the second wire bonding area 102 (the second length L2) is also the length of the projection of the line connecting the pressing part 311 and the first solder pad 21 onto the plane S' of the second wire bonding area 102. The first wire bonding 31 includes a first line segment 312 connecting the pressing part 311 and the first solder pad 21. The second length L2 is the length of the projection of the second line segment 312 onto the plane S' of the second wire bonding area 102.

[0050] In some embodiments, the distance between the pressing portion 311 and the plane S' where the second wire bonding area 102 is located is less than the tip height of the cleaver 200.

[0051] The tip height of the wire bonding tool is the BH height of the wedge 200. Common wedge BH heights include 150μm, 200μm, 250μm, and 300μm. Therefore, when the wedge BH is 150μm, the wedge 200 can be pressed down at a preset position so that the height from the pressing portion 311 formed on the first bonding wire 31 to the plane S' where the second bonding area 102 is located is less than 150μm. When the wedge BH is 200μm, the wedge 200 can be pressed down at a preset position so that the height from the pressing portion 311 formed on the first bonding wire 31 to the plane S' where the second bonding area 102 is located is less than 200μm. When the wedge BH is 250μm, the wedge 200 can be pressed down at a preset position so that the height from the pressing portion 311 formed on the first bonding wire 31 to the plane S' where the second bonding area 102 is located is less than 250μm. When the cleaver BH is 350μm, the cleaver 200 can be pressed down at a preset position so that the height of the pressing part 311 formed on the first bonding wire 31 to the plane S' where the second bonding area 102 is located is less than 350μm.

[0052] By pressing down the chopper 200 at a preset position to form a pressing portion 311, the first bonding wire 31 is positioned lower near the pressing portion 311. This makes it easier for the bonding tool (e.g., the chopper 200) or the later-formed bonding wire to squeeze the first bonding wire 31 when other bonding wires are formed after the first bonding wire 31 during the bonding process of the semiconductor package structure 100. This can prevent short circuits and improve product yield.

[0053] In some embodiments, the wire structure to be bonded further includes a third bonding pad 23 and a fourth bonding pad 24. The third bonding pad 23 is disposed on the first wire bonding region 101 and adjacent to the first bonding pad 21, and the fourth bonding pad 24 is disposed on the second wire bonding region 102 and located on the side of the second bonding pad 22 closer to the first bonding pad 21. The wire bonding method further includes: after forming the first bonding wire 31, forming a second bonding wire between the third bonding pad 23 and the fourth bonding pad 24 (moving a wire bonding tool between the third bonding pad 23 and the fourth bonding pad 24 to form the second bonding wire). For example, see... Figure 6 After the first bond wire 31 is formed, during the welding of the second bond wire 32, when connecting the second bond wire 32 to the fourth bond pad 24, the wire bonding tool, such as the wedge 200, will descend onto the fourth bond pad 24. Since the diameter of the wedge 200 cannot be further reduced, the BH height (bottom height) of the wedge 200 (i.e., the height of the tip of the wedge 200, where the diameter at the tip is smaller and the diameter above the tip is larger) cannot be increased indefinitely. If the first bond wire 31 uses a conventional wire bonding structure, the wedge 200 will squeeze the first bond wire 31, leading to a wire contact problem. In the wire bonding method provided in this embodiment, when the second bond wire 32 is formed after the first bond wire 31 with the pressing portion 311 is formed, the wedge 200 can be prevented from squeezing the first bond wire 31 during the formation of the second bond wire 32, thus preventing severe deformation of the first bond wire 31.

[0054] In some embodiments, the length of the orthographic projection of the line connecting the fourth solder pad 24 and the third solder pad 23 on the plane S' of the second wire bonding area 102 is the third length L3. Then, in a preset position, the difference between the second length L2 and the third length L3 is -200μm to 200μm. For example... Figure 6 As shown, the first bonding wire 31 along Figure 6 Extending horizontally. The third pad 23 and the fourth pad 24 are along... Figure 6 The pads are arranged horizontally. That is, two sets of pads are arranged in parallel (the first pad 21 and the second pad 22 form one set, and the second pad 23 and the third pad 24 form another set). The second length L2 is the distance from the pressing part 311 to the first pad 21 in the top view (also a horizontal distance). The third length L3 is the distance from the fourth pad 24 to the third pad 23 in the top view (also a horizontal distance). [The difference between the second length L2 and the third length L3 is -200μm to 200μm]. This can be understood as the pressing part 311 being positioned close to the fourth pad 24 during the formation of the first bond wire 31, when the bonding tool moves to a position within 200μm before and after the alignment with the fourth pad 24. This ensures the pressing part 311 is positioned closer to the fourth pad 24 to better avoid the wedge and prevent contact with the wire.

[0055] In some embodiments, the connection between the first solder pad 21 and the third solder pad 23 is a first reference line X1. The length of the orthographic projection of the shortest connection between the fourth solder pad 24 and the first reference line X1 onto the plane S' of the second wire bonding area 102 is a fourth length L4. In a preset position, the length of the orthographic projection of the shortest connection between the wire bonding tool and the first reference line X1 onto the plane S' of the second wire bonding area 102 is a fifth length L5, and the difference between the fifth length L5 and the fourth length L4 is -200μm to 200μm. In the preset position, the length of the orthographic projection of the shortest connection between the wire bonding tool and the first reference line X1 onto the plane S' of the second wire bonding area 102 (the fifth length L5) is also the length of the orthographic projection of the shortest connection between the formed pressing portion 311 and the first reference line X1 onto the plane S' of the second wire bonding area 102. (Refer to...) Figure 11 The fourth length L4 is the horizontal distance between the fourth pad 24 and the third pad 23 in the top view, and the fifth length L5 is the horizontal distance between the pressing part 311 and the first pad 21 in the top view. This can be understood as the pressing down of the wire bonding tool when it moves to a position within 200μm before and after the alignment with the fourth pad 24 during the formation of the first bond wire 31. The pressing part 311 is positioned close to the fourth pad 24 to better avoid the wedge and prevent contact with the wire.

[0056] In some embodiments, refer to Figure 12 The first bonding wire 31 is projected onto the plane S' of the second bonding area 102 as a first projection line PL1. The perpendicular line X3 from the fourth pad 24 to the first projection line PL1 intersects the first projection line PL1 at the first perpendicular foot P1. The length of the line connecting the first perpendicular foot P1 and the first pad 21 projected onto the plane S' of the second bonding area 102 is the perpendicular foot distance L7. The difference between the second length L2 and the perpendicular foot distance L7 is -100μm to 100μm. When the difference between the second length L2 and the perpendicular foot distance L7 is 0, it can be considered that the position of the pressing part 311 is aligned with the position of the fourth pad 24, which can better avoid the wedge. It can be understood that during the formation of the first bonding wire 31, the bonding tool is pressed down when it moves to a position within 200μm before and after the alignment position with the fourth pad 24. This makes the formed pressing part 311 close to the fourth pad 24 to better avoid the wedge and prevent wire collision.

[0057] In some embodiments, the wire structure to be soldered further includes a fifth solder pad 25, a sixth solder pad 26, and a third solder wire 33 connecting the fifth solder pad 25 and the sixth solder pad 26. The fifth solder pad 25 is disposed on the first wire bonding area 101 and located on the side of the first solder pad 21 away from the third solder pad 23, and is adjacent to the first solder pad 21. The sixth solder pad 26 is disposed on the second wire bonding area 102 and located on the side of the second solder pad 22 away from the fourth solder pad 24. The sixth solder pad 26 is adjacent to the second solder pad 22. See also... Figure 11 On the wire structure to be bonded with the third bonding wire 33, the first bonding wire 31 and the second bonding wire 32 are formed. The first bonding wire 31 with the pressing part 311 is formed first, and then the second bonding wire 32 is formed. This avoids the problem of the first bonding wire 31 bending and pressing the third bonding wire 33 due to the cutting tool 200 squeezing the first bonding wire 31 during the formation of the second bonding wire 32. It can prevent the first bonding wire 31 and the third bonding wire 33 from touching and short-circuiting.

[0058] In some embodiments, a third solder pad 23 adjacent to the first solder pad 21 is further disposed on the first wire bonding area 101. A fourth solder pad 24 opposite to the third solder pad is further disposed on the second wire bonding area 102. The orthographic projection of the first solder wire 31 on the plane S' of the second wire bonding area 102 and the orthographic projection of the line connecting the third solder pad 23 and the fourth solder pad 24 on the plane S' of the second wire bonding area 102 intersect at the intersection point X21. The wire bonding method further includes: after forming the first solder wire 31, forming a second solder wire 32 between the third solder pad 23 and the fourth solder pad 24 (causing the wire bonding tool to move the lead wire between the third solder pad 23 and the fourth solder pad 24 to form the second solder wire 32). See reference Figure 14 After the second bonding wire 32 is formed, the second bonding wire 32 will cross the first bonding wire 31. Therefore, the first bonding wire 31 with the pressing part 311 is formed before the second bonding wire 32 is formed, so that when the cutting tool or the wire of the second bonding wire 32 passes over the first bonding wire 31 during the formation of the second bonding wire 32, it is not easy for the cutting tool or the wire of the second bonding wire 32 to collide with the first bonding wire 31 after the second bonding wire 32 is formed.

[0059] Specifically, refer to Figure 14 The orthographic projection length of the line connecting the intersection point X21 and the first solder pad 21 on the plane S' of the second bonding area 102 is the sixth length L6. The difference between the second length L2 and the sixth length L6 is -200μm to 200μm. It can be understood that during the formation of the first solder wire 31, pressing down the soldering tool within 200μm before and after the position corresponding to the intersection point X21 to form a pressing part 311 can better control the formation of the first solder wire 31 at a low position in the area corresponding to the intersection point X21, preventing the occurrence of wire contact problems.

[0060] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A wire bonding method, characterized in that, This invention is applied to a wire bonding structure, the wire bonding structure comprising: a first wire bonding region and a second wire bonding region, wherein a first solder pad is disposed on the first wire bonding region, and a second solder pad is disposed on the second wire bonding region; a third solder pad adjacent to the first solder pad is also disposed on the first wire bonding region; and a fourth solder pad opposite to the third solder pad is also disposed on the second wire bonding region; the projection length of the line connecting the first solder pad and the second solder pad on the plane of the second wire bonding region is a first length. The wire bonding method includes: Step 1: Form a first bonding wire between the first bonding pad and the second bonding pad using a wire bonding tool; Step 2: After forming the first bonding wire, a second bonding wire is formed between the third bonding pad and the fourth bonding pad using a bonding tool; In step 1, a pressing portion is formed on the first bonding wire to provide clearance space for the bonding tool in step 2, so as to avoid the bonding tool from colliding with the first bonding wire. Wherein, the distance between the pressing part and the plane where the second wire bonding area is located is the first height, the first height is less than 400μm and the first height is greater than or equal to one time the wire diameter; the bonding wire includes the first bonding wire and the second bonding wire; the length of the orthographic projection of the line connecting the pressing part and the first pad on the plane where the second wire bonding area is located is the second length, the second length is 20% to 80% of the first length.

2. The wire bonding method as described in claim 1, characterized in that, The wire bonding method specifically includes: The wire bonding tool is used to move the lead wire between the first solder pad and the second solder pad to form the first solder wire; wherein, when the wire bonding tool moves to a preset position, the wire bonding tool is pressed down in the direction close to the second wire bonding area to form the pressing part on the first solder wire, and the first height is less than the tip height of the wire bonding tool.

3. The wire bonding method as described in claim 1, characterized in that, The fourth solder pad is located on the side of the second solder pad that is closer to the first solder pad.

4. The wire bonding method as described in claim 3, characterized in that, The wire structure to be soldered further includes a fifth solder pad, a sixth solder pad, and a third solder wire connecting the fifth solder pad and the sixth solder pad; the fifth solder pad is disposed on the first wire bonding area and located on the side of the first solder pad away from the third solder pad, and the fifth solder pad is adjacent to the first solder pad; the sixth solder pad is disposed on the second wire bonding area and located on the side of the second solder pad away from the fourth solder pad; the sixth solder pad is adjacent to the second solder pad.

5. The wire bonding method as described in claim 1, characterized in that, The orthographic projection of the first bonding wire on the plane where the second bonding area is located intersects the orthographic projection of the line connecting the third and fourth bonding pads on the plane where the second bonding area is located at the intersection point.

6. A semiconductor packaging structure, characterized in that, include: A first wire bonding area is provided with a first solder pad and a third solder pad adjacent to the first solder pad. The second wire bonding area is provided with a second solder pad and a fourth solder pad opposite to the third solder pad. The fourth solder pad is located on the side of the second solder pad that is closer to the first solder pad. The third solder pad and the fourth solder pad are used to connect through a second bonding wire. A wire bond is obtained by the wire bond method as described in claim 1; the wire bond includes a first wire bonded between a first pad and a second pad; the first wire bond has a pressing portion and a first line segment bonded between the pressing portion and the first pad; Wherein, the distance between the pressing part and the plane where the second wire bonding area is located is the first height, the first height is less than 400μm and the first height is greater than or equal to one time the diameter of the bonding wire; the length of the orthographic projection of the first bonding wire on the plane where the second wire bonding area is located is the first length, the length of the orthographic projection of the first line segment on the plane where the second wire bonding area is located is the second length, the second length is 20% to 80% of the first length; the pressing part is located within a range of 200 micrometers before and after the position on the first bonding wire that is aligned with the fourth bonding pad.

7. The semiconductor packaging structure as described in claim 6, characterized in that, The first group of solder pads, consisting of the first solder pad and the second solder pad, is arranged in parallel with the second group of solder pads, consisting of the third solder pad and the fourth solder pad. The length of the orthographic projection of the line connecting the fourth solder pad and the third solder pad on the plane where the second wire bonding area is located is the third length. The difference between the second length and the third length is -200μm to 200μm.

8. The semiconductor packaging structure as described in claim 6, characterized in that, The first group of solder pads, consisting of the first solder pad and the second solder pad, and the second group of solder pads, consisting of the third solder pad and the fourth solder pad, are inclined together; the line connecting the first solder pad and the third solder pad is the first reference line; the length of the orthographic projection of the shortest line connecting the fourth solder pad and the first reference line on the plane where the second wire bonding area is located is the fourth length; the length of the orthographic projection of the shortest line connecting the pressing part and the first reference line on the plane where the second wire bonding area is located is the fifth length, and the difference between the fifth length and the fourth length is -200μm to 200μm.

9. The semiconductor packaging structure as described in claim 6, characterized in that, The first group of solder pads, consisting of the first solder pad and the second solder pad, and the second group of solder pads, consisting of the third solder pad and the fourth solder pad, are inclined together; the orthographic projection of the first solder wire onto the plane where the second bonding area is located is the first projection line; the perpendicular line from the fourth solder pad to the first projection line intersects the first projection line at the first foot of the perpendicular, and the length of the orthographic projection of the line connecting the first foot of the perpendicular and the first solder pad onto the plane where the second bonding area is located is the distance of the perpendicular foot, and the difference between the second length and the distance of the perpendicular foot is -100~100μm.

10. The semiconductor packaging structure according to any one of claims 6 to 9, characterized in that, It also includes a carrier, wherein the first wire bonding area and the second wire bonding area are both located on the surface of the carrier and in different regions of the carrier.

11. The semiconductor packaging structure according to any one of claims 6 to 9, characterized in that, It also includes a first carrier and a second carrier, wherein the first wire bonding area is located on the first carrier and the second wire bonding area is located on the second carrier.

12. A semiconductor packaging structure, characterized in that, include: A first wire bonding area is provided with a first solder pad and a third solder pad adjacent to the first solder pad. The second wire bonding area is provided with a second solder pad and a fourth solder pad opposite to the third solder pad; A wire bond, obtained by the wire bonding method as described in claim 1, wherein the wire bond includes a first wire bond and a second wire bond, the first wire bonded between a first pad and a second pad; the second wire bonded between a third pad and a fourth pad; the second wire bonded above the first wire bond; the first wire bond has a pressing portion and a first segment bonded between the pressing portion and the first pad; Wherein, the distance between the pressing portion and the plane where the second wire bonding area is located is the first height, the first height is less than 400μm and the first height is greater than or equal to one times the diameter of the bonding wire; the length of the orthographic projection of the first bonding wire on the plane where the second wire bonding area is located is the first length, the length of the orthographic projection of the first line segment on the plane where the second wire bonding area is located is the second length, the second length is 20% to 80% of the first length; the orthographic projection of the first bonding wire on the plane where the second wire bonding area is located intersects the orthographic projection of the second bonding wire on the plane where the second wire bonding area is located at the intersection point; the pressing portion is located within a range of 200 micrometers before and after the position on the first bonding wire aligned with the intersection point.

13. The semiconductor packaging structure as described in claim 12, characterized in that, The minimum spacing between the first bonding wire and the second bonding wire is greater than or equal to one time the wire diameter.

14. The semiconductor packaging structure according to any one of claims 12-13, characterized in that, It also includes a carrier, wherein the first wire bonding area and the second wire bonding area are both located on the surface of the carrier and in different regions of the carrier.

15. The semiconductor packaging structure according to any one of claims 12-13, characterized in that, It also includes a first carrier and a second carrier, wherein the first wire bonding area is located on the first carrier and the second wire bonding area is located on the second carrier.

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