Silicon wafer carrier thickness detection method and apparatus, double-side polishing apparatus

Abstract

The application provides a silicon wafer carrier thickness detection method and device and a double-sided polishing equipment. The double-sided polishing equipment comprises oppositely arranged upper and lower polishing discs, the side of the upper polishing disc facing the lower polishing disc is provided with an upper polishing pad, the side of the lower polishing disc facing the upper polishing disc is provided with a lower polishing pad, a plurality of silicon wafer carriers are arranged on the lower polishing pad, the upper polishing disc comprises a first area corresponding to the silicon wafer carrier and a second area except the first area, the orthographic projection of the first area on the lower polishing pad coincides with the orthographic projection of the silicon wafer carrier on the lower polishing pad, and the silicon wafer carrier thickness detection device comprises a first eddy current sensor arranged in the first area, a second eddy current sensor arranged in the second area and a processor used for determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor. The application can monitor the thickness of the silicon wafer carrier in real time, and the thickness of the silicon wafer can be prevented from being substandard.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a silicon wafer carrier thickness detection method and device and double-sided polishing equipment. BACKGROUND

[0002] Chemical mechanical polishing (CMP) refers to a process of using chemical reaction and mechanical friction to planarize a wafer surface. In order to further improve the planarity and cleanliness of the silicon wafer and meet the increasingly stringent process requirements of the semiconductor industry, the process of chemical mechanical polishing is also being continuously optimized.

[0003] In the prior art, the chemical mechanical polishing of the silicon wafer mainly includes two steps of double-sided polishing and final polishing. The double-sided polishing can polish the front surface and the back surface of the silicon wafer at the same time, which is beneficial to quickly remove the damaged layer of the front surface and the back surface of the silicon wafer and preliminarily control the planarity and thickness of the silicon wafer.

[0004] In the double-sided polishing process of the silicon wafer, the thickness of the processed silicon wafer is an important process parameter, and the thickness of the silicon wafer is related to the silicon wafer carrier directly contacted therewith.

[0005] In the double-sided polishing process, a plurality of silicon wafer carriers are arranged on the polishing pad of the lower polishing disc of the double-sided polishing equipment, each silicon wafer carrier carries a plurality of pieces (pcs) of silicon wafers, and each time processing is performed, after the upper polishing disc and the lower polishing disc are combined, pressure is applied, and the rotation of the upper polishing disc and the lower polishing disc and the rotation of the inner and outer pins cause the silicon wafer carrier carrying the silicon wafers to also rotate, and the upper polishing disc flows liquid through the slurry holes, so as to perform chemical mechanical grinding on the processed silicon wafers, thereby achieving the polishing effect.

[0006] The silicon wafer carrier of the double-sided polishing equipment is made of DLC material (amorphous carbon film), and in the long-term polishing process, the silicon wafer carrier is easily affected by the pressure between the upper polishing disc and the lower polishing disc and the slurry, which causes the material of the silicon wafer carrier to be continuously consumed, the thickness of the silicon wafer carrier gradually decreases, and finally the silicon wafers carried by the silicon wafer carrier are excessively thinned, the thickness of the processed silicon wafers is too thin, and the process requirements cannot be met.

[0007] The prior art cannot detect the thickness of the silicon wafer carrier, and the silicon wafer carrier needs to be returned to the manufacturer for detection by using professional detection tools. A large number of silicon wafer products are often found to be defective at the end of the use of the silicon wafer carrier, which affects the polishing process and the yield. SUMMARY

[0008] In order to solve the above technical problems, the present application provides a silicon wafer carrier thickness detection method and device and double-sided polishing equipment, which can monitor the thickness of the silicon wafer carrier in real time and avoid the thickness of the silicon wafer being substandard.

[0009] To achieve the above object, the technical scheme adopted by the embodiment of the present application is:

[0010] A silicon wafer carrier thickness detection device applied to a double-sided polishing equipment, the double-sided polishing equipment comprising an upper polishing plate and a lower polishing plate arranged oppositely, the upper polishing plate being provided with an upper polishing pad on the side facing the lower polishing plate, the lower polishing plate being provided with a lower polishing pad on the side facing the upper polishing plate, a plurality of silicon wafer carriers being arranged on the lower polishing pad, the upper polishing plate comprising a first area corresponding to the silicon wafer carriers and a second area other than the first area, the orthographic projection of the first area on the lower polishing pad coinciding with the orthographic projection of the silicon wafer carriers on the lower polishing pad, the silicon wafer carrier thickness detection device comprising:

[0011] a first eddy current sensor arranged in the first area;

[0012] a second eddy current sensor arranged in the second area;

[0013] a processor configured to determine the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor.

[0014] In some embodiments,

[0015] the processor is specifically configured to, when the first eddy current sensor and the second eddy current sensor are in contact with the upper polishing pad under the pressure applied by the upper polishing plate, subtract the second distance value measured by the second eddy current sensor from the first distance value measured by the first eddy current sensor to obtain the thickness of the silicon wafer carrier.

[0016] In some embodiments,

[0017] the first area is provided with a plurality of first eddy current sensors;

[0018] the second area is provided with a plurality of second eddy current sensors;

[0019] the processor is specifically configured to determine the thickness of the silicon wafer carrier according to the detection data of the plurality of first eddy current sensors and the detection data of the plurality of second eddy current sensors.

[0020] In some embodiments,

[0021] The processor is specifically configured to: when the upper polishing pad is under pressure such that the first eddy current sensors and the second eddy current sensors are both in contact with the upper polishing pad, obtain a first average distance value according to first distance values measured by the first eddy current sensors, obtain a second average distance value according to second distance values measured by the second eddy current sensors, and obtain the thickness of the silicon wafer carrier by subtracting the second average distance value from the first average distance value.

[0022] In some embodiments,

[0023] The silicon wafer carrier thickness detection device further includes:

[0024] The alarm unit is configured to alarm when the thickness of the silicon wafer carrier is less than a threshold value.

[0025] The embodiments of the present application also provide a double-sided polishing device including the silicon wafer carrier thickness detection device.

[0026] The embodiments of the present application also provide a silicon wafer carrier thickness detection method applied to the silicon wafer carrier thickness detection device, and the silicon wafer carrier thickness detection method includes:

[0027] Detecting a distance between the upper polishing pad and the lower polishing pad by using the first eddy current sensors;

[0028] Detecting a distance between the upper polishing pad and the lower polishing pad by using the second eddy current sensors;

[0029] Determining the thickness of the silicon wafer carrier according to detection data of the first eddy current sensors and detection data of the second eddy current sensors.

[0030] In some embodiments,

[0031] The determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensors and the detection data of the second eddy current sensors includes:

[0032] When the upper polishing pad is under pressure such that the first eddy current sensors and the second eddy current sensors are in contact with the upper polishing pad, subtracting second distance values measured by the second eddy current sensors from first distance values measured by the first eddy current sensors to obtain the thickness of the silicon wafer carrier.

[0033] In some embodiments,

[0034] The first region is provided with a plurality of first eddy current sensors, the second region is provided with a plurality of second eddy current sensors, and the determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensors and the detection data of the second eddy current sensors includes:

[0035] The first average distance value is obtained according to first distance values measured by the plurality of first eddy current sensors, the second average distance value is obtained according to second distance values measured by the plurality of second eddy current sensors, and the thickness of the silicon wafer carrier is obtained by subtracting the second average distance value from the first average distance value.

[0036] In some embodiments,

[0037] The method for detecting the thickness of the silicon wafer carrier further comprises:

[0038] An alarm is triggered when the thickness of the silicon wafer carrier is less than a threshold value.

[0039] The present application has the following advantages:

[0040] In the present application, the first eddy current sensors are arranged on the first region of the upper polishing plate corresponding to the silicon wafer carrier, and the second eddy current sensors are arranged on the second region outside the first region. The thickness of the silicon wafer carrier is determined according to the detection data of the first eddy current sensors and the detection data of the second eddy current sensors. The present application can monitor the thickness of the silicon wafer carrier in real time, and thus corresponding measures can be taken when the thickness of the silicon wafer carrier does not meet the standard, so as to avoid the situation that the thickness of the silicon wafer does not meet the standard. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 FIG. 1 shows a cross-sectional view of a double-side polishing apparatus according to an embodiment of the present application;

[0042] Figure 2 FIG. 2 shows a plan view of the double-side polishing apparatus according to an embodiment of the present application.

[0043] REFERENCE NUMERALS

[0044] 01 lower polishing plate

[0045] 02 upper polishing plate

[0046] 03 lower polishing pad

[0047] 04 upper polishing pad

[0048] 05 silicon wafer carrier

[0049] 06 second eddy current sensor

[0050] 07 first eddy current sensor

[0051] 08 silicon wafer accommodating hole

[0052] 09 silicon wafer DETAILED DESCRIPTION

[0053] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the described embodiments of the present application, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present application.

[0054] The present application provides a silicon wafer carrier thickness detection method and device and a double-sided polishing equipment, which can monitor the thickness of the silicon wafer carrier in real time and avoid the thickness of the silicon wafer not meeting the standard.

[0055] The present application provides a silicon wafer carrier thickness detection device, which is applied to a double-sided polishing equipment, as shown in Figure 1 and Figure 2 The double-sided polishing equipment includes oppositely arranged upper and lower grinding discs 02 and 01, the upper grinding disc 02 is provided with an upper polishing pad 04 on the side facing the lower grinding disc 01, the lower grinding disc 01 is provided with a lower polishing pad 03 on the side facing the upper grinding disc 02, a plurality of silicon wafer carriers 05 are arranged on the lower polishing pad 03, the silicon wafer carrier 05 includes a silicon wafer accommodating hole 08, a silicon wafer 09 is placed in the silicon wafer accommodating hole 08, the upper grinding disc 02 includes a first area corresponding to the silicon wafer carrier 05 and a second area except the first area, the orthographic projection of the first area on the lower polishing pad 03 coincides with the orthographic projection of the silicon wafer carrier 05 on the lower polishing pad 03, and the silicon wafer carrier thickness detection device includes:

[0056] A first eddy current sensor 07 is arranged in the first area;

[0057] A second eddy current sensor 06 is arranged in the second area;

[0058] A processor is configured to determine the thickness of the silicon wafer carrier 05 according to the detection data of the first eddy current sensor 07 and the detection data of the second eddy current sensor 06.

[0059] In the embodiment of the present application, the first eddy current sensor 07 is arranged on the first area of the upper polishing disc 02 corresponding to the silicon wafer carrier 05, and the second eddy current sensor 06 is arranged on the second area outside the first area, and the thickness of the silicon wafer carrier 05 is determined according to the detection data of the first eddy current sensor 07 and the detection data of the second eddy current sensor 06. The embodiment can monitor the thickness of the silicon wafer carrier 05 in real time, and then corresponding measures can be taken when the thickness of the silicon wafer carrier 05 does not meet the standard, so as to avoid the situation that the thickness of the silicon wafer 09 does not meet the standard. The embodiment can conveniently and efficiently control the thickness of the silicon wafer carrier 05, reduce the maintenance cost of the silicon wafer carrier 05, save manpower, and reduce the loss of production capacity.

[0060] In the double-sided polishing equipment, the upper polishing disc 02 and the lower polishing disc 01 are both made of metal, and the upper polishing pad 04, the lower polishing pad 03, the silicon wafer 09 and the silicon wafer carrier 05 are all non-metal materials. By using this characteristic, the thickness of the silicon wafer carrier 05 can be obtained by using the eddy current sensor. The eddy current sensor has a probe, and a high-frequency oscillation current in the preamplifier of the eddy current sensor flows into the probe coil, generating an alternating magnetic field in the coil at the head of the probe. When the measured metal body approaches this magnetic field, an induced current is generated on the surface of the metal body, and at the same time, the eddy current sensor also generates an alternating magnetic field in the opposite direction of the probe head coil. According to the strength of the magnetic field, the distance from the probe head coil to the surface of the metal body can be calculated. Therefore, by arranging the eddy current sensor on the upper polishing disc 02, the distance between the upper polishing disc 02 and the lower polishing disc 01 can be obtained, and the measurement of the distance will not be affected by the upper polishing pad 04, the lower polishing pad 03, the silicon wafer 09 and the silicon wafer carrier 05.

[0061] In some embodiments,

[0062] The processor is specifically configured to subtract the second distance value measured by the second eddy current sensor 06 from the first distance value measured by the first eddy current sensor 07 to obtain the thickness of the silicon wafer carrier 05 when the first eddy current sensor 07 and the second eddy current sensor 06 are in contact with the upper polishing pad 04.

[0063] As Figure 1 and Figure 2As shown, in the embodiment, when the upper polishing plate 02 and the lower polishing plate 01 are combined at the original position for starting, the pressure is applied to the upper polishing plate 02, so that the first eddy current sensor 07 and the second eddy current sensor 06 are in contact with the polishing pad and the silicon wafer carrier 05. The second eddy current sensor 06 in the second area of the upper polishing plate 02 is not in contact with the silicon wafer carrier 05. The distance between the upper polishing plate 02 and the lower polishing plate 01 measured through the upper polishing pad 04 and the lower polishing pad 03 is a second distance value (i.e. gap 1), which is the sum of the thicknesses of the upper polishing pad 04 and the lower polishing pad 03. The first eddy current sensor 07 in the first area of the upper polishing plate 02 is in contact with the silicon wafer carrier 05. The distance between the upper polishing plate 02 and the lower polishing plate 01 measured through the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03 is a first distance value (i.e. gap 2), which is the sum of the thicknesses of the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03. Therefore, the thickness of the silicon wafer carrier 05 can be obtained by subtracting the second distance value measured by the second eddy current sensor 06 from the first distance value measured by the first eddy current sensor 07.

[0064] In some embodiments, in order to increase the accuracy of the obtained thickness of the silicon wafer carrier 05,

[0065] The first area can be provided with a plurality of first eddy current sensors 07, and the plurality of first eddy current sensors 07 are uniformly distributed in the first area.

[0066] The second area is provided with a plurality of second eddy current sensors 06, and the plurality of second eddy current sensors 06 are uniformly distributed in the second area.

[0067] The processor is specifically configured to determine the thickness of the silicon wafer carrier 05 according to the detection data of the plurality of first eddy current sensors 07 and the detection data of the plurality of second eddy current sensors 06.

[0068] In some embodiments,

[0069] The processor is specifically configured to, when the upper polishing plate 02 applies pressure so that the plurality of first eddy current sensors 07 and the plurality of second eddy current sensors 06 are in contact with the upper polishing pad 04, obtain a first average distance value according to the first distance values measured by the plurality of first eddy current sensors 07, obtain a second average distance value according to the second distance values measured by the plurality of second eddy current sensors 06, and obtain the thickness of the silicon wafer carrier 05 by subtracting the second average distance value from the first average distance value.

[0070] In the embodiment, when the upper polishing plate 02 and the lower polishing plate 01 are combined at the original position, the pressure is applied to the upper polishing plate 02, so that the first eddy current sensor 07 and the second eddy current sensor 06 are in contact with the polishing pad and the silicon wafer carrier 05, the second eddy current sensor 06 in the second area of the upper polishing plate 02 is not in contact with the silicon wafer carrier 05, the distance between the upper polishing plate 02 and the lower polishing plate 01 measured through the upper polishing pad 04 and the lower polishing pad 03 is a second distance value, the second distance value is the sum of the thicknesses of the upper polishing pad 04 and the lower polishing pad 03, the second distance values measured by the plurality of second eddy current sensors 06 are averaged to obtain a second average distance value; the first eddy current sensor 07 in the first area of the upper polishing plate 02 is in contact with the silicon wafer carrier 05, the distance between the upper polishing plate 02 and the lower polishing plate 01 measured through the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03 is a first distance value, the first distance value is the sum of the thicknesses of the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03, the first distance values measured by the plurality of first eddy current sensors 07 are averaged to obtain a first average distance value. The thickness of the silicon wafer carrier 05 can be obtained by subtracting the second average distance value from the first average distance value.

[0071] In some embodiments,

[0072] The silicon wafer carrier thickness detection device further comprises:

[0073] The alarm unit is configured to alarm when the thickness of the silicon wafer carrier 05 is less than the threshold value.

[0074] In the embodiment, when the thickness of the silicon wafer carrier 05 is less than the threshold value, the silicon wafer carrier 05 does not meet the process processing requirements, and needs to be repaired or replaced, and the alarm unit can prompt the operator in various ways such as flashing light, alarm sound, email notification, etc., so that the operator can repair or replace the silicon wafer carrier 05 in time, avoid the situation that the thickness of the silicon wafer does not meet the standard, and ensure that the silicon wafer processed by the double-sided polishing equipment meets the process parameters.

[0075] The embodiment of the present application also provides a double-sided polishing equipment comprising the silicon wafer carrier thickness detection device.

[0076] The embodiment of the present application also provides a silicon wafer carrier thickness detection method applied to the silicon wafer carrier thickness detection device, and the silicon wafer carrier thickness detection method comprises:

[0077] The first eddy current sensor is used to detect the distance between the upper polishing plate and the lower polishing plate;

[0078] The second eddy current sensor is used to detect the distance between the upper polishing plate and the lower polishing plate;

[0079] determine the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor.

[0080] In the embodiment, the first eddy current sensor 07 is arranged at the first area of the upper polishing disc 02 corresponding to the silicon wafer carrier 05, and the second eddy current sensor 06 is arranged at the second area outside the first area. The thickness of the silicon wafer carrier 05 is determined according to the detection data of the first eddy current sensor 07 and the detection data of the second eddy current sensor 06. The embodiment can monitor the thickness of the silicon wafer carrier 05 in real time, and thus corresponding measures can be taken when the thickness of the silicon wafer carrier 05 does not meet the standard, so as to avoid the situation that the thickness of the silicon wafer 09 does not meet the standard. The embodiment can conveniently and efficiently control the thickness of the silicon wafer carrier 05, reduce the maintenance cost of the silicon wafer carrier 05, save manpower, and reduce the loss of production capacity.

[0081] In some embodiments,

[0082] The determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor comprises:

[0083] When the first eddy current sensor and the second eddy current sensor are in contact with the upper polishing pad, the first distance value measured by the first eddy current sensor is subtracted by the second distance value measured by the second eddy current sensor to obtain the thickness of the silicon wafer carrier.

[0084] As shown in Figure 1 and Figure 2 In the embodiment, when the upper polishing disc 02 and the lower polishing disc 01 are combined at the original position to start, the pressure is applied to the upper polishing disc 02, so that the first eddy current sensor 07 and the second eddy current sensor 06 are in contact with the polishing pad and the silicon wafer carrier 05. The second eddy current sensor 06 located in the second area of the upper polishing disc 02 is not in contact with the silicon wafer carrier 05. The distance from the upper polishing disc 02 to the lower polishing disc 01 measured through the upper polishing pad 04 and the lower polishing pad 03 is a second distance value (i.e. gap 1), and the second distance value is the sum of the thicknesses of the upper polishing pad 04 and the lower polishing pad 03. The first eddy current sensor 07 located in the first area of the upper polishing disc 02 is in contact with the silicon wafer carrier 05. The distance from the upper polishing disc 02 to the lower polishing disc 01 measured through the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03 is a first distance value (i.e. gap 2), and the first distance value is the sum of the thicknesses of the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03. Therefore, the thickness of the silicon wafer carrier 05 can be obtained by subtracting the second distance value measured by the second eddy current sensor 06 from the first distance value measured by the first eddy current sensor 07.

[0085] In some embodiments,

[0086] The first area is provided with a plurality of first eddy current sensors; the second area is provided with a plurality of second eddy current sensors; the thickness of the silicon wafer carrier is determined according to the detection data of the first eddy current sensors and the detection data of the second eddy current sensors, comprising:

[0087] When the upper polishing pad is applied with pressure so that the plurality of first eddy current sensors and the plurality of second eddy current sensors are in contact with the upper polishing pad, a first average distance value is obtained according to first distance values measured by the plurality of first eddy current sensors, a second average distance value is obtained according to second distance values measured by the plurality of second eddy current sensors, and the thickness of the silicon wafer carrier is obtained by subtracting the second average distance value from the first average distance value.

[0088] In the embodiment, when the upper polishing plate 02 and the lower polishing plate 01 are combined at the original position, the upper polishing plate 02 is applied with pressure so that the first eddy current sensors 07 and the second eddy current sensors 06 are in contact with the polishing pad and the silicon wafer carrier 05, the second eddy current sensors 06 in the second area of the upper polishing plate 02 are not in contact with the silicon wafer carrier 05, the distance from the upper polishing plate 02 to the lower polishing plate 01 is measured through the upper polishing pad 04 and the lower polishing pad 03 as a second distance value, the second distance value is the sum of the thicknesses of the upper polishing pad 04 and the lower polishing pad 03, the second distance values measured by the plurality of second eddy current sensors 06 are averaged to obtain a second average distance value, the first eddy current sensors 07 in the first area of the upper polishing plate 02 are in contact with the silicon wafer carrier 05, the distance from the upper polishing plate 02 to the lower polishing plate 01 is measured through the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03 as a first distance value, the first distance value is the sum of the thicknesses of the upper polishing pad 04, the silicon wafer carrier 05 and the lower polishing pad 03, the first distance values measured by the plurality of first eddy current sensors 07 are averaged to obtain a first average distance value. The thickness of the silicon wafer carrier 05 is obtained by subtracting the second average distance value from the first average distance value.

[0089] In some embodiments, the method for detecting the thickness of the silicon wafer carrier further comprises:

[0090] When the thickness of the silicon wafer carrier is less than a threshold value, an alarm is given.

[0091] In the embodiment, when the thickness of the silicon wafer carrier 05 is less than a threshold value, the silicon wafer carrier 05 does not meet the process processing requirements and needs to be repaired or replaced, and the alarm unit can prompt the operator in various ways such as flashing light, alarm sound, email notification, etc. so as to repair or replace the silicon wafer carrier 05 in time, avoid the situation that the thickness of the silicon wafer does not meet the requirements, and ensure that the silicon wafers processed by the double-sided polishing equipment meet the process parameters.

[0092] It should be noted that each of the embodiments described in the specification adopt a progressive manner, and the same or similar parts between the embodiments can be referred to each other. Each embodiment focuses on the difference from other embodiments. In particular, the product embodiment is described more simply because it is basically similar to the product embodiment, and the relevant part can be referred to the part of the product embodiment.

[0093] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meaning of those skilled in the art to which the present disclosure pertains. The terms "first", "second", and the like used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The terms "include", "contain", and the like mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and the like do not mean physical or mechanical connection, but can include electrical connection, whether direct or indirect. The terms "upper", "lower", "left", "right", and the like are only used to indicate relative positional relationships, and when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0094] It can be understood that when an element such as a layer, a film, a region, or a substrate is referred to as being "on" or "under" another element, it can be "directly" on or under the other element, or an intermediate element can be present.

[0095] In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0096] The above description is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A silicon wafer carrier thickness detection apparatus, characterized by, The silicon wafer carrier thickness detection device is applied to a double-sided polishing equipment, the double-sided polishing equipment comprises oppositely arranged upper and lower polishing discs, the upper polishing disc is provided with an upper polishing pad on the side facing the lower polishing disc, the lower polishing disc is provided with a lower polishing pad on the side facing the upper polishing disc, a plurality of silicon wafer carriers are arranged on the lower polishing pad, the upper polishing disc comprises a first area corresponding to the silicon wafer carrier and a second area except the first area, the orthographic projection of the first area on the lower polishing pad coincides with the orthographic projection of the silicon wafer carrier on the lower polishing pad, and the silicon wafer carrier thickness detection device comprises: a first eddy current sensor arranged in the first area; a second eddy current sensor arranged in the second area; a processor configured to determine the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor.

2. The silicon wafer carrier thickness detection device according to claim 1, wherein the processor is specifically configured to subtract a second distance value measured by the second eddy current sensor from a first distance value measured by the first eddy current sensor to obtain the thickness of the silicon wafer carrier when the first eddy current sensor and the second eddy current sensor are in contact with the upper polishing pad under the pressure applied by the upper polishing disc.

3. The silicon wafer carrier thickness detection device according to claim 1, wherein the first area is provided with a plurality of first eddy current sensors; the second area is provided with a plurality of second eddy current sensors; and the processor is specifically configured to determine the thickness of the silicon wafer carrier according to the detection data of the plurality of first eddy current sensors and the detection data of the plurality of second eddy current sensors.

4. The silicon wafer carrier thickness detection device according to claim 3, wherein the processor is specifically configured to obtain a first average distance value according to the first distance values measured by the plurality of first eddy current sensors and obtain a second average distance value according to the second distance values measured by the plurality of second eddy current sensors, and subtract the second average distance value from the first average distance value to obtain the thickness of the silicon wafer carrier when the plurality of first eddy current sensors and the plurality of second eddy current sensors are in contact with the upper polishing pad under the pressure applied by the upper polishing disc. The silicon wafer carrier thickness detection device further comprises: an alarm unit configured to alarm when the thickness of the silicon wafer carrier is less than a threshold value. The double-sided polishing equipment comprises the silicon wafer carrier thickness detection device. The silicon wafer carrier thickness detection method is applied to the silicon wafer carrier thickness detection device, and comprises the following steps: detecting the distance between the upper and lower polishing discs by using the first eddy current sensor; 5. The apparatus of claim 1 wherein, detecting the distance between the upper and lower polishing discs by using the second eddy current sensor; determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor.

6. A double-side polishing apparatus characterized by comprising: ​ 7. A method for detecting the thickness of a silicon wafer carrier, characterized in that, ​ ​ ​ ​ 8. The method of claim 7, wherein the step of detecting the thickness of the silicon wafer carrier is performed by a thickness detector. The determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor comprises: The first distance value measured by the first eddy current sensor is subtracted by the second distance value measured by the second eddy current sensor to obtain the thickness of the silicon wafer carrier when the first eddy current sensor and the second eddy current sensor are in contact with the upper polishing pad under the pressure applied by the upper grinding disc.

9. The method of claim 7, wherein the step of detecting the thickness of the silicon wafer carrier is performed by a thickness detector. The first region is provided with a plurality of first eddy current sensors; the second region is provided with a plurality of second eddy current sensors; the determining the thickness of the silicon wafer carrier according to the detection data of the first eddy current sensor and the detection data of the second eddy current sensor comprises: The first average distance value is obtained according to the first distance values measured by the plurality of first eddy current sensors, and the second average distance value is obtained according to the second distance values measured by the plurality of second eddy current sensors, and the first average distance value is subtracted by the second average distance value to obtain the thickness of the silicon wafer carrier when the plurality of first eddy current sensors and the plurality of second eddy current sensors are in contact with the upper polishing pad under the pressure applied by the upper grinding disc.

10. The method of claim 7, wherein the step of detecting the thickness of the silicon wafer carrier is performed by a thickness detector. The silicon wafer carrier thickness detection method further comprises: An alarm is given when the thickness of the silicon wafer carrier is less than a threshold value.

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