Continuous plasma processing system with lift-off electrodes
By using a continuous plasma process system with a lifting electrode, the lifting and lowering of the second electrode is controlled by a displacement device to form an interval distance, which solves the problem of conductivity between the carrier and the workpiece to be processed, improves process efficiency and yield, and reduces carrier contamination and maintenance costs.
Patent Information
- Application Number
- CN202210848116.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-07-19
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2042-07-19
AI Technical Summary
During plasma processing, particle deposition on the carrier disk causes the carrier disk to become conductive with the workpiece to be processed, affecting the efficiency and yield of the plasma process. Furthermore, existing technologies present the challenge of inconvenient cleaning.
A continuous plasma process system with a lifting electrode is adopted. The lifting and lowering of the second electrode is controlled by a displacement device to form an interval, which avoids the carrier disk from conducting with the workpiece to be processed, and the plasma range is limited by grounding through an elastic conductive element.
It effectively avoids the reduction in process efficiency and damage to the equipment caused by the contact between the carrier and the workpiece in the plasma process, improves the process yield and reduces carrier contamination and maintenance costs.
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Figure CN117448756B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a plasma process-related technology, and more particularly to a continuous plasma process system with a rising electrode. Background Technology
[0002] Plasma processing is one of the most widely used technologies in semiconductor manufacturing. However, the particles generated during the plasma process not only deposit on the surface of the object to be processed, but also adhere to the surface of the carrier disk that carries the object to be processed. If the amount of particles deposited on the carrier disk is large enough, the carrier disk may become connected to the object to be processed, thus affecting subsequent processes.
[0003] For example, when the carrier pad becomes conductive due to being covered by sputtered particles, it may cause a connection between the carrier pad and the workpiece to be processed. This can affect the electric field of the plasma process, making it easier for plasma particles to disperse or diffuse, thus reducing the efficiency of the plasma process. It can also easily cause short circuits in the processing equipment, damaging it and affecting the yield of the processed workpiece. In addition, because the carrier pad is reused, the particles generated on the carrier pad during plasma treatment need to be scraped or cleaned to avoid contaminating the next plasma process, which is quite inconvenient. Summary of the Invention
[0004] The main objective of this invention is to solve the problem that the plasma electric field is affected by particle adhesion generated during plasma processing on the carrier disk carrying the object to be processed.
[0005] To achieve the above objectives, the present invention provides a continuous plasma process system with a lifting electrode, comprising: a frame-shaped carrier, an infeed cavity, a processing cavity, and an outfeed cavity; the frame-shaped carrier is used to carry a workpiece to be processed; the infeed cavity is used to input the workpiece to be processed; the processing cavity is connected to the infeed cavity, and the processing cavity receives the workpiece to be processed and performs plasma processing on the workpiece to be processed; the processing cavity has a first electrode, a second electrode, and a displacement device; the first electrode and the second electrode are disposed opposite to each other at both ends of the processing cavity and form a processing space; the displacement device is connected to the second electrode; when the frame-shaped carrier moves to the processing space, the displacement device can control the second electrode to be in a de-energized position or a conductive position; when the second electrode is away from the first electrode and does not contact the workpiece to be processed, the second electrode is in the de-energized position; and when the second electrode moves towards the first electrode and passes through the frame-shaped carrier, abuts against the workpiece to be processed, and detaches from the frame-shaped carrier, the second electrode is in the conductive position; the outfeed cavity is connected to the processing cavity, and the outfeed cavity receives and outputs the processed workpiece to be processed.
[0006] Furthermore, the first electrode and the second electrode are disposed opposite each other in a vertical direction in the processing cavity, and the continuous plasma process system also has a transfer device for the frame-shaped carrier to be displaced in a horizontal direction in the processing cavity.
[0007] Furthermore, the displacement device has a driving member and a moving member, the moving member being displaced by the driving member and driving the second electrode to displace.
[0008] Furthermore, the processing cavity has a platform, and the displacement device also has a connecting plate. One end of the driving member is connected to the platform, and the other end pushes against the connecting plate. One end of the moving member is connected to the connecting plate, and the other end passes through the platform and contacts the second electrode. The connecting plate is displaced by the action of the driving member, which in turn causes the moving member and the second electrode to be displaced.
[0009] Furthermore, a horizontal adjustment module is provided between the driving component and the moving component. One end of the moving component is connected to the horizontal adjustment module, and the other end is in contact with the second electrode. The horizontal adjustment module can change the vertical distance between the connecting plate and the moving component, thereby adjusting the levelness of the second electrode.
[0010] Furthermore, the platform is provided with a limiting part, and the connecting plate is provided with a distance adjustment module corresponding to the limiting part. The limiting part can abut against the distance adjustment module to limit the movement distance of the displacement device in the direction of the first electrode, and the distance adjustment module can adjust the size of the movement distance.
[0011] Furthermore, the displacement device has an elastic conductive element on one side connected to the second electrode that corresponds to the position of the frame-shaped carrier. When the second electrode is in the conductive position, the elastic conductive element contacts the frame-shaped carrier.
[0012] Furthermore, when the second electrode is located at the conductive position, there is a gap between the workpiece and the frame-shaped carrier.
[0013] Furthermore, the interval is 1 mm to 3 mm.
[0014] Furthermore, the processing cavity also has a clamping device, which is fixed in the processing space to fix the workpiece to be processed.
[0015] Furthermore, when the second electrode is in the conductive position, the second electrode and the clamping device are respectively clamped and fixed to the workpiece from both sides. Thus, the continuous plasma process system with a lifting electrode of the present invention can control the second electrode to move towards the first electrode via a displacement device, causing the second electrode to pass through the frame-shaped carrier and the workpiece to be lifted by the frame-shaped carrier. This creates a plasma-free zone between the frame-shaped carrier and the workpiece, avoiding the impact of conductivity between the frame-shaped carrier and the workpiece on the plasma process, thereby preventing problems such as reduced process efficiency, machine damage, and poor process yield. Attached Figure Description
[0016] Figure 1This is a schematic diagram of the appearance of the plasma process system according to an embodiment of the present invention;
[0017] Figure 2 This is a schematic cross-sectional view of the processing cavity according to an embodiment of the present invention;
[0018] Figure 3 for Figure 2 A partially enlarged schematic diagram (I) is shown to indicate that the second electrode is in the de-energized position;
[0019] Figure 4 for Figure 2 A partially enlarged schematic diagram (II) is shown to indicate that the second electrode is located in a conductive position;
[0020] Figure 5 for Figure 4 A partially enlarged schematic diagram is provided to show the distance between the workpiece and the frame-shaped carrier.
[0021] Figures 6a to 6b For the present invention Figure 2 A partially enlarged schematic diagram (III) is shown to illustrate the levelness of the second electrode adjusted by the leveling module.
[0022] Explanation of reference numerals in the attached figures
[0023] 1: Workpiece to be processed; 100: Continuous plasma process system; 10: Frame-shaped carrier; 20: Loading cavity; 30: Processing cavity; 31: First electrode; 32: Second electrode; 33: Displacement device; 331: Driving component; 332: Moving component; 333: Elastic conductive component; 334: Connecting plate; 34: Horizontal adjustment module; 35: Distance adjustment module; 36: Clamping device; 37: Platform; 371: Limiting part; 40: Loading cavity; 50: Transmission device; S: Processing space; d1: Interval distance; P1: Power-off position; P2: Conductive position. Detailed Implementation
[0024] To facilitate the explanation of the central idea of the invention as stated in the above-mentioned description of the invention, specific embodiments are described below. Various objects in the embodiments are depicted according to a scale, size, deformation, or displacement suitable for illustration, rather than being drawn to the scale of actual components, as will be stated prior.
[0025] Please see Figures 1 to 6b As shown, the present invention provides a continuous plasma process system 100 with a lifting electrode, which includes a frame-shaped carrier disk 10, a loading cavity 20, a processing cavity 30, a loading cavity 40, and a transfer device 50.
[0026] In this embodiment, the loading cavity 20, the processing cavity 30, and the unloading cavity 40 are arranged sequentially and interconnected (e.g., ...). Figure 1As shown, the transmission device 50 is continuously disposed in the loading cavity 20, the processing cavity 30 and the unloading cavity 40. The loading cavity 20 is used to input a workpiece 1 to be processed. The processing cavity 30 can receive the workpiece 1 to be processed and perform plasma treatment on the workpiece 1. The unloading cavity 40 can receive and output the processed workpiece 1. The transmission device 50 provides a frame-shaped carrier plate 10 to be displaced in a horizontal direction in the loading cavity 20, the processing cavity 30 and the unloading cavity 40.
[0027] The frame-shaped carrier 10 is used to carry the workpiece 1 to be processed. The frame-shaped carrier 10 is placed on the transmission device 50. The workpiece 1 to be processed is driven from the loading cavity 20 into the processing cavity 30 by the dragging of the transmission device 50, and is horizontally displaced in the direction of the loading cavity 40. In this embodiment, the frame-shaped carrier 10 is made of conductive material.
[0028] The processing cavity 30 has a first electrode 31, a second electrode 32, and a displacement device 33, such as Figure 2 As shown, the first electrode 31 and the second electrode 32 are disposed opposite to each other at both ends of the processing cavity 30 and form a processing space S. The displacement device 33 is connected to the second electrode 32. The first electrode 31 and the second electrode 32 are disposed opposite to each other in a vertical direction in the processing cavity 30.
[0029] In this embodiment, the first electrode 31 and the second electrode 32 are respectively coupled to a radio frequency power supply, which can provide radio frequency energy to the first electrode 31 and the second electrode 32 to generate plasma and perform plasma processing on the workpiece 1. Of course, one of the first electrode 31 and the second electrode 32 can also be coupled to a power supply, while the other electrode is grounded, which can also form an electric field in the processing cavity 30 to perform plasma processing.
[0030] In this embodiment, after the frame-shaped carrier 10 moves to the processing space S, the displacement device 33 can control the second electrode 32 to be in a de-energized position P1 or a conductive position P2, such as... Figure 2 , Figure 3 As shown, when the second electrode 32 is away from the first electrode 31 and not in contact with the workpiece 1, the second electrode 32 is in the de-energized position P1; as Figure 2 , Figure 4 As shown, when the second electrode 32 moves toward the first electrode 31 and passes through the frame-shaped carrier 10, and the second electrode 32 abuts against the workpiece 1 and detaches from the frame-shaped carrier 10, the second electrode 32 is located at the conductive position P2. It should be noted that, in this application, the first electrode 31 and the second electrode 32 are arranged in a vertical direction as an example, and the second electrode 32 moves in a vertical direction, passes through the frame-shaped carrier 10, and abuts against the workpiece 1.
[0031] In this embodiment, when the second electrode 32 is in the power-off position P1, the radio frequency power supply will not be activated to provide radio frequency energy to the first electrode 31 and the second electrode 32; when the second electrode 32 is in the conductive position P2, the radio frequency power supply is activated to generate plasma between the first electrode 31 and the second electrode 32, so that the workpiece 1 can be plasma-treated.
[0032] The displacement device 33 has a driving member 331 and a moving member 332 that is linked to the driving member 331. The moving member 332 is displaced by the driving member 331 and drives the second electrode 32 to be displaced. The driving member 331 can drive the moving member 332 to move towards the first electrode 31 and make the second electrode 32 pass through the frame-shaped carrier 10 to reach the conductive position P2. In this embodiment, the driving member 331 can be a pneumatic cylinder or a hydraulic cylinder, etc.
[0033] For further explanation, please refer to the following: Figure 3 and Figure 4 As shown, in this embodiment, the processing cavity 30 also has a platform 37, and the displacement device 33 also has a connecting plate 334. The platform 37 is fixed, while the driving member 331 drives the displacement device 33 to move vertically upward by raising the connecting plate 334, so that the second electrode 32 passes through the frame-shaped carrier plate 10 and abuts against the workpiece 1 to be processed.
[0034] In this embodiment, the displacement device 33 further includes an elastic conductive element 333, which is disposed on the side of the moving member 332 connected to the second electrode 32, and corresponds to the position of the frame-shaped carrier 10, such as... Figure 4 As shown, when the second electrode 32 is located at the conductive position P2, the elastic conductive element 333 can simultaneously contact the bottom of the frame-shaped carrier disk 10; in this embodiment, the elastic conductive element 333 can be beryllium copper.
[0035] In this embodiment, as Figures 4 to 5 As shown, when the second electrode 32 is located at the conductive position P2, there is a gap distance d1 between the workpiece 1 and the frame-shaped carrier disk 10; in this embodiment, the gap distance d1 is 1 mm to 3 mm.
[0036] The movable component 332 actually provides a grounding path for the elastic conductive component 333. When the elastic conductive component 333 contacts the frame-shaped carrier 10, it connects the frame-shaped carrier 10 to the grounding path, thus grounding it. Grounding the frame-shaped carrier 10 effectively limits the plasma's range and prevents plasma dispersion. Furthermore, during plasma treatment of the workpiece 1, since the workpiece 1 and the frame-shaped carrier 10 are actually spaced apart by a distance d1, it prevents particles generated during plasma treatment from forming between the frame-shaped carrier 10 and the workpiece 1, thus avoiding electrical conductivity between them.
[0037] The processing cavity 30 has a horizontal adjustment module 34, a distance adjustment module 35 and a clamping device 36. The horizontal adjustment module 34 is located between the driving member 331 and the moving member 332. The distance adjustment module 35 is located on both sides of the end of the moving member 332 away from the second electrode 32. The clamping device 36 is fixed in the processing space S.
[0038] The horizontal adjustment module 34 is used to adjust the horizontality of the second electrode 32 to ensure the horizontal accuracy of the process equipment. In this embodiment, one end of the moving member 332 is connected to the connecting plate 334 through the horizontal adjustment module 34, and the other end passes through the platform 37 and contacts the second electrode 32. The connecting plate 334 is displaced by the action of the driving member 331 and drives the moving member 332 and the second electrode 32 to move.
[0039] like Figures 6a to 6b As shown, the horizontal adjustment module 34 can change the vertical distance between the connecting plate 334 and the moving part 332 by adjusting its length, thereby correcting the levelness of the second electrode 32; in this embodiment, the horizontal adjustment module 34 is a screw and a nut.
[0040] In addition to the above-mentioned method of adjusting the vertical distance between the connecting plate 334 and the moving member 332 by adjusting the horizontal adjustment module 34, in other possible embodiments (not shown), the driving member 331 can also directly abut against the horizontal adjustment module 34, one end of the moving member 332 is connected to the horizontal adjustment module 34, and the other end face contacts the second electrode 32. The horizontal adjustment module 34 can change the vertical distance between the driving member 331 and the moving member 332 by adjusting its length, thereby correcting the levelness of the second electrode 32.
[0041] The distance adjustment module 35 is used to accommodate frame-shaped carrier trays 10 of different sizes or workpieces 1 of different sizes, and to limit the movement distance of the second electrode 32 towards the first electrode 31. In this embodiment, the platform 37 is provided with a limiting part 371, and the distance adjustment module 35 is disposed on the connecting plate 334 and corresponds to the position of the limiting part 371. When the displacement device 33 drives the second electrode 32 to move towards the first electrode 31, such as Figure 4 As shown, the limiting part 371 can limit the moving distance of the displacement device 33 towards the first electrode 31 by abutting the distance adjustment module 35, and the distance adjustment module 35 can adjust the size of the moving distance by adjusting its length; in this embodiment, the distance adjustment module 35 is a screw and a nut.
[0042] The clamping device 36 is used to fix the outer edge of the workpiece 1, thereby preventing the workpiece 1 from warping due to heat during the plasma treatment process. Figure 4As shown, when the displacement device 33 controls the second electrode 32 to move the workpiece 1 towards the first electrode 31 and detach it from the frame carrier 10, and the second electrode 32 is positioned at the conductive position P2, the second electrode 32 and the clamping device 36 are respectively clamped and fixed to the workpiece 1 from both vertical sides. This prevents the workpiece 1 from bending and warping due to heat, which would affect the coating effect.
[0043] In this embodiment, after the plasma process is completed, the displacement device 33 controls the second electrode 32 to move away from the first electrode 31, so that the processed workpiece 1 is carried on the frame-shaped carrier 10, and the second electrode 32 is in the de-energized position P1, and moves to the loading cavity 40 through the transmission device 50.
[0044] In summary, the present invention has the following advantages:
[0045] 1. The second electrode 32 is controlled by the displacement device 33 to lift the workpiece 1 and to make the frame carrier 10 and the workpiece 1 have a gap distance d1, so as to avoid the impact of the frame carrier 10 and the workpiece 1 on the plasma process, thereby avoiding the problems of reduced process efficiency, machine damage and poor process yield.
[0046] Second, when the second electrode 32 is located at the conductive position P2, the elastic conductive element 333 can simultaneously contact the bottom of the frame-shaped carrier 10 to form a grounding path. During the plasma process, the frame-shaped carrier 10 is grounded, which further concentrates the plasma clusters at the position of the workpiece 1. This avoids the situation where particles generated by the plasma process cause the frame-shaped carrier 10 and the workpiece 1 to become electrically connected, which could lead to damage to the machine. It also avoids the problem of reduced process efficiency and poor process yield caused by the dispersion of plasma clusters during etching.
[0047] Third, by using the frame-shaped carrier 10, the second electrode 32, and the displacement device 33, the frame-shaped carrier 10 is simply used to carry the workpiece 1 to be processed, without complex electrode components. Therefore, the cost of the frame-shaped carrier 10 is low, and the replacement cost after damage or contamination by particles generated by plasma treatment can also be greatly reduced.
[0048] Fourth, the horizontal adjustment module 34 changes the vertical distance between the connecting plate 334 and the moving part 332, thereby correcting the levelness of the second electrode 32 to ensure the overall accuracy of the process equipment.
[0049] 5. The distance of the second electrode 32 to the first electrode 31 is limited by the distance adjustment module 35, so as to accommodate different sizes of frame carrier 10 or different sizes of workpiece 1.
[0050] 6. The workpiece 1 is fixed by the clamping device 36 in conjunction with the second electrode 32, which can clamp and fix the workpiece 1, thus avoiding the workpiece 1 from bending and warping due to heat and affecting the coating effect.
[0051] The embodiments described above are merely illustrative of the present invention and are not intended to limit the scope of the invention. All modifications or variations made without departing from the spirit of the present invention are within the scope of protection intended by the present invention.
Claims
1. A continuous plasma process system with a rising electrode, characterized in that, include: A frame-shaped carrier tray is used to hold a workpiece to be processed; A loading cavity is used to input the workpiece to be processed; A processing cavity is connected to a loading cavity. The processing cavity receives the workpiece and performs plasma treatment on the workpiece. The processing cavity has a first electrode, a second electrode, and a displacement device. The first electrode and the second electrode are disposed opposite to each other at both ends of the processing cavity to form a processing space. The displacement device is connected to the second electrode. When the frame-shaped carrier moves to the processing space, the displacement device can control the second electrode to be in a de-energized position or a conductive position. When the second electrode is away from the first electrode and does not contact the workpiece, the second electrode is in the de-energized position. When the second electrode moves towards the first electrode and passes through the frame-shaped carrier, abuts against the workpiece, and detaches from the frame-shaped carrier, the second electrode is in the conductive position. as well as An output cavity is connected to the processing cavity, which receives and outputs the processed workpiece.
2. The continuous plasma process system with lifting electrodes as described in claim 1, characterized in that, The first electrode and the second electrode are disposed opposite each other in a vertical direction in the processing cavity, and the continuous plasma process system also has a transfer device for the frame-shaped carrier to be displaced in a horizontal direction in the processing cavity.
3. The continuous plasma process system with lifting electrodes as described in claim 1, characterized in that, The displacement device has a driving member and a moving member. The moving member is displaced by the driving member and drives the second electrode to displace.
4. The continuous plasma process system with lifting electrodes as described in claim 3, characterized in that, The processing cavity has a platform, and the displacement device also has a connecting plate. One end of the driving member is connected to the platform, and the other end pushes against the connecting plate. One end of the moving member is connected to the connecting plate, and the other end passes through the platform and contacts the second electrode. The connecting plate is displaced by the action of the driving member, which in turn causes the moving member and the second electrode to be displaced.
5. The continuous plasma process system with lifting electrodes as described in claim 4, characterized in that, A horizontal adjustment module is provided between the driving component and the moving component. One end of the moving component is connected to the horizontal adjustment module, and the other end is in contact with the second electrode. The horizontal adjustment module can change the vertical distance between the connecting plate and the moving component, thereby adjusting the levelness of the second electrode.
6. The continuous plasma process system with lifting electrodes as described in claim 5, characterized in that, The platform is provided with a limiting part, and the connecting plate is provided with a distance adjustment module corresponding to the limiting part. The limiting part can abut against the distance adjustment module to limit the movement distance of the displacement device in the direction of the first electrode, and the distance adjustment module can adjust the size of the movement distance.
7. The continuous plasma process system with rising electrodes as described in claim 3, characterized in that, The displacement device has an elastic conductive element on one side connected to the second electrode that corresponds to the position of the frame-shaped carrier. When the second electrode is in the conductive position, the elastic conductive element contacts the frame-shaped carrier.
8. The continuous plasma process system with lifting electrodes as described in claim 1, characterized in that, When the second electrode is in the conductive position, there is a gap between the workpiece and the frame-shaped carrier.
9. The continuous plasma process system with a rising electrode as described in claim 8, characterized in that, The interval is 1 mm to 3 mm.
10. The continuous plasma process system with lifting electrodes as described in claim 1, characterized in that, The processing cavity also has a clamping device, which is fixed in the processing space to fix the workpiece to be processed.
11. The continuous plasma process system with lifting electrodes as described in claim 10, characterized in that, When the second electrode is in the conductive position, the second electrode and the clamping device are clamped and fixed to the workpiece from both sides.
Citation Information
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