Method and device for testing transient pulse response characteristics of thyristor reverse recovery period

Abstract

The present invention relates to a method and device for testing transient pulse response characteristics of a thyristor during reverse recovery, wherein the method comprises: step S1: applying a half-sine wave signal to both ends of a thyristor to be tested to keep the thyristor in a conducting state; step S2: measuring the current of the thyristor, and judging the working state of the thyristor based on the measured current of the thyristor; step S3: when the thyristor is in the reverse recovery period, applying a test pulse to both ends of the thyristor, and measuring the current and voltage at both ends of the thyristor, and calculating its impedance; step S4: changing the amplitude of the test pulse, and repeating the above steps to obtain the impedance of the thyristor under test pulses of different voltages, and drawing an impedance-voltage curve; step S5: extracting impedance characteristics based on the drawn impedance-voltage curve, and judging the health state of the thyristor based on the extracted impedance characteristics. Compared with the prior art, the present invention improves the detection accuracy.

Description

Technical Field

[0001] The invention relates to the field of thyristor testing, and in particular to a method and a device for testing transient pulse response characteristics of a thyristor during a reverse recovery period. Background Art

[0002] In the field of high-voltage direct current transmission and thyristor degradation degree detection, the health status of the converter valve thyristor is one of the main concerns. Although some existing technologies provide the detection of the health status of thyristors, for example, Chinese patent CN212301719U discloses a TE board and thyristor simulation detection device, including a VBE signal generator, a power supply, and a reactor; the two poles of the power supply are connected to the thyristor to be detected to provide an AC power supply; the VBE signal generator is connected to the TE board to be detected through an optical fiber. However, it can only detect problems when the thyristor problem is more serious.

[0003] However, in the field of high-voltage direct current transmission, extremely high requirements are placed on the health status of thyristors. Providing a detection method that can detect abnormalities in thyristors at an early stage is an issue that needs to be urgently addressed.

[0004] In this regard, some technicians have proposed that the transient pulse response characteristics during the reverse recovery period can be used as an important basis for the health status. However, such existing technologies are mainly based on the voltage tolerance characteristics of the thyristor during the reverse recovery period, and do not provide sufficient constraints, resulting in the measured data being difficult to accurately reflect the health status of the thyristor. Summary of the invention

[0005] The purpose of the present invention is to provide a method and device for testing the transient pulse response characteristics of a thyristor during the reverse recovery period. By measuring the response of a test thyristor under pulse voltages of different voltage levels when the test thyristor is in the reverse recovery period, and extracting impedance characteristics based on the measured response, and comparing them with standard reference values, the health status of the test thyristor can be determined. The accuracy of fault detection of the test thyristor can be improved, and thyristors with slight defects can be found, thereby improving detection accuracy.

[0006] The purpose of the present invention can be achieved by the following technical solutions:

[0007] A method for testing transient pulse response characteristics of a thyristor during a reverse recovery period, comprising:

[0008] Step S1: applying a half-sine wave signal to both ends of the thyristor to be tested to keep the thyristor in the on state;

[0009] Step S2: measuring the current of the test thyristor, and judging the working state of the test thyristor based on the measured current of the test thyristor;

[0010] Step S3: When the test thyristor is in the reverse recovery period, a test pulse is applied to both ends of the test thyristor, and the current and the voltage across the test thyristor are measured to calculate its impedance;

[0011] Step S4: changing the amplitude of the test pulse, and repeating steps S1 to S3, obtaining the impedance of the test thyristor under the test pulses of different voltages, and drawing an impedance-voltage curve;

[0012] Step S5: extracting impedance characteristics based on the drawn impedance-voltage curve, and judging the health status of the test thyristor based on the extracted impedance characteristics.

[0013] The condition for judging whether the test thyristor is in the reverse recovery period is: when the current flowing through the thyristor reverses.

[0014] The impedance characteristics include impedance modulus difference and phase difference,

[0015] The step S5 specifically includes:

[0016] Step S51: Based on the drawn impedance-voltage curve, compare it with the reference impedance-voltage curve of the same type of thyristor, and calculate the difference between the impedance modulus and phase of the test thyristor with respect to the reference value for test pulses of different voltages;

[0017] Step S52: judging the health status of the test thyristor based on the obtained difference between the impedance modulus and the phase of the test thyristor with respect to the reference value.

[0018] The step S52 specifically includes:

[0019] Step S521: Based on the obtained differences of the impedance modulus and phase of the test thyristor with respect to the reference value, the impedance modulus change percentage and phase change percentage corresponding to each test pulse voltage are calculated respectively:

[0020] PZ i =(Z m,i -Z m0,i )

[0021] Q i =(Q m,i -Q m0,i )

[0022] Where: Q i is the phase change percentage corresponding to the pulse voltage i, Q m,i is the phase of the test thyristor corresponding to the pulse voltage i, Q m0,i is the phase reference value corresponding to the pulse voltage i;

[0023] Step S522: Determine whether the impedance modulus change percentage corresponding to each test pulse voltage is less than the first set threshold, and whether the phase change percentage corresponding to each test pulse voltage is less than the second set threshold. If so, the health status of the output test thyristor is normal. Otherwise, the health status of the output test thyristor is abnormal.

[0024] A device for implementing the above-mentioned testing method comprises:

[0025] The industrial frequency power supply module is connected to the test thyristor to generate a half-sine wave;

[0026] Impact power supply module, connected to the test thyristor, used to generate test pulses;

[0027] The single chip microcomputer delay system is connected to the impact power module and is used to control the impact power module;

[0028] High-pass filter, located between the impulse power module and the test thyristor;

[0029] A voltage detection probe and a current detector, wherein the input end of the voltage detection probe is respectively located at the two ends of the test thyristor, and the output end is connected to the single-chip microcomputer delay system, and the current detector is connected in series with the test thyristor.

[0030] The industrial frequency power supply module includes a first charging resistor, a first energy storage capacitor, a discharge inductor, an auxiliary thyristor and a freewheeling diode. One end of the first charging resistor is connected to the positive electrode of the first high-voltage DC power supply, and the other end is respectively connected to one end of the first energy storage capacitor and one end of the discharge inductor. The other end of the discharge inductor is respectively connected to the positive electrode of the auxiliary thyristor and the negative electrode of the freewheeling diode. The negative electrode of the auxiliary thyristor and the positive electrode of the freewheeling diode are both connected to the positive electrode of the test thyristor. The first energy storage capacitor is respectively connected to the negative electrode of the first high-voltage DC power supply and the negative electrode of the test thyristor.

[0031] The impact power supply module includes a second charging resistor, a second energy storage capacitor, a third energy storage capacitor, a wave head resistor and an IGBT array. One end of the second charging resistor is connected to the positive electrode of the second high-voltage DC power supply, and the other end is respectively connected to one end of the second energy storage capacitor and the positive electrode of the IGBT array. The negative electrode of the IGBT array is connected to one end of the wave head resistor, and the control signal input end is connected to the single-chip delay system. The other end of the wave head resistor is connected to one end of the third energy storage capacitor and is connected to the positive electrode of the test thyristor through a high-pass filter. The other end of the second energy storage capacitor and the other end of the third energy storage capacitor are both connected to the negative electrode of the second high-voltage DC power supply and are connected to the negative electrode of the test thyristor through a high-pass filter. The IGBT array is turned on or off under the control of the single-chip delay system.

[0032] The high-pass filter includes a filter capacitor and a filter resistor, one end of the filter capacitor is respectively connected to the wave head resistor and one end of the third energy storage capacitor, and the other end is respectively connected to one end of the filter resistor and the positive electrode of the test thyristor, and the other end of the filter resistor is respectively connected to the negative electrode of the second high-voltage DC power supply and the negative electrode of the test thyristor.

[0033] There are a plurality of third energy storage capacitors, and all the third energy storage capacitors are arranged in parallel. The impact power supply module also includes a selection switch, and one of the third energy storage capacitors is selectively connected through the selection switch.

[0034] The wave head resistor is an adjustable resistor.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] 1. By measuring the response of the test thyristor under pulse voltages of different voltage levels when it is in the reverse recovery period, and extracting the impedance characteristics based on the measured response, and comparing it with the standard reference value to determine the health status of the test thyristor, the accuracy of test thyristor fault detection can be improved, and thyristors with slight defects can be found, thereby improving detection accuracy.

[0037] 2. Impedance characteristics include impedance modulus difference and phase difference, and the detection accuracy of health status is higher.

[0038] 3. By adjusting the voltage of the DC voltage source of the impulse power supply module for discharge, the obtained high-voltage pulse signal can be passed through a high-pass filter to obtain impulse test voltage signals of different amplitudes. At the same time, the delay size of the microcontroller delay system can be controlled to ensure that the impulse voltage can accurately act on the reverse recovery period of the thyristor, thereby improving the success rate of the test link and obtaining more accurate response data of the reverse recovery period.

[0039] 4. An adjustable resistor is used as the wave head resistor, and a plurality of third energy storage capacitors that can be selectively connected are combined to realize the reverse recovery characteristic test of the thyristor under different voltage steps, so as to further judge its health status. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a schematic flow chart of the main steps of the method of the present invention;

[0041] Figure 2 This is a schematic diagram of the circuit principle of the test device in Example 1 of the present invention;

[0042] Figure 3 This is a schematic diagram of the circuit principle of the testing device in Example 2 of the present invention;

[0043] Among them: 1. Industrial frequency power supply module, 2. Impact power supply module. DETAILED DESCRIPTION

[0044] The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiments.

[0045] Example 1

[0046] A method for testing transient pulse response characteristics of a thyristor during reverse recovery period, such as Figure 1 As shown, including:

[0047] Step S1: applying a half-sine wave signal to both ends of the thyristor to be tested to keep the thyristor in the on state;

[0048] Step S2: measuring the current of the test thyristor, and judging the working state of the test thyristor based on the measured current of the test thyristor;

[0049] The purpose of judging the working state is mainly to judge whether it is in the reverse recovery period. Specifically, the condition for judging whether the test thyristor is in the reverse recovery period is: when the current flowing through the thyristor is reversed.

[0050] Step S3: When the test thyristor is in the reverse recovery period, a test pulse is applied to both ends of the test thyristor, and the current and the voltage across the test thyristor are measured to calculate its impedance;

[0051] Step S4: changing the amplitude of the test pulse, and repeating steps S1 to S3, obtaining the impedance of the test thyristor under the test pulses of different voltages, and drawing an impedance-voltage curve;

[0052] Step S5: Based on the drawn impedance-voltage curve, the impedance feature is extracted, and the health state of the test thyristor is judged based on the extracted impedance feature. In this implementation, and in most embodiments, the impedance feature includes the impedance modulus difference and the phase difference, and the detection accuracy of the health state is higher. This step specifically includes:

[0053] Step S51: Based on the drawn impedance-voltage curve, compare it with the reference impedance-voltage curve of the same type of thyristor, and calculate the difference between the impedance modulus and phase of the test thyristor with respect to the reference value for test pulses of different voltages;

[0054] Step S52: judging the health status of the test thyristor based on the difference between the impedance modulus and the phase of the test thyristor and the reference value, specifically including:

[0055] Step S521: Based on the obtained differences of the impedance modulus and phase of the test thyristor with respect to the reference value, the impedance modulus change percentage and phase change percentage corresponding to each test pulse voltage are calculated respectively:

[0056] PZ i =(Z m,i -Z m0,i )

[0057] Q i =(Q m,i -Q m0,i )

[0058] Where: Q i is the phase change percentage corresponding to the pulse voltage i, Q m,i is the phase of the test thyristor corresponding to the pulse voltage i, Q m0,i is the phase reference value corresponding to the pulse voltage i;

[0059] Step S522: Determine whether the impedance modulus change percentage corresponding to each test pulse voltage is less than the first set threshold, and whether the phase change percentage corresponding to each test pulse voltage is less than the second set threshold. If so, the health status of the output test thyristor is normal. Otherwise, the health status of the output test thyristor is abnormal.

[0060] By measuring the response of the test thyristor under pulse voltages of different voltage levels when it is in the reverse recovery period, extracting the impedance characteristics based on the measured response, and comparing it with the standard reference value to determine the health status of the test thyristor, the accuracy of test thyristor fault detection can be improved, and thyristors with slight defects can be found, thereby improving detection accuracy.

[0061] A device for implementing the above-mentioned testing method, such as Figure 2 As shown, including:

[0062] The industrial frequency power supply module 1 is connected to the thyristor DUT to generate a half-sine wave;

[0063] The impulse power supply module 2 is connected to the thyristor DUT and is used to generate the test pulse;

[0064] The single chip delay system is connected to the impact power module 2 and is used to control the impact power module 2;

[0065] A high-pass filter is provided between the impulse power module 2 and the test thyristor DUT;

[0066] There are two voltage detection probes, N1 and N2, respectively. The input ends of the two voltage detection probes are located at both ends of the test thyristor DUT, and the output ends are connected to the microcontroller delay system. The current detector S is connected in series with the test thyristor.

[0067] The industrial frequency power supply module 1 includes a first charging resistor R1, a first energy storage capacitor C1, a discharge inductor L, an auxiliary thyristor VT and a freewheeling diode D. One end of the first charging resistor R1 is connected to the positive electrode of the first high-voltage DC power supply DC1, and the other end is respectively connected to one end of the first energy storage capacitor C1 and one end of the discharge inductor L. The other end of the discharge inductor L is respectively connected to the positive electrode of the auxiliary thyristor VT and the negative electrode of the freewheeling diode D. The negative electrode of the auxiliary thyristor VT and the positive electrode of the freewheeling diode D are both connected to the positive electrode of the test thyristor DUT. The first energy storage capacitor C1 is respectively connected to the negative electrode of the first high-voltage DC power supply DC1 and the negative electrode of the test thyristor DUT.

[0068] The components of the industrial frequency power supply module 1 are set to appropriate parameters, and a sinusoidal half-wave with appropriate amplitude and pulse width is output, so that the test thyristor DUT can be turned on stably.

[0069] In the industrial frequency power supply module, the DC high voltage source DC1 can output a voltage of 0 to 500V. The charging resistor R1 has a resistance of 1kΩ and a power of 1000W. It is a high voltage glass glaze film resistor that limits the charging current. The energy storage capacitor C1 is 400μF and can withstand a voltage of 1200V. It forms an RLC oscillation circuit with the inductor and resistor to generate a sinusoidal current.

[0070] The impact power supply module 2 includes a second charging resistor R2, a second energy storage capacitor C2, a third energy storage capacitor C3, a wave head resistor R3 and an IGBT array. One end of the second charging resistor R2 is connected to the positive electrode of the second high-voltage DC power supply DC2, and the other end is respectively connected to one end of the second energy storage capacitor C2 and the positive electrode of the IGBT array. The negative electrode of the IGBT array is connected to one end of the wave head resistor R3, and the control signal input end is connected to the single-chip microcomputer delay system. The other end of the wave head resistor R3 is connected to one end of the third energy storage capacitor C3, and is connected to the positive electrode of the test thyristor DUT through a high-pass filter. The other end of the second energy storage capacitor C2 and the other end of the third energy storage capacitor C3 are both connected to the negative electrode of the second high-voltage DC power supply DC2, and are connected to the negative electrode of the test thyristor DUT through a high-pass filter. The IGBT array is turned on or off under the control of the single-chip microcomputer delay system.

[0071] The pulse test waveform is realized through the C-LRC discharge circuit. The second energy storage capacitor C2 discharges the third energy storage capacitor C3 through the wave head resistor R3. The voltage on the third energy storage capacitor C3 can be approximately regarded as a bevel wave, which is used as the recovery period pulse test waveform of the test thyristor DUT. Combined with the parameters of the test thyristor DUT, the voltage pulse waveform of this experiment requires: the maximum value of the pulse voltage amplitude is not less than 2000V, the effect of the pulse voltage rise rate on the recovery period of the test thyristor DUT, and the maximum value of the pulse voltage rise slope is not less than 400V / μs. The capacitor C2=10μF, the initial voltage is 2000V, C3=1μF, R3=15Ω can be selected, and the second energy storage capacitor C2 is kept unchanged in the experiment. The test pulse wave head time can be adjusted by changing the parameters of the third energy storage capacitor C3 and the wave head resistor R3; the circuit parameters are kept unchanged, and the test pulse voltage amplitude can be adjusted by changing the initial voltage of the second energy storage capacitor C2, ranging from 2000 to 4000V.

[0072] Specifically, in the impulse power supply module 2, the second DC high-voltage source DC2 can output a voltage of 0 to 5000V; the second energy storage capacitor C2 is selected to be 10μF, the initial power supply voltage is 2000V, the third energy storage capacitor C3 is configured to be 1μF, the wave head resistor R3 is 15Ω, and the second energy storage capacitor C2 is kept unchanged in the experiment. The test pulse wave head time can be adjusted by changing the third energy storage capacitor C3 and the third energy storage capacitor C3 parameters, wherein the third energy storage capacitor C3 is 1μF, 0.5μF and 0.1μF respectively, the wave head resistor R3 ranges from 0 to 30Ω, and the corresponding wave head time ranges from 0 to 100μs; keeping the circuit parameters unchanged, changing the initial voltage of C2 can adjust the test pulse voltage amplitude, ranging from 2000 to 4000V.

[0073] The MCU delay system can ensure the realization of the impulse voltage signal by changing the MCU delay adjustable test pulse application time. Specifically, the MCU delay system can ensure the realization of the impulse voltage signal application moment by changing the MCU delay adjustable test pulse application time. In summary, the hybrid integrated IGBT driver with its own isolated power supply is considered to provide primary / secondary electrical isolation for the IGBT through an optical coupler, with an effective isolation voltage of 3750V and a maximum switching frequency of 20kHz.

[0074] The high-pass filter includes a filter capacitor C4 and a filter resistor R4, one end of the filter capacitor C4 is respectively connected to the wave head resistor R4 and one end of the third energy storage capacitor C3, and the other end is respectively connected to one end of the filter resistor R4 and the positive electrode of the test thyristor DUT, and the other end of the filter resistor R4 is respectively connected to the negative electrode of the second high-voltage DC power supply DC2 and the negative electrode of the test thyristor DUT. Specifically, the main function of the high-pass filter is to prevent the discharge inductance L of the power frequency power supply module 1 from causing the impact pulse wave tail oscillation, and play a high-pass filtering role. In this embodiment, the filter capacitor C4 is 1μF and the filter resistor R4 is 50Ω, which can ensure that the wave tail time is greatly reduced without affecting the pulse wave head.

[0075] In this embodiment, the wave head resistor R3 is an adjustable resistor. Similarly, the third energy storage capacitor C3 can also be an adjustable capacitor. For example, the capacitance value can be adjusted by the distance between the plates.

[0076] Example 2

[0077] This embodiment is generally similar to Embodiment 1. In order to avoid blurring the purpose of the present invention, the similarities are not described again and only the differences are described.

[0078] Specifically, the difference between this embodiment and Embodiment 1 lies in the setting of the third energy storage capacitor C3. In this embodiment, the third energy storage capacitor C3 adopts a capacitor with a fixed capacitance, and a plurality of third energy storage capacitors C3 are provided, all of which are connected in parallel. The impact power supply module 2 also includes a selection switch S, and the third energy storage capacitor C3 is connected by selecting one of the switch S.

[0079] Compared with Example 1, in this embodiment, since a third energy storage capacitor C3 with a fixed capacitance is used, the performance is more stable and the cost is lower. By configuring multiple third energy storage capacitors C3 with different capacitances and using a selection switch S to control which third energy storage capacitor C3 is connected, the capacitance of the third energy storage capacitor C3 can also be adjusted.

[0080] In addition, whether in Example 1 or Example 2, if the above functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

Claims

1. A method for testing transient pulse response characteristics of a thyristor during reverse recovery period, characterized in that: include: Step S1: applying a half-sine wave signal to both ends of the thyristor to be tested to keep the thyristor in the on state; Step S2: measuring the current of the test thyristor, and judging the working state of the test thyristor based on the measured current of the test thyristor; Step S3: When the test thyristor is in the reverse recovery period, a test pulse is applied to both ends of the test thyristor, and the current and the voltage across the test thyristor are measured to calculate its impedance; Step S4: changing the amplitude of the test pulse, and repeating steps S1 to S3, obtaining the impedance of the test thyristor under the test pulses of different voltages, and drawing an impedance-voltage curve; Step S5: extracting impedance characteristics based on the drawn impedance-voltage curve, and judging the health status of the test thyristor based on the extracted impedance characteristics; The impedance characteristics include impedance modulus difference and phase difference, The step S5 specifically includes: Step S51: Based on the drawn impedance-voltage curve, compare it with the reference impedance-voltage curve of the same type of thyristor, and calculate the difference between the impedance modulus and phase of the test thyristor with respect to the reference value for test pulses of different voltages; Step S52: judging the health status of the test thyristor based on the obtained difference between the impedance modulus and the phase of the test thyristor with respect to the reference value.

2. The method for testing transient pulse response characteristics of a thyristor during reverse recovery period according to claim 1, characterized in that: The condition for judging whether the test thyristor is in the reverse recovery period is: when the current flowing through the thyristor reverses.

3. The method for testing transient pulse response characteristics of a thyristor reverse recovery period according to claim 1, characterized in that: The step S52 specifically includes: Step S521: Based on the obtained differences of the impedance modulus and phase of the test thyristor with respect to the reference value, the impedance modulus change percentage and phase change percentage corresponding to each test pulse voltage are calculated respectively: PZ i =（ Z m,i - Z m0,i ） Q i =（ Q m,i - Q m0,i ） in: Q i Corresponding to the pulse voltage i The percentage of phase change, Q m,i Corresponding pulse voltage i The phase of the test thyristor, Q m0,i Corresponding pulse voltage i The phase reference value of Step S522: Determine whether the impedance modulus change percentage corresponding to each test pulse voltage is less than the first set threshold, and whether the phase change percentage corresponding to each test pulse voltage is less than the second set threshold. If so, the health status of the output test thyristor is normal. Otherwise, the health status of the output test thyristor is abnormal.

4. A device for implementing the testing method as claimed in any one of claims 1 to 3, characterized in that: include: The industrial frequency power supply module is connected to the test thyristor to generate a half-sine wave; Impact power supply module, connected to the test thyristor, used to generate test pulses; The single chip microcomputer delay system is connected to the impact power module and is used to control the impact power module; High-pass filter, located between the impulse power module and the test thyristor; A voltage detection probe and a current detector, wherein the input end of the voltage detection probe is respectively located at the two ends of the test thyristor, and the output end is connected to the single-chip microcomputer delay system, and the current detector is connected in series with the test thyristor.

5. The device according to claim 4, characterized in that The industrial frequency power supply module includes a first charging resistor, a first energy storage capacitor, a discharge inductor, an auxiliary thyristor and a freewheeling diode. One end of the first charging resistor is connected to the positive electrode of the first high-voltage DC power supply, and the other end is respectively connected to one end of the first energy storage capacitor and one end of the discharge inductor. The other end of the discharge inductor is respectively connected to the positive electrode of the auxiliary thyristor and the negative electrode of the freewheeling diode. The negative electrode of the auxiliary thyristor and the positive electrode of the freewheeling diode are both connected to the positive electrode of the test thyristor. The first energy storage capacitor is respectively connected to the negative electrode of the first high-voltage DC power supply and the negative electrode of the test thyristor.

6. The device according to claim 4, characterized in that The impact power supply module includes a second charging resistor, a second energy storage capacitor, a third energy storage capacitor, a wave head resistor and an IGBT array. One end of the second charging resistor is connected to the positive electrode of the second high-voltage DC power supply, and the other end is respectively connected to one end of the second energy storage capacitor and the positive electrode of the IGBT array. The negative electrode of the IGBT array is connected to one end of the wave head resistor, and the control signal input end is connected to the single-chip delay system. The other end of the wave head resistor is connected to one end of the third energy storage capacitor and is connected to the positive electrode of the test thyristor through a high-pass filter. The other end of the second energy storage capacitor and the other end of the third energy storage capacitor are both connected to the negative electrode of the second high-voltage DC power supply and are connected to the negative electrode of the test thyristor through a high-pass filter. The IGBT array is turned on or off under the control of the single-chip delay system.

7. The device according to claim 6, characterized in that The high-pass filter includes a filter capacitor and a filter resistor, one end of the filter capacitor is respectively connected to the wave head resistor and one end of the third energy storage capacitor, and the other end is respectively connected to one end of the filter resistor and the positive electrode of the test thyristor, and the other end of the filter resistor is respectively connected to the negative electrode of the second high-voltage DC power supply and the negative electrode of the test thyristor.

8. The device according to claim 6, characterized in that There are a plurality of third energy storage capacitors, and all the third energy storage capacitors are arranged in parallel. The impact power supply module also includes a selection switch, and one of the third energy storage capacitors is selectively connected through the selection switch.

9. The device according to claim 6, characterized in that The wave head resistor is an adjustable resistor.

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