A method for preparing an LED packaging device and an LED packaging device

Abstract

The present invention discloses a method for preparing an LED package device and an LED package device. The method includes: providing a temporary carrier, forming a passivation layer on the temporary carrier; preparing a patterned mask on the passivation layer, and vapor-depositing a plurality of patterned metal layers on the passivation layer; setting chip mounting positions on the patterned metal layer, applying solder paste on the chip mounting positions to form soldering points, and fitting the chip pads to the corresponding soldering points; laminating a packaging colloid covering the LED chip on the patterned metal layer through a laminating process; carving circuits on the packaging colloid, cutting the packaging colloid along the circuits, and forming a plurality of LED package devices on the temporary carrier; covering the top surface of the LED package device with a layer of adhesive blue film; and etching the passivation layer to peel off the temporary carrier. By providing the patterned metal layer on the temporary carrier to achieve LED chip packaging, process steps are saved and efficiency is improved.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of chip packaging, and in particular to a preparation method of an LED packaging device and the LED packaging device. Background Art

[0002] Current LED packaging devices are mainly manufactured by soldering LED chips to substrates and then encapsulating the substrates with plastic encapsulation. A circuit layer needs to be preset on the substrate according to the specifications of the LED chips, and a metal layer is provided on the surface of the substrate so that the LED chips can be mounted on the substrate. However, this packaging method requires processing of circuits on the substrate, which makes the preparation process of LED packaging devices complicated and cumbersome, affecting the preparation efficiency of LED packaging devices. Summary of the Invention

[0003] The purpose of the present invention is to overcome the shortcomings of the prior art. The present invention provides a method for preparing an LED packaging device and an LED packaging device. The preparation method realizes the packaging of the LED chip by setting a patterned metal layer on a temporary carrier, saving process and improving preparation efficiency.

[0004] The present invention provides a method for preparing an LED package device, the method comprising:

[0005] Providing a temporary carrier, and forming a passivation layer on the top surface of the temporary carrier based on vapor deposition;

[0006] Forming a patterned mask on the passivation layer by photoresist preparation, and forming a plurality of patterned metal layers on the passivation layer by evaporation based on the patterned mask;

[0007] Set chip mounting positions on each patterned metal layer, apply solder paste to each chip mounting position to form soldering points, and fit the solder pads of several LED chips to the corresponding soldering points;

[0008] laminating the patterned metal layer to form a packaging colloid covering the plurality of LED chips through a laminating process;

[0009] Marking circuits on the packaging colloid, cutting the packaging colloid along the circuits by a cutting mechanism and forming a plurality of LED package devices on the temporary carrier;

[0010] Covering the top surfaces of the plurality of LED package devices with a layer of adhesive blue film;

[0011] The passivation layer is etched to peel off the temporary carrier from the plurality of LED package devices.

[0012] Furthermore, the step of forming a patterned mask on the passivation layer by using a photoresist, and forming a plurality of patterned metal layers by evaporation on the passivation layer based on the patterned mask comprises:

[0013] Spin-coating a photoresist on the passivation layer, and forming a patterned mask exposing a portion of the passivation layer on the photoresist by exposure and development;

[0014] Depositing a metal material on the patterned mask by an electron beam evaporation machine to form an initial metal layer covering the passivation layer and the photoresist;

[0015] The photoresist is removed, and a plurality of patterned metal layers are formed on the passivation layer.

[0016] Furthermore, the step of setting a chip mounting position on the patterned metal layer, applying solder paste to the chip mounting position to form a soldering point, and attaching the solder pad of the LED chip to the soldering point includes:

[0017] Marking chip mounting positions on the patterned metal layer, and applying solder paste on the chip mounting positions to form soldering points;

[0018] The solder pads of the LED chip are correspondingly attached to the soldering points, and the soldering points are cured by returning to the furnace at a high temperature.

[0019] Furthermore, the step of laminating the patterned metal layer to form a packaging colloid covering the LED chip by a laminating process includes:

[0020] Covering the patterned metal layer with an initial colloid so that the initial colloid covers the surface of the patterned metal layer and the LED chip;

[0021] The glue pressing machine is set to continuously hot-press the initial colloid for a first preset time at a preset pressing pressure and a preset baking temperature to form the encapsulated colloid.

[0022] Furthermore, the preset pressing pressure is P, and the value range of P is: 3t≤P≤5t;

[0023] The preset baking temperature is F, and the value range of F is: 110°C ≤ F ≤ 150°C;

[0024] The first preset time is T1, and the value range of T1 is: 3h≤T≤5h.

[0025] Furthermore, marking a circuit on the packaging colloid, cutting the packaging colloid along the circuit by a cutting mechanism, and forming a plurality of LED package devices on the temporary carrier board includes:

[0026] Carving a circuit on the top surface of the packaging colloid, cutting the packaging colloid along the circuit with a grinding wheel, and forming a plurality of line grooves on the packaging colloid based on the cutting;

[0027] The packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier.

[0028] Furthermore, the width of the grinding wheel is W, and the value range of W is: 40 μm≤W≤100 μm.

[0029] Furthermore, etching the passivation layer to peel the temporary carrier from the plurality of LED package devices comprises:

[0030] The passivation layer is completely immersed in the etching solution and the immersion is continued for a second preset time to etch and remove the passivation layer.

[0031] Furthermore, the second preset time is T2, and the value range of T2 is: 15min≤T2≤30min.

[0032] The present invention also provides an LED packaging device, which is prepared based on the preparation method;

[0033] The LED package device includes a patterned metal layer, an LED chip arranged on the patterned metal layer, and a packaging adhesive layer covering the LED chip;

[0034] The bottom surface of the patterned metal layer is flush with the bottom surface of the packaging adhesive layer.

[0035] The present invention provides a method for preparing an LED packaging device and an LED packaging device. The preparation method involves packaging LED chips on a temporary carrier and peeling off the temporary carrier after the packaging is completed. The temporary carrier can be recycled and reused. By setting a temporary carrier to carry the packaging operation of the LED chips, the process of the processing circuit on the temporary carrier can be reduced, thereby simplifying the process of the LED packaging device. In addition, by simultaneously packaging multiple LED packaging devices on the temporary carrier, the preparation efficiency of the LED packaging device is improved.

[0036] The LED packaging device prepared based on the preparation method reduces the substrate structure and simplifies the overall structure of the LED device, so that the LED packaging device can adapt to the installation requirements of miniaturized devices. At the same time, combined with the patterned metal layer, the LED packaging device is easy to fit onto the external circuit board, thereby improving the practicality and reliability of the LED packaging device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 is a flow chart of a method for preparing an LED packaging device according to an embodiment of the present invention;

[0039] Figure 2 Schematic diagram of the preparation state of a temporary carrier in an embodiment of the present invention;

[0040] Figure 3 Schematic diagram of the patterned metal preparation state in an embodiment of the present invention;

[0041] Figure 4 This is a schematic diagram of the soldering point preparation state in an embodiment of the present invention;

[0042] Figure 5 This is a schematic diagram of the LED chip bonding state in an embodiment of the present invention;

[0043] Figure 6 This is a schematic diagram of the preparation state of the encapsulated colloid in an embodiment of the present invention;

[0044] Figure 7 Schematic diagram of the encapsulated colloid segmentation state in an embodiment of the present invention;

[0045] Figure 8 Schematic diagram of the adhesive blue film lamination state in an embodiment of the present invention;

[0046] Figure 9 This is a schematic diagram of the preparation state of an LED packaging device according to an embodiment of the present invention;

[0047] Figure 10 Schematic diagram of the structure of the LED packaging device in an embodiment of the present invention. DETAILED DESCRIPTION

[0048] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0049] Example 1:

[0050] The present invention provides a method for preparing an LED package device. Figures 1 to 9, the preparation method comprises:

[0051] S11: providing a temporary carrier 1, and forming a passivation layer 2 on the top surface of the temporary carrier 1 based on vapor deposition.

[0052] Specifically, the material of the temporary carrier 1 can be a sapphire substrate, and the temporary carrier 1 can also be a silicon substrate. The temporary carrier 1 is used to carry components such as the metal layer, LED chip 4 and packaging colloid 5 to facilitate the molding and preparation of LED packaging devices.

[0053] Specifically, a silicon dioxide layer, namely the passivation layer 2, can be formed on the temporary carrier 1 by physical vapor deposition. The passivation layer 2 can meet the packaging processing requirements of the LED packaging device, and by preparing the passivation layer 2 made of silicon dioxide, the passivation layer 2 can be ablated and removed by immersion etching to facilitate the subsequent removal of the temporary carrier 1.

[0054] Furthermore, when the temporary carrier 1 is a silicon substrate, the passivation layer 2 can be prepared by DC reactive magnetron sputtering. A pulse generator is arranged between the DC power supply and the coating system. The output power of the DC power supply is controlled by the pulse generator, and the operating frequency of the DC reactive magnetron sputtering is adjusted. A silicon dioxide film material with good uniformity can be formed on the temporary carrier 1 by magnetron sputtering.

[0055] Furthermore, the passivation layer 2 can also be prepared by plasma-enhanced chemical vapor deposition, that is, using gas glow discharge to ionize the rarefied gas under a high-frequency electric field to produce ions, and the ions can move along the direction of the electric field under the action of the electric field, and finally the ions are deposited on the temporary carrier 1, and a silicon dioxide layer, namely the passivation layer 2, is deposited at the position of the temporary carrier 1.

[0056] Furthermore, by controlling the deposition time of the silicon dioxide layer, the deposition thickness of the passivation layer 2 is made between 1 and 4 μm, so that the silicon dioxide layer meets the requirements of chip carrying and packaging, and the time required for depositing the silicon dioxide layer is reduced, thereby improving the efficiency of silicon dioxide layer preparation.

[0057] Furthermore, a passivation layer 2 formed of silicon dioxide is prepared on the temporary carrier 1 so that the passivation layer 2 can be quickly etched and ablated by a chemical solution in a subsequent process, thereby simplifying the etching and ablation process of the passivation layer 2 and improving the convenience of stripping the temporary carrier 1.

[0058] S12: forming a patterned mask on the passivation layer 2 by photoresist preparation, and forming a plurality of patterned metal layers 3 on the passivation layer 2 by vapor deposition based on the patterned mask.

[0059] Specifically, a photoresist is spin-coated on the passivation layer 2 , and a patterned mask exposing a portion of the passivation layer 2 is formed on the photoresist through exposure and development.

[0060] Coating a photoresist on the surface of the passivation layer 2 by spin coating, and covering the surface of the photoresist with a patterned baffle, wherein the patterned baffle is provided with an opening, and the patterned baffle can block part of the photoresist and expose part of the photoresist;

[0061] By arranging a parallel light source to irradiate the photoresist, the exposed photoresist can be fully exposed to the light, thereby completing the exposure operation.

[0062] Specifically, after the patterned baffle is removed, the photoresist is immersed in a developer so that the photoresist after exposure treatment can fully contact the developer and react with the developer. After exposure treatment, the reaction rate of the developer and the photoresist can be increased, thereby achieving the effect of rapid ablation of the exposed part of the photoresist.

[0063] Furthermore, the photoresist is patterned so that a patterned mask is formed on the passivation layer 2 , so that a metal layer is formed by evaporation on the passivation layer 2 exposed by the patterned mask.

[0064] Specifically, a metal material is evaporated on the patterned mask by an electron beam evaporation machine to form an initial metal layer covering the passivation layer 2 and the photoresist, that is, the metal material is deposited on the patterned mask to form an initial metal layer, and the initial metal layer adaptively adheres to the patterned mask and the surface of the passivation layer 2 exposed based on the patterned mask.

[0065] Furthermore, the patterned metal layer 3 is deposited on the passivation layer 2 by an electron beam evaporation machine. By adjusting the evaporation rate, working distance and working time of the electron beam evaporation machine, the thickness of the patterned metal layer 3 is between 2μm and 3μm, so that the patterned metal layer 3 can meet the requirements of the surface-mount packaging of the LED chip 4.

[0066] Specifically, the metal material of the electron beam evaporation machine is a composite metal material, which includes metal materials such as platinum Pt, copper Cu, and chromium Cr. The platinum Pt, copper Cu, and chromium Cr are mixed in a ratio of 1:6:3 to form a patterned metal layer 3 formed of the composite metal material on the passivation layer 2. By doping chromium material into the copper material, the adhesion ability of the composite metal material to the passivation layer 2 can be improved, so that the patterned metal layer 3 is formed on the surface of the passivation layer 2.

[0067] Furthermore, copper metal has good electrical conductivity, chromium metal has good adhesion to silicon dioxide, and platinum metal can improve the deposition bonding performance between copper and chromium. By doping multiple metals to form a composite metal material, the patterned metal layer 3 can be deposited on the passivation layer 2, and it is ensured that the patterned metal layer 3 has good stability and conductivity, which can meet the packaging requirements of the LED chip 4.

[0068] Specifically, the patterned mask is removed to form the patterned metal layer 3 on the passivation layer 2 , and the patterned mask with the initialization metal layer is immersed in a chemical solution to dissolve and eliminate the patterned mask based on the chemical solution.

[0069] Furthermore, after the patterned mask is removed, a plurality of patterned metal layers 3 remain on the passivation layer 2 , and any group of two adjacent patterned metal layers 3 are used to mount and carry the LED chip 4 .

[0070] Furthermore, by controlling the evaporation rate and evaporation time of the electron beam evaporation equipment, several patterned metal layers 3 with uniform thickness can be formed on the passivation layer 2, thereby improving the consistency of the multiple patterned metal layers 3, thereby improving the preparation yield of the LED packaging device, and at the same time facilitating the synchronous tinning operation of several patterned metal layers 3, so as to improve the preparation efficiency of the LED packaging device.

[0071] S13: setting a chip mounting position on each patterned metal layer 3, applying solder paste to each chip mounting position to form a soldering point 7, and attaching the solder pads of several LED chips to the corresponding soldering points 7;

[0072] Specifically, according to the design of the LED packaging device and combined with the specifications and dimensions of the LED chip 4, the installation position of the LED chip 4 is marked on several of the patterned metal layers 3 through laser projection technology, the layout image of the LED packaging device is input into the laser projection equipment, and the installation position of the LED chip 4 is projected on several of the patterned metal layers 3 through laser projection technology.

[0073] Furthermore, by adjusting the laser power emitted by the laser projection device, the laser projection device can imprint the installation position of the LED chip 4 on several of the patterned metal layers 3, so that the several patterned metal layers 3 on the passivation layer 2 can display the installation position of the LED chip 4, so as to realize the pasting installation of the LED chip 4.

[0074] Specifically, the chip mounting position is marked on the patterned metal layer 3, solder paste is applied on the chip mounting position, the solder pads of the LED chip 4 are correspondingly attached to the solder paste, and the solder paste is cured by high-temperature re-furnace.

[0075] Furthermore, the distance between any two patterned metal layers 3 is greater than 100 μm to prevent the solder pastes of the soldering points 7 on two adjacent patterned metal layers 3 from contacting each other and causing leakage.

[0076] The working parameters of the dispensing equipment are set, including the dispensing rate, the extrusion amount of each dispensing, and other parameters. The solder paste is applied to several chip mounting positions corresponding to the patterned metal layer 3 through the dispensing equipment, and the solder pads of the LED chip 4 are correspondingly attached to the chip mounting positions of the patterned metal layer 3. The solder paste on the solder pads of the LED chip 4 is solidified through high-temperature re-furnace, thereby achieving soldering fixation of the LED chip 4.

[0077] By using a dispensing device to sequentially perform dispensing operations on the chip mounting positions of several patterned metal layers 3, the dispensing positions of the dispensing device can be precisely controlled to complete all dispensing operations on the several patterned metal layers 3, thereby improving the efficiency of LED chip installation.

[0078] Furthermore, in this embodiment, the solder paste brushing operation can also be performed on the chip mounting position by brushing tin on a steel mesh, that is, by placing a steel mesh with corresponding openings on the patterned metal layer 3, the chip mounting position is exposed to the outside through the steel mesh, and solder paste is applied on the steel mesh, thereby completing the solder paste brushing operation on the chip mounting position of the patterned metal layer 3, that is, filling the chip mounting position corresponding to the patterned metal layer 3 with solder paste, so as to perform the operation of mounting the LED chip 4 on the chip.

[0079] Furthermore, by brushing tin on the steel mesh, the operation of applying solder paste can be completed quickly, thereby forming soldering points 7 on several chip mounting positions of the patterned metal layer 3, and a plurality of LED chips 4 are correspondingly attached to the soldering points 7. The plurality of LED chips 4 can be subjected to high-temperature reflow soldering operations at the same time, thereby improving the installation efficiency of the LED chips 4.

[0080] Furthermore, a single metal layer is divided into several patterned metal layers 3 so that a silk screen can be covered on the surface of the patterned metal layer 3, thereby realizing the synchronous tinning operation of multiple patterned metal layers 3, which can improve the tinning efficiency of the patterned metal layer 3, and cooperate with the LED chip transfer carrier to realize the batch transfer tin soldering operation of the LED chips, thereby improving the processing efficiency of the LED chip soldering.

[0081] Furthermore, the screen tinning operation can improve the consistency of the solder paste on the patterned metal layers 3, thereby improving the reliability of the LED chip soldering operation.

[0082] S14: forming a packaging colloid 5 covering the LED chip 4 by laminating the patterned metal layer 3 through a laminating process.

[0083] Specifically, covering the patterned metal layer 3 with the initial colloid so that the initial colloid covers the surface of the patterned metal layer 3 and the LED chip 4 includes:

[0084] A temporary dam is set up to form a frame structure above the patterned metal layer 3. By pouring plastic encapsulation glue into the frame structure formed by the dam, the frame structure is used to limit the flow of the plastic encapsulation glue. By adjusting the environmental parameters of the plastic encapsulation glue, the plastic encapsulation glue is initially formed. The temporary dam is removed to form an initial colloid on the patterned metal layer 3.

[0085] Furthermore, the plastic encapsulation glue is poured into the frame structure formed by the temporary enclosure, and the plastic encapsulation glue is left to stand for 10 minutes, keeping the environment of the plastic encapsulation glue in a dry environment, and keeping the external environment between 80°C and 100°C. The plastic encapsulation glue is initially solidified and formed by standing still.

[0086] Specifically, the plastic encapsulation glue is pressed and shaped by a hot pressing device, the size and dimensions of the pressing mold of the hot pressing device are adjusted, the temporary carrier 1 is fixed on the processing station of the hot pressing device, and the initial colloid formed by the plastic encapsulation glue is contained in the pressing mold. By adjusting the working parameters of the hot pressing device, the hot pressing device can perform pressing and shaping in the plastic encapsulation glue.

[0087] Furthermore, the glue press is set to continuously hot-press the initial glue for a first preset time at a preset pressing pressure and a preset baking temperature to form the encapsulated glue 5 .

[0088] The preset pressing pressure is P, and the value range of P is: 3t≤P≤5t;

[0089] The preset baking temperature is F, and the value range of F is: 110°C ≤ F ≤ 150°C;

[0090] The first preset time is T1, and the value range of T1 is: 3h≤T≤5h.

[0091] In this embodiment, the preset pressing pressure P is set to 5t, the preset baking temperature F is set to 120°C, and the first preset time T1 is set to 4.5h, so that the initial colloid can be cured and formed to form the packaging colloid 5, and the packaging colloid 5 has good bonding with the passivation layer 2 and the patterned metal layer 3, thereby improving the packaging effect of the LED chip 4.

[0092] Furthermore, the pressing mold can limit the shape change of the initial colloid, so that the initial colloid is completely contained in the pressing mold, and based on the pressing action of the hot pressing equipment, the initial colloid can completely fit inside the pressing mold, thereby enabling rapid shaping.

[0093] Furthermore, according to the packaging and luminescence requirements of the LED chip 4, by preparing a suitable packaging colloid and simultaneously plastic-sealing several LED chips 4, it is possible to ensure that the light output consistency of the prepared multiple LED packaged devices is high, that is, the luminescence consistency of the LED packaged devices prepared in the same batch is good, thereby improving the preparation yield of the LED packaged devices.

[0094] S15 : marking circuits on the packaging colloid 5 , cutting the packaging colloid 5 along the circuits by a cutting mechanism, and forming a plurality of LED packaged devices on the temporary carrier 1 .

[0095] Specifically, a circuit is engraved on the top surface of the encapsulation colloid 5, and the encapsulation colloid 5 is cut along the circuit by a grinding wheel. A plurality of line grooves are formed on the encapsulation colloid 5 based on the cutting. The width of the grinding wheel is W, and the value range of W is: 40μm≤W≤100μm, that is, a plurality of line grooves with a width of 40μm to 100μm can be cut on the encapsulation colloid by grinding wheel cutting. According to the spacing setting between the metal layers in the patterned metal layer 3 and the convenience requirements of actual processing, a suitable grinding wheel is selected to meet the encapsulation cutting requirements of the LED packaging device.

[0096] Furthermore, based on the grinding wheel cutting, the packaging colloid 5 can be divided into several packaging layers, and each packaging layer corresponds to an LED packaging device, that is, several LED packaging devices are formed on the temporary carrier 1, and any of the LED packaging devices includes at least two patterned metal layers 3 and an LED chip 4. By covering the packaging colloid 5 on several patterned metal layers 3, the plastic sealing operation of multiple LED packaging devices can be met at the same time. Based on the grinding wheel cutting, multiple LED packaging devices can be conveniently divided, thereby improving the preparation efficiency of the LED packaging devices.

[0097] Specifically, in this embodiment, the packaging colloid 5 can be engraved with circuits by using a laser marking device, that is, by adjusting the laser beam power and controlling the laser routing on the packaging colloid 5 , circuits can be engraved on the surface of the packaging colloid 5 .

[0098] Furthermore, a circuit layout image can be input into the laser marking device, and the laser marking device can be controlled to project the input circuit layout image onto the packaging colloid 5. By adjusting the output power of the laser marking device, the laser marking device can complete the engraving and marking of the circuit layout on the packaging colloid 5.

[0099] Furthermore, the grinding wheel cutting machine is controlled to position itself corresponding to the carved lines on the encapsulation colloid 5 , the initial position of the grinding wheel cutting is determined, the moving path of the grinding wheel is adjusted, and the encapsulation colloid 5 is cut along the carved lines on the encapsulation colloid 5 .

[0100] Furthermore, the cutting depth of the grinding wheel is adjusted so that the bottom end of the grinding wheel can contact the passivation layer 2, so that the grooves formed by the grinding wheel can expose the passivation layer 2. The vertical cutting depth of the grinding wheel is set according to the thickness of the encapsulating gel 5 and the cutting speed of the grinding wheel so that the grinding wheel can contact the passivation layer 2, thereby forming cutting marks on the surface of the passivation layer 2.

[0101] Furthermore, the cutting marks can ensure that the grinding wheel cutting can completely separate the encapsulation colloid 5 into a plurality of encapsulation layers, thereby improving the convenience of detecting the grinding wheel cutting effect.

[0102] S16: Covering the top surfaces of the plurality of LED package components with a layer of adhesive blue film 6;

[0103] Specifically, a sticky blue film 6 is covered on the top surface of the packaging colloid 5 to temporarily fix the multiple LED packaging devices formed by cutting and dividing. By covering the sticky side of the sticky blue film 6 on the top surfaces of several LED packaging devices, after the temporary carrier 1 is peeled off, the multiple LED packaging devices can maintain an array arrangement, thereby improving the convenience of transferring multiple LED packaging devices and electrical lighting testing.

[0104] S17: etching the passivation layer 2 so as to peel the temporary carrier 1 from the plurality of LED package devices.

[0105] The passivation layer 2 is completely immersed in the etching solution and continuously immersed for a second preset time to etch and remove the passivation layer 2, thereby peeling off the temporary carrier 1 and completing the packaging of multiple LED package devices.

[0106] The second preset time is T2, and the value range of T2 is: 15min≤T2≤30min. The passivation layer 2 is completely immersed in a liquid hydrofluoric acid solution, and the passivation layer 2 is etched and ablated by the hydrofluoric acid solution, that is, the silicon dioxide is fully in contact with the hydrofluoric acid solution and a chemical reaction occurs, so that the passivation layer 2 is ablated and removed, thereby realizing the removal of the temporary carrier 1.

[0107] Furthermore, the LED package device is cleaned with pure water to prevent the hydrofluoric acid solution from remaining at the bottom of the patterned metal layer 3 of the LED package device, thereby reducing the impact of the hydrofluoric acid solution on the LED package device.

[0108] Furthermore, the temporary carrier 1 can be recycled and can be used in the preparation process of the next batch of LED packaging devices after being cleaned. That is, the temporary carrier 1 can be recycled and reused, reducing material waste in the preparation of LED packaging devices.

[0109] Specifically, by setting the adhesive blue film 6, the several LED package devices after segmentation are temporarily fixed, that is, the several LED package devices can maintain an array arrangement relationship, so that the several LED package devices can be tested through a probe station, and metal probes with positive and negative poles are connected to each LED package device. Under preset current and voltage, the brightness, wavelength, leakage and other parameters of the LED package device are tested, so as to evaluate the luminous reliability of the LED package device.

[0110] An embodiment of the present invention provides a method for preparing an LED packaging device. The preparation method simultaneously completes the packaging of multiple LED packaging devices on the temporary carrier 1 by arranging a patterned metal layer 3 on a temporary carrier 1 and packaging LED chips 4. The temporary carrier 1 is used to carry out the supporting function of the LED packaging device packaging, thereby reducing the process steps of processing circuits on the temporary carrier 1, simplifying the packaging process of the LED packaging device, and improving the preparation efficiency of the LED packaging device.

[0111] Example 2:

[0112] The embodiment of the present invention provides an LED packaging device, please refer to Figure 10 The LED packaging device includes: a patterned metal layer 3, an LED chip 4 arranged on the patterned metal layer 3, and a packaging colloid 5 covering the LED chip 4, and the bottom surface of the patterned metal layer 3 is flush with the bottom surface of the packaging colloid 5.

[0113] Furthermore, the LED packaging device reduces the setting of the substrate, which can simplify the overall size of the LED packaging device, making the LED packaging device suitable for the installation and preparation of miniaturized display devices, that is, improving the versatility of the LED packaging device. By setting a patterned metal layer 3 to meet the electrical connection requirements of the LED packaging device, the complex circuit design is reduced, and the electrical connection between the LED packaging device and the circuit board is achieved based on the patterned metal layer 3, thereby improving the electrical connection stability between the LED packaging device and the circuit board. The patterned metal layer 3 can be adjusted according to the actual connection requirements of the circuit board, which can improve the reliability of the LED packaging device.

[0114] Furthermore, by setting a single-layer patterned metal layer 3 and combining it with a simplified structure without a substrate, the heat dissipation efficiency of the LED packaging device can be improved, the heat accumulation inside the LED packaging device can be reduced, and the risk of severe heat generation in the LED packaging device can be reduced, thereby extending the effective service life of the LED package.

[0115] Specifically, the thickness of the patterned metal layer 3 is between 2 μm and 3 μm, and the spacing between metal layers in the patterned metal layer 3 can be adjusted according to the packaging size of the LED packaging device, thereby meeting the packaging requirements of the LED packaging device.

[0116] Furthermore, the material of the patterned metal layer 3 can be a composite of one or more of platinum Pt, copper Au, and chromium Cr, so that the patterned metal layer 3 can meet the requirements of soldering fixation and electrical connection of the LED chip 4.

[0117] Specifically, the material of the encapsulation colloid 5 can be epoxy resin, or silica gel, or silicone resin, or glue cake, or fluorescent film. The thickness of the encapsulation colloid 5 can be adjusted according to the actual packaging requirements of the LED packaging device, and the thickness of the encapsulation colloid 5 is between 50μm and 500μm. The encapsulation colloid 5 can completely cover the LED chip 4 to prevent the LED chip 4 from direct contact with the external environment, thereby reducing the risk of damage to the LED chip 4.

[0118] Furthermore, the epoxy resin has good heat resistance, insulation and stability, so that the epoxy resin can meet the packaging requirements of the LED chip 4.

[0119] Furthermore, according to the actual use requirements of the LED packaging device, fluorescent powder can be added to the silicone resin or the epoxy resin, and the fluorescent adhesive film can be formed by fully mixing, so that the packaging colloid 5 can meet the packaging requirements of the LED chip 4 and adjust the light color of the LED packaging device.

[0120] Furthermore, by providing the encapsulating colloid 5 , the light emitting effects such as the light emitting angle and light emitting intensity of the LED chip 4 can be adjusted through the refraction of light inside the encapsulating colloid 5 .

[0121] Specifically, the bottom surface of the patterned metal layer 3 is flush with the bottom surface of the packaging colloid 5. The patterned metal layer 3 can be connected to an external circuit to meet the normal use of the LED packaging device. The setting spacing of the patterned metal layer 3 can be set according to the actual packaging requirements of the LED packaging device.

[0122] An embodiment of the present invention provides an LED packaging device, which completes the packaging of the LED chip 4 by setting a patterned metal layer 3 and cooperating with the packaging colloid 5, thereby simplifying the packaging operation of the LED chip 4, improving the packaging efficiency of the LED chip 4, and at the same time reducing the overall size of the LED packaging device to adapt to different LED packaging device installation requirements.

[0123] In addition, the above is a detailed introduction to the preparation method of an LED packaging device and the LED packaging device provided in the embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technical personnel in this field, based on the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for preparing an LED package device, characterized in that: The method for preparing the LED package device comprises: Providing a temporary carrier, and forming a passivation layer on the top surface of the temporary carrier based on vapor deposition; Forming a patterned mask on the passivation layer by photoresist preparation, and forming a plurality of patterned metal layers on the passivation layer by evaporation based on the patterned mask; Set chip mounting positions on each patterned metal layer, apply solder paste to each chip mounting position to form soldering points, and fit the solder pads of several LED chips to the corresponding soldering points; laminating the patterned metal layer to form a packaging colloid covering the plurality of LED chips through a laminating process; Marking circuits on the packaging colloid, cutting the packaging colloid along the circuits by a cutting mechanism and forming a plurality of LED package devices on the temporary carrier; Covering the top surfaces of the plurality of LED package devices with a layer of adhesive blue film; The passivation layer is etched to peel off the temporary carrier from the plurality of LED package devices.

2. The method for preparing an LED package device according to claim 1, wherein: The step of forming a patterned mask on the passivation layer by using a photoresist, and forming a plurality of patterned metal layers by evaporation on the passivation layer based on the patterned mask comprises: Spin-coating a photoresist on the passivation layer, and forming a patterned mask exposing a portion of the passivation layer on the photoresist by exposure and development; Depositing a metal material on the patterned mask by an electron beam evaporation machine to form an initial metal layer covering the passivation layer and the photoresist; The photoresist is removed, and a plurality of patterned metal layers are formed on the passivation layer.

3. The method for preparing an LED package device according to claim 1, wherein: The step of setting a chip mounting position on each patterned metal layer, applying solder paste to each chip mounting position to form a soldering point, and attaching the solder pads of the plurality of LED chips to the corresponding soldering points comprises: Marking chip mounting positions on the patterned metal layer, and applying solder paste on the chip mounting positions to form soldering points; The solder pads of the LED chip are correspondingly attached to the soldering points, and the soldering points are cured by returning to the furnace at a high temperature.

4. The method for preparing an LED package device according to claim 1, wherein: The step of laminating the patterned metal layer to form a packaging colloid covering the plurality of LED chips by laminating the patterned metal layer includes: Covering the patterned metal layer with an initial colloid so that the initial colloid covers the surface of the patterned metal layer and the LED chip; The glue pressing machine is set to continuously hot-press the initial colloid for a first preset time at a preset pressing pressure and a preset baking temperature to form the encapsulated colloid.

5. The method for preparing an LED package device according to claim 4, wherein: The preset pressing pressure is P, and the value range of P is: 3t≤P≤5t; The preset baking temperature is F, and the value range of F is: 110°C ≤ F ≤ 150°C; The first preset time is T1, and the value range of T1 is: 3h≤T≤5h.

6. The method for preparing an LED package device according to claim 1, wherein: Marking a circuit on the packaging colloid, cutting the packaging colloid along the circuit by a cutting mechanism, and forming a plurality of LED package devices on the temporary carrier board includes: Carving a circuit on the top surface of the packaging colloid, cutting the packaging colloid along the circuit with a grinding wheel, and forming a plurality of line grooves on the packaging colloid based on the cutting; The packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier.

7. The method for preparing an LED package device according to claim 6, wherein: The width of the grinding wheel is W, and the value range of W is: 40 μm≤W≤100 μm.

8. The method for preparing an LED package device according to claim 1, wherein: The step of etching the passivation layer so as to peel the temporary carrier from the plurality of LED package devices comprises: The passivation layer is completely immersed in the etching solution and the immersion is continued for a second preset time to etch and remove the passivation layer.

9. The method for preparing an LED package device according to claim 8, wherein: The second preset time is T2, and the value range of T2 is: 15min≤T2≤30min.

10. An LED package device, characterized in that: The LED package device is prepared based on the preparation method according to any one of claims 1 to 9; The LED package device includes a patterned metal layer, an LED chip arranged on the patterned metal layer, and a packaging adhesive layer covering the LED chip; The bottom surface of the patterned metal layer is flush with the bottom surface of the packaging adhesive layer.

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