Perovskite photovoltaic cell

Abstract

This invention provides a perovskite radiative photovoltaic cell, which sequentially comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode. The first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiative electrode formed by combining a conductive material with a radiation source.

Description

Technical Field

[0001] This application relates to perovskite radiant photovoltaic cells and methods for manufacturing the same. Background Technology

[0002] Photovoltaic cells are photoelectric conversion devices that convert light energy into electrical energy, with high energy conversion efficiency. They enable the effective utilization of clean and pollution-free solar energy. However, photovoltaic cells are significantly affected by weather and seasons.

[0003] Nuclear batteries, also known as isotope batteries, are devices that convert the energy released during the decay of radioactive isotopes into electrical energy. They have advantages such as long lifespan, excellent environmental stability, and miniaturization, but their energy conversion efficiency is relatively low. Nuclear batteries have various energy conversion methods. Among them, nuclear batteries that utilize the photoelectric effect to convert the energy of high-energy particles from a radioactive source into photogenerated charge carriers and form power output through PN junctions or PIN junctions are called radiation-voltaic nuclear batteries (hereinafter referred to as radiation-voltaic batteries). Their working principle is similar to that of photovoltaic cells.

[0004] If radiant photovoltaic cells and photovoltaic cells can be organically combined to synergistically leverage their respective advantages, then radiant photovoltaic cells with excellent environmental stability and high energy conversion efficiency can be achieved. Summary of the Invention

[0005] This application addresses the aforementioned problems and aims to provide a perovskite radiant photovoltaic cell that can simultaneously convert isotope decay particles or other energy particles into electrical energy along with solar energy, reducing the impact of lighting conditions, improving environmental stability, and increasing energy conversion efficiency. This application also aims to provide a method for manufacturing a perovskite radiant photovoltaic cell that reduces manufacturing steps and improves production efficiency.

[0006] The first aspect of this application provides a perovskite radiative photovoltaic cell, which sequentially comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode. The first electrode is a transparent electrode, the first charge transport layer includes an electron transport layer and the second charge transport layer includes a hole transport layer, or the first charge transport layer includes a hole transport layer and the second charge transport layer includes an electron transport layer, and the second electrode includes a radiative electrode formed by combining a radiation source and a conductive material.

[0007] In some embodiments, the aforementioned radiation source includes at least one of an alpha radiation source, a beta radiation source, an X-ray radiation source, and a gamma radiation source.

[0008] In some embodiments, the aforementioned alpha-type radioactive source includes 210 Po or its compounds, 228Th or its compounds, 235 U or its compounds, 238 Pu or its compounds 238 PuO2 microspheres, 241 Am or its compounds, 242 Cm or its compounds and 244 At least one of Cm or its compounds; the above-mentioned β-type radioactive sources include (C4H3) 3 H5-) n , 3 H2, Ti 3 H4 14 C or its compounds, 35 S or its compounds, 63 Ni or its compounds 90 Sr or its compounds, 90 Sr / 90 Y、 99 Tc or its compounds, 106 Ru or its compounds 137 Cs or its compounds, 144 Ce or its compounds, 147 Pm or its compounds, 151 Sm or its compounds and 226 At least one of Ra or its compounds.

[0009] In some embodiments, the radioactive source described above includes a β-type radioactive source, optionally including a Ti-type source. 3 H4 63 Ni、 90 Sr / 90 At least one of Y.

[0010] In some embodiments, the content of the radioactive source in the radioactive electrode is 90 wt% or less, and can be selected as 5 wt% to 30 wt%.

[0011] In some embodiments, the semiconductor materials of the first and second charge transport layers include at least one of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene, methoxytriphenylamine-fluoroformamidinium, poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid, poly3-hexylthiophene, and triphenylene-based triphenylene compounds. Amines, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, polythiophene, metal oxides of metallic elements including Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga or Cr, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, calcium fluoride, cuprous thiocyanate, isomethyl [6,6]-phenyl-C61-butyrate or isomethyl [6,6]-phenyl-C71-butyrate.

[0012] In some embodiments, the conductive materials of the first and second electrodes include organic conductive materials, inorganic conductive materials, or conductive materials obtained by mixing organic and inorganic conductive materials. The organic conductive materials include at least one of polymers of (3,4-ethylenedioxythiophene monomer), polythiophene, polyacetylene, polypyrrole, polyphenylene, polyphenylacetylene, polyaniline, epoxy resin, phenolic resin, and polypropylene. The inorganic conductive materials include at least one of transparent conductive oxides, metals, and carbon derivatives.

[0013] In some embodiments, the perovskite in the perovskite layer satisfies the chemical formula ABX3, wherein the A comprises the methylamine cation MA. + Formamidinium cation FA + Cesium cation Cs + At least one of the following, wherein B includes lead cation Pb 2+ and tin cation Sn 2+ At least one of the following, wherein X includes halide ions, COO - Or their mixed anions.

[0014] In some embodiments, the thickness of the first electrode is 50 nm to 1000 nm; and / or the thickness of the first charge transport layer is 10 nm to 1000 nm; and / or the thickness of the perovskite layer is 50 nm to 2000 nm; and / or the thickness of the second charge transport layer is 10 nm to 1000 nm; and / or the thickness of the second electrode is 10 nm to 500 nm.

[0015] In some embodiments, when the second charge transport layer is an electron transport layer, the difference between the Fermi level of the second electrode and the conduction band bottom level of the second charge transport layer is -1.0 eV to 1.0 eV, and the difference between the Fermi level of the second electrode and the valence band top level of the second charge transport layer is ≥1.0 eV.

[0016] In some embodiments, when the second charge transport layer is a hole transport layer, the difference between the Fermi level of the second electrode and the valence band top level of the second charge transport layer is -1.0 eV to 1.0 eV, and the difference between the Fermi level of the second electrode and the conduction band bottom level of the second charge transport layer is ≤ -1.0 eV.

[0017] A second aspect of this application is to provide a method for manufacturing a perovskite radiant photovoltaic cell, used to manufacture the perovskite radiant photovoltaic cell of this application. The method for manufacturing the perovskite radiant photovoltaic cell of this application includes: a step of forming a first charge transport layer on the first electrode; a step of forming a perovskite layer on the first charge transport layer; a step of forming a second charge transport layer on the perovskite layer; and a step of forming a second electrode on the second charge transport layer, wherein the second electrode is formed by combining a radiation source and a conductive material through at least one of the following methods: chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation, atomic layer deposition, magnetron sputtering, precursor liquid spin coating, precursor liquid slot coating, precursor liquid blade coating, and mechanical pressing.

[0018] In some embodiments, the second electrode is formed by combining a radiation source and a conductive material using at least one of the following methods: thermal evaporation co-evaporation, magnetron sputtering, and precursor liquid spin coating.

[0019] Invention Effects

[0020] According to this application, a perovskite radiant photovoltaic cell can be provided, which sequentially comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode. The second electrode is a radiation electrode formed by combining a conductive material and a radiation source. Therefore, the perovskite radiant photovoltaic cell of this application can simultaneously convert isotope decay particles or other energy particles and solar energy into electrical energy, and can improve energy conversion efficiency. Furthermore, the fact that the second electrode in the perovskite radiant photovoltaic cell of this application is formed by combining a conductive material and a radiation source can reduce the number of heterojunctions in the cell structure and improve cell performance.

[0021] According to the manufacturing method of the perovskite radiant photovoltaic cell of this application, the second electrode is formed by combining a radiation source and a conductive material, which can reduce the manufacturing steps of the cell and improve production efficiency. Attached Figure Description

[0022] Figure 1 This is a schematic diagram showing the structure of the perovskite radiant photovoltaic cell of this application. Detailed Implementation

[0023] The following detailed description, with appropriate reference to the accompanying drawings, discloses embodiments of the perovskite photovoltaic cell and its manufacturing method thereof. However, unnecessary details may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0024] In the description of the embodiments in this specification, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly indicating the number, specific order, or primary and secondary relationship of the indicated technical features.

[0025] In one embodiment of this application, a perovskite radiant photovoltaic cell is proposed. This perovskite radiant photovoltaic cell is as follows: Figure 1 As shown, it has a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence.

[0026] The first electrode includes a transparent electrode, through which sunlight can enter. The perovskite radiant photovoltaic cell of this application can utilize the sunlight incident from the first electrode for photoelectric conversion.

[0027] The first charge transport layer includes an electron transport layer and the second charge transport layer includes a hole transport layer, or the first charge transport layer includes a hole transport layer and the second charge transport layer includes an electron transport layer. The first charge transport layer, the perovskite layer, and the second charge transport layer together form the functional layers of a PIN structure battery.

[0028] In the perovskite-radioactive photovoltaic cell of this application, the second electrode is a radioactive electrode formed by combining a radioactive source and a conductive material. By making the second electrode radioactive, high-energy particles generated from the radioactive source can be absorbed by the perovskite layer and converted into energy in the functional layer of the PIN structure cell.

[0029] The second electrode is formed by combining a radioactive source and a conductive material. This reduces the number of heterogeneous interfaces in the battery structure, thereby reducing unnecessary interface matching, lowering the incidence of interface defects, reducing unnecessary series resistance, and improving charge transport efficiency within the device, thus enhancing battery performance. Furthermore, the composite formation of the second electrode allows for a smaller structural volume, facilitating battery cascading, enabling flexible application in production, and without affecting the manufacturing process of other structures within the battery.

[0030] The aforementioned radioactive sources may include at least one of alpha-type radioactive sources, beta-type radioactive sources, X-ray radioactive sources, and gamma-ray radioactive sources.

[0031] More specifically, alpha-type radioactive sources may include 210 Po or its compounds, 228 Th or its compounds, 235 U or its compounds, 238 Pu or its compounds 238 PuO2 microspheres, 241 Am or its compounds, 242 Cm or its compounds and 244 At least one of Cm or its compounds; β-type radioactive sources may include (C4H3) 3 H5-) n , 3 H2, Ti 3 H4 14 C or its compounds, 35 S or its compounds, 63 Ni or its compounds 90 Sr or its compounds, 90 Sr / 90 Y、 99 Tc or its compounds, 106 Ru or its compounds 137 Cs or its compounds, 144 Ce or its compounds, 147 Pm or its compounds, 151 Sm or its compounds and 226 At least one of Ra or its compounds.

[0032] The radioactive source is preferably a β-type radioactive source, more preferably including Ti. 3 H4 63 Ni or its compounds 90 Sr / 90 At least one of Y.

[0033] β-type radioactive sources emit relatively low-energy radiation particles, offering high safety and minimal radiation impact on perovskite and other battery structures. They utilize materials including Ti... 3H4 63 Ni or its compounds 90 Sr / 90 When at least one of Y is used as a radioactive source, it has high compatibility and good controllability in the preparation process.

[0034] Regarding the content of the radioactive source, the content of the radioactive source in the radiation electrode is less than 90 wt%, preferably 5 to 30 wt%.

[0035] The perovskite minerals in the perovskite layer of the perovskite photovoltaic cell of this application only need to satisfy the chemical formula ABX3, wherein the A above includes the methylamine cation MA. + Formamidinium cation FA + Cesium cation Cs + At least one of the following, wherein B is selected from lead cation Pb 2+ and tin cation Sn 2+ At least one of the above, wherein X includes a halide anion (F - Cl - ,Br - I - ) and COO - At least one of the following. Perovskites are used as absorber materials to absorb sunlight and radiation particles from radioactive sources.

[0036] The semiconductor material of the charge transport layer of the perovskite radiant photovoltaic cell of this application includes an n-type semiconductor material or a p-type semiconductor material. The first charge transport layer uses an n-type semiconductor material and the second charge transport layer uses a p-type semiconductor material, or the first charge transport layer uses a p-type semiconductor material and the second charge transport layer uses an n-type semiconductor material.

[0037] As semiconductor materials, at least one of the following materials and their derivatives can be listed: imide compounds, quinone compounds, fullerenes (C60) and their derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetratetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoroformamidinium (OMeTPA-FA), poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid (PE) DOT:PSS), poly-3-hexylthiophene (P3HT), triphenylamine with a triphenylene core (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-aniline)carbazole-spirobisfluorene (CzPAF-SBF), polythiophene, selected from Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe Metal oxides of the metal elements V, Sn, Zr, Sr, Ga or Cr, silicon oxide (SiO2), strontium titanate (SrTiO3), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), cuprous thiocyanate (CuSCN), isomethyl [6,6]-phenyl-C61-butyrate (PC60BM) or isomethyl [6,6]-phenyl-C71-butyrate (PC70BM).

[0038] Among them, the n-type semiconductor material preferably includes tin dioxide, titanium dioxide, zinc oxide, C60, [6,6]-phenyl-C61-butyrate isomethyl ester or [6,6]-phenyl-C71-butyrate isomethyl ester, and the p-type semiconductor material preferably includes 2,2',7,7'-tetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene, nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and poly3-hexylthiophene.

[0039] The conductive materials of the first and second electrodes of the perovskite radiant photovoltaic cell of this application include organic conductive materials, inorganic conductive materials, or conductive materials obtained by mixing organic and inorganic conductive materials. The organic conductive materials include at least one of the following: polymers of (3,4-ethylenedioxythiophene monomer), polythiophene, polyacetylene, polypyrrole, polyphenylene, polyphenylacetylene, polyaniline, epoxy resin, phenolic resin, and polypropylene. The inorganic conductive materials are selected from at least one of the following: transparent conductive oxides (FTO, ITO, AZO, etc.), metals, and carbon derivatives.

[0040] Regarding the thickness of each layer in the perovskite radiant photovoltaic cell of this application, for example, the thickness of the first electrode is 50nm to 1000nm; the thickness of the first charge transport layer is 10nm to 1000nm; the thickness of the perovskite layer is 50nm to 2000nm; the thickness of the second charge transport layer is 10nm to 1000nm; and the thickness of the second electrode is 10nm to 500nm.

[0041] In the perovskite radiant photovoltaic cell of this application, when the second charge transport layer is an electron transport layer, the energy difference between the Fermi level of the second electrode and the bottom conduction band level of the second charge transport layer is -1.0 eV to 1.0 eV, and the energy difference between the Fermi level of the second electrode and the top valence band level of the second charge transport layer is ≥1.0 eV; when the second charge transport layer is a hole transport layer, the energy difference between the Fermi level of the second electrode and the top valence band level of the second charge transport layer is -1.0 eV to 1.0 eV, and the energy difference between the Fermi level of the second electrode and the bottom conduction band level of the second charge transport layer is ≤-1.0 eV.

[0042] The difference between the Fermi level of the electrode material and the conduction band bottom level of the electron transport layer material affects the efficient transport of electrons. When the second charge transport layer is an electron transport layer, setting the difference between the Fermi level of the second electrode and the conduction band bottom level of the second charge transport layer to -1.0 eV to 1.0 eV can promote electron collection by the electrode, thereby increasing the switching voltage and current. Furthermore, setting a larger difference between the Fermi level of the second electrode and the valence band top level of the second charge transport layer, such as above 1.0 eV, can prevent holes from entering the electrode and recombinating with electrons, thus avoiding impact on battery power generation performance. When the second charge transport layer is a hole transport layer, the difference between the Fermi level of the second electrode and the valence band top level of the second charge transport layer can be set to -1.0 eV to 1.0 eV, and the difference between the Fermi level of the second electrode and the conduction band bottom level of the second charge transport layer can be set to a larger difference, such as above 1.0 eV.

[0043] In the perovskite radiant photovoltaic cell of this application, a reflective layer can also be provided at an appropriate location. For example, a reflective layer can be provided on the side of the second electrode opposite to the second charge transport layer. By providing a reflective layer, the energy utilization rate of the cell can be further improved.

[0044] In another embodiment of this application, a method for manufacturing a perovskite radiant photovoltaic cell is proposed. The method for manufacturing the perovskite radiant photovoltaic cell of this application includes: a step of forming a first charge transport layer on a first electrode; a step of forming a perovskite layer on the first charge transport layer; a step of forming a second charge transport layer on the perovskite layer; and a step of forming a second electrode on the second charge transport layer, wherein the second electrode is formed by combining a radiation source and a conductive material through at least one of the following methods: chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation, atomic layer deposition, magnetron sputtering, precursor liquid spin coating, precursor liquid slot coating, precursor liquid blade coating, and mechanical pressing.

[0045] The second electrode is preferably formed by a combination of at least one of the following methods: thermal evaporation co-evaporation, magnetron sputtering, and precursor liquid spin coating.

[0046] By using the above method to form a second electrode by combining a radiation source with a conductive material, the number of battery manufacturing steps can be reduced and production efficiency can be improved.

[0047] Example

[0048] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0049] Example 1

[0050] A glass substrate with a size of 2.0cm×2.0cm and covered with a 550nm FTO conductive layer was taken. The surface of the FTO conductive glass was cleaned twice with acetone and isopropanol respectively. Then it was immersed in deionized water and ultrasonically treated for 10 minutes. After drying in a forced-air drying oven, it was placed in a glove box (N2 atmosphere) and used as the first electrode.

[0051] A 3wt% SnO2 nanocolloid aqueous solution was spin-coated onto the FTO conductive layer using a spin coater (LEBO EZ6-S, the same below) at a speed of 5000 rpm. Then, it was heated at 150°C for 15 min on a constant temperature hot stage to obtain a first charge transport layer with a thickness of 30 nm.

[0052] A 1.5 mol / L FAPbI3-DMF solution was spin-coated onto the first charge transport layer at 4500 rpm using a spin coater. The layer was then transferred to a constant temperature hot plate and heated at 100 °C for 30 min. After cooling to room temperature, a perovskite layer with a thickness of 500 nm was formed.

[0053] A chlorobenzene solution of Spiro-OMeTAD at a concentration of 73 mg / mL was spin-coated onto the obtained perovskite layer using a spin coater at a speed of 4000 rpm. The layer was then allowed to stand at room temperature under a nitrogen atmosphere for 10–30 min to obtain a second charge transport layer with a thickness of 200 nm. This second charge transport layer was a hole transport layer.

[0054] The sample, which already has the first electrode, first charge transport layer, perovskite layer, and second charge transport layer formed, is placed in a vacuum coating machine and coated at 5 × 10⁻⁶. -4 Under vacuum conditions of Pa, co-evaporation was performed on the surface of the obtained second charge transport layer. 63 NiCl x And Ag, 63 NiCl x A radioactive Ag electrode with a thickness of 80 nm was obtained by using an Ag evaporation rate ratio of 0.1:1, which was then used as the second electrode.

[0055] Thus, the perovskite radiant photovoltaic cell of Example 1 was obtained.

[0056] Example 2

[0057] The sample, which has a first electrode, a first charge transport layer, a perovskite layer, and a second charge transport layer formed in the same manner as in Example 1, was placed in a vacuum coating machine and coated at 5 × 10⁻⁶ mm. -4 Ti was co-deposited on the surface of the obtained second charge transport layer under vacuum conditions of Pa. 3 H4 and Ag, Ti 3 The H4 to Ag evaporation rate ratio was 0.1:1 to obtain a radiation Ag electrode with a thickness of 80 nm, which was used as the second electrode.

[0058] Thus, the perovskite radiant photovoltaic cell of Example 2 was obtained.

[0059] Example 3

[0060] The first electrode is formed in the same manner as in Example 1.

[0061] A 3wt% NiOx nanocolloid aqueous solution was spin-coated onto the obtained FTO conductive layer using a spin coater at a speed of 4000 rpm. The layer was then heated at 300 °C for 60 min on a constant temperature hot plate to obtain a first charge transport layer with a thickness of 15 nm.

[0062] Next, a perovskite layer is formed on the first charge transport layer in the same manner as in Example 1.

[0063] A 20 mg / mL PC60BM-chlorobenzene solution was spin-coated onto the obtained perovskite layer using a spin coater at 1500 rpm. The layer was then heated at 100 °C for 10 min on a constant-temperature hot plate to obtain a second charge transport layer with a thickness of 60 nm. This second charge transport layer is an electron transport layer.

[0064] The sample, which already has the first electrode, first charge transport layer, perovskite layer, and second charge transport layer formed, is placed in a vacuum coating machine and coated at 5 × 10⁻⁶. -4 Under vacuum conditions of Pa, co-evaporation was performed on the surface of the obtained second charge transport layer. 63 NiCl x and Au, 63 NiCl x A radiation-induced Au electrode with a thickness of 80 nm was obtained by using an Au evaporation rate ratio of 0.1:1, which was then used as the second electrode.

[0065] Thus, the perovskite radiant photovoltaic cell of Example 3 was obtained.

[0066] Example 4

[0067] The sample, which has a first electrode, a first charge transport layer, a perovskite layer, and a second charge transport layer formed in the same manner as in Example 1, was placed in a vacuum coating machine and coated at 5 × 10⁻⁶ mm. -4 Under vacuum conditions of Pa, Hg was co-deposited on the surface of the obtained second charge transport layer. 35 S and Ag, Hg 35 The ratio of S to Ag evaporation rates was 0.1:1, resulting in a radiation-induced Ag electrode with a thickness of 80 nm, which was used as the second electrode.

[0068] Thus, the perovskite radiant photovoltaic cell of Example 4 was obtained.

[0069] Comparative Example 1

[0070] The sample, which has a first electrode, a first charge transport layer, a perovskite layer, and a second charge transport layer formed in the same manner as in Example 1, was placed in a vacuum coating machine and coated at 5 × 10⁻⁶ mm. -4 Under vacuum conditions of Pa, an Ag electrode with a thickness of 80 nm was deposited on the surface of the obtained second charge transport layer. Otherwise, the same procedure as in Example 1 was followed to form the perovskite photovoltaic cell of Comparative Example 1.

[0071] Comparative Example 2

[0072] The sample, which has a first electrode, a first charge transport layer, a perovskite layer, and a second charge transport layer formed in the same manner as in Example 1, was placed in a vacuum coating machine and coated at 5 × 10⁻⁶ mm.-4 Under vacuum conditions of Pa, an Ag electrode layer with a thickness of 80 nm was deposited as the second electrode. Then, the evaporation source was changed to... 63 NiCl x A radiation source layer with a thickness of 10 nm was deposited on the surface of the second electrode, thereby forming the perovskite radiation photovoltaic cell of Comparative Example 2.

[0073] Performance testing of perovskite radiant photovoltaic cells

[0074] Performance tests were conducted on the perovskite radiant photovoltaic cells of the examples and comparative examples.

[0075] Specifically, under atmospheric conditions, an AM1.5G standard light source was used as the simulated sunlight source. A four-channel digital source meter (Keithley 2440) was used to measure the battery's current-voltage characteristic curve under illumination, obtaining the battery's open-circuit voltage Voc, short-circuit current density Jsc, and fill factor FF. The battery's energy conversion efficiency Eff was then calculated. The battery's energy conversion efficiency is calculated using the following formula:

[0076] Eff = Pout / Popp

[0077] =Voc×Jsc×(Vmpp×Jmpp) / (Voc×Jsc)

[0078] =Voc×Jsc×FF

[0079] Where Pout, Popp, Vmpp, and Jmpp are the battery's operating output power, incident light power, battery's maximum power point voltage, and maximum power point current, respectively.

[0080] The band distribution of the charge transport layer and electrodes was measured using an Escalab 250Xi X-ray photoelectron spectroscopy (XPS) instrument (from Thermo Scientific) at room temperature and pressure.

[0081] The results are recorded in Table 1.

[0082]

[0083] As can be seen from the comparison between Examples 1 to 4 and Comparative Example 1, the energy conversion efficiency of the battery can be improved by forming a radiated second electrode.

[0084] As can be seen from the comparison between Example 1 and Comparative Example 2, by forming a radiation electrode, compared with forming an electrode layer and a radiation source layer separately, not only can the energy conversion efficiency of the battery be improved, but the electrode and radiation source can also be formed integrally, reducing the number of processes and reducing the thickness of the electrode layer and radiation source, thereby achieving battery miniaturization.

[0085] A comparison of Examples 1-3 and Example 4 shows that by selecting the materials for each layer, the difference between the Fermi level of the second electrode and the conduction band bottom level and the difference between the valence band top level of the second charge transport layer can meet specific ranges, thereby achieving better battery energy conversion efficiency.

[0086] It should be noted that this application is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same structure and effect as the technical concept within the scope of this application are included in the technical scope of this application. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing by combining some of the constituent elements of the embodiments, without departing from the spirit of this application, are also included in the scope of this application.

Claims

1. A perovskite radiant photovoltaic cell, characterized in that, It sequentially comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode. The first electrode includes a transparent electrode. The first charge transport layer includes an electron transport layer and the second charge transport layer includes a hole transport layer, or the first charge transport layer includes a hole transport layer and the second charge transport layer includes an electron transport layer. The second electrode includes a radiation electrode formed by combining a conductive material with a radiation source.

2. The perovskite radiant photovoltaic cell as described in claim 1, characterized in that, The radioactive source includes at least one of the following: α-type radioactive source, β-type radioactive source, X-ray radioactive source, and γ-ray radioactive source.

3. The perovskite radiant photovoltaic cell as described in claim 2, characterized in that, The α-type radioactive source includes 210 Po or its compounds, 228 Th or its compounds, 235 U or its compounds, 238 Pu or its compounds 238 PuO2 microspheres, 241 Am or its compounds, 242 Cm or its compounds and 244 At least one of Cm or its compounds; The β-type radioactive source includes (C4H3) 3 H5-) n , 3 H2, Ti 3 H4 14 C or its compounds, 35 S or its compounds, 63 Ni or its compounds 90 Sr or its compounds, 90 Sr / 90 Y、 99 Tc or its compounds, 106 Ru or its compounds 137 Cs or its compounds, 144 Ce or its compounds, 147 Pm or its compounds, 151 Sm or its compounds and 226 At least one of Ra or its compounds.

4. The perovskite radiant photovoltaic cell as described in claim 2, characterized in that, The radioactive source includes Ti. 3 H4 63 Ni or its compounds 90 Sr / 90 At least one of Y.

5. The perovskite radiant photovoltaic cell according to any one of claims 1 to 4, characterized in that, The content of the radioactive source in the radioactive electrode is less than 90 wt%, preferably 5 wt% to 30 wt%.

6. The perovskite radiant photovoltaic cell according to any one of claims 1 to 5, characterized in that, The semiconductor materials of the first and second charge transport layers include at least one of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene, methoxytriphenylamine-fluoroformamidinium, poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid, poly3-hexylthiophene, triphenylamine with a triphenylene core, 3,4 - Ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, polythiophene, metal oxides of metallic elements including Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga or Cr, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, calcium fluoride, cuprous thiocyanate, isomethyl [6,6]-phenyl-C61-butyrate or isomethyl [6,6]-phenyl-C71-butyrate.

7. The perovskite radiant photovoltaic cell according to any one of claims 1 to 6, characterized in that, The conductive materials of the first and second electrodes include organic conductive materials, inorganic conductive materials, or conductive materials obtained by mixing organic and inorganic conductive materials. The organic conductive material includes at least one of the following: polymers of (3,4-ethylenedioxythiophene monomer), polythiophene, polyacetylene, polypyrrole, polyphenylene, polyphenylacetylene, polyaniline, epoxy resin, phenolic resin, and polypropylene. The inorganic conductive material includes at least one of transparent conductive oxides, metals, and carbon derivatives.

8. The perovskite radiant photovoltaic cell according to any one of claims 1 to 7, characterized in that, The perovskite in the perovskite layer has the chemical formula ABX3, wherein the A comprises the methylamine cation MA. + Formamidinium cation FA + Cesium cation Cs + At least one of the following, wherein B includes lead cation Pb 2+ and tin cation Sn 2+ At least one of the following, wherein X comprises a halide anion and COO - At least one of them.

9. The perovskite radiant photovoltaic cell according to any one of claims 1 to 8, characterized in that, The thickness of the first electrode is 50 nm to 1000 nm; and / or The thickness of the first charge transport layer is 10 nm to 1000 nm; and / or The thickness of the perovskite layer is 50 nm to 2000 nm; and / or The thickness of the second charge transport layer is 10 nm to 1000 nm; and / or The thickness of the second electrode is 10 nm to 500 nm.

10. The perovskite radiant photovoltaic cell according to any one of claims 1 to 9, characterized in that, When the second charge transport layer is an electron transport layer, the difference between the Fermi level of the second electrode and the bottom conduction band level of the second charge transport layer is -1.0 eV to 1.0 eV, and the difference between the Fermi level of the second electrode and the top valence band level of the second charge transport layer is ≥1.0 eV.

11. The perovskite radiant photovoltaic cell according to any one of claims 1 to 9, characterized in that, When the second charge transport layer is a hole transport layer, the difference between the Fermi level of the second electrode and the valence band top level of the second charge transport layer is -1.0 eV to 1.0 eV, and the difference between the Fermi level of the second electrode and the conduction band bottom level of the second charge transport layer is ≤ -1.0 eV.

12. A method for manufacturing a perovskite photovoltaic cell, characterized in that, The perovskite radiant photovoltaic cell sequentially comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode. The manufacturing method includes: The process of forming the first charge transport layer on the first electrode The process of forming the perovskite layer on the first charge transport layer. The process of forming the second charge transport layer on the perovskite layer, and The process of forming the second electrode on the second charge transport layer. The first electrode is a transparent electrode. The first charge transport layer includes an electron transport layer and the second charge transport layer includes a hole transport layer, or the first charge transport layer includes a hole transport layer and the second charge transport layer includes an electron transport layer. The second electrode includes a radiation electrode formed by combining a conductive material with a radiation source. The second electrode is formed by combining a conductive material and a radiation source through at least one of the following methods: chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation, atomic layer deposition, magnetron sputtering, spin coating of precursor solution, slot coating of precursor solution, blade coating of precursor solution, and mechanical pressing.

13. The manufacturing method as described in claim 12, characterized in that, The second electrode is formed by combining a conductive material and a radiation source through at least one of the following methods: thermal evaporation co-evaporation, magnetron sputtering, and precursor liquid spin coating.

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