An SGT device integrated with a temperature detection component and a manufacturing method thereof

Abstract

The present invention relates to the field of semiconductor technology, and particularly to an SGT device integrated with a temperature detection component. The device includes an SGT component and a temperature detection component disposed on an epitaxial wafer. The temperature detection component includes a first doped region, a second doped region, an anode contact hole, a cathode contact hole, and a dielectric layer. The first doped region is above the epitaxial wafer, and the dielectric layer is above the first doped region. The second doped region is in a specified region of the first doped region and is in contact with the dielectric layer. The anode contact hole passes through the dielectric layer and is in contact with the first doped region. The cathode contact hole passes through the dielectric layer and is disposed corresponding to the specified region and is in contact with the second doped region. The depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doped region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doped region. The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doped region and is not less than the thickness of the dielectric layer. This device improves its own usage efficiency.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an SGT device integrated with a temperature detection component and a manufacturing method thereof. Background Art

[0002] MOSFETs can be roughly classified into the following categories: planar MOSFETs; Trench MOSFETs, mainly used in low-voltage fields; SGT (Shielded Gate Transistor) MOSFETs, mainly used in medium-voltage and low-voltage fields; SJ- (Super Junction) MOSFETs, mainly applied in high-voltage fields. Existing SGT MOSFETs have an integrated temperature detection component (such as a temperature-sensing diode) to measure the junction temperature of the entire SGT device through the integrated temperature detection component. Compared with the temperature measurement method of an SGT device with an NTC (Negative Temperature Coefficient) thermistor patch, the integrated temperature detection component on the SGT device can reduce the overall size of the entire SGT device and can more accurately measure the junction temperature of the device.

[0003] As Figure 1 shown, in an existing SGT device integrated with a temperature detection component, the cathode of the temperature detection component is equipotential with the drain of the MOSFET, and the anode of the temperature detection component is connected to a point higher than the drain of the MOSFET to utilize the linear relationship between the forward conduction voltage drop of the temperature detection component and temperature for temperature detection of the SGT device. In Figure 1 , it can be directly seen that the anode of the temperature detection component is connected to a voltage of VS + 5V, where VS is the power supply voltage, while the drain of the MOSFET is connected to the VS voltage. As Figure 2 shown, the abscissa represents temperature, and the ordinate represents the forward conduction voltage drop of the temperature-sensing diode. In Figure 2 , as the temperature increases, the forward conduction voltage drop of the temperature-sensing diode decreases, thereby performing temperature detection on the SGT device. However, since the anode of the temperature detection component of the existing SGT device needs to be connected to a potential higher than the power supply, the IC chip needs to increase in size to supply complex external circuits such as charge pumps, resulting in a problem of low usage efficiency of the existing SGT device. Summary of the Invention

[0004] Embodiments of the present application provide an SGT device integrated with a temperature detection component and a manufacturing method, which solve the technical problem in the prior art that the anode of the temperature detection component of the existing SGT device needs to be connected to a potential higher than the power supply, resulting in low utilization efficiency of the existing SGT device. It realizes that the SGT device integrated with the temperature detection component does not require an externally applied high potential, reduces the size of the IC chip, simplifies the circuit design of the IC chip, takes into account the performance of accurately detecting the temperature of the SGT device, and improves the utilization efficiency of the SGT device and other technical effects.

[0005] In a first aspect, embodiments of the present invention provide an SGT device integrated with a temperature detection component, including: an epitaxial wafer, and an SGT component and a temperature detection component disposed on the epitaxial wafer;

[0006] The temperature detection component includes a first doping region, a second doping region, an anode contact hole, a cathode contact hole, and a dielectric layer; the first doping region is located above the epitaxial wafer, and the dielectric layer is located above the first doping region; the second doping region is located in a specified region of the first doping region and is in contact with the dielectric layer; the anode contact hole penetrates through the dielectric layer and is in contact with the first doping region; the cathode contact hole penetrates through the dielectric layer, is disposed corresponding to the specified region, and is in contact with the second doping region;

[0007] Wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region;

[0008] The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and not less than the thickness of the dielectric layer.

[0009] Preferably, the temperature detection component further includes: a third doping region; the third doping region is located at the bottom of the anode contact hole, the implanted ions of the third doping region are of the same type as the implanted ions of the first doping region, and the concentration of the implanted ions of the third doping region is greater than the concentration of the implanted ions of the first doping region.

[0010] Preferably, the temperature detection component further includes: a metal contact electrode, an anode electrode metal layer, and a cathode electrode metal layer; the metal contact electrode is provided in both the anode contact hole and the cathode contact hole; the anode electrode metal layer and the cathode electrode metal layer are both located above the dielectric layer, the anode electrode metal layer is disposed corresponding to the anode contact hole, and the cathode electrode metal layer is disposed corresponding to the cathode contact hole.

[0011] Preferably, the temperature detection component further includes: isolation regions, and at least two isolation regions are respectively located on both sides of the region formed by the anode contact hole and the cathode contact hole.

[0012] Preferably, each isolation region includes: an isolation groove, an outer dielectric layer, and an inner dielectric layer. The outer dielectric layer is located on the bottom and side walls of the isolation groove, and the inner dielectric layer is located in the space formed by the outer dielectric layer.

[0013] Preferably, it further includes: a back metal layer, and the back metal layer is located under the epitaxial wafer.

[0014] Based on the same inventive concept, in a second aspect, the present invention further provides a manufacturing method of an SGT device integrated with a temperature detection component, including:

[0015] Forming an SGT component and a temperature detection component on the epitaxial wafer;

[0016] During the process of forming the temperature detection component, forming a first doping region on the epitaxial wafer, and forming a dielectric layer on the first doping region; forming a second doping region in a specified region of the first doping region, and making the second doping region in contact with the dielectric layer; forming an anode contact hole in the dielectric layer, and making the anode contact hole in contact with the first doping region; forming a cathode contact hole in the dielectric layer, setting the cathode contact hole corresponding to the specified region, and making the cathode contact hole in contact with the second doping region;

[0017] Wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region;

[0018] The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and not less than the thickness of the dielectric layer.

[0019] Preferably, during the process of forming the temperature detection component, it further includes:

[0020] Forming a third doping region at the bottom of the anode contact hole, wherein the implanted ions of the third doping region are of the same type as the implanted ions of the first doping region, and the concentration of the implanted ions of the third doping region is greater than the concentration of the implanted ions of the first doping region.

[0021] Preferably, during the process of forming the temperature detection component, it further includes:

[0022] Setting metal contact electrodes in both the anode contact hole and the cathode contact hole;

[0023] An anode electrode metal layer and a cathode electrode metal layer are formed on the dielectric layer, wherein the anode electrode metal layer is disposed corresponding to the anode contact hole, and the cathode electrode metal layer is disposed corresponding to the cathode contact hole.

[0024] Preferably, during the process of forming the temperature detection component, it further includes:

[0025] At least one isolation region is formed on each of the two sides of the region where the anode contact hole and the cathode contact hole are formed.

[0026] One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:

[0027] An embodiment of the present invention provides an SGT device integrated with a temperature detection component, which includes: an epitaxial wafer, and an SGT component and a temperature detection component disposed on the epitaxial wafer. The temperature detection component includes a first doping region, a second doping region, an anode contact hole, a cathode contact hole, and a dielectric layer; the first doping region is located above the epitaxial wafer, and the dielectric layer is located above the first doping region; the second doping region is located in a specified region of the first doping region and is in contact with the dielectric layer; the anode contact hole penetrates through the dielectric layer and is in contact with the first doping region; the cathode contact hole penetrates through the dielectric layer, is disposed corresponding to the specified region, and is in contact with the second doping region.

[0028] Wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region. The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and not less than the thickness of the dielectric layer.

[0029] Therefore, through the structure of the temperature detection component of the present SGT device, the anode of the temperature detection component of the present SGT device is at the same potential as the drain of the SGT component, so that it is not necessary to supply a high potential to the anode of the temperature detection component by an external circuit. It can also reduce the size of the IC chip, simplify the circuit design of the IC chip, take into account the performance of accurately detecting the temperature of the SGT device, and improve the use efficiency of the SGT device. And during the manufacturing process of the temperature detection component of the present SGT device, there is no need to use a P-base mask, but a P-type ion can be directly implanted on the epitaxial layer to form the first doping region, which improves the manufacturing efficiency and simplifies the manufacturing process. It can also enhance the compatibility with the manufacturing process of the SGT component. Description of the Drawings

[0030] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present invention. And throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0031] Figure 1 shows the circuit schematic diagram of the SGT device of the existing integrated temperature detection component in the prior art;

[0032] Figure 2 shows the linear relationship diagram between the forward conduction voltage drop of the temperature sensing diode and the temperature in the prior art;

[0033] Figure 3 shows the structural schematic diagram of the SGT device of the integrated temperature detection component in the embodiment of the present invention;

[0034] Figure 4 shows the circuit schematic diagram of the SGT device of the integrated temperature detection component in the embodiment of the present invention;

[0035] Figure 5 shows the structural schematic diagram of forming an isolation region in the epitaxial layer above the substrate in the embodiment of the present invention;

[0036] Figure 6 shows the structural schematic diagram of forming a first doped region in the embodiment of the present invention;

[0037] Figure 7 shows the structural schematic diagram of forming a second doped region in the embodiment of the present invention;

[0038] Figure 8 shows the structural schematic diagram of forming a dielectric layer in the embodiment of the present invention;

[0039] Figure 9 shows the structural schematic diagram of forming a cathode contact hole in the embodiment of the present invention;

[0040] Figure 10 shows the structural schematic diagram of forming an anode contact hole in the embodiment of the present invention;

[0041] Figure 11 shows the structural schematic diagram of forming a third doped region in the embodiment of the present invention;

[0042] Figure 12 shows the structural schematic diagram of forming the final temperature detection component in the embodiment of the present invention;

[0043] Figure 13 shows the structural schematic diagram of the existing SGT device in the embodiment of the present invention;

[0044] Figure 14 shows the step flow schematic diagram of the manufacturing method of the SGT device of the integrated temperature detection component in the embodiment of the present invention.

[0045] In the figure, 110, epitaxial wafer; 111, substrate; 112, epitaxial layer;

[0046] 130. Temperature detection component; 131. First doping region; 132. Second doping region; 133. Anode contact hole; 134. Cathode contact hole; 135. Dielectric layer; 136. Third doping region; 137. Metal contact electrode; 138. Anode electrode metal layer; 139. Cathode electrode metal layer; 140. Isolation region; 141. Isolation trench; 142. Outer dielectric layer; 143. Inner dielectric layer; 150. Back metal layer;

[0047] 120. SGT component; 121. SGT terminal region; 122. SGT source metal layer; 123. SGT dielectric layer; 124. First SGT doping region; 125. Second SGT doping region; 126. Third SGT doping region; 127. SGT contact hole; 128. SGT contact electrode; 1291. Gate trench; 1292. Control gate; 1293. Shielding gate; 1294. Gate dielectric layer. Detailed implementation manners

[0048] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be completely conveyed to those skilled in the art.

[0049] Embodiment 1

[0050] The first embodiment of the present invention provides an SGT device integrated with a temperature detection component, as Figure 3 shown, including: an epitaxial wafer 110, and an SGT component 120 and a temperature detection component 130 disposed on the epitaxial wafer 110. The temperature detection component 130 includes a first doping region 131, a second doping region 132, an anode contact hole 133, a cathode contact hole 134, and a dielectric layer 135. The first doping region 131 is located above the epitaxial wafer 110, and the dielectric layer 135 is located above the first doping region 131. The second doping region 132 is located in a designated area of the first doping region 131 and is in contact with the dielectric layer 135. The anode contact hole 133 passes through the dielectric layer 135 and is in contact with the first doping region 131. The cathode contact hole 134 passes through the dielectric layer 135, is disposed corresponding to the designated area, and is in contact with the second doping region 132. Among them, the depth of the anode contact hole 133 is greater than the sum of the thickness of the dielectric layer 135 and the thickness of the second doping region 132, and less than the sum of the thickness of the dielectric layer 135 and the thickness of the first doping region 131. The depth of the cathode contact hole 134 is less than the sum of the thickness of the dielectric layer 135 and the thickness of the second doping region 132, and is not less than the thickness of the dielectric layer 135.

[0051] Specifically, as Figure 3 shown, the temperature detection component 130 of this embodiment is essentially a temperature detection diode. The designated area of the first doping region 131 is the area corresponding to the cathode contact hole 134. The epitaxial wafer 110 includes a substrate 111 and an epitaxial layer 112, and the epitaxial layer is located above the substrate. The substrate is an N-type silicon substrate, and the epitaxial layer is an N-type epitaxial layer.

[0052] In the temperature detection component 130, the first doping region 131 is located on the upper surface of the epitaxial wafer 110, that is, on the epitaxial layer of the epitaxial wafer 110. The first doping region 131 is a P-type region. As Figure 1 shown, the black dot on white background pattern on the epitaxial layer represents the first doping region 131. The dielectric layer 135 is located above the first doping region 131. That is, the black and white grid pattern above the first doping region 131 represents the dielectric layer 135. The material of the dielectric layer 135 is nitride or oxide. The dielectric layer 135 is an ILD (Inter Layer Dielectric) dielectric layer. The ILD dielectric layer refers to the dielectric material formed between the transistor and the first layer of metal to form electrical isolation. The ILD dielectric layer can effectively reduce the parasitic capacitance between the metal and the substrate and improve the parasitic field effect transistor formed by the metal spanning different regions. The second doping region 132 is located in the designated area of the first doping region 131 and is in contact with the dielectric layer 135. Figure 1 The square pattern in the first doping region 131 in represents the second doping region 132. The second doping region 132 is an N-type region, specifically an N+ region. The implanted ions of the second doping region 132 are of the same type as those of the epitaxial layer of the epitaxial wafer 110, and the ion concentration of the second doping region 132 is higher than that of the epitaxial layer to reduce the contact resistance of the cathode of the temperature detection component 130. The anode contact hole 133 passes through the dielectric layer 135 and is in contact with the first doping region 131. The cathode contact hole 134 passes through the dielectric layer 135, is correspondingly arranged with the designated area, and is in contact with the second doping region 132.

[0053] Moreover, in this embodiment, the depths of the anode contact hole 133 and the cathode contact hole 134 are limited. The depth of the anode contact hole 133 is greater than the sum of the thickness of the dielectric layer 135 and the thickness of the second doping region 132, and less than the sum of the thickness of the dielectric layer 135 and the thickness of the first doping region 131. This means that the depth of the anode contact hole 133 is greater than the junction depth of the N+ region and less than the junction depth of the P-type region. The depth of the cathode contact hole 134 is less than the sum of the thickness of the dielectric layer 135 and the thickness of the second doping region 132, and not less than the thickness of the dielectric layer 135. This means that the depth of the cathode contact hole 134 is less than the junction depth of the N+ region and not less than the thickness of the dielectric layer 135.

[0054] Therefore, the anode of the temperature detection component 130 of the SGT device in this embodiment is equipotential with the drain of the SGT component 120, so that it is not necessary to supply a high potential to the anode of the temperature detection component 130 by an external circuit. It can also reduce the size of the IC chip, simplify the circuit design of the IC chip, take into account the performance of accurately detecting the temperature of the SGT device, and improve the use efficiency of the SGT device.

[0055] Next, the specific structure of the SGT device in this embodiment will be elaborated in detail in conjunction with Figure 3 :

[0056] The temperature detection component 130 further includes: a third doping region 136. The third doping region 136 is located at the bottom of the anode contact hole 133, that is, the third doping region 136 is located in the first doping region 131. As Figure 1 shown, the white dot on black background pattern at the bottom of the anode contact hole 133 represents the third doping region 136. The implanted ions of the third doping region 136 are of the same type as those of the first doping region 131, and the concentration of the implanted ions of the third doping region 136 is greater than that of the implanted ions of the first doping region 131 to reduce the contact resistance of the anode of the temperature detection component 130. In this way, it means that the third doping region 136 is a P-type region, specifically a P+ region. Moreover, the implantation dose of the third doping region 136 is lower than that of the second doping region 132 to avoid the formation of a P+ region by inversion in the second doping region 132.

[0057] The temperature detection component 130 further includes: a metal contact electrode 137, an anode electrode metal layer 138, and a cathode electrode metal layer 139. Metal contact electrodes 137 are provided in both the anode contact hole 133 and the cathode contact hole 134. As Figure 1 shown, the diamond pattern in the anode contact hole 133 and the cathode contact hole 134 represents the metal contact electrode 137. The anode electrode metal layer 138 and the cathode electrode metal layer 139 are both located on the dielectric layer 135. The anode electrode metal layer 138 is correspondingly arranged with the anode contact hole 133, and the cathode electrode metal layer 139 is correspondingly arranged with the cathode contact hole 134.

[0058] Specifically, the anode electrode metal layer 138 is correspondingly arranged with the anode contact hole 133 such that the anode electrode metal layer 138 is in contact with the top of the anode contact hole 133, and the area of the anode electrode metal layer 138 covers the contact surface between the anode contact hole 133 and the anode electrode metal layer 138. Similarly, the cathode electrode metal layer 139 is correspondingly arranged with the cathode contact hole 134 such that the cathode electrode metal layer 139 is in contact with the top of the cathode contact hole 134, and the area of the cathode electrode metal layer 139 covers the contact surface between the cathode contact hole 134 and the cathode electrode metal layer 139. The material of the metal contact electrode 137 is tungsten or an electrode material set according to actual requirements. The materials of the anode electrode metal layer 138 and the cathode electrode metal layer 139 can be the same or different. The materials of the anode electrode metal layer 138 or the cathode electrode metal layer 139 include but are not limited to aluminum cylinders.

[0059] The anode of the temperature detection component 130 is formed by the anode contact hole 133, the metal contact electrode 137, and the anode electrode metal layer 138. The cathode of the temperature detection component 130 is formed by the cathode contact hole 134, the metal contact electrode 137, and the cathode electrode metal layer 139. It can be seen that the cathode of the temperature detection component 130 of the SGT device in this embodiment is not equipotential with the drain of the SGT component 120, but the anode of the temperature detection component 130 is equipotential with the drain of the SGT component 120, avoiding the need to apply a high potential externally to the SGT device integrated with the temperature detection component 130. This reduces the size of the IC chip, simplifies the circuit design of the IC chip, and improves the usage efficiency of the SGT device.

[0060] The temperature detection component 130 further includes: isolation regions 140. At least two isolation regions 140 are respectively located on both sides of the region formed by the anode contact hole 133 and the cathode contact hole 134. For example, in Figure 1 , one isolation region 140 is provided on the left side of the anode contact hole 133, and one isolation region 140 is provided on the right side of the cathode contact hole 134. The function of the isolation region 140 is to electrically isolate the SGT component from the temperature detection component.

[0061] Specifically, each isolation region 140 includes: an isolation groove 141, an outer dielectric layer 142, and an inner dielectric layer 143. The outer dielectric layer 142 is located on the bottom and side walls of the isolation groove 141, and the inner dielectric layer 143 is located in the space formed by the outer dielectric layer 142. The material of the outer dielectric layer 142 is an oxide, and the material of the inner dielectric layer 143 is a combination of polysilicon. Figure 1 The black and white grid pattern in the isolation groove 141 in

[0062] This SGT device further includes: a back metal layer 150, which is located under the epitaxial wafer 110. The back metal layer 150 is the drain metal layer of the SGT component 120.

[0063] In the embodiments of the present invention, the specific structure of the SGT component 120 in the SGT device is not limited. The structure of the SGT component 120 is the structure of an SGT MOSFET. Any SGT component 120 that can integrate the temperature detection component 130 falls within the scope of the SGT component 120 in the embodiments of the present invention. In this embodiment, Figure 3 taking the SGT component 120 shown as an example to illustrate the structure of the SGT component 120. The SGT component 120 includes: a cell structure, SGT terminal regions 121 located on both sides of the cell structure, and an SGT source metal layer 122 located above the cell structure and the SGT terminal regions 121. The cell structure includes: at least two gate regions, at least three SGT doping regions, SGT electrode regions located in each SGT doping region, and an SGT dielectric layer 123.

[0064] In the cell structure, the gate regions and the SGT doping regions are arranged alternately. As Figure 3 shown, on the right side of the first SGT terminal region 121 is an SGT doping region, on the right side of this SGT doping region is a gate region, on the right side of this gate region is an SGT doping region, and so on alternately until the second SGT terminal region 121. The SGT dielectric layer 123 is located above the gate regions, the SGT doping regions, and the SGT terminal regions 121, and is located under the SGT source metal layer 122. Figure 1 The black and white grid pattern shown under the SGT source metal layer 122 and above the gate regions, the SGT doping regions, and the SGT terminal regions 121 represents the SGT source metal layer 122.

[0065] Each SGT doping region includes a first SGT doping region 124 and a second SGT doping region 125. The first SGT doping region 124 is located in the epitaxial layer and is in contact with the SGT dielectric layer 123. The second SGT doping region 125 is located in the first SGT doping region 124, and the second SGT doping region 125 is in contact with the SGT dielectric layer 123. Figure 1The black dot on white background pattern in the epitaxial layer represents the first SGT doping region 124, and the grid pattern in the first SGT doping region 124 represents the second SGT doping region 125. The first SGT doping region 124 is a P-type region, and the second SGT doping region 125 is an N+ region. During the manufacturing process of the SGT component 120, the entire P-type region is formed on the epitaxial layer 112 through processes such as etching and doping. The first SGT doping region 124 and the first doping region 131 of the temperature detection component 130 can be the same P-type region fabricated. Through other corresponding processes, such as the manufacturing process of the SGT terminal region 121 and the manufacturing process of the isolation region 140 of the temperature detection component 130, the first SGT doping region 124 and the first doping region 131 of the temperature detection component 130 are formed to improve the manufacturing efficiency, reduce the manufacturing cost, and make the manufacturing process of the SGT component compatible with the manufacturing process of the temperature detection component. Of course, the first SGT doping region 124 and the first doping region 131 can be fabricated separately, that is, the first SGT doping region 124 and the first doping region 131 are formed by separate regions. For example, first, a groove corresponding to the first SGT doping region 124 is etched between the two SGT terminal regions 121, and then a doping process is performed in the groove to form the first SGT doping region 124. Then, the first doping region 131 is continuously fabricated between the two isolation regions 140. The specific manufacturing process can be set according to actual requirements.

[0066] For the SGT electrode region in each SGT doping region, the SGT electrode region passes through the SGT dielectric layer 123 and the second SGT doping region 125 of the SGT doping region, and is in contact with the first SGT doping region 124 of the SGT doping region. The SGT electrode region in each SGT doping region includes an SGT contact hole 127, an SGT contact electrode 128, and a third SGT doping region 126. In the SGT electrode region in each SGT doping region, the third SGT doping region is located at the bottom of the SGT contact hole 127, that is, the third SGT doping region is located in the first SGT doping region 124. The third SGT doping region is a P+ region. The SGT contact electrode 128 is located in the SGT contact hole 127. The top of the SGT electrode region in each SGT doping region is also in contact with the SGT source metal layer 122. Figure 1 The diamond pattern in the SGT contact hole 127 represents the SGT contact electrode 128, and the white dot on black background pattern at the bottom of the SGT contact hole 127 represents the third SGT doping region.

[0067] Each gate region includes a gate trench 1291, a control gate 1292, a shielding gate 1293, and a gate dielectric layer 1294. Both the control gate 1292 and the shielding gate 1293 are located in the gate trench 1291, and the control gate 1292 is located above the shielding gate 1293. The gate dielectric layer 1294 is located between the control gate 1292 and the shielding gate 1293, between the control gate 1292 and the sidewalls of the gate trench 1291, and between the shielding gate 1293 and the sidewalls and bottom of the gate trench 1291. Figure 1 The black-and-white grid pattern in the gate trench 1291 in Figure 1 represents the gate dielectric layer 1294, the dense black dot on white background pattern represents the control gate 1292, and the sparse black dot on white background pattern represents the shielding gate 1293. During the manufacturing process of the gate trench 1291, the gate dielectric layer 1294 is first set, and then the shielding gate 1293 is formed at the bottom of the groove formed by the gate dielectric layer 1294. The gate dielectric layer 1294 is formed on the shielding gate 1293, and the control gate 1292 is formed in the gate dielectric layer 1294 formed on the gate dielectric layer 1294 on the shielding gate 1293.

[0068] The isolation region 140 of the SGT terminal region 121 coincides with that of the temperature detection component 130, and the specific structure will not be elaborated. Of course, the SGT terminal region 121 can also be set according to actual needs as long as it can play an isolation role. Finally, the drain of the SGT device is connected to the anode metal layer of the temperature detection component 130 through the package frame lead to make the two at the same potential. It should also be noted that the specific manufacturing method of the SGT component 120 in this embodiment is not limited, and any manufacturing method of the SGT component 120 that can integrate the temperature detection component 130 belongs to the scope of the manufacturing method of the SGT component 120 in the embodiment of the present invention.

[0069] The circuit schematic diagram of the SGT device in this embodiment is as Figure 4As shown in the figure, first, control the depth of the anode contact hole 133 to be greater than the junction depth of the N+ region and less than the junction depth of the P-type region. The depth of the cathode contact hole 134 is less than the junction depth of the N+ region and not less than the thickness of the dielectric layer 135. Then, form the anode of the temperature detection component 130 (i.e., the temperature detection diode) through the anode contact hole 133, the metal contact electrode 137, and the anode electrode metal layer 138. Form the cathode of the temperature detection component 130 through the cathode contact hole 134, the metal contact electrode 137, and the cathode electrode metal layer 139. Finally, connect the drain of the SGT device to the anode metal layer of the temperature detection component 130 through the package frame lead, so that the anode of the temperature detection component 130 is equipotential with the drain of the SGT component 120. Therefore, there is no need to apply a high potential to the temperature detection component 130 of this SGT device, which reduces the size of the IC chip, simplifies the circuit design of the IC chip, and improves the usage efficiency of the SGT device. It can also reflect the junction temperature of the SGT component 120 in real time and accurately, ensuring the efficient and accurate temperature detection function of this SGT device.

[0070] Next, the manufacturing process of the temperature detection component 130 in this embodiment will be specifically described:

[0071] Step 1: As Figure 5 shown in the figure, grow an N-type epitaxial layer on the surface of the N-type silicon substrate. Perform photolithography and etching operations at specified positions on the epitaxial layer to form two isolation grooves 141. Subsequently, deposit the outer dielectric layer 142 and the inner dielectric layer 143 and etch back, so that the upper surfaces of the outer dielectric layer 142 and the inner dielectric layer 143 in the isolation grooves 141 are flush with the silicon plane, forming two isolation regions 140. As Figure 3 shown in the figure, the isolation region 140 is the isolation region 140 between the temperature detection component 130 and the SGT component 120. The depth range of each isolation region 140 is 1.5 μm to 5 μm, and the width range is 0.3 um to 3 um. And a back metal layer 150 is also formed under the substrate.

[0072] Step 2: As Figure 6 shown in the figure, perform a maskless P-type ion implantation operation on the epitaxial layer to form the first doped region 131, that is, the P-type region. The junction depth range of the P-type region is 0.5 um to 1 um.

[0073] Step 3: As Figure 7 shown in the figure, through the mask, perform photolithography and N-type ion implantation operations in the specified area of the first doped region 131 to form the second doped region 132, that is, the N+ region. The ion concentration after implantation in the second doped region 132 is higher than that of the epitaxial layer to reduce the contact resistance of the cathode of the temperature detection component 130. The depth range of the N+ region is 0.15 um to 0.3 um.

[0074] Step 4: As Figure 8As shown, an ILD dielectric layer 135 is deposited on the epitaxial layer, and the thickness range of the dielectric layer 135 is 0.4 um to 1 um.

[0075] Step 5: As Figure 9 shown, through a mask, photolithography operations and dielectric layer etching operations are sequentially performed in a specified area of the first doping region 131 to form a cathode contact hole 134. The etching depth should be greater than or equal to the thickness of the dielectric layer 135 and less than the N+ region junction depth. The width range of the cathode contact hole 134 is 0.3 um to 3 um.

[0076] Step 6: As Figure 10 shown, through a mask, photolithography operations and dielectric layer etching operations are sequentially performed in a specified area of the first doping region 131 to form an anode contact hole 133. The etching depth should be greater than the N+ region junction depth and less than the P-type region junction depth. The width range of the anode contact hole 133 is 0.3 um to 0.8 um.

[0077] Step 7: As Figure 11 shown, a maskless P-type ion implantation operation is performed in the anode contact hole 133 to form a third doping region 136, that is, a P+ region. The implantation dose of the third doping region 136 P+ region is higher than the implantation dose of the P-type region of the first doping region 131 in step 2 to reduce the contact resistance of the anode of the temperature detection component 130. It should be noted that since the implantation dose of the second doping region 132 N+ region in step 3 is usually much higher than the implantation dose of the third doping region 136 P+ region, a P+ region will not be formed by inversion in the second doping region 132 N+ region.

[0078] Step 8: As Figure 12 shown, a metal contact electrode 137 is formed in the anode contact hole 133 and the cathode contact hole 134, and then a metal layer is formed on the dielectric layer 135. Subsequently, through a mask, photolithography operations and metal layer etching operations are sequentially performed at the positions corresponding to the anode contact hole 133 and the cathode contact hole 134 to form two electrically isolated electrode metal layers, that is, the anode electrode metal layer 138 and the cathode electrode metal layer 139 are obtained. The metal contact electrode 137 is tungsten, and the metal layer is aluminum copper, and finally the complete temperature detection component 130 of the present invention is formed.

[0079] It should also be noted that, according to the manufacturing process of the temperature detection component 130 of the present SGT device, certain structures of the SGT component 120 of the present SGT device can also be fabricated for reference to enhance the compatibility with the manufacturing process of the SGT component 120. For example, the SGT dielectric layer 123 of the SGT device and the dielectric layer 135 of the temperature detection component 130 can be deposited to form the same dielectric layer 135 during the manufacturing process, and the first SGT doping region 124 of the SGT device and the first doping region 131 of the temperature detection component 130 can form the same P-type region during the manufacturing process.

[0080] During the manufacturing process of the temperature detection component 130 in this embodiment, especially during the process of forming the P-type region of the first doping region 131, there is no need to use a P-base mask plate. Instead, through processes such as etching and doping, P-type ions can be directly implanted on the epitaxial layer to form the first doping region 131, improving the manufacturing efficiency and simplifying the manufacturing process. Through the manufacturing process of the temperature detection component 130 in this embodiment, the present SGT device can be fabricated quickly and efficiently, and the junction temperature of the SGT device can be detected in real time and accurately through the temperature detection component 130, improving the usage efficiency of the SGT device. Moreover, the present SGT device does not require an externally applied high potential, reducing the size of the IC chip and simplifying the circuit of the IC chip.

[0081] Comparing the specific structure and manufacturing process of the SGT device in this embodiment with those of the existing SGT device:

[0082] As Figure 13 shown, the SGT component of the existing SGT device and the exemplary SGT component 120 of the present SGT device are of the same SGT MOSFET structure. Based on Figure 3 the shown structure and the patterns of each component, the composition structure of the temperature detection component of the existing SGT device can be understood. The temperature detection component of the existing SGT device includes an isolation region, a P-base region, an N+ region, an anode contact hole, a cathode contact hole, a P+ region provided at the bottom of the anode contact hole, a P+ region provided at the bottom of the cathode contact hole, an ILD dielectric layer, a metal contact electrode located in the anode contact hole, a metal contact electrode located in the cathode contact hole, an anode electrode metal layer, and a cathode electrode metal layer. In Figure 13Among them, the ILD dielectric layer is located above the epitaxial layer. The P-base region and the N+ region are both located in the epitaxial layer and are in contact with the ILD dielectric layer. The anode electrode metal layer and the cathode electrode metal layer are both located above the ILD dielectric layer. The anode electrode metal layer is correspondingly arranged with the anode contact hole, and the cathode electrode metal layer is correspondingly arranged with the cathode contact hole. The P-base region and the N-substrate without P-base implantation respectively serve as the P-type region and the N-type region of the temperature detection component of the existing SGT device. The anode contact hole penetrates through the ILD dielectric layer and penetrates into the P-base region. The top of the anode contact hole is in contact with the anode electrode metal layer. The cathode contact hole penetrates through the ILD dielectric layer and the N+ region, and the bottom of the cathode contact hole is in contact with the epitaxial layer. The top of the cathode contact hole is in contact with the cathode electrode metal layer.

[0083] Thus, the circuit schematic diagram of the existing SGT device is as Figure 1 shown. The cathode of the temperature detection component (i.e., the temperature detection diode) of the existing SGT device is equipotential with the drain of its own SGT component. The anode of the temperature detection component of the existing SGT device needs to be connected to a potential higher than the drain to utilize the linear relationship between the forward conduction voltage drop of the diode and the temperature to achieve temperature detection. Moreover, during the manufacturing process of the temperature detection component of the existing SGT device, it is necessary to use a P-base mask to complete the P-base implantation in the specified area to form the P-base region. This results in a complex manufacturing process for the temperature detection diode and poor compatibility with the SGT MOSFET process.

[0084] In the temperature detection component of the existing SGT device, due to the large concentration difference between the P+ region and the N-epitaxial layer in the cathode of the temperature detection diode, a parasitic P+N- junction is formed in the cathode region of the temperature detection diode, which affects the linearity between the forward conduction voltage drop of the temperature detection PN junction and the temperature. Moreover, the PNP parasitic triode composed of the P-base region (i.e., the P-type region) of the anode, the N-epitaxial layer of the cathode, and the P+ region further increases the failure risk of the device under extreme conditions. In addition, the cathode of the temperature detection diode is equipotential with the drain of the SGT MOSFET of the same N-type substrate and N-epitaxial layer. To achieve the temperature detection function, it is necessary to provide a potential for the anode higher than the drain through a complex external IC circuit.

[0085] There is also a specific example. The existing temperature detection integration method that does not require an externally applied high potential is to add an insulating silicon nitride layer and oxide layer on the surface of the power chip as an isolation layer, then deposit polysilicon on this isolation layer, and then etch and ion-implant the polysilicon according to a specific pattern to form a temperature detection polysilicon diode that is completely electrically isolated from the SGT MOSFET. However, the manufacturing process of the temperature detection polysilicon diode is complex, and its compatibility with the SGT MOSFET process is poor. Due to the existence of isolation layers such as the insulating oxide layer and silicon nitride layer, the temperature detection polysilicon diode cannot accurately and real-time reflect the junction temperature of the device.

[0086] Compared with the existing SGT device integrated with a temperature detection component, the anode of the temperature detection component 130 of the SGT device in this embodiment is at the same potential as the drain of the SGT component 120, so that there is no need for an external circuit to supply a high potential to the anode of the temperature detection component 130. It can also reduce the size of the IC chip, simplify the circuit design of the IC chip, take into account the performance of accurately detecting the temperature of the SGT device, and improve the usage efficiency of the SGT device. And in the manufacturing process of the temperature detection component 130 of this SGT device, there is no need to use a P-base mask, but directly implant P-type ions on the epitaxial layer to form the first doped region, which improves the manufacturing efficiency and simplifies the manufacturing process. It can also enhance the compatibility with the manufacturing process of the SGT component 120.

[0087] Embodiment 2

[0088] Based on the same inventive concept, the second embodiment of the present invention also provides a manufacturing method of an SGT device integrated with a temperature detection component, as Figure 14 shown, including:

[0089] S101, forming an SGT component and a temperature detection component on an epitaxial wafer;

[0090] S102, during the process of forming the temperature detection component, forming a first doped region on the epitaxial wafer, forming a dielectric layer on the first doped region; forming a second doped region in a specified region of the first doped region, and bringing the second doped region into contact with the dielectric layer; forming an anode contact hole in the dielectric layer, and bringing the anode contact hole into contact with the first doped region; forming a cathode contact hole in the dielectric layer, setting the cathode contact hole corresponding to the specified region, and bringing the cathode contact hole into contact with the second doped region; wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doped region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doped region; the depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doped region, and not less than the thickness of the dielectric layer.

[0091] As an alternative embodiment, during the process of forming the temperature detection component, it further includes:

[0092] A third doped region is formed at the bottom of the anode contact hole, wherein the implanted ions of the third doped region are of the same type as those of the first doped region, and the concentration of the implanted ions of the third doped region is greater than that of the implanted ions of the first doped region.

[0093] As an alternative embodiment, during the process of forming the temperature detection component, it further includes:

[0094] Metal contact electrodes are disposed in both the anode contact hole and the cathode contact hole;

[0095] An anode electrode metal layer and a cathode electrode metal layer are formed on the dielectric layer, wherein the anode electrode metal layer is disposed corresponding to the anode contact hole, and the cathode electrode metal layer is disposed corresponding to the cathode contact hole.

[0096] As an alternative embodiment, during the process of forming the temperature detection component, it further includes:

[0097] At least one isolation region is formed on each side of the two sides of the region where the anode contact hole and the cathode contact hole are formed.

[0098] As an alternative embodiment, each isolation region includes: an isolation groove, an outer dielectric layer, and an inner dielectric layer. The outer dielectric layer is located on the bottom and side walls of the isolation groove, and the inner dielectric layer is located in the space formed by the outer dielectric layer.

[0099] Since the manufacturing method of the SGT device of the integrated temperature detection component introduced in this embodiment is the manufacturing method adopted for the SGT device of the integrated temperature detection component in Embodiment 1 of the present application, those skilled in the art can understand the specific implementation manners and various variations of the manufacturing method of the SGT device of the integrated temperature detection component in this embodiment based on the SGT device of the integrated temperature detection component introduced in Embodiment 1 of the present application. Therefore, the implementation of how the manufacturing method of the SGT device of the integrated temperature detection component realizes the SGT device in Embodiment 1 of the present application will not be described in detail herein. As long as those skilled in the art implement the manufacturing adopted for the SGT device of the integrated temperature detection component in Embodiment 1 of the present application, it falls within the scope of protection of the present application.

[0100] Those skilled in the art should understand that although the preferred embodiments of the present invention have been described, once those skilled in the art know the basic creative concepts, additional changes and modifications can be made to these embodiments. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of the present invention.

[0101] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these changes and modifications.

Claims

1. An SGT device integrated with a temperature detection component, characterized in that, Comprising: An epitaxial wafer, and an SGT component and a temperature detection component disposed on the epitaxial wafer; The temperature detection component includes a first doping region, a second doping region, an anode contact hole, a cathode contact hole, and a dielectric layer; the first doping region is located above the epitaxial wafer, and the dielectric layer is located above the first doping region; the second doping region is located in a specified region of the first doping region and is in contact with the dielectric layer; the anode contact hole penetrates through the dielectric layer and is in contact with the first doping region; The cathode contact hole penetrates through the dielectric layer, is disposed corresponding to the specified region, and is in contact with the second doping region; Wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region; The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and is not less than the thickness of the dielectric layer; The anode of the temperature detection component is equipotential with the drain of the SGT component.

2. The SGT device according to claim 1, characterized in that, The temperature detection component further includes: a third doping region; the third doping region is located at the bottom of the anode contact hole, the implanted ions of the third doping region are of the same type as the implanted ions of the first doping region, and the concentration of the implanted ions of the third doping region is greater than the concentration of the implanted ions of the first doping region.

3. The SGT device according to claim 2, characterized in that, The temperature detection component further includes: a metal contact electrode, an anode electrode metal layer, and a cathode electrode metal layer; the metal contact electrode is provided in both the anode contact hole and the cathode contact hole; the anode electrode metal layer and the cathode electrode metal layer are both located above the dielectric layer, the anode electrode metal layer is disposed corresponding to the anode contact hole, and the cathode electrode metal layer is disposed corresponding to the cathode contact hole.

4. The SGT device according to claim 1, characterized in that, The temperature detection component further includes: isolation regions, and at least two isolation regions are respectively located on both sides of the region formed by the anode contact hole and the cathode contact hole.

5. The SGT device according to claim 4, characterized in that, Each isolation region includes: an isolation groove, an outer dielectric layer, and an inner dielectric layer, the outer dielectric layer is located on the bottom and side walls of the isolation groove, and the inner dielectric layer is located in the space formed by the outer dielectric layer.

6. The SGT device according to claim 1, characterized in that, Further comprising: A back metal layer, and the back metal layer is located under the epitaxial wafer.

7. A manufacturing method of an SGT device integrated with a temperature detection component, characterized in that, Including: Forming an SGT component and a temperature detection component on the epitaxial wafer; During the process of forming the temperature detection component, forming a first doping region above the epitaxial wafer, and forming a dielectric layer above the first doping region; Forming a second doping region in a specified region of the first doping region, and bringing the second doping region into contact with the dielectric layer; Forming an anode contact hole in the dielectric layer, and bringing the anode contact hole into contact with the first doping region; Forming a cathode contact hole in the dielectric layer, disposing the cathode contact hole corresponding to the specified region, and bringing the cathode contact hole into contact with the second doping region; Wherein, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region; The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doped region, and not less than the thickness of the dielectric layer; The anode of the temperature detection component is equipotential with the drain of the SGT component.

8. The manufacturing method according to claim 7, characterized in that, During the formation of the temperature detection component, it further includes: A third doped region is formed at the bottom of the anode contact hole, wherein the implanted ions of the third doped region are of the same type as the implanted ions of the first doped region, and the concentration of the implanted ions of the third doped region is greater than the concentration of the implanted ions of the first doped region.

9. The manufacturing method according to claim 8, characterized in that, During the formation of the temperature detection component, it further includes: Metal contact electrodes are disposed in both the anode contact hole and the cathode contact hole; An anode electrode metal layer and a cathode electrode metal layer are formed on the dielectric layer, wherein the anode electrode metal layer is disposed corresponding to the anode contact hole, and the cathode electrode metal layer is disposed corresponding to the cathode contact hole.

10. The manufacturing method according to claim 9, characterized in that, During the formation of the temperature detection component, it further includes: At least one isolation region is formed on each side of the two sides of the region where the anode contact hole and the cathode contact hole are formed.

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