Electron beam emission circuit and electron beam direct writing device

Abstract

The present invention provides an electron beam emission circuit and an electron beam direct writing device, comprising: M electron beam source emission modules and an electron beam source control module; M is an integer greater than or equal to 1; the electron beam source control module is used to generate N kinds of gating signals, and N is an integer greater than or equal to 2; each electron beam source emission module is respectively connected to the electron beam source control circuit; wherein any electron beam source emission module in each electron beam source emission module is turned on when receiving N kinds of gating signals at the same time, and then emits a corresponding electron beam. The present invention can solve the problems of low electron beam current intensity, insufficient graphic accuracy, insufficient direct writing efficiency, and difficulty in control existing in the existing electron direct writing technology.

Description

Technical Field

[0001] The invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to an electron beam emission circuit and an electron beam direct writing device. Background Art

[0002] The development of the semiconductor micro-processing industry has placed higher and higher demands on electron beam direct writing technology, requiring the accuracy of fine graphics imaging to be guaranteed and the direct writing speed to be greatly improved.

[0003] Specifically, in semiconductor manufacturing, the imaging of high-tech node graphics (including the graphics of photomasks and the structural graphics of each level of the device) requires not only more precise and accurate direct writing, but also high-speed direct writing when the amount of graphic data increases dramatically. From the perspective of accurate direct writing of fine graphics, on the one hand, if the image is accurate, the electron beam spot needs to be smaller for more accurate scanning. However, since the current density remains unchanged, the smaller the electron beam spot means that the current of the electron beam is reduced, resulting in a longer direct writing time. On the other hand, when the size of the graphics to be directly written is below tens of nanometers, the smaller the line width, the more significant the impact of shot noise, which seriously affects the uniformity of the critical line width and the roughness of the line edge. Based on this, in order to ensure that the critical line width uniformity and line edge roughness of small line width graphics are sufficient to meet the product performance requirements, when the graphics are directly written, the smaller the line width, the lower the sensitivity of the electron beam photoresist. As a result, the smaller the line width graphics require a larger direct writing exposure. This means that, when the current density remains unchanged, the smaller the line width, the longer the direct writing time required. In order to improve the production capacity of electron beam direct writing equipment per unit time, increasing the current density is a very effective method. However, the electron source of a general multi-electron beam direct writing machine is composed of only one electron source unit, and a source electron beam emitted from a single electron source unit is split into multiple (sometimes more than 100,000) direct writing electron beams. In order to increase the current density of the direct writing electron beam, it is necessary to increase the total current of the source electron beam. However, the adjustable increment of the total current of the source electron beam is relatively limited, and the increase in the current density of each direct writing electron beam is very limited. If the number of electron beams is directly increased, the excessive number of electron beams is not conducive to precise control.

[0004] Therefore, effectively increasing the source electron beam intensity while ensuring the direct writing graphics accuracy and direct writing efficiency has become a technical problem that needs to be solved urgently.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an electron beam emission circuit and an electron beam direct writing device to solve the problems of low electron beam current intensity, insufficient graphic accuracy, insufficient direct writing efficiency and difficult control in the prior art.

[0007] To achieve the above-mentioned object and other related objects, the present invention provides an electron beam emission circuit, comprising: M electron beam source emission modules and an electron beam source control module; M is an integer greater than or equal to 1;

[0008] The electron beam source control module is used to generate N kinds of gating signals, where N is an integer greater than or equal to 2;

[0009] Each electron beam source emission module is connected to an electron beam source control module respectively; wherein, any electron beam source emission module among the electron beam source emission modules is turned on when receiving N kinds of gating signals at the same time, and then emits the corresponding electron beam.

[0010] Optionally, the electron beam source control module includes T first control lines and L second control lines; T and L are integers greater than or equal to 1 and T×L≥M; the first control lines are cross-arranged with the second control lines, and the first control lines generate a first selection signal respectively, and the second control lines generate a second selection signal respectively; the first control end of each electron beam source emission module is respectively connected to the corresponding first control line, and the second control end is respectively connected to the corresponding second control line; any electron beam source emission module is turned on to emit the corresponding electron beam after receiving the corresponding first selection signal and the corresponding second selection signal at the same time.

[0011] Optionally, each electron beam source emission module includes a control unit and an electron beam source; the first control end of the control unit is connected to the corresponding first control line, the second control end is connected to the corresponding second control line, the output end is connected to the corresponding electron beam source, and a switching signal is provided to the corresponding electron beam source based on the received first selection signal and the second selection signal; the electron beam source receives the corresponding switching signal and emits the corresponding electron beam.

[0012] Optionally, the control unit includes a first transistor and a second transistor; the first end and the second end of the first transistor serve as the first control end and the second control end of the control unit respectively, and the third end is connected to the first end of the second transistor; the second end of the second transistor is connected to a first bias voltage, and the third end serves as the output end of the control unit.

[0013] Optionally, the electron beam source control module also includes P third control lines and Q fourth control lines; P and Q are integers greater than or equal to 1 and Q=L, P=T; each third control line generates a third selection signal respectively; each fourth control line generates a fourth selection signal respectively; each electron beam source emission module is respectively connected to the third control line and the fourth control line, and is turned on to emit the corresponding electron beam when receiving the corresponding first selection signal, the corresponding second selection signal, the corresponding third selection signal and the corresponding fourth selection signal at the same time.

[0014] Optionally, each electron beam source emission module includes a control unit and an electron beam source; the first control end of the control unit is connected to the corresponding first control line, the second control end is connected to the corresponding second control line, the third control end is connected to the corresponding third control line, the fourth control end is connected to the corresponding fourth control line, the output end is connected to the corresponding electron beam source, and a switching signal is provided to the corresponding electron beam source based on the received first selection signal, the second selection signal, the third selection signal and the fourth selection signal; the electron beam source receives the corresponding switching signal and emits the corresponding electron beam.

[0015] Optionally, the control unit includes a third transistor, a fourth transistor and a fifth transistor; the first end and the second end of the third transistor serve as the first control end and the second control end of the control unit respectively; the first end and the second end of the fourth transistor serve as the third control end and the fourth control end of the control unit respectively; the third end of the third transistor and the third end of the fourth transistor are connected; the first end of the fifth transistor is connected to the third end of the third transistor, the second end is connected to the second bias voltage, and the third end serves as the output end of the control unit.

[0016] Optionally, a first end of the electron beam source is connected to an output end of the control unit, a second end is connected to a third bias voltage, and a third end outputs the electron beam.

[0017] To achieve the above-mentioned purpose and other related purposes, the present invention provides an electron beam direct writing device, which includes an electron beam path control module and the above-mentioned electron beam emission circuit;

[0018] The electron beam path control module is used to generate a set of bias voltages for the electron beam emitted in a circular manner, so as to control the movement path of the electron beam.

[0019] Optionally, the electron beam path control module includes a first path control unit and a second path control unit; the first path control unit and the second path control unit each include a group of electrodes; each group of electrodes is arranged around the emitted electron beam; each electron beam is deflected by passing through the magnetic field generated by the first path control unit and the magnetic field generated by the second path control unit in turn, thereby reaching a preset position.

[0020] Optionally, the electron beam direct writing device also includes a master control module and a bias configuration module; the master control module is connected to the bias configuration module to generate a control signal to adjust the bias output by the bias configuration module; the bias configuration module is respectively connected to each electron beam source emission module and the electron beam source control module, and based on the electron beam source control module, it selects to turn on the corresponding electron beam source emission module to emit an electron beam, and adjusts the bias voltage in the electron beam source emission module to adjust the beam current intensity of the emitted electron beam.

[0021] As described above, the electron beam emitting circuit and the electron beam direct writing device of the present invention have the following beneficial effects:

[0022] 1. The electron beam emission circuit and electron beam direct writing device of the present invention use a plurality of electron beam sources arranged in an array, which can effectively solve the problems of insufficient electron beam intensity, low precision and low direct writing efficiency emitted by a single electron beam source.

[0023] 2. The electron beam emission circuit and the electron beam direct writing device of the present invention, by providing an electron beam source control module, enable multiple electron beam sources to work independently, thereby ensuring precise control of electron beam emission.

[0024] 3. The electron beam emission circuit and electron beam direct writing device of the present invention can independently control the switching state and intensity of each electron beam source by adjusting the magnitude of each bias voltage, and can be applied to semiconductor micro-machining. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Shown is a schematic structural diagram of the electron beam direct writing device of the present invention.

[0026] Figure 2 Shown is a structural schematic diagram of an electron beam emission circuit of the present invention.

[0027] Figure 3 Shown as the present invention Figure 2 A top view of an electron beam emission circuit.

[0028] Figure 4 Shown is a schematic structural diagram of the electron beam source of the present invention.

[0029] Figure 5 It is a schematic structural diagram of another electron beam emission circuit of the present invention.

[0030] Figure 6 Shown as the present invention Figure 5 A top view of an electron beam emission circuit.

[0031] Component number description

[0032] 1 Electron beam direct writing device

[0033] 10 Machines

[0034] 101 Wafer processing layer

[0035] 11 Electron beam emission circuit

[0036] 111 Electron beam source control module

[0037] 112 Electron beam source emission module

[0038] 112a Control unit

[0039] 112b Electron beam source

[0040] 12 Electron beam path control module

[0041] 121 First Path Control Unit

[0042] 122 Second Path Control Unit

[0043] 123 Occlusion Structure

[0044] 13 Bias Configuration Module

[0045] 14 Master control module

[0046] 21 Electron beam emission circuit

[0047] 211a Control Unit

[0048] 211b Electron beam source DETAILED DESCRIPTION

[0049] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0050] See also Figure 1 to Figure 6It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0051] Embodiment 1

[0052] like Figure 1 and Figure 2 As shown, this embodiment provides an electron beam emission circuit 11, including: M electron beam source emission modules 112 and an electron beam source control module 111; M is an integer greater than or equal to 1;

[0053] like Figure 1 and Figure 2 As shown, the electron beam source control module 111 is used to generate N types of gating signals, where N is an integer greater than or equal to 2.

[0054] Specifically, in this embodiment, the electron beam source control module 111 includes T first control lines and L second control lines; T and L are integers greater than or equal to 1 and T×L≥M. Each first control line is arranged crosswise with each second control line, and each first control line generates a first selection signal vc1, and each second control line generates a second selection signal vc2; the first control end of each electron beam source emission module 112 is connected to the corresponding first control line, and the second control end is connected to the corresponding second control line; any electron beam source emission module 112 in each electron beam source emission module 112 is turned on to emit the corresponding electron beam after receiving the corresponding first selection signal vc1 and the corresponding second selection signal vc2 at the same time.

[0055] In this embodiment, if Figure 2 As shown, the electron beam source control module 111 includes three first control lines (in this embodiment, Figure 2 They are respectively denoted as the first row line T1, the second row line T2, and the third row line T3), and three second control lines (respectively denoted as the first column line L1, the second column line L2, and the second column line L3). In this embodiment, T and L are set to be 3, so that a maximum of 9 (i.e., 3×3=9) electron beam source emission modules 112 can be controlled. In this embodiment, 9 electron beam source emission modules 112 are set. Each electron beam source emission module 112 is respectively connected to the corresponding first control line and the second control line, and then transmits a signal when the connected first control line and the second control line are both turned on. Figure 2As shown, if the first row line T1 and the first column line L1 are controlled to be in the on state, the first row line T1 provides a first selection signal vc1, and the first column line L1 provides a second selection signal vc2, so that the corresponding electron beam source emission module 112 (in this embodiment, the electron beam source emission module 112 where the first row and the first column are located) is turned on.

[0056] In this embodiment, in order to facilitate wiring, the first control lines are parallel to each other, the second control lines are parallel to each other, and the angle between the first control lines and the second control lines is a right angle.

[0057] It should be noted that in the present invention, a dot matrix array can be formed by the intersection structure between the first control line and the second control line, so that each electron beam source emission module 112 is also arranged in an array. Therefore, the more complex the intersection relationship between the first control line and the second control line, the more dot matrices can be formed. In the present invention, each electron beam source emission module 112 can be gated in at least two control dimensions (the first control line and the second control line), so as to easily control the working state of each electron beam source 112b in each electron beam source emission module 112, so that the accuracy of direct writing is improved. In addition, in this embodiment, for ease of understanding, Figure 2 The first control lines and the second control lines are respectively recorded as the first row line T1, the second row line T2, the third row line T3, the first column line L1, the second column line L2, and the second column line L3, but in fact the array formed by the first control lines and the second control lines is not limited to this embodiment.

[0058] like Figure 1 and Figure 2 As shown, each electron beam source emission module 112 is connected to the electron beam source control module 111 respectively; wherein, any electron beam source emission module 112 among the electron beam source emission modules is turned on when receiving N kinds of gating signals at the same time, and then emits the corresponding electron beam.

[0059] Specifically, Figure 3 As shown, in this embodiment, each electron beam source emission module 112 includes a control unit 112a and an electron beam source 112b; the first control end of the control unit 112a is connected to the corresponding first control line, the second control end is connected to the corresponding second control line, and the output end is connected to the corresponding electron beam source 112b, and a switching signal is provided to the corresponding electron beam source 112b based on the received first selection signal vc1 and the second selection signal vc2; the electron beam source 112b receives the corresponding switching signal and emits the corresponding electron beam.

[0060] As an example, Figure 3As shown, the control unit 112a includes a first transistor T1 and a second transistor T2; the first end and the second end of the first transistor T1 serve as the first control end and the second control end of the control unit 112a respectively, and the third end is connected to the first end of the second transistor T2; the second end of the second transistor T2 is connected to the first bias voltage VB1, and the third end serves as the output end of the control unit 112a. In this embodiment, the first selection signal vc1 is input to the first end of the first transistor T1, and the second selection signal vc2 is input to the second end of the first transistor T1, thereby turning on the first transistor T1 and providing a start voltage for the third end of the first transistor T1. The first end of the second transistor T2 receives the start voltage as the control end, thereby turning on the second transistor T2 to provide a switch signal for the electron beam source 112b.

[0061] It should be noted that, in the present embodiment, the first transistor T1 and the second transistor T2 are both tunneling transistors. In the electron beam emission circuit 11 provided in the present embodiment, due to the different changes in the voltage of each node, the temperature difference of each node will be large, which affects the accuracy and stability of the system emitting electron beams. Based on this, by setting a tunneling transistor that is insensitive to temperature, the influence of temperature on the working state of the electron beam source 112b can be effectively suppressed. In fact, the first transistor T1 and the second transistor T2 can also be set to any other type of MOS tube, BJT tube, IGBT tube, etc., and the actual connection method can be set based on the actual device used, and is not limited to the present embodiment. In addition, at least one of the transistors in the present embodiment can be provided with a charge storage function, and the threshold voltage of the transistor can be adjusted by storing charges of different sizes, so as to specifically adjust the electron beam emission performance of a single electron beam source 112b, thereby ensuring that each electron beam source 112b has a separate adjustment function. At the same time, it can ensure that the transistor can still maintain the adjusted working performance in the event of a power outage, that is, after the power is turned on again, there is no need to perform calibration configuration and the electron beam source can work normally, thereby avoiding the inconsistency of the electron beams emitted before and after due to the voltage change before and after power-on, which ultimately affects the uniformity of the sample.

[0062] It should be further explained that the on / off state of the second transistor T2 is determined by the first transistor T1, and the first transistor T1 is not directly connected to the electron beam source 112b, thereby achieving relative isolation between switch control and electron source emission, so that the disturbance signal generated by the electron beam source 112b during operation can only weakly affect the working state of the second transistor T2, but cannot affect the working state of the first transistor T1 (that is, it will not affect the electron beam source control module 111), thereby ensuring system stability.

[0063] As an example, Figure 3 and Figure 4 As shown, the first end of the electron beam source 112b is connected to the output end of the control unit 112a (receiving the switch signal), the second end (cathode) is connected to the second bias voltage VB2, and the third end (anode) outputs the electron beam. In this embodiment, the source of the electron beam source 112b is connected to the second bias voltage VB2, the gate is connected to the output end of the control unit 112a, and the drain is used as the output end. In this embodiment, the source of the electron beam source 112b is used as the cathode, and the drain of the electron beam source 112b is used as the anode, which ensures that when the electron beam source 112b is turned on, the electrons have a higher energy to transition after voltage charging, thereby emitting an electron beam. In this embodiment, the electron beam source 112b that is not simultaneously selected by the first control signal vc1 and the second control signal vc2 remains in a closed state. In another embodiment, the electron beam source 112b that is not simultaneously selected by the first control signal vc1 and the second control signal vc2 maintains a stable electron beam emission intensity and continues to emit. The present invention introduces an electron beam source control module 111, which can achieve stable output of control signals and effectively improve the use efficiency of the electron beam. When continuous direct writing is required, the electron beam can remain stably turned on, achieving a duty cycle of nearly 100% of the on state, effectively improving the direct writing rate.

[0064] It should be noted that, in another example, the gate of the electron beam source 112b can be connected to the second bias voltage VB2, and the source can be connected to the output end of the control unit 112a, so as to achieve stable emission of the electron beam. In this embodiment, the potential of the second bias voltage VB2 can be set to a common bias potential provided by a common electrode, or a special bias potential provided by a bias circuit. In this embodiment, the magnitude of the bias voltage can also be adjusted based on the bias configuration module 13 to regulate the beam current intensity of the emitted electron beam. In addition, the anode in this embodiment can be partially prepared on the electron beam source 112b, or it can be an independent component structure, or it can be composed of the anode structure on the electron beam source 112b and an external independent anode structure component; based on this, the anode can be a single-layer structure or a composite layer structure, and voltages of different strengths can be applied to each layer of the anode structure.

[0065] It should be further explained that the M electron beam source emission modules 112 and the electron beam source control module 111 can be prepared on the same wafer substrate, or can be combined together in a 3D packaging integration manner at a later stage, and are not limited to this embodiment. In addition, in this embodiment, the second transistor T2 and the bias circuit of the provided second bias voltage VB2 are respectively connected to the two ends of the electron beam source 112b, thereby achieving that the switch control of the electron beam source 112b and the beam intensity control of the electron beam source 112b can be set separately, thereby ensuring that the bias circuit can provide a stable working bias voltage or a stable constant working current for the electron source without being affected by the second transistor T2, thereby avoiding the working state of the electron beam source being affected by the performance fluctuation of the second transistor.

[0066] like Figure 1 As shown, this embodiment further provides an electron beam direct writing device 1, comprising an electron beam path control module 12 and the electron beam emission circuit 11.

[0067] Specifically, the electron beam path control module 12 is used to generate a set of bias voltages for the electron beam emitted in a circular manner, so as to control the movement path of the electron beam.

[0068] As an example, the electron beam path control module 12 includes a first path control unit 121 and a second path control unit 122. The first path control unit 121 and the second path control unit 122 each include a group of electrodes; each group of electrodes is respectively arranged around the emitted electron beam. By adjusting the bias voltage on each group of electrodes, the magnetic field generated by each group of electrodes is regulated. Each electron beam is deflected by the magnetic field generated by the first path control unit 121 and the magnetic field generated by the second path control unit 122 in turn, thereby reaching a preset position. Among them, the first path control unit 121 can be used to deflect the movement path of the electron beam greatly, and the second path control unit 122 is used to deflect the movement path of the electron beam slightly, thereby more accurately controlling the position reached by the electron beam. In this embodiment, the emitted electron beam finally reaches the wafer processing layer 101 arranged on the upper surface of the machine 10. The wafer processing layer 101 can be set as a pattern processing mask layer or a wafer substrate. In this embodiment, by adjusting the voltage on each electrode in the first path control unit 121 and the second path control unit 122 , the electron beams emitted by each electron beam source 112 b are controlled to reach a preset position of the machine 10 , thereby controlling the pattern direct writing.

[0069] In this embodiment, a shielding structure 123 is further provided between the first path control unit 121 and the second path control unit 122. The shielding structure 123 is a shielding plate provided with a gap, and the intermittent position is provided at a preset path position after the electron beam passes through the first path control unit 121. The shielding plate is used to shield the redundant electron beams and the electron beams that do not conform to the preset path, thereby controlling the number and movement angle of the electron beams entering the second path control unit 122.

[0070] It should be noted that the first path control unit 121 and the second path control unit 122 may also be provided with magnetic coils, and the magnetic coils are provided outside the electron beam, thereby ensuring that the direction of the magnetic field generated by the magnetic coils can act on the movement path of the electron beam. In fact, the configuration of the first path control unit 121 and the second path control unit 122 is not limited to this embodiment, and any configuration that can control the movement path of the electron beam is within the protection scope of this embodiment.

[0071] Specifically, the electron beam direct writing device 1 also includes a master control module 14 and a bias configuration module 13. The master control module 14 is connected to the bias configuration module 13, and is used to generate a control signal to adjust the bias output by the bias configuration module 13; the bias configuration module 13 is respectively connected to each electron beam source emission module 112 and the electron beam source control module 111, and based on the electron beam source control module 111, the corresponding electron beam source emission module 112 is selected to be turned on to emit an electron beam, and the bias voltage in the electron beam source emission module 112 (in this embodiment, the first bias voltage VB1) is adjusted to adjust the beam current intensity of the emitted electron beam. The graphics to be drawn are parsed by the master control module 14 (such as a computer control terminal), and converted into control signals, thereby controlling other components in the electron beam direct writing device 1 to perform direct writing.

[0072] This embodiment performs gating control through the electron beam source control module 111, and divides the electron beam source control module 111 into two types of control lines, thereby reducing the connection density and wiring difficulty of each electron beam source emission module 112, and also reducing the computing power requirements of the master control module 14 (computer control end), which is easier to implement in equipment manufacturing. At the same time, this embodiment configures an independent control circuit for each electron beam source 112b, which can keep the electron beam source 112b in a stable working state and achieve high-efficiency direct writing.

[0073] Embodiment 2

[0074] like Figure 5 As shown, this embodiment provides an electron beam emission circuit 21, which is basically the same as the first embodiment, except that the gating signal required by the electron beam source control module in this embodiment is different.

[0075] Specifically, Figure 5 and Figure 6 As shown, the electron beam source control module also includes P third control lines (recorded as P1 in this embodiment) and Q fourth control lines (recorded as Q1 in this embodiment); P and Q are integers greater than or equal to 1 and Q=L, P=T; each third control line generates a third selection signal vc3, and each fourth control line generates a fourth selection signal vc4; the third control end of each electron beam source emission module 211 is respectively connected to the corresponding third control line, and the fourth control end is respectively connected to the corresponding fourth control line; each electron beam source emission module 211 is respectively connected to the third control line and the fourth control line, and is turned on to emit the corresponding electron beam when receiving the corresponding first selection signal vc1, the corresponding second selection signal vc2, the corresponding third selection signal vc3 and the corresponding fourth selection signal vc4 at the same time.

[0076] As an example, the first control lines are parallel to each other, the second control lines are parallel to each other, the third control lines are parallel to the first control lines, and the fourth control lines are parallel to the second control lines. In this embodiment, for ease of arrangement, the angle between the first control line and the second control line is a right angle.

[0077] As a further example, Figure 5 and Figure 6 As shown, each electron beam source emission module 211 includes a control unit 211a and an electron beam source 211b; the first control end of the control unit 211a is connected to the corresponding first control line, the second control end is connected to the corresponding second control line, the third control end is connected to the corresponding third control line, the fourth control end is connected to the corresponding fourth control line, the output end is connected to the corresponding electron beam source 211b, and a switching signal is provided to the corresponding electron beam source 211b based on the received first selection signal vc1, the second selection signal vc2, the third selection signal vc3 and the fourth selection signal vc4; the electron beam source 211b receives the corresponding switching signal and emits the corresponding electron beam.

[0078] In this embodiment, if Figure 6As shown, the control unit 211a includes a third transistor T3, a fourth transistor T4 and a fifth transistor T5; the first end and the second end of the third transistor T3 serve as the first control end and the second control end of the control unit 211a respectively; the first end and the second end of the fourth transistor T4 serve as the third control end and the fourth control end of the control unit 211a respectively; the third end of the third transistor T3 and the third end of the fourth transistor T4 are connected; the first end of the fifth transistor T5 is connected to the third end of the third transistor T3, the second end is connected to the second bias voltage VB3, and the third end serves as the output end of the control unit 211a.

[0079] It should be noted that, in the present embodiment, the third transistor T3, the fourth transistor T4 and the fifth transistor T5 are all tunneling transistors, which can effectively suppress the influence of temperature on the working state of the electron beam source 112b. In fact, the third transistor T3, the fourth transistor T4 and the fifth transistor T5 can also be set to any other type of MOS tube, BJT tube, IGBT tube, etc., and the actual connection method can be set based on the device actually used, and is not limited to the present embodiment. In addition, at least one of the transistors in the present embodiment can be provided with a charge storage function, and the threshold voltage of the transistor can be adjusted by storing charges of different sizes, so as to specifically adjust the electron beam emission performance of a single electron beam source 112b, thereby ensuring that each electron beam source 112b has a separate adjustment function. At the same time, it can ensure that the transistor can still maintain the adjusted working performance in the case of power failure.

[0080] This embodiment also provides an electron beam direct writing device (not shown in the figure), which is basically the same as the electron beam direct writing device 1 provided in the first embodiment, except for the electron beam source control module, which will not be described in detail here.

[0081] In summary, the present invention provides an electron beam emission circuit and an electron beam direct writing device, including: M electron beam source emission modules and an electron beam source control module; M is an integer greater than or equal to 1; the electron beam source control module is used to generate N kinds of gating signals, and N is an integer greater than or equal to 2; each electron beam source emission module is respectively connected to the electron beam source control module; wherein, any electron beam source emission module in each electron beam source emission module is turned on when receiving N kinds of gating signals at the same time, and then emits the corresponding electron beam. The present invention can solve the problems of low electron beam current intensity, insufficient graphic accuracy, insufficient direct writing efficiency, and difficulty in control existing in the existing electron direct writing technology. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0082] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An electron beam emitting circuit, characterized in that: The electron beam emission circuit comprises: M electron beam source emission modules and an electron beam source control module; M is an integer greater than or equal to 1; The electron beam source control module is used to generate N kinds of gating signals, where N is an integer greater than or equal to 2; Each electron beam source emission module is connected to an electron beam source control module respectively; wherein any electron beam source emission module among the electron beam source emission modules is turned on when receiving N kinds of gating signals at the same time, thereby emitting a corresponding electron beam; The electron beam source control module includes T first control lines and L second control lines; T and L are integers greater than or equal to 1 and T×L≥M; Each first control line is cross-arranged with each second control line, and each first control line generates a first selection signal, and each second control line generates a second selection signal; The first control end of each electron beam source emission module is respectively connected to the corresponding first control line, and the second control end is respectively connected to the corresponding second control line; any electron beam source emission module is turned on to emit the corresponding electron beam after receiving the corresponding first gating signal and the corresponding second gating signal at the same time; Each electron beam source emission module includes a control unit and an electron beam source; The control unit has a first control terminal connected to a corresponding first control line, a second control terminal connected to a corresponding second control line, an output terminal connected to a corresponding electron beam source, and provides a switch signal to the corresponding electron beam source based on the received first gating signal and the second gating signal; The electron beam source receives a corresponding switch signal and emits a corresponding electron beam; The switch control is relatively isolated from the electron beam source, so that the disturbance signal generated by the electron beam source during operation cannot affect the electron beam source control circuit.

2. The electron beam emitting circuit according to claim 1, characterized in that: The control unit includes a first transistor and a second transistor; The first end and the second end of the first transistor serve as the first control end and the second control end of the control unit respectively, and the third end is connected to the first end of the second transistor; The second end of the second transistor is connected to the first bias voltage, and the third end serves as the output end of the control unit.

3. The electron beam emitting circuit according to claim 1, characterized in that: The electron beam source control module further includes P third control lines and Q fourth control lines; P and Q are integers greater than or equal to 1, and Q=L and P=T; Each third control line generates a third selection signal; each fourth control line generates a fourth selection signal; Each electron beam source emission module is connected to the third control line and the fourth control line respectively, and is turned on to emit a corresponding electron beam when receiving a corresponding first selection signal, a corresponding second selection signal, a corresponding third selection signal and a corresponding fourth selection signal at the same time.

4. The electron beam emitting circuit according to claim 3, characterized in that: Each electron beam source emission module includes a control unit and an electron beam source; The first control end of the control unit is connected to the corresponding first control line, the second control end is connected to the corresponding second control line, the third control end is connected to the corresponding third control line, and the fourth control end is connected to the corresponding fourth control line, and the output end is connected to the corresponding electron beam source, and a switch signal is provided to the corresponding electron beam source based on the received first selection signal, the second selection signal, the third selection signal, and the fourth selection signal; The electron beam source receives a corresponding switch signal and emits a corresponding electron beam.

5. The electron beam emitting circuit according to claim 4, characterized in that: The control unit includes a third transistor, a fourth transistor and a fifth transistor; The first end and the second end of the third transistor serve as the first control end and the second control end of the control unit respectively; The first end and the second end of the fourth transistor serve as the third control end and the fourth control end of the control unit respectively; The third end of the third transistor and the third end of the fourth transistor are connected; The first end of the fifth transistor is connected to the third end of the third transistor, the second end is connected to the second bias voltage, and the third end serves as the output end of the control unit.

6. The electron beam emitting circuit according to claim 1 or 4, characterized in that: The first end of the electron beam source is connected to the output end of the control unit, the second end is connected to the third bias voltage, and the third end outputs the electron beam.

7. An electron beam direct writing device, characterized in that: The electron beam direct writing device comprises an electron beam path control module and an electron beam emission circuit according to any one of claims 1 to 6; The electron beam path control module is used to generate a set of bias voltages for the electron beam emitted in a circular manner, so as to control the movement path of the electron beam.

8. The electron beam direct writing device according to claim 7, characterized in that: The electron beam path control module includes a first path control unit and a second path control unit; The first path regulating unit and the second path regulating unit each include a group of electrodes; each group of electrodes is arranged around the emitted electron beam; Each electron beam is deflected by passing through the magnetic field generated by the first path regulating unit and the magnetic field generated by the second path regulating unit in sequence, thereby reaching a preset position.

9. The electron beam direct writing device according to claim 7, characterized in that: The electron beam direct writing device also includes a master control module and a bias configuration module; The master control module is connected to the bias configuration module and is used to generate a control signal to adjust the bias output by the bias configuration module; The bias configuration module is respectively connected to each electron beam source emission module and the electron beam source control module, and based on the electron beam source control module, it selects to turn on the corresponding electron beam source emission module to emit an electron beam, and adjusts the bias voltage in the electron beam source emission module to control the beam current intensity of the emitted electron beam.

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