Integrated circuit design method and system

Abstract

The present invention relates to the field of semiconductor device technology, and in particular to a design method and system for integrated circuits. The method comprises the following steps: obtaining a quantum dot semiconductor material data set of an integrated circuit and performing electronic transmission performance screening and electronic arraying to obtain a quantum dot semiconductor material electronic array; performing quantum dot heterogeneous integration design and quantum dot tunneling interconnection according to the quantum dot semiconductor material electronic array to obtain a quantum dot interconnection network; performing electronic energy band regulation analysis and intelligent integrated circuit design on the quantum dot interconnection network to obtain an intelligent quantum dot integrated circuit; obtaining integrated circuit real-time environmental data and integrated circuit user demand data; performing circuit operation optimization design on the intelligent quantum dot integrated circuit based on the integrated circuit real-time environmental data and integrated circuit user demand data to obtain a quantum dot integrated optimized circuit. The present invention can improve the design of integrated circuits with superior heterogeneous performance.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a design method and system for integrated circuits. Background Art

[0002] As the demand for information processing continues to grow, the demand for performance and energy efficiency in integrated circuit design is also increasing. Improving circuit performance, reducing power consumption and increasing integration have become important goals in integrated circuit design. However, traditional integrated circuit design methods still have some problems. Due to the limitations of device microscopic size and electronic band structure, it is difficult to meet the increasingly complex and diverse application scenarios. Summary of the invention

[0003] Based on this, it is necessary for the present invention to provide a design method and system for an integrated circuit to solve at least one of the above technical problems.

[0004] To achieve the above object, a method for designing an integrated circuit comprises the following steps:

[0005] Step S1: obtaining a quantum dot semiconductor material data set of an integrated circuit, and performing electronic transmission performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a data set of materials with excellent quantum dot transmission performance; performing electronic arraying on the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials;

[0006] Step S2: performing quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integration network; performing quantum dot tunneling interconnection on the quantum dot heterogeneous integration network to obtain a quantum dot interconnection network;

[0007] Step S3: performing electronic energy band regulation analysis on the quantum dot interconnection network to obtain quantum dot electronic energy band structure data; performing intelligent integrated circuit design on the quantum dot interconnection network based on the quantum dot electronic energy band structure data to obtain an intelligent quantum dot integrated circuit;

[0008] Step S4: Acquire the real-time environment data of the integrated circuit and the user demand data of the integrated circuit; optimize the circuit operation design of the smart quantum dot integrated circuit based on the real-time environment data of the integrated circuit and the user demand data of the integrated circuit to obtain a quantum dot integrated optimized circuit.

[0009] The present invention first obtains a quantum dot semiconductor material data set for an integrated circuit. Such a data set covers the properties and performance information of various semiconductor materials of the integrated circuit, and can lay a solid data foundation for the subsequent analysis process. At the same time, by screening the obtained quantum dot semiconductor material data set for the integrated circuit for electronic transmission performance, it is possible to screen out semiconductor materials that perform well in quantum dot transmission based on the electronic transmission characteristics. Subsequently, by electronically arraying the data set of materials with excellent quantum dot transmission performance, quantum dot semiconductor materials with excellent performance can be organically organized into an electronic array. The key to this step is that it can achieve further integration and organization of the selected materials, thereby providing high-quality basic materials for the subsequent quantum dot heterogeneous integration design. Secondly, by using the quantum dot semiconductor material electronic array to perform quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit, it is possible to fully utilize the heterogeneous properties of quantum dots and stack them three-dimensionally in the integrated circuit, thereby forming a quantum dot heterogeneous integration network. This design is based on the excellent material electronic array and integrates quantum dot heterogeneity into a network structure. In addition, by performing quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network, connections can be established between these quantum dots, thus forming a quantum dot interconnection network. This interconnection method helps to improve the connection efficiency and speed between the various components in the integrated circuit. The key to this step is that it can improve the overall performance of the integrated circuit, reduce power consumption, and give full play to the potential advantages of quantum dots. Then, by performing electronic band regulation analysis on the quantum dot interconnection network, this analysis process helps to understand the structure of the electronic bands in the quantum dot interconnection network, that is, the relationship and distribution between different bands. Through this step, the quantum dot interconnection network can be adjusted more deeply to achieve a more accurate electronic band structure design. In addition, by performing intelligent integrated circuit design on the quantum dot interconnection network based on the acquired quantum dot electronic band structure data, the purpose of this step is to make full use of the information obtained from the previous analysis to realize the intelligent integrated design of the quantum dot interconnection network. Through this design process, it is aimed to realize the intelligent optimization of the quantum dot interconnection network, thereby producing a more efficient and intelligent quantum dot integrated circuit. Finally, the circuit operation is optimized based on real-time environmental data and user demand data, which are key information obtained from the actual operating environment and user perspective. By comprehensively considering these data, the design of smart quantum dot integrated circuits is optimized, aiming to enable quantum dot integrated circuits to better adapt to different environments and user needs in actual operation, improve their performance and practical value, and thus meet increasingly complex and diverse application scenarios.

[0010] Preferably, the present invention further provides an integrated circuit design system for executing the integrated circuit design method as described above, the integrated circuit design system comprising:

[0011] The quantum dot semiconductor material data processing module is used to obtain the quantum dot semiconductor material data set of the integrated circuit, and perform electronic transmission performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a data set of materials with excellent quantum dot transmission performance; and perform electronic arraying on the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials;

[0012] A quantum dot heterogeneous network integrated interconnection module is used to perform quantum dot heterogeneous integration design on a quantum dot semiconductor material data set of an integrated circuit according to a quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integrated network; and to perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network to obtain a quantum dot interconnected network;

[0013] The intelligent integrated circuit design module is used to analyze the electronic energy band regulation of the quantum dot interconnection network to obtain the electronic energy band structure data of the quantum dot; based on the electronic energy band structure data of the quantum dot, the intelligent integrated circuit design of the quantum dot interconnection network is performed to obtain an intelligent quantum dot integrated circuit;

[0014] The integrated circuit operation optimization module is used to obtain the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit; based on the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit, the circuit operation optimization design of the smart quantum dot integrated circuit is performed to obtain the quantum dot integrated optimized circuit.

[0015] In summary, the present invention provides an integrated circuit design system, which consists of a quantum dot semiconductor material data processing module, a quantum dot heterogeneous network integrated interconnection module, an intelligent integrated circuit design module, and an integrated circuit operation optimization module. It can realize any integrated circuit design method described in the present invention, and is used to realize an integrated circuit design method by combining the operations between computer programs running on each module. The internal structure of the system cooperates with each other. By introducing quantum dot technology, it is possible to achieve a high degree of controllability of the electronic band structure of the integrated circuit at a microscopic scale, thereby breaking through the limitations of traditional integrated circuit design. Secondly, by heterogeneously integrating and interconnecting quantum dots, adaptive heterogeneous integrated circuit design at a microscopic scale can be achieved, thereby promoting the frontier of integrated circuit design. At the same time, the dynamic adjustment of circuit performance is also achieved by regulating the electronic band structure, thereby adapting to different workloads and environmental conditions, and optimizing the operating state of the integrated circuit according to the real-time environment and user needs, improving the adaptability and flexibility of the integrated circuit, which can greatly reduce duplication of work and manpower investment, and can quickly and effectively provide a more accurate and efficient integrated circuit design process, thereby simplifying the operation process of the integrated circuit design system. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments thereof made with reference to the following drawings:

[0017] Figure 1 A schematic flow chart of the steps of the integrated circuit design method of the present invention;

[0018] Figure 2 for Figure 1 Detailed step flow diagram of step S1;

[0019] Figure 3 for Figure 2 Detailed step flow chart of step S13 in FIG. DETAILED DESCRIPTION

[0020] The following is a clear and complete description of the technical method of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In addition, the accompanying drawings are only schematic illustrations of the present invention and are not necessarily drawn to scale. The same reference numerals in the figures represent the same or similar parts, and their repeated description will be omitted. Some of the block diagrams shown in the accompanying drawings are functional entities and do not necessarily correspond to physically or logically independent entities. The functional entities can be implemented in software form, or implemented in one or more hardware modules or integrated circuits, or implemented in different networks and / or processor methods and / or microcontroller methods.

[0022] It should be understood that, although the terms "first", "second", etc. may be used herein to describe various units, these units should not be limited by these terms. These terms are used only to distinguish one unit from another unit. For example, without departing from the scope of the exemplary embodiments, the first unit may be referred to as the second unit, and similarly the second unit may be referred to as the first unit. The term "and / or" used herein includes any and all combinations of one or more of the listed associated items.

[0023] To achieve this, please refer to Figures 1 to 3 The present invention provides a method for designing an integrated circuit, the method comprising the following steps:

[0024] Step S1: obtaining a quantum dot semiconductor material data set of an integrated circuit, and performing electronic transmission performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a data set of materials with excellent quantum dot transmission performance; performing electronic arraying on the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials;

[0025] Step S2: performing quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integration network; performing quantum dot tunneling interconnection on the quantum dot heterogeneous integration network to obtain a quantum dot interconnection network;

[0026] Step S3: performing electronic energy band regulation analysis on the quantum dot interconnection network to obtain quantum dot electronic energy band structure data; performing intelligent integrated circuit design on the quantum dot interconnection network based on the quantum dot electronic energy band structure data to obtain an intelligent quantum dot integrated circuit;

[0027] Step S4: Acquire the real-time environment data of the integrated circuit and the user demand data of the integrated circuit; optimize the circuit operation design of the smart quantum dot integrated circuit based on the real-time environment data of the integrated circuit and the user demand data of the integrated circuit to obtain a quantum dot integrated optimized circuit.

[0028] In the embodiment of the present invention, please refer to Figure 1 FIG. 1 is a schematic flow chart of the steps of the integrated circuit design method of the present invention. In this example, the steps of the integrated circuit design method include:

[0029] Step S1: obtaining a quantum dot semiconductor material data set of an integrated circuit, and performing electronic transmission performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a data set of materials with excellent quantum dot transmission performance; performing electronic arraying on the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials;

[0030] The embodiment of the present invention obtains data on quantum dot semiconductor materials (such as phosphine and gallium nitride) in an integrated circuit, including the properties and performance information data of various semiconductor materials of the integrated circuit, thereby obtaining a quantum dot semiconductor material data set of the integrated circuit. Secondly, the quantum dot semiconductor material data set of the integrated circuit is subjected to abnormal filtering processing to effectively eliminate noise and abnormal fluctuations at different frequencies, and the quantum dot semiconductor material data set of the integrated circuit is screened by using a preset screening standard for electronic transmission performance, so as to select the most potential quantum dot semiconductor material information data in a more targeted manner, thereby obtaining a quantum dot transmission performance excellent material data set. Then, the quantum dot transmission performance excellent material data set is analyzed, and the quantum dot semiconductor materials in the quantum dot transmission performance excellent material data set are processed using operations such as arrangement, configuration or assembly according to the analysis results, so as to organically organize the quantum dot semiconductor materials with excellent performance into an electronic array, and finally obtain a quantum dot semiconductor material electronic array.

[0031] Step S2: performing quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integration network; performing quantum dot tunneling interconnection on the quantum dot heterogeneous integration network to obtain a quantum dot interconnection network;

[0032] The embodiment of the present invention analyzes the electronic array of quantum dot semiconductor materials by using an appropriate topological analysis method to analyze the distribution relationship and topological relationship between the electronic arrays of quantum dot semiconductor materials, and then constructs the corresponding quantum dot semiconductor materials in the quantum dot semiconductor material data set of the integrated circuit according to the analysis results, and stacks them three-dimensionally into a more compact and efficient network structure, thereby obtaining a quantum dot heterogeneous integrated network. Finally, the quantum dot heterogeneous integrated network is interconnected by using the quantum tunneling effect according to the quantum properties of the quantum dots to determine the tunneling path of the quantum dots in the network and a faster and lower-energy interconnection method, and ensure that the quantum dot heterogeneous integrated network can work effectively under the quantum tunneling effect, and finally obtain a quantum dot interconnected network.

[0033] Step S3: performing electronic energy band regulation analysis on the quantum dot interconnection network to obtain quantum dot electronic energy band structure data; performing intelligent integrated circuit design on the quantum dot interconnection network based on the quantum dot electronic energy band structure data to obtain an intelligent quantum dot integrated circuit;

[0034] The embodiment of the present invention uses spectral technology, electrical testing or numerical simulation to analyze the electronic situation in the quantum dot interconnection network, so as to deeply study the electronic structure of the quantum dot interconnection network, reveal the energy level distribution of electrons in quantum dots, and regulate and analyze the quantum dot interconnection network according to the band gap of the corresponding network electrons, so as to analyze and regulate the structure of the electronic energy bands in the quantum dot interconnection network, that is, the relationship and distribution between different energy bands, so as to obtain quantum dot electronic energy band structure data. Finally, the quantum dot interconnection network is integratedly designed by using the electronic energy band structure information in the quantum dot electronic energy band structure data, including selecting the circuit device type, circuit topology, layout design and other integrated processing, and verifying the performance and stability of the integrated circuit, and finally obtaining a smart quantum dot integrated circuit.

[0035] Step S4: Acquire the real-time environment data of the integrated circuit and the user demand data of the integrated circuit; optimize the circuit operation design of the smart quantum dot integrated circuit based on the real-time environment data of the integrated circuit and the user demand data of the integrated circuit to obtain a quantum dot integrated optimized circuit.

[0036] The embodiment of the present invention collects real-time data of the environment around the integrated circuit by using sensors, monitoring equipment or other related environmental monitoring technologies, including data on temperature, humidity, electromagnetic interference, etc., and collects and obtains the demand data of the integrated circuit user through surveys, user feedback, market research or other user demand data collection methods, including data on performance requirements, power consumption requirements, reliability requirements, etc., so as to obtain the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit. Secondly, the collected real-time environmental data of the integrated circuit and the user demand data of the integrated circuit are cleaned, calibrated and preprocessed to ensure the accuracy and consistency of the data. Then, by using statistical analysis, model building and other methods, the impact factors of the processed real-time environmental data of the integrated circuit and the user demand data of the integrated circuit on the operation of the smart quantum dot integrated circuit are evaluated, and the impact factors obtained by the evaluation are weighed and analyzed to determine the priority and correlation of different impact factors, so as to optimize the design of the smart quantum dot integrated circuit, including improving the circuit topology, material selection, optimizing power consumption and performance, etc., and finally obtaining the quantum dot integrated optimization circuit.

[0037] The present invention first obtains a quantum dot semiconductor material data set for an integrated circuit. Such a data set covers the properties and performance information of various semiconductor materials of the integrated circuit, and can lay a solid data foundation for the subsequent analysis process. At the same time, by screening the obtained quantum dot semiconductor material data set for the integrated circuit for electronic transmission performance, it is possible to screen out semiconductor materials that perform well in quantum dot transmission based on the electronic transmission characteristics. Subsequently, by electronically arraying the data set of materials with excellent quantum dot transmission performance, quantum dot semiconductor materials with excellent performance can be organically organized into an electronic array. The key to this step is that it can achieve further integration and organization of the selected materials, thereby providing high-quality basic materials for the subsequent quantum dot heterogeneous integration design. Secondly, by using the quantum dot semiconductor material electronic array to perform quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit, it is possible to fully utilize the heterogeneous properties of quantum dots and stack them three-dimensionally in the integrated circuit, thereby forming a quantum dot heterogeneous integration network. This design is based on the excellent material electronic array and integrates quantum dot heterogeneity into a network structure. In addition, by performing quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network, connections can be established between these quantum dots, thus forming a quantum dot interconnection network. This interconnection method helps to improve the connection efficiency and speed between the various components in the integrated circuit. The key to this step is that it can improve the overall performance of the integrated circuit, reduce power consumption, and give full play to the potential advantages of quantum dots. Then, by performing electronic band regulation analysis on the quantum dot interconnection network, this analysis process helps to understand the structure of the electronic bands in the quantum dot interconnection network, that is, the relationship and distribution between different bands. Through this step, the quantum dot interconnection network can be adjusted more deeply to achieve a more accurate electronic band structure design. In addition, by performing intelligent integrated circuit design on the quantum dot interconnection network based on the acquired quantum dot electronic band structure data, the purpose of this step is to make full use of the information obtained from the previous analysis to realize the intelligent integrated design of the quantum dot interconnection network. Through this design process, it is aimed to realize the intelligent optimization of the quantum dot interconnection network, thereby producing a more efficient and intelligent quantum dot integrated circuit. Finally, the circuit operation is optimized based on real-time environmental data and user demand data, which are key information obtained from the actual operating environment and user perspective. By comprehensively considering these data, the design of smart quantum dot integrated circuits is optimized, aiming to enable quantum dot integrated circuits to better adapt to different environments and user needs in actual operation, improve their performance and practical value, and thus meet increasingly complex and diverse application scenarios.

[0038] Preferably, step S1 comprises the following steps:

[0039] Step S11: Acquire a quantum dot semiconductor material data set of an integrated circuit;

[0040] Step S12: performing anomaly detection on the quantum dot semiconductor material data set of the integrated circuit to obtain abnormal data of the quantum dot semiconductor material of the integrated circuit;

[0041] Step S13: using an abnormality calculation formula to perform abnormality calculation on the abnormal data of the integrated circuit quantum dot semiconductor material to obtain an abnormality value of the quantum dot semiconductor material;

[0042] Step S14: comparing and judging the abnormality value of the quantum dot semiconductor material according to the preset abnormality threshold, when the abnormality value of the quantum dot semiconductor material is greater than or equal to the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the high-frequency abnormal data of the quantum dot semiconductor material; when the abnormality value of the quantum dot semiconductor material is less than the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the low-frequency abnormal data of the quantum dot semiconductor material;

[0043] Step S15: using a deep joint filtering algorithm to perform joint filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material high-frequency abnormal data to obtain quantum dot semiconductor material high-frequency abnormal filtered data; using a local filtering algorithm to perform local filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material low-frequency abnormal data to obtain quantum dot semiconductor material low-frequency abnormal filtered data;

[0044] Step S16: merging the quantum dot semiconductor material high frequency abnormal filtering data and the quantum dot semiconductor material low frequency abnormal filtering data to obtain a quantum dot semiconductor material abnormal filtering data set;

[0045] Step S17: screening the quantum dot semiconductor material abnormal filtering data set for electronic transmission performance to obtain a quantum dot semiconductor material data set with excellent transmission performance;

[0046] Step S18: electronically arraying the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials.

[0047] As an embodiment of the present invention, refer to Figure 2 As shown, Figure 1 Detailed step flow diagram of step S1 in FIG. 1 , in this embodiment, step S1 includes the following steps:

[0048] Step S11: Acquire a quantum dot semiconductor material data set of an integrated circuit;

[0049] The embodiment of the present invention obtains data on quantum dot semiconductor materials (such as niobium phosphide and gallium nitride) in the integrated circuit, including property and performance information data of various semiconductor materials of the integrated circuit, and finally obtains a quantum dot semiconductor material data set of the integrated circuit.

[0050] Step S12: performing anomaly detection on the quantum dot semiconductor material data set of the integrated circuit to obtain abnormal data of the quantum dot semiconductor material of the integrated circuit;

[0051] The embodiment of the present invention detects the quantum dot semiconductor material data set of the integrated circuit by using an anomaly detection method (for example, based on statistics, machine learning, etc.) to identify and extract abnormal data in the quantum dot semiconductor material data set of the integrated circuit, and finally obtains the abnormal data of the quantum dot semiconductor material of the integrated circuit.

[0052] Step S13: using an abnormality calculation formula to perform abnormality calculation on the abnormal data of the integrated circuit quantum dot semiconductor material to obtain an abnormality value of the quantum dot semiconductor material;

[0053] The embodiment of the present invention combines the time variable parameter, the number of abnormal data features, the measured value of the abnormal data features, the abnormal weight adjustment parameter, the abnormal distribution mean, the abnormal distribution standard deviation, the abnormal distribution power index, the number of abnormal dynamic features, the measured value of the abnormal dynamic features, the dynamic attenuation index and related parameters to form a suitable abnormal degree calculation formula to perform abnormal calculation on the abnormal data of the integrated circuit quantum dot semiconductor material to quantify the abnormal situation of the abnormal data, and finally obtain the abnormal degree value of the quantum dot semiconductor material. In addition, the abnormal degree calculation formula can also use any abnormal degree detection algorithm in the field to replace the abnormal calculation process, and is not limited to the abnormal degree calculation formula.

[0054] Step S14: comparing and judging the abnormality value of the quantum dot semiconductor material according to the preset abnormality threshold, when the abnormality value of the quantum dot semiconductor material is greater than or equal to the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the high-frequency abnormal data of the quantum dot semiconductor material; when the abnormality value of the quantum dot semiconductor material is less than the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the low-frequency abnormal data of the quantum dot semiconductor material;

[0055] The embodiment of the present invention compares and judges the calculated quantum dot semiconductor material abnormality value by using a preset abnormality threshold. If the quantum dot semiconductor material abnormality value is greater than or equal to the preset abnormality threshold, it means that the abnormality of the integrated circuit quantum dot semiconductor material abnormal data corresponding to the quantum dot semiconductor material abnormality value is relatively large, and the integrated circuit quantum dot semiconductor material abnormal data corresponding to the quantum dot semiconductor material abnormality value is marked as quantum dot semiconductor material high-frequency abnormal data; if the quantum dot semiconductor material abnormality value is less than the preset abnormality threshold, it means that the abnormality of the integrated circuit quantum dot semiconductor material abnormal data corresponding to the quantum dot semiconductor material abnormality value is relatively small, and the integrated circuit quantum dot semiconductor material abnormal data corresponding to the quantum dot semiconductor material abnormality value is marked as quantum dot semiconductor material low-frequency abnormal data.

[0056] Step S15: using a deep joint filtering algorithm to perform joint filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material high-frequency abnormal data to obtain quantum dot semiconductor material high-frequency abnormal filtered data; using a local filtering algorithm to perform local filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material low-frequency abnormal data to obtain quantum dot semiconductor material low-frequency abnormal filtered data;

[0057] The embodiment of the present invention processes the integrated circuit quantum dot semiconductor material abnormal data marked as high-frequency abnormal data of quantum dot semiconductor materials by using a deep joint filtering algorithm to effectively eliminate the noise and abnormal fluctuations at a deeper level at high frequencies, thereby obtaining the quantum dot semiconductor material high-frequency abnormal filtered data. Then, the integrated circuit quantum dot semiconductor material abnormal data marked as low-frequency abnormal data of quantum dot semiconductor materials is processed by using a local filtering algorithm to effectively eliminate the local noise and abnormal fluctuations at low frequencies, thereby obtaining the quantum dot semiconductor material low-frequency abnormal filtered data.

[0058] Step S16: merging the quantum dot semiconductor material high frequency abnormal filtering data and the quantum dot semiconductor material low frequency abnormal filtering data to obtain a quantum dot semiconductor material abnormal filtering data set;

[0059] The embodiment of the present invention uses a data merging method to merge the high-frequency abnormal filtering data of quantum dot semiconductor materials and the low-frequency abnormal filtering data of quantum dot semiconductor materials after filtering into a comprehensive data set, so as to integrate the abnormal filtering information of different frequencies and finally obtain the quantum dot semiconductor material abnormal filtering data set.

[0060] Step S17: screening the quantum dot semiconductor material abnormal filtering data set for electronic transmission performance to obtain a quantum dot semiconductor material data set with excellent transmission performance;

[0061] The embodiment of the present invention screens out the abnormal filtering data set of quantum dot semiconductor materials by using the screening criteria of preset electron transmission performance, selects the most potential quantum dot semiconductor material information data in a more targeted manner, and finally obtains a data set of materials with excellent quantum dot transmission performance.

[0062] Step S18: electronically arraying the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials.

[0063] The embodiment of the present invention analyzes a data set of materials with excellent quantum dot transmission properties, and processes the quantum dot semiconductor materials in the data set of materials with excellent quantum dot transmission properties using operations such as arrangement, configuration, or assembly according to the analysis results, so as to organically organize the quantum dot semiconductor materials with excellent performance into an electronic array, and finally obtain a quantum dot semiconductor material electronic array.

[0064] The present invention firstly acquires the quantum dot semiconductor material data set of the integrated circuit, and can establish a comprehensive and multi-dimensional data set. Such a data set covers the properties and performance information of various semiconductor materials of the integrated circuit, and can lay a solid data foundation for the subsequent analysis process, thereby promoting the in-depth understanding of quantum dot semiconductor materials. By performing anomaly detection on the quantum dot semiconductor material data set of the integrated circuit, the abnormal data in the quantum dot semiconductor material data can be accurately identified. These abnormal data will indicate potential problems or special properties in the quantum dot semiconductor material. The abnormal data obtained by the detection can provide a key data basis guarantee for the subsequent abnormal filtering process, thereby helping to identify unusual material properties. At the same time, by using a suitable abnormality degree calculation formula to perform abnormal calculation on the abnormal data of the quantum dot semiconductor material of the integrated circuit, the abnormal situation of the abnormal data can be systematically quantified, and a continuous and measurable indicator is provided for the subsequent steps, which helps to more accurately understand the abnormal degree of each abnormal data, and provides strong support for the subsequent classification and processing. By comparing the calculated abnormality degree value of the quantum dot semiconductor material with the preset abnormality degree threshold, the classification and marking of the abnormal data can be realized. The key to this step is that the abnormal data can be cleverly divided into high-frequency and low-frequency abnormalities, thereby providing basic data for the subsequent filtering process. Secondly, by using the deep joint filtering algorithm and the local filtering algorithm to perform different abnormal filtering processing on the high-frequency and low-frequency abnormal data, high-frequency abnormal filtering data and low-frequency abnormal filtering data are obtained respectively. Such differentiated processing effectively eliminates the noise and abnormal fluctuations at different frequencies, thereby improving the accuracy and credibility of data abnormal filtering. Then, by merging the high-frequency and low-frequency abnormal filtering data, a comprehensive quantum dot semiconductor material abnormal filtering data set can be obtained. This step can integrate the information of different frequencies, thereby providing a more comprehensive data basis for subsequent performance screening. Next, by screening the quantum dot semiconductor material abnormal filtering data set for electronic transmission performance, materials with excellent electronic transmission performance can be determined. This detailed performance screening process can select the most potential quantum dot semiconductor materials in a more targeted manner. Finally, by electronically arraying the data set of materials with excellent quantum dot transmission performance, quantum dot semiconductor materials with excellent performance can be organically organized into electronic arrays. The key to this step is that it can achieve further integration and organization of selected materials, providing a more controllable basis for the design of electronic devices for integrated circuits.

[0065] Preferably, the abnormality degree calculation formula in step S13 is specifically:

[0066]

[0067] Where G is the abnormality value of quantum dot semiconductor material, t0 is the initial time of abnormal calculation, and t f is the termination time of the abnormal calculation, t is the integral time variable parameter of the abnormal calculation, N is the number of abnormal data features in the abnormal data of integrated circuit quantum dot semiconductor materials, X i (t) is the measured value of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials at time t, w i is the abnormal weight adjustment parameter of the ith abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials, μ i is the mean value of the abnormal distribution of the ith abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials, σ i is the standard deviation of the abnormal distribution of the ith abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials, p i is the abnormal distribution power index of the ith abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials, M is the number of abnormal dynamic features in the abnormal data of integrated circuit quantum dot semiconductor materials, and Y j (t) is the measured value of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials at time t, β j is the abnormal weight adjustment parameter of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials, q j is the dynamic attenuation index of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials, and ε is the correction value of the abnormal degree value of quantum dot semiconductor materials.

[0068] The present invention constructs an abnormality degree calculation formula for abnormal data calculation of quantum dot semiconductor materials of integrated circuits. The abnormality degree calculation formula comprehensively considers the static and dynamic characteristics of the abnormal data of quantum dot semiconductor materials of integrated circuits, including the static characteristics of the abnormal data (X i (t)) and dynamic characteristics (Y j (t)), the overall formula describes the comprehensive abnormality degree of the abnormal data, thereby taking into account the weights and abnormal properties of different features. This comprehensive abnormality metric can help identify abnormalities in quantum dot semiconductor materials of integrated circuits, so that the formula can be integrated within a specified time range and combines the static and dynamic characteristics of adjustable parameters, weights and distribution characteristics. The degree of abnormality is a comprehensive metric. By comprehensively considering the static and dynamic aspects of the quantum dot semiconductor material data set, it can make a detailed assessment of abnormal behavior that changes over time. In addition, by adjusting the parameters, it can be customized according to the characteristics of the data set and the needs of the anomaly detection process. In summary, this formula fully considers the abnormality degree value G of the quantum dot semiconductor material, the initial time t0 of the anomaly calculation, and the termination time t of the anomaly calculation. f, the integral time variable parameter t of the anomaly calculation, the number of abnormal data features N in the abnormal data of integrated circuit quantum dot semiconductor materials, the measured value X of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials at time t i (t), the abnormal weight adjustment parameter w of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials i , the mean value μ of the abnormal distribution of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials i , the abnormal distribution standard deviation σ of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials i , the abnormal distribution power index p of the i-th abnormal data feature in the abnormal data of integrated circuit quantum dot semiconductor materials i , the number of abnormal dynamic features in the abnormal data of integrated circuit quantum dot semiconductor materials M, the measured value Y of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials at time t j (t), the abnormal weight adjustment parameter β of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials j , the dynamic decay index q of the jth abnormal dynamic feature in the abnormal data of integrated circuit quantum dot semiconductor materials j , the correction value ε of the abnormality value of the quantum dot semiconductor material, according to the mutual correlation between the abnormality value G of the quantum dot semiconductor material and the above parameters, forms a functional relationship:

[0069]

[0070] The formula can realize the abnormal calculation process of abnormal data of integrated circuit quantum dot semiconductor materials. At the same time, by introducing the correction value ε of the abnormal degree value of quantum dot semiconductor materials, it can be adjusted according to the error situation occurring in the calculation process, thereby improving the accuracy and applicability of the abnormal degree calculation formula.

[0071] Preferably, step S17 comprises the following steps:

[0072] Step S171: performing electronic transmission performance analysis on the quantum dot semiconductor material abnormal filtering data set to obtain electronic transmission performance status data of the quantum dot semiconductor material;

[0073] Step S172: using the electron transport performance coefficient calculation formula to calculate the electron transport performance coefficient of the quantum dot semiconductor material electron transport performance status data to obtain the electron transport performance coefficient of the quantum dot semiconductor material;

[0074] The calculation formula of the electron transport performance coefficient is as follows:

[0075]

[0076]

[0077]

[0078] In the formula, is the electron transport performance coefficient of quantum dot semiconductor materials, E min is the minimum energy range of the band energy of the electronic transmission performance data of quantum dot semiconductor materials, E max is the maximum range of energy band energy of quantum dot semiconductor material electronic transmission performance data, E is the energy band energy integral variable parameter, ρ(E) is the energy band energy state density function, θ is the standard deviation of energy band energy distribution, E0 is the energy band energy center value, T is the energy band temperature parameter of quantum dot semiconductor material electronic transmission performance data, f(E,T) is the Fermi-Dirac distribution function, exp is the exponential function, ΔE is the electron-phonon interaction energy level difference of quantum dot semiconductor material electronic transmission performance data, k B is the Boltzmann constant, Γ is the energy band energy Gaussian width parameter, tanh is the hyperbolic tangent function, ∈ is the electronic energy level parameter of the quantum dot semiconductor material electronic transmission performance status data, ζ is the Fermi level parameter of the quantum dot semiconductor material electronic transmission performance status data, α is the energy level weight adjustment parameter, and η is the correction value of the quantum dot semiconductor material electronic transmission performance coefficient;

[0079] Step S173: comparing and judging the electron transmission performance coefficient of the quantum dot semiconductor material according to the preset electron transmission performance standard value, when the electron transmission performance coefficient of the quantum dot semiconductor material is greater than or equal to the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as excellent electron transmission performance data; when the electron transmission performance coefficient of the quantum dot semiconductor material is less than the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as poor electron transmission performance data;

[0080] Step S174: Screen out the quantum dot semiconductor material electron transport performance data marked as having excellent electron transport performance data to obtain a quantum dot material data set with excellent electron transport performance.

[0081] As an embodiment of the present invention, refer to Figure 3 As shown, Figure 2 FIG. 1 is a schematic diagram of a detailed step flow chart of step S17 in FIG. 1 . In this embodiment, step S17 includes the following steps:

[0082] Step S171: performing electronic transmission performance analysis on the quantum dot semiconductor material abnormal filtering data set to obtain electronic transmission performance status data of the quantum dot semiconductor material;

[0083] The embodiment of the present invention processes the abnormal filtering data set of quantum dot semiconductor materials obtained after abnormal processing by using a performance analysis method to analyze and examine the transmission performance conditions such as electrical conductivity, energy band electron energy level difference, energy band temperature, Fermi level, and carrier mobility of the quantum dot semiconductor materials, and finally obtains the electronic transmission performance status data of the quantum dot semiconductor materials.

[0084] Step S172: using the electron transport performance coefficient calculation formula to calculate the electron transport performance coefficient of the quantum dot semiconductor material electron transport performance status data to obtain the electron transport performance coefficient of the quantum dot semiconductor material;

[0085] The embodiment of the present invention combines the minimum range of energy band energy, the maximum range of energy band energy, the integral variable parameter of energy band energy, the energy band energy density function, the standard deviation of energy band energy distribution, the center value of energy band energy, the temperature parameter of energy band, the Fermi-Dirac distribution function, the exponential function, the electron-phonon interaction energy level difference, the Boltzmann constant, the energy band energy Gaussian width parameter, the hyperbolic tangent function, the electron energy level parameter, the Fermi energy level parameter, the energy level weight adjustment parameter and related parameters to form a suitable electron transmission performance coefficient calculation formula to calculate the electron transmission performance coefficient of the quantum dot semiconductor material electron transmission performance status data, so as to quantify the electron transmission performance status of the quantum dot semiconductor material, and finally obtain the electron transmission performance coefficient of the quantum dot semiconductor material. In addition, the electron transmission performance coefficient calculation formula can also use any transmission performance detection algorithm in the field to replace the process of electron transmission performance coefficient calculation, and is not limited to the electron transmission performance coefficient calculation formula.

[0086] The calculation formula of the electron transport performance coefficient is as follows:

[0087]

[0088]

[0089]

[0090] In the formula, is the electron transport performance coefficient of quantum dot semiconductor materials, E min is the minimum energy range of the band energy of the electronic transmission performance data of quantum dot semiconductor materials, E maxis the maximum range of energy band energy of quantum dot semiconductor material electronic transmission performance data, E is the energy band energy integral variable parameter, ρ(E) is the energy band energy state density function, θ is the standard deviation of energy band energy distribution, E0 is the energy band energy center value, T is the energy band temperature parameter of quantum dot semiconductor material electronic transmission performance data, f(E,T) is the Fermi-Dirac distribution function, exp is the exponential function, ΔE is the electron-phonon interaction energy level difference of quantum dot semiconductor material electronic transmission performance data, k B is the Boltzmann constant, Γ is the energy band energy Gaussian width parameter, tanh is the hyperbolic tangent function, ∈ is the electronic energy level parameter of the quantum dot semiconductor material electronic transmission performance status data, ζ is the Fermi level parameter of the quantum dot semiconductor material electronic transmission performance status data, α is the energy level weight adjustment parameter, and η is the correction value of the quantum dot semiconductor material electronic transmission performance coefficient;

[0091] The present invention constructs an electron transport performance coefficient calculation formula for calculating the electron transport performance coefficient of the electron transport performance status data of the quantum dot semiconductor material. The electron transport performance coefficient calculation formula describes the distribution of the energy band energy in the quantum dot semiconductor material by using the energy band energy state density function. It adopts the Gaussian distribution form to represent the density of different energy band energy states, and also uses the Fermi-Dirac distribution function to describe the function of the energy level distribution at a certain temperature. According to the form of the Fermi-Dirac distribution, it measures the electron occupancy at the energy level at a given temperature. This calculation formula calculates the electron transport performance coefficient of the quantum dot semiconductor material by integrating the energy band energy and the electron energy level, and the outer layer integral is to integrate the energy band energy, and the inner layer integral is to integrate the electron energy level. In this way, the form of the entire formula takes into account the energy band energy state density function, the Fermi-Dirac distribution function and other adjustment parameters (such as Gaussian width parameter, energy level weight adjustment parameter, etc.), and adjusts and corrects through the parameters. In this way, the electron transport performance of the quantum dot semiconductor material is evaluated by comprehensively considering these factors, thereby providing an evaluation basis for the excellence of the material. In summary, this formula fully considers the electron transport performance coefficient of quantum dot semiconductor materials. The minimum energy band range E of the electronic transport performance data of quantum dot semiconductor materials min , the maximum energy band range E of the electronic transport performance data of quantum dot semiconductor materials max , band energy integral variable parameter E, band energy state density function ρ(E), band energy distribution standard deviation θ, band energy center value E0, band temperature parameter T of quantum dot semiconductor material electronic transport performance data, Fermi-Dirac distribution function f(E,T), exponential function exp, electron-phonon interaction energy level difference ΔE of quantum dot semiconductor material electronic transport performance data, Boltzmann constant kB , energy band Gaussian width parameter Γ, hyperbolic tangent function tanh, electronic energy level parameter ∈ of quantum dot semiconductor material electronic transmission performance status data, Fermi level parameter ζ of quantum dot semiconductor material electronic transmission performance status data, energy level weight adjustment parameter α, correction value η of quantum dot semiconductor material electronic transmission performance coefficient, wherein, through the energy band energy integral variable parameter E, exponential function exp, energy band energy distribution standard deviation θ and energy band energy center value E0, a functional relationship of energy band energy state density function ρ(E) is formed. The band energy integral variable parameter E, the band temperature parameter T of the quantum dot semiconductor material electronic transmission performance data, the exponential function exp, and the Boltzmann constant k are also used. B The Fermi level parameter ζ of the quantum dot semiconductor material electronic transport performance data constitutes a functional relationship of the Fermi-Dirac distribution function f(E,T) According to the electron transport performance coefficient of quantum dot semiconductor materials The correlation between the above parameters forms a functional relationship:

[0092]

[0093] The formula can realize the calculation process of the electron transport performance coefficient of the electron transport performance status data of quantum dot semiconductor materials. At the same time, by introducing the correction value η of the electron transport performance coefficient of quantum dot semiconductor materials, it can be adjusted according to the errors occurring in the calculation process, thereby improving the accuracy and applicability of the calculation formula of the electron transport performance coefficient.

[0094] Step S173: comparing and judging the electron transmission performance coefficient of the quantum dot semiconductor material according to the preset electron transmission performance standard value, when the electron transmission performance coefficient of the quantum dot semiconductor material is greater than or equal to the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as excellent electron transmission performance data; when the electron transmission performance coefficient of the quantum dot semiconductor material is less than the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as poor electron transmission performance data;

[0095] The embodiment of the present invention compares and judges the calculated electron transmission performance coefficient of the quantum dot semiconductor material by using a preset electron transmission performance standard value. If the electron transmission performance coefficient of the quantum dot semiconductor material is greater than or equal to the preset electron transmission performance standard value, it means that the electron transmission performance of the quantum dot semiconductor material electron transmission performance status data corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is relatively strong, and the quantum dot semiconductor material electron transmission performance status data corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as excellent electron transmission performance data; if the electron transmission performance coefficient of the quantum dot semiconductor material is less than the preset electron transmission performance standard value, it means that the electron transmission performance of the quantum dot semiconductor material electron transmission performance status data corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is relatively weak, and the quantum dot semiconductor material electron transmission performance status data corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as poor electron transmission performance data.

[0096] Step S174: Screen out the quantum dot semiconductor material electron transport performance data marked as having excellent electron transport performance data to obtain a quantum dot material data set with excellent electron transport performance.

[0097] The embodiment of the present invention screens out the electronic transmission performance status data of quantum dot semiconductor materials marked as having excellent electronic transmission performance data, thereby effectively filtering out quantum dot semiconductor materials with poor electronic transmission performance, and then integrates and combines the screened out excellent electronic transmission performance data to finally obtain a data set of quantum dot materials with excellent transmission performance.

[0098] The present invention first analyzes the electronic transmission performance of the quantum dot semiconductor material abnormal filtering data set, and can study the electronic transmission performance of the quantum dot semiconductor material in detail. In this way, by examining the key parameters such as the conductivity, energy band electron energy level difference, energy band temperature, Fermi level, and carrier mobility of the quantum dot semiconductor material, a comprehensive and accurate data on the electronic transmission performance status of the quantum dot semiconductor material is obtained. This detailed analysis can provide a key performance benchmark for subsequent steps. Secondly, by using a suitable electronic transmission performance coefficient calculation formula to calculate the electronic transmission performance coefficient of the quantum dot semiconductor material electronic transmission performance status data, the electronic transmission performance status of the quantum dot semiconductor material is accurately quantified, thereby accurately calculating the electronic transmission performance coefficient of each quantum dot semiconductor material. This coefficient comprehensively considers multiple key performance indicators and can provide more detailed quantitative indicators for subsequent steps, thereby helping to accurately evaluate the electronic transmission performance of the material. Then, by comparing and judging the calculated electronic transmission performance coefficient with the preset electronic transmission performance standard value, the electronic transmission performance of the quantum dot semiconductor material can be accurately distinguished. By comparing the electronic transmission performance coefficient with the standard value, the quantum dot semiconductor material is marked as excellent or inferior, thereby providing an accurate basis for the next step of data screening. Finally, by screening out the data on the electronic transport performance of quantum dot semiconductor materials marked as having excellent electronic transport performance, we can effectively filter out quantum dot semiconductor materials with poor electronic transport performance, and extract a subset of materials with excellent electronic transport performance, thereby providing more targeted data support for subsequent electronic arraying.

[0099] Preferably, step S18 comprises the following steps:

[0100] Step S181: performing quantum dot size analysis on a data set of materials with excellent quantum dot transmission performance to obtain quantum dot semiconductor material size status data;

[0101] The embodiment of the present invention uses a microscope, a scanning electron microscope and other equipment to measure and analyze the corresponding quantum dot semiconductor materials in the quantum dot transmission performance excellent material data set, so as to analyze the key information such as the diameter, size, and shape of each quantum dot semiconductor material, and finally obtain the size status data of the quantum dot semiconductor material.

[0102] Step S182: Based on the quantum dot semiconductor material size status data, a classification algorithm is used to perform size classification processing on the quantum dot transmission performance excellent material data set to obtain a quantum dot semiconductor material size classification data set;

[0103] The embodiment of the present invention uses a suitable classification algorithm (such as K-means clustering, hierarchical clustering, etc.) to perform size classification processing according to the size conditions of each quantum dot semiconductor material in the quantum dot semiconductor material size status data, so as to divide the data set of materials with excellent quantum dot transmission performance into different size classification conditions, and finally obtain a quantum dot semiconductor material size classification data set.

[0104] Step S183: performing arrangement and distribution control on the quantum dot semiconductor material size classification data set to obtain quantum dot semiconductor material arrangement and distribution data;

[0105] The embodiment of the present invention analyzes the quantum dot semiconductor material size classification data set to understand the distribution of the quantum dot semiconductor material size classification, and then processes the quantum dot semiconductor material size classification data set according to the analysis results to control the arrangement distribution of the quantum dot semiconductor material, and finally obtains the quantum dot semiconductor material arrangement distribution data.

[0106] Step S184: electronically arraying the quantum dot semiconductor material size classification data set according to the quantum dot semiconductor material arrangement distribution data to obtain a quantum dot semiconductor material electronic array.

[0107] The embodiment of the present invention processes the corresponding quantum dot semiconductor materials in the quantum dot semiconductor material size classification data set according to the layout and arrangement distribution of the quantum dot semiconductor materials in the quantum dot semiconductor material arrangement distribution data, so as to organize the quantum dot semiconductor materials into an electronic array, and finally obtain a quantum dot semiconductor material electronic array.

[0108] The present invention firstly analyzes the quantum dot size of the data set of materials with excellent quantum dot transmission performance, and can obtain the size status data of quantum dot semiconductor materials, which covers the key information such as the diameter, size, shape, etc. of each quantum dot semiconductor material. Such an analysis process provides basic data for subsequent steps, so that the arrangement and performance of quantum dots can be more accurately controlled in the process of electronic arraying. Secondly, the data set of materials with excellent quantum dot transmission performance is size-classified by using a classification algorithm according to the material size of the quantum dot semiconductor material size status data. Through this step, the material data set can be successfully divided into different size classifications, so that quantum dot semiconductor materials of similar sizes can be classified into one category. This classification process helps to more effectively manage and analyze a large amount of data, and provides a more targeted processing basis for subsequent electronic arraying. Then, by controlling the arrangement and distribution of the quantum dot semiconductor material size classification data set, the quantum dot semiconductor material arrangement and distribution data can be systematically obtained by carefully designing and adjusting the arrangement mode. The key to this step is that it can provide more accurate control means for electronic arraying, ensure the orderly arrangement of quantum dots, and help improve the electronic transmission performance. Finally, different quantum dot semiconductor material size classification data sets are electronically arrayed by using the distribution in the quantum dot semiconductor material arrangement and distribution data. Through this step, the quantum dot semiconductor material can be successfully organized into an electronic array, thus obtaining a structure with good electronic transmission performance. The key to this process is that it provides a basis for the design and preparation of electronic devices, ensuring the efficiency and controllability of the electronic array.

[0109] Preferably, step S2 comprises the following steps:

[0110] Step S21: performing quantum dot heterogeneous topological analysis on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous topological network structure;

[0111] The embodiment of the present invention analyzes the electronic array of quantum dot semiconductor materials by using an appropriate topological analysis method to analyze the distribution relationship and topological relationship between the electronic arrays of quantum dot semiconductor materials, and then constructs the corresponding quantum dot semiconductor materials in the quantum dot semiconductor material data set of the integrated circuit according to the analysis results to determine the topological connection relationship between the quantum dot semiconductor materials, and finally obtains the quantum dot heterogeneous topological network structure.

[0112] Step S22: performing three-dimensional stacking integration design on the quantum dot heterogeneous topological network structure to obtain a quantum dot heterogeneous integrated network;

[0113] In an embodiment of the present invention, a computer-aided design tool is used to perform integrated design on the constructed quantum dot heterogeneous topological network structure to determine the three-dimensional position of each quantum dot, the hierarchical relationship of stacking, etc. According to the design results, the heterogeneous structure of the quantum dots is used to stack them three-dimensionally into a more compact and efficient network structure, and finally a quantum dot heterogeneous integrated network is obtained.

[0114] Step S23: Using the quantum tunneling effect to perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network to obtain a quantum dot interconnected network.

[0115] The embodiment of the present invention interconnects the quantum dot heterogeneous integrated network using the quantum tunneling effect according to the quantum properties of quantum dots, so as to determine the tunneling path of the quantum dots in the network and a faster and lower-energy interconnection method, and ensure that the quantum dot heterogeneous integrated network can work effectively under the quantum tunneling effect, ultimately obtaining a quantum dot interconnected network.

[0116] The present invention firstly uses quantum dot semiconductor material electronic arrays to perform quantum dot heterogeneous topological analysis on the quantum dot semiconductor material data set of the integrated circuit. The key to this step is that it can provide a comprehensive understanding of the distribution and mutual relationship of quantum dots in the integrated circuit, providing a basis for subsequent design and optimization. Then, by performing a three-dimensional stacking integrated design on the quantum dot heterogeneous topological network structure, the heterogeneous properties of quantum dots can be fully utilized, and they are three-dimensionally stacked in the integrated circuit, thereby creatively designing a more compact and efficient structure. The key to this step is that it can improve the integration and performance of the circuit, and provide more flexible space for the next step of interconnection. Finally, by using the quantum tunneling effect to perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network, the quantum characteristics of quantum dots can be cleverly utilized to achieve a faster and lower energy consumption interconnection method. The key to this step is that it can improve the overall performance of the integrated circuit, reduce power consumption, and give full play to the potential advantages of quantum dots.

[0117] Preferably, step S22 includes the following steps:

[0118] Step S221: performing three-dimensional stacking hierarchical allocation on the quantum dot heterogeneous topological network structure to obtain a quantum dot heterogeneous three-dimensional stacking hierarchical network structure;

[0119] The embodiment of the present invention firstly performs a detailed analysis on the quantum dot heterogeneous topological network structure, including nodes, connection relationships, hierarchical structures, etc. Secondly, based on the analysis results, a hierarchical allocation design is performed on the quantum dot heterogeneous topological network structure, including determining the three-dimensional position of each node in the quantum dot heterogeneous topological network structure, the stacking hierarchical order, etc. Then, the design results are processed by using computer-aided design tools to solve the problem of efficient organization of quantum dot heterogeneity in three-dimensional space, and finally a quantum dot heterogeneous three-dimensional stacked hierarchical network structure is obtained.

[0120] Step S222: performing network performance evaluation and analysis on the quantum dot heterogeneous three-dimensional stacked hierarchical network structure to obtain quantum dot three-dimensional stacked hierarchical network performance data;

[0121] The embodiment of the present invention first selects appropriate network performance indicators, such as network delay, bandwidth, throughput, etc., and then analyzes the quantum dot heterogeneous three-dimensional stacked hierarchical network structure by using a network performance evaluation method to analyze and record various performance data in the evaluation process, and finally obtain the quantum dot three-dimensional stacked hierarchical network performance data.

[0122] Step S223: Optimizing the performance data of the quantum dot three-dimensional stacking hierarchical network to obtain the quantum dot three-dimensional stacking network performance optimization data;

[0123] The embodiment of the present invention first analyzes the quantum dot three-dimensional stacked hierarchical network performance data obtained through evaluation and analysis to accurately identify potential performance improvement points and bottlenecks in the quantum dot heterogeneous three-dimensional stacked hierarchical network structure, and then optimizes the analyzed potential problems by adjusting design parameters, topological structure, optimizing layout, and using advanced algorithms to maximize the heterogeneous performance of quantum dots, and further improve the efficiency and reliability of the quantum dot heterogeneous three-dimensional stacked hierarchical network structure, and finally obtain quantum dot three-dimensional stacked network performance optimization data.

[0124] Step S224: Perform hierarchical adjustment and integrated design on the quantum dot heterogeneous three-dimensional stacking hierarchical network structure according to the quantum dot three-dimensional stacking network performance optimization data to obtain a quantum dot heterogeneous integrated network.

[0125] The embodiment of the present invention applies the results of the quantum dot three-dimensional stacking network performance optimization data in the optimization process to the quantum dot heterogeneous three-dimensional stacking hierarchical network structure for adjustment, including reallocating node positions, adjusting the hierarchical structure, etc., to achieve the optimal integrated design of the performance and structure of the quantum dot heterogeneous three-dimensional stacking hierarchical network structure, ensure that the performance is effectively improved, and finally integrate the quantum dot heterogeneous integrated network.

[0126] The present invention firstly distributes the quantum dot heterogeneous topological network structure in three-dimensional stacking layers, which can effectively utilize the three-dimensional space, thereby improving the compactness and overall performance of the quantum dot heterogeneous topological network structure. Through this design, the problem of efficient organization of quantum dot heterogeneity in three-dimensional space can be creatively solved, laying the foundation for subsequent performance evaluation and optimization. Secondly, by performing network performance evaluation and analysis on the quantum dot heterogeneous three-dimensional stacking hierarchical network structure, a deep understanding of the network performance of the quantum dot heterogeneous three-dimensional stacking hierarchical network structure design can be provided, including key performance indicators such as delay, power consumption, and bandwidth. Through detailed performance evaluation, potential improvement points and bottlenecks can be accurately identified, providing guidance for subsequent performance optimization. Then, by performing targeted performance optimization on the obtained quantum dot three-dimensional stacking hierarchical network performance data, the overall performance of the network can be successfully improved by adjusting design parameters, optimizing layout and adopting advanced algorithms. The key to this step is to maximize the heterogeneous performance of quantum dots and further improve the efficiency and reliability of the circuit. Finally, by adjusting the hierarchical integrated design of the quantum dot heterogeneous three-dimensional stacking hierarchical network structure according to the quantum dot three-dimensional stacking network performance optimization data, the performance optimization results can be applied to the actual design, thus forming a highly optimized quantum dot heterogeneous integrated network. Through this comprehensive design adjustment, the best balance between performance and structure can be achieved, providing a solid foundation for the successful construction of quantum dot interconnection networks.

[0127] Preferably, step S3 comprises the following steps:

[0128] Step S31: performing electronic energy level distribution analysis on the quantum dot interconnection network to obtain electronic energy level distribution data of the quantum dot network;

[0129] The embodiments of the present invention analyze the electronic conditions within the quantum dot interconnection network by using spectral technology, electrical testing or numerical simulation methods, so as to deeply study the electronic structure of the quantum dot interconnection network and reveal the energy level distribution of electrons in the quantum dots, and finally obtain the electronic energy level distribution data of the quantum dot network.

[0130] Step S32: performing energy level external field control on the quantum dot interconnection network according to the quantum dot network electronic energy level distribution data to obtain a quantum dot energy level control network;

[0131] The embodiment of the present invention uses an external electric field, magnetic field or other methods to regulate the quantum dot interconnection network according to the electron energy level distribution in the quantum dot network electron energy level distribution data, thereby successfully changing the energy level distribution state of electrons in the quantum dot interconnection network and ultimately obtaining a quantum dot energy level regulation network.

[0132] Step S33: using density functional theory to perform electronic band gap analysis on the quantum dot energy level control network to obtain electronic band gap data of the quantum dot network;

[0133] The embodiment of the present invention uses density functional theory to analyze the quantum dot energy level control network after external field control, so as to deeply analyze and understand the electronic band gap in the quantum dot energy level control network, that is, the energy required for electrons to transition between different energy levels, and finally obtain the electronic band gap data of the quantum dot network.

[0134] Step S34: performing electronic energy band regulation analysis on the quantum dot energy level regulation network according to the electronic band gap data of the quantum dot network to obtain the electronic energy band structure data of the quantum dot;

[0135] The embodiment of the present invention performs regulation analysis on the quantum dot energy level regulation network according to the band gap conditions of network electrons in the quantum dot network electronic band gap condition data, so as to analyze the structure of electronic energy bands in the quantum dot energy level regulation network, that is, the relationship and distribution between different energy bands, and finally obtain the quantum dot electronic band structure data.

[0136] Step S35: Designing an intelligent integrated circuit for the quantum dot energy level control network based on the quantum dot electronic band structure data to obtain an intelligent quantum dot integrated circuit.

[0137] The embodiment of the present invention uses the electronic band structure information in the quantum dot electronic band structure data to perform integrated design on the quantum dot energy level control network, including integrated processing such as selecting circuit device type, circuit topology, layout design, etc., and simulates the integrated circuit by using circuit design software to verify the performance and stability of the integrated circuit, and finally obtains an intelligent quantum dot integrated circuit.

[0138] The present invention first analyzes the electronic energy level distribution of the quantum dot interconnection network, and can deeply study the electronic structure of the quantum dot interconnection network, thereby obtaining detailed electronic energy level distribution data. This analysis process can not only provide a comprehensive understanding of the electronic state inside the quantum dot, but also lay the foundation for subsequent energy level regulation and electronic band gap analysis. By revealing the distribution of electrons in quantum dots, a solid theoretical foundation is laid for the goal of optimizing the performance and characteristics of quantum dots. Secondly, by performing external field energy level regulation on the quantum dot interconnection network according to the electronic energy level distribution data of the quantum dot network, targeted adjustment of the quantum dot energy level can be achieved, thereby obtaining a quantum dot energy level regulation network. The key to this step is that through external field regulation, the distribution state of electrons in the quantum dots can be successfully changed, providing an operational reference for subsequent electronic band gap regulation. Then, by using density functional theory to analyze the electronic band gap of the quantum dot energy level regulation network, the situation of the electronic band gap in the quantum dot energy level regulation network can be deeply understood, that is, the energy required for electrons to transition between different energy levels. Such data can provide key information for subsequent energy band regulation and help optimize the performance of the quantum dot energy level regulation network. Next, the quantum dot energy level control network is analyzed for electronic band regulation by using the quantum dot network electronic band gap data. This analysis process helps to understand the structure of electronic bands in the quantum dot energy level control network, that is, the relationship and distribution between different energy bands. Through this step, the quantum dot energy level control network can be adjusted more deeply to achieve a more accurate electronic band structure design. Finally, the quantum dot energy level control network is designed with intelligent integrated circuits based on the acquired quantum dot electronic band structure data. The purpose of this step is to make full use of the information obtained from the previous analysis to achieve intelligent integrated design of the quantum dot energy level control network. Through this design process, intelligent quantum dot integrated circuits can be obtained, which have better performance and can meet the requirements of specific application fields, thereby promoting the innovative application of quantum dot technology in the field of electronic devices.

[0139] Preferably, step S4 comprises the following steps:

[0140] Step S41: Acquire integrated circuit real-time environment data and integrated circuit user demand data;

[0141] The embodiments of the present invention collect real-time data of the environment around the integrated circuit by using sensors, monitoring equipment or other related environmental monitoring technologies, including data on temperature, humidity, electromagnetic interference, etc., and collect and obtain the demand data of integrated circuit users through surveys, user feedback, market research or other user demand data collection methods, including data on performance requirements, power consumption requirements, reliability requirements, etc., to ultimately obtain real-time environmental data of the integrated circuit and integrated circuit user demand data.

[0142] Step S42: performing circuit operation environment evaluation and analysis on the smart quantum dot integrated circuit according to the real-time environment data of the integrated circuit to obtain the integrated circuit operation environment influencing factor;

[0143] The embodiment of the present invention first cleans, calibrates and preprocesses the collected real-time environmental data of the integrated circuit to ensure the accuracy and consistency of the data. Then, by using statistical analysis, model building and other methods, the processed real-time environmental data of the integrated circuit is evaluated for the environmental influencing factors of the smart quantum dot integrated circuit during operation, such as the influence of temperature on circuit performance, the influence of electromagnetic interference on circuit stability, etc., and finally the integrated circuit operation environment influencing factors are obtained.

[0144] Step S43: performing circuit operation demand evaluation and analysis on the smart quantum dot integrated circuit according to the integrated circuit user demand data to obtain the integrated circuit operation user demand influencing factor;

[0145] The embodiment of the present invention first organizes and analyzes the collected integrated circuit user demand data to clarify the importance and priority of each user demand, and then evaluates the impact factors of user demand on the operation of the smart quantum dot integrated circuit by using data analysis, demand analysis and other methods, such as the impact of performance requirements on circuit design, the impact of power consumption requirements on circuit optimization, etc., and finally obtains the user demand impact factor of the integrated circuit operation.

[0146] Step S44: Optimize the circuit operation design of the smart quantum dot integrated circuit based on the integrated circuit operation environment influencing factors and the integrated circuit operation user demand influencing factors to obtain a quantum dot integrated optimized circuit.

[0147] The embodiment of the present invention firstly performs a trade-off analysis on the impact factors of the integrated circuit operation environment and the impact factors of the integrated circuit operation user demand, determines the priority and relevance of different impact factors, so as to optimize the design, and then optimizes the circuit design of the smart quantum dot integrated circuit based on the trade-off analysis of the impact factors, including improving the circuit topology, material selection, optimizing power consumption and performance, etc., thereby generating an optimized design scheme for the quantum dot integrated circuit. Finally, the smart quantum dot integrated circuit is optimized according to the generated optimized design scheme of the quantum dot integrated circuit, and finally a quantum dot integrated optimized circuit is obtained.

[0148] The present invention firstly acquires the real-time environment data of the integrated circuit and the user demand data, and can establish a comprehensive data foundation, wherein the real-time environment data of the integrated circuit covers various physical and environmental parameters in the operation process of the integrated circuit, and the user demand data reflects the end user's expectations for the operation performance and function of the intelligent quantum dot integrated circuit, and the combination of these two aspects of data can provide the necessary information support for the subsequent evaluation and optimization. Secondly, by evaluating and analyzing the circuit operation environment of the intelligent quantum dot integrated circuit according to the real-time environment data of the integrated circuit, a series of environmental factors affecting the operation of the integrated circuit can be obtained, and these factors involve various environmental conditions such as temperature, humidity, and electromagnetic fields that have a potential impact on the circuit performance. By deeply understanding these environmental factors, the stability and adaptability of the circuit can be better considered in the subsequent design stage to improve the robustness of the intelligent quantum dot integrated circuit. Then, by evaluating and analyzing the circuit operation demand of the intelligent quantum dot integrated circuit according to the user demand data of the integrated circuit, the key factors affecting user satisfaction can be obtained, which include performance requirements, power consumption limits, interface standards, etc., which are directly related to the user's experience in actual use. By deeply understanding these user demand factors, the expectations of the end users can be better met, thereby improving the market competitiveness of the intelligent quantum dot integrated circuit. Finally, the intelligent quantum dot integrated circuit is optimized based on the factors affecting the operating environment of the integrated circuit and the factors affecting the user's needs, aiming to meet the environmental requirements while taking into account the user's needs, thus achieving comprehensive optimization of the intelligent quantum dot integrated circuit. The result of the optimization will be a more stable, efficient, and user-satisfied quantum dot integrated circuit optimization circuit, providing a more flexible solution for dealing with different operating scenarios and promoting the development of integrated circuit technology in practical applications.

[0149] Preferably, the present invention further provides an integrated circuit design system for executing the integrated circuit design method as described above, the integrated circuit design system comprising:

[0150] The quantum dot semiconductor material data processing module is used to obtain the quantum dot semiconductor material data set of the integrated circuit, and perform electronic transmission performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a data set of materials with excellent quantum dot transmission performance; and perform electronic arraying on the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials;

[0151] A quantum dot heterogeneous network integrated interconnection module is used to perform quantum dot heterogeneous integration design on a quantum dot semiconductor material data set of an integrated circuit according to a quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integrated network; and to perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network to obtain a quantum dot interconnected network;

[0152] The intelligent integrated circuit design module is used to analyze the electronic energy band regulation of the quantum dot interconnection network to obtain the electronic energy band structure data of the quantum dot; based on the electronic energy band structure data of the quantum dot, the intelligent integrated circuit design of the quantum dot interconnection network is performed to obtain an intelligent quantum dot integrated circuit;

[0153] The integrated circuit operation optimization module is used to obtain the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit; based on the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit, the circuit operation optimization design of the smart quantum dot integrated circuit is performed to obtain the quantum dot integrated optimized circuit.

[0154] In summary, the present invention provides an integrated circuit design system, which consists of a quantum dot semiconductor material data processing module, a quantum dot heterogeneous network integrated interconnection module, an intelligent integrated circuit design module, and an integrated circuit operation optimization module. It can realize any integrated circuit design method described in the present invention, and is used to realize an integrated circuit design method by combining the operations between computer programs running on each module. The internal structure of the system cooperates with each other. By introducing quantum dot technology, it is possible to achieve a high degree of controllability of the electronic band structure of the integrated circuit at a microscopic scale, thereby breaking through the limitations of traditional integrated circuit design. Secondly, by heterogeneously integrating and interconnecting quantum dots, adaptive heterogeneous integrated circuit design at a microscopic scale can be achieved, thereby promoting the frontier of integrated circuit design. At the same time, the dynamic adjustment of circuit performance is also achieved by regulating the electronic band structure, thereby adapting to different workloads and environmental conditions, and optimizing the operating state of the integrated circuit according to the real-time environment and user needs, improving the adaptability and flexibility of the integrated circuit, which can greatly reduce duplication of work and manpower investment, and can quickly and effectively provide a more accurate and efficient integrated circuit design process, thereby simplifying the operation process of the integrated circuit design system.

[0155] Therefore, the embodiments should be regarded as illustrative and non-restrictive from all points, and the scope of the present invention is limited by the appended claims rather than the above description, and it is therefore intended that all changes falling within the meaning and range of equivalent elements of the application documents are included in the present invention.

[0156] The above description is only a specific embodiment of the present invention, so that those skilled in the art can understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but should conform to the widest scope consistent with the principles and novel features invented herein.

Claims

1. A method for designing an integrated circuit, characterized in that: The following steps are involved: Step S1: obtaining a quantum dot semiconductor material data set of an integrated circuit, and performing electron transport performance screening on the quantum dot semiconductor material data set of the integrated circuit to obtain a material data set with excellent quantum dot transport performance; The data set of materials with excellent quantum dot transmission performance is electronically arrayed to obtain an electronic array of quantum dot semiconductor materials; wherein step S1 includes the following steps: Step S11: Acquire a quantum dot semiconductor material data set of an integrated circuit; Step S12: performing anomaly detection on the quantum dot semiconductor material data set of the integrated circuit to obtain abnormal data of the quantum dot semiconductor material of the integrated circuit; Step S13: using an abnormality calculation formula to perform abnormality calculation on the abnormal data of the integrated circuit quantum dot semiconductor material to obtain an abnormality value of the quantum dot semiconductor material; wherein the abnormality calculation formula is specifically: ； In the formula, is the abnormality value of quantum dot semiconductor material, is the initial time of the anomaly calculation, is the termination time of the abnormal calculation, is the integral time variable parameter for abnormal calculation, is the number of abnormal data features in the abnormal data of integrated circuit quantum dot semiconductor materials, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal data features are in time The measured value at This is the first abnormal data of integrated circuit quantum dot semiconductor materials The anomaly weight adjustment parameter of the abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The mean of the abnormal distribution of abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The standard deviation of the abnormal distribution of abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal distribution power index of the abnormal data features, is the number of abnormal dynamic features in the abnormal data of integrated circuit quantum dot semiconductor materials, This is the first abnormal data of integrated circuit quantum dot semiconductor materials abnormal dynamic features in time The measured value at This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal weight adjustment parameter of the abnormal dynamic feature, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The dynamic decay index of abnormal dynamic characteristics, is the correction value of the abnormality degree of quantum dot semiconductor material; Step S14: comparing and judging the abnormality value of the quantum dot semiconductor material according to the preset abnormality threshold, when the abnormality value of the quantum dot semiconductor material is greater than or equal to the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the high-frequency abnormal data of the quantum dot semiconductor material; when the abnormality value of the quantum dot semiconductor material is less than the preset abnormality threshold, the abnormal data of the integrated circuit quantum dot semiconductor material corresponding to the abnormality value of the quantum dot semiconductor material is marked as the low-frequency abnormal data of the quantum dot semiconductor material; Step S15: using a deep joint filtering algorithm to perform joint filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material high-frequency abnormal data to obtain quantum dot semiconductor material high-frequency abnormal filtered data; using a local filtering algorithm to perform local filtering processing on the integrated circuit quantum dot semiconductor material abnormal data marked as quantum dot semiconductor material low-frequency abnormal data to obtain quantum dot semiconductor material low-frequency abnormal filtered data; Step S16: merging the quantum dot semiconductor material high frequency abnormal filtering data and the quantum dot semiconductor material low frequency abnormal filtering data to obtain a quantum dot semiconductor material abnormal filtering data set; Step S17: screening the quantum dot semiconductor material abnormal filtering data set for electronic transmission performance to obtain a quantum dot semiconductor material data set with excellent transmission performance; Step S18: electronically arraying the data set of materials with excellent quantum dot transmission performance to obtain an electronic array of quantum dot semiconductor materials; Step S2: performing quantum dot heterogeneous integration design on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous integration network; performing quantum dot tunneling interconnection on the quantum dot heterogeneous integration network to obtain a quantum dot interconnection network; wherein step S2 includes the following steps: Step S21: performing quantum dot heterogeneous topological analysis on the quantum dot semiconductor material data set of the integrated circuit according to the quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous topological network structure; Step S22: performing a three-dimensional stacking integration design on the quantum dot heterogeneous topological network structure to obtain a quantum dot heterogeneous integrated network; wherein step S22 includes the following steps: Step S221: performing three-dimensional stacking hierarchical allocation on the quantum dot heterogeneous topological network structure to obtain a quantum dot heterogeneous three-dimensional stacking hierarchical network structure; Step S222: performing network performance evaluation and analysis on the quantum dot heterogeneous three-dimensional stacked hierarchical network structure to obtain quantum dot three-dimensional stacked hierarchical network performance data; Step S223: Optimizing the performance data of the quantum dot three-dimensional stacking hierarchical network to obtain the quantum dot three-dimensional stacking network performance optimization data; Step S224: performing hierarchical adjustment and integrated design on the quantum dot heterogeneous three-dimensional stacking hierarchical network structure according to the quantum dot three-dimensional stacking network performance optimization data to obtain a quantum dot heterogeneous integrated network; Step S23: using the quantum tunneling effect to perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network to obtain a quantum dot interconnected network; Step S3: performing electronic energy band regulation analysis on the quantum dot interconnection network to obtain quantum dot electronic energy band structure data; performing intelligent integrated circuit design on the quantum dot interconnection network based on the quantum dot electronic energy band structure data to obtain an intelligent quantum dot integrated circuit; Step S4: Acquire the real-time environment data of the integrated circuit and the user demand data of the integrated circuit; optimize the circuit operation design of the smart quantum dot integrated circuit based on the real-time environment data of the integrated circuit and the user demand data of the integrated circuit to obtain a quantum dot integrated optimized circuit.

2. The integrated circuit design method according to claim 1, characterized in that: Step S17 includes the following steps: Step S171: performing electronic transmission performance analysis on the quantum dot semiconductor material abnormal filtering data set to obtain electronic transmission performance status data of the quantum dot semiconductor material; Step S172: using the electron transport performance coefficient calculation formula to calculate the electron transport performance coefficient of the quantum dot semiconductor material electron transport performance status data to obtain the electron transport performance coefficient of the quantum dot semiconductor material; The calculation formula of the electron transport performance coefficient is as follows: ； ； ； In the formula, is the electron transport performance coefficient of quantum dot semiconductor materials, The minimum energy range of the band energy of the electronic transmission performance data of quantum dot semiconductor materials. The maximum energy range of the band energy of the electronic transmission performance data of quantum dot semiconductor materials, is the band energy integral variable parameter, is the energy band energy density of states function, is the standard deviation of the energy band distribution, is the energy center value of the energy band, It is the band temperature parameter of the electronic transmission performance data of quantum dot semiconductor materials. is the Fermi-Dirac distribution function, is an exponential function, The electron-phonon interaction energy level difference is the electron transport performance data of quantum dot semiconductor materials. is the Boltzmann constant, is the energy band Gaussian width parameter, is the hyperbolic tangent function, The electronic energy level parameters of the electronic transport performance data of quantum dot semiconductor materials, The Fermi level parameter of the electronic transport performance data of quantum dot semiconductor materials, is the energy level weight adjustment parameter, is the corrected value of the electron transport performance coefficient of quantum dot semiconductor materials; Step S173: comparing and judging the electron transmission performance coefficient of the quantum dot semiconductor material according to the preset electron transmission performance standard value, when the electron transmission performance coefficient of the quantum dot semiconductor material is greater than or equal to the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as excellent electron transmission performance data; when the electron transmission performance coefficient of the quantum dot semiconductor material is less than the preset electron transmission performance standard value, the electron transmission performance status data of the quantum dot semiconductor material corresponding to the electron transmission performance coefficient of the quantum dot semiconductor material is marked as poor electron transmission performance data; Step S174: Screen out the quantum dot semiconductor material electron transport performance data marked as having excellent electron transport performance data to obtain a quantum dot material data set with excellent electron transport performance.

3. The integrated circuit design method according to claim 1, characterized in that: Step S18 includes the following steps: Step S181: performing quantum dot size analysis on a data set of materials with excellent quantum dot transmission performance to obtain quantum dot semiconductor material size status data; Step S182: Based on the quantum dot semiconductor material size status data, a classification algorithm is used to perform size classification processing on the quantum dot transmission performance excellent material data set to obtain a quantum dot semiconductor material size classification data set; Step S183: performing arrangement and distribution control on the quantum dot semiconductor material size classification data set to obtain quantum dot semiconductor material arrangement and distribution data; Step S184: electronically arraying the quantum dot semiconductor material size classification data set according to the quantum dot semiconductor material arrangement distribution data to obtain a quantum dot semiconductor material electronic array.

4. The integrated circuit design method according to claim 1, characterized in that: Step S3 includes the following steps: Step S31: performing electronic energy level distribution analysis on the quantum dot interconnection network to obtain electronic energy level distribution data of the quantum dot network; Step S32: performing energy level external field control on the quantum dot interconnection network according to the quantum dot network electronic energy level distribution data to obtain a quantum dot energy level control network; Step S33: using density functional theory to perform electronic band gap analysis on the quantum dot energy level control network to obtain electronic band gap data of the quantum dot network; Step S34: performing electronic energy band regulation analysis on the quantum dot energy level regulation network according to the electronic band gap data of the quantum dot network to obtain the electronic energy band structure data of the quantum dot; Step S35: Designing an intelligent integrated circuit for the quantum dot energy level control network based on the quantum dot electronic band structure data to obtain an intelligent quantum dot integrated circuit.

5. The integrated circuit design method according to claim 1, characterized in that: Step S4 includes the following steps: Step S41: Acquire integrated circuit real-time environment data and integrated circuit user demand data; Step S42: performing circuit operation environment evaluation and analysis on the smart quantum dot integrated circuit according to the real-time environment data of the integrated circuit to obtain the integrated circuit operation environment influencing factor; Step S43: performing circuit operation demand evaluation and analysis on the smart quantum dot integrated circuit according to the integrated circuit user demand data to obtain the integrated circuit operation user demand influencing factor; Step S44: Optimize the circuit operation design of the smart quantum dot integrated circuit based on the integrated circuit operation environment influencing factors and the integrated circuit operation user demand influencing factors to obtain a quantum dot integrated optimized circuit.

6. A system for designing an integrated circuit, characterized in that: For executing the integrated circuit design method according to claim 1, the integrated circuit design system comprises: The quantum dot semiconductor material data processing module is used to obtain the quantum dot semiconductor material data set of the integrated circuit; perform anomaly detection on the quantum dot semiconductor material data set of the integrated circuit to obtain the abnormal data of the quantum dot semiconductor material of the integrated circuit; perform anomaly calculation on the abnormal data of the quantum dot semiconductor material of the integrated circuit using the abnormal degree calculation formula to obtain the abnormal degree value of the quantum dot semiconductor material; wherein the abnormal degree calculation formula is specifically as follows: ； In the formula, is the abnormality value of quantum dot semiconductor material, is the initial time of the anomaly calculation, is the termination time of the abnormal calculation, is the integral time variable parameter for abnormal calculation, is the number of abnormal data features in the abnormal data of integrated circuit quantum dot semiconductor materials, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal data features are in time The measured value at This is the first abnormal data of integrated circuit quantum dot semiconductor materials The anomaly weight adjustment parameter of the abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The mean of the abnormal distribution of abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The standard deviation of the abnormal distribution of abnormal data features, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal distribution power index of the abnormal data features, is the number of abnormal dynamic features in the abnormal data of integrated circuit quantum dot semiconductor materials, This is the first abnormal data of integrated circuit quantum dot semiconductor materials abnormal dynamic features in time The measured value at This is the first abnormal data of integrated circuit quantum dot semiconductor materials The abnormal weight adjustment parameter of the abnormal dynamic feature, This is the first abnormal data of integrated circuit quantum dot semiconductor materials The dynamic decay index of abnormal dynamic characteristics, is a correction value of the quantum dot semiconductor material abnormality value; the quantum dot semiconductor material abnormality value is compared and judged according to a preset abnormality threshold; when the quantum dot semiconductor material abnormality value is greater than or equal to the preset abnormality threshold, the integrated circuit quantum dot semiconductor material abnormality data corresponding to the quantum dot semiconductor material abnormality value is marked as quantum dot semiconductor material high-frequency abnormality data; when the quantum dot semiconductor material abnormality value is less than the preset abnormality threshold, the integrated circuit quantum dot semiconductor material abnormality data corresponding to the quantum dot semiconductor material abnormality value is marked as quantum dot semiconductor material low-frequency abnormality data; the integrated circuit quantum dot semiconductor material abnormality data marked as quantum dot semiconductor material high-frequency abnormality data is filtered out by a deep joint filtering algorithm. Conductor material abnormal data are jointly filtered to obtain high-frequency abnormal filtering data of quantum dot semiconductor materials; integrated circuit quantum dot semiconductor material abnormal data marked as low-frequency abnormal data of quantum dot semiconductor materials are locally filtered using a local filtering algorithm to obtain low-frequency abnormal filtering data of quantum dot semiconductor materials; quantum dot semiconductor material high-frequency abnormal filtering data and quantum dot semiconductor material low-frequency abnormal filtering data are merged to obtain quantum dot semiconductor material abnormal filtering data set; quantum dot semiconductor material abnormal filtering data set is screened for electronic transmission performance to obtain quantum dot transmission performance excellent material data set; quantum dot transmission performance excellent material data set is electronically arrayed to obtain quantum dot semiconductor material electronic array; A quantum dot heterogeneous network integrated interconnection module is used to perform a quantum dot heterogeneous topological analysis on a quantum dot semiconductor material data set of an integrated circuit according to a quantum dot semiconductor material electronic array to obtain a quantum dot heterogeneous topological network structure; perform a three-dimensional stacking hierarchical allocation on the quantum dot heterogeneous topological network structure to obtain a quantum dot heterogeneous three-dimensional stacking hierarchical network structure; perform a network performance evaluation and analysis on the quantum dot heterogeneous three-dimensional stacking hierarchical network structure to obtain quantum dot three-dimensional stacking hierarchical network performance data; perform performance optimization on the quantum dot three-dimensional stacking hierarchical network performance data to obtain quantum dot three-dimensional stacking network performance optimization data; perform hierarchical adjustment and integrated design on the quantum dot heterogeneous three-dimensional stacking hierarchical network structure according to the quantum dot three-dimensional stacking network performance optimization data to obtain a quantum dot heterogeneous integrated network; perform quantum dot tunneling interconnection on the quantum dot heterogeneous integrated network using the quantum tunneling effect to obtain a quantum dot interconnected network; The intelligent integrated circuit design module is used to analyze the electronic energy band regulation of the quantum dot interconnection network to obtain the electronic energy band structure data of the quantum dot; based on the electronic energy band structure data of the quantum dot, the intelligent integrated circuit design of the quantum dot interconnection network is performed to obtain an intelligent quantum dot integrated circuit; The integrated circuit operation optimization module is used to obtain the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit; based on the real-time environmental data of the integrated circuit and the user demand data of the integrated circuit, the circuit operation optimization design of the smart quantum dot integrated circuit is performed to obtain the quantum dot integrated optimized circuit.

Images