An oxidant slurry for improving the electrical strength of SrTiO3 semiconductor ceramic substrate, a preparation method and application thereof

Abstract

The application discloses an oxidant slurry for improving the electric strength of an SrTiO3 semiconductor ceramic substrate and a preparation method and application thereof, relates to the technical field of oxidant slurry and a preparation method and application thereof, and the oxidant slurry is prepared from a main body material and an additive, the main body material is Bi2O3, and the additive comprises a mixture of one or more substances in ZnO, Al2O3, B2O3, CuO, MnO2 and Fe2O3. Bi2O3 is adopted as the main body material, and one or more of trace amounts of ZnO, Al2O3, B2O3, CuO, MnO2 and Fe2O3 is added, so that the obtained oxidant slurry is beneficial to melting into the grain boundary of an SrTiO3-based semiconductor crystal grain during oxidation sintering, better infiltration and coating of the semi-conducting SrTiO3 crystal grain, formation of a "core-shell" structure of a semi-conducting "core" and an insulating "shell", the oxidant slurry does not contain heavy metal elements such as Pb, and can effectively improve the electric strength of the grain boundary layer ceramic material.

Description

Technical Field

[0001] This invention relates to the technical field of oxidant slurries, their preparation methods, and applications, specifically to an oxidant slurry for improving the dielectric strength of SrTiO3 semiconductor ceramic substrates, its preparation method, and its applications. Background Technology

[0002] Type III ceramics, also known as grain boundary layer ceramics, consist of a semiconductor "core" and an insulating "shell" inside the ceramic body. They have an ultra-high dielectric constant and are a key material for manufacturing large-capacity micro single-layer capacitors (SLCs). These capacitors have advantages such as small size, large capacitance, and good frequency characteristics. They are suitable for micro-assembly and packaging processes of integrated circuits or ceramic thin film circuits and are being used more and more widely.

[0003] Its manufacturing process differs from the conventional single-firing of Class I and Class II ceramics. Instead, it adopts a two-step sintering method. First, the SrTiO3 grains are made semiconductive through a forced reduction sintering process. Then, an oxidant material is coated on the ceramic body, and a second sintering is carried out in an oxidizing atmosphere. This allows the oxidant to penetrate into the ceramic grain boundaries, covering the semiconductive grains, giving the ceramic insulation and improving the electrical conductivity of the ceramic body.

[0004] The fabrication process of grain boundary layer ceramic materials is lengthy and complex. Domestic research on grain boundary layer ceramic materials, especially oxidant materials, is limited. Currently, the voltage withstand capability of domestically produced grain boundary layer ceramic materials is generally low, and capacitors produced using grain boundary layer dielectric substrates have insufficient voltage withstand reliability (typically only a few hundred hours). This significantly limits the high-reliability applications of grain boundary layer ceramic single-layer capacitors (SLCs). From the perspective of the insulation principle of grain boundary ceramics, grain boundary composition and thickness have a significant impact on the voltage withstand performance of the product. Controlling the composition of the oxidant material and the manufacturing process can improve the dielectric strength of grain boundary layer capacitor ceramics and thus improve the reliability of grain boundary layer ceramic single-layer capacitors (SLCs). Chinese patent CN113135750A (2021) provides a method for preparing an oxidant, focusing on improving the insulation resistance of the capacitor but without evaluating the dielectric strength. Furthermore, it uses heavy metal elements such as Pb as trace additives, which is environmentally unfriendly.

[0005] Therefore, this application is submitted. Summary of the Invention

[0006] The technical problem to be solved by this invention is that current grain boundary layer ceramic materials have low electrical conductivity and the use of heavy metal elements such as Pb as trace additives is not environmentally friendly.

[0007] This invention is achieved through the following technical solution:

[0008] This application proposes an oxidant slurry for improving the dielectric strength of SrTiO3 semiconductor ceramic substrates, comprising a main material and additives. The main material is Bi2O3, and the additives include a mixture of one or more substances selected from ZnO, Al2O3, B2O3, CuO, MnO2, and Fe2O3.

[0009] Preferably, the mass fractions of the additives mixed with Bi2O3 are 5%–8%, 2%–5%, 5%–8%, 2%–5%, and 2%–5%, respectively, wherein the mass fraction of Bi2O3 is 74%–95%.

[0010] To achieve the above objectives, this application also proposes a method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates, comprising the following steps:

[0011] S1: Weigh the raw materials of the oxidant slurry according to the above claims, mix and grind the raw materials, and then dry and sieve them to obtain mixed oxidant powder;

[0012] S2: The carrier is prepared by mixing and stirring ethyl cellulose solution and terpineol;

[0013] S3: Mix and stir the carrier and the mixed oxide powder so that the mixed oxide powder is coated by the carrier, and then roll it to obtain an oxidant slurry.

[0014] Preferably, in S1, a ball mill is used for grinding, and a dispersant and deionized water are added during the grinding process. The rotation speed is 3500-3700 r / min, the grinding time is 40-55 h, and the drying temperature is 120±10℃. The particle size D of the mixed oxide powder is... 50 It is below 0.5μm.

[0015] Preferably, the ethyl cellulose solution in S2 has a mass fraction of 5% to 20%, and the terpineol mass fraction is 80% to 95%.

[0016] Preferably, the ambient temperature for stirring in S2 is 50℃~90℃.

[0017] Preferably, in the oxidant slurry of S3, the mass fraction of the carrier is 35% to 65%, and the mass fraction of the mixed oxide powder is 35% to 65%.

[0018] Preferably, the rolling process in S3 uses a three-roll ball mill, and the rolling process gradually reduces the gap between the rolls to 5μm to 10μm.

[0019] This invention also provides an application of the oxidant slurry prepared above to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates, comprising the following steps:

[0020] S11: After the oxidant slurry is applied to the SrTiO3-based semiconductor ceramic substrate, it is dried to obtain the coated SrTiO3-based semiconductor ceramic substrate.

[0021] S12: The coated SrTiO3-based semiconductor ceramic substrate is placed on a ZrO2 pad, sintered, and then cooled to obtain an oxidized SrTiO3-based semiconductor ceramic substrate.

[0022] S13: After depositing electrodes on both sides of the oxidized SrTiO3-based semiconductor ceramic substrate, the substrate is cut to obtain a sample.

[0023] Preferably, the tool used for coating in S11 is a screen with an aperture size of 150-250 mesh, the drying temperature is 160-200℃, and the drying time is 8-12 min;

[0024] In S12, the coated SrTiO3-based semiconductor ceramic substrate is sintered with the coated surface facing upwards. The sintering temperature is 950–1150℃ and the sintering time is 1–3 hours.

[0025] The electrodes in S13 are silver-plated and / or sputtered gold electrodes.

[0026] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0027] (1) This application uses Bi2O3 as the main material and adds one or more of ZnO, Al2O3, B2O3, CuO, MnO2 and Fe2O3 in trace amounts. The resulting oxidant slurry is conducive to melting into the grain boundaries of SrTiO3-based semiconductor grains during oxidation sintering, and better wetting and coating the semiconducting SrTiO3 grains to form a core-shell structure of a semiconducting core and an insulating shell. The oxidant slurry of this application does not contain heavy metal elements such as Pb and can effectively improve the dielectric strength of the grain boundary layer ceramic material.

[0028] (2) This invention involves mixing Bi2O3 with one or more of B2O3, CuO, MnO2, ZnO, Al2O3, and Fe2O3 in a specific ratio, and grinding the mixture in a ball mill using deionized water as the medium to obtain ultrafine mixed oxide powder. A carrier and the ground mixed oxide powder are taken as a percentage of the total mass, and stirred until the powder is coated with the carrier and no large particles are agglomerated. Then, the mixture is rolled in a three-roll ball mill, gradually reducing the gap between the rollers to 5μm to 10μm, to produce a uniform and qualified oxidant slurry.

[0029] (3) The preparation method of the present invention involves melting a trace amount of additive into the grain boundaries of a SrTiO3-based ceramic substrate under a high-temperature oxidizing atmosphere. The coating oxidant becomes a molten liquid under high temperature of 950℃~1150℃, diffuses through the gaps between grains to the grain boundaries inside the ceramic, fills oxygen vacancies, and promotes Ti... 3+ Ions to Ti 4+ The transformation of ions reduces the number of charge carriers on the grain surface and at grain boundaries, which can effectively reduce the leakage current inside the ceramic under a certain operating voltage and improve the dielectric strength of the ceramic substrate.

[0030] (4) This invention provides a method for preparing oxidant slurry. The oxidant slurry is obtained by rolling on a three-roll ball mill and repeatedly rolling with precise control of the roller gap. The preparation method is simple and uses domestic raw materials. It is free of lead elements and toxic and harmful substances, and is green and environmentally friendly. It can be industrialized and mass-produced. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of the present invention and should not be considered as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort. In the drawings:

[0032] Figure 1 This is a SEM image of the oxidized SrTiO3-based semiconductor ceramic substrate in Example 4 of the present invention;

[0033] Figure 2 This is a graph showing the analysis of dielectric strength test data in Embodiment 4 of the present invention. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.

[0035] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0036] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0037] This invention provides an oxidant slurry for improving the dielectric strength of SrTiO3 semiconductor ceramic substrates, its preparation method, and its application. The preparation method includes the following steps:

[0038] S1: Weigh the main material and additives separately. The main material is Bi2O3, with a mass percentage of 74%–95%. The additives are one or more substances selected from ZnO, Al2O3, B2O3, CuO, MnO2, and Fe2O3, with mass fractions of 5%–8%, 2%–5%, 5%–8%, 2%–5%, and 2%–5%, respectively. After mixing and grinding the raw materials, dry and sieve to obtain a mixed oxide powder. The grinding is performed using a ball mill, with a dispersant and deionized water added during the grinding process. The rotation speed is 3500–3700 r / min, the grinding time is 40–55 h, and the drying temperature is 120±10℃. The particle size D of the mixed oxide powder is... 50 Below 0.5μm;

[0039] S2: Ethyl cellulose solution and terpineol are mixed and stirred to prepare a carrier; wherein the mass fraction of ethyl cellulose solution is 5% to 20%, the mass fraction of terpineol is 80% to 95%, and the stirring temperature is 50℃ to 90℃.

[0040] S3: The carrier and the mixed oxide powder are mixed and stirred so that the mixed oxide powder is coated by the carrier, and then rolled to obtain an oxidant slurry. The rolling process uses a three-roll ball mill, and the rolling process gradually reduces the gap between the rollers to 5μm to 10μm. In the oxidant slurry, the mass fraction of the carrier is 35% to 65%, and the mass fraction of the mixed oxide powder is 35% to 65%.

[0041] The oxidant slurry prepared above is applied to a strontium titanate-based semiconductor ceramic substrate, including the following steps:

[0042] S11: After the oxidant slurry is coated onto the SrTiO3-based semiconductor ceramic substrate, it is dried to obtain the coated SrTiO3-based semiconductor ceramic substrate; wherein, the coating tool is a screen with a aperture size of 150-250 mesh, the drying temperature is 160-200℃, and the drying time is 8-12 min.

[0043] S12: The coated SrTiO3-based semiconductor ceramic substrate is placed on a ZrO2 pad, sintered, and then cooled to obtain an oxidized SrTiO3-based semiconductor ceramic substrate; wherein, during the sintering process, the coated surface of the coated SrTiO3-based semiconductor ceramic substrate faces upward, the sintering temperature is 950-1150℃, and the sintering time is 1-3 hours.

[0044] S13: After preparing top electrodes on both sides of the oxidized SrTiO3-based semiconductor ceramic substrate, cut the substrate to obtain a sample, wherein the electrode is a silver-sputtered and / or gold-sputtered electrode.

[0045] Example 1

[0046] A method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates is provided, comprising the following steps:

[0047] S1: Weigh the main material and additives separately. The main material is Bi₂O₃, with a mass percentage of 85%. The additives are ZnO, Al₂O₃, and B₂O₃, with mass fractions of 6%, 3%, and 6%, respectively. Bismuth trioxide and zinc oxide are electronic grade, while aluminum oxide and boron trioxide are analytical grade. The raw materials are mixed and ground, then dried and sieved to obtain a mixed oxide powder. Grinding is performed using a ball mill with zirconia balls as the grinding medium and deionized water as the solvent. 0.5% of a dispersant is added, and the grinding is carried out at a material:ball:water weight ratio of 1:10:2.5. The grinding speed is 3600 r / min, the grinding time is 48 h, and the drying temperature is 120℃. The particle size of the mixed oxide powder is below 0.5 μm. After drying and sieving (through a 200-mesh sieve), ultrafine mixed oxide powder particles are obtained.

[0048] S2: Ethyl cellulose solution and terpineol are mixed and stirred to prepare a carrier; wherein the mass fraction of ethyl cellulose solution is 5%, the mass fraction of terpineol is 80%, and the stirring temperature is 50℃;

[0049] S3: The carrier and the mixed oxide powder are mixed and stirred to coat the mixed oxide powder with the carrier, and then rolled to obtain an oxidant slurry. The rolling process uses a three-roll ball mill, and the roller gap is gradually reduced to 5μm-10μm. In the oxidant slurry, the mass fraction of the carrier is 65%, and the mass fraction of the mixed oxide powder is 35%.

[0050] Example 2

[0051] A method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates is provided, comprising the following steps:

[0052] S1: Weigh the main material and additives separately. The main material is Bi₂O₃, with a mass percentage of 81%. The additives are ZnO, Al₂O₃, B₂O₃, and CuO, with mass percentages of 6%, 3%, 6%, and 4%, respectively. Bismuth trioxide and zinc oxide are electronic grade, while aluminum trioxide, boron trioxide, and copper oxide are analytical grade. The raw materials are mixed and ground, then dried and sieved to obtain a mixed oxide powder. The grinding is performed using a ball mill with zirconia balls as the grinding medium and deionized water as the solvent. 0.5% of a dispersant is added, and the grinding is carried out at a material:ball:water weight ratio of 1:10:2.5. The milling speed is 3600 r / min, the grinding time is 48 h, and the drying temperature is 120℃. The particle size of the mixed oxide powder is below 0.5 μm. After drying and sieving (through a 200-mesh sieve), ultrafine mixed oxide powder particles are obtained.

[0053] S2: Ethyl cellulose solution and terpineol are mixed and stirred to prepare a carrier; wherein the mass fraction of ethyl cellulose solution is 10%, the mass fraction of terpineol is 85%, and the stirring temperature is 60℃;

[0054] S3: The carrier and the mixed oxide powder are mixed and stirred to coat the mixed oxide powder with the carrier, and then rolled to obtain an oxidant slurry. The rolling process uses a three-roll ball mill, and the roller gap is gradually reduced to 5μm-10μm. In the oxidant slurry, the mass fraction of the carrier is 35%, and the mass fraction of the mixed oxide powder is 65%.

[0055] Example 3

[0056] A method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates is provided, comprising the following steps:

[0057] S1: Weigh the main material and additives separately. The main material is Bi₂O₃, with a mass percentage of 78%. The additives are ZnO, Al₂O₃, B₂O₃, CuO, and MnO₂, with mass percentages of 6%, 3%, 6%, 4%, and 3%, respectively. Bismuth trioxide and zinc oxide are electronic grade, while aluminum trioxide, boron trioxide, copper oxide, and manganese dioxide are analytical grade. The raw materials are mixed and ground, then dried and sieved to obtain a mixed oxide powder. The grinding is performed using a ball mill with zirconia balls as the grinding medium and deionized water as the solvent. 0.5% of a dispersant is added, and the grinding is carried out at a material:ball:water weight ratio of 1:10:2.5. The milling speed is 3600 r / min, the grinding time is 48 h, and the drying temperature is 120℃. The particle size of the mixed oxide powder is below 0.5 μm. After drying and sieving (through a 200-mesh sieve), ultrafine mixed oxide powder particles are obtained.

[0058] S2: Ethyl cellulose solution and terpineol are mixed and stirred to prepare a carrier; wherein the mass fraction of ethyl cellulose solution is 20%, the mass fraction of terpineol is 95%, and the stirring temperature is 90℃;

[0059] S3: The carrier and the mixed oxide powder are mixed and stirred to coat the mixed oxide powder with the carrier, and then rolled to obtain an oxidant slurry. The rolling process uses a three-roll ball mill, and the roller gap is gradually reduced to 5μm-10μm. In the oxidant slurry, the mass fraction of the carrier is 50%, and the mass fraction of the mixed oxide powder is 50%.

[0060] Example 4

[0061] A method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates is provided, comprising the following steps:

[0062] S1: Weigh the main material and additives separately. The main material is Bi₂O₃, with a mass percentage of 74%. The additives are ZnO, Al₂O₃, B₂O₃, CuO, MnO₂, and Fe₂O₃, with mass percentages of 6%, 3%, 6%, 4%, 3%, and 4%, respectively. Bismuth trioxide and zinc oxide are electronic grade, while aluminum trioxide, boron trioxide, copper oxide, manganese dioxide, and ferric oxide are analytical grade. The raw materials are mixed and ground, then dried and sieved to obtain a mixed oxide powder. The grinding is performed using a ball mill with zirconia balls as the grinding medium, deionized water as the solvent, and 0.5% (by mass) of dispersant added, at a material:ball:water weight ratio of 1:10:2.5. The rotation speed is 3600 r / min, the grinding time is 48 h, the drying temperature is 120℃, and the particle size of the mixed oxide powder is below 0.5 μm. After drying and sieving (through a 200 mesh sieve), ultrafine mixed oxide powder is obtained.

[0063] S2: Ethyl cellulose solution and terpineol are mixed and stirred to prepare a carrier; wherein the mass fraction of ethyl cellulose solution is 20%, the mass fraction of terpineol is 95%, and the stirring temperature is 90℃;

[0064] S3: The carrier and the mixed oxide powder are mixed and stirred to coat the mixed oxide powder with the carrier, and then rolled to obtain an oxidant slurry. The rolling process uses a three-roll ball mill, and the roller gap is gradually reduced to 5μm-10μm. In the oxidant slurry, the mass fraction of the carrier is 50%, and the mass fraction of the mixed oxide powder is 50%.

[0065] Experimental results

[0066] The oxidant slurries obtained in Examples 1-4 were used on the same SrTiO3 semiconductor ceramic substrate to prepare the products. The specific method is as follows:

[0067] S11: After the oxidant slurry is coated onto the SrTiO3-based semiconductor ceramic substrate, it is dried to obtain the coated SrTiO3-based semiconductor ceramic substrate; wherein, the coating tool is a screen with a aperture size of 150-250 mesh, the drying temperature is 160-200℃, and the drying time is 8-12 min.

[0068] S12: The coated SrTiO3-based semiconductor ceramic substrate is placed on a ZrO2 pad, sintered, and then cooled to obtain an oxidized SrTiO3-based semiconductor ceramic substrate; wherein, during the sintering process, the coated surface of the coated SrTiO3-based semiconductor ceramic substrate faces upward, the sintering temperature is 950-1150℃, and the sintering time is 1-3 hours.

[0069] S13: After preparing top electrodes on both sides of the oxidized SrTiO3-based semiconductor ceramic substrate, cut the substrate to obtain a sample, wherein the electrode is a silver-sputtered and / or gold-sputtered electrode.

[0070] The dielectric properties of the samples corresponding to Examples 1-4 were tested. The substrate with dimensions of 25.4×25.4×0.25mm was cut into 10mm*10mm samples. The results are shown in Table 1.

[0071] Table 1 Dielectric properties of oxidant formulations

[0072]

[0073] Table 2 shows the electrical strength test data of the oxidant formulation in Example 4, including comparisons of the following 30 samples. (See line graph below.) Figure 2 :

[0074] Table 2. Electrotensile strength test data for oxidant formulation in Example 4.

[0075]

[0076] Figure 1 The images shown are SEM images of the oxidized SrTiO3-based semiconductor ceramic substrate in Example 4 of this invention, as shown in Tables 1-2 and 3-4. Figure 2 It can be seen that when the oxidant slurry prepared by the method of the present invention is applied to a strontium titanate-based semiconductor ceramic substrate, the resulting product has a dielectric constant of approximately 25000±10% and a dielectric loss of 0.33×10⁻⁶. -2 ~0.80×10 -2 The capacitance changes with temperature at a rate of (0±25)%, and its dielectric strength reaches up to 4000V / mm.

[0077] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An oxidant slurry for improving the dielectric strength of SrTiO3 semiconductor ceramic substrates, characterized in that, The product is prepared from a main material and additives. The main material is Bi2O3, with a mass percentage of 74%. The additives are ZnO, Al2O3, B2O3, CuO, MnO2, and Fe2O3, with mass percentages of 6%, 3%, 6%, 4%, 3%, and 4%, respectively.

2. A method for preparing an oxidant slurry to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates, characterized in that, Includes the following steps: S1: Weigh the raw materials of the oxidant slurry according to claim 1, mix and grind the raw materials, and then dry and sieve them to obtain mixed oxidant powder; S2: The carrier is prepared by mixing and stirring ethyl cellulose solution and terpineol; S3: Mix and stir the carrier and the mixed oxide powder so that the mixed oxide powder is coated by the carrier, and then roll it to obtain an oxidant slurry.

3. The method for preparing an oxidant slurry to improve the dielectric strength of a SrTiO3 semiconductor ceramic substrate according to claim 2, characterized in that, In S1, a ball mill is used for grinding. A dispersant and deionized water are added during the grinding process. The rotation speed is 3500~3700 r / min, the grinding time is 40~55 h, and the drying temperature is 120±10℃. The particle size D of the mixed oxide powder is... 50 It is below 0.5μm.

4. The method for preparing an oxidant slurry to improve the dielectric strength of a SrTiO3 semiconductor ceramic substrate according to claim 2, characterized in that, In S2, the mass fraction of ethyl cellulose solution is 5%~20%, and the mass fraction of terpineol is 80%~95%.

5. The method for preparing an oxidant slurry to improve the dielectric strength of a SrTiO3 semiconductor ceramic substrate according to claim 2, characterized in that, The ambient temperature for stirring in S2 is 50℃~90℃.

6. The method for preparing an oxidant slurry to improve the dielectric strength of a SrTiO3 semiconductor ceramic substrate according to claim 2, characterized in that, In the S3 oxidant slurry, the mass fraction of the carrier is 35%~65%, and the mass fraction of the mixed oxide powder is 35%~65%.

7. The method for preparing an oxidant slurry to improve the dielectric strength of a SrTiO3 semiconductor ceramic substrate according to claim 2, characterized in that, The rolling process in S3 uses a three-roll ball mill, and the rolling process gradually reduces the gap between the rolls to 5μm~10μm.

8. The application of an oxidant slurry prepared according to any one of claims 2-7 to improve the dielectric strength of SrTiO3 semiconductor ceramic substrates, characterized in that, Includes the following steps: S11: After the oxidant slurry is applied to the SrTiO3-based semiconductor ceramic substrate, it is dried to obtain the coated SrTiO3-based semiconductor ceramic substrate. S12: The coated SrTiO3-based semiconductor ceramic substrate is placed on a ZrO2 pad, sintered, and then cooled to obtain an oxidized SrTiO3-based semiconductor ceramic substrate. S13: After preparing top electrodes on both sides of the oxidized SrTiO3-based semiconductor ceramic substrate, cut the substrate to obtain a sample.

9. The application of the oxidant slurry for improving the dielectric strength of SrTiO3 semiconductor ceramic substrates according to claim 8, characterized in that, The tool used for coating in S11 is a screen with a mesh size of 150~250, the drying temperature is 160~200℃, and the drying time is 8~12min; In S12, the coated SrTiO3-based semiconductor ceramic substrate is sintered with the coated surface facing upwards. The sintering temperature is 950~1150℃ and the sintering time is 1~3 hours. The electrodes in S13 are silver-plated and / or sputtered gold electrodes.

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