An interconnection structure and a transceiver module containing the interconnection structure

Abstract

The present invention provides an interconnection structure and a transceiver module containing the interconnection structure. The interconnection structure includes: a first passive input terminal and a first passive output terminal for K-band or horizontal polarization, as well as a control input terminal and a control output terminal; the first passive input terminal is electrically connected to the first passive output terminal; the control input terminal is electrically connected to the control output terminal; the first passive input terminal and the first passive output terminal, and the control input terminal and the control output terminal belong to different dielectric layers. The present invention solves the problem that the chip area is greatly increased due to the significant increase in the single-channel output power of the TR module, resulting in insufficient internal space of the module and the inability to interconnect high and low frequencies.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to an interconnection structure and a transceiver module containing the interconnection structure. Background Art

[0002] The phased array antenna is the core component that determines the performance of the entire system in the phased array radar / communication system, and the core component of the active phased array antenna is the transceiver module (TR module), which accounts for a large proportion of the weight of the entire system, as well as most of the power consumption and cost.

[0003] As the requirements for radar power become higher and higher, multi-frequency compounding or dual-polarization work is required. Multi-frequency compounding means a longer detection distance and a more accurate detection position, and multi-polarization can make the characteristics of the detected target more obvious. In order to achieve multi-frequency compounding or dual-polarization work, the single-channel output power of the TR module is required to be greatly increased to meet the demand. However, when the single-channel output power of the TR module is increased, the problem brought about is: the space of the existing TR module must be expanded, and expanding the space of the existing TR module will cause the channel spacing to be too large, thereby affecting the radar scanning angle and the occurrence of grating lobes and other problems. Specifically, inside the TR module, under the premise that the antenna channel spacing remains unchanged, a larger high-power chip needs to be placed, and placing a larger high-power chip will inevitably increase the space of the existing TR module; or within a fixed area, it is usually a single frequency or a single polarization in the past, and two frequencies or two polarizations need to be placed to increase the power, so it is required that after placing two frequencies or two polarizations, there is still a requirement for isolation. For example: after theoretical calculation, the width dimension of a module that needs to realize a certain function is certain. When the function is single and the power is small, there is enough space in the width direction to place the chip and the planar microstrip line and the metal shielding wall. However, after the power is increased, the chip size is usually doubled when the power is doubled. If the frequency and polarization mode are to be increased, the space in the width direction will be even more insufficient. Summary of the invention

[0004] The purpose of the present invention is to solve the defects of the above-mentioned prior art and provide an interconnection structure and a transceiver module containing the interconnection structure.

[0005] An interconnection structure includes: a first passive input terminal and a first passive output terminal for K-band or horizontal polarization, and a control input terminal and a control output terminal;

[0006] The first passive input terminal is electrically connected to the first passive output terminal; the control input terminal is electrically connected to the control output terminal; the first passive input terminal and the first passive output terminal, and the control input terminal and the control output terminal belong to different dielectric layers.

[0007] Furthermore, the interconnection structure as described above further includes a second passive input terminal and a second passive output terminal for Ka band or vertical polarization, as well as a power supply input terminal and a power supply output terminal;

[0008] The passive second input terminal and the second passive output terminal are electrically connected; the power supply input terminal and the power supply output terminal are electrically connected;

[0009] The power supply input terminal and the power supply output terminal are in the same dielectric layer as the control input terminal and the control output terminal; the second passive input terminal and the second passive output terminal belong to different dielectric layers from the first passive input terminal and the first passive output terminal;

[0010] Shielding grounding holes are distributed on both sides of the wiring connecting the first passive input terminal and the first passive output terminal, and on both sides of the wiring connecting the second passive input terminal and the second passive output terminal.

[0011] Furthermore, in the interconnection structure described above, a passive filtering circuit for suppressing various frequencies is integrated on the wiring of each input and output end.

[0012] Furthermore, as described above, the interconnection structure is in an L-shape, a cross-shape, a field-shape or a square-shape.

[0013] A transceiver module containing the interconnection structure as described above comprises a structural cavity on which the interconnection structure is arranged.

[0014] Further, in the transceiver module as described above, the interconnection structure is an L-shaped interconnection structure; each L-shaped interconnection structure is correspondingly provided with a switch chip, a power amplifier chip, a chip, a first transfer microstrip, a first transmission microstrip, a second transfer microstrip, a third transfer microstrip, a fourth transfer microstrip, and a fifth transfer microstrip;

[0015] A first external connector is provided at the end of the first transfer microstrip, and a second external connector is provided at the end of the fifth transfer microstrip; a third external connector is provided at the end of the first passive output end; a transmission signal input source and a wave control power supply control component are provided at one end of the second transfer microstrip;

[0016] The switch chip is electrically connected to the power amplifier chip via a first transmission microstrip, and the power amplifier chip is electrically connected to the chip via a second transfer microstrip; the chip is electrically connected to the second passive input terminal via a third transfer microstrip; the chip is also electrically connected to a fifth transfer microstrip, and the second external connector on the fifth transfer microstrip is used to output the radio frequency signal;

[0017] The first external connector is electrically connected to the switch chip via a first transfer microstrip; the switch chip is electrically connected to the second passive output terminal; and the first passive input terminal is electrically connected to the chip via a third transfer microstrip.

[0018] Further, in the transceiver module as described above, the interconnection structure is a cross-shaped interconnection structure;

[0019] The cross-shaped interconnection structure divides the structural cavity into four quadrants, and each quadrant is provided with: a radio frequency chip, a power modulation chip, and a wave control chip; the cross-shaped interconnection structure is provided with: a radio frequency horizontal input port microstrip, a radio frequency vertical input port, a low-frequency power supply control connector, a first radio frequency interface, and a low-frequency power supply pad;

[0020] The second passive input end is arranged at the horizontal end of the cross-shaped interconnection structure, and the second passive output end is arranged on the horizontal side wall of the cross-shaped interconnection structure; the RF horizontal input port microstrip is electrically connected to the second passive input end.

[0021] Further, in the transceiver module as described above, the interconnection structure is a square-shaped interconnection structure;

[0022] The structural cavity is composed of a metal cover plate, a metal carrier plate and a U-shaped interconnected structure sintered and sealed;

[0023] An active chip is also arranged in the structural cavity; the active chip is electrically connected to a second radio frequency interface and a low-frequency power supply control interface arranged on the square-shaped interconnection structure through bonding metal wires.

[0024] Beneficial effects:

[0025] 1. The present invention can solve the problem of insufficient internal space of the module and inability to interconnect high and low frequencies due to the substantial increase in chip area caused by the substantial increase in single-channel output power of the TR module;

[0026] 2. The present invention can solve the problem of insufficient internal space of the module and inability to interconnect high and low frequencies due to the substantial increase in the single-channel output power of the TR module while increasing the antenna polarization or increasing the antenna frequency;

[0027] 3. The present invention can solve the problems of poor channel isolation and inconvenience in high- and low-frequency interconnection caused by high-density layout of TR modules;

[0028] 4. The present invention can solve the problem of interconnection and airtightness of high and low frequency signals inside and outside the TR module. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 It is a schematic diagram of the interconnection structure provided by the present invention;

[0031] Figure 2 is a cross-sectional view of the interconnection structure provided by the present invention;

[0032] FIG3( a ) is a structural diagram of a brick-type TR module provided by the present invention;

[0033] FIG3( b ) is a partial enlarged view of the dotted frame in FIG3( a );

[0034] FIG4( a ) is a structural diagram of a cross-shaped TR module provided by the present invention;

[0035] FIG4( b ) is a partial enlarged view within the dotted frame of FIG4( a );

[0036] Figure 5 It is a structural diagram of a square-shaped TR module provided by the present invention;

[0037] Figure 6 This is a cross-sectional view of a square-shaped TR module provided by the present invention;

[0038] Description of reference numerals:

[0039] 1-high and low frequency interconnection structure; 2-first structural cavity; 3-4-channel tile module; 4-high and low frequency multifunctional interconnection structure;

[0040] 11-first passive input terminal; 12-first passive output terminal; 20-third external connector; 13-second passive input terminal; 14-second passive output terminal; 15-control input terminal; 16-control output terminal; 17-shielding grounding hole; 18-power input terminal; 19-power output terminal; 21-switch chip; 22-power amplifier chip; 23-chip; 24-first transfer microstrip; 241-first external connector; 25-first transmission microstrip; 26-second transfer microstrip; 261-transmitting signal input source and wave control power supply control component; 27-third transfer microstrip; 28-fourth Transfer microstrip; 29-fifth transfer microstrip; 291-second external connector; 31-RF chip; 311-low-frequency power supply pad; 32-power modulation chip; 33-wave control chip; 34-cross-shaped interconnection structure; 35-RF horizontal input port microstrip; 36-second structural cavity; 37-RF vertical input port; 38-low-frequency power supply control connector; 39-first RF interface; 41-U-shaped interconnection structure; 42-active chip; 43-second RF interface; 44-low-frequency power supply control interface; 45-metal cover plate; 46-bonding wire; 47-metal carrier plate;

[0041] 120-copper layer one; 121-dielectric layer one; 122 copper layer two; 123-PP layer one; 124-copper layer three; 125-dielectric layer two; 126-copper layer four; 127-PP layer two; 128-copper layer five; 129-dielectric layer three; 130-copper layer six; 131-PP layer three; 132-copper layer seven; 133-dielectric layer four; 134-copper layer eight. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] Aiming at the increasing power, frequency and polarization requirements of radar communication systems, the present invention provides a high- and low-frequency multifunctional interconnection structure, which solves the problem of insufficient space for TR modules when the single-channel output power of the TR modules is increased by arranging high-frequency and low-frequency lines in multiple layers.

[0044] Generally, metal shielding walls are added between different channels to increase the isolation between channels. The thickness of the metal shielding walls is ≥ 0.8 mm. However, after the present invention is changed to place two frequencies or two polarizations, the assembly size of a single channel becomes larger, resulting in the thickness of the shielding walls of adjacent channels becoming thinner. Limited by the existing machining process, the maximum thickness of the shielding wall can be processed to 0.5 mm. Therefore, under the multi-polarization limit state, the partition wall cannot be processed. Therefore, the high and low frequency interconnection structure provided by the present invention, such as Figure 1 As shown, the high-low frequency interconnection structure 1 includes: a first passive input terminal 11 and a first passive output terminal 12 for K band or horizontal polarization, as well as a control input terminal 15, a control output terminal 16, and a shielding grounding hole 17; the first passive input terminal 11 is electrically connected to the first passive output terminal 12; the control input terminal 15 is electrically connected to the control output terminal 16; the first passive input terminal 11 and the first passive output terminal 12, and the control input terminal 15 and the control output terminal 16 belong to different dielectric layers; the shielding grounding hole 17 is distributed on both sides of the wiring connecting the first passive input terminal 11 and the first passive output terminal 12.

[0045] In the interconnection structure provided by the present invention, a K-band or horizontally polarized radio frequency signal is input from a first passive input terminal 11 and output from a first passive output terminal 12, and a control signal is input from a control input terminal 15 and output from a control output terminal 16. The high and low frequency circuits in the interconnection structure are passive reciprocal circuits, and the input terminal and the output terminal are interchangeable.

[0046] Furthermore, the interconnection structure provided by the present invention further includes a second passive input terminal 13 and a second passive output terminal 14 for Ka band or vertical polarization, as well as a power supply input terminal 18 and a power supply output terminal 19; the second passive input terminal 13 and the second passive output terminal 14 are electrically connected; the power supply input terminal 18 and the power supply output terminal 19 are electrically connected;

[0047] The power supply input terminal 18 and the power supply output terminal 19 are in the same dielectric layer as the control input terminal 15 and the control output terminal 16; the second passive input terminal 13 and the second passive output terminal 14 are in different dielectric layers as the first passive input terminal 11 and the first passive output terminal 12;

[0048] Shielding grounding holes 17 are distributed on both sides of the wiring connecting the first passive input terminal 11 and the first passive output terminal 12 , and on both sides of the wiring connecting the second passive input terminal 13 and the second passive output terminal 14 .

[0049] like Figure 2As shown, the interconnect structure includes, from top to bottom, copper layer one 120, dielectric layer one 121, copper layer two 122, PP layer one 123, copper layer three 124, dielectric layer two 125, copper layer four 126, PP layer two 127, copper layer five 128, dielectric layer three 129, copper layer six 130, PP layer three 131, copper layer seven 132, dielectric layer four 133, and copper layer eight 134; the dielectric layer one 121 and the dielectric layer two 125 are pressed together through the PP layer one 123, the dielectric layer two 125 and the dielectric layer three 129 are pressed together through the PP layer two 127, and the dielectric layer three 129 and the dielectric layer four 133 are pressed together through the PP layer three 131 to form a board.

[0050] The power input terminal 18, the power output terminal 19, the control input terminal 15, and the control output terminal 16 are arranged on the dielectric layer 121. The control input terminal 15 and the control output terminal 16 are electrically connected through the wiring arranged on the copper layer 120; the power input terminal 18 and the power output terminal 19 are electrically connected through the wiring arranged on the copper layer 120.

[0051] The dielectric layer two 125 is coated on both sides with: copper layer three 124 and copper layer four 126, and the copper layer three 124 and copper layer four 126 are both ground layers; the first passive input terminal 11 and the first passive output terminal 12 are arranged on the dielectric layer four 133, and the first passive input terminal 11 and the first passive output terminal 12 are electrically connected through the routing arranged on the copper layer seven 132, and shielding grounding holes 17 are respectively arranged on both sides of the routing of the copper layer seven 132.

[0052] The second passive input terminal 13 and the second passive output terminal 14 are arranged on the dielectric layer three 129, and the second passive input terminal 13 and the second passive output terminal 14 are electrically connected through a wiring arranged on the copper layer five 128; and shielding grounding holes 17 are also respectively arranged on both sides of the wiring of the copper layer five 128.

[0053] Furthermore, a passive filtering circuit for suppressing various frequencies is integrated on the wiring of each input and output terminal.

[0054] Figure 1 The application scenarios of the high- and low-frequency multifunctional interconnection structure shown can be divided into the following two states:

[0055] Application scenario 1: The module is a dual-band composite, that is, there are K band and Ka band.

[0056] The K-band RF signal is input from the first passive input terminal 11 and output from the first passive output terminal 12. The Ka-band is input from the second passive input terminal 13 and output from the second passive output terminal 14. The control signal is input from the control input terminal 15 and output from the control output terminal 16. The DC power is input from the power supply input terminal 18 and output from the power supply output terminal 19. The shielded grounding hole 17 increases the isolation between the transmission lines to prevent the K-band and the Ka-band from interfering with each other. In addition, the intermediate wiring part of each input and output terminal can also integrate a passive filtering circuit to suppress the frequencies. The form of the filter is not limited to microstrip filters, but also includes ceramic multilayer cavity filters and other forms.

[0057] Application scenario 2: The module is dual-polarization composite, that is, there are horizontal polarization and vertical polarization.

[0058] The horizontally polarized RF signal is input from the first passive input terminal 11 and output from the first passive output terminal 12; the vertically polarized RF signal is input from the second passive input terminal 13 and output from the second passive output terminal 14. The control signal is input from the control input terminal 15 and output from the control output terminal 16, and the direct current is input from the power supply input terminal 18 and output from the power supply output terminal 19. The shielded grounding hole 17 increases the isolation between the transmission lines to prevent the horizontal polarization and the vertical polarization from interfering with each other, and the intermediate wiring part of each input and output terminal can also integrate a passive filtering circuit to suppress the frequencies. The form of the filter is not limited to microstrip filters, but also includes ceramic multilayer cavity filters and the like.

[0059] The interconnection structure provided by the embodiment of the present invention has high and low frequency circuits in the interconnection structure as passive reciprocal circuits, and the input end and the output end are interchangeable. When only one frequency or one polarization operation is required, the transmission line of the first passive input end 11 and the first passive output end 12 can be reduced according to the usage scenario, and the transmission line of the second passive input end 13 and the second passive output end 14 can also be reduced. When only a low-frequency control line is required, only the control input end 15 and the control output end 16 are retained, or only the power supply input end 18 and the power supply output end 19 are retained.

[0060] The interconnection structure provided by the present invention can be expanded into a multifunctional structure with multi-frequency, multi-polarization and low-frequency interconnection as long as the space, performance and processing technology meet the requirements.

[0061] It should be noted that the interconnection structure provided by the present invention is not limited to Figure 1 The shape and stacking diagram shown are explained below through three implementation cases. Any case in which high and low frequency interconnection functions can be achieved through such characteristic structures belongs to the protection scope of the present invention.

[0062] Embodiment 1

[0063] As shown in Figure 3(a) and Figure 3(b), the TR module is a dual-polarization receiving high-power transmitting type TR module, which includes 4 Figure 1 The interconnection structure shown in FIG. 1 includes:

[0064] A first structural cavity 2 is provided with four interconnection structures arranged in parallel in the first structural cavity 2, and each interconnection structure is correspondingly provided with a switch chip 21, a power amplifier chip 22, a chip 23, a first transfer microstrip 24, a first transmission microstrip 25, a second transfer microstrip 26, a third transfer microstrip 27, a fourth transfer microstrip 28, and a fifth transfer microstrip 29; a first external connector 241 is provided at the end of the first transfer microstrip 24, and a second external connector 291 is provided at the end of the fifth transfer microstrip 29; a third external connector 20 is provided at the end of the first passive output end 12; and a transmission signal input source and a wave-controlled power supply control component 261 are provided at one end of the second transfer microstrip 26.

[0065] Four transfer microstrips are arranged on the chip 23, namely the second transfer microstrip 26, the third transfer microstrip 27, the fourth transfer microstrip 28 and the fifth transfer microstrip 29; the second transfer microstrip 26 is used to electrically connect the chip 23 and the power amplifier chip 22; the third transfer microstrip 27 is used to electrically connect the second passive input terminal 13 and the chip 23, and the fourth transfer microstrip 28 is used to electrically connect the first passive input terminal 11 and the chip 23; the fifth transfer microstrip 29 is used to output the radio frequency signal through the second external connector 291.

[0066] The first external connector 241 is electrically connected to the switch chip 21 through the first transfer microstrip 24; the switch chip 21 is electrically connected to the second passive output terminal 14; the second passive input terminal 13 is electrically connected to the chip 23 through the third transfer microstrip 27; the chip 23 outputs the RF signal through the second external connector 291;

[0067] The switch chip 21 is electrically connected to the power amplifier chip 22 via a first transmission microstrip 25 , and the chip 23 is electrically connected to the power amplifier chip 22 via a second transfer microstrip 26 .

[0068] The working principle of the TR module shown in Figure 3 is:

[0069] When the system issues a command to receive horizontal polarization signal transmission, the RF signal needs to be input from the horizontal polarization port. At this time, the RF signal transmission route is to enter from the third external connector 20, enter through the RF input terminal (first passive output terminal 12), output from the RF output terminal (first passive input terminal 11), enter the multi-function chip 23 through the fourth switching microstrip 28, and enter the second external connector 291 through the fifth switching microstrip 29 for output.

[0070] When the system issues a command to receive vertical polarization signal transmission, the RF signal transmission route is as follows: the RF signal enters from the first external connector 241, enters the RF input terminal (second passive output terminal 14) through the switch chip 21, is output from the RF output terminal (second passive input terminal 13), enters the multi-function chip 23 through the third switching microstrip 27, and enters the second external connector 291 through the fifth switching microstrip 29 for output.

[0071] When the system issues a command to transmit a signal output from the vertical polarization port, the RF signal transmission direction is: input from the second external connector 291, through the fifth transfer microstrip 29, enter the multi-function chip 23, and then through the second transfer microstrip 26, enter the power amplifier chip 22, and then through the first transmission microstrip 25, enter the switch chip 21, after the switch is switched (the system issues a control instruction to switch the switch to the transmitting state), it passes through the first transfer microstrip 24 and enters the first external connector 241 for output.

[0072] In this embodiment, horizontal polarization and vertical polarization are interchangeable.

[0073] In this TR module, the output power of a single-channel high-power chip exceeds 60W, and the chip width is 2 to 3 times that of previous chips, while the module size remains unchanged. Figure 1 The high- and low-frequency interconnection structure shown is used to interconnect high-frequency signals and low-frequency signals.

[0074] The TR module structure shown in FIG3(a) is only an example to illustrate that the high-power dual-polarization requirement of the TR module can be achieved through the high- and low-frequency multifunctional interconnection structure of the present invention in this embodiment. The structural position of the high-frequency and low-frequency lines on the high- and low-frequency multifunctional interconnection structure can be modulated according to actual needs, and is not limited to the dual-polarization field, and dual-frequency or multi-frequency can also be achieved.

[0075] Embodiment 2

[0076] Figure 4(a) is a structural diagram of the cross-shaped TR module provided by the present invention; Figure 4(b) is a local enlarged diagram within the dotted frame of Figure 4(a); as shown in Figures 4(a) and 4(b), the cross-shaped TR module includes: a second structural cavity 36, on which are arranged a 4-channel tile module 3, an RF chip 31, a power modulation chip 32, a wave control chip 33, a cross-shaped interconnection structure 34, an RF horizontal input port microstrip 35, an RF vertical input port 37, a low-frequency power supply control connector 38, a first RF interface 39, and a low-frequency power supply pad 311.

[0077] When the TR module provided in this embodiment works, each quadrant is an independent radio frequency unit, which has corresponding functional chips and supporting components inside. It can be directly sintered on the base of the second structural cavity 36 through the cross-shaped interconnection structure 34, replacing the conventional metal isolation cavity. Moreover, the low-frequency power supply control signal can be accessed from the low-frequency power supply control connector 38, and each quadrant device is powered and controlled through numerous surrounding low-frequency power supply pads 311. In this way, the traditional power supply adapter board can be saved while ensuring the channel isolation degree; the feeding of the radio frequency signal can be input through the microstrip of the radio frequency horizontal input port 35 on the side wall to the first radio frequency interface 39 at any position on the cross-shaped interconnection structure 34, and then be matched and connected with the corresponding radio frequency chip; the radio frequency signal can also be fed in from the radio frequency vertical input port 37, and after the power is distributed by the internal power distribution network, it is fed into the radio frequency chips of each quadrant from the first radio frequency interface 39 at any position.

[0078] This structure is also applicable to high-power multi-frequency multi-polarization TR modules. Since the cross-shaped interconnection structure 34 replaces the traditional metal slots, partitions, and power supply adapter boards, the area available for the chips is larger, the power of the obtained chips is greater, the chip functions are more, and the multi-directional radio frequency port feeding points can realize the feeding of multi-frequency and multi-polarization signals, and the multi-directional power supply interfaces are also convenient for the power supply and control of the surrounding chips.

[0079] Figure 4(a) only exemplifies a layout of the tile-type TR module with high power, multi-frequency, and multi-polarization. The layout positions of the internal chips can be adjusted according to the actual situation, and the shape of the cross-shaped interconnection structure 34 can also be adjusted according to the actual situation, such as the shape of a "field" or a "square", etc. Similar structures and functions all fall within the scope of the content of the present invention.

[0080] Embodiment Three

[0081] See Figure 5 And Figure 6 Refer to, this embodiment exemplifies a hermetic high-low frequency multi-functional interconnection structure 4. The high-low frequency multi-functional interconnection structure 4 includes a third structural cavity, which is formed by sintering and sealing a metal cover plate 45, a metal carrier plate 47, and a square-shaped interconnection structure 41; an active chip 42 is further arranged in the third structural cavity; the active chip 42 is electrically connected to the second radio frequency interface 43 and the low-frequency power supply control interface 44 arranged on the square-shaped interconnection structure 41 through bonding metal wires 46.

[0082] This embodiment uses hermetic ceramic materials and can adopt processes such as LTCC and HTCC.

[0083] The TR module provided in this embodiment can be used for interconnection between high and low frequency functional modules that require airtightness. For example, a functional unit chipset can be encapsulated inside the structure, which contains various required active chips 42, such as RF chips, digital-analog chips, power chips, etc. The second RF interface 43 and the low-frequency power supply control interface 44 bonded inside by metal wires are interconnected with the second RF interface 43 and the low-frequency power supply control interface at any position outside, and finally airtightness is achieved by sintering the metal carrier plate 47 and the metal cover plate 45.

[0084] This functional unit can independently implement certain specific functions and then be interconnected with the upper-level system circuit through external high and low frequency interfaces, meeting the effective isolation between multi-functions, multi-channels, multi-frequencies, and multi-polarizations, while also achieving the airtightness of the chip, thus realizing the high integration and multi-function airtightness requirements of the module.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An interconnection structure, characterized in that: include: A first passive input terminal (11) and a first passive output terminal (12) for K-band or horizontal polarization, as well as a control input terminal (15) and a control output terminal (16); The first passive input end (11) is electrically connected to the first passive output end (12); the control input end (15) is electrically connected to the control output end (16); the first passive input end (11) and the first passive output end (12) and the control input end (15) and the control output end (16) belong to different dielectric layers.

2. The interconnection structure according to claim 1, characterized in that: It also includes a second passive input terminal (13) and a second passive output terminal (14) for Ka band or vertical polarization, as well as a power supply input terminal (18) and a power supply output terminal (19); The passive second input terminal (13) and the second passive output terminal (14) are electrically connected; the power supply input terminal (18) and the power supply output terminal (19) are electrically connected; The power supply input end (18) and the power supply output end (19) are in the same dielectric layer as the control input end (15) and the control output end (16); the second passive input end (13) and the second passive output end (14) are in different dielectric layers as the first passive input end (11) and the first passive output end (12); Shielding grounding holes (17) are distributed on both sides of the wiring connecting the first passive input terminal (11) and the first passive output terminal (12), and on both sides of the wiring connecting the second passive input terminal (13) and the second passive output terminal (14).

3. The interconnection structure according to claim 2, characterized in that: Passive filtering circuits are also integrated on the traces of each input and output to suppress various frequencies.

4. The interconnection structure according to claim 3, characterized in that: The interconnection structure is in an L-shape, a cross-shape, a field-shape or a square-shape.

5. A transceiver module comprising the interconnection structure according to claim 4, characterized in that: It comprises a structural cavity, on which the interconnection structure is arranged.

6. The transceiver module according to claim 5, characterized in that: The interconnection structure is an L-shaped interconnection structure; each L-shaped interconnection structure is correspondingly provided with a switch chip (21), a power amplifier chip (22), a chip (23), a first transfer microstrip (24), a first transmission microstrip (25), a second transfer microstrip (26), a third transfer microstrip (27), a fourth transfer microstrip (28), and a fifth transfer microstrip (29); A first external connector (241) is provided at the end of the first transfer microstrip (24), and a second external connector (291) is provided at the end of the fifth transfer microstrip (29); a third external connector (20) is provided at the end of the first passive output end (12); and a transmission signal input source and a wave-controlled power supply control component (261) are provided at one end of the second transfer microstrip (26); The switch chip (21) and the power amplifier chip (22) are electrically connected via a first transmission microstrip (25), and the power amplifier chip (22) and the chip (23) are electrically connected via a second transfer microstrip (26); the chip (23) and the second passive input end (13) are electrically connected via a third transfer microstrip (27); the chip (23) is also electrically connected to a fifth transfer microstrip (29), and the second external connector (291) on the fifth transfer microstrip (29) is used to output a radio frequency signal; The first external connector (241) is electrically connected to the switch chip (21) via a first transfer microstrip (24); the switch chip (21) is electrically connected to the second passive output terminal (14); and the second passive input terminal (13) is electrically connected to the chip (23) via a third transfer microstrip (27).

7. The transceiver module according to claim 5, characterized in that: The interconnection structure is a cross-shaped interconnection structure (34); The cross-shaped interconnection structure (34) divides the structural cavity into four quadrants, and each quadrant is provided with: a radio frequency chip (31), a power modulation chip (32), and a wave control chip (33); and the cross-shaped interconnection structure (34) is provided with: a radio frequency horizontal input port microstrip (35), a radio frequency vertical input port (37), a low-frequency power supply control connector (38), a first radio frequency interface (39), and a low-frequency power supply pad (311); The second passive input end (13) is arranged at a horizontal end of the cross-shaped interconnection structure (34), and the second passive output end (14) is arranged on a horizontal side wall of the cross-shaped interconnection structure (34); the radio frequency horizontal input port microstrip (35) is electrically connected to the second passive input end (13).

8. The transceiver module according to claim 5, characterized in that: The interconnection structure is a square-shaped interconnection structure (41); The structural cavity is formed by sintering and sealing a metal cover plate (45), a metal carrier plate (47) and a square-shaped interconnection structure (41); An active chip (42) is also provided in the structural cavity; the active chip (42) is electrically connected to a second radio frequency interface (43) and a low-frequency power supply control interface (44) provided on the square-shaped interconnection structure (41) through a bonding metal wire (46).

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