An acoustic resonator structure and its preparation method, recording medium and system

Abstract

The present invention belongs to the field of semiconductor device technology, and particularly relates to a method for preparing an acoustic resonator structure. By configuring a fin module with a pre-set size, the resonator can provide a natural frequency that matches the measurement, and because the fin module provides an additional electrical / mechanical conversion area, the wafer area occupied by the traditional two-dimensional structure is smaller under the same performance, which greatly improves the integration; the polarization state of the hafnium zirconium oxide-aluminum oxide superlattice structure can be changed by adjusting the external electric field, thereby further changing the natural frequency, and jointly expanding the adjustable frequency range of the resonator; at the same time, covering the hafnium zirconium oxide-aluminum oxide superlattice with a tungsten layer ensures the uniformity of the applied electric field. The present invention also provides a non-transient readable recording medium storing the method program and a system containing the medium, and the program can be called by a processing circuit to execute the above method.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor devices and discloses an acoustic resonator structure and a preparation method, a recording medium and a system thereof. Background Art

[0002] As a cutting-edge technology in the field of contemporary scientific research, nanoacoustic resonators are gradually showing their potential for wide application in precision sensing, quantum information processing, micro-nano electromechanical systems (MEMS / NEMS) and materials science. By utilizing their unique ability to manipulate sound waves at the nanoscale, these tiny devices can achieve extremely high-sensitivity molecular detection in the biomedical field, serve as a bridge for the interaction between phonons and quantum bits in quantum technology, and serve as key components for high-frequency filtering and frequency control in MEMS technology, as well as presenting new opportunities in thermal management and energy conversion.

[0003] A significant increase in the integration of nanoacoustic resonators is an important development direction, because the increase in integration can bring significant advantages in many aspects. First, higher integration allows more functional components to be integrated in a smaller physical space, thereby miniaturizing devices and reducing the size of the device, which is particularly important for portable devices and wearable technologies. Second, the increase in integration helps to reduce energy consumption, because the tighter component layout reduces the distance of signal transmission, thereby reducing energy loss, which is a key factor in extending battery life and realizing green energy applications. Furthermore, precision manufacturing at the nanoscale can utilize quantum effects and nano-properties of materials, such as enhanced acoustic resonance performance, to improve the accuracy and efficiency of signal processing. In addition, the increase in integration has also promoted the development of multifunctional devices, so that the entire process of signal generation, processing and transmission can be realized on a single chip, improving the overall performance and reliability of the system, while also reducing costs. Therefore, improving the integration of nanoacoustic resonators is a key step in realizing more complex, more efficient and more miniaturized acoustic systems, which meets the urgent demand for high-performance, low-power devices in the future information technology and communication fields. Traditional nanoacoustic resonators are designed in a two-dimensional plane, occupying a large area of ​​the wafer, which is not conducive to improving the integration level. How to design a highly integrated acoustic resonator and how to complete the process preparation while ensuring that its accuracy, piezoelectricity, dielectric and other performance meet the standards are problems that technical personnel in this field need to solve. Summary of the invention

[0004] In view of the above problems, the present invention provides an acoustic resonator structure, an acoustic resonator structure, comprising a horizontal dielectric layer and a lower electrode layer close to the lower surface of the dielectric layer, and a fin module that is vertically seated on the upper surface of the dielectric layer as a whole, the fin module comprising fins coated with tungsten layers on both sides and an upper electrode led out from the bottom of the tungsten layer, the fins are silicon substrates coated with hafnium zirconium oxide-aluminum oxide coatings, the silicon substrate comprises a silicon material wall with a rectangular cross-section and coated with tungsten layers on both sides, and the size of the rectangle is determined according to a preset natural frequency.

[0005] Preferably, the hafnium zirconia-aluminum oxide coating is a composite layer formed by alternatingly overlapping multiple layers of hafnium zirconia and aluminum oxide.

[0006] Preferably, the thickness of the hafnium zirconium oxide-aluminum oxide coating is on the order of 10 nanometers.

[0007] Preferably, the thickness of the tungsten layer is on the order of 10 nanometers.

[0008] In order to complete the preparation of the above-mentioned acoustic resonator structure, the present invention also provides a method for preparing the acoustic resonator structure, and the specific scheme includes the following steps:

[0009] S1. Setting the crystal plane index of the upper surface of the silicon-dielectric wafer to (1 0 0), depositing and patterning a sacrificial oxide layer for defining the fin structure, and chemically etching along the [1 1 0] crystal direction with a potassium hydroxide solution to create a silicon material wall perpendicular to the upper surface of the silicon-dielectric wafer with a rectangular cross section, wherein the size of the rectangle is determined according to a preset natural frequency, and then removing the sacrificial oxide layer, placing the upper surface of the silicon-dielectric wafer into a reaction chamber for a subsequent coating process;

[0010] S2. introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer with a thickness of 10 nanometers on both sides and the top surface of the silicon material wall, and then removing the tungsten on the top surface by asymmetric etching;

[0011] S3. Alternately injecting a precursor containing Hf and Zr sources and water vapor into a reaction chamber at 340°C-360°C to form a layer of hafnium zirconium oxide on the outer surface of a silicon substrate covered with a tungsten layer through a chemical reaction, and then injecting trimethylaluminum and water vapor into the reaction chamber at 340°C-360°C to deposit a layer of aluminum oxide, and repeating this process 200-800 times to form a superlattice of a hafnium zirconium oxide-aluminum oxide coating with a thickness of 10 nanometers, and then removing the superlattice on the top surface by asymmetric etching;

[0012] S4. Introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer with a thickness of 10 nanometers on both sides of the superlattice and the top surface of the silicon substrate, and then removing the tungsten on the top surface by asymmetric etching to form a fin module;

[0013] S5. depositing upper electrodes at the roots of both sides of the fin module;

[0014] S6. Depositing a lower electrode layer on the lower surface of the silicon-dielectric wafer with the fin module.

[0015] The above etching and coating processes make the interface clearer and the surface uniform and smoother, thus better ensuring the piezoelectric performance of the resonator.

[0016] Another embodiment of the present invention is to provide a non-transitory readable recording medium for storing one or more programs including a plurality of instructions. When the instructions are executed, the processing circuit will execute the above-mentioned method for preparing an acoustic resonator structure.

[0017] Another embodiment of the present invention is to provide a system for preparing an acoustic resonator structure, including a processing circuit and a memory electrically coupled thereto, wherein the memory is configured to store at least one program, wherein the program includes a plurality of instructions, and the processing circuit runs the program to execute the above-mentioned method for preparing an acoustic resonator structure.

[0018] Compared with the prior art, the present invention produces the following beneficial effects:

[0019] By configuring a fin module with pre-set dimensions, the resonator can provide a natural frequency that matches the measurement. Moreover, because the fin module provides additional electrical / mechanical conversion area, it occupies a smaller wafer area than traditional two-dimensional structures at the same performance, greatly improving the integration level.

[0020] The hafnium zirconia-aluminum oxide superlattice is a ferroelectric material with excellent stability, piezoelectric properties and polarization characteristics, and is the main body of the piezoelectric effect. The tungsten layer is used as an electrode to apply an electric field to the hafnium zirconia-aluminum oxide superlattice, thereby causing the piezoelectric effect of the hafnium zirconia-aluminum oxide superlattice. Covering the hafnium zirconia-aluminum oxide superlattice with a tungsten layer ensures the uniformity of the applied electric field. By adjusting the external electric field, the polarization state of the hafnium zirconia-aluminum oxide superlattice structure can be changed, thereby further changing the natural frequency, and together expanding the adjustable frequency range of the resonator.

[0021] The above preparation method ensures that the structure of each layer of the fin is regular and the interface is smooth, thereby ensuring a narrow resonance peak of the fin structure and obtaining a high quality performance factor.

[0022] The above structures and their performances together ensure that the resonator can still maintain excellent performance in a three-dimensional structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the structure of an acoustic resonator in an embodiment of the present invention;

[0024] Figure 2 Schematic diagram of the process flow of preparing the acoustic resonator structure in an embodiment of the present invention;

[0025] In the figure, 1. silicon material wall; 2. dielectric film; 3. inner tungsten layer; 4. hafnium zirconium oxide-aluminum oxide coating; 5. outer tungsten layer; 6. upper metal electrode; 7. bottom metal electrode layer. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be described below in conjunction with the drawings in the embodiments of the present invention. The described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making innovative efforts are within the scope of protection of the present invention.

[0027] An embodiment of an acoustic resonator structure provided by the present invention is as follows:

[0028] like Figure 1 As shown, the acoustic resonator structure of the present application includes: a horizontal dielectric film 2, a fin module above it, and a bottom metal electrode layer 7 close to the lower surface of the dielectric film 2; the fin module includes fins coated with outer tungsten layers 5 on both sides and an upper metal electrode 6 led out from the bottom of the tungsten layer, the fin is a silicon substrate coated with a hafnium zirconium oxide-aluminum oxide coating 4, the silicon substrate includes a silicon material wall 1 with a rectangular cross-section and coated with an inner tungsten layer 3 on both sides, and the size of the rectangle is determined according to a preset natural frequency.

[0029] The method for preparing the transistor is implemented as follows: Figure 2 As shown, the specific scheme includes the following steps:

[0030] S1. The crystal plane index of the upper surface of the silicon-dielectric wafer (a silicon wafer with a dielectric film 2 attached to the bottom surface) is set to (10 0), a sacrificial oxide layer is deposited and patterned for fin structure definition, and a silicon material wall 1 with a rectangular cross section perpendicular to the upper surface of the silicon-dielectric wafer is created by chemically etching with a potassium hydroxide solution along the [1 1 0] crystal direction. The size of the rectangle is determined according to a preset natural frequency, and then the sacrificial oxide layer is removed, and the upper surface of the silicon-dielectric wafer is placed in a reaction chamber to enter a subsequent coating process;

[0031] S2. Introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer (inner tungsten layer 3) with a thickness of 10 nanometers on both sides and the top surface of the silicon material wall 1, and then removing the tungsten on the top surface by asymmetric etching;

[0032] S3. A precursor containing Hf and Zr sources and water vapor are alternately injected into the reaction chamber at 340°C-360°C to form a layer of hafnium zirconium oxide on the outer surface of the silicon substrate covered with a tungsten layer through a chemical reaction, and then trimethylaluminum and water vapor are injected into the reaction chamber at 340°C-360°C to deposit a layer of aluminum oxide, and this is repeated 200-800 times to form a superlattice of a hafnium zirconium oxide-aluminum oxide coating 4 with a thickness of 10 nanometers, and then the superlattice on the top surface is removed by asymmetric etching;

[0033] S4. Introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer (outer tungsten layer 5) with a thickness of 10 nanometers on both sides of the superlattice and the top surface of the silicon substrate, and then removing the tungsten on the top surface by asymmetric etching to form a fin module;

[0034] S5. Depositing the upper metal electrode 6 at the root of both sides of the fin module;

[0035] S6. Depositing a bottom metal electrode layer 7 on the lower surface of the silicon-dielectric wafer with the fin module.

[0036] It should be understood by those skilled in the art that the embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computers, available storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer program code.

[0037] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0038] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0039] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0040] Compiling the above method steps into a program and then storing it on a hard disk or other non-transitory storage medium constitutes the technical solution of "a non-transitory readable recording medium" of the present invention; and electrically connecting the storage medium to a computer processor and completing the preparation of the acoustic resonator structure through data processing constitutes the technical solution of "a preparation system for an acoustic resonator structure" of the present invention.

[0041] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for preparing an acoustic resonator structure, characterized in that The following steps are involved: S1. Setting the crystal plane index of the upper surface of the silicon-dielectric wafer to (1 0 0), depositing and patterning a sacrificial oxide layer for fin structure definition, chemically etching along the [1 1 0] crystal direction with a potassium hydroxide solution to create a silicon material wall perpendicular to the upper surface of the silicon-dielectric wafer with a rectangular cross section, wherein the size of the rectangle is determined according to a preset natural frequency, then removing the sacrificial oxide layer, and placing the upper surface of the silicon-dielectric wafer into a reaction chamber for a subsequent coating process; S2. introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer with a thickness of 10 nanometers on both sides and the top surface of the silicon material wall, and then removing the tungsten on the top surface by asymmetric etching; S3. Alternately injecting a precursor containing Hf and Zr sources and water vapor into a reaction chamber at 340°C-360°C to form a layer of hafnium zirconium oxide on the outer surface of a silicon substrate covered with a tungsten layer through a chemical reaction, and then injecting trimethylaluminum and water vapor into the reaction chamber at 340°C-360°C to deposit a layer of aluminum oxide, and repeating this process 200-800 times to form a superlattice of a hafnium zirconium oxide-aluminum oxide coating with a thickness of 10 nanometers, and then removing the superlattice on the top surface by asymmetric etching; S4. Introducing a tungsten precursor gas into the reaction chamber, and then injecting a mixture of hydrogen and argon to perform a reduction reaction, forming a tungsten layer with a thickness of 10 nanometers on both sides of the superlattice and the top surface of the silicon substrate, and then removing the tungsten on the top surface by asymmetric etching to form a fin module; S5. depositing upper electrodes at the roots of both sides of the fin module; S6. Depositing a lower electrode layer on the lower surface of the silicon-dielectric wafer with the fin module.

2. An acoustic resonator structure, characterized in that The acoustic resonator structure is prepared by the preparation method of claim 1, comprising a horizontal dielectric layer and a lower electrode layer close to the lower surface of the dielectric layer, and a fin module that is vertically seated on the upper surface of the dielectric layer as a whole, wherein the fin module comprises fins coated with tungsten layers on both sides and an upper electrode led out from the bottom of the tungsten layer, wherein the fin is a silicon substrate coated with a hafnium zirconium oxide-aluminum oxide coating, wherein the silicon substrate comprises a silicon material wall with a rectangular cross-section and coated with tungsten layers on both sides, wherein the size of the rectangle is determined according to a preset natural frequency; the hafnium zirconium oxide-aluminum oxide coating is a composite layer formed by alternating overlapping of multiple layers of hafnium zirconium oxide and alumina.

3. An acoustic resonator structure according to claim 2, characterized in that: The thickness of the hafnium zirconium oxide-aluminum oxide coating is on the order of 10 nanometers.

4. An acoustic resonator structure according to claim 3, characterized in that: The thickness of the tungsten layer is on the order of 10 nanometers.

5. A non-transitory readable recording medium for storing one or more programs including a plurality of instructions, characterized in that: When the instructions are executed, the processing circuit is caused to execute the method for preparing an acoustic resonator structure as claimed in claim 1 .

6. A system for preparing an acoustic resonator structure, comprising a processing circuit and a memory electrically coupled thereto, characterized in that: The memory configuration stores at least one program, wherein the program includes a plurality of instructions. The processing circuit runs the program to execute the method for preparing an acoustic resonator structure as claimed in claim 1 .

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