Chip structure, display module and manufacturing method thereof, and electronic device

Abstract

The present disclosure relates to a chip structure, a display module and a manufacturing method thereof, and an electronic device. The chip structure includes a first substrate, a light-emitting layer and a pad layer. The light-emitting layer is arranged on the first substrate, and the light-emitting layer includes a plurality of micro-light-emitting diodes; the pad layer is arranged on the light-emitting layer, and the pad layer includes a plurality of pads. The first electrode and the second electrode of each micro-light-emitting diode are electrically connected to different pads respectively; the area of ​​the first substrate is 5mm 2 ~25mm 2 , the number of micro-LEDs is less than or equal to 300. In the chip structure provided by the present disclosure, the area of ​​the first substrate is set to 5mm 2 ~25mm 2 The number of micro-LEDs is less than or equal to 300. A chip structure constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures, which facilitates the die bonding and subsequent maintenance and repair of the chip structure during the assembly of the display module, thereby reducing assembly and maintenance costs.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a chip structure, a display module and a manufacturing method thereof, and an electronic device. Background Art

[0002] In recent years, with the continuous development of ultra-high-definition display technology, various new light-emitting devices have been widely used in the field of consumer electronics. Micro light-emitting diodes (Micro LEDs) have the characteristics of high luminous efficiency, low energy consumption, and strong color expression, making the chip structure integrating multiple micro light-emitting diodes an important light-emitting device in new display technology.

[0003] However, the chip structure using related technology as a light-emitting device integrating micro-LEDs is limited by its structural size, resulting in problems such as difficulty in die bonding and inconvenience in maintenance and repair, resulting in high assembly and maintenance costs. Summary of the invention

[0004] In order to overcome the problems existing in the related art, the present disclosure provides a chip structure, a display module and a manufacturing method thereof, and an electronic device.

[0005] According to a first aspect of an embodiment of the present disclosure, a chip structure is provided, the chip structure comprising:

[0006] a first substrate;

[0007] A light-emitting layer, disposed on the first substrate, the light-emitting layer comprising a plurality of micro light-emitting diodes;

[0008] A pad layer is disposed on the light-emitting layer, the pad layer includes a plurality of pads, and the first electrode and the second electrode of each micro light-emitting diode are electrically connected to different pads respectively;

[0009] The area of ​​the first substrate is 5 mm 2 ~25mm 2 , and / or, the number of the micro light emitting diodes is less than or equal to 300.

[0010] In some embodiments of the present disclosure, the plurality of micro-LEDs include at least two first micro-LEDs whose first electrodes are connected to the same solder pad, and the second electrodes of the first micro-LEDs are connected to different solder pads; and / or,

[0011] The plurality of micro light emitting diodes include at least two second micro light emitting diodes whose second electrodes are connected to the same solder pad, and the first electrodes of the second micro light emitting diodes are connected to different solder pads.

[0012] In some embodiments of the present disclosure, the chip structure includes a plurality of first diode groups and a plurality of second diode groups corresponding to the plurality of first diode groups one by one, each of the first diode groups and each of the second diode groups includes a plurality of micro light-emitting diodes, and a first electrode of each of the micro light-emitting diodes in the first diode group is arranged opposite to a first electrode of each of the micro light-emitting diodes in the corresponding second diode group;

[0013] The multiple solder pads include first solder pads corresponding one-to-one to the multiple first diode groups, the first electrode of each of the micro-light-emitting diodes in the first diode group and the first electrode of each of the micro-light-emitting diodes in the corresponding second diode group are connected to the same first solder pad, and the first electrodes of the micro-light-emitting diodes of different first diode groups are connected to different first solder pads.

[0014] In some embodiments of the present disclosure, each of the micro-LEDs in the first diode group has a different light-emitting color, and the light-emitting color of each of the micro-LEDs in the second diode group corresponds one-to-one to the light-emitting color of each of the micro-LEDs in the first diode group;

[0015] The plurality of pads further include a second pad electrically connected to second electrodes of the micro light emitting diodes having the same light emitting color in the two first diode groups or the two second diode groups.

[0016] In some embodiments of the present disclosure, the chip structure has at least one rectangular area unit, and the four corner areas of one of the rectangular area units are respectively provided with two first diode groups and two second diode groups corresponding to the two first diode groups, each of the first diode groups is arranged adjacent to the corresponding second diode group, and each of the first diode groups includes three micro light-emitting diodes;

[0017] Each of the first pads is located between the corresponding first diode group and the corresponding second diode group;

[0018] The three second pads shared by the two first diode groups are arranged at intervals along the side where the two first diode groups are located;

[0019] The three second pads shared by the two second diode groups are arranged at intervals along the side where the two second diode groups are located.

[0020] In some embodiments of the present disclosure, the chip structure further includes:

[0021] A connection layer, the connection layer is arranged between the light emitting layer and the pad layer, the connection layer comprises a plurality of first interconnection lines, and the first interconnection lines are electrically connected to the first electrode or the second electrode of the micro light emitting diode;

[0022] The pad layer further includes a plurality of second interconnection lines, and both the pad and the second interconnection lines are electrically connected to the first interconnection lines.

[0023] In some embodiments of the present disclosure, the chip structure also includes a light-shielding layer, which is disposed on the first substrate. The light-shielding layer includes hollow areas that are arranged one-to-one corresponding to each of the micro-LEDs, and each of the micro-LEDs is arranged in the corresponding hollow area.

[0024] In some embodiments of the present disclosure, the first substrate is a sapphire substrate.

[0025] According to a second aspect of an embodiment of the present disclosure, a display module is provided, wherein the display module includes a plurality of chip structures as described in the first aspect.

[0026] In some embodiments of the present disclosure, the display module also includes a second substrate, a driving circuit is disposed in the second substrate, and a plurality of third solder pads connected to the driving circuit are also disposed on the second substrate. The plurality of chip structures are arranged in an array on the second substrate, and the solder pads of the chip structures are electrically connected to the third solder pads.

[0027] According to a third aspect of an embodiment of the present disclosure, an electronic device is provided, wherein the electronic device includes the display module as described in the second aspect.

[0028] According to a fourth aspect of an embodiment of the present disclosure, a method for manufacturing a chip structure is provided, the method for manufacturing the chip structure comprising:

[0029] A stacked structure is provided, the stacked structure comprising a substrate motherboard, a light-emitting layer motherboard disposed on the substrate motherboard, and a pad layer motherboard disposed on the light-emitting layer motherboard, the light-emitting layer motherboard comprising a plurality of micro light-emitting diodes, the pad layer motherboard comprising a plurality of pads, and a first electrode and a second electrode of each of the micro light-emitting diodes being electrically connected to different pads respectively;

[0030] The stacked structure is cut to obtain a plurality of chip structures, each of which includes a first substrate formed by cutting the substrate motherboard, a light-emitting layer formed by cutting the light-emitting layer mother layer, and a pad layer formed by cutting the pad layer mother layer.

[0031] In some embodiments of the present disclosure, the plurality of micro light emitting diodes include red micro light emitting diodes, green micro light emitting diodes, and blue micro light emitting diodes, and providing a stacked structure includes:

[0032] Provide substrate motherboard;

[0033] Transferring a portion of the micro-LEDs of each color to the substrate motherboard according to a first arrangement, and transferring another portion of the micro-LEDs of each color to the substrate motherboard according to a second arrangement, to form the light-emitting layer mother layer;

[0034] Wherein, the first electrodes of the micro light emitting diodes arranged in the first arrangement manner are arranged opposite to the first electrodes of the micro light emitting diodes arranged in the second arrangement manner.

[0035] In some embodiments of the present disclosure, before transferring a portion of the micro-LEDs of each color to the substrate motherboard according to a first arrangement, and transferring another portion of the micro-LEDs of each color to the substrate motherboard according to a second arrangement, to form the light-emitting layer mother layer, providing a stacked structure further includes:

[0036] forming a light shielding layer mother layer on the substrate mother board;

[0037] Removing part of the material of the light shielding layer mother layer to form hollow areas corresponding to each of the micro light emitting diodes on the light shielding layer mother layer;

[0038] Each of the micro-LEDs is arranged in the corresponding hollow area, and each of the obtained chip structures also includes a light shielding layer formed by cutting the light shielding layer mother layer.

[0039] In some embodiments of the present disclosure, after a portion of the micro-LEDs of each color are transferred to the substrate motherboard according to a first arrangement, and another portion of the micro-LEDs of each color are transferred to the substrate motherboard according to a second arrangement to form the light-emitting layer mother layer, providing a stacked structure further includes:

[0040] forming a connection layer mother layer on the light-emitting layer mother layer, wherein the connection layer mother layer comprises a plurality of first interconnection lines, and the first interconnection lines are electrically connected to the first electrode or the second electrode of the micro light-emitting diode;

[0041] The pad layer mother layer is formed on the connection layer mother layer, and the pad layer mother layer also includes a plurality of second interconnection lines. The pads and the second interconnection lines are electrically connected to the first interconnection lines, and each of the obtained chip structures also includes a connection layer formed by cutting the connection layer mother layer.

[0042] In some embodiments of the present disclosure, before cutting the stacked structure, the method for manufacturing the chip structure further includes:

[0043] The substrate motherboard is thinned and polished.

[0044] According to a fifth aspect of an embodiment of the present disclosure, a method for manufacturing a display module is provided, the method for manufacturing a display module comprising:

[0045] Provide a plurality of chip structures, each of which comprises a first substrate, a light-emitting layer and a pad layer, wherein the light-emitting layer is disposed on the first substrate, the light-emitting layer comprises a plurality of micro light-emitting diodes, the pad layer is disposed on the light-emitting layer, the pad layer comprises a plurality of pads, and a first electrode and a second electrode of each micro light-emitting diode are electrically connected to different pads respectively;

[0046] The plurality of chip structure arrays are die-bonded on the second substrate to obtain the display module.

[0047] In some embodiments of the present disclosure, the providing of multiple chip structures includes:

[0048] The chip structures of at least two chip structure groups are selected and mixed to form the plurality of chip structures, and the preset optical parameters of the chip structures in different chip structure groups belong to different optical parameter ranges.

[0049] In some embodiments of the present disclosure, the preset optical parameters include any one or a combination of any multiple of color temperature, chromaticity value, and brightness.

[0050] The technical solution provided by the embodiment of the present disclosure may have the following beneficial effects: In the chip structure provided by the present disclosure, the area of ​​the first substrate is set to 5mm 2 ~25mm 2 The number of micro-LEDs is less than or equal to 300. A chip structure constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures. This facilitates the die bonding and subsequent maintenance and repair of the chip structure during assembly of the display module, thereby reducing assembly and repair costs.

[0051] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0053] Figure 1 is a cross-sectional view of a chip structure along a thickness direction according to an exemplary embodiment.

[0054] Figure 2is a diagram showing the positional relationship among a light emitting layer, a connection layer and a pad layer according to an exemplary embodiment.

[0055] Figure 3 is a diagram showing the positional relationship between a light emitting layer and a connecting layer according to an exemplary embodiment.

[0056] Figure 4 is a schematic diagram of a pad layer according to an exemplary embodiment.

[0057] Figure 5 is a schematic diagram of a display module according to an exemplary embodiment.

[0058] Figure 6 is a schematic diagram of a second substrate according to an exemplary embodiment.

[0059] Figure 7 The figure is a flow chart of a method for manufacturing a chip structure according to an exemplary embodiment.

[0060] Figure 8 is a schematic diagram of a stacked structure according to an exemplary embodiment.

[0061] Fig. 9 is a schematic diagram showing a stacked structure after cutting according to an exemplary embodiment.

[0062] Fig.10 is a flow chart showing a method of providing a stacked structure according to an exemplary embodiment.

[0063] Fig.11 FIG. 4 is a flow chart showing a method of providing a stacked structure according to another exemplary embodiment.

[0064] Fig.12 FIG. 4 is a flow chart showing a method of providing a stacked structure according to another exemplary embodiment.

[0065] Fig.13 The figure is a flow chart of a method for manufacturing a display module according to an exemplary embodiment.

[0066] Fig.14 is a block diagram of an electronic device according to an exemplary embodiment.

[0067] In the figure:

[0068] 10-first substrate; 20-light-emitting layer; 30-micro light-emitting diode; 31-first electrode; 32-second electrode; 40-pad layer; 41-second interconnection line; 50-pad; 51-first pad; 52-second pad; 61-first diode group; 62-second diode group; 70-connection layer; 71-first interconnection line; 80-shading layer; 81-hollow area; 91-second substrate; 92-third pad; 93-laminated structure; 94-chip area; 95-chip structure; 101-processing component; 102-memory; 103-power component; 104-multimedia component; 105-audio component; 106-input / output interface; 107-sensor component; 108-communication component; 109-processor. DETAILED DESCRIPTION

[0069] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the appended claims.

[0070] In recent years, with the continuous development of ultra-high-definition display technology, the increasing demand for intelligent interaction of all things and flexible mobile smart terminals, various new display technologies have achieved rapid development, and the various new light-emitting devices have been widely used in the field of consumer electronics. Micro-light-emitting diode display technology uses a high-density integrated micro-light-emitting diode array, which has the advantages of high luminous efficiency, low energy consumption, strong color expression ability, fast response speed and long service life. In related technologies, multiple micro-light-emitting diodes are usually transferred to a large-size chip structure, and then the entire chip structure is bonded to the array substrate through a die bonding patch to form a display module.

[0071] However, the chip structure using related technology as a light-emitting device integrating micro-LEDs has a large overall size, which makes it difficult to perform die bonding and bonding of the entire chip structure. It cannot be completed using existing mainstream process equipment and requires the purchase of additional equipment. In addition, if a single micro-LED is damaged, the entire module must be scrapped, which is not convenient for maintenance and repair, resulting in high assembly and repair costs.

[0072] Based on this, the exemplary embodiment of the present disclosure provides a chip structure, the area of ​​the first substrate is set to 5mm 2 ~25mm 2The number of micro-LEDs is less than or equal to 300. A chip structure constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures. This facilitates the die bonding and subsequent maintenance and repair of the chip structure during assembly of the display module, thereby reducing assembly and repair costs.

[0073] In an exemplary embodiment, reference Figure 1 and Figure 2 As shown, the chip structure 95 includes a first substrate 10, a light-emitting layer 20 and a pad layer 40. The light-emitting layer 20 is disposed on the first substrate 10 and includes a plurality of micro-LEDs 30. The pad layer 40 is disposed on the light-emitting layer 20 and includes a plurality of pads 50. The first electrode 31 and the second electrode 32 of each micro-LED 30 are electrically connected to different pads 50. The area of ​​the first substrate 10 is 5 mm 2 ~25mm 2 Alternatively, the number of the micro-LEDs 30 is less than or equal to 300, or the area of ​​the first substrate 10 is 5 mm 2 ~25mm 2 The number of the micro LEDs 30 is less than or equal to 300.

[0074] The first substrate 10 is used to support the entire chip structure 95 and is disposed at the bottom layer in the thickness direction of the chip structure 95. The light-emitting layer 20 is disposed on the first substrate 10, and the light-emitting layer 20 includes a plurality of micro-LEDs 30. When current flows into the micro-LEDs 30, the micro-LEDs 30 can emit light of different colors. Exemplarily, the micro-LEDs 30 may include red micro-LEDs, green micro-LEDs, and blue micro-LEDs to form a primary color (Red Blue Green, RBG) channel. The number of red micro-LEDs, green micro-LEDs, and blue micro-LEDs in the chip structure 95 is the same.

[0075] The pad layer 40 is located above the light emitting layer 20, that is, on the side of the light emitting layer 20 away from the first substrate 10, and the pad layer 40 includes a plurality of pads 50. The first electrode 31 of the micro light emitting diode 30 is an anode, and the second electrode 32 is a cathode, or the first electrode 31 of the micro light emitting diode 30 is a cathode, and the second electrode 32 is an anode. The cathode and anode of the micro light emitting diode 30 are electrically connected to different pads 50, respectively. When the pads 50 are electrically connected to an external circuit, a loop consisting of the external circuit, the pads 50 and the micro light emitting diode 30 is formed, and current can be passed to each micro light emitting diode 30 through the pads 50 to realize the light emission of each micro light emitting diode 30.

[0076] The first substrate 10 serves as a support layer for the entire chip structure 95. The projections of the light emitting layer 20 and the pad layer 40 on the first substrate 10 do not exceed the plane range of the first substrate 10. The area of ​​the first substrate 10 is set to 5 mm 2 ~25mm 2 It should be noted that the area of ​​the first substrate 10 is the plane area of ​​the first substrate 10. For example, the plane of the first substrate 10 can be a square with a side length of 3 mm. The number of micro-LEDs 30 is set to be less than or equal to 300. For example, the number of micro-LEDs 30 can be 12, 48, 108, or 192. The area of ​​the first substrate 10 is 5 mm 2 ~25mm 2 When the number of micro-LEDs 30 is less than or equal to 300, the existing die bonding machine can be used to bond and package the chip structure 95 during packaging. The suction nozzle of ordinary surface mounting (SMT) equipment can also directly adsorb the chip structure 95 to perform die bonding and chip mounting of the chip structure 95, reducing the difficulty of die bonding and the investment in equipment.

[0077] In this embodiment, a chip structure 95 integrating multiple micro-LEDs 30 is formed by setting a first substrate 10, a light-emitting layer 20 and a pad layer 40, so that multiple pads 50 of the pad layer 40 are electrically connected to multiple micro-LEDs 30 of the light-emitting layer 20, and power can be supplied to the micro-LEDs 30 through the pads 50 to realize light emission of the micro-LEDs 30. The area of ​​the first substrate 10 is set to 5mm 2 ~25mm 2 The number of micro-LEDs 30 is set to be less than or equal to 300. One chip structure 95 constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures 95. This facilitates die bonding and subsequent maintenance and repair of the chip structure 95 during assembly of the display module, thereby reducing assembly costs and repair costs.

[0078] In some embodiments, reference Figure 2 As shown, the plurality of micro LEDs 30 include at least two first micro LEDs whose first electrodes 31 are connected to the same pad 50 , and the second electrodes 32 of the first micro LEDs are connected to different pads 50 .

[0079] The first electrodes 31 of at least two micro-LEDs 30 are electrically connected to the same pad 50. The micro-LEDs 30 whose first electrodes 31 are connected to the same pad 50 are first micro-LEDs, and the second electrodes 32 of the first micro-LEDs are connected to different pads 50. Figure 2As shown, the anodes of two micro LEDs 30 with the same luminous color are electrically connected to the same pad 50 , and these two micro LEDs 30 are first micro LEDs. The cathodes of the two first micro LEDs are connected to different pads 50 .

[0080] In this embodiment, the first electrodes 31 of at least two micro-LEDs 30 are connected to the same pad 50 as the first micro-LEDs, and power can be supplied to the first electrodes 31 of multiple first micro-LEDs through one pad 50 at the same time, thereby reducing the number of pads 50, thereby increasing the area of ​​each pad 50 within the limited pad layer 40 size range, improving the reliability of welding during the subsequent die bonding process of the chip structure 95, and reducing the difficulty of die bonding of the chip structure 95. The second electrodes 32 of the first micro-LEDs are connected to different pads 50 to ensure that each first micro-LED can form a different circuit, thereby enabling individual control of each first micro-LED.

[0081] In other embodiments, reference Figure 2 As shown, the plurality of micro-LEDs 30 include at least two second micro-LEDs whose second electrodes 32 are connected to the same pad 50 , and the first electrodes 31 of the second micro-LEDs are connected to different pads 50 .

[0082] The second electrodes 32 of at least two micro-LEDs 30 are electrically connected to the same pad 50. The micro-LEDs 30 whose second electrodes 32 are connected to the same pad 50 are second micro-LEDs, and the first electrodes 31 of the second micro-LEDs are connected to different pads 50. Figure 2 As shown, the cathodes of the six micro LEDs 30 are electrically connected to the same pad 50 , and the six micro LEDs 60 are second micro LEDs, and the anodes of the six second micro LEDs are connected to different pads 50 .

[0083] In this embodiment, the second electrodes 32 of at least two micro-LEDs 30 are connected to the same pad 50 as the second micro-LEDs, and power can be supplied to the second electrodes 32 of multiple second micro-LEDs through one pad 50 at the same time, thereby reducing the number of pads 50, thereby increasing the area of ​​each pad 50 within the limited pad layer 40 size range, improving the reliability of welding during the subsequent die bonding process of the chip structure 95, and reducing the difficulty of die bonding of the chip structure 95. The first electrodes 31 of the second micro-LEDs are connected to different pads 50 to ensure that each second micro-LED can form a different circuit, thereby enabling the individual control of each second micro-LED.

[0084] In some other embodiments, reference Figure 2As shown, the plurality of micro-LEDs 30 include at least two first micro-LEDs whose first electrodes 31 are connected to the same pad 50, and the second electrodes 32 of each first micro-LED are connected to different pads 50. The plurality of micro-LEDs 30 also include at least two second micro-LEDs whose second electrodes 32 are connected to the same pad 50, and the first electrodes 31 of each second micro-LED are connected to different pads 50.

[0085] Exemplarily, the anodes of two micro LEDs 30 emitting the same light color are electrically connected to the same pad 50, and the two micro LEDs 30 are first micro LEDs, and the cathodes of the two first micro LEDs are connected to different pads 50. The cathodes of six micro LEDs 30 are electrically connected to the same pad 50, and the six micro LEDs 30 are second micro LEDs, and the anodes of the six second micro LEDs are connected to different pads 50.

[0086] In this embodiment, each pad 50 can be electrically connected to the first electrode 31 or the second electrode 32 of the plurality of micro-LEDs 30, thereby reducing the number of pads 50, thereby increasing the area of ​​each pad 50 within the limited pad layer 40 size range, improving the reliability of welding during the subsequent die bonding process of the chip structure 95, and reducing the difficulty of die bonding of the chip structure 95. The second electrode 32 of the first micro-LED is connected to a different pad 50, and the first electrode 31 of the second micro-LED is connected to a different pad 50, ensuring that each first micro-LED and each second micro-LED can form a different circuit, thereby enabling the individual control of each first micro-LED and each second micro-LED to be achieved.

[0087] It can be understood that the first micro LED and the second micro LED are determined by the solder pads 50 to which they are connected. When different solder pads 50 are used as references, the same micro LED 30 can be the first micro LED or the second micro LED.

[0088] In some embodiments, reference Figures 2 to 4As shown, the chip structure 95 includes a plurality of first diode groups 61 and second diode groups 62 corresponding to the plurality of first diode groups 61. Each of the first diode groups 61 and each of the second diode groups 62 includes a plurality of micro-LEDs 30. The first electrode 31 of each micro-LED 30 in the first diode group 61 is arranged opposite to the first electrode 31 of each micro-LED 30 in the corresponding second diode group 62. The plurality of pads 50 include first pads 51 corresponding to the plurality of first diode groups 61. The first electrode 31 of each micro-LED 30 in the first diode group 61 and the first electrode 31 of each micro-LED 30 in the corresponding second diode group 62 are connected to the same first pad 51. The first electrodes 31 of the micro-LEDs 30 in different first diode groups 61 are connected to different first pads 51.

[0089] The chip structure 95 includes a plurality of first diode groups 61, and the plurality of first diode groups 61 can be arranged at intervals along a preset direction, for example. The chip structure 95 also includes a plurality of second diode groups 62 corresponding to the plurality of first diode groups 61, and the plurality of second diode groups 62 can be arranged at intervals along a reverse direction parallel to the preset direction, for example. Each first diode group 61 and each second diode group 62 includes a plurality of micro-LEDs 30 of the same number, and the first electrode 31 of each micro-LED 30 in the first diode group 61 is arranged opposite to the first electrode 31 of each micro-LED 30 in the corresponding second diode group 62. Exemplarily, each first diode group 61 and each second diode group 62 includes a red micro-LED, a green micro-LED and a blue micro-LED, a total of three micro-LEDs 30, and the cathode of each micro-LED 30 in the first diode group 61 is arranged on a side close to the second diode group 62, and the cathode of each micro-LED 30 in the second diode group 62 is arranged on a side close to the first diode group 61.

[0090] The first solder pad 51 corresponds one-to-one to multiple first diode groups 61 or second diode groups 62. For example, the cathodes of the three micro-LEDs 30 in the first diode group 61 and the cathodes of the corresponding three micro-LEDs 30 in the second diode group 62 are all connected to the same first solder pad 51, and the cathodes of the micro-LEDs 30 in different first diode groups 61 or different second diode groups 62 are connected to different first solder pads 51.

[0091] In the present embodiment, the plurality of micro-LEDs 30 are divided into a plurality of first diode groups 61 and second diode groups 62 corresponding to each other, and the first electrode 31 of each micro-LED 30 in the first diode group 61 and the first electrode 31 of each micro-LED 30 in the corresponding second diode group 62 are arranged relatively to each other. The first electrodes 31 of each micro-LED 30 in a corresponding first diode group 61 and a corresponding second diode group 62 can be simultaneously connected through a first soldering pad 51, thereby reducing the number of soldering pads 50 and thereby increasing the area of ​​each soldering pad 50 within the limited size range of the soldering pad layer 40, thereby improving the reliability of soldering during the subsequent die bonding process of the chip structure 95 and reducing the difficulty of die bonding of the chip structure 95.

[0092] In some embodiments, reference Figures 2 to 4 As shown, each micro-LED 30 in the first diode group 61 has a different light-emitting color, and the light-emitting color of each micro-LED 30 in the second diode group 62 corresponds to the light-emitting color of each micro-LED 30 in the first diode group 61. The plurality of pads 50 further include a second pad 52, which is electrically connected to the second electrode 32 of the micro-LEDs 30 with the same light-emitting color in the two first diode groups 61 or the two second diode groups 62.

[0093] Exemplarily, the first diode group 61 and the second diode group 62 each include a red micro-LED, a green micro-LED, and a blue micro-LED, a total of three micro-LEDs 30, and the arrangement order of the micro-LEDs 30 with different light-emitting colors in the first diode group 61 and the second diode group 62 is the same. The second electrodes 32 of the red micro-LEDs, the green micro-LEDs, and the blue micro-LEDs in the two first diode groups 61 or the two second diode groups 62 are electrically connected to one second pad 52, respectively.

[0094] In this embodiment, by electrically connecting the second pad 52 to the second electrode 32 of the micro-LEDs 30 with the same light-emitting color in the two first diode groups 61 or the two second diode groups 62, the second electrodes 32 of the micro-LEDs 30 with the same light-emitting color in the two first diode groups 61 or the two second diode groups 62 can be simultaneously connected through one second pad 52, thereby reducing the number of pads 50, thereby increasing the area of ​​each pad 50 within the limited pad layer 40 size range, improving the reliability of welding in the subsequent die bonding process of the chip structure 95, and reducing the difficulty of die bonding of the chip structure 95. At the same time, it is ensured that each micro-LED 30 can form a different circuit, thereby enabling the individual control of each micro-LED 30 to be achieved.

[0095] In some embodiments, reference Figures 2 to 4As shown, the chip structure 95 has at least one rectangular area unit, and the four corner areas of a rectangular area unit are respectively provided with two first diode groups 61 and two second diode groups 62 corresponding to the two first diode groups 61, each first diode group 61 is arranged adjacent to the corresponding second diode group 62, and each first diode group 61 includes three micro-LEDs 30. Each first pad 51 is located between the corresponding first diode group 61 and the corresponding second diode group 62, and the three second pads 52 shared by the two first diode groups 61 are arranged at intervals along the sides where the two first diode groups 61 are located, and the three second pads 52 shared by the two second diode groups 62 are arranged at intervals along the sides where the two second diode groups 62 are located.

[0096] The chip structure 95 has a rectangular area unit, and one rectangular area unit has four corner areas, wherein two corner areas are each provided with a first diode group 61, and the other two corner areas are each provided with a second diode group 62, so that the two first diode groups 61 correspond to and are adjacent to the two second diode groups 62. For example, each first diode group 61 and each second diode group 62 may each include a red micro-LED, a green micro-LED, and a blue micro-LED, for a total of three micro-LEDs 30.

[0097] Exemplarily, each first solder pad 51 is located between the corresponding first diode group 61 and the corresponding second diode group 62, and is electrically connected to the cathodes of the six micro-LEDs 30 in the corresponding first diode group 61 and the corresponding second diode group 62. The two first diode groups 61 have micro-LEDs 30 of three colors in total, and the anodes of the micro-LEDs 30 of each color share one second solder pad 52, and the three second solder pads 52 are arranged at intervals along the sides where the two first diode groups 61 are located. The two second diode groups 62 also have micro-LEDs 30 of three colors in total, and the anodes of the micro-LEDs 30 of each color share one second solder pad 52, and the three second solder pads 52 are arranged at intervals along the sides where the two second diode groups 62 are located.

[0098] In the present embodiment, the rectangular area unit of the chip structure 95 integrates 12 micro-LEDs 30 of three colors, so that the first pad 51 can be located between the corresponding first diode group 61 and the corresponding second diode group 62, and the second pad 52 is located on the side where the two first diode groups 61 or the two second diode groups 62 are located. On the premise of ensuring that the first pad 51 and the second pad 52 are electrically connected to the micro-LED 30 group, the first pad 51 and the second pad 52 are evenly distributed in the rectangular area unit, thereby increasing the area of ​​each pad 50 within the size range of the limited pad layer 40, thereby improving the reliability of welding in the subsequent chip structure 95 die bonding process and reducing the difficulty of die bonding of the chip structure 95.

[0099] It is understandable that the chip structure 95 may have multiple rectangular area units. For example, the number of rectangular area units may be 4, 9, or 16, so that the chip structure 95 can integrate 48, 108, or 192 micro-LEDs 30 .

[0100] In an exemplary embodiment, reference Figures 1 to 4 As shown, the chip structure 95 further includes a connection layer 70, which is disposed between the light emitting layer 20 and the pad layer 40. The connection layer 70 includes a plurality of first interconnects 71, and the first interconnects 71 are electrically connected to the first electrode 31 or the second electrode 32 of the micro light emitting diode 30. The pad layer 40 further includes a plurality of second interconnects 41, and the pads 50 and the second interconnects 41 are both electrically connected to the first interconnects 71.

[0101] The chip structure 95 further includes a connection layer 70, which is disposed between the light emitting layer 20 and the pad layer 40, and is used to realize electrical connection between the pad 50 and the micro light emitting diode 30. The connection layer 70 includes a plurality of first interconnection lines 71, which may be formed in through holes of the connection layer 70, for example, and the material of the first interconnection lines 71 may be copper, for example. The first interconnection lines 71 are electrically connected to the first electrode 31 or the second electrode 32 of the micro light emitting diode 30.

[0102] The pad layer 40 also includes multiple second interconnect lines 41, which can be located at the same height as the pad 50 along the thickness direction of the chip structure 95, and the material of the second interconnect line 41 can be copper, for example. The pad 50 and the second interconnect line 41 are both electrically connected to the first interconnect line 71, and some pads 50 are electrically connected to the second interconnect line 41.

[0103] In the present embodiment, by providing a connecting layer 70 and a second interconnection line 41, the first interconnection line 71 in the connecting layer 70 can be electrically connected to the first electrode 31 or the second electrode 32 of the micro-LED 30, and the first interconnection line 71 can be electrically connected to the first interconnection line 71 through the pad 50 or the second interconnection line 41. For part of the pads 50, a path of the pads 50, the first interconnection line 71, and the micro-LED 30 is formed, and for another part of the pads 50, a path of the pads 50, the second interconnection line 41, the first interconnection line 71, and the micro-LED 30 is formed, thereby realizing the electrical connection between the pads 50 and the micro-LED 30, and realizing that power can be supplied to the micro-LED 30 through the pads 50 to realize the light emission of the micro-LED 30.

[0104] In some embodiments, the chip structure 95 further includes a light-shielding layer 80 , which is disposed on the first substrate 10 . The light-shielding layer 80 includes hollow areas 81 corresponding to each micro-LED 30 , and each micro-LED 30 is disposed in a corresponding hollow area 81 .

[0105] The light shielding layer 80 is disposed on the first substrate 10. The material of the light shielding layer 80 may be, for example, a vinyl material. The light shielding layer 80 is used for shielding. The light shielding layer 80 includes hollow regions 81 corresponding to each micro-LED 30. Each hollow region 81 extends to the top surface of the first substrate 10 in the thickness direction of the chip structure 95. Each micro-LED 30 is disposed in the corresponding hollow region 81.

[0106] In the present embodiment, by providing a shading layer 80 and providing hollow areas 81 corresponding to each micro-LED 30 in the shading layer 80, each micro-LED 30 can be arranged in the corresponding hollow area 81, and the shading layer 80 is used to shield the micro-LED 30, so that light can only be emitted from the direction passing through the first substrate 10, thereby improving the luminous brightness of the micro-LED 30.

[0107] In some embodiments, the first substrate 10 may be, for example, a silicon substrate, an aluminum nitride substrate, or a silicon carbide substrate, etc. In other embodiments, the first substrate 10 is a sapphire substrate.

[0108] In this embodiment, the first substrate 10 is set as a sapphire substrate, so that the first substrate 10 has excellent physical properties such as high melting point and high thermal conductivity, which is convenient for processing and manufacturing the chip structure 95. At the same time, the sapphire substrate has high transparency and good optical properties, and the first substrate 10 can be directly used as the light emitting surface of the chip structure 95.

[0109] In an exemplary embodiment, reference Figure 5 As shown, a display module is provided, and the display module includes a plurality of chip structures 95 as described above.

[0110] In this embodiment, the display module includes a plurality of chip structures 95 as described above, so that the display module integrates more micro-LEDs 30, which can be used for displaying images of electronic devices. The area of ​​the first substrate 10 of the chip structure 95 is 5mm 2 ~25mm 2 The number of micro-LEDs 30 in each chip structure 95 is less than or equal to 300. One chip structure 95 constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures 95. This facilitates the die bonding and subsequent maintenance and repair of the chip structure 95 during assembly of the display module, thereby reducing assembly costs and repair costs.

[0111] In some embodiments, reference Figure 5As shown, the display module also includes a second substrate 91, a driving circuit is arranged in the second substrate 91, and a plurality of third pads 92 connected to the driving circuit are also arranged on the second substrate 91. A plurality of chip structures 95 are arranged in an array on the second substrate 91, and the pads 50 of the chip structure 95 are electrically connected to the third pads 92.

[0112] The second substrate 91 is Figure 6 As shown, the second substrate 91 may be, for example, an array substrate, and the plane shape of the second substrate 91 may be, for example, a rectangle, and a plurality of chip structures 95 are arranged in an array on the second substrate 91. The array substrate is provided with a driving circuit and a plurality of third pads 92, and the plurality of third pads 92 may, for example, be arranged corresponding to the pads 50 of the plurality of chips. The third pads 92 are electrically connected to the driving circuit, and each pad 50 of the chip structure 95 is electrically connected to the third pad 92 of the array substrate, so that the driving circuit can be electrically connected to the pad 50 of the chip structure 95.

[0113] In this embodiment, by providing a second substrate 91, multiple chip structures 95 can be provided on the second substrate 91 to form a display module, thereby realizing the integration of multiple chip structures 95. By providing a driving circuit and a third pad 92 on the second substrate 91, and electrically connecting the third pad 92 to the driving circuit, each pad 50 of the chip structure 95 is electrically connected to the third pad 92 of the array substrate, so that the driving circuit can be electrically connected to the pad 50 of the chip structure 95, so that the driving circuit can serve as an external circuit to supply power to each micro-LED 30 in each chip structure 95 to realize the light emission of each micro-LED 30. In addition, the area of ​​the first substrate 10 of the chip structure 95 is 5mm 2 ~25mm 2 The number of micro-LEDs 30 in each chip structure 95 is less than or equal to 300. One chip structure 95 constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures 95. This facilitates the die bonding and subsequent maintenance and repair of the chip structure 95 during assembly of the display module, thereby reducing assembly costs and repair costs.

[0114] In an exemplary embodiment, reference Figure 7 As shown, a method for manufacturing a chip structure 95 is provided, and the method for manufacturing the chip structure 95 includes:

[0115] S100. Provide a stacked structure, the stacked structure including a substrate motherboard, a light-emitting layer mother layer arranged on the substrate motherboard, and a pad layer mother layer arranged on the light-emitting layer mother layer, the light-emitting layer mother layer includes a plurality of micro light-emitting diodes, the pad layer mother layer includes a plurality of pads, and the first electrode and the second electrode of each micro light-emitting diode are electrically connected to different pads, respectively.

[0116] In step S100, the stacked structure 93 includes a substrate motherboard, a light-emitting layer mother layer and a pad layer mother layer, the light-emitting layer mother layer is arranged on the substrate motherboard, and the pad layer mother layer is located above the light-emitting layer mother layer. The sizes of the substrate motherboard, the light-emitting layer mother layer and the pad layer mother layer can be set correspondingly according to the number of chip structures 95 to be manufactured. The light-emitting layer mother layer includes a plurality of micro-light-emitting diodes 30, and when current is passed into the micro-light-emitting diodes 30, the micro-light-emitting diodes 30 can emit light of different colors. The pad layer mother layer includes a plurality of pads 50, the first electrode 31 of the micro-light-emitting diode 30 is an anode, and the second electrode 32 is a cathode, or the first electrode 31 of the micro-light-emitting diode 30 is a cathode, and the second electrode 32 is an anode. The cathode and anode of the micro-light-emitting diode 30 are electrically connected to different pads 50 respectively. When the pad 50 is electrically connected to the external circuit, a loop consisting of the external circuit, the pad 50 and the micro-light-emitting diode 30 is formed, and current can be passed into each micro-light-emitting diode 30 through the pad 50 to realize the light emission of each micro-light-emitting diode 30.

[0117] S200, cutting the stacked structure to obtain a plurality of chip structures, each chip structure comprising a first substrate formed by cutting a substrate motherboard, a light emitting layer formed by cutting a light emitting layer mother layer, and a pad layer formed by cutting a pad layer mother layer.

[0118] In step S200, refer to Figure 8 As shown, the stacked structure 93 includes a plurality of chip regions 94. The stacked structure 93 is cut along the edge of each chip region 94 to obtain Fig. 9 The plurality of chip structures 95 shown in FIG. Each chip structure 95 includes a first substrate 10 formed by cutting from a substrate motherboard, a light-emitting layer 20 formed by cutting from a light-emitting layer mother layer, and a pad layer 40 formed by cutting from a pad layer mother layer, so that each chip structure 95 includes a plurality of micro-LEDs 30 and a plurality of pads 50. For example, the area of ​​each first substrate 10 formed by cutting from a substrate motherboard may be, for example, 5 mm 2 ~25mm 2 , the number of micro-LEDs 30 in each chip structure 95 formed by cutting the stacked structure 93 is less than or equal to 300.

[0119] In this embodiment, by providing a stacked structure 93 and cutting the stacked structure 93, a plurality of chip structures 95 including a first substrate 10, a light-emitting layer 20 and a pad layer 40 can be formed. The plurality of pads 50 of the pad layer 40 of each chip structure 95 are electrically connected to the plurality of micro-LEDs 30 of the light-emitting layer 20, and power can be supplied to the micro-LEDs 30 through the pads 50 to realize light emission of the micro-LEDs 30. The chip structure 95 formed by cutting is greatly reduced in size compared to the stacked structure 93, which facilitates die bonding and maintenance and repair of the chip structure 95, thereby reducing assembly and repair costs.

[0120] In some embodiments, reference Fig.10 As shown, the plurality of micro LEDs 30 include a red micro LED, a green micro LED and a blue micro LED, and the stacked structure 93 includes:

[0121] S110, providing a substrate motherboard.

[0122] In step S110 , a substrate motherboard is provided. The material of the substrate motherboard may be sapphire, for example.

[0123] S120, transferring a portion of the micro-LEDs of each color to the substrate motherboard according to the first arrangement, and transferring another portion of the micro-LEDs of each color to the substrate motherboard according to the second arrangement, to form a light-emitting layer mother layer.

[0124] In step S120, the first arrangement method and the second arrangement method refer to the relative position relationship between the first electrode 31 and the second electrode 32 of the micro-LED 30. The relative position of the first electrode 31 and the second electrode 32 of the micro-LED 30 in the first arrangement method is opposite to the relative position of the first electrode 31 and the second electrode 32 of the micro-LED 30 in the second arrangement method, that is, the first electrode 31 of the micro-LED 30 arranged in the first arrangement method is arranged opposite to the first electrode 31 of the corresponding micro-LED 30 arranged in the second arrangement method.

[0125] It is understandable that a portion of the micro-LEDs 30 of each color may be first transferred to the substrate motherboard according to the first arrangement, and then another portion of the micro-LEDs 30 of each color may be transferred to the substrate motherboard according to the second arrangement. It is also possible to transfer two portions of the micro-LEDs 30 of one color to the substrate motherboard in the first arrangement and the second arrangement in sequence, and then transfer the micro-LEDs 30 of the remaining two colors to the substrate motherboard in sequence in the same manner.

[0126] Exemplarily, each micro-LED 30 can be transferred to the substrate motherboard by mass transfer, that is, the micro-LEDs 30 of the same transfer batch are first transferred to a temporary substrate, and then these micro-LEDs 30 are transferred from the temporary substrate to the substrate motherboard.

[0127] In this embodiment, by providing a substrate motherboard, the micro-LEDs 30 of each color are transferred to the substrate motherboard to form a light-emitting layer mother layer, thereby realizing the setting of the light-emitting layer mother layer on the substrate motherboard. The micro-LEDs 30 of each color are divided into two parts and transferred to the substrate motherboard according to the first arrangement mode and the second arrangement mode respectively, so that the first electrodes 31 of the micro-LEDs 30 arranged in the first arrangement mode and the first electrodes 31 of the corresponding micro-LEDs 30 arranged in the second arrangement mode are arranged oppositely, so that the first electrodes 31 of multiple micro-LEDs 30 are connected simultaneously through one pad 50, the number of pads 50 is reduced, and the area of ​​each pad 50 within the limited pad layer 40 size range can be increased, thereby improving the reliability of welding in the subsequent chip structure 95 die bonding process and reducing the difficulty of die bonding of the chip structure 95.

[0128] In some embodiments, reference Fig.11 As shown, before a portion of the micro-LEDs 30 of each color are transferred to the substrate motherboard according to the first arrangement, and another portion of the micro-LEDs 30 of each color are transferred to the substrate motherboard according to the second arrangement to form the light-emitting layer mother layer, providing the stacked structure 93 further includes:

[0129] S111, forming a light shielding layer mother layer on the substrate mother board.

[0130] In step S111, for example, a light shielding layer mother layer may be formed on the substrate mother board by a coating process. The material of the light shielding layer mother layer may be, for example, a black plastic material. The light shielding layer mother layer is used for light shielding.

[0131] S112, removing part of the material of the light shielding layer mother layer to form hollow areas corresponding to each micro light emitting diode on the light shielding layer mother layer.

[0132] In step S112, for example, part of the material of the shading layer mother layer can be removed by processes such as exposure and etching to form hollow areas 81 corresponding to each micro-LED 30 on the shading layer mother layer, and each hollow area 81 extends to the top surface of the substrate mother board in the thickness direction of the chip structure 95.

[0133] Through the above steps, a mother light shielding layer including a hollow area 81 is formed. When each micro-LED 30 is subsequently transferred, each micro-LED 30 is transferred to the corresponding hollow area 81. When the stacked structure is subsequently cut, the mother light shielding layer is cut to form a light shielding layer 80 of each chip structure 95.

[0134] In this embodiment, by providing a light shielding layer mother layer and forming a hollow area 81 corresponding to each micro-LED 30 in the light shielding layer mother layer, each micro-LED 30 can be subsequently transferred to the corresponding hollow area 81. The cut light shielding layer mother layer forms the light shielding layer 80 of each chip structure 95, and the light shielding layer 80 can be used to shield the micro-LED 30, so that light can only be emitted from the direction passing through the first substrate 10, thereby improving the light brightness of the micro-LED 30.

[0135] In some embodiments, reference Fig.12 As shown, after a portion of the micro-LEDs 30 of each color are transferred to the substrate motherboard according to the first arrangement, and another portion of the micro-LEDs 30 of each color are transferred to the substrate motherboard according to the second arrangement to form a light-emitting layer mother layer, providing the stacked structure 93 further includes:

[0136] S130, forming a connection layer mother layer on the light-emitting layer mother layer, wherein the connection layer mother layer includes a plurality of first interconnection lines, and the first interconnection lines are electrically connected to the first electrode or the second electrode of the micro light-emitting diode.

[0137] In step S130, a connection layer mother layer may be formed on the light emitting layer mother layer by processes such as deposition, etching, and filling, and the connection layer mother layer includes a plurality of first interconnection lines 71, which may be formed in through holes of the connection layer mother layer, and the material of the first interconnection lines 71 may be copper, for example. The first interconnection lines 71 are electrically connected to the first electrode 31 or the second electrode 32 of the micro light emitting diode 30.

[0138] S140, forming a pad layer mother layer on the connection layer mother layer, the pad layer mother layer also includes a plurality of second interconnection lines, the pads and the second interconnection lines are electrically connected to the first interconnection lines, and each obtained chip structure also includes a connection layer formed by cutting the connection layer mother layer.

[0139] In step S140, for example, a pad layer mother layer can be formed on the connection layer mother layer by deposition, etching and other processes, and the pad layer mother layer also includes a plurality of second interconnects 41, and the second interconnects 41 can be, for example, located at the same height as the pads 50 along the thickness direction of the stacked structure, and the material of the second interconnects 41 can be, for example, copper, and the pads 50 and the second interconnects 41 are both electrically connected to the first interconnects 71, and some pads 50 are electrically connected to the second interconnects 41. When the stacked structure is subsequently cut, the connection layer mother layer is cut to form the connection layer 70 of each chip structure 95, and the pad layer mother layer is cut to form the pad layer 40 of each chip structure 95.

[0140] In the present embodiment, a connection layer mother layer is formed on the light-emitting layer mother layer, and a pad layer mother layer is formed on the connection layer mother layer, so that the chip structure 95 obtained by subsequent cutting includes a connection layer 70 and a second interconnection line 41, and can be electrically connected to the first electrode 31 or the second electrode 32 of the micro-LED 30 through the first interconnection line 71 in the connection layer 70, and can be electrically connected to the first interconnection line 71 through the pad 50 or the second interconnection line 41. For part of the pads 50, a path of the pads 50, the first interconnection line 71, and the micro-LED 30 is formed, and for another part of the pads 50, a path of the pads 50, the second interconnection line 41, the first interconnection line 71, and the micro-LED 30 is formed, thereby realizing the electrical connection between the pads 50 and the micro-LED 30, and realizing that power can be supplied to the micro-LED 30 through the pads 50 to realize the light emission of the micro-LED 30.

[0141] In some embodiments, before cutting the stacked structure 93 , the method for manufacturing the chip structure 95 further includes: thinning and polishing the substrate motherboard.

[0142] In this embodiment, by thinning and polishing the substrate motherboard of the stacked structure 93 before cutting, that is, thinning and polishing the first substrate 10 of each chip structure 95 after cutting, the accuracy and consistency of the surface of the first substrate 10 can be improved, the burrs and defects on the surface of the first substrate 10 are eliminated, the transmittance and reflectivity of the first substrate 10 are improved, and the chip structure 95 has better optical performance and appearance quality.

[0143] In some embodiments, reference Fig.13 As shown, a method for manufacturing a display module is provided, and the method for manufacturing a display module includes:

[0144] S300. Provide multiple chip structures, each chip structure includes a first substrate, a light-emitting layer and a pad layer, the light-emitting layer is arranged on the first substrate, the light-emitting layer includes multiple micro light-emitting diodes, the pad layer is arranged on the light-emitting layer, the pad layer includes multiple pads, and the first electrode and the second electrode of each micro light-emitting diode are electrically connected to different pads respectively.

[0145] In step S300, a plurality of chip structures 95 are provided. Each chip structure 95 can be manufactured by, for example, the manufacturing method of the chip structure 95 described above. The area of ​​the first substrate 10 of the chip structure 95 can be, for example, 5 mm 2 ~25mm 2 The number of micro-LEDs 30 in each chip structure 95 may be, for example, less than or equal to 300. The specific structure of the chip structure 95 may refer to the relevant description in the above embodiment, which will not be repeated here.

[0146] S400 , die-bonding a plurality of chip structure arrays on a second substrate to obtain a display module.

[0147] In step S400, a plurality of chip structures 95 are die-bonded in an array on a second substrate 91 to obtain a display module. The specific structure of the display module can be found in the relevant description in the above embodiment and will not be described again.

[0148] In this embodiment, a display module is obtained by providing a plurality of chip structures 95 and bonding the plurality of chip structures 95 arrays on the second substrate 91, thereby realizing the integration of the plurality of chip structures 95. The driving circuit in the second substrate 91 can serve as an external circuit to supply power to each micro-LED 30 in each chip structure 95 to realize the light emission of each micro-LED 30. In addition, the area of ​​the first substrate 10 of the chip structure 95 is 5 mm 2 ~25mm 2 The number of micro-LEDs 30 in each chip structure 95 is less than or equal to 300. One chip structure 95 constitutes a structural unit of the display module. A display module is formed by combining multiple chip structures 95. This facilitates the die bonding and subsequent maintenance and repair of the chip structure 95 during assembly of the display module, thereby reducing assembly costs and repair costs.

[0149] In some embodiments, providing multiple chip structures 95 includes: selecting chip structures 95 from at least two chip structure groups and mixing them to form multiple chip structures 95, wherein the preset optical parameters of the chip structures 95 in different chip structure groups belong to different optical parameter ranges.

[0150] After obtaining multiple chip structures 95, for example, the chip structures 95 whose preset optical parameters belong to different optical parameter ranges can be divided into different chip structure groups by test sorting, and then some or all of the chip structures 95 are selected from the multiple chip structure groups as multiple chip structures 95 for making a display module, so that the preset optical parameters between the multiple chip structures 95 provided when making the display module can have different optical parameter ranges.

[0151] It should be noted that for various types of light-emitting devices, they can be divided into different partitions according to the optical parameter range of the preset optical parameters of each light-emitting device, which are defined as bins. The light-emitting devices included in each bin have similar optical parameter values. In the related art, the display module is made by directly transferring the micro-light-emitting diodes 30 to the array substrate through mass transfer. The final display module has only one optical parameter value for a preset optical parameter, and there is no opportunity to mix the light-emitting devices, that is, to mix and use light-emitting devices from different bins. The display module in this embodiment is made of multiple chip structures 95, and when providing the chip structure 95, the chip structures 95 of at least two chip structure groups are mixed to achieve mixed bins of the chip structure 95. By testing and sorting and controlling each mixed bin, it can also be ensured that the display modules produced in batches have no obvious luminous flux or color differences.

[0152] In the present embodiment, part or all of the chip structures 95 are selected from a plurality of chip structure groups and mixed as a plurality of chip structures 95 for manufacturing a display module, so that the preset optical parameters between the plurality of chip structures 95 provided when manufacturing the display module can have different optical parameter ranges, thereby realizing the mixed bins of the chip structures 95 and avoiding the modularization of the whole machine. The chip structures 95 whose preset optical parameters belong to different optical parameter ranges, i.e., different bins, can be consumed, thereby alleviating the inventory pressure of the chip structures 95 and reducing the material cost of the display module.

[0153] In some embodiments, the preset optical parameters may include, for example, luminous flux and color point coordinates.

[0154] In other embodiments, the preset optical parameters include any one or a combination of any multiple of color temperature, chromaticity value, and brightness.

[0155] By taking any one or any combination of color temperature, chromaticity value and brightness as preset optical parameters, the chip structure 95 can be divided into different chip structure groups according to the color temperature value range, chromaticity value range and brightness value range through test sorting, and when manufacturing a display module, some or all of the chip structures 95 are selected from multiple chip structure groups and mixed as multiple chip structures 95 for manufacturing a display module, so that the chip structure 95 in the manufactured display module can have different color temperature value ranges, chromaticity value ranges and brightness value ranges.

[0156] In this embodiment, by using any one or any combination of color temperature, chromaticity value and brightness as preset optical parameters, the chip structure 95 in the manufactured display module can have different color temperature value ranges, chromaticity value ranges and brightness value ranges, and can achieve mixing of chip structures 95 in different dimensions such as color temperature, chromaticity value and brightness, thereby avoiding the modularization of the whole machine, and can consume chip structures 95 with different color temperature value ranges, chromaticity value ranges and brightness value ranges, thereby alleviating the inventory pressure of the chip structure 95 and reducing the material cost of the display module.

[0157] In an exemplary embodiment, an electronic device is provided. The electronic device may be, for example, a mobile phone, a tablet computer, a laptop computer, a television set, etc. The electronic device includes the display module described above.

[0158] In some embodiments, reference Fig.14 As shown, the electronic device may also include one or more of the following components: a processing component 101, a memory 102, a power component 103, a multimedia component 104, an audio component 105, an input / output (I / O) interface 106, a sensor component 107, and a communication component 108.

[0159] The processing component 101 generally controls the overall operation of the electronic device, such as operations associated with display, phone calls, data communications, camera operations, and recording operations. The processing component 101 may include one or more processors 109 to execute instructions. In addition, the processing component 101 may include one or more modules to facilitate interaction between the processing component 101 and other components. For example, the processing component 101 may include a multimedia module to facilitate interaction between the multimedia component 104 and the processing component 101.

[0160] The memory 102 is configured to store various types of data to support operations on the electronic device. Examples of such data include instructions for any application or method operating on the electronic device, contact data, phone book data, messages, pictures, videos, etc. The memory 102 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0161] The power component 103 provides power to various components of the electronic device. The power component 103 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to the electronic device.

[0162] The multimedia component 104 includes a screen that provides an output interface between the electronic device and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touch screen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touch, slide, and gestures on the touch panel. The touch sensor may not only sense the boundaries of the touch or slide action, but also detect the duration and pressure associated with the touch or slide operation. In some embodiments, the multimedia component 104 includes a front camera and / or a rear camera. When the electronic device is in an operating mode, such as a shooting mode or a video mode, the front camera and / or the rear camera may receive external multimedia data. Each front camera and rear camera may be a fixed optical lens system or have a focal length and optical zoom capability.

[0163] The audio component 105 is configured to output and / or input audio signals. For example, the audio component 105 includes a microphone (MIC), and when the electronic device is in an operation mode, such as a call mode, a recording mode, and a speech recognition mode, the microphone is configured to receive an external audio signal. The received audio signal can be further stored in the memory 102 or sent via the communication component 108. In some embodiments, the audio component 105 also includes a speaker for outputting audio signals.

[0164] I / O interface 106 provides an interface between processing component 101 and peripheral interface modules, which may be keyboards, click wheels, buttons, etc. These buttons may include but are not limited to: a home button, a volume button, a start button, and a lock button.

[0165] The sensor assembly 107 includes one or more sensors for providing various aspects of status assessment for the electronic device. For example, the sensor assembly 107 can detect the on / off state of the electronic device, the relative positioning of components, such as the display and keypad of the electronic device, and the sensor assembly 107 can also detect the position change of the electronic device or a component of the electronic device, the presence or absence of user contact with the electronic device, the orientation or acceleration / deceleration of the electronic device and the temperature change of the electronic device. The sensor assembly 107 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. The sensor assembly 107 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly 107 may also include an accelerometer, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.

[0166] The communication component 108 is configured to facilitate wired or wireless communication between the electronic device and other devices. The device can access a wireless network based on a communication standard, such as WiFi, 2G or 3G, or a combination thereof. In an exemplary embodiment, the communication component 108 receives a broadcast signal or broadcast-related information from an external broadcast management system via a broadcast channel. In an exemplary embodiment, the communication component 108 also includes a near field communication (NFC) module to facilitate short-range communication. For example, the NFC module can be implemented based on radio frequency identification (RFID) technology, infrared data association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology and other technologies.

[0167] In an exemplary embodiment, the electronic device may be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components.

[0168] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 102 including instructions. For example, the non-transitory computer-readable storage medium may be a ROM, a random access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, and the like.

[0169] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses or adaptations of the present invention that follow the general principles of the present invention and include common knowledge or customary techniques in the art that are not disclosed in this disclosure. The specification and examples are to be considered as exemplary only, and the true scope and spirit of the present invention are indicated by the following claims.

[0170] It should be understood that the present invention is not limited to the exact construction that has been described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A chip structure, characterized in that: The chip structure comprises: a first substrate; A light-emitting layer, disposed on the first substrate, the light-emitting layer comprising a plurality of micro light-emitting diodes; A pad layer is disposed on the light-emitting layer, the pad layer includes a plurality of pads, and the first electrode and the second electrode of each micro light-emitting diode are electrically connected to different pads respectively; The area of ​​the first substrate is 5 mm 2 ~25mm 2 , and / or, the number of the micro-LEDs is less than or equal to 300; the plurality of micro-LEDs include at least two first micro-LEDs whose first electrodes are connected to the same solder pad, and the second electrodes of the first micro-LEDs are connected to different solder pads; and / or, The plurality of micro-LEDs include at least two second micro-LEDs whose second electrodes are connected to the same solder pad, and the first electrodes of the second micro-LEDs are connected to different solder pads; the chip structure includes a plurality of first diode groups and a plurality of second diode groups corresponding to the plurality of first diode groups one by one, each of the first diode groups and each of the second diode groups includes a plurality of micro-LEDs, and the first electrode of each micro-LED in the first diode group is arranged opposite to the first electrode of each micro-LED in the corresponding second diode group; The plurality of pads include first pads corresponding to the plurality of first diode groups one by one, the first electrode of each of the micro-LEDs in the first diode group and the first electrode of each of the micro-LEDs in the corresponding second diode group are connected to the same first pad, and the first electrodes of the micro-LEDs in different first diode groups are connected to different first pads; each of the micro-LEDs in the first diode group has a different luminous color, and the luminous color of each of the micro-LEDs in the second diode group corresponds to the luminous color of each of the micro-LEDs in the first diode group one by one; The plurality of pads further include a second pad electrically connected to second electrodes of the micro light emitting diodes having the same light emitting color in the two first diode groups or the two second diode groups.

2. The chip structure according to claim 1, characterized in that: The chip structure has at least one rectangular area unit, and the four corner areas of one of the rectangular area units are respectively provided with two first diode groups and two second diode groups corresponding to the two first diode groups, each of the first diode groups is arranged adjacent to the corresponding second diode group, and each of the first diode groups includes three micro light-emitting diodes; Each of the first pads is located between the corresponding first diode group and the corresponding second diode group; The three second pads shared by the two first diode groups are arranged at intervals along the side where the two first diode groups are located; The three second pads shared by the two second diode groups are arranged at intervals along the side where the two second diode groups are located.

3. The chip structure according to claim 1 or 2, characterized in that: The chip structure also includes: A connection layer, the connection layer is arranged between the light emitting layer and the pad layer, the connection layer comprises a plurality of first interconnection lines, and the first interconnection lines are electrically connected to the first electrode or the second electrode of the micro light emitting diode; The pad layer further includes a plurality of second interconnection lines, and both the pad and the second interconnection lines are electrically connected to the first interconnection lines.

4. The chip structure according to claim 1 or 2, characterized in that: The chip structure further includes a light shielding layer, which is disposed on the first substrate. The light shielding layer includes hollow areas that are disposed in one-to-one correspondence with each of the micro-LEDs, and each of the micro-LEDs is disposed in the corresponding hollow area.

5. The chip structure according to claim 1 or 2, characterized in that: The first substrate is a sapphire substrate.

6. A display module, characterized in that: The display module includes a plurality of chip structures as described in any one of claims 1-5.

7. The display module according to claim 6, characterized in that: The display module also includes a second substrate, a driving circuit is disposed in the second substrate, and a plurality of third pads connected to the driving circuit are also disposed on the second substrate. The plurality of chip structures are arranged in an array on the second substrate, and the pads of the chip structures are electrically connected to the third pads.

8. An electronic device, characterized in that: The electronic device comprises the display module as claimed in claim 6 or 7.

9. A method for manufacturing a chip structure, characterized in that: Used to manufacture the chip structure according to any one of claims 1 to 5, the manufacturing method of the chip structure comprising: A stacked structure is provided, the stacked structure comprising a substrate motherboard, a light-emitting layer motherboard disposed on the substrate motherboard, and a pad layer motherboard disposed on the light-emitting layer motherboard, the light-emitting layer motherboard comprising a plurality of micro light-emitting diodes, the pad layer motherboard comprising a plurality of pads, and a first electrode and a second electrode of each of the micro light-emitting diodes being electrically connected to different pads respectively; The stacked structure is cut to obtain a plurality of chip structures, each of which includes a first substrate formed by cutting the substrate motherboard, a light-emitting layer formed by cutting the light-emitting layer mother layer, and a pad layer formed by cutting the pad layer mother layer.

10. The method for manufacturing a chip structure according to claim 9, characterized in that: The plurality of micro light emitting diodes include a red micro light emitting diode, a green micro light emitting diode and a blue micro light emitting diode, and providing a stacked structure includes: Provide substrate motherboard; Transferring a portion of the micro-LEDs of each color to the substrate motherboard according to a first arrangement, and transferring another portion of the micro-LEDs of each color to the substrate motherboard according to a second arrangement, to form the light-emitting layer mother layer; Wherein, the first electrodes of the micro light emitting diodes arranged in the first arrangement manner are arranged opposite to the first electrodes of the micro light emitting diodes arranged in the second arrangement manner.

11. The method for manufacturing a chip structure according to claim 10, characterized in that: Before transferring a portion of the micro-LEDs of each color onto the substrate motherboard according to a first arrangement, and transferring another portion of the micro-LEDs of each color onto the substrate motherboard according to a second arrangement to form the light-emitting layer mother layer, providing the stacked structure further includes: forming a light shielding layer mother layer on the substrate mother board; Removing part of the material of the light shielding layer mother layer to form hollow areas on the light shielding layer mother layer corresponding to each of the micro light emitting diodes; Each of the micro-LEDs is arranged in the corresponding hollow area, and each of the obtained chip structures also includes a light shielding layer formed by cutting the light shielding layer mother layer.

12. The method for manufacturing a chip structure according to claim 10, characterized in that: After transferring a portion of the micro-LEDs of each color onto the substrate motherboard according to a first arrangement, and transferring another portion of the micro-LEDs of each color onto the substrate motherboard according to a second arrangement to form the light-emitting layer mother layer, providing the stacked structure further includes: forming a connection layer mother layer on the light-emitting layer mother layer, wherein the connection layer mother layer comprises a plurality of first interconnection lines, and the first interconnection lines are electrically connected to the first electrode or the second electrode of the micro light-emitting diode; The pad layer mother layer is formed on the connection layer mother layer, and the pad layer mother layer also includes a plurality of second interconnection lines. The pads and the second interconnection lines are electrically connected to the first interconnection lines, and each of the obtained chip structures also includes a connection layer formed by cutting the connection layer mother layer.

13. The method for manufacturing a chip structure according to any one of claims 9 to 12, characterized in that: Before cutting the stacked structure, the method for manufacturing the chip structure further includes: The substrate motherboard is thinned and polished.

14. A method for manufacturing a display module, characterized in that: Used to manufacture the display module according to claim 6 or 7, the manufacturing method of the display module comprising: Provide a plurality of chip structures, each of which comprises a first substrate, a light-emitting layer and a pad layer, wherein the light-emitting layer is disposed on the first substrate, the light-emitting layer comprises a plurality of micro light-emitting diodes, the pad layer is disposed on the light-emitting layer, the pad layer comprises a plurality of pads, and a first electrode and a second electrode of each micro light-emitting diode are electrically connected to different pads respectively; The plurality of chip structure arrays are die-bonded on the second substrate to obtain the display module.

15. The method for manufacturing a display module according to claim 14, characterized in that: The present invention provides a plurality of chip structures, including: The chip structures of at least two chip structure groups are selected and mixed to form the plurality of chip structures, and the preset optical parameters of the chip structures in different chip structure groups belong to different optical parameter ranges.

16. The method for manufacturing a display module according to claim 15, characterized in that: The preset optical parameters include any one or a combination of any multiple of color temperature, chromaticity value and brightness.

Images