Crystalline silicon laminated solar cell and manufacturing method thereof

Abstract

The present application relates to crystalline silicon stacked solar cells and methods for making the same, and is intended to improve the electrical connection between stacked solar cells, promote the effective collection of carriers, and reduce interface light loss. The first conductive layer is designed with a concave-convex structure, the middle insulating layer is filled in the groove, and the upper surface of some bumps protrude from the insulating layer, electrically connected to the second conductive layer, enhancing the electrical connection performance between the layers, and also facilitating the refraction and scattering of light, and achieving better electrical connection performance and light absorption effect through further optimized design, the method is convenient for process control, and the multi-layer structure ensures the stability and performance of the battery. Adding metal grid lines in the first conductive layer enhances the current collection capability. The crystalline silicon stacked solar cell and methods for making the same provided by the present application have good technical effects in terms of improving electrical connection, promoting carrier collection, and reducing interface light loss, and provide a new solution for the development of stacked solar cell technology.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a crystalline silicon stacked solar cell and a manufacturing method thereof. Background Art

[0002] Heterojunction solar cells have shown significant advantages in the field of solar energy due to their small size, high flexibility, good low-temperature effect, high-efficiency conversion, fast response and wide wavelength response. Perovskite tandem solar cells achieve efficient utilization of the solar spectrum through their high efficiency, flexibility and adjustability, especially through the superposition of wide-bandgap and narrow-bandgap perovskite sub-cells. Both are important directions for the development of solar energy technology, aiming to improve photoelectric conversion efficiency and reduce production costs to meet the growing demand for clean energy.

[0003] Tandem solar cells are a highly efficient photovoltaic technology that achieves comprehensive absorption of the solar spectrum by combining multiple layers of absorption layers with different energy band structures, thereby significantly improving energy conversion efficiency. This technology uses different semiconductor materials and achieves efficient photoelectric conversion through precise deposition technology and process control. Tandem solar cells not only have the advantages of high efficiency and low cost, but also have excellent flexibility and environmental adaptability. They are suitable for many fields such as household electricity, aerospace technology, transportation, etc. With the continuous advancement of technology, tandem solar cells are expected to provide important support for the development of the renewable energy field.

[0004] At present, tandem solar cells face many technical challenges in light absorption. The first problem is to ensure that the spectral response of each layer of material matches the solar spectrum distribution to maximize the light absorption efficiency. Secondly, the selection of materials and the design of the band structure are crucial to light absorption, and it is necessary to find new materials with higher light absorption efficiency and stability. In addition, the interface design between different material layers in tandem solar cells is also key. Optimizing the interface structure, reducing interface defects and improving the quality of interface contact are necessary steps to improve light absorption efficiency. At the same time, applying various technologies to reduce the reflection loss of light on the surface of the cell is also an effective way to improve light absorption efficiency. Finally, reducing photothermal loss, that is, reducing the additional heat brought by high-energy photons, is also an important task to improve the photoelectric conversion efficiency of tandem solar cells. Solving these technical problems will help improve the overall performance of tandem solar cells. Summary of the invention

[0005] The purpose of the present application is to provide a crystalline silicon tandem solar cell, which can improve the electrical connection between the tandem solar cells, facilitate the collection of carriers, and reduce the light loss at the interface. The purpose of the present application is achieved through the following technical solution: the crystalline silicon tandem solar cell comprises: a crystalline silicon heterojunction cell layer and a perovskite cell layer, and a transition connection layer is included between the crystalline silicon heterojunction cell layer and the perovskite cell layer;

[0006] The transition connection layer includes a first conductive layer, an intermediate insulating layer and a second conductive layer in sequence from the crystalline silicon heterojunction battery layer to the perovskite battery layer;

[0007] The first conductive layer has a concavo-convex structure on a side away from the crystalline silicon heterojunction battery layer, the intermediate insulating layer is filled in the groove of the concavo-convex structure, and the upper surface of at least part of the convex block protrudes out of the surface of the intermediate insulating layer away from the crystalline silicon heterojunction battery layer;

[0008] The second conductive layer covers the protruding bumps and the surface of the intermediate insulating layer away from the crystalline silicon heterojunction battery layer, and the second conductive layer is electrically connected to the protruding bumps;

[0009] The first conductive layer serves as the top transparent oxide conductive layer of the crystalline silicon heterojunction battery layer, and the second conductive layer serves as the bottom transparent oxide conductive layer of the perovskite battery layer.

[0010] In one embodiment, the concavo-convex structure in the first conductive layer comprises first and second bumps of different sizes and first and second grooves of different sizes, the size of the first bump is larger than the size of the second bump, and the intermediate insulating layer completely covers the second bump.

[0011] In one embodiment, the second conductive layer has a P1 line of the perovskite cell layer, the first groove is in a long strip shape and its position corresponds to the position of the P1 line, and the width of the first groove is greater than the width of the P1 line.

[0012] In one embodiment, the intermediate insulating layer is formed by liquid coating.

[0013] In one embodiment, the refractive indexes of the first conductive layer, the intermediate insulating layer and the second conductive layer decrease in sequence.

[0014] In one embodiment, the crystalline silicon heterojunction cell layer includes, from bottom to top, a p-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an n-type silicon substrate, a second intrinsic amorphous silicon layer, and an n-type doped amorphous silicon layer.

[0015] In one embodiment, the first conductive layer includes metal gate lines.

[0016] The present application further provides a method for manufacturing a crystalline silicon stacked solar cell, comprising:

[0017] Forming a first conductive layer on a crystalline silicon heterojunction solar cell, and etching the first conductive layer to form a concave-convex structure;

[0018] Applying an insulating glue layer to form an intermediate insulating layer, and filling the intermediate insulating layer in the groove of the concave-convex structure, and at least a portion of the upper surface of the convex block protrudes out of the intermediate insulating layer away from the surface of the crystalline silicon heterojunction battery layer;

[0019] A second conductive layer is formed on the structure in which the intermediate insulating layer is formed, and a perovskite cell layer structure is formed on the conductive layer.

[0020] In one of the embodiments, the crystalline silicon heterojunction solar cell is a cell with printed front fine grid lines.

[0021] In one of the embodiments, before forming the first conductive layer, a portion of the thickness of the fine gate line is removed by laser etching.

[0022] Compared with the prior art, the present application proposes a new crystalline silicon stacked solar cell and its manufacturing method, which improves the electrical connection performance between stacked solar cells by introducing a transition connection layer, enhances the carrier collection efficiency, and significantly reduces the light loss at the interface. The transition connection layer is composed of a first conductive layer, an intermediate insulating layer and a second conductive layer, wherein the first conductive layer has a unique concave-convex structure, the grooves are filled by the intermediate insulating layer, and the electrical connection between the bumps and the second conductive layer is retained, thereby optimizing the electrical connection and reducing the interface light loss through the refraction and scattering of light. The concave-convex structure uses bumps and grooves of different sizes, and an intermediate insulating layer formed by liquid coating, which further enhances the photoelectric conversion efficiency and performance stability of the battery. In addition, the multilayer structure of the crystalline silicon heterojunction battery layer and the metal grid line design in the first conductive layer can further improve the current collection efficiency and the overall performance of the battery.

[0023] In terms of the manufacturing method, the first conductive layer is first formed on the crystalline silicon heterojunction solar cell and then etched, then an insulating glue layer is applied to form an intermediate insulating layer, and finally a second conductive layer and a perovskite cell layer structure are formed, thereby achieving efficient and precise crystalline silicon stacked solar cell manufacturing. The crystalline silicon stacked solar cell and its manufacturing method proposed in this application have achieved significant technical effects in improving electrical connection, increasing carrier collection efficiency, and reducing interface light loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of a stacked solar cell according to an embodiment of the present application;

[0025] Figure 2 is a schematic structural diagram of a stacked solar cell according to another embodiment of the present application;

[0026] Figure 3 It is a schematic diagram of the structure of a stacked solar cell according to an embodiment of the present application including the P1 line.

[0027] Explanation of reference numerals: 100, crystalline silicon heterojunction battery layer; 200, perovskite battery layer; 300, transition connection layer; 310, first conductive layer; 320, intermediate insulating layer; 330, second conductive layer. DETAILED DESCRIPTION

[0028] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It is to be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some structures related to the present application are shown in the accompanying drawings, rather than all structures. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0029] The terms "including" and "having" and any variations thereof in this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] See also Figure 1 to Figure 2As shown, the crystalline silicon tandem solar cell of the present application is suitable for improving electrical connection, increasing carrier collection efficiency and reducing interface light loss. A crystalline silicon tandem solar cell of the present application includes: a crystalline silicon heterojunction cell layer 100 and a perovskite cell layer 200, and a transition connection layer 300 is included between the crystalline silicon heterojunction cell layer 100 and the perovskite cell layer 200. The design of the crystalline silicon tandem solar cell of the present application introduces a transition connection layer 300 between the crystalline silicon heterojunction cell layer 100 and the perovskite cell layer 200 through the needs of interlayer connection and performance optimization, thereby maximizing the performance and efficiency of the tandem solar cell.

[0032] The transition connection layer 300 includes a first conductive layer 310, an intermediate insulating layer 320 and a second conductive layer 330 in sequence from the crystalline silicon heterojunction battery layer 100 to the perovskite battery layer 200. The transition connection layer 300 is a key part of the crystalline silicon stacked solar cell of the present application. It firstly acts as a bridge to ensure a stable connection between the crystalline silicon heterojunction battery layer 100 and the perovskite battery layer 200. The transition connection layer 300 is composed of a three-layer structure, namely a first conductive layer 310, an intermediate insulating layer 320 and a second conductive layer 330. The first conductive layer 310 serves as the top transparent oxide conductive layer of the crystalline silicon heterojunction battery layer 100, which not only ensures smooth transmission of current, but also its unique concave-convex structure design further enhances the contact with subsequent layers and can be compatible with the production of the upper perovskite layer at the same time. The groove design in the concave-convex structure allows the intermediate insulating layer 320 to be filled therein, while the bump maintains a direct electrical connection with the second conductive layer 330.

[0033] The first conductive layer 310 has a concave-convex structure on the side away from the crystalline silicon heterojunction battery layer 100, the intermediate insulating layer 320 is filled in the groove of the concave-convex structure, and the upper surface of at least part of the bump protrudes out of the surface of the intermediate insulating layer 320 away from the crystalline silicon heterojunction battery layer 100.

[0034] The second conductive layer 330 covers the protruding bumps and the surface of the intermediate insulating layer 320 away from the crystalline silicon heterojunction battery layer 100. The second conductive layer 330 is electrically connected to the protruding bumps. The second conductive layer 330 can directly serve as the bottom transparent oxide conductive layer of the perovskite battery layer 200. The second conductive layer 330 covers the protruding bumps and the surface of the intermediate insulating layer 320, and is electrically connected to the protruding bumps, ensuring that current can be efficiently transmitted between the crystalline silicon heterojunction battery layer 100 and the perovskite battery layer 200.

[0035] Among them, the first conductive layer 310 is used as the top transparent oxide conductive layer of the crystalline silicon heterojunction battery layer 100, and the second conductive layer 330 is used as the bottom transparent oxide conductive layer of the perovskite battery layer 200. The design of the concave-convex structure causes the light to be reflected and refracted multiple times on the surface of the crystalline silicon heterojunction battery layer 100, effectively changing the direction of the incident light in the silicon, thereby avoiding the light from being emitted in the direction of the heterojunction battery layer. Since the absorption spectrum of the perovskite layer and the heterojunction solar cell layer is designed, the light has more opportunities to interact with the solar cell material, thereby improving the light absorption rate. Experiments show that this design can reduce the reflectivity of the silicon wafer surface to less than 10%, thereby significantly improving the light absorption capacity of the solar cell. Since the concave-convex structure increases the light absorption rate, more light energy is converted into electrical energy, thereby improving the energy conversion efficiency of the solar cell. Specifically, the energy conversion efficiency of the solar cell using this design can be increased by 1 percentage point. Combined with the designed stacked solar cell, under laboratory conditions, it can achieve a conversion efficiency of 33% with high repeatability.

[0036] Specifically, the concavo-convex structure in the first conductive layer 310 has first and second bumps of different sizes and first and second grooves of different sizes, the size of the first bump is larger than the size of the second bump, and the intermediate insulating layer 320 completely covers the second bump. In the design of the crystalline silicon stacked solar cell, the concavo-convex structure in the first conductive layer 310 has first and second bumps of different sizes and corresponding first and second grooves. This specific size and shape selection is to achieve optimal performance in terms of light absorption, carrier transport and interface connection. First, the first and second bumps and the grooves therebetween form a unique optical structure. Since the size of the first bump is larger than the second bump, light will be more effectively guided and captured when it contacts this structure. The large-sized first bump can more effectively capture and concentrate more light, while the small-sized second bump can further trap light at different angles, thereby increasing the utilization of light and improving the light absorption rate. Bumps and grooves of different sizes also have a positive effect on the transmission of carriers. Since the first bump is larger in size, the electrical connection can form a wider current channel, which helps to reduce the resistance and energy loss during current transmission. The second bump mainly plays the role of trapping light.

[0037] In addition, the design of the intermediate insulating layer 320 completely covering the second bump ensures electrical isolation and mechanical stability between layers. This setting can prevent direct contact between different conductive layers, and can avoid possible current leakage and short circuit phenomena when forming the perovskite battery layer 200. At the same time, the coverage of the insulating layer also enhances the mechanical stability of the structure and improves the durability and reliability of the solar cell. From the perspective of interface connection, the concave-convex structure of the first conductive layer 310 and the second conductive layer 330 cooperate to ensure efficient connection between layers. The protruding bump is in close contact with the second conductive layer 330 to form a stable electrical connection. This design helps to reduce interface resistance and energy loss and improve the overall performance of the solar cell. The first and second bumps of different sizes in the first conductive layer 310 and the corresponding groove design play an important role in light absorption, carrier transport and interface connection, which not only improves the photoelectric conversion efficiency of the solar cell, but also enhances its stability and reliability.

[0038] Please read further Figure 3 , the second conductive layer 330 has the P1 line of the perovskite battery layer 200, the first groove is in the shape of an elongated strip and its position corresponds to the position of the P1 line, and the width of the first groove is greater than the width of the P1 line. In the design and manufacture of the perovskite solar cell layer, the precise control of the structure has a decisive influence on the battery performance. The P1 line of the perovskite battery layer 200 exists in the second conductive layer 330. This structural setting matches the first groove of a specific shape and position. In the perovskite solar cell, the P1 line is usually used to define the active area of ​​the battery to ensure the effective transmission of the current inside the battery. These lines are usually formed by laser etching or other physical / chemical methods. They can accurately control the flow path of the current and reduce the lateral diffusion of the current, thereby improving the efficiency of the battery. The elongated groove is located at a position corresponding to the P1 line, and its width is greater than the width of the P1 line. Since the width of the first groove is greater than the P1 line, it actually forms a tiny current concentration area on both sides of the P1 line. In this area, the current density will be relatively high, which is conducive to the separation and transmission of electrons and holes, thereby improving the photoelectric conversion efficiency of the battery. During the operation of perovskite solar cells, stress may be generated due to temperature changes and differences in material expansion coefficients. The design of the first groove can optimize the distribution of these stresses near the P1 line, reduce stress concentration and possible material damage, and improve the long-term stability of the battery.

[0039] Specifically, the intermediate insulating layer 320 is formed by liquid coating. Liquid coating technology can ensure that the insulating layer forms a uniform and consistent coating on the substrate. This is because during the coating process of the liquid material, the coating thickness can be precisely controlled by precise process control (such as coating speed, coating pressure, and material viscosity). This uniformity and consistency are crucial to ensuring the electrical properties and mechanical strength of the insulating layer. Liquid coating technology is suitable for substrates of various shapes and sizes, including flat surfaces, curved surfaces, and irregular shapes. In addition, once the coating equipment and process parameters are optimized, fast and continuous coating operations can be achieved, thereby improving production efficiency.

[0040] Specifically, the refractive indexes of the first conductive layer 310, the intermediate insulating layer 320, and the second conductive layer 330 decrease in sequence. Due to the gradual decrease in the refractive index, light will be refracted and reflected at different interfaces when passing through the three-layer structure. The propagation path and reflection intensity of light in the structure can be controlled by the designed refractive index gradient. The design of gradually decreasing refractive index helps to reduce the loss of light during transmission. When light enters a low refractive index medium from a high refractive index medium, the reflectivity decreases, thereby reducing the reflection loss of light. The above design can reduce the reflectivity to 3%-4%, improving the absorption probability of photons and the energy conversion efficiency.

[0041] Specifically, the crystalline silicon heterojunction cell layer 100 includes, from bottom to top, a p-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an n-type silicon substrate, a second intrinsic amorphous silicon layer, and an n-type doped amorphous silicon layer.

[0042] Specifically, the first conductive layer 310 includes a metal grid line, which acts as a current collector and plays a key role in the crystalline silicon solar cell. Since the metal grid line is directly connected to the front of the crystalline silicon cell, it can effectively collect and transmit the current generated by the solar cell. This design can significantly reduce the lateral diffusion of the current, improve the current collection efficiency, and thus increase the output power of the solar cell. It is formed by using the thin grid line on the original crystalline silicon heterojunction. Since the metal grid line is directly connected to the front of the crystalline silicon cell, it can effectively collect and transmit the current generated by the solar cell, which can significantly reduce the lateral diffusion of the current, improve the current collection efficiency, and thus increase the output power of the solar cell.

[0043] The present application further provides a method for manufacturing a crystalline silicon tandem solar cell, which can manufacture the aforementioned tandem solar cell structure by a simple method, and by optimizing the structure of the transition layer, the scribing preparation compatibility of the perovskite cell layer 200 is higher, and the manufacturing method specifically includes:

[0044] A first conductive layer 310 is formed on a crystalline silicon heterojunction solar cell, and the first conductive layer 310 is etched to form a concave-convex structure. By precisely controlling the material and thickness of the first conductive layer 310, it is possible to ensure good bonding with the crystalline silicon heterojunction solar cell and provide stable conductive performance for subsequent steps. Etching the first conductive layer 310 to form a concave-convex structure not only increases the surface area of ​​the stacked structure and improves the light absorption efficiency, but also facilitates the subsequent filling of the insulating glue layer. The formation of the concave-convex structure can be achieved by various methods such as laser etching and chemical etching.

[0045] Apply an insulating glue layer to form an intermediate insulating layer 320, and fill the intermediate insulating layer 320 in the groove of the concavo-convex structure, and at least part of the upper surface of the bump protrudes from the intermediate insulating layer 320 away from the surface of the crystalline silicon heterojunction battery layer 100; Apply an insulating glue layer to form an intermediate insulating layer 320, and fill the intermediate insulating layer 320 in the groove of the concavo-convex structure. The key to this step is to ensure that the insulating glue layer can completely fill the groove, and at least part of the upper surface of the bump protrudes from the intermediate insulating layer 320 away from the surface of the crystalline silicon heterojunction battery layer 100,

[0046] A second conductive layer 330 is formed on the structure formed with the intermediate insulating layer 320, and a perovskite battery layer 200 structure is formed on the conductive layer, providing a necessary conductive channel for the perovskite battery layer 200 and ensuring current transmission between the stacked structures. The material and thickness of the second conductive layer 330 can be selected and adjusted according to specific needs.

[0047] Specifically, the crystalline silicon heterojunction solar cell is a cell with printed front fine grid lines. Before forming the first conductive layer 310, the fine grid lines of part thickness are removed by laser etching method, which can further optimize the performance of the stacked structure. Removing part of the fine grid lines can ensure conductivity while reducing the required thickness of the first conductive layer 310.

[0048] Specifically, before forming the first conductive layer 310 , a portion of the thickness of the fine gate lines is removed by a laser etching method. In this way, the influence of the fine gate lines on the preparation process of the perovskite cell layer 200 is reduced, thereby improving the preparation compatibility.

[0049] As can be seen from the foregoing, the present application proposes a design scheme for a crystalline silicon stacked solar cell and a method for manufacturing the same, by introducing a transition connection layer composed of a multi-layer structure to improve the electrical connection performance of the stacked solar cell. The transition connection layer includes a first conductive layer, an intermediate insulating layer and a second conductive layer 330, wherein the first conductive layer effectively promotes the electrical connection between the crystalline silicon heterojunction cell layer and the perovskite cell layer through a unique concave-convex structure, combined with the filling of the intermediate insulating layer and the covering of the second conductive layer 330, thereby significantly improving the carrier collection efficiency. The design of the concave-convex structure is further refined, including bumps and grooves of different sizes, and an intermediate insulating layer is formed by liquid coating technology. The optimization of these technical details not only enhances the photoelectric conversion efficiency of the cell, but also improves the overall performance of the cell by reducing interface light loss.

[0050] In terms of the manufacturing method, a precise and efficient process is adopted, including forming a first conductive layer on a crystalline silicon heterojunction solar cell, etching to form a concave-convex structure, coating an insulating glue layer to form an intermediate insulating layer, and finally forming a second conductive layer 330 and a perovskite cell layer structure. In particular, before forming the first conductive layer, we use laser etching technology to remove part of the fine grid lines, retain part of the fine grid lines to ensure the current conduction capability, thereby further optimizing the cell performance. Through the design of the transition connection layer and the sophisticated manufacturing process, the electrical connection performance is significantly improved, the carrier collection efficiency and the overall performance of the cell are improved, and important technical support is provided for the development of solar cell technology.

[0051] The above is only a specific implementation of the present application, and any other improvements made based on the concept of the present application are deemed to be within the protection scope of the present application.

Claims

1. A crystalline silicon laminated solar cell, characterized in that: include: A crystalline silicon heterojunction battery layer and a perovskite battery layer, wherein a transition connection layer is included between the crystalline silicon heterojunction battery layer and the perovskite battery layer; The transition connection layer includes a first conductive layer, an intermediate insulating layer and a second conductive layer in sequence from the crystalline silicon heterojunction battery layer to the perovskite battery layer; The first conductive layer has a concavo-convex structure on a side away from the crystalline silicon heterojunction battery layer, the intermediate insulating layer is filled in the groove of the concavo-convex structure, and the upper surface of at least part of the convex block protrudes out of the surface of the intermediate insulating layer away from the crystalline silicon heterojunction battery layer; The second conductive layer covers the protruding bumps and the surface of the intermediate insulating layer away from the crystalline silicon heterojunction battery layer, and the second conductive layer is electrically connected to the protruding bumps; The first conductive layer serves as the top transparent oxide conductive layer of the crystalline silicon heterojunction battery layer, and the second conductive layer serves as the bottom transparent oxide conductive layer of the perovskite battery layer.

2. The crystalline silicon tandem solar cell according to claim 1, characterized in that: The concavo-convex structure in the first conductive layer comprises first and second bumps of different sizes and first and second grooves of different sizes, the size of the first bump is larger than the size of the second bump, and the intermediate insulating layer completely covers the second bump.

3. The crystalline silicon tandem solar cell according to claim 2, characterized in that: The second conductive layer has a P1 line of the perovskite cell layer, the first groove is in a long strip shape and its position corresponds to the position of the P1 line, and the width of the first groove is greater than the width of the P1 line.

4. The crystalline silicon tandem solar cell according to claim 2, characterized in that: The intermediate insulating layer is formed by liquid coating.

5. The crystalline silicon tandem solar cell according to claim 1, characterized in that: The refractive indexes of the first conductive layer, the intermediate insulating layer and the second conductive layer decrease in sequence.

6. The crystalline silicon tandem solar cell according to claim 1, characterized in that: The crystalline silicon heterojunction battery layer comprises, from bottom to top, a p-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an n-type silicon substrate, a second intrinsic amorphous silicon layer and an n-type doped amorphous silicon layer.

7. The crystalline silicon tandem solar cell according to claim 1, characterized in that: The first conductive layer includes metal grid lines.

8. A method for manufacturing a crystalline silicon laminated solar cell, characterized in that: include: Forming a first conductive layer on a crystalline silicon heterojunction solar cell, and etching the first conductive layer to form a concave-convex structure; Applying an insulating glue layer to form an intermediate insulating layer, and filling the intermediate insulating layer in the groove of the concave-convex structure, and at least a portion of the upper surface of the convex block protrudes out of the intermediate insulating layer away from the surface of the crystalline silicon heterojunction battery layer; A second conductive layer is formed on the structure having the intermediate insulating layer, and a perovskite cell layer structure is formed on the second conductive layer.

9. The method for manufacturing a crystalline silicon tandem solar cell according to claim 8, characterized in that: The crystalline silicon heterojunction solar cell is a cell with front fine grid lines printed on it.

10. The method for manufacturing a crystalline silicon tandem solar cell according to claim 9, characterized in that: Before forming the first conductive layer, a portion of the thickness of the fine gate lines is removed by laser etching.

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