A silicon carbide vapor phase epitaxial reaction system

Abstract

The invention discloses a silicon carbide vapor phase epitaxial reaction system, relates to the field of semiconductor technology, and aims to solve the technical problem of low efficiency of existing silicon carbide vapor phase epitaxial devices. The system comprises a support frame. A cyclone mechanism is arranged at the top of the reaction mechanism, and a gas phase pipeline is arranged on the inner wall of the reaction mechanism. After Si and C gases are pumped into a reaction chamber, they are evenly mixed by the cyclone mechanism and then exposed to the mixed gas by a gas blocking mechanism and a lifting mechanism, so that a wafer body enters an epitaxial growth state. The invention drives a locking component to drive a rotating component to rotate on a fixed shell, and the rotating component drives the gas blocking shell to achieve a closed state and an unfolded state, thereby achieving precise control of the contact area and contact time between SiC and the surface of the wafer body, thereby achieving precise control of the epitaxial growth process, reducing the failure rate in the epitaxial growth process, improving the product yield, and being conducive to shortening the epitaxial growth time and improving production efficiency.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more specifically, to a silicon carbide vapor phase epitaxial reaction system. Background Art

[0002] With the rapid development of semiconductor technology, silicon carbide (SiC), as a semiconductor material with excellent properties such as wide bandgap, high breakdown electric field strength, and low intrinsic carrier concentration, has shown great application potential in extreme environments such as high voltage, high frequency, and high temperature. SiC power devices have been widely used in power electronics, aerospace, rail transportation, and other fields due to their high voltage resistance, small size, low power consumption, and high temperature resistance.

[0003] Silicon carbide vapor phase epitaxy technology is one of the core technologies for realizing the preparation of SiC power devices, among which the gas pumping and mixing of Si and C are the key links in the epitaxial growth process. However, in actual operation, due to the mixing characteristics of gas floating, Si and C gases often cannot be evenly attached to the substrate after being pumped into the cavity, which becomes an important technical issue affecting the quality of SiC epitaxial growth and device performance. Due to the difference in density and temperature, Si and C gases will float, resulting in uneven distribution of gas in the cavity, and then uneven adhesion of gas on the substrate surface. Uneven gas adhesion will directly affect the growth quality of the SiC epitaxial layer, such as generating growth defects, reducing the uniformity and purity of the epitaxial layer, etc.

[0004] For example, a Chinese invention patent with publication number CN115595662B discloses a gas supply device for a silicon carbide epitaxial chemical vapor deposition system. This technology achieves the effect of uniform reaction gas by changing the gas supply method of the gas supply device of the vapor phase epitaxial system. However, this method still has the problem that the angle and time of the eddy-shaped reaction gas contacting the substrate are not uniform, and it is impossible to achieve exactly the same epitaxial growth effect; moreover, it takes a certain amount of time for the reaction gas to be uniformly fused, and direct injection will cause the reaction gas to adhere to the substrate surface before fusion, resulting in low epitaxial growth efficiency and poor effect; therefore, how to design a silicon carbide vapor phase epitaxial reaction system with uniform gas phase reaction is particularly important; in view of this, we propose a silicon carbide vapor phase epitaxial reaction system. Summary of the invention

[0005] The object of the present invention is to provide a silicon carbide vapor phase epitaxial reaction system to solve the technical problem of low efficiency of existing silicon carbide vapor phase epitaxial devices.

[0006] To solve the above technical problems, the present invention provides the following technical solutions: a silicon carbide vapor phase epitaxial reaction system, comprising a support frame, a reaction mechanism is provided on the support frame, a mounting frame is provided on the back of the reaction mechanism, a cyclone mechanism is provided on the mounting frame, a gas phase pipeline is provided inside the reaction mechanism, an electromagnetic heating coil is provided on the gas phase pipeline, a gas block mechanism is provided at the bottom end of the reaction mechanism, a synchronous lifting mechanism is provided on the gas block mechanism, and a wafer clamping mechanism is provided on the synchronous lifting mechanism; the gas block mechanism comprises a drive locking assembly, a fixed shell, a rotating assembly and a gas block shell, the drive locking assembly is installed on the outer wall of the reaction mechanism, the fixed shell is provided at the bottom end of the reaction mechanism, the rotating assembly is rotatably connected to the fixed shell, one end of a plurality of the gas block shells is rotatably connected to the rotating assembly, the other end of the gas block shell is movably connected to the fixed shell, and the synchronous lifting mechanism is connected to the bottom end of the rotating assembly.

[0007] Preferably, a mounting hole is provided on the outer wall of the reaction mechanism, and the drive locking assembly is installed on the mounting hole; the drive locking assembly includes a reduction motor and a worm, and the reduction motor is arranged on the outer wall of the reaction mechanism close to the mounting hole, one end of the worm is rotatably connected to the mounting hole, and the other end of the worm is connected to the output end of the reduction motor.

[0008] Preferably, the fixed shell includes a fixed base, a shell wall, a rotating hole and a rotating block, the fixed base is arranged at the bottom end of the reaction mechanism, the shell wall is arranged on the fixed base, the rotating holes are opened on the fixed base in a circular shape with equal intervals, the rotating blocks are arranged on the outer wall of the shell wall in a circular shape with equal intervals, the rotating assembly is rotatably arranged on the fixed base, and one end of the air-blocking shell away from the rotating assembly is movably connected to the rotating block.

[0009] Preferably, the rotating assembly includes a rotating shell, a worm gear and a limit block. The rotating shell is rotatably connected to the fixed base near the outer side of the shell wall. The worm gear is sleeved on the outer wall of the rotating shell. The limit blocks are arranged in a ring shape and at equal intervals on the inner wall of the rotating shell. The worm gear is meshingly connected to the worm, and the end of the air resistance shell away from the rotating block is rotatably connected to the limit block.

[0010] Preferably, a rotating hole is provided at one end of the air resistance shell, and a sliding hole is provided at the other end of the air resistance shell. One end of the air resistance shell is movably mounted on the limit block through the sliding hole, and the other end of the air resistance shell is rotatably mounted on the rotating block through the rotating hole.

[0011] Preferably, the synchronous lifting mechanism includes a linkage component and a lifting component, the linkage component is rotatably connected to the inner wall of the fixed base, the lifting component is movably connected to the inner wall of the linkage component, and the wafer clamping mechanism is arranged at the top of the lifting component.

[0012] Preferably, the linkage assembly includes a connecting arm, a rotating cylinder and a spiral groove. The rotating cylinder is rotatably arranged on the inner wall of the fixed base. The connecting arms are arranged in a circular shape at equal intervals at the bottom end of the rotating cylinder. One end of the connecting arm away from the rotating cylinder is movably passed through the rotating hole and connected to the bottom end of the rotating shell. The spiral groove is opened on the rotating cylinder, and the lifting assembly is movably connected to the spiral groove.

[0013] Preferably, the lifting assembly includes a lifting column and a sliding rod, the lifting column is movably connected to the inner wall of the rotating cylinder, one end of the sliding rod is connected to the outer wall of the lifting column, and the other end of the sliding rod is movably connected to the spiral groove, and the wafer clamping mechanism is arranged at the top of the lifting column; a mounting groove is provided at the top of the lifting column, a connecting hole is provided on the inner wall of the mounting groove, and a sliding groove is provided at the bottom of the connecting hole, and the wafer clamping mechanism is provided on the mounting groove, the connecting hole and the sliding groove.

[0014] Preferably, the wafer clamping mechanism comprises a rotating disk, a torque member, a fixed disk and a clamping block, the rotating disk is rotatably connected to the mounting groove, the torque member is arranged on the connecting hole and the slide groove, the fixed disk is installed on the top of the lifting column, one end of the clamping block is movably connected to the fixed disk, and the other end of the clamping block is movably connected to the rotating disk.

[0015] Preferably, the torsion member includes a connecting rod, a spring and a slider, one end of the connecting rod is connected to the outer wall of the rotating disk, the other end of the connecting rod is movably connected to the connecting hole, the slider is slidably arranged on the slide groove, and the spring is symmetrically connected to the slider; the rotating disk is provided with curved grooves in an annular shape with equal intervals, the fixed disk is provided with guide grooves in an annular shape with equal intervals, a guide block is provided at the bottom end of the clamping block, a guide rod is provided at the bottom end of the guide block, the guide block is movably connected to the guide groove, the guide rod is movably connected to the curved groove, and the inner wall of the clamping block is also provided with special-shaped grooves A and B.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1. The present invention improves the structure of the existing silicon carbide vapor phase epitaxial reaction device by arranging a cyclone mechanism at the top of the reaction mechanism, arranging a gas phase pipeline on the inner wall of the reaction mechanism, and winding an electromagnetic heating coil on the gas phase pipeline. After Si and C gases are pumped into the reaction chamber, they are evenly mixed by the cyclone mechanism and then exposed to the mixed gas through the gas blockage mechanism and the lifting mechanism to enter the epitaxial growth state. The present invention drives the locking component to drive the rotating component to rotate on the fixed shell, and the rotating component drives the gas blockage shell to achieve the closed state and the expanded state, thereby achieving precise control of the contact area and contact time between SiC and the surface of the wafer body, thereby achieving precise control of the epitaxial growth process, reducing the failure rate in the epitaxial growth process, and improving the product yield, which is beneficial to shortening the epitaxial growth time and improving production efficiency.

[0018] 2. The present invention arranges a rotating cylinder rotatably on the inner wall of a fixed base, and arranges four connecting arms at the bottom end of the rotating cylinder which are connected to the bottom end of a rotating shell through rotating holes. When the worm and the worm wheel engage to drive the rotating shell to rotate on the fixed base, the rotating shell drives the connecting arms and the rotating cylinder to rotate, and the rotation of the rotating cylinder drives the spiral groove to rotate. Since the sliding rod of the lifting assembly slides on the spiral groove, the lifting column can rise and fall on the inner wall of the rotating cylinder. When the air blockage shell is closed, the lifting column can be retracted and lowered, and when the air blockage shell is opened, the lifting column can be extended and raised, thereby achieving a synchronous movement effect, further enabling the wafer to contact the mixed SiC gas more efficiently and evenly, thereby improving the efficiency of epitaxial growth.

[0019] 3. The present invention provides a mounting groove at the top of the lifting column, and the rotating disk of the wafer clamping mechanism is rotatably arranged on the mounting groove. When the wafer body is arranged, the rotating disk is driven to rotate on the mounting groove by pressing the connecting rod of the torsion piece, and the rotating disk drives a plurality of curved grooves to rotate. The rotation of the curved groove enables the guide rod to drive the guide block to slide on the guide groove of the fixed plate, and the guide block drives the clamping block at its top to unfold. After the wafer body is placed in, the rebound force of the spring pushes the slider to slide on the slide groove, and the connecting rod is squeezed to realize the cross-shaped clamping of the wafer body. The special-shaped groove A provided on the clamping block is in the shape of an arc, and the special-shaped groove B is in the shape of a rectangular sharp corner. The four special-shaped grooves A cooperate to clamp the circular wafer body, and the four special-shaped grooves B cooperate to clamp the square wafer body, so that the present invention can adapt to wafer bodies of different sizes and different materials, and realize the needs of various silicon carbide epitaxial growth, thereby shortening the clamping time of the wafer body, without the need to replace the fixture, and further improving its epitaxial growth efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0021] Figure 2 It is a schematic diagram of the internal cross-sectional structure of the present invention;

[0022] Figure 3 It is a schematic diagram of the cross-section of the reaction mechanism, the gas blocking mechanism, the synchronous lifting mechanism and the wafer clamping mechanism of the present invention;

[0023] Figure 4 It is a schematic diagram of the structure of the air resistance mechanism of the present invention;

[0024] Figure 5 It is a schematic diagram of the split structure of the air resistance mechanism of the present invention;

[0025] Figure 6 It is a cross-sectional view of the fixed shell, the rotating assembly and the schematic diagram of the air-blocking shell structure of the present invention;

[0026] Figure 7 It is a structural schematic diagram of the synchronous lifting mechanism and wafer clamping mechanism of the present invention;

[0027] Figure 8 It is a schematic diagram of the linkage assembly structure of the present invention;

[0028] Fig. 9 It is a schematic diagram of the structure of the lifting assembly and wafer clamping mechanism of the present invention;

[0029] Fig.10 It is a schematic diagram of the disassembled structure of the lifting assembly and wafer clamping mechanism of the present invention;

[0030] Fig.11 It is a cross-sectional view of the lifting assembly of the present invention and a schematic diagram of a part of the wafer clamping mechanism structure;

[0031] Fig.12 This is a schematic diagram of the use state of the present invention when clamping a circular wafer;

[0032] Fig.13 It is a schematic diagram of the use state of the present invention when clamping a square wafer.

[0033] Description of the numbers in the figure:

[0034] 1. Support frame; 2. Reaction mechanism; 3. Mounting frame; 4. Cyclone mechanism; 5. Gas phase pipeline; 6. Electromagnetic heating coil; 7. Gas resistance mechanism; 8. Synchronous lifting mechanism; 9. Wafer clamping mechanism;

[0035] 201, mounting hole;

[0036] 701, drive locking assembly; 702, fixed shell; 703, rotating assembly; 704, air resistance shell;

[0037] 801, linkage assembly; 802, lifting assembly;

[0038] 901, rotating disk; 902, torque member; 903, fixed disk; 904, clamping block;

[0039] 7011, reduction motor; 7012, worm;

[0040] 7021, fixed base; 7022, shell wall; 7023, rotating hole; 7024, limit block;

[0041] 7031, rotating housing; 7032, worm gear; 7033, rotating block;

[0042] 7041, rotating hole; 7042, sliding hole;

[0043] 8011, connecting arm; 8012, rotating cylinder; 8013, spiral groove;

[0044] 8021, lifting column; 8022, sliding rod; 8023, mounting groove; 8024, connecting hole; 8025, sliding groove;

[0045] 9011, curved groove;

[0046] 9021, connecting rod; 9022, spring; 9023, slider;

[0047] 9031, guide groove;

[0048] 9041. Guide block; 9042. Guide rod; 9043. Special-shaped groove A; 9044. Special-shaped groove B. DETAILED DESCRIPTION

[0049] like Figures 1 to 13As shown, the present invention relates to a silicon carbide vapor phase epitaxial reaction system, comprising a support frame 1, a reaction mechanism 2 is arranged on the support frame 1, a mounting frame 3 is arranged on the back of the reaction mechanism 2, a cyclone mechanism 4 is arranged on the mounting frame 3, a gas phase pipeline 5 is arranged inside the reaction mechanism 2, an electromagnetic heating coil 6 is arranged on the gas phase pipeline 5, a gas blocking mechanism 7 is arranged at the bottom end of the reaction mechanism 2, a synchronous lifting mechanism 8 is arranged on the gas blocking mechanism 7, and a wafer clamping mechanism 9 is arranged on the synchronous lifting mechanism 8; the gas blocking mechanism 7 comprises a driving locking assembly 701, a fixed shell 702, a rotating assembly 703 and a gas blocking shell 704, the driving locking assembly 701 is installed on the outer wall of the reaction mechanism 2, the fixed shell 702 is arranged at the bottom end of the reaction mechanism 2, the rotating assembly 703 is rotatably connected to the fixed shell 702, one end of a plurality of gas blocking shells 704 is rotatably connected to the rotating assembly 703, the other end of the gas blocking shell 704 is movably connected to the fixed shell 702, and the synchronous lifting mechanism 8 is connected to the bottom end of the rotating assembly 703. The present invention improves the structure of the existing silicon carbide vapor phase epitaxial reaction device by arranging a cyclone mechanism 4 at the top of the reaction mechanism 2, arranging a gas phase pipeline 5 on the inner wall of the reaction mechanism 2, and winding an electromagnetic heating coil 6 on the gas phase pipeline 5. After Si and C gases are pumped into the reaction chamber, they are evenly mixed by the cyclone mechanism 4 and then exposed to the mixed gas by the gas blocking mechanism 7 and the lifting mechanism 8, thereby entering the epitaxial growth state; the present invention drives the locking component 701 to drive the rotating component 703 to rotate on the fixed shell 702, and the rotating component 703 drives the gas blocking shell 704 to achieve the closed state and the expanded state, thereby achieving precise control of the contact area and contact time between SiC and the surface of the wafer body, thereby achieving precise control of the epitaxial growth process, reducing the failure rate in the epitaxial growth process, improving the product yield, and being beneficial to shortening the epitaxial growth time and improving production efficiency.

[0050] In an embodiment of the present invention, a mounting hole 201 is provided on the outer wall of the reaction mechanism 2, and the drive locking assembly 701 is installed on the mounting hole 201; the drive locking assembly 701 includes a reduction motor 7011 and a worm 7012, the reduction motor 7011 is arranged on the outer wall of the reaction mechanism 2 near the mounting hole 201, one end of the worm 7012 is rotatably connected to the mounting hole 201, and the other end of the worm 7012 is connected to the output end of the reduction motor 7011. The present invention opens a mounting hole 201 on the outer wall of the reaction mechanism 2, and mounts the worm 7012 driving the locking assembly 701 on the mounting hole 201. The worm 7012 is driven by a reduction motor 7011 to achieve forward and reverse rotation. The worm 7012 is rotatably set on the mounting hole 201, and one side of the worm 7012 is connected to the rotating assembly 703 to drive the rotating assembly 703 to rotate. The method of the worm 7012 driving the rotating assembly 703 of the present invention can not only realize opening and closing through forward and reverse rotation, but also realize the self-locking effect through the principle of worm gears. There is no need to set an additional locking structure to increase cost and failure probability, which is beneficial to enterprises to reduce costs and increase efficiency.

[0051] In an embodiment of the present invention, the fixed shell 702 includes a fixed base 7021, a shell wall 7022, a rotating hole 7023 and a rotating block 7024. The fixed base 7021 is arranged at the bottom end of the reaction mechanism 2, the shell wall 7022 is arranged on the fixed base 7021, the rotating holes 7023 are arranged in a circular shape with equal intervals on the fixed base 7021, the rotating blocks 7024 are arranged in a circular shape with equal intervals on the outer wall of the shell wall 7022, the rotating assembly 703 is rotatably arranged on the fixed base 7021, and the end of the air-blocking shell 704 away from the rotating assembly 703 is movably connected to the rotating block 7024. The present invention sets a fixed base 7021 at the bottom end of the reaction mechanism 2, sets a shell wall 7022 at the top end of the fixed base 7021, opens four rotating holes 7023 at the bottom end of the fixed base 7021 near the outer side of the bottom end outer wall of the shell wall 7022, and arranges four rotating blocks 7024 on the shell wall 7022 at equal intervals in a ring, so that when the driving locking component 701 drives the rotating component 703 to rotate on the fixed base 7021, the four gas blocking shells 704 are driven to move, and the gas in the reaction mechanism 2 contacts the surface of the wafer body after being fully fused, thereby ensuring that the SiC mixed gas enters the gas blocking mechanism evenly and stably and contacts the wafer body, thereby avoiding the problem of uneven gas distribution that may exist in traditional reaction devices.

[0052] As another embodiment of the present invention, the rotating assembly 703 includes a rotating shell 7031, a worm gear 7032 and a limit block 7033. The rotating shell 7031 is rotatably connected to the fixed base 7021 near the outer side of the shell wall 7022. The worm gear 7032 is sleeved on the outer wall of the rotating shell 7031. The limit blocks 7033 are arranged in a ring shape and at equal intervals on the inner wall of the rotating shell 7031. The worm gear 7032 is meshedly connected to the worm 7012, and the end of the air resistance shell 704 away from the rotating block 7024 is rotatably connected to the limit block 7033. The present invention sets a rotating shell 7031 at a position close to the outer side of the shell wall 7022 on the fixed base 7021, and a worm gear 7032 is set on the outer wall of the rotating shell 7031. The reduction motor 7011 drives the worm 7012 to rotate. The worm 7012 is engaged with the worm gear 7032 to drive the rotating shell 7031 to rotate on the fixed base 7021. The rotating shell 7031 drives the limit block 7033 to rotate. The limit block 7033 enables a plurality of gas blocking shells 704 to move. The mixed SiC gas is evenly distributed on the surface of the wafer to form a uniform and high-quality epitaxial layer, which helps to improve the epitaxial growth quality and efficiency of the product.

[0053] As another embodiment of the present invention, a rotating hole 7041 is opened at one end of the air resistance shell 704, and a sliding hole 7042 is opened at the other end of the air resistance shell 704. One end of the air resistance shell 704 is movably mounted on the limit block 7033 through the sliding hole 7042, and the other end of the air resistance shell 704 is rotatably mounted on the rotating block 7024 through the rotating hole 7041. The present invention provides a rotating hole 7041 and a sliding hole 7042 on the air-blocking shell 704. When the reduction motor 7011 is driven to drive the worm 7012 to rotate, the worm 7012 is meshed with the worm wheel 7032 to drive the rotating shell 7031 to rotate on the fixed base 7021. The rotating shell 7031 drives the limit block 7033 to rotate. Since the rotating hole 7041 is rotatably sleeved on the rotating block 7024, when rotating, the limit block 7033 slides in the sliding hole 7042 so that a plurality of air-blocking shells 704 move and cooperate to form a closed shell, so that the mixed SiC gas contacts the surface of the wafer body evenly and efficiently. The efficient growth process shortens the production cycle and reduces the production cost.

[0054] As another embodiment of the present invention, the synchronous lifting mechanism 8 includes a linkage component 801 and a lifting component 802, the linkage component 801 is rotatably connected to the inner wall of the fixed base 7021, the lifting component 802 is movably connected to the inner wall of the linkage component 801, and the wafer clamping mechanism 9 is arranged at the top of the lifting component 802.

[0055] The linkage assembly 801 includes a connecting arm 8011, a rotating cylinder 8012 and a spiral groove 8013. The rotating cylinder 8012 is rotatably arranged on the inner wall of the fixed base 7021. The connecting arms 8011 are arranged in a ring shape at equal intervals at the bottom end of the rotating cylinder 8012. One end of the connecting arm 8011 away from the rotating cylinder 8012 is movably passed through the rotating hole 7023 and connected to the bottom end of the rotating shell 7031. The spiral groove 8013 is opened on the rotating cylinder 8012, and the lifting assembly 802 is movably connected to the spiral groove 8013. The lifting assembly 802 includes a lifting column 8021 and a sliding rod 8022. The lifting column 8021 is movably connected to the inner wall of the rotating cylinder 8012. One end of the sliding rod 8022 is connected to the outer wall of the lifting column 8021. The other end of the sliding rod 8022 is movably connected to the spiral groove 8013. The wafer clamping mechanism 9 is arranged at the top of the lifting column 8021. The present invention is to rotatably set the rotating cylinder 8012 on the inner wall of the fixed base 7021, and to set four connecting arms 8011 at the bottom end of the rotating cylinder 8012 and connect them to the bottom end of the rotating shell 7031 through the rotating hole 7023. When the worm 7012 is engaged with the worm wheel 7032, the rotating shell 7031 is driven to rotate on the fixed base 7021. When the base 7021 rotates, the rotating shell 7031 drives the connecting arm 8011 and the rotating cylinder 8012 to rotate, and the rotation of the rotating cylinder 8012 drives the spiral groove 8013 to rotate. Since the sliding rod 8022 of the lifting assembly 802 slides on the spiral groove 8013, the lifting column 8021 can rise and fall on the inner wall of the rotating cylinder 8012, so that when the air blocking shell 704 is closed, the lifting column 8021 can be lowered and retracted, and when the air blocking shell 704 is opened, the lifting column 8021 can be raised and extended, thereby achieving the effect of synchronous movement, further enabling the wafer body to contact the mixed SiC gas more efficiently and evenly, thereby improving the efficiency of epitaxial growth.

[0056] As another embodiment of the present invention, a mounting groove 8023 is provided at the top of the lifting column 8021, a connecting hole 8024 is provided on the inner wall of the mounting groove 8023, a slide groove 8025 is provided at the bottom of the connecting hole 8024, and a wafer clamping mechanism 9 is arranged on the mounting groove 8023, the connecting hole 8024 and the slide groove 8025. The wafer clamping mechanism 9 includes a rotating disk 901, a torque member 902, a fixed disk 903 and a clamping block 904, the rotating disk 901 is rotatably connected to the mounting groove 8023, the torque member 902 is arranged on the connecting hole 8024 and the slide groove 8025, the fixed disk 903 is installed at the top of the lifting column 8021, one end of the clamping block 904 is movably connected to the fixed disk 903, and the other end of the clamping block 904 is movably connected to the rotating disk 901.

[0057] The torsion member 902 includes a connecting rod 9021, a spring 9022 and a slider 9023. One end of the connecting rod 9021 is connected to the outer wall of the rotating disk 901, and the other end of the connecting rod 9021 is movably connected to the connecting hole 8024. The slider 9023 is slidably arranged on the slide groove 8025, and the spring 9022 is symmetrically connected to the slider 9023. Curved grooves 9011 are arranged in an annular shape with equal intervals on the rotating disk 901, and guide grooves 9031 are arranged in an annular shape with equal intervals on the fixed disk 903. A guide block 9041 is arranged at the bottom end of the clamping block 904, and a guide rod 9042 is arranged at the bottom end of the guide block 9041. The guide block 9041 is movably connected to the guide groove 9031, and the guide rod 9042 is movably connected to the curved groove 9011. A special-shaped groove A9043 and a special-shaped groove B9044 are also arranged on the inner wall of the clamping block 904. The present invention provides a mounting groove 8023 at the top of the lifting column 8021, and the rotating disk 901 of the wafer clamping mechanism 9 is rotatably arranged on the mounting groove 8023. When the wafer body is arranged, the connecting rod 9021 of the torque member 902 is pressed to drive the rotating disk 901 to rotate on the mounting groove 8023, and the rotating disk 901 drives a plurality of curved grooves 9011 to rotate. The curved grooves 9011 rotate so that the guide rod 9042 drives the guide block 9041 to slide on the guide groove 9031 of the fixed plate 903, and the guide block 9041 drives the clamping block 904 at the top thereof to expand. After the wafer body is placed, the spring 902 The rebound force of 2 pushes the slider 9023 to slide on the slide groove 8025, squeezing the connecting rod 9021 to achieve a cross-shaped clamping of the wafer body. The special-shaped groove A9043 opened on the clamping block 904 is in an arc shape, and the special-shaped groove B9044 is in a rectangular sharp corner shape. The four special-shaped grooves A9043 are used to clamp the round wafer body, and the four special-shaped grooves B9044 are used to clamp the square wafer body. The present invention can adapt to wafer bodies of different sizes and different materials, and realize the needs of various silicon carbide epitaxial growth, thereby shortening the clamping time of the wafer body, without the need to replace the fixture, and further improving its epitaxial growth efficiency.

[0058] Working principle: When the present invention is in use, firstly, the connecting rod 9021 of the torque member 902 is pressed to drive the rotating disk 901 to rotate on the installation groove 8023, and the rotating disk 901 drives the plurality of curved grooves 9011 to rotate. The rotation of the curved groove 9011 causes the guide rod 9042 to drive the guide block 9041 to slide on the guide groove 9031 of the fixed disk 903, and the guide block 9041 drives the clamping block 904 at its top to unfold. After the wafer body is put in, the rebound force of the spring 9022 pushes the slider 9023 to slide on the slide groove 8025, and squeezes the connecting rod 9021 to realize the cross-shaped clamping of the wafer body. The special-shaped groove A9043 on the clamping block 904 is in the shape of an arc, and the special-shaped groove B9044 is in the shape of a rectangular sharp corner. The four special-shaped grooves A9043 cooperate to clamp the circular wafer body, and the four special-shaped grooves B9044 cooperate to clamp the square wafer body.

[0059] After the wafer body is clamped, the reduction motor 7011 is driven to rotate forward, driving the worm 7012 to rotate. The worm 7012 is meshed with the worm wheel 7032 to drive the rotating shell 7031 to rotate on the fixed base 7021. The rotating shell 7031 drives the limit block 7033 to rotate. Since the rotating hole 7041 is rotatably sleeved on the rotating block 7024, when rotating, the limit block 7033 slides in the sliding hole 7042, so that the air resistance shells 704 move and cooperate to form a closed state. At the same time, the rotating shell 7031 drives The connecting arm 8011 and the rotating cylinder 8012 rotate, and the rotating cylinder 8012 rotates to drive the spiral groove 8013 to rotate. Since the sliding rod 8022 of the lifting assembly 802 slides on the spiral groove 8013, the lifting column 8021 descends on the inner wall of the rotating cylinder 8012, so that when the gas resistance shell 704 is closed, the lifting column 8021 is lowered and retracted; at this time, Si and C gases are pumped into the interior of the reaction mechanism 2 through the gas phase pipeline 5, and then blown by the cyclone mechanism 4 to generate a vortex so that the two gases are evenly mixed;

[0060] After the gas is fully mixed, the reduction motor 7011 is driven to reverse, driving the worm 7012 to rotate. The worm 7012 is meshed with the worm wheel 7032 to drive the rotating shell 7031 to rotate on the fixed base 7021. The rotating shell 7031 drives the limit block 7033 to rotate. Since the rotating hole 7041 is rotatably sleeved on the rotating block 7024, when rotating, the limit block 7033 slides in the sliding hole 7042, so that the several air-blocking shells 704 move and cooperate to form an open state. The rotating shell 7031 drives the connecting arm 8011 and the rotating cylinder 8012 to rotate, and the rotation of the rotating cylinder 8012 drives the spiral groove 8013 to rotate. Since the sliding rod 8022 of the lifting assembly 802 slides on the spiral groove 8013, the lifting column 8021 rises on the inner wall of the rotating cylinder 8012. When the gas blocking shell 704 is opened, the lifting column 8021 rises and extends outward so that the wafer body contacts the uniformly mixed gas, and finally the epitaxial growth is realized by heating through the electromagnetic heating coil 6.

[0061] The embodiments of the present invention disclose preferred embodiments, but are not limited thereto. A person skilled in the art can easily understand the spirit of the present invention based on the above embodiments and make different extensions and changes. However, as long as they do not deviate from the spirit of the present invention, they are all within the protection scope of the present invention.

Claims

1. A silicon carbide vapor phase epitaxial reaction system, characterized in that: The invention comprises a support frame (1), a reaction mechanism (2) is arranged on the support frame (1), a mounting frame (3) is arranged on the back of the reaction mechanism (2), a cyclone mechanism (4) is arranged on the mounting frame (3), a gas phase pipeline (5) is arranged inside the reaction mechanism (2), an electromagnetic heating coil (6) is arranged on the gas phase pipeline (5), a gas blocking mechanism (7) is arranged at the bottom end of the reaction mechanism (2), a synchronous lifting mechanism (8) is arranged on the gas blocking mechanism (7), and a wafer clamping mechanism (9) is arranged on the synchronous lifting mechanism (8); The air-blocking mechanism (7) comprises a driving locking assembly (701), a fixed shell (702), a rotating assembly (703) and an air-blocking shell (704); the driving locking assembly (701) is mounted on the outer wall of the reaction mechanism (2); the fixed shell (702) is arranged at the bottom end of the reaction mechanism (2); the rotating assembly (703) is rotatably connected to the fixed shell (702); one end of a plurality of air-blocking shells (704) is rotatably connected to the rotating assembly (703); the other end of the air-blocking shell (704) is movably connected to the fixed shell (702); and the synchronous lifting mechanism (8) is connected to the bottom end of the rotating assembly (703); The reaction mechanism (2) has an installation hole (201) on its outer wall, and the drive locking assembly (701) is installed on the installation hole (201); The driving locking assembly (701) comprises a reduction motor (7011) and a worm (7012); the reduction motor (7011) is arranged on the outer wall of the reaction mechanism (2) at a position close to the mounting hole (201); one end of the worm (7012) is rotatably connected to the mounting hole (201); and the other end of the worm (7012) is connected to the output end of the reduction motor (7011); The fixed shell (702) comprises a fixed base (7021), a shell wall (7022), a rotating hole (7023) and a rotating block (7024); the fixed base (7021) is arranged at the bottom end of the reaction mechanism (2); the shell wall (7022) is arranged on the fixed base (7021); the rotating holes (7023) are arranged on the fixed base (7021) in a circular shape and at equal intervals; the rotating blocks (7024) are arranged on the outer wall of the shell wall (7022) in a circular shape and at equal intervals; the rotating assembly (703) is rotatably arranged on the fixed base (7021); and one end of the air-blocking shell (704) away from the rotating assembly (703) is movably connected to the rotating block (7024); The rotating assembly (703) comprises a rotating shell (7031), a worm gear (7032) and a stop block (7033); the rotating shell (7031) is rotatably connected to a position of the fixed base (7021) close to the outer side of the shell wall (7022); the worm gear (7032) is sleeved on the outer wall of the rotating shell (7031); the stop blocks (7033) are arranged in a ring shape and at equal intervals on the inner wall of the rotating shell (7031); the worm gear (7032) is meshedly connected to the worm (7012); and one end of the air-blocking shell (704) away from the rotating block (7024) is rotatably connected to the stop block (7033); A rotating hole (7041) is provided at one end of the air resistance shell (704), and a sliding hole (7042) is provided at the other end of the air resistance shell (704). One end of the air resistance shell (704) is movably mounted on the limit block (7033) through the sliding hole (7042), and the other end of the air resistance shell (704) is rotatably mounted on the rotating block (7024) through the rotating hole (7041).

2. A silicon carbide vapor phase epitaxial reaction system according to claim 1, characterized in that: The synchronous lifting mechanism (8) comprises a linkage component (801) and a lifting component (802); the linkage component (801) is rotatably connected to the inner wall of the fixed base (7021); the lifting component (802) is movably connected to the inner wall of the linkage component (801); and the wafer clamping mechanism (9) is arranged at the top of the lifting component (802).

3. A silicon carbide vapor phase epitaxial reaction system according to claim 2, characterized in that: The linkage assembly (801) comprises a connecting arm (8011), a rotating cylinder (8012) and a spiral groove (8013); the rotating cylinder (8012) is rotatably arranged on the inner wall of the fixed base (7021); the connecting arm (8011) is arranged in a circular shape at equal intervals at the bottom end of the rotating cylinder (8012); one end of the connecting arm (8011) away from the rotating cylinder (8012) is movably passed through the rotating hole (7023) and connected to the bottom end of the rotating shell (7031); the spiral groove (8013) is opened on the rotating cylinder (8012); and the lifting assembly (802) is movably connected to the spiral groove (8013).

4. A silicon carbide vapor phase epitaxial reaction system according to claim 3, characterized in that: The lifting assembly (802) comprises a lifting column (8021) and a sliding rod (8022), wherein the lifting column (8021) is movably connected to the inner wall of the rotating cylinder (8012), one end of the sliding rod (8022) is connected to the outer wall of the lifting column (8021), and the other end of the sliding rod (8022) is movably connected to the spiral groove (8013), and the wafer clamping mechanism (9) is arranged at the top of the lifting column (8021); The top of the lifting column (8021) is provided with a mounting groove (8023), the inner wall of the mounting groove (8023) is provided with a connecting hole (8024), the bottom of the connecting hole (8024) is provided with a sliding groove (8025), and the wafer clamping mechanism (9) is arranged on the mounting groove (8023), the connecting hole (8024) and the sliding groove (8025).

5. A silicon carbide vapor phase epitaxial reaction system according to claim 4, characterized in that: The wafer clamping mechanism (9) comprises a rotating disk (901), a torque member (902), a fixed disk (903) and a clamping block (904); the rotating disk (901) is rotatably connected to the mounting groove (8023); the torque member (902) is arranged on the connecting hole (8024) and the sliding groove (8025); the fixed disk (903) is installed on the top of the lifting column (8021); one end of the clamping block (904) is movably connected to the fixed disk (903); and the other end of the clamping block (904) is movably connected to the rotating disk (901).

6. A silicon carbide vapor phase epitaxial reaction system according to claim 5, characterized in that: The torsion member (902) comprises a connecting rod (9021), a spring (9022) and a slider (9023); one end of the connecting rod (9021) is connected to the outer wall of the rotating disk (901); the other end of the connecting rod (9021) is movably connected to the connecting hole (8024); the slider (9023) is slidably arranged on the sliding groove (8025); and the spring (9022) is symmetrically connected to the slider (9023); The rotating disk (901) is provided with curved grooves (9011) at equal intervals in a circular shape, the fixed disk (903) is provided with guide grooves (9031) at equal intervals in a circular shape, the bottom end of the clamping block (904) is provided with a guide block (9041), the bottom end of the guide block (9041) is provided with a guide rod (9042), the guide block (9041) is movably connected to the guide groove (9031), the guide rod (9042) is movably connected to the curved groove (9011), and the inner wall of the clamping block (904) is also provided with a special-shaped groove A (9043) and a special-shaped groove B (9044).

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