A method, device, equipment and medium for detecting hot spots after chemical mechanical polishing

Abstract

The present invention relates to the field of chemical mechanical polishing, and in particular to a method, device, equipment and medium for hotspot inspection after chemical mechanical polishing, which determines the corresponding minimum angle by using a pre-stored angle-line width-spacing function according to the pattern line width and pattern spacing of a mask layout to be inspected; simulates the mask layout to be inspected to obtain the metal layer height at each position of the mask layout to be inspected; determines the corresponding minimum height of the metal layer according to the metal layer height at each position of the mask layout to be inspected; determines the maximum grinding height difference according to the oxide layer height before grinding and the minimum height of the metal layer; determines the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; simulates the mask layout to be inspected to obtain a contour map before grinding; determines potential hotspots according to the maximum pattern edge displacement and the contour map before grinding. The present invention quickly determines potential hotspots and improves the yield of finished products.

Description

Technical Field

[0001] The invention relates to the field of chemical mechanical polishing, and in particular to a method, device, equipment and medium for inspecting hot spots after chemical mechanical polishing. Background Art

[0002] Hotspot refers to potential defects in integrated circuit manufacturing. Common hotspots include pinching, bridging, etc. For a given integrated circuit mask layout, there are two main methods for hotspot detection. One is to use process models, such as lithography models (optical proximity correction models, i.e., OPC models) and etching models, to obtain simulated post-lithography contours and post-etching contours, and then scan the simulated contours according to a preset threshold. When a certain part of the simulated contour is less than the threshold, it is determined to be a related hotspot. The lithography or etching model used here needs to be corrected by actual chip measurement data, such as key dimension data, to meet the accuracy requirements of chip contour prediction. This method is widely used in the process of mask data generation (tapeout), and can predict different types of hotspots. Another commonly used hotspot detection method is based on machine learning, which uses known defects to train machine learning models, establishes a mapping relationship between hotspot layouts and chip defects through relevant feature vectors, and then predicts hotspots on new mask layouts through the trained defect prediction model.

[0003] However, chip defects not only appear after the photolithography and etching processes, but also after the chemical mechanical polishing process. In the actual chip production process, for a part of a mask layout, it is often the case that the chip has no defects after photolithography and etching, but has defects after chemical mechanical polishing. This is because the sidewall angle of the chip pattern itself is not 90 degrees, and the change in chip height will also affect the plane profile of the chip. Therefore, hotspot detection after the chemical mechanical polishing process is equally important, but there is no effective method for detecting hotspots on the chip surface after polishing in the current related technology.

[0004] Therefore, how to detect hot spots on the surface of the chip after grinding to improve the finished product yield of the chip is a problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] The purpose of the present invention is to provide a method, device, equipment and medium for detecting hot spots after chemical mechanical polishing, so as to solve the problem that the hot spots after chemical mechanical polishing of chips are neglected in the prior art, resulting in low finished product yield.

[0006] In order to solve the above technical problems, the present invention provides a hot spot inspection method after chemical mechanical polishing, comprising:

[0007] According to the pattern line width and pattern spacing of the mask to be detected, the corresponding minimum angle is determined using a pre-stored angle-line width-spacing function;

[0008] Using a chemical mechanical polishing model, the mask pattern to be inspected is simulated to obtain the height of the metal layer at each position of the mask pattern to be inspected;

[0009] Determine the minimum height of the corresponding metal layer according to the height of the metal layer at each position of the mask pattern to be detected;

[0010] Determining the maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer;

[0011] Determining a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle;

[0012] Using a photolithography model and an etching model, the mask pattern to be inspected is simulated to obtain a pre-grinding contour map;

[0013] Potential hot spots are determined based on the maximum pattern edge displacement and the pre-grinding profile.

[0014] Optionally, in the hotspot inspection method after chemical mechanical polishing, determining the potential hotspot according to the maximum pattern edge displacement and the pre-polishing contour image includes:

[0015] According to the maximum pattern edge displacement, the boundary between the metal layer and the oxide layer at each position on the pre-grinding contour image is moved toward the inside of the pattern to obtain an inward predicted contour image;

[0016] Traversing each position on the inward prediction contour map to determine whether there is a point where the corresponding pattern line width is less than a preset disconnection threshold;

[0017] When there is a point on the inward prediction contour map whose corresponding pattern line width is smaller than the disconnection threshold, the point whose corresponding pattern line width is smaller than the disconnection threshold is taken as the potential hotspot;

[0018] and / or

[0019] Determining potential hot spots according to the maximum pattern edge displacement and the pre-grinding profile diagram includes:

[0020] According to the maximum pattern edge displacement, the boundary between the metal layer and the oxide layer at each position on the pre-grinding contour image is moved toward the outside of the pattern to obtain an outward expansion prediction contour image;

[0021] Traversing each position on the outward expansion prediction contour map to determine whether there is a point where the corresponding pattern spacing is less than a preset short-circuit threshold;

[0022] When there are points on the outward expansion prediction contour map whose corresponding pattern spacing is smaller than the short-circuit threshold, the points whose corresponding pattern line width is smaller than the short-circuit threshold are taken as the potential hot spots.

[0023] Optionally, in the hot spot inspection method after chemical mechanical polishing, determining the maximum polishing height difference according to the oxide layer height before polishing and the minimum height of the metal layer; and determining the maximum pattern edge displacement according to the maximum polishing height difference and the minimum angle comprises:

[0024] According to the oxide layer height before grinding, the minimum height of the metal layer and the minimum angle, the maximum pattern edge displacement is determined by the following formula:

[0025] D max =(H 0 -H min ) / tan(θ min );

[0026] Among them, D max is the maximum pattern edge displacement, H 0 is the height of the oxide layer before grinding, H min is the minimum height of the metal layer, θ min is the minimum angle.

[0027] Optionally, in the hotspot inspection method after chemical mechanical polishing, after determining the potential hotspot, the method further comprises:

[0028] Determining the metal layer height corresponding to the potential hot spot according to the metal layer height at each position;

[0029] Determining the pattern line width and pattern spacing corresponding to the potential hotspot according to the pre-grinding contour diagram;

[0030] Determine the simulation angle using the angle-line width-spacing function according to the pattern line width and pattern spacing corresponding to the potential hotspot;

[0031] Determining a simulated edge displacement according to the height of the oxide layer before grinding, the height of the metal layer corresponding to the potential hot spot, and the simulated angle;

[0032] Whether the potential hotspot is a real hotspot is determined according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot.

[0033] Optionally, in the hotspot inspection method after chemical mechanical polishing, judging whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-polishing contour image and the position information of the potential hotspot includes:

[0034] According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern to obtain the hot spot pattern line width;

[0035] Determine whether the hot spot line width is less than a preset disconnection threshold;

[0036] When the hotspot line width is less than the disconnection threshold, determining the corresponding potential hotspot as a real hotspot;

[0037] and / or

[0038] The determining whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot comprises:

[0039] According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain a hot spot pattern spacing;

[0040] Determining whether the hotspot distance is less than a preset short-circuit threshold;

[0041] When the hotspot distance is smaller than the short-circuit threshold, the corresponding potential hotspot is determined to be a real hotspot.

[0042] Optionally, in the hotspot inspection method after chemical mechanical polishing, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hotspot on the contour image before polishing is moved toward the inside of the pattern according to the simulated edge displacement to obtain the hotspot pattern line width, which includes:

[0043] According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern, and then according to the preset horizontal thickness of the barrier layer, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern line width;

[0044] Accordingly, according to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern spacing, which includes:

[0045] According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hotspot on the contour map before grinding is moved toward the outside of the pattern, and then according to the preset horizontal thickness of the blocking layer, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hotspot on the contour map before grinding is moved toward the outside of the pattern to obtain the hotspot pattern spacing.

[0046] Optionally, in the hotspot inspection method after chemical mechanical polishing, determining the simulated edge displacement according to the oxide layer height before polishing, the metal layer height corresponding to the potential hotspot and the simulated angle comprises:

[0047] The simulated edge displacement is determined by the following formula:

[0048] D p =(H 0 -H p ) / tan(θ p );

[0049] Among them, D p is the simulated edge displacement, H 0 is the height of the oxide layer before grinding, H p is the height of the metal layer corresponding to the potential hot spot, θ p is the simulation angle.

[0050] A hot spot inspection device after chemical mechanical polishing, comprising:

[0051] A minimum angle module is used to determine the corresponding minimum angle according to the pattern line width and pattern spacing of the mask to be detected, using a pre-stored angle-line width-spacing function;

[0052] A grinding simulation module, used to simulate the mask pattern to be detected by using a chemical mechanical grinding model, and obtain the metal layer height at each position of the mask pattern to be detected;

[0053] A minimum height module, used to determine the corresponding minimum height of the metal layer according to the height of the metal layer at each position of the mask layout to be detected;

[0054] A maximum height difference module, used to determine the maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer;

[0055] An edge displacement module, used to determine a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle;

[0056] A photolithography and etching module is used to simulate the mask pattern to be inspected by using a photolithography model and an etching model to obtain a pre-grinding contour map;

[0057] The potential hotspot module is used to determine the potential hotspot according to the maximum pattern edge displacement and the pre-grinding contour map.

[0058] A hot spot inspection device after chemical mechanical polishing, comprising:

[0059] Memory for storing computer programs;

[0060] A processor is used to implement the steps of any of the above-mentioned methods for detecting hot spots after chemical mechanical polishing when executing the computer program.

[0061] A computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the hot spot inspection method after chemical mechanical polishing as described in any one of the above are implemented.

[0062] The hotspot inspection method after chemical mechanical polishing provided by the present invention determines the corresponding minimum angle by using a pre-stored angle-line width-spacing function according to the pattern line width and pattern spacing of the mask layout to be detected; uses a chemical mechanical polishing model to simulate the mask layout to be detected to obtain the metal layer height at each position of the mask layout to be detected; determines the corresponding minimum height of the metal layer according to the metal layer height at each position of the mask layout to be detected; determines the maximum grinding height difference according to the oxide layer height before grinding and the minimum height of the metal layer; determines the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; uses a photolithography model and an etching model to simulate the mask layout to be detected to obtain a contour map before grinding; and determines potential hotspots according to the maximum pattern edge displacement and the contour map before grinding.

[0063] The present invention fully considers the influence of different chip heights and sidewall angles on the plane profile, and makes up for the lack of contour prediction after chemical mechanical polishing in the existing hotspot prediction model while taking into account low computing power occupation and high processing efficiency. It quickly determines the potential hotspots corresponding to the mask layout to be detected, and facilitates subsequent layout adjustment and process adjustment, thereby greatly improving the comprehensiveness and accuracy of hotspot prediction in the chip production process and improving the finished product yield of the chip. The present invention also provides a hotspot inspection device, equipment and medium after chemical mechanical polishing with the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0065] FIG1 is a schematic flow chart of a specific embodiment of a hot spot inspection method after chemical mechanical polishing provided by the present invention;

[0066] FIG2 is a process structure diagram of a specific embodiment of a hot spot inspection method after chemical mechanical polishing provided by the present invention;

[0067] FIG3 is a process structure diagram of another specific embodiment of the hot spot inspection method after chemical mechanical polishing provided by the present invention;

[0068] FIG4 is a schematic flow chart of another specific embodiment of the hot spot inspection method after chemical mechanical polishing provided by the present invention;

[0069] FIG5 is a schematic structural diagram of a specific embodiment of a hotspot inspection device after chemical mechanical polishing provided by the present invention.

[0070] In the figure, it includes 01-metal layer, 02-oxide layer, 03-barrier layer, 100-minimum angle module, 200-grinding simulation module, 300-minimum height module, 400-maximum height difference module, 500-edge displacement module, 600-photolithography etching module, and 700-potential hotspot module. DETAILED DESCRIPTION

[0071] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0072] The core of the present invention is to provide a method for inspecting hot spots after chemical mechanical polishing, a flow chart of a specific implementation method thereof is shown in FIG1 , which is referred to as specific implementation method 1, and includes:

[0073] S101: According to the pattern line width and pattern spacing of the mask pattern to be detected, a corresponding minimum angle is determined using a pre-stored angle-line width-spacing function.

[0074] The mask pattern to be detected is composed of an insulating oxide layer 02 and a conductive metal layer 01. The pattern mentioned here refers to the pattern formed by the metal layer 01, and the oxide layer 02 between adjacent metal patterns is also the pattern spacing. At the same time, the present invention assumes that the chip is placed horizontally. Therefore, the thickness direction of the chip is the vertical direction, that is, the height direction, and the in-plane direction of the chip is the horizontal direction.

[0075] The angle mentioned in the present invention is the angle between the contact interface of the oxide layer 02 and the metal layer 01 and the horizontal direction, and is always an angle less than or equal to 90, that is, the angle in the present invention is always a non-obtuse angle.

[0076] The angle-line width-spacing function can be obtained by measuring and sampling existing wafers in the early stage to obtain a data set of angles and corresponding line widths and spacings, and then fitting the data set to obtain a relationship, such as measuring the sidewall angles corresponding to various combinations of line widths and spacings through cross-sectional scanning electron microscopy images of graphics with different line widths and spacings, and then obtaining the relationship function described by formula (1) through polynomial fitting:

[0077] θ=f(L,S); (1)

[0078] Wherein, θ is the side wall angle, L is the line width, and S is the spacing.

[0079] S102: using a chemical mechanical polishing model, simulating the mask pattern to be inspected to obtain the height of the metal layer at each position of the mask pattern to be inspected.

[0080] You can first define a simulation unit (such as a rectangular area with a side length of 20 microns), use the chemical mechanical polishing model to simulate the mask layout to be tested one by one, and obtain the height H of the oxide layer 02 and the metal layer 01 of each simulation unit. F (m,n) and H T (m,n), where m and n represent the counts of simulation units in the X and Y directions, respectively. Assume that the surface height after oxide deposition and etching (corresponding to the height of the oxide layer 02 before grinding below) is H relative to the reference plane. 0 Of course, each height in the present invention should correspond to the same reference plane. Thus, for the metal layer 01 area, the height of the chip will be reduced by H after chemical mechanical polishing. 0 -H T (m,n); for oxide regions, the height will be reduced by H 0 -H F (m,n).

[0081] S103: Determine the corresponding minimum height of the metal layer according to the height of the metal layer at each position of the mask pattern to be detected.

[0082] The minimum height of the metal layer 01 is the minimum value of the height of the metal layer 01 at each position of the mask pattern to be detected, and represents the place where the height is worn away the most by chemical mechanical polishing.

[0083] S104: determining a maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer.

[0084] The height of the oxide layer 02 before grinding corresponds to the height of the metal layer 01 before grinding. The oxide height before grinding can refer to Figure 2. Figure 2 is a schematic diagram of the cross-section of the chip when the oxide layer 02 is photoetched to obtain a structured oxide layer 02, but the metal layer 01 has not yet been set. On the basis of Figure 2, a barrier layer 03 is further covered on the outside of the oxide layer 02, and the metal layer 01 is laid on the entire surface and the cross-section of the chip after grinding is shown in Figure 3.

[0085] S105: Determine a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle.

[0086] If the descending height of the metal layer 01 and the angle of the contact slope between the metal layer 01 and the oxide layer 02 are known, the change distance of the metal layer 01 in the horizontal direction can naturally be calculated using the tangent value of the angle. The present invention focuses on quickly troubleshooting potential hot spot defects. Therefore, in this step, the minimum angle, that is, the angle with the largest pattern edge displacement, is directly used to inspect each position in the figure. The displacement of the pattern edge obtained under the conditions of the maximum grinding height difference and the minimum angle is the maximum pattern edge displacement of the mask to be tested.

[0087] S106: simulating the mask pattern to be inspected by using a photolithography model and an etching model to obtain a pre-grinding contour map.

[0088] The pre-grinding contour map obtained in this step is a contour map of the contact interface between the oxide layer 02 and the metal layer 01 on the top surface before the start of chemical mechanical polishing. As the grinding starts, the height of the metal layer 01 decreases, and the contour map of the contact interface on the top surface will also change, generating hot spots.

[0089] S107: Determine potential hot spots according to the maximum pattern edge displacement and the pre-grinding contour map.

[0090] Continuing from the previous text, in step S106, a contour map of the contact interface between the oxide layer 02 and the metal layer 01 on the top surface before the start of chemical mechanical polishing is obtained. This step only requires adjusting the contour in the contour map before polishing along the normal direction by a length of the maximum pattern edge displacement to simulate the situation where the contour changes the most during polishing. In this case, the hot spot detected is a possible hot spot, that is, the potential hot spot.

[0091] Of course, in this step, the specific method for determining the potential hotspots includes:

[0092] A1: According to the maximum pattern edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at each position on the pre-grinding contour map is moved toward the inside of the pattern to obtain an inward predicted contour map.

[0093] The movement toward the inside of the pattern means that the metal layer 01 is retracted into the corresponding area on the contour diagram before grinding (moving inward along the normal direction with a maximum pattern edge displacement). At this time, the cross-section of the corresponding oxide layer 02 is a trapezoid, and the cross-section of the metal layer 01 is an inverted trapezoid. The further the metal layer 01 is ground downward, the smaller the line width of the metal layer 01 is.

[0094] It should be noted that the boundary patterns on both sides need to be moved inward, and the line width of the pattern in the inward prediction contour map is twice less than the line width of the pattern on the contour map before grinding by the distance corresponding to the maximum pattern edge displacement.

[0095] A2: Traverse each position on the inward prediction contour map to determine whether there is a point where the corresponding pattern line width is smaller than a preset disconnection threshold.

[0096] As mentioned above, the simulation units may be checked one by one to see whether there is a simulation unit whose pattern line width (ie, the exposed surface of the metal layer 01 ) is smaller than a preset disconnection threshold.

[0097] A3: When there is a point on the inward prediction contour map whose corresponding pattern line width is smaller than the disconnection threshold, the point whose corresponding pattern line width is smaller than the disconnection threshold is taken as the potential hotspot.

[0098] If the line width of the metal layer 01 is too small, poor connection or disconnection of the metal layer 01 may occur in subsequent actual production. In this case, the position can be confirmed as a potential hot spot.

[0099] and / or

[0100] Determining potential hot spots according to the maximum pattern edge displacement and the pre-grinding profile diagram includes:

[0101] B1: According to the maximum pattern edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at each position on the pre-grinding contour map is moved toward the outside of the pattern to obtain an outward expansion prediction contour map.

[0102] B2: Traverse each position on the outward expansion prediction contour map to determine whether there is a point where the corresponding pattern spacing is less than a preset short-circuit threshold.

[0103] B3: When there are points on the outward expansion prediction contour map whose corresponding pattern spacing is smaller than the short-circuit threshold, the points whose corresponding pattern line width is smaller than the short-circuit threshold are taken as the potential hot spots.

[0104] Steps B1 to B3 can refer to steps A1 to A3 in the previous text, the difference is that the corresponding situation this time is that the cross-section of the metal layer 01 is a trapezoid, and the cross-section of the oxide layer 02 is an inverted trapezoid, that is, the further down the grinding, the larger the pattern line width. Therefore, in step B1, it is necessary to move both sides of the contour in the pre-grinding contour image outward by a distance corresponding to the maximum pattern edge displacement. At the same time, since the pattern of the metal layer 01 becomes wider, it is necessary to consider the contact short circuit between adjacent patterns caused by the narrowing of the oxide layer 02 due to the widening of the metal layer 01, which is specifically achieved by comparing with the short circuit threshold.

[0105] Taking into account that there are two different inclination directions at the contact interface between the oxide layer 02 and the metal layer 01, and the different inclination directions may result in an increase in the pattern line width or the pattern spacing as the height of the metal layer 01 decreases, the present preferred embodiment handles the two situations separately, thereby avoiding missing potential hotspots in some cases and improving the detection accuracy.

[0106] Further, determining the maximum grinding height difference according to the height of the oxide layer 02 before grinding and the minimum height of the metal layer 01; and determining the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle comprises:

[0107] According to the height of the oxide layer 02 before grinding, the minimum height of the metal layer 01 and the minimum angle, the maximum pattern edge displacement is determined by the following formula (2):

[0108] D max =(H 0 -H min ) / tan(θ min ); (2)

[0109] Among them, D max is the maximum pattern edge displacement, H 0 is the height of the oxide layer 02 before grinding, H min is the minimum height of the metal layer 01, θ min is the minimum angle.

[0110] That is H 0 -H min is the maximum grinding height difference, that is, the height direction change corresponding to the minimum angle, and the corresponding maximum pattern edge displacement is the horizontal direction change corresponding to the minimum angle. The above formula (2) can be used to quickly and conveniently calculate the maximum pattern edge displacement with low computing power.

[0111] The hotspot inspection method after chemical mechanical polishing provided by the present invention determines the corresponding minimum angle by using a pre-stored angle-line width-spacing function according to the pattern line width and pattern spacing of the mask layout to be detected; uses a chemical mechanical polishing model to simulate the mask layout to be detected to obtain the height of the metal layer 01 at each position of the mask layout to be detected; determines the corresponding minimum height of the metal layer 01 according to the height of the metal layer 01 at each position of the mask layout to be detected; determines the maximum polishing height difference according to the height of the oxide layer 02 before polishing and the minimum height of the metal layer 01; determines the maximum pattern edge displacement according to the maximum polishing height difference and the minimum angle; uses a photolithography model and an etching model to simulate the mask layout to be detected to obtain a contour map before polishing; and determines potential hotspots according to the maximum pattern edge displacement and the contour map before polishing. The present invention fully considers the influence of different chip heights and sidewall angles on the plane contour. Under the premise of taking into account low computing power occupancy and high processing efficiency, it makes up for the lack of contour prediction after chemical mechanical polishing in the existing hotspot prediction model, and quickly determines the potential hotspots corresponding to the mask layout to be tested, which facilitates subsequent layout adjustment and process adjustment, thereby greatly improving the comprehensiveness and accuracy of hotspot prediction in the chip production process and improving the chip finished product yield.

[0112] On the basis of the first specific implementation, the potential hotspot is further confirmed to determine whether it is a real hotspot, and a second specific implementation is obtained. The corresponding flow chart is shown in FIG4 , including:

[0113] S201: According to the pattern line width and pattern spacing of the mask to be inspected, a corresponding minimum angle is determined using a pre-stored angle-line width-spacing function.

[0114] S202: using a chemical mechanical polishing model, simulating the mask pattern to be inspected to obtain the height of the metal layer at each position of the mask pattern to be inspected.

[0115] S203: Determine the corresponding minimum height of the metal layer according to the height of the metal layer at each position of the mask pattern to be detected.

[0116] S204: determining a maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer.

[0117] S205: Determine a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle.

[0118] S206: simulating the mask pattern to be inspected by using the photolithography model and the etching model to obtain a pre-grinding contour map.

[0119] S207: Determine potential hot spots according to the maximum pattern edge displacement and the pre-grinding contour map.

[0120] S208: Determine the metal layer height corresponding to the potential hot spot according to the metal layer heights at the various positions.

[0121] In step S202, the simulation of the mask pattern to be tested has been completed through the chemical mechanical polishing model, and the height of the metal layer 01 at each position on the mask pattern to be tested after polishing is obtained. In step S207, the position of the potential hotspot is also known, so the height of the metal layer 01 at the position corresponding to the potential hotspot in the simulated polishing can be known.

[0122] S209: Determine the pattern line width and pattern spacing corresponding to the potential hotspot according to the pre-grinding contour image.

[0123] In step S206, the pre-grinding contour image is obtained, and the pattern line width and pattern spacing at the potential hotspot position are determined according to the position of the potential hotspot.

[0124] S210: Determine a simulation angle using the angle-line width-spacing function according to the pattern line width and pattern spacing corresponding to the potential hotspot.

[0125] In this step, the angle corresponding to the simulation result of the potential hot spot position is determined.

[0126] S211: Determine a simulated edge displacement according to the height of the oxide layer before grinding, the height of the metal layer corresponding to the potential hot spot, and the simulated angle.

[0127] The simulated edge displacement is the edge displacement derived from the two simulation results, which is closer to the actual morphology of the potential hot spot position after chemical mechanical polishing.

[0128] S212: judging whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot.

[0129] Through the simulated edge displacement, the pre-grinding contour map and the position information of the potential hotspot, the pattern line width and pattern spacing at the potential hotspot that are close to the actual situation can be obtained. The pattern line width and pattern spacing can be calculated based on the simulation results to determine whether the potential hotspot is really a hotspot under simulation conditions (that is, whether it is a real hotspot).

[0130] The difference between this specific implementation and the above specific implementation is that, based on the potential hotspot, this specific implementation further determines whether the potential hotspot is a real hotspot. The remaining steps are the same as the above specific implementation and will not be elaborated here.

[0131] As a preferred implementation manner, judging whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot includes:

[0132] C1: According to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern to obtain the hot spot pattern line width.

[0133] C2: Determine whether the hot spot line width is smaller than a preset disconnection threshold.

[0134] C3: When the hotspot line width is smaller than the disconnection threshold, the corresponding potential hotspot is determined to be a real hotspot.

[0135] and / or

[0136] The determining whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot comprises:

[0137] D1: According to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern spacing.

[0138] D2: Determine whether the hot spot distance is less than a preset short circuit threshold.

[0139] D3: When the hotspot distance is less than the short-circuit threshold, the corresponding potential hotspot is determined to be a real hotspot.

[0140] With reference to the foregoing, the boundaries of the metal layer 01 and the oxide layer 02 are moved to the inside and the outside of the pattern respectively according to the simulated edge displacement, and then the open circuit threshold and the short circuit threshold are compared respectively to determine whether the position of the potential hot spot does not really meet the above two thresholds, and is the real hot spot. The present invention will not be described one by one here.

[0141] Further, according to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern, and the hot spot pattern line width is obtained, including:

[0142] According to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern, and then according to the preset horizontal thickness of the barrier layer 03, the boundary between the metal layer 01 and the oxide layer 02 at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern line width;

[0143] Accordingly, according to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern, and the hot spot pattern spacing is obtained, including:

[0144] According to the simulated edge displacement, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hotspot on the contour map before grinding is moved toward the outside of the pattern, and then according to the preset horizontal thickness of the barrier layer 03, the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hotspot on the contour map before grinding is moved toward the outside of the pattern to obtain the hotspot pattern spacing.

[0145] That is, in the preferred embodiment, the boundary of the metal layer 01 and the oxide layer 02 at the corresponding position on the contour diagram before grinding is displaced toward the inside or outside of the pattern according to the simulated edge displacement, and is also moved toward the outside of the pattern by the horizontal thickness of the barrier layer 03. Please refer to Figure 3. Sometimes a barrier layer 03 is included between the metal layer 01 and the oxide layer 02. The barrier layer 03 does not belong to the pattern on the chip, so its width can be classified into the oxide layer 02. This specific embodiment takes into account the thickness of the barrier layer 03 in the horizontal direction, so that the hotspot result is closer to the actual situation.

[0146] Furthermore, the determining of the simulated edge displacement according to the height of the oxide layer 02 before grinding, the height of the metal layer 01 corresponding to the potential hot spot and the simulated angle includes:

[0147] The simulated edge displacement is determined by the following formula (3):

[0148] D p =(H 0 -H p ) / tan(θ p ); (3)

[0149] Among them, D p is the simulated edge displacement, H 0 is the height of the oxide layer 02 before grinding, H p is the height of the metal layer 01 corresponding to the potential hot spot, θ p is the simulation angle.

[0150] This formula (3) refers to the formula (2) in the previous text, and can quickly and conveniently complete the calculation of the simulated edge displacement with low computing power. Of course, other methods can also be used to calculate the simulated edge displacement, and the present invention is not limited here.

[0151] The hotspot inspection device after chemical mechanical polishing provided by an embodiment of the present invention is introduced below. The hotspot inspection device after chemical mechanical polishing described below and the hotspot inspection method after chemical mechanical polishing described above can be referenced to each other.

[0152] FIG. 5 is a block diagram of a hot spot inspection device after chemical mechanical polishing according to an embodiment of the present invention. Referring to FIG. 5 , the hot spot inspection device after chemical mechanical polishing may include:

[0153] The minimum angle module 100 is used to determine the corresponding minimum angle according to the pattern line width and pattern spacing of the mask layout to be detected by using the pre-stored angle-line width-spacing function;

[0154] The grinding simulation module 200 is used to simulate the mask pattern to be tested by using a chemical mechanical grinding model to obtain the height of the metal layer 01 at each position of the mask pattern to be tested;

[0155] The minimum height module 300 is used to determine the corresponding minimum height of the metal layer 01 according to the height of the metal layer 01 at each position of the mask layout to be detected;

[0156] A maximum height difference module 400 is used to determine a maximum grinding height difference according to the height of the oxide layer 02 before grinding and the minimum height of the metal layer 01;

[0157] An edge displacement module 500, for determining a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle;

[0158] The photolithography and etching module 600 is used to simulate the mask pattern to be inspected by using the photolithography model and the etching model to obtain a pre-grinding contour map;

[0159] The potential hotspot module 700 is used to determine the potential hotspot according to the maximum pattern edge displacement and the pre-grinding profile.

[0160] As a preferred implementation, the potential hotspot module 700 includes:

[0161] An inward unit, for moving the boundary between the metal layer 01 and the oxide layer 02 at each position on the pre-grinding contour map toward the inside of the pattern according to the maximum pattern edge displacement, to obtain an inward predicted contour map;

[0162] A disconnection judgment unit, used to traverse each position on the inward prediction contour map to determine whether there is a point where the corresponding pattern line width is less than a preset disconnection threshold;

[0163] A disconnection hotspot unit, for taking the point whose corresponding pattern line width is smaller than the disconnection threshold as the potential hotspot when there is a point whose corresponding pattern line width is smaller than the disconnection threshold on the inward prediction contour map;

[0164] and / or

[0165] The potential hotspot module 700 includes:

[0166] An outward expansion unit, used for moving the boundary of the metal layer 01 and the oxide layer 02 at each position on the pre-grinding contour map toward the outside of the pattern according to the maximum pattern edge displacement, to obtain an outward expansion prediction contour map;

[0167] A short circuit judgment unit, used to traverse each position on the outward expansion prediction contour map to determine whether there is a point where the corresponding pattern spacing is less than a preset short circuit threshold;

[0168] The short-circuit hotspot unit is used to take the point whose corresponding pattern line width is less than the short-circuit threshold as the potential hotspot when there is a point whose corresponding pattern spacing is less than the short-circuit threshold on the outward expansion prediction contour map.

[0169] As a preferred implementation, the maximum height difference module 400 and the edge displacement module 500 include:

[0170] The height difference-edge displacement formula unit is used to determine the maximum pattern edge displacement according to the height of the oxide layer 02 before grinding, the minimum height of the metal layer 01 and the minimum angle by the following formula:

[0171] D max =(H 0 -H min ) / tan(θ min );

[0172] Among them, D max is the maximum pattern edge displacement, H 0 is the height of the oxide layer 02 before grinding, H min is the minimum height of the metal layer 01, θ min is the minimum angle.

[0173] As a preferred implementation, the potential hotspot module 700 further includes:

[0174] A potential point layer height unit, used to determine the height of the metal layer 01 corresponding to the potential hot spot according to the height of the metal layer 01 at each position;

[0175] A potential point line width spacing unit is used to determine the pattern line width and pattern spacing corresponding to the potential hot spot according to the pre-grinding contour map;

[0176] A potential point angle unit, used to determine the simulation angle using the angle-line width-spacing function according to the pattern line width and pattern spacing corresponding to the potential hotspot;

[0177] A potential point edge displacement unit, used to determine the simulated edge displacement according to the height of the oxide layer 02 before grinding, the height of the metal layer 01 corresponding to the potential hot spot and the simulated angle;

[0178] The hot spot judgment unit is used to judge whether the potential hot spot is a real hot spot according to the simulated edge displacement, the pre-grinding contour map and the position information of the potential hot spot.

[0179] As a preferred implementation, the potential hotspot module 700 includes:

[0180] A hotspot line width unit is used to move the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hotspot on the pre-grinding contour image toward the inside of the pattern according to the simulated edge displacement, so as to obtain the hotspot pattern line width;

[0181] A line width judgment unit, used to judge whether the hot spot line width is less than a preset disconnection threshold;

[0182] A line width hotspot determination unit, configured to determine that the corresponding potential hotspot is a real hotspot when the hotspot line width is less than the disconnection threshold;

[0183] and / or

[0184] A hotspot spacing unit is used to move the boundary between the metal layer 01 and the oxide layer 02 at the corresponding position of the potential hotspot on the pre-grinding contour map toward the outside of the pattern according to the simulated edge displacement, so as to obtain a hotspot pattern spacing;

[0185] A spacing judgment unit, used to judge whether the hot spot spacing is less than a preset short circuit threshold;

[0186] The spacing hotspot determining unit is used to determine that the corresponding potential hotspot is a real hotspot when the hotspot spacing is less than the short-circuit threshold.

[0187] As a preferred implementation, the potential hotspot module 700 includes:

[0188] The simulated edge displacement formula unit is used to determine the simulated edge displacement by the following formula:

[0189] D p =(H 0 -H p ) / tan(θ p );

[0190] Among them, D pis the simulated edge displacement, H 0 is the height of the oxide layer 02 before grinding, H p is the height of the metal layer 01 corresponding to the potential hot spot, θ p is the simulation angle.

[0191] The hot spot inspection device after chemical mechanical polishing provided by the present invention is used to determine the corresponding minimum angle according to the pattern line width and pattern spacing of the mask layout to be detected by using a pre-stored angle-line width-spacing function through a minimum angle module 100; the polishing simulation module 200 is used to simulate the mask layout to be detected by using a chemical mechanical polishing model to obtain the height of the metal layer 01 at each position of the mask layout to be detected; the minimum height module 300 is used to determine the corresponding metal layer 01 according to the height of the metal layer 01 at each position of the mask layout to be detected. The minimum height of the metal layer 01; the maximum height difference module 400 is used to determine the maximum grinding height difference according to the height of the oxide layer 02 before grinding and the minimum height of the metal layer 01; the edge displacement module 500 is used to determine the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; the photolithography and etching module 600 is used to simulate the mask layout to be detected using the photolithography model and the etching model to obtain the contour map before grinding; the potential hotspot module 700 is used to determine the potential hotspot according to the maximum pattern edge displacement and the contour map before grinding. The present invention fully considers the influence of different chip heights and sidewall angles on the plane contour, and on the premise of taking into account low computing power occupancy and high processing efficiency, makes up for the lack of contour prediction after chemical mechanical grinding in the existing hotspot prediction model, quickly determines the potential hotspot corresponding to the mask layout to be detected, and facilitates the subsequent layout adjustment and process adjustment, thereby greatly improving the comprehensiveness and accuracy of hotspot prediction in the chip production process and improving the finished product yield of the chip.

[0192] The hotspot inspection device after chemical mechanical polishing of this embodiment is used to implement the aforementioned hotspot inspection method after chemical mechanical polishing. Therefore, the specific implementation method of the hotspot inspection device after chemical mechanical polishing can be seen in the implementation method part of the hotspot inspection method after chemical mechanical polishing in the previous text, for example, the minimum angle module 100, the grinding simulation module 200, the minimum height module 300, the maximum height difference module 400, the edge displacement module 500, the photolithography etching module 600, the potential hotspot module 700, are respectively used to implement steps S101, S102, S103, S104, S105, S106, and S107 in the above-mentioned hotspot inspection method after chemical mechanical polishing. Therefore, its specific implementation method can refer to the description of the corresponding each part of the implementation method, which will not be repeated here.

[0193] The present invention also provides a hot spot inspection device after chemical mechanical polishing, comprising:

[0194] Memory for storing computer programs;

[0195] A processor is used to implement the steps of any of the above-mentioned hot spot inspection methods after chemical mechanical polishing when executing the computer program. The hot spot inspection method after chemical mechanical polishing provided by the present invention determines the corresponding minimum angle by using a pre-stored angle-line width-spacing function according to the pattern line width and pattern spacing of the mask layout to be detected; simulates the mask layout to be detected using a chemical mechanical polishing model to obtain the height of the metal layer 01 at each position of the mask layout to be detected; determines the corresponding minimum height of the metal layer 01 according to the height of the metal layer 01 at each position of the mask layout to be detected; determines the maximum grinding height difference according to the height of the oxide layer 02 before grinding and the minimum height of the metal layer 01; determines the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; simulates the mask layout to be detected using a photolithography model and an etching model to obtain a contour map before grinding; determines potential hot spots according to the maximum pattern edge displacement and the contour map before grinding. The present invention fully considers the influence of different chip heights and sidewall angles on the plane contour. Under the premise of taking into account low computing power occupancy and high processing efficiency, it makes up for the lack of contour prediction after chemical mechanical polishing in the existing hotspot prediction model, and quickly determines the potential hotspots corresponding to the mask layout to be tested, which facilitates subsequent layout adjustment and process adjustment, thereby greatly improving the comprehensiveness and accuracy of hotspot prediction in the chip production process and improving the chip finished product yield.

[0196] The present invention also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the hotspot inspection method after chemical mechanical polishing as described in any one of the above are implemented. The hotspot inspection method after chemical mechanical polishing provided by the present invention determines the corresponding minimum angle by using a pre-stored angle-line width-spacing function according to the pattern line width and pattern spacing of the mask layout to be detected; simulates the mask layout to be detected using a chemical mechanical polishing model to obtain the height of the metal layer 01 at each position of the mask layout to be detected; determines the corresponding minimum height of the metal layer 01 according to the height of the metal layer 01 at each position of the mask layout to be detected; determines the maximum grinding height difference according to the height of the oxide layer 02 before grinding and the minimum height of the metal layer 01; determines the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; simulates the mask layout to be detected using a photolithography model and an etching model to obtain a contour map before grinding; determines potential hotspots according to the maximum pattern edge displacement and the contour map before grinding. The present invention fully considers the influence of different chip heights and sidewall angles on the plane contour. Under the premise of taking into account low computing power occupancy and high processing efficiency, it makes up for the lack of contour prediction after chemical mechanical polishing in the existing hotspot prediction model, and quickly determines the potential hotspots corresponding to the mask layout to be tested, which facilitates subsequent layout adjustment and process adjustment, thereby greatly improving the comprehensiveness and accuracy of hotspot prediction in the chip production process and improving the chip finished product yield.

[0197] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0198] It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0199] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0200] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be implemented directly using hardware, a software module executed by a processor, or a combination of the two. The software module may be placed in a random access memory (RAM), a memory, a read-only memory (ROM), an electrically programmable ROM, an electrically erasable programmable ROM, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0201] The above is a detailed introduction to the hot spot inspection method, device, equipment and medium after chemical mechanical polishing provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, the present invention can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the present invention.

Claims

1. A method for inspecting hot spots after chemical mechanical polishing, characterized in that: include: According to the pattern line width and pattern spacing of the mask to be detected, the corresponding minimum angle is determined using a pre-stored angle-line width-spacing function; Using a chemical mechanical polishing model, the mask pattern to be inspected is simulated to obtain the height of the metal layer at each position of the mask pattern to be inspected; Determine the minimum height of the corresponding metal layer according to the height of the metal layer at each position of the mask pattern to be detected; Determining the maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer; Determining a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; Using a photolithography model and an etching model, the mask pattern to be inspected is simulated to obtain a pre-grinding contour map; Potential hot spots are determined based on the maximum pattern edge displacement and the pre-grinding profile.

2. The hot spot inspection method after chemical mechanical polishing according to claim 1, characterized in that: Determining potential hot spots according to the maximum pattern edge displacement and the pre-grinding profile includes: According to the maximum pattern edge displacement, the boundary between the metal layer and the oxide layer at each position on the pre-grinding contour image is moved toward the inside of the pattern to obtain an inward predicted contour image; Traversing each position on the inward prediction contour map to determine whether there is a point where the corresponding pattern line width is less than a preset disconnection threshold; When there is a point on the inward prediction contour map whose corresponding pattern line width is smaller than the disconnection threshold, the point whose corresponding pattern line width is smaller than the disconnection threshold is taken as the potential hotspot; and / or, Determining potential hot spots according to the maximum pattern edge displacement and the pre-grinding profile diagram includes: According to the maximum pattern edge displacement, the boundary between the metal layer and the oxide layer at each position on the pre-grinding contour image is moved toward the outside of the pattern to obtain an outward expansion prediction contour image; Traversing each position on the outward expansion prediction contour map to determine whether there is a point where the corresponding pattern spacing is less than a preset short-circuit threshold; When there are points on the outward expansion prediction contour map whose corresponding pattern spacing is smaller than the short-circuit threshold, the points whose corresponding pattern line width is smaller than the short-circuit threshold are taken as the potential hot spots.

3. The hot spot inspection method after chemical mechanical polishing according to claim 1, characterized in that: Determining the maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer; Determining the maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle includes: According to the oxide layer height before grinding, the minimum height of the metal layer and the minimum angle, the maximum pattern edge displacement is determined by the following formula: IS max =(H0-H min ) / time(θ min ); Among them, D max is the maximum pattern edge displacement, H0 is the height of the oxide layer before grinding, and H min is the minimum height of the metal layer, θ min is the minimum angle.

4. The hot spot inspection method after chemical mechanical polishing according to claim 1, characterized in that: After determining the potential hot spots, the following steps are also included: Determining the metal layer height corresponding to the potential hot spot according to the metal layer height at each position; Determining the pattern line width and pattern spacing corresponding to the potential hotspot according to the pre-grinding contour diagram; Determine the simulation angle using the angle-line width-spacing function according to the pattern line width and pattern spacing corresponding to the potential hotspot; Determining a simulated edge displacement according to the height of the oxide layer before grinding, the height of the metal layer corresponding to the potential hot spot, and the simulated angle; Whether the potential hotspot is a real hotspot is determined according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot.

5. The hot spot inspection method after chemical mechanical polishing according to claim 4, characterized in that: Judging whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot includes: According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern to obtain the hot spot pattern line width; Determine whether the hot spot line width is less than a preset disconnection threshold; When the hotspot line width is less than the disconnection threshold, determining the corresponding potential hotspot as a real hotspot; and / or, The determining whether the potential hotspot is a real hotspot according to the simulated edge displacement, the pre-grinding contour image and the position information of the potential hotspot comprises: According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain a hot spot pattern spacing; Determining whether the hotspot distance is less than a preset short-circuit threshold; When the hotspot distance is smaller than the short-circuit threshold, the corresponding potential hotspot is determined to be a real hotspot.

6. The hot spot inspection method after chemical mechanical polishing according to claim 5, characterized in that: According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern, and the hot spot pattern line width is obtained, which includes: According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the inside of the pattern, and then according to the preset horizontal thickness of the barrier layer, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern line width; Accordingly, according to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hot spot on the pre-grinding contour image is moved toward the outside of the pattern to obtain the hot spot pattern spacing, which includes: According to the simulated edge displacement, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hotspot on the contour map before grinding is moved toward the outside of the pattern, and then according to the preset horizontal thickness of the blocking layer, the boundary between the metal layer and the oxide layer at the position corresponding to the potential hotspot on the contour map before grinding is moved toward the outside of the pattern to obtain the hotspot pattern spacing.

7. The hot spot inspection method after chemical mechanical polishing according to claim 4, characterized in that: Determining the simulated edge displacement according to the oxide layer height before grinding, the metal layer height corresponding to the potential hot spot, and the simulated angle includes: The simulated edge displacement is determined by the following formula: IS p =(H0-H p ) / time(θ p ); Among them, D p is the simulated edge displacement, H0 is the height of the oxide layer before grinding, and H p is the height of the metal layer corresponding to the potential hot spot, θ p is the simulation angle.

8. A hot spot inspection device after chemical mechanical polishing, characterized in that: include: A minimum angle module is used to determine the corresponding minimum angle according to the pattern line width and pattern spacing of the mask to be detected, using a pre-stored angle-line width-spacing function; A grinding simulation module, used to simulate the mask pattern to be detected by using a chemical mechanical grinding model, and obtain the metal layer height at each position of the mask pattern to be detected; A minimum height module, used to determine the corresponding minimum height of the metal layer according to the height of the metal layer at each position of the mask layout to be detected; A maximum height difference module, used to determine the maximum grinding height difference according to the height of the oxide layer before grinding and the minimum height of the metal layer; An edge displacement module, used to determine a maximum pattern edge displacement according to the maximum grinding height difference and the minimum angle; A photolithography and etching module is used to simulate the mask pattern to be inspected by using a photolithography model and an etching model to obtain a pre-grinding contour map; The potential hotspot module is used to determine the potential hotspot according to the maximum pattern edge displacement and the pre-grinding contour map.

9. A hot spot inspection device after chemical mechanical polishing, characterized in that: include: Memory for storing computer programs; A processor is used to implement the steps of the hot spot inspection method after chemical mechanical polishing as described in any one of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the hot spot inspection method after chemical mechanical polishing according to any one of claims 1 to 7 are implemented.

Images