Test device and test method for testing dynamic response of current sensor chip

Abstract

A test device and test method for testing the dynamic response of a current sensor chip, wherein the test device is provided with a load module respectively connected to an ATE test device, a capacitor module and a current sensor chip to be tested; a switch module controls the current to be turned on or off; the ATE test device outputs a high-voltage signal to the load module and the switch module, outputs a constant voltage signal to the current sensor chip to be tested, and drives the switch module according to a preset timing signal; the capacitor module is connected to the ATE test device, the load module and the switch module as an energy storage capacitor; and a sampling module collects the current waveform and the first voltage waveform of the current sensor chip to be tested, and collects the second voltage waveform of the switch module. The present invention has the advantages of short test time and high test accuracy when testing the dynamic response of the current sensor chip, and the test parameters are adjustable.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical performance testing, and in particular to a testing device and a testing method for testing the dynamic response of a current sensor chip. Background Art

[0002] The core function of the current sensor chip is to detect the information of the measured current and convert this information into electrical signals or other forms of information that meet the standard requirements according to certain rules. This conversion enables the current sensor chip to be widely used in energy management, fault detection, safety monitoring and other fields.

[0003] The dynamic response time test of the current sensor chip is an extremely important item in the chip application test. The speed of the dynamic response time has a profound impact on the stability and reliability of the test equipment. When the response speed is slow, the chip has not yet responded, and the equipment has already failed due to abnormal current. On the contrary, when the response is fast, the chip can sense the change in current in time and feed back to the equipment, reducing the incidence of equipment failure. It can be seen that the dynamic response time test occupies a vital part in the overall performance evaluation of the current sensor chip, and plays a decisive role in whether the chip can be successfully applied in the future.

[0004] At present, the current sensor chip test uses a di / dt, dv / dt comprehensive parameter test bench to test the dynamic response time of the current sensor chip, but it has the following disadvantages: the debugging time is too long, and the numerical values ​​of various parameters need to be continuously adjusted in the editing page to obtain a pulse current that meets the conditions; the output current form is relatively simple, with only a single pulse current form; the test bench directly outputs the response time value, and it is impossible to determine whether the test result is obtained according to the dynamic response time test requirements, resulting in insufficient accuracy; there is a lot of noise and clutter interference, etc.

[0005] Therefore, in view of the shortcomings of the prior art, it is necessary to provide a testing device and a testing method for testing the dynamic response of a current sensor chip to solve the shortcomings of the prior art. Summary of the invention

[0006] The first object of the present invention is to avoid the shortcomings of the prior art and provide a test device for testing the dynamic response of a current sensor chip. The test device for testing the dynamic response of a current sensor chip has the advantages of short test time and high test accuracy during the dynamic response test of the current sensor chip, and the test parameters are adjustable.

[0007] The above-mentioned purpose of the present invention is achieved by the following technical measures:

[0008] A test device for testing the dynamic response of a current sensor chip is provided, comprising:

[0009] Load module: connected to ATE test equipment, capacitor module and current sensor chip to be tested respectively;

[0010] Switch module - controls the current to be turned on or off;

[0011] ATE test equipment - outputs high voltage signals to the load module and the switch module, outputs constant voltage signals to the current sensor chip to be tested, and drives the switch module according to a preset timing signal;

[0012] Capacitor module - serving as an energy storage capacitor, connected to the ATE test equipment, the load module and the switch module;

[0013] Sampling module - collects the current waveform and the first voltage waveform of the current sensor chip to be tested, and collects the second voltage waveform of the switch module.

[0014] Preferably, the above ATE test equipment is provided with:

[0015] High voltage source control port—provides high voltage signals to the load module and the switch module;

[0016] Signal source control port: provides a constant voltage signal to the current sensor chip to be tested;

[0017] Driving port—driving the switch module according to the preset timing signal.

[0018] Preferably, the number of pulses of the above-mentioned preset timing signal is greater than or equal to 2.

[0019] Preferably, the sampling module is an oscilloscope.

[0020] Each pulse is divided into four moments, which are defined as t0, t1, t2 and t3 from front to back, respectively, where t0 is the starting point of each pulse and t3 is the end point of each pulse.

[0021] When the high voltage source control port outputs a positive high constant voltage signal:

[0022] At t0, the signal source control port outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip to be measured, and the VOUT output terminal of the current sensor chip to be measured responds by outputting a constant voltage signal;

[0023] At t1, the high voltage source control port outputs a positive high constant voltage signal, and the sampling module collects the second voltage waveform of the switch module;

[0024] At t2, the on-level rising edge comes, so that the on-level rising edge of the gate voltage VGS of the switch module comes, the switch module is turned on, the second voltage waveform of the switch module is pulled down, and the current waveform of the switch module is established. The current sensor chip to be measured detects the current waveform and outputs the first voltage waveform, and the sampling module simultaneously collects the current waveform and the first voltage waveform;

[0025] At t3, the switch module is turned off;

[0026] When the high voltage source control port outputs a reverse high constant voltage signal:

[0027] At t0, the signal source control port outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip to be measured, and the VOUT output terminal of the current sensor chip to be measured responds by outputting a constant voltage signal;

[0028] At t1, the high voltage source control port outputs a reverse high constant voltage signal, and the sampling module collects the second voltage waveform of the switch module;

[0029] At t2, the on-level rising edge comes, so that the on-level rising edge of the gate voltage VGS of the switch module comes, the switch module is turned on, the second voltage waveform of the switch module is pulled up, and the current waveform of the switch module is established. The current sensor chip to be measured detects the current waveform and outputs the first voltage waveform, and the sampling module simultaneously collects the current waveform and the first voltage waveform;

[0030] At t3, the switch module is turned off.

[0031] Pin 1 of the current sensing chip to be measured is connected to one end of the load module, pin 5 of the current sensing chip to be measured is connected to the switch module, pin 12 of the current sensing chip to be measured is connected to the sampling module, pin 10 of the current sensing chip to be measured is respectively connected to the FOVI0_FH terminal and the FOVI0_SH terminal of the signal source control port, and pin 15 of the current sensing chip to be measured is respectively connected to the FOVI3_FH terminal and the FOVI3_SH terminal of the signal source control port.

[0032] Pin 10 of the current sensor chip to be tested serves as the VCC power supply terminal.

[0033] Pin 12 of the current sensing chip to be measured serves as the VOUT output terminal.

[0034] Preferably, the capacitor module is provided with a coupling capacitor C1, a coupling capacitor C2 and a coupling capacitor C3, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are all connected to the FPVI0_FH end of the high-voltage source control port, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are also connected to the FPVI0_SH end of the high-voltage source control port, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are all connected to the other end of the load module, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are all connected to the FPVI1_FL end of the high-voltage source control port, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are all connected to the FPVI1_SL end of the high-voltage source control port, and the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are also grounded.

[0035] Preferably, the load module is provided with a resistor R1, one end of which is connected to pin 1 of the current sensing chip to be measured, and the other end of which is connected to the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3.

[0036] Preferably, the driving port is a DIO interface, pins 1, 2, 3 and 4 of the DIO interface are all grounded, and pin 0 of the DIO interface is connected to the sampling module.

[0037] Preferably, the switch module is provided with a semiconductor power device Q1, the G end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, the C end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, and the E end of the semiconductor power device Q1 is grounded.

[0038] Preferably, the semiconductor power device Q1 is an insulated gate bipolar transistor IGBT or a silicon carbide semiconductor field effect transistor SIC MOSFET.

[0039] The test device for testing the dynamic response of a current sensor chip of the present invention is further provided with a peripheral circuit, wherein the peripheral circuit is provided with a resistor R2, a resistor R3, a capacitor C4, a capacitor C5 and a capacitor C6, the resistor R2 is arranged between the 15th pin of the current sensor chip to be tested and the FOVI3_FH end of the signal source control port, one end of the resistor R3 is connected to the sampling module, the other end of the resistor R3 is connected in series with the capacitor C5 to be grounded, and the 12th pin of the current sensor chip to be tested is also connected in series with the capacitor C4 to be grounded.

[0040] The second object of the present invention is to avoid the shortcomings of the prior art and provide a method for testing the dynamic response of a current sensor chip. The method for testing the dynamic response of a current sensor chip has the advantages of short testing time and high testing accuracy, and the testing parameters are adjustable.

[0041] The above-mentioned purpose of the present invention is achieved by the following technical measures:

[0042] A method for testing the dynamic response of a current sensor chip is provided, which is performed by using the above-mentioned testing device for testing the dynamic response of a current sensor chip.

[0043] The present invention discloses a test device and a test method for testing the dynamic response of a current sensor chip, wherein the test device is provided with: a load module connected to an ATE test device, a capacitor module and a current sensor chip to be tested respectively; a switch module controls the current to be turned on or off; the ATE test device outputs a high voltage signal to the load module and the switch module, outputs a constant voltage signal to the current sensor chip to be tested, and drives the switch module according to a preset timing signal; the capacitor module is connected to the ATE test device, the load module and the switch module as an energy storage capacitor; and a sampling module collects the current waveform and the first voltage waveform of the current sensor chip to be tested, and collects the second voltage waveform of the switch module. The present invention realizes the dynamic response time of the automatic test of the current sensor chip through the ATE test device, and the test time is extremely short. Moreover, the present invention can also control the voltage of the ATE test device, control the pulse frequency and the number of pulses through the input preset timing signal, so that the current rising slope, the current value and the number of pulses are adjustable, and the test scene is enriched. The present invention collects the current waveform and the voltage waveform through the sampling module, and calculates the corresponding test results according to the dynamic response test requirements, so that the test results are more accurate. Therefore, the present invention greatly improves the test efficiency and accuracy of the dynamic response time of the current sensor chip, and provides favorable support for the comprehensive performance evaluation and subsequent smooth application of the current sensor chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The present invention is further described with reference to the accompanying drawings, but the contents in the accompanying drawings do not constitute any limitation to the present invention.

[0045] Figure 1 It is a schematic diagram of a testing device for testing the dynamic response of a current sensor chip according to the present invention.

[0046] Figure 2 When the high constant voltage signal is positive, the sampling module collects the waveform diagram.

[0047] Figure 3 When the high constant voltage signal is reversed, the sampling module collects a waveform diagram.

[0048] Figure 4 This is a partial circuit diagram of the test device.

[0049] Figure 5 This is a schematic diagram of the adapter pins for ATE test equipment.

[0050] exist Figures 1 to 5 Including:

[0051] A load module 100 , a switch module 200 , a capacitor module 300 , a sampling module 400 , a high voltage source control port 500 , a signal source control port 600 , a drive port 700 , and a current sensing chip 800 to be tested. DETAILED DESCRIPTION

[0052] The technical solution of the present invention is further described in conjunction with the following embodiments. Example 1

[0053] A test device for testing the dynamic response of a current sensor chip, such as Figure 1 As shown, the settings are:

[0054] The load module 100 is respectively connected to the ATE test equipment, the capacitor module 300 and the current sensor chip 800 to be tested;

[0055] Switch module 200 - controls the current to be turned on or off;

[0056] ATE test equipment - outputs high voltage signals to the load module 100 and the switch module 200, outputs a constant voltage signal to the current sensor chip 800 to be tested, and drives the switch module 200 according to a preset timing signal; wherein the number of pulses of the preset timing signal is greater than or equal to 2, wherein the preset timing signal is compiled by an external computer;

[0057] Capacitor module 300 - as an energy storage capacitor, connected to ATE test equipment, load module 100 and switch module 200;

[0058] The sampling module 400 collects the current waveform and the first voltage waveform of the current sensor chip 800 to be tested, and collects the second voltage waveform of the switch module 200, wherein the sampling module 400 may specifically be an oscilloscope.

[0059] The ATE test equipment of the present invention is provided with:

[0060] High-voltage source control port 500 - provides a high-voltage signal to the load module 100 and the switch module 200, wherein the high-voltage source control port 500 of the present invention provides a ±200V pulse voltage;

[0061] The signal source control port 600 provides a constant voltage signal to the current sensor chip 800 to be tested, wherein the signal source control port 600 of the present invention provides a 5V working voltage;

[0062] Driving port 700 - drives the switch module 200 according to a preset timing signal.

[0063] The test process of the test device of the present invention is as follows: first, the signal source control port 600 provides a constant voltage signal to the VCC power supply terminal of the current sensor chip 800 to be tested, so that the current sensor chip 800 to be tested is in a normal working state; then the high-voltage source control port 500 provides a high voltage signal and charges the two ends of the capacitor module 300, and the drive port 700 controls the switch module 200 to be turned on according to the preset timing signal, and the current is turned on. Finally, the sampling module 400 records the voltage waveform at both ends of the CE of the IGBT in the switch module 200, the current waveform at the IP end of the current sensor chip, and the output voltage waveform, and obtains the dynamic response time of the current sensor chip 800 to be tested based on the collected voltage and current waveforms.

[0064] The present invention divides each pulse into four moments, which are defined as t0, t1, t2 and t3 from front to back, respectively, wherein t0 is the starting point of each pulse and t3 is the end point of each pulse. It should be noted that the duration of each pulse can be determined according to the specific situation, and the intervals of t0, t1, t2 and t3 are also determined according to the specific situation. The duration of the pulse in this embodiment is 20ms, the interval between t0 and t1 is 5ms, the interval between t1 and t2 is 5ms, and the interval between t2 and t3 is 10ms.

[0065] The preset timing signal of the present invention has multiple pulses, but each pulse is divided according to these four moments.

[0066] like Figure 2 As shown, when the high voltage source control port 500 outputs a positive high constant voltage signal, the operation of the test device for testing the dynamic response of the current sensor chip at each moment is as follows:

[0067] At t0, the signal source control port 600 outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip 800 to be tested, and the VOUT output terminal of the current sensor chip 800 to be tested responds by outputting a constant voltage signal;

[0068] At t1, the high voltage source control port 500 outputs a positive high constant voltage signal, and the sampling module 400 collects the second voltage waveform VDS of the switch module 200; the sampling module 400 specifically collects the second voltage waveform VDS of the CE end of the switch module 200;

[0069] At t2, the on-level (high level) rising edge comes, so that the on-level (high level) rising edge of the gate voltage VGS of the switch module 200 comes, the switch module 200 is turned on, and the second voltage waveform of the switch module 200 is pulled down, specifically, the voltage waveform VDS at the C-E end of the switch module 200 will be pulled down, and at the same time, the current waveform of the switch module 200 is established, the current sensor chip 800 to be tested detects the current waveform and outputs the first voltage waveform, and the sampling module 400 simultaneously collects the current waveform and the first voltage waveform. Usually, when the IP end (pin 1 and pin 5) of the current sensor chip 800 to be tested detects a forward current, the VOUT output end will output a forward proportional voltage relationship, such as Figure 2 As shown, since the high-voltage source control port 500 outputs a positive high constant voltage signal, the VOUT output terminal of the current sensor chip 800 to be tested will respond and output a voltage signal higher than the time t0, and the sampling module 400 collects the IP terminal current signal and the VOUT output terminal voltage signal of the current sensor chip to obtain the dynamic response time;

[0070] At t3 , the switch module 200 is turned off.

[0071] like Figure 3 As shown, when the high voltage source control port 500 outputs a reverse high constant voltage signal, the operation of the test device for testing the dynamic response of the current sensor chip at each moment is as follows:

[0072] At t0, the signal source control port 600 outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip 800 to be tested, and the VOUT output terminal of the current sensor chip 800 to be tested responds by outputting a constant voltage signal;

[0073] At t1, the high voltage source control port 500 outputs a reverse high constant voltage signal, and the sampling module 400 collects the second voltage waveform VDS of the switch module 200; the sampling module 400 specifically collects the second voltage waveform VDS of the CE end of the switch module 200;

[0074] At t2, the on-level (high level) rising edge comes, so that the on-level (high level) rising edge of the gate voltage VGS of the switch module 200 comes, the switch module 200 is turned on, and the second voltage waveform of the switch module 200 is pulled up, specifically, the voltage waveform VDS at the C-E end of the switch module 200 will be pulled up from the negative direction, and at the same time, the current waveform of the switch module 200 is established, the current sensor chip 800 to be tested detects the current waveform and outputs the first voltage waveform, and the sampling module 400 simultaneously collects the current waveform and the first voltage waveform. Usually, when the IP end of the current sensor chip 800 to be tested detects a reverse current, the VOUT output end will output a voltage relationship of reverse proportion, such as Figure 3As shown, since the high voltage source control port 500 outputs a reverse high constant voltage signal, the VOUT output terminal of the current sensing chip 800 to be tested will respond and output a voltage signal lower than the time t0, and the sampling module 400 collects the IP terminal current signal and the VOUT output terminal voltage signal of the current sensing chip to obtain the dynamic response time;

[0075] At t3 , the switch module 200 is turned off.

[0076] It should be noted that in Figure 2 or Figure 3 In the figure, t4-t7 is another pulse.

[0077] The test device for testing the dynamic response of the current sensor chip realizes automatic testing of the dynamic response time of the current sensor chip through the ATE test equipment, and the test time is extremely short. In addition, the present invention can also control the voltage of the ATE test equipment, control the pulse frequency and the number of pulses through the input preset timing signal, so that the current rising slope, the current value and the number of pulses are adjustable, thereby enriching the test scenarios. The present invention collects the current waveform and the voltage waveform through the sampling module 400, calculates the corresponding test results according to the dynamic response test requirements, and makes the test results more accurate. Therefore, the present invention greatly improves the test efficiency and accuracy of the dynamic response time of the current sensor chip, and provides favorable support for the comprehensive performance evaluation of the current sensor chip and the subsequent smooth application. Example 2

[0078] A test device for testing the dynamic response of a current sensor chip, such as Figure 4 As shown, other features are the same as those of Example 1, and further have the following features: pin 1 of the current sensor chip 800 U1 to be measured is connected to one end of the load module 100, pin 5 of the current sensor chip 800 U1 to be measured is connected to the switch module 200, pin 12 of the current sensor chip 800 U1 to be measured is connected to the sampling module 400, pin 10 of the current sensor chip 800 U1 to be measured is respectively connected to the FOVI0_FH terminal and the FOVI0_SH terminal of the signal source control port 600, and pin 15 of the current sensor chip 800 U1 to be measured is respectively connected to the FOVI3_FH terminal and the FOVI3_SH terminal of the signal source control port 600; pin 10 of the current sensor chip 800 U1 to be measured is used as the VCC power supply terminal; pin 12 of the current sensor chip 800 U1 to be measured is used as the VOUT output terminal.

[0079] The capacitor module 300 is provided with a coupling capacitor C1, a coupling capacitor C2 and a coupling capacitor C3. The positive electrodes of the coupling capacitor C1, the coupling capacitor C2 and the coupling capacitor C3 are all connected to the FPVI0_FH terminal of the high-voltage source control port 500. The positive electrodes of the coupling capacitor C1, the coupling capacitor C2 and the coupling capacitor C3 are also connected to the FPVI0_SH terminal of the high-voltage source control port 500. The positive electrode of the coupling capacitor C3 is connected to the other end of the load module 100, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are connected to the FPVI1_FL end of the high-voltage source control port 500, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are connected to the FPVI1_SL end of the high-voltage source control port 500, and the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are also grounded. The capacitance value of the coupling capacitor C1, the coupling capacitor C2 and the coupling capacitor C3 is 100 microfarads.

[0080] The load module 100 is provided with a resistor R1, one end of the resistor R1 is connected to pin 1 of the current sensing chip 800 U1 to be measured, and the other end of the resistor R1 is connected to the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2, and the positive electrode of the coupling capacitor C3. The resistor R1 of the present invention can be an adjustable resistor or a fixed resistor. When an adjustable resistor is selected, the impact current is adjusted by adjusting the resistance value of the resistor R1. When a fixed resistor is selected, the impact current can be adjusted by the voltage output by the ATE test equipment. In this embodiment, the resistor R1 is specifically a cement resistor.

[0081] The drive port 700 is a DIO interface, pins 1, 2, 3 and 4 of the DIO interface are all grounded, and pin 0 of the DIO interface is connected to the sampling module 400 .

[0082] The switch module 200 is provided with a semiconductor power device Q1, the G end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, the C end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, and the E end of the semiconductor power device Q1 is grounded; the semiconductor power device Q1 is an insulated gate bipolar transistor IGBT or a silicon carbide semiconductor field effect transistor SIC MOSFET. It should also be noted that the insulated gate bipolar transistor IGBT or the silicon carbide semiconductor field effect transistor SIC MOSFET are both common semiconductor power devices, and the common insulated gate bipolar transistor IGBT or the silicon carbide semiconductor field effect transistor SIC MOSFET can be used as the semiconductor power device Q1 of the present invention to realize the function of the switch module 200 of the present invention. The semiconductor power device Q1 of this embodiment is described by taking the insulated gate bipolar transistor IGBT as an example, and the model of the IGBT is IGW100N60H3.

[0083] The test device of the present invention is also provided with a peripheral circuit, which is provided with a resistor R2, a resistor R3, a capacitor C4, a capacitor C5 and a capacitor C6. The resistor R2 is arranged between the 15th pin of the current sensing chip 800 U1 to be measured and the FOVI3_FH terminal of the signal source control port 600. One end of the resistor R3 is connected to the sampling module 400, and the other end of the resistor R3 is connected in series with the capacitor C5 to be grounded. The 12th pin of the current sensing chip 800 U1 to be measured is also connected in series with the capacitor C4 to be grounded.

[0084] The capacitance values ​​of the capacitors C4 and C5 are 1 nanofarad, the capacitance value of the capacitor C6 is 10 nanofarad, the resistance value of the resistor R2 is 0 ohm, and the resistance value of the resistor R3 is 10 ohm.

[0085] It should be noted that in Figure 4 The sampling module 400 is not shown in the figure. In actual operation, the sampling module 400 obtains the required waveform through a coaxial cable, a voltage probe, or a current probe. Figure 5 The adapter is connected to the high voltage source control port 500, the signal source control port 600 and the drive port 700.

[0086] The testing device of this embodiment is composed of common electrical components and has the advantage of low production cost. Example 3

[0087] A method for testing the dynamic response of a current sensor chip is performed using the testing device for testing the dynamic response of a current sensor chip of Embodiment 1 or Embodiment 2.

[0088] The test method for the dynamic response of the current sensor chip realizes the automatic test of the dynamic response time of the current sensor chip through the ATE test equipment, and the test time is extremely short. In addition, the present invention can also make the current rising slope, current numerical value and pulse number adjustable by controlling the voltage size of the ATE test equipment, the pulse frequency and pulse number of the preset timing signal, thereby enriching the test scene. The present invention collects the current waveform and the voltage waveform through the sampling module 400, calculates the corresponding test results according to the dynamic response test requirements, and makes the test results more accurate. Therefore, the present invention greatly improves the test efficiency and accuracy of the dynamic response time of the current sensor chip, and provides favorable support for the comprehensive performance evaluation of the current sensor chip and the subsequent smooth application.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A test device for testing the dynamic response of a current sensor chip, characterized in that: The settings are: Load module: connected to ATE test equipment, capacitor module and current sensor chip to be tested respectively; Switch module - controls the current to be turned on or off; ATE test equipment - outputs high voltage signals to the load module and the switch module, outputs constant voltage signals to the current sensor chip to be tested, and drives the switch module according to a preset timing signal; Capacitor module - serving as an energy storage capacitor, connected to the ATE test equipment, the load module and the switch module; Sampling module - collecting the current waveform and the first voltage waveform of the current sensor chip to be measured, and collecting the second voltage waveform of the switch module; The ATE test equipment is provided with: High voltage source control port—provides high voltage signals to the load module and the switch module; Signal source control port: provides a constant voltage signal to the current sensor chip to be tested; Driving port—driving the switch module according to the preset timing signal; The number of pulses of the preset timing signal is greater than or equal to 2; Each pulse is divided into four moments, which are defined as t0, t1, t2 and t3 from the beginning to the end, where t0 is the starting point of each pulse and t3 is the end point of each pulse; When the high voltage source control port outputs a positive high constant voltage signal: At t0, the signal source control port outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip to be measured, and the VOUT output terminal of the current sensor chip to be measured responds by outputting a constant voltage signal; At t1, the high voltage source control port outputs a positive high constant voltage signal, and the sampling module collects the second voltage waveform of the switch module; At t2, the on-level rising edge comes, so that the on-level rising edge of the gate voltage VGS of the switch module comes, the switch module is turned on, the second voltage waveform of the switch module is pulled down, and the current waveform of the switch module is established. The current sensor chip to be measured detects the current waveform and outputs the first voltage waveform, and the sampling module simultaneously collects the current waveform and the first voltage waveform; At t3, the switch module is turned off; When the high voltage source control port outputs a reverse high constant voltage signal: At t0, the signal source control port outputs a positive constant voltage signal to the VCC power supply terminal of the current sensor chip to be measured, and the VOUT output terminal of the current sensor chip to be measured responds by outputting a constant voltage signal; At t1, the high voltage source control port outputs a reverse high constant voltage signal, and the sampling module collects the second voltage waveform of the switch module; At t2, the on-level rising edge comes, so that the on-level rising edge of the gate voltage VGS of the switch module comes, the switch module is turned on, the second voltage waveform of the switch module is pulled up, and the current waveform of the switch module is established. The current sensor chip to be measured detects the current waveform and outputs the first voltage waveform, and the sampling module simultaneously collects the current waveform and the first voltage waveform; At t3, the switch module is turned off.

2. The testing device for testing the dynamic response of a current sensor chip according to claim 1, characterized in that: The sampling module is an oscilloscope.

3. The testing device for testing the dynamic response of a current sensor chip according to claim 2, characterized in that: Pin 1 of the current sensor chip to be measured is connected to one end of the load module, pin 5 of the current sensor chip to be measured is connected to the switch module, pin 12 of the current sensor chip to be measured is connected to the sampling module, pin 10 of the current sensor chip to be measured is respectively connected to the FOVI0_FH terminal and the FOVI0_SH terminal of the signal source control port, and pin 15 of the current sensor chip to be measured is respectively connected to the FOVI3_FH terminal and the FOVI3_SH terminal of the signal source control port; Pin 10 of the current sensor chip to be tested is used as the VCC power supply terminal; Pin 12 of the current sensing chip to be measured serves as the VOUT output terminal.

4. The testing device for testing the dynamic response of a current sensor chip according to claim 3, characterized in that: The capacitor module is provided with a coupling capacitor C1, a coupling capacitor C2 and a coupling capacitor C3, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are all connected to the FPVI0_FH end of the high-voltage source control port, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are also connected to the FPVI0_SH end of the high-voltage source control port, the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3 are all connected to the other end of the load module, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are all connected to the FPVI1_FL end of the high-voltage source control port, the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are all connected to the FPVI1_SL end of the high-voltage source control port, and the negative electrode of the coupling capacitor C1, the negative electrode of the coupling capacitor C2 and the negative electrode of the coupling capacitor C3 are also grounded.

5. The testing device for testing the dynamic response of a current sensor chip according to claim 4, characterized in that: The load module is provided with a resistor R1, one end of the resistor R1 is connected to pin 1 of the current sensing chip to be measured, and the other end of the resistor R1 is connected to the positive electrode of the coupling capacitor C1, the positive electrode of the coupling capacitor C2 and the positive electrode of the coupling capacitor C3; The driving port is a DIO interface, pins 1, 2, 3 and 4 of the DIO interface are all grounded, and pin 0 of the DIO interface is connected to the sampling module.

6. The testing device for testing the dynamic response of a current sensor chip according to claim 5, characterized in that: The switch module is provided with a semiconductor power device Q1, the G end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, the C end of the semiconductor power device Q1 is connected to the 0 pin of the DIO interface, and the E end of the semiconductor power device Q1 is grounded; The semiconductor power device Q1 is an insulated gate bipolar transistor IGBT or a silicon carbide semiconductor field effect transistor SICMOSFET.

7. The testing device for testing the dynamic response of a current sensor chip according to claim 6, characterized in that: A peripheral circuit is also provided, and the peripheral circuit is provided with a resistor R2, a resistor R3, a capacitor C4, a capacitor C5 and a capacitor C6. The resistor R2 is provided between the 15th pin of the current sensing chip to be measured and the FOVI3_FH end of the signal source control port. One end of the resistor R3 is connected to the sampling module, and the other end of the resistor R3 is connected in series with the capacitor C5 to be grounded. The 12th pin of the current sensing chip to be measured is also connected in series with the capacitor C4 to be grounded.

8. A method for testing the dynamic response of a current sensor chip, characterized in that: The method is carried out using a testing device for testing the dynamic response of a current sensor chip as described in any one of claims 1 to 7.

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