LED and HEMT integrated device and preparation method thereof

Abstract

The present invention discloses an LED and HEMT integrated device and a method for preparing the same. The integrated device includes a substrate, at least one raised structure, an LED stack, and a HEMT stack: the raised structure is located on one side of the substrate; the raised structure includes different adjacent outer surfaces, at least part of the structure of the HEMT stack and at least part of the structure of the LED stack are located on different outer surfaces of the raised structure, and the HEMT stack and the LED stack are at least partially in contact; the HEMT stack includes a two-dimensional electron gas, which provides electrons to the LED stack. Through the above solution, monolithic integration of the LED and HEMT can be achieved, and the HEMT can be used to independently drive the LED. This simplifies the integration process, reduces the integration difficulty, reduces the size of the integrated device, and improves the performance of the integrated device while ensuring the LED driving effect.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing technology, and in particular to an LED and HEMT integrated device and a manufacturing method thereof. Background Art

[0002] Micro-LEDs (Micro Light Emitting Diodes) have shown great potential for applications in wearable devices, smartphones, and large-screen displays due to their advantages such as high brightness, low power consumption, long lifespan, and fast response time. However, the widespread application of Micro-LEDs is challenged by their integration and driving technologies.

[0003] In the existing technology, Micro-LED is generally integrated with complementary metal oxide semiconductor (CMOS) circuits. However, the integration technology of Micro-LED and CMOS circuits still includes problems such as size mismatch, high integration difficulty and poor heat dissipation. Summary of the Invention

[0004] In view of this, the present invention provides an LED and HEMT integrated device and a preparation method thereof, which realizes the monolithic integration of LED and HEMT, utilizes HEMT to independently drive LED, simplifies the integration process and reduces the integration difficulty while ensuring the LED driving effect.

[0005] In a first aspect, an embodiment of the present invention provides an LED and HEMT integrated device, comprising a substrate, at least one protruding structure, an LED stack, and a HEMT stack:

[0006] The raised structure is located on one side of the substrate;

[0007] The raised structure includes different outer surfaces adjacent to each other, at least a portion of the structure of the HEMT stack and at least a portion of the structure of the LED stack are respectively located on different outer surfaces of the raised structure, and the HEMT stack is in at least partial contact with the LED stack;

[0008] The HEMT stack includes a two-dimensional electron gas that provides electrons to the LED stack.

[0009] In a second aspect, an embodiment of the present invention further provides a method for preparing an LED and HEMT integrated device, comprising:

[0010] providing a substrate;

[0011] At least one protruding structure is formed on one side of the substrate; the protruding structure includes different outer surfaces adjacent to each other;

[0012] At least a partial structure of a HEMT stack and at least a partial structure of an LED stack are respectively prepared on different outer surfaces of the protruding structure; the HEMT stack is in at least partial contact with the LED stack, and the HEMT stack includes a two-dimensional electron gas that provides electrons to the LED stack.

[0013] The solution provided by the embodiments of the present invention can realize the integration of HEMT devices and Micro-LED devices on the same raised structure, simplifying the integration process and reducing the complexity and cost caused by multiple transfers and interlayer alignment in traditional methods. The raised structure can provide a high-quality crystal growth substrate for the HEMT stack and LED stack, which helps to optimize the electronic performance of the devices and obtain high-performance LED devices and HEMT devices with high electron mobility. The raised structure can better dissipate heat from the integrated device, solving the problem of heat concentration in traditional methods and improving the reliability and service life of the integrated device. The size of the integrated device is greatly reduced, making it possible to achieve high integration density and further miniaturization. Due to the small contact area between the raised structure and the substrate, the raised structure is easier to peel off the substrate, and the integrated device is easier to transfer, providing greater production flexibility, further reducing the production cost of Micro-LED display devices and realizing large-scale production applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A schematic structural diagram of an LED and HEMT integrated device provided by an embodiment of the present invention;

[0015] Figure 2 A schematic diagram of a top view of an electrode provided by the present invention;

[0016] Figure 3 A schematic structural diagram of another LED and HEMT integrated device provided by an embodiment of the present invention;

[0017] Figure 4 A schematic structural diagram of another LED and HEMT integrated device provided by an embodiment of the present invention;

[0018] Figure 5 A schematic structural diagram of another LED and HEMT integrated device provided by an embodiment of the present invention;

[0019] Figure 6 A flow chart of a method for manufacturing an LED and HEMT integrated device provided by an embodiment of the present invention;

[0020] Figure 7 for Figure 6 Schematic diagram of the preparation method shown;

[0021] Figure 8A flow chart of another method for preparing an LED and HEMT integrated device provided by an embodiment of the present invention;

[0022] Figure 9 for Figure 8 Schematic diagram of the preparation method shown;

[0023] Figure 10 A flow chart of another method for preparing an LED and HEMT integrated device provided in an embodiment of the present invention;

[0024] Figure 11 for Figure 10 Schematic diagram of the preparation method shown. DETAILED DESCRIPTION

[0025] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0026] Figure 1 A schematic diagram of the structure of an LED and HEMT integrated device provided by an embodiment of the present invention can be referred to Figure 1 The integrated device includes a substrate 1, at least one raised structure 2, an LED stack 3, and a HEMT stack 4: the raised structure 2 is located on one side of the substrate 1; the raised structure 2 includes different outer surfaces 20 adjacent to each other, at least part of the structure of the HEMT stack 4 and at least part of the structure of the LED stack 3 are respectively located on different outer surfaces 20 of the raised structure 2, and the HEMT stack 4 is at least partially in contact with the LED stack 3; the HEMT stack 4 includes a two-dimensional electron gas 2DEG, which provides electrons to the LED stack 3.

[0027] Among them, the substrate 1 can be a sapphire substrate, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, an aluminum nitride (AlN) substrate or a diamond substrate, but is not limited thereto. The embodiment of the present invention does not elaborate on this and does not limit this.

[0028] Further, if Figure 1 As shown, at least one protrusion 2 may be provided on one side of the substrate 1. The protrusion 2 serves as a base structure for the subsequent growth of the HEMT stack 4 and the LED stack 3. The specific shape of the protrusion 2 is not limited, and may include, for example, a cylindrical protrusion structure, a truncated cone protrusion structure, a prismatic protrusion structure, a truncated pyramid protrusion structure, and any variations of the above shapes. In the embodiments of the present invention, a cylindrical protrusion structure is used as an example.

[0029] The material of the raised structure 2 is not limited and can be selected by those skilled in the art based on actual needs. It is important to note that the raised structure 2 can be prepared from a material suitable for the growth of both the HEMT stack 4 and the LED stack 3. This allows the raised structure 2 to serve as a buffer structure, providing a good growth foundation for the HEMT stack 4 and the LED stack 3, thereby improving the growth quality of the epitaxial film. The material of the raised structure 2 includes, but is not limited to, high-resistance GaN material, which can refer to C-doped, Fe-doped, or unintentionally doped GaN material. The high-resistance GaN raised structure can isolate the substrate 1 from the device. For example, in some embodiments, the sheet resistance of the high-resistance GaN material can be greater than 10^5 Ohm / sq.

[0030] Among them, optional, such as Figure 1 As shown, a buffer layer 6 may be included between substrate 1 and raised structure 2. Buffer layer 6 is located on one surface of substrate 1, and raised structure 2 is located on the side of buffer layer 6 facing away from substrate 1. Buffer layer 6 may be a GaN buffer layer to provide a better growth environment for the subsequent GaN-based HEMT stack 4. When buffer layer 6 is provided between substrate 1 and raised structure 2, substrate 1 may be a sapphire substrate, Si substrate, or SiC substrate. The thickness of buffer layer 6 may be set within, but is not limited to, a range of 500 nm to 2 μm.

[0031] Of course, in other embodiments, the protruding structure 2 can be directly grown on one side surface of the substrate 1 without providing the buffer layer 6 . In this case, the substrate 1 is a GaN substrate.

[0032] Continue to refer Figure 1 The outer surface 20 of the protruding structure 2 may refer to the surface of the protruding structure 2 that is not in contact with the substrate 1 (or the buffer layer 6). Figure 1 In the orientation shown in FIG, the side surface of the raised structure 2 that contacts the substrate 1 or the buffer layer 6 is the bottom surface. The outer surface 20 of the raised structure 2 may include a top surface and a side surface. The top surface is the surface opposite to the bottom surface along the height direction of the raised structure 2, and the side surface is the surface connecting the top surface and the bottom surface. The height direction of the raised structure 2 corresponds to the thickness direction of the integrated device.

[0033] In the embodiment of the present invention, the HEMT stack 4 and the LED stack 3 can be respectively arranged on different outer surfaces 20 of the protrusion structure 2. The HEMT stack 4 can refer to a partial film structure of the HEMT, and the LED stack 3 can refer to a partial film structure of the Micro-LED device. Then, with the protrusion structure 2 as the core, the HEMT device and the Micro-LED device are formed in different directions of the protrusion structure 2.

[0034] For example, at least part of the structure of the HEMT stack 4 may be located on the top surface (i.e., the top) of the raised structure 2, and at least part of the structure of the LED stack 3 may be located on the side surface (sidewall) of the raised structure 2; alternatively, at least part of the structure of the HEMT stack 4 may be located on the side surface of the raised structure 2, and at least part of the structure of the LED stack 3 may be located on the top surface of the raised structure 2.

[0035] The HEMT stack 4 includes at least a channel layer 41 and a barrier layer 42. A two-dimensional electron gas (2DEG) forms between the channel layer 41 and the barrier layer 42. The 2DEG is a thin layer of highly concentrated electrons that forms at high speeds at the heterojunction between different Group III nitrides. The 2DEG region has low resistivity and good electron transport. Under the influence of an external electric field, electrons in the 2DEG can migrate within the HEMT stack 4. Because the HEMT stack 4 is in contact with the LED stack 3, the applied electric field allows electrons in the 2DEG to migrate to the LED stack 3. This allows electrons generated by the HEMT to serve as a source of electrons for the LED, thereby enabling the HEMT to drive the LED and completing the integration of a monolithic LED and HEMT.

[0036] The protruding structures 2 are arranged in a one-to-one correspondence with the monolithic LED and HEMT integrated device, that is, each protruding structure 2, the LED stack 3 and the HEMT stack 4 arranged on the protruding structure 2 form a monolithic LED and HEMT integrated device. Figure 1 As shown, the embodiment of the present invention takes a substrate 1 including a plurality of protrusion structures 2 arranged in an array as an example, but is not limited thereto. In this arrangement, a plurality of LED and HEMT integrated devices can be formed on one substrate 1, thereby realizing mass production of LED and HEMT integrated devices.

[0037] In addition, it is worth mentioning that in an embodiment of the present invention, the protrusion structure 2 may be a nanocolumn structure, that is, the diameter of the protrusion structure 2 does not exceed 1um, thereby reducing the device size, providing the possibility of achieving high integration density and further miniaturization, and meeting the application requirements of miniaturized high-performance display and driving devices.

[0038] It is understandable that the HEMT stack 4 and the LED stack 3 may further include any film layer structure known to those skilled in the art, and the embodiment of the present invention is not limited thereto.

[0039] In summary, in an embodiment of the present invention, a protruding structure is provided on a substrate, and a HEMT stack and an LED stack in contact with each other are provided on different outer surfaces of the protruding structure, and the two-dimensional electron gas in the HEMT stack is used to provide electrons for the Micro-LED device. The above integration scheme has the following advantages: First, HEMT and Micro-LED devices can be integrated on the same raised structure, simplifying the integration process and reducing the complexity and cost associated with multiple transfers and interlayer alignment in traditional methods. Second, by designing the material of the raised structure, the raised structure can provide a high-quality crystal growth substrate for the HEMT and LED stacks, helping to optimize the electronic performance of the devices and obtain high-performance LED devices and high-electron-mobility HEMT devices. Third, the raised structure can better dissipate heat from the integrated device, solving the problem of heat concentration in traditional methods and improving the reliability and service life of the integrated device. Fourth, the size of the integrated device is greatly reduced, facilitating high integration density and further miniaturization, meeting the application requirements of miniaturized high-performance display and driver devices. Fifth, device integration can be performed on different substrates. The small contact area between the raised structure and the substrate makes the raised structure easier to peel from the substrate and the integrated device easier to transfer, providing greater production flexibility, further reducing the production cost of Micro-LED display devices and enabling large-scale production applications.

[0040] You can continue to refer to Figure 1 In some possible embodiments, the protrusion structure 2 includes a first surface 21 and a second surface 22 adjacent to each other, the first surface 21 being a surface of the protrusion structure 2 away from the substrate 1, and the second surface 22 being a side surface of the protrusion structure 2; the HEMT stack 4 includes a channel layer 41 and a barrier layer 42, the channel layer 41 and the barrier layer 42 being stacked on the first surface 21 along the thickness direction X of the integrated device, and a two-dimensional electron gas 2DEG is formed between the channel layer 41 and the barrier layer 42; the LED stack 3 includes an active layer 31 and a hole transport layer 32, the active layer 31 covering the second surface 22, and the hole transport layer 32 being located on a side of the active layer 31 away from the protrusion structure 2.

[0041] Among them, Figure 1 As shown, the first surface 21 can be the top surface mentioned in the above embodiment, and the second surface 22 can be the side surface mentioned in the above embodiment. The thickness direction X of the integrated device can be the height direction of the protrusion structure 2, that is, the axial direction of the protrusion structure 2, and the direction Y parallel to the plane of the substrate 1 can be the diameter direction of the protrusion structure 2, that is, the radial direction. As an optional embodiment, at least a portion of the HEMT stack 4 can be located on the top of the protrusion structure 2, and at least a portion of the LED stack 3 can be located on the sidewall of the protrusion structure 2.

[0042] Specifically, the channel layer 41 and the barrier layer 42 of the HEMT stack 4 are stacked along the height direction of the protruding structure 2. That is, the channel layer 41 is located on the first surface 21 of the protruding structure 2, and the barrier layer 42 is located on the side surface of the channel layer 41 facing away from the protruding structure 2. Along the thickness direction X of the integrated device, the channel layer 41 and the barrier layer 42 can cover at least a portion of the first surface 21, and the two-dimensional electron gas 2DEG is formed in a portion of the channel layer 41 near the barrier layer 42.

[0043] The channel layer 41 may be a non-doped GaN channel layer with a thickness of 50-100 nm, and the barrier layer 42 may be an aluminum gallium nitride (AlGaN) barrier layer with a thickness of 20-30 nm, but is not limited thereto.

[0044] like Figure 1 As shown, the active layer 31 and hole transport layer 32 of the LED stack 3 are stacked radially along the protrusion structure 2. That is, the active layer 31 is located on the second surface 22 of the protrusion structure 2, and the hole transport layer 32 is located on the side of the active layer 31 facing away from the protrusion structure 2. The active layer 31 and hole transport layer 32 can be arranged around the sidewall of the protrusion structure 2, with the active layer 31 covering at least a portion of the second surface 22 of the protrusion structure 2. At least the active layer 31 of the LED stack 3 can be arranged in contact with the HEMT stack 4 to ensure that electrons from the two-dimensional electron gas (2DEG) can be transported to the active layer 31. The hole transport layer 32 is used to transport holes, and the electrons and holes recombine in the active layer 31 to emit light.

[0045] The active layer 31 may be an InGaN / GaN quantum well layer, and the hole transport layer 32 may be a p-type GaN layer, but is not limited thereto. For example, the active layer 31 may be an InGaN / GaN quantum well layer with 1 to 10 periods, wherein the thickness of the InGaN layer is in the range of 2 to 3 nm, and the thickness of the GaN layer is in the range of 8 to 15 nm; the thickness of the hole transport layer 32 is in the range of 50 to 300 nm, but is not limited thereto.

[0046] Optionally, an electron blocking layer 33 may be included between the active layer 31 and the hole transport layer 32. The electron blocking layer 33 may be, but is not limited to, an AlGaN electron blocking layer. The presence of the electron blocking layer 33 can prevent electrons from flowing in the opposite direction. The thickness of the electron blocking layer 33 may be set within the range of 10 to 30 nm, but is not limited to this.

[0047] Optional, you can continue to refer to Figure 1 The integrated device further includes a gate 7, a first electrode 8 and a second electrode 9; the gate 7 and the first electrode 8 are located on the side of the HEMT stack 4 away from the protruding structure 2, and the second electrode 9 is located on the side of the LED stack 3 away from the protruding structure 2.

[0048] The gate 7 is the control electrode of the HEMT device, which can be turned on or off based on the signal received by the gate 7. The first electrode 8 is the source (drain) of the HEMT device, and the second electrode 9 is the drain (source) of the HEMT device. The gate 7 and the first electrode 8 can be located on the side of the barrier layer 42 facing away from the channel layer 41, and the second electrode 9 can be located on the side of the hole transport layer 32 facing away from the protrusion structure 2.

[0049] When gate 7 receives an enable signal, the HEMT device turns on. The voltage applied by first electrode 8 is transmitted to second electrode 9, and electrons in the two-dimensional electron gas (2DEG) are transferred to active layer 31 in LED stack 3. Holes injected by second electrode 9 are then transferred to active layer 31 via hole transport layer 32, thereby causing the LED to emit light. In this way, first electrode 8 can be reused as the cathode of the LED device, and second electrode 9 can be reused as the anode of the LED device. The connection between LED stack 3 and HEMT stack 4 in the integrated device does not require additional metal wires, achieving a metal-free conductive interconnect. This further reduces the difficulty of manufacturing the monolithic integrated device, helps improve the integration level, and reduces the overall device size.

[0050] It is understandable that the process of preparing the electrode on the top of the protruding structure 2 is relatively simple. Figure 1 In the illustrated embodiment, the gate 7 and the first electrode 8 are located on the top of the protruding structure 2 , and the second electrode 9 is located on the sidewall of the protruding structure 2 , which helps to reduce the difficulty of preparing the electrodes.

[0051] Furthermore, the gate 7, the first electrode 8 and the second electrode 9 can be made of a metal conductive material or a transparent conductive material. The metal conductive material can be, for example, nickel (Ni), platinum (Pt), titanium (Ti) or aluminum (Al), and the transparent conductive material can be, for example, indium tin oxide (ITO), but is not limited thereto.

[0052] Optionally, the present invention does not limit the graphic shape of each electrode, and those skilled in the art can set it according to actual needs. Figure 2 A schematic diagram of the top view of an electrode provided by the present invention, with reference to Figure 1 and Figure 2 In an exemplary embodiment, in the projection on the plane where the substrate 1 is located, the gate 7 is located between the first electrode 8 and the second electrode 9. The top-view shape of the first electrode 8 and the second electrode 9 can be a ring. The first electrode 8 is arranged around the gate 7 on the barrier layer 42, and the second electrode 9 is arranged around the protruding structure 2. In this way, a better control effect can be achieved.

[0053] Further, you can continue to refer to Figure 1Along the thickness direction X of the integrated device, the active layer 31 extends beyond the protruding structure 2 and contacts at least part of the barrier layer 42 ; along the direction Y parallel to the plane of the substrate 1 , the channel layer 41 and the barrier layer 42 both overlap with the active layer 31 .

[0054] like Figure 1 As shown, in some embodiments of the present invention, in the thickness direction X of the integrated device, the projection of the protrusion structure 2 covers the projection of the channel layer 41 and the barrier layer 42. In other words, along the thickness direction X of the integrated device, the sidewalls of the channel layer 41 and the barrier layer 42 coincide with the sidewalls of the protrusion structure 2 or are located on the inner side of the sidewalls of the protrusion structure 2. In addition, along the thickness direction X of the integrated device, at least the top of the active layer 31 (the side facing away from the substrate 1) is higher than the top of the protrusion structure 2. That is, the active layer 31 extends to at least part of the sidewalls of the channel layer 41 and the barrier layer 42 along the thickness direction X of the integrated device and contacts the channel layer 41 and the barrier layer 42. Along the direction Y parallel to the plane of the substrate 1, the active layer 31 covers the channel layer 41 and the barrier layer 42.

[0055] In this configuration, the two-dimensional electron gas 2DEG formed between the channel layer 41 and the barrier layer 42 can directly contact the active layer 31 , thereby ensuring the transmission effect of electrons to the active layer 31 and improving the performance of the integrated device.

[0056] Figure 1 In the illustrated embodiment, the electron blocking layer 33 covers the surface of the active layer 31 facing away from the protruding structure 2, and the hole transport layer 32 covers the surface of the electron blocking layer 33 facing away from the active layer 31, so that along the thickness direction X of the integrated device, the tops of the electron blocking layer 33 and the hole transport layer 32 are higher than the top of the protruding structure 2, but the present invention is not limited to this. In embodiments not shown in the present invention, along the thickness direction X of the integrated device, the tops of the electron blocking layer 33 and the hole transport layer 32 may also be lower than the top of the protruding structure 2 or flush with the top of the protruding structure 2, which will not be described in detail in this embodiment of the present invention.

[0057] Figure 3 A schematic diagram of another LED and HEMT integrated device according to an embodiment of the present invention is provided. Figure 3 In other exemplary embodiments, along the thickness direction X of the integrated device, the tops of the active layer 31 and hole transport layer 32 of the LED stack 3 may be flush with the raised structure 2. Simultaneously, along the direction Y parallel to the plane of the substrate 1, the channel layer 41 and barrier layer 42 of the HEMT stack 4 extend beyond the raised structure 2. In other words, the projected areas of the channel layer 41 and barrier layer 42 on the substrate 1 are larger than the projected areas of the raised structure 2 and overlap the edges of the raised structure 2. In this arrangement, along the thickness direction X of the integrated device, the tops of the active layer 31 and hole transport layer 32 (the sides facing away from the substrate 1) are in contact with the side of the channel layer 41 facing away from the barrier layer 42.

[0058] Figure 1 and Figure 3 In the embodiment shown, the HEMT stack 4 and the LED stack 3 are prepared in different orders. Figure 1 In the corresponding embodiment, the channel layer 41 and the barrier layer 42 can be prepared in sequence on the first surface 21 of the protruding structure 2, and then the active layer 31 and the hole transport layer 32 can be prepared in sequence on the second surface 22 of the protruding structure 2 and the side walls of the channel layer 41 and the barrier layer 42. Figure 3 In the embodiment shown, the active layer 31 and the hole transport layer 32 can be prepared in sequence on the second surface 22 of the protruding structure 2, and then the channel layer 41 and the barrier layer 42 can be prepared in sequence on the first surface 21 of the protruding structure 2 and on top of the active layer 31 and the hole transport layer 32.

[0059] Figure 4 A schematic diagram of the structure of another LED and HEMT integrated device provided in an embodiment of the present invention can be referred to Figure 4 In other possible embodiments, the protrusion structure 2 still includes a first surface 21 and a second surface 22 adjacent to each other, the first surface 21 is a side surface of the protrusion structure 2 away from the substrate 1, and the second surface 22 is a side surface of the protrusion structure 2; the LED stack 3 includes an active layer 31 and a hole transport layer 32, and the active layer 31 and the hole transport layer 32 are stacked on the first surface 21 along the thickness direction X of the integrated device; the HEMT stack 4 includes a channel layer 41 and a barrier layer 42, the channel layer 41 covers the second surface 22, and the barrier layer 42 is located on the side of the channel layer 41 away from the protrusion structure 2, and a two-dimensional electron gas 2DEG is formed between the channel layer 41 and the barrier layer 42.

[0060] The first surface 21 and the second surface 22 are the same as those in the above embodiment and will not be described again here. Unlike the above embodiment, in this embodiment, at least part of the structure of the LED stack 3 may be located on the top of the protruding structure 2, and at least part of the structure of the HEMT stack 4 may be located on the sidewall of the protruding structure 2.

[0061] Specifically, if Figure 4 As shown, the active layer 31 and the hole transport layer 32 of the LED stack 3 are stacked along the height direction of the protruding structure 2, that is, the active layer 31 is located on the first surface 21 of the protruding structure 2, and the hole transport layer 32 is located on the side of the active layer 31 away from the protruding structure 2. Along the thickness direction X of the integrated device, the active layer 31 and the hole transport layer 32 can cover at least a portion of the first surface 21. Figure 4 In the illustrated embodiment, an electron blocking layer 33 is further included between the active layer 31 and the hole transport layer 32 , but the present invention is not limited thereto.

[0062] The channel layer 41 and barrier layer 42 of the HEMT stack 4 are stacked radially along the protrusion structure 2. Specifically, the channel layer 41 is located on the second surface 22 of the protrusion structure 2, and the barrier layer 42 is located on the surface of the active layer 31 facing away from the protrusion structure 2. The channel layer 41 and barrier layer 42 may be arranged around the sidewalls of the protrusion structure 2, with the channel layer 41 covering at least a portion of the second surface 22 of the protrusion structure 2. At least the active layer 31 of the LED stack 3 may be arranged in contact with the HEMT stack 4 to ensure that electrons from the two-dimensional electron gas (2DEG) can be transported to the active layer 31. The materials and thicknesses of the channel layer 41, barrier layer 42, active layer 31, and hole transport layer 32 may be the same as those in the above-described embodiment and will not be further described here. Figure 4 The advantage of the illustrated embodiment is that the coverage area of ​​the HEMT stack 4 is relatively large, which is effective in improving the response rate of the integrated device.

[0063] Further, Figure 4 In the embodiment shown, due to the change in the relative positions of the HEMT stack 4 and the LED stack 3, the positions of the gate 7, the first electrode 8 and the second electrode 9 also need to be adjusted. Figure 4 As shown, the gate 7 and the first electrode 8 are located on the sidewalls of the protruding structure 2 , and the second electrode 9 is located on the top of the protruding structure 2 .

[0064] Further, you can continue to refer to Figure 4 Along the direction Y parallel to the plane of the substrate 1, the active layer 31 extends beyond the protruding structure 2 and contacts at least part of the barrier layer 42; along the thickness direction X of the integrated device, the channel layer 41 and the barrier layer 42 both overlap with the active layer 31.

[0065] like Figure 4 As shown, when the LED stack 3 is located on top of the raised structure 2, the tops of the channel layer 41 and the barrier layer 42 (the side facing away from the substrate 1) can be arranged flush with the raised structure 2 along the thickness direction X of the integrated device. At the same time, along the direction Y parallel to the plane of the substrate 1, the active layer 31 extends beyond the raised structure 2. That is, the projected area of ​​the active layer 31 on the substrate 1 is larger than the projected area of ​​the raised structure 2. Along the thickness direction X of the integrated device, the active layer 31 covers the edge of the raised structure 2. The tops of the channel layer 41 and the barrier layer 42 are in contact with the side of the active layer 31 facing away from the hole transport layer 32. That is, the active layer 31 covers the tops of the channel layer 41 and the barrier layer 42. In this arrangement, the two-dimensional electron gas (2DEG) can directly contact the active layer 31, ensuring the transmission of electrons to the active layer 31 and improving the performance of the integrated device.

[0066] Figure 4In the illustrated embodiment, the electron blocking layer 33 covers the surface of the active layer 31 on one side facing away from the protruding structure 2, and the hole transport layer 32 covers the surface of the electron blocking layer 33 on the other side facing away from the active layer 31, so that along the thickness direction X of the integrated device, the electron blocking layer 33 and the hole transport layer 32 also cover the channel layer 41 and the barrier layer 42, but this is not actually limited to this.

[0067] In this embodiment, a channel layer 41 and a barrier layer 42 may be prepared in sequence on the second surface 22 of the protruding structure 2, and then an active layer 31 and a hole transport layer 32 may be prepared in sequence on the second surface 22 of the protruding structure 2 and on top of the channel layer 41 and the barrier layer 42.

[0068] Of course, in other embodiments not shown, along the thickness direction X of the integrated device, the sidewalls of the active layer 31 and the hole transport layer 32 may coincide with the sidewalls of the protrusion structure 2 or be located on the inner side of the sidewalls of the protrusion structure 2. The tops of the channel layer 41 and the barrier layer 42 (the side facing away from the substrate 1) are higher than the top of the protrusion structure 2, that is, the channel layer 41 and the barrier layer 42 extend to at least part of the sidewalls of the active layer 31 along the thickness direction X of the integrated device, and the channel layer 41 covers at least part of the active layer 31 and the hole transport layer 32. The specific structure can be Figure 1 The positions of the HEMT stack 4 and the LED stack 3 are interchanged based on the above, which will not be described in detail in the present invention.

[0069] Optional, Figure 5 A schematic diagram of the structure of another LED and HEMT integrated device provided in an embodiment of the present invention can be referred to Figure 5 In some embodiments, one side of the substrate 1 further includes a mask layer 10, the mask layer 10 includes at least one mask opening 101, and the side of the protrusion structure 2 close to the substrate 1 is located in the mask opening 101; at least one outer surface 20 of the protrusion structure 2 is in contact with the mask layer 10, and any one of the HEMT stack 4 and the LED stack 3 is located on the surface of the mask layer 10 on the side facing away from the substrate 1.

[0070] Figure 5 In the illustrated embodiment, a buffer layer 6 is disposed between the substrate 1 and the raised structure 2. In this case, the mask layer 10 can be located on the side of the buffer layer 6 facing away from the substrate 1. A photolithography process can be used to form at least one mask opening 101 in the mask layer 10. The mask opening 101 exposes the buffer layer 6 (or substrate 1). Along the thickness direction X of the integrated device, the raised structure 2 overlaps with the mask opening 101. The mask opening 101 serves as a growth window for the raised structure 2. The raised structure 2 grows upward from the buffer layer 6 (or substrate 1) exposed by the mask opening 101, forming the raised structure 2.

[0071] Optionally, the material of the mask layer 10 includes but is not limited to SiN x, SiO2 or Al2O3, etc., which are not described in detail or limited in the embodiment of the present invention. The thickness of the mask layer 10 can be set between 30 and 200 nm, but is not limited thereto.

[0072] By providing the mask layer 10 and the mask opening 101 , a better growth space can be provided for the protrusion structure 2 , thereby ensuring the growth uniformity of the protrusion structure 2 in its height direction.

[0073] Furthermore, the mask opening 101 may include a circular mask opening, and the diameter of the circular mask opening is 300-1000 nm; the height of the protrusion structure 2 is 500-5000 nm.

[0074] As described in the above embodiment, the protrusion structure 2 can be a cylindrical protrusion structure or a truncated cone-shaped protrusion structure. The shape of the mask opening 101 defines the projection shape of the protrusion structure 2 in the thickness direction X of the integrated device. Therefore, the projection of the mask opening 101 in the thickness direction X of the integrated device can be circular. In addition, the diameter of the circular mask opening 101 can be set to 300 to 1000 nm, so that the diameter of the protrusion structure 2 is also within this numerical range, thereby achieving the growth of nano-columnar protrusion structures 2.

[0075] Of course, the projection of the mask opening 101 in the thickness direction X of the integrated device may also be polygonal, and the side length of the polygonal mask window may be set to 300-1000 nm. In this case, the protruding structure 2 is a prism-shaped or pyramid-shaped protruding structure 2 .

[0076] In some embodiments, the height of the raised structure 2 can be set within a range of 500 to 5000 nm. It will be appreciated that the diameter and height of the raised structure 2 are related to the relative areas of the subsequently grown HEMT stack 4 and LED stack 3. Based on actual testing, setting the raised structure 2 diameter between 300 and 1000 nm and the height between 500 and 5000 nm ensures that the HEMT stack 4 and LED stack 3 occupy a moderate proportion of the raised structure 2 area, resulting in better overall performance of the integrated device.

[0077] Based on the same concept, an embodiment of the present invention further provides a method for preparing an LED and HEMT integrated device, which is used to prepare the LED and HEMT integrated device provided by any embodiment of the present invention. Figure 6 A flowchart of a method for preparing an LED and HEMT integrated device provided by an embodiment of the present invention is provided. Figure 7 for Figure 6 The schematic diagram of the preparation method shown can be combined with reference Figure 6 and Figure 7 The method for preparing an integrated device of LED and HEMT comprises the following steps:

[0078] S110 , providing a substrate.

[0079] The substrate 1 may be a sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, an aluminum nitride AlN substrate or a diamond substrate, but is not limited thereto. The embodiments of the present invention do not elaborate on this and do not limit this.

[0080] S120 , preparing at least one protruding structure on one side of the substrate.

[0081] refer to Figure 7 In Figure (b), at least one raised structure 2 can be selectively grown on one side of the substrate 1. The raised structure 2 serves as the base structure for the subsequent growth of the HEMT stack 4 and LED stack 3. The material of the raised structure 2 includes, but is not limited to, high-resistance GaN material. For example, the raised structures 2 can be grown in an array on one side of the substrate 1 using a metal-organic chemical vapor deposition (MOCVD) process, but is not limited thereto. The height and dimensions of the raised structure 2 can be set by those skilled in the art according to actual needs and are not limited in the present embodiment. For example, the height of the raised structure 2 can be set to 500 to 5000 nm, and the spacing between adjacent raised structures 2 can be set to 500 to 1500 nm. When the raised structure 2 is a cylindrical raised structure, the diameter of the raised structure 2 can be set to 300 to 1000 nm. When the raised structure 2 is a prismatic raised structure, the side length of the raised structure 2 can be set to 300 to 1000 nm.

[0082] The protruding structure 2 includes different outer surfaces 20 adjacent to each other. The outer surface 20 of the protruding structure 2 may refer to other surfaces of the protruding structure 2 except the surface facing the substrate 1 . The different outer surfaces 20 have different directions.

[0083] Optionally, in some embodiments, a buffer layer 6 may be formed on one side of the substrate 1 before forming the protruding structure 2. Exemplarily, the GaN buffer layer may be formed using MOCVD, molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE) processes, but is not limited thereto. The thickness of the buffer layer 6 may be controlled to be between 500 nm and 2 μm, but is not limited thereto.

[0084] S130 , respectively preparing at least a portion of the structure of the HEMT stack and at least a portion of the structure of the LED stack on different outer surfaces of the protruding structure.

[0085] Further, refer to Figure 7In Figure (c), HEMT stack 4 and LED stack 3 are formed on different outer surfaces 20 of protrusion structure 2. Then, with protrusion structure 2 as the core, HEMT devices and Micro-LED devices are formed in different directions of protrusion structure 2. HEMT stack 4 is at least partially in contact with LED stack 3. The HEMT stack 4 contains a two-dimensional electron gas (2DEG), which provides electrons to LED stack 3.

[0086] For example, at least part of the structure of the HEMT stack 4 may be located on the top surface (i.e., the top) of the protruding structure 2, and at least part of the structure of the LED stack 3 may be located on the side (sidewall) of the protruding structure 2; or, at least part of the structure of the HEMT stack 4 may be located on the side of the protruding structure 2, and at least part of the structure of the LED stack 3 may be located on the top surface of the protruding structure 2. Figure 7 The first scenario is shown. Under the influence of an applied electric field, electrons in the 2DEG (two-dimensional electron gas) can move within the HEMT stack 4. Because the HEMT stack 4 is in contact with the LED stack 3, the applied electric field also allows electrons in the 2DEG to move to the LED stack 3. This allows electrons generated by the HEMT to serve as a source of electrons for the LED, thus enabling the HEMT to drive the LED and completing the integration of a monolithic LED and HEMT.

[0087] The preparation process of the HEMT stack 4 and the LED stack 3 is not limited. For example, the film layers of the HEMT stack 4 can be sequentially prepared on one surface of the protrusion structure 2 by the MOCVD process, and the film layers of the LED stack 3 can be sequentially prepared on the other surface of the protrusion structure 2 by the MOCVD process.

[0088] Further, in the continued reference Figure 7 In the middle (c) figure, after the HEMT stack 4 and the LED stack 3 are prepared, a gate 7 and a first electrode 8 can be prepared on the side of the HEMT stack 4 away from the protrusion structure 2, and a second electrode 9 can be prepared on the side of the LED stack 3 away from the protrusion structure 2.

[0089] For example, a gate electrode window and a first electrode window can be formed on the side of the HEMT stack 4 facing away from the protruding structure 2 by photolithography and etching processes, and a second electrode window can be formed on the side of the LED stack 3 facing away from the protruding structure 2. Subsequently, a metal electrode can be deposited in the gate electrode window to form the gate 7, a metal electrode can be deposited in the first electrode window to form the first electrode 8, and a metal electrode can be deposited in the second electrode window to form the second electrode 9 by electron beam evaporation.

[0090] The above solution enables monolithic integration of LEDs and HEMTs, allowing the HEMT to independently drive the LED. This simplifies the integration process, reduces integration difficulty, reduces the size of the integrated device, and improves the performance of the integrated device, all while ensuring effective LED driving. The method for preparing an LED and HEMT integrated device provided in this embodiment of the present invention includes all the technical features and corresponding beneficial effects of the LED and HEMT integrated device provided in any embodiment of the present invention. For any details not fully described here, reference may be made to the corresponding embodiments of the aforementioned integrated device.

[0091] Optionally, in some embodiments, the raised structure includes a first surface and a second surface adjacent to each other, the first surface being a surface of the raised structure away from the substrate, and the second surface being a side surface of the raised structure; the above (S130) can be refined as follows: S231, sequentially preparing a channel layer and a barrier layer on the first surface to form at least a partial structure of the HEMT stack; the channel layer and the barrier layer are stacked along the thickness direction of the integrated device, and a two-dimensional electron gas is formed between the channel layer and the barrier layer; S232, sequentially preparing an active layer and a hole transport layer on the second surface to form at least a partial structure of the LED stack; the active layer covers the second surface, and the hole transport layer is located on the side of the active layer away from the raised structure. Figure 8 A flow chart of another method for preparing an LED and HEMT integrated device provided by an embodiment of the present invention, Figure 9 for Figure 8 The schematic diagram of the preparation method shown can be combined with reference Figure 8 and Figure 9 , the preparation method comprises the following steps:

[0092] S210 , providing a substrate.

[0093] S220 , preparing at least one protruding structure on one side of the substrate.

[0094] The protruding structure includes different outer surfaces adjacent to each other.

[0095] S231 , sequentially preparing a channel layer and a barrier layer on the first surface to form at least a partial structure of a HEMT stack.

[0096] refer to Figure 9 In Figure (c), the channel layer 41 and barrier layer 42 of the HEMT stack 4 can be sequentially formed on top of the protrusion structure 2. In this embodiment, along the thickness direction X of the integrated device, the projection of the protrusion structure 2 covers the projections of the channel layer 41 and the barrier layer 42.

[0097] For example, an MOCVD process can be used to grow an undoped GaN channel layer on top of the protruding structure 2, and the thickness can be set to 50 to 100 nm; then an MOCVD process is used to grow an AlGaN barrier layer on the surface of the channel layer 41 facing away from the protruding structure 2, and the thickness can be set to 20 to 30 nm.

[0098] S232, sequentially preparing an active layer and a hole transport layer on the second surface to form at least a partial structure of the LED stack.

[0099] Further, refer to Figure 9 In the middle (d) figure, after the channel layer 41 and the barrier layer 42 are prepared, the active layer 31 and the hole transport layer 32 of the LED stack 3 can be sequentially prepared on the sidewalls of the protruding structure 2. The active layer 31 and the hole transport layer 32 can be arranged around the sidewalls of the protruding structure 2. In addition, along the thickness direction X of the integrated device, the active layer 31 can extend beyond the protruding structure 2 and contact at least part of the barrier layer 42; along the direction Y parallel to the plane of the substrate 1, the channel layer 41 and the barrier layer 42 both overlap with the active layer 31. That is, the active layer 31 extends along the thickness direction X of the integrated device to at least part of the sidewalls of the channel layer 41 and the barrier layer 42, and contacts the channel layer 41 and the barrier layer 42. The two-dimensional electron gas 2DEG formed between the channel layer 41 and the barrier layer 42 can directly contact the active layer 31, ensuring the transmission effect of electrons to the active layer 31 and improving the performance of the integrated device.

[0100] Optionally, in some embodiments, after the active layer 31 is grown, an electron blocking layer 33 may be first prepared on the surface of the active layer 31 facing away from the protruding structure 2 , and then a hole transport layer 32 may be prepared on the side of the electron blocking layer 33 facing away from the active layer 31 .

[0101] In this embodiment, the gate 7 and the first electrode 8 are located on the side surface of the barrier layer 42 away from the channel layer 41, that is, the top of the protruding structure 2; the second electrode 9 is located on the side surface of the hole transport layer 32 away from the active layer 31, that is, the side wall of the protruding structure 2.

[0102] Of course, in other implementations of this embodiment, the order of the above (S231) and (S232) can be interchanged. Specifically, the active layer 31 and the hole transport layer 32 can be prepared in sequence on the second surface 22 of the protruding structure 2. At this time, along the thickness direction X of the integrated device, the top of the active layer 31 and the hole transport layer 32 are flush with the top of the protruding structure 2; then, the channel layer 41 and the barrier layer 42 are prepared in sequence on the first surface 21 of the protruding structure 2, and the channel layer 41 covers the first surface 21 and the top of the active layer 31 and the hole transport layer 32.

[0103] Optionally, in other embodiments, the above (S130) may be refined as follows: an active layer and a hole transport layer are sequentially prepared on the first surface to form at least a partial structure of the LED stack; and a channel layer and a barrier layer are sequentially prepared on the second surface to form at least a partial structure of the HEMT stack.

[0104] The structure of the integrated device can refer to Figure 4 Specifically, the active layer 31 and hole transport layer 32 of the LED stack 3 can be sequentially formed on the top of the raised structure 2, and the channel layer 41 and barrier layer 42 of the HEMT stack 4 can be sequentially formed on the sidewalls of the raised structure 2. The channel layer 41 and barrier layer 42 can be arranged around the sidewalls of the raised structure 2. In this way, the LED stack 3 is located on the top of the raised structure 2, and the HEMT stack 4 is located on the sidewalls of the raised structure 2.

[0105] Furthermore, in this embodiment, the LED stack 3 can be first formed on top of the raised structure 2, and then the HEMT stack 4 can be formed on the sidewalls of the raised structure 2, the active layer 31, and the sidewalls of the hole transport layer 32, so that along the thickness direction X of the integrated device, the HEMT stack 4 extends beyond the raised structure 2 and upward to contact the active layer 31, and along the direction Y parallel to the plane of the substrate 1, the active layer 31 overlaps with the channel layer 41 and the barrier layer 42. Alternatively, a HEMT stack 4 can be first formed on the sidewall of the protruding structure 2 so that along the thickness direction X of the integrated device, the tops of the channel layer 41 and the barrier layer 42 are flush with the top of the protruding structure 2; then an LED stack 3 is formed on top of the protruding structure 2, the channel layer 41, and the barrier layer 42 so that along the direction Y parallel to the plane of the substrate 1, the active layer 31 extends beyond the protruding structure 2 and contacts at least part of the barrier layer 42, and along the thickness direction X of the integrated device, the channel layer 41 and the barrier layer 42 both overlap with the active layer 31. The two detailed solutions in this embodiment are not described in detail in the present invention, and those skilled in the art can refer to the above. Figure 5 and Figure 7 The technical solution is adaptively adjusted, and the preparation process and parameters of each film layer in the HEMT stack 4 and the LED stack 3 can also refer to the above embodiments and will not be repeated here.

[0106] Optionally, in some embodiments, before the above (S120), it may also include: S311, preparing a mask layer on one side of the substrate; S312, forming a mask opening in the mask layer; the substrate is exposed from the mask opening; (S120) can be refined into: S320, growing a protruding structure in the mask opening. Figure 10 A flowchart of another method for preparing an LED and HEMT integrated device provided by an embodiment of the present invention is provided. Figure 11 for Figure 10 The schematic diagram of the preparation method shown can be combined with reference Figure 10 and Figure 11, the preparation method comprises the following steps:

[0107] S310 , providing a substrate.

[0108] S311 , preparing a mask layer on one side of the substrate.

[0109] refer to Figure 11 In the middle (b), the material of the mask layer 10 includes but is not limited to SiN x , SiO2 or Al2O3, etc., and the thickness can be 30 to 200 nm, but is not limited thereto. For example, the mask layer 10 can be grown by low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or magnetron sputtering.

[0110] S312 , forming at least one mask opening in the mask layer.

[0111] Further, refer to Figure 11 In Figure (c), a portion of the mask layer 10 is removed through photolithography and etching processes to form at least one mask opening 101 in the mask layer 10. For example, a plurality of mask openings 101 may be arranged in an array. The shape and size of the mask opening 101 are designed based on the subsequently grown protruding structure 2. For example, the mask opening 101 may be circular or polygonal, and the diameter (side length) of the circular mask opening (polygonal mask opening) may be set to 300 to 1000 nm.

[0112] S320 , growing a protruding structure in the mask opening.

[0113] Further, refer to Figure 11 In Figure (d), the mask opening 101 serves as a growth window for the protrusion structure 2. The protrusion structure 2 grows upward from the buffer layer 6 (or substrate 1) exposed by the mask opening 101 to form the protrusion structure 2. The preparation process of the protrusion structure 2 is the same as that in the above embodiment and will not be repeated here.

[0114] S330 , respectively preparing at least a portion of the structure of the HEMT stack and at least a portion of the structure of the LED stack on different outer surfaces of the protruding structure.

[0115] refer to Figure 11 As shown in FIG. 5 (e), the preparation methods of the HEMT stack 4 and the LED stack 3 can refer to the above embodiments and will not be described again here.

[0116] For example, based on the above embodiment, the present invention further provides a specific implementation of a method for preparing an LED and HEMT integrated device. Referring to the following, the preparation method includes the following steps:

[0117] Step 1: Provide a substrate, which may be a sapphire substrate, a SiC substrate, a Si substrate, a GaN substrate, an AlN substrate, or a diamond substrate.

[0118] Step 2: A GaN buffer layer is grown on the substrate using MOCVD, MBE or HVPE process. The specific growth process parameters may be: temperature 1000-1100°C; pressure 100-400 mbar; V-III ratio 500-3000 (the molar ratio of the group V source and the group III source introduced into the reaction chamber); H2 or H2+N2 as the carrier gas); the GaN buffer layer thickness may be 500nm-2um.

[0119] Step 3: Deposit a mask layer on the GaN buffer layer using PECVD, LPCVD, ALD or magnetron sputtering technology. The mask layer material can be SiN. x , SiO2 or Al2O3 mask layer thickness can be 30 ~ 200nm.

[0120] Step 4: Through photolithography and etching processes, a plurality of mask openings arranged in an array are formed in the mask layer. The diameter of the mask openings can be 300 to 1000 nm, and the spacing is 500 to 1500 nm.

[0121] Step 5. Use the MOCVD process to grow a GaN protruding structure at the mask opening, and make the GaN protruding structure high-resistance (sheet resistance >10^5Ohm / sq) by C doping, Fe doping or unintentional doping. The specific growth process parameters can be: temperature 850~1000℃; pressure 50~200mbar; V-III ratio 50~400, H2 or H2+N2 as carrier gas; the thickness of the GaN protruding structure can be 500~5000nm.

[0122] Step 6: Use the MOCVD process to sequentially grow an undoped GaN channel layer and an AlGaN barrier layer on top of the GaN raised structure. The specific growth parameters for the undoped GaN channel layer can be: temperature 1000-1100°C; pressure 100-400 mbar; V-III ratio 50-400; H2 or H2+N2 carrier gas, and the thickness of the undoped GaN channel layer can be 50-100 nm. The specific growth parameters for the AlGaN barrier layer can be: temperature 1050-1200°C; pressure 100-200 mbar; Al content 0.2-0.3; V-III ratio 50-400; H2 or H2+N2 as carrier gas; and the thickness of the AlGaN barrier layer can be 20-30 nm.

[0123] Step 7: Use MOCVD to sequentially grow an InGaN / GaN quantum well layer, an AlGaN electron barrier layer, and a p-type GaN layer on the sidewalls of the GaN protrusion structure. The InGaN / GaN quantum well layer can have 1 to 10 periods, with the InGaN layer having a thickness of 2 to 3 nm. Specific growth parameters can be: temperature 700 to 800°C; pressure 200 to 600 mbar; V-III ratio 10,000 to 40,000; N2 as carrier gas; the GaN layer having a thickness of 8 to 15 nm. Specific growth parameters can be: temperature 830 to 950°C; pressure 200 to 600 mbar; V-III ratio 5,000 to 20,000; N2 as carrier gas. The specific growth parameters for the AlGaN electron-blocking layer can be: temperature 950-1100°C; pressure 100-200 mbar; V-III ratio 5000-10000; H2 or H2+N2 as carrier gas; the thickness of the AlGaN electron-blocking layer can be 10-30 nm. The specific growth parameters for the p-type GaN layer can be: temperature 950-1100°C; pressure 100-400 mbar; V-III ratio 5000-20000; H2 or H2+N2 as carrier gas; the thickness of the p-type GaN layer can be 50-300 nm.

[0124] Step 8: Processing the device structure obtained by the epitaxial growth as described above by chip processing, forming a gate electrode window and a first electrode window on the side of the HEMT stack away from the raised structure by photolithography and etching processes, and forming a second electrode window on the side of the LED stack away from the raised structure. Subsequently, a metal electrode is deposited in the gate electrode window to form a gate, a metal electrode is deposited in the first electrode window to form a first electrode, and a metal electrode is deposited in the second electrode window to form a second electrode by electron beam evaporation.

[0125] Note that the above are only preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations, and substitutions are possible for those skilled in the art without departing from the scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the scope of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. An LED and HEMT integrated device, characterized in that: The method comprises a substrate, at least one raised structure, an LED stack and a HEMT stack: The protruding structure is located on one side of the substrate; The raised structure includes different outer surfaces adjacent to each other, at least a portion of the structure of the HEMT stack and at least a portion of the structure of the LED stack are respectively located on different outer surfaces of the raised structure, and the HEMT stack is at least partially in contact with the LED stack; The HEMT stack includes a two-dimensional electron gas, and the two-dimensional electron gas provides electrons to the LED stack; The HEMT stack includes a channel layer and a barrier layer, wherein the two-dimensional electron gas is formed between the channel layer and the barrier layer; The LED stack includes an active layer and a hole transport layer, wherein the hole transport layer is located on a side of the active layer away from the protrusion structure; The active layer extends beyond the protruding structure and contacts at least a portion of the barrier layer. Both the channel layer and the barrier layer overlap with the active layer.

2. The LED and HEMT integrated device according to claim 1, wherein: The protruding structure includes a first surface and a second surface adjacent to each other, the first surface is a side surface of the protruding structure away from the substrate, and the second surface is a side surface of the protruding structure; The HEMT stack includes a channel layer and a barrier layer, wherein the channel layer and the barrier layer are stacked on the first surface along the thickness direction of the integrated device, and the two-dimensional electron gas is formed between the channel layer and the barrier layer; The LED stack includes an active layer and a hole transport layer, the active layer covers the second surface, and the hole transport layer is located on a side of the active layer away from the protruding structure.

3. The LED and HEMT integrated device according to claim 2, wherein: Along the thickness direction of the integrated device, the active layer exceeds the protruding structure and contacts at least a portion of the barrier layer; along a direction parallel to the plane where the substrate is located, the channel layer and the barrier layer both overlap with the active layer.

4. The LED and HEMT integrated device according to claim 1, wherein: The protruding structure includes a first surface and a second surface adjacent to each other, the first surface is a side surface of the protruding structure away from the substrate, and the second surface is a side surface of the protruding structure; The LED stack includes an active layer and a hole transport layer, and the active layer and the hole transport layer are stacked on the first surface along the thickness direction of the integrated device; The HEMT stack includes a channel layer and a barrier layer, wherein the channel layer covers the second surface, the barrier layer is located on a side of the channel layer away from the protruding structure, and the two-dimensional electron gas is formed between the channel layer and the barrier layer.

5. The LED and HEMT integrated device according to claim 4, characterized in that: Along a direction parallel to the plane of the substrate, the active layer extends beyond the protruding structure and contacts at least a portion of the barrier layer; along a thickness direction of the integrated device, both the channel layer and the barrier layer overlap with the active layer.

6. The LED and HEMT integrated device according to claim 1, wherein: The integrated device further includes a gate, a first electrode and a second electrode; The gate and the first electrode are located on a side of the HEMT stack facing away from the protruding structure, and the second electrode is located on a side of the LED stack facing away from the protruding structure.

7. The LED and HEMT integrated device according to claim 1, wherein: One side of the substrate further includes a mask layer, the mask layer includes at least one mask opening, and the side of the protrusion structure close to the substrate is located in the mask opening; At least one outer surface of the protruding structure is in contact with the mask layer, and any one of the HEMT stack and the LED stack is located on a surface of the mask layer facing away from the substrate.

8. The LED and HEMT integrated device according to claim 7, wherein: The mask opening includes a circular mask opening, and the diameter of the circular mask opening is 300-1000 nm; The height of the protruding structure is 500-5000 nm.

9. A method for preparing an LED and HEMT integrated device, characterized in that: include: providing a substrate; preparing at least one protruding structure on one side of the substrate; The raised structure includes different outer surfaces that are adjacent to each other; At least a partial structure of a HEMT stack and at least a partial structure of an LED stack are respectively formed on different outer surfaces of the protruding structure; the HEMT stack is in at least partial contact with the LED stack, the HEMT stack includes a two-dimensional electron gas, and the two-dimensional electron gas provides electrons to the LED stack; The protruding structure includes a first surface and a second surface adjacent to each other, the first surface is a side surface of the protruding structure away from the substrate, and the second surface is a side surface of the protruding structure; At least a portion of the structure of the HEMT stack and at least a portion of the structure of the LED stack are respectively prepared on different outer surfaces of the protruding structure, comprising: A channel layer and a barrier layer are sequentially formed on the first surface to form at least a partial structure of the HEMT stack; the channel layer and the barrier layer are stacked along the thickness direction of the integrated device, and the two-dimensional electron gas is formed between the channel layer and the barrier layer; An active layer and a hole transport layer are sequentially prepared on the second surface to form at least a partial structure of the LED stack; the active layer covers the second surface, and the hole transport layer is located on a side of the active layer away from the protruding structure.

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