Integrated circuit element integrating four basic passive component functions and its design method and preparation method

Abstract

The present invention discloses an integrated circuit element integrating four basic passive component functions and a design method and a preparation method thereof. The high-performance integrated circuit element selects a suitable single crystal material with a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, a microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity as a carrier, and applies different voltage conditions along electrodes in different directions. The four basic passive circuit component functions of a memristor, a proton-type inductor, a linear resistor and a capacitor can be realized in a single basic circuit element, breaking the spatial barriers between basic passive circuit elements, significantly reducing energy consumption and delay, greatly improving the upper limit of the miniaturization and high performance development of integrated circuits, and having great potential in the field of integrated circuits.

Description

Technical Field

[0001] The present invention belongs to the field of integrated circuit basic passive circuit elements, and in particular relates to an integrated circuit element integrating the functions of four basic passive elements, and a design method and a preparation method thereof. Background Art

[0002] Integrated circuits are the core of modern electronic devices. The advancement of integrated circuit technology has improved the performance, reliability and cost-effectiveness of devices, making them smaller, faster and more energy-efficient, thus promoting the progress of consumer electronics, industrial automation and smart cities. The development of integrated circuits lies in how to improve the integration level to achieve higher performance and smaller size. Therefore, the development ideas can be divided into the integration of basic circuit elements with different functions in a single framework in the micro field (i.e., the realization of integrated circuit components, Integrated circuit element) and the improvement of integrated technology in the macro field (such as process, packaging technology, etc.).

[0003] On a macro level, from the large-scale integration of hundreds of components in 1960 to the ultra-large-scale integration of billions today, the demand for miniaturization has led to the continuous reduction in the size of basic components, resulting in inevitable quantum effects, which has gradually brought the development of integrated circuits close to the physical limit. The difficulty of its preparation process and the required energy consumption have increased sharply, so researchers generally start from new integration processes such as integrated design and system-level packaging to find breakthroughs. Although in-depth research on macro-integration processes has promoted the further development of integrated circuits, the physical limitations caused by the independent mechanisms of different basic passive components on a micro level still exist, and the energy consumption and delay caused by signal transmission between basic components cannot be reduced.

[0004] From a microscopic perspective, basic circuit elements include active and passive elements. Compared with active circuit elements that rely on external electric fields, passive elements have greater potential for high integration.

[0005] In integrated circuits, the four basic passive circuit elements derived from the four basic circuit variables - current i, voltage u, charge q and magnetic flux φ - resistors, capacitors, inductors and memristors play an irreplaceable and important role. Among them, the development of the memristor field has achieved the merger of basic computing elements and basic storage elements (i.e., storage and computing in one). Furthermore, researchers are pursuing the merger of sensor functions on the basis of storage and computing in one, that is, making sensing, storage and computing integrated chips, thereby further improving the integration and performance of integrated circuits. In-depth research on memristors has improved the integration of integrated circuits to a certain extent and has effectively promoted the development of integrated circuits. However, it is still limited by the differences in physical mechanisms and device structures between basic passive elements, especially the construction requirements of the special spiral coils of inductors, which still limit the upper limit of integrated circuit development.

[0006] The emergence of emergent inductors breaks away from the need for spiral coil structure of traditional inductors and provides a structural basis for the integration of four basic passive circuit elements. However, its realization requires low resistance to facilitate the flow of electrons, thereby driving the local magnetic moment. This is fundamentally inconsistent with the need for switchable high and low resistance states of memristors and the need for capacitors to generally be made of insulating materials. In addition, the emergent inductors proposed so far use electrons with small effective mass as carriers. Due to the inverse proportional relationship between the inductance value and the carrier mass, the inductance performance is destined to be poor. Summary of the invention

[0007] The technical problem to be solved by the present invention is to provide an integrated circuit element and a design method and a preparation method that integrate the functions of four basic passive circuit elements, thereby solving the problem in the prior art that the basic passive circuit elements on the integrated circuit are spatially independent of each other, limiting the further development of the miniaturization and high performance of the integrated circuit.

[0008] The present invention adopts the following technical solutions to solve the above technical problems:

[0009] An integrated circuit element integrating the functions of four basic passive circuit elements comprises a silicon oxide insulating substrate, a plurality of bottom electrodes are arranged above the silicon oxide insulating substrate, a single crystal slice is arranged on top of the bottom electrodes, a top electrode is arranged on top of the single crystal slice, the bottom electrode comprises two pairs of metal electrodes arranged along the x-axis and y-axis directions of the silicon oxide insulating substrate respectively, and a metal electrode arranged at an angle of 45 degrees between the x-axis and the y-axis; wherein the single crystal slice has a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, a microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity properties; the bottom electrode at an angle of 45 degrees between the x-axis and the y-axis and the top electrode on the single crystal slice form a pair of metal electrodes in the z-axis direction, different voltage conditions are applied between the metal electrode pairs in the x-axis, y-axis and z-axis directions respectively, to realize the functions of the four basic passive circuit elements.

[0010] A DC voltage is applied between the two metal electrodes in the x-axis direction to realize the memristor function; an AC voltage is applied between the two metal electrodes in the y-axis direction to realize the proton inductor function; a DC voltage is applied between the two metal electrodes in the y-axis direction to realize the linear resistor function; an AC voltage is applied between the two metal electrodes in the z-axis direction to realize the capacitor function.

[0011] Two pairs of mutually perpendicular electrodes in the x-axis and y-axis directions are parallel to the a-axis and b-axis of the single crystal sample respectively.

[0012] The bottom electrode and the top electrode are both surface-grown metal electrodes with a thickness of 10 nm.

[0013] A design method for an integrated circuit element integrating the functions of four basic passive circuit elements comprises the following steps:

[0014] Step 1, applying an AC voltage along the y-axis direction of the element to realize the function of a proton-type emergent inductor through the coaxial magnetoelectric coupling effect and the spin transfer torque;

[0015] Step 2: Apply a DC voltage along the x-axis direction of the element to release or recycle protons through the spin-orbit charge coupling mechanism, regulate the proton concentration in the channel, change the resistance state, and realize the memristor function;

[0016] Step 3, applying an AC voltage along the z-axis direction of the element, utilizing the inverse-axis magnetoelectric coupling characteristic that cannot generate inductance in the z-axis direction, the ferroelectric polarization characteristic that can bind charges, and the interlayer force to inhibit proton transport and avoid leakage current, thereby realizing the capacitor function;

[0017] Step 4: Applying a DC voltage along the y-axis direction of the element can realize the function of a linear resistor.

[0018] The specific implementation process of step 1 is as follows:

[0019] According to the emergent inductance theory formula, it can be known that the inductance value is proportional to the effective mass of the carriers. Protons with high effective mass are selected as the driving force for the local magnetic moment movement inside the single crystal thin film structure to increase the inductance value.

[0020] According to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magneto-electric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal slice under the action of an external alternating electric field, so as to regulate the proton spin and achieve the simultaneous change of the proton spin and momentum, thus forming "effective spin-orbit coupling";

[0021] The spin of protons changes during the movement, generating a self-selected transfer torque acting on the local magnetic moment, forming an equivalent perturbation magnetic field, driving the local magnetic moment to precess around the effective magnetic field direction of the single crystal thin film itself, superimposing the phenomenon of nutation;

[0022] In the absence of proton flow, the local magnetic moment only precesses around the effective magnetic field, and the angle between the local magnetic moment and the effective magnetic field remains unchanged; when the proton flow passes through the local magnetic moment, it is assumed that the spin transfer torque and the perturbation magnetic field and the local magnetic moment The three are perpendicular to each other;

[0023] Different moments with the same and The local magnetic moment of is placed in the same Bloch sphere, The motion trajectory forms a conical structure with a changing solid angle; it is concluded that the Berry connection The time derivative can induce an electric field ; Under the action of the induced electric field, an electromotive force is induced, generating the required emergent inductance, among which, is the angle between the local magnetic moment and the effective magnetic field, is the time rate of change of the angle between the local magnetic moment and the effective magnetic field, is the unit charge.

[0024] The motion of a proton can be expressed as: ,in is the proton canonical momentum, is the coupling constant, is the component of proton momentum, is the component of the proton spin, is the effective mass of the proton, is the proton spin, is the effective coupling factor of proton momentum and spin caused by magnetoelectric coupling, is the coordinate subscript, representing xyz.

[0025] Local magnetic moment Driven by protons with variable spin directions, the continuous change is expressed by the following formula:

[0026] ,

[0027] in, where is the effective magnetic field, is the perturbation magnetic field generated by the spin transfer torque.

[0028] The method for preparing an integrated circuit element based on four basic passive circuit element functions comprises the following steps:

[0029] Step a, growing a 10 nm thick metal electrode pattern as a bottom electrode on the silicon oxide wafer covering the mask by magnetron sputtering, and growing a 10 nm thick metal electrode pattern as a top electrode on the polyvinyl alcohol film covering the mask;

[0030] Step b, selecting a single crystal sheet with a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity properties and transferring it to the surface of the polydimethylsiloxane film;

[0031] Step c, non-destructively laminating the single crystal sheet on the surface of polydimethylsiloxane to the metal electrode, so that the two pairs of electrodes in the x and y directions are parallel to the a-axis and b-axis directions of the single crystal sheet respectively, and a single electrode forming an angle of 45° with the x direction serves as the bottom electrode in the z direction;

[0032] Step d, applying a variable temperature to the single crystal thin slice to separate the polydimethylsiloxane film so that the single crystal thin slice is closely attached to the bottom metal electrode;

[0033] Step e, transferring the polyvinyl alcohol film on which the top electrode is grown so that its back is bonded to the surface of the polydimethylsiloxane film, adjusting the top electrode on the surface of the polyvinyl alcohol film to be perpendicular to the bottom electrode in the z direction under the single crystal slice through a transfer platform, bonding the top electrode on the surface of the polyvinyl alcohol film to the single crystal slice without loss, and forming a pair of electrodes in the z direction with the bottom electrode of the single crystal slice;

[0034] Step f: applying a changing temperature to the single crystal wafer, separating the polyvinyl alcohol film, adhering it to the surface of the silicon wafer, and carrying the top electrode to closely fit the single crystal wafer.

[0035] A chip comprises the integrated circuit element.

[0036] A computer device includes a processor, wherein the processor circuit includes at least one of the aforementioned chips.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] 1. The present invention provides a high-performance integrated circuit element that integrates the functions of four basic passive circuit elements and has the function of a coil-free proton inductor with ultra-high inductance performance. Compared with the basic passive circuit elements currently widely used in integrated circuits, the advantage of the high-performance integrated circuit element is that the size of the high-performance integrated circuit element is only at the micron level, and it has the potential for further miniaturization.

[0039] 2. Structurally, three pairs of electrodes are required to be connected to the single crystal material that meets the requirements in directions perpendicular to each other. The realization of each function only requires a pair of electrodes in the corresponding direction to apply the required voltage conditions. It is similar to the structure of other basic electronic components in integrated circuits and has good three-dimensional compatibility.

[0040] 3. The inductance value of the inductor function in high-performance integrated circuit components is as high as 10 3 H or above, the corresponding inductance density is 10 5 H / mm 2 , and the energy consumption is extremely low, and the required driving voltage is only less than 1V.

[0041] 4. High-performance integrated circuit components maintain the inductor function, where the switching ratio of the memristor function is >10 and the duration is >10 3 s, cycle test tolerance>10 2 Second, it has volatile multi-gate adjustability, which can simulate synaptic plasticity and realize learning functions from simple to complex.

[0042] 5. The quality factor of capacitor function is >50.

[0043] 6. High-performance integrated circuit elements can simultaneously realize the functions of four basic passive circuit elements in a single basic element. Compared with the integrated circuit elements required to achieve the same functions, the required space size, energy consumption and delay can be significantly reduced, essentially raising the upper limit of the miniaturization and high performance development of integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a schematic diagram of the structure of a high-performance integrated circuit element that theoretically integrates the functions of four basic passive circuit elements in the present invention.

[0045] Figure 2 This is a schematic diagram of the application of a high-performance integrated circuit element that integrates the functions of four basic passive circuit elements of the present invention.

[0046] Figure 3 (a) is a planar optical image of a high-performance integrated circuit element; (b) is a schematic diagram of the cross-sectional structure of a high-performance integrated circuit element.

[0047] Figure 4 This is a test diagram of proton concentration and mobility of the high-performance integrated circuit element of the present invention.

[0048] Figure 5 This is a functional test diagram of the memristor of the high-performance integrated circuit element of the present invention.

[0049] Figure 6 (a) is a functional test diagram for simulating long-term potentiation / long-term weakening of synapses; (b) is a functional test diagram for simulating timing-dependent plasticity of synapses; (c) is a test diagram for simulating heterogeneous synaptic plasticity (the first electrode 1 on the y-axis and the second electrode 3 on the y-axis are gates); (d) is a test diagram for simulating heterogeneous synaptic plasticity (the first electrode 5 on the z-axis and the second electrode 6 on the z-axis are gates).

[0050] Figure 7 (a) is a test diagram of the complex impedance frequency relationship of the inductor function of a high-performance integrated circuit element; (b) is a test diagram of the inductance value frequency relationship of the inductor function of a high-performance integrated circuit element.

[0051] Figure 8 This is a resistor function test diagram of the high-performance integrated circuit element of the present invention.

[0052] Fig. 9 (a) is a test diagram of the complex impedance frequency relationship of the capacitor function of the high-performance integrated circuit element; (b) is a test diagram of the quality factor frequency relationship of the capacitor function of the high-performance integrated circuit element.

[0053] Among them, the markings in the figure are: 1-the first electrode of the y-axis; 2-the first electrode of the x-axis; 3-the second electrode of the y-axis; 4-the second electrode of the x-axis; 5-the first electrode of the z-axis; 6-the second electrode of the z-axis; 7-silicon oxide insulating substrate; 8-single crystal thin film; 9-control line between the x-axis electrodes; 10-control line between the y-axis electrodes; 11-control line between the z-axis electrodes. DETAILED DESCRIPTION

[0054] The structure and working process of the present invention will be further described below in conjunction with the accompanying drawings.

[0055] The four basic passive circuit elements widely used in integrated circuits—resistors, capacitors, inductors, and memristors—are independent of each other due to their different physical mechanisms and device structures, which limits the further development of integrated circuit miniaturization, and the energy consumption and delay caused by signal transmission between basic elements cannot be reduced. Based on the needs of high performance and miniaturization of integrated circuits, we propose an integrated framework that can simultaneously include the functions of multiple basic passive circuit elements, such as Figure 1 As shown. In this framework, different component functions can be realized by applying different voltage conditions through electrodes in different directions, breaking the physical barriers between basic passive components and realizing multiple basic passive circuit component functions in a single framework, essentially raising the upper limit of the development of miniaturization and high performance of integrated circuits. Considering that each basic passive circuit component requires different mechanisms, especially the structurally integrable emergent inductor that does not require a coil structure requires a lower resistance to facilitate the flow of electrons, thereby driving the change of the local magnetic moment of the magnetic material, while the memristor requires a transition between high and low resistance states, and the capacitor requires good insulation. Therefore, through theoretical analysis of the core physical mechanisms of the four basic passive circuit components, the design of how to simultaneously meet the corresponding basic passive component requirements in a single framework is the key problem that needs to be solved first.

[0056] An integrated circuit element structure integrating the functions of four basic passive circuit elements comprises a silicon oxide insulating substrate, a plurality of bottom electrodes are arranged above the silicon oxide insulating substrate, a single crystal slice is arranged on top of the bottom electrodes, a top electrode is arranged on top of the single crystal slice, the bottom electrode comprises two pairs of metal electrodes arranged along the x-axis and y-axis directions of the silicon oxide insulating substrate respectively, and a metal electrode arranged at an angle of 45 degrees between the x-axis and the y-axis; wherein the single crystal slice has a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, a microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity properties; the bottom electrode at an angle of 45 degrees between the x-axis and the y-axis and the top electrode on the single crystal slice form a pair of metal electrodes in the z-axis direction, different voltage conditions are applied between the metal electrode pairs in the x-axis, y-axis and z-axis directions respectively, to realize the functions of the four basic passive circuit elements.

[0057] Specific embodiments, such as Figure 1 , Figure 2 As shown,

[0058] An integrated circuit element structure integrating the functions of four basic passive circuit elements comprises a silicon oxide insulating substrate 7, a plurality of bottom electrodes are arranged above the silicon oxide insulating substrate 7, including two pairs of electrodes in the x-axis and y-axis directions and a z-axis bottom electrode, the bottom electrode comprises two pairs of metal electrodes arranged along the x-axis and y-axis directions of the silicon oxide insulating substrate respectively, and a metal electrode arranged at an angle of 45 degrees between the x-axis and the y-axis, which are respectively an x-axis first electrode 2, an x-axis second electrode 4, a y-axis first electrode 1, a y-axis second electrode 3, and a z-axis first electrode 5 at an angle of 45 degrees between the x-axis and the y-axis, a single crystal thin slice 8 is arranged above the bottom electrode, and a top electrode (i.e., a z-axis second electrode 6) is arranged on the top of the single crystal thin slice 8; wherein the single crystal thin slice 8 has a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, a microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity properties; different voltage conditions are applied between the metal electrode pairs in the x-axis, y-axis and z-axis directions respectively to realize the functions of the four basic passive circuit elements.

[0059] The design method of the integrated circuit element integrating the functions of four basic passive circuit elements is as follows:

[0060] The key to the realization of the integrated framework lies in how inductors, memristors and capacitors can coexist ingeniously. From a theoretical analysis, according to the latest research in the field of inductors, the core of the physical mechanism of emergent inductance without spiral coils lies in the exchange coupling between the intrinsic property spin of electrons and the local magnetic moment in magnetic materials, which drives the change of local magnetic moment to produce a dynamic Berry phase, replacing the role of traditional electromagnetic potential. From the Landau-Lifshitz-Gilbert (LLG) equation that describes the interaction between magnetic field and electron spin: , we know that when the electron spin With local magnetic moment When there is an angle between them, a spin transfer torque caused by the exchange between the electron and the local magnetic moment will be generated, which can change the electron spin and the local magnetic moment at the same time without relying on the charge property. At the same time, in order to introduce switchable high and low resistance states to meet the requirements of memristance and capacitance insulation, it is necessary to use carriers with large effective mass, such as protons, to improve the emergent inductance performance. Such an integrated framework needs to be based on the conductivity of protons with high effective mass. During its transport process, the proton density will change under the control of the electric field, thereby changing the resistance state. Considering the spin-orbit coupling strength formula derived from the relativistic effect, the coupling strength is inversely proportional to the effective mass of the carrier. It is difficult for protons to change their own spin during the transport process. Therefore, the realization of the integrated framework requires the effective magnetic field in the framework to change under the action of an external electric field in the same direction, that is, the coaxial magnetoelectric coupling effect, so as to regulate the proton spin and form the proton "effective spin-orbit coupling". Our preliminary theoretical derivation shows that the movement of protons can be expressed as: ,in is the proton canonical momentum, is the coupling constant, is the component of proton momentum, is the component of the proton spin, is the effective mass of the proton, is the proton spin, is the effective coupling factor of proton momentum and spin due to magnetoelectric coupling ( is the coordinate subscript, representing xyz). From this we can see that the local magnetic moment Driven by protons with variable spin directions, continuous changes can be produced: ( where is the effective magnetic field, The perturbation magnetic field generated by the spin transfer torque produces a proton-driven high-performance emergent inductor.

[0061] 1. In order to further solve the problem of weak intrinsic spin-orbit coupling effect of protons with high effective mass, the present invention also provides a design method and a control method for the proton-type inductor function of a high-performance integrated circuit element. The specific technical solution is as follows:

[0062] A method for designing a proton-type inductor function of a high-performance integrated circuit element comprises the following steps:

[0063] Step a: According to the emergent inductance theory formula, it can be known that the inductance value is proportional to the effective mass of the carriers, and protons are selected as the driving force for the local magnetic moment movement inside the single crystal thin film structure;

[0064] Step b, according to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magneto-electric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal slice under the action of an external alternating electric field, so as to regulate the proton spin and realize the simultaneous change of the proton spin and momentum, thereby forming "effective spin-orbit coupling";

[0065] Step c, the spin of the proton changes during the movement, generating a self-selected transfer torque acting on the local magnetic moment, forming an equivalent perturbation magnetic field, driving the local magnetic moment to precess around the effective magnetic field direction of the single crystal thin slice itself, superimposing a nutation phenomenon;

[0066] In the absence of proton flow, the local magnetic moment only precesses around the effective magnetic field, and the angle between the local magnetic moment and the effective magnetic field remains unchanged;

[0067] When protons flow through the local magnetic moment, assuming that the spin transfer torque, the perturbation magnetic field and the local magnetic moment The three are perpendicular to each other;

[0068] Step d: Different moments with the same and The local magnetic moment of is placed in the same Bloch sphere, The motion trajectory forms a conical structure with a changing solid angle; it is concluded that the Berry connection The time derivative can induce an electric field ; Under the action of the induced electric field, an electromotive force is induced, generating the required emergent inductance, among which, is the angle between the local magnetic moment and the effective magnetic field, is the time rate of change of the angle between the local magnetic moment and the effective magnetic field, is the unit charge.

[0069] The theoretical formula of the emergent inductance is as follows:

[0070]

[0071] in, is the spin polarization of the proton, is the effective mass of the proton, is the length of the proton channel, A is the cross-sectional area of ​​the proton channel, is the proton "effective spin-orbit coupling" strength factor, is the current density in the direction of proton flow, At angular frequency The complex value of the dynamic magnetic susceptibility, subscript Represents the crystal axis direction.

[0072] The phenomenon in step c can be described by the LLG equation:

[0073] ,

[0074] here is the gyromagnetic ratio, is the Gilbert damping constant, is the effective magnetic field of the single crystal slice itself, represents the equivalent perturbative magnetic field originating from the self-selected transfer torque.

[0075] The proton-type emergent inductance is calculated by the following formula:

[0076] ,

[0077] in, is the proton channel length in the b-axis direction of the single crystal thin film, that is, the length of a unit cell in the crystal structure is the channel length, and K is the magnetocrystalline anisotropy constant.

[0078] A method for regulating the function of a proton inductor of a high-performance integrated circuit element is provided. The resonant frequency of the proton inductor is obtained, and an alternating voltage is applied between electrodes at both ends in the y direction. The frequency of the applied alternating voltage is lower than the resonant frequency.

[0079] 2. In order to further solve the problem of regulating the proton concentration and changing the resistance state to realize the memristor function, the present invention also provides a design method and a control method for the memristor function of a high-performance integrated circuit element. The specific technical solution is as follows:

[0080] A method for designing a memristor function of a high-performance integrated circuit element comprises the following steps:

[0081] Step A: According to the microscopic spin-orbit charge coupling mechanism, under the action of the DC voltage applied on the x-axis, the crystal structure in the single crystal thin film is distorted, thereby generating charge transfer, achieving the release and recovery of protons, and regulating the proton concentration in the channel;

[0082] Step B: the proton concentration in the channel changes, changing the Schottky barrier formed by the contact between the single crystal sheet and the electrode, further enhancing the change of resistance, and realizing the high and low resistance switching required for the memristor function;

[0083] Step C: applying a pulse voltage along the x-axis can further regulate the proton concentration and realize the synaptic plasticity function;

[0084] In step D, the y-axis and z-axis can be used as gates to regulate the proton transport in the x-axis direction, thereby realizing the advanced synaptic function - heterosynaptic plasticity.

[0085] 3. In order to further solve the problem of storing charge on the basis of avoiding leakage current to realize the function of capacitor, the present invention also provides a design method and a control method of the capacitor function of a high-performance integrated circuit element. The specific technical scheme is as follows:

[0086] A method for designing a capacitor function of a high performance integrated circuit element comprises the following steps:

[0087] The first step is to use the inherent polarization electric field to bind charges at both ends of the single crystal slice according to the ferroelectric polarization characteristics of the single crystal slice to achieve the purpose of storage;

[0088] The second step is to use the interlayer force within the single crystal thin film to suppress the proton transmission in the z-axis direction, avoid the generation of leakage current, and realize the capacitor function with a high quality factor.

[0089] Example 1: A method for preparing an integrated circuit element integrating the functions of four basic passive circuit elements is as follows:

[0090] Single crystal thin sheet materials with layered structure, room temperature single-phase magnetoelectric coupling anisotropy, microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity are selected, and high-quality single crystal thin sheet samples are prepared according to the standard growth scheme. Suitable single crystal thin sheets are selected by electrostatic adsorption through a gold-plated fine needle for subsequent device preparation. A 9-11 nm thick metal electrode pattern is grown on a silicon oxide wafer covered with a mask by magnetron sputtering as a bottom electrode, and a 9-11 nm thick metal electrode pattern is grown on the surface of a polyvinyl alcohol (PVA) film as a top electrode. The target value of the thickness of the metal electrode in this embodiment is set to 10 nm. Since the actual accuracy of the instrument will have a certain error, after the program sets the target data, the instrument is controlled to operate. The actual product and the set data have a certain tolerance. The error caused by the instrument accuracy is within the allowable range. The actual electrode thickness within the tolerance range obtained after the instrument operation is no problem. For example, the instrument error is 0.5 nm, so as long as the electrode thickness is between 9.5 and 10.5 nm, the target of 10 nm is reached by default.

[0091] The selected single crystal is then transferred to the surface of the polydimethylsiloxane film. The angle is adjusted by the two-dimensional transfer platform so that the two pairs of mutually perpendicular electrodes in the x-axis and y-axis directions are parallel to the a-axis and b-axis of the single crystal thin film on the surface of the polydimethylsiloxane, respectively, and the single crystal sample is non-destructively bonded to the metal electrode. A single electrode with an angle of 45° to the x-direction is used as the bottom electrode in the z-direction. Then, a heating rate of 5°C / min is applied to the single crystal thin film to rise to 30°C and hold for 5 minutes, and then the temperature is cooled to room temperature at a cooling rate of 5°C / min. The viscosity of the polydimethylsiloxane film is reduced after heating, and the adsorption of the single crystal thin film to the metal electrode is enhanced. The polydimethylsiloxane film is separated so that the single crystal thin film is tightly bonded to the bottom metal electrode. Transfer the polyvinyl alcohol film with the top electrode so that its back is bonded to the surface of the polydimethylsiloxane film. Use the transfer platform to adjust the top electrode on the surface of the polyvinyl alcohol film to be perpendicular to the bottom electrode in the z direction under the single crystal wafer. Bond the top electrode on the surface of the polyvinyl alcohol film to the single crystal wafer without loss, forming a pair of electrodes in the z direction with the bottom electrode of the single crystal wafer. Then apply a variable temperature to the single crystal wafer, heating it to 50°C at a rate of 10°C / min and maintaining it for 5 minutes, then cooling it to room temperature at a rate of 5°C / min. Slowly lift the glass slide. At this time, due to the different viscosity caused by the temperature change, the polyvinyl alcohol film is tightly attached to the surface of the silicon oxide wafer and separated from the polydimethylsiloxane film, while the top electrode is tightly attached to the single crystal wafer, thereby completing the device preparation (PVA can be removed by wet method later). Figure 3 As shown, the numbers represent the electrode numbers.

[0092] Example 2, proton concentration and mobility test of high performance integrated circuit components.

[0093] The memristor function of the x-axis direction of the high-performance integrated circuit element depends on the regulation of proton concentration to achieve the switching of high and low resistance states. Due to the spin-orbit charge coupling of the single crystal thin film, the structure is distorted under the regulation of the external DC electric field, charge transfer, release and recovery of protons, change of proton concentration, and switching of high and low resistance states. Constant currents of different conditions are applied along the x-axis direction of the element by the comprehensive physical property measurement instrument (PPMS) to test the proton concentration under different current conditions (such as Figure 4 As shown in the figure, the proton concentration changes consistently with the current, which confirms that applying different external voltages along the x-axis direction of the element can adjust the proton concentration inside the a-axis direction of the single crystal sample and realize the memristive function of high-low resistance state switching. The proton concentration and the corresponding proton mobility are both excellent device standards.

[0094] Example 3, memristor function test of high-performance integrated circuit element.

[0095] The probe station is connected to an external DC source meter to perform IV cycle test along the x-axis direction of the prepared element, the x-axis first electrode 2 and the x-axis second electrode 4 (the a-axis direction of the single crystal sample). Figure 5 As shown in the figure, as the positive voltage increases, the structural distortion increases, protons are released through the spin-orbit charge coupling mechanism, the proton concentration in the structure is increased, and the resistance is reduced to a low resistance state; as the voltage decreases, the structural distortion is maintained, and the low resistance state remains unchanged. As the voltage becomes negative, the structural distortion weakens, protons are gradually recovered, the proton concentration is reduced, and the resistance increases to a high resistance state and remains unchanged, thereby achieving a standard non-volatile memristor function with a switching ratio of >10. Further persistence and tolerance tests were conducted, and the resistance state duration of the memristor was >10 3 s, number of cycles>10 2 Times, are all at a relatively excellent level.

[0096] Example 4: Testing of synaptic plasticity simulation using a memristor function of a high-performance integrated circuit element.

[0097] Based on the memristor function of high-performance integrated circuit elements, a pulse voltage test is performed along the x-axis direction of the element at the first x-axis electrode 2 and the second x-axis electrode 4 (a-axis direction of the single crystal sample) through an external DC source meter on the probe station to simulate the basic learning functions of neural synapses - memory function and forgetting function. Figure 6As shown, the first electrode 2 on the x-axis is used as the presynapse, and the second electrode 4 on the x-axis is used as the postsynapse. By continuously applying a 0.5 V pulse voltage with a pulse width of 5 ms to the presynapse to test the postsynaptic current, the long-term potentiation function (LTP, i.e., memory function) of the synapse can be simulated. By continuously applying a -0.5 V pulse voltage with a pulse width of 5 ms to test the postsynaptic current, the long-term inhibition function (LTD, i.e., forgetting function) of the synapse can be simulated. Further, by applying paired 0.5 V and -0.5 V pulse voltages to the presynapse to test the change of the postsynaptic current with the interval time of the paired pulse voltages (weight change), the advanced learning function of the synapse - pulse timing dependent plasticity (STDP) can be simulated. Since the memristor has volatile multi-gate controllability, a constant voltage is applied through the x-axis first electrode 2 and the x-axis second electrode 4, and the z-axis first electrode 5 and the z-axis second electrode 6, the y-axis first electrode 1 and the y-axis second electrode 3 are used as gates to regulate the conductance value between the x-axis first electrode 2 and the x-axis second electrode 4, thereby simulating a more complex neural synaptic function - heterosynaptic plasticity.

[0098] Example 5, inductor function test of high performance integrated circuit element.

[0099] like Figure 7 As shown in (a), the probe station is connected to an LCR tester to perform an inductor function test along the y-axis direction of the prepared component, along the y-axis first electrode 1 and the y-axis second electrode 3 (the b-axis direction of the single crystal sample). ac = 0.5 V, the complex impedance value shows a trend of first rising and then falling with the AC frequency, which is consistent with the complex impedance-frequency characteristics of the standard inductor, that is, it shows inductance characteristics before the resonance frequency and capacitance characteristics after the resonance frequency, which shows that the y-axis direction of the component has a standard inductance function. According to the relationship between inductance and the imaginary part of complex impedance, the relationship between the inductance value and frequency of the inductor can be obtained. Figure 7 As shown in (b), the inductor can have an inductance value of up to 10 3 H, resonant frequency ~15 kHz, inductance density ~10 5 H / mm 2 , which is an improvement of more than 8 orders of magnitude compared to the inductors widely used today.

[0100] Example 6, resistor function test of high performance integrated circuit element.

[0101] like Figure 8 As shown, an IV cycle test is performed along the y-axis direction of the prepared element along the y-axis first electrode 1 and the y-axis second electrode 3 (the b-axis direction of the single crystal sample) by connecting the probe station to an external DC source meter. Figure 8 As shown, in the DC voltage mode, the component y-axis direction can realize a standard linear resistance function.

[0102] Example 7, capacitor function test of high performance integrated circuit element.

[0103] Through the probe station connected to an LCR tester, the capacitor function test is performed along the z-axis direction of the prepared element, the z-axis first electrode 5 and the z-axis second electrode 6 (the c-axis direction of the single crystal sample). Fig. 9 As shown in (a) in the figure, the complex impedance decreases significantly with frequency, showing standard capacitance characteristics. The capacitor quality factor is stable above 50 as the frequency increases, as shown in Fig. 9 As shown in (b) in .

[0104] Based on the implementation of the above integrated circuit, the present invention further discloses a chip, which packages the above integrated circuit component structure as a part of the chip.

[0105] Based on the above chip, the present invention also discloses a computer device, including a processor, wherein the processor circuit includes at least one of the above chip.

[0106] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. A person with ordinary knowledge in the technical field to which the present invention belongs may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the claims.

[0107] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

Claims

1. An integrated circuit component integrating four basic passive component functions, characterized in that: It includes a silicon oxide insulating substrate, a plurality of bottom electrodes are arranged on the silicon oxide insulating substrate, a single crystal slice is arranged on the bottom electrodes, and a top electrode is arranged on the top of the single crystal slice, wherein the bottom electrode includes two pairs of metal electrodes arranged along the x-axis and y-axis directions of the silicon oxide insulating substrate respectively, and a metal electrode arranged at a 45-degree angle between the x-axis and the y-axis; wherein the single crystal slice has a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, a microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity properties; the bottom electrode at a 45-degree angle between the x-axis and the y-axis and the top electrode on the single crystal slice form a pair of metal electrodes in the z-axis direction, and different voltage conditions are applied between the metal electrode pairs in the x-axis, y-axis and z-axis directions respectively to realize the functions of four basic passive circuit elements.

2. The integrated circuit element according to claim 1, characterized in that: A DC voltage is applied between the two metal electrodes in the x-axis direction to realize the memristor function; an AC voltage is applied between the two metal electrodes in the y-axis direction to realize the proton inductor function; a DC voltage is applied between the two metal electrodes in the y-axis direction to realize the linear resistor function; an AC voltage is applied between the two metal electrodes in the z-axis direction to realize the capacitor function.

3. The integrated circuit element according to claim 2, characterized in that: Two pairs of mutually perpendicular electrodes in the x-axis and y-axis directions are parallel to the a-axis and b-axis of the single crystal slice respectively.

4. The integrated circuit element according to claim 1, characterized in that: The bottom electrode and the top electrode are both surface-grown metal electrodes with a thickness of 10 nm.

5. A method for designing an integrated circuit element according to any one of claims 1 to 4, characterized in that: The method comprises the following steps: Step 1, applying an AC voltage along the y-axis direction of the element to realize the function of a proton-type emergent inductor through the coaxial magnetoelectric coupling effect and the spin transfer torque; Step 2: Apply a DC voltage along the x-axis direction of the element to release or recycle protons through the spin-orbit charge coupling mechanism, regulate the proton concentration in the channel, change the resistance state, and realize the memristor function; Step 3, applying an AC voltage along the z-axis direction of the element, utilizing the inverse-axis magnetoelectric coupling characteristics and ferroelectric polarization characteristics that cannot generate inductance in the z-axis direction, and the interlayer force to suppress proton transport and avoid leakage current, thereby realizing the capacitor function; Step 4: Apply a DC voltage along the y-axis direction of the element to realize the linear resistor function.

6. The design method according to claim 5, characterized in that: The specific implementation process of step 1 is as follows: According to the emergent inductance theory formula, it can be known that the inductance value is proportional to the effective mass of the carriers. Protons with high effective mass are selected as the driving force for the local magnetic moment movement inside the single crystal thin film structure to increase the inductance value. According to the characteristic that the carrier spin-orbit coupling strength is inversely proportional to the effective mass of the carrier, the intrinsic spin-orbit coupling strength of the proton is ignored, and the coaxial magneto-electric coupling characteristics are used to change the coaxial effective magnetic field of the single crystal slice under the action of an external alternating electric field, so as to regulate the proton spin and achieve the simultaneous change of the proton spin and momentum, thus forming "effective spin-orbit coupling"; The spin of protons changes constantly during the movement, generating a spin transfer torque acting on the local magnetic moment, forming an equivalent perturbation magnetic field, driving the local magnetic moment to precess around the effective magnetic field direction of the single crystal thin film itself, superimposing the phenomenon of nutation; In the absence of proton flow, the local magnetic moment only precesses around the effective magnetic field, and the angle between the local magnetic moment and the effective magnetic field remains unchanged; when the proton flow passes through the local magnetic moment, assuming that the spin transfer torque and the perturbation magnetic field H g and the local magnetic moment M are perpendicular to each other; Different moments with the same and The local magnetic moment of M is placed in the same Bloch sphere, and the motion trajectory of M forms a conical structure with a changing solid angle; it is concluded that the Berry connection a ± The derivative with respect to time causes an induced electric field Under the action of the induced electric field, an electromotive force is induced, generating the required emergent inductance, where: is the angle between the local magnetic moment and the effective magnetic field, is the time rate of change of the angle between the local magnetic moment and the effective magnetic field, and e is the unit charge.

7. The design method according to claim 6, characterized in that: The motion of a proton is expressed as: Where p is the proton canonical momentum, m H is the effective mass of the proton, σ is the proton spin, J is the coupling constant, p α is the component of proton momentum, σ β is the component of proton spin, G αβ is the effective coupling factor of proton momentum and spin caused by magnetoelectric coupling, αβ is the coordinate subscript, representing xyz.

8. The design method according to claim 7, characterized in that: The local magnetic moment M, driven by protons with variable spin directions, undergoes continuous changes, which is expressed by the following formula: Where γ is the gyromagnetic ratio, H eff is the effective magnetic field, α is the Gilbert damping constant, H g is the perturbation magnetic field generated by the spin transfer torque.

9. A method for preparing an integrated circuit element according to any one of claims 1 to 4, characterized in that: The steps include: Step 1: grow a 10 nm thick metal electrode pattern as a bottom electrode on a silicon oxide wafer covering a mask by magnetron sputtering, and grow a 10 nm thick metal electrode pattern as a top electrode on a polyvinyl alcohol film covering a mask; Step 2, selecting a single crystal sheet with a layered structure, room temperature single-phase magnetoelectric coupling anisotropy, microscopic spin-orbit charge coupling mechanism, ferroelectric polarization characteristics and proton conductivity and transferring it to the surface of the polydimethylsiloxane film; Step 3, non-destructively bond the single crystal sheet on the surface of polydimethylsiloxane to the bottom electrode, so that the two pairs of metal electrodes in the x and y directions are parallel to the a-axis and b-axis directions of the single crystal sheet respectively, and a metal electrode arranged at a 45-degree angle between the x and y axes serves as the bottom electrode in the z direction; Step 4, applying a variable temperature to the single crystal slice to separate the polydimethylsiloxane film from the single crystal slice, so that the single crystal slice is closely attached to the bottom electrode; Step 5, transfer the polyvinyl alcohol film on which the top electrode is grown so that its back is bonded to the surface of the polydimethylsiloxane film, and adjust the top electrode on the surface of the polyvinyl alcohol film and the bottom electrode in the z direction under the single crystal slice to correspond in the vertical direction through the transfer platform, so that the top electrode on the surface of the polyvinyl alcohol film is bonded to the single crystal slice without loss, and form a pair of metal electrodes in the z-axis direction with the bottom electrode in the z direction of the single crystal slice; Step 6: Apply a changing temperature to the single crystal wafer to separate the polyvinyl alcohol film from the polydimethylsiloxane film attached to its back, and the separated polyvinyl alcohol film adheres to the surface of the silicon wafer, so that the polyvinyl alcohol film carrying the top electrode is closely attached to the single crystal wafer.

10. A chip, characterized in that: An integrated circuit element comprising any one of claims 1 to 4.

11. Computer equipment, characterized in that: Comprising a processor, wherein the processor circuit comprises at least one chip as claimed in claim 10.

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