Silicon carbide crystal deposition device

Abstract

The present invention belongs to the technical field of semiconductor equipment, and specifically relates to a silicon carbide crystal deposition device, comprising: a cylinder and a chassis; the chassis and the cylinder are sealed and cooperated to form a deposition space; a cover body with a curved surface structure is arranged in the cylinder, so that the curved surface structure is opposite to the center of a feed nozzle, and plays a role in rapidly diverging and diverting airflow; and the gradually smaller space between the bottom and the side wall of the curved surface structure is conducive to increasing the flow rate and backflow of the gas leaving the nozzle, so as to form an airflow that is rapidly transported downward, and the airflow in the cover body flows rapidly from top to bottom in a single direction, which is conducive to the mass transfer process of the deposited material, thereby improving the compactness of the deposited crystal; the space in the cover body is small, and the material can effectively contact with the surface of the internal electrode assembly, and the material is collected again through the air outlet holes on the cover body and blown to the electrode assembly outside the cover, which can also promote the material to fully and effectively contact with the electrode assembly outside the cover, and the material is subjected to two-stage contact and reaction, and the utilization rate is significantly improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor equipment, and in particular relates to a silicon carbide crystal deposition device. Background Art

[0002] The bell-jar reactor is a commonly used CVD deposition device, which is used for the growth of electronic grade polysilicon and silicon carbide crystals. Several carriers are arranged in the reactor, and several air inlets and outlets are arranged on the chassis. The raw gas enters the reaction furnace chamber through the air inlet, and gas phase reaction and deposition reaction occur in the furnace chamber.

[0003] The disadvantages of this method are also obvious. After the material enters from the feed port, it quickly diffuses in the furnace chamber. Most of the fresh material fails to effectively contact the carrier to undergo a deposition reaction, and only a small amount of material reaches the surface of the carrier, resulting in insufficient material utilization in the bell-jar reactor and waste of raw materials.

[0004] It should be noted that this part of the present invention only provides background technology related to the present invention and does not necessarily constitute prior art or known technology. Summary of the invention

[0005] The purpose of the present invention is to provide a silicon carbide crystal deposition device to overcome the technical problem of low raw material utilization rate of the existing deposition device.

[0006] In order to achieve the above-mentioned purpose, the silicon carbide crystal deposition device provided in the embodiment of the present invention comprises: a cylinder and a bottom plate; the bottom plate is sealed and matched with the bottom end of the cylinder to form a deposition space;

[0007] A first cover body is arranged in the deposition space, and the first cover body is arranged inverted at the center of the chassis, and electrode assemblies are arranged in the deposition space inside and outside the first cover body; a feed nozzle penetrating the chassis is arranged in the center of the chassis, and the outlet of the feed nozzle extends to the top of the first cover body, and the inlet of the feed nozzle is exposed on the side of the chassis away from the cylinder body, which is used to be connected with the raw material supply unit; the raw material supply unit delivers the carrier gas mixed with the reaction raw materials into the deposition space; the top of the first cover body is convex toward one side of the chassis to form a curved surface structure, which is used to divert, accelerate the flow rate and reflux the carrier gas flowing out of the outlet of the feed nozzle; the side wall of the first cover body is provided with a plurality of air outlets, the air outlets face the electrode assembly outside the first cover body, and the air outlets are arranged obliquely downward from the inner side of the first cover body to the outer side of the first cover body.

[0008] Optionally, the side wall of the first cover body is further provided with a reinforcement hole, and the reinforcement hole is located above the air outlet hole, and the air outlet angle of the reinforcement hole corresponds to the corner position of the beam of the electrode assembly at the periphery of the first cover body.

[0009] Optionally, the diameter of the enhancement hole is greater than the diameter of the air outlet hole; and / or, the enhancement hole and the air outlet hole are circular holes or strip holes.

[0010] Optionally, the curved surface structure is in the shape of an inverted cone or a hemisphere.

[0011] Optionally, the outlet of the feed nozzle is directly opposite to the lowest point of the curved surface structure, and the distance between the outlet of the feed nozzle and the lowest point of the curved surface structure is 1 cm to 5 cm.

[0012] Optionally, the silicon carbide crystal deposition device also includes: a second cover body; the second cover body is arranged on the periphery of the first cover body and fixed on the chassis; the top of the second cover body is an open structure; a plurality of electrode assemblies are arranged between the second cover body and the first cover body; a plurality of first guide holes are arranged on the side wall of the second cover body, and the first guide holes are arranged obliquely upward from the inner side of the second cover body to the outer side of the second cover body.

[0013] Optionally, the distribution positions of the first air guide holes match the projection positions of the air outlet holes and the enhancement holes on the side wall of the second cover body along the corresponding air outlet directions.

[0014] Optionally, the silicon carbide crystal deposition device also includes: a third cover body; the third cover body is arranged on the periphery of the first cover body and fixed on the chassis; the top of the third cover body is a closed structure; a plurality of electrode assemblies are arranged between the third cover body and the first cover body; a plurality of second guide holes are arranged on the side wall of the third cover body, and the second guide holes are arranged obliquely upward from the inner side of the third cover body to the outer side of the third cover body.

[0015] Optionally, a first deposition subspace is formed in the first cover body, and a second deposition subspace is formed in the sealed space between the third cover body and the first cover body; the top of the third cover body is a movable partition, and the movable partition is sealed and surrounded by the periphery of the first cover body, and the volume of the second deposition subspace is adjusted by adjusting the movable partition.

[0016] Optionally, the silicon carbide crystal deposition device further includes: a temperature regulating device; the temperature regulating device is arranged on the top of the third cover body, and is used to heat the carrier gas on the top of the third cover body.

[0017] The embodiments of the present application have at least the following technical effects:

[0018] The silicon carbide crystal deposition device provided by the embodiment of the present invention is provided with a cover body with a curved surface structure, and the curved surface structure is opposite to the center of the feed nozzle, which plays a role in rapidly diverging the diverted airflow; the gradually smaller space between the bottom and the side wall of the curved surface structure is conducive to increasing the flow rate and backflow of the gas leaving the nozzle, so as to form a rapidly downwardly transported airflow, and the airflow in the cover body flows rapidly from top to bottom in a single direction, which is conducive to the mass transfer process of the deposited material, thereby improving the density of the deposited crystal; the space in the cover body is small, the material can effectively contact the surface of the internal electrode assembly, and the material is collected again through the air outlet holes on the cover body and blown to the electrode assembly outside the cover body, which can also promote the material The material is in full and effective contact with the electrode assembly outside the cover, and the material undergoes two-stage contact and reaction, and the utilization rate is significantly improved. In addition, the gas in the cover is first preheated by raising the nozzle to increase the reaction activity, and then quickly flows through the electrode assembly in the cover. The material that has not reacted completely is reheated by the electrode assembly in the cover, and its reaction activity is higher. The gas is distributed through the cover and reaches the surface of the electrode assembly outside the cover. At this time, the gas temperature is high and the reaction activity is strong, and it can quickly participate in the reaction on the surface of the electrode assembly, thereby accelerating the growth rate of the external electrode assembly. At the same time, the fast-flowing airflow can quickly take away the reaction products, which is beneficial to improving the density of the crystal deposited on the surface of the electrode assembly. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic diagram of the overall structure of a silicon carbide crystal deposition device provided in an embodiment of the present invention;

[0021] Figure 2 A schematic diagram of the overall structure of another silicon carbide crystal deposition device provided by an embodiment of the present invention;

[0022] Figure 3 A schematic diagram of the overall structure of another silicon carbide crystal deposition device provided in an embodiment of the present invention;

[0023] Figure 4 A schematic diagram of the overall structure of another silicon carbide crystal deposition device provided in an embodiment of the present invention.

[0024] Reference numerals:

[0025] 1-cylinder; 101-deposition space; 2-chassis; 3-first cover; 301-curved structure; 302-air outlet; 303-enhancement hole; 304-first deposition subspace; 4-electrode assembly; 5-feed nozzle; 6-second cover; 601-first guide hole; 7-third cover; 701-second guide hole; 702-movable partition; 703-second deposition subspace; 8-temperature regulating device. DETAILED DESCRIPTION

[0026] The technical solution of the present application will be described clearly and completely below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0027] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0028] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0029] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0030] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0031] like Figure 1 As shown, an embodiment of the present invention provides a silicon carbide crystal deposition device, comprising: a cylinder 1 and a bottom plate 2; the bottom plate 2 and the bottom end of the cylinder 1 are sealed to form a sealed deposition space 101. Among them, a first cover 3 is arranged in the deposition space 101, and the first cover 3 is inverted and arranged in the center of the bottom plate 2, which is equivalent to a small space. The electrode assembly 4 is arranged in the first cover 3 and in the deposition space 101 outside the first cover 3. After the reaction gas contacts the energized electrode assembly 4, it will adhere to its surface and deposit to form crystals.

[0032] Specifically, a feed nozzle 5 is provided in the center of the chassis 2 and is penetrated on the chassis 2. The outlet of the feed nozzle 5 extends to the top of the first cover 3, and the inlet of the feed nozzle 5 is exposed on the side of the chassis 2 away from the cylinder 1, for connecting with the raw material supply unit. The raw material supply unit delivers the carrier gas mixed with the reaction raw materials into the deposition space 101.

[0033] Furthermore, the top of the first cover body 3 is convex toward one side of the chassis 2 to form a curved surface structure 301, and the curved surface structure 301 is located above the outlet of the feed nozzle 5. The curved surface structure 301 is used to divert, accelerate the flow rate and reflux the carrier gas flowing out of the outlet of the feed nozzle 5, that is, to divert the flow through the curved surface protrusion, and because the bottom of the curved surface structure 301 and the side wall of the first cover body 3 form a gradually smaller space, it is conducive to increasing the airflow, and quickly ejecting from the air outlet 302 and the enhancement hole 303, which can improve the penetration of the gas ejected downward. Among them, the formation of the curved surface structure 301 can be that only the top of the first cover body 3 is convex toward one side of the chassis 2 (the upper surface of the first cover body 3 is a plane), or the top of the first cover body 3 is convex as a whole toward the chassis 2 (the upper surface of the first cover body 3 is concave downward).

[0034] The side wall of the first cover body 3 is provided with a plurality of air outlet holes 302, and the air outlet holes 302 face the electrode assembly 4 outside the first cover body 3, so that the air flow ejected from the air outlet holes 302 can directly contact the electrode assembly 4, and the air outlet holes 302 are arranged obliquely downward from the inside of the first cover body 3 to the outside of the first cover body 3, which is equivalent to being arranged along the air flow direction, which is beneficial to increasing the outflow speed of the gas, thereby quickly blowing toward the electrode assembly 4 outside the cover body, providing a high-speed fresh airflow for the surface of the electrode assembly 4 outside the cover body, which is beneficial to the material renewal on the surface of the electrode assembly 4.

[0035] The silicon carbide crystal deposition device provided in the present embodiment is provided with a cover body having a curved surface structure 301, and the curved surface structure 301 is opposite to the center of the feed nozzle 5, so as to play the role of rapidly diverging the diverted airflow; the gradually smaller space between the bottom and the side wall of the curved surface structure 301 is conducive to increasing the flow rate and backflow of the gas leaving the nozzle, so as to form a rapidly downwardly transported airflow, and the airflow in the cover body flows rapidly from top to bottom in a single direction, which is conducive to the mass transfer process of the deposited material, thereby improving the density of the deposited crystal; the space in the cover body is small, and the material can effectively contact the surface of the internal electrode assembly 4, and the material is collected again through the air outlet 302 on the cover body and blown to the electrode assembly 4 outside the cover body, which can also The material is promoted to be in full and effective contact with the electrode assembly 4 outside the cover. The material undergoes two-stage contact and reaction, and the utilization rate is significantly improved. In addition, the gas in the cover is first preheated by raising the nozzle to increase the reaction activity, and then quickly flows through the electrode assembly 4 in the cover. The material that has not reacted completely is reheated by the electrode assembly 4 in the cover, and its reaction activity is higher. The gas is distributed through the cover and reaches the surface of the electrode assembly 4 outside the cover. At this time, the gas temperature is high and the reaction activity is strong. It can quickly participate in the reaction on the surface of the electrode assembly 4, thereby accelerating the growth rate of the external electrode assembly 4. At the same time, the fast-flowing airflow can quickly take away the reaction products, which is beneficial to improving the density of the crystal deposited on the surface of the electrode assembly 4.

[0036] Alternatively, if Figure 1 As shown, the side wall of the first cover body 3 is also provided with enhancement holes 303, and the enhancement holes 303 are located above the air outlet holes 302. Some of the enhancement holes 303 are arranged in the space where the bottom of the curved structure 301 and the side wall are gradually reduced. Since the air outlet angle of the enhancement holes 303 corresponds to the crossbeam corner position of the electrode assembly 4 outside the first cover body 3, the raw gas is accelerated and flows out through the space where the curved structure 301 and the side wall are gradually reduced, which is beneficial for the raw gas to spray downward, and is more beneficial for replenishing the raw gas to the outer crossbeam corner area away from the side wall of the first cover body 3.

[0037] It is understandable that in places where growth is slow, such as the corners of the beam, the thickness of the deposited crystal is thin, and there is a large difference in the thickness of the crystal deposited in other parts, which will increase local stress and cause defects such as cracks in the crystal, which is not conducive to improving the quality of the crystal. Therefore, this embodiment arranges enhanced holes 303 covering the corners of the beam on the first cover body 3, thereby increasing the crystal deposition speed in the corner area and further improving the consistency of the deposited crystal thickness.

[0038] Optionally, the diameter of the enhancement hole 303 is larger than the diameter of the outlet hole 302, that is, the size of the enhancement hole 303 can be appropriately enlarged to provide more fresh materials for the low temperature position, and other positions such as the straight line position can be appropriately reduced to ensure the consistency of the deposited crystal thickness.

[0039] Optionally, if the enhancement hole 303 and the air outlet hole 302 are both circular holes, the aperture at the corner and root of the beam is 10 mm, and the aperture at other positions is 5 mm; or, if the enhancement hole 303 and the air outlet hole 302 are strip holes, the strip holes at the corners of the beam are 2 mm × 10 mm, and the aperture at other positions is 2 mm × 5 mm, so that the growth rate of the deposited crystals in slow-growing places such as the corners and roots of the beam is closer to the growth rate of the crystals in other parts, reducing the defects of cracks in the crystals caused by local stress, which is beneficial to improving the quality of the crystals.

[0040] Optionally, the shape of the curved structure 301 is an inverted cone or a hemisphere. The surface of the inverted cone or hemisphere curved structure 301 is relatively smooth, and the heat on the surface can be reflected to the lower part, thereby increasing the local gas temperature, and then increasing the driving force for the gas to be transported downward, which is beneficial to improving production efficiency.

[0041] Alternatively, if Figure 1 As shown, the outlet of the feed nozzle 5 is facing the lowest point of the curved structure 301, and the distance between the outlet of the feed nozzle 5 and the lowest point of the curved structure 301 is 1cm~5cm. If the distance is too small, it will affect, and if the distance is too large, it will affect the downward flow rate of the gas, thereby reducing the speed at which the gas flows out of the outlet 302, which is not conducive to the deposition of crystals.

[0042] In another embodiment, Figure 2 As shown, the silicon carbide crystal deposition device provided in the embodiment of the present invention further includes: a second cover body 6; the second cover body 6 is arranged on the periphery of the first cover body 3 and fixed on the chassis 2; the top of the second cover body 6 is an open structure.

[0043] Specifically, a plurality of electrode assemblies 4 are arranged between the second cover body 6 and the first cover body 3; a plurality of first flow guide holes 601 are arranged on the side wall of the second cover body 6, and the first flow guide holes 601 are arranged upwardly from the inner side of the second cover body 6 to the outer side of the second cover body 6. The gas is guided by arranging a multi-stage cover body, which is conducive to increasing the flow path of the gas and improving the gas utilization rate. At the same time, since the upward first flow guide holes 601 are arranged at the second cover body 6, and the gas outlet is arranged on the chassis 2 outside the second cover body 6, the gas outlet 302 of the first cover body 3 sprays the raw material gas flow downward, and the first flow guide holes 601 on the second cover body 6 spray the raw material gas flow upward, forming opposite gas flow directions, which is conducive to extending the flow path of the gas in the entire deposition space 101, and is conducive to increasing the residence time of the gas, thereby improving the gas utilization rate.

[0044] Optionally, in order to facilitate the carrier gas to flow out from the inside to the outside of the second cover body 6, the distribution position of the first guide hole 601 matches the projection position of the outlet hole 302 and the enhancement hole 303 on the side wall of the second cover body 6 along the corresponding outlet direction, which is more conducive to the flow of airflow, thereby improving the crystal deposition efficiency.

[0045] In another embodiment, Figure 3 As shown, the silicon carbide crystal deposition device provided in the embodiment of the present invention includes, in addition to the first cover body 3 of the aforementioned embodiment, a third cover body 7; the third cover body 7 is arranged on the periphery of the first cover body 3 and fixed on the chassis 2; the top of the third cover body 7 is a closed structure.

[0046] Specifically, a plurality of electrode assemblies 4 are arranged between the third cover body 7 and the first cover body 3; a plurality of second guide holes 701 are arranged on the side wall of the third cover body 7, and the second guide holes 701 are arranged obliquely upward from the inner side of the third cover body 7 to the outer side of the third cover body 7, so that the airflow flows downward from the air outlet 302 of the first cover body 3, and then flows upward through the second guide holes 701 on the third cover body 7 to flow out of the entire deposition space 101.

[0047] The silicon carbide crystal deposition device provided in the embodiment of the present invention is beneficial to reducing gas escape by setting a third cover body 7 with a top seal, forming relatively independent multi-level spaces, thereby reducing the difference in crystal growth in the multi-level independent spaces; at the same time, by reducing the deposition space 101 outside the first cover body 3, the division of the reaction space at each level is made more refined, so that the growth rate of the silicon carbide crystal rod remains similar, and the crystal quality is further improved.

[0048] Alternatively, if Figure 4 As shown, a first deposition subspace 304 is formed in the first cover body 3, and a second deposition subspace 703 is formed in a sealed space between the third cover body 7 and the first cover body 3. The top of the third cover body 7 is a movable baffle 702, which is sealed around the periphery of the first cover body 3 and is sealed with the inner side wall of the third cover body 7, so that the volume of the second deposition subspace 703 can be adjusted by adjusting the height of the movable baffle 702, thereby achieving different volume ratios of the first deposition subspace 304 and the second deposition subspace 703, and further achieving consistency of crystal deposition speeds of the first deposition subspace 304 and the second deposition subspace 703.

[0049] The silicon carbide crystal deposition device provided in this embodiment adjusts the space of the cover body by changing the position of the movable partition 702. Through the adjustment of the above-mentioned space division, the growth rate of the silicon carbide crystal rod can be kept similar, which is beneficial to improving the crystal quality.

[0050] Alternatively, if Figure 3As shown, the silicon carbide crystal deposition device also includes: a temperature regulating device 8; the temperature regulating device 8 is arranged on the top of the third cover body 7, and is used to heat the carrier gas on the top of the third cover body 7, which can increase the upper temperature, thereby enhancing the gas supplementary heat, and then improving the driving force for downward transportation.

[0051] The silicon carbide crystal deposition device provided by the embodiment of the present invention guides the carrier gas by setting a multi-stage cover body, thereby increasing the flow path of the gas, which is beneficial to improving the gas utilization rate; at the same time, an upward guide hole is set at the secondary cover body, and the upward raw material gas flow is sprayed through the gas outlet, which is opposite to the gas flow direction out of the internal primary cover body, which is beneficial to further extend the gas flow path, increase the gas residence time, and increase the gas utilization rate; further, through the gradually decreasing space between the bottom and the side wall of the inverted cone or hemispherical curved surface structure 301, it is beneficial to increase the ejection speed from the outlet hole and the enhancement hole, which can improve the penetration of the gas sprayed downward, thereby facilitating the outer cross beam corner. Fresh materials are added to slow-growing places such as the corners and roots of the beam, so that the crystal growth rate in slow-growing places such as the corners and roots of the beam is closer to the crystal growth rate in other parts, reducing local stress that causes defects such as cracks in the crystal, which is beneficial to further improve the crystal quality; in addition, the airflow quickly ejected from the air outlet 302 and the enhancement hole 303 is beneficial to forming an air curtain covering the upper part of the area between the multi-stage cover bodies, which is beneficial to the replenishment of fresh gas, as well as increasing the gas turbulence in the space, extending the gas residence time, improving the gas utilization rate, reducing the difference between the deposition rate in the external space and the deposition growth in the internal space, and improving the crystal deposition quality of silicon carbide while efficiently utilizing the raw materials.

[0052] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances. In the description of this specification, specific features, structures, materials, or characteristics can be combined in a suitable manner in any one or more embodiments or examples.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A silicon carbide crystal deposition device, characterized in that: include: A cylinder and a bottom plate; the bottom plate is sealed and matched with the bottom end of the cylinder to form a deposition space; A first cover body is arranged in the deposition space, the first cover body is arranged inverted in the center of the chassis, and electrode assemblies are arranged in the deposition space inside the first cover body and outside the first cover body; A feed nozzle is provided in the center of the chassis, the outlet of the feed nozzle extends to the top of the first cover, and the inlet of the feed nozzle is exposed on the side of the chassis away from the cylinder, and is used to be connected with a raw material supply unit; the raw material supply unit delivers a carrier gas mixed with reaction raw materials into the deposition space; The top of the first cover body is convex toward one side of the bottom plate to form a curved surface structure, and the curved surface structure is used to split, accelerate and reflux the carrier gas flowing out of the outlet of the feed nozzle; the side wall of the first cover body is provided with a plurality of gas outlet holes, the gas outlet holes are directed toward the electrode assembly outside the first cover body, and the gas outlet holes are arranged obliquely downward from the inner side of the first cover body to the outer side of the first cover body; The side wall of the first cover body is further provided with a reinforcement hole, the reinforcement hole is located above the air outlet hole, and the air outlet angle of the reinforcement hole corresponds to the crossbeam corner position of the electrode assembly outside the first cover body; the shape of the curved surface structure is an inverted cone or a hemispherical shape, the outlet of the feed nozzle is facing the lowest point of the curved surface structure, and the distance between the outlet of the feed nozzle and the lowest point of the curved surface structure is 1 cm to 5 cm; The deposition space is further provided with: a second cover body; the second cover body is arranged on the periphery of the first cover body and fixed on the chassis; the top of the second cover body is an open structure; a plurality of the electrode assemblies are arranged between the second cover body and the first cover body; a plurality of first guide holes are arranged on the side wall of the second cover body, and the first guide holes are arranged upwardly and obliquely from the inner side of the second cover body to the outer side of the second cover body; Alternatively, the deposition space is further provided with: a third cover body; the third cover body is arranged on the periphery of the first cover body and fixed on the chassis; the top of the third cover body is a closed structure; a plurality of electrode assemblies are arranged between the third cover body and the first cover body; a plurality of second guide holes are arranged on the side wall of the third cover body, and the second guide holes are arranged obliquely upward from the inner side of the third cover body to the outer side of the third cover body.

2. The silicon carbide crystal deposition device according to claim 1, characterized in that: The diameter of the enhancement hole is greater than the diameter of the air outlet hole; And / or, the enhancement holes and the air outlet holes are circular holes or strip holes.

3. The silicon carbide crystal deposition device according to claim 1, characterized in that: The distribution positions of the first air guide holes match the projection positions of the air outlet holes and the enhancement holes on the side wall of the second cover body along the corresponding air outlet directions.

4. The silicon carbide crystal deposition device according to claim 1, characterized in that: A first deposition subspace is formed in the first cover body, and a second deposition subspace is formed in the sealed space between the third cover body and the first cover body; The top of the third cover body is a movable baffle, and the movable baffle is sealed and surrounds the periphery of the first cover body. The volume of the second deposition subspace can be adjusted by adjusting the movable baffle.

5. The silicon carbide crystal deposition device according to claim 4, characterized in that: Also includes: A temperature regulating device; the temperature regulating device is arranged on the top of the third cover body and is used to heat the carrier gas on the top of the third cover body.

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