Staged temperature control method, device and system for high-purity gas

Abstract

The invention discloses a staged temperature control method, a staged temperature control device and a staged temperature control system for high-purity gas, relates to the technical field of temperature control in high-purity gas supply equipment, and solves the problems that in the prior art, PID heating is delayed, so that the temperature is increased violently or equipment is damaged, or the heating effect cannot reach the target. The method comprises the following steps: calculating a difference value between an actual temperature and a first target temperature; judging a temperature control mode according to the difference value, and determining a stage number and a stage temperature value of temperature control according to the difference value; and adjusting the output power of the corresponding temperature control equipment according to the stage number and the stage temperature value so as to perform temperature control on the gas to be treated in a stage manner. By using a staged heating or refrigerating mode, when the difference between the target temperature and the actual temperature is large, the situation that the temperature is excessively high due to PID heating characteristics, continuous heating or temperature overshoot is caused is avoided, quick response to temperature changes is achieved, and temperature fluctuation is effectively reduced.

Description

Technical Field

[0001] The present application relates to the technical field of temperature control in high-purity gas supply equipment, and in particular to a staged temperature control method, device and system for high-purity gas. Background Art

[0002] In the semiconductor manufacturing process, strict requirements are placed on the supply of high-purity gases, and temperature fluctuations may lead to product quality problems during the production process. Although the PID control method commonly used in the prior art can achieve temperature control, it has problems such as slow response speed and large temperature fluctuations when the temperature changes greatly, and cannot meet the temperature stability requirements of high-purity gas supply equipment. Summary of the invention

[0003] The purpose of this application is to overcome the problems in the prior art that the PID heating delay causes a sharp temperature increase or equipment damage, or the heating effect does not achieve the target, and to provide a staged temperature control method, device and system for high-purity gas.

[0004] In a first aspect, a staged temperature control method for high-purity gas is provided, comprising:

[0005] Acquiring the actual temperature of the gas to be processed and the first target temperature;

[0006] calculating a difference between the actual temperature and the first target temperature;

[0007] Determining the temperature control mode according to the difference, and determining the number of temperature control stages and stage temperature values ​​according to the difference;

[0008] The output power of the corresponding temperature control device is adjusted according to the number of stages and the stage temperature value to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches the first target temperature.

[0009] In some possible implementations, the temperature control method includes heating and cooling, so that the gas to be processed can be heated and cooled.

[0010] In some possible implementations, the user determines the number of temperature control stages and the stage temperature values ​​based on the difference. If the difference between the first target temperature and the actual temperature of the gas to be treated is a positive number, the temperature control method is heating, and the corresponding temperature control device is a heating device; if the difference between the first target temperature and the actual temperature of the gas to be treated is a negative number, the temperature control method is cooling, and the corresponding temperature control device is a cooling device, so that the temperature control method can be judged based on the first target temperature and the actual temperature of the gas to be treated.

[0011] In some possible implementations, in the process of staged temperature control of the gas to be treated, the real-time temperature of the gas to be treated is obtained, and the output power of the corresponding temperature control equipment is dynamically adjusted according to the change of the real-time temperature. By monitoring the real-time temperature of the gas to be treated and dynamically adjusting the output power of the corresponding temperature control equipment, not only the safe operation of the equipment and products is ensured and the production risks are reduced, but also the corresponding temperature control equipment can be reduced, thereby achieving a greater energy-saving purpose.

[0012] In some possible implementations, adjusting the output power of the corresponding temperature control device according to the number of stages and the stage temperature value to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches the first target temperature specifically includes:

[0013] S401, adding the actual temperature of the gas to be treated to the stage temperature value as the second target temperature;

[0014] S402, determining whether the second target temperature is greater than the first target temperature;

[0015] If the judgment result is no, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be processed and the stage temperature value, so as to heat the gas to be processed to the second target temperature and repeat step S401;

[0016] If the judgment result is yes, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be treated and the difference between the first target temperature and the actual temperature of the gas to be treated, so as to heat the gas to be treated to the first target temperature.

[0017] In a second aspect, a staged temperature control device for high-purity gas is provided, comprising:

[0018] An acquisition module, used for acquiring the actual temperature of the gas to be processed and the first target temperature;

[0019] A calculation module, used for calculating the difference between the actual temperature and the first target temperature;

[0020] A judging module, used for judging the temperature control mode according to the difference, and determining the number of temperature control stages and stage temperature values ​​according to the difference;

[0021] The temperature control module is used to adjust the output power of the corresponding temperature control device according to the number of stages and the stage temperature value to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches a first target temperature.

[0022] In a third aspect, a staged temperature control system for high-purity gas is provided, comprising:

[0023] A control module, used to implement the method according to the first aspect above;

[0024] A temperature detection module, used to detect the temperature of the gas to be processed;

[0025] Temperature control equipment, including heating equipment and cooling equipment;

[0026] Heating equipment, used for heating the gas to be treated;

[0027] Refrigeration equipment is used to cool the gas to be processed.

[0028] In a fourth aspect, a computer program product comprising instructions is provided, which, when executed on a computer, enables the computer to execute the method described in the first aspect.

[0029] In a fifth aspect, a computer-readable storage medium is provided, wherein the computer-readable medium stores a program code for execution by a device, wherein the program code includes steps for executing the method in any one of the implementations of the first aspect described above.

[0030] In a sixth aspect, an electronic device is provided, comprising a processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein the program or instruction, when executed by the processor, implements a method as in any one of the implementations in the first aspect above.

[0031] The present application has the following beneficial effects: by using a staged heating or cooling method, when the target temperature and the actual temperature differ greatly, continuous heating or excessive temperature surge will not occur due to the PID heating characteristics, thereby achieving rapid response to temperature changes and effectively reducing temperature fluctuations. In addition, through intelligent control algorithms and real-time data feedback, precise control of the temperature of high-purity gases is achieved, the stability of the system is improved, and production efficiency and product quality are indirectly improved. Secondly, the heating and cooling process design of the present application can more accurately control the power of the corresponding temperature control equipment, effectively reducing the excessive power consumption of the corresponding temperature control equipment, thereby reducing energy consumption in the temperature control process. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application.

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 is a flow chart of the staged temperature control method of high-purity gas in Example 1 of the present application;

[0035] Figure 2 It is a structural block diagram of a staged temperature control device for high-purity gas in Example 2 of the present application;

[0036] Figure 3 This is a structural block diagram of a staged temperature control system for high-purity gas in Example 2 of the present application;

[0037] Figure 4 It is a schematic diagram of the internal structure of the electronic device of Example 6 of the present application.

[0038] Reference numerals:

[0039] 100, acquisition module; 200, calculation module; 300, judgment module; 400, temperature control module; 500, control module; 600, temperature detection module; 700, temperature control equipment; 701, heating equipment; 702, cooling equipment. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] Example 1

[0042] A staged temperature control method for high-purity gas involved in Example 1 of the present application includes: obtaining the actual temperature of the gas to be treated and a first target temperature; calculating the difference between the actual temperature and the first target temperature; judging the temperature control method according to the difference, and determining the number of stages and stage temperature values ​​of the temperature control according to the difference; adjusting the output power of the corresponding temperature control equipment according to the number of stages and the stage temperature values ​​to perform temperature control on the gas to be treated in stages until the temperature of the gas to be treated reaches the first target temperature. By using a staged heating or cooling method, when the target temperature and the actual temperature differ greatly, the method will not continue to heat or cause excessive temperature rise due to the PID heating characteristics, thereby achieving a rapid response to temperature changes and effectively reducing temperature fluctuations.

[0043] Specifically, Figure 1 A flow chart of a staged temperature control method for high purity gas in Example 1 of the present application is shown, comprising:

[0044] S100, obtaining the actual temperature of the gas to be processed and the first target temperature;

[0045] Specifically, the actual temperature of the gas to be treated is detected in real time using temperature sensors and other equipment, that is, the actual temperature of the gas to be treated is obtained from temperature sensors and other equipment. For example, the actual temperature of the gas to be treated obtained from the temperature sensor is 20°C, and the first target temperature is set by the user according to demand, wherein the first target temperature is the final temperature of the gas to be treated. For example, if the gas to be treated needs to be heated to 35°C, the first target temperature is 35°C.

[0046] S200, calculating the difference between the actual temperature and the first target temperature;

[0047] In this embodiment, taking the actual temperature of the gas to be treated as 20°C and the first target temperature as 35°C as an example, the difference between the actual temperature and the first target temperature is: 20°C-35°C=-15°C.

[0048] S300, judging a temperature control mode according to the difference, wherein the temperature control mode includes heating and cooling, and determining the number of temperature control stages and stage temperature values ​​according to the difference;

[0049] It should be noted that since the first target temperature is 35°C, if the temperature of the treated gas at 20°C is to be changed to 35°C, it is necessary to use a heating device to heat the treated gas. That is, it can be seen from step S200 that the difference between the actual temperature and the first target temperature is -15°C. Since the difference is a negative number, the treated gas needs to be heated. Similarly, if the difference between the actual temperature and the first target temperature is a positive value, the treated gas needs to be cooled (i.e., refrigerated).

[0050] In addition, it can be known from step S200 that the difference between the actual temperature and the first target temperature is -15°C. The user can customize the number of temperature control stages and stage temperature values ​​according to the difference. For example: first set the number of stages to 5, then the stage temperature value is: 15°C / 5=3°C. Of course, you can also set the stage temperature value to 3°C first, then the number of stages is: 15°C / 3°C=5.

[0051] S400, adjusting the output power of the corresponding temperature control device according to the number of stages and the stage temperature value to perform temperature control on the gas to be treated in stages until the temperature of the gas to be treated reaches a first target temperature, specifically comprising the following steps:

[0052] S401, adding the actual temperature of the gas to be treated to the stage temperature value as the second target temperature;

[0053] S402, determining whether the second target temperature is greater than the first target temperature;

[0054] If the judgment result is no, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be processed and the stage temperature value, so as to heat the gas to be processed to the second target temperature and repeat step S401;

[0055] If the judgment result is yes, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be treated and the difference between the first target temperature and the actual temperature of the gas to be treated, so as to heat the gas to be treated to the first target temperature.

[0056] Exemplarily, from the above steps S200 and S300, it can be known that the actual temperature of the gas to be treated is 20°C, the first target temperature is 35°C, the difference is -15°C, the number of stages is 5, and the stage temperature value is 3°C. First, 20°C+3°C=23°C is used as the second target temperature of the first stage. Since the second target temperature of 23°C is less than the first target temperature of 35°C, the second target temperature is used as the stage target temperature of the first stage. According to the power demand for heating the 20°C gas to be treated to 23°C, the heating equipment is controlled to heat with the first output power. When the actual temperature of the gas to be treated rises to 23°C, it enters the second heating stage. 23°C+3°C=26°C is used as the second target temperature of the second stage. Since the second target temperature of 26°C is less than the first target temperature of 35°C, the second target temperature is used as the stage target temperature of the second stage. According to the power demand for heating the treated gas at 23°C to 26°C, the heating equipment is controlled to generate heat with a second output power, wherein the second output power is greater than or equal to the first output power, so as to maintain the temperature rise of the treated gas basically unchanged, thereby heating the treated gas to 26°C. Similarly, the treated gas can be gradually heated from 20°C to 35°C in a staged heating manner. The staged control method is adopted to achieve rapid response to temperature changes and effectively reduce temperature fluctuations. Secondly, through intelligent control algorithms and real-time data feedback, precise control of the high-purity gas temperature is achieved, the stability of the system is improved, and the production efficiency and product quality are indirectly improved. This embodiment has the advantages of rapid response, precise control, energy saving and environmental protection, stability and reliability, etc. It is suitable for high-purity gas supply equipment in the fields of semiconductor manufacturing and has broad application prospects and market value.

[0057] It should be noted that in the process of staged temperature control for the gas to be treated, the real-time temperature of the gas to be treated is obtained in real time, and the output power of the corresponding temperature control equipment is dynamically adjusted according to the change of the real-time temperature. For example: in the staged heating process, the temperature rise of the gas to be treated is basically maintained at 0.1°C / second. At a certain point in time, the temperature rise suddenly changes to 0.3°C / second, then the output power of the heating equipment is appropriately reduced to adjust the temperature rise to around 0.1°C / second to prevent the temperature control of the gas to be treated from being inaccurate due to excessive temperature rise of the gas to be treated. Secondly, reducing the output power of the heating equipment can avoid excessive heat generation to a certain extent, thereby reducing energy consumption and meeting the requirements of energy conservation and environmental protection. At the same time, by introducing real-time temperature monitoring safety measures, the safe operation of equipment and products is ensured and production risks are reduced.

[0058] Example 2

[0059] like Figure 2 As shown, a staged temperature control device for high-purity gas according to Embodiment 2 of the present application comprises:

[0060] An acquisition module 100 is used to acquire the actual temperature of the gas to be processed and the first target temperature;

[0061] A calculation module 200, configured to calculate a difference between an actual temperature and a first target temperature;

[0062] A judging module 300 is used to judge the temperature control mode according to the difference, and determine the number of temperature control stages and stage temperature values ​​according to the difference;

[0063] The temperature control module 400 is used to adjust the output power of the corresponding temperature control device according to the number of stages and the stage temperature value to control the temperature of the gas to be processed in stages until the temperature of the gas to be processed reaches the first target temperature.

[0064] It should be noted that other specific implementations of the staged temperature control device for high-purity gas in this embodiment can refer to the specific implementations of the staged temperature control method for high-purity gas mentioned above, and will not be described again here to avoid redundancy.

[0065] Example 3

[0066] like Figure 3 As shown, a staged temperature control system for high-purity gas involved in Example 3 of the present application includes:

[0067] A control module 500, configured to implement the method in any one of the implementation modes in Embodiment 1;

[0068] The temperature detection module 600 is used to detect the temperature of the gas to be processed;

[0069] Temperature control equipment 700, the temperature control equipment includes a heating device 701 and a cooling device 702;

[0070] A heating device 701 is used to heat the gas to be processed;

[0071] The refrigeration equipment 702 is used to cool the gas to be processed.

[0072] It should be noted that the temperature detection module 600, the heating device 701 and the refrigeration device 702 are all electrically connected to the control module 500, so that the temperature information of the gas to be treated detected by the temperature detection module 600 can be transmitted to the control module 500 in real time. In addition, the control module 500 can control the operation of the heating device 701 and the refrigeration device 702 and the output power control through instructions, thereby controlling the corresponding temperature control device 700 to perform stage-by-stage temperature control on the gas to be treated according to the implementation method in Example 1, wherein the gas to be treated is high-purity gas, and of course it can also be other gases other than high-purity gas. For other specific implementation methods of the stage-by-stage temperature control device for high-purity gas in this embodiment, please refer to the specific implementation methods of the stage-by-stage temperature control method for high-purity gas mentioned above. To avoid redundancy, they will not be repeated here.

[0073] Example 4

[0074] A computer program product involved in Example 4 of the present application is used to store a computer program. When the computer program runs on a computer, the method in any one of the implementation modes in Example 1 of the present application is implemented.

[0075] Example 5

[0076] A computer-readable storage medium involved in Embodiment 5 of the present application, the computer-readable storage medium stores a program code for execution by a device, the program code including steps for executing the method in any one of the implementations in Embodiment 1 of the present application;

[0077] Among them, the computer-readable storage medium can be a read-only memory (ROM), a static storage device, a dynamic storage device or a random access memory (RAM); the computer-readable storage medium can store program code, and when the program stored in the computer-readable storage medium is executed by the processor, the processor is used to execute the steps of the method in any one of the implementation methods in Example 1 of the present application.

[0078] Example 6

[0079] like Figure 4 As shown, an electronic device involved in Embodiment 6 of the present application includes a processor, a memory, and a program or instruction stored in the memory and executable on the processor, and when the program or instruction is executed by the processor, a method in any one of the implementations in Embodiment 1 of the present application is implemented;

[0080] Among them, the processor can adopt a general-purpose central processing unit (CPU), a microprocessor, an application specific integrated circuit (ASIC), a graphics processing unit (GPU) or one or more integrated circuits to execute relevant programs to implement the method in any one of the implementation methods in Example 1 of the present application.

[0081] The processor may also be an integrated circuit electronic device with signal processing capability. In the implementation process, each step of the method in any implementation of Embodiment 1 of the present application may be completed by an integrated logic circuit of hardware in the processor or by instructions in software form.

[0082] The above-mentioned processor may also be a general-purpose processor, a digital signal processor, an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application may be implemented or executed. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The steps of the method disclosed in the embodiments of the present application may be directly embodied as being executed by a hardware decoding processor, or may be executed by a combination of hardware and software modules in a decoding processor. The software module may be located in a mature storage medium in the art such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information in the memory, and completes the functions required to be performed by the unit included in the data processing device of the embodiment of the present application in combination with its hardware, or executes the method in any one of the implementation modes in the embodiment 1 of the present application.

[0083] The above are only preferred specific implementations of the present application; however, the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and its improved ideas of the present application within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.

Claims

1. A staged temperature control method for high purity gas, characterized in that: include: Acquiring the actual temperature of the gas to be processed and the first target temperature; calculating a difference between the actual temperature and the first target temperature; Determining the temperature control mode according to the difference, and determining the number of temperature control stages and stage temperature values ​​according to the difference; The output power of the corresponding temperature control device is adjusted according to the number of stages and the stage temperature value to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches the first target temperature.

2. The staged temperature control method of high-purity gas according to claim 1, characterized in that: The temperature control methods include heating and cooling.

3. The staged temperature control method of high purity gas according to claim 2, characterized in that: The user determines the number of temperature control stages and the stage temperature values ​​according to the difference. If the difference between the first target temperature and the actual temperature of the gas to be treated is a positive number, the temperature control method is heating, and the corresponding temperature control device is a heating device; if the difference between the first target temperature and the actual temperature of the gas to be treated is a negative number, the temperature control method is cooling, and the corresponding temperature control device is a cooling device.

4. The staged temperature control method of high purity gas according to claim 1, characterized in that: In the staged temperature control process for the gas to be processed, the real-time temperature of the gas to be processed is obtained, and the output power of the corresponding temperature control device is dynamically adjusted according to the change of the real-time temperature.

5. The staged temperature control method of high purity gas according to claim 1, characterized in that: According to the number of stages and the stage temperature value, the output power of the corresponding temperature control device is adjusted to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches a first target temperature, specifically including: S401, adding the actual temperature of the gas to be treated to the stage temperature value as the second target temperature; S402, determining whether the second target temperature is greater than the first target temperature; If the judgment result is no, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be processed and the stage temperature value, so as to heat the gas to be processed to the second target temperature and repeat step S401; If the judgment result is yes, the output power of the corresponding temperature control device is adjusted according to the actual temperature of the gas to be treated and the difference between the first target temperature and the actual temperature of the gas to be treated, so as to heat the gas to be treated to the first target temperature.

6. A staged temperature control device for high purity gas, characterized in that: include: An acquisition module, used for acquiring the actual temperature of the gas to be processed and the first target temperature; A calculation module, used for calculating the difference between the actual temperature and the first target temperature; A judging module, used for judging the temperature control mode according to the difference, and determining the number of temperature control stages and stage temperature values ​​according to the difference; The temperature control module is used to adjust the output power of the corresponding temperature control device according to the number of stages and the stage temperature value to control the temperature of the gas to be treated in stages until the temperature of the gas to be treated reaches a first target temperature.

7. A staged temperature control system for high purity gas, characterized in that: include: A control module, configured to implement the method as claimed in any one of claims 1 to 5; A temperature detection module, used to detect the temperature of the gas to be processed; Temperature control equipment, including heating equipment and cooling equipment; Heating equipment, used for heating the gas to be treated; Refrigeration equipment is used to cool the gas to be processed.

8. A computer program product, characterized in that The computer program product stores computer instructions, and when the computer instructions are executed by a processor, the method according to any one of claims 1 to 5 is implemented.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a program code for execution by a device, wherein the program code includes steps for executing the method according to any one of claims 1 to 5.

10. An electronic device, characterized in that: The electronic device comprises a processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein the program or instruction, when executed by the processor, implements the method as claimed in any one of claims 1 to 5.

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